Display device

Abstract

A display device according to an embodiment may include a pixel including a first sub-pixel. The first sub-pixel may include: a first pixel electrode; and a first light-emitting element and a second light-emitting element that are disposed on the first pixel electrode and each include a body portion, including a first semiconductor layer, an active layer, and a second semiconductor layer, and a bonding electrode disposed on the lower surface of the body portion. At least one of the first light-emitting element or the second light-emitting element may be disposed inclined on the first pixel electrode.

Description

display device

[0001] Embodiments of the present invention relate to a display device.

[0002] As the information society develops, the demand for display devices for displaying images is increasing in various forms. In response, various types of display devices, including light-emitting displays, are being developed. Light-emitting displays contain pixels containing light-emitting elements.

[0003] The problem to be solved by the present invention is to provide a display device capable of improving the light efficiency of a pixel including a light-emitting element.

[0004] The tasks of the present invention are not limited to the technical tasks mentioned above, and other technical tasks not mentioned will be clearly understood by those skilled in the art from the description below.

[0005] A display device according to one embodiment may include a pixel including a first sub-pixel. The first sub-pixel may include a first pixel electrode; and a first light-emitting element and a second light-emitting element disposed on the first pixel electrode, each of the first light-emitting element and the second light-emitting element including a main body portion including a first semiconductor layer, an active layer, and a second semiconductor layer, and a bonding electrode disposed on a lower surface of the main body portion. At least one of the first light-emitting element and the second light-emitting element may be disposed at an angle on the first pixel electrode.

[0006] In one embodiment, each of the first light-emitting element and the second light-emitting element may include a light-emitting surface corresponding to the upper surface of the main body.

[0007] In one embodiment, the light-emitting surfaces of the first light-emitting element and the second light-emitting element may be inclined toward the center of the first sub-pixel.

[0008] In one embodiment, the bonding electrodes of each of the first light-emitting element and the second light-emitting element may be arranged to be offset from a portion close to the outer edge of the first sub-pixel on the lower surface of the main body.

[0009] In one embodiment, the display device may further include a light-blocking layer surrounding a light-emitting area in which the first light-emitting element and the second light-emitting element are arranged; and a reflective film arranged on the light-blocking layer.

[0010] In one embodiment, the light-emitting surfaces of the first light-emitting element and the second light-emitting element may be inclined toward the outer edge of the first sub-pixel.

[0011] In one embodiment, the bonding electrode of each of the first light-emitting element and the second light-emitting element may be arranged to be offset from a portion close to the center of the first sub-pixel on the lower surface of the main body.

[0012] In one embodiment, at least one of the bonding electrodes of the first light-emitting element and the second light-emitting element may have a thickness that gradually changes as it approaches the center or periphery of the first sub-pixel.

[0013] In one embodiment, at least one of the main body portions of the first light-emitting element and the second light-emitting element can be inclined with respect to the first pixel electrode and come into contact with the first pixel electrode.

[0014] In one embodiment, the bonding electrodes of each of the first light-emitting element and the second light-emitting element may be disposed entirely on the lower surface of the main body.

[0015] In one embodiment, the first sub-pixel may further include a third light-emitting element disposed on the first pixel electrode and between the first light-emitting element and the second light-emitting element.

[0016] In one embodiment, the third light-emitting element includes a body portion including a first semiconductor layer, an active layer, and a second semiconductor layer, and a bonding electrode disposed on a lower surface of the body portion, and may be vertically disposed on the first pixel electrode.

[0017] In one embodiment, the third light-emitting element includes a light-emitting surface corresponding to an upper surface of the main body, and the light-emitting surface of the third light-emitting element may be arranged toward an upper portion of the first sub-pixel.

[0018] In one embodiment, the first sub-pixel may further include a first light conversion layer disposed on the first light-emitting element and the second light-emitting element.

[0019] In one embodiment, the first light conversion layer may include first wavelength conversion particles for converting light emitted from the first light-emitting element and the second light-emitting element into light of a different color.

[0020] In one embodiment, the upper surface of the first light conversion layer may include a curved surface in the shape of a lens.

[0021] In one embodiment, each of the first light-emitting element and the second light-emitting element may further include a first reflective film disposed between the main body and the bonding electrode.

[0022] In one embodiment, each of the first light-emitting element and the second light-emitting element may further include a second reflective film surrounding a side surface of the first semiconductor layer, the active layer, and the second semiconductor layer.

[0023] In one embodiment, the pixel further includes a second sub-pixel including a second pixel electrode and at least one light-emitting element disposed on the second pixel electrode; and a third sub-pixel including a third pixel electrode and at least one light-emitting element disposed on the third pixel electrode, wherein the first sub-pixel, the second sub-pixel, and the third sub-pixel may be sequentially disposed along a first direction.

[0024] In one embodiment, at least one of the first light-emitting element and the second light-emitting element of the first sub-pixel may be arranged at an angle on the first pixel electrode so as to face the center of the unit pixel area in which the pixel is arranged, and at least one light-emitting element of the third sub-pixel may be arranged at an angle on the third pixel electrode so as to face the center of the unit pixel area.

[0025] Specific details of other embodiments are included in the detailed description and drawings.

[0026] A display device according to embodiments includes a sub-pixel including a pixel electrode and a light-emitting element arranged at an angle on the pixel electrode. In some embodiments, the light-emitting element may be inclined toward the center of the sub-pixel or the center of a pixel including the sub-pixel, or may be inclined toward a reflective film arranged at the periphery of the sub-pixel. According to embodiments, the light efficiency of the sub-pixel or pixel may be improved.

[0027] The effects according to the embodiments are not limited to those exemplified above, and more diverse effects are included in this specification.

[0028] Figure 1 is a perspective view showing a display device according to one embodiment.

[0029] FIG. 2 is a layout diagram showing a display device according to one embodiment.

[0030] FIG. 3 is a block diagram showing a display device according to one embodiment.

[0031] Fig. 4 is an equivalent circuit diagram showing a sub-pixel according to one embodiment.

[0032] FIG. 5 is a layout diagram showing pixels of a display area according to one embodiment.

[0033] Fig. 6 is a cross-sectional view showing an example of a cross-section of a display panel corresponding to line I1-I1' of Fig. 5.

[0034] Figure 7 is a cross-sectional view showing in detail an example of area A of Figure 6.

[0035] Fig. 8 is a cross-sectional view showing an example of a cross-section of a display panel corresponding to line I1-I1' of Fig. 5.

[0036] Fig. 9 is a cross-sectional view showing an example of a cross-section of a display panel corresponding to line I1-I1' of Fig. 5.

[0037] Fig. 10 is a cross-sectional view showing an example of a cross-section of a display panel corresponding to line I1-I1' of Fig. 5.

[0038] Figure 11 is a cross-sectional view showing in detail an example of area B of Figure 8.

[0039] Figure 12 is a cross-sectional view showing in detail an example of area B of Figure 8.

[0040] Figure 13 is a cross-sectional view showing in detail an example of area B of Figure 8.

[0041] Fig. 14 is a layout diagram showing pixels of a display area according to one embodiment.

[0042] Fig. 15 is a cross-sectional view showing an example of a cross-section of a display panel corresponding to line I2-I2' of Fig. 14.

[0043] Fig. 16 is a cross-sectional view showing an example of a cross-section of a display panel corresponding to line I2-I2' of Fig. 14.

[0044] Fig. 17 is a layout diagram showing pixels of a display area according to one embodiment.

[0045] Fig. 18 is a cross-sectional view showing an example of a cross-section of a display panel corresponding to line I3-I3' of Fig. 17.

[0046] FIG. 19 is a layout diagram showing pixels of a display area according to one embodiment.

[0047] Fig. 20 is a cross-sectional view showing an example of a cross-section of a display panel corresponding to line I4-I4' of Fig. 19.

[0048] Fig. 21 is a cross-sectional view showing an example of a cross-section of a display panel corresponding to line I4-I4' of Fig. 19.

[0049] Fig. 22 is a layout diagram showing pixels of a display area according to one embodiment.

[0050] Fig. 23 is a cross-sectional view showing an example of a cross-section of a display panel corresponding to line I5-I5' of Fig. 22.

[0051] Fig. 24 is a cross-sectional view showing an example of a cross-section of a display panel corresponding to line I4-I4' of Fig. 19.

[0052] Fig. 25 is a cross-sectional view showing an example of a cross-section of a display panel corresponding to line I4-I4' of Fig. 19.

[0053] Fig. 26 is a layout diagram showing pixels of a display area according to one embodiment.

[0054] Fig. 27 is a cross-sectional view showing an example of a cross-section of a display panel corresponding to line I6-I6' of Fig. 26.

[0055] FIG. 28 is an exemplary drawing showing a smartwatch including a display device according to one embodiment.

[0056] FIGS. 29 and 30 are exemplary drawings showing a virtual reality device including a display device according to one embodiment.

[0057] FIG. 31 is an exemplary drawing showing a virtual reality device including a display device according to another embodiment.

[0058] FIG. 32 is an exemplary drawing showing an automobile instrument panel and center fascia including display devices according to one embodiment.

[0059] FIG. 33 is an exemplary drawing showing a transparent display device including a display device according to one embodiment.

[0060] The advantages and features of the present invention, and the methods for achieving them, will become clearer with reference to the embodiments described in detail below together with the accompanying drawings. However, the present invention is not limited to the embodiments disclosed below, but may be implemented in various different forms. These embodiments are provided solely to ensure that the disclosure of the present invention is complete and to fully inform those skilled in the art of the scope of the invention, and the present invention is defined solely by the scope of the claims.

[0061] When elements or layers are referred to as being "on" another element or layer, this includes both cases where the other element or layer is directly on top of the other element or layer, or where the other layer or layer is interposed therebetween. Like reference numerals refer to like elements throughout the specification. The shapes, sizes, ratios, angles, numbers, etc. disclosed in the drawings for explaining the embodiments are illustrative and therefore the present invention is not limited to the matters illustrated.

[0062] The individual features of the various embodiments of the present invention can be partially or fully combined or combined with one another, enabling various technically feasible interconnections and operations. Each embodiment may be implemented independently of the others, or may be implemented together in a related manner.

[0063] Specific embodiments are described below with reference to the attached drawings.

[0064] Figure 1 is a perspective view showing a display device according to one embodiment.

[0065] Referring to FIG. 1, the display device (10) is a device that displays a moving image or a still image, and can be used as a display screen for various products such as a mobile phone, a smart phone, a tablet personal computer, a smart watch, a watch phone, a mobile communication terminal, an electronic notebook, an electronic book, a portable multimedia player (PMP), a navigation system, an Ultra Mobile PC (UMPC), etc., as well as a television, a laptop, a monitor, a billboard, an Internet of Things (IOT), etc.

[0066] The display device (10) may be a light-emitting display device such as an organic light-emitting display device using an organic light-emitting diode, a quantum dot light-emitting display device including a quantum dot light-emitting layer, an inorganic light-emitting display device including an inorganic semiconductor, and an ultra-small light-emitting display device using an ultra-small light-emitting diode (micro or nano light emitting diode (micro LED or nano LED)). Hereinafter, the display device (10) is described mainly as an ultra-small light-emitting display device, but the present invention is not limited thereto. Meanwhile, for the convenience of explanation, an ultra-small light-emitting diode is described as a light-emitting element below.

[0067] The display device (10) includes a display panel (100), a display driving circuit (250), a circuit board (300), and a power supply circuit (500). The power supply circuit (500) may also be referred to as a “power supply unit.”

[0068] The display panel (100) may be formed as a rectangular plane having a short side in a first direction (DR1) and a long side in a second direction (DR2) intersecting the first direction (DR1). The corner where the short side in the first direction (DR1) and the long side in the second direction (DR2) meet may be formed to be rounded or formed at a right angle so as to have a curvature (for example, a predetermined curvature). The plane shape of the display panel (100) is not limited to a square, and may be formed in another polygonal, circular, or oval shape. The display panel (100) may be formed flat, but is not limited thereto. For example, the display panel (100) may include a curved portion formed at the left and right ends and having a constant curvature or a varying curvature. In addition, the display panel (100) may be formed flexibly so as to be bent, curved, folded, or rolled.

[0069] The display panel (100) may include a main area (MA) and a sub area (SBA).

[0070] The main area (MA) may include a display area (DA) that displays an image and a non-display area (NDA) that is a surrounding area of ​​the display area (DA). The display area (DA) may include a plurality of pixels that display an image. Each of the pixels may include a plurality of sub-pixels. For example, each of the pixels may include a first sub-pixel that emits a first light, a second sub-pixel that emits a second light, and a third sub-pixel that emits a third light, but the embodiments of the present specification are not limited thereto.

[0071] The sub-area (SBA) may protrude in a second direction (DR2) from one side of the main area (MA). In FIG. 1, the sub-area (SBA) is illustrated as being unfolded, but the sub-area (SBA) may be bent, in which case it may be disposed on the lower surface of the display panel (100). When the sub-area (SBA) is bent, it may overlap with the main area (MA) in the third direction (DR3), which is the thickness direction of the display panel (100). A display driving circuit (250) may be disposed in the sub-area (SBA).

[0072] The display driving circuit (250) can generate signals and voltages for driving the display panel (100). The display driving circuit (250) can be formed as an integrated circuit (IC) and attached to the display panel (100) using a COG (chip on glass) method, a COP (chip on plastic) method, or an ultrasonic bonding method, but is not limited thereto. For example, the display driving circuit (250) can be attached to the circuit board (300) using a COF (chip on film) method.

[0073] The circuit board (300) may be attached to one end of the sub-area (SBA) of the display panel (100). As a result, the circuit board (300) may be electrically connected to the display panel (100) and the display driving circuit (250). The display panel (100) and the display driving circuit (250) may receive digital video data, timing signals, and driving voltages through the circuit board (300). The circuit board (300) may be a flexible printed circuit board, a printed circuit board, or a flexible film such as a chip on film.

[0074] The power supply circuit (500) can generate multiple panel driving voltages according to an external power voltage. The power supply circuit (500) can be formed as an integrated circuit (IC) and attached to a circuit board (300) using a COF method.

[0075] Fig. 2 is a layout diagram showing a display device according to one embodiment. Fig. 2 illustrates that the sub-area (SBA) is unfolded rather than bent.

[0076] Referring to FIG. 2, the display panel (100) may include a main area (MA) and a sub area (SBA).

[0077] The main area (MA) may include a display area (DA) that displays an image and a non-display area (NDA) surrounding the display area (DA). The display area (DA) may occupy most of the area of ​​the main area (MA). The display area (DA) may be positioned at the center of the main area (MA).

[0078] The display area (DA) includes a plurality of pixels (PX) for displaying an image, and each of the plurality of pixels (PX) may include a plurality of sub-pixels (SPX). A pixel (PX) may be defined as a sub-pixel group that is the smallest unit capable of expressing white gradation.

[0079] A non-display area (NDA) may be positioned adjacent to a display area (DA). The non-display area (NDA) may be an area outside the display area (DA). The non-display area (NDA) may be positioned to surround the display area (DA). The non-display area (NDA) may be an edge area of ​​the display panel (100).

[0080] The first scan driver (SDC1) and the second scan driver (SDC2) may be disposed in a non-display area (NDA). The first scan driver (SDC1) may be disposed on one side (for example, the left side) of the display panel (100), and the second scan driver (SDC2) may be disposed on the other side (for example, the right side) of the display panel, but is not limited thereto. Each of the first scan driver (SDC1) and the second scan driver (SDC2) may be electrically connected to the display driver circuit (250) via scan fan out lines. Each of the first scan driver (SDC1) and the second scan driver (SDC2) may receive a scan control signal from the display driver circuit (250), generate scan signals according to the scan control signal, and output the scan signals to the scan lines.

