Display device, electronic apparatus, and method for operating light-emitting device

Abstract

Provided are a display device capable of capturing images, and an electronic apparatus in which the number of components is reduced. The display device has a display part including a first region and a second region. The first region has imaging pixels, and the second region has light-emitting pixels. The light-emitting pixels each have a light-emitting device for emitting either infrared light or visible light, and the imaging pixels each have a light-receiving device for receiving either infrared light or visible light. In particular, a central portion of the display part is a circular region that is centered on a point at which two diagonal lines drawn on the display part intersect and that has a radius of L / 8 or less, where L is with the diagonal line length of the display part. The first region and the central portion have a mutually overlapping region. The second region is shaped as a square frame, and it is preferable that the first region is positioned inside of the frame.

Description

Display device, electronic device, and method for operating light-emitting device

[0001] One embodiment of the present invention relates to a display device, an electronic device, and a method for operating a light-emitting device.

[0002] Note that one embodiment of the present invention is not limited to the above technical field. The technical field of the invention disclosed in this specification and the like relates to an object, a driving method, or a manufacturing method. Alternatively, one embodiment of the present invention relates to a process, a machine, manufacture, or a composition of matter. Therefore, specific examples of the technical field of one embodiment of the present invention disclosed in this specification include a semiconductor device, a display device, a liquid crystal display device, a light-emitting device, a power storage device, an imaging device, a memory device, a signal processing device, a processor, an electronic device, a system, a driving method thereof, a manufacturing method thereof, or an inspection method thereof.

[0003] In recent years, improvements have been made to display devices included in electronic devices for XR (Extended Reality or Cross Reality), such as VR (Virtual Reality) and AR (Augmented Reality), mobile phones such as smartphones, tablet information terminals, and notebook PCs (personal computers). For example, display devices have been developed to have higher screen resolution, higher color reproducibility (NTSC ratio), smaller drive circuits, or lower power consumption.

[0004] Eye tracking technology has been attracting particular attention in XR electronic devices. Eye tracking is a method of measuring the movement of a user's eyeballs and tracking the user's gaze. Eye tracking is expected to be applied to, for example, sports, education, marketing, hazard detection, health management, and user interfaces for electronic devices. Therefore, various gaze tracking methods have been proposed in recent years. For example, Patent Literature 1 discloses a technology that improves on the corneal reflex method (PCCR method), which irradiates light onto the cornea and calculates eyeball movement from images of the light reflection point and the pupil.

[0005] US Patent Application Publication No. 2006 / 0238707

[0006] Eye tracking requires an imaging device for capturing an image of the eyeball and an imaging light source for illuminating the eyeball. Therefore, XR electronic devices may be configured so that the imaging device and the imaging light source are positioned around the user's eye when the XR electronic device is worn. In other words, XR electronic devices may be provided with multiple imaging devices around the user's eye, which may increase the volume of the area around the user's eye. Conversely, by integrating the imaging device and the imaging light source into the same configuration, the volume of the XR electronic device can be reduced.

[0007] Furthermore, by combining the imaging device and the imaging light source into the same configuration, the configuration may be applicable to a light emitting device provided in an electronic device (imaging device) such as a microscope.

[0008] An object of one embodiment of the present invention is to provide a display device capable of eye tracking.An object of one embodiment of the present invention is to provide a display device or a light-emitting device capable of imaging.An object of one embodiment of the present invention is to provide a compact electronic device.An object of one embodiment of the present invention is to provide a novel display device, a novel light-emitting device, or a novel electronic device.

[0009] Another object of one embodiment of the present invention is to provide a method for operating a light-emitting device capable of imaging.Another object of one embodiment of the present invention is to provide a method for operating a novel light-emitting device.

[0010] Note that the problems of one embodiment of the present invention are not limited to the problems listed above. The problems listed above do not preclude the existence of other problems. Note that the other problems are problems not mentioned in this section, which will be described below. Problems not mentioned in this section can be derived by a person skilled in the art from the description in the specification or drawings, and can be appropriately extracted from these descriptions. Note that one embodiment of the present invention solves at least one of the problems listed above and other problems. Note that one embodiment of the present invention does not necessarily solve all of the problems listed above and other problems.

[0011] (1) One embodiment of the present invention is a display device having a display unit including a first region and a second region. The first region has an imaging pixel, and the second region has an emission pixel. The emission pixel has a light-emitting device that emits either infrared light or visible light, and the imaging pixel has a light-receiving device that receives light emitted from the emission pixel. The center of the display unit is a circular region centered at the point where two diagonal lines drawn on the display unit intersect, and the radius of the circle is ⅛ or less of the diagonal lines of the display unit. The first region has a region that overlaps with the center.

[0012] (2) Alternatively, in one embodiment of the present invention, in (1), the second region may have a rectangular frame shape, and the first region may be located inside the frame shape.

[0013] (3) Another aspect of the present invention is an electronic device including the display device of (1) or (2) and a housing. In particular, the housing has a shape that can be worn on a human head. Furthermore, when the housing is worn on the human head, it is preferable that the first region has a region that overlaps with a human eye in a front view.

[0014] (4) Alternatively, one aspect of the present invention is a method for operating a light-emitting device having an imaging unit including a plurality of light-emitting pixels and a plurality of imaging pixels. The light-emitting pixels have light-emitting devices that emit either infrared light or visible light, and the imaging pixels have light-receiving devices that receive either infrared light or visible light. The method for operating the light-emitting device includes a first step and a second step. The first region is defined as a region where imaging is performed by a light-receiving device included in the first region, the second region is defined as a region where a light-emitting device included in the second region emits light, and the third region is defined as a region where the light-emitting pixels and imaging pixels included in the third region are placed in a standby state. The first step includes a step of setting the first region, the second region, and the third region in the imaging unit. The second step includes a step of resetting the first region set in the imaging unit to the second region or the third region, the second region set in the imaging unit to the first region or the third region, and a part of the third region set in the imaging unit to the first region or the second region.

[0015] (5) Alternatively, one aspect of the present invention is a method for operating a light-emitting device having an imaging unit including a plurality of light-emitting pixels and a plurality of imaging pixels, the method differing from the method described in (4). The light-emitting pixels have light-emitting devices that emit either infrared light or visible light, and the imaging pixels have light-receiving devices that receive either infrared light or visible light. The method for operating the light-emitting device includes a first step and a second step. The first region is defined as a region where imaging is performed by a light-receiving device included in the first region, and the second region is defined as a region where light is emitted by a light-emitting device included in the second region. The first step includes a step of setting the first region and the second region in the imaging unit. The second step includes a step of resetting the first region set in the imaging unit to the second region and the second region set in the imaging unit to the first region.

[0016] According to one embodiment of the present invention, a display device capable of eye tracking can be provided. Alternatively, according to one embodiment of the present invention, a display device or light-emitting device capable of imaging can be provided. Alternatively, according to one embodiment of the present invention, a compact electronic device can be provided. Alternatively, according to one embodiment of the present invention, a novel display device, a novel light-emitting device, or a novel electronic device can be provided.

[0017] According to one embodiment of the present invention, a method for operating a light-emitting device capable of imaging can be provided. Alternatively, according to one embodiment of the present invention, a novel method for operating a light-emitting device can be provided.

[0018] The effects of one embodiment of the present invention are not limited to the effects listed above. The effects listed above do not preclude the existence of other effects. The other effects are described below and are not mentioned in this section. Effects not mentioned in this section can be derived by a person skilled in the art from the description in the specification or drawings, and can be extracted as appropriate from these descriptions. One embodiment of the present invention has at least one of the effects listed above and other effects. Therefore, one embodiment of the present invention may not have the effects listed above in some cases.

[0019] 1A to 1C are schematic diagrams illustrating examples of each region of a display unit included in a display device. FIGS. 2A and 2B are schematic diagrams illustrating an example of the configuration of an electronic device. FIGS. 3A to 3C are schematic diagrams illustrating examples of each region of a display unit included in a display device. FIGS. 4A to 4E are schematic diagrams illustrating examples of each region of a display unit included in a display device. FIGS. 5A to 5D are block diagrams illustrating examples of pixel circuits included in a display device. FIGS. 6A and 6B are schematic cross-sectional views showing an example of the configuration of a display device. FIG. 7A is a schematic plan view showing an example of a display unit included in a display device, and FIG. 7B is a schematic plan view showing an example of a drive circuit region of the display device. FIG. 8 is a schematic plan view showing an example of the configuration of a display device. FIG. 9 is a block diagram showing an example of the configuration of a portion of a display device. FIG. 10 is a block diagram showing an example of the configuration of a display device. FIG. 11A is a perspective view showing an example of an electronic device, FIG. 11B is a cross-sectional view showing an example of an electronic device, and FIG. 11C is a diagram showing an example of how the electronic device is used. FIG. 11D is a perspective view showing an example of an electronic device, and FIG. 11E is a diagram showing an example of how the electronic device is used. FIGS. 12A to 12E are schematic diagrams illustrating examples of each region of an imaging unit provided in a light-emitting device. FIG. 13 is a flowchart showing an example of the operation of the light-emitting device. FIGS. 14A to 14D are schematic diagrams illustrating examples of each region of an imaging unit provided in a light-emitting device. FIG. 15 is a flowchart showing an example of the operation of the light-emitting device. FIG. 16 is a cross-sectional view showing an example of the configuration of a display device. FIGS. 17A to 17D are schematic diagrams showing an example of the configuration of a light-emitting device. FIG. 18 is a cross-sectional view showing an example of the configuration of a display device. FIGS. 19A and 19B are cross-sectional views showing an example of the configuration of a display device. FIGS. 20A and 20B are cross-sectional views showing an example of the configuration of a display device. FIGS. 21A and 21B are cross-sectional views showing an example of the configuration of a display device. FIGS. 22A and 22B are cross-sectional views showing an example of the configuration of a display device. 23A to 23F are cross-sectional views showing an example of a method for manufacturing a display device. Fig. 24A is a circuit diagram showing a configuration example of a pixel circuit included in a display device, Fig. 24B is a perspective schematic diagram showing a configuration example of a pixel circuit included in a display device. Figs. 25A to 25D are circuit diagrams showing a configuration example of a pixel circuit included in a display device.26A to 26D are circuit diagrams showing configuration examples of pixel circuits included in a display device. FIGS. 27A and 27B are plan views showing configuration examples of light-emitting devices and light-receiving devices included in a display device. FIGS. 28A to 28D are cross-sectional schematic views showing configuration examples of light-emitting devices, light-receiving devices, and connection electrodes included in a display device. FIGS. 29A to 29G are plan views showing an example of a pixel. FIGS. 30A to 30F are plan views showing an example of a pixel. FIGS. 31A to 31H are plan views showing an example of a pixel. FIGS. 32A to 32D are plan views showing an example of a pixel. FIGS. 33A to 33D are plan views showing an example of a pixel, and FIG. 33E is a cross-sectional view showing an example of a display device. FIGS. 34A and 34B are diagrams showing configuration examples of a display module. FIGS. 35A to 35F are diagrams showing configuration examples of electronic devices. FIGS. 36A to 36D are diagrams showing configuration examples of electronic devices. FIGS. 37A to 37C are diagrams showing configuration examples of electronic devices.

[0020] In this specification, a semiconductor device is a device that utilizes semiconductor characteristics, and refers to a circuit including a semiconductor element (e.g., a transistor, a diode, and a photodiode), a device having such a circuit, etc. It also refers to any device that can function by utilizing semiconductor characteristics. For example, an integrated circuit, a chip including an integrated circuit, and an electronic component that houses a chip in a package are each an example of a semiconductor device. Furthermore, for example, a memory device, a display device, a light-emitting device, a lighting device, and an electronic device may themselves be a semiconductor device or may include a semiconductor device.

[0021] Furthermore, when it is stated in this specification that X and Y are connected, it is understood that the following cases are disclosed in this specification: when X and Y are electrically connected, when X and Y are functionally connected, and when X and Y are directly connected. Therefore, it is not limited to a specific connection relationship, for example, a connection relationship shown in a figure or text, and connection relationships other than those shown in a figure or text are also understood to be disclosed in a figure or text. X and Y are understood to be objects (e.g., a device, an element, a circuit, wiring, an electrode, a terminal, a conductive film, or a layer).

[0022] As an example of a case where X and Y are electrically connected, one or more elements (for example, a switch, a transistor, a capacitance element, an inductor, a resistance element, a diode, a display device, a light-emitting device, or a load) that enable the electrical connection between X and Y can be connected between X and Y. The switch has a function of controlling on / off. In other words, the switch has a function of being in a conductive state (on state) or a non-conductive state (off state) and controlling whether or not a current flows.

[0023] As an example of a case where X and Y are functionally connected, one or more circuits that enable the functional connection between X and Y (for example, a logic circuit (for example, an inverter, a NAND circuit, or a NOR circuit), a signal conversion circuit (for example, a digital-to-analog conversion circuit, an analog-to-digital conversion circuit, or a gamma correction circuit), a potential level conversion circuit (for example, a power supply circuit (a step-up circuit, a step-down circuit), or a level shifter circuit that changes the potential level of a signal), a voltage source, a current source, a switching circuit, an amplifier circuit (for example, a circuit that can increase the signal amplitude or amount of current, an operational amplifier, a differential amplifier circuit, a source follower circuit, or a buffer circuit), a signal generation circuit, a memory circuit, or a control circuit) can be connected between X and Y. As an example, even if another circuit is sandwiched between X and Y, if a signal output from X is transmitted to Y, X and Y are considered to be functionally connected.

[0024] It should be noted that when it is explicitly stated that X and Y are electrically connected, this includes the case where X and Y are electrically connected (i.e., the case where X and Y are connected with another element or another circuit sandwiched between them) and the case where X and Y are directly connected (i.e., the case where X and Y are connected without another element or another circuit sandwiched between them).

[0025] This specification also deals with a circuit configuration in which multiple elements are electrically connected to wiring (a wiring that supplies a constant potential or a wiring that transmits a signal). For example, if X and a wiring are directly connected and Y and the wiring are directly connected, this specification may state that X and Y are directly electrically connected.

[0026] Furthermore, for example, it can be expressed as follows: "X, Y, the source (sometimes referred to as either the first terminal or the second terminal) and the drain (sometimes referred to as the other of the first terminal or the second terminal) of the transistor are electrically connected to each other, and are electrically connected in the order of X, the source of the transistor, the drain of the transistor, and Y." Or, it can be expressed as follows: "The source of the transistor is electrically connected to X, the drain of the transistor is electrically connected to Y, and X, the source of the transistor, the drain of the transistor, and Y are electrically connected in this order." Or, it can be expressed as follows: "X is electrically connected to Y through the source and drain of the transistor, and X, the source of the transistor, the drain of the transistor, and Y are provided in this connection order." By using expressions similar to these examples to specify the order of connections in the circuit configuration, it is possible to distinguish between the source and drain of the transistor and determine the technical scope. Note that these expressions are merely examples and are not limiting. Here, X and Y are assumed to be objects (for example, a device, an element, a circuit, a wiring, an electrode, a terminal, a conductive film, or a layer).

[0027] Note that even when independent components are shown electrically connected to each other in a circuit diagram, one component may have the functions of multiple components. For example, if part of a wiring also functions as an electrode, one conductive film has the functions of both a wiring and an electrode. Therefore, the term "electrically connected" in this specification also includes such cases where one conductive film has the functions of multiple components.

[0028] Furthermore, in this specification, a "resistance element" can refer to, for example, a circuit element having a resistance value higher than 0Ω, a wiring having a resistance value higher than 0Ω, etc. Therefore, in this specification, a "resistance element" includes a wiring having a resistance value, a transistor in which a current flows between a source and a drain, a diode, a coil, etc. Therefore, the term "resistance element" can sometimes be replaced with terms such as "resistance," "load," or "region having a resistance value." Conversely, terms such as "resistance," "load," or "region having a resistance value" can sometimes be replaced with the term "resistance element." The resistance value can be, for example, preferably 1 mΩ or more and 10 Ω or less, more preferably 5 mΩ or more and 5 Ω or less, and even more preferably 10 mΩ or more and 1 Ω or less. Furthermore, for example, a resistance value can be replaced with a resistance value of 1 Ω or more and 1×10 ９ It may be set to Ω or less.

[0029] Furthermore, in this specification, a "capacitive element" can refer to, for example, a circuit element having a capacitance value higher than 0 F, a wiring region having a capacitance value higher than 0 F, a parasitic capacitance, a gate capacitance of a transistor, etc. Furthermore, terms such as "capacitive element," "parasitic capacitance," and "gate capacitance" can sometimes be replaced with terms such as "capacitance." Conversely, the term "capacitance" can sometimes be replaced with terms such as "capacitive element," "parasitic capacitance," or "gate capacitance." Furthermore, a "capacitance" (including a "capacitance" with three or more terminals) includes an insulator and a pair of conductors sandwiching the insulator. Therefore, the term "pair of conductors" in "capacitance" can be replaced with "pair of electrodes," "pair of conductive regions," "pair of regions," or "pair of terminals." Furthermore, the terms "one of the pair of terminals" and "the other of the pair of terminals" may be referred to as a first terminal, a second terminal, etc., respectively. The capacitance value can be, for example, 0.05 fF or more and 10 pF or less. It can also be, for example, 1 pF or more and 10 μF or less.

[0030] In this specification, a transistor has three terminals called a gate, a source, and a drain. The gate is a control terminal that controls the conduction state of the transistor. The two terminals that function as a source or a drain are input / output terminals of the transistor. One of the two input / output terminals serves as a source and the other as a drain depending on the conductivity type (n-channel or p-channel) of the transistor and the level of the potential applied to the three terminals of the transistor. Therefore, in this specification, terms such as source and drain may be interchangeable. In addition, in this specification, when describing the connection relationship of a transistor, the terms "one of the source or drain" (or first electrode or first terminal) and "the other of the source or drain" (or second electrode or second terminal) are used. Note that, depending on the structure of a transistor, a backgate may be included in addition to the three terminals described above. In this case, in this specification, one of the gate or backgate of the transistor may be referred to as a first gate, and the other of the gate or backgate of the transistor may be referred to as a second gate. Furthermore, for the same transistor, the terms "gate" and "backgate" may be interchangeable. Furthermore, when a transistor has three or more gates, the gates may be referred to as a first gate, a second gate, a third gate, and so on in this specification.

[0031] For example, in this specification, a transistor having a multi-gate structure with two or more gate electrodes can be used as an example of a transistor. In a multi-gate structure, the channel formation regions are connected in series, resulting in a structure in which multiple transistors are connected in series. Therefore, the multi-gate structure can reduce the off-state current and improve the breakdown voltage (reliability) of the transistor. Alternatively, when operating in the saturation region, the multi-gate structure can provide voltage-current characteristics with a flat slope, such that the current between the drain and source does not change significantly even when the voltage between the drain and source changes. By utilizing voltage-current characteristics with a flat slope, an ideal current source circuit or an active load with a very high resistance value can be realized. As a result, a differential circuit or a current mirror circuit with excellent characteristics can be realized.

[0032] Furthermore, in this specification, circuit elements such as a "light-emitting device" and a "light-receiving device" may have polarities referred to as an "anode" and a "cathode." In the case of a "light-emitting device," applying a forward bias (applying a positive potential relative to the "cathode" to the "anode") may cause the "light-emitting device" to emit light. In the case of a "light-receiving device," applying zero bias or a reverse bias (applying a negative potential relative to the "cathode" to the "anode") and irradiating the "light-receiving device" with light may generate a current between the "anode" and the "cathode." As described above, the "anode" and the "cathode" may be treated as input / output terminals in circuit elements such as a "light-emitting device" and a "light-receiving device." In this specification, the "anode" and the "cathode" in circuit elements such as a "light-emitting device" and a "light-receiving device" may be referred to as terminals (first terminal, second terminal, etc.). For example, one of the "anode" or the "cathode" may be referred to as a first terminal, and the other of the "anode" or the "cathode" may be referred to as a second terminal.

[0033] Furthermore, even when a single circuit element is shown on a circuit diagram, the circuit element may include multiple circuit elements. For example, when a single resistor is shown on a circuit diagram, this includes two or more resistors electrically connected in series. For example, when a single capacitor is shown on a circuit diagram, this includes two or more capacitors electrically connected in parallel. For example, when a single transistor is shown on a circuit diagram, this includes two or more transistors electrically connected in series, with the gates of the respective transistors electrically connected to each other. Similarly, when a single switch is shown on a circuit diagram, this includes two or more transistors, with the switch including two or more transistors electrically connected in series or parallel, and the gates of the respective transistors electrically connected to each other.

[0034] In this specification and the like, a node can be referred to as a terminal, a wiring, an electrode, a conductive layer, a conductor, or an impurity region depending on the circuit configuration and device structure. A terminal or a wiring can also be referred to as a node.

[0035] Furthermore, in this specification and the like, the terms "voltage" and "potential" can be interchanged as appropriate. "Voltage" refers to the potential difference from a reference potential. For example, if the reference potential is the ground potential (earth potential), then "voltage" can be interchanged with "potential." Note that ground potential does not necessarily mean 0 V. Furthermore, potential is relative, and as the reference potential changes, the potential applied to wiring, the potential applied to a circuit, etc., the potential output from a circuit, etc. also changes.

[0036] Furthermore, in this specification and the like, the terms "high-level potential" and "low-level potential" do not mean specific potentials. For example, when two wirings are both described as "functioning as wirings that supply a high-level potential," the high-level potentials provided by both wirings do not have to be equal to each other. Similarly, when two wirings are both described as "functioning as wirings that supply a low-level potential," the low-level potentials provided by both wirings do not have to be equal to each other.

[0037] Furthermore, "current" refers to the phenomenon of charge transfer (electrical conduction). For example, the statement "electrical conduction of a positively charged body is occurring" can be rephrased as "electrical conduction of a negatively charged body is occurring in the opposite direction." Therefore, in this specification, unless otherwise specified, "current" refers to the phenomenon of charge transfer (electrical conduction) associated with the movement of carriers. The carriers referred to here include, for example, electrons, holes, anions, cations, or complex ions, and the carriers differ depending on the system through which the current flows (e.g., semiconductor, metal, electrolyte, or vacuum). Furthermore, the "direction of current" in wiring, etc., refers to the direction in which positively charged carriers move and is expressed as a positive current amount. In other words, the direction in which negatively charged carriers move is opposite to the direction of current and is expressed as a negative current amount. Therefore, in this specification, etc., unless otherwise specified regarding the positive / negative sign of the current (or the direction of current), a statement such as "current flows from element A to element B" can be rephrased as "current flows from element B to element A" or the like. Furthermore, statements such as "current is input to element A" can be rephrased as "current is output from element A" or the like.

[0038] Furthermore, in this specification, the ordinal numbers "first," "second," and "third" are used to avoid confusion between components. Therefore, they do not limit the number of components. Furthermore, they do not limit the order of the components. For example, a component referred to as "first" in one embodiment of this specification may be a component referred to as "second" in another embodiment or in the claims. Furthermore, for example, a component referred to as "first" in one embodiment of this specification may be omitted in another embodiment or in the claims.

[0039] Furthermore, in this specification, terms indicating arrangement such as "above" or "below" may be used for convenience in describing the positional relationship between components with reference to the drawings. Furthermore, the positional relationship between components changes as appropriate depending on the direction in which each component is depicted. Therefore, the terms are not limited to those described in the specification, and can be rephrased appropriately depending on the situation. For example, the expression "insulator located on the upper surface of a conductor" can be rephrased as "insulator located on the lower surface of a conductor" by rotating the orientation of the drawing by 180 degrees.

[0040] Furthermore, the terms "above" and "below" do not limit the positional relationship of components to being directly above or below and in direct contact with each other. For example, the expression "electrode B on insulating layer A" does not necessarily mean that electrode B is formed in direct contact with insulating layer A, and does not exclude cases where other components are included between insulating layer A and electrode B. Similarly, the expression "electrode B above insulating layer A" does not necessarily mean that electrode B is formed in direct contact with insulating layer A, and does not exclude cases where other components are included between insulating layer A and electrode B. Similarly, the expression "electrode B below insulating layer A" does not necessarily mean that electrode B is formed in direct contact below insulating layer A, and does not exclude cases where other components are included between insulating layer A and electrode B.

[0041] Furthermore, in this specification, terms such as "row" and "column" may be used to describe components arranged in a matrix and their positional relationships. Furthermore, the positional relationships between components change as appropriate depending on the direction in which each component is depicted. Therefore, the terms are not limited to those used in the specification, and may be rephrased appropriately depending on the situation. For example, the expression "row direction" may be rephrased as "column direction" by rotating the orientation of the drawing by 90 degrees.

[0042] Furthermore, in this specification and the like, terms such as "film" or "layer" can be interchanged depending on the situation. For example, the term "conductive layer" may be interchanged with the term "conductive film." Or, for example, the term "insulating film" may be interchanged with the term "insulating layer." Or, in some cases or depending on the situation, terms such as "film" or "layer" may not be used and may be interchanged with another term. For example, the term "conductive layer" or "conductive film" may be interchanged with the term "conductor." Or, for example, the term "insulating layer" or "insulating film" may be interchanged with the term "insulator."

[0043] Furthermore, in this specification and the like, terms such as "electrode," "wiring," or "terminal" do not limit the functionality of these components. For example, an "electrode" may be used as part of a "wiring," and vice versa. Furthermore, terms such as "electrode" or "wiring" include cases where multiple "electrodes" or "wirings" are integrally formed. Furthermore, for example, a "terminal" may be used as part of a "wiring" or "electrode," and vice versa. Furthermore, the term "terminal" includes cases where multiple "electrodes," "wirings," or "terminals" are integrally formed. Therefore, for example, an "electrode" can be part of a "wiring" or "terminal," and a "terminal" can be part of a "wiring" or "electrode." Furthermore, terms such as "electrode," "wiring," or "terminal" may be replaced with terms such as "region" in some cases.

[0044] Furthermore, in this specification and the like, terms such as "wiring," "signal line," or "power line" may be interchangeable depending on the circumstances. For example, the term "wiring" may be changed to the term "signal line." For example, the term "wiring" may be changed to a term such as "power line." Vice versa, terms such as "signal line" or "power line" may be changed to the term "wiring." Terms such as "power line" may be changed to a term such as "signal line." Vice versa, terms such as "signal line" may be changed to a term such as "power line." Furthermore, the term "potential" applied to a wiring may be changed to a term such as "signal" depending on the circumstances. Vice versa, terms such as "signal" may be changed to a term such as "potential."

[0045] In this specification and the like, a metal oxide refers to an oxide of a metal in a broad sense. Metal oxides are classified into oxide insulators, oxide conductors (including transparent oxide conductors), oxide semiconductors (also referred to as oxide semiconductors or simply as OSs), and the like. For example, when a metal oxide is contained in a channel formation region of a transistor, the metal oxide may be referred to as an oxide semiconductor. In other words, when a metal oxide can form a channel formation region of a transistor having at least one of an amplifying function, a rectifying function, and a switching function, the metal oxide can be referred to as a metal oxide semiconductor. Furthermore, an OS transistor can be referred to as a transistor including a metal oxide or an oxide semiconductor.

[0046] In this specification and the like, nitrogen-containing metal oxides may also be collectively referred to as metal oxides. Nitrogen-containing metal oxides may also be referred to as metal oxynitrides.

[0047] In this specification and the like, the term "impurities" in a semiconductor refers to, for example, elements other than the main component constituting the semiconductor layer. For example, an element having a concentration of less than 0.1 atomic % is an impurity. The presence of impurities may cause, for example, an increase in the defect level density of the semiconductor, a decrease in carrier mobility, a decrease in crystallinity, and the like. When the semiconductor is an oxide semiconductor, impurities that change the characteristics of the semiconductor include, for example, Group 1 elements, Group 2 elements, Group 13 elements, Group 14 elements, Group 15 elements, and transition metals other than the main component, and in particular, for example, hydrogen (also contained in water), lithium, sodium, silicon, boron, phosphorus, carbon, nitrogen, and the like.

[0048] In this specification, a switch refers to a device that can be in a conductive state (on state) or a non-conductive state (off state) and has the function of controlling whether or not a current flows. Alternatively, a switch refers to a device that has the function of selecting and switching a path through which a current flows. Therefore, a switch may have two or more terminals through which a current flows, in addition to a control terminal. As an example, an electrical switch, a mechanical switch, or the like can be used. In other words, the switch is not limited to a specific type as long as it can control a current.

[0049] Examples of electrical switches include transistors (e.g., bipolar transistors, MOS transistors, etc.), diodes (e.g., PN diodes, PIN diodes, Schottky diodes, MIM (Metal Insulator Metal) diodes, MIS (Metal Insulator Semiconductor) diodes, diode-connected transistors, etc.), and logic circuits combining these. When a transistor is used as a switch, the "conductive state" of the transistor refers to, for example, a state in which the source electrode and drain electrode of the transistor can be considered to be electrically short-circuited, or a state in which current can flow between the source electrode and drain electrode. The "non-conductive state" of the transistor refers to a state in which the source electrode and drain electrode of the transistor can be considered to be electrically disconnected. When a transistor is operated simply as a switch, the polarity (conductivity type) of the transistor is not particularly limited.

[0050] An example of a mechanical switch is a switch that uses MEMS (microelectromechanical systems) technology. This switch has a mechanically movable electrode, and the movement of the electrode controls conduction and non-conduction.

[0051] In this specification, etc., a device fabricated using a metal mask or an FMM (fine metal mask, high-resolution metal mask) may be referred to as a device with an MM (metal mask) structure. In this specification, etc., a device fabricated without using a metal mask or an FMM may be referred to as a device with an MML (metal maskless) structure.

