Reconfigurable metasurface and control method therefor, reconfigurable antenna, and base station

Abstract

A reconfigurable metasurface and a control method therefor, a reconfigurable antenna, and a base station. The reconfigurable metasurface comprises at least one layer of reconfigurable metasurface structure. The reconfigurable metasurface structure comprises: a dielectric layer; a plurality of first strip electrodes, which are arranged in a first direction and extend in a second direction, and a plurality of second strip electrodes, which are arranged in the second direction and extend in the first direction, wherein the plurality of first strip electrodes and the plurality of second strip electrodes are located on two sides of the dielectric layer, and in the second direction and in the first direction, each first strip electrode and each second strip electrode are respectively divided into a plurality of continuous first electrode units and a plurality of continuous second electrode units, the first electrode unit and the second electrode unit which are overlapped in a vertical manner constitute a metasurface unit, and in an overlapped area, the first electrode unit and the second electrode unit have slits extending in different directions; and a variable-capacitance device, which is electrically connected between the first electrode unit and the second electrode unit, and is configured to change the phase of the metasurface unit.

Description

A reconfigurable metasurface and control method thereof, reconfigurable antenna and base station Technical Field

[0001] The present disclosure relates to the field of microwave and wireless communication technology, and in particular to a reconfigurable metasurface and a control method thereof, a reconfigurable antenna, and a base station. Background Art

[0002] The beam width of a base station antenna is an important parameter of the base station antenna.

[0003] In the field of mobile communications, overlapping interference may occur in the coverage areas of multiple base station antennas, which reduces the user experience at the edge of the coverage cell.

[0004] Since the locations of existing antenna base stations are fixed, addressing overlapping coverage requires using antennas with different wavelengths. This increases antenna procurement and installation costs, as well as the difficulty of layout and installation.

[0005] Related technologies can utilize reconfigurable metasurfaces to actively adjust the antenna beamwidth without changing the original antenna design, which will greatly reduce the difficulty of antenna base station layout.

[0006] However, when existing reconfigurable metasurfaces contain a large number of metasurface units, it is usually necessary to arrange a separate control line for each metasurface unit. The more metasurface units there are, the more difficult the wiring becomes.

[0007] Summary of the Invention

[0008] The embodiments of the present disclosure provide a reconfigurable metasurface and a control method thereof, a reconfigurable antenna, and a base station to solve the above-mentioned problems existing in the prior art.

[0009] In a first aspect, to solve the above technical problems, the embodiments of the present disclosure provide a reconfigurable metasurface, comprising at least one layer of reconfigurable metasurface structure;

[0010] The reconfigurable metasurface structure comprises:

[0011] a dielectric layer, a plurality of first strip electrodes arranged along a first direction and extending in a second direction, and a plurality of second strip electrodes arranged along the second direction and extending in the first direction; the plurality of first strip electrodes and the plurality of second strip electrodes are located on both sides of the dielectric layer; in the second direction and the first direction, the first strip electrodes and the second strip electrodes are respectively divided into a plurality of continuous first electrode units and a plurality of second electrode units, the first electrode units and the second electrode units overlapping each other forming a metasurface unit, and in the overlapping area, the first electrode units and the second electrode units have slits extending in different directions;

[0012] A varactor device is electrically connected between the first electrode unit and the second electrode unit, and is used to change the phase of the metasurface unit; wherein the capacitance value of the varactor device changes with the change of the voltage loaded on the varactor device.

[0013] In one possible implementation manner, the varactor device includes:

[0014] a first sub-varactor device, disposed in the same layer as the first strip electrode and located on one side of the first strip electrode in the first direction; the first sub-varactor device is electrically connected between the first electrode unit and the second electrode unit;

[0015] The second sub-varactor device is provided in the same layer as the second strip electrode and is located on one side of the second strip electrode in the second direction; the second sub-varactor device is electrically connected between the first electrode unit and the second electrode unit.

[0016] In one possible embodiment, the dielectric layer has multiple first through holes, and the first through holes have a first electrical connection structure or a second electrical connection structure. The first electrical connection structure is connected between the first sub-varactor device and the corresponding second electrode unit, and the second electrical connection structure is connected between the second sub-varactor device and the corresponding first electrode unit.

[0017] In one possible implementation manner, the first strip electrode has a plurality of second through holes, an orthographic projection of the second electrical connection structure on the first strip electrode is located within the second through hole, and the second through hole is fixedly connected to the corresponding first electrical connection structure;

[0018] The second strip-shaped electrode has a third through hole, the orthographic projection of the first electrical connection structure on the second strip-shaped electrode is located in the third through hole, and the third through hole is fixedly connected to the corresponding second electrical connection structure.

[0019] In one possible implementation manner, the first electrical connection structure and the second electrical connection structure include:

[0020] Conductive pillars or conductive films.

[0021] In a possible implementation manner, the shape of the slit includes:

[0022] I-shape, H-shape, rectangle, or a shape formed by the intersection of the centers of at least two rectangles.

[0023] In a possible implementation manner, in an extension direction of the first electrode unit, a length of the first electrode unit is less than 1 / 4 times the wavelength of the electromagnetic wave in a preset frequency band.

[0024] In a possible implementation manner, the lengths of the first electrode unit and the second electrode unit are 0.05 to 0.1 times the wavelength of the electromagnetic wave.

[0025] In one possible implementation manner, the varactor device includes:

[0026] Varactor diode, variable capacitor.

[0027] In one possible implementation manner, when the reconfigurable metasurface includes multiple layers of the reconfigurable metasurface structure, the multiple layers of the reconfigurable metasurface structure are overlapped, and the reconfigurable metasurface further includes:

[0028] The spacer layer is located between two adjacent layers of reconfigurable metasurface structures.

[0029] In one possible implementation, the distance between the closest metal film layers in two adjacent reconfigurable metasurface structures is less than 1 / 4 to 1 / 8 of the wavelength of the electromagnetic wave corresponding to the communication frequency band.

[0030] In a possible implementation manner, the distance ranges from 0.5 mm to 10 mm.

[0031] In a second aspect, an embodiment of the present disclosure provides a control method for the reconfigurable metasurface based on the first aspect, wherein the control method includes:

[0032] Applying a first voltage less than a critical voltage to at least the metasurface units in the first region to allow electromagnetic waves in a preset frequency band to pass through the first region; wherein the reconfigurable metasurface includes at least one first region and a second region surrounding the first region;

[0033] Moreover, in the first direction or the second direction, the voltage loaded on the metasurface units pointing from the center of the first region to both sides of the center within the first region changes gradiently, so that the phase of the electromagnetic wave within the first region is distributed gradiently from the center to both sides of the center.

[0034] In a possible implementation manner, within the first region, the voltage applied to the metasurface units pointing from the center of the first region to both sides of the center changes in a gradient, including:

[0035] In the first region, the voltage loaded on the metasurface units pointing from the center to both sides of the center increases in a gradient manner, so that the phase of the electromagnetic wave in the first region increases in a gradient manner from the center to both sides of the center.

[0036] In a possible implementation manner, within the first region, the voltage applied to the metasurface units pointing from the center to both sides of the center increases in a gradient, including:

[0037] In the first direction, the voltage gradient applied to the first strip electrodes passing through the center and pointing to both sides of the center in the first region increases; the same voltage as that applied to the first strip electrodes passing through the center is applied to the second strip electrodes passing through the first region;

[0038] Alternatively, in the second direction, the voltage gradient loaded on the second strip electrodes passing through the center and pointing to both sides of the center in the first region increases; and the same voltage as that of the second strip electrodes passing through the center is loaded on the first strip electrodes passing through the first region.

