Substrate surface treatment equipment

Abstract

The present disclosure provides a substrate surface treatment device that improves the utilization efficiency of a treatment liquid mist on the surface of a substrate. The exhaust mechanism (31) in the substrate surface treatment device (101) of the present disclosure is disposed below a transfer stage (2) that moves along a transfer path (R2) and has an exhaust port (A31) in an area that overlaps with the transfer path (R2) in a plan view. The exhaust mechanism (31) performs an exhaust process by taking in a treatment liquid mist gas (22) through the exhaust port (A31) and exhausting it to the outside of the surface treatment chamber (51). This exhaust process forms a mist gas flow path (22a) that extends along the surface of the substrate (1) and includes a region near the substrate surface.

Description

[Technical Field]

[0001] The present disclosure relates to a substrate surface treatment apparatus that treats the surface of a substrate using a treatment liquid mist gas. [Background technology]

[0002] Conventional substrate surface treatment devices that treat the surface of a substrate using a treatment liquid mist gas are used in the manufacture of semiconductor devices and electronic components, and the treatment liquid mist gas contains a treatment liquid mist obtained by misting a treatment liquid.

[0003] Conventional substrate surface treatment devices treat the surface of a substrate by supplying a mist gas of a treatment liquid to the surface of the substrate using a mist gas supply mechanism. An example of a conventional substrate surface treatment device is a thin film manufacturing device disclosed in Patent Document 1. [Prior art documents] [Patent documents]

[0004] [Patent Document 1] JP 2019-72700 A Summary of the Invention [Problem to be solved by the invention]

[0005] In conventional substrate surface treatment devices, a treatment liquid mist is generated, for example, by applying ultrasonic vibrations to the treatment liquid. The particle size of the treatment liquid mist is 15 μm or less, which is smaller than the particle size of the spray mist obtained by spray treatment. Therefore, even if a treatment liquid mist gas containing the treatment liquid mist is supplied to the surface of the substrate, a relatively large amount of the treatment liquid mist gas diffuses and does not reach the surface of the substrate.

[0006] The treatment liquid mist contained in the treatment liquid mist gas that does not reach the surface of the substrate does not contribute to the surface treatment of the substrate, and therefore the utilization efficiency of the treatment liquid mist decreases. The utilization efficiency of the treatment liquid mist is the ratio of the mist consumption amount to the mist supply amount. Here, the mist supply amount is the supply amount of the treatment liquid mist contained in the treatment liquid mist gas supplied by the mist gas supply mechanism, and the mist consumption amount is the consumption amount of the treatment liquid mist used in the surface treatment of the substrate.

[0007] As described above, conventional substrate surface treatment devices have had the problem of poor utilization efficiency of the treatment liquid mist on the surface of the substrate.

[0008] An object of the present disclosure is to provide a substrate surface treatment device that solves the above-mentioned problems and improves the utilization efficiency of the treatment liquid mist on the surface of the substrate. [Means for solving the problem]

[0009] The substrate surface treatment device according to the present disclosure is a substrate surface treatment device that treats the surface of a substrate having a front and back surface, and includes a transport stage that places the back surface of the substrate on a mounting surface and transports the substrate by moving itself, and a mist gas supply mechanism that supplies a treatment liquid mist gas toward the surface of the substrate being transported, wherein the area along which the transport stage moves is defined as a transport path, and the treatment liquid mist gas includes a treatment liquid mist obtained by misting a treatment liquid, and the substrate surface treatment device further includes an exhaust mechanism that has an exhaust port in an area that overlaps with the transport path in a plan view, and performs exhaust processing to exhaust the treatment liquid mist gas from the exhaust port. [Effects of the Invention]

[0010] The exhaust mechanism of the substrate surface treatment device of the present disclosure has an exhaust port in an area that overlaps with the transport path when viewed in a plane, so that when exhaust treatment is performed, a mist gas circulation path for the treatment liquid mist gas is formed that includes the area near the substrate surface along the surface of the substrate.

[0011] As a result, the treatment liquid mist gas that does not reach the surface of the substrate due to diffusion or the like flows through the region near the substrate surface included in the mist gas flow path, and as a result, the treatment liquid mist contained in the treatment liquid mist gas flowing through the region near the substrate surface re-adheres to the surface of the substrate.

[0012] As a result, the substrate surface treatment device of the present disclosure can increase the amount of treatment liquid mist used on the surface of the substrate, thereby improving the utilization efficiency of the treatment liquid mist on the surface of the substrate.

[0013] The objects, features, aspects, and advantages of the present disclosure will become more apparent from the following detailed description and the accompanying drawings. [Brief explanation of the drawings]

[0014] [Figure 1] 1 is an explanatory diagram (part 1) schematically illustrating the overall structure of a substrate surface treatment device according to a first embodiment. FIG. [Figure 2] FIG. 2 is an explanatory diagram (part 2) schematically illustrating the overall structure of the substrate surface treatment device of the first embodiment. [Figure 3] 1 is an explanatory diagram showing a planar structure of a substrate surface treatment device according to a first embodiment. [Figure 4] FIG. 1 is an explanatory diagram (part 1) that schematically illustrates the basic configuration of a substrate surface treatment device according to a second embodiment. [Figure 5] FIG. 2 is an explanatory diagram (part 2) that schematically illustrates the basic configuration of the substrate surface treatment device of the second embodiment. [Figure 6] FIG. 6 is an explanatory diagram showing a planar structure of the substrate surface treatment device shown in FIGS. 4 and 5. [Figure 7] FIG. 10 is an explanatory diagram showing, in table form, the mist adhesion effect of the basic configuration of the substrate surface treatment apparatus of the second embodiment. [Figure 8] FIG. 10 is an explanatory diagram showing a planar structure of a transfer stage in a substrate surface treating apparatus that is a modified example of the second embodiment. [Figure 9] FIG. 9 is an explanatory diagram schematically showing the cross-sectional structure of the transfer stage shown in FIG. [Figure 10]FIG. 10 is an explanatory diagram (part 1) that schematically illustrates the overall configuration of a substrate surface treatment device according to a third embodiment of the present disclosure. [Figure 11] FIG. 2 is a second explanatory diagram schematically illustrating the overall configuration of the substrate surface treatment device according to the third embodiment of the present disclosure. [Figure 12] FIG. 10 is an explanatory diagram (part 1) that schematically illustrates the overall structure of a substrate surface treatment device according to a fourth embodiment. [Figure 13] FIG. 10 is a second explanatory diagram schematically illustrating the overall structure of the substrate surface treatment device of the fourth embodiment. [Figure 14] FIG. 14 is an explanatory diagram showing the planar structure of the expansion air supply mechanism shown in FIGS. 12 and 13. [Figure 15] FIG. 1 is an explanatory diagram (part 1) schematically illustrating the overall structure of a comparative substrate surface treatment device. [Figure 16] FIG. 2 is an explanatory diagram (part 2) schematically illustrating the overall structure of a comparative substrate surface treatment device. DETAILED DESCRIPTION OF THE INVENTION

[0015] <First Embodiment> 1 to 3 are explanatory diagrams showing the configuration of a substrate surface treating apparatus 101 according to a first embodiment of the present disclosure. Each of Fig. 1 and Fig. 2 is an explanatory diagram showing a schematic view of the overall structure of the substrate surface treating apparatus 101, and Fig. 3 is an explanatory diagram showing the planar structure of the substrate surface treating apparatus 101. Each of Fig. 1 to Fig. 3 shows an XYZ Cartesian coordinate system.