[0052] In this specification and the like, a structure in which different light-emitting layers are formed or different light-emitting layers are painted for each color light-emitting device (here, blue (B), green (G), and red (R)) may be referred to as an SBS (Side By Side) structure. In this specification and the like, a light-emitting device that can emit white light may be referred to as a white light-emitting device. In addition, a white light-emitting device can be combined with a colored layer (e.g., a color filter) to form a full-color display device.

[0053] Light-emitting devices can be broadly divided into single structures and tandem structures. A single-structure device preferably has one light-emitting unit between a pair of electrodes, and the light-emitting unit includes one or more light-emitting layers. When two light-emitting layers are used to obtain white light emission, the light-emitting layers may be selected so that the emission colors of the two light-emitting layers are complementary to each other. For example, by making the emission color of the first light-emitting layer and the emission color of the second light-emitting layer complementary to each other, a configuration in which the light-emitting device as a whole emits white light can be obtained. When three or more light-emitting layers are used to obtain white light emission, the emission colors of the three or more light-emitting layers may be combined to produce a configuration in which the light-emitting device as a whole emits white light.

[0054] A tandem-structure device preferably has two or more light-emitting units between a pair of electrodes, and each light-emitting unit preferably includes one or more light-emitting layers. To obtain white light emission, light from the light-emitting layers of the light-emitting units may be combined to obtain white light emission. The configuration for obtaining white light emission is the same as that of the single-structure device. In a tandem-structure device, it is preferable to provide an intermediate layer such as a charge-generating layer between the light-emitting units.

[0055] Furthermore, when comparing the above-described white light-emitting device (single structure or tandem structure) with a light-emitting device having an SBS structure, the light-emitting device having an SBS structure can reduce power consumption compared to the white light-emitting device. If it is desired to reduce power consumption, it is preferable to use a light-emitting device having an SBS structure. On the other hand, the manufacturing process of a white light-emitting device is simpler than that of a light-emitting device having an SBS structure, and therefore the manufacturing cost can be reduced or the manufacturing yield can be increased, making it preferable.

[0056] In this specification, "parallel" refers to a state in which two straight lines are arranged at an angle of -10° or more and 10° or less. Therefore, it also includes cases where the angle is -5° or more and 5° or less. Furthermore, "substantially parallel" or "roughly parallel" refers to a state in which two straight lines are arranged at an angle of -30° or more and 30° or less. Furthermore, "perpendicular" refers to a state in which two straight lines are arranged at an angle of 80° or more and 100° or less. Therefore, it also includes cases where the angle is 85° or more and 95° or less. Furthermore, "substantially perpendicular" or "approximately perpendicular" refers to a state in which two straight lines are arranged at an angle of 60° or more and 120° or less.

[0057] In this specification and the like, the configurations shown in each embodiment can be appropriately combined with the configurations shown in other embodiments to form one aspect of the present invention. In addition, when multiple configuration examples are shown in one embodiment, the configuration examples can be appropriately combined with each other.

[0058] In addition, the content (or even a part of the content) described in one embodiment can be applied, combined, or replaced with at least one of another content (or even a part of the content) described in that embodiment and one or more other content (or even a part of the content) described in another embodiment.

[0059] The contents described in the embodiments refer to the contents described in each embodiment using various figures or the contents described using text in the specification.

[0060] Furthermore, a figure (or even a part thereof) described in one embodiment can be combined with another part of that figure, another figure (or even a part thereof) described in that embodiment, and at least one figure (or even a part thereof) described in one or more other embodiments to form even more figures.

[0061] The embodiments described in this specification are described with reference to the drawings. However, it will be readily understood by those skilled in the art that the embodiments can be implemented in many different ways, and that various changes in form and details can be made without departing from the spirit and scope of the invention. Therefore, the present invention should not be interpreted as being limited to the description of the embodiments. Note that in the configuration of the invention of the embodiments, the same reference numerals are used in different drawings for the same parts or parts having similar functions, and repeated description thereof may be omitted. Also, in perspective views and the like, the description of some components may be omitted to ensure clarity of the drawings.

[0062] In addition, in the drawings of this specification, plan views may be used to explain the configuration of each embodiment. A plan view, for example, may be a view showing a configuration viewed from a direction perpendicular to a horizontal plane, or a view showing a horizontally cut surface (cut surface) of the configuration (either of these may be referred to as a plan view). Hidden lines (e.g., dashed lines) may be included in the plan view to indicate the relative positions of multiple elements included in the configuration or the overlapping relationship of the multiple elements. Note that in this specification, the term "plan view" may be interchangeable with the terms "projection view," "top view," or "bottom view." Depending on the situation, a plan view may refer to a cut surface (cut surface) of a configuration cut in a direction other than the horizontal direction, rather than a horizontally cut surface (cut surface).

[0063] In addition, in the drawings of this specification, cross-sectional views may be used to explain the configuration of each embodiment. A cross-sectional view, for example, is a view showing a surface of a configuration viewed from a direction perpendicular to a horizontal plane, or a view showing a surface (cut) of a configuration cut in the vertical direction (either surface may be referred to as a cross-sectional view). Note that in this specification, the term "cross-sectional view" may be replaced with the terms "front view" or "side view." Depending on the situation, a cross-sectional view may refer to a surface (cut) of a configuration cut in a direction other than the vertical direction, rather than a surface (cut) cut in the vertical direction.

[0064] In this specification, when the same reference numeral is used for multiple elements, and particularly when it is necessary to distinguish between them, an identification symbol such as "_1", "[n]", "[m, n]" may be added to the reference numeral. Also, when an identification symbol such as "_1", "[n]", "[m, n]" is added to the reference numeral in the drawings, etc., the identification symbol may not be added if it is not necessary to distinguish between them in this specification.

[0065] In addition, in the drawings of this specification, the size, layer thickness, or region may be exaggerated for clarity. Therefore, the drawings are not necessarily limited to the scale. Note that the drawings are schematic illustrations of ideal examples, and are not limited to the shapes or values ​​shown in the drawings. For example, variations in signals, voltages, or currents due to noise, or variations in signals, voltages, or currents due to timing differences may be included.

[0066] 1A illustrates a display device according to one embodiment of the present invention. The display device DSP includes a display portion DIS, which is divided into a plurality of display regions.

[0067] As an example, the display unit DIS is divided into display areas of m rows and n columns (m is an integer greater than or equal to 1, and n is an integer greater than or equal to 1). Therefore, the display unit DIS has areas ARA[1,1] to ARA[m,n]. Note that FIG. 1A shows, as an example, the display unit DIS when m = 9 and n = 9 (when divided into display areas of 9 rows and 9 columns). Also, FIG. 1A shows, as an example, the respective symbols of areas ARA[1,1], ARA[m,1], ARA[1,n], and ARA[m,n].

[0068] Each of the areas ARA[1,1] to ARA[m,n] includes, for example, a plurality of display pixels and a plurality of imaging pixels arranged in a matrix. The display pixels and imaging pixels will be described later. Each of the areas ARA[1,1] to ARA[m,n] may also include a plurality of light-emitting pixels that function as imaging light sources.

[0069] In particular, the display pixels included in each divided area ARA are driven by a display drive circuit (e.g., a gate driver circuit and a source driver circuit) corresponding to that area ARA. In other words, the display device DSP in Fig. 1A is configured such that a display drive circuit is provided for each of the multiple areas ARA.

[0070] Furthermore, the imaging pixels included in each divided area ARA are driven by an imaging drive circuit (e.g., a circuit for transmitting a trigger signal for imaging and a circuit for selecting imaging pixels) corresponding to that area ARA. In other words, the display device DSP in Fig. 1A is configured such that an imaging drive circuit is provided for each of the multiple areas ARA.

[0071] 1A , the area ARA[1,1] to the area ARA[1,n] provided in the first row of the display unit DIS, the area ARA[m,1] to the area ARA[m,n] provided in the mth row of the display unit DIS, the area ARA[2,1] to the area ARA[m-1,1] provided in the first column of the display unit DIS, and the area ARA[2,n] to the area ARA[m-1,n] provided in the nth column of the display unit DIS constitute the image-capturing light source area LEA, and the remaining area ARA of the display unit DIS constitutes the image-capturing area MA.

[0072] 1A, the image capturing light source area LEA is set in the area ARA located along the four sides of the display unit DIS, and the image capturing area MA is set in the remaining area ARA of the display unit DIS. In other words, the image capturing light source area LEA is in the shape of a square frame, and the image capturing area MA is set inside the frame.

[0073] The imaging area MA functions as an area for capturing an image of a subject, for example, using imaging pixels in multiple areas ARA included in the imaging area MA. The imaging area MA may also function as an area for displaying an image, for example, using display pixels in multiple areas ARA included in the imaging area MA. For example, the imaging area MA in the display device DSP provided in the electronic device shown in FIGS. 2A and 2B (described later), and the imaging area MA in the light-emitting device ISP provided in electronic devices such as the smartphone SMP (described later) (FIGS. 11D and 11E) preferably functions as an area for capturing an image as well as an area for displaying an image. On the other hand, for example, the imaging area MA in the light-emitting device ISP provided in the electronic device shown in FIGS. 11A to 11C may function as an area for capturing an image of a subject, but not as an area for displaying an image.

[0074] The imaging light source area LEA functions as an area that emits light necessary for imaging operations by imaging pixels in a plurality of areas ARA included in the imaging area MA. The circuit that emits the light can be a display pixel. When the area ARA of the imaging light source area LEA includes display pixels and light-emitting pixels, the circuit that emits the light can be a light-emitting pixel.

[0075] In addition, in a display device according to one embodiment of the present invention, an imaging region MA of the display unit DIS may be determined first, and then an imaging light source region LEA may be set in the remaining region of the display unit DIS. In this case, the imaging region MA is preferably set to overlap with the center CSB of the display unit DIS, as shown in FIG. 1A . Therefore, the display device DSP preferably has a region where the center CSB of the display unit DIS and some of the regions ARA included in the imaging region MA overlap with each other.

[0076] In this specification, the center of the display unit DIS refers to the area including the point where two diagonals are drawn on the display unit DIS and the two diagonals intersect. Specifically, the center of the display unit DIS can be a circular area centered on the point where the two diagonals intersect. When the length of the diagonal (diagonal size) of the display unit DIS is L, the radius of the circle is preferably L / 8 or less, more preferably L / 16 or less, even more preferably L / 32 or less, even more preferably L / 64 or less, and even more preferably L / 128 or less.

[0077] For example, if a display device DSP with a diagonal size L and a display screen ratio (aspect ratio) of 16:9 has a display unit DIS divided into regions with 4 rows and 8 columns, the radius of the central circle may be set to L / 8 or less.Furthermore, if a display device DSP with a diagonal size L and a display screen ratio (aspect ratio) of 16:9 has a display unit DIS divided into regions with 8 rows and 16 columns, the radius of the central circle may be set to L / 16 or less.

[0078] As a result, the shape of the image capturing light source area LEA is not limited to that shown in FIG. 1A, and various shapes can be used.

[0079] <Eye Tracking> Now, consider an electronic device (head-mounted display) that is a VR device equipped with a display device DSP.

[0080] By providing the electronic device with a display device DSP, the display device DSP can capture an image of the eyes of a user wearing the electronic device. Also, capturing an image of the user's eyes can enable eye tracking in the electronic device.

[0081] For example, as shown in Figure 1B, by positioning the display device DSP so that the display unit DIS of the display device DSP overlaps the user's eye ME in the front view, it becomes possible for the display device DSP provided in the electronic device to capture an image of the user's eye ME.

[0082] At this time, it is preferable that the image of the user's eye ME is captured in the imaging area MA by imaging pixels in a plurality of areas ARA included in the imaging area MA. In addition, in this imaging, the imaging light source may be a display pixel or a light-emitting pixel included in the imaging light source area LEA.

[0083] 1B , in the front view, the image capturing light source area LEA is set so as to surround the user's eye ME with the display unit DIS, and thus the image capturing light LIG can be irradiated from the image capturing light source area LEA to the user's eye ME located inside the image capturing light source area LEA. Furthermore, in the front view, since the image capturing light source area LEA surrounds the user's eye ME, multiple light beams LIG from the image capturing light source area LEA are irradiated toward the center of the user's eye ME. This allows the light LIG to be evenly irradiated onto the user's eye ME, making it less likely that a shadow will be created.

[0084] 1C, an imaging light source area LEA may be provided at the right end of the display unit DIS in the front view. In this case, the imaging area MA is wider than in FIG. 1B, and therefore the image display by the display pixels included in the area ARA of the imaging area MA can be made larger.

[0085] On the other hand, as shown in FIG. 1C , when the imaging light source area LEA is set at the right end of the display unit DIS, the distance between the right side of the user's eye ME and the imaging light source area LEA becomes shorter, making it easier for light LIG from the imaging light source area LEA to be irradiated onto the right side of the user's eye ME. Conversely, the distance between the left side of the user's eye ME and the imaging light source area LEA becomes longer, making it harder for light LIG from the imaging light source area LEA to be irradiated onto the left side of the user's eye ME. In other words, the amount of light (sometimes referred to as light intensity) irradiated from the imaging light source area LEA differs between the right and left sides of the user's eye ME. Also, as shown in FIG. 1C , when the imaging light source area LEA is set at the right end of the display unit DIS, unlike FIG. 1B , an area (shadow) where light LIG is not irradiated may occur. For this reason, if it is desired to clearly image the user's eye ME, it is preferable to configure the imaging light source area LEA in the shape of FIG. 1B .

[0086] 1B , by setting the image capturing light source area LEA so that the display unit DIS surrounds the user's eye ME in the front view, the light of the image capturing light source area LEA can be irradiated almost uniformly onto the area of ​​the user's eye ME, and the user's eye ME can be clearly imaged. By clearly imaging the user's eye ME, highly accurate eye tracking can be achieved.

[0087] As an imaging method, it is preferable that the display device DSP uses a method in which all imaging pixels in multiple areas ARA included in the imaging area MA capture images simultaneously (sometimes called a global shutter method). Alternatively, it may use a method in which multiple areas ARA included in the imaging area MA are sequentially selected and imaged. In this method, multiple imaging pixels in the areas ARA included in the imaging area MA may capture images simultaneously or sequentially. In addition, when sequential imaging is performed, it is preferable that the frame frequency for imaging is high.

[0088] <Configuration Example of Electronic Device> FIG. 2A shows, for example, an electronic device HMD, which is a head-mounted display that is a type of VR device equipped with a display device DSP.

[0089] The electronic device HMD, for example, has a housing KYT. The housing KYT has a shape that allows it to be worn on a human head. The housing KYT is provided with display devices DSP_L and DSP_R, which correspond to the display device DSP described above.

[0090] Specifically, the display device DSP_L is provided on the housing KYT so as to be positioned in front of the left eye ME_L of the user wearing the electronic device HMD. That is, when viewed from the front, the user's left eye ME_L and the display device DSP_L have overlapping areas. Furthermore, the display device DSP_R is provided on the housing KYT so as to be positioned in front of the right eye of the user wearing the electronic device HMD. That is, when viewed from the front, the user's right eye ME_R and the display device DSP_R have overlapping areas.

[0091] Furthermore, when eye tracking is performed in the electronic device HMD, as shown in FIG. 2A, the gaze of the user's left eye and right eye can be tracked by both the display device DSP_L and the display device DSP_R.

[0092] Furthermore, eye tracking performed by the electronic device HMD may be performed on either the left or right eye, rather than on both eyes. For example, if eye tracking is desired for the left eye, as shown in FIG. 2B , an image capturing light source area LEA may be provided in the display unit DIS of the display device DSP_L, and the left eye may be captured using the imaging pixels included in the imaging area MA. In this case, the image capturing light source area LEA may not be provided in the display unit DIS of the display device DSP_R, and the entire display unit DIS may be used as the imaging area MA.

[0093] Although FIG. 2B shows the case where eye tracking is performed on the left eye, eye tracking may be performed on the right eye by interchanging the display device DSP_L and the display device DSP_R.

[0094] <Image Display Due to Differences in Image Capturing Light Sources> Here, differences in images displayed on the display device DSP due to differences in image capturing light sources will be described.

[0095] 3A shows an image displayed in the imaging area MA of the display unit DIS when the image capturing light source area LEA is not provided in the display unit DIS (when no image capturing is performed). Note that, as an example, an automobile is displayed in the imaging area MA of FIG.

[0096] Next, consider a case where the light emitted from the imaging light source area LEA in the display device DSP is visible light. That is, consider a case where the display pixels or light-emitting pixels included in the area ARA of the imaging light source area LEA are circuits that emit visible light. In this case, the imaging pixels included in the area ARA of the imaging area MA have light-receiving devices that receive visible light.

[0097] 1A , an area ARA located along the four sides of the display unit DIS is used as an image capturing light source area LEA, and therefore the area in which an image can be displayed on the display unit DIS is the remaining image capturing area MA. In particular, since the display pixels or light emitting pixels included in the area ARA located along the four sides of the display unit DIS function as a light source for image capturing, it is difficult to display an image in the image capturing light source area LEA.

[0098] For this reason, the imaging area MA in the display unit DIS in Fig. 1A is smaller than the imaging area MA in the display unit DIS in Fig. 3A. For example, if the same image as in Fig. 3A is displayed on the display device DSP in Fig. 1A, the result will be as shown in Fig. 3B. In other words, the image displayed in the imaging area MA of the display unit DIS in which the imaging light source area LEA in Fig. 1A is set will be reduced in size compared to the image displayed on the display unit DIS in Fig. 3A.

[0099] On the other hand, consider a case where the light emitted from the imaging light source area LEA in the display device DSP is infrared light (sometimes referred to as IR). In this case, the area ARA of the imaging light source area LEA includes a plurality of light-emitting pixels that emit infrared light. In this case, the imaging pixels included in the area ARA of the imaging area MA include light-receiving devices that receive infrared light.

[0100] Since infrared rays are invisible light rays, the user's eye ME cannot perceive infrared rays. Therefore, when light that is a mixture of visible light rays and invisible light rays is incident on the user's eye ME, the user's eye ME can perceive only visible light rays.

[0101] For example, in the display device DSP of Figure 1A, light corresponding to an image is emitted from the display pixels included in area ARA of the imaging light source area LEA, and infrared light is similarly emitted from the light-emitting pixels included in area ARA, so that the user's eye ME can perceive only the light from the display pixels.

[0102] Therefore, if the light emitted from the imaging light source area LEA is infrared, an image can be displayed in the imaging light source area LEA. For example, if the same image as in Fig. 3A is displayed on the display device DSP of Fig. 1A in this case, the image will be as shown in Fig. 3C. In other words, the display unit DIS in which the imaging light source area LEA of Fig. 1A is set can display an image of the same size as in Fig. 3A.

[0103] <Shape of the imaging light source area LEA> FIG. 1A illustrates an example in which the area ARA located along the four sides of the display unit DIS of the display device DSP is used as the imaging light source area LEA. However, the area in which the imaging light source area LEA is set in the display unit DIS of the display device DSP of one embodiment of the present invention is not limited to that illustrated in FIG. 1A .

[0104] For example, the imaging light source area LEA set in the display unit DIS of the display device DSP may be the area ARA[1,1] to area ARA[1,n] provided on the first row of the display unit DIS, and the area ARA[m,1] to area ARA[m,n] provided on the mth row of the display unit DIS, as shown in Figure 4A.

[0105] Furthermore, for example, the imaging light source area LEA set in the display unit DIS of the display device DSP may be the area ARA[1,1] to area ARA[m,1] provided in the first column of the display unit DIS, and the area ARA[1,n] to area ARA[m,n] provided in the nth column of the display unit DIS, as shown in Figure 4B.

[0106] Furthermore, for example, the image capturing light source area LEA set in the display unit DIS of the display device DSP may be an area ARA at a corner of the display unit DIS and its surrounding area ARA. Specifically, for example, as shown in Figure 4C, the image capturing light source area LEA may be the area ARA[1,1], area ARA[m,1], area ARA[1,n], area ARA[m,n] of the display unit DIS, and their surrounding areas ARA.

[0107] Furthermore, for example, the image capturing light source area LEA set in the display unit DIS of the display device DSP may have a shape that combines the image capturing light source areas LEA shown in Fig. 4A to Fig. 4C. For example, as shown in Fig. 4D, the image capturing light source area LEA may be the areas ARA[1,1] to ARA[1,n] provided in the first row of the display unit DIS, the area ARA[m,1] and its surrounding area ARA, and the area ARA[m,n] and its surrounding area ARA.

[0108] 4A to 4D, the image capturing light source area LEA set in the display unit DIS of the display device DSP does not have to be set in the peripheral area ARA of the display unit DIS. For example, as shown in FIG. 4E, the peripheral and central areas ARA of the display unit DIS may be set as the image capturing area MA, and the remaining area ARA may be set as the image capturing light source area LEA.

[0109] 4A to 4D is applied to the arrangement of the imaging area MA and the imaging light source area LEA of the display device DSP, the imaging method is preferably a global shutter method in which all imaging pixels of the multiple areas ARA included in the imaging area MA capture images simultaneously, or a method in which multiple areas ARA included in the imaging area MA are sequentially selected and captured may be used.

[0110] <Display Pixels, Image Capturing Pixels, and Light Emitting Pixels> Fig. 5A is a block diagram showing display pixels and image capturing pixels that can be provided in an area ARA of the display device DSP. A circuit AP shown in Fig. 5A has a circuit PX and a circuit PV.

[0111] The circuit PX functions as a display pixel, for example. The display pixel may be a pixel to which at least one of a liquid crystal display device and a light-emitting device is applied, for example. Examples of the light-emitting device include a light-emitting device containing an organic EL material and an LED (including a micro LED). In this embodiment, the circuit PX is described as being applied with a light-emitting device containing an organic EL material. The brightness of light emitted from a light-emitting device capable of emitting particularly high brightness light is, for example, 500 cd / m ２ or more, preferably 1000 cd / m ２ More than 10000cd / m ２ More preferably, 2000 cd / m or less ２ More than 5000cd / m ２ The following can be done: Note that a configuration of a display pixel that can be applied to the circuit PX or the like will be described in detail in Embodiment Mode 3.

[0112] The circuit PV functions as, for example, an imaging pixel. The imaging pixel has, for example, a light receiving device that functions as an imaging device.

[0113] The circuit PX is electrically connected to, for example, a wiring SL, a wiring GL, and a wiring CT1.

[0114] The wiring SL functions as, for example, a wiring that transmits image data signals to the circuit PX. Alternatively, the wiring SL may be, for example, a wiring that applies a constant potential or a variable potential (for example, a pulse voltage).

[0115] The wiring GL functions as, for example, a wiring that transmits a selection signal for selecting a circuit PX that is a supply destination of an image data signal. Alternatively, the wiring GL may be, for example, a wiring that applies a constant potential.

[0116] The wiring CT1 functions as, for example, a wiring that applies a constant potential to the circuit PX. Furthermore, as an example, the wiring CT1 is electrically connected to a terminal of a light-emitting device included in the circuit PX. In this case, the constant potential is preferably, for example, a ground potential or a negative potential. Alternatively, the wiring CT1 may be, for example, a wiring that applies a variable potential (for example, a pulse voltage).

[0117] The circuit PV is electrically connected to, for example, a wiring TX, a wiring RS, a wiring SE, a wiring OL, and a wiring CT2.

[0118] The wiring TX functions as, for example, a wiring that transmits a trigger signal for causing a light-receiving device included in the circuit PV to capture an image. Alternatively, the wiring TX may be, for example, a wiring that applies a constant potential.

[0119] The wiring RS functions as, for example, a wiring that transmits a trigger signal for erasing image data captured by a light-receiving device included in the circuit PV. Note that the erasing of image data can be rephrased as, for example, an initialization operation of a potential corresponding to the image data stored in the circuit PV in order to perform new image capture in the circuit PV. Alternatively, the wiring RS may be, for example, a wiring that applies a constant potential.

[0120] The wiring SE functions as, for example, a wiring that transmits a trigger signal for reading out image data captured by a light receiving device included in the circuit PV. Alternatively, the wiring SE may function as, for example, a wiring that applies a constant potential.

[0121] The wiring OL functions as, for example, a wiring that transmits image data captured by a light-receiving device included in the circuit PV as a signal, or may be a wiring that applies, for example, a constant potential or a variable potential (for example, a pulse voltage).

[0122] The wiring CT2 functions as a wiring that applies a constant potential to the circuit PV. The wiring CT2 is electrically connected to, for example, a terminal of a light receiving device included in the circuit PV.

[0123] 5A illustrates various wirings, wirings other than the wirings SL, GL, TX, RS, SE, OL, CT1, and CT2 may be electrically connected to one or both of the circuit PX and the circuit PV. For example, although not illustrated in FIG. 5A, wirings that apply a power supply voltage for driving one or both of the circuit PX and the circuit PV may be electrically connected to the circuit AP.

[0124] Furthermore, at least one of the various wirings shown in Fig. 5A may be two or more instead of one. For example, the wiring GL shown in Fig. 5A may be two or more instead of one. Furthermore, for example, the wiring RS shown in Fig. 5A may be two or more instead of one.

[0125] 5A shows a configuration of a circuit AP including a circuit PX that functions as a display pixel and a circuit PV that functions as an imaging pixel, but the circuit AP may also include a light-emitting element that functions as an imaging light source. For example, as shown in FIG. 5B, the circuit AP may also include a circuit PX_L that has a light-emitting element that functions as an imaging light source, in addition to the circuit PX and the circuit PV.

[0126] The circuit PX_L includes, for example, a light-emitting device. For example, if the light-receiving device included in the circuit PV has a function of receiving white light, the light-emitting device is preferably a device that emits white light. Also, for example, if the light-receiving device included in the circuit PV has a function of receiving infrared light, the light-emitting device is preferably a device that emits infrared light.

[0127] The circuit PX_L is electrically connected to, for example, a wiring PWL, a wiring FS, and a wiring CT1.

[0128] The wiring PWL functions as, for example, a wiring that applies a constant potential or a constant current to a light-emitting device included in the circuit PX_L.

[0129] The wiring CT1 functions as a wiring that applies a constant potential to the circuit PX_L, similar to the circuit PX, for example. In addition, the wiring CT1 is, for example, electrically connected to a terminal of a light-emitting device included in the circuit PX_L.

[0130] The wiring FS functions as a wiring through which a trigger signal for causing a light-emitting device included in the circuit PX_L to emit light is transmitted when imaging is performed in the circuit PV. For example, the circuit PX_L can be configured such that, when a trigger signal is applied to the wiring FS, a constant potential or a constant current is applied from the wiring PWL to the light-emitting device included in the circuit PX_L, causing the light-emitting device to emit light.

[0131] If the light-receiving device included in the circuit PV has a function of receiving white light, the circuit PX may be used as a light source for imaging rather than a display pixel. In other words, in this case, the circuit AP may be configured without the circuit PX_L, which is a light source for imaging, as shown in FIG. 5A.

[0132] 5A shows a configuration in which the circuit AP includes one circuit PX as a display pixel, but the circuit AP may include multiple display pixels. In particular, the multiple display pixels may be, for example, three colors: red (R), green (G), and blue (B). Alternatively, the multiple display pixels may be four or more colors, for example, by adding at least one color selected from cyan (C), magenta (M), yellow (Y), and white (W) to the above-mentioned three colors: red (R), green (G), and blue (B). Each display pixel that expresses a different color is referred to as a sub-display pixel. When white is expressed using multiple sub-display pixels of different colors, the multiple sub-display pixels may be collectively referred to as a display pixel.

[0133] 5C shows, as an example, the configuration of a circuit AP having three display pixels: a circuit PX_R that is a red (R) display pixel, a circuit PX_G that is a green (G) display pixel, and a circuit PX_B that is a blue (B) display pixel. Also shown in FIG. 5C are wirings SL_R, SL_G, and SL_B that correspond to the wiring SL in FIG. 5A. The wiring SL_R is electrically connected to the circuit PX_R, as an example, the wiring SL_G is electrically connected to the circuit PX_G, and the wiring SL_B is electrically connected to the circuit PX_B, as an example.

[0134] The arrangement order of the display pixels and imaging pixels is not limited to the order shown in FIG. 5C, and may be changed depending on the situation.

[0135] Furthermore, in the circuit AP of FIG. 5C, if an imaging light source separate from the circuits PX_R, PX_G, and PX_B is required, the circuit AP of FIG. 5C may be provided with the above-mentioned circuit PX_L, as shown in FIG. 5D.

[0136] <Configuration Example of Display Device> Next, a specific configuration example of the display device DSP of Fig. 1A will be described. Fig. 6A is a schematic cross-sectional view of the display device DSP of Fig. 1A. The display device DSP has, as an example, a pixel layer PXAL, a wiring layer LINL, and a circuit layer SICL.

[0137] The wiring layer LINL is provided on the circuit layer SICL, and the pixel layer PXAL is provided on the wiring layer LINL. The pixel layer PXAL overlaps a region including a drive circuit region DRV, which will be described later.

[0138] The circuit layer SICL has a substrate BS and a drive circuit region DRV.

[0139] The substrate BS can be, for example, a semiconductor substrate (e.g., a single-crystal substrate made of silicon or germanium). In addition to semiconductor substrates, the substrate BS can also be, for example, an SOI (Silicon-On-Insulator) substrate, a glass substrate, a quartz substrate, a plastic substrate, a sapphire glass substrate, a metal substrate, a stainless steel substrate, a substrate having stainless steel foil, a tungsten substrate, a substrate having tungsten foil, a flexible substrate, a laminated film, paper containing a fibrous material, or a base film. Examples of glass substrates include barium borosilicate glass, aluminoborosilicate glass, and soda-lime glass. Examples of flexible substrates, laminated films, or base films include plastics such as polyethylene terephthalate (PET), polyethylene naphthalate (PEN), polyethersulfone (PES), and polytetrafluoroethylene (PTFE). Another example is a synthetic resin such as an acrylic resin. Other examples include polypropylene, polyester, polyvinyl fluoride, and polyvinyl chloride. Other examples include polyamide, polyimide, aramid, epoxy resin, inorganic vapor deposition film, and paper. If the manufacturing process of the display device DSP includes heat treatment, it is preferable to select a material with high heat resistance for the substrate BS.