[0081] The sub-area (SBA) may protrude from one side of the main area (MA) in a second direction (DR2). The length of the sub-area (SBA) in the second direction (DR2) may be shorter than the length of the main area (MA) in the second direction (DR2). The length of the sub-area (SBA) in the first direction (DR1) may be shorter than the length of the main area (MA) in the first direction (DR1) or may be substantially the same as the length of the main area (MA) in the first direction (DR1). The sub-area (SBA) may be curved and may be disposed at a lower portion of the display panel (100). In this case, the sub-area (SBA) may overlap the main area (MA) in the third direction (DR3).

[0082] The sub-area (SBA) may include a connection area (CA), a pad area (PA), and a bending area (BA).

[0083] The connection area (CA) is an area that protrudes in the second direction (DR2) from one side of the main area (MA). One side of the connection area (CA) may be in contact with the non-display area (NDA) of the main area (MA), and the other side of the connection area (CA) may be in contact with the bending area (BA).

[0084] The pad area (PA) is an area where pads (PD) and a display driving circuit (250) are arranged. The display driving circuit (250) can be attached to the driving pads of the pad area (PA) using a conductive adhesive such as an anisotropic conductive film. The circuit board (300) can be attached to the pads (PD) of the pad area (PA) using a conductive adhesive such as an anisotropic conductive film. One side of the pad area (PA) can be in contact with the bending area (BA).

[0085] The bending area (BA) is a bending area. When the bending area (BA) is bent, the pad area (PA) can be positioned below the connection area (CA) and below the main area (MA). The bending area (BA) can be positioned between the connection area (CA) and the pad area (PA). One side of the bending area (BA) can be in contact with the connection area (CA), and the other side of the bending area (BA) can be in contact with the pad area (PA).

[0086] FIG. 3 is a block diagram showing a display device according to one embodiment.

[0087] Referring to FIG. 3, the display area (DA) includes a plurality of pixels (PX), a plurality of scan lines (SL), a plurality of emission control lines (EL), and a plurality of data lines (DL).

[0088] A plurality of pixels (PX) can be arranged in a matrix form in a first direction (DR1) and a second direction (DR2). A plurality of scan lines (SL) and a plurality of emission control lines (EL) can extend in the first direction (DR1) and be arranged in the second direction (DR2). A plurality of data lines (DL) can extend in the second direction (DR2) and be arranged in the first direction (DR1). The plurality of scan lines (SL) include a plurality of write scan lines (GWL), a plurality of initialization scan lines (GIL), and a plurality of bias scan lines (GBL).

[0089] Each of the plurality of sub-pixels (SPX) may be connected to one of the plurality of write scan lines (GWL), one of the plurality of initialization scan lines (GIL), one of the plurality of bias scan lines (GBL), one of the plurality of emission control lines (EL), and one of the plurality of data lines (DL). Each of the plurality of sub-pixels (SPX) may be supplied with a data voltage of the data line (DL) according to a write scan signal of the write scan line (GWL), and may emit light through a light-emitting element according to the data voltage.

[0090] The non-display area (NDA) includes a first scan driver (SDC1), a second scan driver (SDC2), and a display driver circuit (250).

[0091] Each of the first scan driving unit (SDC1) and the second scan driving unit (SDC2) may include a write scan signal output unit (611), an initialization scan signal output unit (612), a bias scan signal output unit (613), and an emission control signal output unit (614). Each of the write scan signal output unit (611), the initialization scan signal output unit (612), the bias scan signal output unit (613), and the emission control signal output unit (614) may receive a scan timing control signal (SCS) from a timing control circuit (251).

[0092] The write scan signal output unit (611) can generate write scan signals according to the scan timing control signal (SCS) of the timing control circuit (251) and sequentially output them to write scan lines (GWL).

[0093] The initialization scan signal output unit (612) can generate initialization scan signals according to a scan timing control signal (SCS) and sequentially output them to initialization scan lines (GIL).

[0094] The bias scan signal output unit (613) can generate bias scan signals according to a scan timing control signal (SCS) and sequentially output them to bias scan lines (GBL). The light emission control signal output unit (614) can generate light emission control signals according to a scan timing control signal (SCS) and sequentially output them to light emission control lines (EL).

[0095] The display driving circuit (250) includes a timing control circuit (251) and a data driving circuit (252). The timing control circuit (251) and the data driving circuit (252) may also be referred to as a “timing control unit” and a “data driving unit,” respectively.

[0096] The data driving circuit (252) can receive digital video data (DATA) and a data timing control signal (DCS) from the timing control circuit (251). The data driving circuit (252) converts the digital video data (DATA) into analog data voltages according to the data timing control signal (DCS) and outputs the converted data voltages to the data lines (DL). In this case, the sub-pixels (SPX) are selected by the write scan signals of the first scan driving unit (SDC1) and the second scan driving unit (SDC2), and the data voltages can be supplied to the selected sub-pixels (SPX).

[0097] The timing control circuit (251) can receive digital video data (DATA) and timing signals from the outside. The timing control circuit (251) can generate a scan timing control signal (SCS) and a data timing control signal (DCS) for controlling the display panel (100) according to the timing signals. The timing control circuit (400) can output the scan timing control signal (SCS) to the first scan driving unit (SDC1) and the second scan driving unit (SDC2). The timing control circuit (251) can output digital video data (DATA) and a data timing control signal (DCS) to the data driving circuit (252).

[0098] The power supply circuit (500) can generate a plurality of panel driving voltages according to a power voltage supplied from an external source. For example, the power supply circuit (500) can generate a first power voltage (VDD), a second power voltage (VSS), a third power voltage (VINT), and a fourth power voltage (VAINT) and supply them to the display panel (100).

[0099] Fig. 4 is an equivalent circuit diagram showing a sub-pixel according to one embodiment.

[0100] Referring to FIG. 4, a sub-pixel (SPX) according to one embodiment may be connected to scan lines (GWL, GIL, GBL), an emission control line (EL), and a data line (DL). For example, the sub-pixel (SPX) may be connected to a write scan line (GWL), an initialization scan line (GIL), a bias scan line (GBL), an emission control line (EL), and a data line (DL).

[0101] A sub-pixel (SPX) according to one embodiment includes a driving transistor (DT), switch elements, a capacitor (C1), and a light-emitting element (LE). The switch elements include first to sixth transistors (ST1, ST2, ST3, ST4, ST5, ST6).

[0102] A driving transistor (DT) includes a gate electrode, a first electrode, and a second electrode. The driving transistor (DT) controls a drain-source current (Ids, hereinafter referred to as “driving current”) flowing between the first electrode and the second electrode according to a data voltage applied to the gate electrode.

[0103] The light emitting element (LE) may be a micro light emitting diode.

[0104] The light emitting element (LE) emits light according to the driving current (Ids). The amount of light emitted by the light emitting element (LE) may be proportional to the driving current (Ids). The anode electrode of the light emitting element (LE) may be connected to the first electrode of the fourth transistor (ST4) and the second electrode of the sixth transistor (ST6), and the cathode electrode may be connected to the second power line (VSL) to which the second power voltage is applied.

[0105] A capacitor (C1) is formed between the gate electrode of the driving transistor (DT) and a first power line (VDL) to which a first power voltage is applied. The first power voltage may be a voltage of a higher level than the second power voltage. One electrode of the capacitor (C1) may be connected to the gate electrode of the driving transistor (DT), and the other electrode may be connected to the first power line (VDL).

[0106] As shown in Fig. 4, the first to sixth transistors (ST1, ST2, ST3, ST4, ST5, ST6) and the driving transistor (DT) can all be formed as p-type MOSFETs. In this case, the active layers of each of the first to sixth transistors (ST1, ST2, ST3, ST4, ST5, ST6) and the driving transistor (DT) can be formed of polysilicon.

[0107] The gate electrode of the first transistor (ST1) and the gate electrode of the second transistor (ST2) may be connected to a write scan line (GWL), the gate electrode of the third transistor (ST3) may be connected to an initialization scan line (GIL), and the gate electrode of the fourth transistor (ST4) may be connected to a bias scan line (GBL). Since the first to sixth transistors (ST1, ST2, ST3, ST4, ST5, and ST6) are formed of p-type MOSFETs, they may be turned on when a scan signal of a gate low voltage and an emission control signal are applied to the initialization scan line (GIL), the write scan line (GWL), the bias scan line (GBL), and the emission line (EL), respectively. One electrode of the third transistor (ST3) may be connected to a first initialization voltage line (VIL) to which a third power supply voltage (VINT of FIG. 3) is applied, and one electrode of the fourth transistor (ST4) may be connected to a second initialization voltage line (VAIL) to which a fourth power supply voltage (VAINT of FIG. 3) is applied. The third power supply voltage (VINT of FIG. 3) and the fourth power supply voltage (VAINT of FIG. 3) may be different voltages. In addition, the third power supply voltage (VINT of FIG. 3) and the fourth power supply voltage (VAINT of FIG. 3) may be a voltage at a lower level than the first power supply voltage (VDD) and a voltage at a higher level than the second power supply voltage (VSS).

[0108] Alternatively, the driving transistor (DT), the second transistor (ST2), the fourth transistor (ST4), the fifth transistor (ST5), and the sixth transistor (ST6) may be formed as p-type MOSFETs, and the first transistor (ST1) and the third transistor (ST3) may be formed as n-type MOSFETs. In this case, the active layers of each of the driving transistor (DT), the second transistor (ST2), the fourth transistor (ST4), the fifth transistor (ST5), and the sixth transistor (ST6) formed as p-type MOSFETs may be formed of polysilicon, and the active layers of each of the first transistor (ST1) and the third transistor (ST3) formed as n-type MOSFETs may be formed of oxide semiconductors. In addition, since the first transistor (ST1) and the third transistor (ST3) are formed as n-type MOSFETs, the first transistor (ST1) may be turned on when a scan signal of a gate high voltage is applied, and the third transistor (ST3) may be turned on when an initialization scan signal of a gate high voltage is applied. In comparison, the second transistor (ST2), the fourth transistor (ST4), the fifth transistor (ST5), and the sixth transistor (ST6) are formed as p-type MOSFETs, and thus can be turned on when a scan signal of gate low voltage and a light emission control signal of gate low voltage are applied.

[0109] Alternatively, when the fourth transistor (ST4) is formed as an n-type MOSFET and the remaining transistors (DT, ST1, ST2, ST3, ST5, ST6) are formed as p-type MOSFETs, the active layer of the fourth transistor (ST4) may be formed of an oxide semiconductor, and the active layers of each of the remaining transistors (DT, ST1, ST2, ST3, ST5, ST6) may be formed of polysilicon. In addition, the fourth transistor (ST4) may be turned on when a scan signal of a gate high voltage is applied, whereas the remaining transistors (DT, ST1, ST2, ST3, ST5, ST6) may be turned on when a scan signal of a gate low voltage and a light emission control signal of a gate low voltage are applied.

[0110] Alternatively, the first to sixth transistors (ST1, ST2, ST3, ST4, ST5, ST6) and the driving transistor (DT) may all be formed as n-type MOSFETs. In this case, the active layers of each of the first to sixth transistors (ST1, ST2, ST3, ST4, ST5, ST6) and the driving transistor (DT) are formed of an oxide semiconductor and can be turned on when a scan signal of a gate high voltage and a light emission control signal are applied.

[0111] FIG. 5 is a layout diagram showing pixels of a display area according to one embodiment.

[0112] Referring to FIG. 5, each of the plurality of pixels (PX) of the display area (DA) may include three sub-pixels (SPX1, SPX2, SPX3), but the embodiment of the present specification is not limited thereto and may include four sub-pixels. When each of the plurality of pixels (PX) includes three sub-pixels (SPX1, SPX2, SPX3), it may include a first sub-pixel (SPX1), a second sub-pixel (SPX2), and a third sub-pixel (SPX3).

[0113] A plurality of pixels (PX) can be arranged in a matrix form. In each of the plurality of pixels (PX), a first sub-pixel (SPX1), a second sub-pixel (SPX2), and a third sub-pixel (SPX3) can be arranged in a first direction (DR1).

[0114] When each of the plurality of pixels (PX) includes three sub-pixels (SPX1, SPX2, SPX3), the first sub-pixel (SPX1) can emit first light, the second sub-pixel (SPX2) can emit second light, and the third sub-pixel (SPX3) can emit third light. Here, the first light may be light in a blue wavelength band, the second light may be light in a green wavelength band, and the third light may be light in a red wavelength band. For example, the blue wavelength band may refer to a light whose main peak wavelength is included in a wavelength band of approximately 370 nm to 460 nm, the green wavelength band may refer to a light whose main peak wavelength is included in a wavelength band of approximately 480 nm to 560 nm, and the red wavelength band may refer to a light whose main peak wavelength is included in a wavelength band of approximately 600 nm to 750 nm.

[0115] Alternatively, when each of the plurality of pixels (PX) includes four sub-pixels, the first sub-pixel may emit a first light, the second and fourth sub-pixels may emit a second light, and the third sub-pixel may emit a third light. Alternatively, the first sub-pixel may emit a first light, the second sub-pixel may emit a second light, the third sub-pixel may emit a third light, and the fourth sub-pixel may emit a fourth light. In this case, the fourth light may be white light.

[0116] The first sub-pixel (SPX1) includes a first pixel electrode (PXE1), a plurality of light-emitting elements (LEs), and a first light conversion layer (QDL1). The second sub-pixel (SPX2) includes a second pixel electrode (PXE2), a plurality of light-emitting elements (LEs), and a second light conversion layer (QDL2). The third sub-pixel (SPX3) includes a third pixel electrode (PXE3), a plurality of light-emitting elements (LEs), and a light-transmitting layer (or third light conversion layer) (TPL).

[0117] Each of the first pixel electrode (PXE1), the second pixel electrode (PXE2), and the third pixel electrode (PXE3) may have a rectangular planar shape having a short side in the first direction (DR1) and a long side in the second direction (DR2). The area of ​​the first sub-pixel (SPX1), the area of ​​the second sub-pixel (SPX2), and the area of ​​the third sub-pixel (SPX3) may be set according to the light conversion efficiency of the first light conversion layer (QDL1) and the light conversion efficiency of the second light conversion layer (QDL2). For example, the lower the light conversion efficiency, the larger the area of ​​the sub-pixel.

[0118] For example, as shown in FIG. 5, when the light conversion efficiency of the second light conversion layer (QDL2) is lower than the light conversion efficiency of the first light conversion layer (QDL1), the area of ​​the second pixel electrode (PXE2) may be larger than the area of ​​the first pixel electrode (PXE1). In addition, since the light transmitting layer (TPL) directly transmits the light of the light emitting element (LE), whereas the first light conversion layer (QDL1) must convert the light, the area of ​​the first pixel electrode (PXE1) may be larger than the area of ​​the third pixel electrode (PXE3).

[0119] Each of the pixel electrodes (PXE1, PXE2, PXE3) can be electrically connected to at least one transistor through a pixel connection hole (CT1 / CT2 / CT3). For example, each of the pixel electrodes (PXE1, PXE2, PXE3) can be electrically connected to a first electrode of a fourth transistor (ST4 of FIG. 4) and a second electrode of a sixth transistor (ST6 of FIG. 4) of the corresponding sub-pixel.