[0039] In a possible implementation manner, within the first region, the voltage applied to the metasurface units pointing from the center to both sides of the center increases in a gradient, including:

[0040] In the first direction, the voltage gradient applied to the first strip electrodes passing through the center and pointing to both sides of the center in the first region increases; and a 0V voltage is applied to the second strip electrodes passing through the first region;

[0041] Alternatively, in the second direction, the voltage gradient applied to the second strip electrodes passing through the center and pointing to both sides of the center in the first region increases; and a voltage of 0 V is applied to the first strip electrodes passing through the first region.

[0042] In a possible implementation manner, a first voltage loaded on the metasurface units passing through the center is smaller than a first voltage loaded on the metasurface units passing through both sides of the center.

[0043] In a possible implementation manner, within the first region, the voltage applied to the metasurface units pointing from the center of the first region to both sides of the center changes in a gradient, including:

[0044] In the first region, the voltage loaded on the metasurface units pointing from the center to both sides of the center decreases in a gradient, so that the phase of the electromagnetic wave in the first region decreases in a gradient from the center to both sides of the center.

[0045] In a possible implementation, within the first region, the voltage applied to the metasurface units pointing from the center to both sides of the center decreases in a gradient, including:

[0046] In the first direction, the voltage gradient applied to the first strip electrodes pointing from the center to both sides of the center in the first region decreases; the same voltage as that of the first strip electrodes passing through the center is applied to the second strip electrodes passing through the first region;

[0047] Or, in the second direction, the voltage gradient loaded on the second strip electrodes pointing from the center to both sides of the center in the first region decreases; the same voltage as that of the second strip electrodes passing through the center is loaded on the first strip electrodes passing through the first region.

[0048] In a possible implementation manner, a voltage difference between the metasurface units passing through the center and the metasurface units passing through the center is smaller than the critical voltage.

[0049] A possible implementation further includes:

[0050] The voltage applied to the second region is greater than or equal to the critical voltage, so that the electromagnetic wave does not pass through the second region.

[0051] A possible implementation further includes:

[0052] The voltage applied to the second region is lower than the critical voltage, so that the electromagnetic wave passes through the second region.

[0053] In a third aspect, an embodiment of the present disclosure provides a reconfigurable antenna, including:

[0054] The reconfigurable metasurface according to the first aspect;

[0055] The antenna array corresponds to the first area in the reconfigurable metasurface, and the first area covers the antenna array and is used to change the original beamwidth of the corresponding antenna array.

[0056] In a fourth aspect, an embodiment of the present disclosure provides a base station, comprising a reconfigurable antenna as shown in the third aspect. BRIEF DESCRIPTION OF THE DRAWINGS

[0057] FIG1 is a schematic structural diagram of a reconfigurable metasurface provided by an embodiment of the present disclosure;

[0058] FIG2 is an exploded view of a reconfigurable metasurface structure provided by an embodiment of the present disclosure;

[0059] FIG3 is a top view of a reconfigurable metasurface structure provided by an embodiment of the present disclosure;

[0060] FIG4 is an exploded view of another reconfigurable metasurface structure provided by an embodiment of the present disclosure;

[0061] FIG5 is an exploded view of another reconfigurable metasurface structure provided by an embodiment of the present disclosure;

[0062] FIG6 is an exploded view of another reconfigurable metasurface structure provided by an embodiment of the present disclosure;

[0063] 7 to 9 are schematic diagrams of the shape of a slit provided in an embodiment of the present disclosure;

[0064] 10-12 are top views of overlapping gaps in a metasurface unit provided by an embodiment of the present disclosure;

[0065] FIG13 is a schematic structural diagram of a slit provided in an embodiment of the present disclosure;

[0066] FIG14 is an exploded view of another reconfigurable metasurface structure provided by an embodiment of the present disclosure;

[0067] FIG15 is a top view of another reconfigurable metasurface structure provided by an embodiment of the present disclosure;

[0068] FIG16 is a schematic cross-sectional view of a reconfigurable metasurface provided by an embodiment of the present disclosure;

[0069] FIG17 is a transmittance curve diagram of a reconfigurable metasurface provided by an embodiment of the present disclosure;

[0070] FIG18 is a diagram showing the local electric field distribution of a reconfigurable metasurface provided by an embodiment of the present disclosure;

[0071] FIG19 is a diagram showing the local magnetic field distribution of a reconfigurable metasurface provided by an embodiment of the present disclosure;

[0072] FIG20 is a frequency-phase variation curve diagram of a reconfigurable metasurface provided by an embodiment of the present disclosure;

[0073] FIG21 is a flow chart of a control method for a reconfigurable metasurface provided by an embodiment of the present disclosure;

[0074] FIG22 is a schematic diagram of area division of a reconfigurable metasurface provided by an embodiment of the present disclosure;

[0075] FIG23 is a schematic diagram of region division of another reconfigurable metasurface provided by an embodiment of the present disclosure;

[0076] FIG24 is a schematic diagram of region division of another reconfigurable metasurface provided by an embodiment of the present disclosure;

[0077] FIG25 is a comparison diagram of the transmittance of the reconfigurable metasurface provided by an embodiment of the present disclosure under different linear bias voltages;

[0078] FIG26 is a schematic diagram of region division of another reconfigurable metasurface provided by an embodiment of the present disclosure;

[0079] FIG27 is a schematic structural diagram of a reconfigurable antenna provided in an embodiment of the present disclosure;

[0080] FIG28 is a directional gain simulation diagram of a reconfigurable antenna control provided in an embodiment of the present disclosure.

[0081] Figure numerals: reconfigurable metasurface structure 1, spacer layer 2, dielectric layer 11, first strip electrode 12, second strip electrode 13, first direction X, second direction Y, varactor device 14, first sub-varactor device 141, second sub-varactor device 142, first electrical connection structure 111, second electrical connection structure 112; reconfigurable metasurface 100, antenna element 200. DETAILED DESCRIPTION

[0082] The embodiments of the present disclosure provide a reconfigurable metasurface and a control method thereof, a reconfigurable antenna, and a base station to solve the above-mentioned problems existing in the prior art.

[0083] In order to make the above-mentioned purposes, features and advantages of the present disclosure more obvious and easy to understand, the present disclosure will be further described below with reference to the accompanying drawings and examples. However, the example embodiments can be implemented in various forms and should not be understood as being limited to the embodiments set forth herein; on the contrary, these embodiments are provided to make the present disclosure more comprehensive and complete, and to fully convey the concepts of the example embodiments to those skilled in the art. The same figure marks in the figures represent the same or similar structures, and their repeated descriptions will be omitted. The words expressing position and direction described in the present disclosure are all explained using the accompanying drawings as examples, but changes can be made as needed, and all changes are included in the scope of protection of the present disclosure. The drawings of the present disclosure are only used to illustrate relative position relationships and do not represent true proportions.

[0084] It should be noted that specific details are set forth in the following description to facilitate a full understanding of the present disclosure. However, the present disclosure can be implemented in a variety of ways different from those described herein, and those skilled in the art can make similar generalizations without violating the connotation of the present disclosure. Therefore, the present disclosure is not limited to the specific embodiments disclosed below. The subsequent description of the specification is a preferred embodiment of the present disclosure, but the description is for the purpose of illustrating the general principles of the present disclosure and is not intended to limit the scope of the present disclosure. The scope of protection of the present disclosure shall be as defined by the appended claims.