[0140] In this embodiment, the substrate BS is described as a semiconductor substrate made of silicon, and therefore, the transistors included in the driver circuit region DRV can be transistors having silicon in their channel formation regions (hereinafter referred to as Si transistors).

[0141] The drive circuit region DRV is provided on the substrate BS.

[0142] The drive circuit region DRV has, as an example, a drive circuit for driving pixels included in a pixel layer PXAL, which will be described later. Note that a specific configuration example of the drive circuit region DRV will be described later.

[0143] The wiring layer LINL is provided on the circuit layer SICL.

[0144] The wiring layer LINL is provided with wiring, for example. The wiring included in the wiring layer LINL functions as wiring that electrically connects, for example, a drive circuit included in a drive circuit region DRV provided below and a circuit included in a pixel layer PXAL provided above.

[0145] The pixel layer PXAL has, as an example, a plurality of display pixels (for example, the circuit PX in FIG. 5A , the circuit PX_R, the circuit PX_G, or the circuit PX_B in FIG. 5C ) and a plurality of imaging pixels (for example, the circuit PV in FIG. 5A ). The plurality of display pixels and the plurality of imaging pixels may be arranged in a matrix in the pixel layer PXAL. In some cases, the pixel layer PXAL may include a plurality of circuits PX_L that function as an imaging light source, as shown in FIGS. 5B and 5D .

[0146] 7A is an example of a plan view of the display device DSP, showing only the display unit DIS. Note that the display unit DIS can be a plan view of the pixel layer PXAL.

[0147] 7A, the display unit DIS is divided into m rows and n columns (m is an integer greater than or equal to 1, and n is an integer greater than or equal to 1) of regions, for example. Therefore, the display unit DIS has a configuration including regions ARA[1,1] to ARA[m,n]. In addition, in Figure 7A, as an example, area ARA[1,1], area ARA[2,1], area ARA[m-1,1], area ARA[m,1], area ARA[1,2], area ARA[2,2], area ARA[m-1,2], area ARA[m,2], area ARA[1,n-1], area ARA[2,n-1], area ARA[m-1,n-1], area ARA[m,n-1], area ARA[1,n], area ARA[2,n], area ARA[m-1,n], and area ARA[m,n] are each shown in excerpt form.

[0148] For example, if it is desired to divide the display unit DIS into 32 regions, m = 4 and n = 8, and the configuration shown in Figure 7A can be applied. If the resolution of the display device DSP is 8K4K, the number of display pixels is 7680 x 4320 pixels. If the sub-display pixels of the display unit DIS are three colors, red (R), green (G), and blue (B), the total number of sub-display pixels is 7680 x 4320 x 3. Here, if the pixel array of the display unit DIS with an 8K4K resolution is divided into 32 regions, the number of display pixels per region is 960 x 1080 pixels. If the sub-display pixels of the display device DSP are three colors, red (R), green (G), and blue (B), the number of sub-display pixels per region is 960 x 1080 x 3.

[0149] Here, in the display device DSP of FIG. 7A, a drive circuit region DRV included in the circuit layer SICL will be considered in the case where the display unit DIS is divided into regions of m rows and n columns.

[0150] FIG. 7B is an example of a plan view of the display device DSP, showing only the drive circuit region DRV included in the circuit layer SICL.

[0151] 7A, the display unit DIS is divided into m rows and n columns, and therefore, each of the divided areas ARA[1,1] to ARA[m,n] requires a corresponding driving circuit. Specifically, the driving circuit area DRV may also be divided into m rows and n columns, and a driving circuit may be provided in each divided area.

[0152] 7B shows a configuration in which the driver circuit region DRV is divided into regions of m rows and n columns, and therefore the driver circuit region DRV has circuit regions ARD[1,1] to ARD[m,n]. In addition, in Figure 7B, as an example, circuit area ARD[1,1], circuit area ARD[2,1], circuit area ARD[m-1,1], circuit area ARD[m,1], circuit area ARD[1,2], circuit area ARD[2,2], circuit area ARD[m-1,2], circuit area ARD[m,2], circuit area ARD[1,n-1], circuit area ARD[2,n-1], circuit area ARD[m-1,n-1], circuit area ARD[m,n-1], circuit area ARD[1,n], circuit area ARD[2,n], circuit area ARD[m-1,n], and circuit area ARD[m,n] are each shown in excerpt form.

[0153] Each of the circuit regions ARD[1,1] to ARD[m,n] includes a drive circuit SD, a drive circuit GD, a drive circuit TD, and a drive circuit RD. For example, the drive circuit SD and the drive circuit GD included in the circuit region ARD[i,j] (not shown in FIG. 7B ) located in the i-th row and j-th column (i is an integer between 1 and m, and j is an integer between 1 and n) can drive a plurality of display pixels included in the region ARA[i,j] located in the i-th row and j-th column of the display unit DIS. Furthermore, for example, the drive circuit TD and the drive circuit RD included in the circuit region ARD located in the i-th row and j-th column can drive the imaging pixels and the imaging light source included in the region ARA[i,j] located in the i-th row and j-th column of the display unit DIS.

[0154] The driver circuit SD functions as, for example, a source driver circuit that transmits image signals to a plurality of display pixels included in the corresponding area ARA. Note that the driver circuit SD may also include a digital-to-analog conversion circuit that converts digital image signals into analog data. For this reason, the driver circuit SD is preferably electrically connected to the wirings SL (wirings SL_R, SL_G, and SL_B) in each of Figures 5A to 5D.

[0155] The driving circuit GD functions as a gate driver circuit for selecting a plurality of display pixels to which an image signal is to be sent in the corresponding area ARA, for example, and is therefore preferably electrically connected to the wiring GL in each of Figures 5A to 5D.

[0156] The driver circuit TD has, for example, a function of transmitting a trigger signal for imaging in the circuit PV, a function of selecting the circuit PV for each row in order to read imaging data from the circuit PV, and a function of transmitting a trigger signal for resetting the imaging data held in the circuit PV. For this reason, the driver circuit TD is preferably electrically connected to the wirings SE, RS, and TX in each of FIGS.

[0157] The drive circuit RD has a function of, for example, holding the imaging data supplied from the circuit PV for each column and performing noise reduction processing. For example, the noise reduction processing may include CDS (Correlated Double Sampling) processing. The drive circuit RD may also have a function of amplifying the imaging data and a function of AD conversion of the imaging data. For this reason, the drive circuit RD is preferably electrically connected to the wiring OL in each of FIGS. 5A to 5D .

[0158] 6A , 7A , and 7B , the region ARA[i,j] and the circuit region ARD[i,j] of the display unit DIS overlap each other, but the display device of one embodiment of the present invention is not limited to this. In the display device of one embodiment of the present invention, the region ARA[i,j] and the circuit region ARD[i,j] do not necessarily overlap each other.

[0159] For example, as shown in FIG. 6B, the display device DSP may have a configuration in which not only the drive circuit region DRV but also the region LIA is provided on the substrate BS.

[0160] As an example, wiring is provided in the region LIA. The wiring included in the region LIA may be electrically connected to wiring included in the wiring layer LINL. In this case, the display device DSP may be configured so that the circuit included in the drive circuit region DRV and the circuit included in the pixel layer PXAL are electrically connected by the wiring included in the region LIA and the wiring included in the wiring layer LINL. The display device DSP may be configured so that the circuit included in the drive circuit region DRV and the wiring included in the region LIA or the circuit are electrically connected via the wiring included in the wiring layer LINL.

[0161] Furthermore, the region LIA may include, for example, a GPU (Graphics Processing Unit). Furthermore, if the display device DSP includes a touch panel, the region LIA may include a sensor controller that controls a touch sensor included in the touch panel. Furthermore, if a liquid crystal element is used as the display element of the display device DSP, the region LIA may include a gamma correction circuit. Furthermore, the region LIA may include a controller having the function of processing an input signal from outside the display device DSP. Furthermore, the region LIA may include the above-mentioned circuits and a voltage generation circuit for generating a voltage to be supplied to a drive circuit included in the circuit region ARD.

[0162] Furthermore, when a light-emitting device using an organic EL material is used as a display element of the display device DSP, the region LIA may include an EL correction circuit. The EL correction circuit, for example, has the function of appropriately adjusting the amount of current input to the light-emitting device containing the organic EL material. Because the luminance of a light-emitting device containing an organic EL material during light emission is proportional to the current, if the characteristics of the drive transistor electrically connected to the light-emitting device are poor, the luminance of the light emitted by the light-emitting device may be lower than the desired luminance. The EL correction circuit, for example, monitors the amount of current flowing through the light-emitting device, and when the amount of current is smaller than the desired amount, increases the amount of current flowing through the light-emitting device to increase the luminance of the light emitted by the light-emitting device. Conversely, when the amount of current is larger than the desired amount, the EL correction circuit may decrease the amount of current flowing through the light-emitting device.

[0163] Fig. 8 is an example of a plan view of the display device DSP shown in Fig. 6B, showing only the circuit layer SICL. The display device DSP in Fig. 8 also shows, as an example, a configuration in which the drive circuit region DRV is surrounded by the region LIA. Therefore, as shown in Fig. 8, the drive circuit region DRV is arranged so as to overlap the inside of the display unit DIS in a plan view.

[0164] In addition, the display device DSP shown in Figure 8 is assumed to have a display unit DIS divided into areas ARA[1,1] to ARA[m,n], as in Figure 7A, and a drive circuit area DRV divided into circuit areas ARD[1,1] to ARD[m,n].

[0165] 8, as an example, the correspondence between the area ARA and the circuit area ARD including the driving circuits that drive the pixels included in the area ARA is illustrated by thick arrows. Specifically, the driving circuits included in the circuit area ARD[1,1] drive the pixels included in the area ARA[1,1], and the driving circuits included in the circuit area ARD[2,1] drive the pixels included in the area ARA[2,1]. Furthermore, the driving circuits included in the circuit area ARD[m-1,1] drive the pixels included in the area ARA[m-1,1], and the driving circuits included in the circuit area ARD[m,1] drive the pixels included in the area ARA[m,1]. Furthermore, the driving circuits included in the circuit area ARD[1,n] drive the pixels included in the area ARA[1,n], and the driving circuits included in the circuit area ARD[2,n] drive the pixels included in the area ARA[2,n]. Furthermore, the drive circuit included in the circuit area ARD[m-1,n] drives the pixels included in the area ARA[m-1,n], and the drive circuit included in the circuit area ARD[m,n] drives the pixels included in the area ARA[m,n]. In other words, although not shown in Figure 8, the drive circuit included in the circuit area ARD[i,j] located in the i-th row and j-th column drives the pixels included in the area ARA[i,j].

[0166] 6B, the drive circuit included in the circuit region ARD in the circuit layer SICL and the pixels included in the region ARA in the pixel layer PXAL are electrically connected by wiring included in the wiring layer LINL, so that the display device DSP can be configured so that the region ARA[i,j] and the circuit region ARD[i,j] do not necessarily overlap each other. Therefore, the positional relationship between the drive circuit region DRV and the display unit DIS is not limited to the plan view of the display device DSP shown in FIG. 8, and the arrangement of the drive circuit region DRV can be freely determined.

[0167] In the display device of one embodiment of the present invention, the arrangement of the driver circuit SD, the driver circuit GD, the driver circuit TD, and the driver circuit RD in each of the circuit regions ARD[1,1] to ARD[m,n] is not limited to the configurations shown in Figures 7B and 8. The driver circuit SD, the driver circuit GD, the driver circuit TD, and the driver circuit RD are not limited to the shapes shown in Figures 7B and 8 and may be arranged in various shapes within one circuit region ARD. For example, in a plan view of the circuit region ARD, the driver circuit SD, the driver circuit GD, the driver circuit RD, and the driver circuit TD may not overlap with each other, and the driver circuit SD may be arranged in the upper left, the driver circuit RD may be arranged in the lower left, the driver circuit GD may be arranged in the upper right, and the driver circuit TD may be arranged in the lower right.

[0168] As shown in Figures 7A to 8, by dividing the display unit DIS into multiple areas ARA and providing a drive circuit corresponding to each area ARA, the circuits included in the multiple areas ARA can be driven independently.

[0169] Next, an example of the configuration of the area ARA will be described. Fig. 9 is a block diagram showing an example of the area ARA. In Fig. 9, the area ARA can be configured to have a plurality of circuits AP shown in Fig. 5A, as an example. Note that the circuit AP included in the area ARA may be any one of the circuits AP shown in Figs. 5B to 5D, rather than the circuit AP shown in Fig. 5A.

[0170] 9 also illustrates the driver circuits SD, GD, TD, and RD in order to show their electrical connection with the circuit AP included in the region ARA. Note that, as shown in FIGS. 6A to 8, the driver circuits SD, GD, TD, and RD are superimposed on the pixel layer PXAL including the region ARA, but for convenience, the driver circuits SD, GD, TD, and RD are illustrated as being located outside the region ARA in FIG.

[0171] 9, multiple circuits AP are arranged in a matrix within an area ARA. Therefore, multiple wirings GL, SE, RS, and TX extend in the row direction within the area ARA. Similarly, multiple wirings SL and OL extend in the column direction within the area ARA.

[0172] For example, the wirings GL are electrically connected to a driver circuit GD. For example, the wirings SL are electrically connected to a driver circuit SD. For example, the wirings SE, the wirings RS, and the wirings TX are electrically connected to a driver circuit TD. For example, the wirings OL are electrically connected to a driver circuit RD.

[0173] The number of circuits AP included in one area ARA is determined by, for example, the resolution of the display unit DIS of the display device DSP and the values ​​of m and n shown in FIG. 7A.

[0174] Next, an example of each component included in the display device DSP will be described. Fig. 10 is a block diagram showing an example of the display device DSP. The display device DSP shown in Fig. 10 has a display unit DIS and a peripheral circuit PRPH.

[0175] The peripheral circuit PRPH includes a circuit GDS including a plurality of drive circuits GD, a circuit SDS including a plurality of drive circuits SD, a circuit RDS including a plurality of drive circuits RD, a circuit TDS including a plurality of drive circuits TD, a distribution circuit DMG, a distribution circuit DMS, a distribution circuit TMG, a distribution circuit RMG, a control unit CTR, a memory device MD, a voltage generation circuit PG, a timing controller TMC, a clock signal generation circuit CKS, an image processing unit GPS, and an interface INT.

[0176] 6A to 8, in the display device DSP, the drive circuit region DRV including each of the multiple drive circuits GD overlaps with the pixel layer PXAL including multiple regions ARA, but in Fig. 10, for convenience, the multiple drive circuits GD are illustrated as being lined up in a row outside the display unit DIS. Similarly, the drive circuit region DRV including each of the multiple drive circuits SD overlaps with the pixel layer PXAL including multiple regions ARA, but in Fig. 10, for convenience, the multiple drive circuits SD are illustrated as being lined up in a row outside the display unit DIS. Similarly, the drive circuit region DRV including each of the multiple drive circuits TD overlaps with the pixel layer PXAL including multiple regions ARA, but in Fig. 10, for convenience, the multiple drive circuits TD are illustrated as being lined up in a row outside the display unit DIS. Similarly, the drive circuit region DRV, which includes each of the multiple drive circuits RD, overlaps with the pixel layer PXAL, which includes multiple regions ARA. However, in Figure 10, for convenience, the multiple drive circuits RD are shown lined up in a row outside the display section DIS.

[0177] The peripheral circuit PRPH is included in, for example, the circuit layer SICL shown in Figures 6A and 6B. The circuit GDS and the circuit SDS included in the peripheral circuit PRPH are included in, for example, the drive circuit region DRV shown in Figures 6A and 6B.

[0178] Also, in the case of the display device DSP of Figure 6A, each of the distribution circuit DMG, distribution circuit DMS, distribution circuit TMG, distribution circuit RMG, control unit CTR, memory device MD, voltage generation circuit PG, timing controller TMC, clock signal generation circuit CKS, image processing unit GPS, and interface INT may be electrically connected to a circuit included in the drive circuit region DRV as an external circuit, for example.

[0179] 6B , one or more selected from the distribution circuit DMG, distribution circuit DMS, distribution circuit TMG, distribution circuit RMG, control unit CTR, memory device MD, voltage generation circuit PG, timing controller TMC, clock signal generation circuit CKS, image processing unit GPS, and interface INT may be included in the area LIA. Furthermore, among the above-mentioned circuits, circuits not included in the area LIA may be electrically connected as external circuits to one or more selected from the circuits included in the area LIA and the circuits included in the drive circuit area DRV.

[0180] The distribution circuit DMG, distribution circuit DMS, distribution circuit TMG, distribution circuit RMG, control unit CTR, memory device MD, voltage generation circuit PG, timing controller TMC, clock signal generation circuit CKS, image processing unit GPS, and interface INT each transmit and receive various signals to and from each other via bus wiring BW.

[0181] The interface INT functions as a circuit for inputting image information for displaying an image on the display device DSP, which is output from an external device, into the circuitry within the peripheral circuit PRPH. Examples of the external device include a recording media player, a hard disk drive (HDD), and a non-volatile storage device such as a solid state drive (SSD). The interface INT may also function as a circuit for outputting a signal from the circuitry within the peripheral circuit PRPH to a device outside the display device DSP.

[0182] Furthermore, when image information is input to the interface INT from an external device via wireless communication, the interface INT may be configured to include, for example, an antenna for receiving the image information, a mixer, an amplifier circuit, and an analog-to-digital conversion circuit.

[0183] The control unit CTR has the function of processing various control signals sent from an external device via the interface INT and controlling various circuits included in the peripheral circuit PRPH.

[0184] The memory device MD has the function of temporarily storing information and image signals. In this case, the memory device MD functions, for example, as a frame memory (sometimes called a frame buffer). The memory device MD may also have the function of temporarily storing at least one of information sent from an external device via the interface INT and information processed by the control unit CTR. Note that, for example, at least one of SRAM (Static Random Access Memory) and DRAM (Dynamic Random Access Memory) can be used as the memory device MD.

[0185] The voltage generation circuit PG has a function of generating power supply voltages to be supplied to the pixel circuits included in the display unit DIS and the circuits included in the peripheral circuit PRPH. Note that the voltage generation circuit PG may also have a function of selecting the circuit to which the voltage is supplied. For example, during a period in which a still image is displayed on the display unit DIS, the voltage generation circuit PG can reduce the power consumption of the entire display device DSP by stopping the voltage supply to the circuit GDS, the circuit SDS, the image processing unit GPS, the timing controller TMC, and the clock signal generation circuit CKS.

[0186] The timing controller TMC has a function of generating timing signals used by the multiple driver circuits GD included in the circuit GDS and the multiple driver circuits SD included in the circuit SDS. The timing signals can be generated using clock signals generated by the clock signal generation circuit CKS.

[0187] The image processing unit GPS has a function of performing processing to draw an image on the display unit DIS. For example, the image processing unit GPS may have a GPU (Graphics Processing Unit). In particular, the image processing unit GPS is configured to perform parallel pipeline processing, thereby enabling high-speed processing of image data to be displayed on the display unit DIS. The image processing unit GPS can also function as a decoder to restore encoded images.

[0188] The image processing unit GPS may also have a function of correcting the color tone of the image displayed on the display unit DIS. In this case, it is preferable that the image processing unit GPS is provided with one or both of a light adjustment circuit and a color adjustment circuit. Furthermore, if the display pixels included in the display unit DIS include organic EL elements, the image processing unit GPS may also be provided with an EL correction circuit.

[0189] Furthermore, artificial intelligence may be used for the image correction described above. For example, the current flowing through a display device (or the voltage applied to the display device) provided in the pixel may be monitored and acquired, and the image displayed on the display unit DIS may be acquired by an image sensor or the like, and the current (or voltage) and the image may be treated as input data for an artificial intelligence calculation (for example, an artificial neural network, etc.), and the output result may be used to determine whether or not the image should be corrected.

[0190] Furthermore, the calculations of the artificial intelligence can be applied not only to image correction but also to image data upconversion processing, which allows low-resolution image data to be upconverted to match the resolution of the display unit DIS, thereby enabling high-quality images to be displayed on the display unit DIS.

[0191] The above-mentioned AI calculations can be performed using, for example, a GPU included in the image processing unit GPS. That is, various correction calculations (for example, color unevenness correction or up-conversion) can be performed using the GPU.

[0192] In this specification, a GPU that performs computations for artificial intelligence is referred to as an AI accelerator. That is, in this specification, a GPU may be substituted for an AI accelerator in the following description.

[0193] The clock signal generating circuit CKS has a function of generating a clock signal. Furthermore, for example, the clock signal generating circuit CKS may be configured to be able to change the frame frequency of the clock signal in accordance with the image to be displayed on the display unit DIS.

[0194] The distribution circuit DMG has a function of transmitting a signal received from the bus line BW to a drive circuit GD that drives a display pixel included in one of the plurality of areas ARA according to the content of the signal.

[0195] The distribution circuit DMS has a function of transmitting a signal received from the bus line BW to a drive circuit SD that drives a display pixel included in one of the areas ARA according to the content of the signal.

[0196] The distribution circuit TMG has a function of transmitting a signal received from the bus line BW to a drive circuit TD that drives an imaging pixel included in one of the multiple areas ARA, depending on the content of the signal.

[0197] The distribution circuit RMG has a function of transmitting a signal received from the bus line BW to a drive circuit RD that drives an imaging pixel included in one of the multiple areas ARA, depending on the content of the signal.

[0198] 10, the peripheral circuit PRPH may include a level shifter. As an example, the level shifter has a function of converting signals input to each circuit to an appropriate level.

[0199] 10 is an example, and the circuit configuration included in the peripheral circuit PRPH may be changed depending on the situation. For example, if the display device DSP is configured to receive drive voltages for each circuit from an external source, there is no need to generate the drive voltages within the display device DSP, and in this case, the display device DSP may be configured not to include a voltage generation circuit PG.

[0200] Note that this embodiment mode can be appropriately combined with other embodiment modes described in this specification.

[0201] Embodiment Mode 2 In this embodiment mode, electronic devices using the display device described in Embodiment Mode 1 will be described.

[0202] [Microscope] Fig. 11A shows an example of the configuration of a microscope, which is an example of an electronic device. Note that since a microscope is a type of optical device, it may be referred to as an optical device in this specification. The microscope MCS has a housing KYI, a lens RNS, and a light-emitting device ISP. Fig. 11B is a schematic cross-sectional view of the microscope MCS in Fig. 11A.

[0203] In the microscope MCS shown in Fig. 11A, the housing KYI has, as an example, a shape that combines a cylindrical shape CYL with a conical shape CNE that is open at its tip. In Fig. 11A and Fig. 11B, the open area at the tip of the conical shape CNE is illustrated as an opening KKB.

[0204] In addition, in FIG. 11A, a partial area of ​​the cylindrical shape CYL of the casing KYI is indicated by a broken line so that the arrangement of the lens RNS and the light emitting device ISP can be seen.

[0205] The light emitting device ISP and the lens RNS are provided in a region where they overlap each other and also overlap the opening KKB.

[0206] The light-emitting device ISP can be, for example, the display device DSP described in embodiment 1. The light-emitting device ISP can be a display device DSP that does not have display pixels. In this configuration example, the light-emitting device ISP has an imaging light source and imaging pixels in the display device DSP.

[0207] Light LGT1 from a light-emitting pixel that functions as an imaging light source and is provided in the light-emitting device ISP is emitted from an opening KKB via a lens RNS. Furthermore, when the light LGT1 is irradiated onto an object, light LGT2 that is reflected from the object is incident on an imaging pixel provided in the light-emitting device ISP via the opening KKB and the lens RNS.

[0208] In the light-emitting device ISP, the imaging light source and imaging pixels can be formed on the same substrate, as in the display device DSP described in embodiment 1. In other words, since the imaging light source and imaging pixels can be integrated into the light-emitting device ISP, by applying the light-emitting device ISP to the microscope MCS shown in Figures 11A and 11B, the number of components in the microscope MCS can be reduced. This also allows the microscope MCS to be made smaller.

[0209] A specific example of the use of the microscope MCS is skin surface analysis. For example, as shown in Fig. 11C, a user USR can diagnose the condition of their own skin by placing the opening KKB located at the tip of the microscope MCS against their own skin.

[0210] At this time, the light emitting device ISP can capture images by dividing the light emitting device ISP into an image capturing light source area LEA and an image capturing area MA as shown in any one of Fig. 1B, Fig. 3B, and Fig. 4A to Fig. 4E. Specifically, light LGT1 is emitted by light emitting pixels included in the image capturing light source area LEA, and light LGT2 is acquired by image capturing pixels included in the image capturing area MA.

[0211] Furthermore, by making the imaging light source included in the imaging light source area LEA an emitting pixel that emits visible light, and by making the imaging element included in the imaging pixel of the imaging area MA an imaging element that acquires the visible light, the surface of the user USR's skin can be acquired as an image.

[0212] Furthermore, by making the imaging light source included in the imaging light source area LEA an emitting pixel that emits infrared light, and by making the imaging element included in the imaging pixel of the imaging area MA an imaging element that acquires the infrared light, it is possible to acquire an image of the inside of the user USR's skin.

[0213] Furthermore, by performing image analysis using captured images of the surface of the skin and captured images of the inside of the skin, it is possible to measure the degree of skin health. Examples of the degree of skin health include skin texture, blemishes (melanin amount), sagging, and the degree of pore opening. By performing image analysis, it is possible to quantify each of the skin texture, blemishes (melanin amount), and the degree of pore opening, and obtain the respective numerical values.

[0214] In addition, in the image analysis, as an example, an artificial intelligence calculation (calculation using an artificial neural network model) may be performed. As an artificial neural network model that can be used for image analysis, for example, deep learning is preferably used. Examples of deep learning include convolutional neural networks (CNN), recurrent neural networks (RNN), autoencoders (AE), variational autoencoders (VAE), and generative adversarial networks (GAN). Furthermore, examples of computational models other than artificial neural networks that can be used for image analysis include random forests, support vector machines, and gradient boosting.

[0215] Furthermore, as described above, the microscope MCS may be used not only to measure the degree of skin health, but also to observe pimples and other blemishes on the skin, as well as wounds. Another use of the microscope MCS may be, for example, to observe the scalp. Similarly to the image analysis of the captured image of the skin described above, a captured image of the scalp may be acquired and image analysis of the scalp may be performed to diagnose the health condition of the scalp.

[0216] [Portable Information Terminal] Fig. 11D shows a configuration example of a smartphone, which is an example of an electronic device. Note that, since a smartphone is an example of a portable information terminal, it may be referred to as a portable information terminal in this specification. The smartphone SMP has a light-emitting device ISP.

[0217] Note that the smartphone SMP shown in FIG. 11D includes the display device DSP described in the first embodiment, and therefore the smartphone SMP may be referred to as an optical device.

[0218] In this configuration example, the light-emitting device ISP of the smartphone SMP can be provided with the display device DSP described in embodiment 1. By providing the light-emitting device ISP with the display device DSP described in embodiment 1, the light-emitting device ISP can capture an image of light incident on the light-emitting device ISP using the imaging pixels included in the light-emitting device ISP. Note that in this configuration example, the light-emitting device ISP may be provided with display pixels, unlike the light-emitting device ISP of FIGS. 11A to 11C .

[0219] Furthermore, similarly to the microscope MCS, the smartphone SMP may be used to diagnose the skin condition. For example, as shown in Fig. 11E, the user USR can diagnose the skin condition by applying the light-emitting device ISP of the smartphone SMP to the user USR's own skin.

[0220] At this time, it is preferable that the light emitting device ISP be divided into an imaging light source area LEA and an imaging area MA as shown in any one of FIG. 1B, FIG. 3B, and FIG. 4A to FIG. 4E, and then perform imaging.

[0221] [Image Capture Method] In the light emitting device ISP described in the present embodiment, when a method is applied in which, instead of a method in which all of the imaging pixels in the multiple areas ARA included in the imaging area MA capture images simultaneously, multiple areas ARA included in the imaging area MA are sequentially selected to capture images (hereinafter referred to as a first method), the arrangement of the imaging light source area LEA of the light emitting device ISP and the imaging area MA is not limited to that shown in Figures 1B, 3B, and 4A to 4E. In addition, when the first method is applied, the arrangement of the imaging light source area LEA and the imaging area MA may be sequentially switched during imaging.

[0222] 12A to 12D show an example of an imaging method for a light-emitting device ISP to which the first method is applied. Note that the light-emitting device ISP shown in Fig. 12A to 12D has an imaging unit IMC, which is a device divided into m rows and n columns (m is an integer of 1 or more, and n is an integer of 1 or more) of areas ARA, similar to the display unit DIS of Fig. 1A described in embodiment 1.

[0223] 12A shows the arrangement of the light source area LEA for imaging and the standby area STA in the imaging unit IMC immediately after the start of imaging operation. The standby area STA is an area where neither the imaging pixels nor the display pixels included in the area ARA are driven.

[0224] 12A, the image capturing light source area LEA includes all areas ARA located in the first row. The standby area STA also includes areas ARA other than the image capturing light source area LEA of the image capturing unit IMC.

[0225] FIG. 12B shows the arrangement of the imaging area MA, imaging light source area LEA, and standby area STA in the imaging unit IMC after the imaging operation of FIG. 12A.

