High-frequency communication device and high-frequency communication module

Abstract

Provided is a high-frequency communication device capable of performing excellent non-contact communication despite having a structure suitable for miniaturization. This high-frequency communication device is provided with: one first wiring layer that is set to a first potential; one or more spin torque oscillation elements that are provided in the first wiring layer; and one second wiring layer that is positioned on the opposite side to the first wiring layer across the one or more spin torque oscillation elements in a first direction, has one or more openings provided in a part of a region that overlaps each of the one or more spin torque oscillation elements in the first direction, and is set to a second potential different from the first potential.

Description

High frequency communication device and high frequency communication module

[0001] The present disclosure relates to a high-frequency communication device and a high-frequency communication module that perform contactless communication.

[0002] To date, a known technology that enables contactless communication between two chips is the ThruChip Interface (TCI), which uses a microwave transmitter and an antenna coil for contactless communication (see, for example, Non-Patent Document 1). TCI is a wireless inter-chip connection technology that transmits information using a magnetic field generated by passing a current through a coil provided on the chip.

[0003] Journal of the Japan Institute of Electronics Packaging, Vol. 15, No. 4 (2012), pp. 231-235 (URL: https: / / www.jstage.jst.go.jp / article / jiep / 15 / 4 / 15_231 / _pdf)

[0004] Recently, with the increasing integration of electronic devices, there is a demand for miniaturization of communication devices capable of such contactless communication.

[0005] Therefore, there is a demand for a high-frequency communication device that can perform good non-contact communication while having a structure suitable for miniaturization.

[0006] A high-frequency communication device according to an embodiment of the present disclosure includes a first wiring layer set to a first potential, one or more spin-torque oscillators provided in the first wiring layer, and a second wiring layer located on the opposite side of the first wiring layer in a first direction across the one or more spin-torque oscillators. The second wiring layer has one or more openings provided in portions overlapping with the one or more spin-torque oscillators in the first direction, and is set to a second potential different from the first potential.

[0007] In one embodiment of the high-frequency communication device of the present disclosure, one or more spin torque oscillator elements are provided between the first wiring layer and the second wiring layer, so that, despite the simple configuration, high-frequency signals can be generated and transmitted to an external device in a contactless manner, or high-frequency signals can be received from an external device in a contactless manner.

[0008] FIG. 1A is a cross-sectional view illustrating an example configuration of a high-frequency communication module according to a first embodiment of the present disclosure. FIG. 1B is a plan view illustrating the high-frequency communication module illustrated in FIG. 1A as viewed in a first direction. FIG. 2A is a cross-sectional view illustrating a step of a method for manufacturing the high-frequency communication module illustrated in FIG. 1A. FIG. 2B is a cross-sectional view illustrating a step subsequent to FIG. 2A. FIG. 2C is a cross-sectional view illustrating a step subsequent to FIG. 2B. FIG. 2D is a cross-sectional view illustrating a step subsequent to FIG. 2C. FIG. 2E is a cross-sectional view illustrating a step subsequent to FIG. 2D. FIG. 3A is a cross-sectional view illustrating an example configuration of a high-frequency communication module according to a first modification of the first embodiment. FIG. 3B is a plan view illustrating the high-frequency communication module illustrated in FIG. 3A as viewed in a first direction. FIG. 4A is a cross-sectional view illustrating an example configuration of a high-frequency communication module according to a second embodiment of the present disclosure. FIG. 4B is a plan view illustrating the high-frequency communication module illustrated in FIG. 4A as viewed in a first direction. FIG. 5 is a cross-sectional view illustrating an example configuration of a high-frequency communication module according to a third embodiment of the present disclosure. Fig. 6 is a cross-sectional view illustrating a configuration example of a high-frequency communication module according to a fourth embodiment of the present disclosure, Fig. 7 is a cross-sectional view illustrating a configuration example of a high-frequency communication module according to a fifth embodiment of the present disclosure, and Fig. 8 is a cross-sectional view illustrating a configuration example of a high-frequency communication module according to a sixth embodiment of the present disclosure.

[0009] Hereinafter, embodiments of the present disclosure will be described in detail with reference to the drawings. The description will be made in the following order: 0. Background 1. First embodiment 2. Second embodiment 3. Third embodiment 4. Fourth embodiment 5. Fifth embodiment 6. Sixth embodiment 7. Other modified examples

[0010] <0. Background> As mentioned above, TCI is known as a technology that enables contactless communication between two chips. However, a communication device using TCI requires a coil, which hinders efforts to reduce the device's footprint. Furthermore, the need to ensure a gap of approximately several tens of micrometers between the two coils for contactless communication may hinder efforts to reduce the thickness of a communication device using TCI.

[0011] Therefore, the present applicant has conducted extensive research into a high-frequency communication device and a high-frequency communication module that are capable of high-speed non-contact communication while having a configuration that is more suitable for miniaturization, and has finally achieved the result.

[0012] 1. First Embodiment [1.1 Configuration] Fig. 1A is a cross-sectional view illustrating an example configuration of a high-frequency communication module 1 according to a first embodiment of the present disclosure. Fig. 1B is a plan view illustrating an example plan configuration of the high-frequency communication module 1. However, in Fig. 1B, to ensure visibility, some components illustrated in Fig. 1A are omitted. Fig. 1A also illustrates a cross section taken along the II cutting line illustrated in Fig. 1B as viewed in the direction of the arrows. Note that the high-frequency communication module 1 corresponds to a specific example of a "high-frequency communication module" according to one embodiment of the present disclosure.