[0120] A plurality of light emitting elements (LE) may be disposed on each of the pixel electrodes (PXE1, PXE2, PXE3). The same number of light emitting elements (LE) may be disposed on each of the pixel electrodes (PXE1, PXE2, PXE3). For example, two light emitting elements (LE) may be disposed on each of the pixel electrodes (PXE1, PXE2, PXE3). The plurality of light emitting elements (LE) may emit a third light, for example, light in a blue wavelength band, but the embodiment of the present specification is not limited thereto. When the light emitting element (LE) of the first sub-pixel (SPX1) emits a first light, the light emitting element (LE) of the second sub-pixel (SPX2) emits a second light, and the light emitting element (LE) of the third sub-pixel (SPX3) emits a third light, the light conversion layers (QDL1, QDL2) and the light transmitting layer (TPL) may be omitted.

[0121] The first light conversion layer (QDL1) can completely overlap the first pixel electrode (PXE1) and the plurality of light emitting elements (LEs) of the first sub-pixel (SPX1). The area of ​​the first light conversion layer (QDL1) can be larger than the area of ​​the first pixel electrode (PXE1). The first light conversion layer (QDL1) can convert or shift the peak wavelength of incident light into light of another specific peak wavelength and emit the light. For example, the first light conversion layer (QDL1) can convert or shift third light emitted from the plurality of light emitting elements (LEs) of the first sub-pixel (SPX1) into first light.

[0122] The second light conversion layer (QDL2) can completely overlap the second pixel electrode (PXE2) and the plurality of light emitting elements (LEs) of the second sub-pixel (SPX2). The area of ​​the second light conversion layer (QDL2) can be larger than the area of ​​the second pixel electrode (PXE2). The second light conversion layer (QDL2) can convert or shift the peak wavelength of incident light into light of another specific peak wavelength and emit the light. For example, the second light conversion layer (QDL2) can convert or shift third light emitted from the plurality of light emitting elements (LEs) of the second sub-pixel (SPX2) into second light.

[0123] The light transmitting layer (TPL) can completely overlap the third pixel electrode (PXE3) and the plurality of light emitting elements (LEs) of the third sub-pixel (SPX3). The light transmitting layer (TPL) can directly transmit incident light. For example, the light transmitting layer (TPL) can directly transmit third light emitted from the plurality of light emitting elements (LEs) of the third sub-pixel (SPX3).

[0124] Fig. 6 is a cross-sectional view showing an example of a cross-section of a display panel corresponding to line I1-I1' of Fig. 5. Fig. 7 is a cross-sectional view showing in detail an example of area A of Fig. 6.

[0125] Referring to FIGS. 6 and 7, the substrate (SUB) may be made of an insulating material such as glass or a polymer resin. If the substrate (SUB) is made of a polymer resin, it may be a flexible substrate that can be stretched. The polymer resin may be an acrylic resin, an epoxy resin, a phenolic resin, a polyamide resin, or a polyimide resin.

[0126] A barrier film (BR) may be disposed on the substrate (SUB). The barrier film (BR) is a film for protecting the transistors of the thin film transistor layer (TFTL) and the light emitting elements (LE) disposed on the thin film transistor layer (TFTL) from moisture penetrating through the substrate (SUB) which is vulnerable to moisture permeation. The barrier film (BR) may be formed of a plurality of inorganic films that are alternately laminated.

[0127] A thin film transistor (TFT1) may be arranged on the barrier film (BR). The thin film transistor (TFT1) may be either the fourth transistor (ST4) or the sixth transistor (ST6) illustrated in FIG. 4. The thin film transistor (TFT1) may include a first active layer (ACT1) and a first gate electrode (G1).

[0128] A first active layer (ACT1) of a thin film transistor (TFT1) may be disposed on the barrier film (BR). The first active layer (ACT1) of the thin film transistor (TFT1) may include polycrystalline silicon, single-crystalline silicon, low-temperature polycrystalline silicon, or amorphous silicon. Alternatively, the first active layer (ACT1) of the thin film transistor (TFT1) may be formed of an oxide semiconductor including IGZO (indium (In), gallium (Ga), zinc (Zn), and oxygen (O)), IGZTO (indium (In), gallium (Ga), zinc (Zn), tin (Sn), and oxygen (O)), or IGTO (indium (In), gallium (Ga), tin (Sn), and oxygen (O)).

[0129] The first active layer (ACT1) may include a first channel region (CHA1), a first source region (S1), and a first drain region (D1). The first channel region (CHA1) may be a region overlapping the first gate electrode (G1) in a third direction (DR3) that is a thickness direction of the substrate (SUB). The first source region (S1) may be disposed on one side of the first channel region (CHA1), and the first drain region (D1) may be disposed on the other side of the first channel region (CHA1). The first source region (S1) and the first drain region (D1) may be regions that do not overlap the first gate electrode (G1) in the third direction (DR3). The first source region (S1) and the first drain region (D1) may be regions in which ions are doped into a semiconductor material to have conductivity.

[0130] A first gate insulating film (131) may be disposed on the first channel region (CHA1), the first source region (S1), the first drain region (D1), and the barrier film (BR) of the thin film transistor (TFT1).

[0131] A first gate metal layer may be disposed on the first gate insulating film (131). The first gate metal layer may include a first gate electrode (G1) of a thin film transistor (TFT1) and a first capacitor electrode (CAE1). The first gate electrode (G1) may overlap the first active layer (ACT1) in the third direction (DR3). Although FIG. 6 illustrates that the first gate electrode (G1) and the first capacitor electrode (CAE1) are disposed apart from each other, when the thin film transistor (TFT1) is the driving transistor (DT) of FIG. 4, the first gate electrode (G1) and the first capacitor electrode (CAE1) may be electrically or physically connected to each other. Alternatively, when the thin film transistor (TFT1) is any one of the first to sixth transistors (ST1 to ST6) of FIG. 4, the first gate electrode (G1) and the first capacitor electrode (CAE1) may not be electrically or physically connected to each other.

[0132] A second gate insulating film (132) may be disposed on the first gate electrode (G1), the first capacitor electrode (CAE1), and the first gate insulating film (131) of the thin film transistor (TFT1).

[0133] A second gate metal layer may be disposed on the second gate insulating film (132). The second gate metal layer may include a second capacitor electrode (CAE2). The second capacitor electrode (CAE2) may overlap the first capacitor electrode (CAE1) in the third direction (DR3). Since the second gate insulating film (132) has a permittivity (for example, a predetermined permittivity), a capacitor (C1 in FIG. 4) may be formed by the first capacitor electrode (CAE1), the second capacitor electrode (CAE2), and the second gate insulating film (132) disposed therebetween.

[0134] A first interlayer insulating film (141) may be placed on the second capacitor electrode (CAE2) and the second gate insulating film (132).

[0135] A first data metal layer may be disposed on an interlayer insulating film (141). The first data metal layer may include a first source connection electrode (PCE1). The first source connection electrode (PCE1) may be connected to a first drain region (D1) of a first active layer (ACT1) through a first source contact hole (PCT1) penetrating the first gate insulating film (131), the second gate insulating film (132), and the interlayer insulating film (141).

[0136] A first planarization film (160) may be placed on the first source connection electrode (PCE1) and the interlayer insulating film (141) to planarize the step caused by the thin film transistor (TFT1).

[0137] A second data metal layer may be disposed on the first planarization film (160). The second data metal layer may include a second source connection electrode (PCE2). The second source connection electrode (PCE2) may be connected to the first source connection electrode (PCE1) through a second source contact hole (PCT2) penetrating the first planarization film (160).

[0138] A second planarization film (180) may be placed on the second source connection electrode (PCE2) and the first planarization film (160).

[0139] The barrier film (BR), the first gate insulating film (131), the second gate insulating film (132), and the interlayer insulating film (141) may be formed of an inorganic film, for example, silicon nitride (SiNx), silicon nitride oxide (SiON), silicon oxide (SiOx), titanium oxide (TiOx), or aluminum oxide (AlOx).

[0140] The first gate metal layer, the second gate metal layer, the first data metal layer, and the second data metal layer may be formed as a single layer or multiple layers made of one or an alloy of molybdenum (Mo), aluminum (Al), chromium (Cr), gold (Au), titanium (Ti), nickel (Ni), neodymium (Nd), and copper (Cu).

[0141] The first flattening film (160) and the second flattening film (180) can be formed of an organic film such as an acrylic resin, an epoxy resin, a phenolic resin, a polyamide resin, or a polyimide resin.

[0142] A light-emitting element layer may be arranged on the second planarization film (180). The light-emitting element layer may include pixel electrodes (PXE1, PXE2, PXE3), light-emitting elements (LE), a common electrode (CE), and an organic film (210, 211, 212).

[0143] A pixel electrode layer may be disposed on the second planarization film (180). The pixel electrode layer may include a first pixel electrode (PXE1), a second pixel electrode (PXE2), and a third pixel electrode (PXE3). Each of the pixel electrodes (PXE1, PXE2, PXE3) may be connected to a second source connection electrode (PCE2) through a pixel connection hole (CT1 / CT2 / CT3 of FIG. 5) penetrating the second planarization film (180). Each of the pixel electrodes (PXE1, PXE2, PXE3) may be connected to a first source region (S1) or a first drain region (D1) of a thin film transistor (TFT1) through the first source connection electrode (PCE1) and the second source connection electrode (PCE2). Therefore, a voltage controlled by the thin film transistor (TFT1) may be applied to each of the pixel electrodes (PXE1, PXE2, PXE3).

[0144] The pixel electrode layer may be formed as a single layer or multiple layers made of one or an alloy of molybdenum (Mo), aluminum (Al), chromium (Cr), gold (Au), titanium (Ti), nickel (Ni), neodymium (Nd), and copper (Cu). For example, in order to lower the resistance of each of the pixel electrodes (PXE1, PXE2, PXE3), the pixel electrode layer may be made of copper (Cu) having a low surface resistance.

[0145] A first organic film (210) may be disposed on each of the pixel electrodes (PXE1, PXE2, PXE3). The first organic film (210) serves to temporarily fix or adhere the plurality of light emitting elements (LEs) to prevent the plurality of light emitting elements (LEs) from tilting and falling over or falling over during the process of transferring the plurality of light emitting elements (LEs) to the display panel (100). That is, the first organic film (210) may be a film for temporarily adhering the plurality of light emitting elements (LEs) to each of the pixel electrodes (PXE1, PXE2, PXE3). To facilitate the temporary adhering, the thickness of the first organic film (210) may be greater than the thickness of each of the pixel electrodes (PXE1, PXE2, PXE3) and may be greater than the thickness of the contact electrode (CTE).

[0146] The first organic film (210) may be a photosensitive organic film such as a photoresist. Alternatively, the first organic film (210) may be formed of an acrylic resin, an epoxy resin, a phenolic resin, a polyamide resin, a polyimide resin, or the like.

[0147] A plurality of light emitting elements (LE) may be arranged on the first organic film (210). In Fig. 6, it is exemplified that each of the plurality of light emitting elements (LE) is a vertical type micro LED extending in a third direction (DR3). The vertical type micro LED refers to an LED having a structure in which a first semiconductor layer (SEM1), an active layer (MQW), and a second semiconductor layer (SEM2) are sequentially arranged in the third direction (DR3), which is a vertical direction.

[0148] Each of the plurality of light emitting elements (LEs) may have a cross-sectional shape of a reverse taper. For example, each of the plurality of light emitting elements (LEs) may have a cross-sectional shape of a trapezoid in which the width of the upper surface is wider than the width of the lower surface.

[0149] Each of the plurality of light emitting elements (LE) may be formed of an inorganic material such as gallium nitride (GaN). Each of the plurality of light emitting elements (LE) may have a length in a first direction (DR1), a length in a second direction (DR2), and a length in a third direction (DR3) of several to several hundred μm, respectively. For example, each of the plurality of light emitting elements (LE) may have a length in the first direction (DR1), a length in the second direction (DR2), and a length in the third direction (DR3) of approximately 100 μm or less, respectively.

[0150] Each of the plurality of light emitting elements (LEs) can be grown and formed on a semiconductor substrate such as a silicon substrate or a sapphire substrate. The plurality of light emitting elements (LEs) can be transferred directly from the semiconductor substrate onto the pixel electrodes (PXE1, PXE2, PXE3) of the display panel (100). Alternatively, the plurality of light emitting elements (LEs) can be transferred onto the pixel electrodes (PXE1, PXE2, PXE3) of the display panel (100) through an electrostatic method using an electrostatic head or a stamp method using an elastic polymer material such as PDMS or silicon as a transfer substrate.

[0151] A light emitting element (LE) may include a conductive layer (E1), a semiconductor stack (STC), a contact electrode (CTE), and a passivation layer (INS). The semiconductor stack (STC) may include a first semiconductor layer (SEM1), an active layer (MQW), and a second semiconductor layer (SEM2) sequentially arranged in a third direction (DR3).

[0152] The conductive layer (E1) may be disposed on the lower surface of the first semiconductor layer (SEM1). In Fig. 7, the conductive layer (E1) covers the entire lower surface of the first semiconductor layer (SEM1), but the embodiment of the present specification is not limited thereto. For example, the conductive layer (E1) may be disposed on a portion of the lower surface of the first semiconductor layer (SEM1). The conductive layer (E1) may include any one of molybdenum (Mo), aluminum (Al), chromium (Cr), gold (Au), titanium (Ti), nickel (Ni), neodymium (Nd), and copper (Cu).

[0153] The first semiconductor layer (SEM1) may be disposed on the contact electrode (CTE). The length of the lower surface of the first semiconductor layer (SEM1) in the first direction (DR1) or the length of the lower surface of the first semiconductor layer (SEM1) in the second direction (DR2) may be smaller than the length of the contact electrode (CTE) in the first direction (DR1) or the length of the contact electrode (CTE) in the second direction (DR2). The first semiconductor layer (SEM1) may be formed of a semiconductor material layer doped with a first conductive dopant such as magnesium (Mg), zinc (Zn), calcium (Ca), strontium (Sr), barium (Ba), or the like, for example, gallium nitride (GaN).

[0154] The active layer (MQW) may be disposed on the first semiconductor layer (SEM1). The active layer (MQW) may include the same semiconductor material as the first semiconductor layer (SEM1) and the second semiconductor layer (SEM2). For example, when the first semiconductor layer (SEM1) and the second semiconductor layer (SEM2) include gallium nitride (GaN), the active layer (MQW) may also include gallium nitride (GaN). For example, the active layer (MQW) may include at least one of gallium nitride (GaN), indium gallium nitride (InGaN), and aluminum gallium nitride (AlGaN). The active layer (MQW) may emit light by the combination of electron-hole pairs in response to an electric signal applied through the first semiconductor layer (SEM1) and the second semiconductor layer (SEM2).

[0155] The active layer (MQW) may include a material having a single or multiple quantum well structure. When the active layer (MQW) includes a material having a multiple quantum well structure, it may have a structure in which a plurality of well layers and barrier layers are alternately stacked. In this case, the well layers may be formed of InGaN, and the barrier layer may be formed of GaN or AlGaN, but is not limited thereto. Alternatively, the active layer (MQW) may have a structure in which a semiconductor material having a large band gap energy and a semiconductor material having a small band gap energy are alternately stacked, or may include different group III to group V semiconductor materials depending on the wavelength of the emitted light.

[0156] When the active layer (MQW) includes indium gallium nitride (InGaN), the color of the emitted light may vary depending on the content of indium (In). For example, as the content of indium (In) increases, the wavelength band of the light emitted by the active layer may shift toward a red wavelength band, and as the content of indium (In) decreases, the wavelength band of the light emitted by the active layer may shift toward a blue wavelength band. For example, the content of indium (In) in the active layer (MQW) of the light-emitting element (LE) that emits the third light (light in the blue wavelength band) may be approximately 10 wt% to 20 wt%.