[0226] In the imaging unit IMC of FIG. 12B , the imaging area MA includes all areas ARA located in the first column. In this embodiment, the imaging area MA is an area in which imaging pixels can be driven. Being able to drive imaging pixels means that an imaging image can be written to the imaging pixels, or that the imaging pixels can be read out. In this embodiment, the display pixels included in the area ARA of the imaging area MA do not need to be driven. The imaging light source area LEA includes all areas ARA located in the second column. The standby area STA includes the imaging area MA of the imaging unit IMC and areas ARA other than the imaging light source area LEA.

[0227] FIG. 12C shows the arrangement of the imaging area MA, imaging light source area LEA, and standby area STA in the imaging unit IMC after the imaging operation of FIG. 12B.

[0228] 12C, the imaging area MA includes all areas ARA located in the second row, the imaging light source area LEA includes all areas ARA located in the third row, and the standby area STA includes the imaging area MA of the imaging unit IMC and areas ARA other than the imaging light source area LEA.

[0229] 12A to 12C, the image capturing light source area LEA is selected row by row starting from the area ARA in the first row of the image capturing unit IMC. When the area ARA in the next row is selected as the image capturing light source area LEA, the image capturing light source area LEA selected at the previous timing is switched to the image capturing area MA.

[0230] 12A to 12C, the selection of the image capturing light source areas LEA continues from the fourth column onwards of the image capturing unit IMC. Fig. 12D shows the arrangement of the image capturing areas MA, image capturing light source areas LEA, and standby areas STA when the selection of the image capturing light source areas LEA has been carried out up to the nth column of the image capturing unit IMC.

[0231] As shown in Figures 12A to 12D, the imaging area MA and the imaging light source area LEA are sequentially selected one column at a time in the imaging unit IMC, and each time they are sequentially selected, the imaging pixels of the area ARA included in the imaging area MA are driven, thereby allowing the light emitting device ISP to perform imaging.

[0232] 12A to 12D , for example, the imaging light source area LEA is the area ARA in the jth column (where j is an integer between 2 and n) of the imaging unit IMC, and the imaging area MA is the area ARA in the j-1th column of the imaging unit IMC, but in an imaging method for a light emitting device ISP according to one aspect of the present invention, the imaging light source area LEA may be the area ARA in the j-1th column of the imaging unit IMC, and the imaging area MA may be the area ARA in the jth column of the imaging unit IMC (not shown). Note that in FIG. 12A , when the imaging light source LEA is in the first column, the imaging area MA is not set.

[0233] 12E , the imaging area MA may be the area ARA of the kth column (where k is an integer between 2 and n−1) of the imaging unit IMC, and the imaging light source area LEA may be the area ARA of the k−1th and k+1th columns of the imaging unit IMC. The light emitting device ISP can also capture an image by changing the value of k from 2 to n−1, sequentially selecting the imaging areas MA one column at a time in the imaging unit IMC, and driving the imaging pixels included in the imaging area MA each time a pixel is selected.

[0234] An example of the operation of the light emitting device ISP described above can be expressed as an example of the operation of the flowchart shown in Fig. 13. The operating method of the light emitting device ISP, which is an example of the operation of the flowchart in Fig. 13, has steps ST1 to ST3. Note that in the flowchart in Fig. 13, the start of the operation is described as "START" and the end of the operation is described as "END."

[0235] Step ST1 includes a step in which the light emitting device ISP sets an imaging area MA, an imaging light source area LEA, and a standby area STA in the imaging unit IMC.

[0236] Step ST1 also includes a step of performing imaging after the imaging area MA, the imaging light source area LEA, and the standby area STA are set in the imaging unit IMC.

[0237] Furthermore, step ST2 includes a step in which the light-emitting device ISP resets the imaging area MA set at the previous timing to the imaging light source area LEA or the waiting area STA, resets the imaging light source area LEA set at the previous timing to the imaging area MA or the waiting area STA, and resets a portion of the waiting area STA set at the previous timing to the imaging light source area LEA. Although not shown in Figures 12A to 12D, a portion of the waiting area STA set at the previous timing may be reset to the imaging area MA instead of the imaging light source area LEA. The previous timing may be, for example, step ST1 or step ST2.

[0238] In other words, step ST2 includes a step of resetting the imaging area MA set in the imaging unit IMC to the imaging light source area LEA or the waiting area STA, resetting the imaging light source area LEA set in the imaging unit IMC to the imaging area MA or the waiting area STA, and resetting a part of the waiting area STA set in the imaging unit IMC to the imaging light source area LEA.

[0239] Step ST2 also includes a step of performing imaging after the imaging area MA, the imaging light source area LEA, and the standby area STA for the imaging unit IMC have been reset.

[0240] Step ST3 includes a step of determining whether imaging has been completed in all desired areas of the imaging unit IMC of the light-emitting device ISP. If imaging has been completed in all desired areas of the imaging unit IMC (denoted as "YES" in FIG. 13), the operation of the flowchart in FIG. 13 ends. If imaging has not been completed in all desired areas of the imaging unit IMC (denoted as "NO" in FIG. 13), the process proceeds to step ST2. Note that the desired area may be the entire area ARA in the imaging unit IMC, or may be a portion of the area ARA in the imaging unit IMC.

[0241] The light emitting device ISP can perform imaging by repeatedly setting the imaging area MA, the imaging light source area LEA, and the waiting area STA through the above-mentioned operations, and driving the imaging pixels included in the imaging unit IMC each time they are set.

[0242] An example of an imaging method for the light emitting device ISP that is different from the above is shown in FIGS. 14A and 14B.

[0243] FIG. 14A shows, as an example, the arrangement of the imaging light source area LEA and the imaging area MA in the imaging unit IMC immediately after starting the imaging operation.

[0244] 14A, the imaging light source area LEA includes all areas ARA located in odd-numbered columns, and the imaging area MA includes all areas ARA located in even-numbered columns.

[0245] FIG. 14B shows the arrangement of the imaging area MA and the imaging light source area LEA in the imaging unit IMC after the imaging operation of FIG. 14A.

[0246] 14B, the imaging light source area LEA includes all areas ARA located in the even-numbered columns, and the imaging area MA includes all areas ARA located in the odd-numbered columns.

[0247] Note that although the imaging unit IMC in Figures 14A and 14B is illustrated so that the nth column is an even-numbered column, the nth column of the imaging unit IMC of the light-emitting device ISP in which this operation example is performed may also be an odd-numbered column.

[0248] As shown in Figure 14A, the area ARA located on the even-numbered columns of the imaging unit IMC is set as the imaging area MA, and the imaging pixels included in the area ARA located on the even-numbered columns are driven, and then, as shown in Figure 14B, the area ARA located on the odd-numbered columns of the imaging unit IMC is set as the imaging area MA, and the imaging pixels included in the area ARA located on the odd-numbered columns are driven, thereby allowing the light-emitting device ISP to perform imaging.

[0249] The order of the imaging operations of the light-emitting device ISP is not limited to the above. As an imaging operation order different from the above, as shown in Fig. 14B, the imaging pixels in the area ARA located in the odd-numbered columns of the imaging unit IMC may be driven first, and then the imaging pixels in the area ARA located in the even-numbered columns of the imaging unit IMC may be driven as shown in Fig. 14A.

[0250] An example of an imaging method of the light emitting device ISP that is different from the above is shown in FIGS. 14C and 14D.

[0251] FIG. 14C shows, as an example, the arrangement of the imaging light source area LEA and the imaging area MA in the imaging unit IMC immediately after starting the imaging operation.

[0252] 14C , when i+j (where i is an integer between 1 and m, and j is an integer between 1 and n) is an odd number, the area ARA located at row i and column j is included in the imaging light source area LEA. When i+j is an even number, the area ARA located at row i and column j is included in the imaging area MA.

[0253] FIG. 14D shows the arrangement of the imaging region MA and the imaging light source region LEA in the imaging unit IMC after the imaging operation of FIG. 14C.

[0254] 14D, when i+j is an odd number, the area ARA located at row i and column j is included in the imaging area MA, and when i+j is an even number, the area ARA located at row i and column j is included in the imaging light source area LEA.

[0255] Note that although the imaging units IMC in Figures 14C and 14D are illustrated so that the nth column is an even-numbered column, the nth column of the imaging unit IMC of the light-emitting device ISP in which this operation example is performed may also be an odd-numbered column.

[0256] The light emitting device ISP can capture an image by driving the imaging pixels included in the imaging area MA shown in Figure 14C and then driving the imaging pixels included in the imaging area MA shown in Figure 14D.

[0257] The order of the imaging operations of the light-emitting device ISP is not limited to the above. As an alternative to the above order of imaging operations, the imaging pixels included in the imaging area MA shown in Fig. 14D may be driven first, and then the imaging pixels included in the imaging area MA shown in Fig. 14C may be driven.

[0258] An example of the operation of the light emitting device ISP described above can be expressed as an example of the operation of the flowchart shown in Fig. 15. The operating method of the light emitting device ISP, which is an example of the operation of the flowchart in Fig. 15, has steps SP1 to SP3. Note that in the flowchart in Fig. 15, the start of the operation is described as "START" and the end of the operation is described as "END."

[0259] Step SP1 includes a step of setting an imaging area MA and an imaging light source area LEA in the imaging unit IMC.

[0260] Step SP1 also includes a step of performing imaging after the imaging area MA and the imaging light source area LEA are set in the imaging unit IMC.

[0261] Step SP2 has a function of resetting the imaging area MA set at a previous timing to the imaging light source area LEA, and resetting the imaging light source area LEA set at a previous timing to the imaging area MA. The previous timing can be, for example, step SP1 or step SP2.

[0262] In other words, step SP2 includes a step of resetting the imaging area MA set in the imaging unit IMC to the imaging light source area LEA, and resetting the imaging light source area LEA set in the imaging unit IMC to the imaging area MA.

[0263] Step SP2 also includes a step of performing imaging after the imaging area MA of the imaging unit IMC and the imaging light source area LEA have been reset.

[0264] Step SP3 includes a step of determining whether imaging has been completed in all desired areas of the imaging unit IMC of the light-emitting device ISP. If imaging has been completed in all desired areas of the imaging unit IMC (denoted as "YES" in FIG. 15), the operation of the flowchart in FIG. 15 ends. If imaging has not been completed in all desired areas of the imaging unit IMC (denoted as "NO" in FIG. 15), the process proceeds to step SP2. Note that the desired area may be all areas ARA in the imaging unit IMC, or may be a portion of areas ARA in the imaging unit IMC.

[0265] The light emitting device ISP can perform imaging by repeatedly setting the imaging area MA and the imaging light source area LEA through the above-described operations and driving the imaging pixels included in the imaging unit IMC each time the settings are made.

[0266] The light-emitting device ISP can also capture images by performing the operation method described above. In particular, when the light-emitting device ISP of the smartphone SMP is large, it is preferable to use the operation method described in this embodiment and shown in FIGS. 12A to 15 . For example, in the arrangement of the image-capturing light source area LEA and the image-capturing area MA of the display unit DIS shown in FIG. 1B , light from the light-emitting pixels included in the image-capturing light source area LEA may not reach the vicinity of the center of the display unit DIS. In other words, when the light-emitting device ISP is large, as shown in FIG. 11D , it is preferable to use a method in which the image-capturing light source area LEA is arranged near the center of the image-capturing unit IMC, and therefore it can be said that using the operation method shown in FIGS. 12A to 15 is appropriate.

[0267] Note that this embodiment mode can be appropriately combined with other embodiment modes described in this specification.

[0268] In this embodiment, a display device that can be included in an electronic device according to one embodiment of the present invention will be described. Note that the display device described in this embodiment can be applied to the display portion DIS described in the above embodiment.

[0269] <Structure Example of Display Device> Figure 16 is a cross-sectional view illustrating an example of a display device according to one embodiment of the present invention. As an example, a display device 1000 illustrated in Figure 16 has a structure in which a pixel circuit, a driver circuit, and the like are provided over a substrate 310. Note that the structure of the display device DSP and the like according to the above-described embodiments can be the structure of the display device 1000 illustrated in Figure 16. Note that the pixel circuit described in this embodiment can be the display pixel described in the above-described embodiment.

[0270] Specifically, for example, the circuit layer SICL, the wiring layer LINL, and the pixel layer PXAL shown in the display device DSP can be configured as in the display device 1000 of Figure 16. As an example, the circuit layer SICL has a substrate 310, and a transistor 300 is formed on the substrate 310. In addition, a wiring layer LINL is provided above the transistor 300, and wiring electrically connected to the transistor 300, a transistor 200 described later, a light-emitting device 150a described later, or a light-emitting device 150b is provided in the wiring layer LINL. In addition, a pixel layer PXAL is provided above the wiring layer LINL, and the pixel layer PXAL has, as an example, the transistor 200 and a light-emitting device 150 (the light-emitting device 150a and the light-emitting device 150b in Figure 16).

[0271] The substrate 310 can be, for example, a semiconductor substrate (e.g., a single-crystal substrate made of silicon or germanium). Other than a semiconductor substrate, the substrate 310 can also be, for example, an SOI substrate, a glass substrate, a quartz substrate, a plastic substrate, a sapphire glass substrate, a metal substrate, a stainless steel substrate, a substrate having stainless steel foil, a tungsten substrate, a substrate having tungsten foil, a flexible substrate, a laminated film, paper containing a fibrous material, or a base film. Examples of glass substrates include barium borosilicate glass, aluminoborosilicate glass, and soda-lime glass. Examples of flexible substrates, laminated films, and base films include plastics such as polyethylene terephthalate (PET), polyethylene naphthalate (PEN), polyethersulfone (PES), and polytetrafluoroethylene (PTFE). Another example is a synthetic resin such as an acrylic resin. Another example is polypropylene, polyester, polyvinyl fluoride, or polyvinyl chloride. Other examples include polyamide, polyimide, aramid, epoxy resin, inorganic vapor deposition film, and paper. Note that, if a heat treatment is included in the manufacturing process of the display device 1000, it is preferable to select a material with high heat resistance for the substrate 310.

[0272] In this embodiment, the substrate 310 is described as a semiconductor substrate made of silicon.

[0273] The transistor 300 is provided over a substrate 310 and includes an element isolation layer 312, a conductor 316, an insulator 315, an insulator 317, a semiconductor region 313 formed of part of the substrate 310, and low-resistance regions 314a and 314b functioning as source and drain regions. Therefore, the transistor 300 is a Si transistor. Note that although FIG. 16 illustrates a configuration in which one of the source and drain of the transistor 300 is electrically connected to the conductor 330, the conductor 356, and the conductor 366, which will be described later, via the conductor 328, the electrical connection configuration of the display device of one embodiment of the present invention is not limited thereto. For example, the display device of one embodiment of the present invention may have a configuration in which the gate of the transistor 300 is electrically connected to the conductor 330, the conductor 356, and the conductor 366 via the conductor 328.

[0274] The transistor 300 can be a Fin type by, for example, covering the top surface and the side surfaces in the channel width direction of the semiconductor region 313 with a conductor 316 via an insulator 315 that functions as a gate insulating film. By configuring the transistor 300 as a Fin type, the effective channel width can be increased, and the on-state characteristics of the transistor 300 can be improved. Furthermore, the contribution of the electric field of the gate electrode can be increased, and the off-state characteristics of the transistor 300 can be improved.

[0275] Note that the transistor 300 may be either a p-channel transistor or an n-channel transistor. Alternatively, a plurality of transistors 300 may be provided, and both p-channel and n-channel transistors may be used.

[0276] The low-resistance region 314a and the low-resistance region 314b, which form the channel region of the semiconductor region 313, the region nearby the channel region, the source region, or the drain region, preferably contain a silicon-based semiconductor, specifically, single-crystal silicon. Alternatively, they may be formed of a material containing germanium (Ge), silicon germanium (SiGe), gallium arsenide (GaAs), aluminum gallium arsenide (GaAlAs), or gallium nitride (GaN). Alternatively, they may be configured using silicon whose effective mass is controlled by applying stress to the crystal lattice and changing the lattice spacing. Alternatively, the transistor 300 may be a high electron mobility transistor (HEMT) using gallium arsenide and aluminum gallium arsenide.

[0277] The conductor 316 functioning as the gate electrode can be made of a semiconductor material such as silicon containing an element that imparts n-type conductivity, such as arsenic or phosphorus, or an element that imparts p-type conductivity, such as boron or aluminum, or a conductive material such as a metal material, an alloy material, or a metal oxide material.

[0278] Since the work function is determined by the material of the conductor, the threshold voltage of the transistor can be adjusted by selecting the material of the conductor. Specifically, it is preferable to use a material such as titanium nitride or tantalum nitride as the conductor. Furthermore, in order to achieve both conductivity and embeddability, it is preferable to use a metal material such as tungsten or aluminum as the conductor in a stacked structure, and tungsten is particularly preferable in terms of heat resistance.

[0279] The element isolation layer 312 is provided to isolate a plurality of transistors formed on the substrate 310. The element isolation layer can be formed using, for example, a local oxidation of silicon (LOCOS) method, a shallow trench isolation (STI) method, a mesa isolation method, or the like.

[0280] 16 is just an example, and the structure of the transistor 300 is not limited thereto, and an appropriate transistor may be used depending on the circuit configuration, driving method, etc. For example, the transistor 300 may have a planar structure instead of a fin structure.

[0281] In the transistor 300 illustrated in FIG. 16, an insulator 320, an insulator 322, an insulator 324, and an insulator 326 are stacked in this order from the substrate 310 side.

[0282] The insulators 320, 322, 324, and 326 can be made of, for example, silicon oxide, silicon oxynitride, silicon nitride oxide, silicon nitride, aluminum oxide, aluminum oxynitride, aluminum nitride oxide, or aluminum nitride.

[0283] The insulator 322 may function as a planarizing film that planarizes steps caused by the insulator 320 and the transistor 300 covered with the insulator 322. For example, the top surface of the insulator 322 may be planarized by planarization treatment using a chemical mechanical polishing (CMP) method or the like to improve the planarity.

[0284] Furthermore, it is preferable to use a barrier insulating film for the insulator 324 that prevents impurities such as water and hydrogen from diffusing from the substrate 310 or the transistor 300 to a region above the insulator 324 (e.g., a region where the transistor 200, the light-emitting device 150a, the light-emitting device 150b, etc. are provided). Therefore, it is preferable to use an insulating material for the insulator 324 that has a function of suppressing the diffusion of impurities such as hydrogen atoms, hydrogen molecules, and water molecules (i.e., through which the impurities are less likely to permeate). Depending on the situation, it is also preferable to use a barrier insulating film for the insulator 324 that prevents ... nitrogen oxide molecules (e.g., N ２ O, NO, or NO ２ It is preferable to use an insulating material that has a function of suppressing the diffusion of impurities such as copper atoms (i.e., the impurities are less likely to permeate), or that has a function of suppressing the diffusion of oxygen (e.g., oxygen atoms and / or oxygen molecules).

[0285] An example of a film having a barrier property against hydrogen is silicon nitride formed by a CVD (Chemical Vapor Deposition) method.

[0286] The amount of desorption of hydrogen can be analyzed using, for example, thermal desorption spectroscopy (TDS). For example, in the TDS analysis, the amount of desorption of hydrogen from the insulator 324 is calculated as 10×10 per area of ​​the insulator 324 when the surface temperature of the film is in the range of 50° C. to 500° C. and the amount of desorption converted into hydrogen atoms is 10×10 １５ atoms / cm ２ Below 5 × 10, preferably １５ atoms / cm ２ The following is fine.

[0287] The insulator 326 preferably has a lower dielectric constant than the insulator 324. For example, the relative dielectric constant of the insulator 326 is preferably less than 4, and more preferably less than 3. Furthermore, for example, the relative dielectric constant of the insulator 326 is preferably 0.7 times or less, and more preferably 0.6 times or less, the relative dielectric constant of the insulator 324. By using a material with a low dielectric constant as the interlayer film, the parasitic capacitance that occurs between wirings can be reduced.

[0288] Furthermore, conductors 328 and 330 are embedded in the insulators 320, 322, 324, and 326, respectively, to connect to a light-emitting device or the like provided above the insulator 326. The conductors 328 and 330 function as plugs or wiring. Furthermore, for conductors that function as plugs or wiring, the same reference numeral may be used to refer to multiple structures. Furthermore, in this specification and the like, the wiring and the plug connecting to the wiring may be integrated. That is, there are cases where a portion of the conductor functions as wiring, and cases where a portion of the conductor functions as a plug.

[0289] The materials for each plug and wiring (conductor 328 and conductor 330) can be a conductive material such as a metal material, an alloy material, a metal nitride material, or a metal oxide material, and can be used in a single layer or a stacked layer. It is preferable to use a high-melting-point material such as tungsten or molybdenum, which has both heat resistance and conductivity, and tungsten is particularly preferable. Alternatively, it is preferable to form the plug and wiring from a low-resistance conductive material such as aluminum or copper. Using a low-resistance conductive material can reduce the wiring resistance.

[0290] A wiring layer may be provided over the insulator 326 and the conductor 330. For example, in FIG. 16 , an insulator 350, an insulator 352, and an insulator 354 are stacked in this order over the insulator 326 and the conductor 330. A conductor 356 is formed in the insulator 350, the insulator 352, and the insulator 354. The conductor 356 functions as a plug or wiring connected to the transistor 300. Note that the conductor 356 can be formed using a material similar to that of the conductors 328 and 330.

[0291] Note that, for example, the insulator 350 is preferably an insulator that has barrier properties against hydrogen, oxygen, and water, similar to the insulator 324. Similarly to the insulator 326, the insulators 352 and 354 are preferably insulators with a relatively low dielectric constant in order to reduce parasitic capacitance between wirings. The insulators 362 and 364 function as an interlayer insulating film and a planarizing film. The conductor 356 preferably includes a conductor that has barrier properties against hydrogen, oxygen, and water.

[0292] Note that, for example, tantalum nitride is preferably used as the conductor having a barrier property against hydrogen. Furthermore, by stacking tantalum nitride and highly conductive tungsten, the diffusion of hydrogen from the transistor 300 can be suppressed while maintaining the conductivity of the wiring. In this case, a structure in which the tantalum nitride layer having a barrier property against hydrogen is in contact with the insulator 350 having a barrier property against hydrogen is preferable.

[0293] In addition, an insulator 360, an insulator 362, and an insulator 364 are stacked in this order on the insulator 354 and on the conductor 356.

[0294] The insulator 360 is preferably an insulator having barrier properties against impurities such as water and hydrogen, similar to the insulator 324. Therefore, the insulator 360 can be made of, for example, a material that can be used for the insulator 324.

[0295] The insulators 362 and 364 function as an interlayer insulating film and a planarizing film. As the insulators 362 and 364, it is preferable to use an insulator that has a barrier property against impurities such as water and hydrogen, similar to the insulator 324. Therefore, a material that can be used for the insulator 324 can be used for one or both of the insulators 362 and 364.

[0296] Furthermore, openings are formed in the insulators 360, 362, and 364 in regions that overlap with part of the conductor 356, and the conductor 366 is provided to fill the openings. The conductor 366 is also formed over the insulator 362. For example, the conductor 366 functions as a plug or wiring connected to the transistor 300. Note that the conductor 366 can be formed using a material similar to that of the conductors 328 and 330.

[0297] An insulator 370 and an insulator 372 are stacked in this order on the insulator 364 and the conductor 366 .

[0298] The insulator 370 is preferably an insulator having barrier properties against impurities such as water and hydrogen, similar to the insulator 324. Therefore, the insulator 370 can be made of, for example, a material that can be used for the insulator 324.

[0299] The insulator 372 functions as an interlayer insulating film and a planarizing film. Similarly to the insulator 324, the insulator 372 is preferably an insulator having a barrier property against impurities such as water and hydrogen. For this reason, the insulator 372 can be made of a material that can be used for the insulator 324.

[0300] Furthermore, openings are formed in the insulators 370 and 372 in regions that overlap with part of the conductor 366, and the conductor 376 is provided to fill the openings. The conductor 376 is also formed on the insulator 372. After that, the conductor 376 is patterned into a shape such as a wiring, a terminal, or a pad by etching or the like.

[0301] For example, copper, aluminum, tin, zinc, tungsten, silver, platinum, or gold can be used for the conductor 376. Note that the conductor 376 is preferably made of the same components as the material used for the conductor 216 included in the pixel layer PXAL, which will be described later.

[0302] Next, an insulator 380 is formed to cover the insulator 372 and the conductor 376, and then planarization treatment using a chemical mechanical polishing (CMP) method is performed until the conductor 376 is exposed. This allows the conductor 376 to be formed on the substrate 310 as a wiring, a terminal, a pad, or the like.

[0303] As the insulator 380, it is preferable to use, for example, a film having barrier properties that prevent the diffusion of impurities such as water and hydrogen, similar to the insulator 324. That is, it is preferable to use, for the insulator 380, a material that can be used for the insulator 324. Alternatively, as the insulator 380, it is possible to use, for example, an insulator with a relatively low dielectric constant in order to reduce parasitic capacitance that occurs between wirings, similar to the insulator 326. That is, it is possible to use, for the insulator 380, a material that can be used for the insulator 326.

[0304] The pixel layer PXAL, for example, includes a substrate 210, a transistor 200, a light-emitting device 150 (light-emitting device 150a and light-emitting device 150b in FIG. 16 ), and a substrate 102. The pixel layer PXAL also includes, for example, an insulator 220, an insulator 222, an insulator 226, an insulator 250, an insulator 111a, an insulator 111b, an insulator 112, an insulator 113, an insulator 162, and a resin layer 163. The pixel layer PXAL also includes, for example, a conductor 216, a conductor 228, a conductor 230, a conductor 121 (conductor 121a and conductor 121b in FIG. 16 ), a conductor 122, and a conductor 123.

[0305] 16, for example, the insulator 202 functions as a bonding layer together with the insulator 380. The insulator 202 is preferably made of the same material as that used for the insulator 380, for example.

[0306] The substrate 210 is provided above the insulator 202. In other words, the insulator 202 is formed on the lower surface of the substrate 210. As the substrate 210, for example, a substrate that can be applied to the substrate 310 is preferably used. Note that in the display device 1000 of FIG. 16 , the substrate 310 will be described as a semiconductor substrate made of silicon.

[0307] For example, a transistor 200 is formed on the substrate 210. The transistor 200 functions as a Si transistor because it is formed on the substrate 210, which is a semiconductor substrate made of silicon. Note that the description of the transistor 300 is to be referred to for the configuration of the transistor 200.

[0308] An insulator 220 and an insulator 222 are provided above the transistor 200. The insulator 220 functions as an interlayer insulating film and a planarizing film, similar to the insulator 320. The insulator 222 functions as an interlayer insulating film and a planarizing film, similar to the insulator 322.

[0309] A plurality of openings are provided in the insulator 220 and the insulator 222. The plurality of openings are formed in regions overlapping with the source and drain of the transistor 200 and a region overlapping with the conductor 376. Of the plurality of openings, a conductor 228 is formed in the opening formed in the region overlapping with the source and drain of the transistor 200. Of the remaining openings, an insulator 214 is formed on side surfaces of the opening formed in the region overlapping with the conductor 376, and a conductor 216 is formed in the remaining openings. In particular, the conductor 216 may be called a TSV (Through Silicon Via).

[0310] The conductor 216 or the conductor 228 can be made of, for example, a material that can be used for the conductor 328. In particular, the conductor 216 is preferably made of the same material as the conductor 376.

[0311] The insulator 214 has a function of, for example, insulating the substrate 210 from the conductor 216. Note that the insulator 214 is preferably made of a material that can be used for the insulator 320 or the insulator 324, for example.

[0312] The insulator 380 and the conductor 376 formed on the substrate 310 and the insulator 202 and the conductor 216 formed on the substrate 210 are joined together by, for example, a bonding process.

[0313] As a pre-process before the bonding process, for example, planarization is performed on the substrate 310 side to make the heights of the surfaces of the insulator 380 and the conductor 376 uniform. Similarly, planarization is performed on the substrate 210 side to make the heights of the insulator 202 and the conductor 216 uniform.

[0314] In the bonding process, when bonding the insulator 380 and the insulator 202, that is, bonding the insulating layers together, a hydrophilic bonding method can be used in which high flatness is achieved by polishing or the like, then surfaces that have been hydrophilically treated with oxygen plasma or the like are brought into contact with each other to temporarily bond them, and then the final bonding is performed by dehydrating them through heat treatment.The hydrophilic bonding method also produces bonds at the atomic level, so it is possible to obtain mechanically excellent bonds.

[0315] Furthermore, when bonding conductor 376 and conductor 216, i.e., bonding conductors together, a surface activated bonding method can be used, in which oxide films and impurity adsorption layers on the surfaces are removed by sputtering or other methods, and cleaned and activated surfaces are brought into contact and bonded together. Alternatively, a diffusion bonding method can be used, in which surfaces are bonded together using a combination of temperature and pressure. Both methods involve bonding at the atomic level, resulting in excellent bonding not only electrically but also mechanically.

[0316] By carrying out the above-described bonding process, the conductor 376 on the substrate 310 side can be electrically connected to the conductor 216 on the substrate 210 side. Furthermore, a connection having sufficient mechanical strength can be obtained between the insulator 380 on the substrate 310 side and the insulator 202 on the substrate 210 side.

[0317] When bonding the substrates 310 and 210, since the bonding surfaces of each substrate contain a mixture of insulating and metal layers, a surface activated bonding method and a hydrophilic bonding method may be combined. For example, a bonding method may be used in which the surfaces are polished and then cleaned, and the surface of the metal layer is subjected to an anti-oxidation treatment, followed by a hydrophilic treatment. Alternatively, the surface of the metal layer may be made of a resistant metal such as gold and then subjected to a hydrophilic treatment.