[0013] The high-frequency communication module 1 has a structure in which, for example, a high-frequency communication device 10 and a high-frequency communication device 20 are combined. As shown in FIG. 1A , the high-frequency communication device 10 and the high-frequency communication device 20 are each supported by, for example, a support 100, and the relative positions of the high-frequency communication device 10 and the high-frequency communication device 20 are fixed. In the high-frequency communication module 1, the relative positions of the high-frequency communication device 10 and the high-frequency communication device 20 are fixed so that, for example, a surface 11FS (described below) of the high-frequency communication device 10 and a surface 21FS (described below) of the high-frequency communication device 20 face each other while being spaced apart from each other. Note that the high-frequency communication module of the present disclosure is not limited to the configuration shown in FIG. 1A , and may have a structure in which, for example, the high-frequency communication device 10 and the high-frequency communication device 20 are bonded via an adhesive layer. The high-frequency communication devices 10 and 20 are each a high-frequency transmitting device that transmits high-frequency signals and a high-frequency receiving device that receives high-frequency signals. That is, for example, when high-frequency communication device 10 transmits a high-frequency signal, high-frequency communication device 20 receives the high-frequency signal, and when high-frequency communication device 20 transmits a high-frequency signal, high-frequency communication device 10 receives the high-frequency signal. Note that high-frequency communication device 10 corresponds to a specific example of a "high-frequency communication device" or a "first high-frequency communication device" according to one embodiment of the present disclosure. High-frequency communication device 20 corresponds to a specific example of a "high-frequency communication device" or a "second high-frequency communication device" according to one embodiment of the present disclosure.

[0014] (High-Frequency Communication Device 10 ) The high-frequency communication device 10 includes, for example, a base 11 , a terminal 12 , a signal line 13 , a spin torque oscillator 14 , and a conductive layer 15 .

[0015] The base 11 has a surface 11FS opposite the surface 21FS of the high-frequency communication device 20. The base 11 also has a back surface 11BS opposite the surface 11FS. The base 11 includes a substrate 11A and an insulating film 11B covering the surface of the substrate 11A. In the configuration example of FIG. 1A , the surface of the insulating film 11B coincides with the surface 11FS of the base 11, and the back surface of the substrate 11A coincides with the back surface 11BS of the base 11. The substrate 11A is, for example, an electrically insulating substrate. Examples of materials that can be used for the substrate 11A include resin materials such as PI (polyimide), PET (polyethylene terephthalate), PC (polycarbonate), PEN (polyethylene naphthalate), PEI (polyetherimide), and fluororesin. Alternatively, the substrate 11A may be a metal-based substrate such as aluminum (Al) with an insulating resin layer such as polyimide or epoxy-based resin formed on its surface. Furthermore, the substrate 11A may be made of a glass-containing resin, such as a glass epoxy resin (e.g., FR4) or a glass composite resin (e.g., CEM3). Terminals 12 and signal lines 13 are mounted on the surface of the substrate 11A. A spin torque oscillator 14 and a conductive layer 15 are stacked in this order on the surface of the signal line 13 opposite the substrate 11A. Therefore, the substrate 11A has a stacked structure of the signal line 13, the spin torque oscillator 14, and the conductive layer 15. In the high-frequency communication device 10, the terminals 12, the signal lines 13, the spin torque oscillator 14, and the conductive layer 15 are embedded in the insulating film 11B.

[0016] The signal line 13 is electrically connected to the spin torque oscillator 14 and is also connected to, for example, a signal processing circuit 16 formed in the high-frequency communication device 10. That is, the signal line 13 is a wiring that connects the signal processing circuit 16 and the spin torque oscillator 14. The signal line 13 is a current path that transmits, for example, a direct current based on a signal generated in the signal processing circuit 16 to the spin torque oscillator 14, or transmits a direct current based on a high-frequency signal received by the spin torque oscillator 14 to the signal processing circuit 16. The signal line 13 extends, for example, in the Y-axis direction, which is perpendicular to the Z-axis direction. Examples of materials that can be used to form the signal line 13 include highly conductive materials such as copper (Cu), aluminum (Al), silver (Ag), or alloys thereof. The signal line 13 is set to, for example, a first potential. The signal processing circuit 16 may be provided external to the high-frequency communication device 10. The signal line 13 is a specific example of a "first wiring layer" according to one aspect of the present disclosure.

[0017] The spin torque oscillator 14 includes a magnetoresistive film having dimensions of, for example, several nanometers. The magnetoresistive film is a laminated film formed by sequentially stacking a reference layer 143 having a fixed magnetization direction, an insulating layer 142, and a free layer 141 having a magnetization direction that can rotate in response to an external magnetic field. The materials constituting the reference layer 143 and the free layer 141 may each contain Co (cobalt), Fe (iron), and Ni (nickel). The material constituting the insulating layer 142 may contain at least one of magnesium oxide (e.g., MgO) and aluminum oxide (AlOx). The insulating layer 142 may have a thickness that allows carriers such as electrons to tunnel through it. The spin torque oscillator 14 can generate a high-frequency signal by passing a direct current through the signal line 13 in the stacking direction (Z-axis direction). Furthermore, by receiving a high-frequency signal from an external device, the spin torque oscillator 14 can output a direct current based on the high-frequency signal to the signal line 13.