[0157] A second semiconductor layer (SEM2) may be disposed on the active layer (MQW). The second semiconductor layer (SEM2) may be a semiconductor material layer doped with a second conductive dopant, such as silicon (Si), germanium (Ge), or tin (Sn), for example, gallium nitride (GaN).

[0158] An electron blocking layer may be positioned between the first semiconductor layer (SEM1) and the active layer (MQW). The electron blocking layer may be a layer that suppresses or prevents excessive electrons from flowing into the active layer (MQW). For example, the electron blocking layer may be AlGaN or p-AlGaN doped with p-type Mg. The electron blocking layer may be omitted.

[0159] The superlattice layer may be positioned between the active layer (MQW) and the second semiconductor layer (SEM2). The superlattice layer may be a layer for relieving stress between the second semiconductor layer (SEM2) and the active layer (MQW). For example, the superlattice layer may be formed of InGaN or GaN. The superlattice layer may be omitted.

[0160] The protective film (INS) may be disposed on the side of the first semiconductor layer (SEM1), the side of the active layer (MQW), and the side of the second semiconductor layer (SEM2). The protective film (INS) may be a film for protecting the side of the light emitting element (LE). The protective film (INS) may be formed of an inorganic film, for example, silicon nitride (SiNx), silicon nitride oxide (SiON), silicon oxide (SiOx), titanium oxide (TiOx), or aluminum oxide (AlOx).

[0161] The contact electrode (CTE) may be disposed on the protective film (INS). The contact electrode (CTE) may be disposed between the first organic film (210) and the protective film (INS). The contact electrode (CTE) may be in contact with the first organic film (210).

[0162] Although FIGS. 6 and 7 illustrate that the contact electrode (CTE) of each of the light-emitting elements (LE) is disposed on the first organic film (210), the embodiment of the present specification is not limited thereto. For example, the first organic film (210) may be disposed on the lower surface and a portion of the side surface of the contact electrode (CTE) of each of the light-emitting elements (LE). Alternatively, the first organic film (210) may be disposed on the side surface of the conductive layer (E1) of each of the light-emitting elements (LE). Alternatively, the first organic film (210) may be disposed on the side surface of the first semiconductor layer (SEM1), the side surface of the active layer (MQW), and the side surface of the second semiconductor layer (SEM2) of each of the light-emitting elements (LE). In this case, the first organic film (210) may be disposed on a portion of the side surface of the second semiconductor layer (SEM2).

[0163] The contact electrode (CTE) can be connected to the exposed conductive layer (E1) without being covered by the protective film (INS). As a result, even if one of the contact electrodes (CTE) is not connected to the conductive layer (E1) due to a process error, the other contact electrode (CTE) is connected to the conductive layer (E1), thereby preventing a defect in which the light emitting element (LE) does not light up.

[0164] When the contact electrode (CTE) is formed of a metal with high reflectivity, light emitted from the active layer (MQW) of the light emitting element (LE) and traveling in the lateral direction of the light emitting element (LE) can be reflected by the contact electrode (CTE) and emitted to the upper surface of the light emitting element (LE). Therefore, since light loss of the light emitting element (LE) can be reduced, the light efficiency of the light emitting element (LE) can be increased. Therefore, in order to increase the light efficiency of the light emitting element (LE), it is preferable that the contact electrode (CTE) be arranged to cover most of the lateral surface of the semiconductor stack (STC).

[0165] The contact electrode (CTE) may include any one of molybdenum (Mo), aluminum (Al), chromium (Cr), gold (Au), titanium (Ti), nickel (Ni), neodymium (Nd), and copper (Cu). Specifically, the contact electrode (CTE) may be formed as a two-layer structure of chromium (Cr) and gold (Au), a three-layer structure of titanium (Ti), aluminum (Al), and titanium (Ti), or a three-layer structure of indium tin oxide (ITO), silver (Ag), and indium tin oxide (ITO) to increase reflectivity.

[0166] The connection electrode (BE) connects the contact electrode (CTE) of the light-emitting element (LE) and one of the pixel electrodes (PXE1, PXE2, PXE3). The connection electrode (BE) can be connected to one of the pixel electrodes (PXE1, PXE2, PXE3) exposed through a connection hole (BH) penetrating the first organic film (210). In addition, the connection electrode (BE) can be disposed on the upper surface of the first organic film (210) and the side surface of the contact electrode (CTE). In addition, the connection electrode (BE) can be disposed on a part of the side surface of the light-emitting element (LE). For example, the connection electrode (BE) can be disposed on a part of the passivation layer (INS) of the light-emitting element (LE).

[0167] The connecting electrode (BE) may include any one of molybdenum (Mo), aluminum (Al), chromium (Cr), gold (Au), titanium (Ti), nickel (Ni), neodymium (Nd), and copper (Cu). Alternatively, the connecting electrode (BE) may be made of a transparent conductive material (TCO), such as indium tin oxide (ITO) and indium zinc oxide (IZO), which can transmit light.

[0168] When the connecting electrode (BE) is made of a highly reflective metal material such as aluminum (Al), light emitted from the active layer (MQW) of the light emitting element (LE) that propagates in the lateral direction of the light emitting element (LE) can be reflected by the connecting electrode (BE) and propagate upwardly toward the light emitting element (LE). Accordingly, light loss from the light emitting element (LE) can be reduced, and thus the light efficiency of the light emitting element (LE) can be increased.

[0169] The third organic film (211) may be arranged to cover a portion of the side surface of the plurality of light emitting elements (LE). In addition, the third organic film (211) may be arranged to cover the connection electrode (BE), but at least a portion of the connection electrode (BE) may be exposed without being covered by the third organic film (211).

[0170] The fourth organic film (212) may be disposed on the third organic film (211). The fourth organic film (212) may be disposed to cover a portion of a side surface of each of the plurality of light-emitting elements (LE). The fourth organic film (212) may be disposed on at least a portion of the connection electrode (BE) that is exposed and not covered by the third organic film (211). The upper surface of each of the plurality of light-emitting elements (LE) may be exposed and not covered by the fourth organic film (212).

[0171] The third organic film (211) and the fourth organic film (212) can be formed of an organic film such as an acrylic resin, an epoxy resin, a phenolic resin, a polyamide resin, or a polyimide resin.

[0172] The third organic film (211) and the fourth organic film (212) are layers for leveling the steps caused by the plurality of light-emitting elements (LE). If the height of the third organic film (211) is arranged to cover most of the side surfaces of each of the plurality of light-emitting elements (LE), the fourth organic film (212) may be omitted.

[0173] A common electrode (CE) may be disposed on the upper surface of each of the plurality of light emitting elements (LE) and the upper surface of the fourth organic film (212). The common electrode (CE) may be a common layer formed in common on the first sub-pixel (SPX1), the second sub-pixel (SPX2), and the third sub-pixel (SPX3). The common electrode (CE) may be made of a transparent metal material (TCO, Transparent Conductive Material), such as ITO (Indium Tin Oxide) and IZO (Indium Zinc Oxide), which can transmit light.

[0174] Meanwhile, the pixel electrodes (PXE1, PXE2, PXE3) may be referred to as anode electrodes or first electrodes, and the common electrode (CE) may be referred to as cathode electrodes or second electrodes.

[0175] The first capping layer (CAP1) can be disposed on the common electrode (CE).

[0176] A light-shielding layer (BM), a first light conversion layer (QDL1), a second light conversion layer (QDL2), and a light-transmitting layer (TPL) may be disposed on the first capping layer (CAP1). The first light conversion layer (QDL1), the second light conversion layer (QDL2), and the light-transmitting layer (TPL) may be formed by the partitioning of the light-shielding layer (BM). Therefore, in the first sub-pixel (SPX1), the first light conversion layer (QDL1) may be disposed on the first capping layer (CAP1), in the second sub-pixel (SPX2), the second light conversion layer (QDL2) may be disposed on the first capping layer (CAP1), and in the third sub-pixel (SPX3), the light-transmitting layer (TPL) may be disposed on the first capping layer (CAP1). The light-shielding layer (BM) may overlap with the third organic film (211) and the fourth organic film (212) in the third direction (DR3), and may not overlap with the plurality of light-emitting elements (LE).

[0177] The first light conversion layer (QDL1) can convert a portion of the third light (light in the blue wavelength band) incident from the light emitting element (LE) into first light (light in the red wavelength band). The first light conversion layer (QDL1) can include a first base resin (BRS1) and a first wavelength conversion particle (WCP1). The first base resin (BRS1) can include a light-transmitting organic material. The first wavelength conversion particle (WCP1) can convert a portion of the third light (light in the blue wavelength band) incident from the light emitting element (LE) into first light (light in the red wavelength band).

[0178] The second light conversion layer (QDL2) can convert a portion of the third light (light in the blue wavelength band) incident from the light emitting element (LE) into second light (light in the green wavelength band). It can include a second base resin (BRS2) and second wavelength conversion particles (WCP2). The second base resin (BRS2) can include a light-transmitting organic material. The second wavelength conversion particles (WCP2) can convert a portion of the third light (light in the blue wavelength band) incident from the light emitting element (LE) into second light (light in the green wavelength band).

[0179] The optically transparent layer (TPL) may include a light-transmitting organic material.

[0180] For example, the first base resin (BRS1), the second base resin (BRS2), and the light transmitting layer (TPL) may include an epoxy resin, an acrylic resin, a cardo resin, or an imide resin. The first and second wavelength conversion particles (WCP1, WCP2) may be quantum dots (QDs), quantum rods, fluorescent materials, or phosphorescent materials.

[0181] The light-blocking layer (BM) may include a first light-blocking layer (BM1) and a second light-blocking layer (BM2) that are sequentially laminated. The length of the first light-blocking layer (BM1) in the first direction (DR1) or the length of the second direction (DR2) may be wider than the length of the second light-blocking layer (BM2) in the first direction (DR1) or the length of the second light-blocking layer (BM2) in the second direction (DR2). The first light-blocking layer (BM1) and the second light-blocking layer (BM2) may be formed of an organic film such as an acrylic resin, an epoxy resin, a phenolic resin, a polyamide resin, or a polyimide resin. The first light-blocking layer (BM1) and the second light-blocking layer (BM2) may include a light-blocking material to prevent light from a light-emitting element (LE) of a sub-pixel from propagating to an adjacent sub-pixel. For example, the first shading layer (BM1) and the second shading layer (BM2) may include an inorganic black pigment such as carbon black or an organic black pigment.

[0182] The second capping layer (CAP2) may be disposed on the first capping layer (CAP1) and the light-shielding layer (BM). The second capping layer (CAP2) may be disposed on the side surface and the upper surface of the light-shielding layer (BM). For example, the second capping layer (CAP2) may be disposed on the side surface of the first light-shielding layer (BM1) and the side surface and the upper surface of the second light-shielding layer (BM2).

[0183] A reflective film (RF) may be disposed between a light-shielding layer (BM) and a first light conversion layer (QDL1), between a light-shielding layer (BM) and a second light conversion layer (QDL2), and between a light-shielding layer (BM) and a light-transmitting layer (TPL). The reflective film (RF) may be disposed on a second capping layer (CAP2) disposed on a side surface of the first light-shielding layer (BM1) and a side surface of the second light-shielding layer (BM2). The reflective film (RF) serves to reflect light that propagates in a lateral direction in the first light-conversion layer (QDL1), the second light-conversion layer (QDL2), and the light-transmitting layer (TPL).

[0184] The reflective film (RF) may include a highly reflective metal material, such as aluminum (Al). The thickness of the reflective film (RF) may be approximately 0.1 μm.

[0185] Alternatively, the reflective film (RF) may include M pairs of first and second layers having different refractive indices (M is an integer greater than or equal to 2) to function as Distributed Bragg Reflectors (DBR). In this case, the M first layers and the M second layers may be arranged alternately. The first and second layers may be formed of an inorganic film, for example, silicon nitride (SiNx), silicon nitride oxide (SiON), silicon oxide (SiOx), titanium oxide (TiOx), or aluminum oxide (AlOx).

[0186] The third capping layer (CAP3) can be disposed on the second capping layer (CAP2), the first light conversion layer (QDL1), the second light conversion layer (QDL2), and the light transmitting layer (TPL).

[0187] The first capping layer (CAP1), the second capping layer (CAP2), and the third capping layer (CAP3) may be formed of an inorganic film, such as silicon nitride (SiNx), silicon nitride oxide (SiON), silicon oxide (SiOx), titanium oxide (TiOx), or aluminum oxide (AlOx). The first light conversion layer (QDL1), the second light conversion layer (QDL2), and the light transmitting layer (TPL) may be encapsulated by the first capping layer (CAP1), the second capping layer (CAP2), and the third capping layer (CAP3).

[0188] A fifth organic film (213) may be disposed on the third capping layer (CAP3). A plurality of color filters (CF1, CF2, CF3) may be disposed on the fifth organic film (213). The plurality of color filters (CF1, CF2, CF3) may include first color filters (CF1), second color filters (CF2), and third color filters (CF3).

[0189] The first color filter (CF1) arranged in the first sub-pixel (SPX1) can transmit the first light (for example, light in the red wavelength band) and absorb or block the third light (for example, light in the blue wavelength band). Therefore, the first color filter (CF1) can transmit the first light (for example, light in the red wavelength band) converted by the first light conversion layer (QDL1) among the third light (for example, light in the blue wavelength band) emitted from the light-emitting element (LE), and absorb or block the third light (for example, light in the blue wavelength band) not converted by the first light conversion layer (QDL1). Therefore, the first sub-pixel (SPX1) can emit the first light (for example, light in the red wavelength band).

[0190] The second color filter (CF2) arranged in the second sub-pixel (SPX2) can transmit the second light (for example, light in the green wavelength band) and absorb or block the third light (for example, light in the blue wavelength band). Therefore, the second color filter (CF2) can transmit the second light (for example, light in the green wavelength band) converted by the first light conversion layer (QDL1) among the third light (for example, light in the blue wavelength band) emitted from the light-emitting element (LE), and absorb or block the third light (for example, light in the blue wavelength band) not converted by the first light conversion layer (QDL1). Therefore, the second sub-pixel (SPX2) can emit the second light (for example, light in the green wavelength band).

[0191] The third color filter (CF3) arranged in the third sub-pixel (SPX3) can transmit third light (for example, light in the blue wavelength band). Therefore, the third color filter (CF3) can transmit third light (for example, light in the blue wavelength band) emitted from the light-emitting element (LE) passing through the light-transmitting layer (TPL). Therefore, the third sub-pixel (SPX3) can emit third light (for example, light in the blue wavelength band).

[0192] The first color filter (CF1), the second color filter (CF2), and the third color filter (CF3) overlapping in the third direction (DR3) can overlap the light-shielding layer (BM) in the third direction (DR3).

[0193] A sixth organic film (214) for planarization may be placed on a plurality of color filters (CF1, CF2, CF3).

[0194] The fifth organic film (213) and the sixth organic film (214) can be formed of acrylic resin, epoxy resin, phenolic resin, polyamide resin, polyimide resin, etc.

[0195] Fig. 8 is a cross-sectional view showing an example of a cross-section of a display panel corresponding to line I1-I1' of Fig. 5. Fig. 9 is a cross-sectional view showing an example of a cross-section of a display panel corresponding to line I1-I1' of Fig. 5.

[0196] FIGS. 8 and 9 show embodiments that are different from the embodiment of FIG. 6 in relation to a light-emitting element layer including light-emitting elements (LE). In addition, FIGS. 8 and 9 show embodiments that are different from each other in relation to a reflective film (RF). In describing the embodiments of FIGS. 8 and 9, any description that overlaps with the embodiment of FIG. 6 will be omitted.