[0016] 1, the substrate surface treatment apparatus 101 includes, as its main components, a surface treatment chamber 51, a mist gas supply mechanism, a transfer stage 2, and an exhaust mechanism 31. The mist gas supply mechanism includes, as its main components, an ultrasonic atomizer 11, a mist supply pipe 12, and a mist ejection unit 21.

[0017] A mist gas supply mechanism, a transfer stage 2, and an exhaust mechanism 31 are provided in the surface treatment chamber 51.

[0018] 1 to 3, the transfer stage 2 places the back surface of the substrate 1, which has a front and back surface, on the front surface, and moves in the transfer direction D2 (+X direction) by a transfer means described later, thereby transferring the substrate 1 along the transfer direction D2. The area in which the transfer stage 2 moves is defined as the transfer path R2.

[0019] The surface of this transfer stage 2 serves as a mounting surface for the substrate 1. The substrate 1 may be, for example, a glass plate or a silicon wafer. The transfer stage 2 is rectangular in plan view on the XY plane, and has four side surfaces at both ends in the X direction and both ends in the Y direction. The substrate 1 is also rectangular in plan view on the XY plane. As shown in FIG. 1, the side surfaces at both ends of the transfer stage 2 in the X direction are side surfaces S2x, S2x, and as shown in FIG. 2, the side surfaces at both ends of the transfer stage 2 in the Y direction are side surfaces S2y, S2y. The distance between side surfaces S2y, S2y is distance L2y.

[0020] The stage transport process for moving the transport stage 2 along the transport direction D2 can be realized by using an existing transport means such as a linear transport mechanism or a belt conveyor.

[0021] The ultrasonic atomizer 11 generates a treatment liquid mist by applying ultrasonic vibrations to the treatment liquid contained inside, and uses a carrier gas G1 supplied from the outside to propagate a treatment liquid mist gas 22 containing the treatment liquid mist toward the mist spray section 21 through the mist supply pipe 12.

[0022] The mist jetting unit 21 receives the treatment liquid mist gas 22 via the mist supply pipe 12 and jets the treatment liquid mist gas 22 downward (in the -Z direction) toward the transport path R2. As such, since the mist jetting unit 21 is disposed above the transport path R2, the treatment liquid mist gas 22 jetted from the mist jetting unit 21 in the -Z direction is supplied to the surface of the substrate 1 being transported along the transport path R2.

[0023] In this way, the mist gas supply mechanism including the ultrasonic atomizer 11, the mist supply pipe 12, and the mist ejection part 21 can supply the treatment liquid mist gas 22 toward the surface of the substrate 1 transported along the transport path R2. The treatment liquid mist gas 22 contains the treatment liquid mist obtained by misting the treatment liquid.

[0024] In addition, in Figures 1 and 2, the ultrasonic atomizer 11 and the mist supply pipe 12 are shown schematically, and the arrangement of the ultrasonic atomizer 11 and the mist supply pipe 12 shown in Figures 1 and 2 does not necessarily reflect the actual arrangement.

[0025] The exhaust mechanism 31 is disposed below (in the -Z direction) the transfer stage 2, which moves along a transfer path R2 having a transfer width LY, and has an exhaust port A31 facing upward. The transfer width LY corresponds to the length of the transfer stage 2 in the Y direction, i.e., the distance L2y between the side surfaces S2y, S2y shown in FIG.

[0026] 3, the exhaust mechanism 31 has an exhaust port A31 in an area overlapping with the transport path R2 having the transport width LY in a plan view, and performs an exhaust process of taking in the treatment liquid mist gas 22 from the exhaust port A31 and exhausting the taken in treatment liquid mist gas 22 to the outside of the surface treatment chamber 51. 1 It is desirable that all of these overlap with the transport route R2 in plan view.

[0027] 2, a processing space gas flow F51 (flow velocity V1) directed downward (in the -Z direction) can be formed in the surface treatment chamber 51 by the exhaust process of the exhaust mechanism 31 disposed below the transfer path R2. The exhaust mechanism 31 performs the exhaust process using existing technology such as driving an exhaust fan (not shown).

[0028] As described above, in the substrate surface treating apparatus 101 of the first embodiment, the mist jetting unit 21 of the mist gas supply mechanism is disposed above the transport path R2, and the exhaust mechanism 31 is disposed below the transport path R2.

[0029] The exhaust mechanism 31 of the substrate surface treatment device 101 of embodiment 1 has an exhaust port A31 in an area overlapping with the transport path R2 in a plan view, and performs exhaust processing to take in the treatment liquid mist gas 22 from the exhaust port A31 and exhaust it to the outside of the surface treatment chamber 51.

[0030] In the substrate surface treatment device 101 of embodiment 1, even when the treatment liquid mist gas 22 containing the treatment liquid mist is supplied to the surface of the substrate 1 by the mist gas supply mechanism, some of the treatment liquid mist gas 22 diffuses and does not reach the surface of the substrate 1.

[0031] On the other hand, when the exhaust mechanism 31 performs the exhaust process, a mist gas flow path 22a of the treatment liquid mist gas 22 is formed along the surface of the substrate 1 and including the area near the substrate surface.

[0032] 1 and 2, the mist gas flow path 22a is formed from above the surface of the substrate 1 (+Z direction), passing above the surface of the transfer stage 2 (+Z direction) and above the four side surfaces (S2x, S2x, S2y, S2y) of the transfer stage 2, and from below the rear surface of the transfer stage 2 (-Z direction) toward the exhaust port A31. The surface of the substrate 1 and the area above the surface are the area near the substrate surface.

[0033] Therefore, at least a portion of the treatment liquid mist gas 22 that is sprayed from the mist spraying portion 21 but does not reach the surface of the substrate 1 due to a diffusion phenomenon or the like flows through the mist gas flow path 22a including the region near the substrate surface, and as a result, the treatment liquid mist contained in the treatment liquid mist gas 22 flowing through the region near the substrate surface re-adheres to the surface of the substrate 1.