[0018] The conductive layer 15 is located on the opposite side of the signal line 13 in the Z-axis direction across the spin-torque oscillator 14 and includes a horizontal portion that overlaps with part of the spin-torque oscillator 14 in the Z-axis direction. Part of the horizontal portion of the conductive layer 15 covers the free layer 141 of the spin-torque oscillator 14. An opening 15K is provided in the horizontal portion of the conductive layer 15. The conductive layer 15 is connected to the terminal 12. The terminal 12 is set to a second potential different from the first potential set to the signal line 13. Therefore, the conductive layer 15 is also set to the second potential. The second potential is, for example, ground potential. Examples of materials that can be used to form the conductive layer 15 include highly conductive materials such as copper (Cu), aluminum (Al), silver (Ag), or alloys thereof. The conductive layer 15 is a specific example of a "second wiring layer" according to one aspect of the present disclosure.

[0019] (High-Frequency Communication Device 20) The high-frequency communication device 20 includes, for example, a base 21, a terminal 22, a signal line 23, a spin torque oscillator 24, and a conductive layer 25.

[0020] The base 21 has a surface 21FS opposite the surface 11FS of the high-frequency communication device 10. The base 21 also has a back surface 21BS opposite the surface 21FS. The base 21 includes a substrate 21A and an insulating film 21B covering the surface of the substrate 21A. In the configuration example of FIG. 1A , the surface of the insulating film 21B coincides with the surface 21FS of the base 21, and the back surface of the substrate 21A coincides with the back surface 21BS of the base 21. The substrate 21A is, for example, an electrically insulating substrate. Examples of materials that can be used for the substrate 21A include the same materials as those for the substrate 11A. However, the material for the substrate 21A may be different from that of the substrate 11A. A terminal 22 and a signal line 23 are mounted on the surface of the substrate 21A. A spin torque oscillator 24 and a conductive layer 25 are stacked in this order on the surface of the signal line 23 opposite the substrate 21A. Therefore, the substrate 21A has a layered structure of the signal line 23, the spin torque oscillator 24, and the conductive layer 25. In the high-frequency communication device 20, the terminal 22, the signal line 23, the spin torque oscillator 24, and the conductive layer 25 are embedded in the insulating film 21B.

[0021] The signal line 23 is electrically connected to the spin torque oscillator 24 and is also connected to, for example, a signal processing circuit 26 formed in the high-frequency communication device 20. That is, the signal line 23 is a wiring that connects the signal processing circuit 26 and the spin torque oscillator 24. The signal line 23 is a current path that transmits, for example, a direct current based on a signal generated in the signal processing circuit 26 to the spin torque oscillator 24, or transmits a direct current based on a high-frequency signal received by the spin torque oscillator 24 to the signal processing circuit 26. The signal line 23 extends, for example, in the X-axis direction, which is perpendicular to both the Z-axis and the Y-axis directions. The signal line 23 may be made of the same material as the signal line 13. However, the material of the signal line 23 may be different from the material of the signal line 13. The signal line 23 is set to, for example, a third potential. The signal processing circuit 26 may be provided outside the high-frequency communication device 20. The signal line 23 is a specific example corresponding to a "first wiring layer" or a "third wiring layer" according to an aspect of the present disclosure.

[0022] The spin torque oscillator 24 has substantially the same configuration as the spin torque oscillator 14. Specifically, the spin torque oscillator 24 includes a magnetoresistive film having dimensions of, for example, several nanometers. The magnetoresistive film is a laminated film formed by sequentially stacking a reference layer 243 with a fixed magnetization direction, an insulating layer 242, and a free layer 241 whose magnetization direction can rotate in response to an external magnetic field. The materials constituting the reference layer 243 and the free layer 241 may each contain Co (cobalt), Fe (iron), and Ni (nickel). The material constituting the insulating layer 242 may contain at least one of magnesium oxide (e.g., MgO) and aluminum oxide (AlOx). The insulating layer 242 may have a thickness sufficient to allow tunneling of carriers such as electrons. The spin torque oscillator 24 can generate a high-frequency signal by passing a direct current through the signal line 23 in the stacking direction (Z-axis direction). Furthermore, by receiving a high frequency signal from an external device, a direct current based on the high frequency signal can be output to the signal line 23 .

[0023] The conductive layer 25 is located on the opposite side of the signal line 23 across the spin torque oscillator 24 in the Z-axis direction. The conductive layer 25 includes a horizontal portion 251 that overlaps a portion of the spin torque oscillator 24 in the Z-axis direction. Part of the horizontal portion 251 covers the free layer 241 of the spin torque oscillator 24. An opening 25K is provided in the horizontal portion 251. The conductive layer 25 is connected to the terminal 22. The terminal 22 is set to a fourth potential different from the third potential set to the signal line 23. Therefore, the conductive layer 25 is also set to the fourth potential. The fourth potential is, for example, ground potential. Examples of materials that can be used to form the conductive layer 25 include highly conductive materials such as copper (Cu), aluminum (Al), silver (Ag), or alloys thereof. In the high-frequency communication module 1, the high-frequency communication device 10 and the high-frequency communication device 20 are preferably arranged such that the opening 15K and the opening 25K face each other in the Z-axis direction. That is, in the high-frequency communication module 1, it is desirable that the positions of the openings 15K and 25K coincide with each other in the XY plane perpendicular to the Z axis. However, the present disclosure is not limited to the case where the positions of the openings 15K and 25K coincide with each other in the XY plane perpendicular to the Z axis, and the positions of the openings 15K and 25K may be misaligned in the XY plane. Note that the conductive layer 15 is a specific example corresponding to the "second wiring layer" or "fourth wiring layer" as one embodiment of the present disclosure.

[0024] 2A to 2E, an example of a method for manufacturing the high-frequency communication module 1 will be described. Each of Figures 2A to 2E is a cross-sectional view illustrating one step in the method for manufacturing the high-frequency communication module 1.

