Display panel and manufacturing method therefor, and display device

Abstract

A display panel and a manufacturing method therefor, and a display device. The display panel comprises: a base substrate (1); a pixel defining layer (2), which is located on one side of the base substrate and comprises a plurality of first openings (2-1); a plurality of light-emitting devices (3), which are arranged corresponding to the first openings; an encapsulation layer (4), which is located on the side of the light-emitting devices away from the base substrate; and a black matrix (5), which is located on the side of the encapsulation layer away from the base substrate and comprises a plurality of second openings (5-1), wherein the second openings are arranged in one-to-one correspondence with the first openings, the included angle between the bottom edge of the first opening and the bottom edge of the second opening on the same side is defined as θ1, the included angle between the bottom edge of the first opening and the top edge of the second opening on the opposite side is defined as θ2, and θ1 and θ2 meet the formula (I); and a plurality of color resist blocks, which are arranged corresponding to the second openings.

Description

Display panel, manufacturing method thereof, and display device

[0001] This application claims priority to the Chinese patent application filed with the China Patent Office on March 29, 2024, with application number 202410384491.8 and invention name “Display panel, manufacturing method thereof, and display device”, the content of which should be understood as incorporated into this application by reference. Technical Field

[0002] The present disclosure relates to, but is not limited to, the field of display technology, and in particular to a display panel and a manufacturing method thereof, and a display device. Background Art

[0003] In recent years, organic electroluminescent displays (OLEDs) have gradually received more attention as a new type of flat panel display, and end users have also had higher requirements for product display effects. At present, a polarizer (POL) is usually introduced and placed on the OLED display panel to achieve the function of preventing reflection, but this is very unfavorable for the development of lightweight and low power consumption; in order to pursue a thinner thickness, some technologies can integrate functional films and the like on the display panel through COE (setting a color film on the light-emitting side of the light-emitting device) technology, thereby eliminating the use of polarizers, but this will cause more serious brightness attenuation at side viewing angles. Therefore, there is an urgent need for a display panel with high light extraction efficiency while taking into account the brightness attenuation at side viewing angles.

[0004] Summary of the Invention

[0005] The following is an overview of the subject matter described in detail in this disclosure. This overview is not intended to limit the scope of the claims.

[0006] The present disclosure provides a display panel, comprising:

[0007] substrate;

[0008] A pixel defining layer, located on one side of the base substrate, comprising a plurality of first openings;

[0009] a plurality of light-emitting devices, arranged corresponding to the first openings;

[0010] an encapsulation layer, located on a side of the light-emitting device away from the substrate;

[0011] The black matrix is ​​located on a side of the encapsulation layer away from the base substrate, and includes a plurality of second openings, wherein the second openings are arranged in a one-to-one correspondence with the first openings; the angle between the bottom edge of the first opening and the bottom edge of the second opening on the same side is θ1, and the angle between the bottom edge of the first opening and the top edge of the second opening on the opposite side is θ2, and the angles θ1 and θ2 satisfy

[0012] A plurality of color-resistance blocks are arranged corresponding to the second openings.

[0013] In an exemplary embodiment, the orthographic projection of the second opening on the base substrate covers the orthographic projection of the first opening on the base substrate.

[0014] In an exemplary embodiment, the slope angle of the black matrix is ​​30° to 70°, the thickness of the black matrix is ​​1 μm to 3 μm, the slope angle of the pixel defining layer is 20° to 60°, and the thickness of the color resist block is 2 μm to 5 μm.

[0015] In an exemplary embodiment, a driving structure layer is provided between the base substrate and the pixel defining layer, the driving structure layer includes a plurality of pixel circuits, each of the pixel circuits includes at least seven thin film transistors, and the at least seven thin film transistors include low-temperature polysilicon thin film transistors and oxide thin film transistors.

[0016] In an exemplary embodiment, the light-emitting device includes a first electrode layer, a hole injection layer, a hole transport layer, an electron blocking layer, a light-emitting layer, a hole blocking layer, an electron transport layer, an electron injection layer, and a second electrode layer, which are stacked in sequence.

[0017] The thickness of the electron transport layer is greater than that of the hole blocking layer, and the thickness of the hole transport layer is greater than that of the electron blocking layer.

[0018] In an exemplary embodiment, the difference between the lowest unoccupied molecular orbital energy level of the hole blocking layer and the lowest unoccupied molecular orbital energy level of the electron transport layer is greater than or equal to 0.4 eV and less than or equal to 1 eV;

[0019] The difference between the highest occupied molecular orbital energy level of the hole transport layer and the highest occupied molecular orbital energy level of the electron blocking layer is greater than or equal to -0.5 eV and less than or equal to 0.3 eV;

[0020] The difference between the highest occupied molecular orbital energy level of the host material of the light-emitting layer and the highest occupied molecular orbital energy level of the electron blocking layer is less than or equal to 0.3 eV; and / or

[0021] The difference between the highest occupied molecular orbital energy level of the hole blocking layer and the highest occupied molecular orbital energy level of the host material of the light-emitting layer is greater than or equal to 0.1 eV.

[0022] In an exemplary embodiment,

[0023] The excited triplet energy level of the electron blocking layer is greater than the excited triplet energy level of the host material of the light-emitting layer;

[0024] The excited triplet energy level of the hole blocking layer is greater than the excited triplet energy level of the host material of the light-emitting layer;

[0025] The excited triplet energy level of the electron transport layer is greater than the excited triplet energy level of the hole blocking layer;

[0026] The excited triplet energy level of the hole transport layer is greater than the excited triplet energy level of the electron blocking layer; and / or

[0027] The excited triplet energy level of the electron transport layer is greater than the excited triplet energy level of the hole blocking layer.

[0028] In an exemplary embodiment,

[0029] The mobility of the hole blocking layer is greater than or equal to 10 -9 cm 2 / V·s, and less than or equal to 10 -7 cm 2 / V·s;

[0030] The mobility of the electron transport layer is greater than or equal to 10 -7 cm 2 / V·s, and less than or equal to 10 -5 cm 2 / V·s;

[0031] The mobility of the hole transport layer is greater than or equal to 10 -6 cm 2 / V·s, and less than or equal to 10 -4 cm 2 / V·s; and / or

[0032] The mobility of the electron blocking layer is greater than or equal to 10 -7 cm 2 / V·s, and less than or equal to 10 -4 cm 2 / V·s.

[0033] In an exemplary embodiment, the light-emitting device includes a first electrode layer, a hole injection layer, a first hole transport layer, a first electron blocking layer, a first light-emitting layer, a first hole blocking layer, a first electron transport layer, an N-type charge generation layer, a P-type charge generation layer, a second hole transport layer, a second electron blocking layer, a second light-emitting layer, a second hole blocking layer, a second electron transport layer, an electron injection layer, and a second electrode layer, which are stacked in sequence.

[0034] The thickness of the N-type charge generation layer is greater than the thickness of the first electron blocking layer, and the thickness of the P-type charge generation layer is greater than the thickness of the second electron blocking layer.