[0197] Referring to FIGS. 8 and 9, each of the light emitting elements (LE) may include a main body (CBD) and a bonding electrode (BDE) disposed on a lower surface of the main body (CBD). The main body (CBD) may be an LED chip body including an active layer (MQW of FIG. 11), etc.

[0198] Each light emitting element (LE) can be placed on a pixel electrode (or a bonding pad connected to the pixel electrode) of a corresponding sub-pixel (SPX) by a bonding electrode (BDE). For example, the light emitting elements (LE) can be stably placed on the pixel electrodes (PXE1, PXE2, PXE3) by a bonding method such as eutectic bonding. In one embodiment, the pixel electrodes (PXE1, PXE2, PXE3) can be formed of multiple layers including a metal layer, but are not limited thereto.

[0199] The main body (CBD) of each light emitting element (LE) may be electrically connected to the pixel electrode of each sub-pixel (SPX) through a bonding electrode (BDE). The display panel (100) according to the embodiment of FIG. 8 may not include the first organic film (210) and / or the fourth organic film (212) of FIG. 6, and the connection electrodes (BE) of FIG. 6.

[0200] In one embodiment, a portion of each of the light emitting elements (LE) may be positioned higher than the third organic film (211) and may be surrounded by the first light conversion layer (QDL1), the second light conversion layer (QDL2), or the light transmitting layer (TPL). For example, the display panel (100) according to the embodiment of FIG. 8 or FIG. 9 may not include the fourth organic film (212) of FIG. 6, and the light emitting elements (LE) may protrude above the third organic film (211).

[0201] The first light conversion layer (QDL1), the second light conversion layer (QDL2), and the light transmitting layer (TPL) may be arranged in the light emitting areas of the sub-pixels (SPX) partitioned by the light-shielding layer (BM). For example, the first light conversion layer (QDL1), the second light conversion layer (QDL2), and the light transmitting layer (TPL) may be arranged in the light emitting area of ​​the first sub-pixel (SPX1), the light emitting area of ​​the second sub-pixel (SPX2), and the light emitting area of ​​the third sub-pixel (SPX3), respectively. The first light conversion layer (QDL1), the second light conversion layer (QDL2), and the light transmitting layer (TPL) may be covered with a third capping layer (CAP3).

[0202] In one embodiment, the surfaces of the first light conversion layer (QDL1), the second light conversion layer (QDL2), and the light transmitting layer (TPL) may have a curve. For example, the upper surfaces of the first light conversion layer (QDL1), the second light conversion layer (QDL2), and the light transmitting layer (TPL) may include a curved surface in the shape of a lens (for example, a convex lens). Accordingly, the light output efficiency of the sub-pixels (SPX1, SPX2, and SPX3) may be increased. However, the embodiments are not limited thereto, and the upper surface of at least one of the first light conversion layer (QDL1), the second light conversion layer (QDL2), and the light transmitting layer (TPL) may be substantially flat. The shape or size (for example, area, height, or volume) of each of the first light conversion layer (QDL1), the second light conversion layer (QDL2), and the light transmitting layer (TPL) may vary depending on the embodiments. In one embodiment, the light emission characteristics of the sub-pixels (SPX) can be controlled or changed by adjusting the shape or size of the first light conversion layer (QDL1), the second light conversion layer (QDL2), and the light transmitting layer (TPL).

[0203] The light-shielding layer (BM) can surround the first light conversion layer (QDL1), the second light conversion layer (QDL2), and the light-transmitting layer (TPL). The height of the light-shielding layer (BM) can be substantially the same as or similar to the heights of the first light conversion layer (QDL1), the second light conversion layer (QDL2), and the light-transmitting layer (TPL), but is not limited thereto.

[0204] The shading layer (BM) may be formed as a single layer or as multiple layers. For example, the shading layer (BM) may be formed as a single layer or as multiple layers including a first shading layer (BM1) and a second shading layer (BM2), as in the embodiment of FIG. 6.

[0205] The shading layer (BM) may include vertical sides or, as in the embodiment of FIG. 6, inclined sides. The shape, height, or structure of the shading layer (BM) may vary depending on the embodiments.

[0206] The display panel (100) according to the embodiments may or may not include a reflective film (RF) disposed on a light-shielding layer (BM). For example, as illustrated in FIG. 8, a third capping layer (CAP3) may be directly disposed on a second capping layer (CAP2) covering the light-shielding layer (BM), or as illustrated in FIG. 9, a reflective film (RF) and a third capping layer (CAP3) may be sequentially disposed on the second capping layer (CAP2). The reflective film (RF) may cover at least a side surface of the light-shielding layer (BM). For example, the reflective film (RF) may cover the side surface and the upper surface of the light-shielding layer (BM).

[0207] A fifth organic film (213), color filters (CF1, CF2, CF3), and a sixth organic film (214) can be arranged on the third capping layer (CAP3).

[0208] Fig. 10 is a cross-sectional view showing an example of a cross-section of a display panel corresponding to line I1-I1' of Fig. 5.

[0209] The embodiment of FIG. 10 differs from the embodiment of FIG. 9 in that the display panel (100) additionally includes a lower shading layer (BM). In describing the embodiments below, including FIG. 10, any description that overlaps with the previously described embodiments will be omitted.

[0210] Referring to FIG. 10, the display panel (100) may further include a lower light-blocking layer (LBM) overlapping the light-blocking layer (BM). The lower light-blocking layer (LBM) may be disposed below the light-blocking layer (BM) and may surround a portion of the side surfaces of the light-emitting elements (LE). For example, the lower light-blocking layer (LBM) may surround a lower portion of the light-emitting elements (LE) (for example, a portion disposed below the height of the third organic film (211)).

[0211] In one embodiment, the shading layer (BM) and the lower shading layer (LBM) may have substantially the same width and shape (e.g., a planar shape) and may overlap each other. Alternatively, the shading layer (BM) and the lower shading layer (LBM) may have different widths and / or shapes and may at least partially overlap each other.

[0212] The light-shielding layer (BM) and the lower light-shielding layer (LBM) may include the same light-shielding material or different light-shielding materials. In one embodiment, the lower light-shielding layer (LBM) may be formed of an organic film such as an acrylic resin, an epoxy resin, a phenolic resin, a polyamide resin, or a polyimide resin, and may include a light-shielding material. For example, the lower light-shielding layer (LBM) may include an inorganic black pigment such as carbon black or an organic black pigment.

[0213] Fig. 11 is a cross-sectional view showing in detail an example of area B of Fig. 8. For example, Fig. 11 shows a light emitting element (LE) including a bonding electrode (BDE).

[0214] Referring to FIG. 11, the light emitting element (LE) may include a body portion (CBD) and a bonding electrode (BDE). In one embodiment, the light emitting element (LE) may further include a first reflective film (RFL1) disposed between the body portion (CBD) and the bonding electrode (BDE).

[0215] The main body (CBD) may include a first semiconductor layer (SEM1), an active layer (MQW), and a second semiconductor layer (SEM2) sequentially arranged along one direction (for example, a third direction (DR)). In one embodiment, the main body (CBD) may further include a conductive layer (E1) arranged on one surface (for example, a lower surface) of the first semiconductor layer (SEM1), and a protective film (INS) covering side surfaces of the first semiconductor layer (SEM1), the active layer (MQW), and the second semiconductor layer (SEM2).

[0216] In one embodiment, the conductive layer (E1) may have a shape and / or size corresponding to the first semiconductor layer (SEM1), the active layer (MQW), and the second semiconductor layer (SEM2). For example, the conductive layer (E1) may be etched and patterned together with the first semiconductor layer (SEM1), the active layer (MQW), and the second semiconductor layer (SEM2) on a manufacturing substrate (e.g., a semiconductor substrate for growing semiconductor layers) for manufacturing light emitting elements (LE). Accordingly, the conductive layer (E1) may have a planar shape and size corresponding to the planar shape and size (e.g., area) of the first semiconductor layer (SEM1), the active layer (MQW), and the second semiconductor layer (SEM2). However, the shape or size of the conductive layer (E1) may vary depending on the embodiments. The conductive layer (E1) may include any one of molybdenum (Mo), aluminum (Al), chromium (Cr), gold (Au), titanium (Ti), nickel (Ni), neodymium (Nd), and copper (Cu). Alternatively, the conductive layer (E1) may include a transparent conductive material such as a metal oxide.

[0217] In one embodiment, the protective film (INS) can further surround the conductive layer (E1). For example, the protective film (INS) can surround the side surfaces of the conductive layer (E1), the first semiconductor layer (SEM1), the active layer (MQW), and the second semiconductor layer (SEM2).

[0218] In one embodiment, the protective film (INS) may partially cover the lower surface of the conductive layer (E1). For example, the protective film (INS) may cover the edge portion of the lower surface of the conductive layer (E1) and may include an opening exposing the central portion of the conductive layer (E1). However, the embodiments are not limited thereto. For example, the protective film (INS) may only cover the side surfaces of the conductive layer (E1) or may not cover the conductive layer (E1).

[0219] In one embodiment, the main body (CBD) may have a rectangular cross-sectional shape, such as a square, rectangular, or trapezoidal shape. For example, the main body (CBD) may be a vertical micro LED chip having a square or rectangular cross-sectional shape. Alternatively, the main body (CBD) may have a trapezoidal cross-sectional shape with a reverse taper (or taper), as in the embodiment of FIG. 7. The type, shape, or size of the main body (CBD) may vary depending on the embodiments.

[0220] The bonding electrode (BDE) may include a conductive material suitable for bonding (e.g., a bonding metal). In one embodiment, the bonding electrode (BDE) may be disposed on a lower surface of the first reflective film (RFL1) and may be electrically connected to the conductive layer (E1) through the first reflective film (RFL1). The bonding electrode (BDE) may be bonded onto each pixel electrode (e.g., the first pixel electrode (PXE1), the second pixel electrode (PXE2), or the third pixel electrode (PXE3)) and may be electrically connected to the pixel electrodes.

[0221] The first reflective film (RFL1) may be disposed on the lower surface of the main body (CBD). The first reflective film (RFL1) may include a metal having high light reflectivity. For example, the first reflective film (RFL1) may be formed of at least one metal layer including at least one metal having high reflectivity, such as aluminum (Al), molybdenum (Mo), titanium (Ti), copper (Cu), silver (Ag), magnesium (Mg), platinum (Pt), palladium (Pd), gold (Au), nickel (Ni), neodymium (Nd), iridium (Ir), or chromium (Cr), or other reflective material. In one embodiment, the first reflective film (RFL1) may be formed of a multilayer including, but not limited to, a reflective metal layer and a conductive bonding layer disposed on at least one surface of the reflective metal layer.

[0222] Light generated from the light emitting element (LE) and directed toward the lower portion of the main body (CBD) can be reflected by the first reflective film (RFL1) and emitted toward the upper portion of the light emitting element (LE). Accordingly, the light emission efficiency of the light emitting element (LE) can be increased.

[0223] Fig. 12 is a cross-sectional view showing in detail an example of area B of Fig. 8. Fig. 13 is a cross-sectional view showing in detail an example of area B of Fig. 8.

[0224] For example, FIGS. 12 and 13 show a light emitting device including a second reflective film (RFL2). FIGS. 12 and 13 also show different embodiments with respect to the protective film (INS).

[0225] Referring to FIGS. 12 and 13, the main body (CBD) may further include a second reflective film (RFL2) covering the side surfaces of the conductive layer (E1), the first semiconductor layer (SEM1), the active layer (MQW), and the second semiconductor layer (SEM2).

[0226] The second reflective film (RFL2) may include a distributed Bragg reflector including at least one pair of first layers (e.g., a low-refractive-index layer) and second layers (e.g., a high-refractive-index layer) that are arranged sequentially or alternately and have different refractive indices. The second reflective film (RFL2) may reflect light generated from the light-emitting element (LE) and propagated in the lateral direction of the main body (CBD).

[0227] In one embodiment, the second reflective film (RFL2) may be formed of multiple layers of insulating films including an insulating material. For example, the second reflective film (RFL2) may include inorganic films (for example, inorganic insulating films formed of silicon nitride (SiNx), silicon nitride oxide (SiON), silicon oxide (SiOx), titanium oxide (TiOx), or aluminum oxide (AlOx)).

[0228] In one embodiment, the main body (CBD) includes a protective film (INS) that surrounds the side surfaces of the conductive layer (E1), the first semiconductor layer (SEM1), the active layer (MQW), and the second semiconductor layer (SEM2), as illustrated in FIG. 12, and a second reflective film (RFL2) may be disposed on the outer surface of the protective film (INS). For example, the second reflective film (RFL2) may surround the side surfaces of the protective film (INS).

[0229] Alternatively, the main body (CBD) may not include a separate protective film (INS). For example, as illustrated in FIG. 13, the second reflective film (RFL2) may directly cover the side surfaces of the conductive layer (E1), the first semiconductor layer (SEM1), the active layer (MQW), and the second semiconductor layer (SEM2). The second reflective film (RFL2) may not only reflect light generated from the light-emitting element (LE) and propagate toward the side surface of the main body (CBD), but also protect the conductive layer (E1), the first semiconductor layer (SEM1), the active layer (MQW), and the second semiconductor layer (SEM2).

[0230] In one embodiment, the second reflective film (RFL2) may partially cover the lower surface of the conductive layer (E1). For example, the second reflective film (RFL2) may cover an edge portion of the lower surface of the conductive layer (E1) and may include an opening exposing a central portion of the conductive layer (E1). On the lower surface of the conductive layer (E1), a portion of the first reflective film (RFL1) and a portion of the second reflective film (RFL2) may overlap each other. The side surfaces and lower surfaces of the conductive layer (E1), the first semiconductor layer (SEM1), the active layer (MQW), and the second semiconductor layer (SEM2) may be covered by the first reflective film (RFL1) and the second reflective film (RFL2).

[0231] Accordingly, light generated from the light emitting element (LE) and propagating in the lower and lateral directions of the main body (CBD) can be reflected by the first reflective film (RFL1) and the second reflective film (RFL2) and emitted in the upper direction of the light emitting element (LE). Accordingly, the amount of light emitted through the light-emitting surface of the light emitting element (LE) (for example, the upper surface of the main body (CBD)) can be further increased. Accordingly, the light emission efficiency of the light emitting elements (LE) and the sub-pixels (PX) including the light emitting elements (LE) can be effectively improved.

[0232] Fig. 14 is a layout diagram showing pixels of a display area according to one embodiment. For example, Fig. 14 shows a unit pixel area (UPA) of a pixel (PX) including light-emitting elements (LE) each including bonding electrodes (BDE).

[0233] Fig. 15 is a cross-sectional view showing an example of a cross-section of a display panel corresponding to the line I2-I2' of Fig. 14. Fig. 16 is a cross-sectional view showing an example of a cross-section of a display panel corresponding to the line I2-I2' of Fig. 14. For example, Figs. 15 and 16 show cross-sections of one sub-pixel (SPX), for example, the first sub-pixel (SPX1) of Fig. 14, and show different embodiments with respect to the reflective film (RF). As an example, Fig. 15 shows a display panel (100) that does not include the reflective film (RF), and Fig. 16 shows a display panel (100) that includes the reflective film (RF).

[0234] Figures 15 and 16 show a capacitor (C1) and a second source connection electrode (PCE2) as examples of elements that can be placed on a thin film transistor layer (TFTL). The elements that can be placed on a thin film transistor layer (TFTL) within a sub-pixel (SPX) may vary depending on the pixel circuit of the sub-pixel (SPX) or the design structure of the thin film transistor layer (TFTL).