[0025] The high-frequency communication device 10 is manufactured as follows. First, a substrate 11A is prepared as shown in FIG. 2A , and then the signal lines 13 and terminals 12 are selectively formed in predetermined regions on the surface 11AS of the substrate 11A, each having a predetermined thickness. The signal lines 13 and terminals 12 can be formed by, for example, sputtering. Next, an insulating film 11B1 is formed on the surface 11AS so as to fill the peripheries of the signal lines 13 and terminals 12.

[0026] 2B, the spin torque oscillator 14 is formed so as to overlap a portion of the signal line 13. After that, an insulating film 11B2 is formed so as to cover the insulating film 11B1, the signal line 13, the terminal 12, and the spin torque oscillator 14.

[0027] 2C, a portion of the insulating film 11B2 is dug down in the thickness direction so as to expose a portion of the top surface 14S of the spin torque oscillator 14. Furthermore, a groove 15U is formed so as to expose a portion of the top surface 12S of the terminal 12.

[0028] 2D , a conductive layer 15 is formed to fill the groove 15U and cover the upper surface 11B2S of the insulating film 11B2 and part of the upper surface 14S of the spin torque oscillator 14. At this time, an opening 15K is formed in the conductive layer 15 at a predetermined position so that part of the upper surface 14S is exposed.

[0029] 2E, an insulating film 11B3 is formed so as to cover the upper surface 11B2S of the insulating film 11B2 and the conductive layer 15. This completes the insulating film 11B, and obtains the base 11. As a result, the high-frequency communication device 10 is completed.

[0030] The high-frequency communication device 20 is manufactured using the same method as the above-described method for manufacturing the high-frequency communication device 10. Then, the high-frequency communication device 10 and the high-frequency communication device 20 are fixed together using, for example, a support 100 ( FIG. 1A ) so that the surface 11FS of the high-frequency communication device 10 and the surface 21FS of the high-frequency communication device 20 face each other while being spaced apart from each other. As a result, the high-frequency communication module 1 can be manufactured.

[0031] [1.3 Effects] As described above, in the high-frequency communication devices 10 and 20 in the high-frequency communication module 1 according to an embodiment of the present disclosure, the spin torque oscillator 14 and 24 are provided between the signal line 13 and the conductive layer 15 and 25, respectively. Therefore, the high-frequency communication devices 10 and 20 have a simple configuration that does not include a coil, yet can generate high-frequency signals and transmit them to an external device in a non-contact manner, or receive high-frequency signals from an external device in a non-contact manner. In contrast, in a structure that performs contact communication using metal wiring, the presence of the metal wiring can cause capacitive coupling, which can hinder high-speed communication. The high-frequency communication module 1 according to the present disclosure has a structure that performs contactless communication, so capacitive coupling does not occur, which is advantageous for increasing communication speeds.

[0032] Furthermore, in the high-frequency communication module 1, openings 15K and 25K are provided in parts of the conductive layers 15 and 25 that overlap with the spin-torque oscillators 14 and 24 in the Z-axis direction. This allows high-frequency signals to be transmitted and received efficiently through the openings 15K and 25K. Furthermore, because the high-frequency communication devices 10 and 20 of the high-frequency communication module 1 do not require a coil, they are advantageous in terms of reducing the footprint and thickness compared to high-frequency communication devices that use a coil.

[0033] [1.4 Modifications of the First Embodiment] (First Modification) FIG. 3A is a plan view illustrating an example configuration of a high-frequency communication module 1A according to a first modification of the first embodiment (hereinafter referred to as modification 1-1). FIG. 3B is a plan view illustrating an example plan configuration of the high-frequency communication module 1A. However, in FIG. 3B, to ensure visibility, some components illustrated in FIG. 3A are omitted. FIG. 3A also illustrates a cross section taken along the III-III cutting line illustrated in FIG. 3B as viewed in the direction of the arrows. The high-frequency communication module 1A corresponds to a specific example of a "high-frequency communication module" according to one aspect of the present disclosure.

[0034] In the radio frequency communication module 1A of Modification 1-1, the radio frequency communication device 10 includes multiple spin torque oscillators 14 connected in parallel between one signal line 13 and one conductive layer 15. In the radio frequency communication module 1A, the radio frequency communication device 20 also includes multiple spin torque oscillators 24 connected in parallel between one signal line 23 and one conductive layer 25. In the radio frequency communication module 1A, as shown in FIGS. 3A and 3B , multiple spin torque oscillators 24 are preferably arranged facing each other in the Z-axis direction, corresponding to the multiple spin torque oscillators 14. While FIGS. 3A and 3B illustrate an example in which four spin torque oscillators 14 and four spin torque oscillators 24 are arranged, the radio frequency communication module 1A is not limited to this. In the radio frequency communication module 1A, the number of spin torque oscillators 14 and the number of spin torque oscillators 24 can be set to any number as long as they are the same.

[0035] In the radio frequency communication module 1A of Modification 1-1, radio frequency signals can be transmitted and received between multiple spin torque oscillators 14 connected in parallel between one signal line 13 and one conductive layer 15 and multiple spin torque oscillators 24 connected in parallel between one signal line 23 and one conductive layer 25. For example, as in the radio frequency communication module 1 described in the first embodiment, a pair of spin torque oscillators 14, 24 each having a relatively large area in the XY plane is prone to variations in thickness in the Z axis direction in the XY plane. This tends to result in large variations in current density in the XY plane. In contrast, the radio frequency communication module 1A includes multiple pairs of spin torque oscillators 14, 24 with smaller areas in the XY plane, thereby reducing variations in current density in the XY plane for each spin torque oscillator 14, 24. Therefore, the radio frequency communication module 1A can stably transmit and receive radio frequency signals of a predetermined intensity compared to the radio frequency communication module 1.