[0085] The following describes in detail a reconfigurable metasurface and its control method, a reconfigurable antenna, and a base station provided by an embodiment of the present disclosure in conjunction with the accompanying drawings.

[0086] Please refer to Figures 1 to 3. Figure 1 is a schematic structural diagram of a reconfigurable metasurface provided in an embodiment of the present disclosure. Figure 2 is an exploded view of a reconfigurable metasurface structure provided in an embodiment of the present disclosure. Figure 3 is a top view of a reconfigurable metasurface structure provided in an embodiment of the present disclosure. The reconfigurable metasurface includes at least one layer of reconfigurable metasurface structure 1.

[0087] As shown in FIG2 and FIG3, the reconfigurable metasurface structure 1 includes:

[0088] A dielectric layer 11 (not shown in FIG3 ), a plurality of first strip electrodes 12 arranged along a first direction X and extending in a second direction Y, and a plurality of second strip electrodes 13 arranged along the second direction Y and extending in the first direction X; the plurality of first strip electrodes 12 and the plurality of second strip electrodes 13 are located on both sides of the dielectric layer 11; in the second direction Y and the first direction X, the first strip electrodes 12 and the second strip electrodes 13 are respectively divided into a plurality of continuous first electrode units 12a and a plurality of second electrode units 13a, and the first electrode units 12a and the second electrode units 13a overlapped above and below to form a metasurface unit 1a, and in the overlapping area, the first electrode units 12a and the second electrode units 13a have slits f extending in different directions; the first electrode units 12a and the second electrode units 13a have slits f extending in different directions; The shapes of the slits f can be the same, such as both are rectangular, and the sizes of the slits f of the same shape can be the same or different; if the shapes and sizes of the slits f in the first electrode unit 12a and the second electrode unit 13a are the same, they can be applied to devices that are symmetrical in two polarization directions (x-polarization and y-polarization), that is, they can be applied to bipolar devices; if the shapes of the slits f in the first electrode unit 12a and the second electrode unit 13a are the same but the sizes are different, such as both are rectangular, but the length and width of the rectangle can be different, it can meet the needs of special applications, such as single polarization applications, or applications requiring special asymmetric polarization; the shapes of the slits f in the first electrode unit 12a and the second electrode unit 13a can also be different, which can meet the needs of single polarization applications, or applications requiring special asymmetric polarization.

[0089] In some embodiments, the thickness of the dielectric layer 11 can be set to be 10 times the wavelength of the electromagnetic wave in the preset frequency band. -4 ~10 -3 times.

[0090] The varactor device 14 is electrically connected between the first electrode unit 12a and the second electrode unit 13a. The varactor device 14 is used to change the phase of the metasurface unit 1a. The capacitance value of the varactor device 14 changes with the voltage loaded on the varactor device 14.

[0091] When the reconfigurable metasurface includes a layer of reconfigurable metasurface structure 1, the structure of the reconfigurable metasurface refers to the structural schematic diagram of the reconfigurable metasurface structure 1 shown in Figure 2; if the reconfigurable metasurface has two layers of reconfigurable metasurface structures 1, the corresponding structure refers to Figure 1, and at this time, there is also a spacer layer 2 between the two layers of reconfigurable metasurface structures 1.

[0092] The varactor device 14 may be a varactor diode or a variable capacitor.

[0093] The length L of the first electrode unit 12a y , the length L of the second electrode unit 13a xThe metasurface unit 1a formed in this way is a metasurface unit 1a in the deep subwavelength region, which can finely adjust the phase of the electromagnetic wave and not only control the array width of the base station antenna, but also effectively switch the width of the individual arrays in the antenna base station. If the wavelength of the electromagnetic wave in the preset frequency band is λ, then L y <1 / 4λ, L x <1 / 4λ.

[0094] In some embodiments, the length of the first electrode unit 12a and the second electrode unit 13a is 0.05 to 0.1 times the wavelength of the electromagnetic wave in the preset frequency band. x <0.1λ, 0.05λ≤L y <0.1λ. In this way, even if multiple metasurface units 1a are frequency-coupled together, the wavelength can still be smaller than one wavelength. Under the condition of limited phase modulation amplitude, the phase of a single dipole beam can be finely modulated.

[0095] The reconfigurable metasurface structure 1 further includes a substrate (not shown), which can be made of glass, polymer, printed circuit board, ceramic, etc. The plurality of first strip electrodes 12, dielectric layer 11, and plurality of second strip electrodes 13 are located on the same side of the substrate.

[0096] In the embodiment provided by the present disclosure, since the metasurface unit 1a includes a first electrode unit 12a and a second electrode unit 13a that overlap each other, and the first electrode unit 12a and the second electrode unit 13a are electrically connected to a varactor device 14, the varactor diode can be used to tune the upper and lower coupling modes of the first electrode unit 12a and the second electrode unit 13a, thereby obtaining a larger phase modulation, phase and bandwidth modulation amount; the first electrode units 12a and the second electrode units 13a that overlap each other in the metasurface unit 1a are respectively components of the overlapping first strip electrodes 12 and the second strip electrodes 13, the first electrode units 12a arranged along the same straight line in the second direction Y constitute a strip electrode, and the second electrode units 13a arranged along the same straight line in the first direction X constitute a second strip electrode 13, so when applying a voltage to the varactor device 14, it can be directly applied to the first strip electrodes 12 and the second strip electrodes 13. This not only reduces the design difficulty and production cost of the metasurface unit 1a array, but also eliminates the need to arrange additional control lines for the metasurface unit 1a, reducing the difficulty and number of wiring.

[0097] Please refer to FIG4 for an exploded view of another reconfigurable metasurface structure provided by an embodiment of the present disclosure. The varactor device 14 in the reconfigurable metasurface structure 1 includes:

[0098] The first sub-varactor device 141 is provided in the same layer as the first strip electrode 12 and is located on one side of the first strip electrode 12 in the first direction X. The first sub-varactor device 141 is electrically connected between the first electrode unit 12a and the second electrode unit 13a.

[0099] The second sub-varactor device 142 is provided in the same layer as the second strip electrode 13 and is located on one side of the second strip electrode 13 in the second direction Y. The second sub-varactor device 142 is electrically connected between the first electrode unit 12 a and the second electrode unit 13 a.

[0100] In the embodiment provided by the present disclosure, by disposing the first sub-varactor device 141 and the second sub-varactor device 142 electrically connected to the first electrode unit 12a and the second electrode unit 13a on the same layer as the first strip electrode 12 and the second strip electrode 13, respectively, the capacitance of the first sub-varactor device 141 and the second sub-varactor device 142 can be made smaller than the effective voltage of the varactor device 14, thereby making the first sub-varactor device 141 and the second sub-varactor device 142 lighter and thinner.

[0101] Please refer to Figure 5 for an exploded view of another reconfigurable metasurface structure provided in an embodiment of the present disclosure. The dielectric layer 11 has a plurality of first through holes H1, and the first through holes H1 have a first electrical connection structure 111 or a second electrical connection structure 112. The first electrical connection structure 111 is connected between the first sub-varactor device 141 and the corresponding second electrode unit 13a, and the second electrical connection structure 112 is connected between the second sub-varactor device 142 and the corresponding first electrode unit 12a.