[0034] As a result, the substrate surface treatment device 101 of embodiment 1 can increase the amount of treatment liquid mist used on the surface of the substrate 1, thereby improving the utilization efficiency of the treatment liquid mist on the surface of the substrate 1.

[0035] 2, the mist gas circulation path 22a is also formed above the side surface S2y (in the ±Y direction) of the transfer stage 2 on the ±Y direction side, so that the treatment liquid mist gas 22 can be guided to the exhaust port A31 without any problems even when the transfer means is a belt conveyor. This is because the mist gas circulation path 22a formed above the side surface S2y of the transfer stage 2 is in an area outside the transfer path R2.

[0036] Furthermore, the mist gas flow path 22a formed above the side surfaces S2x, S2x of the transfer stage 2 can also guide the processing liquid mist gas 22 to the exhaust port A31 via the opening area of ​​the belt conveyor.

[0037] In addition, the mist gas supply mechanism in the substrate surface treatment device 101 of embodiment 1 includes an ultrasonic atomizer 11 that generates treatment liquid mist by applying ultrasonic vibrations to the treatment liquid, so that a treatment liquid mist gas 22 containing treatment liquid mist with a relatively small particle size, for example, 15 μm or less, can be obtained.

[0038] Therefore, since the particle size of the treatment liquid mist is small, the proportion of the treatment liquid mist gas 22 that flows through the mist gas flow path 22a including the area near the substrate surface increases among the treatment liquid mist gas 22 that does not reach the surface of the substrate 1.

[0039] As a result, the substrate surface treatment device 101 of embodiment 1 increases the amount of treatment liquid mist gas 22 flowing through the area near the substrate surface, thereby increasing the amount of treatment liquid mist used on the surface of the substrate 1 and further improving the utilization efficiency of the treatment liquid mist on the surface of the substrate 1.

[0040] Since the mist ejection section 21 of the substrate surface treatment device 101 of embodiment 1 is positioned above the transport path R2, the treatment liquid mist gas 22 ejected downward from the mist ejection section 21 can be directly supplied to the surface of the substrate 1 being transported along the transport path R2, thereby allowing the treatment liquid mist to adhere to the surface of the substrate 1.

[0041] Since the exhaust mechanism 31 of the substrate surface treatment device 101 of the first embodiment is disposed below the transfer path R2, the exhaust process of the exhaust mechanism 31 forms a processing space gas flow F51 with a flow velocity V1 in the -Z direction, thereby forming a mist gas circulation path 22a from above the surface of the substrate 1 toward the exhaust port A31. This mist gas circulation path 22a necessarily includes the region near the substrate surface.

[0042] Therefore, the degree to which the treatment liquid mist contained in the treatment liquid mist gas flowing through the region in the mist gas flow path 22a near the substrate surface adheres to the surface of the substrate 1 can be increased.

[0043] As a result, the substrate surface treatment device 101 of embodiment 1 can increase the amount of treatment liquid mist used on the surface of the substrate 1, thereby further improving the utilization efficiency of the treatment liquid mist on the surface of the substrate 1.

[0044] <Embodiment 2> (Basic configuration) Figures 4 to 6 are explanatory diagrams showing the basic configuration of a substrate surface treating apparatus 102 according to a second embodiment of the present disclosure. Figures 4 and 5 are explanatory diagrams each showing a schematic view of the overall structure of the substrate surface treating apparatus 102, and Figure 6 is an explanatory diagram showing the planar structure of the substrate surface treating apparatus 102 shown in Figures 4 and 5. An XYZ Cartesian coordinate system is depicted in each of Figures 4 to 6.

[0045] Hereinafter, the same reference symbols will be used for components similar to those of embodiment 1 shown in Figures 1 to 3, and explanations will be omitted as appropriate. The following will focus on the features of the substrate surface treatment device 102, which is the basic configuration of embodiment 2.

[0046] 4, the substrate surface treatment apparatus 102 includes, as its main components, a mist gas supply mechanism and a transfer stage 2B. As in embodiment 1, the mist gas supply mechanism includes, as its main components, an ultrasonic atomizer 11, a mist supply pipe 12, and a mist ejection unit 21. The mist gas supply mechanism and the transfer stage 2B may be provided in the surface treatment chamber 51, as in the substrate surface treatment apparatus 101 of embodiment 1.

[0047] 4 to 6, the transfer stage 2B places the substrate 1 on the substrate placement area 3 on the surface that serves as the placement surface, and moves in the transfer direction D2 (+X direction) by an existing transfer means, thereby transferring the substrate 1 along the transfer direction D2. The area in which the transfer stage 2B moves is defined as the transfer path R2.

[0048] The substrate surface treating apparatus 102 of the second embodiment is characterized by the provision of a transfer stage 2B with a built-in exhaust mechanism 32. The exhaust mechanism 32 provided in the transfer stage 2B moves integrally with the transfer stage 2B, and therefore the exhaust mechanism 32 is provided within the transfer path R2.

[0049] 6, the transfer stage 2B has a rectangular shape when viewed in plan on the XY plane, and has two side surfaces S2x, S2x at both ends in the X direction and two side surfaces S2y, S2y at both ends in the Y direction. The surface of the transfer stage 2B has a substrate placement area 3 in the central area for placing the substrate 1. The substrate placement area 3 has a formation area slightly larger than that of the substrate 1.

[0050] The substrate 1 is placed on the surface of the transfer stage 2B in the substrate placement area 3. In this manner, the transfer stage 2B has the substrate placement area 3 on its surface for placing the substrate 1 thereon.

[0051] The transfer stage 2B has two exhaust ports A32 as a plurality of exhaust ports provided on its surface. As shown in Fig. 6, one of the two exhaust ports A32 is provided on the +Y side of the substrate placement area 3, and the other is provided on the -Y side of the substrate placement area 3. In this way, the two exhaust ports A32 provided on the surface of the transfer stage 2B are arranged so as not to overlap with the substrate placement area 3.

[0052] The exhaust mechanism 32 performs an exhaust process by combining the processing liquid mist gas 22 taken in from the two exhaust ports A32 inside and then exhausting it to the outside. By providing the exhaust mechanism 32 inside the transfer stage 2B, the exhaust process of the exhaust mechanism 32 arranged inside the transfer path R2 can form a processing space gas flow F51 (flow velocity V2) directed downward (in the -Z direction). The exhaust mechanism 32 performs the exhaust process using existing technology, such as driving an exhaust fan (not shown).