[0036] Furthermore, in the radio frequency communication module 1A of Modification 1-1, the degree of freedom in designing the overall shape of the radio frequency communication module 1A can be improved by changing the positions of the spin torque oscillators 14, 24. Therefore, when the radio frequency communication module 1A is mounted on another electronic device, the degree of freedom in the mounting position is improved.

[0037] 2. Second Embodiment [2.1 Configuration] Fig. 4A is a cross-sectional view illustrating an example configuration of a high-frequency communication module 2 according to a second embodiment of the present disclosure. Fig. 4B is a plan view illustrating an example plan configuration of the high-frequency communication module 2. However, in Fig. 4B, to ensure visibility, some components illustrated in Fig. 4A are omitted. Fig. 4A also illustrates a cross section taken along the IV-IV cutting line illustrated in Fig. 4B as viewed in the direction of the arrows. Note that the high-frequency communication module 2 corresponds to a specific example of a "high-frequency communication module" according to one aspect of the present disclosure.

[0038] In the high-frequency communication module 2, waveguide walls 17 and 27 are provided between the high-frequency communication device 10 and the high-frequency communication device 20. Furthermore, the conductive layer 15 of the high-frequency communication device 10 has a wall portion 153, and the conductive layer 25 of the high-frequency communication device 20 has a wall portion 253. Except for these points, the configuration of the high-frequency communication module 2 is substantially the same as the configuration of the high-frequency communication module 1 described in the first embodiment. Note that in Figures 4A and 4B, the high-frequency communication device 10 includes multiple spin torque oscillators 14, and the high-frequency communication device 20 includes multiple spin torque oscillators 24, but the number of spin torque oscillators 14 and 24 may each be one or more.

[0039] Specifically, the conductive layer 15 has a horizontal portion 151 and a wall portion 153. The horizontal portion 151 covers part of the surface of the spin torque oscillator 14 opposite the signal line 13 and includes an opening 15K, and extends along the XY plane. The wall portion 153 faces at least part of the end face of the spin torque oscillator 14 at a distance and extends in the Z-axis direction. As shown in FIG. 4B , the wall portion 153 is provided to surround the spin torque oscillator 14 along the XY plane. The wall portion 153 can be made of a metal material such as Cu (copper).

[0040] Similarly, the conductive layer 25 has a horizontal portion 251 and a wall portion 253. The horizontal portion 251 covers part of the surface of the spin torque oscillator 24 opposite the signal line 23 and includes the opening 25K, and extends along the XY plane. The wall portion 253 faces at least part of the end face of the spin torque oscillator 24 at a distance and extends in the Z-axis direction. As shown in FIG. 4B , the wall portion 253 is provided to surround the spin torque oscillator 24 along the XY plane. The wall portion 253 can be made of a metal material such as Cu (copper).

[0041] The high-frequency communication device 10 further includes a plurality of waveguide walls 17. The plurality of waveguide walls 17 are each located on the opposite side of the conductive layer 15 from the spin torque oscillator 14 in the Z-axis direction. The plurality of waveguide walls 17 are preferably spaced apart from the conductive layer 15. The plurality of waveguide walls 17 are preferably arranged to surround regions corresponding to the plurality of openings 15K in the XY plane. The waveguide walls 17 may also be made of a metal material such as Cu (copper).

[0042] Similarly, the high-frequency communication device 20 includes a plurality of waveguide walls 27. Each of the plurality of waveguide walls 27 is located on the opposite side of the conductive layer 25 from the spin torque oscillator 24 in the Z-axis direction. The plurality of waveguide walls 27 may be spaced apart from the conductive layer 25. The plurality of waveguide walls 27 may be arranged to surround regions corresponding to the plurality of openings 25K in the XY plane. The waveguide walls 27 may also be made of a metal material such as Cu (copper).

[0043] 2.2 Effects and Effects As described above, the high-frequency communication module 2 of this embodiment includes the wall portions 153 and 253 and the waveguide walls 17 and 27. This makes it easier to prevent unwanted high-frequency waves from entering the high-frequency communication module 2 from the surrounding area. Furthermore, when the high-frequency communication module 2 includes multiple spin torque oscillators 14 and 24 as shown in FIGS. 4A and 4B , so-called crosstalk can be easily avoided. For example, it is easier to prevent a high-frequency signal generated by a spin torque oscillator 14 from being received by other spin torque oscillators 24 other than the corresponding spin torque oscillator 24. Therefore, the high-frequency communication module 2 of this embodiment can achieve better non-contact communication even when it is miniaturized.

[0044] In the high-frequency communication module 2 of this embodiment, the wall portion 153 of the high-frequency communication device 10 may be spaced apart from the horizontal portion 151. That is, a structure equivalent to the wall portion 153 electrically isolated from the surroundings may be provided around the spin torque oscillator 14, separate from the conductive layer 15. By providing a metal body electrically isolated from the conductive layer 15 around the spin torque oscillator 14, i.e., by providing an electrically isolated metal body around the spin torque oscillator 14, it is possible to prevent unwanted high-frequency waves from entering from the surroundings of the spin torque oscillator 14, while reducing the attenuation of high-frequency signals to be transmitted and received between the high-frequency communication device 10 and the high-frequency communication device 20. The same applies to the wall portion 253 of the high-frequency communication device 20.