[0102] In the embodiment provided by the present disclosure, a plurality of first through holes H1 are provided in the dielectric layer 11, and a first electrical connection structure 111 or a second electrical connection structure 112 is provided in the first through holes H1. This facilitates the use of the first electrical connection structure 111 to respectively connect the first sub-varactor device 141 and the second electrode unit 13a, and the use of the second electrical connection structure 112 to respectively connect the second sub-varactor device 142 and the first electrode unit 12a.

[0103] In some embodiments, the first electrical connection structure 111 and the second electrical connection structure 112 include conductive pillars or conductive films.

[0104] 6 is an exploded view of another reconfigurable metasurface structure provided by an embodiment of the present disclosure. The first strip electrode 12 has a plurality of second through holes H2. The orthographic projections of the second electrical connection structures 112 of the first strip electrode 12 are located within the second through holes H2. The second through holes H2 are fixedly connected to the corresponding first electrical connection structures 111.

[0105] The second strip electrode 13 has a third through hole H3 . The orthographic projection of the first electrical connection structure 111 on the second strip electrode 13 is located in the third through hole H3 . The third through hole H3 is fixedly connected to the corresponding second electrical connection structure.

[0106] In the embodiment provided in the present disclosure, by setting a second through hole H2 in the first strip electrode 12 and allowing the orthographic projection of the second electrical connection structure 112 on the first strip electrode 12 to be located within the second through hole H2, it is convenient to fix the second connection structure 112 to the first strip electrode 12 through the second through hole H2, thereby improving the stability of the connection between the second electrical connection structure 112 and the first strip electrode 12; by setting a third through hole H3 in the second strip electrode 13 and allowing the orthographic projection of the first electrical connection structure 111 on the second strip electrode 13 to be located within the third through hole H3, it is convenient to fix the first electrical connection structure 111 to the second strip electrode 13 through the third through hole H3, thereby improving the stability of the connection between the first electrical connection structure 111 and the second strip electrode 13.

[0107] Please refer to FIG. 7 to FIG. 9 for schematic diagrams of the shape of a slit provided in an embodiment of the present disclosure. The shape of the slit f includes:

[0108] I-shape (as shown in FIG7 ), H-shape (as shown in FIG8 ), rectangle (as shown in FIG2 ), or a shape formed by the intersection of at least two rectangle centers (as shown in FIG9 ).

[0109] Please refer to Figures 10-12 for top views of overlapping gaps in a metasurface unit provided by an embodiment of the present disclosure. If the first electrode unit 12a and the second electrode unit 13a are I-shaped, their top view is shown in Figure 10; if the first electrode unit 12a and the second electrode unit 13a are H-shaped, their top view is shown in Figure 11; if the first electrode unit 12a and the second electrode unit 13a are rectangular, their top view is shown in Figure 3; if the first electrode unit 12a and the second electrode unit 13a are a figure formed by the intersection of the centers of at least two rectangles, their top view is shown in Figure 12.

[0110] In the embodiment provided in the present disclosure, by setting the shape of the slit f to an I-shape, an H-shape, or a figure formed by the intersection of the center positions of at least two rectangles, the flow path of the current on the first electrode unit 12a and the second electrode unit 13a can be increased, so that the super surface unit 1a can be set smaller, which facilitates fine-grained control of the phase.

[0111] Please refer to FIG13 for a schematic structural diagram of a slit provided in an embodiment of the present disclosure. When the shape of the slit f is I-shaped or H-shaped, the slit f includes:

[0112] A main slit f1 and auxiliary slits f2 located at both ends of the main slit f1;

[0113] Please refer to Figures 14 and 15. Figure 14 is an exploded view of another reconfigurable metasurface structure provided in an embodiment of the present disclosure, and Figure 15 is a top view of another reconfigurable metasurface structure provided in an embodiment of the present disclosure. The main slit f1 is located within the overlapping region of the first electrode unit 12a and the second electrode unit 13a, while the auxiliary slit f2 is located outside the overlapping region of the first electrode unit 12a and the second electrode unit 13a. The length of the main slit f1 is greater than the length of the auxiliary slit f2.

[0114] In the embodiment provided in the present disclosure, by setting the main slit f1 in the overlapping area of ​​the first electrode unit 12a and the second electrode unit 13a, and setting the auxiliary slit f2 at both ends of the main slit f1 and outside the overlapping area, the flow path of the current on the first electrode unit 12a and the second electrode unit 13a can be further improved, and the size of the super surface unit 1a can be further reduced to facilitate fine control of the phase.

[0115] Please refer to FIG. 1 and FIG. 16 for cross-sectional views of a reconfigurable metasurface provided in an embodiment of the present disclosure. When the reconfigurable metasurface includes multiple layers of reconfigurable metasurface structures 1, the multiple layers of reconfigurable metasurface structures 1 are overlapped and arranged. The reconfigurable metasurface also includes:

[0116] The spacer layer 2 is located between two adjacent layers of the reconfigurable metasurface structure 1.

[0117] Each layer of the reconfigurable metasurface structure 1 further includes a substrate 10. The first strip electrode 12 and the second strip electrode 13 in the same reconfigurable metasurface structure 1 are located on one side of the corresponding substrate 10. A spacer layer 2 is provided between each layer of the reconfigurable metasurface structure 1. The distance between the film layer where the first strip electrode 12 is located and the film layer where the second strip electrode 13 is located in two adjacent layers of the reconfigurable metasurface structure 1 (i.e., the distance between the metal film layers closest to each other in the two adjacent layers of the reconfigurable metasurface structure 1) is 1 / 8λ. <d<1 / 4λ。

[0118] In some embodiments, 0.5 mm <d<10mm。

[0119] Take the reconfigurable metasurface including two layers of reconfigurable metasurface structure 1 as an example, wherein the structure of the reconfigurable metasurface structure 1 is shown in FIG14 , the width of the first strip electrode 12 is W1, the repetition period is L y (i.e., the length of the first electrode unit 12a), the length of the main slit f1 in the first strip electrode 12 is L 1a , width is t 1a , the length of the auxiliary slit f2 is L 1b , width is t 1b The width of the second strip electrode 13 is W2, and the repetition period is L x(i.e., the length of the second electrode unit 13a), the length of the main slit f1 in the second strip electrode 13 is L 2a , width is t 2a , the length of the auxiliary slit f2 is L 2b , width is t 2b The distance d between the closest metal film layers in the two reconfigurable supersurface structures 1 is 1 mm (i.e., the distance between the metal film layer where the second strip electrode 13 in the first reconfigurable supersurface structure 1 is located and the metal film layer where the first strip electrode 12 in the second supersurface structure is located).

[0120] Among them, 0.05 <L x <0.1λ、0.05 <L y <0.1λ,L 1b <W1<P x , L 2b <W2<P y ,t 1a , t 1b , t 2a , t 2b It can be between tens of microns and 0.1 mm depending on the manufacturing process conditions.

[0121] If the preset frequency band is the 3.5 GHz communication frequency band, a reconfigurable metasurface comprising two layers of reconfigurable metasurface structures 1 is constructed near the 3.5 GHz communication frequency band. The thickness of the first strip electrode 12 and the second strip electrode 13 can be set to 3 microns, the widths W1 and W2 of the first strip electrode 12 and the second strip electrode 13 can both be 5 mm, and the repetition period L of the first strip electrode 12 and the second strip electrode 13 can be set to 5 mm. y and L x Both are 10 mm, L 1a and t 1a Take 4.5mm and 0.4mm, L 1b and t 1b Take 1.5mm and 0.4mm, L 2a and t 2a Take 4.5mm and 0.4mm, L 2b and t 2b The thickness of the dielectric layer 11 is 0.06 mm, the dielectric constant of the dielectric layer 11 is 2.85, and the loss tangent value (tanδ) is 0.03.