[0053] The stage transport process for moving the transport stage 2B along the transport direction D2 can be realized by using an existing transport means such as a linear transport mechanism or a belt conveyor.

[0054] In addition, in Figures 4 and 5, the ultrasonic atomizer 11 and the mist supply pipe 12 are shown schematically, and the arrangement of the ultrasonic atomizer 11 and the mist supply pipe 12 shown in Figures 4 and 5 does not necessarily reflect the actual arrangement.

[0055] In the substrate surface treatment device 102, the mist jetting unit 21 of the mist gas supply mechanism is disposed above the transfer path R2, and the exhaust mechanism 32 is disposed inside the transfer stage 2B, that is, inside the transfer path R2.

[0056] In the substrate surface treatment apparatus 102 of the second embodiment, the exhaust mechanism 32 provided in the transfer stage 2B has two exhaust ports A32. Therefore, the exhaust mechanism 32 performs an exhaust process, takes in the treatment liquid mist gas 22 through the two exhaust ports A32, and exhausts the treatment liquid mist gas 22 to the outside.

[0057] When the exhaust mechanism 32 performs the exhaust process, a mist gas flow path 22b of the processing liquid mist gas 22 is formed along the surface of the substrate 1 and including the region near the substrate surface.

[0058] 4 and 5, the mist gas flow path 22b is formed from above the surface of the substrate 1 (+Z direction) through above the surface of the transfer stage 2B (+Z direction), and from the two exhaust ports A32 to the inside of the exhaust mechanism 32. The surface of the substrate 1 and the area above the surface are the area near the substrate surface.

[0059] Therefore, similar to the substrate surface treating apparatus 101 of the first embodiment, the substrate surface treating apparatus 102 of the second embodiment can improve the utilization efficiency of the treatment liquid mist on the surface of the substrate 1.

[0060] The exhaust mechanism 32 of the substrate surface treatment apparatus 102 of the second embodiment is disposed inside the transfer stage 2B, i.e., inside the transfer path R2, and therefore a processing space gas flow F51 is formed in the -Z direction at a flow velocity V2, thereby forming a mist gas flow path 22b from above the surface of the substrate 1 toward the two exhaust ports A31. This mist gas flow path 22b always includes the area near the substrate surface.

[0061] Therefore, the substrate surface treating apparatus 102 having the basic configuration of the second embodiment can further improve the utilization efficiency of the treatment liquid mist on the surface of the substrate 1, similar to the substrate surface treating apparatus 101 of the first embodiment.

[0062] In addition, since the exhaust mechanism 32 in the substrate surface treatment device 102 of embodiment 2 is provided inside the transfer stage 2B, the mist gas distribution path 22b can be formed by the exhaust process of the exhaust mechanism 32 without being affected by the movement of the transfer stage 2B.

[0063] Furthermore, the substrate surface treatment device 102 of the second embodiment has two exhaust ports A32 on the surface of the transfer stage 2B that do not overlap with the substrate placement area 3. Therefore, the substrate surface treatment device 102 can smoothly exhaust the treatment liquid mist gas 22 from the two exhaust ports A32, and by increasing the exhaust speed accordingly, it is possible to increase the mist gas circulation amount, which is the circulation amount of the treatment liquid mist gas 22 per unit time.

[0064] Therefore, the substrate surface treatment device 102, which is the basic configuration of embodiment 2, can increase the degree of redeposition of the treatment liquid mist contained in the treatment liquid mist gas 22 flowing through the region near the substrate surface of the mist gas flow path 22b onto the surface of the substrate 1 as the exhaust speed of the treatment liquid mist gas 22 is increased.

[0065] It is believed that there is a positive correlation between the exhaust speed by the exhaust process of the exhaust mechanism 32 and the amount of redeposition of the processing liquid mist, until the upper limit of the exhaust speed is exceeded, at which it becomes difficult for the processing liquid mist to redeposit on the surface of the substrate 1. Therefore, it is desirable to set the exhaust speed high within a range that does not exceed the upper limit of the exhaust speed.

[0066] As a result, the substrate surface treatment apparatus 102 according to the second embodiment can further improve the utilization efficiency of the treatment liquid mist on the surface of the substrate 1.

[0067] (comparison device) 15 and 16 are explanatory diagrams that schematically show the overall structure of a comparative substrate surface treatment device 200. An XYZ Cartesian coordinate system is depicted in each of Figs.

[0068] Hereinafter, the same components as those in the first embodiment shown in FIGS. 1 to 3 are denoted by the same reference numerals, and the description thereof will be omitted as appropriate, and the features of a comparative substrate surface treatment device 200 will be mainly described.

[0069] 15 , the substrate surface treatment apparatus 200 includes, as its main components, a surface treatment chamber 53, a mist gas supply mechanism, a transfer stage 2, and an exhaust mechanism 34. Similar to the basic configuration of the first and second embodiments, the mist gas supply mechanism includes, as its main components, an ultrasonic atomizer 11, a mist supply pipe 12, and a mist ejection unit 21. The mist gas supply mechanism, the transfer stage 2, and the exhaust mechanism 34 are provided inside the surface treatment chamber 53.

[0070] The exhaust mechanism 34 in the substrate surface treatment device 200 is characterized by being provided in the ceiling of the surface treatment chamber 53 above the transport path R2 and the mist ejection part 21. The exhaust mechanism 34 has an exhaust port A34 facing downward (toward the -Z direction).

[0071] The exhaust mechanism 34 performs an exhaust process to exhaust the processing liquid mist gas 22 taken in from the exhaust port A34 to the outside of the surface treatment chamber 53. As shown in Fig. 16, the exhaust process of the exhaust mechanism 34 can form a processing space gas flow F53 directed upward (in the +Z direction). The exhaust mechanism 34 performs the exhaust process using existing technology, such as driving an exhaust fan (not shown).

[0072] In addition, in Figures 15 and 16, the ultrasonic atomizer 11 and the mist supply pipe 12 are shown schematically, and the arrangement of the ultrasonic atomizer 11 and the mist supply pipe 12 shown in Figures 15 and 16 does not necessarily reflect the actual arrangement.

[0073] In the substrate surface treatment device 200, the mist jetting part 21 of the mist gas supply mechanism is disposed above the transport path R2, and the exhaust mechanism 34 is disposed above the mist jetting part 21.

[0074] In the comparative substrate surface treatment device 200, the exhaust mechanism 34 performs exhaust processing, takes in the treatment liquid mist gas 22 from the exhaust port A34, and when exhausting it to the outside of the surface treatment chamber 53, a mist gas circulation path 22x for the treatment liquid mist gas 22 is formed.

