Back-contact cell and preparation method therefor, and cell module

By using a silicon alloy layer and a metal conductive layer to replace the transparent conductive film and silver gate wire in the back contact battery, the problem of high battery cost is solved, and cost reduction and battery efficiency are achieved.

WO2025152343A1 Publication Date: 2025-07-24GOLDEN SOLAR (QUANZHOU) NEW ENERGY TECH CO LTD
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Patent Information

Application Number
PCT/CN2024/099894
Authority / Receiving Office
WO · WO
Patent Type
Applications
Current Assignee / Owner
Priority Date
2024-01-19
Filing Date
2024-06-18
Publication Date
2025-07-24

AI Technical Summary

Technical Problem

While ensuring excellent battery conversion efficiency, existing back contact batteries require the use of expensive transparent conductive film layers and low-temperature silver paste, resulting in high battery costs.

Method used

The silicon alloy layer and metal conductive layer are used to replace the transparent conductive film layer and silver gate lines. The silicon alloy layer and metal conductive layer are formed through magnetron sputtering process, and an insulating groove is opened between them to simplify the process and avoid the use of expensive low-temperature silver paste and transparent conductive film layers.

Benefits of technology

The battery production cost is greatly reduced while maintaining excellent battery conversion efficiency. The silicon alloy layer forms good ohmic contact with the metal conductive layer, improving current transmission efficiency.

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Abstract

A back-contact cell and a preparation method therefor, and a cell module, which belong to the technical field of back-contact cells. The back-contact cell comprises: a silicon wafer, which has a front surface and a back surface; and first semiconductor layers and second semiconductor layers, which are disposed on the back surface and are alternately arranged in the Y-axis direction of the silicon wafer. The back-contact cell further comprises a silicon alloy layer and a metal conductive layer, which are sequentially disposed outwards in the Z-axis direction of the silicon wafer, wherein the silicon alloy layer is disposed on the outer surfaces of the second semiconductor layers and extends to the outer surfaces of adjacent first doped silicon crystal layers; and the sheet resistance of the silicon alloy layer is 60-100 Ω / □, and the sheet resistance of the metal conductive layer is 3-50 Ω / □. In the back-contact cell, it is unnecessary to additionally provide a transparent conductive film layer, fingers and busbars, and the manufacture procedure is simpler; in addition, the use of expensive low-temperature silver paste and transparent conductive film layers is not required, thereby significantly reducing the production costs of the cell, and also ensuring excellent cell conversion efficiency.
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