[0122] When electromagnetic waves in the 3-4 GHz frequency band are vertically incident on the reconfigurable metasurface using the above design, the corresponding transmittance curve is shown in Figure 17. When a voltage is applied to the first strip electrode 12 and the second strip electrode 13 in the reconfigurable metasurface so that the capacitance of the varactor device 14 corresponding to the metasurface unit 1a is 3.6 pF (equivalent series resistance is 2 Ω), the corresponding transmission curve of the reconfigurable metasurface structure 1 is shown as the dotted line in Figure 17; when a voltage is applied to the first strip electrode 12 and the second strip electrode 13 in the reconfigurable metasurface so that the capacitance of the varactor device 14 corresponding to the metasurface unit 1a is 2.8 pF (equivalent series resistance is 2 Ω), the corresponding transmission curve of the reconfigurable metasurface structure 1 is shown as the solid line in Figure 17. The two peaks on the transmittance curve in Figure 17 correspond to the electric dipole resonance mode and the magnetic dipole resonance mode, respectively. As shown in Figure 18, a local electric field distribution diagram of a reconfigurable metasurface provided by an embodiment of the present disclosure is shown. Figure 19 is a local magnetic field distribution diagram of a reconfigurable metasurface provided by an embodiment of the present disclosure. Figure 18 is a local electric field distribution diagram corresponding to when a 3.3 GHz electromagnetic wave passes through the above-mentioned reconfigurable metasurface and a voltage is applied to the first strip electrode 12 and the second strip electrode 13 of the reconfigurable metasurface so that the effective capacitance value of the varactor device 14 is 0.8 pF. Figure 19 is a local magnetic field distribution diagram corresponding to when a 3.5 GHz electromagnetic wave passes through the above-mentioned reconfigurable metasurface and a voltage is applied to the first strip electrode 12 and the second strip electrode 13 of the reconfigurable metasurface so that the effective capacitance value of the varactor device 14 is 0.8 pF.

[0123] As shown in Figure 17, electromagnetic waves have a high transmission coefficient in the 3GHz-4GHz frequency band. Furthermore, the transmission coefficient exhibits two peaks, but the transmission coefficient between the two peaks remains at a high level, ensuring high within-band flatness. High within-band flatness means that the transmittance remains stable when using varactor diodes to tune the phase shift.

[0124] In the reconfigurable metasurface structure 1, a capacitor (denoted as C0) is formed in the spatial overlap area of ​​the first electrode unit 12a and the second electrode unit 13a. The varactor device 14 (corresponding effective capacitance is denoted as Ce) is electrically connected between the first electrode unit 12a and the second electrode unit 13a. This is equivalent to C0 and Ce being connected in parallel to form a larger capacitor (C=C0+Ce). When a reverse voltage is applied across the varactor device 14 (i.e., the first electrode unit 12a and the second electrode unit 13a), the capacitance C will change. Since the resonant frequency is proportional to The resonant frequency will be moved in the high and low frequency bands, thereby changing the phase of the corresponding metasurface unit 1a.

[0125] Please refer to Figure 20 for a frequency-phase variation curve of a reconfigurable metasurface provided by an embodiment of the present disclosure. The dashed line in Figure 20 represents the frequency-phase variation curve corresponding to an effective capacitance of 3.6pF for the varactor device 14, and the solid line represents the frequency-phase variation curve corresponding to an effective capacitance of 2.8pF for the varactor device 14. The frequencies of the two peaks in the transmittance curve in Figure 17 correspond to Figure 20, which will produce a phase drop. When the voltage applied to the varactor device 14 changes, the effective capacitance value of the varactor device 14 also changes. At different frequency positions of the phase drop, there is a phase difference. The present disclosure uses this phase difference to achieve control of the oscillator beamwidth.

[0126] In Figure 16, if d < 0.5 mm, the electric vibration and magnetic vibration generated by the reconfigurable metasurface structure 1 will be too far apart in frequency, resulting in a decrease in the transmittance of electromagnetic waves in the frequency region between the electric vibration and the magnetic vibration; if d > 10 mm, the electric vibration and magnetic vibration generated by the reconfigurable metasurface structure 1 will overlap in frequency, resulting in a decrease in bandwidth, and more high-order resonance modes will appear, which is not conducive to the modulation bandwidth. Therefore, 0.5 mm <d<10mm。

[0127] In the embodiment provided in the present disclosure, by setting the distance d between the metal film layers closest to each other in two adjacent layers of the reconfigurable metasurface structure 1 to be less than 1 / 4 to 1 / 8 times the wavelength of the electromagnetic wave corresponding to the communication frequency band, the frequency range corresponding to the electric vibration and magnetic vibration generated by the reconfigurable metasurface structure 1 can have higher transmittance and flatness.

[0128] In the embodiment provided in the present disclosure, by setting the distance d between the metal film layers closest to each other in two adjacent layers of the reconfigurable metasurface structure 1 to a value range of 0.5 mm to 10 mm, the frequency range between the electric vibration and the magnetic vibration generated by the reconfigurable metasurface structure 1 can have a higher transmittance and flatness while preventing the frequencies corresponding to the electric vibration and the magnetic vibration from overlapping.

[0129] In the embodiment provided in the present disclosure, by setting the reconfigurable metasurface to a multi-layer reconfigurable metasurface structure 1 including an overlapping arrangement, the multi-layer reconfigurable metasurface structure 1 can interact with each other to form electric vibrations and magnetic vibrations respectively, and utilize the overlapping effect of the electric vibrations and magnetic vibrations of the multi-layer reconfigurable metasurface structure 1 to increase the in-band phase modulation amount and modulation bandwidth, and improve the flatness of the in-band phase modulation and the flatness of the transmission amplitude.

[0130] Assuming a -2V reverse bias is applied to the first and second strip electrodes 12, 13 in Figure 16, the effective capacitance of the varactor changes from 3.6pF to 2.8pF, and the transmission curve in the 3.5GHz band shifts from the relatively low-frequency dashed line to the relatively high-frequency solid line. If the reverse bias applied to the varactor device 14 is further increased, assuming the reverse bias is -5V, the effective capacitance of the varactor device 14 changes by 0.5pF. At this point, the transmittance in the 3.5GHz band decreases to -25dB, indicating that the varactor device 14 has achieved a shutoff effect on the transmitted wave (no transmission). If the reverse bias across the varactor diode is further increased, for example, to -10V, the varactor device 14 remains in the off state.

[0131] Utilizing this effect, the present disclosure provides a method for controlling the aforementioned reconfigurable metasurface. The structure of the reconfigurable metasurface can be referred to in the above description and will not be described in detail here. FIG21 is a flow chart of a method for controlling a reconfigurable metasurface provided in an embodiment of the present disclosure. The control method includes:

[0132] Step 210: Apply a first voltage less than a critical voltage to at least the metasurface units in the first region, so that electromagnetic waves in a preset frequency band pass through the first region; wherein the reconfigurable metasurface includes at least one first region and a second region surrounding the first region; the critical voltage is the minimum bias voltage on the varactor device when the metasurface units are in a reflective state, and electromagnetic waves cannot pass through the corresponding metasurface units when the metasurface units are in a reflective state.