[0075] As shown in FIGS. 15 and 16, the mist gas flow path 22x is formed from the surface of the substrate 1 toward the exhaust port A34 above.

[0076] In the substrate surface treatment device 200, most of the treatment liquid mist gas 22 that diffuses and does not reach the surface of the substrate 2 is exhausted by the exhaust mechanism 34. However, since the treatment liquid mist gas 22 is ejected downward (in the −Z direction) from the mist ejection part 21 and is further affected by gravity in a downward direction, the mist gas flow path 22x includes a part of the region near the substrate surface.

[0077] As a result, the comparative substrate surface treatment device 200 can redeposit the treatment liquid mist contained in the treatment liquid mist gas 22 flowing through a part of the region near the substrate surface onto the surface of the substrate 1. However, the amount of redeposited treatment liquid mist is inferior to the basic configurations of the first and second embodiments.

[0078] (Comparison results) FIG. 7 is an explanatory diagram showing, in table form, the mist adhesion effect achieved by the substrate surface treatment device 102 according to the second embodiment.

[0079] In each of the substrate surface treatment devices 102 and 200, a plate-shaped substrate having a planar shape of 100 mm × 100 mm and a thickness of 0.3 mm was used as the substrate 1. Ion-exchanged water was used as the treatment liquid for the treatment liquid mist, and the transfer speed of the transfer stage 2 (2B) was set to 100 mm / min. Note that there is a negative correlation between the transfer speed of the transfer stage 2 and the amount of redeposition of the treatment liquid mist.

[0080] The mist adhesion amount, which is the amount of processing liquid mist adhering to the substrate 1, has a positive correlation between ion-exchanged water and the processing liquid actually used. Possible processing liquids actually used include alkaline degreasing liquids (solutions containing sodium hydroxide and phosphoric acid), solutions containing sulfuric acid for acid cleaning treatment, solutions containing iron (III) chloride for etching treatment, solutions containing metal organic compounds such as TEOS for surface modification, and solutions containing sodium hydroxide for resist agent removal.

[0081] In addition, the upward exhaust speed (L / s), which is the exhaust speed by the exhaust mechanism 34 of the substrate surface processing device 200, is set to "9.4", and when the stage exhaust speed (L / s), which is the exhaust speed by the exhaust mechanism 32 built into the transport stage 2B, is "0.3", it is called substrate surface processing device 102-1, and when the stage exhaust speed (L / s) is "0.6", it is called substrate surface processing device 102-2.

[0082] The stage exhaust speeds of the exhaust mechanisms 32 of the substrate surface processing devices 102-1 and 102-2 are exhaust speeds measured at two measurement points P32 of the two exhaust ports A32.

[0083] Under the above conditions, the amount of mist of the treatment liquid mist attached to the surface of the substrate 1 by the substrate surface treatment device 200 (mL / μm 3 ) is set to "1", the amount of mist attached by the substrate surface treatment device 102-1 is improved to "1.05", and the amount of mist attached by the substrate surface treatment device 102-2 is improved to "1.15".

[0084] As can be seen from FIG. 7, the substrate surface treatment apparatus 102 having the basic configuration of the second embodiment has the effect of improving the utilization efficiency of the treatment liquid mist on the surface of the substrate 1.

[0085] In addition, since the surface treatment chamber 53 handles fine treatment liquid mist of 15 μm or less, it is very important to exhaust the treatment liquid mist outside the surface treatment chamber 53, so it is essential to provide an exhaust mechanism 34 in the comparative substrate surface treatment device 200.

[0086] (Variation) Figures 8 and 9 are explanatory diagrams showing the configuration of a substrate surface treating apparatus 102B which is a modified example of embodiment 2 of the present disclosure. Figure 8 is an explanatory diagram showing the planar structure of a transfer stage in the substrate surface treating apparatus 102B, and Figure 9 is an explanatory diagram schematically showing the cross-sectional structure of the transfer stage shown in Figure 8. Each of Figures 8 and 9 shows an XYZ Cartesian coordinate system.

[0087] Hereinafter, the same reference numerals will be used to designate components similar to the basic components of embodiment 2 shown in Figures 4 to 6, and descriptions thereof will be omitted as appropriate. The following will focus on the features of substrate surface treatment device 102B, which is a modified example of embodiment 2.

[0088] The substrate surface processing apparatus 102B includes, as its main components, a mist gas supply mechanism and a transfer stage 2C. That is, compared to the substrate surface processing apparatus 102, the substrate surface processing apparatus 102B is characterized in that it includes a transfer stage 2C instead of the transfer stage 2B.

[0089] 8 and 9, the transfer stage 2C places the substrate 1 on the substrate placement area 3 on the surface that will become the mounting surface, and moves along the transfer direction D2 (+X direction) using an existing transfer means, thereby transferring the substrate 1 along the transfer direction D2. The area in which the transfer stage 2C moves is defined as the transfer path R2.

[0090] The substrate 1 is placed in the substrate placement area 3 on the surface of the transfer stage 2C. In this manner, the transfer stage 2C has the substrate placement area 3 on its surface for placing the substrate 1.

[0091] The substrate surface treating apparatus 102B of the second embodiment is characterized by the provision of a transfer stage 2C with a built-in exhaust mechanism 33. The exhaust mechanism 33 provided in the transfer stage 2C moves integrally with the transfer stage 2C, and therefore the exhaust mechanism 33 is provided within the transfer path R2.

[0092] As shown in Figure 8, the transfer stage 2C has a rectangular shape when viewed in plan on the XY plane, and has four side surfaces (S2x, S2x, S2y, S2y) at both ends in the X direction and the Y direction. A plurality of exhaust ports A33 are provided in a matrix (mesh) on the surface of the transfer stage 2C. Figure 8 shows a plurality of exhaust ports A33 arranged in an 8 x 8 matrix. Note that Figures 8 and 9 show a plurality of exhaust ports A33 schematically, and the number and arrangement of the exhaust ports A33 do not match.

[0093] The surface of the transfer stage 2C has a substrate placement area 3 for placing the substrate 1. The substrate placement area 3 overlaps with a portion of the multiple exhaust ports A33. The substrate placement area 3 has a formation area slightly larger than that of the substrate 1.

[0094] As described above, the multiple exhaust ports A33 provided on the surface of the transfer stage 2C are arranged in a matrix. As shown in Fig. 8, when the substrate 1 is arranged in the substrate placement area 3 on the surface of the transfer stage 2C, most of the multiple exhaust ports A33 do not overlap with the substrate placement area 3. In other words, some of the multiple exhaust ports A33 are arranged so as not to overlap with the substrate placement area 3.