[0318] Note that bonding methods other than those described above may be used to bond the substrate 310 and the substrate 210. For example, flip-chip bonding may be used to bond the substrate 310 and the substrate 210. Furthermore, when using flip-chip bonding, connection terminals such as bumps may be provided above the conductor 376 on the substrate 310 side or below the conductor 216 on the substrate 210 side. Examples of flip-chip bonding include a method in which a resin containing anisotropic conductive particles is injected between the insulator 380 and the insulator 202 and between the conductor 376 and the conductor 216 to bond them, and a method in which silver-tin solder is used to bond them. Alternatively, when the bumps and the conductors connected to the bumps are both made of gold, ultrasonic bonding may be used. Furthermore, in addition to the flip-chip bonding method described above, an underfill agent may be injected between the insulator 380 and the insulator 202 and between the conductor 376 and the conductor 216 to reduce physical stress such as impact and thermal stress. Furthermore, for example, a die bonding film may be used to bond the substrate 310 and the substrate 210 together.

[0319] An insulator 224 and an insulator 226 are stacked in this order on the insulator 222, the insulator 214, the conductor 216, and the conductor 228.

[0320] Like the insulator 324, the insulator 224 is preferably a barrier insulating film that prevents impurities such as water and hydrogen from diffusing into a region above the insulator 224. Therefore, it is preferable to use, for example, a material that can be used for the insulator 324 for the insulator 224.

[0321] The insulator 226 is preferably an interlayer film with a low dielectric constant, similar to the insulator 326. Therefore, the insulator 226 is preferably made of a material that can be used for the insulator 326, for example.

[0322] Furthermore, a conductor 230 electrically connected to the transistor 200, the light-emitting device 150, and the like is embedded in the insulator 224 and the insulator 226. The conductor 230 functions as a plug or wiring. For the conductor 230, for example, a material that can be used for the conductor 328 and the conductor 330 can be used.

[0323] On the insulators 224 and 226, the insulators 250, 111a, and 111b are stacked in this order.

[0324] The insulator 250 is preferably an insulator having barrier properties against impurities such as water and hydrogen, similar to the insulator 324. Therefore, the insulator 250 can be made of, for example, a material that can be used for the insulator 324.

[0325] The insulators 111a and 111b can be formed using various inorganic insulating films, such as an insulating oxide film, an insulating nitride film, an oxynitride insulating film, and an insulating nitride oxide film. The insulator 111a is preferably formed using an insulating oxide film or an oxynitride insulating film, such as a silicon oxide film, a silicon oxynitride film, or an aluminum oxide film. The insulator 111b is preferably formed using a nitride insulating film or a nitride oxide insulating film, such as a silicon nitride film or a silicon nitride oxide film. More specifically, the insulator 111a is preferably formed using a silicon oxide film, and the insulator 111b is preferably formed using a silicon nitride film. The insulator 111b preferably functions as an etching protective film. Alternatively, the insulator 111a may be formed using a nitride insulating film or a nitride oxide insulating film, and the insulator 111b may be formed using an oxide insulating film or an oxynitride insulating film. Although this embodiment illustrates an example in which a recess is provided in the insulator 111b, the insulator 111b does not necessarily have to be formed using a recess.

[0326] Furthermore, openings are formed in the insulator 250, the insulator 111a, and the insulator 111b in regions that overlap with part of the conductor 230, and the conductor 121 is provided to fill the openings. Note that in this specification and the like, the conductors 121a and 121b shown in FIG. 16 are collectively referred to as the conductors 121. Note that the conductor 121 can be provided using a material similar to that of the conductors 328 and 330.

[0327] In addition, the pixel electrode described in this embodiment mode includes, for example, a material that reflects visible light, and the counter electrode includes a material that transmits visible light.

[0328] The display device 1000 is a top-emission type. Light emitted from the light-emitting device is emitted toward the substrate 102. The substrate 102 is preferably made of a material that is highly transparent to visible light.

[0329] Above the conductor 121, a light emitting device 150a and a light emitting device 150b are provided.

[0330] Here, the light emitting device 150a and the light emitting device 150b will be described.

[0331] The light-emitting device described in this embodiment refers to a self-luminous light-emitting device such as an organic EL element (also referred to as an OLED (organic light-emitting diode)). Note that the light-emitting device electrically connected to the pixel circuit can be a self-luminous light-emitting device such as an LED (light-emitting diode), a micro LED, a QLED (quantum-dot light-emitting diode), or a semiconductor laser.

[0332] The conductor 122a and the conductor 122b can be formed, for example, by forming a conductive film over the insulator 111b, the conductor 121a, and the conductor 121b, and then performing a patterning process, an etching process, or the like on the conductive film.

[0333] The conductor 122a and the conductor 122b function as the anodes of the light-emitting device 150a and the light-emitting device 150b included in the display device 1000, respectively, as an example.

[0334] For example, indium tin oxide (sometimes referred to as ITO) can be used as the conductor 122a and the conductor 122b.

[0335] Furthermore, each of the conductors 122a and 122b may have a stacked structure of two or more layers instead of a single layer. For example, a conductor with high reflectivity to visible light may be used as the first layer conductor, and a conductor with high translucency may be used as the top layer conductor. Examples of conductors with high reflectivity to visible light include silver, aluminum, and an alloy film of silver (Ag), palladium (Pd), and copper (Cu) (Ag-Pd-Cu (APC) film). Examples of conductors with high translucency include the aforementioned indium tin oxide. Examples of the conductors 122a and 122b include a stacked film of aluminum sandwiched between a pair of titanium films (a stacked film of Ti, Al, and Ti in this order), a stacked film of silver sandwiched between a pair of indium tin oxide films (a stacked film of ITO, Ag, and ITO in this order), and the like.

[0336] An EL layer 141a is provided over the conductor 122a, and an EL layer 141b is provided over the conductor 122b.

[0337] It is preferable that the EL layer 141a and the EL layer 141b each have a light-emitting layer that emits light of a different color. For example, the EL layer 141a may have a light-emitting layer that emits light of one of red (R), green (G), and blue (B), and the EL layer 141b may have a light-emitting layer that emits light of one of the remaining two. Furthermore, although not shown in FIG. 16 , if an EL layer different from the EL layer 141a and the EL layer 141b is provided, the EL layer may have a light-emitting layer that emits light of the remaining one. In this way, the display device 1000 may have a structure (SBS structure) in which different light-emitting layers for each color are formed on multiple pixel electrodes (conductors 121a and 121b).

[0338] The combination of colors emitted by the light-emitting layers included in the EL layer 141 a and the EL layer 141 b is not limited to the above, and may be, for example, cyan, magenta, or yellow. Although the above example shows three colors, the number of colors emitted by the light-emitting device 150 included in the display device 1000 may be two, three, or four or more.

[0339] The EL layer 141a and the EL layer 141b may each include one or more of an electron injection layer, an electron transport layer, a hole injection layer, and a hole transport layer in addition to a layer containing a light-emitting organic compound (light-emitting layer).

[0340] In addition, the EL layer 141a and the EL layer 141b can be formed by a method such as a vapor deposition method (vacuum vapor deposition method, etc.), a coating method (dip coating method, die coating method, bar coating method, spin coating method, spray coating method, etc.), or a printing method (inkjet method, screen (stencil printing) method, offset (lithographic printing) method, flexography (relief printing) method, gravure method, microcontact method, etc.).

[0341] When a film formation method such as the coating method or the printing method is used, a polymer compound (e.g., an oligomer, a dendrimer, or a polymer), a medium molecular weight compound (a compound in the intermediate range between a low molecular weight and a high molecular weight: e.g., a molecular weight of 400 to 4000), an inorganic compound (e.g., a quantum dot material), etc. Examples of quantum dot materials that can be used include colloidal quantum dot materials, alloy quantum dot materials, core-shell quantum dot materials, and core quantum dot materials.

[0342] For example, light emitting device 150a and light emitting device 150b in FIG. 16 can be configured with layers including layer 4420, light emitting layer 4411, and layer 4430, as in light emitting device 150 shown in FIG. 17A.

[0343] The layer 4420 can have, for example, a layer containing a substance with high electron injection properties (electron injection layer) and a layer containing a substance with high electron transport properties (electron transport layer). The light-emitting layer 4411 contains, for example, a light-emitting compound. The layer 4430 can have, for example, a layer containing a substance with high hole injection properties (hole injection layer) and a layer containing a substance with high hole transport properties (hole transport layer).

[0344] A structure having a layer 4420, a light-emitting layer 4411, and a layer 4430 provided between a pair of electrodes (conductor 121 and conductor 122 described later) can function as a single light-emitting unit, and in this specification, the structure of Figure 17A is called a single structure.

[0345] 17B shows a modified example of the EL layer 141 included in the light-emitting device 150 shown in Fig. 17A. Specifically, the light-emitting device 150 shown in Fig. 17B includes a layer 4430-1 on the conductor 121, a layer 4430-2 on the layer 4430-1, a light-emitting layer 4411 on the layer 4430-2, a layer 4420-1 on the light-emitting layer 4411, a layer 4420-2 on the layer 4420-1, and a conductor 122 on the layer 4420-2. For example, when the conductor 121 is the anode and the conductor 122 is the cathode, the layer 4430-1 functions as a hole injection layer, the layer 4430-2 functions as a hole transport layer, the layer 4420-1 functions as an electron transport layer, and the layer 4420-2 functions as an electron injection layer. Alternatively, when the conductor 121 is a cathode and the conductor 122 is an anode, the layer 4430-1 functions as an electron injection layer, the layer 4430-2 functions as an electron transport layer, the layer 4420-1 functions as a hole transport layer, and the layer 4420-2 functions as a hole injection layer. Such a layer structure makes it possible to efficiently inject carriers into the light-emitting layer 4411 and increase the efficiency of carrier recombination in the light-emitting layer 4411.

[0346] Note that a structure in which a plurality of light-emitting layers (light-emitting layers 4411, 4412, and 4413) are provided between the layer 4420 and the layer 4430 as shown in FIG. 17C is also a variation of the single structure.

[0347] A stack having layers such as layer 4420, light-emitting layer 4411, and layer 4430 may be referred to as a light-emitting unit. A plurality of light-emitting units may be connected in series via an intermediate layer (charge generation layer). Specifically, as shown in FIG. 17D , a plurality of light-emitting units, such as light-emitting unit 4400a and light-emitting unit 4400b, may be connected in series via an intermediate layer (charge generation layer) 4440. In this specification, such a structure is referred to as a tandem structure. In this specification, a tandem structure may also be referred to as a stack structure. By forming a light-emitting device into a tandem structure, a light-emitting device capable of emitting light with high brightness can be obtained. By forming a light-emitting device into a tandem structure, improvement in the light-emitting efficiency of the light-emitting device and improvement in the lifespan of the light-emitting device can be expected. When the light-emitting device 150 of the display device 1000 of Figure 16 has a tandem structure, the EL layer 141 can be configured to include, for example, layer 4420, light-emitting layer 4411, and layer 4430 of light-emitting unit 4400a, intermediate layer 4440, and layer 4420, light-emitting layer 4412, and layer 4430 of light-emitting unit 4400b.

[0348] Furthermore, when displaying white, the SBS structure described above can reduce power consumption compared to the single and tandem structures described above. Therefore, when it is desired to keep power consumption low, the SBS structure is preferable. On the other hand, the single and tandem structures are preferable because their manufacturing processes are easier than those of the SBS structure, allowing for lower manufacturing costs or higher manufacturing yields.

[0349] The light-emitting device 150 can emit light in red, green, blue, cyan, magenta, yellow, or white, depending on the material of the EL layer 141. Furthermore, the color purity can be further improved by providing the light-emitting device 150 with a microcavity structure.

[0350] A light-emitting device that emits white light preferably has a configuration in which the light-emitting layer contains two or more types of light-emitting materials. For example, when white light emission is obtained using two light-emitting layers, light-emitting layers may be selected such that the emission colors of the two light-emitting layers are complementary to each other. Specifically, by making the emission color of the first light-emitting layer and the emission color of the second light-emitting layer complementary to each other, a configuration in which the light-emitting device as a whole emits white light can be obtained. Furthermore, when white light emission is obtained using three or more light-emitting layers, the emission colors of the three or more light-emitting layers may be combined to enable the light-emitting device as a whole to emit white light.

[0351] The light-emitting layer preferably contains two or more light-emitting materials that emit light of R (red), G (green), B (blue), Y (yellow), or O (orange). Alternatively, the light-emitting layer preferably contains two or more light-emitting materials, and the light emitted by each of the light-emitting materials preferably contains spectral components of two or more colors of R, G, and B.

[0352] 16, a gap is provided between two EL layers between adjacent light-emitting devices. Specifically, in FIG. 16, a recess is formed between adjacent light-emitting devices, and the insulator 112 covers the side surfaces (side surfaces of the conductor 121a, the conductor 122a, and the EL layer 141a, and side surfaces of the conductor 121b, the conductor 122b, and the EL layer 141b) and the bottom surface (a partial region of the insulator 111b) of the recess. Furthermore, the insulator 162 is formed on the insulator 112 so as to fill the recess. In this manner, the EL layer 141a and the EL layer 141b are preferably provided so as not to be in contact with each other. This can suitably prevent unintended light emission (also known as crosstalk) caused by current (also referred to as lateral leakage current) flowing through the two adjacent EL layers. Therefore, contrast can be improved, and a display device with high display quality can be realized. Furthermore, for example, by configuring the display device so that the lateral leakage current between the light-emitting devices is extremely low, the black display performed by the display device can be a display with extremely little light leakage (also called true black display).

[0353] The EL layers 141a and 141b can be formed by a method using photolithography. For example, an EL film to be the EL layers 141a and 141b is formed on the conductor 122, and then the EL film is patterned by photolithography to form the EL layers 141a and 141b. This also makes it possible to provide a gap between the two EL layers between adjacent light-emitting devices.

[0354] However, when an EL film is patterned using photolithography, damage (such as damage due to processing) may occur in the light-emitting layer, which may significantly impair reliability. Therefore, when manufacturing a display device according to one embodiment of the present invention, it is preferable to use a method in which a mask layer or the like is formed on a layer located above the light-emitting layer (e.g., a carrier transport layer or a carrier injection layer, more specifically, an electron transport layer or an electron injection layer) and the light-emitting layer is processed into an island shape. By applying this method, a highly reliable display device can be provided.

[0355] The insulator 112 can be an insulating layer containing an inorganic material. For example, an inorganic insulating film such as an insulating oxide film, a nitride insulating film, an oxynitride insulating film, or a nitride oxide insulating film can be used for the insulator 112. The insulator 112 may have a single-layer structure or a stacked-layer structure. Examples of oxide insulating films include a silicon oxide film, an aluminum oxide film, a magnesium oxide film, an indium gallium zinc oxide film, a gallium oxide film, a germanium oxide film, an yttrium oxide film, a zirconium oxide film, a lanthanum oxide film, a neodymium oxide film, a hafnium oxide film, and a tantalum oxide film. Examples of nitride insulating films include a silicon nitride film or an aluminum nitride film. Examples of oxynitride insulating films include a silicon oxynitride film or an aluminum oxynitride film. Examples of nitride oxide insulating films include a silicon nitride oxide film or an aluminum nitride oxide film. In particular, an aluminum oxide film is preferable because it has a high etching selectivity with respect to the EL layer and has a function of protecting the EL layer in the formation of the insulator 162 described later. In particular, by using an inorganic insulating film such as an aluminum oxide film, a hafnium oxide film, or a silicon oxide film formed by an ALD (Atomic Layer Deposition) method as the insulator 112, the insulator 112 can have few pinholes and has an excellent function of protecting the EL layer.

[0356] In this specification and elsewhere, an oxynitride refers to a material whose composition contains more oxygen than nitrogen, and a nitride oxide refers to a material whose composition contains more nitrogen than oxygen. For example, silicon oxynitride refers to a material whose composition contains more oxygen than nitrogen, and silicon nitride oxide refers to a material whose composition contains more nitrogen than oxygen.

[0357] The insulator 112 can be formed by a deposition method such as a sputtering method, a CVD method, a pulsed laser deposition (PLD) method, or an ALD method. The insulator 112 is preferably formed by an ALD method because of its good coverage.

[0358] The insulator 162 provided on the insulator 112 has the function of planarizing recesses formed in the insulator 112 between adjacent light-emitting devices. In other words, the insulator 162 has the effect of improving the flatness of the surface on which the conductor 123 (described later) is formed. For example, an insulating layer containing an organic material can be suitably used as the insulator 162. Examples of suitable materials for the insulator 162 include acrylic resin, polyimide resin, epoxy resin, imide resin, polyamide resin, polyimideamide resin, silicone resin, siloxane resin, benzocyclobutene resin, phenolic resin, and precursors of these resins. The insulator 162 may also be made of an organic material such as polyvinyl alcohol (PVA), polyvinyl butyral, polyvinylpyrrolidone, polyethylene glycol, polyglycerin, pullulan, water-soluble cellulose, or alcohol-soluble polyamide resin. The insulator 162 may also be made of a photosensitive resin. For example, a photoresist may be used as the photosensitive resin. The photosensitive resin may be a positive type material or a negative type material.

[0359] The difference in height between the top surface of the insulator 162 and the top surface of the EL layer 141a or 141b is, for example, preferably 0.5 times or less, more preferably 0.3 times or less, the thickness of the insulator 162. For example, the insulator 162 may be provided so that the top surface of the EL layer 141a or 141b is higher than the top surface of the insulator 162. For example, the insulator 162 may be provided so that the top surface of the insulator 162 is higher than the top surface of the light-emitting layer of the EL layer 141a or 141b.

[0360] A conductor 123 is provided over the EL layer 141a, the EL layer 141b, the insulator 112, and the insulator 162. An insulator 113 is provided over each of the light-emitting devices 150a and 150b.

[0361] The conductor 123 functions as, for example, a common electrode for the light-emitting device 150 a and the light-emitting device 150 b. In order to emit light from the light-emitting device 150 upward in the display device 1000, the conductor 123 preferably includes a light-transmitting conductive material.

[0362] The conductor 123 is preferably a material that is highly conductive and has light-transmitting and light-reflecting properties (sometimes called a semi-transparent / semi-reflective electrode). For example, an alloy of silver and magnesium or indium tin oxide can be used for the conductor 123.

[0363] The insulator 113 is sometimes referred to as a protective layer, and providing the insulator 113 above each of the light-emitting devices 150a and 150b can improve the reliability of the light-emitting devices. In other words, the insulator 113 functions as a passivation film that protects the light-emitting devices 150a and 150b. Therefore, the insulator 113 is preferably made of a material that prevents the intrusion of water and the like. For example, the insulator 113 can be made of a material that can be used for the insulator 111a or the insulator 111b. Specifically, for example, aluminum oxide, silicon nitride, or silicon nitride oxide can be used.

[0364] A resin layer 163 is provided on the insulator 113. Furthermore, a substrate 102 is provided on the resin layer 163.

[0365] The substrate 102 is preferably, for example, a light-transmitting substrate. By using a light-transmitting substrate for the substrate 102, light emitted from the light-emitting device 150a and the light-emitting device 150b can be emitted upward from the substrate 102.

[0366] Note that the display device of one embodiment of the present invention is not limited to the structure of the display device 1000 illustrated in Fig. 16. The structure of the display device of one embodiment of the present invention may be changed as appropriate.

[0367] For example, the transistor 200 included in the pixel layer PXAL of the display device 1000 in Fig. 16 may be a transistor having a metal oxide in a channel formation region (hereinafter referred to as an OS transistor). The display device 1000 shown in Fig. 18 has a configuration in which a transistor 500 (OS transistor) instead of the transistor 200 and a light-emitting device 150 are provided above the circuit layer SICL and the wiring layer LINL of the display device 1000 in Fig. 16.

[0368] 18 , the transistor 500 is provided over an insulator 512. The insulator 512 is provided above the insulator 364 and the conductor 366, and a substance having a barrier property against oxygen and hydrogen is preferably used for the insulator 512. Specifically, the insulator 512 can be formed using, for example, silicon oxide, silicon oxynitride, silicon nitride oxide, silicon nitride, aluminum oxide, aluminum oxynitride, aluminum nitride oxide, or aluminum nitride.

[0369] As an example of a film having a barrier property against hydrogen, silicon nitride formed by a CVD method can be used. Here, hydrogen diffusion into a semiconductor element including an oxide semiconductor, such as the transistor 500, may degrade the characteristics of the semiconductor element. Therefore, a film that suppresses hydrogen diffusion is preferably used between the transistor 500 and the transistor 300. Specifically, the film that suppresses hydrogen diffusion is a film that releases a small amount of hydrogen.

[0370] For example, the insulator 512 can be made of a material similar to that of the insulator 320. By using a material with a relatively low dielectric constant for these insulators, parasitic capacitance between wirings can be reduced. For example, the insulator 512 can be made of a silicon oxide film, a silicon oxynitride film, or the like.

[0371] An insulator 514 is provided over the insulator 512, and the transistor 500 is provided over the insulator 514. An insulator 576 is formed over the insulator 512 to cover the transistor 500. An insulator 581 is formed over the insulator 576.

[0372] The insulator 514 is preferably a film having a barrier property that prevents impurities such as water and hydrogen from diffusing from the substrate 310 or a region where circuit elements and the like below the insulator 512 are provided to the region where the transistor 500 is provided. Therefore, the insulator 514 can be made of silicon nitride formed by a CVD method, for example.

[0373] As described above, the transistor 500 illustrated in FIG. 18 is an OS transistor including a metal oxide in a channel formation region. The metal oxide may be, for example, an In-M-Zn oxide containing indium, an element M, and zinc (the element M is one or more elements selected from aluminum, gallium, yttrium, tin, copper, vanadium, beryllium, boron, titanium, iron, nickel, germanium, zirconium, molybdenum, lanthanum, cerium, neodymium, hafnium, tantalum, tungsten, and magnesium). Specifically, for example, an oxide containing indium, gallium, and zinc (sometimes referred to as IGZO) may be used. For example, an oxide containing indium, aluminum, and zinc (sometimes referred to as IAZO) may be used. For example, an oxide containing indium, aluminum, gallium, and zinc (sometimes referred to as IAGZO) may be used. In addition to the above, the metal oxide may be In-Ga oxide, In-Zn oxide, or indium oxide.

[0374] In particular, it is preferable to use a metal oxide functioning as a semiconductor having a band gap of 2 eV or more, preferably 2.5 eV or more. By using such a metal oxide having a wide band gap, the off-state current (sometimes referred to as leakage current) of a transistor can be reduced.

[0375] In particular, it is preferable to use a transistor, such as an OS transistor, whose off-state current is sufficiently small even when the source-drain voltage is large as the driving transistor included in the pixel circuit. By using an OS transistor as the driving transistor, the amount of off-state current flowing in the light-emitting device can be reduced when the driving transistor is in an off state, thereby sufficiently reducing the luminance of light emitted from the light-emitting device through which the off-state current flows. Therefore, when a driving transistor with a large off-state current is compared with a driving transistor with a small off-state current, when black is displayed in the pixel circuit, the light emission luminance of the pixel circuit including the driving transistor with a small off-state current can be lowered compared to the pixel circuit including the driving transistor with a large off-state current. In other words, by using an OS transistor, it is possible to suppress floating black when black is displayed in the pixel circuit.

[0376] The off-state current of the OS transistor per 1 μm of channel width at room temperature is 1 aA (1×10 −１８ A) Below, 1zA (1×10 −２１ A) or less, or 1 yA (1 x 10 −２４ Note that the off-state current of a Si transistor per 1 μm of channel width at room temperature can be 1 fA (1×10 −１５ A) More than 1pA (1×10 −１２ Therefore, it can be said that the off-state current of an OS transistor is about 10 orders of magnitude lower than that of a Si transistor.

[0377] Furthermore, in order to increase the emission luminance of a light-emitting device included in a pixel circuit, it is necessary to increase the amount of current flowing through the light-emitting device. To achieve this, it is necessary to increase the source-drain voltage of a driving transistor included in the pixel circuit. Since an OS transistor has higher voltage tolerance between its source and drain than a Si transistor, a high voltage can be applied between the source and drain of the OS transistor. Therefore, by using an OS transistor as the driving transistor included in a pixel circuit, a high voltage can be applied between the source and drain of the OS transistor, thereby increasing the amount of current flowing through the light-emitting device and increasing the emission luminance of the light-emitting device.

[0378] Furthermore, when the transistor operates in the saturation region, the OS transistor can reduce the change in source-drain current with respect to a change in gate-source voltage compared to a Si transistor. Therefore, by using an OS transistor as a driving transistor included in a pixel circuit, the current flowing between the source and drain can be precisely determined by changing the gate-source voltage, and the amount of current flowing through the light-emitting device can be precisely controlled. Therefore, the light emission luminance of the light-emitting device can be precisely controlled (the gradation in the pixel circuit can be increased).

[0379] Furthermore, in terms of the saturation characteristics of the current that flows when a transistor operates in a saturation region, an OS transistor can flow a constant current (saturation current) that is more stable than a Si transistor, even when the source-drain voltage gradually increases. Therefore, by using an OS transistor as a driving transistor, a stable constant current can be flowed through a light-emitting device, for example, even when the current-voltage characteristics of a light-emitting device containing an EL material vary. In other words, when an OS transistor operates in a saturation region, the source-drain current hardly changes even when the source-drain voltage increases, and thus the light-emitting luminance of the light-emitting device can be stabilized.

[0380] As described above, by using an OS transistor as a driving transistor included in a pixel circuit, it is possible to achieve "suppression of black floating," "increase in light emission luminance," "multiple gray levels," "suppression of variations in light-emitting devices," and the like. Therefore, a display device including the pixel circuit can display a clear and smooth image, and as a result, one or more of image clarity (image sharpness) and a high contrast ratio can be observed. Note that image clarity (image sharpness) may refer to either or both of suppression of motion blur and suppression of black floating. Furthermore, by configuring the driving transistor included in the pixel circuit to have an extremely low off-state current, black display performed by the display device can be achieved with extremely little light leakage (true black display).

[0381] One or both of the insulators 576 and 581 preferably function as a barrier insulating film that prevents impurities such as water and hydrogen from diffusing into the transistor 500 from above the transistor 500. Therefore, at least one of the insulators 576 and 581 contains hydrogen atoms, hydrogen molecules, water molecules, nitrogen atoms, nitrogen molecules, and nitrogen oxide molecules (for example, N ２ O, NO, and NO ２ It is preferable to use an insulating material that has a function of suppressing the diffusion of impurities such as copper atoms or copper atoms (i.e., the impurities are less likely to permeate through it). Alternatively, it is preferable to use an insulating material that has a function of suppressing the diffusion of oxygen (e.g., oxygen atoms and / or oxygen molecules) (i.e., the oxygen is less likely to permeate through it).

[0382] One or both of the insulators 576 and 581 preferably have a function of suppressing diffusion of oxygen and impurities such as water and hydrogen. For one or both of the insulators 576 and 581, for example, aluminum oxide, magnesium oxide, hafnium oxide, gallium oxide, indium-gallium-zinc oxide, silicon nitride, or silicon nitride oxide can be used.

[0383] Openings for forming plugs, wirings, and the like are provided in each of the insulator 581, the insulator 576, and one of the source and drain electrodes of the transistor 500. In addition, a conductor 540 functioning as a plug, wiring, or the like is formed in the opening.

[0384] For example, the insulator 581 is preferably an insulator that functions as an interlayer film, a planarizing film, or the like.

[0385] An insulator 224 and an insulator 226 are formed above the insulator 581 and the conductor 540. Note that for descriptions of insulators, conductors, circuit elements, and the like located above the insulator 224, including the insulator 224, please refer to the description of the display device 1000 in FIG.

[0386] 16 shows a display device formed by bonding a semiconductor substrate on which a light-emitting device 150, a pixel circuit, and the like are formed and a semiconductor substrate on which a driver circuit and the like are formed, and FIG. 18 shows a display device in which the light-emitting device 150, the pixel circuit, and the like are formed on a semiconductor substrate on which a driver circuit is formed, but the display device according to the electronic device of one embodiment of the present invention is not limited to FIG. 16 or 18. The display device according to the electronic device of one embodiment of the present invention may be, for example, a display device having a structure in which only one layer of transistors is formed, instead of a layer structure in which two or more transistors are stacked.

[0387] Specifically, for example, a display device related to the electronic device of one embodiment of the present invention may have a structure including a circuit including a transistor 200 formed over a substrate 210 and a light-emitting device 150 provided above the transistor 200, as in the display device 1000 illustrated in Figure 19A. Alternatively, for example, a display device 1000 may have a structure in which an insulator 512 is formed over a substrate 501, and the transistor 500 is provided over the insulator 512 and the light-emitting device 150 is provided above the transistor 500, as in the display device 1000 illustrated in Figure 19B. Note that the substrate 501 can be, for example, a substrate that can be used for the substrate 310, and is preferably a glass substrate.

[0388] 19A and 19B , the display device according to the electronic device of one embodiment of the present invention may have a structure in which only one layer of transistors is formed and a light-emitting device 150 is provided above the transistor. Although not shown, the display device according to the electronic device of one embodiment of the present invention may have a layer structure in which three or more layers of transistors are formed.

[0389] <Example of Sealing Structure of Display Device> Next, a sealing structure of the light-emitting device 150 that can be applied to the display device 1000 of FIG. 16 will be described.

[0390] Fig. 20A is a cross-sectional view showing an example of a sealing structure that can be applied to the display device 1000 of Fig. 16. Specifically, Fig. 20A illustrates an edge of the display device 1000 of Fig. 16 and materials provided around the edge. Fig. 20A also illustrates an excerpt of only a portion of the pixel layer PXAL of the display device 1000. Specifically, Fig. 20A illustrates the insulator 250, as well as insulators, conductors, light-emitting device 150a, and the like that are positioned above the insulator 250.