[0133] Step 220: In the first direction or the second direction, the voltage loaded on the metasurface units pointing from the center of the first region to both sides of the center in the first region changes gradiently, so that the phase of the electromagnetic wave in the first region is distributed gradiently from the center to both sides of the center.

[0134] In some embodiments, within the first region, the voltage applied to the metasurface units from the center of the first region to both sides of the center changes in a gradient, including:

[0135] In the first region, the voltage applied to the metasurface units pointing toward the center increases in a gradient, causing the phase of the electromagnetic wave in the first region to increase in a gradient from the center toward the sides of the center. The second voltage applied to the metasurface units in the second region can be greater than or equal to a critical voltage, causing the second region to be reflective, or it can be less than the critical voltage, causing the second region to be transmissive.

[0136] In some embodiments, in the first region, the voltage applied to the metasurface units pointing from the center to the sides of the center increases in a gradient, which can be achieved through the following two solutions:

[0137] The first type: in the first direction, the voltage gradient applied to the first strip electrode passing through the center and pointing to both sides of the center in the first region increases; the same voltage as that of the first strip electrode passing through the center is applied to the second strip electrode passing through the first region;

[0138] The second type: in the second direction, the voltage gradient applied to the second strip electrodes passing through the center and pointing to both sides of the center in the first region increases; the first strip electrodes passing through the first region are applied with the same voltage as that of the second strip electrodes passing through the center.

[0139] Please refer to Figure 22 for a schematic diagram of the regional division of a reconfigurable metasurface provided in an embodiment of the present disclosure. Figure 22 shows only the first and second strip electrodes. Assuming a critical voltage of Vr, the absolute value of the first voltage applied to the metasurface unit in the first area A1 is less than |Vr|, making the first area A1 transmissive. The absolute value of the second voltage applied to the metasurface unit in the second area A2 is greater than or equal to |Vr|, making the second area A2 reflective.

[0140] As shown in FIG22 , in the second direction Y, the voltage loaded on the first strip electrode 12 at the center of the first area A1 is V0, the voltages loaded on the first strip electrodes 12 pointing to both sides of the center are V1 and V2, respectively, and the voltage loaded on the second strip electrodes 13 in the first area A1 is all V0. Therefore, the first voltage loaded on the metasurface unit at the center of the same metasurface unit is V0-V0=0V, and the voltages loaded on the metasurface units pointing to both sides of the center are |V1-V0|<|Vr|, |V2-V0|, respectively. <|Vr|, so that the first area A1 is in a transmissive state, and in the first direction X, the voltage loaded on the metasurface units on both sides of the center of the first area A1 in the first area A1 increases in a gradient, where |V0|<|V1|<|V2|, such as V0=V, V1=V+△V, V2=V+2△V, so that the phase of the electromagnetic wave in the first area A1 increases in a gradient from the center to both sides of the center, so that the beam passing through the first area A1 produces a focusing effect, thereby adjusting the beam width (Figure 22 corresponds to narrowing the beam). In Figure 22, the second voltage loaded on the metasurface units on the center line of the second area A2 in the second direction Y is at least V0-(V0-Vr)=Vr, and the second voltage loaded on the outermost metasurface units at both ends of the center line of the second area A2 is at most V0+Vr-(V0-Vr)=2Vr, so that the second voltage loaded on the metasurface units in the second area A2 is greater than or equal to the critical voltage, so that the second area A2 is in a reflective state.

[0141] In some embodiments, the voltage applied to the metasurface units on both sides of the center of the first region in the first region changes in a gradient, which can be achieved by:

[0142] In the first region, the voltage applied to the metasurface units pointing toward the center decreases in a gradient, causing the phase of the electromagnetic wave in the first region to decrease in a gradient from the center toward the sides. In the second region, the voltage applied to the metasurface units is greater than or equal to a critical voltage, causing the second region to be in a reflective state.

[0143] In the first region, the voltage applied to the metasurface units pointing from the center to the sides of the center decreases in a gradient, which can be achieved in the following two ways:

[0144] The first type: in the first direction, the voltage gradient applied to the first strip electrodes from the center to the two sides of the center in the first region decreases; the same voltage as that of the first strip electrodes passing through the center is applied to the second strip electrodes passing through the first region;

[0145] The second type: in the second direction, the voltage gradient applied to the second strip electrodes from the center to both sides of the center in the first region decreases; the same voltage as that applied to the second strip electrodes passing through the first region is applied to the first strip electrodes passing through the center.

[0146] Please refer to Figure 23 for a schematic diagram of area division of another reconfigurable metasurface provided in an embodiment of the present disclosure.

[0147] The voltage applied to the first strip electrodes 12 in the first area A1 is Vn. In the first direction X, the voltage applied to the second strip electrodes 13 at the center of the first area A1 is V0, and the voltages applied to the second strip electrodes 13 pointing to the sides of the center are V1 and V2, respectively, where |V0|<|V1|<|V2|. In the first direction X, the first voltage applied to the metasurface unit at the center of the first area A1 is V0-V2, and the first voltages applied to the metasurface units pointing to the sides of the center are |V1-V2|<|Vr| and V2-V2=0<|Vr|, respectively. Therefore, the first area A1 is in a transmissive state, and the first voltages from the center of the first area A1 pointing to the sides of the first area A1 decrease gradually in the first direction X, causing the transmission phase at the center of the first area A1 to be higher than the transmission phase on the sides. This causes the beam passing through the first area A1 to produce a diverging effect, thereby widening the beam of the electromagnetic wave passing through the first area A1. Since in the first direction X, the second voltage loaded on the metasurface unit at the center of the second area A2 is v2+Vr-V2=Vr, and the second voltage loaded on the metasurface units at the farthest ends on both sides of the center is V2+Vr-(V2-Vr)=2Vr, therefore, the second voltage loaded on the metasurface units in the second area A2 is greater than or equal to the critical voltage, so that the second area A2 is in a reflective state.

[0148] In the embodiment provided in the present disclosure, a first voltage less than a critical voltage is applied to at least the metasurface units in the first area, so that electromagnetic waves in a preset frequency band pass through the first area; wherein the reconfigurable metasurface includes at least one first area and a second area surrounding the first area; and, in the first direction or the second direction, the voltage loaded on the metasurface units pointing from the center of the first area to both sides of the center in the first area changes gradiently, so that the phase of the electromagnetic wave in the first area is distributed gradiently from the center to both sides of the center, so that the beam passing through the first area produces a focusing effect or a diverging effect, thereby achieving the technical effect of adjusting the beam width.

[0149] In other embodiments, the voltage applied to the metasurface units on both sides of the center of the first region in the first region changes in a gradient, which can also be achieved in the following manner:

[0150] In the first region, the voltage applied to the metasurface units pointing toward the center increases in a gradient, causing the phase of the electromagnetic wave in the first region to increase in a gradient from the center toward the sides. In the second region, the voltage applied to the metasurface units is less than the critical voltage, causing the second region to be transmissive. At this point, both the first and second regions are in a transmissive state.

[0151] In the first region, the voltage applied to the metasurface units pointing from the center to the sides of the center increases in a gradient, which can be achieved through the following two schemes:

[0152] The first type: in the first direction, the voltage gradient applied to the first strip electrode passing through the center and pointing to both sides of the center in the first region increases; and a 0V voltage is applied to the second strip electrode passing through the first region;

[0153] The second solution: in the second direction, the voltage gradient applied to the second strip electrodes passing through the center and pointing to both sides of the center in the first region increases; and a 0V voltage is applied to the first strip electrodes passing through the first region.

