Display device

Abstract

The present invention provides a display device having an imaging function. The present invention provides a display device, or an imaging device, having a high aperture ratio. The display device has a light-emitting element, a light-receiving element, a first resin layer, and a light-shielding layer. In the light-emitting element, a first pixel electrode, a first organic layer, and a common electrode are stacked in this order. In the light-receiving element, a second pixel electrode, a second organic layer, and a common electrode are stacked in this order. The first organic layer includes a first light-emitting layer, and the second organic layer includes a photoelectric conversion layer. The light-shielding layer has a portion located between the light-emitting element and the light-receiving element in plan view. The first resin layer is provided so as to cover the light-emitting element and the light-receiving element. Furthermore, the first resin layer has a portion located between the light-emitting element and the light-shielding layer and between the light-receiving element and the light-shielding layer. In an area overlapping the light-shielding layer, the first resin layer also has a portion with a thickness smaller than the layout spacing between the light-emitting element and the light-receiving element.

Description

display device

[0001] FIELD OF THE INVENTION One aspect of the present invention relates to a display device, an imaging device, and a display device having an imaging function.

[0002] Note that one embodiment of the present invention is not limited to the above technical field. Examples of the technical field of one embodiment of the present invention disclosed in this specification and the like include semiconductor devices, display devices, light-emitting devices, power storage devices, memory devices, electronic devices, lighting devices, input devices, input / output devices, driving methods thereof, and manufacturing methods thereof. A semiconductor device refers to any device that can function by utilizing semiconductor characteristics.

[0003] In recent years, display devices have been required to have higher definition in order to display high-resolution images. Furthermore, in information terminal devices such as smartphones, tablet terminals, and notebook PCs (personal computers), display devices are required to have not only high definition but also low power consumption. Furthermore, display devices that not only display images but also have various additional functions, such as a touch panel function or a function for capturing fingerprints for authentication, are in demand.

[0004] As a display device, for example, a light-emitting device having a light-emitting element has been developed. Light-emitting elements (also referred to as EL elements) utilizing the electroluminescence (EL) phenomenon have features such as being easily thin and lightweight, being capable of responding quickly to input signals, and being capable of being driven using a DC constant voltage power supply, and are therefore applied to display devices. For example, Patent Document 1 discloses a flexible light-emitting device using an organic EL element.

[0005] JP 2014-197522 A

[0006] An object of one embodiment of the present invention is to provide a display device having an imaging function. Another object is to provide a high-resolution imaging device or display device. Another object is to provide a display device or imaging device with a high aperture ratio. Another object is to provide an imaging device or display device that can perform imaging with high sensitivity. Another object is to provide a display device that can acquire biometric information such as a fingerprint. Another object is to provide a display device that functions as a touch panel.

[0007] An object of one embodiment of the present invention is to provide a highly reliable display device, imaging device, or electronic device.An object of one embodiment of the present invention is to provide a display device, imaging device, electronic device, or the like having a novel structure.An object of one embodiment of the present invention is to alleviate at least one of the problems of the prior art.

[0008] Note that the description of these problems does not preclude the existence of other problems. Note that one embodiment of the present invention does not necessarily solve all of these problems. Note that problems other than these can be extracted from the description of the specification, drawings, claims, etc.

[0009] One embodiment of the present invention is a display device including a light-emitting element, a light-receiving element, a first resin layer, and a light-shielding layer. The light-emitting element includes a first pixel electrode, a first organic layer, and a common electrode stacked in this order. The light-receiving element includes a second pixel electrode, a second organic layer, and a common electrode stacked in this order. The first organic layer includes a first light-emitting layer, and the second organic layer includes a photoelectric conversion layer. The light-shielding layer has a portion located between the light-emitting element and the light-receiving element in a planar view. The first resin layer is provided to cover the light-emitting element and the light-receiving element. The first resin layer has portions located between the light-emitting element and the light-shielding layer and between the light-receiving element and the light-shielding layer. Furthermore, the first resin layer has portions whose thickness is smaller than the arrangement interval between the light-emitting element and the light-receiving element in a region overlapping with the light-shielding layer.

[0010] In the above, it is preferable to have a first spacer. The first spacer has a portion overlapping the light-emitting element and a portion located between the light-emitting element and the light-receiving element in a planar view. It is also preferable that the first spacer has an opening overlapping the light-receiving element. It is also preferable that the light-shielding layer is located between the first resin layer and the first spacer. It is also preferable that the light-shielding layer has a portion covering the inner wall of the opening of the first spacer. In this case, it is preferable that the first resin layer has a portion in the region overlapping with the first spacer and the light-shielding layer that is smaller than the arrangement interval between the light-emitting element and the light-receiving element.

[0011] Another embodiment of the present invention is a display device including a light-emitting element, a light-receiving element, a first resin layer, a light-shielding layer, and a second spacer. The light-emitting element includes a first pixel electrode, a first organic layer, and a common electrode stacked in this order. The light-receiving element includes a second pixel electrode, a second organic layer, and a common electrode stacked in this order. The first organic layer includes a first light-emitting layer, and the second organic layer includes a photoelectric conversion layer. The second spacer has a portion overlapping with the light-receiving element and a portion located between the light-emitting element and the light-receiving element in a planar view. The second spacer does not overlap with the light-emitting element. The light-shielding layer is provided to cover an upper surface and a side surface at a side end of the second spacer. The first resin layer is provided to cover the light-emitting element, the light-receiving element, the second spacer, and the light-shielding layer.

[0012] Another embodiment of the present invention is a display device including a light-emitting element, a light-receiving element, a first resin layer, a light-shielding layer, and a protective layer. The light-emitting element includes a first pixel electrode, a first organic layer, and a common electrode stacked in this order. The light-receiving element includes a second pixel electrode, a second organic layer, and a common electrode stacked in this order. The first organic layer includes a first light-emitting layer, and the second organic layer includes a photoelectric conversion layer. The protective layer is provided to cover the light-emitting element and the light-receiving element. The protective layer has portions located between the first resin layer and the light-emitting element and between the first resin layer and the light-receiving element. The light-shielding layer has portions located between the light-emitting element and the light-receiving element in a planar view. The light-shielding layer has a portion in contact with the protective layer. The first resin layer is divided at the light-shielding layer.

[0013] In any of the above, it is preferable that the pixel further includes a second resin layer located in a region between the light-emitting element and the light-receiving element, and in this case, it is preferable that the second resin layer does not overlap with the first organic layer, the second organic layer, the first pixel electrode, or the second pixel electrode, and has a portion overlapping with the common electrode.

[0014] In the above, the second resin layer is preferably divided into a first portion located on the light-emitting element side and a second portion located on the light-receiving element side, and the common electrode is preferably provided so as to cover the first portion and the second portion and to fill a gap between the first portion and the second portion.

[0015] In any of the above, it is preferable that a first insulating layer is provided between the light-emitting element and the light-receiving element, and the first insulating layer is preferably in contact with an end of the first organic layer and an end of the second organic layer.

[0016] In any of the above, it is preferable that a first layer and a second layer are provided between the light-emitting element and the light-receiving element. The first layer overlaps the second organic layer and contains the same material as the first organic layer. The second layer overlaps the first organic layer and contains the same material as the second organic layer. It is also preferable that an end of the first organic layer and an end of the first layer are provided opposite each other in the region between the light-emitting element and the light-receiving element. It is also preferable that an end of the second organic layer and an end of the second layer are provided opposite each other in the region between the light-emitting element and the light-receiving element.

[0017] According to one embodiment of the present invention, a display device having an imaging function can be provided. Alternatively, a high-resolution imaging device or display device can be provided. Alternatively, a display device or imaging device with a high aperture ratio can be provided. Alternatively, an imaging device or display device capable of performing imaging with high sensitivity can be provided. Alternatively, a display device capable of acquiring biometric information such as a fingerprint can be provided. Alternatively, a display device functioning as a touch panel can be provided.

[0018] According to one embodiment of the present invention, it is possible to provide a highly reliable display device, an imaging device, or an electronic device. Alternatively, it is possible to provide a display device, an imaging device, an electronic device, or the like having a novel configuration. Alternatively, it is possible to alleviate at least one of the problems of the prior art.

[0019] Note that the description of these effects does not preclude the existence of other effects. Note that one embodiment of the present invention does not necessarily have all of these effects. Note that effects other than these can be extracted from the description in the specification, drawings, claims, etc.

[0020] FIGS. 1A to 1D are diagrams showing a structural example of a display device. FIGS. 2A and 2B are diagrams showing a structural example of a display device. FIGS. 3A and 3B are diagrams showing a structural example of a display device. FIGS. 4A and 4B are diagrams showing a structural example of a display device. FIGS. 5A and 5B are diagrams showing a structural example of a display device. FIGS. 6A and 6B are diagrams showing a structural example of a display device. FIG. 7 is a diagram showing a structural example of a display device. FIGS. 8A and 8B are diagrams showing a structural example of a display device. FIG. 9 is a diagram showing a structural example of a display device. FIGS. 10A and 10B are diagrams showing a structural example of a display device. FIGS. 11A and 11B are diagrams showing a structural example of a display device. FIGS. 12A and 12B are diagrams showing a structural example of a display device. FIGS. 13A and 13B are diagrams showing a structural example of a display device. FIGS. 14A and 14B are diagrams showing a structural example of a display device. FIGS. 15A to 15C are diagrams showing an example of a method for manufacturing a display device. FIGS. 16A to 16C are diagrams showing an example of a method for manufacturing a display device. FIGS. 17A to 17C are diagrams showing an example of a method for manufacturing a display device. FIGS. 18A to 18C are diagrams showing an example of a method for manufacturing a display device. FIGS. 19A to 19C are diagrams showing an example of a method for manufacturing a display device. FIG. 20 is a diagram showing a structural example of a display device. FIG. 21A is a diagram showing a structural example of a display device. FIG. 21B is a diagram showing a structural example of a transistor. FIGS. 22A, 22B, and 22D are cross-sectional views showing examples of display devices. FIGS. 22C and 22E are diagrams showing examples of images. FIGS. 22F to 22H are top views showing examples of pixels. FIG. 23A is a cross-sectional view showing an example of a structure of a display device. FIGS. 23B to 23D are top views showing examples of pixels. FIG. 24A is a cross-sectional view showing an example of a structure of a display device. FIGS. 24B to 24I are top views showing an example of a pixel. FIGS. 25A and 25B are diagrams showing a structural example of a display device. FIGS. 26A to 26G are diagrams showing a structural example of a display device. 27A to 27F are diagrams showing examples of pixels. FIGS. 27G and 27H are diagrams showing examples of circuit diagrams of pixels. FIGS. 28A to 28J are diagrams showing examples of the configuration of a display device. FIGS. 29A and 29B are diagrams showing examples of electronic devices. FIGS. 30A to 30D are diagrams showing examples of electronic devices.31A to 31F are diagrams illustrating an example of an electronic device, and FIGS. 32A to 32F are diagrams illustrating an example of an electronic device.

[0021] Hereinafter, embodiments will be described with reference to the drawings. However, it will be readily understood by those skilled in the art that the embodiments can be implemented in many different ways and that various changes in form and details can be made without departing from the spirit and scope of the present invention. Therefore, the present invention should not be interpreted as being limited to the following description of the embodiments.

[0022] In the configuration of the invention described below, the same parts or parts having similar functions are denoted by the same reference numerals in different drawings, and repeated explanations thereof will be omitted. In addition, when referring to similar functions, the same hatch pattern may be used and no particular reference numeral may be assigned.

[0023] In the drawings described in this specification, the size of each component, the thickness of a layer, or an area may be exaggerated for clarity, and therefore, the drawings are not necessarily limited to the scale.

[0024] In this specification, ordinal numbers such as "first" and "second" are used to avoid confusion of components and do not limit the number.

[0025] In the following description, expressions indicating directions such as "up" and "down" are basically used in accordance with the directions in the drawings. However, for ease of explanation, the directions indicated by "up" or "down" in the specification may not match those in the drawings. For example, when explaining the stacking order (or formation order) of a laminate, etc., even if the surface on which the laminate is provided in the drawing (such as the surface to be formed, the supporting surface, the adhesive surface, or the flat surface) is located above the laminate, the direction toward the surface may be expressed as "down" and the opposite direction as "up."

[0026] Furthermore, in this specification and the like, the terms "film" and "layer" are interchangeable. For example, the terms "conductive layer" and "insulating layer" may be interchangeable with the terms "conductive film" and "insulating film."

[0027] In this specification, the EL layer refers to a layer provided between a pair of electrodes of a light-emitting element and containing at least a light-emitting substance (also referred to as a light-emitting layer), or a stack including a light-emitting layer.

[0028] In this specification and the like, a display panel, which is one aspect of a display device, has a function of displaying (outputting) an image or the like on a display surface, and therefore the display panel is one aspect of an output device.

[0029] In addition, in this specification, a display panel having a connector such as an FPC (Flexible Printed Circuit) or a TCP (Tape Carrier Package) attached to the substrate, or a display panel having an IC mounted on the substrate using a COG (Chip On Glass) method or the like, may be referred to as a display panel module, a display module, or simply a display panel.

[0030] Embodiment 1 In this embodiment, a structural example of a display device according to one embodiment of the present invention and an example of a manufacturing method of the display device will be described.

[0031] One embodiment of the present invention is a display device including a light-emitting element (also referred to as a light-emitting device) and a light-receiving element (also referred to as a light-receiving device). The light-emitting element has a pair of electrodes and an EL layer therebetween. The light-receiving element has a pair of electrodes and an active layer therebetween. The light-emitting element is preferably an organic EL element (organic electroluminescent element). The light-receiving element is preferably an organic photodiode (organic photoelectric conversion element).

[0032] Furthermore, the display device preferably has two or more light-emitting elements that emit different light colors. The light-emitting elements that emit different light colors have EL layers containing different materials. For example, a full-color display device can be realized by having three types of light-emitting elements that emit red (R), green (G), or blue (B) light, respectively.

[0033] One embodiment of the present invention functions as an imaging device because it can capture an image using a plurality of light-receiving elements. In this case, the light-emitting elements can be used as a light source for capturing an image. Another embodiment of the present invention functions as a display device because it can display an image using a plurality of light-emitting elements. Therefore, one embodiment of the present invention can be said to be a display device having an imaging function or an imaging device having a display function.

[0034] For example, in a display device according to one embodiment of the present invention, light-emitting elements are arranged in a matrix in the display portion, and light-receiving elements are also arranged in a matrix in the display portion. Therefore, the display portion has a function of displaying an image and a function as a light-receiving portion. Since images can be captured by the light-receiving elements provided in the display portion, the display device can function as an image sensor, a touch panel, or the like. That is, the display portion can capture an image or detect the approach or contact of an object. Furthermore, since the light-emitting elements provided in the display portion can be used as a light source for receiving light, there is no need to provide a light source separately from the display device, and a highly functional display device can be realized without increasing the number of electronic components.

[0035] In one embodiment of the present invention, when light emitted from a light-emitting element included in a display portion is reflected by an object, a light-receiving element can detect the reflected light; therefore, imaging or touch (including non-contact) detection can be performed even in a dark environment.

[0036] Furthermore, the display device of one embodiment of the present invention can capture an image of a fingerprint or palm print when a finger, palm, or the like is placed in contact with the display unit. Therefore, an electronic device including the display device of one embodiment of the present invention can perform personal authentication using an image of the captured fingerprint, palm print, or the like. This eliminates the need for a separate imaging device for fingerprint authentication or palm print authentication, thereby reducing the number of components in the electronic device. Furthermore, since the light receiving elements are arranged in a matrix on the display unit, an image of a fingerprint, palm print, or the like can be captured anywhere on the display unit, thereby realizing an electronic device with excellent convenience.

[0037] Here, when partially or entirely forming separate EL layers for light-emitting elements with different emission colors, it is known to form them by vapor deposition using a shadow mask such as a fine metal mask (FMM). However, with this method, deviations in the shape and position of the island-shaped organic film from the design occur due to various factors, such as the accuracy of the FMM, misalignment between the FMM and the substrate, deflection of the FMM, and the spread of the contours of the deposited film due to vapor scattering, making it difficult to achieve high resolution and a high aperture ratio for display devices. For this reason, measures have been taken to artificially increase the resolution (also known as pixel density) by applying special pixel arrangement methods such as a pentile arrangement.

[0038] In a fabrication method using FMM, two adjacent island-shaped organic films can be formed so that they partially overlap in order to achieve even the slightest increase in resolution and aperture ratio. This allows for a significant reduction in the distance between the light-emitting regions compared to when the two island-shaped organic films are not overlapped. However, when two adjacent island-shaped organic films are formed so that they overlap, current leakage between the two adjacent light-emitting elements through the overlapping organic films can occur, resulting in unintended light emission. This can result in reduced brightness and contrast, thereby degrading display quality. Furthermore, the leakage current can worsen power efficiency and power consumption.

[0039] Furthermore, if a similar leakage current occurs between the light-emitting element and the light-receiving element, the leakage current may become a cause of noise when imaging using the light-receiving element, which may result in a decrease in imaging sensitivity (signal-to-noise ratio (S / N ratio)).

[0040] Therefore, in one embodiment of the present invention, FMM is used to separately fabricate organic films between adjacent light-emitting elements and light-receiving elements, or between two adjacent light-emitting elements, so that their respective organic films partially overlap. Specifically, a layer containing a light-emitting compound (also referred to as a light-emitting layer) of a light-emitting element and a layer containing a photoelectric conversion material (also referred to as an active layer or photoelectric conversion layer) of a light-receiving element are separately fabricated using FMM. In this case, organic films that can be used in common between the light-emitting elements and the light-receiving elements may be used instead of separately fabricating them. An organic stacked film, in which a light-emitting layer, an active layer, and other organic films are stacked, is located between adjacent light-emitting elements and light-receiving elements. Subsequently, the organic stacked film is divided by partially etching the organic stacked film using photolithography. This allows current leakage paths between the light-emitting elements and the light-receiving elements to be divided. Therefore, noise can be reduced when imaging using a light-receiving element, enabling high-sensitivity imaging.

[0041] In this way, leakage current (also called side leakage current) between the light-emitting element and the light-receiving element is suppressed, enabling high-precision imaging with a high S / N ratio. Therefore, clear imaging can be achieved even with weak light. Therefore, the brightness of the light-emitting element used as a light source can be reduced during imaging, thereby reducing power consumption.

[0042] Furthermore, a current leakage path between two adjacent light-emitting elements can be separated, which makes it possible to increase brightness, contrast, power efficiency, or reduce power consumption.

[0043] Furthermore, it is preferable to form an insulating layer to protect the side surfaces of the organic laminated film exposed by etching, thereby improving the reliability of the display device.

[0044] The organic film formed using FMM may be formed so as to overlap not only the pixel electrode of the target element but also the pixel electrode of an adjacent element. This allows for a more dense arrangement of pixel electrodes. In this case, a portion of the organic film of an adjacent element that is separated from the pixel electrode of one element overlaps the pixel electrode of the other element.

[0045] Furthermore, it is preferable to provide an electrode electrically connected to the common electrode between two adjacent light-emitting elements or between a light-emitting element and a light-receiving element. The electrode can be used as an auxiliary electrode or auxiliary wiring to enhance the conductivity of the common electrode. Alternatively, the electrode can be used as an electrode to connect the common electrode and the auxiliary wiring. This makes it possible to suppress the influence of voltage drop caused by the electrical resistance of the common electrode, even in large display devices.

[0046] Below, a structural example of a display device according to one embodiment of the present invention and an example of a manufacturing method thereof will be described with reference to the drawings.

[0047] [Configuration Example 1] Fig. 1A shows a schematic top view of a display device 100. The display device 100 has a plurality of light-emitting elements 110R that exhibit red light, a plurality of light-emitting elements 110G that exhibit green light, a plurality of light-emitting elements 110B that exhibit blue light, and a plurality of light-receiving elements 110S. In Fig. 1A, in order to easily distinguish between the light-emitting elements, the symbols R, G, B, and S are assigned within the light-emitting regions of each light-emitting element or light-receiving element.

[0048] The light-emitting elements 110R, 110G, 110B, and the light-receiving elements 110S are arranged in a matrix. Fig. 1A shows a configuration in which two elements are alternately arranged in one direction. The arrangement of the light-emitting elements is not limited to this, and other arrangements such as a stripe arrangement, an S-stripe arrangement, a delta arrangement, a Bayer arrangement, or a zigzag arrangement may also be used. Alternatively, a pentile arrangement or a diamond arrangement may also be used.

[0049] As the light-emitting element 110R, the light-emitting element 110G, and the light-emitting element 110B, it is preferable to use an EL element such as an OLED (organic light-emitting diode) or a QLED (quantum-dot light-emitting diode). Examples of the light-emitting substance contained in the EL element include a substance that emits fluorescence (fluorescent material), a substance that emits phosphorescence (phosphorescent material), and a substance that exhibits thermally activated delayed fluorescence (thermally activated delayed fluorescence (TADF) material). As the light-emitting substance contained in the EL element, not only organic compounds but also inorganic compounds (such as quantum dot materials) can be used.

[0050] The light receiving element 110S can be, for example, a pn-type or pin-type photodiode. The light receiving element 110S functions as a photoelectric conversion element that detects light incident on the light receiving element 110S and generates an electric charge. The amount of electric charge generated by the photoelectric conversion element is determined according to the amount of incident light. In particular, it is preferable to use an organic photodiode having a layer containing an organic compound as the light receiving element 110S. Organic photodiodes can be easily made thin, lightweight, and large in area, and have a high degree of freedom in shape and design, making them applicable to a variety of devices.

[0051] 1A also shows a connection electrode 111C that is electrically connected to the common electrode 113. The connection electrode 111C is given a potential (e.g., an anode potential or a cathode potential) to be supplied to the common electrode 113. The connection electrode 111C is provided outside the display area where the light-emitting elements 110R and the like are arranged. Also in FIG. 1A, the common electrode 113 is shown by a dashed line.

[0052] The connection electrode 111C can be provided along the periphery of the display area. For example, it may be provided along one side of the periphery of the display area, or it may be provided over two or more sides of the periphery of the display area. That is, when the top surface of the display area has a rectangular shape, the top surface of the connection electrode 111C can have a strip shape, an L-shape, a U-shape (square bracket shape), a square shape, or the like.

[0053] 1A also shows a connection portion 140. The connection portion 140 is a connection portion between the common electrode 113 and the electrode 111A. The electrode 111A may itself function as an auxiliary wiring, or may function as an electrode or wiring for connecting the auxiliary wiring and the common electrode 113. There is no restriction on the method of arranging the connection portion 140, and the connection portion 140 may be arranged periodically or non-periodically (randomly).

[0054] 1B, 1C, and 1D are cross-sectional schematic diagrams corresponding to dashed dotted lines A1-A2, B1-B2, and C1-C2 in Fig. 1A, respectively. Fig. 1B shows a cross-sectional schematic diagram of light-emitting element 110G, light-emitting element 110R, and light-receiving element 110S, Fig. 1C shows a cross-sectional schematic diagram of connection portion 140, and Fig. 1D shows a cross-sectional schematic diagram of connection electrode 111C.

[0055] FIG. 1B shows cross sections of the light-emitting element 110R, the light-emitting element 110G, and the light-receiving element 110S. The light-emitting element 110R has a pixel electrode 111R, an organic layer 115, an organic layer 112R, an organic layer 116, an organic layer 114, and a common electrode 113. The light-emitting element 110G has a pixel electrode 111G, an organic layer 115, an organic layer 112G, an organic layer 116, an organic layer 114, and a common electrode 113. The light-receiving element 110S has a pixel electrode 111S, an organic layer 115, an organic layer 115, an organic layer 116, an organic layer 114, and a common electrode 113. The organic layer 114 and the common electrode 113 are provided in common to the light-emitting element 110R, the light-emitting element 110G, the light-receiving element 110S, and the light-emitting element 110B (not shown). The organic layer 114 can also be referred to as a common layer.

[0056] The organic layer 112R of the light-emitting element 110R contains a light-emitting organic compound that emits at least red light. The organic layer 112G of the light-emitting element 110G contains a light-emitting organic compound that emits at least green light. The organic layer 112B (not shown) of the light-emitting element 110B contains a light-emitting organic compound that emits at least blue light. The organic layer 112R, the organic layer 112G, and the organic layer 112B can each be referred to as a light-emitting layer.

[0057] The organic layer 155 of the light receiving element 110S contains a photoelectric conversion material that is sensitive to the wavelength range of visible light or infrared light. The wavelength range to which the photoelectric conversion material of the organic layer 155 is sensitive preferably includes one or more of the wavelength range of light emitted by the light emitting element 110R, the wavelength range of light emitted by the light emitting element 110G, and the wavelength range of light emitted by the light emitting element 110B. Alternatively, a photoelectric conversion material that is sensitive to infrared light with a longer wavelength than the wavelength range of light emitted by the light emitting element 110R may be used. The organic layer 155 may also be referred to as an active layer or a photoelectric conversion layer.

[0058] Hereinafter, when describing matters common to light emitting element 110R, light emitting element 110G, and light emitting element 110B, they may be referred to as light emitting element 110. Similarly, when describing matters common to components distinguished by alphabets, such as organic layer 112R, organic layer 112G, and organic layer 112B, they may be described using symbols without the alphabets.

[0059] In each light-emitting element, the laminated film located between the pixel electrode and the common electrode 113 can be called an EL layer. In the light-receiving element 110S, the laminated film located between the pixel electrode 111S and the common electrode 113 can be called a PD layer.

[0060] In each light-emitting element or light-receiving element 110S, organic layer 115 is a layer located between organic layer 112 or organic layer 155 and pixel electrode 111. Organic layer 116 is a layer located between organic layer 112 or organic layer 155 and organic layer 114. Organic layer 114 is a layer located between organic layer 116 and common electrode 113.

[0061] The organic layer 115, the organic layer 116, and the organic layer 114 can each independently include one or more of an electron injection layer, an electron transport layer, a hole injection layer, and a hole transport layer. For example, the organic layer 115 can have a stacked structure of a hole injection layer and a hole transport layer from the pixel electrode 111 side, the organic layer 116 can have an electron transport layer, and the organic layer 114 can have an electron injection layer. Alternatively, the organic layer 115 can have a stacked structure of an electron injection layer and an electron transport layer from the pixel electrode 111 side, the organic layer 116 can have a hole transport layer, and the organic layer 114 can have a hole injection layer.

[0062] It should be noted that the term "organic layer" used for layers located between a pair of electrodes of the light-emitting element or light-receiving element 110S, such as organic layer 112, organic layer 114, organic layer 115, organic layer 116, and organic layer 155, is intended to refer to layers that constitute an organic EL element or an organic photoelectric conversion element, and does not necessarily need to contain an organic compound. For example, the organic layer 112, organic layer 114, organic layer 115, and organic layer 116 may each be a film that does not contain an organic compound and contains only an inorganic compound or an inorganic substance.

[0063] The pixel electrodes 111R, 111G, and 111B (not shown) are provided for each light-emitting element. The common electrode 113 and organic layer 114 are provided as a continuous layer common to each light-emitting element and light-receiving element 110S. A conductive film transmissive to visible light is used for either the pixel electrode or the common electrode 113, while a conductive film reflective to visible light is used for the other. By making each pixel electrode transmissive and the common electrode 113 reflective, a bottom-emission display device can be achieved. Conversely, by making each pixel electrode reflective and the common electrode 113 transmissive, a top-emission display device can be achieved. Incidentally, by making both the pixel electrodes and the common electrode 113 transmissive, a dual-emission display device can be achieved.

[0064] A protective layer 121 is provided on the common electrode 113 to cover the light emitting element 110R, the light emitting element 110G, the light receiving element 110S, and the light emitting element 110B (not shown). The protective layer 121 has a function of preventing impurities such as water from diffusing from above into each light emitting element.

[0065] Slits 120 are provided between adjacent light-emitting elements and light-receiving elements 110S and between two adjacent light-emitting elements. The slits 120 correspond to portions obtained by etching organic layer 112 or organic layer 155, organic layer 115, and organic layer 116 located between adjacent light-emitting elements and light-receiving elements 110S or between two adjacent light-emitting elements.

[0066] An insulating layer 125 and a resin layer 126 are provided in the slit 120. The insulating layer 125 is provided along the sidewalls and bottom surface of the slit 120. The resin layer 126 is provided on the insulating layer 125 and has the function of filling the recesses located in the slit 120 and flattening the upper surface. By flattening the recesses of the slit 120 with the resin layer 126, it is possible to improve the coverage of the organic layer 114, the common electrode 113, and the protective layer 121.