[0235] Referring to FIGS. 14 to 16, each sub-pixel (SPX) may include a plurality of light-emitting elements (LE). For example, each of the first sub-pixel (SPX1), the second sub-pixel (SPX2), and the third sub-pixel (SPX3) may include a first light-emitting element (LE1) and a second light-emitting element (LE2). The first light-emitting element (LE1) and the second light-emitting element (LE2) of each sub-pixel (SPX) may be arranged along the second direction (DR2), but are not limited thereto. The first light-emitting element (LE1) and the second light-emitting element (LE2) may be light-emitting elements (LE) of substantially the same type, structure, and / or size, but are not limited thereto.

[0236] Each light emitting element (LE) may include a body portion (CBD) and a bonding electrode (BDE). For example, a first light emitting element (LE1) may include a first body portion (CBD1) including a first semiconductor layer (SEM1), an active layer (MQW), a second semiconductor layer (SEM2), etc., and a first bonding electrode (BDE1) disposed on a lower surface of the first body portion (CBD1). A second light emitting element (LE2) may include a second body portion (CBD2) including a first semiconductor layer (SEM1), an active layer (MQW), a second semiconductor layer (SEM2), etc., and a second bonding electrode (BDE2) disposed on a lower surface of the second body portion (CBD2).

[0237] Each light emitting element (LE) may further include at least one of the first reflective film (RFL1) and the second reflective film (RFL2) described in the embodiments of FIGS. 11 to 13. The first reflective film (RFL1) may be disposed between the main body (CBD) and the bonding electrode (BDE). The second reflective film (RFL2) may be considered as an element included in the main body (CBD) or as an element disposed on the outer surface of the main body (CBD) separately from the main body (CBD).

[0238] Each light emitting element (LE) may be disposed on a pixel electrode of each sub-pixel (SPX). For example, the first light emitting element (LE1) and the second light emitting element (LE2) of the first sub-pixel (SPX1) may be disposed on the first pixel electrode (PXE1). The first light emitting element (LE1) and the second light emitting element (LE2) of the second sub-pixel (SPX2) may be disposed on the second pixel electrode (PXE2). The first light emitting element (LE1) and the second light emitting element (LE2) of the third sub-pixel (SPX3) may be disposed on the third pixel electrode (PXE3).

[0239] At least one of the light emitting elements (LE) of each sub-pixel (SPX) may be tilted relative to each pixel electrode. For example, at least one of the light emitting elements (LE) of each sub-pixel (SPX) may be bonded to the pixel electrode so as to be tilted relative to each pixel electrode.

[0240] In one embodiment, at least one of the light emitting elements (LE) of each sub-pixel (SPX) may be arranged on the pixel electrode so as to be inclined by ±5° or more with respect to a direction perpendicular to each pixel electrode (for example, a third direction (DR3)). For example, an angle formed between a body portion (CBD) of at least one of the light emitting elements (LE) of each sub-pixel (SPX) and the pixel electrode of the sub-pixel (SPX) may be 85° or less or 95° or more. Accordingly, the at least one light emitting element (LE) may be arranged within each sub-pixel (SPX) in a substantially inclined form.

[0241] In one embodiment, in each of the sub-pixels (SPX) forming the pixel (PX), at least one light-emitting element (LE) may be tilted or bonded on the pixel electrode. For example, at least one of the body parts (CBD) of the first light-emitting element (LE1) of the first sub-pixel (SPX1) and the second light-emitting element (LE2) may not be arranged substantially perpendicular to the first pixel electrode (PXE1) but may be tilted by ±5° or more. Similarly, at least one of the body parts (CBD) of the first light-emitting element (LE1) of the second sub-pixel (SPX2) may not be arranged substantially perpendicular to the second pixel electrode (PXE2) but may be tilted by ±5° or more. At least one of the main body parts (CBD) of the first light-emitting element (LE1) and the second light-emitting element (LE2) of the third sub-pixel (SPX3) may not be arranged substantially perpendicular to the third pixel electrode (PXE3) but may be arranged at an angle of ±5° or more.

[0242] However, the embodiments are not limited thereto. For example, in at least one sub-pixel (SPX) among the sub-pixels (SPX) forming the pixel (PX), at least one light-emitting element (LE) may be arranged at an angle, and in other sub-pixels (SPX), the light-emitting elements (LE) may be arranged substantially vertically.

[0243] In one embodiment, the first light-emitting element (LE1) and the second light-emitting element (LE2) of each sub-pixel (SPX) may be arranged to be inclined toward the center of each sub-pixel (SPX) (for example, the center of the light-emitting area of ​​each sub-pixel (SPX) where each pixel electrode, and the first light-conversion layer (QDL1), the second light-conversion layer (QDL2), or the light-transmitting layer (TPL) are arranged and surrounded by the light-blocking layer (BM). For example, the first light-emitting element (LE1) and the second light-emitting element (LE2) of the first sub-pixel (SPX1) may not be arranged substantially perpendicularly on the first pixel electrode (PXE1), but may be arranged to be inclined by ±5° or more toward the center of the first sub-pixel (SPX1). In this case, the central axis of each of the main body parts (CBD) of the first light-emitting element (LE1) and the second light-emitting element (LE2) can be tilted by ±5° or more with respect to a direction perpendicular to the first pixel electrode (PXE1) (for example, the third direction (DR3)).

[0244] In one embodiment, when the first light-emitting element (LE1) and the second light-emitting element (LE2) are tilted toward the center of the sub-pixel (SPX), the angles that the central axes of the first light-emitting element (LE1) and the second light-emitting element (LE2) form with respect to the third direction (DR3) or the directions in which they are tilted with respect to the third direction (DR3) may be different from each other. For example, the central axis of the first main body (CBD1) of the first light-emitting element (LE1) may be tilted by +5° or more with respect to the third direction (DR3), and the central axis of the second main body (CBD2) of the second light-emitting element (LE2) may be tilted by -5° or more with respect to the third direction (DR3).

[0245] In one embodiment, when the main body (CBD) of each of the first light-emitting element (LE1) and the second light-emitting element (LE2) has a substantially rectangular or square cross-section, the angle (θ1, θ2) formed by the side surface of the main body (CBD) of each of the first light-emitting element (LE1) and the second light-emitting element (LE2) toward the center of the first sub-pixel (SPX1) with respect to the first pixel electrode (PXE1) may be an acute angle of 85° or less. Conversely, the angle formed by the side surface of the main body (CBD) of each of the first light-emitting element (LE1) and the second light-emitting element (LE2) toward the outer surface of the first sub-pixel (SPX1) with respect to the first pixel electrode (PXE1) may be an obtuse angle of 95° or more. The angles at which the main bodies (CBD) of the first light-emitting element (LE1) and the second light-emitting element (LE2) are inclined may be the same as or different from each other. For example, the angle at which each of the first light-emitting element (LE1) and the second light-emitting element (LE2) is tilted can be adjusted or changed in consideration of the light efficiency of each sub-pixel (SPX) or the desired direction of light collection.

[0246] In one embodiment, each of the first light-emitting element (LE1) and the second light-emitting element (LE2) may include a light-emitting surface (SF1, SF2) corresponding to an upper surface of the main body (CBD). When the first light-emitting element (LE1) and the second light-emitting element (LE2) are inclined toward the center of each sub-pixel (SPX), the light-emitting surfaces (SF1, SF2) of the first light-emitting element (LE1) and the second light-emitting element (LE2) may be inclined toward the center of each sub-pixel (SPX). For example, the light-emitting surfaces (SF1, SF2) of the first light-emitting element (LE1) and the second light-emitting element (LE2) of the first sub-pixel (SPX1) may be inclined toward the center of the first sub-pixel (SPX1). For example, the light-emitting surfaces (SF1, SF2) of the first light-emitting element (LE1) and the second light-emitting element (LE2) of the first sub-pixel (SPX1) can be tilted at an angle of ±5° or more with respect to the first pixel electrode (PXE1) or a plane parallel to the first pixel electrode (PXE1).

[0247] Similarly, the light-emitting surfaces of the first light-emitting element (LE1) and the second light-emitting element (LE2) of the second sub-pixel (SPX2) may be inclined toward the center of the second sub-pixel (SPX2), and the light-emitting surfaces of the first light-emitting element (LE1) and the second light-emitting element (LE2) of the third sub-pixel (SPX3) may be inclined toward the center of the third sub-pixel (SPX3). In one embodiment, the direction or angular range in which the light-emitting elements (LE) of the sub-pixels (SPX1, SPX2, and SPX3) are inclined may be substantially the same or similar, but is not limited thereto.

[0248] In one embodiment, the direction or degree of tilt of the light emitting element (LE) can be controlled by adjusting at least one of the position, shape, and size (e.g., the area, thickness, or volume of the bonding electrode (BDE)) of the bonding electrode (BDE) in each light emitting element (LE). For example, the first bonding electrode (BDE1) may be arranged to be biased toward a portion close to the outer edge of each sub-pixel (SPX) (e.g., an area adjacent to the light-blocking layer (BM)) on the lower surface of the first main body (CBD1). For example, in the second direction (DR2), the first bonding electrode (BDE1) may be arranged to be biased toward the outer edge of each sub-pixel (SPX) with respect to the central axis of the first main body (CBD1). Accordingly, the first light emitting element (LE1) (or the first main body (CBD1)) may be arranged or bonded to be biased toward the center of each sub-pixel (SPX). Similarly, the second bonding electrode (BDE2) may be arranged to be tilted toward the outer edge of each sub-pixel (SPX) on the lower surface of the second main body (CBD2). For example, in the second direction (DR2), the second bonding electrode (BDE2) may be arranged to be tilted toward the outer edge of each sub-pixel (SPX) with respect to the central axis of the second main body (CBD2). Accordingly, the second light-emitting element (LE2) (or the second main body (CBD2)) may be arranged or bonded in a tilted form toward the center of each sub-pixel (SPX).

[0249] In one embodiment, the bonding electrode (BDE) of the light-emitting element (LE) arranged at an angle within the sub-pixel (SPX) may have a thickness that gradually changes as it approaches the center or the periphery of the sub-pixel (SPX). For example, when the first light-emitting element (LE1) of the first sub-pixel (SPX1) is arranged at an angle toward the center of the first sub-pixel (SPX1), the first bonding electrode (BDE1) of the first light-emitting element (LE1) may have a relatively large thickness in a portion adjacent to the periphery of the first sub-pixel (SPX1). Similarly, when the second light-emitting element (LE2) of the first sub-pixel (SPX1) is arranged at an angle toward the center of the first sub-pixel (SPX1), the second bonding electrode (BDE2) of the second light-emitting element (LE2) may have a relatively large thickness in a portion adjacent to the periphery of the first sub-pixel (SPX1).

[0250] In one embodiment, when forming the light emitting elements (LE), the bonding electrode (BDE) of each of the light emitting elements (LE) may be formed to a thickness of 1 μm or more. Accordingly, the light emitting elements (LE) can be appropriately or smoothly bonded onto the pixel electrodes (PXE1, PXE2, PXE3), and the light emitting elements (LE) can be appropriately or smoothly tilted and bonded within a desired angle range. However, the thickness of the bonding electrode (BDE) may be reduced during the bonding process. For example, after the light emitting element (LE) is bonded to the pixel electrode, the thickness of the bonding electrode (BDE) may be reduced to 1 μm or less, or the bonding electrode (BDE) may have a thickness of 1 μm or less in at least one portion (for example, a portion having a minimum thickness).

[0251] When at least one of the light emitting elements (LE) of the sub-pixel (SPX) is tilted toward the center of the sub-pixel (SPX), the amount of light generated from the at least one light emitting element (LE) that propagates toward the center of the sub-pixel (SPX) may increase. For example, as the light-emitting surfaces (SF1, SF2) of the first light emitting element (LE1) and the second light emitting element (LE2) are tilted toward the center of the sub-pixel (SPX), the light emitted from the first light emitting element (LE1) and the second light emitting element (LE2) may be more concentrated toward the center of the sub-pixel (SPX).

[0252] Due to this light gathering effect, the light output efficiency of the sub-pixel (SPX) can be improved. For example, the light emitted from the first light-emitting element (LE1) and the second light-emitting element (LE2) that is absorbed by the light-shielding layer (BM) or leaks into the thin film transistor layer (TFTL) or the like can be reduced. In addition, the light emitted from the first light-emitting element (LE1) and the second light-emitting element (LE2) can be more effectively gathered by the first light conversion layer (QDL1), the second light conversion layer (QDL2) or the light transmitting layer (TPL) included in each sub-pixel (SPX). Accordingly, the amount of light emitted from the sub-pixel (SPX) can increase.

[0253] Fig. 17 is a layout diagram showing pixels of a display area according to one embodiment. Fig. 18 is a cross-sectional view showing an example of a cross-section of a display panel corresponding to line I3-I3' of Fig. 17.

[0254] FIGS. 17 and 18 show embodiments that differ from the embodiments of FIGS. 14 to 16 in terms of the direction in which the light emitting elements (LE) are tilted.

[0255] Referring to FIGS. 17 and 18, a light-shielding layer (BM) may be disposed around a light-emitting area of ​​each sub-pixel (SPX) in which pixel electrodes and light-emitting elements (LE) are disposed. For example, the light-shielding layer (BM) may surround a light-emitting area of ​​each sub-pixel (SPX). A reflective film (RF) may be disposed on the light-shielding layer (BM) (or a second capping layer (CAP2) covering the light-shielding layer (BM)). The reflective film (RF) may be disposed on a side surface of the light-shielding layer (BM) and may surround a light-emitting area of ​​each sub-pixel (SPX). In one embodiment, the reflective film (RF) may also be disposed on an upper surface of the light-shielding layer (BM).

[0256] At least one of the light emitting elements (LE) of at least one sub-pixel (SPX) may be tilted relative to each pixel electrode. For example, at least one of the light emitting elements (LE) of at least one sub-pixel (SPX) may be bonded to the pixel electrode so as to be tilted relative to each pixel electrode.

[0257] In one embodiment, at least one of the body portions (CBD) of the first light-emitting element (LE1) and the second light-emitting element (LE2) of the first sub-pixel (SPX1) can be tilted by ±5° or more with respect to a third direction (DR3) that is substantially perpendicular to the first pixel electrode (PXE1). In one embodiment, the body portion (CBD) of at least one of the light-emitting elements (LE) of the second sub-pixel (SPX2) and the third sub-pixel (SPX3) can be arranged or bonded to be tilted with respect to each pixel electrode (for example, the second pixel electrode (PXE2) or the third pixel electrode (PXE3)). For example, at least one of the body portions (CBD) of the first light-emitting element (LE1) and the second light-emitting element (LE2) of the second sub-pixel (SPX2) and the third sub-pixel (SPX3) can be tilted by ±5° or more with respect to the third direction (DR3).

[0258] In one embodiment, the light-emitting surfaces (SF1, SF2) of the light-emitting elements (LE) arranged to be inclined within the sub-pixels (SPX) may be inclined toward the outer edges of the sub-pixels (SPX). For example, the light-emitting surfaces (SF1, SF2) of the first light-emitting element (LE1) and the second light-emitting element (LE2) of the first sub-pixel (SPX1) may be inclined toward the reflective film (RF) arranged around the first sub-pixel (SPX1). For example, the light-emitting surfaces (SF1, SF2) of the first light-emitting element (LE1) and the second light-emitting element (LE2) of the first sub-pixel (SPX1) may be inclined toward the outer edges of the sub-pixel (SPX) at an angle of ±5° or more with respect to the first pixel electrode (PXE1) or a plane parallel to the first pixel electrode (PXE1). In one embodiment, the light-emitting surfaces of the first light-emitting element (LE1) and the second light-emitting element (LE2) of each of the second sub-pixel (SPX2) and the third sub-pixel (SPX3) may also be tilted by ±5° or more toward the light-shielding layer (BM) and the reflective film (RF).