[0154] The first voltage loaded on the metasurface unit passing through the center is smaller than the first voltage loaded on the metasurface units passing through both sides of the center.

[0155] Taking the first direction as an example, please refer to Figure 24 for a schematic diagram of area division of another reconfigurable metasurface provided in an embodiment of the present disclosure.

[0156] In the first direction X, the voltage loaded on the first strip electrode 12 at the center in the first area A1 is V0, the voltages loaded on the first strip electrodes 12 pointing to both sides of the center are V1 and V2 respectively, and the voltage loaded on the first strip electrode 12 passing only through the second area A2 is V2; the voltage loaded on the second strip electrodes 13 passing through the first area A1 is V0, and the voltage loaded on the second strip electrodes 13 passing only through the second area A2 is V0-V2, wherein |V0|<|V1|<|V2|<|Vr|; therefore, in the first direction X, the first voltage loaded on the metasurface unit passing through the center in the first area A1 is V0-0=V0, and the first voltages loaded on the metasurface units on both sides of the center are V1 and V2, and V0, V1, and V2 increase gradiently, so that the electromagnetic wave can not only pass through the first area A1, but also causes the first voltage loaded on the metasurface unit in the first area A1 to increase gradiently, thereby causing the phase in the first area A1 to increase gradiently, thereby achieving the technical effect of narrowing the beam.

[0157] In the first direction X, the maximum second voltage loaded on the metasurface unit passing through the center line in the second area A2 is V0-(V0-V2)=V2, and the minimum second voltage loaded on the metasurface unit at the farthest ends on both sides of the center line is V2-(V0-V2)=2V2-V0. The second area A2 is also in a transmissive state, so the entire reconfigurable metasurface is in a transmissive state, and the second voltage loaded on the metasurface unit in the second area A2 is greater than |V2|.

[0158] The solution in the second direction Y is similar to the solution in the first direction X, so it will not be described in detail.

[0159] Please refer to Table 1 for a table showing the relationship between the reverse bias voltage applied to a varactor device and the capacitance value provided in an embodiment of the present disclosure.

[0160] Table 1

[0161] Table 1 shows that as the reverse bias voltage of the varactor increases, its capacitance decreases, but the change does not remain linear. Instead, the capacitance changes more slowly as the reverse bias voltage increases. This results in the transmittance of the reconfigurable metasurface not shifting linearly with increasing reverse bias voltage, but rather tending to stabilize. Figure 25 shows a comparison of the transmittance of the reconfigurable metasurface under different linear bias voltages, as shown in the examples of the present disclosure.

[0162] According to the above characteristics, when a voltage is applied to the second strip electrode of the reconfigurable metasurface provided in the embodiment of the present disclosure, the entire reconfigurable metasurface can maintain a high transmittance at 3.5 GHz, but phase modulation only occurs in the first region.

[0163] As shown in Figure 24, the voltage value of V0 needs to be in an area where the capacitance value of the varactor device does not change so drastically as the applied voltage increases, while the voltage value of V2 requires the varactor device to be stable in the area as the voltage increases. According to a varactor device corresponding to Table 1, V0 greater than -8V is a reasonable choice. Therefore, V0 can be made to be -8V, V2 = -16V, and the voltage V1 applied to the electrode line between the V0 column electrode and the V2 column electrode is between V0 and V2. Since the absolute value of the second voltage loaded on the metasurface unit in the second area A2 is at least |V2|, the capacitance values ​​of the varactor devices corresponding to the metasurface units in the second area A2 are roughly the same, so that although the second area A2 is in a transmissive state, phase modulation does not occur.

[0164] It should be understood that, since the varactor device is connected between the first strip electrode and the second strip electrode in the metasurface unit, the voltage applied to the metasurface unit is the reverse bias voltage applied to the varactor device.

[0165] The reconfigurable metasurface unit may include a single first region as described in the above scheme, or may include multiple first regions, which may be arranged in an array. FIG26 shows another schematic diagram of region division for a reconfigurable metasurface according to an embodiment of the present disclosure. The control method for each of the multiple first regions is consistent with the control method for the aforementioned single first region, so it will not be repeated here.

[0166] By having each of the multiple first areas cover an antenna array, the beamwidth of each antenna array can be adjusted. This allows the beamwidth of an antenna comprising multiple antenna arrays to be adjusted. The size of the first area can be set based on the size of the antenna array, typically needing to be slightly larger than the antenna array.

[0167] Based on the same inventive concept, an embodiment of the present disclosure provides a reconfigurable antenna. FIG27 is a schematic structural diagram of a reconfigurable antenna provided in an embodiment of the present disclosure. The reconfigurable antenna includes:

[0168] The reconfigurable metasurface 100 as described above;

[0169] The antenna element 200 corresponds to the first area A1 in the reconfigurable metasurface. The first area A1 covers the antenna element 200 and is used to change the original beamwidth of the corresponding antenna element 200.

[0170] By making the phase in the center of the first region smaller than the phases on either side, the antenna beam can be narrowed while increasing the gain of a single antenna element. Figure 28 shows a directional gain simulation diagram of a reconfigurable antenna according to an embodiment of the present disclosure. The different curves in Figure 28 correspond to the changes in beam width of a 2.6 GHz electromagnetic wave generated by the antenna element 100 after it passes through the reconfigurable metasurface 100, when different phase gradients are applied in the first region A1 of the reconfigurable metasurface 100. The phase difference in the figure refers to the phase difference between the edge of the first region A1 and the center of the first region A1 under a given phase gradient. Conversely, the beam can be controlled to widen, which will not be further described.

[0171] Typically, the size of the first region is chosen to be larger than the size of each antenna element in the reconfigurable antenna. Due to the limited height of the reconfigurable antenna, the reconfigurable metasurface is typically placed just above the antenna element. As long as the first region is slightly larger than the antenna element, the wavefront phase of the electromagnetic wave radiated by the antenna element can be fully controlled.

[0172] In the embodiment provided in the present disclosure, by allowing the reconfigurable metasurface to be attached to the original antenna and allowing the first area of ​​the reconfigurable metasurface to cover the antenna array in the original antenna, the bandwidth of the antenna array can be adjusted to obtain a reconfigurable antenna. In this way, there is no need to re-purchase the reconfigurable antenna, which can effectively reduce costs, and there is no need to rearrange the antennas on the base station, reducing the difficulty of antenna arrangement.

[0173] Based on the same inventive concept, an embodiment of the present disclosure further provides a base station, including the reconfigurable antenna shown above.

[0174] Although the preferred embodiments of the present disclosure have been described, those skilled in the art may make additional changes and modifications to these embodiments once they have learned the basic creative concepts. Therefore, the appended claims are intended to be interpreted as including the preferred embodiments and all changes and modifications that fall within the scope of the present disclosure.

[0175] Obviously, those skilled in the art may make various changes and modifications to the present disclosure without departing from the spirit and scope of the present disclosure. Thus, if these modifications and variations of the present disclosure fall within the scope of the claims of the present disclosure and their equivalents, the present disclosure is intended to include these modifications and variations.