[0045] 5 is a cross-sectional view illustrating an example configuration of a high-frequency communication module 3 according to a third embodiment of the present disclosure. The high-frequency communication module 3 corresponds to a specific example of a "high-frequency communication module" according to one embodiment of the present disclosure.

[0046] In the high-frequency communication module 3, the high-frequency communication device 10 further includes a high-frequency shield layer 18, and the high-frequency communication device 20 further includes a high-frequency shield layer 28. Except for these points, the configuration of the high-frequency communication module 3 is substantially the same as the configuration of the high-frequency communication module 1 described in the first embodiment. Note that in FIG. 5, the high-frequency communication device 10 includes one spin torque oscillator 14, and the high-frequency communication device 20 includes one spin torque oscillator 24, but the number of spin torque oscillators 14, 24 may each be two or more. Note that the high-frequency communication module 3 is provided, for example, between the circuit chip 40 and the circuit chip 50.

[0047] As shown in FIG. 5 , the high-frequency communication device 10 further includes a high-frequency shield layer 18 provided on the opposite side of the conductive layer 15 from the spin torque oscillator 14 in the Z-axis direction. That is, the high-frequency shield layer 18 is provided on the back surface 11BS of the base 11. The high-frequency shield layer 18 may be made of a metal material such as Cu (copper). A circuit chip 40 is provided on the opposite side of the high-frequency shield layer 18 from the spin torque oscillator 14 in the Z-axis direction. The circuit chip 40 includes, for example, a signal processing circuit 41. The spin torque oscillator 14 may be connected to the signal processing circuit 41 via a signal line 13. Alternatively, the signal processing circuit 41 may be electrically isolated from the high-frequency communication device 10.

[0048] Similarly, the high-frequency communication device 20 further includes a high-frequency shield layer 28 provided on the opposite side of the conductive layer 25 from the spin torque oscillator 24 in the Z-axis direction. That is, the high-frequency shield layer 28 is provided on the back surface 21BS of the base 21. The high-frequency shield layer 28 can also be made of a metal material such as Cu (copper). A circuit chip 50 is provided on the opposite side of the high-frequency shield layer 28 from the spin torque oscillator 24 in the Z-axis direction. The circuit chip 50 includes, for example, a signal processing circuit 51. The spin torque oscillator 24 may be connected to the signal processing circuit 51 via a signal line 23. Alternatively, the signal processing circuit 51 may be electrically isolated from the high-frequency communication device 20.

[0049] [3.2 Effects] As described above, in the high-frequency communication module 3 of this embodiment, the high-frequency shield layer 18 is provided between the circuit chip 40 and the spin torque oscillator 14, and the high-frequency shield layer 28 is provided between the circuit chip 50 and the spin torque oscillator 24. This reduces the effect of high frequencies generated in at least one of the spin torque oscillator 14 and the spin torque oscillator 24 on the signal processing circuits 41 of the circuit chip 40 and 51 of the circuit chip 50.

[0050] 6 is a cross-sectional view illustrating an example configuration of a high-frequency communication module 4 according to a fourth embodiment of the present disclosure. The high-frequency communication module 4 corresponds to a specific example of a "high-frequency communication module" according to one embodiment of the present disclosure.

[0051] In the high-frequency communication module 4, for example, the high-frequency communication device 10 further includes a signal amplifying transistor 19 provided between the current source CS and the signal line 13. Except for this, the configuration of the high-frequency communication module 4 is substantially the same as the configuration of the high-frequency communication module 1 described in the first embodiment. Note that in Fig. 5, the high-frequency communication device 10 includes one spin torque oscillator 14 and the high-frequency communication device 20 includes one spin torque oscillator 24, but the number of spin torque oscillators 14, 24 may each be two or more.

[0052] 6, the high-frequency communication device 10 is a high-frequency transmitter that transmits high-frequency signals, and the high-frequency communication device 20 is a high-frequency receiver that receives the high-frequency signals from the high-frequency communication device 10. In the high-frequency communication device 10, for example, a direct current based on a signal generated in the signal processing circuit 16 is amplified in the signal amplifying transistor 19 and then transmitted to the spin torque oscillator 14. Therefore, even if the direct current from the signal processing circuit 16 is weak, a direct current large enough to oscillate a high frequency in the spin torque oscillator 14 can be obtained.

[0053] In the configuration example of the high-frequency communication module 4 shown in Figure 6, the signal amplification transistor 19 is provided only in the high-frequency communication device 10, but the high-frequency communication device 20 may also be provided with a signal amplification transistor similar to that of the high-frequency communication device 10.

[0054] 7 is a cross-sectional view illustrating an example configuration of a high-frequency communication module 5 according to a fifth embodiment of the present disclosure. The high-frequency communication module 5 corresponds to a specific example of a "high-frequency communication module" according to one embodiment of the present disclosure.

[0055] In the high-frequency communication module 5, the surface 11FS and the surface 21FS abut against each other. The high-frequency communication device 10 also includes a communication line 31 provided on the same layer as the signal line 13, a pad 33 exposed on the surface 11FS, and a via 32 connecting the communication line 31 and the pad 33, which are spaced apart in the Z direction. A shield 34 made of a metal material or the like may also be provided between the spin torque oscillator 14 and the communication line 31, via 32, and pad 33 in the XY plane.

[0056] Similarly, the high-frequency communication device 20 includes a communication line 61 provided in the same layer as the signal line 23, a pad 63 exposed on the surface 21FS, and a via 62 connecting the communication line 61 and the pad 63, which are spaced apart in the Z direction. Furthermore, a shield 64 made of a metal material or the like may be provided between the spin torque oscillator 24 and the communication line 61, via 62, and pad 63 in the XY plane.