[0095] The exhaust mechanism 33 takes in the processing liquid mist gas 22 from most of the multiple exhaust ports A33 that are not blocked by the substrate 1, merges the gases inside the exhaust mechanism 33, and then exhausts the gas to the outside. Similar to the substrate surface processing device 102, the substrate surface processing device 102B can form a processing space gas flow F51 that flows downward (in the -Z direction) through the exhaust process of the exhaust mechanism 33 provided inside the transfer stage 2C. The exhaust mechanism 33 performs the exhaust process using existing technology, such as driving an exhaust fan (not shown).

[0096] The stage transport process for moving the transport stage 2C along the transport direction D2 can be realized by using an existing transport means such as a linear transport mechanism or a belt conveyor.

[0097] In a substrate surface treating apparatus 102B which is a modification of the second embodiment, the mist jetting unit 21 of the mist gas supply mechanism is disposed above the transfer path R2, and the exhaust mechanism 33 is disposed inside the transfer stage 2C, that is, inside the transfer path R2.

[0098] In a substrate surface treating apparatus 102B that is a modification of the second embodiment, an exhaust mechanism 33 provided in a transfer stage 2C has a plurality of exhaust ports A33 arranged in a matrix pattern. Therefore, the exhaust mechanism 33 can perform an exhaust process, take in the treatment liquid mist gas 22 from most of the plurality of exhaust ports A33, and exhaust it to the outside.

[0099] When the exhaust mechanism 33 performs exhaust processing, a mist gas flow path is formed for the processing liquid mist gas 22, including the region near the surface of the substrate 1, along the surface of the substrate 1. If this mist gas flow path is referred to as a mist gas flow path 22c, the mist gas flow path 22c will be similar to the mist gas flow path 22b of the substrate surface processing device 102 shown in FIGS.

[0100] Therefore, the substrate surface treatment device 102B, which is a modified example of embodiment 2, can improve the utilization efficiency of the treatment liquid mist on the surface of the substrate 1, similar to the substrate surface treatment device 101 of embodiment 1 and the substrate surface treatment device 102, which is the basic configuration of embodiment 2.

[0101] In addition, since the exhaust mechanism 33 in the substrate surface treatment device 102B, which is a modified example of embodiment 2, is provided inside the transfer stage 2C, the exhaust process of the exhaust mechanism 33 can form a mist gas distribution path without being affected by the movement of the transfer stage 2C.

[0102] Furthermore, the substrate surface processing apparatus 102B, which is a modification of the second embodiment, has most of the exhaust ports A33 that do not overlap with the substrate placement area 3 on the surface of the transfer stage 2C. Therefore, the substrate surface processing apparatus 102B can exhaust the processing liquid mist gas 22 without any problems from most of the exhaust ports A33, and by increasing the exhaust speed accordingly, it is possible to increase the amount of mist gas flow.

[0103] In addition, among the multiple exhaust ports A33 arranged in a matrix, there are three or more exhaust ports A33 that do not overlap with the substrate placement area 3, so the modified exhaust mechanism 33 can increase the exhaust speed more than the basic configuration exhaust mechanism 32.

[0104] As mentioned above, it is desirable to set the exhaust speed high within a range that does not exceed the upper limit of the exhaust speed.

[0105] Here, if the flow velocity of the processing space gas flow F51 exhausted by the exhaust mechanism 33 is defined as flow velocity V2B, the flow velocity V2B can be expected to exceed the flow velocity V2 of the processing space gas flow F51 exhausted by the exhaust mechanism 32.

[0106] Therefore, the substrate surface treating apparatus 102B, which is a modification of the second embodiment, can improve the utilization efficiency of the treatment liquid mist on the surface of the substrate 1 more than the substrate surface treating apparatus 102 having the basic configuration.

[0107] Furthermore, in the substrate surface processing device 102B, the formation area of ​​the multiple exhaust ports A33 arranged in a matrix is ​​made sufficiently larger than the formation area of ​​the substrate placement area 3, thereby increasing the degree of freedom of the substrate placement area 3 on the surface of the conveying stage 2C.

[0108] <Third Embodiment> 10 and 11 are explanatory diagrams schematically illustrating the overall configuration of a substrate surface treating apparatus 103 according to the third embodiment of the present disclosure. An XYZ Cartesian coordinate system is depicted in each of Figs.

[0109] Hereinafter, the same components as those in the first embodiment shown in FIGS. 1 to 3 are denoted by the same reference numerals, and the description thereof will be omitted as appropriate. The following description will focus on the features of the substrate surface treatment device 103 of the third embodiment.

[0110] 10 , the substrate surface treatment apparatus 103 includes, as its main components, a surface treatment chamber 51, a mist gas supply mechanism, a transfer stage 2, an exhaust mechanism 31, and an air supply mechanism 41. As in the first and second embodiments, the mist gas supply mechanism includes, as its main components, an ultrasonic atomizer 11, a mist supply pipe 12, and a mist ejection unit 21. The mist gas supply mechanism, the transfer stage 2, the exhaust mechanism 31, and the air supply mechanism 41 are provided inside the surface treatment chamber 51.

[0111] The substrate surface treating apparatus 103 of the third embodiment is characterized in that an air supply mechanism 41 is provided above the transfer path R2 of the transfer stage 2, and an exhaust mechanism 31 is provided below. The air supply mechanism 41 has an air supply port A41 facing downward. On the other hand, the exhaust mechanism 31 has an exhaust port A31 facing upward.

[0112] The air supply mechanism 41 provided on the ceiling of the surface treatment chamber 51 performs an air supply process by supplying the air supply gas G2 into the surface treatment chamber 51 from the air supply port A41.

[0113] The exhaust mechanism 31 is positioned below (-Z direction) the transport stage 2 moving along the transport path R2, has an exhaust port A31 in an area overlapping with the transport path R2 when viewed in a plane, takes in processing liquid mist gas 22 from the exhaust port A31, and performs an exhaust process of exhausting the taken in processing liquid mist gas 22 to the outside of the surface treatment chamber 51.

[0114] Since two air flows are created by the air supply process of the air supply mechanism 41 and the exhaust process of the exhaust mechanism 31, a processing space gas flow F51 (flow velocity V3) directed downward (in the -Z direction) can be formed within the surface treatment chamber 51.

[0115] The flow velocity V3 of the processing space gas flow F51 in the substrate surface treatment device 103 is faster than the flow velocity V1 of the processing space gas flow F51 in the substrate surface treatment device 101 of embodiment 1 by the amount of the additional flow of the supply gas G2 due to the supply treatment of the supply mechanism 41. Note that by forming the supply port A41 of the supply mechanism 41 in an area that overlaps with the transfer path R2 in plan view, similar to the exhaust port A31 of the exhaust mechanism 31, an increase in the flow velocity V3 can be expected.