[0067] Furthermore, the slits 120 can be formed simultaneously with the formation of openings for external connection terminals such as the connection electrode 111C, and therefore these can be formed without increasing the number of processes. Furthermore, the slits 120 have the insulating layer 125 and the resin layer 126, which are effective in preventing short circuits between the pixel electrode 111 and the common electrode 113. The resin layer 126 also has the effect of improving the adhesion of the organic layer 114. In other words, the provision of the resin layer 126 improves the adhesion of the organic layer 114, thereby making it possible to suppress peeling of the organic layer 114.

[0068] Since the insulating layer 125 is provided in contact with the side surface of an organic layer (e.g., organic layer 115), a structure can be achieved in which the organic layer does not come into contact with the resin layer 126. If the organic layer comes into contact with the resin layer 126, the organic layer may be dissolved by an organic solvent contained in the resin layer 126. Therefore, as shown in this embodiment, by providing the insulating layer 125 between the organic layer and the resin layer 126, it is possible to protect the side surface of the organic layer. Note that the slit 120 may be configured to separate at least one or more of the hole injection layer, hole transport layer, electron blocking layer, light-emitting layer, active layer, hole blocking layer, electron transport layer, and electron injection layer.

[0069] The insulating layer 125 can be an insulating layer containing an inorganic material. For example, an inorganic insulating film such as an oxide insulating film, a nitride insulating film, an oxynitride insulating film, or a nitride oxide insulating film can be used for the insulating layer 125. The insulating layer 125 may have a single-layer structure or a stacked-layer structure. Examples of oxide insulating films include a silicon oxide film, an aluminum oxide film, a magnesium oxide film, an indium gallium zinc oxide film, a gallium oxide film, a germanium oxide film, an yttrium oxide film, a zirconium oxide film, a lanthanum oxide film, a neodymium oxide film, a hafnium oxide film, and a tantalum oxide film. Examples of nitride insulating films include a silicon nitride film and an aluminum nitride film. Examples of oxynitride insulating films include a silicon oxynitride film and an aluminum oxynitride film. Examples of nitride oxide insulating films include a silicon nitride oxide film and an aluminum nitride oxide film. In particular, by using an inorganic insulating film such as a metal oxide film, an aluminum oxide film, or a silicon oxide film formed by an ALD method as the insulating layer 125, an insulating layer 125 with few pinholes and excellent protection of the EL layer can be formed.

[0070] In this specification and elsewhere, an oxynitride refers to a material whose composition contains more oxygen than nitrogen, and a nitride oxide refers to a material whose composition contains more nitrogen than oxygen. For example, silicon oxynitride refers to a material whose composition contains more oxygen than nitrogen, and silicon nitride oxide refers to a material whose composition contains more nitrogen than oxygen.

[0071] The insulating layer 125 can be formed by a sputtering method, a CVD method, a PLD method, an ALD method, or the like. The insulating layer 125 is preferably formed by an ALD method because it has good coverage.

[0072] An insulating layer containing an organic material can be suitably used as the resin layer 126. For example, acrylic resin, polyimide resin, epoxy resin, imide resin, polyamide resin, polyimideamide resin, silicone resin, siloxane resin, benzocyclobutene resin, phenolic resin, precursors of these resins, etc. can be used as the resin layer 126. Alternatively, organic materials such as polyvinyl alcohol (PVA), polyvinyl butyral, polyvinylpyrrolidone, polyethylene glycol, polyglycerin, pullulan, water-soluble cellulose, or alcohol-soluble polyamide resin can be used as the resin layer 126.

[0073] Furthermore, a photosensitive resin can be used as the resin layer 126. A photoresist can be used as the photosensitive resin. The photosensitive resin can be a positive-type material or a negative-type material.

[0074] Furthermore, by using a colored material (e.g., a material containing a black pigment) for the resin layer 126, it is possible to provide the function of blocking stray light from adjacent pixels and suppressing color mixing. Furthermore, a resin material (color filter material) that can be used for a color filter can also be used as the colored material. In particular, using a resin material that is a mixture of two or three or more color filter materials is preferable because it can enhance the visible light blocking effect. In particular, by mixing three or more color filter materials, it is possible to obtain a resin layer that is black or nearly black.

[0075] In addition, a reflective film (for example, a metal film containing one or more selected from silver, palladium, copper, titanium, aluminum, etc.) may be provided between the insulating layer 125 and the resin layer 126, and the light emitted from the light-emitting layer may be reflected by the reflective film, thereby providing the function of improving the light extraction efficiency.

[0076] The upper surface of the resin layer 126 is preferably as flat as possible, but the surface may have a gently curved shape. While Fig. 1B and other figures show an example in which the upper surface of the resin layer 126 has a wavy shape with concave and convex portions, this is not limiting. For example, the upper surface of the resin layer 126 may be a convex surface, a concave surface, or a flat surface.

[0077] The protective layer 121 may also be a laminated film of an inorganic insulating film and an organic insulating film. For example, a configuration in which an organic insulating film is sandwiched between a pair of inorganic insulating films is preferable. Furthermore, it is preferable that the organic insulating film functions as a planarizing film. This allows the upper surface of the organic insulating film to be flat, improving the coverage of the inorganic insulating film thereon and enhancing the barrier properties. Furthermore, since the upper surface of the protective layer 121 is flat, when a structure (e.g., a color filter, a touch sensor electrode, a lens array, etc.) is provided above the protective layer 121, the influence of uneven shapes caused by the structure below can be reduced, which is preferable.

[0078] The protective layer 121 may have, for example, a single-layer structure or a multilayer structure including at least an inorganic insulating film. Examples of the inorganic insulating film include oxide films or nitride films such as a silicon oxide film, a silicon oxynitride film, a silicon nitride oxide film, a silicon nitride film, an aluminum oxide film, an aluminum oxynitride film, and a hafnium oxide film. Alternatively, the protective layer 121 may be made of a semiconductor material such as indium gallium oxide or indium gallium zinc oxide.

[0079] 1C shows a connection portion 140 where the electrode 111A and the common electrode 113 are electrically connected. In the connection portion 140, an opening is provided in the insulating layer 125 and the resin layer 126 above the electrode 111A. In the opening, the electrode 111A and the common electrode 113 are electrically connected via the organic layer 114.

[0080] 1C shows a connection portion 130 where the connection electrode 111C and the common electrode 113 are electrically connected. In the connection portion 130, the common electrode 113 is provided on the connection electrode 111C via an organic layer 114. An insulating layer 125 is provided in contact with the side surface of the connection electrode 111C, and a resin layer 126 is provided on the insulating layer 125.

[0081] The organic layer 114 does not necessarily have to be provided in the connection section 130. In that case, in the connection section 130, the common electrode 113 is provided in contact with the connection electrode 111C, and the protective layer 121 is provided to cover the common electrode 113.

[0082] The connection parts 130 and 140 can be formed by the same method and have the same configuration, but the thickness of the resin layer 126 in the connection part 140 may be thicker than that in the connection part 130. This is because the connection part 140 is surrounded by a light-emitting element or a light-receiving element, while the connection part 130 has a relatively flat periphery.

[0083] Next, a preferred configuration of the slit 120 and its vicinity will be described in detail. Fig. 2A is a schematic cross-sectional view including a part of the light emitting element 110R, a part of the light emitting element 110G, and the region therebetween in Fig. 1B.

[0084] As shown in Figure 2A, the end of the pixel electrode 111 is preferably tapered. This can improve the step coverage of the organic layer 115, etc. In this specification, the tapered end of an object means that the angle between the surface and the surface to be formed in the end region is greater than 0 degrees and less than 90 degrees, and the object has a cross-sectional shape in which the thickness increases continuously from the end. Although the pixel electrode 111R, etc. has a single-layer structure, multiple layers may be stacked.

[0085] An organic layer 115 is provided to cover the pixel electrode 111 R. An organic layer 115 is also provided to cover the pixel electrode 111 G. These organic layers 115 are formed by dividing a continuous film by a slit 120.

[0086] Organic layer 112R is provided covering organic layer 115, closer to light emitting element 110R than slit 120. Furthermore, layer 135R is provided on organic layer 115, closer to light emitting element 110G than slit 120. Layer 135R can also be described as a fragment of a part of the film that will become organic layer 112R, separated by slit 120 and remaining on the light emitting element 110G side. Layer 135R and organic layer 112R are provided separated by slit 120.

[0087] Furthermore, organic layer 112G is provided covering organic layer 115 on the side closer to light emitting element 110G than slit 120. Furthermore, layer 135G is provided on organic layer 112R on the side closer to light emitting element 110R than slit 120. Layer 135G can also be described as a fragment of a part of the film that will become organic layer 112G, which is separated by slit 120 and remains on the light emitting element 110R side. Layer 135G and organic layer 112G are provided separated by slit 120.

[0088] An end (side surface) of organic layer 112R and an end of layer 135R are provided opposite each other with slit 120 interposed therebetween. Similarly, an end of organic layer 112G and an end of layer 135G are provided opposite each other with slit 120 interposed therebetween.

[0089] Note that one or both of layers 135R and 135G may not be formed depending on the position and width of slit 120, the formation position of organic layer 112R, the formation position of organic layer 112G, etc. Specifically, if the end of organic layer 112R before forming slit 120 overlaps the formation position of slit 120, layer 135R may not be formed.

[0090] An organic layer 116 is provided to cover the organic layer 112R and the layer 135G. An organic layer 116 is also provided to cover the organic layer 112G and the layer 135R. Similar to the organic layer 115, the organic layers 116 are formed by dividing a continuous film by a slit 120.

[0091] The insulating layer 125 is provided inside the slit 120 and is provided in contact with the side surfaces of the pair of organic layers 115, the side surfaces of the organic layers 112R and 112G, the side surfaces of the layers 135R and 135G, and the side surfaces of the pair of organic layers 116. The insulating layer 125 is also provided to cover the upper surface of the substrate 101.

[0092] The resin layer 126 is provided in contact with the upper surface and side surfaces of the insulating layer 125. The resin layer 126 has the function of flattening recesses in the surface on which the organic layer 114 is to be formed.

[0093] An organic layer 114, a common electrode 113, and a protective layer 121 are formed in this order to cover the top surfaces of the organic layer 116, the insulating layer 125, and the resin layer 126. The organic layer 114 may not be provided if it is not necessary.

[0094] Here, layers 135R and 135G are portions located at the edges of the film that will become organic layer 112R or organic layer 112G. In a film formation method using FMM, the thickness of an organic film tends to gradually decrease toward the edges, so layers 135R and 135G have portions that are thinner than organic layer 112R or organic layer 112G. Layers 135R and 135G may be so thin that they cannot be confirmed by cross-sectional observation. Furthermore, even if layer 135R or layer 135G exists, it may be difficult to confirm the boundary between layer 135R and organic layer 112G or the boundary between layer 135G and organic layer 112R by cross-sectional observation.

[0095] On the other hand, layers 135R and 135G contain luminescent compounds (e.g., fluorescent materials, phosphorescent materials, quantum dots, etc.), and thus emit light by photoluminescence when irradiated with ultraviolet light, visible light, or the like in a planar view. Observing this light emission with an optical microscope or the like can confirm the presence of layers 135R and 135G. Specifically, layer 135R and organic layer 112G overlap in the area where layer 135R is located, and therefore, when ultraviolet light or the like is irradiated in that area, both light from layer 135R and light from organic layer 112G are observed. Furthermore, based on the emission spectrum, wavelength, emission color, etc., it can be confirmed that layer 135R or layer 135G contains the same material as organic layer 112R or organic layer 112G. It may also be possible to estimate the compounds contained in layers 135R and 135G.

[0096] The end of the layer 135R opposite the slit 120 extends to a region overlapping with the pixel electrode 111G. That is, the layer 135R has a portion overlapping with both the pixel electrode 111G and the organic layer 112G. Similarly, the layer 135G has a portion overlapping with both the pixel electrode 111R and the organic layer 112R.

[0097] Here, an example is shown in which organic layer 112R and organic layer 112G are separately formed using FMM, and the other organic layers (organic layer 115, organic layer 116) are formed as a continuous film, but this is not limiting. For example, either organic layer 115, organic layer 116, or both may also be separately formed using FMM. In this case, pieces of organic layer 115 or organic layer 116 may remain near slit 120, similar to layer 135R and the like.

[0098] FIG. 2B shows a schematic cross-sectional view of a part of the light-emitting element 110G, a part of the light-receiving element 110S, and the slit 120 located between them.

[0099] Layer 135S is provided on organic layer 112G, closer to light emitting element 110G than slit 120. Layer 135S can also be described as a fragment of a part of the film that will become organic layer 155, which is separated by slit 120 and remains on the light emitting element 110G side. The end of layer 135S on the slit 120 side and the end of organic layer 155 on the slit 120 side are provided opposite each other with slit 120 sandwiched between them.

[0100] Furthermore, layer 135G is provided closer to light receiving element 110S than slit 120 so as to be sandwiched between organic layer 115 and organic layer 155. The end of layer 135G on the slit 120 side and the end of organic layer 112G on the slit 120 side are provided opposite each other with slit 120 interposed therebetween.

[0101] The end of the layer 135S opposite the slit 120 extends to a region overlapping with the pixel electrode 111G. That is, the layer 135S has a portion overlapping with both the pixel electrode 111G and the organic layer 112G. Similarly, the layer 135G has a portion overlapping with both the pixel electrode 111S and the organic layer 155.

[0102] In the enlarged views shown in Figures 2A and 2B, the area between light-emitting element 110R and light-emitting element 110G and the area between light-emitting element 110G and light-receiving element 110S have been described, but similar configurations also exist between light-emitting element 110R and light-emitting element 110B, between light-emitting element 110G and light-emitting element 110B, between light-emitting element 110R and light-receiving element 110S, and between light-emitting element 110B and light-receiving element 110S.

[0103] 3A and 3B are cross-sectional schematic diagrams each showing a case where insulating layer 125 is not provided. In Fig. 3A, resin layer 126 is provided in contact with the side surfaces of pair of organic layers 115, organic layer 112R, organic layer 112G, layer 135R, layer 135G, and pair of organic layers 116. In Fig. 3B, resin layer 126 is provided in contact with the side surfaces of organic layer 155 and layer 135S.

[0104] At this time, a part of the EL layer or PD layer may be dissolved by the solvent used when forming the film that becomes the resin layer 126. Therefore, when the insulating layer 125 is not provided, it is preferable to use water or an alcohol such as ethyl alcohol, methyl alcohol, isopropyl alcohol (IPA), or glycerin as the solvent for the resin layer 126. However, the solvent is not limited to this, and any solvent that does not dissolve or hardly dissolves the EL layer and the PD layer may be used.

[0105] As described above, the display device of one embodiment of the present invention can have a structure in which an insulator covering an edge of a pixel electrode is not provided. In other words, the display device of one embodiment of the present invention has a structure in which an insulator is not provided between the pixel electrode and the EL layer. With this structure, light from the EL layer can be efficiently extracted, thereby significantly reducing viewing angle dependence. For example, in the display device of one embodiment of the present invention, the viewing angle (the maximum angle at which a certain contrast ratio is maintained when the screen is viewed from an oblique direction) can be set to a range of 100° to less than 180°, preferably 150° to 170°. Note that the above viewing angle can be applied to both the vertical and horizontal directions. The display device of one embodiment of the present invention can have improved viewing angle characteristics and enhance image visibility.

[0106] [Modification] Figures 4A and 4B are modifications of Figures 2A and 2B, respectively. Figures 4A and 4B show an example in which an insulating layer 131 is provided to cover the end of the pixel electrode.

[0107] The insulating layer 131 has a function of planarizing the surface on which the organic layer 115 is formed. The edges of the insulating layer 131 are preferably tapered. Furthermore, by using an organic resin for the insulating layer 131, the surface can be made gently curved. This improves the coverage of a film formed on the insulating layer 131. The insulating layer 131 also has a function of preventing unintentional electrical short-circuiting between two adjacent pixel electrodes 111. Furthermore, when a metal mask is used to form the organic layer 112, the organic layer 155, etc., the insulating layer 131 may also function as a spacer to prevent the pixel electrode 111 from contacting the metal mask.

[0108] Examples of materials that can be used for the insulating layer 131 include acrylic resin, polyimide resin, epoxy resin, polyamide resin, polyimideamide resin, siloxane resin, benzocyclobutene resin, phenol resin, and precursors of these resins.

[0109] 4A and 4B, insulating layer 131 may have a recess in the region overlapping with slit 120. This recess can be formed by etching a part of the upper part of insulating layer 131 during etching to form slit 120. A part of insulating layer 125 is formed so as to fit into the recess of insulating layer 131, thereby improving adhesion therebetween.

[0110] The slit 120 is provided in a region overlapping with the insulating layer 131. The layer 135R, the layer 135G, and the layer 135S are also provided in a region overlapping with the insulating layer 131.

[0111] 4A and 4B show an example in which the ends of the layers 135R, 135G, and 135S opposite the slit 120 extend beyond the end of the insulating layer 131. In FIG.

[0112] 5A and 5B show an example in which an insulating layer 132 is provided on an insulating layer 131. FIG.

[0113] The insulating layer 132 overlaps with an end portion of the pixel electrode 111 with the insulating layer 131 interposed therebetween. The insulating layer 132 is provided to cover the end portion of the insulating layer 131. The insulating layer 132 has a portion in contact with the top surface of the pixel electrode 111.

[0114] The insulating layer 132 preferably has tapered edges, which can improve step coverage of a film formed over the insulating layer 132, such as an EL layer provided to cover the edges of the insulating layer 132.

[0115] The insulating layer 132 is preferably thinner than the insulating layer 131. By forming the insulating layer 132 thin, the step coverage of a film formed over the insulating layer 132 can be improved.

[0116] Examples of inorganic insulating materials that can be used for the insulating layer 132 include oxides and nitrides such as silicon oxide, silicon oxynitride, silicon nitride oxide, silicon nitride, aluminum oxide, aluminum oxynitride, and hafnium oxide. In addition, yttrium oxide, zirconium oxide, gallium oxide, tantalum oxide, magnesium oxide, lanthanum oxide, cerium oxide, neodymium oxide, and the like may also be used.

[0117] The insulating layer 132 may also be a stack of films containing the above inorganic insulating materials. For example, it may have a stack structure in which a silicon oxide film or a silicon oxynitride film is stacked on a silicon nitride film, or a stack structure in which a silicon oxide film or a silicon oxynitride film is stacked on an aluminum oxide film. Silicon oxide films and silicon oxynitride films are particularly resistant to etching, and therefore are preferably disposed on the upper side. Furthermore, silicon nitride films and aluminum oxide films are films through which water, hydrogen, oxygen, and the like are resistant to diffusion. Therefore, by disposing them on the insulating layer 131 side, they function as a barrier layer that prevents gases desorbed from the insulating layer 131 from diffusing into the light-emitting element.

[0118] The slit 120 is provided in a region overlapping with the insulating layer 132. The layer 135R, the layer 135G, and the layer 135S are also provided in a region overlapping with the insulating layer 132.

[0119] By providing the insulating layer 132, it is possible to prevent the upper surface of the insulating layer 131 from being etched when the slits 120 are formed.

[0120] 5A and 5B show an example in which the ends of layers 135R, 135G, and 135S opposite slit 120 extend beyond the ends of insulating layer 131 and insulating layer 132, respectively.

[0121] [Configuration Example 2] A more specific configuration example will be described below.

[0122] Fig. 6A is a schematic cross-sectional view of a display device exemplified below. Fig. 6A shows a cross section of a region including light-emitting element 110R, light-emitting element 110G, light-emitting element 110B, light-receiving element 110S, and connection portion 130. Fig. 6B is an enlarged schematic cross-sectional view of slit 120 located between light-emitting element 110R and light-emitting element 110G and its vicinity.

[0123] The light-emitting element 110B has a pixel electrode 111B, an organic layer 115, an organic layer 112B, an organic layer 116, an organic layer 114, and a common electrode 113. In addition, in Fig. 6A, a layer 135B which is a part (a scrap) of the organic layer 112B separated by a slit 120 is provided near the light-emitting element 110R and near the light-receiving element 110S.

[0124] A conductive layer 161 , a conductive layer 162 , and a resin layer 163 are provided below the pixel electrode 111 .

[0125] The conductive layer 161 is provided over the insulating layer 105. The conductive layer 161 has a portion that penetrates the insulating layer 105 in an opening provided in the insulating layer 105. The conductive layer 161 functions as a wiring or an electrode that electrically connects a wiring, a transistor, an electrode, or the like (not shown) located below the insulating layer 105 to the pixel electrode 111.

[0126] A recess is formed in the conductive layer 161 at a portion corresponding to the opening of the insulating layer 105. The resin layer 163 is provided to fill the recess and functions as a planarizing film. The flatter the upper surface of the resin layer 163, the more preferable it is, but the surface may have a gently curved shape. While FIG. 6A and other figures show an example in which the upper surface of the resin layer 163 has a wave-like shape with recesses and protrusions, this is not limiting. For example, the upper surface of the resin layer 163 may be a convex surface, a concave surface, or a flat surface.

[0127] A conductive layer 162 is provided over the conductive layer 161 and the resin layer 163. The conductive layer 162 functions as an electrode that electrically connects the conductive layer 161 and the pixel electrode 111.

[0128] Here, when the light-emitting element 110 is a top-emission light-emitting element, a film reflective to visible light is used as the conductive layer 162, and a film transparent to visible light is used as the pixel electrode 111, so that the conductive layer 162 can function as a reflective electrode. Furthermore, the conductive layer 162 and the pixel electrode 111 can be provided above the opening (also referred to as a contact portion) of the insulating layer 105 via the resin layer 163, so that the portion overlapping with the contact portion can also be used as a light-emitting region. Therefore, the aperture ratio can be increased.

[0129] Similarly, when the light-receiving element 110S is configured as a photoelectric conversion element that receives light from above, a reflective film can be used for the conductive layer 162, and a light-transmitting film can be used for the pixel electrode 111. Furthermore, since the contact portion can also function as a light-receiving region, the light-receiving area can be enlarged, and the light-receiving sensitivity can be improved.

[0130] The thickness of each pixel electrode 111 may be different. In this case, the pixel electrode 111 can be used as an optical adjustment layer for the microcavity. When the microcavity is used, a film having transmissive and reflective properties is used as the common electrode.

[0131] 6A and 6B show an example in which the shape of the resin layer 126 is different from that described above.

[0132] As shown in FIG. 6B , the upper part of the resin layer 126 has a shape that is wider than the slit 120. As will be described later, the insulating layer 125 is processed using the resin layer 126 as an etching mask, so a portion of the insulating layer 125 that is covered by the upper part of the resin layer 126 remains. Furthermore, a portion of the sacrificial layer 145 used in the manufacturing process of the display device also remains for the same reason. Specifically, the sacrificial layer 145 is provided on the organic layer 116 in the vicinity of the slit 120. Furthermore, a portion of the insulating layer 125 is provided so as to cover the upper surface of the sacrificial layer 145. Furthermore, the resin layer 126 is provided so as to cover the sacrificial layer 145 and the insulating layer 125.

[0133] In this case, it is preferable that the end of the insulating layer 125 and the end of the sacrificial layer 145 each have a tapered shape, which can improve the step coverage of the organic layer 114 and the like.

[0134] 6A and 6B, the layers 135R, 135G, 135B, and 135S are each in contact with the insulating layer 125 and have regions overlapping with the insulating layer 125, the sacrificial layer 145, and the resin layer 126. The layers 135R, 135G, 135B, and 135S also have portions overlapping with pixel electrodes of adjacent light-emitting elements or light-receiving elements.

[0135] 7 shows a schematic cross-sectional view of the connection portion 140 and its vicinity. Fig. 7 shows an example in which the connection portion 140 is provided between the light-emitting element 110R and the light-receiving element 110S. While the case in which the connection portion 140 is provided between the light-emitting element 110R and the light-receiving element 110S is shown here, the present invention is not limited to this, and the connection portion 140 may be provided between the light-emitting element 110G and the light-receiving element 110S, or between the light-emitting element 110B and the light-receiving element 110S.

[0136] In the connection portion 140, a conductive layer 161, a resin layer 163, and a conductive layer 162 are stacked, and an electrode 111A is provided on the conductive layer 162. The electrode 111A is surrounded by an insulating layer 125 and a resin layer 126. The resin layer 126 and the insulating layer 125 have an opening that overlaps with the electrode 111A, and the electrode 111A and the organic layer 114 are provided in contact with each other in the opening. The electrode 111A and the common electrode 113 are electrically connected via the organic layer 114.

[0137] It is preferable that organic layer 115, organic layer 112R, organic layer 112G, organic layer 112B, organic layer 155, organic layer 116, etc. are not provided on electrode 111A. Furthermore, it is preferable that layer 135R, layer 135G, layer 135B, and layer 135S are not provided on electrode 111A.

[0138] The connection portion 140 can be formed by the same method as the connection portion 130. However, because the shapes of the steps around the connection portion 140 and the connection portion 130 are different, even if they are formed by the same method, there may be differences in the cross-sectional shapes (for example, thickness or width of the component).

[0139] [Regarding Stray Light] One embodiment of the present invention has a configuration in which a light-emitting element and a light-receiving element are arranged side by side on the same surface. Therefore, if light emitted by the light-emitting element is reflected or scattered inside the display device and incident on the light-receiving element, this becomes a cause of noise when imaging by the light-receiving element. Unlike current leakage, this noise increases depending on the brightness of the light emitted by the light-emitting element. In other words, the noise caused by stray light increases depending on the magnitude of the current flowing through the light-emitting element and the magnitude of the voltage applied to the light-emitting element.

[0140] FIG. 8A shows a schematic cross-sectional view including a light receiving element 110S and a pair of light emitting elements 110G provided adjacent to both sides of the light receiving element 110S.

[0141] 8A , a resin layer 171 and a substrate 170 are provided on the protective layer 121. A light-shielding layer 172 is provided on the surface of the substrate 170 facing the resin layer 171. The light-shielding layer 172 has a function of blocking visible light. The light-shielding layer 172 has openings that overlap with the light-emitting region of the light-emitting element and the light-receiving region of the light-receiving element in a planar view. The light-shielding layer 172 has an area that overlaps with the resin layer 126.

[0142] In the example shown in FIG. 8A , the thickness of the resin layer 171 in the region overlapping with the light-shielding layer 172 is greater than the arrangement interval (arrangement pitch) between the light-emitting element 110G and the light-receiving element 110S. A portion of the light 180 emitted from the light-emitting element 110G is reflected or scattered by the interface between the resin layer 171 and the light-shielding layer 172, and a portion of the reflected or scattered light is incident on the light-receiving element 110S. The thicker the resin layer 171, the greater the difference (also referred to as the gap) in height between the light-receiving element 110S and the light-emitting element 110G, etc., and the light-shielding layer 172, making it easier for a portion of the light 180 to be incident on the light-receiving element 110S. For example, the light 180 emitted from the light-emitting element 110G can be incident on the light-receiving element 110S after a single reflection at the interface between the resin layer 171 and the light-shielding layer 172. Therefore, the degree of attenuation of the light intensity due to reflection is small, and the intensity of the light incident on the light-receiving element 110S is also high.

[0143] Therefore, the influence of stray light can be suppressed by reducing the thickness of the resin layer 171 and narrowing the gap. As shown in FIG. 8B , by reducing the thickness t of the resin layer 171 in the portion sandwiched between the lower surface of the light-shielding layer 172 and the upper surface of the protective layer 121, light 180 is reflected multiple times along the optical path between the light-emitting element 110G and the light-receiving element 110S. Because the intensity of light 180 attenuates with each reflection, narrowing the gap and increasing the number of reflections can reduce the intensity of light reaching the light-receiving element 110S. This suppresses the influence of stray light and improves the signal-to-noise ratio during imaging.

[0144] For simplicity of explanation, the stray light between the light receiving element 110S and the adjacent light emitting element 110G has been described here, but the present invention is not limited to this and is also effective against stray light from the light emitting element 110R and the light emitting element 110B adjacent to the light receiving element 110S. Furthermore, the present invention is also effective against stray light from the light emitting elements 110R, 110G, and 110B that are distant from the light receiving element 110S.

[0145] The smaller the thickness t of the resin layer 171 in the portion sandwiched between the lower surface of the light-shielding layer 172 and the upper surface of the protective layer 121, the better. The thickness t is set to be at least smaller than the arrangement interval (arrangement pitch) between the light-emitting element 110R, the light-emitting element 110G, or the light-emitting element 110B and the light-receiving element 110S. This effectively reduces the amount of light incident on the light-receiving element 110S in one reflection, and effectively reduces the intensity of stray light incident on the light-receiving element 110S.