[0057] In the high-frequency communication module 5, the pads 33 and 63 are physically in contact with each other, thereby electrically connecting them. Therefore, the communication lines 31 and 61 are physically connected to each other so as to be able to communicate with each other. The pads 33 and 63 are joined by, for example, Cu-Cu bonding.

[0058] [5.2 Effects] The high-frequency communication module 5 can transmit and receive high-frequency signals in a non-contact manner using the spin torque oscillators 14 and 24, as well as transmit and receive signals in a wired manner via the communication lines 31 and 61.

[0059] 8 is a cross-sectional view illustrating an example of a configuration of a high-frequency communication module 6 according to a sixth embodiment of the present disclosure. The high-frequency communication module 6 corresponds to a specific example of a "high-frequency communication module" according to one embodiment of the present disclosure.

[0060] The high-frequency communication module 6 further includes hydrogen blocking layers BL1 and BL2 between the conductive layer 15 and the conductive layer 25 that face each other in the Z-axis direction. The hydrogen blocking layer BL1 is provided near the surface 11FS of the high-frequency communication device 10, and the hydrogen blocking layer BL2 is provided near the surface 21FS of the high-frequency communication device 20. The hydrogen blocking layers BL1 and BL2 may be in contact with each other or may be spaced apart from each other. Alternatively, it is sufficient that at least one of the hydrogen blocking layer BL1 and the hydrogen blocking layer BL2 is provided.

[0061] The hydrogen blocking layers BL1 and BL2 block the permeation of hydrogen (moisture) and are made of, for example, SiN (silicon nitride), graphene, or a metal oxide film such as aluminum oxide.

[0062] [6.2 Effects] The provision of hydrogen blocking layers BL1, BL2 in the high-frequency communication module 6 suppresses the movement of hydrogen between the high-frequency communication device 10 and the high-frequency communication device 20. This prevents hydrogen resulting from moisture entering from the outside and hydrogen generated inside the high-frequency communication device 10 and the high-frequency communication device 20 during the manufacturing process from diffusing widely inside the high-frequency communication module 6, effectively suppressing performance degradation of, for example, transistors present inside the high-frequency communication module 6.

[0063] 7. Other Modifications Although the present disclosure has been described above with reference to the embodiments and modifications, the present disclosure is not limited to the above-described embodiments, etc., and various modifications are possible. For example, the materials, types, positions, shapes, etc. of the components of the high-frequency communication module described in the above-described embodiments are not limited to those described above.

[0064] Furthermore, the aspects of the high frequency communication modules described in the first embodiment, modified example 1-1, and second to eighth embodiments may be combined in any manner.

[0065] In a high-frequency communication device according to an embodiment of the present disclosure, one or more spin torque oscillators are provided between a first wiring layer and a second wiring layer. Therefore, the device has a simple configuration that does not include a coil, yet can generate high-frequency signals and transmit them to an external device in a non-contact manner, or receive high-frequency signals from an external device in a non-contact manner. The second wiring layer has an opening at a portion where it overlaps with the spin torque oscillator in the first direction, allowing for efficient transmission and reception of high-frequency signals through the opening. Furthermore, because a coil is not required, the device is advantageous in terms of reducing the occupied area and thickness compared to high-frequency communication devices that use a coil. In other words, the high-frequency communication device according to an embodiment of the present disclosure can perform excellent non-contact communication while maintaining a structure suitable for miniaturization.

[0066] The effects described in this specification are merely examples and are not limited thereto, and other effects may also be present. Furthermore, the present disclosure may have the following configurations. <1> A high-frequency communication device comprising: a first wiring layer set to a first potential; one or more spin-torque oscillators provided in the first wiring layer; and a second wiring layer located on the opposite side of the first wiring layer with the one or more spin-torque oscillators sandwiched therebetween in the first direction, the second wiring layer having one or more openings in a portion where the second wiring layer overlaps with each of the one or more spin-torque oscillators in the first direction, and set to a second potential different from the first potential. <2> The high-frequency communication device according to <1>, wherein each of the one or more spin-torque oscillators includes a stacked film including, in order, a reference layer whose magnetization direction is fixed, an insulating layer, and a free layer whose magnetization direction is rotatable. <3> The high-frequency communication device according to <1> or <2>, wherein the second potential is ground potential. <4> The high-frequency communication device according to any one of <1> to <3> above, which is a high-frequency transmitting device for transmitting high-frequency signals or a high-frequency receiving device for receiving high-frequency signals. <5> The high-frequency communication device according to any one of <1> to <4> above, which includes a plurality of the spin-torque oscillators connected in parallel between the one first wiring layer and the one second wiring layer. <6> The high-frequency communication device according to any one of <1> to <5> above, wherein the one conductive layer has: a first portion covering a part of the surface of the spin-torque oscillator opposite to the one first wiring layer and including the one or more openings; and a second portion facing and spaced from at least part of the end face of the spin-torque oscillator. <7> The high-frequency communication device according to any one of <1> to <6> above, further including one or more waveguide walls located on the opposite side of the one or more spin-torque oscillators from the one second wiring layer, spaced from the one second wiring layer, and surrounding regions corresponding to the one or more openings. <8> The high-frequency communication device according to any one of <1> to <7>, further comprising a high-frequency shielding layer provided on an opposite side of the one or more spin torque oscillators from the one first wiring layer.<9> The high-frequency communication device according to any one of <1> to <8>, further comprising a signal amplifying transistor between a current source and the one first wiring layer. <10> The high-frequency communication device according to claim 1. <11> The high-frequency communication device according to <2>, wherein the insulating layer is made of a material containing at least one of magnesium oxide and aluminum oxide. <12> The high-frequency communication device according to <2> or <10>, wherein the reference layer and the free layer are made of a material containing Co (cobalt), Fe (iron), and Ni (nickel). <12> A semiconductor device includes a first high-frequency communication device and a second high-frequency communication device, wherein the first high-frequency communication device includes: a first wiring layer set to a first potential; one or more spin-torque oscillators provided on the first communication line; and a second wiring layer located on the opposite side of the first communication line in the first direction from the one or more spin-torque oscillators, the second wiring layer having one or more first openings in parts overlapping with each of the one or more spin-torque oscillators in the first direction, and set to a second potential different from the first potential; and the second high-frequency communication device includes: a third wiring layer set to a third potential; one or more second spin-torque oscillators provided on the third wiring layer; and a fourth wiring layer located on the opposite side of the third wiring layer in the first direction from the one or more second spin-torque oscillators, the second wiring layer having one or more second openings in parts overlapping with each of the one or more second spin-torque oscillators in the first direction, and set to a fourth potential different from the third potential. A high-frequency communication module, wherein the first high-frequency communication device and the second high-frequency communication device are arranged such that the one or more first openings and the one or more second openings face each other, and a high-frequency signal propagates between the first high-frequency communication device and the second high-frequency communication device. <13> The high-frequency communication module according to <12> above, wherein the first high-frequency communication device further includes one first communication line, and the second high-frequency communication device further includes one second communication line electrically connected to the one first communication line. <14> The high-frequency communication module according to <12> or <13> above, further including a hydrogen blocking layer provided between the one second wiring layer and the one fourth wiring layer.