[0035] In an exemplary embodiment, the absolute value of the difference between the highest occupied molecular orbital energy level of the P-type charge generation layer and the highest occupied molecular orbital energy level of the second hole transport layer is less than or equal to 0.3 eV; the absolute value of the difference between the lowest unoccupied molecular orbital energy level of the N-type charge generation layer and the lowest unoccupied molecular orbital energy level of the first hole blocking layer is less than or equal to 0.5 eV; and the dipole moment of the N-type charge generation layer is greater than or equal to 4 Debye.

[0036] In an exemplary embodiment,

[0037] The ratio of the mobility of the first hole blocking layer to the mobility of the second hole blocking layer is greater than or equal to 10 - 1 cm 2 / V·s, and less than or equal to 10cm 2 / V·s;

[0038] The ratio of the mobility of the first hole transport layer to the mobility of the second hole transport layer is greater than or equal to 10 - 1 cm 2 / V·s, and less than or equal to 10cm 2 / V·s;

[0039] The ratio of the mobility of the first electron blocking layer to the mobility of the second electron blocking layer is greater than or equal to 10 - 1 cm 2 / V·s, and less than or equal to 10cm 2 / V·s; and / or

[0040] The ratio of the mobility of the first electron transport layer to the mobility of the second electron transport layer is greater than or equal to 10 - 1 cm 2 / V·s, and less than or equal to 10cm 2 / V·s.

[0041] In an exemplary embodiment, the encapsulation layer includes a first inorganic layer, an organic layer, and a second inorganic layer stacked together; a touch layer is provided between the encapsulation layer and the black matrix; and a protective layer is provided on the side of the color resist block away from the base substrate.

[0042] In an exemplary embodiment, the substrate includes a flexible base layer, a barrier layer, and a buffer layer, wherein:

[0043] The material of the flexible base layer includes one or more of polyimide PI, polyethylene terephthalate PET and polycarbonate PC;

[0044] The barrier layer has a size ranging from 5000 angstroms to 6000 angstroms; and / or

[0045] The buffer layer has a size ranging from 3500 angstroms to 4500 angstroms.

[0046] In an exemplary embodiment, each of the pixel circuits further includes a storage capacitor;

[0047] The storage capacitor includes a first plate and a second plate.

[0048] In an exemplary embodiment, the driving structure layer includes a plurality of gate lines and a plurality of data lines distributed in an array, the plurality of gate lines and the plurality of data lines intersect each other to form a plurality of pixel areas, and a pixel circuit corresponding to one pixel is provided in each pixel area.

[0049] In an exemplary embodiment, the driving structure layer further includes a control circuit, which is configured to control the data driving subcircuit to apply a data signal and control the gate driving subcircuit to apply a scan signal. The control circuit is a timing control circuit T-con.

[0050] In an exemplary embodiment, the pixel circuit may include a driving subcircuit, a data writing subcircuit, a compensation subcircuit, a storage subcircuit, a light emitting control subcircuit, and a reset circuit.

[0051] In an exemplary embodiment,

[0052] The light-emitting layer includes a red light-emitting layer, a green light-emitting layer and a blue light-emitting layer;

[0053] The first electrode layer is an anode;

[0054] The second electrode layer is a cathode; and / or

[0055] The hole injection layer, the hole transport layer, the electron blocking layer, the light emitting layer, the hole blocking layer, the electron transport layer and the electron injection layer are light emitting functional layers.

[0056] The present disclosure also provides a display device, comprising: any of the above-mentioned display panels.

[0057] The present disclosure further provides a method for manufacturing a display panel, which is applied to any of the above-mentioned display panels, comprising:

[0058] forming a pixel circuit and a light-emitting device on one side of the base substrate;

[0059] forming an encapsulation layer on a side of the light emitting device away from the substrate; and

[0060] A black matrix and a color resist block are formed on a side of the encapsulation layer away from the substrate.

[0061] Still other aspects will become apparent upon reading and understanding the accompanying drawings and detailed description.

[0062] Summary of the Figures

[0063] FIG1 is a schematic structural diagram of a first display panel in an exemplary embodiment of the present disclosure;

[0064] FIG2 is a schematic structural diagram of a second display panel in an exemplary embodiment of the present disclosure;

[0065] FIG3 is a schematic structural diagram of a first pixel circuit in an exemplary embodiment of the present disclosure;

[0066] FIG4 is a schematic structural diagram of a second pixel circuit in an exemplary embodiment of the present disclosure;

[0067] FIG5 is a schematic structural diagram of a third pixel circuit in an exemplary embodiment of the present disclosure;

[0068] FIG6 is a schematic structural diagram of a fourth pixel circuit in an exemplary embodiment of the present disclosure;

[0069] FIG7 is a schematic structural diagram of a first light emitting device in an exemplary embodiment of the present disclosure;

[0070] FIG8 is a schematic diagram of the energy level relationship of the light-emitting functional layer in an exemplary embodiment of the present disclosure;

[0071] FIG9 is a schematic structural diagram of a second light-emitting device in an exemplary embodiment of the present disclosure;

[0072] FIG10 is a transmission spectrum diagram of exemplary embodiments and comparative examples of the present disclosure;

[0073] FIG. 11 is a chromaticity diagram of exemplary embodiments and comparative examples of the present disclosure.

[0074] Details

[0075] The specific embodiments of the present disclosure are further described in detail below with reference to the accompanying drawings and examples. The following examples are used to illustrate the present disclosure and are merely exemplary, but are not intended to limit the scope of the present disclosure. In the absence of conflict, the embodiments and features in the embodiments of the present disclosure may be combined with each other in any manner.

[0076] Unless otherwise defined, the technical terms or scientific terms used in the embodiments of the present disclosure should have the usual meanings understood by people with ordinary skills in the field to which the present disclosure belongs. The "first", "second" and similar words used in the embodiments of the present disclosure do not indicate any order, quantity or importance, but are only used to distinguish different components. "Include" or "comprise" and similar words mean that the elements or objects appearing before the word include the elements or objects listed after the word and their equivalents, without excluding other elements or objects. "Connect" or "connected" and similar words are not limited to physical or mechanical connections, but may include electrical connections, whether direct or indirect. "Up", "down", "left", "right" and the like are only used to indicate relative positional relationships. When the absolute position of the object being described changes, the relative positional relationship may also change accordingly.

[0077] In recent years, organic electroluminescent displays (OLEDs) have gained increasing attention as a new type of flat-panel display. They offer active illumination, a wide color gamut, high brightness, high contrast, high resolution, wide viewing angle, fast response, low energy consumption, and flexibility. They are currently one of the mainstream information display technologies used in smart display devices. They are widely used in various mobile terminal products, particularly mobile devices, wearable devices, notebooks, in-vehicle displays, AR / VR (augmented reality / virtual reality), and scrolling devices. At the same time, end users have also adopted higher requirements for product display performance, such as higher brightness, higher contrast, better viewing angle display, better power consumption, and higher refresh rates.