[0259] In one embodiment, when the first light-emitting element (LE1) and the second light-emitting element (LE2) are inclined toward the outer side of the sub-pixel (SPX), the angles that the central axes of the first light-emitting element (LE1) and the second light-emitting element (LE2) form with respect to the third direction (DR3) or the directions in which they are inclined with respect to the third direction (DR3) may be different from each other. For example, the central axis of the first main body (CBD1) of the first light-emitting element (LE1) may be inclined by -5° or more with respect to the third direction (DR3), and the central axis of the second main body (CBD2) of the second light-emitting element (LE2) may be inclined by +5° or more with respect to the third direction (DR3).

[0260] In one embodiment, when the main body portions (CBDs) of the first light-emitting element (LE1) and the second light-emitting element (LE2) each have a substantially rectangular or square cross-section, the angle formed by the side surface of the main body portions (CBDs) of the first light-emitting element (LE1) and the second light-emitting element (LE2) toward the center of the first sub-pixel (SPX1) with respect to the first pixel electrode (PXE1) may be an obtuse angle of 95° or more. Conversely, the angle formed by the side surface of the main body portions (CBDs) of the first light-emitting element (LE1) and the second light-emitting element (LE2) toward the outer surface of the first sub-pixel (SPX1) with respect to the first pixel electrode (PXE1) may be an acute angle of 85° or less. The angles at which the main body portions (CBDs) of the first light-emitting element (LE1) and the second light-emitting element (LE2) are inclined may be the same as or different from each other. For example, considering the light efficiency of the sub-pixel (SPX), etc., the angle at which each of the first light-emitting element (LE1) and the second light-emitting element (LE2) is tilted toward the outer edge of the sub-pixel (SPX) can be adjusted or changed.

[0261] In one embodiment, the first bonding electrode (BDE1) may be arranged to be offset toward a portion closer to the center of the sub-pixel (SPX) on the lower surface of the first main body (CBD1). For example, in the second direction (DR2), the first bonding electrode (BDE1) may be arranged to be offset toward the center of the sub-pixel (SPX) with respect to the central axis of the first main body (CBD1). Accordingly, the first light-emitting element (LE1) (or the first main body (CBD1)) may be arranged or bonded to be inclined toward the outer surface or the reflective film (RF) of the sub-pixel (SPX). Similarly, the second bonding electrode (BDE2) may be arranged to be offset toward the center of the sub-pixel (SPX) on the lower surface of the second main body (CBD2). Accordingly, the second light-emitting element (LE2) (or the second main body (CBD2)) may be arranged or bonded in a tilted manner toward the outer periphery of the sub-pixel (SPX) or the reflective film (RF).

[0262] In one embodiment, the bonding electrode (BDE) of the light-emitting element (LE) arranged at an angle within the sub-pixel (SPX) may have a thickness that gradually changes as it approaches the center or the periphery of the sub-pixel (SPX). For example, when the first light-emitting element (LE1) of the first sub-pixel (SPX1) is arranged at an angle toward the periphery of the first sub-pixel (SPX1), the first bonding electrode (BDE1) of the first light-emitting element (LE1) may have a relatively large thickness in a portion closer to the center of the first sub-pixel (SPX1). Similarly, when the second light-emitting element (LE2) of the first sub-pixel (SPX1) is arranged at an angle toward the periphery of the first sub-pixel (SPX1), the second bonding electrode (BDE2) of the second light-emitting element (LE2) may have a relatively large thickness in a portion closer to the center of the first sub-pixel (SPX1).

[0263] When at least one of the light emitting elements (LE) of the sub-pixel (SPX) is tilted toward the outer periphery of the sub-pixel (SPX), the amount of light generated from the at least one light emitting element (LE) that advances toward the reflective film (RF) may increase. For example, as the light-emitting surfaces (SF1, SF2) of the first light emitting element (LE1) and the second light emitting element (LE2) are tilted toward the outer periphery of the sub-pixel (SPX), the light emitted from the first light emitting element (LE1) and the second light emitting element (LE2) may be more dispersed toward the reflective film (RF).

[0264] Accordingly, the amount of light reflected from the reflective film (RF) may increase, thereby improving the light output efficiency of the sub-pixel (SPX). For example, among the light emitted from the first light-emitting element (LE1) and the second light-emitting element (LE2), the amount of light reflected by the reflective film (RF) and incident on the first light conversion layer (QDL1), the second light conversion layer (QDL2), or the light transmitting layer (TPL) may increase. Accordingly, the amount of light emitted from the sub-pixel (SPX) may increase.

[0265] Fig. 19 is a layout diagram showing pixels of a display area according to one embodiment. Fig. 20 is a cross-sectional view showing an example of a cross-section of a display panel corresponding to line I4-I4' of Fig. 19. Fig. 21 is a cross-sectional view showing an example of a cross-section of a display panel corresponding to line I4-I4' of Fig. 19.

[0266] FIGS. 19 to 21 show embodiments that are different from the embodiments of FIGS. 14 to 16 in terms of the number of light-emitting elements (LE) arranged in the sub-pixels (SPX1, SPX2, SPX3). FIGS. 20 and 21 show embodiments that are different from each other in terms of the reflective film (RF). For example, the display panel (100) may or may not include the reflective film (RF).

[0267] Fig. 22 is a layout diagram showing pixels of a display area according to one embodiment. Fig. 23 is a cross-sectional diagram showing an example of a cross-section of a display panel corresponding to line I5-I5' of Fig. 22.

[0268] FIGS. 22 and 23 show embodiments that differ from the embodiments of FIGS. 17 and 18 in terms of the number of light-emitting elements (LEs).

[0269] Referring to FIGS. 19 to 23, the sub-pixels SPX1, SPX2, and SPX3 may include three or more light-emitting elements LE. For example, each of the sub-pixels SPX1, SPX2, and SPX3 may further include a third light-emitting element LE3. For example, the first sub-pixel SPX1 may include a first light-emitting element LE1, a second light-emitting element LE2, and a third light-emitting element LE3 disposed on a first pixel electrode PXE1, the second sub-pixel SPX2 may include a first light-emitting element LE1, a second light-emitting element LE2, and a third light-emitting element LE3 disposed on a second pixel electrode PXE2, and the third sub-pixel SPX3 may include a first light-emitting element LE1, a second light-emitting element LE2, and a third light-emitting element LE3 disposed on a third pixel electrode PXE3.

[0270] The third light-emitting element (LE3) may be positioned at the center of the sub-pixel (SPX) compared to the first light-emitting element (LE1) and the second light-emitting element (LE2). For example, in each sub-pixel (SPX), the third light-emitting element (LE3) may be positioned between the first light-emitting element (LE1) and the second light-emitting element (LE2).

[0271] The third light-emitting element (LE3) may include a third body portion (CBD3) and a third bonding electrode (BDE3). The third body portion (CBD3) may include a first semiconductor layer (SEM1), an active layer (MQW), a second semiconductor layer (SEM2), and the like. The third bonding electrode (BDE3) may be disposed on a lower surface of the third body portion (CBD3). In one embodiment, the third light-emitting element (LE3) may further include at least one of the first reflective film (RFL1) and the second reflective film (RFL2) described in the embodiments of FIGS. 11 to 13.

[0272] In one embodiment, the third light-emitting element (LE3) may be arranged substantially vertically with respect to the pixel electrode. For example, the third light-emitting element (LE3) of the first sub-pixel (SPX1) may be arranged substantially vertically on the first pixel electrode (PXE1), the third light-emitting element (LE3) of the second sub-pixel (SPX2) may be arranged substantially vertically on the second pixel electrode (PXE2), and the third light-emitting element (LE3) of the third sub-pixel (SPX3) may be arranged substantially vertically on the third pixel electrode (PXE3). For example, the central axis of the third body portion (CBD3) of the third light-emitting element (LE3) may be positioned within an angular range of ±5° with respect to the third direction (DR3). In one embodiment, when the third main body portion (CBD3) has a substantially rectangular or square cross-section, the angle (θ3) formed by the side surface of the third main body portion (CBD3) and the pixel electrode may fall within a range of 85° to 95°. For example, the angle formed by the side surface of the third main body portion (CBD3) and the pixel electrode may be 90° or fall within a range of 86° to 94°.

[0273] In one embodiment, the third bonding electrode (BDE3) of the third light-emitting element (LE3) may have an overall uniform thickness. Accordingly, the third light-emitting element (LE3) may be stably positioned or bonded on the pixel electrode without being substantially tilted with respect to the third direction (DR3).

[0274] The third light-emitting element (LE3) may include a light-emitting surface (SF3) corresponding to the upper surface of the third main body (CBD3). In one embodiment, the light-emitting surface (SF3) of the third light-emitting element (LE3) may be arranged toward the upper portion of the sub-pixel (SPX). For example, the light-emitting surface (SF3) of the third light-emitting element (LE3) arranged in each of the sub-pixels (SPX1, SPX2, SPX3) may face the third direction (DR3).

[0275] In the embodiments of FIGS. 19 to 21, the light emitting elements (LE) of the sub-pixel (SPX) may be arranged toward the center of the sub-pixel (SPX). For example, the light-emitting surfaces (SF1, SF2, SF3) of the first light emitting element (LE1), the second light emitting element (LE2), and the third light emitting element (LE3) may be arranged toward the center of the first light conversion layer (QDL1), the second light conversion layer (QDL2), or the light transmitting layer (TPL) of the sub-pixel (SPX). Accordingly, the light emitted from the light emitting elements (LE) of the sub-pixel (SPX) may be gathered toward the center of the sub-pixel (SPX), and the light-emitting efficiency of the sub-pixel (SPX) may be improved by this light-gathering effect.

[0276] In the embodiments of FIGS. 22 and 23, among the light emitting elements (LE) of the sub-pixel (SPX), the light emitting elements (LE) arranged closer to the periphery of the sub-pixel (SPX) may be arranged toward the periphery of the sub-pixel (SPX). For example, the light-emitting surfaces (SF1, SF2) of the first light emitting element (LE1) and the second light emitting element (LE2) may be inclined in a direction more toward the reflective film (RF). Accordingly, the amount of light reflected from the reflective film (RF) may increase, thereby improving the light-emitting efficiency of the sub-pixel (SPX).

[0277] Fig. 24 is a cross-sectional view showing an example of a cross-section of a display panel corresponding to line I4-I4' of Fig. 19. Fig. 24 shows an embodiment that is different from the previously described embodiments (e.g., the embodiment of Fig. 21) in relation to the first light-emitting element (LE1) and the second light-emitting element (LE2).

[0278] Referring to FIG. 24, at least one of the main body parts (CBD1, CBD2) of the first light-emitting element (LE1) and the second light-emitting element (LE2) arranged in at least one sub-pixel (SPX) may be in contact with the pixel electrode of the corresponding sub-pixel (SPX). For example, the main body parts (CBD1, CBD2) of the first light-emitting element (LE1) and the second light-emitting element (LE2) of the first sub-pixel (SPX1) may be in contact with the first pixel electrode (PXE1). Similarly, the main body parts (CBD1, CBD2) of the first light-emitting element (LE1) and the second light-emitting element (LE2) of the second sub-pixel (SPX2) may be in contact with the second pixel electrode (PXE2), and the main body parts (CBD1, CBD2) of the first light-emitting element (LE1) and the second light-emitting element (LE2) of the third sub-pixel (SPX3) may be in contact with the third pixel electrode (PXE3). For example, depending on the thickness or volume of the bonding electrode (BDE) included in each of the light emitting elements (LE), the pressure applied during the bonding process, or the angle at which each of the light emitting elements (LE) is tilted, each of the light emitting elements (LE) may or may not be in contact with the pixel electrode. In one embodiment, the main bodies (CBD1, CBD2) of the first light emitting element (LE1) and the second light emitting element (LE2) may be brought into contact with the pixel electrode of the corresponding sub-pixel (SPX), thereby supporting the first light emitting element (LE1) and the second light emitting element (LE2) more stably.

[0279] Fig. 25 is a cross-sectional view showing an example of a cross-section of a display panel corresponding to line I4-I4' of Fig. 19. Fig. 25 shows an embodiment different from the previously described embodiments (e.g., the embodiment of Fig. 24) with respect to bonding electrodes (BDE) of light-emitting elements (LE).

[0280] Referring to FIG. 25, the bonding electrode (BDE) of at least one light-emitting element (LE) may be disposed over the entire surface of the lower surface of the main body (CBD). For example, the first bonding electrode (BDE1) of the first light-emitting element (LE1) may be disposed over the entire surface of the lower surface of the first main body (CBD1). Similarly, the second bonding electrode (BDE2) of the second light-emitting element (LE2) may be disposed over the entire surface of the lower surface of the second main body (CBD2), and the third bonding electrode (BDE3) of the third light-emitting element (LE3) may be disposed over the entire surface of the lower surface of the third main body (CBD3). For example, depending on the thickness or volume of the bonding electrode (BDE) included in each of the light-emitting elements (LE), the pressure or temperature applied during the bonding process, etc., the bonding electrode (BDE) of each of the light-emitting elements (LE) may melt and spread over the entire surface of the lower surface of the main body (CBD).

[0281] Fig. 26 is a layout diagram showing pixels of a display area according to one embodiment. Fig. 27 is a cross-sectional diagram showing an example of a cross-section of a display panel corresponding to line I6-I6' of Fig. 26. Figs. 26 and 27 show an embodiment of a display panel (100) in which sub-pixels (SPX1, SPX2, SPX3) of each pixel (PX) include light-emitting elements (LE) that emit light of different colors.

[0282] Referring to FIGS. 26 and 27, the first sub-pixel (SPX1), the second sub-pixel (SPX2), and the third sub-pixel (SPX3) may include light-emitting elements (LE) that emit light of a first color, light of a second color, and light of a third color, respectively. For example, the first light-emitting element (LE1) and the second light-emitting element (LE2) of the first sub-pixel (SPX1) may be first-color light-emitting elements (for example, red light-emitting elements) that emit light of a first color. The first light-emitting element (LE1) and the second light-emitting element (LE2) of the second sub-pixel (SPX2) may be second-color light-emitting elements (for example, green light-emitting elements) that emit light of a second color. The first light-emitting element (LE1) and the second light-emitting element (LE2) of the third sub-pixel (SPX3) may be third-color light-emitting elements (e.g., blue light-emitting elements) that emit light of a third color.

[0283] Accordingly, the pixel (PX) may not include the first light conversion layer (QDL1), the second light conversion layer (QDL2), and the light transmitting layer (TPL). For example, the fifth organic film (213), the color filters (CF1, CF2, CF3), and the sixth organic film (214) may be sequentially arranged on the first capping layer (CAP1) covering the common electrode (CE).