[0067] This application claims priority based on Japanese Patent Application No. 2023-212402, filed on December 15, 2023, in the Japan Patent Office, the entire contents of which are incorporated herein by reference.

[0068] Those skilled in the art will recognize that various modifications, combinations, subcombinations, and variations may occur depending on design requirements and other factors, and are intended to be within the scope of the appended claims and their equivalents.

Claims

1. A high-frequency communication device comprising: a first wiring layer set to a first potential; one or more spin torque oscillators provided in the first wiring layer; and a second wiring layer located on the opposite side of the first wiring layer in a first direction across the one or more spin torque oscillators, having one or more openings provided in a portion of the area overlapping with each of the one or more spin torque oscillators in the first direction, and set to a second potential different from the first potential.

2. The high-frequency communication device according to claim 1, wherein each of the one or more spin torque oscillators includes a laminated film in which a reference layer whose magnetization direction is fixed, an insulating layer, and a free layer whose magnetization direction is rotatable are laminated in that order.

3. The high frequency communication device according to claim 1, wherein the second potential is a ground potential.

4. The high frequency communication device according to claim 1, which is a high frequency transmitting device for transmitting a high frequency signal, or a high frequency receiving device for receiving a high frequency signal.

5. The high frequency communication device according to claim 1, further comprising a plurality of said spin torque oscillators connected in parallel between said one first wiring layer and said one second wiring layer.

6. A high-frequency communication device as claimed in claim 1, wherein the one conductive layer has a first portion covering a part of a surface of the spin torque oscillator opposite the one first wiring layer and including the one or more openings, and a second portion facing and spaced apart from at least a part of an end face of the spin torque oscillator.

7. The high-frequency communication device according to claim 1, further comprising one or more waveguide walls located on the opposite side of the one or more spin torque oscillators from the one or more second wiring layers, spaced apart from the one or more second wiring layers, and surrounding areas corresponding to the one or more openings.

8. The high frequency communication device according to claim 1, further comprising a high frequency shield layer provided on the opposite side of the one or more spin torque oscillators from the one first wiring layer.

9. The high frequency communication device according to claim 1, further comprising a signal amplifying transistor between a current source and said one first wiring layer.

10. The high-frequency communication device according to claim 2, wherein the insulating layer is made of a material containing at least one of magnesium oxide and aluminum oxide.

11. The high frequency communication device according to claim 2, wherein the constituent material of said reference layer and the constituent material of said free layer each contain Co (cobalt), Fe (iron), and Ni (nickel).

12. A semiconductor device comprising a first high frequency communication device and a second high frequency communication device, the first high frequency communication device comprising: a first wiring layer set to a first potential; one or more spin torque oscillators provided on the first communication line; and a second wiring layer located on the opposite side of the first communication line in the first direction from the one or more spin torque oscillators, having one or more first openings in a portion overlapping with each of the one or more spin torque oscillators in the first direction, and set to a second potential different from the first potential; the second high frequency communication device comprising: a third wiring layer set to a third potential; one or more second spin torque oscillators provided on the third wiring layer; and a fourth wiring layer located on the opposite side of the third wiring layer in the first direction from the one or more second spin torque oscillators, having one or more second openings in a portion overlapping with each of the one or more second spin torque oscillators in the first direction, and set to a fourth potential different from the third potential; A high-frequency communication module, wherein the first high-frequency communication device and the second high-frequency communication device are arranged such that the one or more first openings and the one or more second openings face each other, and a high-frequency signal is propagated between the first high-frequency communication device and the second high-frequency communication device.

13. The high frequency communication module according to claim 12, wherein the first high frequency communication device further includes a first communication line, and the second high frequency communication device further includes a second communication line electrically connected to the first communication line.

14. The high frequency communication module according to claim 12, further comprising a hydrogen blocking layer provided between said one second wiring layer and said one fourth wiring layer.

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