[0078] Currently, a polarizer (POL) is usually introduced and placed on top of the OLED display panel, using the polarization principle of light to reduce reflectivity and achieve anti-reflection function. However, the thickness of the display component integrated with such a polarizer is relatively thick, which is very unfavorable for the development of lightweight and thin displays. In addition, when natural light passes through the polarizer, the light with a vibration direction perpendicular to the transmission axis of the polarizer will be absorbed, and only the polarization with a vibration direction parallel to the transmission axis of the polarizer will be transmitted. This working principle greatly reduces the light output efficiency of the device. To achieve high brightness, the current of the device needs to be increased, which is not conducive to the development of low power consumption.

[0079] To achieve even thinner displays, some technologies use COE (color filter on the light-emitting side of the light-emitting device) technology to integrate functional films such as black matrix (BM) and color filter (CF) onto the display panel, eliminating the need for polarizers. However, because BM absorbs not only natural light but also light from within the light-emitting device, it can absorb light from the side of the device, especially at wide viewing angles, resulting in significant brightness degradation at side viewing angles. Therefore, a display panel with high light extraction efficiency while also taking into account brightness degradation at side viewing angles is urgently needed.

[0080] The technical solution of the present disclosure will be described in detail below through exemplary embodiments in conjunction with FIG. 1 to FIG. 11 .

[0081] In some exemplary embodiments of the present disclosure, a display panel is provided, as shown in Figures 1 and 2, which includes: a base substrate 1; a pixel defining layer 2, located on one side of the base substrate 1, including a plurality of first openings 2-1; a plurality of light-emitting devices 3, arranged corresponding to the first openings 2-1; an encapsulation layer 4, located on a side of the light-emitting device 3 away from the base substrate 1; a black matrix 5, located on a side of the encapsulation layer 4 away from the base substrate 1, including a plurality of second openings 5-1, and the second openings 5-1 are arranged in a one-to-one correspondence with the first openings 2-1; the bottom edge of the first opening 2-1 and the bottom edge of the same side of the second opening 5-1 are at an angle of θ1, and the bottom edge of the first opening 2-1 and the top edge of the opposite side of the second opening 5-1 are at an angle of θ2, and the angles θ1 and θ2 satisfy A plurality of color-resist blocks 6 are provided corresponding to the second openings 5 ​​- 1 .

[0082] As shown in Figure 1, a pixel defining layer 2 and a light-emitting device 3 are provided on the top of the base substrate 1. The pixel defining layer 2 includes a plurality of first openings 2-1. The light-emitting device 3 includes a red, green, and blue (RGB) light device, etc., which are arranged in a one-to-one correspondence with the first openings 2-1. An encapsulation layer 4 is provided on the top of the light-emitting device 3 to play a protective role. A black matrix 5 and a color resist block 6 are provided on the top of the encapsulation layer 4. The color resist block 6 is arranged in a one-to-one correspondence with the light-emitting device 3 to adjust the light output, improve the transmittance, increase the light utilization efficiency, reduce the power consumption of the product, increase the color gamut area, and make the panel structure thinner and highly integrated. In theory, a smaller folding and curling radius can be achieved, and the bending reliability can be improved.

[0083] As shown in FIG2 , the black matrix 5 includes a plurality of second openings 5-1, and the second openings 5-1 are arranged in a one-to-one correspondence with the first openings 2-1. θ1 is the angle at which the device light emission is affected by the same side of the black matrix 5, and θ2 is the angle at which the device light emission is affected by the opposite side of the black matrix 5. The sizes of θ1 and θ2 mainly depend on the size of the opening 5-1 and the distance d between the bottom of the first opening 2-1 and the bottom of the second opening 5-1. By limiting While taking into account the front angle of light, adjust the side angle of light of the light emitting device 3 to avoid the opening 5-1 being too large and the distance being too close. This results in less absorption of natural light, greater reflection effect, and insignificant anti-reflection effect. At the same time, avoid opening 5-1 being too small or too far away. This results in greater absorption of the emitted light of the light-emitting device 3 , greater light absorption from the side viewing angle, and severe color deviation, which affects the light extraction efficiency.

[0084] The display panel has a simple structure and is easy to manufacture. It can improve the light extraction efficiency of the display panel while reducing interference from natural light, ensuring brightness effects at side viewing angles and reducing power consumption.

[0085] In some exemplary embodiments, as shown in FIG. 2 , the orthographic projection of the second opening 5 - 1 on the base substrate 1 covers the orthographic projection of the first opening 2 - 1 on the base substrate 1 .

[0086] The shapes of the second opening 5-1 and the first opening 2-1 can be independent of each other, such as square, rectangle, polygon, circle, ellipsoid, etc., without specific limitation. In an exemplary embodiment, the orthographic projection of the second opening 5-1 on the base substrate 1 is set to cover the orthographic projection of the first opening 2-1 on the base substrate 1 to ensure the light extraction efficiency as much as possible.

[0087] In some exemplary embodiments, the slope angle of the black matrix 5 is 30° to 70°, the thickness of the black matrix 5 is 1 μm to 3 μm, the slope angle of the pixel defining layer 2 is 20° to 60°, and the thickness of the color resist block 6 is 2 μm to 5 μm.

[0088] The slope angle of the black matrix 5 is 30° to 70°, for example, 30°, 40°, 50°, 60°, or 70°, etc., without specific limitation, to ensure the light emission effect at the side viewing angle; the slope angle of the pixel defining layer 2 is 20° to 60°, for example, 20°, 30°, 40°, 50°, or 60°, etc., without specific limitation. The thickness of the black matrix 5 is 1μm to 3μm, and the thickness of the color resist block 6 is 2μm to 5μm. Such a configuration can meet the light emission effect and reduce the thickness of the display panel.

[0089] In some exemplary embodiments, the base substrate 1 includes a flexible base layer, a barrier layer and a buffer layer. The material of the flexible base layer may include one or more of PI (polyimide), PET (polyethylene terephthalate) and PC (polycarbonate); the size range of the barrier layer is 5000 angstroms to 6000 angstroms, and the size range of the buffer layer is 3500 angstroms to 4500 angstroms.

[0090] In some exemplary embodiments, a driving structure layer is provided between the base substrate 1 and the pixel defining layer 2, and the driving structure layer includes a plurality of pixel circuits, each of the pixel circuits includes at least seven thin film transistors, and the thin film transistors include low-temperature polysilicon thin film transistors and oxide thin film transistors.

[0091] The thin-film transistor drive circuit plays a crucial role in OLED light emission. It's primarily composed of thin-film transistors, whose characteristics significantly impact OLED performance. Currently, the 7T1C circuit is commonly used, as shown in Figure 3. If all thin-film transistors are low-temperature polycrystalline silicon (LTPS) thin-film transistors, the hysteresis of the DTFTs (drive transistors) made with LTPS can cause the brightness of the screen to not reach the set value when the display panel switches, resulting in flickering. Furthermore, LTPS has significant leakage current, which can significantly affect the current input to the OLED during operation, shortening the lifespan of the OLED device.

[0092] It is possible to consider using OXIDE (oxide) to prepare thin-film transistors (TFTs). The mobility of the active layer of oxide thin-film transistors is relatively low, which results in a smaller leakage current of the TFT and a smaller power consumption of the substrate under low-frequency driving, which can improve the picture quality. Moreover, there is no need to make the DTFT channel in the substrate very long, so the grayscale can be better developed to achieve a high PPI (pixel density). In addition, the hysteresis of the OXIDE-TFT active layer is relatively small, so the substrate is not prone to image retention problems. In addition, the uniformity is better than that of LTPS-TFT.