[0146] For example, the thickness t can be 30 μm or less, preferably 25 μm or less, more preferably 20 μm or less, even more preferably 15 μm or less, even more preferably 10 μm or less, and even more preferably 8 μm or less. There is no particular lower limit to the thickness t, and it may be 0 μm or more, for example, 0.5 μm or more, 1 μm or more, 2 μm or more, or 3 μm or more. Note that a portion of the lower surface of the light-shielding layer 172 and a portion of the upper surface of the protective layer 121 may be in contact with each other, in which case the thickness t is 0 μm.

[0147] Fig. 9 shows an example in which the gap is reduced by a method different from that in Fig. 8B. The display device shown in Fig. 9 includes a layer 173 that functions as a spacer. The layer 173 has a light-transmitting property.

[0148] The layer 173 is provided on the surface of the substrate 170 facing the resin layer 171, and has an opening that overlaps with the light receiving element 110S. The layer 173 also has a region that overlaps with the light emitting element 110G and a region that overlaps with the resin layer 126. Although not shown, the layer 173 also has regions that overlap with the light emitting element 110R and the light emitting element 110B.

[0149] Furthermore, a light-shielding layer 172 is provided along the surface of layer 173 facing resin layer 171. Light-shielding layer 172 is provided to cover the inner wall of the opening of layer 173. Light-shielding layer 172 is also provided inside the opening of layer 173 along the surface of substrate 170.

[0150] With this configuration, the thickness t of the resin layer 171 is small in the region between the light emitting element 110G and the light receiving element 110S, thereby suppressing the influence of stray light. Furthermore, since the distance between the light receiving element 110S and the light-shielding layer 172 can be increased, it is possible to narrow the incident light entering the light receiving element 110S from the outside, and it is possible to capture a clearer image.

[0151] Here, the thickness of the layer 173 is t ＳＰ The thickness t ＳＰ The thicker the thickness t, the greater the distance between the light receiving element 110S and the light blocking layer 172 can be, which is preferable. ＳＰ can be set to 0.5 μm or more, preferably 1 μm or more, and more preferably 2 μm or more. ＳＰ If the thickness is too thick, the display device itself becomes thick, so the thickness can be set to, for example, 30 μm or less, 20 μm or less, 10 μm or less, or 5 μm or less.

[0152] 10A and 10B show an example in which the gap is narrowed by a method different from that described above. In these examples, a layer 175 that functions as a spacer is provided on the light-receiving element 110S. The layer 175 is light-transmitting.

[0153] 10A , the layer 175 is provided on and in contact with the protective layer 121. On the other hand, in FIG. 10B , a resin layer 176 functioning as a planarizing film is provided on the protective layer 121, and the layer 175 is formed on the resin layer 176. Providing the resin layer 176 is preferable because it can reduce variations in the shape and thickness of the layer 175. The resin layer 176 has light-transmitting properties, similar to the layer 175.

[0154] The light-shielding layer 172 is provided at the side edge of the layer 175, covering the top surface and side surfaces. The light-shielding layer 172 has a portion that overlaps with the resin layer 126 via the layer 175, a portion that covers the edge of the layer 175, and a portion that overlaps with the resin layer 126 without the layer 175 interposed therebetween.

[0155] 11A and 11B show an example in which the light-shielding layer 172 in FIGS. 10A and 10B is formed on the surface of the substrate 170 facing the resin layer 171. In this case, it is preferable to use a material for the layer 175 that has a higher refractive index than the resin layer 171. This makes it easier for stray light passing through the resin layer 171 to be reflected at the interface with the layer 175, making it less likely for the stray light to reach the light-receiving element 110S.

[0156] 12A and 12B show a configuration in which the light-shielding layer 172 also serves as a spacer. In Fig. 12A, the light-shielding layer 172 is provided on the substrate 170 side. In Fig. 12B, the light-shielding layer 172 is provided on the protective layer 121.

[0157] 12A , the lower surface of light-shielding layer 172 and the upper surface of protective layer 121 are in contact with each other, and resin layer 171 is divided by light-shielding layer 172. In addition, in FIG. 12B , the upper surface of light-shielding layer 172 and the lower surface of substrate 170 are in contact with each other, and resin layer 171 is divided by light-shielding layer 172. In this way, by dividing resin layer 171 located between light-emitting element 110G and light-receiving element 110S by light-shielding layer 172, stray light passing through resin layer 171 can be effectively blocked.

[0158] Here, light emitted from the light-emitting element 110G etc. is emitted to the outside via the resin layer 171 and the substrate 170. Furthermore, light that has passed through the substrate 170 and the resin layer 171 is incident on the light-receiving element 110S. Therefore, it is preferable to control the refractive indexes of the substrate 170 and the resin layer 171 and minimize interfacial reflection. For example, it is preferable that the difference in refractive index between the substrate 170 and the resin layer 171 is 0.15 or less, as this allows for suppression of interfacial reflection. It is particularly preferable that the difference in refractive index between these elements is 0.1 or less.

[0159] Although an example has been shown here in which the light-shielding layer 172 is configured to be in contact with both the protective layer 121 and the substrate 170 and the resin layer 171 is divided, the light-shielding layer 172 and the protective layer 121, or the light-shielding layer 172 and the substrate 170 may not be in contact with each other and a gap may be formed. In this case, it is preferable that the gap is filled with the resin layer 171. It is also preferable that the thickness of the resin layer 171 located in the gap is thinner than the thickness of the light-shielding layer 172.

[0160] Here, stray light incident on the light receiving element 110S includes light that is incident laterally from the light emitting element 110G to the light receiving element 110S via the insulating layer 125 and the resin layer 126. In order to suppress such stray light, it is preferable to use a resin material that absorbs visible light for the resin layer 126. Furthermore, the resin layer 126 can be made of a resin material containing a pigment or a dye.

[0161] A configuration that can more effectively suppress stray light passing through the resin layer 126 will be described below.

[0162] 13A shows an example in which a slit is provided in the resin layer 126, dividing it into a resin layer 126G on the light-emitting element 110G side and a resin layer 126S on the light-receiving element 110S side. An organic layer 114, a common electrode 113, a protective layer 121, etc. are provided to cover the resin layer 126G and the resin layer 126S. The organic layer 114, the common electrode 113, and the protective layer 121 are provided to fill the gap between the resin layer 126G and the resin layer 126S, and have a concave portion on their upper surface.

[0163] 13B shows an example in which the light-shielding layer 172 shown in FIG. 12B is applied to the configuration of FIG. 13A. A portion of the light-shielding layer 172 is provided so as to fill a recess located between the resin layer 126G and the resin layer 126S.

[0164] By adopting such a configuration, it is possible to block both stray light propagating through resin layer 171 and stray light propagating through resin layer 126, thereby realizing a display device with a high S / N ratio when capturing images.

[0165] The display device shown in FIG. 14A is an example in which a light-shielding layer 177 is provided in addition to the light-shielding layer 172 .

[0166] The light-shielding layer 177 is provided on the protective layer 121 in an area overlapping with the light-shielding layer 172 and the resin layer 126 .

[0167] The light-shielding layer 177 is preferably made of a material that absorbs visible light, similar to the light-shielding layer 172. For example, a material containing a black pigment may be used, or a resin material having light-absorbing properties (such as polyimide) may be used.

[0168] 14A shows an example in which the light-shielding layer 172 and the light-shielding layer 177 are not in contact with each other. In this case, the thickness of the resin layer 171 in the portion sandwiched between the light-shielding layer 172 and the light-shielding layer 177 corresponds to the thickness t.

[0169] 14B shows an example in which the light-shielding layer 172 and the light-shielding layer 177 are in contact with each other. This configuration is preferable because it can block stray light that may be incident from the light-emitting element 110G to the light-receiving element 110S.

[0170] [Manufacturing Method Example] An example of a manufacturing method of a display device according to one embodiment of the present invention will be described below with reference to the drawings. Here, the display device shown in FIG. 6A will be described as an example. FIGS. 15A to 18C are cross-sectional schematic views illustrating steps in a manufacturing method example of a display device, which will be described below. Also, in FIG. 15A and other drawings, a cross-sectional schematic view of the connection portion 130 and its vicinity is also shown on the right side.

[0171] Thin films (insulating films, semiconductor films, conductive films, etc.) constituting the display device can be formed using a sputtering method, a chemical vapor deposition (CVD) method, a vacuum evaporation method, a pulsed laser deposition (PLD) method, an atomic layer deposition (ALD) method, etc. CVD methods include a plasma enhanced chemical vapor deposition (PECVD) method and a thermal CVD method. One type of thermal CVD method is a metal organic chemical vapor deposition (MOCVD) method.

[0172] Furthermore, thin films (insulating films, semiconductor films, conductive films, etc.) constituting the display device can be formed by methods such as spin coating, dipping, spray coating, inkjet, dispensing, screen printing, offset printing, doctor knife method, slit coating, roll coating, curtain coating, knife coating, etc.

[0173] Furthermore, when processing the thin film that constitutes the display device, a photolithography method or the like can be used. Alternatively, the thin film may be processed by a nanoimprint method, a sandblasting method, a lift-off method, or the like. Furthermore, the island-shaped thin film may be directly formed by a film formation method using a shielding mask such as a metal mask.

[0174] There are two typical photolithography methods: one is to form a resist mask on the thin film to be processed, process the thin film by etching or the like, and then remove the resist mask; the other is to form a photosensitive thin film, and then process the thin film into the desired shape by exposure and development.

[0175] In photolithography, the light used for exposure may be, for example, i-line (wavelength 365 nm), g-line (wavelength 436 nm), h-line (wavelength 405 nm), or a mixture of these. Other light sources that can be used include ultraviolet light, KrF laser light, ArF laser light, etc. Exposure may also be performed by immersion exposure technology. Extreme ultraviolet (EUV) light, X-rays, etc. may also be used as light for exposure. An electron beam may also be used instead of light for exposure. Extreme ultraviolet light, X-rays, or an electron beam are preferred because they enable extremely fine processing. When exposure is performed by scanning a beam such as an electron beam, a photomask is not required.

[0176] For etching the thin film, dry etching, wet etching, sandblasting, or the like can be used.

[0177] [Preparation of Substrate 101] A substrate having heat resistance sufficient to withstand at least subsequent heat treatment can be used as the substrate 101. When an insulating substrate is used as the substrate 101, a glass substrate, a quartz substrate, a sapphire substrate, a ceramic substrate, an organic resin substrate, or the like can be used. In addition, a semiconductor substrate such as a single crystal semiconductor substrate made of silicon, silicon carbide, or the like, a polycrystalline semiconductor substrate, a compound semiconductor substrate such as silicon germanium, or an SOI substrate can be used.

[0178] In particular, it is preferable to use a substrate in which a semiconductor circuit including semiconductor elements such as transistors is formed on the semiconductor substrate or insulating substrate as the substrate 101. The semiconductor circuit preferably constitutes, for example, a pixel circuit, a gate line driving circuit (gate driver), a source line driving circuit (source driver), etc. In addition to the above, an arithmetic circuit, a memory circuit, etc. may also be configured.

[0179] An insulating layer 105 is provided on the top of the substrate 101. A plurality of openings reaching transistors, wirings, electrodes, or the like provided in the substrate 101 are provided in the insulating layer 105. The openings can be formed by photolithography.

[0180] The insulating layer 105 can be made of an inorganic insulating material or an organic insulating material.

[0181] [Formation of Conductive Layer 161, Resin Layer 163, Conductive Layer 162, and Pixel Electrode 111] A conductive film that will become the conductive layer 161 is formed on the insulating layer 105. At this time, due to the opening in the insulating layer 105, a recess is formed in the conductive film.

[0182] Subsequently, a resin layer 163 is formed in the recesses of the conductive film.

[0183] It is preferable to use a photosensitive resin as the resin layer 163. In this case, a resin film is first formed, and then the resin film is exposed to light through a photomask, followed by a development process, thereby forming the resin layer 163. Thereafter, in order to adjust the height of the upper surface of the resin layer 163, the upper part of the resin layer 163 may be etched by ashing or the like.

[0184] Furthermore, when a non-photosensitive resin is used as the resin layer 163, after forming the resin film, the resin layer 163 can be formed by etching the upper part of the resin film by ashing or the like until the surface of the conductive film that will become the conductive layer 161 is exposed so as to optimize the thickness.

[0185] Next, a conductive film that becomes the conductive layer 161 and a conductive film that becomes the conductive layer 162 are formed over the resin layer 163. After that, a resist mask is formed over the two conductive film layers by photolithography, and unnecessary portions of the conductive film are removed by etching. After that, the resist mask is removed, so that the conductive layer 161 and the conductive layer 162 can be formed in the same process.

[0186] Although the conductive layers 161 and 162 are formed in the same process using the same photomask here, the conductive layers 161 and 162 may be formed separately using different photomasks. In this case, it is preferable to process the conductive layers 161 and 162 so that the conductive layer 161 is included inside the contour of the conductive layer 162 in a plan view.

[0187] Next, a conductive film is formed to cover the conductive layers 161 and 162, and a part of the conductive film is removed by etching to form the pixel electrode 111 and the connection electrode 111C (FIG. 15A). At this time, as shown in FIG. 15A, it is preferable to form the pixel electrode 111 and the connection electrode 111C so as to include the conductive layers 161 and 162, because the conductive layers 161 and 162 are not exposed to the etching atmosphere during the formation of the pixel electrode 111, etc.

[0188] [Formation of Organic Layer 115] Subsequently, the organic layer 115 is formed on the pixel electrode 111 (FIG. 15B). It is preferable to form the organic layer 115 without using FMM.

[0189] The organic layer 115 may be separately formed using FMM. In this case, the description of the organic layer 112R and the like to be described later can be applied.

[0190] The organic layer 115 can be preferably formed by vacuum deposition. However, the method is not limited thereto, and it can also be formed by sputtering, inkjet printing, etc. Furthermore, the above-mentioned film formation methods can be used as appropriate.

[0191] [Formation of Organic Layers 112R, 112G, 112B, and 155] Subsequently, an island-shaped organic layer 112R is formed on the organic layer 115 so as to encompass the region overlapping with the pixel electrode 111R.

[0192] At this time, the organic layer 112R is formed so as to overlap one or more of the pixel electrodes 111G, 111B, and 111S of the adjacent pixels. By separately forming the organic layer 112R etc. so that not only the organic layers overlap but also the organic layers overlap with the pixel electrodes of the adjacent pixels, the spacing between the pixel electrodes can be narrowed and light-emitting elements and light-receiving elements can be arranged at high density.

[0193] The organic layer 112R is preferably formed by vacuum deposition using an FMM. Alternatively, the island-shaped organic layer 112R may be formed by sputtering using an FMM or by inkjet printing.

[0194] 15C shows the organic layer 112R being deposited via the FMM 151R by a so-called face-down method, in which the organic layer 112R is deposited with the substrate inverted so that the surface to be deposited faces downward.

[0195] In evaporation methods using an FMM, evaporation is often performed over an area wider than the opening pattern of the FMM. Therefore, as shown by the dashed lines in Figure 15C, even when an FMM 151R having the same opening pattern as the pixel electrode 111R is used, the organic layer 112R can be formed up to the region between the pixel electrode 111R and the adjacent pixel electrode. In this case, the organic layer 112R is also formed on the adjacent pixel electrodes 111G and 111S.

[0196] Next, an organic layer 112G is formed on the pixel electrode 111G using the FMM 151G (FIG. 16A). Here, the organic layer 112G is also formed on the adjacent pixel electrodes 111R and 111B.

[0197] Similar to the organic layer 112R, the organic layer 112G is formed in a pattern that extends beyond the pixel electrode 111G. As a result, as shown in region RG in FIG. 16A , a portion in which the organic layer 112G is stacked on the organic layer 112R is formed.

[0198] Next, an organic layer 112B is formed on the pixel electrode 111B using an FMM 151B (not shown), and then an organic layer 155 is formed on the pixel electrode 111S using an FMM 151S.

[0199] Similar to organic layer 112R and organic layer 112B, organic layer 112B and organic layer 155 also have a pattern that extends outward from pixel electrode 111B or pixel electrode 111S. As a result, as shown in Fig. 16B, a region GB where organic layer 112B is stacked on organic layer 112G, a region BS where organic layer 155 is stacked on organic layer 112B, and a region RS where organic layer 155 is stacked on organic layer 112R are formed. Although not shown here, a region where organic layer 155 is stacked on organic layer 112G, a region where organic layer 112B is stacked on organic layer 112R, and the like are also formed.

[0200] Here, it is preferable that organic layer 112R, organic layer 112G, organic layer 112B, and organic layer 155 are not formed on connection electrode 111C. Fig. 16B shows an example in which organic layer 115 is formed on connection electrode 111C, and organic layer 112R, organic layer 112G, and organic layer 112B are not formed.

[0201] Although the organic layer 112R, the organic layer 112G, the organic layer 112B, and the organic layer 155 are formed in this order, the order of formation is not limited to this.

[0202] [Formation of Organic Layer 116] Subsequently, the organic layer 116 is formed to cover the organic layer 112R, the organic layer 112G, the organic layer 112B, and the organic layer 155 (FIG. 16C). The organic layer 116 can be formed by the same method as the organic layer 115.

[0203] [Formation of Sacrificial Films 144 and 146] Subsequently, the sacrificial film 144 is formed to cover the organic layer 116. Thereafter, the sacrificial film 146 is formed on the sacrificial film 144.

[0204] For the sacrificial film 144, a film that is highly resistant to the etching process of the organic layers 115, 112, 155, and 116, i.e., a film with a large etching selectivity, can be used. Also, for the sacrificial film 144, a film that has a large etching selectivity with respect to a sacrificial film such as the sacrificial film 146 described below can be used. Furthermore, for the sacrificial film 144, it is particularly preferable to use a film that can be removed by wet etching, which causes little damage to the organic layers 115, 112, 155, and 116.

[0205] For example, an inorganic film such as a metal film, an alloy film, a metal oxide film, a semiconductor film, or an inorganic insulating film, or an organic insulating film can be suitably used as the sacrificial film 144. The sacrificial film 144 can be formed by various film formation methods such as a sputtering method, a vapor deposition method, a CVD method, or an ALD method.

[0206] In particular, the ALD method or the vacuum deposition method causes less damage to the layer on which the film is formed, so that the sacrificial film 144 formed directly on the organic layer 116 is preferably formed using the ALD method or the vacuum deposition method.

[0207] The sacrificial films 144 and 146 are formed at a temperature lower than the heat resistance temperature of the organic layers 112 and 155. The substrate temperature when forming the sacrificial films 144 and 146 is typically 200° C. or lower, preferably 150° C. or lower, more preferably 120° C. or lower, more preferably 100° C. or lower, and even more preferably 80° C. or lower.

[0208] For example, metal materials such as gold, silver, platinum, magnesium, nickel, tungsten, chromium, molybdenum, iron, cobalt, copper, palladium, titanium, aluminum, yttrium, zirconium, and tantalum, or alloy materials containing such metal materials can be used as the sacrificial film 144. In particular, it is preferable to use a low-melting-point material such as aluminum or silver.

[0209] Furthermore, a metal oxide such as indium gallium zinc oxide (In—Ga—Zn oxide, also referred to as IGZO) can be used as the sacrificial film 144. Furthermore, indium oxide, indium zinc oxide (In—Zn oxide), indium tin oxide (In—Sn oxide), indium titanium oxide (In—Ti oxide), indium tin zinc oxide (In—Sn—Zn oxide), indium titanium zinc oxide (In—Ti—Zn oxide), indium gallium tin zinc oxide (In—Ga—Sn—Zn oxide), etc. can also be used. Alternatively, indium tin oxide containing silicon can also be used.

[0210] The present invention can also be applied to a case where, instead of the gallium, an element M is used (wherein M is one or more elements selected from aluminum, silicon, boron, yttrium, copper, vanadium, beryllium, titanium, iron, nickel, germanium, zirconium, molybdenum, lanthanum, cerium, neodymium, hafnium, tantalum, tungsten, and magnesium). In particular, it is preferable that M is one or more elements selected from aluminum and yttrium.

[0211] Furthermore, an oxide such as aluminum oxide, hafnium oxide, or silicon oxide, a nitride such as silicon nitride or aluminum nitride, or an oxynitride such as silicon oxynitride can be used as the sacrificial film 144. Such an inorganic insulating material can be formed by a film formation method such as a sputtering method, a CVD method, or an ALD method.

[0212] Alternatively, an organic material may be used for the sacrificial film 144. For example, a material that can be dissolved in a chemically stable solvent may be used as the organic material for at least the organic layer 116 located at the top of the EL layer. In particular, a material that dissolves in water or alcohol (a water-soluble material or an alcohol-soluble material) is preferably used for the sacrificial film 144. When forming the sacrificial film 144, it is preferable to apply the sacrificial film 144 dissolved in a solvent such as water or alcohol by a wet film formation method, and then perform a heat treatment to evaporate the solvent. In this case, performing the heat treatment under a reduced pressure atmosphere is preferable because the solvent can be removed at a low temperature and in a short time, thereby reducing thermal damage to the EL layer.

[0213] The sacrificial film 144 may be formed using a wet film formation method such as spin coating, dipping, spray coating, inkjet, dispensing, screen printing, offset printing, doctor knife method, slit coating, roll coating, curtain coating, or knife coating.

[0214] The sacrificial film 144 may be made of an organic resin material such as polyvinyl alcohol (PVA), polyvinyl butyral, polyvinyl pyrrolidone, polyethylene glycol, polyglycerin, pullulan, water-soluble cellulose, or alcohol-soluble polyamide resin. Alternatively, the sacrificial film 144 may be made of a fluororesin such as perfluoropolymer.

[0215] The sacrificial film 146 is a film that is used as a hard mask when etching the sacrificial film 144 later. Furthermore, when processing the sacrificial film 146 later, the sacrificial film 144 is exposed. Therefore, a combination of films that have a large etching selectivity with respect to each other is selected for the sacrificial film 144 and the sacrificial film 146. Therefore, a film that can be used for the sacrificial film 146 can be selected depending on the etching conditions for the sacrificial film 144 and the etching conditions for the sacrificial film 146.

[0216] The sacrificial film 146 can be selected from various materials depending on the etching conditions of the sacrificial film 144 and the etching conditions of the sacrificial film 146. For example, the material can be selected from the films that can be used for the sacrificial film 144.

[0217] For example, an oxide film can be used as the sacrificial film 146. Typically, an oxide film or an oxynitride film such as silicon oxide, silicon oxynitride, aluminum oxide, aluminum oxynitride, hafnium oxide, or hafnium oxynitride can also be used.

[0218] Furthermore, for example, a nitride film can be used as the sacrificial film 146. Specifically, nitrides such as silicon nitride, aluminum nitride, hafnium nitride, titanium nitride, tantalum nitride, tungsten nitride, gallium nitride, and germanium nitride can also be used.

[0219] For example, it is preferable to use an inorganic insulating material such as aluminum oxide, hafnium oxide, or silicon oxide formed by an ALD method as the sacrificial film 144, and a metal oxide containing indium such as In—Ga—Zn oxide formed by a sputtering method as the sacrificial film 146. Alternatively, it is preferable to use a metal such as tungsten, molybdenum, copper, aluminum, titanium, or tantalum, or an alloy containing such a metal, as the sacrificial film 146.

[0220] For example, the sacrificial film 144 may be an organic film (e.g., a PVA film) formed using a vapor deposition method or one of the above-mentioned wet film formation methods, and the sacrificial film 146 may be an inorganic film (e.g., a silicon oxide film or a silicon nitride film) formed using a sputtering method.

[0221] Alternatively, the sacrificial film 146 may be an organic film that can be used for the organic layer 115, the organic layer 112, the organic layer 155, the organic layer 116, and the like. For example, the same organic film as that used for the organic layer 115, the organic layer 112, the organic layer 155, or the organic layer 116 can be used for the sacrificial film 146. Using such an organic film is preferable because it allows the same film formation equipment to be used for the organic layer 115, the organic layer 112, the organic layer 155, the organic layer 116, and the like. Furthermore, when the organic layer 115, the organic layer 112, the organic layer 155, the organic layer 116, and the like are etched later using the sacrificial layer 147 and the sacrificial layer 145 as a mask, the sacrificial layer 147 can be removed at the same time, thereby simplifying the process.

[0222] [Formation of Resist Mask 143] Next, resist masks 143 are formed on the sacrificial film 146 at positions overlapping the pixel electrodes 111R, 111G, 111B, and 111S (FIG. 17A). At this time, no resist mask is formed at a position overlapping the connection electrode 111C. Furthermore, when forming the electrode 111A, it is preferable not to form a resist mask at a position overlapping the electrode 111A.

[0223] The resist mask 143 can be made of a resist material containing a photosensitive resin, such as a positive resist material or a negative resist material.

[0224] Here, when the resist mask 143 is formed on the sacrificial film 144 without the sacrificial film 146, if defects such as pinholes exist in the sacrificial film 144, there is a risk that the organic layer 115, the organic layer 112, the organic layer 155, the organic layer 116, etc. will be dissolved by the solvent of the resist material. By using the sacrificial film 146, it is possible to prevent such problems from occurring.

[0225] In addition, when a material that does not dissolve organic layer 115, organic layer 112, organic layer 155, and organic layer 116 is used as a solvent for the resist material, it may be possible to form resist mask 143 directly on sacrificial film 144 without using sacrificial film 146.

[0226] Etching of Sacrificial Film 146 Next, a portion of the sacrificial film 146 that is not covered by the resist mask 143 is removed by etching to form a patterned sacrificial layer 147 .

[0227] When etching the sacrificial film 146, it is preferable to use etching conditions with a high selectivity so that the sacrificial film 144 is not removed by the etching. The sacrificial film 146 can be etched by wet etching or dry etching, but by using dry etching, shrinkage of the pattern of the sacrificial layer 147 can be suppressed.

[0228] [Removal of Resist Mask 143] Subsequently, the resist mask 143 is removed.

[0229] The resist mask 143 can be removed by wet etching or dry etching. In particular, it is preferable to remove the resist mask 143 by dry etching (also called plasma ashing) using oxygen gas as an etching gas.

[0230] At this time, the resist mask 143 is removed in a state in which the organic layer 116 is covered with the sacrificial film 144, and therefore the influence on the organic layer 115, the organic layer 112, the organic layer 155, and the organic layer 116 is suppressed. In particular, if the organic layer 115, the organic layer 112, the organic layer 155, and the organic layer 116 come into contact with oxygen, it may have an adverse effect on their electrical characteristics, and therefore this is suitable for performing etching using oxygen gas, such as plasma ashing. Furthermore, even when the resist mask 143 is removed by wet etching, the organic layer 116 and the like do not come into contact with the chemical solution, and therefore dissolution of the organic layer 116 and the like can be prevented.

[0231] [Etching of Sacrificial Film 144] Subsequently, using the sacrificial layer 147 as a hard mask, a portion of the sacrificial film 144 is removed by etching to form a patterned sacrificial layer 145 (FIG. 17B).

[0232] The sacrificial film 144 can be etched by wet etching or dry etching, but dry etching is preferable because it can prevent the pattern from shrinking.

[0233] [Etching of organic layers 116, 112, 155, and 115] Subsequently, portions of organic layers 116, 112, 155, and 115 that are not covered by sacrificial layer 145 are removed by etching to form slits 120. At the same time, the upper surface of connection electrode 111C is exposed. Furthermore, when electrode 111A is formed, the upper surface of electrode 111A is also exposed.

[0234] At this time, organic layer 112R, organic layer 112G, organic layer 112B, and a portion of organic layer 155 are separated by etching, thereby forming layer 135R, which is a piece of organic layer 112R, layer 135G, which is a piece of organic layer 112G, layer 135B, which is a piece of organic layer 112B, and layer 135S, which is a piece of organic layer 155.

[0235] In particular, dry etching using an etching gas that does not contain oxygen as a main component is preferably used to etch the organic layers 116, 112, 155, and 115. This makes it possible to suppress deterioration of the organic layers 116, 112, 155, and 115, and to realize a highly reliable display device. Examples of etching gases that do not contain oxygen as a main component include CF ４ , C ４ F ８ , SF ６ , CHF ３ , Cl ２ , H ２ O, BCl ３ , H ２ Alternatively, a noble gas such as He may be used. Also, a mixed gas of the above gas and a dilution gas that does not contain oxygen may be used as the etching gas.

[0236] The etching of the organic layer 116, the organic layer 112, the organic layer 155, and the organic layer 115 is not limited to the above, and may be performed by dry etching using other gases or by wet etching.

[0237] Furthermore, when dry etching using oxygen gas or a mixed gas containing oxygen gas as an etching gas is used to etch the organic layer 116, the organic layer 112, the organic layer 155, and the organic layer 115, the etching rate can be increased. Therefore, etching can be performed under low power conditions while maintaining a sufficiently high etching rate, thereby reducing damage caused by etching. Furthermore, problems such as adhesion of reaction products generated during etching can be suppressed. For example, a mixed gas obtained by adding oxygen gas to the etching gas not containing oxygen as a main component can be used as the etching gas.