[0116] 10 and 11, the ultrasonic atomizer 11 and the mist supply pipe 12 are shown schematically, and the arrangement of the ultrasonic atomizer 11 and the mist supply pipe 12 shown in FIGS. 10 and 11 does not necessarily reflect the actual arrangement.

[0117] The substrate surface treatment device 103 of embodiment 3 is provided with an air supply mechanism 41 that is provided above the mist ejection section 21 and supplies the air supply gas G2 from the air supply port A41 into the surface treatment chamber 51, and the exhaust mechanism 31 is arranged below the transport path R2.

[0118] The exhaust mechanism 31 of the substrate surface treatment device 103 of the third embodiment has an exhaust port A31 in an area overlapping with the transfer path R2 in a plan view. Therefore, when the exhaust mechanism 31 performs an exhaust process, takes in the treatment liquid mist gas 22 from the exhaust port A31, and exhausts it to the outside of the surface treatment chamber 51, a mist gas flow path 22d is formed that includes the area near the substrate surface.

[0119] As a result, the substrate surface treatment device 103 of embodiment 3, like the substrate surface treatment device 101 of embodiment 1, can increase the amount of treatment liquid mist used on the surface of the substrate 1, thereby improving the utilization efficiency of the treatment liquid mist on the surface of the substrate 1.

[0120] In addition, since the substrate surface treatment apparatus 103 of the third embodiment further includes the air supply mechanism 41, the supply process of the supply gas G2 by the air supply mechanism 41 and the exhaust process of the treatment liquid mist gas 22 by the exhaust mechanism 31 are performed in parallel. Therefore, two air flows are formed in the surface treatment chamber 51, and the exhaust speed of the treatment liquid mist gas 22 flowing through the mist gas flow path 22d can be increased accordingly.

[0121] As mentioned above, it is desirable to set the exhaust speed high within a range that does not exceed the upper limit of the exhaust speed.

[0122] The increased exhaust speed of the treatment liquid mist gas 22 can increase the degree to which the treatment liquid mist contained in the treatment liquid mist gas 22 flowing through the region of the mist gas flow path 22d near the substrate surface is reattached to the surface of the substrate 1. As a result, the substrate surface treatment device 103 of the third embodiment can further improve the utilization efficiency of the treatment liquid mist on the surface of the substrate 1.

[0123] <Fourth Embodiment> Figures 12 to 14 are explanatory diagrams showing the basic configuration of a substrate surface treating apparatus 104 according to a fourth embodiment of the present disclosure. Figures 12 and 13 are explanatory diagrams each showing a schematic view of the overall structure of the substrate surface treating apparatus 104, and Figure 14 is an explanatory diagram showing the planar structure of the expanded air supply mechanism 42 in the substrate surface treating apparatus 104 shown in Figures 12 and 13. An XYZ Cartesian coordinate system is depicted in each of Figures 12 to 14.

[0124] Hereinafter, the same reference symbols will be used to designate configurations similar to those of embodiment 1 shown in Figures 1 to 3 or embodiment 3 shown in Figures 10 and 11, and explanations will be omitted as appropriate, and the description will focus on the features of the substrate surface treatment device 104 of embodiment 4.

[0125] 12 and 13, the substrate surface treatment apparatus 104 includes, as its main components, a surface treatment chamber 51, a mist gas supply mechanism, a transfer stage 2, an exhaust mechanism 31, and an expansion air supply mechanism 42. As in the first to third embodiments, the mist gas supply mechanism includes, as its main components, an ultrasonic atomizer 11, a mist supply pipe 12, and a mist ejection unit 21. The mist gas supply mechanism, the transfer stage 2, the exhaust mechanism 31, and the expansion air supply mechanism 42 are provided inside the surface treatment chamber 51.

[0126] The substrate surface treating apparatus 104 of the fourth embodiment is characterized in that an expanded air supply mechanism 42 is provided above the transfer path R2 of the transfer stage 2, and an exhaust mechanism 31 is provided below. The expanded air supply mechanism 42 has an air supply port A42 facing downward. On the other hand, the exhaust mechanism 31 has an exhaust port A31 facing upward.

[0127] The expanded air supply mechanism 42 provided on the ceiling of the surface treatment chamber 51 performs an air supply process by supplying the air supply gas G2 into the surface treatment chamber 51 from the air supply port A42 below.

[0128] 14, the air intake port A42 of the extended air intake mechanism 42 overlaps with the transport path R2 in a plan view, and has a formation area larger than the area of ​​the transport stage 2. Furthermore, as shown in Fig. 14, the air intake port A42 includes the entire transport path R2 in the Y direction in the drawing, and it is desirable that the formation width W42 in the Y direction be larger than the transport width LY.

[0129] Therefore, by the air supply process of supplying the air supply gas G2 from the air supply port A42 of the expanded air supply mechanism 42, the air supply gas G2 is supplied as a downflow gas to a relatively wide area within the surface treatment chamber 51. In this specification, the term "downflow gas" refers to gas in which the air flow in the -Z direction is intentionally increased.

[0130] The exhaust mechanism 31 is positioned below (-Z direction) the transport stage 2 moving along the transport path R2, has an exhaust port A31 in an area overlapping with the transport path R2 when viewed in a plane, takes in processing liquid mist gas 22 from the exhaust port A31, and performs an exhaust process of exhausting the taken in processing liquid mist gas 22 to the outside of the surface treatment chamber 51.

[0131] By creating two air flows through the air supply process of the expanded air supply mechanism 42 and the exhaust process of the exhaust mechanism 31, a processing space gas flow F51 (flow velocity V4) directed downward (in the -Z direction) can be formed within the surface treatment chamber 51.

[0132] The gas supply process of the expanded gas supply mechanism 42 adds an intentional downward flow of the supply gas G2 over a relatively wide area that encompasses the entire surface of the substrate 1. As a result, the flow velocity V4 of the processing space gas flow F51 in the substrate surface treatment device 104 is faster than the flow velocities V1 and V3 of the processing space gas flow F51 in the first and third embodiments.

[0133] 12 and 13, the ultrasonic atomizer 11 and the mist supply pipe 12 are shown schematically, and the arrangement of the ultrasonic atomizer 11 and the mist supply pipe 12 shown in FIGS. 12 and 13 does not necessarily reflect the actual arrangement.

[0134] In the substrate surface treatment device 104 of embodiment 4, an expanded air supply mechanism 42 is provided above the mist ejection section 21 and supplies a relatively large amount of air supply gas G2 downward (in the -Z direction) from the air supply port A42, and the exhaust mechanism 31 is positioned below the conveying path R2.