[0093] A driving structure layer is provided between the base substrate 1 and the pixel defining layer 2. The driving structure layer includes a plurality of pixel circuits. Each pixel circuit includes a thin film transistor (T) and a storage capacitor (C). The number of thin film transistors is at least seven. As shown in FIG3 , the figure is a 7T1C pixel circuit, including seven thin film transistors and one capacitor; as shown in FIG4 , the figure is an 8T2C pixel circuit, including eight thin film transistors and two capacitors; as shown in FIG5 , the figure is a 10T3C pixel circuit, including ten thin film transistors and three capacitors; as shown in FIG6 , the figure is an 8T1C pixel circuit, including eight thin film transistors and one capacitor.

[0094] The thin film transistors in the pixel circuit are set to low-temperature polycrystalline oxide transistors and oxide thin film transistors to form a low-temperature polycrystalline oxide (LTPO) display panel. As shown in Figure 6, T2 is set to an oxide thin film transistor OXIDE-TFT, and the other TFTs are low-temperature polycrystalline silicon thin film transistors LTPS-TFT. T2 is used as a driving transistor to drive T3, which can not only improve the screen flicker problem but also avoid excessive cost.

[0095] When using OXIDE-TFT, a light-shielding layer needs to be provided underneath. The light-shielding layer can be made of an opaque material, such as metal, metal oxide, black polymer or other opaque materials.

[0096] In some exemplary embodiments, the storage capacitor includes a first electrode and a second electrode, and the thin film transistor includes an active layer, a gate, a source electrode, and a drain electrode.

[0097] In some exemplary embodiments, the driving structure layer includes a plurality of gate lines and a plurality of data lines distributed in an array, the plurality of gate lines and the plurality of data lines intersect each other to form a plurality of pixel regions, and a pixel circuit corresponding to one pixel is disposed in each pixel region.

[0098] The driving structure layer may further include a control circuit configured to control the data driving subcircuit to apply a data signal and control the gate driving subcircuit to apply a scan signal. An example of the control circuit is a timing control circuit (T-con).

[0099] In some exemplary embodiments, the pixel circuit may include a driving subcircuit, a data writing subcircuit, a compensation subcircuit, and a storage subcircuit, and may further include a light emitting control subcircuit, a reset circuit, etc. as needed.

[0100] In some exemplary embodiments, the driving structure layer includes a conductive material, such as gold (Au), silver (Ag), copper (Cu), aluminum (Al), molybdenum (Mo), magnesium (Mg), tungsten (W) and alloy materials composed of combinations of the above metals; or a conductive metal oxide material, such as indium tin oxide (ITO), indium zinc oxide (IZO), zinc oxide (ZnO), aluminum zinc oxide (AZO), etc.

[0101] In some exemplary embodiments, the driving structure layer includes an inorganic insulating material, such as silicon oxide, silicon nitride, silicon oxynitride, or other silicon oxide, silicon nitride, or includes aluminum oxide, titanium nitride, or other metal nitride insulating materials; it may also include organic insulating materials, such as polyimide (PI), acrylate, epoxy resin, polymethyl methacrylate (PMMA), and other organic insulating materials.

[0102] In some exemplary embodiments, as shown in Figure 7, the light-emitting device 3 includes a first electrode layer 3-1, a hole injection layer 3-8 (HIL), a hole transport layer 3-7 (HTL), an electron blocking layer 3-4 (EBL), a light-emitting layer 3-2 (EML), a hole blocking layer 3-9 (HBL), an electron transport layer 3-6 (ETL), an electron injection layer 3-5 (EIL) and a second electrode layer 3-3, which are stacked in sequence. The thickness of the electron transport layer 3-6 is greater than the thickness of the hole blocking layer 3-9, and the thickness of the hole transport layer 3-7 is greater than the thickness of the electron blocking layer 3-4.

[0103] The light-emitting layer 3-2 includes a red light-emitting layer, a green light-emitting layer and a blue light-emitting layer, etc.; the red light-emitting layer contains a host material and a phosphorescent dopant, wherein the host material contains at least one material. When the host contains two materials, it is an excimer complex or an isomer or a homologue, which is beneficial to improving the utilization rate of excitons and thus improving the efficiency of the device; the green light-emitting layer contains a host material and a phosphorescent dopant. The host material contains at least two materials, which can be an excimer complex or an isomer, which is beneficial to improving the utilization rate of excitons and thus improving the efficiency of the device; the blue light-emitting layer contains a host material and a guest material. The host material is at least one material containing anthracene, and the guest material is a fluorescent or phosphorescent dopant. When the host material contains two materials, the two materials are isomers or homologues, or they can be excimer complexes.

[0104] The first electrode layer 3-1 can be an anode, and the material is a high work function electrode material, such as transparent oxide ITO, IZO; it can also be a composite electrode formed by ITO / Ag / ITO, Ag / IZO, CNT / ITO, CNT / IZO, GO / ITO, GO / IZO, etc.

[0105] The second electrode layer 3 - 3 may be a cathode, and is preferably made of a material with a low work function so as to easily inject electrons into the organic material layer, and has both good light transmittance and electrical conductivity. Its materials include: metals, metal oxides, metal alloys, such as aluminum (Al), silver (Ag), gold (Au), magnesium (Mg), calcium (Ca), ytterbium (Yb), indium (In), lithium (Li), potassium (K), sodium (Na), tin (Sn), titanium (Ti), lead (Pb), samarium (Sm), yttrium (Y), indium tin oxide (ITO), magnesium silver alloy (Mg:Ag), ytterbium gold alloy (Yb:Au), ytterbium silver alloy (Yb:Ag), lithium aluminum alloy (Li:Al), lithium calcium magnesium alloy (Li:Ca:Al), etc.; and laminated materials, such as magnesium / aluminum (Mg / Al), magnesium / silver (Mg / Ag), aluminum / silver (Al / Ag), aluminum / gold (Al / Au), ytterbium / gold (Yb / Au), ytterbium / silver (Yb / Ag), calcium / magnesium (Ca / Mg), calcium / silver (Ca / Ag), barium / silver (Ba / Ag), etc., without specific limitation.

[0106] The hole injection layer 3-8, the hole transport layer 3-7, the electron blocking layer 3-4, the light emitting layer 3-2, the hole blocking layer 3-9, the electron transport layer 3-6 and the electron injection layer 3-5 are light emitting functional layers.

[0107] The hole injection layer 3-8 can be an inorganic oxide, such as molybdenum oxide, titanium oxide, vanadium oxide, rhenium oxide, ruthenium oxide, chromium oxide, zirconium oxide, hafnium oxide, tantalum oxide, silver oxide, tungsten oxide, manganese oxide, etc.; it can also be a dopant of a strong electron-withdrawing system, such as F4TCNQ, HATCN, etc.; P-type doping can also be performed on the hole transport material, and the thickness of this layer is 5nm to 20nm, and the hole injection layer 3-8 is formed by co-evaporation.