[0391] 20A , an opening is provided, for example. A conductor 121CM is provided in the opening, for example. The conductor 123 is electrically connected to wiring provided below the insulator 250 via the conductor 121CM. This allows a potential (e.g., an anode potential or a cathode potential in the light-emitting device 150a, etc.) to be supplied to the conductor 123, which functions as a common electrode. Note that at least one of the conductors included in the region 123CM and the conductors around the region 123CM may be referred to as a connection electrode.

[0392] Furthermore, for the conductor 121CM, for example, a material applicable to the conductor 121 can be used.

[0393] 20A , an adhesive layer 164 is provided on or around an end of a resin layer 163. Specifically, the display device 1000 is configured so that the insulator 113 and the substrate 102 are bonded to each other via the adhesive layer 164.

[0394] The adhesive layer 164 is preferably made of a material that suppresses the permeation of impurities such as moisture. By using such a material for the adhesive layer 164, the reliability of the display device 1000 can be improved.

[0395] A structure in which the insulator 113 and the substrate 102 are bonded together via the resin layer 163 using the adhesive layer 164 is sometimes called a solid sealing structure. In addition, in the solid sealing structure, if the resin layer 163 has the function of bonding the insulator 113 and the substrate 102 together, similar to the adhesive layer 164, the adhesive layer 164 is not necessarily provided.

[0396] On the other hand, a structure in which the insulator 113 and the substrate 102 are bonded together using the adhesive layer 164 and filled with an inert gas instead of the resin layer 163 is sometimes called a hollow sealing structure (not shown). Examples of the inert gas include nitrogen and argon.

[0397] 20A , two or more adhesive layers may be stacked. For example, as shown in FIG. 20B , an adhesive layer 165 may be provided inside adhesive layer 164 (between adhesive layer 164 and resin layer 163). Stacking two or more adhesive layers can further suppress the permeation of impurities such as moisture, thereby further improving the reliability of display device 1000.

[0398] Furthermore, a desiccant may be mixed into the adhesive layer 165. This allows the moisture contained in the adhesive layer 164, the resin layer 163 formed inside the adhesive layer 165, the insulator, the conductor, and the EL layer to be adsorbed by the desiccant, thereby improving the reliability of the display device 1000.

[0399] Furthermore, although the display device 1000 in FIG. 20B has a solid sealing structure, it may have a hollow sealing structure.

[0400] 20A and 20B, an inert liquid may be filled in place of the resin layer 163. Examples of the inert liquid include a fluorine-based inert liquid.

[0401] <Modification of Display Device> One embodiment of the present invention is not limited to the above-described configuration, and the above-described configuration can be modified as appropriate depending on the situation. Modifications of the display device 1000 in FIG. 16 will be described below with reference to FIGS. 21A to 22B . Note that FIGS. 21A to 22B illustrate only a portion of the pixel layer PXAL of the display device 1000. Specifically, FIGS. 21A to 22B each illustrate the insulator 250, the insulator 111a, the insulators positioned above the insulator 111a, the conductors, the light-emitting device 150a, and the light-emitting device 150b. In particular, FIGS. 21A to 22B also illustrate the light-emitting device 150c, the conductor 121c, the conductor 122c, and the EL layer 141c.

[0402] Note that, for example, the color of light emitted by the EL layer 141c may be different from the colors of light emitted by the EL layer 141a and the EL layer 141b. Furthermore, for example, the display device 1000 may be configured so that the number of colors emitted by the light-emitting devices 150a to 150c is two. Furthermore, for example, the display device 1000 may be configured so that the number of colors emitted by the light-emitting devices is increased to four or more (not shown).

[0403] 21A , for example, the display device 1000 may have a configuration in which the EL layer 142 is formed on the EL layers 141a to 141c. Specifically, for example, in FIG. 17A , when the EL layers 141a to 141c include the layer 4430 and the light-emitting layer 4411, the EL layer 142 may include the layer 4420. In this case, the layer 4420 included in the EL layer 142 functions as a common layer in each of the light-emitting devices 150a to 150c. Similarly, for example, in FIG. 17C , when the EL layers 141a to 141c include the layer 4430, the light-emitting layer 4411, the light-emitting layer 4412, and the light-emitting layer 4413, the EL layer 142 includes the layer 4420, so that the layer 4420 included in the EL layer 142 functions as a common layer in each of the light-emitting devices 150a to 150c. Furthermore, for example, in FIG. 17D, when the EL layers 141a to 141c are configured to include the layer 4430, the light-emitting layer 4412, and the layer 4420 of the light-emitting unit 4400b, the intermediate layer 4440, and the layer 4430 and the light-emitting layer 4411 of the light-emitting unit 4400a, the EL layer 142 is configured to include the layer 4420 of the light-emitting unit 4400b, so that the layer 4420 of the light-emitting unit 4400a included in the EL layer 142 functions as a common layer in each of the light-emitting devices 150a to 150c.

[0404] Furthermore, for example, the display device 1000 may have a configuration in which the insulator 113 has a stacked structure of two or more layers instead of a single layer. For example, the insulator 113 may have a three-layer stacked structure in which an insulator made of an inorganic material is used as a first layer, an insulator made of an organic material is used as a second layer, and an insulator made of an inorganic material is used as a third layer. Figure 21B illustrates a cross-sectional view of a portion of the display device 1000 in which the insulator 113 has a multi-layered structure including the insulators 113a, 113b, and 113c, in which the insulator 113a is an inorganic insulator, the insulator 113b is an organic insulator, and the insulator 113c is an inorganic insulator.

[0405] 17A , the display device 1000 may have a configuration in which a microcavity structure (a microresonator structure) is provided in each of the EL layers 141 a to 141 c. The microcavity structure refers to a structure in which, for example, a light-transmitting and light-reflective conductive material is used for the conductor 122 that is the upper electrode (common electrode) and a light-reflective conductive material is used for the conductor 121 that is the lower electrode (pixel electrode), and the distance between the bottom surface of the light-emitting layer and the top surface of the lower electrode, that is, the film thickness of the layer 4430 in FIG. 17A , is set to a thickness corresponding to the wavelength of the color of light emitted by the light-emitting layer included in the EL layer 141.

[0406] For example, since light reflected by the lower electrode and returned (reflected light) causes significant interference with light directly incident on the upper electrode from the light-emitting layer (incident light), it is preferable to adjust the optical distance between the lower electrode and the light-emitting layer to (2n-1)λ / 4 (where n is a natural number greater than or equal to 1, and λ is the wavelength of the emitted light to be amplified). By adjusting this optical distance, the phases of the reflected light and incident light, each of which has a wavelength λ, can be matched, thereby further amplifying the light emitted from the light-emitting layer. On the other hand, if the reflected light and incident light have a wavelength other than λ, they will no longer match in phase, resulting in attenuation without resonance.

[0407] The EL layer included in the microcavity structure may have multiple light-emitting layers or a single light-emitting layer. The microcavity structure may also be combined with the tandem light-emitting device structure described above, in which multiple EL layers are provided in one light-emitting device with a charge-generating layer sandwiched therebetween, and each EL layer may have a single or multiple light-emitting layers.

[0408] The microcavity structure makes it possible to increase the light emission intensity of a specific wavelength in the front direction, thereby reducing power consumption. In particular, in the case of devices for XR such as VR or AR, light from the light-emitting device is often incident on the eyes of a user wearing the device in the front direction, so it can be said that providing a microcavity structure in a display device for XR devices is preferable. Note that in the case of a display device that displays images using sub-display pixels of four colors (red, yellow, green, and blue), in addition to the brightness improvement effect of yellow emission, the microcavity structure that can be applied to all sub-display pixels is suitable for each color wavelength, resulting in a display device with good characteristics.

[0409] 22A shows a cross-sectional view of a portion of the display device 1000 having a microcavity structure, as an example. Furthermore, when the light-emitting device 150a has a light-emitting layer that emits blue (B) light, the light-emitting device 150b has a light-emitting layer that emits green (G), and the light-emitting device 150c has a light-emitting layer that emits red (R), it is preferable that the thicknesses of the EL layers 141a, 141b, and 141c increase in this order, as shown in FIG. 22A . Specifically, the thicknesses of the layers 4430 included in the EL layers 141a, 141b, and 141c may be determined according to the color of light emitted by each light-emitting layer. In this case, the layer 4430 included in the EL layer 141a is the thinnest, and the layer 4430 included in the EL layer 141c is the thickest.

[0410] 22B shows, as an example, a configuration in which coloring layers 166a, 166b, and 166c are provided between the resin layer 163 and the substrate 102. Note that the coloring layers 166a to 166c can be formed on the substrate 102. In addition, when the light-emitting device 150a has a light-emitting layer that emits blue (B), the light-emitting device 150b has a light-emitting layer that emits green (G), and the light-emitting device 150c has a light-emitting layer that emits red (R), the coloring layer 166a is blue, the coloring layer 166b is green, and the coloring layer 166c is red.

[0411] 22B can be constructed by bonding the substrate 102 provided with the colored layers 166a to 166c to the substrate 310 on which the light-emitting devices 150a to 150c are formed, via the resin layer 163. At this time, the bonding is preferably performed so that the light-emitting device 150a and the colored layer 166a overlap, the light-emitting device 150b and the colored layer 166b overlap, and the light-emitting device 150c and the colored layer 166c overlap. By providing the colored layers 166a to 166c in the display device 1000, for example, light emitted by the light-emitting device 150b does not exit above the substrate 102 via the colored layer 166a or the colored layer 166c, but exits above the substrate 102 via the colored layer 166b. In other words, since it is possible to block light from the light-emitting device 150 of the display device 1000 in an oblique direction (the direction of the elevation angle when the top surface of the substrate 102 is considered to be a horizontal plane), it is possible to reduce the dependency of the display device 1000 on the viewing angle, and it is possible to prevent a decrease in the display quality of the image displayed on the display device 1000 when viewed from an oblique angle.

[0412] The colored layers 166a to 166c formed on the substrate 102 may be covered with a resin called an overcoat layer. Specifically, the display device 1000 may be stacked in the following order (not shown): the resin layer 163, the overcoat layer, the colored layers 166a to 166c, and the substrate 102. Note that examples of resins used for the overcoat layer include thermosetting materials that are light-transmitting and based on acrylic resin or epoxy resin.

[0413] Furthermore, for example, the display device 1000 may include a black matrix (not shown) in addition to the colored layers. By providing a black matrix between the colored layers 166 a and 166 b, between the colored layers 166 b and 166 c, and between the colored layers 166 c and 166 a, it is possible to more effectively block light from the light-emitting device 150 of the display device 1000 in an oblique direction (the direction of the elevation angle when the top surface of the substrate 102 is considered to be a horizontal plane), thereby more effectively preventing a decrease in the display quality of an image displayed on the display device 1000 when the image is viewed obliquely.

[0414] 22B , when the display device has a colored layer, the light-emitting devices 150 a to 150 c included in the display device may all be light-emitting devices that emit white light (not shown). The light-emitting devices may have, for example, a single structure or a tandem structure.

[0415] Although the above-described structure of the display device 1000 includes the conductors 121a to 121c as anodes and the conductor 122 as a cathode, the display device 1000 may include the conductors 121a to 121c as cathodes and the conductor 122 as an anode. That is, in the manufacturing process described above, the stack order of the hole injection layer, the hole transport layer, the light-emitting layer, the electron transport layer, and the electron injection layer included in the EL layers 141a to 141c and the EL layer 142 may be reversed.

[0416] <Structural Example of Insulator 162> Next, a cross-sectional structure of a region including the insulator 162 and its periphery in the display device 1000 will be shown.

[0417] 23A shows an example in which the thicknesses of the EL layers 141a and 141b are different from each other. The height of the top surface of the insulator 112 is the same or approximately the same as the height of the top surface of the EL layer 141a on the EL layer 141a side, and is the same or approximately the same as the height of the top surface of the EL layer 141b on the EL layer 141b side. The top surface of the insulator 112 has a gentle slope, with the EL layer 141a side being higher and the EL layer 141b side being lower. In this way, the heights of the insulators 112 and 162 are preferably the same as the height of the top surfaces of the adjacent EL layers. Alternatively, the top surface may have a flat portion that is the same as the height of the top surface of one of the adjacent EL layers.

[0418] 23B, the top surface of the insulator 162 has a region higher than the top surfaces of the EL layers 141a and 141b. The top surface of the insulator 162 has a shape that gently bulges outward toward the center.

[0419] 23C , the display device 1000 has a region in which the top surface of the insulator 112 is higher than the top surfaces of the EL layers 141a and 141b. Furthermore, in a region including the insulator 162 and its periphery, the display device 1000 has a first region located on at least one of the mask layers 118 and 119. The first region is higher than the top surfaces of the EL layers 141a and 141b, and a part of the insulator 162 is formed in the first region. Furthermore, in a region including the insulator 162 and its periphery, the display device 1000 has a second region located on at least one of the mask layers 118 and 119. The second region is higher than the top surfaces of the EL layers 141a and 141b, and a part of the insulator 162 is formed in the second region.

[0420] 23D, the top surface of the insulator 162 has an area that is lower than the top surfaces of the EL layers 141a and 141b. The top surface of the insulator 162 has a gently sloping shape that is concave toward the center.

[0421] 23E, the upper surface of the insulator 112 has a region higher than the upper surface of the EL layer 141a and the upper surface of the EL layer 141b. That is, the insulator 112 protrudes from the surface on which the EL layer 141 is to be formed, forming a convex portion.

[0422] When forming the insulator 112, for example, if the insulator 112 is formed so that it is aligned or approximately aligned with the height of the mask layer, the insulator 112 may be formed in a protruding shape as shown in FIG. 23E.

[0423] 23F, the upper surface of the insulator 112 has a region that is lower than the upper surfaces of the EL layers 141a and 141b. That is, the insulator 112 forms a recess on the surface on which the EL layer 141 is to be formed.

[0424] In this way, the insulators 112 and 162 can be applied in various shapes.

[0425] <Configuration Example of Pixel Circuit> Here, a configuration example of a pixel circuit that can be provided in the pixel layer PXAL will be described.

[0426] 24A and 24B show a configuration example of a pixel circuit that can be provided in the pixel layer PXAL and a light-emitting device 150 connected to the pixel circuit. Also, FIG. 24A is a diagram showing the connections of each circuit element included in the pixel circuit 400 provided in the pixel layer PXAL, and FIG. 24B is a diagram schematically showing the hierarchical relationship of a circuit layer SICL including a circuit 30 including a drive circuit SD, a drive circuit GD, etc., a layer OSL including multiple transistors included in the pixel circuit, and a layer EML including a light-emitting device 150. Note that the pixel layer PXAL of the display device 1000 shown in FIG. 24B includes, as an example, a layer OSL and a layer EML. Also, transistors 500A, 500B, 500C, etc. included in the layer OSL shown in FIG. 24B correspond to the transistor 200 in FIG. 16 . 16. The light emitting device 150 included in the layer EML shown in FIG. 24B corresponds to the light emitting device 150a or the light emitting device 150b in FIG.

[0427] 24A and 24B includes a pixel circuit 400 including a transistor 500A, a transistor 500B, a transistor 500C, and a capacitor 600. The transistors 500A, 500B, and 500C can be transistors applicable to the transistor 200 described above, for example. That is, the transistors 500A, 500B, and 500C can be Si transistors. Alternatively, the transistors 500A, 500B, and 500C can be transistors applicable to the transistor 500 described above, for example. That is, the transistors 500A, 500B, and 500C can be OS transistors. In particular, when the transistors 500A, 500B, and 500C are OS transistors, each of the transistors 500A, 500B, and 500C preferably includes a back gate electrode. In this case, the back gate electrode may be supplied with the same signal as the gate electrode, or may be supplied with a signal different from the gate electrode. Although back gate electrodes are illustrated in FIGS. 24A and 24B, the transistors 500A, 500B, and 500C may not include a back gate electrode.

[0428] The transistor 500B includes a gate electrode electrically connected to the transistor 500A, a first electrode electrically connected to the light-emitting device 150, and a second electrode electrically connected to the wiring ANO. The wiring ANO is a wiring for applying a potential for supplying a current to the light-emitting device 150.

[0429] The transistor 500A has a first terminal electrically connected to the gate electrode of the transistor 500B, a second terminal electrically connected to the wiring SL that functions as a source line, and a gate electrode that has the function of controlling the conductive state or non-conductive state based on the potential of the wiring GL1 that functions as a gate line.

[0430] The transistor 500C includes a first terminal electrically connected to the wiring V0, a ​​second terminal electrically connected to the light-emitting device 150, and a gate electrode having a function of controlling the conductive state or non-conductive state based on the potential of the wiring GL2 functioning as a gate line. The wiring V0 is a wiring for applying a reference potential and a wiring for outputting a current flowing through the pixel circuit 400 to the drive circuit 30.

[0431] The capacitor 600 includes a conductive film electrically connected to the gate electrode of the transistor 500B and a conductive film electrically connected to the second electrode of the transistor 500C.

[0432] The light-emitting device 150 includes a first electrode electrically connected to the first electrode of the transistor 500B and a second electrode electrically connected to a wiring VCOM. The wiring VCOM is a wiring for applying a potential for supplying a current to the light-emitting device 150.

[0433] This allows the intensity of light emitted by light-emitting device 150 to be controlled in accordance with an image signal applied to the gate electrode of transistor 500B. Furthermore, the reference potential of wiring V0 applied via transistor 500C can suppress variations in the gate-source voltage of transistor 500B.

[0434] Furthermore, a current value that can be used to set pixel parameters can be output from the wiring V0. More specifically, the wiring V0 can function as a monitor line for outputting the current flowing through the transistor 500B or the current flowing through the light-emitting device 150 to the outside. The current output to the wiring V0 is converted into a voltage by, for example, a source follower circuit and output to the outside. Alternatively, the current can be converted into a digital signal by, for example, an A-D converter and output to the AI ​​accelerator described in the above embodiment.

[0435] In the configuration shown as an example in FIG. 24B , the wiring electrically connecting the pixel circuits 400 and the driver circuit 30 can be shortened, thereby reducing the wiring resistance of the wiring. This allows data to be written at high speed, enabling the display device 1000 to be driven at high speed. This allows the display device 1000 to have a sufficient frame period even if the display device 1000 has a large number of pixel circuits 400, thereby increasing the pixel density of the display device 1000. Furthermore, increasing the pixel density of the display device 1000 can increase the resolution of images displayed by the display device 1000. For example, the pixel density of the display device 1000 can be 1000 ppi or more, 5000 ppi or more, or 7000 ppi or more. Therefore, the display device 1000 can be used as a display device for AR or VR, for example, and can be suitably applied to electronic devices such as HMDs, in which the display unit is close to the user.

[0436] 24A and 24B show an example of the pixel circuit 400 including three transistors in total, but the pixel circuit of the electronic device of one embodiment of the present invention is not limited to this. Below, a configuration example of a pixel circuit that can be used for the pixel circuit 400 will be described.

[0437] The pixel circuit 400A shown in Fig. 25A includes a transistor 500A, a transistor 500B, and a capacitor 600. Fig. 25A also illustrates a light-emitting device 150 connected to the pixel circuit 400A. The pixel circuit 400A is electrically connected to a wiring SL, a wiring GL, a wiring ANO, and a wiring VCOM.

[0438] The transistor 500A has a gate electrically connected to a wiring GL, one of its source and drain electrically connected to a wiring SL, and the other electrically connected to the gate of the transistor 500B and one electrode of the capacitor 600. The transistor 500B has one of its source and drain electrically connected to a wiring ANO, and the other electrically connected to the anode of the light-emitting device 150. The capacitor 600 has the other electrode electrically connected to the anode of the light-emitting device 150. The light-emitting device 150 has a cathode electrically connected to a wiring VCOM.

[0439] 25B has a configuration in which a transistor 500C is added to the pixel circuit 400A. A wiring V0 is electrically connected to the pixel circuit 400B.

[0440] The pixel circuit 400C shown in FIG. 25C is an example in which the transistors 500A and 500B in the pixel circuit 400A are transistors whose gates and back gates are electrically connected. The pixel circuit 400D shown in FIG. 25D is an example in which the same transistors are used in the pixel circuit 400B. This can increase the current that the transistors can pass. Note that, although all the transistors in this example have a pair of gates electrically connected, this is not a limitation. Alternatively, a transistor having a pair of gates electrically connected to different wirings may be used. For example, reliability can be improved by using a transistor in which one of the gates is electrically connected to a source.

[0441] 26A has a configuration in which a transistor 500D is added to the pixel circuit 400B described above. The pixel circuit 400E is electrically connected to three wirings (a wiring GL1, a wiring GL2, and a wiring GL3) that function as gate lines.

[0442] The gate of the transistor 500D is electrically connected to a wiring GL3, one of the source and drain of the transistor 500D is electrically connected to the gate of the transistor 500B, and the other is electrically connected to a wiring V0. The gate of the transistor 500A is electrically connected to a wiring GL1, and the gate of the transistor 500C is electrically connected to a wiring GL2.

[0443] By simultaneously turning on the transistors 500C and 500D, the source and gate of the transistor 500B have the same potential, and the transistor 500B can be turned off. This forcibly cuts off the current flowing through the light-emitting device 150. Such a pixel circuit is suitable for use in a display method in which display periods and off periods are alternately provided.

[0444] 26B is an example in which a capacitor 600A is added to the pixel circuit 400E. The capacitor 600A functions as a storage capacitor.

[0445] 26C and 26D are examples in which transistors whose gates and back gates are electrically connected are applied to the pixel circuit 400E or 400F, respectively. Transistors whose gates and back gates are electrically connected are applied to transistors 500A, 500C, and 500D, and a transistor whose gate is electrically connected to its source is applied to transistor 500B.

[0446] <Plane Schematic View and Cross-Sectional Diagram of Light-Emitting Device> Figure 27A is a plan schematic view showing a configuration example in which a light-emitting device and a light-receiving device are arranged within one pixel in a display device 1000 according to one embodiment of the present invention. The display device 1000 includes a plurality of light-emitting devices 150R that emit red light, a plurality of light-emitting devices 150G that emit green light, a plurality of light-emitting devices 150B that emit blue light, and a plurality of light-receiving devices 160. In Figure 27A, to easily distinguish between the light-emitting devices 150, the symbols R, G, and B are assigned within the light-emitting region of each light-emitting device 150. Furthermore, the symbol PD is assigned within the light-receiving region of each light-receiving device 160.

[0447] The light-emitting devices 150R, 150G, 150B, and the light-receiving devices 160 are arranged in a matrix. Figure 27A shows an example in which the light-emitting devices 150R, 150G, and 150B are arranged in the X direction, and the light-receiving devices 160 are arranged below them. Figure 27A also shows an example of a configuration in which the light-emitting devices 150 emitting light of the same color are arranged in the Y direction intersecting the X direction. In the display device 1000 shown in Figure 27A, a pixel 180 can be configured by, for example, a sub-display pixel having the light-emitting device 150R, a sub-display pixel having the light-emitting device 150G, and a sub-display pixel having the light-emitting device 150B arranged in the X direction, and an imaging pixel having the light-receiving device 160 provided below these sub-display pixels.

[0448] For the light-emitting device 150R, the light-emitting device 150G, and the light-emitting device 150B, it is preferable to use an organic EL element such as an OLED (organic light-emitting diode) or a QLED (quantum-dot light-emitting diode). Examples of light-emitting materials that the organic EL elements have include fluorescent materials, phosphorescent materials, inorganic compounds (quantum dot materials, etc.), and materials that exhibit thermally activated delayed fluorescence (thermally activated delayed fluorescence (TADF) materials). Note that, as the TADF material, a material that is in thermal equilibrium between a singlet excited state and a triplet excited state may be used. Such TADF materials have a short emission lifetime (excitation lifetime), and therefore can suppress a decrease in efficiency in a high-brightness region of a light-emitting device.

[0449] For example, a pn-type or pin-type light-receiving device can be used as the light-receiving device 160. The light-receiving device 160 functions as a photoelectric conversion element that detects light incident on the light-receiving device 160 and generates electric charges. The amount of electric charges generated is determined based on the amount of incident light.

[0450] In particular, it is preferable to use an organic light-receiving device having a layer containing an organic compound as the light-receiving device 160. The organic light-receiving device can be easily made thin, lightweight, and large in area, and has a high degree of freedom in shape and design, and therefore can be applied to various display devices.

[0451] In an electronic device according to one embodiment of the present invention, an organic EL element is used as the light-emitting device 150, and an organic light-receiving device is used as the light-receiving device 160. The organic EL element and the organic light-receiving device can be formed on the same substrate. Therefore, the organic light-receiving device can be incorporated into a display device using the organic EL element. Note that the organic EL elements and the organic light-receiving device are preferably separated by photolithography. This allows the spacing between the light-emitting devices and the organic light-receiving devices to be narrowed, thereby realizing a display device with a higher aperture ratio than when a shadow mask such as a metal mask is used.

[0452] 27A shows a conductor 123 that functions as a common electrode and a conductor 121CM that functions as a connection electrode. Here, the conductor 121CM is electrically connected to the conductor 123. The conductor 121CM is provided outside the display section in which the light-emitting devices 150 and the light-receiving devices 160 are arranged. Also in FIG. 27A, the conductor 123 having an area that overlaps with the light-emitting devices 150, the light-receiving devices 160, and the conductor 121CM is shown by dashed lines.

[0453] The conductor 121CM can be provided along the outer periphery of the display unit. For example, it may be provided along one side of the outer periphery of the display unit, or it may be provided over two or more sides of the outer periphery of the display unit. That is, if the top surface of the display unit has a rectangular shape, the top surface of the conductor 121CM can have a strip-like, L-shaped, U-shaped (square bracket-shaped), or quadrangular shape.

[0454] Fig. 27B is a schematic plan view showing an example of the configuration of display device 1000, which is a modified example of display device 1000 shown in Fig. 27A. Display device 1000 shown in Fig. 27B differs from display device 1000 shown in Fig. 27A in that it includes light-emitting device 150IR that emits infrared light. Light-emitting device 150IR can emit, for example, near-infrared light (light with a wavelength of 750 nm or more and 1300 nm or less).

[0455] 27B , in addition to light-emitting devices 150R, 150G, and 150B, light-emitting device 150IR is arranged in the X direction, and light-receiving device 160 is arranged below light-emitting device 150IR. In addition, light-receiving device 160 has a function of detecting infrared light.

[0456] Fig. 28A is a cross-sectional view corresponding to dashed dotted line A1-A2 in Fig. 27A, and Fig. 28B is a cross-sectional view corresponding to dashed dotted line B1-B2 in Fig. 27A. Fig. 28C is a cross-sectional view corresponding to dashed dotted line C1-C2 in Fig. 27A, and Fig. 28D is a cross-sectional view corresponding to dashed dotted line D1-D2 in Fig. 27A. Light-emitting device 150R, light-emitting device 150G, light-emitting device 150B, and light-receiving device 160 are provided on insulator 111. Furthermore, when display device 1000 includes light-emitting device 150IR, light-emitting device 150IR is provided on insulator 111.

[0457] In this specification and the like, for example, when it is said that "B is on A" or "B is below A", it is not necessary that there is an area where A and B are in contact with each other.

[0458] Fig. 28A shows an example of the cross-sectional configuration of the light-emitting device 150R, the light-emitting device 150G, and the light-emitting device 150B in Fig. 27A. Also, Fig. 28B shows an example of the cross-sectional configuration of the light-receiving device 160 in Fig. 27A.

[0459] The light-emitting device 150R has a conductor 121R functioning as a pixel electrode, a hole injection layer 85R, a hole transport layer 86R, a light-emitting layer 87R, an electron transport layer 88R, a common layer 89, and a conductor 123. The light-emitting device 150G has a conductor 121G functioning as a pixel electrode, a hole injection layer 85G, a hole transport layer 86G, a light-emitting layer 87G, an electron transport layer 88G, a common layer 89, and a conductor 123. The light-emitting device 150B has a conductor 121B functioning as a pixel electrode, a hole injection layer 85B, a hole transport layer 86B, a light-emitting layer 87B, an electron transport layer 88B, a common layer 89, and a conductor 123. The light-receiving device 160 has a conductor 121PD functioning as a pixel electrode, a hole transport layer 86PD, a light-receiving layer 90, an electron transport layer 88PD, a common layer 89, and a conductor 123.

[0460] The conductor 121R, the conductor 121G, and the conductor 121B can be, for example, the conductor 121a, the conductor 121b, and the conductor 121c shown in FIGS. 21A to 22B.

[0461] The common layer 89 functions as an electron injection layer in the light-emitting device 150. On the other hand, the common layer 89 functions as an electron transport layer in the light-receiving device 160. Therefore, the light-receiving device 160 does not need to have the electron transport layer 88PD.

[0462] The hole injection layer 85R, the hole injection layer 85G, the hole injection layer 85B, the hole transport layer 86R, the hole transport layer 86G, the hole transport layer 86B, the electron transport layer 88R, the electron transport layer 88G, the electron transport layer 88B, and the common layer 89 can also be referred to as functional layers.

[0463] 28A , the pixel electrodes are provided separately for each element as conductors 121R, 121B, and 121G. The hole injection layers are provided separately for each element as hole injection layers 85R, 85G, and 85B. The hole transport layers are provided separately for each element as hole transport layers 86R, 86G, and 86B. The light-emitting layers are provided separately for each element as light-emitting layers 87R, 87G, and 87B. The electron transport layers are provided separately for each element as electron transport layers 88R, 88G, and 88B. The common layer 89 and the conductor 123 are provided in common to the light-emitting devices 150R, 150G, 150B, and 160.

[0464] 28A , the light-emitting device 150 and the light-receiving device 160 may have a hole-blocking layer and an electron-blocking layer. The light-emitting device 150 and the light-receiving device 160 may also have a layer containing a bipolar substance (a substance with high electron-transporting and hole-transporting properties).