[0238] When the organic layer 116, the organic layer 112, the organic layer 155, and the organic layer 115 are etched, the insulating layer 105 is exposed. Therefore, it is preferable to use a film that is highly resistant to etching of the organic layer 115 for the insulating layer 105. Note that when the organic layer 115 is etched, the upper part of the insulating layer 105 may be etched, and the portion not covered by the organic layer 115 may become thinner.

[0239] Note that the sacrificial layer 147 may be etched simultaneously with etching the organic layer 116, the organic layer 112, the organic layer 155, or the organic layer 115. Etching the organic layer 116, the organic layer 112, the organic layer 155, or the organic layer 115 and the sacrificial layer 147 by the same treatment is preferable because it simplifies the process and reduces the manufacturing cost of the display device.

[0240] [Removal of Sacrificial Layer] Subsequently, the sacrificial layer 147 is removed to expose the upper surface of the sacrificial layer 145 ( FIG. 17C ). At this time, it is preferable to leave the sacrificial layer 145. However, it is not necessary to remove the sacrificial layer 147 at this point.

[0241] [Formation of Insulating Film 125f] Subsequently, the insulating film 125f is formed to cover the sacrificial layer 145 and the slits 120.

[0242] The insulating film 125f functions as a barrier layer that prevents impurities such as water from diffusing into the EL layer. The insulating film 125f is preferably formed by an ALD method, which has excellent step coverage, because it can suitably cover the side surfaces of the EL layer.

[0243] The insulating film 125f is preferably the same film as the sacrificial layer 145 because they can be simultaneously etched in a later step. For example, the insulating film 125f and the sacrificial layer 145 are preferably made of an inorganic insulating material such as aluminum oxide, hafnium oxide, or silicon oxide formed by an ALD method.

[0244] Note that the material that can be used for the insulating film 125f is not limited to this, and any material that can be used for the sacrificial film 144 can be used as appropriate.

[0245] [Formation of Resin Layer 126] Next, the resin layer 126 is formed in the region overlapping with the slit 120 ( FIG. 18A ). The resin layer 126 can be formed by the same method as the resin layer 163. For example, the resin layer 126 can be formed by forming a photosensitive resin, followed by exposure and development. The resin layer 126 may also be formed by forming the resin over the entire surface, and then etching part of the resin by ashing or the like.

[0246] Here, an example is shown in which the resin layer 126 is formed to have a width greater than the width of the slit 120 .

[0247] The resin layer 126 is provided so as not to cover the connection electrode 111 C. When the electrode 111 A is formed, the resin layer 126 is formed so as not to cover the entire upper surface of the electrode 111 A.

[0248] [Etching of insulating film 125f and sacrificial layer 145] Subsequently, portions of the insulating film 125f and the sacrificial layer 145 that are not covered with the resin layer 126 are removed by etching to expose the upper surface of the organic layer 116. As a result, the insulating layer 125 and the sacrificial layer 145 are formed in the region covered with the resin layer 126 ( FIG. 18B ).

[0249] It is preferable to etch the insulating film 125f and the sacrificial layer 145 in the same process. In particular, it is preferable to etch the sacrificial layer 145 by wet etching, which causes less etching damage to the organic layer 116. For example, it is preferable to use wet etching using a tetramethylammonium hydroxide (TMAH) aqueous solution, dilute hydrofluoric acid, oxalic acid, phosphoric acid, acetic acid, nitric acid, or a mixture of these.

[0250] Alternatively, it is preferable to remove either or both of the insulating film 125f and the sacrificial layer 145 by dissolving them in a solvent such as water or alcohol. Here, various alcohols such as ethyl alcohol, methyl alcohol, isopropyl alcohol (IPA), or glycerin can be used as the alcohol that can dissolve the insulating film 125f and the sacrificial layer 145.

[0251] After removing the insulating film 125f and the sacrificial layer 145, it is preferable to perform a drying treatment in order to remove water contained inside the organic layer 115, the organic layer 112, the organic layer 155, the organic layer 116, etc., and water adsorbed on the surface. For example, it is preferable to perform a heat treatment in an inert gas atmosphere or a reduced pressure atmosphere. The heat treatment can be performed at a substrate temperature of 50°C or higher and 200°C or lower, preferably 60°C or higher and 150°C or lower, and more preferably 70°C or higher and 120°C or lower. A reduced pressure atmosphere is preferable because it enables drying at a lower temperature.

[0252] The upper surface of the connection electrode 111C is exposed by removing the insulating film 125f and the sacrificial layer 145. Furthermore, when the electrode 111A is formed, the upper surface of the electrode 111A is exposed.

[0253] [Formation of Organic Layer 114] Subsequently, the organic layer 114 is formed to cover the organic layer 116, the insulating layer 125, the sacrificial layer 145, the resin layer 126, and the like.

[0254] The organic layer 114 can be formed by the same method as the organic layer 115. When the organic layer 114 is formed by a vapor deposition method, a shielding mask may be used to prevent the organic layer 114 from being formed on the connection electrode 111C.

[0255] Formation of Common Electrode 113 Next, the common electrode 113 is formed to cover the organic layer 114 .

[0256] The common electrode 113 can be formed by a film formation method such as evaporation or sputtering, or by stacking a film formed by evaporation and a film formed by sputtering.

[0257] The common electrode 113 is preferably formed so as to encompass the region where the organic layer 114 is formed. That is, the common electrode 113 can be configured so that the edge of the organic layer 114 overlaps the common electrode 113. The common electrode 113 may be formed using a shielding mask.

[0258] 18C shows an example in which an organic layer 114 is sandwiched between the connection electrode 111C and the common electrode 113 as the connection portion 130. In this case, it is preferable to use a material with as low an electrical resistance as possible for the organic layer 114. Alternatively, it is preferable to form the organic layer 114 as thin as possible to reduce the electrical resistance in the thickness direction of the organic layer 114. For example, by using an electron-injecting or hole-injecting material with a thickness of 1 nm to 5 nm, preferably 1 nm to 3 nm, for the organic layer 114, it may be possible to reduce the electrical resistance between the connection electrode 111C and the common electrode 113 to a negligible level.

[0259] Similarly, when the connecting portion 140 is provided, the organic layer 114 is sandwiched between the electrode 111A and the common electrode 113.

[0260] [Formation of Protective Layer] Next, a protective layer 121 is formed on the common electrode 113 ( FIG. 18C ). The inorganic insulating film used for the protective layer 121 is preferably formed by sputtering, PECVD, or ALD. The ALD method is particularly preferred because it has excellent step coverage and is less likely to produce defects such as pinholes. Furthermore, the inkjet method is preferably used to form an organic insulating film, because it can form a uniform film in the desired area.

[0261] In this manner, the display device shown in FIG. 6A can be manufactured.

[0262] In the above example, the resin layer 126 is formed to be wider than the slits 120, but the resin layer 126 and the slits 120 may be formed to have the same width.

[0263] FIG. 19A is a schematic cross-sectional view at the time when a resin layer 126 is formed after an insulating film 125f is formed.

[0264] 18A , after forming a resin layer 126 that is wider than the slit 120, the upper part of the resin layer 126 is etched by ashing or the like, thereby forming the resin layer 126 only inside the slit 120. At this time, it is preferable to bring the upper surface of the resin layer 126 as close as possible to the height of the upper surface of the adjacent organic layer 116. This can reduce the step at the portion overlapping with the slit 120 and on both ends thereof, thereby improving the step coverage of the organic layer 114, etc.

[0265] Subsequently, the insulating film 125f and the sacrificial layer 145 are etched in the same manner as above (FIG. 19B). At this time, since no part of the sacrificial layer 145 is covered with the resin layer 126, the sacrificial layer 145 is removed without leaving any pieces.

[0266] Subsequently, the organic layer 114, the common electrode 113, and the protective layer 121 are formed in the same manner as above, thereby completing the production of a display device as shown in FIG. 19C.

[0267] 19C shows an example in which the organic layer 114 is not provided between the connection electrode 111C and the common electrode 113. Because the connection electrode 111C and the common electrode 113 are in contact with each other, the contact resistance between them can be made extremely small, and power consumption can be reduced.

[0268] This completes the description of the example of the method for manufacturing the display device.

[0269] This embodiment mode can be implemented by appropriately combining at least a part thereof with other embodiment modes described in this specification.

[0270] In this embodiment, a structural example of a display device according to one embodiment of the present invention will be described. Here, a display device capable of displaying an image will be described, but the display device can also be used by using a light-emitting element as a light source.

[0271] The display device of the present embodiment can be a high-resolution display device or a large-sized display device. Therefore, the display device of the present embodiment can be used in electronic devices having relatively large screens, such as television devices, desktop or notebook personal computers, computer monitors, digital signage, and large game machines such as pachinko machines, as well as in the display units of digital cameras, digital video cameras, digital photo frames, mobile phones, portable game machines, smartphones, wristwatch-type terminals, tablet terminals, personal digital assistants, and sound reproduction devices.

[0272] [Display Device 400] FIG. 20 shows a perspective view of display device 400, and FIG. 21A shows a cross-sectional view of display device 400.

[0273] The display device 400 has a configuration in which a substrate 452 and a substrate 451 are bonded together. In Fig. 20, the substrate 452 is clearly indicated by a dashed line.

[0274] The display device 400 includes a display portion 462, a circuit 464, wiring 465, and the like. Fig. 20 shows an example in which an IC 473 and an FPC 472 are mounted on the display device 400. Therefore, the structure shown in Fig. 21 can also be considered as a display module including the display device 400, an IC (integrated circuit), and an FPC.

[0275] The circuit 464 can be, for example, a scanning line driver circuit.

[0276] The wiring 465 has a function of supplying signals and power to the display portion 462 and the circuit 464. The signals and power are input to the wiring 465 from the outside via the FPC 472 or input to the wiring 465 from the IC 473.

[0277] 20 shows an example in which an IC 473 is provided on a substrate 451 by a chip-on-glass (COG) method, a chip-on-film (COF) method, or the like. The IC 473 can be, for example, an IC having a scanning line driver circuit or a signal line driver circuit. The display device 400 and the display module may not include an IC. Alternatively, the IC may be mounted on an FPC by a COF method or the like.

[0278] 21A shows an example of a cross section of the display device 400, which is obtained by cutting a part of a region including the FPC 472, a part of the circuit 464, a part of the display unit 462, and a part of a region including a connection portion. In FIG. 21A, an example of a cross section of the display unit 462 is shown, in particular, by cutting a region including the light-emitting element 430b that emits green light (G) and the light-receiving element 440 that receives reflected light (L).

[0279] A display device 400 shown in FIG. 21A includes a transistor 252, a transistor 260, a transistor 258, a light-emitting element 430b, a light-receiving element 440, and the like between a substrate 451 and a substrate 452.

[0280] The light-emitting element 430b and the light-receiving element 440 can be any of the light-emitting elements or light-receiving elements exemplified above.

[0281] Here, when a pixel of a display device has three types of subpixels having light-emitting elements that emit different colors, the three subpixels include subpixels of three colors: red (R), green (G), and blue (B), or subpixels of three colors: yellow (Y), cyan (C), and magenta (M). When a pixel of a display device has four subpixels, the four subpixels include subpixels of four colors: R, G, B, and white (W), or subpixels of four colors: R, G, B, and Y. Alternatively, the subpixels may be equipped with light-emitting elements that emit infrared light.

[0282] Furthermore, as the light receiving element 440, a photoelectric conversion element having sensitivity to light in the red, green, or blue wavelength region, or a photoelectric conversion element having sensitivity to light in the infrared wavelength region can be used.

[0283] The substrate 452 and the protective layer 416 are bonded together via an adhesive layer 442. The adhesive layer 442 is provided to overlap the light-emitting element 430b and the light-receiving element 440, respectively, and a solid sealing structure is applied to the display device 400. A light-shielding layer 417 is provided on the substrate 452.

[0284] The light-shielding layer 417 has a portion that contacts the protective layer 416 and a portion that contacts the substrate 452. The adhesive layer 442 is divided at the light-shielding layer 417.

[0285] The light-emitting element 430b and the light-receiving element 440 each have a conductive layer 411a, a conductive layer 411b, and a conductive layer 411c as pixel electrodes. The conductive layer 411b is reflective to visible light and functions as a reflective electrode. The conductive layer 411c is transparent to visible light and functions as an optical adjustment layer.

[0286] A conductive layer 411a included in the light-emitting element 430b is connected to a conductive layer 272b included in the transistor 260 through an opening provided in the insulating layer 294. The transistor 260 has a function of controlling driving of the light-emitting element. On the other hand, the conductive layer 411a included in the light-receiving element 440 is electrically connected to a conductive layer 272b included in the transistor 258. The transistor 258 has a function of controlling the timing of exposure using the light-receiving element 440, etc.

[0287] An EL layer 412G or a PD layer 412S is provided to cover the pixel electrodes. An insulating layer 421 is provided in contact with the side surfaces of the EL layer 412G and the PD layer 412S, and a resin layer 422 is provided to fill the recesses in the insulating layer 421. An organic layer 414, a common electrode 413, and a protective layer 416 are provided to cover the EL layer 412G and the PD layer 412S. By providing the protective layer 416 to cover the light-emitting element, impurities such as water can be prevented from entering the light-emitting element, thereby improving the reliability of the light-emitting element.

[0288] Furthermore, a layer 415G and a layer 415S are provided in contact with the insulating layer 421. The layer 415G includes the same material as the EL layer 412G, and the layer 415S includes the same material as the PD layer 412S.

[0289] A part of the layer 415G has a portion covering the ends of the conductive layers 411a, 411b, and 411c of the light-receiving element 440 and a portion overlapping with the PD layer 412S and the conductive layer 411c. A part of the layer 415S has a portion covering the ends of the conductive layers 411a, 411b, and 411c of the light-emitting element 430b and a portion overlapping with the EL layer 412G and the conductive layer 411c.

[0290] Light G emitted by the light-emitting element 430b is emitted toward the substrate 452. The light-receiving element 440 receives light L incident through the substrate 452 and converts it into an electrical signal. The substrate 452 is preferably made of a material that is highly transparent to visible light.

[0291] The transistor 252, the transistor 260, and the transistor 258 are all formed over a substrate 451. These transistors can be manufactured using the same material and through the same process.

[0292] Note that the transistor 252, the transistor 260, and the transistor 258 may be fabricated to have different structures. For example, transistors may be fabricated with or without a back gate, or transistors may be fabricated with different materials and / or thicknesses of semiconductors, gate electrodes, gate insulating layers, source electrodes, and drain electrodes.

[0293] The substrate 451 and the insulating layer 262 are bonded together by an adhesive layer 455 .

[0294] In a method for manufacturing the display device 400, first, a formation substrate provided with the insulating layer 262, the transistors, the light-emitting elements, the light-receiving element, and the like is bonded to a substrate 452 provided with a light-shielding layer 417 with an adhesive layer 442. Then, the formation substrate is peeled off, and a substrate 451 is attached to the exposed surface, so that the components formed on the formation substrate are transferred to the substrate 451. The substrate 451 and the substrate 452 each preferably have flexibility. This can increase the flexibility of the display device 400.

[0295] A connection portion 254 is provided in a region of the substrate 451 where the substrate 452 does not overlap. In the connection portion 254, a wiring 465 is electrically connected to an FPC 472 via a conductive layer 466 and a connection layer 292. The conductive layer 466 can be obtained by processing the same conductive film as the pixel electrode. This allows the connection portion 254 and the FPC 472 to be electrically connected via the connection layer 292.

[0296] The transistor 252, the transistor 260, and the transistor 258 each include a conductive layer 271 functioning as a gate, an insulating layer 261 functioning as a gate insulating layer, a semiconductor layer 281 including a channel formation region 281i and a pair of low-resistance regions 281n, a conductive layer 272a connected to one of the pair of low-resistance regions 281n, a conductive layer 272b connected to the other of the pair of low-resistance regions 281n, an insulating layer 275 functioning as a gate insulating layer, a conductive layer 273 functioning as a gate, and an insulating layer 265 covering the conductive layer 273. The insulating layer 261 is located between the conductive layer 271 and the channel formation region 281i. The insulating layer 275 is located between the conductive layer 273 and the channel formation region 281i.

[0297] The conductive layer 272a and the conductive layer 272b are each connected to the low-resistance region 281n through an opening provided in the insulating layer 265. One of the conductive layer 272a and the conductive layer 272b functions as a source, and the other functions as a drain.

[0298] 21A shows an example in which the top surface and side surfaces of the semiconductor layer are covered with an insulating layer 275. The conductive layer 272a and the conductive layer 272b are connected to the low-resistance region 281n through openings provided in the insulating layer 275 and the insulating layer 265, respectively.

[0299] 21B , the insulating layer 275 overlaps with the channel formation region 281i of the semiconductor layer 281 but does not overlap with the low-resistance region 281n. For example, the insulating layer 275 is processed using the conductive layer 273 as a mask, thereby manufacturing the structure shown in FIG. 21B . In FIG. 21B , the insulating layer 265 is provided to cover the insulating layer 275 and the conductive layer 273, and the conductive layer 272a and the conductive layer 272b are connected to the low-resistance region 281n through openings in the insulating layer 265. Furthermore, an insulating layer 268 may be provided to cover the transistor.

[0300] The structure of the transistor included in the display device of this embodiment is not particularly limited. For example, a planar transistor, a staggered transistor, an inverted staggered transistor, or the like can be used. Furthermore, either a top-gate transistor or a bottom-gate transistor structure may be used. Alternatively, gates may be provided above and below a semiconductor layer in which a channel is formed.

[0301] The transistors 252, 260, and 258 each have a structure in which a semiconductor layer in which a channel is formed is sandwiched between two gates. The two gates may be connected and the same signal may be supplied to drive the transistor. Alternatively, the threshold voltage of the transistor may be controlled by applying a potential for controlling the threshold voltage to one of the two gates and a potential for driving the other.

[0302] The crystallinity of a semiconductor material used for a semiconductor layer of a transistor is not particularly limited, and any of an amorphous semiconductor, a single-crystal semiconductor, and a semiconductor having crystallinity other than single crystal (a microcrystalline semiconductor, a polycrystalline semiconductor, or a semiconductor having a crystalline region in part) may be used. The use of a single-crystal semiconductor or a crystalline semiconductor is preferable because it can suppress deterioration of transistor characteristics.

[0303] The semiconductor layer of the transistor preferably includes a metal oxide (also referred to as an oxide semiconductor). That is, the display device of this embodiment preferably includes a transistor using a metal oxide for a channel formation region (hereinafter referred to as an OS transistor).

[0304] The band gap of the metal oxide used for the semiconductor layer of the transistor is preferably 2 eV or more, more preferably 2.5 eV or more. Use of a metal oxide with a wide band gap can reduce the off-state current of the OS transistor.

[0305] The metal oxide preferably contains at least indium or zinc, and more preferably contains indium and zinc. For example, the metal oxide preferably contains indium, M (wherein M is one or more selected from gallium, aluminum, yttrium, tin, silicon, boron, copper, vanadium, beryllium, titanium, iron, nickel, germanium, zirconium, molybdenum, lanthanum, cerium, neodymium, hafnium, tantalum, tungsten, magnesium, and cobalt), and zinc. In particular, M is preferably one or more selected from gallium, aluminum, yttrium, and tin, and more preferably gallium. Note that a metal oxide containing indium, M, and zinc may be referred to as an In-M-Zn oxide hereinafter.

[0306] When the metal oxide is an In-M-Zn oxide, the atomic ratio of In in the In-M-Zn oxide is preferably equal to or greater than the atomic ratio of M. Examples of atomic ratios of metal elements in such In-M-Zn oxides include a composition in which In:M:Zn=1:1:1 or thereabouts, a composition in which In:M:Zn=1:1:1.2 or thereabouts, a composition in which In:M:Zn=2:1:3 or thereabouts, a composition in which In:M:Zn=3:1:2 or thereabouts, a composition in which In:M:Zn=4:2:3 or thereabouts, a composition in which In:M:Zn=4:2:4.1 or thereabouts, a composition in which In:M:Zn=5:1:3 or thereabouts, a composition in which In:M:Zn=5:1:6 or thereabouts, a composition in which In:M:Zn=5:1:7 or thereabouts, a composition in which In:M:Zn=5:1:8 or thereabouts, a composition in which In:M:Zn=6:1:6 or thereabouts, and a composition in which In:M:Zn=5:2:5 or thereabouts. Note that the term "nearby composition" includes a range of ±30% of the desired atomic ratio. By increasing the atomic ratio of indium in the metal oxide, the on-state current, field-effect mobility, and the like of the transistor can be increased.

[0307] For example, when describing a composition in which the atomic ratio of metal elements is In:Ga:Zn = 4:2:3 or thereabout, this includes a case in which, when In is taken as 4, Ga is 1 to 3 and Zn is 2 to 4. Furthermore, when describing a composition in which the atomic ratio of metal elements is In:Ga:Zn = 5:1:6 or thereabout, this includes a case in which, when In is taken as 5, Ga is more than 0.1 and 2 or less and Zn is 5 to 7 or less. Furthermore, when describing a composition in which the atomic ratio of metal elements is In:Ga:Zn = 1:1:1 or thereabout, this includes a case in which, when In is taken as 1, Ga is more than 0.1 and 2 or less and Zn is more than 0.1 and 2 or less.

[0308] Furthermore, the atomic ratio of In in the In-M-Zn oxide may be less than the atomic ratio of M. Examples of atomic ratios of metal elements in such an In-M-Zn oxide include a composition of In:M:Zn=1:3:2 or thereabouts, a composition of In:M:Zn=1:3:3 or thereabouts, and a composition of In:M:Zn=1:3:4 or thereabouts. Increasing the atomic ratio of M in the metal oxide can increase the band gap of the In-M-Zn oxide and improve its resistance to a negative bias stress test due to light irradiation. Specifically, the amount of change in threshold voltage or the amount of change in shift voltage (Vsh) measured in a negative bias temperature illumination stress (NBTIS) test of a transistor can be reduced. The shift voltage (Vsh) is defined as the Vg at which the tangent to the maximum slope of the drain current (Id)-gate voltage (Vg) curve of the transistor intersects with the line of Id=1 pA.

[0309] Alternatively, the semiconductor layer of the transistor may include silicon, such as amorphous silicon or crystalline silicon (low-temperature polysilicon (also referred to as LTPS) or single-crystal silicon).

[0310] In particular, low-temperature polysilicon has relatively high mobility and can be formed on a glass substrate, and therefore can be suitably used in display devices. For example, a transistor using low-temperature polysilicon in a semiconductor layer (LTPS transistor) can be applied to the transistor 252 and the like in the driver circuit, and a transistor using an oxide semiconductor in a semiconductor layer (OS transistor) can be applied to the transistor 260, the transistor 258, and the like provided in the pixel. By using both an LTPS transistor and an OS transistor, a display device with low power consumption and high driving capability can be realized. A structure in which an LTPS transistor and an OS transistor are combined may be referred to as LTPO. Note that, as a more preferred example, it is preferable to use an OS transistor as a transistor that functions as a switch for controlling conduction / non-conduction between wirings and an LTPS transistor as a transistor for controlling current.

[0311] Alternatively, the semiconductor layer of the transistor may include a layered material that functions as a semiconductor. A layered material is a general term for a group of materials having a layered crystal structure. A layered crystal structure is a structure in which layers formed by covalent or ionic bonds are stacked via bonds weaker than covalent or ionic bonds, such as van der Waals forces. A layered material has high electrical conductivity within a unit layer, i.e., high two-dimensional electrical conductivity. By using a material that functions as a semiconductor and has high two-dimensional electrical conductivity in the channel formation region, a transistor with a large on-state current can be provided.

[0312] Examples of the layered material include graphene, silicene, and chalcogenides. Chalcogenides are compounds containing chalcogen (an element belonging to Group 16). Examples of chalcogenides include transition metal chalcogenides and Group 13 chalcogenides. Specific examples of transition metal chalcogenides that can be used as semiconductor layers of transistors include molybdenum sulfide (typically MoS ２ ), molybdenum selenide (typically MoSe ２ ), molybdenum telluride (typically MoTe ２ ), tungsten sulfide (typically WS２ ), tungsten selenide (typically WSe ２ ), tungsten tellurium (typically WTe ２ ), hafnium sulfide (typically HfS ２ ), hafnium selenide (typically HfSe ２ ), zirconium sulfide (typically ZrS ２ ), zirconium selenide (typically ZrSe ２ ) etc.

[0313] The display device shown in FIG. 21A includes an OS transistor and has a structure in which a common layer between light-emitting elements is separated. This structure can significantly reduce leakage current that may flow through the transistor and leakage current that may flow between adjacent light-emitting elements (also referred to as lateral leakage current or side leakage current). Furthermore, with this structure, when an image is displayed on the display device, a viewer can observe one or more of image clarity, image sharpness, high saturation, and a high contrast ratio. By using a structure in which the leakage current that may flow through the transistor and the lateral leakage current between light-emitting elements are extremely low, a display (also referred to as true black display) with extremely low light leakage (so-called floating black) that may occur during black display can be achieved.

[0314] In particular, among light-emitting devices with an MML structure, by applying a color-coded structure (SBS structure), the layers provided between the light-emitting elements (for example, organic layers used in common between the light-emitting elements, also called common layers) are configured to be separated, thereby making it possible to achieve a display with no side leakage or extremely little side leakage.

[0315] The transistors included in the circuit 464 may have the same structure as or different from the transistors included in the display portion 462. The transistors included in the circuit 464 may all have the same structure or may have two or more types of structures. Similarly, the transistors included in the display portion 462 may all have the same structure or may have two or more types of structures.

[0316] At least one insulating layer covering the transistor is preferably made of a material that is resistant to the diffusion of impurities such as water and hydrogen. This allows the insulating layer to function as a barrier layer. With this structure, it is possible to effectively prevent impurities from diffusing into the transistor from the outside, thereby improving the reliability of the display device.

[0317] It is preferable to use an inorganic insulating film for each of the insulating layers 261, 262, 265, 268, and 275. Examples of the inorganic insulating film that can be used include a silicon nitride film, a silicon oxynitride film, a silicon oxide film, a silicon nitride oxide film, an aluminum oxide film, and an aluminum nitride film. Alternatively, a hafnium oxide film, an yttrium oxide film, a zirconium oxide film, a gallium oxide film, a tantalum oxide film, a magnesium oxide film, a lanthanum oxide film, a cerium oxide film, and a neodymium oxide film may also be used. Two or more of the above-described inorganic insulating films may be stacked.

[0318] Here, organic insulating films often have lower barrier properties than inorganic insulating films. Therefore, it is preferable that the organic insulating film has an opening near the edge of the display device 400. This makes it possible to prevent impurities from entering from the edge of the display device 400 through the organic insulating film. Alternatively, the organic insulating film may be formed so that the edge of the organic insulating film is located inside the edge of the display device 400, so that the organic insulating film is not exposed at the edge of the display device 400.

[0319] An organic insulating film is suitable for the insulating layer 294 that functions as a planarizing layer. Materials that can be used for the organic insulating film include acrylic resin, polyimide resin, epoxy resin, polyamide resin, polyimideamide resin, siloxane resin, benzocyclobutene resin, phenol resin, and precursors of these resins.

[0320] It is preferable to provide a light-shielding layer 417 on the surface of substrate 452 facing substrate 451. In addition, various optical members can be arranged on the outside of substrate 452. Examples of optical members include a polarizing plate, a retardation plate, a light diffusion layer (such as a diffusion film), an anti-reflection layer, and a light-collecting film. In addition, an antistatic film that suppresses the adhesion of dust, a water-repellent film that makes it difficult for dirt to adhere, a hard coat film that suppresses the occurrence of scratches during use, an impact absorbing layer, etc. may be arranged on the outside of substrate 452.

[0321] 21A shows a connection portion 278. The common electrode 413 and a wiring are electrically connected at the connection portion 278. In FIG. 21A, an example is shown in which the same layered structure as that of the pixel electrode is applied to the wiring.

[0322] The substrate 451 and the substrate 452 can each be made of glass, quartz, ceramic, sapphire, resin, metal, alloy, semiconductor, or the like. A material that transmits light is used for the substrate on the side from which light from the light-emitting element is extracted. Using a flexible material for the substrate 451 and the substrate 452 can increase the flexibility of the display device. Alternatively, a polarizing plate may be used for the substrate 451 or the substrate 452.