Claims

1. A reconfigurable metasurface, wherein, it includes at least one layer of reconfigurable metasurface structure; The reconfigurable metasurface structure includes: a dielectric layer, a plurality of first strip electrodes arranged along a first direction and extending along a second direction, and a plurality of second strip electrodes arranged along the second direction and extending along the first direction; the plurality of first strip electrodes and the plurality of second strip electrodes are located on two sides of the dielectric layer; in the second direction and the first direction, the first strip electrodes and the second strip electrodes are respectively divided into a plurality of continuous first electrode units and a plurality of second electrode units, and the overlapping first electrode unit and second electrode unit form a metasurface unit, and in the overlapping area, the first electrode unit and the second electrode unit have slits with different extending directions; a varactor device, electrically connected between the first electrode unit and the second electrode unit, and the varactor device is used to change the phase of the metasurface unit; wherein, the capacitance value of the varactor device changes with the change of the voltage applied to the varactor device.

2. The reconfigurable metasurface according to claim 1, wherein, the varactor device includes: a first sub-varactor device, arranged on the same layer as the first strip electrode and located on one side of the first strip electrode in the first direction; the first sub-varactor device is electrically connected between the first electrode unit and the second electrode unit; a second sub-varactor device, arranged on the same layer as the second strip electrode and located on one side of the second strip electrode in the second direction; the second sub-varactor device is electrically connected between the first electrode unit and the second electrode unit.

3. The reconfigurable metasurface according to claim 2, wherein, the dielectric layer has a plurality of first through holes, and the first through holes have a first electrical connection structure or a second electrical connection structure, the first electrical connection structure is connected between the first sub-varactor device and the corresponding second electrode unit, and the second electrical connection structure is connected between the second sub-varactor device and the corresponding first electrode unit.

4. The reconfigurable metasurface according to claim 3, wherein, the first strip electrode has a plurality of second through holes, the orthographic projection of the second electrical connection structure on the first strip electrode is located in the second through holes, and the second through holes are fixedly connected to the corresponding first electrical connection structure; the second strip electrode has a third through hole, the orthographic projection of the first electrical connection structure on the second strip electrode is located in the third through hole, and the third through hole is fixedly connected to the corresponding second electrical connection structure.

5. The reconfigurable metasurface according to claim 3 or 4, wherein, the first electrical connection structure and the second electrical connection structure include: a conductive post or a conductive film.

6. The reconfigurable metasurface according to any one of claims 1-5, wherein, the shape of the slit includes: I-shaped, H-shaped, rectangular, a figure formed by the intersection of the central positions of at least two rectangles.

7. The reconfigurable metasurface according to any one of claims 1-6, wherein, In the extending direction of the first electrode unit, the length of the first electrode unit is less than 1 / 4 times the wavelength of electromagnetic waves in a preset frequency band.

8. The reconfigurable metasurface according to claim 7, wherein, the lengths of the first electrode unit and the second electrode unit are 0.05 to 0.1 times the wavelength of the electromagnetic waves.

9. The reconfigurable metasurface according to any one of claims 1-8, wherein, the varactor device includes: varactor diodes, variable capacitors.

10. The reconfigurable metasurface according to any one of claims 1-9, wherein, when the reconfigurable metasurface includes multiple layers of the reconfigurable metasurface structure, the multiple layers of the reconfigurable metasurface structure are overlapped, and the reconfigurable metasurface further includes: a spacer layer located between adjacent two layers of the reconfigurable metasurface structure.

11. The reconfigurable metasurface according to claim 10, wherein, the distance between the closest metal film layers in adjacent two layers of the reconfigurable metasurface structure is less than 1 / 4 to 1 / 8 times the wavelength of the electromagnetic waves corresponding to the communication frequency band.

12. The reconfigurable metasurface according to claim 11, wherein, the value range of the distance is 0.5 mm to 10 mm.

13. A control method for a reconfigurable metasurface according to any one of claims 1-12, wherein, the control method includes: applying a first voltage less than the critical voltage to at least the metasurface units in a first region to allow electromagnetic waves in a preset frequency band to pass through the first region; wherein, the reconfigurable metasurface includes at least one first region and a second region surrounding the first region; and, in a first direction or a second direction, the voltages applied to the metasurface units in the first region from the center of the first region to both sides of the center change in a gradient manner, so that the phase of the electromagnetic waves in the first region is distributed in a gradient manner from the center to both sides of the center.

14. The control method according to claim 13, wherein, the voltages applied to the metasurface units in the first region from the center of the first region to both sides of the center change in a gradient manner, including: in the first region, the voltages applied to the metasurface units from the center to both sides of the center increase in a gradient manner, so that the phase of the electromagnetic waves in the first region increases in a gradient manner from the center to both sides of the center.

15. The control method according to claim 14, wherein, the voltages applied to the metasurface units in the first region from the center of the first region to both sides of the center increase in a gradient manner, including: in the first direction, the voltage gradient applied to the first strip-shaped electrode passing through the center of the first region and pointing to both sides of the center increases; on the second strip-shaped electrode passing through the first region, the same voltage as the first strip-shaped electrode passing through the center is applied; or, in the second direction, the voltage gradient applied to the second strip-shaped electrode passing through the center of the first region and pointing to both sides of the center increases; on the first strip-shaped electrode passing through the first region, the same voltage as the second strip-shaped electrode passing through the center is applied.

16. The control method according to claim 14, wherein, In the first region, the voltages loaded on the metasurface units pointing from the center to both sides of the center increase in a gradient, including: In the first direction, the voltage gradient loaded on the first strip electrode passing through the center in the first region and pointing to both sides of the center increases; a 0V voltage is loaded on the second strip electrode passing through the first region. Or, in the second direction, the voltage gradient loaded on the second strip electrode passing through the center in the first region and pointing to both sides of the center increases; a 0V voltage is loaded on the first strip electrode passing through the first region.

17. The control method according to claim 16, wherein, the first voltage loaded on the metasurface unit passing through the center is less than the first voltage loaded on the metasurface units passing through both sides of the center.

18. The control method according to claim 13, wherein, in the first region, the voltages loaded on the metasurface units pointing from the center of the first region to both sides of the center change in a gradient, including: In the first region, the voltages loaded on the metasurface units pointing from the center to both sides of the center decrease in a gradient, so that the phase of the electromagnetic wave in the first region decreases in a gradient from the center to both sides of the center.

19. The control method according to claim 18, wherein, in the first region, the voltages loaded on the metasurface units pointing from the center to both sides of the center decrease in a gradient, including: In the first direction, the voltage gradient loaded on the first strip electrode passing through the center in the first region and pointing to both sides of the center decreases; the same voltage as that of the first strip electrode passing through both sides of the center is loaded on the second strip electrode passing through the first region. Or, in the second direction, the voltage gradient loaded on the second strip electrode passing through the center in the first region and pointing to both sides of the center decreases; the same voltage as that of the second strip electrode passing through both sides of the center is loaded on the first strip electrode passing through the first region.

20. The control method according to claim 15 or 19, wherein, the voltage difference between the metasurface units passing through both sides of the center and the metasurface unit passing through the center is less than the critical voltage.

21. The control method according to any one of claims 14, 15, and 18 - 20, wherein, further includes: A voltage greater than or equal to the critical voltage is loaded in the second region, so that the electromagnetic wave does not penetrate the second region.

22. The control method according to claim 14, 16, or 17, wherein, further includes: A voltage less than the critical voltage is loaded in the second region, so that the electromagnetic wave penetrates the second region.

23. A reconfigurable antenna, wherein, includes: The reconfigurable metasurface according to any one of claims 1 - 12; An antenna element, corresponding to the first region in the reconfigurable metasurface, the first region covering the antenna element and used to change the original wave width of the corresponding antenna element.

24. A base station, wherein, includes the reconfigurable antenna according to claim 23.

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