[0108] The hole transport layer 3-7 material has good hole transport properties and can be an aromatic amine or carbazole material, such as NPB, TPD, BAFLP, DFLDPBi, and the like.

[0109] The electron blocking layer 3-4 also has good hole transport properties and can be made of aromatic amine or carbazole materials, such as CBP, PCzPA, and the like.

[0110] The hole blocking layer 3-9 and the electron transport layer 3-6 are generally aromatic heterocyclic compounds, such as imidazole derivatives such as benzimidazole derivatives, imidazopyridine derivatives, and benzimidazolephenanthridine derivatives; oxazine derivatives such as pyrimidine derivatives and triazine derivatives; quinoline derivatives, isoquinoline derivatives, phenanthroline derivatives and other compounds containing a nitrogen six-membered ring structure, and also include compounds having phosphine oxide-based substituents on the heterocyclic ring, such as OXD-7, TAZ, p-EtTAZ), BPhen, BCP, etc.

[0111] The electron injection layer 3-5 is preferably made of a material capable of transporting electrons and having the effect of injecting electrons from the cathode. It has excellent thin film forming ability and is generally an alkali metal or metal, such as LiF, Yb, Mg, Ca or their compounds.

[0112] By setting the thickness of the electron transport layer 3-6 to be greater than that of the hole blocking layer 3-9, large obstruction is avoided, which slows down the movement of electrons; by setting the thickness of the hole transport layer 3-7 to be greater than that of the electron blocking layer 3-4, the blue light effect is ensured; by adjusting the thickness of the light-emitting functional layer, the microcavity effect is strengthened as a whole, and the light extraction efficiency is improved.

[0113] In some exemplary embodiments, as shown in Figure 8, the difference between the lowest unoccupied molecular orbital energy level of the hole blocking layer 3-9 and the lowest unoccupied molecular orbital energy level of the electron transport layer 3-6 is greater than or equal to 0.4eV and less than or equal to 1eV; the difference between the highest occupied molecular orbital energy level of the hole transport layer 3-7 and the highest occupied molecular orbital energy level of the electron blocking layer 3-4 is greater than or equal to -0.5eV and less than or equal to 0.3eV; the difference between the highest occupied molecular orbital energy level of the main material of the light-emitting layer 3-2 and the highest occupied molecular orbital energy level of the electron blocking layer 3-4 is less than or equal to 0.3eV; the difference between the highest occupied molecular orbital energy level of the hole blocking layer 3-9 and the highest occupied molecular orbital energy level of the main material of the light-emitting layer 3-2 is greater than or equal to 0.1eV.

[0114] The HOMO energy level is the highest occupied molecular orbital energy level, the LUMO energy level is the lowest unoccupied molecular orbital energy level, and Host is the main material of the light-emitting layer 3-2; by limiting 0.4eV≤LUMO(HBL)-LUMO(ETL)≤1eV, the energy level barrier between HBL and ETL is increased, and the electron transmission rate is slowed down; by limiting -0.5eV≤HOMO(HTL)-HOMO(EBL)≤0.3eV, the reason for slow hole transmission due to the energy level barrier is eliminated; by limiting HOMO(Host)-HOMO(EBL)≤0.3eV, the energy level barrier (gap) is reduced and the hole transmission efficiency is increased; by limiting HOMO(HBL)-HOMO(Host)≥0.1eV, it is beneficial to the blocking of holes; by limiting the energy level relationship of the light-emitting functional layer, the overall energy level barrier is reduced, ensuring smooth transmission and ensuring the light output effect.

[0115] In some exemplary embodiments, the excited triplet energy level of the electron blocking layer 3-4 is greater than the excited triplet energy level of the main material of the light-emitting layer 3-2; the excited triplet energy level of the hole blocking layer 3-9 is greater than the excited triplet energy level of the main material of the light-emitting layer 3-2; the excited triplet energy level of the electron transport layer 3-6 is greater than the excited triplet energy level of the hole blocking layer 3-9; the excited triplet energy level of the hole transport layer 3-7 is greater than the excited triplet energy level of the electron blocking layer 3-4; the excited triplet energy level of the electron transport layer 3-6 is greater than the excited triplet energy level of the hole blocking layer 3-9.

[0116] The T1 energy level is the excited triplet energy level. By limiting T1(EBL)>T1(Host), it is beneficial to confine the excitons in the light-emitting layer 3-2, thereby improving the utilization rate of the excitons. By limiting T1(HBL)>T1(Host), it is beneficial to confine the excitons in the light-emitting layer 3-2, thereby preventing energy back transfer and improving the utilization rate of the excitons. By limiting T1(ETL)>T1(HBL), it is prevented that the HBL is too thin and the holes pass through the HBL to cause electron quenching. The ETL can block holes at the same time. By limiting T1(HTL)>T1(EBL), it is prevented that the EBL is too thin and the holes pass through the EBL to cause electron quenching. BL can block electrons at the same time; by limiting T1(ETL)>T1(HBL), holes are prevented from passing through the HBL and causing electron quenching due to the HBL being too thin, and the ETL can block holes at the same time; by limiting T1(HTL)>T1(EBL), the EBL is prevented from being too thin and causing electron quenching due to the EBL passing through the EBL, and the EBL can block electrons at the same time; the performance of the light-emitting device 3 is optimized, and high-quality display of the device is comprehensively realized; the above-mentioned energy level relationship is met, and the carrier accumulation at the EBL interface is reduced; in addition, the excitons can be effectively confined in the light-emitting layer 3-2, and the energy of the light-emitting layer 3-2 is prevented from diffusing to the surrounding light-emitting functional layers, which can further improve the luminous efficiency and life of the device.

[0117] In some embodiments, the mobility of the hole blocking layer 3-9 is greater than or equal to 10 -9 cm 2 / V·s, and less than or equal to 10 -7 cm 2 / V·s; the mobility of the electron transport layer 3-6 is greater than or equal to 10 -7 cm 2 / V·s, and less than or equal to 10 -5 cm 2 / V·s; the mobility of the hole transport layer 3-7 is greater than or equal to 10 -6 cm 2 / V·s, and less than or equal to 10 - 4 cm 2 / V·s; the mobility of the electron blocking layer 3-4 is greater than or equal to 10 -7 cm 2 / V·s, and less than or equal to 10 -4 cm 2 / V·s.

[0118] Mobility can be tested using the SCLC (space charge limited current) method. The mobility of HBL is less than that of ETL. Mobility limitation slows down the transfer of electrons. HTL and EBL can contain electron-donating groups such as aromatic amines to improve their mobility. The more electron-donating groups there are, the faster the mobility. ETL and HBL can contain electron-withdrawing groups such as triazine and -CN. The more electron-withdrawing groups there are, the faster the mobility.