[0323] The substrates 451 and 452 can be made of polyester resins such as polyethylene terephthalate (PET) and polyethylene naphthalate (PEN), polyacrylonitrile resin, acrylic resin, polyimide resin, polymethyl methacrylate resin, polycarbonate (PC) resin, polyethersulfone (PES) resin, polyamide resin (nylon, aramid, etc.), polysiloxane resin, cycloolefin resin, polystyrene resin, polyamideimide resin, polyurethane resin, polyvinyl chloride resin, polyvinylidene chloride resin, polypropylene resin, polytetrafluoroethylene (PTFE) resin, ABS resin, cellulose nanofiber, etc. One or both of the substrates 451 and 452 may be made of glass having a thickness sufficient to provide flexibility.

[0324] When a circularly polarizing plate is superimposed on a display device, it is preferable that the display device has a substrate with high optical isotropy. A substrate with high optical isotropy has small birefringence (or a small amount of birefringence).

[0325] The absolute value of the retardation (phase difference) of a substrate having high optical isotropy is preferably 30 nm or less, more preferably 20 nm or less, and even more preferably 10 nm or less.

[0326] Examples of films with high optical isotropy include triacetyl cellulose (TAC, also known as cellulose triacetate) films, cycloolefin polymer (COP) films, cycloolefin copolymer (COC) films, and acrylic films.

[0327] Furthermore, when a film is used as a substrate, the film may absorb water, causing deformation such as wrinkles in the display panel. Therefore, it is preferable to use a film with low water absorption for the substrate. For example, it is preferable to use a film with a water absorption rate of 1% or less, more preferably 0.1% or less, and even more preferably 0.01% or less.

[0328] The adhesive layer can be made of various curable adhesives, such as photo-curable adhesives (e.g., ultraviolet curable), reactive curable adhesives, thermosetting adhesives, and anaerobic adhesives. Examples of such adhesives include epoxy resin, acrylic resin, silicone resin, phenolic resin, polyimide resin, imide resin, PVC (polyvinyl chloride) resin, PVB (polyvinyl butyral) resin, and EVA (ethylene vinyl acetate) resin. Materials with low moisture permeability, such as epoxy resin, are particularly preferred. Two-component resins may also be used. Adhesive sheets, etc., may also be used.

[0329] The connection layer 292 may be made of an anisotropic conductive film (ACF), an anisotropic conductive paste (ACP), or the like.

[0330] Materials that can be used for conductive layers such as the gate, source, and drain of a transistor, as well as various wirings and electrodes that constitute a display device include metals such as aluminum, titanium, chromium, nickel, copper, yttrium, zirconium, molybdenum, silver, tantalum, and tungsten, and alloys containing these metals as main components, etc. Films containing these materials can be used as a single layer or a stacked layer structure.

[0331] Examples of light-transmitting conductive materials include conductive oxides such as indium oxide, indium tin oxide, indium zinc oxide, zinc oxide, and zinc oxide containing gallium, or graphene. Alternatively, metal materials such as gold, silver, platinum, magnesium, nickel, tungsten, chromium, molybdenum, iron, cobalt, copper, palladium, and titanium, or alloy materials containing such metal materials, can be used. Alternatively, nitrides of such metal materials (e.g., titanium nitride) can be used. When using metal materials or alloy materials (or their nitrides), it is preferable to thin them sufficiently to ensure light-transmitting properties. A stacked film of the above materials can also be used as the conductive layer. For example, a stacked film of an alloy of silver and magnesium and indium tin oxide is preferable because it can enhance conductivity. These materials can also be used for conductive layers such as various wirings and electrodes constituting a display device, and for conductive layers (conductive layers functioning as pixel electrodes or common electrodes) of light-emitting elements.

[0332] Examples of insulating materials that can be used for each insulating layer include resins such as acrylic resin and epoxy resin, and inorganic insulating materials such as silicon oxide, silicon oxynitride, silicon nitride oxide, silicon nitride, and aluminum oxide.

[0333] At least a part of the configuration examples exemplified in this embodiment and the corresponding drawings can be combined as appropriate with other configuration examples or drawings.

[0334] This embodiment mode can be implemented by appropriately combining at least a part thereof with other embodiment modes described in this specification.

[0335] Embodiment 3 In this embodiment, a display device according to one embodiment of the present invention will be described.

[0336] A display device according to one embodiment of the present invention includes a light-receiving element (also referred to as a light-receiving device) and a light-emitting element (also referred to as a light-emitting device). Alternatively, the display device according to one embodiment of the present invention may include a light-receiving and light-emitting element (also referred to as a light-emitting and receiving device) and a light-emitting element.

[0337] First, a display device having a light receiving element and a light emitting element will be described.

[0338] A display device according to one embodiment of the present invention includes a light-receiving element and a light-emitting element in a light-receiving and light-emitting portion. In the display device according to one embodiment of the present invention, the light-emitting and receiving portion includes light-emitting elements arranged in a matrix, and an image can be displayed in the light-receiving and light-emitting portion. The light-receiving and light-emitting portion also includes light-receiving elements arranged in a matrix, and the light-receiving and light-emitting portion has one or both of an imaging function and a sensing function. The light-receiving and light-emitting portion can be used as an image sensor, a touch sensor, or the like. That is, by detecting light in the light-receiving and light-emitting portion, an image can be captured and a touch operation of an object (such as a finger or a pen) can be detected. Furthermore, the display device according to one embodiment of the present invention can utilize the light-emitting element as a light source for a sensor. Therefore, a light-receiving portion and a light source are not required separately from the display device, and the number of components in an electronic device can be reduced.

[0339] In a display device of one embodiment of the present invention, when light emitted by a light-emitting element included in the light-emitting and receiving portion is reflected (or scattered) by an object, the light-receiving element can detect the reflected light (or scattered light); therefore, imaging, detection of touch operations, and the like are possible even in dark places.

[0340] The light-emitting element included in the display device of one embodiment of the present invention functions as a display element (also referred to as a display device).

[0341] As the light-emitting element, it is preferable to use an EL element (also referred to as an EL device) such as an OLED or a QLED. Examples of light-emitting materials contained in EL elements include fluorescent materials (fluorescent materials), phosphorescent materials (phosphorescent materials), and materials that exhibit thermally activated delayed fluorescence (thermally activated delayed fluorescence (TADF) materials). As the light-emitting material contained in EL elements, not only organic compounds but also inorganic compounds (quantum dot materials, etc.) can be used. Furthermore, LEDs such as micro LEDs can also be used as light-emitting elements.

[0342] A display device according to one embodiment of the present invention has a function of detecting light using a light-receiving element.

[0343] When the light receiving element is used as an image sensor, the display device can capture an image using the light receiving element, for example, the display device can be used as a scanner.

[0344] An electronic device to which the display device of one embodiment of the present invention is applied can acquire data related to biometric information such as a fingerprint or palm print by using a function as an image sensor. That is, a biometric authentication sensor can be built into the display device. The built-in biometric authentication sensor in the display device reduces the number of components in the electronic device compared to a case in which a biometric authentication sensor is provided separately from the display device, and the electronic device can be made smaller and lighter.

[0345] Furthermore, when the light receiving element is used as a touch sensor, the display device can detect a touch operation of an object using the light receiving element.

[0346] The light receiving element may be, for example, a pn-type or pin-type photodiode. The light receiving element functions as a photoelectric conversion element (also called a photoelectric conversion device) that detects light incident on the light receiving element and generates electric charge. The amount of electric charge generated by the light receiving element is determined based on the amount of light incident on the light receiving element.

[0347] In particular, it is preferable to use an organic photodiode having a layer containing an organic compound as the light-receiving element. Organic photodiodes can be easily made thin, lightweight, and large in area, and have a high degree of freedom in shape and design, making them applicable to a variety of devices.

[0348] In one embodiment of the present invention, an organic EL element (also referred to as an organic EL device) is used as a light-emitting element, and an organic photodiode is used as a light-receiving element. The organic EL element and the organic photodiode can be formed over the same substrate. Therefore, the organic photodiode can be built into a display device using the organic EL element.

[0349] If all layers constituting an organic EL element and an organic photodiode were to be fabricated separately, the number of film-forming steps would be enormous. However, since organic photodiodes have many layers that can be configured in common with organic EL elements, the number of film-forming steps can be reduced by forming the layers that can be configured in common at the same time.

[0350] For example, one of the pair of electrodes (common electrode) can be a layer common to the light-receiving element and the light-emitting element. Furthermore, for example, at least one of the hole injection layer, the hole transport layer, the electron transport layer, and the electron injection layer can be a layer common to the light-receiving element and the light-emitting element. By having a common layer for the light-receiving element and the light-emitting element in this way, the number of film formations and the number of masks can be reduced, thereby reducing the manufacturing process and manufacturing costs of the display device. Furthermore, a display device having a light-receiving element can be manufactured using existing manufacturing equipment and manufacturing methods for display devices.

[0351] Next, a display device having light emitting and receiving elements and a light emitting element will be described. Note that the description of the same functions, actions, effects, etc. as those described above may be omitted.

[0352] In a display device according to one embodiment of the present invention, a subpixel that exhibits one of the colors has a light-emitting / receiving element instead of a light-emitting element, and a subpixel that exhibits the other color has a light-emitting element. The light-emitting / receiving element has both a function of emitting light (light-emitting function) and a function of receiving light (light-receiving function). For example, when a pixel has three subpixels, i.e., a red subpixel, a green subpixel, and a blue subpixel, at least one subpixel has a light-emitting / receiving element, and the other subpixels have light-emitting elements. Therefore, the light-emitting / receiving portion of the display device according to one embodiment of the present invention has a function of displaying an image using both the light-emitting / receiving element and the light-emitting element.

[0353] By using a light-receiving / light-emitting element that serves as both a light-emitting element and a light-receiving element, a pixel can be given a light-receiving function without increasing the number of subpixels included in the pixel. This allows one or both of an imaging function and a sensing function to be added to the light-receiving / light-emitting portion of the display device while maintaining the aperture ratio of the pixel (aperture ratio of each subpixel) and the resolution of the display device. Therefore, the display device of one embodiment of the present invention can have a higher pixel aperture ratio and can easily achieve higher resolution than a display device in which a subpixel having a light-receiving element is provided separately from a subpixel having a light-emitting element.

[0354] In a display device according to one embodiment of the present invention, light-emitting and receiving elements and light-emitting elements are arranged in a matrix in a light-emitting and receiving portion, and an image can be displayed in the light-emitting and receiving portion. The light-emitting and receiving portion can be used as an image sensor, a touch sensor, or the like. In the display device according to one embodiment of the present invention, the light-emitting element can be used as a light source for the sensor. Therefore, imaging, detection of a touch operation, and the like can be performed even in a dark place.

[0355] The light-emitting / receiving element can be fabricated by combining an organic EL element and an organic photodiode. For example, the light-emitting / receiving element can be fabricated by adding an active layer of an organic photodiode to the layered structure of the organic EL element. Furthermore, the light-emitting / receiving element fabricated by combining an organic EL element and an organic photodiode can suppress an increase in the number of film-forming steps by forming layers that can have a common configuration with the organic EL element in a single step.

[0356] For example, one of the pair of electrodes (common electrode) may be a layer common to the light-emitting and light-emitting elements. Also, for example, at least one of the hole injection layer, the hole transport layer, the electron transport layer, and the electron injection layer may be a layer common to the light-emitting and light-emitting elements.

[0357] Note that the layers of the light emitting / receiving element may have different functions depending on whether the light emitting / receiving element functions as a light receiving element or a light emitting element. In this specification, the components are referred to based on their functions when the light emitting / receiving element functions as a light emitting element.

[0358] The display device of this embodiment mode has a function of displaying an image using a light-emitting element and a light-emitting / light-emitting element. That is, the light-emitting element and the light-emitting / light-emitting element function as display elements.

[0359] The display device of this embodiment has a function of detecting light using a light receiving and emitting element, which can detect light having a shorter wavelength than light emitted by the light receiving and emitting element itself.

[0360] When the light-emitting / receiving elements are used as an image sensor, the display device of this embodiment can capture an image using the light-emitting / receiving elements. When the light-emitting / receiving elements are used as a touch sensor, the display device of this embodiment can detect a touch operation of an object using the light-emitting / receiving elements.

[0361] The light-receiving / light-emitting element functions as a photoelectric conversion element. The light-receiving / light-emitting element can be fabricated by adding an active layer of a light-receiving element to the configuration of the light-emitting element. For example, the active layer of a pn-type or pin-type photodiode can be used for the light-receiving / light-emitting element.

[0362] In particular, it is preferable to use an organic photodiode active layer having a layer containing an organic compound as the light-receiving / light-emitting element. Organic photodiodes can be easily made thin, lightweight, and large in area, and have a high degree of freedom in shape and design, making them applicable to a variety of devices.

[0363] A display device, which is an example of a display device according to one embodiment of the present invention, will be described in more detail below with reference to drawings.

[0364] 22A shows a schematic diagram of a display panel 200. The display panel 200 includes a substrate 201, a substrate 202, a light receiving element 212, a light emitting element 211R, a light emitting element 211G, a light emitting element 211B, a functional layer 203, and the like.

[0365] The light-emitting elements 211R, 211G, 211B, and light-receiving element 212 are provided between the substrate 201 and the substrate 202. The light-emitting elements 211R, 211G, and 211B emit red (R), green (G), and blue (B) light, respectively. Note that hereinafter, when there is no need to distinguish between the light-emitting elements 211R, 211G, and 211B, they may be referred to as light-emitting elements 211.

[0366] The display panel 200 has a plurality of pixels arranged in a matrix. Each pixel has one or more sub-pixels. Each sub-pixel has one light-emitting element. For example, a pixel may have three sub-pixels (e.g., three colors of R, G, and B, or three colors of yellow (Y), cyan (C), and magenta (M)), or four sub-pixels (e.g., four colors of R, G, B, and white (W), or four colors of R, G, B, and Y). Each pixel also has a light-receiving element 212. The light-receiving element 212 may be provided in all pixels or in some pixels. Furthermore, one pixel may have multiple light-receiving elements 212.

[0367] 22A shows a state in which finger 220 touches the surface of substrate 202. A portion of the light emitted by light-emitting element 211G is reflected at the contact point between substrate 202 and finger 220. A portion of the reflected light is then incident on light-receiving element 212, making it possible to detect that finger 220 has touched substrate 202. In other words, display panel 200 can function as a touch panel.

[0368] The functional layer 203 has a circuit for driving the light-emitting elements 211R, 211G, and 211B, and a circuit for driving the light-receiving element 212. The functional layer 203 is provided with switches, transistors, capacitors, wiring, and the like. Note that when the light-emitting elements 211R, 211G, and 211B and the light-receiving element 212 are driven by a passive matrix method, a configuration without switches, transistors, and the like may be used.

[0369] It is preferable that the display panel 200 has a function of detecting the fingerprint of a finger 220. Fig. 22B is a schematic enlarged view of a contact portion when the finger 220 is in contact with the substrate 202. Fig. 22B also shows light-emitting elements 211 and light-receiving elements 212 arranged alternately.

[0370] A fingerprint is formed by concave and convex portions of the finger 220. Therefore, the convex portions of the fingerprint are in contact with the substrate 202 as shown in FIG.

[0371] Light reflected from a surface, interface, etc. can be classified as specular reflection or diffuse reflection. Specular reflection is highly directional light, with the angle of incidence and the angle of reflection matching, while diffuse reflection is low-directional light, with low angular dependence of intensity. The diffuse reflection component is dominant in the light reflected from the surface of the finger 220. On the other hand, the specular reflection component is dominant in the light reflected from the interface between the substrate 202 and the atmosphere.

[0372] The intensity of light reflected by the contact or non-contact surface between the finger 220 and the substrate 202 and incident on the light receiving element 212 located directly below them is the sum of specularly reflected light and diffusely reflected light. As described above, at the concave portions of the finger 220, the substrate 202 and the finger 220 do not come into contact, so specularly reflected light (indicated by the solid arrows) is dominant, whereas at the convex portions, they come into contact, so diffusely reflected light (indicated by the dashed arrows) from the finger 220 is dominant. Therefore, the intensity of light received by the light receiving element 212 located directly below the concave portions is higher than that of the light receiving element 212 located directly below the convex portions. This makes it possible to capture an image of the fingerprint of the finger 220.

[0373] A clear fingerprint image can be obtained by arranging the light receiving elements 212 at an interval smaller than the distance between two convex portions of a fingerprint, preferably the distance between adjacent convex and concave portions. Since the distance between convex and concave portions of a human fingerprint is approximately 200 μm, the interval between the light receiving elements 212 is, for example, 400 μm or less, preferably 200 μm or less, more preferably 150 μm or less, even more preferably 100 μm or less, and even more preferably 50 μm or less, and is 1 μm or more, preferably 10 μm or more, and more preferably 20 μm or more.

[0374] Fig. 22C shows an example of a fingerprint image captured by display panel 200. In Fig. 22C, the outline of finger 220 is indicated by a dashed line and the outline of contact portion 221 is indicated by a dashed line within imaging range 223. Within contact portion 221, a fingerprint 222 with high contrast can be captured due to differences in the amount of light incident on light receiving element 212.

[0375] The display panel 200 can also function as a touch panel or a pen tablet. Fig. 22D shows a state in which the tip of a stylus 225 is in contact with the substrate 202 and is slid in the direction of the dashed arrow.

[0376] As shown in Figure 22D, the diffuse reflected light scattered by the tip of the stylus 225 and the contact surface of the substrate 202 is incident on the light receiving element 212 located at the part overlapping with the contact surface, thereby enabling the position of the tip of the stylus 225 to be detected with high accuracy.

[0377] 22E shows an example of a trajectory 226 of the stylus 225 detected by the display panel 200. The display panel 200 is capable of detecting the position of a detectable object such as the stylus 225 with high positional accuracy, and therefore is also capable of performing high-resolution drawing in drawing applications, etc. Furthermore, unlike when a capacitive touch sensor, an electromagnetic induction touch pen, or the like is used, the position of even a highly insulating detectable object can be detected, and therefore the material of the tip of the stylus 225 is not a factor, and various writing implements (e.g., a brush, a glass pen, a feather pen, etc.) can be used.

[0378] 22F to 22H show an example of a pixel that can be applied to the display panel 200. FIG.

[0379] 22F and 22G each have a red (R) light-emitting element 211R, a green (G) light-emitting element 211G, a blue (B) light-emitting element 211B, and a light-receiving element 212. The pixel has a pixel circuit for driving the light-emitting element 211R, the light-emitting element 211G, the light-emitting element 211B, and the light-receiving element 212, respectively.

[0380] Fig. 22F shows an example in which three light-emitting elements and one light-receiving element are arranged in a 2 x 2 matrix, while Fig. 22G shows an example in which three light-emitting elements are arranged in a row, with one horizontally long light-receiving element 212 arranged below them.

[0381] 22H is an example of a pixel having a white (W) light-emitting element 211W. Here, four light-emitting elements are arranged in a row, and a light-receiving element 212 is arranged below them.

[0382] The pixel configuration is not limited to the above, and various arrangement methods can be adopted.

[0383] [Configuration Example 1-2] Hereinafter, an example of a configuration including a light-emitting element that emits visible light, a light-emitting element that emits infrared light, and a light-receiving element will be described.

[0384] The display panel 200A shown in Fig. 23A has a light-emitting element 211IR in addition to the configuration exemplified in Fig. 22A. The light-emitting element 211IR is a light-emitting element that emits infrared light IR. In this case, it is preferable to use an element that can receive at least the infrared light IR emitted by the light-emitting element 211IR as the light-receiving element 212. It is more preferable to use an element that can receive both visible light and infrared light as the light-receiving element 212.

[0385] As shown in FIG. 23A, when a finger 220 touches the substrate 202, the infrared light IR emitted from the light-emitting element 211IR is reflected by the finger 220, and a portion of the reflected light is incident on the light-receiving element 212, thereby obtaining position information of the finger 220.

[0386] 23B to 23D show examples of pixels that can be applied to the display panel 200A.

[0387] Fig. 23B shows an example in which three light-emitting elements are arranged in a row, and below them, light-emitting element 211IR and light-receiving element 212 are arranged side by side. Fig. 23C shows an example in which four light-emitting elements including light-emitting element 211IR are arranged in a row, and below them, light-receiving element 212 is arranged.

[0388] FIG. 23D shows an example in which three light-emitting elements and a light-receiving element 212 are arranged on all four sides with the light-emitting element 211IR at the center.

[0389] In the pixels shown in FIGS. 23B to 23D, the positions of the light-emitting elements and the light-emitting elements and the light-receiving elements can be interchanged.

[0390] [Configuration Example 1-3] Hereinafter, an example of a configuration including a light-emitting element that emits visible light and a light-receiving / light-emitting element that emits visible light and receives visible light will be described.

[0391] The display panel 200B shown in Fig. 24A has a light-emitting element 211B, a light-emitting element 211G, and a light-receiving / light-emitting element 213R. The light-receiving / light-emitting element 213R functions as a light-emitting element that emits red (R) light and as a photoelectric conversion element that receives visible light. Fig. 24A shows an example in which the light-receiving / light-emitting element 213R receives green (G) light emitted by the light-emitting element 211G. The light-receiving / light-emitting element 213R may also receive blue (B) light emitted by the light-emitting element 211B. The light-receiving / light-emitting element 213R may also receive both green light and blue light.

[0392] For example, it is preferable that the light receiving / emitting element 213R receives light with a shorter wavelength than the light it emits. Alternatively, the light receiving / emitting element 213R may be configured to receive light with a longer wavelength than the light it emits (e.g., infrared light). The light receiving / emitting element 213R may be configured to receive light with a wavelength similar to the light it emits, but in that case, it may also receive the light it emits, which could reduce the light emission efficiency. Therefore, it is preferable that the light receiving / emitting element 213R is configured so that the peak of the emission spectrum and the peak of the absorption spectrum do not overlap as much as possible.

[0393] In addition, the light emitted by the light emitting / receiving element is not limited to red light. Furthermore, the light emitted by the light emitting element is not limited to a combination of green light and blue light. For example, the light emitting / receiving element may be an element that emits green or blue light and receives light of a wavelength different from the light it emits.

[0394] In this way, by having the light emitting / receiving element 213R function as both a light emitting element and a light receiving element, the number of elements arranged in one pixel can be reduced, which makes it easier to achieve higher definition, a higher aperture ratio, and higher resolution.

[0395] 24B to 24I show an example of a pixel that can be applied to the display panel 200B.

[0396] Fig. 24B shows an example in which the light emitting / receiving element 213R, the light emitting element 211G, and the light emitting element 211B are arranged in a row. Fig. 24C shows an example in which the light emitting element 211G and the light emitting element 211B are arranged alternately in the vertical direction, and the light emitting / receiving element 213R is arranged next to them.

[0397] FIG. 24D shows an example in which three light-emitting elements (light-emitting element 211G, light-emitting element 211B, and light-emitting element 211X) and one light-receiving / light-emitting element are arranged in a 2×2 matrix. The light-emitting element 211X is an element that emits light other than R, G, and B. Examples of light other than R, G, and B include white (W), yellow (Y), cyan (C), magenta (M), infrared light (IR), and ultraviolet light (UV). When the light-emitting element 211X emits infrared light, it is preferable that the light-receiving / light-emitting element have a function to detect infrared light or a function to detect both visible light and infrared light. The wavelength of light detected by the light-receiving / light-emitting element can be determined depending on the application of the sensor.

[0398] FIG. 24E shows two pixels. An area including three elements surrounded by dotted lines corresponds to one pixel. Each pixel has a light-emitting element 211G, a light-emitting element 211B, and an optical element 213R. In the left pixel shown in FIG. 24E, the light-emitting element 211G is arranged in the same row as the optical element 213R, and the light-emitting element 211B is arranged in the same column as the optical element 213R. In the right pixel shown in FIG. 24E, the light-emitting element 211G is arranged in the same row as the optical element 213R, and the light-emitting element 211B is arranged in the same column as the optical element 211G. In the pixel layout shown in FIG. 24E, the optical element 213R, the light-emitting element 211G, and the light-emitting element 211B are arranged repeatedly in both odd and even rows, and in each column, optical elements or optical elements of different colors are arranged in the odd and even rows.

[0399] Figure 24F shows four pixels to which a Pentile arrangement is applied, with two adjacent pixels having light-emitting or light-receiving elements that emit light of two different colors. Note that Figure 24F shows the top view of the light-emitting or light-receiving element.

[0400] The upper left pixel and the lower right pixel shown in Fig. 24F have a light emitting / receiving element 213R and a light emitting element 211G. The upper right pixel and the lower left pixel have a light emitting element 211G and a light emitting element 211B. That is, in the example shown in Fig. 24F, a light emitting element 211G is provided in each pixel.

[0401] The top surface shapes of the light-emitting element and the light-receiving / light-emitting element are not particularly limited and may be circular, elliptical, polygonal, polygonal with rounded corners, etc. Figure 24F etc. shows an example in which the top surface shapes of the light-emitting element and the light-receiving / light-emitting element are squares (diamonds) tilted at approximately 45 degrees. Note that the top surface shapes of the light-emitting element and the light-receiving / light-emitting element for each color may be different from each other, or may be the same for some or all of the colors.

[0402] In addition, the sizes of the light-emitting regions (or light-receiving regions) of the light-emitting elements and light-receiving / light-emitting elements of each color may be different from each other, or may be the same for some or all of the colors. For example, in Figure 24F, the area of ​​the light-emitting region of the light-emitting element 211G provided in each pixel may be smaller than the light-emitting regions (or light-receiving / light-emitting regions) of the other elements.

[0403] Fig. 24G is a modified example of the pixel array shown in Fig. 24F. Specifically, the configuration of Fig. 24G is obtained by rotating the configuration of Fig. 24F by 45 degrees. Although Fig. 24F has been described as having two elements per pixel, it can also be understood that one pixel is made up of four elements, as shown in Fig. 24G.

[0404] Fig. 24H is a modified example of the pixel array shown in Fig. 24F. The upper left pixel and lower right pixel shown in Fig. 24H have light-emitting / receiving elements 213R and light-emitting elements 211G. The upper right pixel and lower left pixel have light-emitting / receiving elements 213R and light-emitting elements 211B. That is, in the example shown in Fig. 24H, each pixel is provided with a light-emitting / receiving element 213R. Because each pixel is provided with a light-emitting / receiving element 213R, the configuration shown in Fig. 24H can capture images with higher resolution than the configuration shown in Fig. 24F. This can improve the accuracy of biometric authentication, for example.

[0405] FIG. 24I is a modified example of the pixel array shown in FIG. 24H, and is obtained by rotating the pixel array by 45 degrees.

[0406] In FIG. 24I, one pixel is assumed to be composed of four elements (two light-emitting elements and two light-receiving and light-emitting elements). In this way, one pixel can capture images with high resolution by including multiple light-receiving and light-emitting elements with light-receiving capabilities. This improves the accuracy of biometric authentication. For example, the image resolution can be set to the root double of the display resolution.

[0407] A display device to which the configuration shown in Figure 24H or 24I is applied has p (p is an integer of 2 or more) first light-emitting elements, q (q is an integer of 2 or more) second light-emitting elements, and r (r is an integer greater than p and greater than q) light-receiving and light-emitting elements. p and r satisfy r = 2p. Furthermore, p, q, and r satisfy r = p + q. One of the first light-emitting elements and the second light-emitting element emits green light, and the other emits blue light. The light-receiving and light-emitting element emits red light and has a light-receiving function.

[0408] For example, when detecting a touch operation using a light-emitting / receiving element, it is preferable that the light emitted from the light source is less visible to the user. Because blue light is less visible than green light, it is preferable that a light-emitting element that emits blue light be used as the light source. Therefore, it is preferable that the light-emitting / receiving element has a function of receiving blue light. However, this is not limited to this, and the light-emitting element used as the light source can be appropriately selected depending on the sensitivity of the light-emitting / receiving element.

[0409] As described above, pixels with various arrangements can be applied to the display device of this embodiment mode.

[0410] This embodiment mode can be implemented by appropriately combining at least a part thereof with other embodiment modes described in this specification.

[0411] Embodiment 4 In this embodiment, a light-emitting element (also referred to as a light-emitting device) and a light-receiving element (also referred to as a light-receiving device) that can be used for a light-emitting and receiving device that is one embodiment of the present invention will be described.

[0412] In this specification, etc., a device fabricated using a metal mask or an FMM (fine metal mask, high-resolution metal mask) may be referred to as a device with an MM (metal mask) structure. Also, in this specification, etc., a device fabricated without using a metal mask or an FMM may be referred to as a device with an MML (metal maskless) structure.

[0413] In this specification and the like, a structure in which different light-emitting layers are formed or different light-emitting layers are painted for each color light-emitting device (here, blue (B), green (G), and red (R)) may be referred to as an SBS (Side By Side) structure. In this specification and the like, a light-emitting device that can emit white light may be referred to as a white light-emitting device. In addition, a white light-emitting device can be combined with a colored layer (for example, a color filter) to form a full-color display device.