[0284] Meanwhile, although FIG. 27 illustrates a display panel (110) that does not include a light-blocking layer (BM) according to the embodiments described above, the display panel (110) may further include at least one of a light-blocking layer (BM) and a light-transmitting layer (TPL) even if the pixel (PX) does not include a first light conversion layer (QDL1) and a second light conversion layer (QDL2). For example, a third organic film (211) may be disposed on a side surface of the light-emitting elements (LE) according to the embodiment of FIG. 27, and a common electrode (CE) and a first capping layer (CAP1) may be disposed on the third organic film (211) as in the embodiment of FIG. 8. In addition, a light-blocking layer (BM), a second capping layer (CAP2), a light-transmitting layer (TPL), a third capping layer (CPA3), a fifth organic film (213), color filters (CF1, CF2, CF3), and a sixth organic film (214) may be sequentially disposed on the first capping layer (CAP1). In the display panel (110) including the light-emitting elements (LE) according to the embodiment of FIG. 27, each of the first light conversion layer (QDL1) and the second light conversion layer (QDL2) disposed in the first sub-pixel (SPX1) and the second sub-pixel (SPX2) in FIG. 8 may be formed of a light-transmitting layer (TPL) that does not include wavelength conversion particles (WCP1, WCP2).

[0285] Each sub-pixel (SPX) may include at least one light-emitting element (LE) arranged on each pixel electrode. In one embodiment, each sub-pixel (SPX) may include a plurality of light-emitting elements (LE) including a first light-emitting element (LE1) and a second light-emitting element (LE2).

[0286] In one embodiment, the light emitting elements (LE) of the sub-pixels (SPX1, SPX2, SPX3) may be arranged so as to face the center of the unit pixel area (UPA) in which the corresponding pixel (PX) is arranged. For example, the first sub-pixel (SPX1), the second sub-pixel (SPX2), and the third sub-pixel (SPX3) may be arranged sequentially along the first direction (DR1), and at least one of the light emitting elements (LE) of the first sub-pixel (SPX1) and the third sub-pixel (SPX3) may be bonded to the first pixel electrode (PXE1) or the third pixel electrode (PXE3) at an angle so as to face the center of the unit pixel area (UPA). The light emitting elements (LE) arranged in the second sub-pixel (SPX2) located at the center of the unit pixel area (UPA) may be bonded so as to face the upper portion of the pixel (PX).

[0287] For example, the first light-emitting element (LE1) and the second light-emitting element (LE2) of the first sub-pixel (SPX1) may be bonded to the first pixel electrode (PXE1) at an angle toward the center of the unit pixel area (UPA). In one embodiment, the bonding electrode (BDE) of each of the first light-emitting element (LE1) and the second light-emitting element (LE2) of the first sub-pixel (SPX1) may be arranged at an angle close to the outer portion (for example, the left portion) of the unit pixel area (UPA) on the lower surface of the main body (CBD).

[0288] Similarly, the first light-emitting element (LE1) and the second light-emitting element (LE2) of the third sub-pixel (SPX3) may be bonded to the third pixel electrode (PXE3) at an angle toward the center of the unit pixel area (UPA). In one embodiment, the bonding electrodes (BDE) of each of the first light-emitting element (LE1) and the second light-emitting element (LE2) of the third sub-pixel (SPX3) may be arranged at an angle close to the outer portion of the unit pixel area (UPA) on the lower surface of the main body (CBD) (for example, the right portion).

[0289] On the other hand, in the second sub-pixel (SPX2) located at the center of the unit pixel area (UPA) compared to the first sub-pixel (SPX1) and the third sub-pixel (SPX3), the first light-emitting element (LE1) and the second light-emitting element (LE2) may be substantially vertically bonded on the second pixel electrode (PXE2). For example, the light-emitting surfaces (for example, the upper surfaces of the first body portion (CBD1) and the second body portion (CBD2)) of the first light-emitting element (LE1) and the second light-emitting element (LE2) of the second sub-pixel (SPX2) may face the upper portion of the second sub-pixel (SPX2). In one embodiment, the bonding electrode (BDE) of each of the first light-emitting element (LE1) and the second light-emitting element (LE2) of the second sub-pixel (SPX2) may be disposed substantially centrally on the lower surface of the body portion (CBD).

[0290] As the light emitting elements (LE) of the sub-pixels (SPX) are arranged toward the center of the unit pixel area (UPA), the light emitted from the sub-pixels (SPX1, SPX2, SPX3) can be gathered more toward the center of the pixel (PX). This reduces optical interference that may occur between adjacent pixels (PX), and allows each pixel (PX) to more accurately express the desired gradation or color.

[0291] FIG. 28 is an exemplary drawing showing a smart watch including a display device according to one embodiment. Referring to FIG. 28, the display device (10_1) according to one embodiment can be applied to a smart watch (1000_1), which is one of smart devices.

[0292] FIGS. 29 and 30 are exemplary drawings showing a virtual reality device including a display device according to one embodiment.

[0293] Referring to FIGS. 29 and 30, a head-mounted display device (1000_2) according to one embodiment includes a first display device (10_2), a second display device (10_3), a display device storage unit (1100), a storage unit cover (1200), a first eyepiece lens (1210), a second eyepiece lens (1220), a head-mounted band (1300), a middle frame (1400), a first optical member (1510), a second optical member (1520), and a control circuit board (1600).

[0294] The first display device (10_2) provides an image to the user's left eye, and the second display device (10_3) provides an image to the user's right eye. Since each of the first display device (10_2) and the second display device (10_3) is substantially the same as the display device (10) described in conjunction with FIGS. 1 and 2, descriptions of the first display device (10_2) and the second display device (10_3) are omitted.

[0295] The first optical member (1510) may be positioned between the first display device (10_2) and the first eyepiece lens (1210). The second optical member (1520) may be positioned between the second display device (10_3) and the second eyepiece lens (1220). Each of the first optical member (1510) and the second optical member (1520) may include at least one convex lens.

[0296] The middle frame (1400) is disposed between the first display device (10_2) and the control circuit board (1600), and may be disposed between the second display device (10_3) and the control circuit board (1600). The middle frame (1400) serves to support and fix the first display device (10_2), the second display device (10_3), and the control circuit board (1600).

[0297] The control circuit board (1600) may be placed between the middle frame (1400) and the display device housing (1100). The control circuit board (1600) may be connected to the first display device (10_2) and the second display device (10_3) via connectors. The control circuit board (1600) may convert an image source input from the outside into digital video data (DATA) and transmit the digital video data (DATA) to the first display device (10_2) and the second display device (10_3) via the connectors.

[0298] The control circuit board (1600) can transmit digital video data (DATA) corresponding to a left-eye image optimized for the user's left eye to the first display device (10_2) and digital video data (DATA) corresponding to a right-eye image optimized for the user's right eye to the second display device (10_3). Alternatively, the control circuit board (1600) can transmit the same digital video data (DATA) to the first display device (10_2) and the second display device (10_3).

[0299] The display device storage unit (1100) serves to store the first display device (10_2), the second display device (10_3), the middle frame (1400), the first optical member (1510), the second optical member (1520), and the control circuit board (1600). The storage unit cover (1200) is arranged to cover an open surface of the display device storage unit (1100). The storage unit cover (1200) may include a first eyepiece (1210) for placing the user's left eye and a second eyepiece (1220) for placing the user's right eye. In FIGS. 29 and 30 , the first eyepiece (1210) and the second eyepiece (1220) are exemplified as being separately placed, but the embodiments of the present specification are not limited thereto. The first eyepiece (1210) and the second eyepiece (1220) may be combined into one.

[0300] The first eyepiece (1210) can be aligned with the first display device (10_2) and the first optical member (1510), and the second eyepiece (1220) can be aligned with the second display device (10_3) and the second optical member (1520). Accordingly, the user can view the image of the first display device (10_2) enlarged into a virtual image by the first optical member (1510) through the first eyepiece (1210), and can view the image of the second display device (10_3) enlarged into a virtual image by the second optical member (1520) through the second eyepiece (1220).

[0301] The head-mounted band (1300) serves to secure the display device storage unit (1100) to the user's head so that the first eyepiece (1210) and the second eyepiece (1220) of the storage unit cover (1200) can be positioned respectively for the user's left and right eyes. If the display device storage unit (1100) is implemented in a lightweight and compact form, the head-mounted display device (1000_2) may be equipped with a glasses frame as shown in FIG. 31 instead of the head-mounted band (1300).

[0302] In addition, the head-mounted display device (1000_2) may further include a battery for supplying power, an external memory slot for storing external memory, and an external connection port and wireless communication module for receiving a video source. The external connection port may be a USB (universe serial bus) terminal, a display port, or an HDMI (high-definition multimedia interface) terminal, and the wireless communication module may be a 5G communication module, a 4G communication module, a Wi-Fi module, or a Bluetooth module.

[0303] Fig. 31 is an exemplary drawing showing a virtual reality device including a display device according to another embodiment. Fig. 31 shows a virtual reality device (1000_3) to which a display device (10_4) according to one embodiment is applied.

[0304] Referring to FIG. 31, a virtual reality device (1000_3) according to one embodiment may be a device in the form of glasses. The virtual reality device (1000_3) according to one embodiment may include a display device (10_4), a left-eye lens (10a), a right-eye lens (10b), a support frame (20), eyeglass frame legs (30a, 30b), a reflective member (40), and a display device storage unit (50).

[0305] In Fig. 31, it is exemplified that the virtual reality device (1000_3) is a glasses-type display device including glasses frame legs (30a, 30b). That is, the virtual reality device (1000_3) according to one embodiment is not limited to that illustrated in Fig. 31, and can be applied in various forms in various other electronic devices.

[0306] The display device housing (50) may include a display device (10_4) and a reflective member (40). An image displayed on the display device (10_4) may be reflected by the reflective member (40) and provided to the user's right eye through the right eye lens (10b). As a result, the user may view a virtual reality image displayed on the display device (10_4) through the right eye.

[0307] In FIG. 31, the display device housing (50) is exemplified as being arranged at the right end of the support frame (20), but the embodiment of the present specification is not limited thereto. For example, the display device housing (50) may be arranged at the left end of the support frame (20), in which case the image displayed on the display device (10_4) may be reflected by the reflective member (40) and provided to the user's left eye through the left eye lens (10a). As a result, the user may view the virtual reality image displayed on the display device (10_4) through the left eye. Alternatively, the display device housing (50) may be arranged at both the left end and the right end of the support frame (20), in which case the user may view the virtual reality image displayed on the display device (10_4) through both the left eye and the right eye.

[0308] Fig. 32 is an exemplary drawing showing an automobile instrument panel and center fascia including display devices according to one embodiment. Fig. 32 shows an automobile to which display devices (10_a, 10_b, 10_c, 10_d, 10_e) according to one embodiment are applied.

[0309] Referring to FIG. 32, display devices (10_a, 10_b, 10_c) according to one embodiment may be applied to a dashboard of a vehicle, a center fascia of a vehicle, or a CID (Center Information Display) placed on a dashboard of a vehicle. In addition, display devices (10_d, 10_e) according to one embodiment may be applied to a room mirror display that replaces a side mirror of a vehicle.

[0310] FIG. 33 is an exemplary drawing showing a transparent display device including a display device according to one embodiment.

[0311] Referring to FIG. 33, a display device (10_5) according to one embodiment can be applied to a transparent display device. The transparent display device can display an image (IM) and transmit light at the same time. Therefore, a user positioned at the front of the transparent display device can view not only the image (IM) displayed on the display device (10_5), but also an object (RS) or background positioned at the back of the transparent display device. When the display device (10_5) is applied to a transparent display device, the substrate of the display device (10_5) can include a light-transmitting portion that can transmit light or can be formed of a material that can transmit light.

[0312] Although embodiments of the present invention have been described with reference to the attached drawings, those skilled in the art will appreciate that the present invention can be implemented in other specific forms without altering the technical spirit or essential characteristics of the present invention. Therefore, the embodiments described above should be understood to be illustrative in all respects and not restrictive.

Claims

1. Contains pixels including the first sub-pixel, The above first sub-pixel is, a first pixel electrode; and A first light-emitting element and a second light-emitting element are disposed on the first pixel electrode, each of which includes a main body portion including a first semiconductor layer, an active layer, and a second semiconductor layer, and a bonding electrode disposed on a lower surface of the main body portion, A display device, wherein at least one of the first light-emitting element and the second light-emitting element is arranged at an angle on the first pixel electrode.

2. In paragraph 1, A display device, wherein each of the first light-emitting element and the second light-emitting element includes a light-emitting surface corresponding to the upper surface of the main body.

3. In paragraph 2, A display device, wherein the light-emitting surfaces of the first light-emitting element and the second light-emitting element are inclined toward the center of the first sub-pixel.

4. In paragraph 3, A display device, wherein the bonding electrodes of each of the first light-emitting element and the second light-emitting element are arranged so as to be offset from a portion close to the outer edge of the first sub-pixel on the lower surface of the main body.

5. In paragraph 2, A light-shielding layer surrounding a light-emitting area in which the first light-emitting element and the second light-emitting element are arranged; and A display device further comprising a reflective film disposed on the above light-shielding layer.

6. In paragraph 5, A display device, wherein the light-emitting surfaces of the first light-emitting element and the second light-emitting element are inclined toward the outer edge of the first sub-pixel.

7. In paragraph 6, A display device, wherein the bonding electrodes of each of the first light-emitting element and the second light-emitting element are arranged so as to be offset from a portion close to the center of the first sub-pixel on the lower surface of the main body.

8. In paragraph 1, A display device, wherein at least one of the bonding electrodes of the first light-emitting element and the second light-emitting element has a thickness that gradually changes as it approaches the center or the periphery of the first sub-pixel.

9. In paragraph 1, A display device, wherein at least one of the main body parts of the first light-emitting element and the second light-emitting element is inclined with respect to the first pixel electrode and comes into contact with the first pixel electrode.

10. In paragraph 1, A display device, wherein the bonding electrodes of each of the first light-emitting element and the second light-emitting element are arranged over the entire lower surface of the main body.

11. In paragraph 1, A display device, wherein the first sub-pixel further includes a third light-emitting element disposed on the first pixel electrode and disposed between the first light-emitting element and the second light-emitting element.

12. In paragraph 11, The third light-emitting element is a display device including a main body including a first semiconductor layer, an active layer, and a second semiconductor layer, and a bonding electrode disposed on a lower surface of the main body, and is vertically disposed on the first pixel electrode.

13. In paragraph 12, The third light-emitting element includes a light-emitting surface corresponding to the upper surface of the main body, A display device, wherein the light-emitting surface of the third light-emitting element is arranged toward the upper portion of the first sub-pixel.

14. In paragraph 1, A display device, wherein the first sub-pixel further includes a first light conversion layer disposed on the first light-emitting element and the second light-emitting element.

15. In paragraph 14, A display device, wherein the first light conversion layer includes first wavelength conversion particles for converting light emitted from the first light-emitting element and the second light-emitting element into light of a different color.

16. In paragraph 14, A display device, wherein the upper surface of the first light conversion layer includes a curved surface in the shape of a lens.

17. In paragraph 1, A display device, wherein each of the first light-emitting element and the second light-emitting element further includes a first reflective film disposed between the main body and the bonding electrode.

18. In paragraph 17, A display device, wherein each of the first light-emitting element and the second light-emitting element further includes a second reflective film covering a side surface of the first semiconductor layer, the active layer, and the second semiconductor layer.

19. In paragraph 1, The above pixel is, a second sub-pixel including a second pixel electrode and at least one light-emitting element disposed on the second pixel electrode; and Further comprising a third sub-pixel including a third pixel electrode and at least one light-emitting element disposed on the third pixel electrode, A display device, wherein the first sub-pixel, the second sub-pixel, and the third sub-pixel are sequentially arranged along the first direction.

20. In paragraph 19, At least one of the first light-emitting element and the second light-emitting element of the first sub-pixel is arranged on the first pixel electrode at an angle toward the center of the unit pixel area where the pixel is arranged, A display device, wherein at least one light-emitting element of the third sub-pixel is arranged at an angle on the third pixel electrode so as to face the center of the unit pixel area.

Images