[0119] In some exemplary embodiments, as shown in Figure 9, the light-emitting device 3 includes a first electrode layer 3-1, a hole injection layer 3-8, a first hole transport layer 3-7-1, a first electron blocking layer 3-4-1, a first light-emitting layer 3-2-1, a first hole blocking layer 3-9-1, a first electron transport layer 3-6-1, an N-type charge generation layer 3-10-2, a P-type charge generation layer 3-10-1, a second hole transport layer 3-7-2, a second electron blocking layer 3-4-2, a second light-emitting layer 3-2-2, a second hole blocking layer 3-9-2, a second electron transport layer 3-6-2, an electron injection layer 3-5 and a second electrode layer 3-3, which are stacked in sequence. The thickness of the N-type charge generation layer 3-10-2 is greater than the thickness of the first electron blocking layer 3-4-1, and the thickness of the P-type charge generation layer 3-10-1 is greater than the thickness of the second electron blocking layer 3-4-2.

[0120] By setting a first hole transport layer 3-7-1, a second hole transport layer 3-7-2, a first electron blocking layer 3-4-1, a second electron blocking layer 3-4-2, a first hole blocking layer 3-9-1, a second hole blocking layer 3-9-2, a first electron transport layer 3-6-1, a second electron transport layer 3-6-2, a P-type charge generation layer 3-10-1 and an N-type charge generation layer 3-10-2, a tandem device connection is achieved.

[0121] The charge generation layer includes a P-type charge generation layer 3-10-1 and an N-type charge generation layer 3-10-2. Both the P-type charge generation layer 3-10-1 and the N-type charge generation layer 3-10-2 may contain dopants. The dopant of the P-type charge generation layer 3-10-1 may be HATCN, F4TCNQ, etc., and the dopant of the N-type charge generation layer 3-10-2 may be an alkali metal such as lithium (Li), sodium (Na), potassium (K) or cesium (Cs), or an alkali metal or alkaline earth metal and its oxide such as magnesium (Mg), strontium (Sr), barium (Ba) or radium (Ra); the N-type charge generation layer 3-10-2 can inject electrons into the first light-emitting layer; the P-type charge generation layer 3-10-1 can inject holes into the second light-emitting layer; the charge generation layer is a conductive material, and the electron blocking layer is an organic material. By setting the thickness of the charge generation layer to be greater than the thickness of the electron blocking layer, the driving voltage is reduced.

[0122] In some exemplary embodiments, the absolute value of the difference between the highest occupied molecular orbital energy level of the P-type charge generation layer 3-10-1 (PCGL) and the highest occupied molecular orbital energy level of the second hole transport layer 3-7-2 (HTL2) is less than or equal to 0.3 eV; the absolute value of the difference between the lowest unoccupied molecular orbital energy level of the N-type charge generation layer 3-10-2 (NCGL) and the lowest unoccupied molecular orbital energy level of the first hole blocking layer 3-9-1 is less than or equal to 0.5 eV; the dipole moment of the N-type charge generation layer 3-10-2 is greater than or equal to 4 Debye.

[0123] By limiting HOMO|PCGL-HTL2|≤0.3eV, the energy level transmission barrier is reduced, which facilitates hole transmission. By limiting LUMO|NCGL-HBL1|≤0.5eV, the energy level transmission barrier is also reduced. By limiting the dipole moment of NCGL to greater than 4Debye, it is ensured that CGL has good electron injection characteristics. The performance of the light-emitting device 3 is optimized to comprehensively achieve high-quality display of the device.

[0124] In some exemplary embodiments, the ratio of the mobility of the first hole blocking layer 3-9-1 to the mobility of the second hole blocking layer 3-9-2 is greater than or equal to 10. -1 cm 2 / V·s, and less than or equal to 10cm 2 / V·s; the ratio of the mobility of the first hole transport layer 3-7-1 to the mobility of the second hole transport layer 3-7-2 is greater than or equal to 10 - 1 cm 2 / V·s, and less than or equal to 10cm 2 / V·s; the ratio of the mobility of the first electron blocking layer 3-4-1 to the mobility of the second electron blocking layer 3-4-2 is greater than or equal to 10 -1 cm 2 / V·s, and less than or equal to 10cm 2 / V·s; the ratio of the mobility of the first electron transport layer 3-6-1 to the mobility of the second electron transport layer 3-6-2 is greater than or equal to 10 - 1 cm 2 / V·s, and less than or equal to 10cm 2 / V·s.

[0125] By limiting the difference in film layer mobility, there is no obvious difference in the recombination areas of the two light-emitting layers 3-2, thus avoiding color difference.

[0126] In some exemplary embodiments, as shown in Figure 2, the encapsulation layer 4 includes a first inorganic layer 4-1, an organic layer 4-2, and a second inorganic layer 4-3 that are stacked; a touch layer 7 is provided between the encapsulation layer 4 and the black matrix 5; and a protective layer 8 is provided on the side of the color resist block 6 away from the base substrate 1.

[0127] The encapsulation layer 4 includes a first inorganic layer 4-1, an organic layer 4-2, and a second inorganic layer 4-3, which play the role of isolating water and oxygen and making it flat. The first inorganic layer 4-1 and the second inorganic layer 4-3 may include at least one inorganic insulating material selected from aluminum oxide, titanium oxide, tantalum oxide, hafnium oxide, zinc oxide, silicon oxide, silicon nitride and silicon oxynitride; the organic layer 4-2 can reduce the internal stress of the first inorganic layer 4-1 and the second inorganic layer 4-3. The organic layer 4-2 may include a polymer material, including polyethylene terephthalate, polyethylene naphthalate, polycarbonate, polyimide, polyethylene sulfonate, polyoxymethylene, polyarylate, HMDSO, acrylic resin or any combination thereof.

[0128] The touch layer 7 realizes the touch function of the display panel, and can be manufactured into a flexible touch panel using a flexible multi-layer integrated touch (F-MLOC) process.

[0129] COE is a color filter set on the light-emitting side of the light-emitting device 3, including a black matrix 5, a color block 6 and a protective layer 8. The black matrix 5 is a black opaque material that can absorb external light and thus improve the contrast; the color block 6 is an optical filter that expresses color. It can accurately select a small range of light waves to pass through and reflect other undesirable bands. It is composed of chemical dyes and resins; the protective layer 8 can be made of acrylic resin material, which mainly plays the role of protecting the color filter and flattening the surface.

[0130] The transmission spectrum of the color block 6 overlaps with the emission spectrum of the light emitting device 3 by more than 80%, and the transmission spectrum covers the red light band of 580nm to 720nm, the blue light band of 430nm to 480nm, and the green light band of 500nm to 600nm.

[0131] An embodiment of the present application

[0132] This embodiment is exemplary. The COE in the present disclosure is used to manufacture a display panel. Comparative Example 1 uses a POL to manufacture a display panel. A spectrum test is performed on the display panel, as shown in FIG10 . It can be seen that the COE can narrow the spectrum. A color gamut test is performed on the display panel, as shown in FIG11 and Table 1. It can be seen that the COE can increase the color gamut.

[0133] Table 1 Color gamut comparison table

[0134] In some exemplary embodiments of the present disclosure, a display device is provided, comprising the display panel as described in any of the above embodiments.

[0135] The display device can be a smart phone, a notebook, a car display screen, a TV, a tablet, a digital camera, etc. The effect produced by the display device is the same as that produced by the above-mentioned display panel, and will not be described in detail here.