[0414] Light-emitting devices can be broadly divided into single structures and tandem structures. A single-structure device has one light-emitting unit between a pair of electrodes, and the light-emitting unit preferably includes one or more light-emitting layers. To obtain white light emission with a single structure, light-emitting layers can be selected that can produce achromatic colors through the emission of each of two or more light-emitting layers. For example, in the case of a two-color device, a configuration in which the light emitted by the first light-emitting layer and the light emitted by the second light-emitting layer are complementary colors can be obtained, resulting in a white light emission configuration for the entire light-emitting device. The same applies to light-emitting devices having three or more light-emitting layers.

[0415] A tandem-structure device preferably has two or more light-emitting units between a pair of electrodes, with each light-emitting unit preferably including one or more light-emitting layers. By using light-emitting layers that emit light of the same color in each light-emitting unit, the luminance per given current can be increased, and the device can be made more reliable than a single-structure light-emitting device. To obtain white light emission in a tandem structure, the device can be configured to combine light from the light-emitting layers of multiple light-emitting units to obtain white light. The combination of light-emitting colors that can produce white light is the same as in the single-structure configuration. In a tandem-structure device, it is preferable to provide an intermediate layer, such as a charge-generating layer, between the multiple light-emitting units.

[0416] Furthermore, when comparing the above-described white light-emitting device (single structure or tandem structure) with a light-emitting device having an SBS structure, the light-emitting device having an SBS structure can reduce power consumption compared to the white light-emitting device. If it is desired to reduce power consumption, it is preferable to use a light-emitting device having an SBS structure. On the other hand, the manufacturing process of a white light-emitting device is simpler than that of a light-emitting device having an SBS structure, and therefore the manufacturing cost can be reduced or the manufacturing yield can be increased, making it preferable.

[0417] [Device Structure] Next, detailed structures of a light-emitting element, a light-receiving element, and a light-emitting and light-emitting element that can be used in the display device of one embodiment of the present invention will be described.

[0418] The display device of one embodiment of the present invention may be any of a top emission type that emits light in a direction opposite to a substrate on which a light-emitting element is formed, a bottom emission type that emits light toward a substrate on which a light-emitting element is formed, and a dual emission type that emits light to both sides.

[0419] In this embodiment, a top-emission display device will be described as an example.

[0420] In this specification and the like, unless otherwise specified, even when describing a configuration having a plurality of elements (e.g., light-emitting elements, light-emitting layers), when describing matters common to each element, the alphabet will be omitted. For example, when describing matters common to light-emitting layer 383R and light-emitting layer 383G, etc., they may be referred to as light-emitting layer 383.

[0421] The display device 380A shown in Figure 25A has a light receiving element 370PD, a light emitting element 370R that emits red (R) light, a light emitting element 370G that emits green (G) light, and a light emitting element 370B that emits blue (B) light.

[0422] Each light-emitting element has a pixel electrode 371, a hole injection layer 381, a hole transport layer 382, ​​a light-emitting layer, an electron transport layer 384, an electron injection layer 385, and a common electrode 375 stacked in this order. The light-emitting element 370R has a light-emitting layer 383R, the light-emitting element 370G has a light-emitting layer 383G, and the light-emitting element 370B has a light-emitting layer 383B. The light-emitting layer 383R contains a light-emitting material that emits red light, the light-emitting layer 383G contains a light-emitting material that emits green light, and the light-emitting layer 383B contains a light-emitting material that emits blue light.

[0423] The light emitting element is an electroluminescent element that emits light toward the common electrode 375 when a voltage is applied between the pixel electrode 371 and the common electrode 375 .

[0424] The light receiving element 370PD has a pixel electrode 371, a hole injection layer 381, a hole transport layer 382, ​​an active layer 373, an electron transport layer 384, an electron injection layer 385, and a common electrode 375 stacked in this order.

[0425] The light receiving element 370PD is a photoelectric conversion element that receives light incident from outside the display device 380A and converts it into an electrical signal.

[0426] In this embodiment, in both the light-emitting element and the light-receiving element, the pixel electrode 371 functions as an anode and the common electrode 375 functions as a cathode. In other words, the light-receiving element is driven by applying a reverse bias between the pixel electrode 371 and the common electrode 375, so that the light incident on the light-receiving element can be detected, an electric charge can be generated, and the electric charge can be extracted as a current.

[0427] In the display device of this embodiment, an organic compound is used for the active layer 373 of the light-receiving element 370PD. The layers of the light-receiving element 370PD other than the active layer 373 can be configured in common with the light-emitting element. Therefore, by simply adding a step of forming the active layer 373 to the manufacturing process of the light-emitting element, the light-receiving element 370PD can be formed in parallel with the formation of the light-emitting element. Furthermore, the light-emitting element and the light-receiving element 370PD can be formed on the same substrate. Therefore, the light-receiving element 370PD can be built into the display device without significantly increasing the number of manufacturing steps.

[0428] The display device 380A shows an example in which the light receiving element 370PD and the light emitting element have a common configuration, except that the active layer 373 of the light receiving element 370PD and the light emitting layer 383 of the light emitting element are fabricated separately. However, the configuration of the light receiving element 370PD and the light emitting element is not limited to this. The light receiving element 370PD and the light emitting element may have layers fabricated separately from each other, in addition to the active layer 373 and the light emitting layer 383. It is preferable that the light receiving element 370PD and the light emitting element have one or more layers used in common (common layers). This allows the light receiving element 370PD to be incorporated into the display device without significantly increasing the number of manufacturing steps.

[0429] A conductive film that transmits visible light is used for the electrode from which light is extracted, either the pixel electrode 371 or the common electrode 375. It is preferable to use a conductive film that reflects visible light for the electrode from which light is not extracted.

[0430] The light-emitting element included in the display device of this embodiment preferably has a micro-optical resonator (microcavity) structure. Therefore, one of a pair of electrodes included in the light-emitting element preferably has an electrode that is transparent and reflective to visible light (semi-transmissive / semi-reflective electrode), and the other preferably has an electrode that is reflective to visible light (reflective electrode). When the light-emitting element has a microcavity structure, light emitted from the light-emitting layer can be resonated between both electrodes, thereby intensifying the light emitted from the light-emitting element.

[0431] The semi-transmitting / semi-reflective electrode can have a laminated structure of a reflective electrode and an electrode that is transparent to visible light (also called a transparent electrode).

[0432] The light transmittance of the transparent electrode is 40% or more. For example, it is preferable to use an electrode with a visible light (light with a wavelength of 400 nm or more and less than 750 nm) transmittance of 40% or more for the light emitting element. The visible light reflectance of the semi-transmissive / semi-reflective electrode is 10% or more and 95% or less, preferably 30% or more and 80% or less. The visible light reflectance of the reflective electrode is 40% or more and 100% or less, preferably 70% or more and 100% or less. The resistivity of these electrodes is 1×10 −２ When the light-emitting element emits near-infrared light (light having a wavelength of 750 nm or more and 1300 nm or less), the transmittance or reflectance of these electrodes for near-infrared light preferably satisfies the above-mentioned numerical range, similar to the transmittance or reflectance for visible light.

[0433] The light-emitting element has at least a light-emitting layer 383. The light-emitting element may further have, in addition to the light-emitting layer 383, a layer containing a substance with high hole-injection properties, a substance with high hole-transport properties, a hole-blocking material, a substance with high electron-transport properties, a substance with high electron-injection properties, an electron-blocking material, a bipolar substance (a substance with high electron-transport properties and high hole-transport properties), or the like.

[0434] For example, the light-emitting element and the light-receiving element may have one or more layers of the hole injection layer, hole transport layer, electron transport layer, and electron injection layer in common, or the light-emitting element and the light-receiving element may have one or more layers of the hole injection layer, hole transport layer, electron transport layer, and electron injection layer formed differently from each other.

[0435] The hole injection layer is a layer that injects holes from the anode into the hole transport layer and contains a material with high hole injection properties, such as an aromatic amine compound or a composite material containing a hole transport material and an acceptor material (electron acceptor material).

[0436] In a light-emitting element, the hole transport layer is a layer that transports holes injected from the anode by the hole injection layer to the light-emitting layer. In a light-receiving element, the hole transport layer is a layer that transports holes generated in the active layer based on incident light to the anode. The hole transport layer is a layer that contains a hole transport material. The hole transport material is a material having a concentration of 1×10 −６ cm ２ A substance having a hole mobility of 1 / Vs or more is preferred. Note that other substances can also be used as long as they have a higher hole transporting property than electron transporting property. As the hole transporting material, a material having a high hole transporting property, such as a π-electron-rich heteroaromatic compound (e.g., a carbazole derivative, a thiophene derivative, a furan derivative, etc.) or an aromatic amine (a compound having an aromatic amine skeleton), is preferred.

[0437] In a light-emitting element, the electron transport layer is a layer that transports electrons injected from the cathode by the electron injection layer to the light-emitting layer. In a light-receiving element, the electron transport layer is a layer that transports electrons generated in the active layer based on incident light to the cathode. The electron transport layer is a layer that contains an electron transporting material. The electron transporting material is a material having a 1×10 −６ cm ２ A substance having an electron mobility of 1 / Vs or more is preferred. Note that other substances can also be used as long as they have a higher electron transporting property than holes. Examples of electron-transporting materials that can be used include metal complexes having a quinoline skeleton, metal complexes having a benzoquinoline skeleton, metal complexes having an oxazole skeleton, and metal complexes having a thiazole skeleton, as well as oxadiazole derivatives, triazole derivatives, imidazole derivatives, oxazole derivatives, thiazole derivatives, phenanthroline derivatives, quinoline derivatives having a quinoline ligand, benzoquinoline derivatives, quinoxaline derivatives, dibenzoquinoxaline derivatives, pyridine derivatives, bipyridine derivatives, pyrimidine derivatives, and other π-electron-deficient heteroaromatic compounds including nitrogen-containing heteroaromatic compounds.

[0438] The electron injection layer is a layer that injects electrons from the cathode to the electron transport layer and contains a material with high electron injection properties. Examples of the material with high electron injection properties include alkali metals, alkaline earth metals, and compounds thereof. Examples of the material with high electron injection properties include a composite material containing an electron transport material and a donor material (electron donor material).

[0439] The light-emitting layer 383 is a layer containing a light-emitting substance. The light-emitting layer 383 can contain one or more light-emitting substances. As the light-emitting substance, a substance that emits light of a color such as blue, purple, blue-purple, green, yellow-green, yellow, orange, or red is appropriately used. Furthermore, a substance that emits near-infrared light can also be used as the light-emitting substance.

[0440] Examples of the light-emitting material include fluorescent materials, phosphorescent materials, TADF materials, and quantum dot materials.

[0441] Examples of fluorescent materials include pyrene derivatives, anthracene derivatives, triphenylene derivatives, fluorene derivatives, carbazole derivatives, dibenzothiophene derivatives, dibenzofuran derivatives, dibenzoquinoxaline derivatives, quinoxaline derivatives, pyridine derivatives, pyrimidine derivatives, phenanthrene derivatives, and naphthalene derivatives.

[0442] Examples of phosphorescent materials include organometallic complexes (particularly iridium complexes) having a 4H-triazole skeleton, a 1H-triazole skeleton, an imidazole skeleton, a pyrimidine skeleton, a pyrazine skeleton, or a pyridine skeleton; organometallic complexes (particularly iridium complexes) having a phenylpyridine derivative having an electron-withdrawing group as a ligand; platinum complexes; and rare earth metal complexes.

[0443] The light-emitting layer 383 may contain one or more organic compounds (host materials, assist materials, etc.) in addition to a light-emitting substance (guest material). One or both of a hole-transporting material and an electron-transporting material may be used as the one or more organic compounds. Furthermore, a bipolar material or a TADF material may be used as the one or more organic compounds.

[0444] The light-emitting layer 383 preferably includes, for example, a phosphorescent material and a hole-transporting material and an electron-transporting material, which are a combination that easily forms an exciplex. With this structure, light emission can be efficiently obtained using Exciplex-Triple Energy Transfer (ExTET), which is energy transfer from an exciplex to a light-emitting substance (phosphorescent material). By selecting a combination that forms an exciplex that emits light that overlaps with the wavelength of the lowest-energy absorption band of the light-emitting substance, energy transfer becomes smooth, allowing light emission to be obtained efficiently. With this structure, high efficiency, low-voltage operation, and a long lifetime of the light-emitting element can be simultaneously achieved.

[0445] As a combination of materials that form an exciplex, it is preferable that the HOMO level (highest occupied molecular orbital level) of the hole transporting material is equal to or higher than the HOMO level of the electron transporting material. It is also preferable that the LUMO level (lowest unoccupied molecular orbital level) of the hole transporting material is equal to or higher than the LUMO level of the electron transporting material. The LUMO level and HOMO level of the material can be derived from the electrochemical properties (reduction potential and oxidation potential) of the material measured by cyclic voltammetry (CV).

[0446] The formation of exciplexes can be confirmed, for example, by comparing the emission spectra of the hole-transporting material, the electron-transporting material, and a mixed film obtained by mixing these materials, and observing the phenomenon in which the emission spectrum of the mixed film is shifted to longer wavelengths than the emission spectra of each material (or has a new peak on the longer wavelength side). Alternatively, it can be confirmed by comparing the transient photoluminescence (PL) of the hole-transporting material, the transient PL of the electron-transporting material, and a mixed film obtained by mixing these materials, and observing differences in transient response, such as the transient PL lifetime of the mixed film having a longer-lifetime component or a larger proportion of delayed components than the transient PL lifetimes of the individual materials. The above-mentioned transient PL may also be interpreted as transient electroluminescence (EL). That is, the formation of exciplexes can also be confirmed by comparing the transient EL of the hole-transporting material, the transient EL of the electron-transporting material, and a mixed film obtained by mixing these materials, and observing the differences in transient response.

[0447] The active layer 373 includes a semiconductor. Examples of the semiconductor include an inorganic semiconductor such as silicon and an organic semiconductor including an organic compound. In this embodiment, an example in which an organic semiconductor is used as the semiconductor included in the active layer 373 is shown. By using an organic semiconductor, the light-emitting layer 383 and the active layer 373 can be formed by the same method (for example, vacuum deposition), which is preferable because a common manufacturing device can be used.

[0448] The active layer 373 has an n-type semiconductor material, such as fullerene (e.g., C ６０ , C ７０ Examples of electron-accepting organic semiconductor materials include fullerene derivatives and the like. Fullerenes have a soccer ball-like shape, and this shape is energetically stable. Fullerenes have deep (low) HOMO and LUMO levels. Because fullerenes have a deep LUMO level, they have extremely high electron-accepting (acceptor) properties. Normally, when π-electron conjugation (resonance) spreads on a plane, as in benzene, electron-donating (donor) properties increase, but fullerenes have a spherical shape, so they have high electron-accepting properties despite the wide spread π-electron conjugation. High electron-accepting properties cause charge separation quickly and efficiently, making them useful as light-receiving elements. C ６０ , C ７０ Both have a wide absorption band in the visible light region, and C ７０ is C ６０ Other fullerene derivatives include [6,6]-Phenyl-C71-butylic acid methyl ester (abbreviation: PC70BM), [6,6]-Phenyl-C61-butylic acid methyl ester (abbreviation: PC60BM), and 1',1",4',4"-Tetrahydro-di[1,4]methanenaphthaleno[1,2:2',3',56,60:2",3"][5,6]fullerene-C60 (abbreviation: ICBA).

[0449] Furthermore, examples of materials for n-type semiconductors include perylene tetracarboxylic acid derivatives such as N,N'-dimethyl-3,4,9,10-perylene tetracarboxylic acid diimide (abbreviation: Me-PTCDI).

[0450] An example of an n-type semiconductor material is 2,2'-(5,5'-(thieno[3,2-b]thiophene-2,5-diyl)bis(thiophene-5,2-diyl))bis(methane-1-yl-1-ylidene)dimalononitrile (abbreviation: FT2TDMN).

[0451] Examples of n-type semiconductor materials include metal complexes having a quinoline skeleton, metal complexes having a benzoquinoline skeleton, metal complexes having an oxazole skeleton, metal complexes having a thiazole skeleton, oxadiazole derivatives, triazole derivatives, imidazole derivatives, oxazole derivatives, thiazole derivatives, phenanthroline derivatives, quinoline derivatives, benzoquinoline derivatives, quinoxaline derivatives, dibenzoquinoxaline derivatives, pyridine derivatives, bipyridine derivatives, pyrimidine derivatives, naphthalene derivatives, anthracene derivatives, coumarin derivatives, rhodamine derivatives, triazine derivatives, and quinone derivatives.

[0452] Examples of the p-type semiconductor material of the active layer 373 include electron-donating organic semiconductor materials such as copper(II) phthalocyanine (CuPc), tetraphenyldibenzoperiflanthene (DBP), zinc phthalocyanine (ZnPc), tin phthalocyanine (SnPc), quinacridone, and rubrene.

[0453] Examples of p-type semiconductor materials include carbazole derivatives, thiophene derivatives, furan derivatives, compounds having an aromatic amine skeleton, etc. Examples of p-type semiconductor materials include naphthalene derivatives, anthracene derivatives, pyrene derivatives, triphenylene derivatives, fluorene derivatives, pyrrole derivatives, benzofuran derivatives, benzothiophene derivatives, indole derivatives, dibenzofuran derivatives, dibenzothiophene derivatives, indolocarbazole derivatives, porphyrin derivatives, phthalocyanine derivatives, naphthalocyanine derivatives, quinacridone derivatives, rubrene derivatives, tetracene derivatives, polyphenylenevinylene derivatives, polyparaphenylene derivatives, polyfluorene derivatives, polyvinylcarbazole derivatives, polythiophene derivatives, etc.

[0454] The HOMO level of the electron-donating organic semiconductor material is preferably shallower (higher) than the HOMO level of the electron-accepting organic semiconductor material, and the LUMO level of the electron-donating organic semiconductor material is preferably shallower (higher) than the LUMO level of the electron-accepting organic semiconductor material.

[0455] It is preferable to use a spherical fullerene as the electron-accepting organic semiconductor material and a planar organic semiconductor material as the electron-donating organic semiconductor material. Molecules with similar shapes tend to aggregate together, and when molecules of the same type aggregate, the energy levels of their molecular orbitals become close, which can improve carrier transport properties.

[0456] For example, the active layer 373 is preferably formed by co-evaporating an n-type semiconductor and a p-type semiconductor, or may be formed by laminating an n-type semiconductor and a p-type semiconductor.

[0457] The light-emitting element and the light-receiving element can be made of either a low-molecular-weight compound or a high-molecular-weight compound, and may contain an inorganic compound. The layers constituting the light-emitting element and the light-receiving element can be formed by a method such as a vapor deposition method (including a vacuum vapor deposition method), a transfer method, a printing method, an inkjet method, or a coating method.

[0458] For example, the hole transport material or electron blocking material may be a polymer compound such as poly(3,4-ethylenedioxythiophene) / poly(styrenesulfonic acid) (PEDOT / PSS), or an inorganic compound such as molybdenum oxide or copper iodide (CuI). The electron transport material or hole blocking material may be an inorganic compound such as zinc oxide (ZnO), or an organic compound such as polyethyleneimine ethoxylate (PEIE). The light-receiving device may have, for example, a mixed film of PEIE and ZnO.

[0459] Furthermore, a polymer compound such as Poly[[4,8-bis[5-(2-ethylhexyl)-2-thienyl]benzo[1,2-b:4,5-b′]dithiophene-2,6-diyl]-2,5-thiophenediyl[5,7-bis(2-ethylhexyl)-4,8-dioxo-4H,8H-benzo[1,2-c:4,5-c′]dithiophene-1,3-diyl]] polymer (abbreviation: PBDB-T) or a PBDB-T derivative, which functions as a donor, can be used for the active layer 373. For example, a method of dispersing an acceptor material in PBDB-T or a PBDB-T derivative can be used.

[0460] A display device 380B shown in FIG. 25B differs from the display device 380A in that a light receiving element 370PD and a light emitting element 370R have the same configuration.

[0461] The light receiving element 370PD and the light emitting element 370R have in common an active layer 373 and a light emitting layer 383R.

[0462] Here, it is preferable that the light receiving element 370PD has the same configuration as a light emitting element that emits light of a longer wavelength than the light to be detected. For example, the light receiving element 370PD configured to detect blue light can have the same configuration as one or both of the light emitting element 370R and the light emitting element 370G. For example, the light receiving element 370PD configured to detect green light can have the same configuration as the light emitting element 370R.

[0463] By using a common structure for the light-receiving element 370PD and the light-emitting element 370R, the number of film-forming steps and the number of masks can be reduced compared to a structure in which the light-receiving element 370PD and the light-emitting element 370R have separate layers, thereby reducing the manufacturing steps and manufacturing costs of the display device.

[0464] Furthermore, by using a common configuration for the light receiving element 370PD and the light emitting element 370R, the margin for misalignment can be narrowed compared to a configuration in which the light receiving element 370PD and the light emitting element 370R have separate layers. This allows the pixel aperture ratio to be increased, and the light extraction efficiency of the display device to be improved. This also allows the life of the light emitting element to be extended. Furthermore, the display device can display high brightness. Furthermore, it is possible to increase the resolution of the display device.

[0465] The light-emitting layer 383R includes a light-emitting material that emits red light. The active layer 373 includes an organic compound that absorbs light with a wavelength shorter than red (for example, one or both of green light and blue light). The active layer 373 preferably includes an organic compound that does not easily absorb red light and that absorbs light with a wavelength shorter than red. This allows the light-emitting element 370R to efficiently extract red light, and the light-receiving element 370PD to detect light with a wavelength shorter than red with high accuracy.

[0466] Furthermore, in the display device 380B, an example is shown in which the light emitting element 370R and the light receiving element 370PD have the same configuration, but the light emitting element 370R and the light receiving element 370PD may have optical adjustment layers of different thicknesses.

[0467] 26A and 26B includes a light receiving / emitting element 370SR that emits red (R) light and has a light receiving function, a light emitting element 370G, and a light emitting element 370B. The configuration of the light emitting element 370G and the light emitting element 370B can be based on the configuration of the display device 380A described above.

[0468] The light emitting / receiving element 370SR has a pixel electrode 371, a hole injection layer 381, a hole transport layer 382, ​​an active layer 373, a light emitting layer 383R, an electron transport layer 384, an electron injection layer 385, and a common electrode 375 stacked in this order. The light emitting / receiving element 370SR has the same configuration as the light emitting element 370R and the light receiving element 370PD exemplified in the display device 380B.

[0469] 26A shows a case where the light emitting / receiving element 370SR functions as a light emitting element. In FIG. 26A, an example is shown in which the light emitting element 370B emits blue light, the light emitting element 370G emits green light, and the light emitting / receiving element 370SR emits red light.

[0470] 26B shows a case where the light receiving / emitting element 370SR functions as a light receiving element, in which the light receiving / emitting element 370SR receives blue light emitted by the light emitting element 370B and green light emitted by the light emitting element 370G.

[0471] The light emitting element 370B, the light emitting element 370G, and the light emitting / receiving element 370SR each have a pixel electrode 371 and a common electrode 375. In this embodiment, a case will be described in which the pixel electrode 371 functions as an anode and the common electrode 375 functions as a cathode. The light emitting / receiving element 370SR is driven by applying a reverse bias between the pixel electrode 371 and the common electrode 375, so that the light emitting / receiving element 370SR can detect light incident on the light emitting / receiving element 370SR, generate electric charges, and extract the charges as a current.

[0472] The light-emitting / receiving element 370SR can be said to have a configuration in which an active layer 373 is added to a light-emitting element. In other words, the light-emitting / receiving element 370SR can be formed in parallel with the formation of the light-emitting element by simply adding a process for forming the active layer 373 to the manufacturing process of the light-emitting element. Furthermore, the light-emitting element and the light-emitting / receiving element can be formed on the same substrate. Therefore, it is possible to provide the display unit with either or both of an imaging function and a sensing function without significantly increasing the number of manufacturing processes.

[0473] There are no limitations on the stacking order of the light-emitting layer 383R and the active layer 373. Figures 26A and 26B show an example in which the active layer 373 is provided on the hole-transport layer 382, ​​and the light-emitting layer 383R is provided on the active layer 373. The stacking order of the light-emitting layer 383R and the active layer 373 may be reversed.

[0474] Furthermore, the light emitting / receiving element may not have at least one layer selected from the hole injection layer 381, the hole transport layer 382, ​​the electron transport layer 384, and the electron injection layer 385. Furthermore, the light emitting / receiving element may have other functional layers such as a hole blocking layer and an electron blocking layer.

[0475] In the light emitting / receiving element, a conductive film that transmits visible light is used for the electrode on the light extraction side, and a conductive film that reflects visible light is preferably used for the electrode on the non-light extraction side.

[0476] The functions and materials of the layers constituting the light emitting / receiving element are similar to those of the layers constituting the light emitting element and the light receiving element, and therefore detailed description thereof will be omitted.

[0477] 26C to 26G show examples of the stacked structure of the light emitting and receiving element.

[0478] The light emitting / receiving element shown in FIG. 26C has a first electrode 377 , a hole injection layer 381 , a hole transport layer 382 , a light emitting layer 383R, an active layer 373 , an electron transport layer 384 , an electron injection layer 385 , and a second electrode 378 .

[0479] FIG. 26C shows an example in which a light-emitting layer 383R is provided on a hole-transporting layer 382, ​​and an active layer 373 is stacked on the light-emitting layer 383R.

[0480] As shown in FIGS. 26A to 26C, the active layer 373 and the light-emitting layer 383R may be in contact with each other.

[0481] A buffer layer is preferably provided between the active layer 373 and the light-emitting layer 383R. In this case, the buffer layer preferably has hole-transporting and electron-transporting properties. For example, a bipolar substance is preferably used for the buffer layer. Alternatively, at least one layer selected from a hole-injection layer, a hole-transport layer, an electron-transport layer, an electron-injection layer, a hole-blocking layer, and an electron-blocking layer can be used as the buffer layer. Figure 26D shows an example in which a hole-transporting layer 382 is used as the buffer layer.

[0482] By providing a buffer layer between the active layer 373 and the light-emitting layer 383R, it is possible to suppress the transfer of excitation energy from the light-emitting layer 383R to the active layer 373. The buffer layer can also be used to adjust the optical path length (cavity length) of the microcavity structure. Therefore, a light-emitting / receiving element having a buffer layer between the active layer 373 and the light-emitting layer 383R can achieve high light-emitting efficiency.

[0483] 26E shows an example of a laminated structure in which a hole transport layer 382-1, an active layer 373, a hole transport layer 382-2, and a light-emitting layer 383R are laminated in this order on a hole injection layer 381. The hole transport layer 382-2 functions as a buffer layer. The hole transport layer 382-1 and the hole transport layer 381-2 may contain the same material or different materials. Alternatively, a layer that can be used as the buffer layer described above may be used instead of the hole transport layer 381-2. Alternatively, the positions of the active layer 373 and the light-emitting layer 383R may be interchanged.

[0484] 26F differs from the light-emitting / receiving element shown in Fig. 26A in that it does not have the hole transport layer 382. In this way, the light-emitting / receiving element may not have at least one layer among the hole injection layer 381, the hole transport layer 382, ​​the electron transport layer 384, and the electron injection layer 385. The light-emitting / receiving element may also have other functional layers such as a hole blocking layer and an electron blocking layer.

[0485] The light emitting / receiving device shown in FIG. 26G differs from the light emitting / receiving device shown in FIG. 26A in that it does not have an active layer 373 and a light emitting layer 383R, but has a layer 389 that serves as both a light emitting layer and an active layer.

[0486] As a layer that serves as both a light-emitting layer and an active layer, for example, a layer containing three materials: an n-type semiconductor that can be used for the active layer 373, a p-type semiconductor that can be used for the active layer 373, and a light-emitting substance that can be used for the light-emitting layer 383R can be used.

[0487] It is preferable that the lowest energy absorption band in the absorption spectrum of the mixed material of n-type and p-type semiconductors does not overlap with the maximum peak in the emission spectrum (PL spectrum) of the luminescent substance, and it is more preferable that they are sufficiently separated from each other.

[0488] Embodiment 5 In this embodiment, an example of a display device including a light-receiving device or the like according to one embodiment of the present invention will be described.

[0489] In the display device of this embodiment, a pixel may be configured to have multiple types of subpixels having light-emitting devices that emit light of different colors. For example, a pixel may be configured to have three types of subpixels. Examples of the three subpixels include subpixels of red (R), green (G), and blue (B), or subpixels of yellow (Y), cyan (C), and magenta (M). Alternatively, a pixel may be configured to have four types of subpixels. Examples of the four subpixels include subpixels of R, G, B, and white (W), or subpixels of R, G, B, and Y.