[0465] The insulating layer 92 is provided so as to cover the end of the conductor 121R, the end of the conductor 121G, the end of the conductor 121B, and the end of the conductor 121PD. The end of the insulating layer 92 is preferably tapered. Note that the insulating layer 92 does not have to be provided if it is not necessary.

[0466] Note that, for example, the insulating layer 92 may be provided to prevent adjacent pixels (for example, the light-emitting device 150R and the light-emitting device 150G, the light-emitting device 150G and the light-emitting device 150B, etc.) from accidentally emitting light due to an unintentional electrical short circuit. Furthermore, when a light-emitting device is formed using a metal mask, the insulating layer 92 may be provided to cover the respective ends of the conductor 121R, the conductor 121G, the conductor 121B, and the conductor 121PD in order to prevent the metal mask from contacting the conductor 121R, the conductor 121G, the conductor 121B, and the conductor 121PD. As a result, the surface of insulating layer 92 becomes higher than the surfaces of conductors 121R, 121G, 121B, and conductor 121PD, eliminating contact between the metal mask and conductors 121R, 121G, 121B, and conductor 121PD, and preventing damage to the surfaces of conductors 121R, conductor 121G, conductor 121B, and conductor 121PD.

[0467] For example, the hole injection layer 85R, the hole injection layer 85G, the hole injection layer 85B, and the hole transport layer 86PD each have a region in contact with the upper surface of the conductor 121 and a region in contact with the surface of the insulating layer 92. Furthermore, the end of the hole injection layer 85R, the end of the hole injection layer 85G, the end of the hole injection layer 85B, and the end of the hole transport layer 86PD are located on the insulating layer 92.

[0468] Furthermore, a gap is provided between the common layer 89 and the insulating layer 92. This prevents the common layer 89 from coming into contact with the side surfaces of the light-emitting layer 87, the light-receiving layer 90, the hole transport layer 86, and the hole injection layer 85. This prevents short circuits in the light-emitting device 150 and the light-receiving device 160. The gap may be filled with an insulating layer containing an organic material that can be used for the insulator 162.

[0469] The voids are more easily formed, for example, as the distance between adjacent light-emitting layers 87 becomes shorter. For example, the voids can be suitably formed when the distance is 1 μm or less, preferably 500 nm or less, and more preferably 200 nm or less, 100 nm or less, 90 nm or less, 70 nm or less, 50 nm or less, 30 nm or less, 20 nm or less, 15 nm or less, or 10 nm or less.

[0470] In addition, a protective layer 91 is provided on the conductor 123. The protective layer 91 has a function of preventing impurities such as water from diffusing from above into each light-emitting device.

[0471] The protective layer 91 may have, for example, a single-layer structure or a multilayer structure including at least an inorganic insulating film. Examples of the inorganic insulating film include oxide films or nitride films such as a silicon oxide film, a silicon oxynitride film, a silicon nitride oxide film, a silicon nitride film, an aluminum oxide film, an aluminum oxynitride film, and a hafnium oxide film. Alternatively, the protective layer 91 may be made of a semiconductor material such as indium gallium oxide or indium gallium zinc oxide.

[0472] The protective layer 91 may also be a laminated film of an inorganic insulating film and an organic insulating film. For example, a configuration in which an organic insulating film is sandwiched between a pair of inorganic insulating films is preferable. Furthermore, it is preferable that the organic insulating film functions as a planarizing film. This allows the upper surface of the organic insulating film to be flat, improving the coverage of the inorganic insulating film thereon and enhancing the barrier properties. Furthermore, since the upper surface of the protective layer 91 is flat, when a structure (e.g., a color filter, a touch sensor electrode, or a lens array) is provided above the protective layer 91, the influence of uneven shapes caused by the structure below can be reduced, which is preferable.

[0473] 28A , light-emitting device 150R is provided with, from the bottom up, a conductor 121R, a hole injection layer 85R, a hole transport layer 86R, a light-emitting layer 87R, an electron transport layer 88R, a common layer 89 (electron injection layer), and a conductor 123. Light-emitting device 150G is provided with, from the bottom up, a conductor 121G, a hole injection layer 85G, a hole transport layer 86G, a light-emitting layer 87G, an electron transport layer 88G, a common layer 89 (electron injection layer), and a conductor 123. Light-emitting device 150B is provided with, from the bottom up, a conductor 121G, a hole injection layer 85G, a hole transport layer 86G, a light-emitting layer 87G, an electron transport layer 88G, a common layer 89 (electron injection layer), and a conductor 123. 28B illustrates a configuration in which, from bottom to top, the light-receiving device 160 includes the conductor 121PD, the hole-transport layer 86PD, the light-receiving layer 90, the electron-transport layer 88PD, the common layer 89, and the conductor 123. However, the configuration of the light-emitting device or the light-receiving device according to one embodiment of the present invention is not limited to this. For example, the light-emitting device 150 may include, from bottom to top, a conductor functioning as a pixel electrode, an electron-injection layer, an electron-transport layer, a light-emitting layer, a hole-transport layer, a hole-injection layer, and a conductor functioning as a common electrode. The light-receiving device 160 may include, from bottom to top, a conductor functioning as a pixel electrode, an electron-transport layer, a light-receiving layer, a hole-transport layer, and a conductor functioning as a common electrode. In this case, the hole injection layer of the light-emitting device 150 can be a common layer, and the common layer can be provided between the hole transport layer and the common electrode of the light-receiving device 160. Furthermore, in the light-emitting device 150, the electron injection layer can be separated for each element.

[0474] 27A and 27B , various arrangements of the sub-display pixels can be applied. Examples of the arrangement of the sub-display pixels include a stripe arrangement, an S-stripe arrangement, a matrix arrangement, a delta arrangement, a Bayer arrangement, and a pentile arrangement.

[0475] Examples of the top surface shape of the sub-display pixel include polygons such as triangles, quadrilaterals (e.g., rectangles or squares), and pentagons. Examples of the top surface shape of the sub-display pixel include the above-mentioned polygons with rounded corners, ellipses, and circles. Here, the top surface shape of the sub-display pixel corresponds to the top surface shape of the light-emitting region of the light-emitting device.

[0476] A stripe arrangement is applied to the pixel 180 shown in Fig. 29A. The pixel 180 shown in Fig. 29A is composed of three sub-display pixels: a sub-display pixel 180a, a sub-display pixel 180b, and a sub-display pixel 180c. For example, as shown in Fig. 30A, the sub-display pixel 180a may be a red sub-display pixel R, the sub-display pixel 180b may be a green sub-display pixel G, and the sub-display pixel 180c may be a blue sub-display pixel B.

[0477] An S-stripe arrangement is applied to the pixel 180 shown in Fig. 29B. The pixel 180 shown in Fig. 29B is composed of three sub-display pixels: a sub-display pixel 180a, a sub-display pixel 180b, and a sub-display pixel 180c. For example, as shown in Fig. 30B, the sub-display pixel 180a may be a blue sub-display pixel B, the sub-display pixel 180b may be a red sub-display pixel R, and the sub-display pixel 180c may be a green sub-display pixel G.

[0478] 29C shows an example in which sub-display pixels of each color are arranged in a zigzag pattern. Specifically, in a plan view, the positions of the upper sides of two sub-display pixels arranged in the column direction (e.g., sub-display pixel 180a and sub-display pixel 180b, or sub-display pixel 180b and sub-display pixel 180c) are misaligned. For example, as shown in FIG. 30C , the sub-display pixel 180a may be a red sub-display pixel R, the sub-display pixel 180b may be a green sub-display pixel G, and the sub-display pixel 180c may be a blue sub-display pixel B.

[0479] The pixel 180 shown in FIG. 29D includes a sub-display pixel 180a having a substantially trapezoidal top surface shape with rounded corners, a sub-display pixel 180b having a substantially triangular top surface shape with rounded corners, and a sub-display pixel 180c having a substantially rectangular or hexagonal top surface shape with rounded corners. Furthermore, the sub-display pixel 180a has a larger light-emitting area than the sub-display pixel 180b. In this manner, the shape and size of each sub-display pixel can be determined independently. For example, the sub-display pixel having a more reliable light-emitting device can be made smaller in size. For example, as shown in FIG. 30D, the sub-display pixel 180a may be a green sub-display pixel G, the sub-display pixel 180b may be a red sub-display pixel R, and the sub-display pixel 180c may be a blue sub-display pixel B.

[0480] The pixels 170A and 170B shown in Fig. 29E are arranged in a Pentile array. Fig. 29E shows an example in which a pixel 170A having a sub-display pixel 180a and a sub-display pixel 180b and a pixel 170B having a sub-display pixel 180b and a sub-display pixel 180c are arranged alternately. For example, as shown in Fig. 30E, the sub-display pixel 180a may be a red sub-display pixel R, the sub-display pixel 180b may be a green sub-display pixel G, and the sub-display pixel 180c may be a blue sub-display pixel B.

[0481] 29F and 29G are arranged in a delta configuration. The pixel 170A has two sub-display pixels (sub-display pixel 180a and sub-display pixel 180b) in the top row (first row) and one sub-display pixel (sub-display pixel 180c) in the bottom row (second row). The pixel 170B has one sub-display pixel (sub-display pixel 180c) in the top row (first row) and two sub-display pixels (sub-display pixel 180a and sub-display pixel 180b) in the bottom row (second row). For example, as shown in FIG. 30F , the sub-display pixel 180a may be a red sub-display pixel R, the sub-display pixel 180b may be a green sub-display pixel G, and the sub-display pixel 180c may be a blue sub-display pixel B.

[0482] FIG. 29F shows an example in which each sub-display pixel has a substantially rectangular shape with rounded corners on the top surface, and FIG. 29G shows an example in which each sub-display pixel has a circular shape on the top surface.

[0483] In the pixel layouts shown in Figures 29A to 29G, the sub-display pixels 180a, 180b, and 180c have been described above as display pixels, but one or more sub-display pixels selected from the sub-display pixels 180a, 180b, and 180c may instead be imaging pixels.

[0484] In photolithography, the finer the pattern to be processed, the more significant the effect of light diffraction becomes. This reduces the fidelity of the photomask pattern when it is transferred by exposure, making it difficult to process the resist mask into the desired shape. Therefore, even if the photomask pattern is rectangular, it is likely to have rounded corners. As a result, the top surface shape of the sub-display pixel may become a polygon with rounded corners, an ellipse, or a circle.

[0485] Furthermore, in a manufacturing method of a display device according to one embodiment of the present invention, the EL layer is processed into an island shape using a resist mask. The resist film formed on the EL layer needs to be cured at a temperature lower than the heat resistance temperature of the EL layer. Therefore, depending on the heat resistance temperature of the material for the EL layer and the curing temperature of the resist material, the resist film may not be cured sufficiently. A resist film that is not cured sufficiently may have a shape that deviates from the desired shape during processing. As a result, the top surface shape of the EL layer may become a polygon with rounded corners, an ellipse, or a circle. For example, when a resist mask with a square top surface shape is formed, a resist mask with a circular top surface shape may be formed, resulting in a circular top surface shape of the EL layer.

[0486] In order to form the top surface of the EL layer into a desired shape, a technique for correcting a mask pattern in advance (OPC (Optical Proximity Correction) technique) may be used so that the design pattern and the transfer pattern coincide with each other. Specifically, the OPC technique adds a correction pattern to the corners of figures on the mask pattern.

[0487] The pixel 180 shown in FIGS. 31A to 31C is configured in a stripe arrangement.

[0488] Figure 31A shows an example in which each sub-display pixel has a rectangular top surface shape, Figure 31B shows an example in which each sub-display pixel has a top surface shape that is a combination of two semicircles and a rectangle, and Figure 31C shows an example in which each sub-display pixel has an elliptical top surface shape.

[0489] The pixels 180 shown in FIGS. 31D to 31F are arranged in a matrix.

[0490] Figure 31D shows an example in which each sub-display pixel has a square top surface shape, Figure 31E shows an example in which each sub-display pixel has an approximately square top surface shape with rounded corners, and Figure 31F shows an example in which each sub-display pixel has a circular top surface shape.

[0491] The pixel 180 shown in Figures 31A to 31F is composed of four sub-display pixels: sub-display pixel 180a, sub-display pixel 180b, sub-display pixel 180c, and sub-display pixel 180d. The sub-display pixels 180a, sub-display pixel 180b, sub-display pixel 180c, and sub-display pixel 180d each emit light of a different color. For example, as shown in Figures 32A and 32B, the sub-display pixels 180a, sub-display pixel 180b, sub-display pixel 180c, and sub-display pixel 180d can be red, green, blue, and white sub-display pixels, respectively. Alternatively, the sub-display pixels 180a, sub-display pixel 180b, sub-display pixel 180c, and sub-display pixel 180d can be red, green, blue, and infrared emitting sub-display pixels, respectively.

[0492] The sub-pixel 180d includes a light-emitting device. For example, the light-emitting device includes a pixel electrode, an EL layer, and a conductor 121CM that functions as a common electrode. Note that the pixel electrode may be made of the same material as the conductors 121a, 121b, 121c, 122a, 122b, and 122c. The EL layer may be made of the same material as the EL layer 141a, 141b, or 141c, for example.

[0493] FIG. 31G shows an example in which one pixel 180 is configured with two rows and three columns. The pixel 180 has three sub-display pixels (sub-display pixel 180a, sub-display pixel 180b, and sub-display pixel 180c) in the top row (first row) and three sub-display pixels 180d in the bottom row (second row). In other words, the pixel 180 has the sub-display pixel 180a and the sub-display pixel 180d in the left column (first column), the sub-display pixel 180b and the sub-display pixel 180d in the center column (second column), and the sub-display pixel 180c and the sub-display pixel 180d in the right column (third column). As shown in FIG. 31G, by aligning the sub-display pixels in the top row and the bottom row, it is possible to efficiently remove dust and other particles that may occur during the manufacturing process. Therefore, a display device with high display quality can be provided.

[0494] 31H shows an example in which one pixel 180 is configured with two rows and three columns. The pixel 180 has three sub-display pixels (sub-display pixel 180a, sub-display pixel 180b, and sub-display pixel 180c) in the top row (first row) and one sub-display pixel (sub-display pixel 180d) in the bottom row (second row). In other words, the pixel 180 has the sub-display pixel 180a in the left column (first column), the sub-display pixel 180b in the center column (second column), the sub-display pixel 180c in the right column (third column), and further has the sub-display pixel 180d across these three columns.

[0495] In addition, in the pixel 180 shown in Figures 31G and 31H, for example, as shown in Figures 32C and 32D, the sub-display pixel 180a can be a red sub-display pixel R, the sub-display pixel 180b can be a green sub-display pixel G, the sub-display pixel 180c can be a blue sub-display pixel B, and the sub-display pixel 180d can be a white sub-display pixel W.

[0496] The display device according to one embodiment of the present invention may include a light-receiving device in a pixel.

[0497] 31G has four sub-pixels, three of which may have light-emitting devices and the remaining one may have a light-receiving device. For example, in the first embodiment, the three light-emitting devices of the pixel 180 may be applied to the circuits PX_R, PX_G, and PX_B in FIG. 5C, and the light-receiving device included in the pixel 180 may be applied to the circuit PV.

[0498] The light receiving device may be, for example, a pn-type or pin-type light receiving device. The light receiving device functions as a photoelectric conversion device (also called a photoelectric conversion element) that detects light incident on the light receiving device and generates electric charges. The amount of electric charges generated by the light receiving device is determined based on the amount of light incident on the light receiving device.

[0499] In particular, it is preferable to use an organic light-receiving device having a layer containing an organic compound as the light-receiving device. The organic light-receiving device can be easily made thin, lightweight, and large in area, and has a high degree of freedom in shape and design, so it can be applied to various display devices.

[0500] In one embodiment of the present invention, an organic EL device is used as the light-emitting device, and an organic light-receiving device is used as the light-receiving device. The organic EL device and the organic light-receiving device can be formed on the same substrate. Therefore, the organic light-receiving device can be built into a display device using the organic EL device.

[0501] The light-receiving device has an active layer that functions as at least a photoelectric conversion layer between a pair of electrodes. In this specification and the like, one of the pair of electrodes may be referred to as a pixel electrode and the other as a common electrode.

[0502] For example, the sub-display pixels 180a, 180b, and 180c may be sub-display pixels of three colors, R, G, and B, and the sub-display pixel 180d may be an imaging pixel having a light-receiving device. In this case, the fourth layer has at least an active layer.

[0503] Of the pair of electrodes that a light-receiving device has, one electrode functions as an anode and the other electrode functions as a cathode. The following describes an example in which the pixel electrode functions as the anode and the common electrode functions as the cathode. The light-receiving device can detect light incident on the light-receiving device, generate electric charges, and extract them as a current by applying a reverse bias between the pixel electrode and the common electrode. Alternatively, the pixel electrode may function as a cathode and the common electrode may function as an anode.

[0504] The same manufacturing method as for the light-emitting device can be applied to the light-receiving device. The island-shaped active layer (also called a photoelectric conversion layer) of the light-receiving device is not formed by a metal mask pattern, but is formed by forming a film that will become the active layer on the entire surface and then processing it, so that the island-shaped active layer can be formed with a uniform thickness. Furthermore, by providing a mask layer on the active layer, damage to the active layer during the manufacturing process of the display device can be reduced, and the reliability of the light-receiving device can be improved.

[0505] Here, a layer shared by a light-receiving device and a light-emitting device may have different functions in the light-emitting device and in the light-receiving device. In this specification, components may be referred to based on their functions in the light-emitting device. For example, a hole injection layer functions as a hole injection layer in the light-emitting device and as a hole transport layer in the light-receiving device. Similarly, an electron injection layer functions as an electron injection layer in the light-emitting device and as an electron transport layer in the light-receiving device. Furthermore, a layer shared by a light-receiving device and a light-emitting device may have the same function in the light-emitting device and in the light-receiving device. A hole transport layer functions as a hole transport layer in both the light-emitting device and the light-receiving device, and an electron transport layer functions as an electron transport layer in both the light-emitting device and the light-receiving device.

[0506] The active layer of the light-receiving device includes a semiconductor. Examples of the semiconductor include inorganic semiconductors such as silicon and organic semiconductors containing organic compounds. In this embodiment, an example in which an organic semiconductor is used as the semiconductor of the active layer is shown. Using an organic semiconductor is preferable because the light-emitting layer and the active layer can be formed by the same method (e.g., vacuum deposition), allowing the use of a common manufacturing device.

[0507] The n-type semiconductor material of the active layer is fullerene (e.g., C ６０ , C ７０ Examples of electron-accepting organic semiconductor materials include fullerene derivatives and fullerenes. Fullerenes have a soccer ball-like shape, which is energetically stable. Fullerenes have deep (low) HOMO (highest occupied molecular orbital) and LUMO (lowest unoccupied molecular orbital) levels. Because fullerenes have a deep LUMO level, they have extremely high electron-accepting (acceptor) properties. Normally, when π-electron conjugation (resonance) spreads on a plane, as in benzene, electron-donating (donor) properties increase, but fullerenes have a spherical shape, so they have high electron-accepting properties despite the wide spread π-electron conjugation. High electron-accepting properties allow charge separation to occur quickly and efficiently, making them useful as light-receiving devices. C ６０ , C ７０ Both have a wide absorption band in the visible light region, and C ７０ is C ６０ Other fullerene derivatives include [6,6]-Phenyl-C71-butylic acid methyl ester (abbreviation: PC70BM), [6,6]-Phenyl-C61-butylic acid methyl ester (abbreviation: PC60BM), and 1',1",4',4"-Tetrahydro-di[1,4]methanenaphthaleno[1,2:2',3',56,60:2",3"][5,6]fullerene-C60 (abbreviation: ICBA).

[0508] Furthermore, examples of n-type semiconductor materials include metal complexes having a quinoline skeleton, metal complexes having a benzoquinoline skeleton, metal complexes having an oxazole skeleton, metal complexes having a thiazole skeleton, oxadiazole derivatives, triazole derivatives, imidazole derivatives, oxazole derivatives, thiazole derivatives, phenanthroline derivatives, quinoline derivatives, benzoquinoline derivatives, quinoxaline derivatives, dibenzoquinoxaline derivatives, pyridine derivatives, bipyridine derivatives, pyrimidine derivatives, naphthalene derivatives, anthracene derivatives, coumarin derivatives, rhodamine derivatives, triazine derivatives, and quinone derivatives.

[0509] Examples of the p-type semiconductor material contained in the active layer include electron-donating organic semiconductor materials such as copper(II) phthalocyanine (CuPc), tetraphenyldibenzoperiflanethene (DBP), zinc phthalocyanine (ZnPc), tin phthalocyanine (SnPc), and quinacridone.

[0510] Examples of p-type semiconductor materials include carbazole derivatives, thiophene derivatives, furan derivatives, and compounds having an aromatic amine skeleton. Examples of p-type semiconductor materials include naphthalene derivatives, anthracene derivatives, pyrene derivatives, triphenylene derivatives, fluorene derivatives, pyrrole derivatives, benzofuran derivatives, benzothiophene derivatives, indole derivatives, dibenzofuran derivatives, dibenzothiophene derivatives, indolocarbazole derivatives, porphyrin derivatives, phthalocyanine derivatives, naphthalocyanine derivatives, quinacridone derivatives, polyphenylenevinylene derivatives, polyparaphenylene derivatives, polyfluorene derivatives, polyvinylcarbazole derivatives, and polythiophene derivatives.

[0511] The HOMO level of the electron-donating organic semiconductor material is preferably shallower (higher) than the HOMO level of the electron-accepting organic semiconductor material, and the LUMO level of the electron-donating organic semiconductor material is preferably shallower (higher) than the LUMO level of the electron-accepting organic semiconductor material.

[0512] It is preferable to use a spherical fullerene as the electron-accepting organic semiconductor material and a planar organic semiconductor material as the electron-donating organic semiconductor material. Molecules with similar shapes tend to aggregate together, and when molecules of the same type aggregate, the energy levels of their molecular orbitals become close, which can improve carrier transport properties.

[0513] For example, the active layer is preferably formed by co-evaporating an n-type semiconductor and a p-type semiconductor, or may be formed by laminating an n-type semiconductor and a p-type semiconductor.

[0514] The light-receiving device may further include, as a layer other than the active layer, a layer containing a substance with high hole-transporting properties, a substance with high electron-transporting properties, a bipolar substance (a substance with high electron-transporting properties and high hole-transporting properties), etc. Furthermore, without being limited to the above, the light-receiving device may further include a layer containing one or more materials selected from a substance with high hole-injecting properties, a hole-blocking material, a material with high electron-injecting properties, and an electron-blocking material.

[0515] The light-receiving device may be made of either a low-molecular-weight compound or a high-molecular-weight compound, and may contain an inorganic compound. The layers constituting the light-receiving device may be formed by a method such as a vapor deposition method (including a vacuum vapor deposition method), a transfer method, a printing method, an inkjet method, or a coating method.

[0516] For example, the hole transport material may be a polymer compound such as poly(3,4-ethylenedioxythiophene) / poly(styrenesulfonic acid) (PEDOT / PSS), or an inorganic compound such as molybdenum oxide or copper iodide (CuI), while the electron transport material may be an inorganic compound such as zinc oxide (ZnO).

[0517] Furthermore, a polymer compound such as Poly[[4,8-bis[5-(2-ethylhexyl)-2-thienyl]benzo[1,2-b:4,5-b']dithiophene-2,6-diyl]-2,5-thiophenediyl[5,7-bis(2-ethylhexyl)-4,8-dioxo-4H,8H-benzo[1,2-c:4,5-c']dithiophene-1,3-diyl]] polymer (abbreviated as PBDB-T) or a PBDB-T derivative, which functions as a donor, can be used in the active layer. For example, a method can be used in which an acceptor material is dispersed in PBDB-T or a PBDB-T derivative.

[0518] The active layer may also contain a mixture of three or more materials. For example, in order to expand the wavelength range, a third material may be mixed in addition to an n-type semiconductor material and a p-type semiconductor material. In this case, the third material may be a low-molecular-weight compound or a high-molecular-weight compound.

[0519] In a display device having a light-emitting device and a light-receiving device in each pixel, the pixel has a light-receiving function, so that it is possible to detect contact or proximity of an object while displaying an image. For example, in addition to displaying an image using all of the sub-display pixels of the display device, some of the sub-display pixels can emit light as a light source and the remaining sub-display pixels can display an image.

[0520] A display device according to one embodiment of the present invention has a display portion in which light-emitting devices are arranged in a matrix, and can display an image on the display portion. Furthermore, light-receiving devices are arranged in a matrix on the display portion, and the display portion has an imaging function and / or a sensing function in addition to an image display function. The display portion can be used as an image sensor or a touch sensor. That is, by detecting light in the display portion, an image can be captured or the proximity or contact of an object (such as a finger, a hand, or a pen) can be detected. Furthermore, the display device according to one embodiment of the present invention can use a light-emitting device as a light source for a sensor. Therefore, a light-receiving portion and a light source are not required separately from the display device, and the number of components in an electronic device can be reduced.

[0521] In a display device of one embodiment of the present invention, when light emitted from a light-emitting device included in a display portion is reflected (or scattered) by an object, the light-receiving device can detect the reflected light (or scattered light). Therefore, imaging or touch detection is possible even in a dark place.

[0522] When the light receiving device is used as an image sensor, the display device can capture an image using the light receiving device. For example, the display device of the present embodiment can be used as a scanner.

[0523] For example, an image sensor can be used to acquire data related to biometric information such as fingerprints and palm prints. That is, a biometric authentication sensor can be built into the display device. By building a biometric authentication sensor into the display device, the number of components in the electronic device can be reduced compared to when a biometric authentication sensor is provided separately from the display device, and the electronic device can be made smaller and lighter.

[0524] Furthermore, when the light-receiving device is used as a touch sensor, the display device can detect the proximity or contact of an object using the light-receiving device.

[0525] The pixels shown in FIGS. 33A to 33D include a sub-display pixel G, a sub-display pixel B, a sub-display pixel R, and an imaging pixel PS.

[0526] A stripe arrangement is applied to the pixels shown in Fig. 33A, and a matrix arrangement is applied to the pixels shown in Fig. 33B.

[0527] 33C and 33D show an example in which one pixel is arranged across two rows and three columns. The top row (first row) has three sub-display pixels (sub-display pixel G, sub-display pixel B, and sub-display pixel R). In FIG. 33C, the bottom row (second row) has three imaging pixels PS. Meanwhile, in FIG. 33D, the bottom row (second row) has two imaging pixels PS. By aligning the arrangement of the pixels in the top row and bottom row as shown in FIG. 33C, it is possible to efficiently remove dust and other impurities that may occur during the manufacturing process. Therefore, a display device with high display quality can be provided. The layout of each pixel is not limited to the configurations shown in FIGS. 33A to 33D.

[0528] Each of the sub-display pixels R, G, and B has a light-emitting device that emits white light. In the sub-display pixels R, G, and B, a corresponding colored layer is provided so as to overlap the light-emitting device.

[0529] The imaging pixels PS each have a light receiving device. The wavelength of light detected by the imaging pixels PS is not particularly limited.

[0530] The light receiving device of the imaging pixel PS preferably detects visible light, and preferably detects one or more colors selected from blue, purple, blue-purple, green, yellow-green, yellow, orange, and red. The light receiving device of the imaging pixel PS may also detect infrared light.

[0531] The display device 1000 shown in FIG. 33E has, between a substrate 351 and a substrate 359, a layer 353 having a light-receiving device, a functional layer 355, and a layer 357 having a light-emitting device.

[0532] The functional layer 355 has a circuit for driving the light-receiving device and a circuit for driving the light-emitting device. The functional layer 355 may be provided with, for example, one or more elements selected from a switch, a transistor, a capacitor, a resistor, a wiring, and a terminal. Note that, when the light-emitting device and the light-receiving device are driven by a passive matrix method, a configuration without a switch and a transistor may be used.

[0533] 33E , light emitted from a light-emitting device in layer 357 having a light-emitting device is reflected by a person's eye and its surroundings, and the reflected light is detected by a light-receiving device in layer 353 having a light-receiving device. This makes it possible to detect information about the surroundings, surface, or inside of a person's eye (for example, the number of blinks, eyeball movement, or eyelid movement).

[0534] The insulators, conductors, semiconductors, and the like disclosed in this specification can be formed by a PVD (Physical Vapor Deposition) method or a CVD method. Examples of PVD methods include sputtering, resistance heating evaporation, electron beam evaporation, and PLD. Examples of CVD methods include plasma CVD and thermal CVD. In particular, examples of thermal CVD methods include MOCVD (Metal Organic Chemical Vapor Deposition) and ALD.

[0535] The thermal CVD method is a film formation method that does not use plasma, and therefore has the advantage that defects caused by plasma damage are not generated.

[0536] In the thermal CVD method, a source gas and an oxidizing agent are simultaneously fed into a chamber, the chamber is kept at atmospheric pressure or reduced pressure, and the reaction occurs near or on a substrate, resulting in deposition on the substrate, thereby forming a film.

[0537] Alternatively, the ALD method may be used to deposit a film by sequentially introducing source gases for reaction into a chamber under atmospheric or reduced pressure and repeating this gas introduction sequence. For example, two or more source gases are sequentially supplied to the chamber by switching between switching valves (also called high-speed valves). An inert gas (e.g., argon or nitrogen) is introduced simultaneously with or after the first source gas to prevent mixing of the multiple source gases, followed by the introduction of the second source gas. When an inert gas is introduced simultaneously, the inert gas acts as a carrier gas, and may also be introduced simultaneously with the introduction of the second source gas. Alternatively, instead of introducing an inert gas, the first source gas may be evacuated by vacuum evacuation before the introduction of the second source gas. The first source gas adsorbs on the substrate surface to form a first thin layer, which then reacts with the second source gas introduced later, resulting in the second thin layer being deposited on the first thin layer to form a thin film. Repeating this gas introduction sequence multiple times while controlling the gas introduction sequence until the desired thickness is achieved allows the formation of a thin film with excellent step coverage. The thickness of the thin film can be adjusted by changing the number of times the gas introduction sequence is repeated, allowing for precise film thickness adjustment, making this method suitable for fabricating fine FETs.