[0136] Those skilled in the art should understand that the discussion of any of the above embodiments is merely illustrative and is not intended to imply that the scope of the present disclosure (including the claims) is limited to these examples. Within the scope of the present disclosure, the technical features in the above embodiments or different embodiments may be combined, the steps may be implemented in any order, and there are many other variations of the different aspects of the embodiments of the present disclosure as described above, which are not provided in detail for the sake of simplicity.

[0137] In the embodiments of the present disclosure, the first electrode may be the second electrode, the second electrode may be the first electrode, or the first electrode may be the first electrode and the second electrode may be the second electrode. The functions of the "first electrode" and "second electrode" may be interchanged when using transistors with opposite polarity or when the direction of current changes during circuit operation. Therefore, in this specification, the terms "first electrode" and "second electrode" may be interchanged.

[0138] In the embodiments of the present disclosure, "film" and "layer" can be interchanged. For example, sometimes "conductive layer" can be replaced with "conductive film". Similarly, sometimes "insulating film" can be replaced with "insulating layer". The proportions of the drawings in the embodiments of the present disclosure can be used as a reference in the actual process, but are not limited to this. For example: the width-to-length ratio of the channel, the thickness and spacing of each film layer can be adjusted according to actual needs. The number of pixels in the display panel and the number of sub-pixels in each pixel are not limited to the numbers shown in the figures. The drawings described in the embodiments of the present disclosure are only structural schematic diagrams, and a method in the embodiments of the present disclosure is not limited to the shapes or values ​​shown in the drawings.

[0139] In the embodiments of the present disclosure, the triangles, rectangles, trapezoids, pentagons or hexagons are not in the strict sense, but may be approximate triangles, rectangles, trapezoids, pentagons or hexagons, etc. There may be some small deformations caused by tolerances, and there may be chamfers, arc edges and deformations.

[0140] In addition, when details are set forth to describe exemplary embodiments of the present disclosure, it will be apparent to those skilled in the art that the present disclosure embodiments can be implemented without or with variations in these details. Therefore, these descriptions should be considered illustrative rather than restrictive.

[0141] In some embodiments of the present disclosure, a method for manufacturing a display panel as described in any of the above embodiments is provided, comprising: forming a pixel circuit and a light-emitting device 3 on one side of a base substrate 1 by a graphical process; forming an encapsulation layer 4 on a side of the light-emitting device 3 away from the base substrate 1; and forming a black matrix 5 and a color resist block 6 on a side of the encapsulation layer 4 away from the substrate by a graphical process.

[0142] In summary, the present disclosure provides a display panel, a manufacturing method thereof, and a display device, wherein the display panel includes a substrate; a pixel defining layer, located on one side of the substrate, including a plurality of first openings; a plurality of light-emitting devices, arranged corresponding to the first openings; an encapsulation layer, located on a side of the encapsulation layer away from the substrate, including a plurality of second openings, the second openings being arranged in a one-to-one correspondence with the first openings; the bottom edge of the first opening and the bottom edge of the second opening on the same side thereof are angled θ1, and the bottom edge of the second opening on the opposite side thereof are angled θ2, and θ1 and θ2 satisfy Multiple color blocks are set corresponding to the second opening, θ1 is the angle at which the device light is affected by the same side of the black matrix, and θ2 is the angle at which the device light is affected by the opposite side of the black matrix. While taking into account the light output from the front viewing angle, the light output from the side viewing angle of the light-emitting device is adjusted to avoid the opening being too large and the distance being too close, which will result in less absorption of natural light, a large reflection effect, and an insignificant anti-reflection effect. At the same time, avoid the opening being too small and the distance being too far, which will result in more absorption of the emitted light of the light-emitting device, more light absorption from the side viewing angle, serious color deviation, and affected light output efficiency. The display panel, its manufacturing method, and display device have a simple structure and are easy to manufacture. They can reduce natural light interference while improving the light output efficiency of the display panel, ensure the brightness effect at the side viewing angle, and reduce power consumption.

[0143] The "patterning process" referred to in the embodiments of this disclosure includes processes such as photoresist coating, mask exposure, development, etching, and photoresist stripping for metal, inorganic, or transparent conductive materials, and includes processes such as organic material coating, mask exposure, and development for organic materials. Deposition can be performed by any one or more of sputtering, evaporation, and chemical vapor deposition; coating can be performed by any one or more of spray coating, spin coating, and inkjet printing; and etching can be performed by any one or more of dry etching and wet etching, without limitation.

[0144] Those skilled in the art should understand that the discussion of any of the above embodiments is merely illustrative and is not intended to imply that the scope of the present disclosure (including the claims) is limited to these examples. Within the scope of the present disclosure, the technical features in the above embodiments or different embodiments may be combined, the steps may be implemented in any order, and there are many other variations of the different aspects of the embodiments of the present disclosure as described above, which are not provided in detail for the sake of simplicity.

[0145] In addition, to simplify the description and discussion, and in order not to obscure the embodiments of the present disclosure, known power / ground connections to other components may or may not be shown in the provided figures. In addition, the devices may be shown in the form of block diagrams to avoid obscuring the embodiments of the present disclosure, and this also takes into account the fact that the details of the implementation of these block diagram devices are highly dependent on the platform on which the embodiments of the present disclosure are to be implemented (i.e., these details should be fully within the purview of those skilled in the art). Where specific details are set forth to describe exemplary embodiments of the present disclosure, it will be apparent to those skilled in the art that the embodiments of the present disclosure may be implemented without these specific details or with variations in these specific details. Therefore, these descriptions should be considered illustrative and not restrictive.

[0146] Although the present disclosure has been described in conjunction with specific embodiments thereof, many substitutions, modifications, and variations of these embodiments will be apparent to those skilled in the art based on the foregoing description. The present disclosure is intended to encompass all such substitutions, modifications, and variations that fall within the broad scope of the appended claims. Therefore, any omissions, modifications, equivalent substitutions, improvements, etc. made within the spirit and principles of the present disclosure are intended to be included within the scope of protection of the present disclosure.

Claims

1. A display panel, comprising: substrate; A pixel defining layer, located on one side of the base substrate, comprising a plurality of first openings; a plurality of light-emitting devices, arranged corresponding to the first openings; an encapsulation layer, located on a side of the light-emitting device away from the substrate; The black matrix is ​​located on a side of the encapsulation layer away from the base substrate, and includes a plurality of second openings, wherein the second openings are arranged in a one-to-one correspondence with the first openings; the angle between the bottom edge of the first opening and the bottom edge of the second opening on the same side is θ1, and the angle between the bottom edge of the first opening and the top edge of the second opening on the opposite side is θ2, and the angles θ1 and θ2 satisfy A plurality of color-resistance blocks are arranged corresponding to the second openings.

2. The display panel according to claim 1, wherein: The orthographic projection of the second opening on the base substrate covers the orthographic projection of the first opening on the base substrate.

3. The display panel according to claim 1, wherein: The slope angle of the black matrix is ​​30° to 70°, the thickness of the black matrix is ​​1 μm to 3 μm, the slope angle of the pixel defining layer is 20° to 60°, and the thickness of the color resist block is 2 μm to 5 μm.