[0135] The exhaust mechanism 31 of the substrate surface treatment device 104 of the fourth embodiment has an exhaust port A31 in an area overlapping with the transfer path R2 in a plan view. Therefore, when the exhaust mechanism 31 performs an exhaust process, takes in the treatment liquid mist gas 22 from the exhaust port A31, and exhausts it to the outside of the surface treatment chamber 51, a mist gas flow path 22e is formed that includes the area near the substrate surface.

[0136] As a result, the substrate surface treatment device 104 of embodiment 4, like the substrate surface treatment device 101 of embodiment 1, can increase the amount of treatment liquid mist used on the surface of the substrate 1, thereby improving the utilization efficiency of the treatment liquid mist on the surface of the substrate 1.

[0137] In addition, since the substrate surface treatment apparatus 104 of the fourth embodiment further includes the expanded air supply mechanism 42, the supply process of the supply gas G2 by the expanded air supply mechanism 42 and the exhaust process of the treatment liquid mist gas 22 by the exhaust mechanism 31 are performed in parallel, similar to the third embodiment. Therefore, the substrate surface treatment apparatus 104 of the fourth embodiment can increase the exhaust speed of the treatment liquid mist gas 22 flowing through the mist gas flow path 22e, similar to the third embodiment.

[0138] Furthermore, in the substrate surface treatment device 104 of embodiment 4, the supply gas G2 produced by the supply process of the expanded air supply mechanism 42 having the relatively large area air supply port A42 is supplied as downflow gas, so that the flow velocity V4 of the downward processing space gas flow F51 can be intentionally increased.

[0139] Therefore, the substrate surface treatment device 104 of embodiment 4 can increase the exhaust speed of the treatment liquid mist gas 22 flowing through the mist gas circulation path 22e compared to the exhaust speed of the treatment liquid mist gas 22 flowing through the mist gas circulation path 22d of embodiment 3, thereby improving the utilization efficiency of the treatment liquid mist on the surface of the substrate 1 more than in embodiment 3.

[0140] As mentioned above, it is desirable to set the exhaust speed high within a range that does not exceed the upper limit of the exhaust speed.

[0141] <Other> In the above-described embodiment, the treatment liquid mist is generated using the ultrasonic atomizer 11, but the treatment liquid mist may be generated using an atomizer other than the ultrasonic atomizer 11. By using an atomizer other than the ultrasonic atomizer 11 and configuring the substrate surface treatment device in the same manner as in embodiments 1 to 4, the utilization efficiency of the treatment liquid mist on the surface of the substrate 1 can be improved.

[0142] Although the present disclosure has been described in detail, the above description is illustrative in all respects and does not limit the present disclosure to the above. It is understood that countless variations not illustrated can be envisioned without departing from the scope of the present disclosure. [Explanation of symbols]

[0143] 1 Base material 2, 2B, 2C Transfer stage 11 Ultrasonic atomizer 21 Mist jetting section 31~33 Exhaust mechanism 41 Air supply mechanism 42 Expansion air supply mechanism 101, 102, 102B, 103, 104, 200 Substrate surface treatment equipment A31~A33 exhaust port A41,A42 Air supply port

Claims

1. A substrate surface treatment device for treating a surface of a substrate having a front surface and a back surface, a transfer stage that directly places the back surface of the substrate on a placement surface and moves to transfer the substrate; a mist gas supply mechanism that supplies a treatment liquid mist gas toward the surface of the substrate being transported, an area in which the transfer stage moves is defined as a transfer path, and the treatment liquid mist gas includes a treatment liquid mist obtained by misting the treatment liquid; The substrate surface treatment device comprises: an exhaust mechanism having an exhaust port in an area overlapping with the transport path in a plan view, the exhaust mechanism performing an exhaust process of exhausting the treatment liquid mist gas from the exhaust port; The mist gas supply mechanism includes: an ultrasonic atomizer that applies ultrasonic vibrations to the treatment liquid to generate the treatment liquid mist and propagates the treatment liquid mist gas containing the treatment liquid mist through a mist supply pipe; a mist ejection unit that receives the treatment liquid mist gas through the mist supply pipe and ejects the treatment liquid mist gas toward the transfer path, the exhaust mechanism is provided within the transfer stage, the exhaust port includes a plurality of exhaust ports provided on the mounting surface of the transfer stage, At least a portion of the plurality of exhaust ports are arranged so as not to overlap with the base material placement area. Substrate surface treatment equipment.

2. The substrate surface treatment device according to claim 1, the mist ejection unit is disposed above the transport path, the exhaust mechanism is disposed within the transport path or below the transport path; Substrate surface treatment equipment.

3. The substrate surface treatment device according to claim 1 or 2, the placement surface of the transfer stage has a substrate placement area for placing the substrate; the plurality of exhaust ports are all arranged so as not to overlap with the substrate placement area; Substrate surface treatment equipment.

4. The substrate surface treatment device according to claim 1 or 2, the placement surface of the transfer stage has a substrate placement area for placing the substrate; the plurality of exhaust ports are arranged in a matrix, and some of the plurality of exhaust ports are arranged without overlapping with the base material placement region. Substrate surface treatment equipment.

5. A substrate surface treatment device for treating the surface of a substrate having a front surface and a back surface, a transfer stage that places the back surface of the substrate on a placement surface and moves to transfer the substrate; a mist gas supply mechanism that supplies a treatment liquid mist gas toward the surface of the substrate being transported, an area in which the transfer stage moves is defined as a transfer path, and the treatment liquid mist gas includes a treatment liquid mist obtained by misting the treatment liquid; The substrate surface treatment device comprises: an exhaust mechanism having an exhaust port in an area overlapping with the transport path in a plan view, the exhaust mechanism performing an exhaust process of exhausting the treatment liquid mist gas from the exhaust port; The mist gas supply mechanism includes: an ultrasonic atomizer that applies ultrasonic vibrations to the treatment liquid to generate the treatment liquid mist and propagates the treatment liquid mist gas containing the treatment liquid mist through a mist supply pipe; a mist ejection unit that receives the treatment liquid mist gas through the mist supply pipe and ejects the treatment liquid mist gas toward the transfer path, the mist ejection unit is disposed above the transport path, the exhaust mechanism is disposed within the transport path or below the transport path, The apparatus further includes an air supply mechanism that is provided above the mist ejection portion and that supplies air supply gas downward from an air supply port, the exhaust mechanism is disposed below the transport path, the air intake mechanism includes an expanded air intake mechanism; the air supply port of the expansion air supply mechanism overlaps with the transport path in a plan view and has a formation area larger than an area of ​​the transport stage; Substrate surface treatment equipment.

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