[0538] Thermal CVD methods such as MOCVD and ALD can form various films such as metal films, semiconductor films, and inorganic insulating films disclosed in the embodiments described above. For example, when forming an In—Ga—Zn—O film, trimethylindium (In(CH ３ ) ３ ), trimethylgallium (Ga(CH ３ ) ３ ), and dimethylzinc (Zn(CH ３ ) ２ In addition, the combination is not limited to these, and trimethylgallium may be replaced with triethylgallium (Ga(C ２ H ５ ) ３ ) can also be used, and diethyl zinc (Zn(C) ２ H ５ ) ２ ) can also be used.

[0539] For example, when a hafnium oxide film is formed using a film forming apparatus that uses the ALD method, a solvent and a liquid containing a hafnium precursor compound (e.g., hafnium alkoxide, tetrakisdimethylamidohafnium (TDMAH), Hf[N(CH ３ ) ２ ] ４ The raw material gas is a vaporized hafnium amide (such as ozone) as an oxidizer. ３ ) Two types of gases are used. Other materials include tetrakis(ethylmethylamido)hafnium.

[0540] For example, when an aluminum oxide film is formed using a film forming apparatus that uses the ALD method, a liquid containing a solvent and an aluminum precursor compound (e.g., trimethylaluminum (TMA), Al(CH ３ ) ３ )) as a raw material gas, and H as an oxidant. ２ Two types of gases are used: O. Other materials include tris(dimethylamido)aluminum, triisobutylaluminum, and aluminum tris(2,2,6,6-tetramethyl-3,5-heptanedionate).

[0541] For example, when a silicon oxide film is formed using a film forming apparatus that uses the ALD method, hexachlorodisilane is adsorbed on the surface to be formed, and an oxidizing gas (e.g., O ２ , or nitrous oxide) radicals are supplied to react with the adsorbate.

[0542] For example, when a tungsten film is formed using a film forming apparatus that uses the ALD method, WF ６ Gas and B ２ H ６ The gases are introduced repeatedly in sequence to form an initial tungsten film, and then WF ６ Gas and H ２ The gases are introduced repeatedly in sequence to form a tungsten film. ２ H ６ Instead of gas, SiH ４ A gas may also be used.

[0543] For example, when an In—Ga—Zn—O film is formed as an oxide semiconductor film by a film formation apparatus using the ALD method, a precursor (generally, it may be called, for example, a precursor or a metal precursor) and an oxidizing agent (generally, it may be called, for example, a reactant or a non-metal precursor) are sequentially and repeatedly introduced to form the oxide semiconductor film. Specifically, for example, a precursor, In(CH ３ ) ３ gas and oxidizer O ３ The gas is introduced to form an In—O layer, and then the precursor Ga(CH ３ ) ３ gas and oxidizer O ３ The gas is introduced to form a GaO layer, and then the precursor Zn(CH ３ ) ２ gas and oxidizer O ３ The gas is introduced to form a ZnO layer. Note that the order of these layers is not limited to this example. Also, mixed oxide layers such as an In—Ga—O layer, an In—Zn—O layer, or a Ga—Zn—O layer may be formed using these gases. ３ Instead of gas, H obtained by bubbling water with an inert gas such as Ar ２ O gas may be used, but O gas containing no H ３ It is preferable to use In(CH ３ ) ３ Instead of gas, In(C ２ H ５ ) ３ Gas may also be used. ３ ) ３ Instead of gas, Ga(C ２ H ５ ) ３ Gas may also be used. ３ ) ２ Instead of gas, Zn(C ２ H ５ ) 2 gases may also be used.

[0544] The screen ratio (aspect ratio) of the display unit included in the electronic device of one embodiment of the present invention is not particularly limited. For example, the display unit can support various screen ratios such as 1:1 (square), 4:3, 16:9, and 16:10.

[0545] The shape of the display unit included in the electronic device of one embodiment of the present invention is not particularly limited. For example, the display unit can have various shapes such as a rectangular shape, a polygonal shape (e.g., an octagonal shape), a circular shape, and an elliptical shape.

[0546] Note that this embodiment mode can be appropriately combined with other embodiment modes described in this specification.

[0547] Embodiment 4 In this embodiment, a display module that can be applied to an electronic device of one embodiment of the present invention will be described.

[0548] <Configuration Example of Display Module> First, a display module including a display device that can be applied to an electronic device of one embodiment of the present invention will be described.

[0549] 34A shows a perspective view of a display module 1280. The display module 1280 includes the display device 1000 and an FPC 1290.

[0550] The display module 1280 includes a substrate 1291 and a substrate 1292. The display module 1280 includes a display portion 1281. The display portion 1281 is a region for displaying an image in the display module 1280, and is a region where light from each pixel provided in a pixel portion 1284 described later can be viewed.

[0551] 34B is a perspective view schematically showing the configuration on the substrate 1291 side. A circuit portion 1282, a pixel circuit portion 1283 on the circuit portion 1282, and a pixel portion 1284 on the pixel circuit portion 1283 are stacked on the substrate 1291. A terminal portion 1285 for connecting to the FPC 1290 is provided in a portion of the substrate 1291 that does not overlap with the pixel portion 1284. The terminal portion 1285 and the circuit portion 1282 are electrically connected by a wiring portion 1286 composed of a plurality of wirings.

[0552] The pixel section 1284 and the pixel circuit section 1283 correspond to, for example, the pixel layer PXAL described above, and the circuit section 1282 corresponds to, for example, the circuit layer SICL described above.

[0553] The pixel section 1284 has a plurality of periodically arranged pixels 1284a. An enlarged view of one pixel 1284a is shown on the right side of FIG. 34B . The pixel 1284a has a light-emitting device 1430a, a light-emitting device 1430b, and a light-emitting device 1430c, which emit light of different colors. Note that the light-emitting devices 1430a, 1430b, and 1430c correspond to the light-emitting devices 150a, 150b, and 150c described above, for example. The plurality of light-emitting devices described above may be arranged in a stripe array as shown in FIG. 34B . Various arrangement methods, such as a delta array or a pentile array, may also be applied.

[0554] The pixel circuit section 1283 has a plurality of pixel circuits 1283a arranged periodically.

[0555] One pixel circuit 1283a is a circuit that controls the light emission of three light-emitting devices included in one pixel 1284a. One pixel circuit 1283a may be configured to have three circuits that control the light emission of one light-emitting device. For example, the pixel circuit 1283a may be configured to have one or more selected from one selection transistor, one current control transistor (drive transistor), and a capacitor for each light-emitting device. In this case, a gate signal is input to the gate of the selection transistor, and a source signal is input to either the source or the drain. This realizes an active matrix display device.

[0556] The circuit portion 1282 includes a circuit for driving each pixel circuit 1283a of the pixel circuit portion 1283. For example, it is preferable that the circuit portion 1282 includes one or both of a gate line driver circuit and a source line driver circuit. In addition, the circuit portion 1282 may include one or more selected from an arithmetic circuit, a memory circuit, and a power supply circuit.

[0557] The FPC 1290 functions as a wiring for supplying a video signal or a power supply potential from the outside to the circuit portion 1282. An IC may be mounted on the FPC 1290.

[0558] The display module 1280 can have a configuration in which one or both of the pixel circuit portion 1283 and the circuit portion 1282 are stacked below the pixel portion 1284, thereby enabling the aperture ratio (effective display area ratio) of the display portion 1281 to be extremely high. For example, the aperture ratio of the display portion 1281 can be 40% or more and less than 100%, preferably 50% or more and 95% or less, and more preferably 60% or more and 95% or less. Furthermore, the pixels 1284a can be arranged at extremely high density, enabling the resolution of the display portion 1281 to be extremely high. For example, it is preferable that the pixels 1284a be arranged in the display portion 1281 at a resolution of 2000 ppi or more, preferably 3000 ppi or more, more preferably 5000 ppi or more, and further preferably 6000 ppi or more, and 20000 ppi or less, or 30000 ppi or less.

[0559] Such a display module 1280 has extremely high resolution and can therefore be suitably used in VR devices such as head-mounted displays or eyeglass-type AR devices. For example, even in a configuration in which the display unit of the display module 1280 is viewed through lenses, the display module 1280 has an extremely high-resolution display unit 1281, so that even when the display unit is enlarged with lenses, the pixels are not visible, allowing for a highly immersive display. Furthermore, the display module 1280 is not limited to this, and can be suitably used in electronic devices having relatively small display units. For example, it can be suitably used in the display unit of a wearable electronic device such as a wristwatch.

[0560] Note that this embodiment mode can be appropriately combined with other embodiment modes described in this specification.

[0561] Embodiment 5 In this embodiment, an example of an electronic device to which a display device is applied will be described as an example of an electronic device according to one embodiment of the present invention.

[0562] 35A and 35B show the appearance of an electronic device 8300 that is a head-mounted display.

[0563] The electronic device 8300 includes a housing 8301 , a display portion 8302 , operation buttons 8303 , and a band-shaped fixture 8304 .

[0564] The operation button 8303 has a function of a power button, etc. The electronic device 8300 may have a button in addition to the operation button 8303.

[0565] 35C , a lens 8305 may be provided between the display portion 8302 and the user's eyes. The lens 8305 allows the user to enlarge the display portion 8302, thereby enhancing the sense of realism. In this case, as shown in FIG. 35C , a dial 8306 may be provided to change the position of the lens for adjusting the diopter.

[0566] For example, a display device with extremely high definition is preferably used for the display portion 8302. By using a display device with high definition for the display portion 8302, even if an image is enlarged using a lens 8305 as in Fig. 35C , pixels are not visible to the user, and a more realistic image can be displayed.

[0567] 35A to 35C show an example in which one display unit 8302 is included. With such a configuration, the number of parts can be reduced.

[0568] The display portion 8302 can display two images, an image for the right eye and an image for the left eye, side by side in two regions, left and right, respectively, thereby displaying a stereoscopic image using binocular parallax.

[0569] Alternatively, a single image that can be viewed by both eyes may be displayed across the entire area of ​​the display unit 8302. This allows a panoramic image to be displayed across both ends of the field of view, thereby enhancing the sense of reality.

[0570] Here, the electronic device 8300 preferably has a mechanism for changing the curvature of the display portion 8302 to an appropriate value depending on the size of the user's head, the position of the user's eyes, or the like. For example, the user may adjust the curvature of the display portion 8302 by operating a dial 8307 for adjusting the curvature of the display portion 8302. Alternatively, the electronic device 8300 may have a mechanism for adjusting the curvature of the display portion 8302 based on detection data from a sensor (for example, a camera, a contact sensor, or a non-contact sensor) that detects the size of the user's head, the position of the user's eyes, or the like.

[0571] In addition, when the lens 8305 is used, it is preferable to provide a mechanism for adjusting the position and angle of the lens 8305 in synchronization with the curvature of the display portion 8302. Alternatively, the dial 8306 may have a function for adjusting the angle of the lens.

[0572] 35E and 35F show an example including a driver 8308 that controls the curvature of the display portion 8302. The driver 8308 is fixed to at least a part of the display portion 8302. The driver 8308 has a function of deforming the display portion 8302 by deforming or moving a part fixed to the display portion 8302.

[0573] 35E is a schematic diagram showing a case where a user 8310 with a relatively large head size is wearing the housing 8301. In this case, the shape of the display portion 8302 is adjusted by the driving unit 8308 so that the curvature is relatively small (the radius of curvature is large).

[0574] On the other hand, Figure 35F shows a case where a user 8311, whose head is smaller than that of the user 8310, is wearing the housing 8301. The user 8311 has a smaller distance between their eyes than the user 8310. In this case, the shape of the display unit 8302 is adjusted by the drive unit 8308 so that the curvature of the display unit 8302 is larger (the radius of curvature is smaller). In Figure 35F, the position and shape of the display unit 8302 in Figure 35E are indicated by dashed lines.

[0575] In this manner, the electronic device 8300 has a mechanism for adjusting the curvature of the display portion 8302, and can provide an optimal display to various users, regardless of age or gender.

[0576] Furthermore, by changing the curvature of the display portion 8302 in accordance with the content displayed on the display portion 8302, a high sense of realism can be given to the user. For example, shaking can be expressed by vibrating the curvature of the display portion 8302. In this way, various effects can be produced according to the scene in the content, and a new experience can be provided to the user. Furthermore, by linking the display portion 8302 with a vibration module provided in the housing 8301, a more realistic display can be achieved.

[0577] Note that the electronic device 8300 may have two display units 8302 as shown in FIG. 35D.

[0578] By having two display units 8302, the user can view one display unit per eye. This allows high-resolution images to be displayed even when performing 3D display using parallax. Furthermore, the display unit 8302 is curved in an arc shape roughly centered on the user's eye. This allows the distance from the user's eye to the display surface of the display unit to be constant, allowing the user to view more natural images. Furthermore, even if the brightness and chromaticity of light from the display unit change depending on the viewing angle, this effect can be substantially ignored because the user's eye is positioned in the normal direction to the display surface of the display unit, allowing for the display of more realistic images.

[0579] 36A to 36C are diagrams showing the appearance of electronic device 8300, which is different from electronic device 8300 shown in each of Figures 35A to 35D. Specifically, for example, Figures 36A to 36C differ from Figures 35A to 35D in that electronic device 8300 has a fixture 8304a that is attached to the head and a pair of lenses 8305.

[0580] A user can view the display on the display portion 8302 through the lens 8305. Note that it is preferable to curve the display portion 8302 because the user can feel a high sense of presence. In addition, by viewing different images displayed in different regions of the display portion 8302 through the lens 8305, three-dimensional display using parallax can be performed. Note that the configuration is not limited to one display portion 8302, and two display portions 8302 may be provided, with one display portion being arranged for each eye of the user.

[0581] Note that, for example, a display device with extremely high definition is preferably used for the display portion 8302. By using a display device with high definition for the display portion 8302, even if an image is enlarged using a lens 8305 as in Fig. 36C , pixels are not visible to the user, and a more realistic image can be displayed.

[0582] Furthermore, a head-mounted display which is an electronic device of one embodiment of the present invention may have the structure of an electronic device 8200 which is a glasses-type head-mounted display illustrated in FIG. 36D.

[0583] The electronic device 8200 includes a mounting portion 8201, a lens 8202, a main body 8203, a display portion 8204, and a cable 8205. The mounting portion 8201 includes a built-in battery 8206.

[0584] A cable 8205 supplies power from a battery 8206 to the main body 8203. The main body 8203 includes a wireless receiver or the like and can display received video information on a display portion 8204. The main body 8203 also includes a camera and can use information on the movement of the user's eyeballs or eyelids as an input means.

[0585] The wearing unit 8201 may be provided with a plurality of electrodes at positions that come into contact with the user, capable of detecting a current that flows in association with the movement of the user's eyeballs, and may have a function of recognizing the line of sight. The wearing unit 8201 may also have a function of monitoring the user's pulse based on the current that flows through the electrodes. The wearing unit 8201 may also have various sensors such as a temperature sensor, a pressure sensor, and an acceleration sensor, and may have a function of displaying biometric information of the user on the display unit 8204, a function of changing an image displayed on the display unit 8204 in accordance with the movement of the user's head, and the like.

[0586] 37A to 37C are diagrams showing the appearance of an electronic device 8750, which is different from the electronic device 8300 shown in FIGS. 35A to 35D and 36A to 36C, respectively, and the electronic device 8200 shown in FIG. 36D.

[0587] 37A is a perspective view showing the front, top, and left side of electronic device 8750, and FIGS. 37B and 37C are perspective views showing the back, bottom, and right side of electronic device 8750. FIG.

[0588] The electronic device 8750 includes a pair of display devices 8751, a housing 8752, a pair of mounting portions 8754, a buffer member 8755, and a pair of lenses 8756. The pair of display devices 8751 are provided inside the housing 8752 at positions where they can be seen through the lenses 8756.

[0589] Here, one of the pair of display devices 8751 corresponds to, for example, the display device DSP shown in FIG. 10 . Although not shown, the electronic device 8750 shown in FIGS. 37A to 37C includes an electronic component having a processing unit described in the previous embodiment (e.g., the peripheral circuit PRPH described in Embodiment 1). Although not shown, the electronic device 8750 shown in FIGS. 37A to 37C includes a camera (e.g., the imaging pixel described in Embodiment 1). The camera can capture an image of a user's eye and its vicinity. Although not shown, the electronic device 8750 shown in FIGS. 37A to 37C includes a motion detection unit, audio, a control unit, a communication unit, and a battery in a housing 8752.

[0590] The electronic device 8750 is an electronic device for VR. A user wearing the electronic device 8750 can view an image displayed on a display device 8751 through a lens 8756. Also, by displaying different images on the pair of display devices 8751, three-dimensional display using parallax can be performed.

[0591] An input terminal 8757 and an output terminal 8758 are provided on the back side of the housing 8752. The input terminal 8757 can be connected to a cable for supplying a video signal from a video output device or power for charging a battery provided in the housing 8752. The output terminal 8758 functions as, for example, an audio output terminal, and earphones or headphones can be connected to the output terminal 8758.

[0592] The housing 8752 preferably has a mechanism for adjusting the left and right positions of the lens 8756 and the display device 8751 so that they are optimally positioned according to the position of the user's eyes. Also, the housing 8752 preferably has a mechanism for adjusting the focus by changing the distance between the lens 8756 and the display device 8751.

[0593] By using the camera, the display device 8751, and the electronic components, the electronic device 8750 can estimate the state of a user of the electronic device 8750 and display information relating to the estimated state of the user on the display device 8751. Alternatively, information relating to the state of a user of an electronic device connected to the electronic device 8750 via a network can be displayed on the display device 8751.

[0594] The buffer member 8755 is a portion that comes into contact with the user's face (e.g., the forehead or cheek). The close contact of the buffer member 8755 with the user's face can prevent light leakage and enhance the sense of immersion. The buffer member 8755 is preferably made of a soft material so that it can be in close contact with the user's face when the user wears the electronic device 8750. Materials such as rubber, silicone rubber, urethane, and sponge can be used. Furthermore, using a sponge whose surface is covered with cloth or leather (e.g., natural leather or synthetic leather) can prevent gaps from forming between the user's face and the buffer member 8755, thereby favorably preventing light leakage. Furthermore, using such a material is preferable because it feels pleasant to the touch and prevents the user from feeling cold when worn in cold seasons. It is preferable that components that come into contact with the user's skin, such as the buffer member 8755 or the attachment portion 8754, be removable for easy cleaning or replacement.

[0595] The electronic device of this embodiment may further include an earphone 8754A. The earphone 8754A has a communication unit (not shown) and has a wireless communication function. The earphone 8754A can output audio data using the wireless communication function. The earphone 8754A may also have a vibration mechanism that functions as a bone conduction earphone.

[0596] 37C , the earphone 8754A can be directly connected to the attachment portion 8754 or connected by wire. The earphone 8754B and the attachment portion 8754 may have a magnet. This allows the earphone 8754B to be fixed to the attachment portion 8754 by magnetic force, which is preferable because it makes storage easier.

[0597] The earphone 8754A may have a sensor unit that can be used to estimate the state of the user of the electronic device.

[0598] In addition to any one of the above-described configuration examples, the electronic device of one embodiment of the present invention may include one or more selected from an antenna, a battery, a camera, a speaker, a microphone, a touch sensor, and an operation button.

[0599] The electronic device of one embodiment of the present invention may include a secondary battery, and it is preferable that the secondary battery can be charged using contactless power transmission.

[0600] Examples of secondary batteries include lithium ion secondary batteries (e.g., lithium polymer batteries (lithium ion polymer batteries) using a gel electrolyte), nickel-metal hydride batteries, nickel-cadmium batteries, organic radical batteries, lead-acid batteries, air secondary batteries, nickel-zinc batteries, and silver-zinc batteries.

[0601] The electronic device of one embodiment of the present invention may include an antenna. By receiving a signal through the antenna, images and information can be displayed on a display portion. When the electronic device includes an antenna and a secondary battery, the antenna may be used for contactless power transmission.

[0602] The display portion of the electronic device according to one embodiment of the present invention can display images with a resolution of, for example, full high definition, 4K2K, 8K4K, 16K8K, or higher.

[0603] Note that this embodiment mode can be appropriately combined with other embodiment modes described in this specification.

[0604] DSP: display device, DSP_L: display device, DSP_R: display device, DIS: display unit, MA: imaging area, LEA: imaging light source area, STA: standby area, CSB: center, ARA: area, ARA[1,1]: area, ARA[1,2]: area, ARA[1,n-1]: area, ARA[1,n]: area, ARA[2,1]: area, ARA[2,2]: area, ARA[2,n-1]: area, ARA[2,n]: area, ARA[m-1,1]: area, ARA[m-1,2]: area, ARA[m-1,n-1]: area, ARA[m-1,n]: area, ARA[m,1 ]: area, ARA[m,2]: area, ARA[m,n-1]: area, ARA[m,n]: area, ARD[1,1]: circuit area, ARD[1,2]: circuit area, ARD[1,n-1]: circuit area, ARD[1,n]: circuit area, ARD[2,1]: circuit area, ARD[2,2]: Circuit area, ARD[2,n-1]: circuit area, ARD[2,n]: circuit area, ARD[m-1,1]: circuit area, ARD[m-1,2]: circuit area, ARD[m-1,n-1]: circuit area, ARD[m-1,n]: circuit area, ARD[m,1]: circuit area, ARD[m,2]: times Path area, ARD[m,n-1]: circuit area, ARD[m,n]: circuit area, LIG: light, ME: user's eye, ME_L: user's left eye, ME_R: user's right eye, HMD: electronic device, KYT: housing, AP: circuit, PX: circuit, PX_L: circuit, PX_R: circuit, PX_G: circuit, PX_B: circuit, PV: circuit, SL: wiring, SL_R: wiring, SL_G: wiring, SL_B: wiring, OL: wiring, FS: wiring, PWL: wiring, SE: wiring, RS: wiring, TX: wiring, GL: wiring, CT1: wiring, CT2: wiring, PXAL: pixel layer, LINL: wiring layer, SICL: Circuit layer, LIA: area, DRV: driver circuit area, BS: substrate, PRPH: peripheral circuit, SD: driver circuit, SDS: circuit, DMS: distribution circuit, GD: driver circuit, GDS: circuit, DMG: distribution circuit, RD: driver circuit, RDS: circuit, RMG: distribution circuit, TD: driver circuit, TDS: circuit, TMG: distribution circuit, CTR: control unit, MD: memory device, PG: voltage generation circuit, GPS: image processing unit, CKS: clock signal generation circuit, TMC: timing controller, BW: bus wiring, MCS: microscope, KYI: housing, CYL: cylindrical shape, CNE: conical shape,KKB: opening, RNS: lens, ISP: light-emitting device, LGT1: light, LGT2: light, SMP: smartphone, USR: user, EML: layer, OSL: layer, GL1: wiring, GL2: wiring, GL3: wiring, V0: wiring, VCOM: wiring, ANO: wiring, R: sub-pixel, G: sub-pixel, B: sub-pixel, W: sub-pixel, PS: imaging pixel, 30: circuit, 85R: hole injection layer, 85G: hole injection layer, 85B: hole injection layer, 86R: hole transport layer, 86G: hole transport layer, 86B: hole transport layer, 86PD: hole transport layer, 87R: light-emitting layer, 87G: light-emitting layer, 87B : light-emitting layer, 88R: electron transport layer, 88G: electron transport layer, 88B: electron transport layer, 88PD: electron transport layer, 89: common layer, 90: light-receiving layer, 91: protective layer, 92: insulating layer, 102: substrate, 111: insulator, 111a: insulator, 111b: insulator, 112: insulator, 113: insulator, 113a: insulator, 113b: insulator, 113c: insulator, 118: mask layer, 119: mask layer, 121a: conductor, 121b: conductor, 121c: conductor, 121CM: conductor, 121B: conductor, 121G: conductor, 121R: conductor, 121PD: conductor, 122a: conductor , 122b: conductor, 122c: conductor, 123: conductor, 123CM: region, 141a: EL layer, 141b: EL layer, 141c: EL layer, 142: EL layer, 150a: light-emitting device, 150b: light-emitting device, 150c: light-emitting device, 150B: light-emitting device, 150G: light-emitting device, 150R: light-emitting device, 150IR: light-emitting device, 160: light-receiving device, 162: insulator, 163: resin layer, 164: adhesive layer, 165: adhesive layer, 166a: colored layer, 166b: colored layer, 166c: colored layer, 170A: pixel, 170B: pixel, 180: pixel, 180a: sub-display pixel, 180b: sub-display pixel, 180c: sub-display pixel, 180d: sub-display pixel, 200: transistor, 202: insulator, 210: substrate, 214: insulator, 216: conductor, 220: insulator, 222: insulator, 224: insulator, 226: insulator, 228: conductor, 230: conductor, 250: insulator, 300: transistor, 310: substrate, 312: element isolation layer, 313: semiconductor region, 314a: low resistance region, 314b: low resistance region, 315: insulator, 316: conductor, 317: insulator, 320: insulator, 322: insulator, 324: insulator,326: insulator, 328: conductor, 330: conductor, 350: insulator, 351: substrate, 352: insulator, 353: layer, 354: insulator, 355: functional layer, 356: conductor, 357: layer, 359: substrate, 360: insulator, 362: insulator, 364: insulator, 366: conductor, 370: insulator, 372: insulator, 376: conductor, 380: insulator, 400: pixel circuit, 400A: pixel circuit, 400B: pixel circuit, 400C: pixel circuit, 400D: pixel circuit, 400E: pixel circuit, 400F: pixel circuit, 400G: Pixel circuit, 400H: pixel circuit, 410: driver circuit, 500: transistor, 500A: transistor, 500B: transistor, 500C: transistor, 500D: transistor, 501: substrate, 512: insulator, 514: insulator, 540: conductor, 576: insulator, 581: insulator, 600: capacitor, 600A: capacitor, 1000: display device, 1280: display module, 1281: display unit, 1290: FPC, 1282: circuit unit, 1283: pixel circuit unit, 1283a: pixel circuit, 1284: pixel unit, 128 4a: pixel, 1285: terminal portion, 1286: wiring portion, 1291: substrate, 1292: substrate, 1430a: light-emitting device, 1430b: light-emitting device, 1430c: light-emitting device, 4400a: light-emitting unit, 4400b: light-emitting unit, 4411: light-emitting layer, 4412: light-emitting layer, 4413: light-emitting layer, 4420: layer, 4420-1: layer, 4420-2: layer, 4430: layer, 4430-1: layer, 4430-2: layer, 4440: intermediate layer, 8200: electronic device, 8201: mounting portion, 8202: lens, 8203: main body, 8 204: display unit, 8205: cable, 8206: battery, 8300: electronic device, 8301: housing, 8302: display unit, 8303: operation button, 8304: fixture, 8304a: fixture, 8305: lens, 8306: dial, 8307: dial, 8308: drive unit, 8310: user, 8311: user, 8750: electronic device, 8751: display device, 8752: housing, 8754: wearing unit, 8754A: earphone, 8754B: earphone, 8756: lens, 8757: input terminal, 8758: output terminal,

Claims

1. a display unit including a first region and a second region; the first region has imaging pixels; the second region has a light-emitting pixel, the light-emitting pixel has a light-emitting device that has a function of emitting infrared light, the imaging pixel has a light receiving device that has a function of receiving light emitted from the light emitting pixel, the first area and the second area have a function of displaying an image, the center of the display unit is a circular area having a center at the point where two diagonal lines drawn on the display unit intersect, the radius of the circle is equal to or less than 1 / 8 of the length of the diagonal of the display unit, The first region has a region overlapping with the central portion. Display device.

2. In claim 1, the second region has a square frame shape, The first region is located inside the frame. Display device.

3. A display device comprising: the display device according to claim 1 or claim 2; and a housing; the housing has a shape that can be worn on a human head, When the housing is worn on a person's head, the first area has an area that overlaps with an eye of the person in a front view. electronic equipment.

4. an imaging unit including a plurality of light-emitting pixels and a plurality of imaging pixels; the light-emitting pixel has a light-emitting device that emits infrared light, 1. A method for operating a light emitting device, wherein the imaging pixel has a light receiving device that receives infrared light, the method comprising: A first step and a second step, a first area is an area in which an image is captured by the light receiving device included in the first area and an image is displayed; a second region is a region where the light-emitting device included in the second region emits light and displays an image; a third region is a region in which the light-emitting pixels and the imaging pixels included in the third region are put into a standby state and a region in which an image is displayed; the first step includes a step of setting the first area, the second area, and the third area in the imaging unit, the second step includes a step of resetting the first area set in the imaging unit to the second area or the third area, resetting the second area set in the imaging unit to the first area or the third area, and resetting a part of the third area set in the imaging unit to the first area or the second area. A method of operating a light emitting device.

5. an imaging unit including a plurality of light-emitting pixels and a plurality of imaging pixels; the light-emitting pixel has a light-emitting device that emits infrared light, 1. A method for operating a light emitting device, wherein the imaging pixel has a light receiving device that receives infrared light, the method comprising: a first area is an area in which an image is captured by the light receiving device included in the first area and an image is displayed; a second region is a region where the light-emitting device included in the second region emits light and displays an image; the first step includes a step of setting the first area and the second area in the imaging unit; the second step includes a step of resetting the first area set in the imaging unit to the second area and resetting the second area set in the imaging unit to the first area. A method of operating a light emitting device.