4. The display panel according to claim 1, wherein: A driving structure layer is provided between the base substrate and the pixel defining layer. The driving structure layer includes a plurality of pixel circuits. Each of the pixel circuits includes at least seven thin film transistors. The at least seven thin film transistors include low-temperature polysilicon thin film transistors and oxide thin film transistors.

5. The display panel according to claim 1, wherein: The light emitting device comprises a first electrode layer, a hole injection layer, a hole transport layer, an electron blocking layer, a light emitting layer, a hole blocking layer, an electron transport layer, an electron injection layer and a second electrode layer, which are sequentially stacked. The thickness of the electron transport layer is greater than that of the hole blocking layer, and the thickness of the hole transport layer is greater than that of the electron blocking layer. The display panel according to claim 5 , wherein: The difference between the lowest unoccupied molecular orbital energy level of the hole blocking layer and the lowest unoccupied molecular orbital energy level of the electron transport layer is greater than or equal to 0.4 eV and less than or equal to 1 eV; The difference between the highest occupied molecular orbital energy level of the hole transport layer and the highest occupied molecular orbital energy level of the electron blocking layer is greater than or equal to -0.5 eV and less than or equal to 0.3 eV; The difference between the highest occupied molecular orbital energy level of the host material of the light-emitting layer and the highest occupied molecular orbital energy level of the electron blocking layer is less than or equal to 0.3 eV; and / or The difference between the highest occupied molecular orbital energy level of the hole blocking layer and the highest occupied molecular orbital energy level of the host material of the light-emitting layer is greater than or equal to 0.1 eV.

7. The display panel according to claim 5, wherein: The excited triplet energy level of the electron blocking layer is greater than the excited triplet energy level of the host material of the light-emitting layer; The excited triplet energy level of the hole blocking layer is greater than the excited triplet energy level of the host material of the light-emitting layer; The excited triplet energy level of the electron transport layer is greater than the excited triplet energy level of the hole blocking layer; The excited triplet energy level of the hole transport layer is greater than the excited triplet energy level of the electron blocking layer; and / or The excited triplet energy level of the electron transport layer is greater than the excited triplet energy level of the hole blocking layer.

8. The display panel according to claim 5, wherein: The mobility of the hole blocking layer is greater than or equal to 10 -9 cm 2 / V·s, and less than or equal to 10 -7 cm 2 / V·s; The mobility of the electron transport layer is greater than or equal to 10 -7 cm 2 / V·s, and less than or equal to 10 -5 cm 2 / V·s; The mobility of the hole transport layer is greater than or equal to 10 -6 cm 2 / V·s, and less than or equal to 10 -4 cm 2 / V·s; and / or The mobility of the electron blocking layer is greater than or equal to 10 -7 cm 2 / V·s, and less than or equal to 10 -4 cm 2 / V·s.

9. The display panel according to claim 1, wherein: The light-emitting device comprises a first electrode layer, a hole injection layer, a first hole transport layer, a first electron blocking layer, a first light-emitting layer, a first hole blocking layer, a first electron transport layer, an N-type charge generation layer, a P-type charge generation layer, a second hole transport layer, a second electron blocking layer, a second light-emitting layer, a second hole blocking layer, a second electron transport layer, an electron injection layer and a second electrode layer, which are stacked in sequence. The thickness of the N-type charge generation layer is greater than the thickness of the first electron blocking layer, and the thickness of the P-type charge generation layer is greater than the thickness of the second electron blocking layer.

10. The display panel according to claim 9, wherein: The absolute value of the difference between the highest occupied molecular orbital energy level of the P-type charge generation layer and the highest occupied molecular orbital energy level of the second hole transport layer is less than or equal to 0.3 eV; the absolute value of the difference between the lowest unoccupied molecular orbital energy level of the N-type charge generation layer and the lowest unoccupied molecular orbital energy level of the first hole blocking layer is less than or equal to 0.5 eV; the dipole moment of the N-type charge generation layer is greater than or equal to 4 Debye.

11. The display panel according to claim 9, wherein: The ratio of the mobility of the first hole blocking layer to the mobility of the second hole blocking layer is greater than or equal to 10- 1 cm 2 / V·s, and less than or equal to 10cm 2 / V·s; The ratio of the mobility of the first hole transport layer to the mobility of the second hole transport layer is greater than or equal to 10- 1 cm 2 / V·s, and less than or equal to 10cm 2 / V·s; The ratio of the mobility of the first electron blocking layer to the mobility of the second electron blocking layer is greater than or equal to 10- 1 cm 2 / V·s, and less than or equal to 10cm 2 / V·s; and / or The ratio of the mobility of the first electron transport layer to the mobility of the second electron transport layer is greater than or equal to 10 - 1 cm 2 / V·s, and less than or equal to 10cm 2 / V·s.

12. The display panel according to claim 1, wherein: The encapsulation layer includes a first inorganic layer, an organic layer, and a second inorganic layer that are stacked; a touch layer is provided between the encapsulation layer and the black matrix; and a protective layer is provided on a side of the color resist block away from the base substrate.

13. The display panel according to claim 1, wherein: The substrate includes a flexible base layer, a barrier layer and a buffer layer, wherein: The material of the flexible base layer includes one or more of polyimide PI, polyethylene terephthalate PET and polycarbonate PC; The barrier layer has a size ranging from 5000 angstroms to 6000 angstroms; and / or The buffer layer has a size ranging from 3500 angstroms to 4500 angstroms.

14. The display panel according to claim 4, wherein: Each of the pixel circuits further includes a storage capacitor; The storage capacitor includes a first plate and a second plate.

15. The display panel according to claim 4, wherein: The driving structure layer includes a plurality of gate lines and a plurality of data lines distributed in an array. The plurality of gate lines and the plurality of data lines intersect with each other to form a plurality of pixel areas. A pixel circuit of a corresponding pixel is arranged in each pixel area.

16. The display panel according to claim 4, wherein: The driving structure layer further includes a control circuit, which is configured to control the data driving subcircuit to apply a data signal and control the gate driving subcircuit to apply a scan signal. The control circuit is a timing control circuit T-con.

17. The display panel according to claim 4, wherein: The pixel circuit may include a driving subcircuit, a data writing subcircuit, a compensation subcircuit, a storage subcircuit, a light emitting control subcircuit, and a reset circuit.

18. The display panel according to claim 5, wherein: The light-emitting layer includes a red light-emitting layer, a green light-emitting layer and a blue light-emitting layer; The first electrode layer is an anode; The second electrode layer is a cathode; and / or, The hole injection layer, the hole transport layer, the electron blocking layer, the light emitting layer, the hole blocking layer, the electron transport layer and the electron injection layer are light emitting functional layers.

19. A display device comprising: A display panel as claimed in any one of claims 1 to 18.

20. A method for manufacturing a display panel, the method being applied to the display panel according to any one of claims 1 to 18, comprising: forming a pixel circuit and a light-emitting device on one side of the base substrate; forming an encapsulation layer on a side of the light emitting device away from the substrate; and A black matrix and a color resist block are formed on a side of the encapsulation layer away from the substrate.

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