[0490] The arrangement of the sub-pixels is not particularly limited, and various methods can be applied, such as a stripe arrangement, an S-stripe arrangement, a matrix arrangement, a delta arrangement, a Bayer arrangement, and a pentile arrangement.

[0491] Examples of the top surface shape of the sub-pixel include a triangle, a quadrangle (including a rectangle and a square), a polygon such as a pentagon, a polygon with rounded corners, an ellipse, a circle, etc. The top surface shape of the sub-pixel here corresponds to the top surface shape of the light-emitting region of the light-emitting device.

[0492] In a display device having a light-emitting device and a light-receiving device in each pixel, the pixel has a light-receiving function, so that it is possible to detect contact or proximity of an object while displaying an image. For example, in addition to displaying an image using all of the sub-pixels of the display device, some of the sub-pixels can emit light as a light source and the remaining sub-pixels can display an image.

[0493] The pixel shown in FIGS. 27A, 27B, and 27C includes subpixels G, B, R, and PS.

[0494] The pixels shown in Fig. 27A are arranged in a stripe pattern, while the pixels shown in Fig. 27B are arranged in a matrix pattern.

[0495] The pixel array shown in FIG. 27C has a configuration in which three subpixels (subpixel R, subpixel G, and subpixel S) are vertically arranged next to one subpixel (subpixel B).

[0496] The pixel shown in FIGS. 27D, 27E, and 27F has subpixels G, B, R, IR, and PS.

[0497] 27D, 27E, and 27F show examples in which one pixel is provided across two rows, with the upper row (first row) having three subpixels (subpixels G, B, and R), and the lower row (second row) having two subpixels (one subpixel PS and one subpixel IR).

[0498] In Figure 27D, three vertically elongated subpixels G, B, and R are arranged horizontally, with a subpixel PS and a horizontally elongated subpixel IR arranged horizontally below them. In Figure 27E, two horizontally elongated subpixels G and R are arranged vertically, with a vertically elongated subpixel B arranged horizontally next to them, and a horizontally elongated subpixel IR and a vertically elongated subpixel PS arranged horizontally below them. In Figure 27F, three vertically elongated subpixels R, G, and B are arranged horizontally, with a horizontally elongated subpixel IR and a vertically elongated subpixel PS arranged horizontally below them. Figures 27E and 27F show a case where the area of ​​the subpixel IR is the largest and the area of ​​the subpixel PS is approximately the same as that of the other subpixels.

[0499] The layout of the sub-pixels is not limited to the configurations shown in FIGS. 27A to 27F.

[0500] Subpixel R has a light-emitting device that emits red light. Subpixel G has a light-emitting device that emits green light. Subpixel B has a light-emitting device that emits blue light. Subpixel IR has a light-emitting device that emits infrared light. Subpixel PS has a light-receiving device. There are no particular limitations on the wavelength of light detected by subpixel PS, but it is preferable that the light-receiving device of subpixel PS is sensitive to light emitted by the light-emitting device of subpixel R, subpixel G, subpixel B, or subpixel IR. For example, it is preferable to detect one or more of light in wavelength ranges such as blue, purple, blue-purple, green, yellow-green, yellow, orange, and red, and light in the infrared wavelength range.

[0501] The light-receiving area of ​​the subpixel PS is smaller than the light-emitting area of ​​the other subpixels. The smaller the light-receiving area, the narrower the imaging range, which makes it possible to suppress blurring in the imaging result and improve resolution. Therefore, by using the subpixel PS, high-definition or high-resolution imaging can be performed. For example, the subpixel PS can be used to capture images for personal authentication using fingerprints, palm prints, irises, pulse patterns (including vein patterns and arterial patterns), faces, etc.

[0502] The subpixel PS can be used as a touch sensor (also called a direct touch sensor) or a near-touch sensor (also called a hover sensor, hover touch sensor, non-contact sensor, or touchless sensor). For example, the subpixel PS preferably detects infrared light, which enables touch detection even in dark places.

[0503] Here, the touch sensor or near-touch sensor can detect the proximity or contact of an object (such as a finger, hand, or pen). The touch sensor can detect an object when the display device and the object are in direct contact with each other. The near-touch sensor can detect an object even if the object does not touch the display device. For example, it is preferable that the display device be configured to detect the object when the distance between the display device and the object is in the range of 0.1 mm to 300 mm, preferably 3 mm to 50 mm. This configuration makes it possible to operate the display device without the object directly touching it, in other words, to operate the display device in a non-contact (touchless) manner. This configuration reduces the risk of the display device becoming dirty or scratched, or makes it possible to operate the display device without the object directly touching dirt (e.g., dust, viruses, etc.) attached to the display device.

[0504] In order to capture high-resolution images, it is preferable that the sub-pixels PS be provided in all pixels of the display device. On the other hand, when used in a touch sensor or near-touch sensor, the sub-pixels PS do not require high accuracy compared to when capturing images of fingerprints, etc., so it is sufficient that the sub-pixels PS are provided in only some of the pixels of the display device. By making the number of sub-pixels PS in the display device smaller than the number of sub-pixels R, etc., the detection speed can be increased.

[0505] FIG. 27G shows an example of a pixel circuit of a sub-pixel having a light-receiving device, and FIG. 27H shows an example of a pixel circuit of a sub-pixel having a light-emitting device.

[0506] 27G includes a light receiving device PD, a transistor M11, a transistor M12, a transistor M13, a transistor M14, and a capacitance element C2. Here, an example is shown in which a photodiode is used as the light receiving device PD.

[0507] The light-receiving device PD has an anode electrically connected to the wiring V1 and a cathode electrically connected to one of the source and drain of the transistor M11. The transistor M11 has a gate electrically connected to the wiring TX and the other of the source and drain electrically connected to one electrode of the capacitor C2, one of the source and drain of the transistor M12, and the gate of the transistor M13. The transistor M12 has a gate electrically connected to the wiring RES and the other of the source and drain electrically connected to the wiring V2. The transistor M13 has one of the source and drain electrically connected to the wiring V3 and the other of the source and drain electrically connected to one of the source and drain of the transistor M14. The transistor M14 has a gate electrically connected to the wiring SE and the other of the source and drain electrically connected to the wiring OUT1.

[0508] A constant potential is supplied to the wiring V1, the wiring V2, and the wiring V3. When the light-receiving device PD is driven with a reverse bias, a potential higher than the potential of the wiring V1 is supplied to the wiring V2. The transistor M12 is controlled by a signal supplied to the wiring RES and has a function of resetting the potential of a node connected to the gate of the transistor M13 to the potential supplied to the wiring V2. The transistor M11 is controlled by a signal supplied to the wiring TX and has a function of controlling the timing at which the potential of the node changes depending on the current flowing through the light-receiving device PD. The transistor M13 functions as an amplifying transistor that outputs according to the potential of the node. The transistor M14 is controlled by a signal supplied to the wiring SE and functions as a selection transistor that reads out an output according to the potential of the node to an external circuit connected to the wiring OUT1.

[0509] 27H includes a light-emitting device EL, transistors M15, M16, and M17, and a capacitance element C3. Here, an example is shown in which a light-emitting diode is used as the light-emitting device EL. It is particularly preferable to use an organic EL element as the light-emitting device EL.

[0510] The transistor M15 has a gate electrically connected to a wiring VG, one of its source or drain electrically connected to a wiring VS, and the other of its source or drain electrically connected to one electrode of a capacitor C3 and the gate of a transistor M16. One of the source or drain of the transistor M16 is electrically connected to a wiring V4, and the other is electrically connected to an anode of a light-emitting device EL and one of the source or drain of a transistor M17. The transistor M17 has a gate electrically connected to a wiring MS, and the other of its source or drain electrically connected to a wiring OUT2. The cathode of the light-emitting device EL is electrically connected to a wiring V5.

[0511] A constant potential is supplied to the wiring V4 and the wiring V5. The anode side of the light-emitting device EL can be set to a high potential, and the cathode side can be set to a lower potential than the anode side. The transistor M15 is controlled by a signal supplied to the wiring VG and functions as a selection transistor for controlling the selection state of the pixel circuit PIX2. The transistor M16 also functions as a drive transistor that controls the current flowing through the light-emitting device EL depending on the potential supplied to its gate. When the transistor M15 is in a conductive state, the potential supplied to the wiring VS is supplied to the gate of the transistor M16, and the light emission brightness of the light-emitting device EL can be controlled depending on the potential. The transistor M17 is controlled by a signal supplied to the wiring MS and has the function of outputting the potential between the transistor M16 and the light-emitting device EL to the outside via the wiring OUT2.

[0512] Here, it is preferable to use transistors that use a metal oxide (oxide semiconductor) in a semiconductor layer in which a channel is formed for the transistors M11, M12, M13, and M14 included in the pixel circuit PIX1, and the transistors M15, M16, and M17 included in the pixel circuit PIX2.

[0513] A transistor using a metal oxide, which has a wider band gap and a lower carrier density than silicon, can achieve an extremely small off-state current. Therefore, the small off-state current allows charge stored in a capacitor connected in series with the transistor to be held for a long period of time. Therefore, it is preferable to use a transistor including an oxide semiconductor for the transistor M11, the transistor M12, and the transistor M15, which are connected in series with the capacitor C2 or the capacitor C3. Furthermore, by using a transistor including an oxide semiconductor for other transistors as well, manufacturing costs can be reduced.

[0514] For example, the off-state current of an OS transistor per 1 μm channel width at room temperature is 1 aA (1×10 −１８ A) Below, 1zA (1×10 −２１ A) or less, or 1 yA (1 x 10 −２４ Note that the off-state current of a Si transistor per 1 μm of channel width at room temperature can be 1 fA (1×10 −１５ A) More than 1pA (1×10 −１２ Therefore, it can be said that the off-state current of an OS transistor is about 10 orders of magnitude lower than that of a Si transistor.

[0515] Alternatively, the transistors M11 to M17 may be transistors in which silicon is used as a semiconductor in which a channel is formed. In particular, using silicon with high crystallinity, such as single crystal silicon or polycrystalline silicon, is preferable because high field-effect mobility can be achieved and higher-speed operation is possible.

[0516] Alternatively, a structure may be used in which at least one of the transistors M11 to M17 includes an oxide semiconductor and the remaining transistors include silicon.

[0517] Although the transistors are shown as n-channel transistors in FIGS. 27G and 27H, p-channel transistors can also be used.

[0518] The transistors of the pixel circuit PIX1 and the transistors of the pixel circuit PIX2 are preferably formed side by side on the same substrate. In particular, it is preferable that the transistors of the pixel circuit PIX1 and the transistors of the pixel circuit PIX2 are mixed and periodically arranged in one region.

[0519] It is also preferable to provide one or more layers including one or both of a transistor and a capacitor at a position overlapping the light receiving device PD or the light emitting device EL, thereby reducing the effective area occupied by each pixel circuit and realizing a high-definition light receiving section or display section.

[0520] To increase the light emission luminance of the light-emitting device EL included in the pixel circuit, it is necessary to increase the amount of current flowing through the light-emitting device EL. To achieve this, it is necessary to increase the source-drain voltage of the driving transistor included in the pixel circuit. Since an OS transistor has a higher source-drain breakdown voltage than a Si transistor, a high voltage can be applied between the source and drain of the OS transistor. Thus, by using an OS transistor as the driving transistor included in the pixel circuit, it is possible to increase the amount of current flowing through the light-emitting device and increase the light emission luminance of the light-emitting device.

[0521] Furthermore, when a transistor operates in the saturation region, an OS transistor can reduce the change in source-drain current with respect to a change in gate-source voltage compared to a Si transistor. Therefore, by using an OS transistor as a driving transistor included in a pixel circuit, the current flowing between the source and drain can be precisely controlled by changing the gate-source voltage, thereby controlling the amount of current flowing through the light-emitting device. This allows for a larger gradation in the pixel circuit.

[0522] Furthermore, in terms of the saturation characteristics of the current that flows when a transistor operates in a saturation region, an OS transistor can pass a more stable current (saturation current) than a Si transistor, even when the source-drain voltage gradually increases. Therefore, by using an OS transistor as a driving transistor, a stable current can be passed through a light-emitting device, for example, even when the current-voltage characteristics of a light-emitting device containing an EL material vary. In other words, when an OS transistor operates in a saturation region, the source-drain current of the OS transistor remains almost unchanged even when the source-drain voltage increases, thereby stabilizing the light-emitting luminance of the light-emitting device.

[0523] As described above, by using an OS transistor for a driving transistor included in a pixel circuit, it is possible to achieve "suppression of black floating," "increase in light emission luminance," "multiple gradations," "suppression of variations in light-emitting devices," and the like.

[0524] Furthermore, the display device of one embodiment of the present invention can have a variable refresh rate. For example, the refresh rate can be adjusted (for example, within a range of 0.01 Hz to 240 Hz) depending on the content displayed on the display device, thereby reducing power consumption. Furthermore, driving that reduces the power consumption of the display device by driving it at a reduced refresh rate may be called idling stop (IDS) driving.

[0525] The drive frequency of the touch sensor or near-touch sensor may be changed depending on the refresh rate. For example, if the refresh rate of the display device is 120 Hz, the drive frequency of the touch sensor or near-touch sensor may be set to a frequency higher than 120 Hz (typically 240 Hz). This configuration enables low power consumption and an increased response speed of the touch sensor or near-touch sensor.

[0526] This embodiment mode can be implemented by appropriately combining at least a part thereof with other embodiment modes described in this specification.

[0527] Embodiment Mode 6 In this embodiment mode, a high-definition display device will be described.

[0528] [Example of Display Panel Configuration] Wearable electronic devices for VR, AR, and the like can provide 3D images by using parallax. In this case, it is necessary to display an image for the right eye within the field of view of the right eye and an image for the left eye within the field of view of the left eye. Here, the shape of the display unit of the display device may be a horizontally long rectangle, but pixels located outside the fields of view of the right and left eyes do not contribute to the display, and therefore always display black.

[0529] Therefore, it is preferable to divide the display section of the display panel into two regions, one for the right eye and one for the left eye, and not place pixels in the outer region that does not contribute to display. This reduces the power consumption required to write pixels. Also, since the load on source lines, gate lines, etc. is reduced, a high frame rate display becomes possible. This allows for smoother video display, enhancing the sense of realism.

[0530] Fig. 28A shows an example of the configuration of a display panel. In Fig. 28A, a display portion 702L for the left eye and a display portion 702R for the right eye are arranged inside a substrate 701. Note that in addition to the display portions 702L and 702R, a driver circuit, wiring, an IC, an FPC, and the like may also be arranged on the substrate 701.

[0531] The display units 702L and 702R shown in FIG. 28A have a square top surface shape.

[0532] The top surface shape of the display unit 702L and the display unit 702R may also be another regular polygon. FIG. 28B shows an example of a regular hexagon, FIG. 28C shows an example of a regular octagon, FIG. 28D shows an example of a regular decagon, and FIG. 28E shows an example of a regular dodecagon. In this way, by using a polygon with an even number of corners, the shape of the display unit can be made symmetrical. Note that polygons that are not regular polygons may also be used. Regular polygons or polygons with rounded corners may also be used.

[0533] Since the display unit is made up of pixels arranged in a matrix, the straight line portions of the outline of each display unit may not be straight lines in the strict sense, but may have stepped portions. In particular, straight line portions that are not parallel to the pixel arrangement direction will have a stepped top surface shape. However, since the user does not see the pixel shapes when viewing, even if the diagonal outline of the display unit is strictly stepped, it can be considered to be a straight line. Similarly, even if the curved portion of the outline of the display unit is strictly stepped, it can be considered to be a curve.

[0534] FIG. 28F shows an example in which the top surfaces of the display units 702L and 702R are circular.

[0535] The top surface shapes of the display units 702L and 702R may be asymmetrical, and may not be regular polygons.

[0536] Fig. 28G shows an example in which the top surface shapes of the display units 702L and 702R are asymmetrical octagons. Fig. 28H shows an example in which the top surface shapes of the display units 702L and 702R are asymmetrical. Even when the top surfaces of the display units 702L and 702R are asymmetrical, it is preferable to arrange the display units 702L and 702R symmetrically. This allows for the provision of natural-looking images.

[0537] Although the above description has been given of a configuration in which the display section is divided into two, it may be formed as a continuous shape.

[0538] Fig. 28I shows an example in which two circular display units 702 in Fig. 28F are connected together, and Fig. 28J shows an example in which two regular octagonal display units 702 in Fig. 28C are connected together.

[0539] The above is a description of an example of the configuration of the display panel.

[0540] At least a part of the configuration examples exemplified in this embodiment and the corresponding drawings can be combined as appropriate with other configuration examples or drawings.

[0541] This embodiment mode can be implemented by appropriately combining at least a part thereof with other embodiment modes described in this specification.

[0542] Embodiment 7 In this embodiment, a metal oxide (also referred to as an oxide semiconductor) that can be used for the OS transistor described in the above embodiment will be described.

[0543] The metal oxide used in the OS transistor preferably contains at least indium or zinc, and more preferably contains indium and zinc. For example, the metal oxide preferably contains indium, M (M is one or more selected from gallium, aluminum, yttrium, tin, silicon, boron, copper, vanadium, beryllium, titanium, iron, nickel, germanium, zirconium, molybdenum, lanthanum, cerium, neodymium, hafnium, tantalum, tungsten, magnesium, and cobalt), and zinc. In particular, M is preferably one or more selected from gallium, aluminum, yttrium, and tin, and more preferably gallium.

[0544] The metal oxide can be formed by a sputtering method, a chemical vapor deposition (CVD) method such as a metal organic chemical vapor deposition (MOCVD) method, or an atomic layer deposition (ALD) method.

[0545] Hereinafter, an oxide containing indium (In), gallium (Ga), and zinc (Zn) will be described as an example of a metal oxide. Note that an oxide containing indium (In), gallium (Ga), and zinc (Zn) may be referred to as an In—Ga—Zn oxide.

[0546] <Classification of Crystal Structure> Examples of the crystal structure of an oxide semiconductor include amorphous (including completely amorphous), c-axis-aligned crystalline line (CAAC), nanocrystalline line (nc), cloud-aligned composite (CAC), single crystal, and polycrystalline.

[0547] The crystalline structure of a film or substrate can be evaluated using an X-ray diffraction (XRD) spectrum. For example, it can be evaluated using an XRD spectrum obtained by GIXD (Grazing-Incident XRD) measurement. The GIXD method is also called the thin film method or the Seemann-Bohlin method. In the following, the XRD spectrum obtained by GIXD measurement may be simply referred to as the XRD spectrum.

[0548] For example, in the case of a quartz glass substrate, the peak shape of the XRD spectrum is almost symmetrical. On the other hand, in the case of an In-Ga-Zn oxide film having a crystalline structure, the peak shape of the XRD spectrum is asymmetrical. The asymmetrical peak shape of the XRD spectrum clearly indicates the presence of crystals in the film or substrate. In other words, if the peak shape of the XRD spectrum is not symmetrical, the film or substrate cannot be said to be in an amorphous state.

[0549] The crystalline structure of a film or substrate can be evaluated by a diffraction pattern (also called a nanobeam electron diffraction pattern) observed by nanobeam electron diffraction (NBED). For example, a halo is observed in the diffraction pattern of a quartz glass substrate, confirming that the quartz glass is in an amorphous state. Furthermore, a spot-like pattern is observed in the diffraction pattern of an In—Ga—Zn oxide film formed at room temperature, rather than a halo. For this reason, it is estimated that the In—Ga—Zn oxide formed at room temperature is neither single crystal nor polycrystalline, nor in an amorphous state, but is in an intermediate state, and it cannot be concluded that it is in an amorphous state.

[0550] <<Structure of Oxide Semiconductor>> Note that oxide semiconductors may be classified differently from the above when focusing on their structures. For example, oxide semiconductors are classified into single-crystal oxide semiconductors and other non-single-crystal oxide semiconductors. Examples of non-single-crystal oxide semiconductors include the above-mentioned CAAC-OS and nc-OS. Non-single-crystal oxide semiconductors include polycrystalline oxide semiconductors, pseudo-amorphous-like oxide semiconductors (a-like OSs), amorphous oxide semiconductors, and the like.

[0551] Here, the above-mentioned CAAC-OS, nc-OS, and a-like OS will be described in detail.

[0552] [CAAC-OS] A CAAC-OS is an oxide semiconductor having multiple crystalline regions, each with its c-axis aligned in a specific direction. The specific direction refers to the thickness direction of the CAAC-OS film, the normal direction to the surface where the CAAC-OS film is formed, or the normal direction to the surface of the CAAC-OS film. A crystalline region is a region having periodic atomic arrangement. If the atomic arrangement is considered as a lattice arrangement, a crystalline region is also a region with a uniform lattice arrangement. Furthermore, a CAAC-OS has a region where multiple crystalline regions are connected in the a-b plane direction, and the region may have distortion. Note that distortion refers to a portion where the lattice arrangement changes between a region with a uniform lattice arrangement and a region with another uniform lattice arrangement in a region where multiple crystalline regions are connected. In other words, a CAAC-OS is an oxide semiconductor whose c-axes are aligned and whose orientation is not clearly aligned in the a-b plane direction.

[0553] Each of the multiple crystalline regions is composed of one or more minute crystals (crystals with a maximum diameter of less than 10 nm). When a crystalline region is composed of a single minute crystal, the maximum diameter of the crystalline region is less than 10 nm. When a crystalline region is composed of many minute crystals, the size of the crystalline region may be several tens of nanometers.

[0554] In an In—Ga—Zn oxide, CAAC-OS tends to have a layered crystal structure (also referred to as a layered structure) in which a layer containing indium (In) and oxygen (hereinafter referred to as an In layer) and a layer containing gallium (Ga), zinc (Zn), and oxygen (hereinafter referred to as a (Ga, Zn) layer) are stacked. Note that indium and gallium are mutually substituted. Therefore, the (Ga, Zn) layer may contain indium. The In layer may contain gallium. The In layer may contain zinc. The layered structure is observed as a lattice image in a high-resolution transmission electron microscope (TEM) image, for example.

[0555] When a CAAC-OS film is subjected to structural analysis using an XRD apparatus, for example, a peak indicating c-axis orientation is detected at or near 2θ = 31° in out-of-plane XRD measurement using θ / 2θ scanning. Note that the position of the peak indicating c-axis orientation (the value of 2θ) may vary depending on the type and composition of the metal elements constituting the CAAC-OS.

[0556] For example, multiple bright spots are observed in the electron diffraction pattern of a CAAC-OS film, and the observed spots are at positions that are point-symmetric with respect to a spot of an incident electron beam that has passed through the sample (also referred to as a direct spot).

[0557] When a crystalline region is observed from the specific direction, the lattice arrangement in the crystalline region is basically a hexagonal lattice, but the unit cell is not necessarily a regular hexagon and may be a non-regular hexagon. The distortion may have a pentagonal, heptagonal, or other lattice arrangement. In CAAC-OS, no clear grain boundary can be identified even near the distortion. This indicates that the distortion in the lattice arrangement suppresses the formation of grain boundaries. This is thought to be because CAAC-OS can tolerate distortion due to the lack of close-packed oxygen atom arrangement in the a-b plane direction and the change in interatomic bond distance caused by metal atom substitution.

[0558] Note that a crystal structure in which clear grain boundaries are observed is called polycrystalline. The grain boundaries act as recombination centers, and are likely to trap carriers, resulting in a decrease in the on-state current of a transistor and a decrease in field-effect mobility. Therefore, CAAC-OS, in which clear grain boundaries are not observed, is one of the crystalline oxides having a crystal structure suitable for a semiconductor layer of a transistor. Note that a structure containing Zn is preferable for forming a CAAC-OS. For example, In—Zn oxide and In—Ga—Zn oxide are suitable because they can suppress the generation of grain boundaries more effectively than In oxide.

[0559] CAAC-OS is an oxide semiconductor with high crystallinity and no clear crystal grain boundaries. Therefore, it can be said that the CAAC-OS is less susceptible to a decrease in electron mobility due to crystal grain boundaries. Furthermore, since the crystallinity of an oxide semiconductor can be reduced by the inclusion of impurities, the formation of defects, or the like, the CAAC-OS can also be said to be an oxide semiconductor with few impurities and defects (such as oxygen vacancies). Therefore, an oxide semiconductor having a CAAC-OS has stable physical properties. Therefore, an oxide semiconductor having a CAAC-OS is heat-resistant and highly reliable. Furthermore, the CAAC-OS is stable even against high temperatures (so-called thermal budget) in the manufacturing process. Therefore, the use of a CAAC-OS in an OS transistor can increase the flexibility of the manufacturing process.

[0560] [nc-OS] The nc-OS has periodic atomic arrangement in a microscopic region (e.g., a region of 1 nm to 10 nm, particularly a region of 1 nm to 3 nm). In other words, the nc-OS has microcrystals. Note that the size of the microcrystals is, for example, 1 nm to 10 nm, particularly 1 nm to 3 nm, and therefore the microcrystals are also called nanocrystals. Furthermore, the nc-OS does not exhibit regularity in the crystal orientation between different nanocrystals. Therefore, no orientation is observed throughout the film. Therefore, depending on the analysis method, the nc-OS may be indistinguishable from an a-like OS or an amorphous oxide semiconductor. For example, when a structural analysis of an nc-OS film is performed using an XRD apparatus, no peak indicating crystallinity is detected in out-of-plane XRD measurement using θ / 2θ scanning. When an nc-OS film is subjected to electron diffraction (also referred to as selected-area electron diffraction) using an electron beam with a probe diameter larger than that of a nanocrystal (e.g., 50 nm or more), a diffraction pattern resembling a halo pattern is observed. On the other hand, when an nc-OS film is subjected to electron diffraction (also referred to as nanobeam electron diffraction) using an electron beam with a probe diameter close to or smaller than that of a nanocrystal (e.g., 1 nm to 30 nm), an electron diffraction pattern in which multiple spots are observed within a ring-shaped region centered on a direct spot may be obtained.

[0561] [a-Like OS] The a-like OS is an oxide semiconductor having a structure between the nc-OS and the amorphous oxide semiconductor. The a-like OS has a pore or low-density region. That is, the a-like OS has lower crystallinity than the nc-OS and the CAAC-OS. Furthermore, the a-like OS has a higher hydrogen concentration in the film than the nc-OS and the CAAC-OS.

[0562] <<Structure of Oxide Semiconductor>> Next, the above-described CAC-OS will be described in detail. Note that the CAC-OS relates to a material structure.

[0563] [CAC-OS] CAC-OS is, for example, a material in which elements constituting a metal oxide are unevenly distributed in a size of 0.5 nm to 10 nm, preferably 1 nm to 3 nm, or in the vicinity thereof. Note that hereinafter, a state in which one or more metal elements are unevenly distributed in a metal oxide and regions containing the metal elements are mixed in a size of 0.5 nm to 10 nm, preferably 1 nm to 3 nm, or in the vicinity thereof, is also referred to as a mosaic or patch state.

[0564] Furthermore, the CAC-OS has a mosaic structure in which a material is separated into a first region and a second region, and the first region is distributed throughout the film (hereinafter also referred to as a cloud structure). That is, the CAC-OS is a composite metal oxide having a structure in which the first region and the second region are mixed.

[0565] Here, the atomic ratios of In, Ga, and Zn to the metal elements constituting the CAC-OS in the In—Ga—Zn oxide are denoted as [In], [Ga], and [Zn], respectively. For example, in the CAC-OS in the In—Ga—Zn oxide, the first region is a region where [In] is larger than [In] in the composition of the CAC-OS film. The second region is a region where [Ga] is larger than [Ga] in the composition of the CAC-OS film. Alternatively, for example, the first region is a region where [In] is larger than [In] in the second region and [Ga] is smaller than [Ga] in the second region. The second region is a region where [Ga] is larger than [Ga] in the first region and [In] is smaller than [In] in the first region.

[0566] Specifically, the first region is a region whose main component is indium oxide, indium zinc oxide, or the like. The second region is a region whose main component is gallium oxide, gallium zinc oxide, or the like. In other words, the first region can be referred to as a region whose main component is In. The second region can be referred to as a region whose main component is Ga.

[0567] It should be noted that there are cases where a clear boundary between the first region and the second region cannot be observed.

[0568] Furthermore, CAC-OS in In—Ga—Zn oxide refers to a structure in which a mosaic of regions containing Ga as the main component and regions containing In as the main component are randomly arranged in a material composition containing In, Ga, Zn, and O. Therefore, it is presumed that CAC-OS has a structure in which metal elements are distributed nonuniformly.

[0569] The CAC-OS can be formed by sputtering, for example, without intentionally heating the substrate. When forming the CAC-OS by sputtering, any one or more of an inert gas (typically argon), oxygen gas, and nitrogen gas may be used as the deposition gas. The lower the flow rate of oxygen gas relative to the total flow rate of deposition gas during deposition, the more preferable it is. For example, the flow rate of oxygen gas relative to the total flow rate of deposition gas during deposition is set to 0% or more and less than 30%, preferably 0% or more and 10% or less.

[0570] Furthermore, for example, in the case of CAC-OS in an In—Ga—Zn oxide, EDX mapping obtained using energy dispersive X-ray spectroscopy (EDX) can confirm that the CAC-OS has a structure in which a region containing In as a main component (first region) and a region containing Ga as a main component (second region) are unevenly distributed and mixed.

[0571] Here, the first region has higher conductivity than the second region. That is, the flow of carriers through the first region causes the metal oxide to exhibit conductivity. Therefore, the first region is distributed in a cloud-like manner in the metal oxide, thereby achieving a high field-effect mobility (μ).

[0572] On the other hand, the second region has higher insulating properties than the first region. That is, the second region is distributed in the metal oxide, thereby suppressing leakage current.

[0573] Therefore, when a CAC-OS is used in a transistor, the conductivity due to the first region and the insulating property due to the second region act complementarily, thereby providing the CAC-OS with a switching function (a function of turning on / off). In other words, a CAC-OS has a conductive function in a part of the material and an insulating function in a part of the material, and the entire material functions as a semiconductor. By separating the conductive function and the insulating function, both functions can be maximized. Therefore, by using a CAC-OS in a transistor, a high on-current (I ｏｎ ), high field-effect mobility (μ), and good switching behavior can be achieved.

[0574] Furthermore, a transistor using the CAC-OS has high reliability, and therefore, the CAC-OS is ideal for various semiconductor devices such as display devices.

[0575] Oxide semiconductors have a variety of structures, each of which has different characteristics. The oxide semiconductor of one embodiment of the present invention may include two or more of an amorphous oxide semiconductor, a polycrystalline oxide semiconductor, an a-like OS, a CAC-OS, an nc-OS, and a CAAC-OS.

[0576] <Transistor Having Oxide Semiconductor> Next, a case where the oxide semiconductor is used for a transistor will be described.

[0577] By using the oxide semiconductor for a transistor, a transistor with high field-effect mobility and high reliability can be realized.

[0578] For the transistor, an oxide semiconductor having a low carrier concentration is preferably used. For example, the carrier concentration of the oxide semiconductor is 1×10 １７ cm −３ Below 1 × 10, preferably １５ cm −３ More preferably, 1×10 １３ cm −３ or less, more preferably 1 × 10 １１ cm −３ More preferably, 1×10１０ cm −３ is less than 1×10 −９ cm −３ That is all. Note that in order to reduce the carrier concentration of an oxide semiconductor film, the impurity concentration in the oxide semiconductor film may be reduced to reduce the density of defect states. In this specification and the like, a semiconductor having a low impurity concentration and a low density of defect states is referred to as a highly purified intrinsic or substantially highly purified intrinsic oxide semiconductor. Note that an oxide semiconductor having a low carrier concentration may also be referred to as a highly purified intrinsic or substantially highly purified intrinsic oxide semiconductor.

[0579] Furthermore, a highly purified intrinsic or substantially highly purified intrinsic oxide semiconductor film has a low density of defect states, and therefore the density of trap states may also be low.

[0580] Furthermore, charges trapped in the trap states of an oxide semiconductor take a long time to dissipate and may behave like fixed charges. Therefore, a transistor in which a channel formation region is formed in an oxide semiconductor with a high density of trap states may have unstable electrical characteristics.

[0581] Therefore, reducing the impurity concentration in the oxide semiconductor is effective for stabilizing the electrical characteristics of a transistor. Furthermore, in order to reduce the impurity concentration in the oxide semiconductor, it is preferable to also reduce the impurity concentration in adjacent films. Examples of impurities include hydrogen, nitrogen, alkali metals, alkaline earth metals, iron, nickel, and silicon. Note that impurities in an oxide semiconductor refer to, for example, elements other than the main components constituting the oxide semiconductor. For example, an element with a concentration of less than 0.1 atomic % can be considered an impurity.

[0582] <Impurities> Here, the influence of each impurity in an oxide semiconductor will be described.

[0583] When an oxide semiconductor contains silicon or carbon, which is one of Group 14 elements, defect levels are formed in the oxide semiconductor. Therefore, the concentration of silicon or carbon in the oxide semiconductor and the concentration of silicon or carbon near the interface with the oxide semiconductor (concentration obtained by secondary ion mass spectrometry (SIMS)) are set to 2×10 １８ atoms / cm ３ Below 2 × 10, preferably １７ atoms / cm ３ The following applies.

[0584] Furthermore, when an oxide semiconductor contains an alkali metal or an alkaline earth metal, defect levels are formed and carriers are generated in some cases. Therefore, a transistor using an oxide semiconductor containing an alkali metal or an alkaline earth metal is likely to have normally-on characteristics. For this reason, when the concentration of the alkali metal or the alkaline earth metal in the oxide semiconductor obtained by SIMS is 1×10 １８ atoms / cm ３ Below 2 × 10, preferably １６ atoms / cm ３ Do the following:

[0585] Furthermore, when nitrogen is contained in an oxide semiconductor, electrons serving as carriers are generated, the carrier concentration increases, and the semiconductor is likely to become n-type. As a result, a transistor using an oxide semiconductor containing nitrogen as a semiconductor tends to have normally-on characteristics. Alternatively, when nitrogen is contained in an oxide semiconductor, trap states may be formed. As a result, the electrical characteristics of the transistor may become unstable. For this reason, the nitrogen concentration in the oxide semiconductor obtained by SIMS is set to 5×10 １９ atoms / cm ３ Less than 5×10 １８ atoms / cm ３ or less, more preferably 1 × 10 １８ atoms / cm ３ or less, more preferably 5 × 10 １７ atoms / cm ３ Do the following:

[0586] Furthermore, hydrogen contained in an oxide semiconductor may react with oxygen bonded to a metal atom to form water, which may form an oxygen vacancy. Hydrogen entering the oxygen vacancy may generate electrons as carriers. Furthermore, some of the hydrogen may bond with oxygen bonded to a metal atom to generate electrons as carriers. Therefore, a transistor using an oxide semiconductor containing hydrogen is likely to have normally-on characteristics. Therefore, it is preferable to reduce the amount of hydrogen in the oxide semiconductor as much as possible. Specifically, the hydrogen concentration in the oxide semiconductor obtained by SIMS is measured to be 1×10 ２０ atoms / cm ３ less than 1×10 １９ atoms / cm ３ less than 5×10 １８ atoms / cm ３ less than 1×10 １８ atoms / cm ３ Make it less than.

[0587] When an oxide semiconductor with sufficiently reduced impurities is used for a channel formation region of a transistor, stable electrical characteristics can be obtained.

[0588] This embodiment mode can be implemented by appropriately combining at least a part thereof with other embodiment modes described in this specification.

[0589] Embodiment 8 In this embodiment, electronic devices of one embodiment of the present invention will be described with reference to FIGS.

[0590] The electronic devices of this embodiment include the display device of one embodiment of the present invention. The display device of one embodiment of the present invention can easily achieve high definition, high resolution, and a large size. Therefore, the display device of one embodiment of the present invention can be used as a display portion of various electronic devices.

[0591] Furthermore, the display device of one embodiment of the present invention can be manufactured at low cost, which leads to a reduction in the manufacturing cost of electronic devices.

[0592] Examples of electronic devices include electronic devices with relatively large screens such as television sets, desktop or notebook personal computers, computer monitors, digital signage, large game machines such as pachinko machines, as well as digital cameras, digital video cameras, digital photo frames, mobile phones, portable game machines, personal digital assistants, and sound playback devices.

[0593] In particular, the display device of one embodiment of the present invention can be suitably used in electronic devices having a relatively small display portion because it can increase the resolution. Examples of such electronic devices include information terminals (wearable devices) such as wristwatches and bracelets, as well as head-mounted wearable devices such as VR devices and eyeglass-type AR devices. Examples of wearable devices include devices for Substitutional Reality (SR) and Mixed Reality (MR).

[0594] The display device of one embodiment of the present invention preferably has an extremely high resolution such as HD (1280 × 720 pixels), FHD (1920 × 1080 pixels), WQHD (2560 × 1440 pixels), WQXGA (2560 × 1600 pixels), 4K2K (3840 × 2160 pixels), or 8K4K (7680 × 4320 pixels). A resolution of 4K2K, 8K4K, or higher is particularly preferable. Furthermore, the pixel density (resolution) of the display device of one embodiment of the present invention is preferably 300 ppi or higher, more preferably 500 ppi or higher, more preferably 1000 ppi or higher, more preferably 2000 ppi or higher, more preferably 3000 ppi or higher, more preferably 5000 ppi or higher, and even more preferably 7000 ppi or higher. By using a display device with such high resolution or high definition, it is possible to further enhance the sense of presence and depth in electronic devices for personal use such as portable or home use.

[0595] The electronic device of this embodiment can be incorporated along the curved surface of the inner or outer wall of a house or building, or the interior or exterior of an automobile.

[0596] The electronic device of this embodiment may have an antenna. By receiving a signal through the antenna, images, information, and the like can be displayed on a display portion. In addition, when the electronic device has an antenna and a secondary battery, the antenna may be used for contactless power transmission.

[0597] The electronic device of this embodiment may have a sensor (including the function of detecting, detecting, or measuring force, displacement, position, velocity, acceleration, angular velocity, rotation speed, distance, light, liquid, magnetism, temperature, chemical substance, sound, time, hardness, electric field, current, voltage, power, radiation, flow rate, humidity, gradient, vibration, odor, or infrared rays).

[0598] The electronic device of the present embodiment can have various functions, such as a function to display various information (still images, videos, text images, etc.) on a display unit, a touch panel function, a function to display a calendar, date, time, etc., a function to execute various software (programs), a wireless communication function, a function to read out programs or data recorded on a recording medium, etc.

[0599] The electronic device 6500 shown in FIG. 29A is a portable information terminal that can be used as a smartphone.

[0600] The electronic device 6500 includes a housing 6501, a display portion 6502, a power button 6503, a button 6504, a speaker 6505, a microphone 6506, a camera 6507, a light source 6508, and the like. The display portion 6502 has a touch panel function.

[0601] The display device of one embodiment of the present invention can be applied to the display portion 6502 .

[0602] FIG. 29B is a schematic cross-sectional view including the end of the housing 6501 on the microphone 6506 side.

[0603] A light-transmitting protective member 6510 is provided on the display surface side of the housing 6501, and a display panel 6511, optical members 6512, a touch sensor panel 6513, a printed circuit board 6517, a battery 6518, etc. are arranged in the space surrounded by the housing 6501 and the protective member 6510.

[0604] A display panel 6511, an optical member 6512, and a touch sensor panel 6513 are fixed to the protective member 6510 by adhesive layers (not shown).

[0605] In a region outside the display portion 6502, a part of the display panel 6511 is folded back, and an FPC 6515 is connected to the folded back part. An IC 6516 is mounted on the FPC 6515. The FPC 6515 is connected to a terminal provided on a printed circuit board 6517.

[0606] The flexible display (flexible display device) of one embodiment of the present invention can be applied to the display panel 6511. Therefore, an extremely lightweight electronic device can be realized. In addition, since the display panel 6511 is extremely thin, a large-capacity battery 6518 can be mounted thereon while keeping the thickness of the electronic device small. Furthermore, by folding back a part of the display panel 6511 and arranging a connection portion with the FPC 6515 on the back side of the pixel portion, an electronic device with a narrow frame can be realized.

[0607] 30A shows an example of a television set. A television set 7100 has a display portion 7000 built into a housing 7101. Here, the housing 7101 is supported by a stand 7103.

[0608] The display device of one embodiment of the present invention can be applied to the display portion 7000 .

[0609] 30A can be operated using operation switches provided on the housing 7101 and a separate remote control 7111. Alternatively, the display portion 7000 may be provided with a touch sensor, and the television set 7100 may be operated by touching the display portion 7000 with a finger or the like. The remote control 7111 may have a display portion that displays information output from the remote control 7111. Using operation keys or a touch panel provided on the remote control 7111, the channel and volume can be controlled, and an image displayed on the display portion 7000 can be controlled.

[0610] The television device 7100 is configured to include a receiver, a modem, and the like. Ordinary television broadcasts can be received using the receiver. Furthermore, by connecting to a wired or wireless communication network via the modem, it is possible to perform one-way (from a sender to a receiver) or two-way (between a sender and a receiver, or between receivers, etc.) information communication.

[0611] 30B shows an example of a laptop personal computer 7200. The laptop personal computer 7200 includes a housing 7211, a keyboard 7212, a pointing device 7213, an external connection port 7214, and the like. A display portion 7000 is incorporated in the housing 7211.

[0612] The display device of one embodiment of the present invention can be applied to the display portion 7000 .

[0613] 30C and 30D show an example of digital signage.

[0614] 30C includes a housing 7301, a display portion 7000, and a speaker 7303. The digital signage 7300 may further include an LED lamp, operation keys (including a power switch or an operation switch), a connection terminal, various sensors, a microphone, and the like.

[0615] 30D shows a digital signage 7400 attached to a cylindrical pillar 7401. The digital signage 7400 has a display unit 7000 provided along the curved surface of the pillar 7401.

[0616] 30C and 30D, the display device of one embodiment of the present invention can be applied to the display portion 7000.

[0617] The larger the display unit 7000, the more information can be provided at one time. Also, the larger the display unit 7000, the more easily it will attract people's attention, which can increase the advertising effectiveness of, for example, advertisements.

[0618] Applying a touch panel to the display unit 7000 is preferable because it not only displays images or videos on the display unit 7000 but also allows the user to intuitively operate it. Furthermore, when used to provide information such as route information or traffic information, the intuitive operation can improve usability.

[0619] 30C and 30D , the digital signage 7300 or the digital signage 7400 is preferably capable of wirelessly linking with an information terminal 7311 or an information terminal 7411 such as a smartphone carried by a user. For example, advertising information displayed on the display unit 7000 can be displayed on the screen of the information terminal 7311 or the information terminal 7411. By operating the information terminal 7311 or the information terminal 7411, the display on the display unit 7000 can be switched.

[0620] Furthermore, the digital signage 7300 or the digital signage 7400 can be made to run a game using the screen of the information terminal 7311 or the information terminal 7411 as an operation means (controller), thereby allowing an unspecified number of users to simultaneously participate in and enjoy the game.

[0621] FIG. 31A is a diagram showing the appearance of the camera 8000 with the viewfinder 8100 attached.

[0622] The camera 8000 includes a housing 8001, a display unit 8002, operation buttons 8003, a shutter button 8004, and the like. A detachable lens 8006 is attached to the camera 8000. Note that the lens 8006 and the housing 8001 of the camera 8000 may be integrated together.

[0623] The camera 8000 can capture an image by pressing a shutter button 8004 or touching a display portion 8002 that functions as a touch panel.

[0624] The housing 8001 has a mount with electrodes, and can be connected to a finder 8100 as well as a strobe device and the like.

[0625] The finder 8100 includes a housing 8101, a display portion 8102, a button 8103, and the like.

[0626] The housing 8101 is attached to the camera 8000 by a mount that engages with the mount of the camera 8000. The viewfinder 8100 can display an image received from the camera 8000 on a display portion 8102.

[0627] The button 8103 has a function as a power button or the like.

[0628] The display device of one embodiment of the present invention can be applied to a display portion 8002 of a camera 8000 and a display portion 8102 of a finder 8100. Note that the camera 8000 may have a built-in finder.

[0629] FIG. 31B is a diagram showing the appearance of the head-mounted display 8200.

[0630] The head-mounted display 8200 includes a mounting portion 8201, a lens 8202, a main body 8203, a display portion 8204, and a cable 8205. The mounting portion 8201 has a built-in battery 8206.

[0631] A cable 8205 supplies power from a battery 8206 to the main body 8203. The main body 8203 includes a wireless receiver or the like and can display received video information on a display portion 8204. The main body 8203 also includes a camera and can use information on the movement of the user's eyeballs or eyelids as an input means.

[0632] The wearing unit 8201 may have a plurality of electrodes at positions that come into contact with the user, capable of detecting a current that flows in accordance with the movement of the user's eyeballs, and may have a function of recognizing the line of sight. The wearing unit 8201 may also have a function of monitoring the user's pulse based on the current that flows through the electrodes. The wearing unit 8201 may also have various sensors such as a temperature sensor, a pressure sensor, and an acceleration sensor, and may have a function of displaying biometric information of the user on the display unit 8204 and a function of changing an image displayed on the display unit 8204 in accordance with the movement of the user's head.

[0633] The display device of one embodiment of the present invention can be applied to the display portion 8204 .

[0634] 31C to 31E are diagrams showing the appearance of a head mounted display 8300. The head mounted display 8300 includes a housing 8301, a display portion 8302, a band-shaped fixture 8304, and a pair of lenses 8305.

[0635] A user can view the display on the display portion 8302 through the lens 8305. Note that it is preferable to curve the display portion 8302 because the user can feel a high sense of presence. In addition, by viewing different images displayed in different regions of the display portion 8302 through the lens 8305, three-dimensional display using parallax can be performed. Note that the present invention is not limited to a configuration in which one display portion 8302 is provided, and two display portions 8302 may be provided, with one display portion provided for each eye of the user.

[0636] The display device of one embodiment of the present invention can be applied to the display portion 8302. The display device of one embodiment of the present invention can also achieve extremely high definition. For example, even when the display is enlarged and viewed using the lens 8305 as shown in FIG. 31E, the pixels are hardly visible to the user. That is, the display portion 8302 can be used to allow the user to view a highly realistic image.

[0637] 31F is a diagram showing the appearance of a goggle-type head-mounted display 8400. The head-mounted display 8400 includes a pair of housings 8401, an attachment portion 8402, and a cushioning member 8403. A display portion 8404 and a lens 8405 are provided in each of the pair of housings 8401. By displaying different images on the pair of display portions 8404, three-dimensional display using parallax can be performed.

[0638] A user can view the display portion 8404 through the lens 8405. The lens 8405 has a focus adjustment mechanism, and its position can be adjusted according to the user's eyesight. The display portion 8404 is preferably a square or a horizontally long rectangle. This can enhance the sense of realism.

[0639] The attachment portion 8402 preferably has plasticity and elasticity so that it can be adjusted according to the size of the user's face and does not slip off. Furthermore, a portion of the attachment portion 8402 preferably has a vibration mechanism that functions as a bone conduction earphone. This allows the user to enjoy video and audio simply by wearing the device, without the need for separate audio equipment such as earphones or speakers. The housing 8401 may also have a function for outputting audio data via wireless communication.

[0640] The mounting portion 8402 and the buffer member 8403 are portions that come into contact with the user's face (forehead, cheeks, etc.). The close contact of the buffer member 8403 with the user's face can prevent light leakage and enhance the sense of immersion. The buffer member 8403 is preferably made of a soft material so that it can be in close contact with the user's face when the user wears the head-mounted display 8400. For example, materials such as rubber, silicone rubber, urethane, and sponge can be used. Furthermore, using a sponge or the like with its surface covered with cloth, leather (natural leather or synthetic leather), or the like can prevent gaps from forming between the user's face and the buffer member 8403, thereby effectively preventing light leakage. Furthermore, using such a material is preferable because it feels pleasant to the touch and prevents the user from feeling cold when worn in cold seasons. It is preferable that the buffer member 8403 or the mounting portion 8402, or other components that come into contact with the user's skin, are removable for easy cleaning or replacement.

[0641] The electronic device shown in Figures 32A to 32F has a housing 9000, a display unit 9001, a speaker 9003, operation keys 9005 (including a power switch or an operation switch), a connection terminal 9006, a sensor 9007 (including the function of detecting, detecting, or measuring force, displacement, position, speed, acceleration, angular velocity, rotation speed, distance, light, liquid, magnetism, temperature, chemical substance, sound, time, hardness, electric field, current, voltage, power, radiation, flow rate, humidity, gradient, vibration, odor, or infrared rays), a microphone 9008, etc.

[0642] The electronic devices shown in Figures 32A to 32F have various functions. For example, they may have a function to display various information (still images, videos, text images, etc.) on a display unit, a touch panel function, a function to display a calendar, date, or time, a function to control processing using various software (programs), a wireless communication function, a function to read and process programs or data recorded on a recording medium, etc. Note that the functions of the electronic devices are not limited to these, and they may have various other functions. The electronic devices may have multiple display units. Furthermore, the electronic devices may have a function to include a camera or the like to capture still images or videos and store them on a recording medium (external or built-in to the camera), a function to display the captured images on a display unit, etc.

[0643] The display device of one embodiment of the present invention can be applied to the display portion 9001 .

[0644] Details of the electronic device shown in Figures 32A to 32F will be described below.

[0645] FIG. 32A is a perspective view showing a mobile information terminal 9101. The mobile information terminal 9101 can be used as, for example, a smartphone. Note that the mobile information terminal 9101 may be provided with a speaker 9003, a connection terminal 9006, a sensor 9007, and the like. The mobile information terminal 9101 can display text and image information on multiple surfaces. FIG. 32A shows an example in which three icons 9050 are displayed. Information 9051, indicated by a dashed rectangle, can also be displayed on another surface of the display unit 9001. Examples of the information 9051 include notifications of incoming emails, SNS messages, phone calls, etc., the title of the email or SNS message, the sender's name, the date and time, the remaining battery level, and the strength of antenna reception. Alternatively, an icon 9050 or the like may be displayed in the position where the information 9051 is displayed.

[0646] 32B is a perspective view showing the mobile information terminal 9102. The mobile information terminal 9102 has a function of displaying information on three or more surfaces of the display unit 9001. Here, an example is shown in which information 9052, information 9053, and information 9054 are displayed on different surfaces. For example, a user can check information 9053 displayed in a position that can be observed from above the mobile information terminal 9102 while the mobile information terminal 9102 is placed in a breast pocket of clothes. The user can check the display without taking the mobile information terminal 9102 out of the pocket and decide, for example, whether to answer a call.

[0647] FIG. 32C is a perspective view showing a wristwatch-type mobile information terminal 9200. The mobile information terminal 9200 can be used as, for example, a smart watch (registered trademark). The display surface of the display unit 9001 is curved, and display can be performed along the curved display surface. Hands-free calling is also possible by mutually communicating the mobile information terminal 9200 with, for example, a headset capable of wireless communication. The mobile information terminal 9200 can also perform mutual data transmission with another information terminal and charging via a connection terminal 9006. Charging may be performed by wireless power supply.

[0648] 32D to 32F are perspective views showing a foldable mobile information terminal 9201. Also, FIG. 32D is a perspective view of the mobile information terminal 9201 in an unfolded state, FIG. 32F is a perspective view of the mobile information terminal 9201 in a folded state, and FIG. 32E is a perspective view of a state in the process of changing from one of FIG. 32D and FIG. 32F to the other. The mobile information terminal 9201 is highly portable when folded, and has a seamless, wide display area when unfolded, providing excellent visibility of the display. The display portion 9001 of the mobile information terminal 9201 is supported by three housings 9000 connected by hinges 9055. For example, the display portion 9001 can be bent with a curvature radius of 0.1 mm or more and 150 mm or less.

[0649] At least a part of the configuration examples exemplified in this embodiment and the corresponding drawings can be combined as appropriate with other configuration examples or drawings.

[0650] This embodiment mode can be implemented by appropriately combining at least a part thereof with other embodiment modes described in this specification.

[0651] 100: display device, 101: substrate, 105: insulating layer, 110: light-emitting element, 110B: light-emitting element, 110G: light-emitting element, 110R: light-emitting element, 110S: light-receiving element, 111: pixel electrode, 111A: electrode, 111B: pixel electrode, 111C: connection electrode, 111G: pixel electrode, 111R: pixel electrode, 111S: pixel electrode, 112: organic layer, 112B: organic layer, 112G: organic layer, 112R: organic layer, 113: common electrode, 114: organic layer, 115: organic layer, 116: organic layer, 120: slit, 121: protective layer, 125: insulating layer, 125f: insulating film, 126: resin layer, 126G: resin layer, 126S: resin layer, 130: connection portion, 131: insulating layer, 132: insulating layer, 135B: layer, 135G: layer, 135R: layer, 135S: layer, 140: connection portion, 143: resist mask, 144: sacrificial film, 145: sacrificial layer, 146: sacrificial film, 147: sacrificial layer, 151B: FMM, 151G: FMM, 151R: FMM, 151S: FMM, 155: organic layer, 161: conductive layer, 162: conductive layer, 163: resin layer, 170: substrate, 171: resin layer, 172: light-shielding layer, 173: layer, 175: layer, 176: resin layer, 177: light-shielding layer, 180: light

Claims

1. A light-emitting element, a light-receiving element, a first resin layer, a light-shielding layer, and a first spacer, wherein in the light-emitting element, a first pixel electrode, a first organic layer, and a common electrode are laminated in this order, in the light-receiving element, a second pixel electrode, a second organic layer, and the common electrode are laminated in this order, the first organic layer includes a first light-emitting layer, the second organic layer includes a photoelectric conversion layer, the light-shielding layer has a portion located between the light-emitting element and the light-receiving element in a plan view, the first resin layer is provided to cover the light-emitting element and the light-receiving element, the first resin layer has portions located between the light-emitting element and the light-shielding layer and between the light-receiving element and the light-shielding layer, in a region where the first resin layer overlaps with the light-shielding layer, the first resin layer has a portion having a thickness smaller than the arrangement interval between the light-emitting element and the light-receiving element, the first spacer has a portion overlapping with the light-emitting element and a portion located between the light-emitting element and the light-receiving element in a plan view, the first spacer has an opening overlapping with the light-receiving element, the light-shielding layer is located between the first resin layer and the first spacer, the light-shielding layer has a portion covering the inner wall of the opening of the first spacer, the first resin layer has a portion having a thickness smaller than the arrangement interval between the light-emitting element and the light-receiving element in a region overlapping with the first spacer and the light-shielding layer. A display device.

2. A light-emitting element, a light-receiving element, a first resin layer, a light-shielding layer, and a second spacer, wherein in the light-emitting element, a first pixel electrode, a first organic layer, and a common electrode are laminated in this order, in the light-receiving element, a second pixel electrode, a second organic layer, and the common electrode are laminated in this order, the first organic layer includes a first light-emitting layer, the second organic layer includes a photoelectric conversion layer, the second spacer has a portion overlapping with the light-receiving element and a portion located between the light-emitting element and the light-receiving element in a plan view, the second spacer does not overlap with the light-emitting element, the light-shielding layer is provided to cover the upper surface and the side surface at the side end portion of the second spacer, the first resin layer is provided to cover the light-emitting element, the light-receiving element, the second spacer, and the light-shielding layer, A display device.

3. A light-emitting element, a light-receiving element, a first resin layer, a light-shielding layer, and a protective layer, The light-emitting element has a first pixel electrode, a first organic layer, and a common electrode laminated in this order. The light-receiving element has a second pixel electrode, a second organic layer, and the common electrode laminated in this order. The first organic layer includes a first light-emitting layer. The second organic layer includes a photoelectric conversion layer. The protective layer is provided to cover the light-emitting element and the light-receiving element. The protective layer has portions located between the first resin layer and the light-emitting element and between the first resin layer and the light-receiving element. The light-shielding layer has a portion located between the light-emitting element and the light-receiving element in plan view. The light-shielding layer has a portion in contact with the protective layer. The first resin layer is divided by the light-shielding layer. Display device.

4. In any one of Claims 1 to 3, It has a second resin layer. The second resin layer is located in the region between the light-emitting element and the light-receiving element. The second resin layer has a portion that does not overlap with the first organic layer, the second organic layer, the first pixel electrode, and the second pixel electrode, and overlaps with the common electrode. Display device.

5. In Claim 4, The second resin layer is divided into a first portion located on the light-emitting element side and a second portion located on the light-receiving element side. The common electrode is provided to cover the first portion and the second portion and fill the gap between the first portion and the second portion. Display device.

6. In any one of Claims 1 to 5, It has a first insulating layer. The first insulating layer is located between the light-emitting element and the light-receiving element. The first insulating layer is in contact with the ends of the first organic layer and the ends of the second organic layer. Display device.

7. In any one of Claims 1 to 6, Between the light-emitting element and the light-receiving element, there are a first layer and a second layer. The first layer overlaps with the second organic layer and contains the same material as the first organic layer. The second layer overlaps with the first organic layer and contains the same material as the second organic layer. In the region between the light-emitting element and the light-receiving element, the end of the first organic layer and the end of the first layer are provided to face each other. In the region between the light-emitting element and the light-receiving element, the end of the second organic layer and the end of the second layer are provided to face each other. Display device.