Display panel and display device

Abstract

Provided in the present application are a display panel and a display device. The display panel comprises a substrate, a light-emitting device layer, an organic encapsulation layer, and an inorganic thin-film layer. The light-emitting device layer is arranged on one side of the substrate. The organic encapsulation layer is arranged on the side of the light-emitting device layer facing away from the substrate. The inorganic thin-film layer is arranged on the side of the organic encapsulation layer facing away from the substrate, and comprises a first inorganic thin-film layer and a second inorganic thin-film layer with different contents of Si-H bonds.

Description

Display panel and display device Technical Field

[0001] The present application relates to the field of display technology, and in particular to a display panel and a display device. Background Art

[0002] With the development of organic light-emitting diode (OLED) displays, users have an increasing demand for flexible OLED displays. However, flexible OLED displays are prone to film breakage during bending, which is not conducive to improving the service life of flexible OLED displays.

[0003] Therefore, it is necessary to propose a technical solution to improve the problem that the flexible organic light emitting diode display is prone to film breakage during the bending process. SUMMARY OF THE INVENTION

[0004] The present application provides a display panel and a display device, which reduce the risk of fracture of an inorganic film layer in the display panel and the display device during a bending process.

[0005] In a first aspect, the present application provides a display panel, comprising a substrate, a light-emitting device layer, an organic encapsulation layer, and an inorganic thin film layer. The light-emitting device layer is disposed on one side of the substrate. The organic encapsulation layer is disposed on a side of the light-emitting device layer facing away from the substrate. The inorganic thin film layer is disposed on a side of the organic encapsulation layer facing away from the substrate and comprises a first inorganic thin film layer and a second inorganic thin film layer. The second inorganic thin film layer is located on a side of the first inorganic thin film layer facing away from the light-emitting device layer. Both the first and second inorganic thin film layers contain Si-H bonds, and the content of Si-H bonds in the first inorganic thin film layer is different from the content of Si-H bonds in the second inorganic thin film layer.

[0006] In a second aspect, the present application further provides a display panel comprising a substrate, a light-emitting device layer, an organic encapsulation layer, and an inorganic thin film layer. The light-emitting device layer is disposed on one side of the substrate. The organic encapsulation layer is disposed on a side of the light-emitting device layer facing away from the substrate. The inorganic thin film layer is disposed on a side of the organic encapsulation layer facing away from the light-emitting device layer, and comprises a first inorganic thin film layer and a second inorganic thin film layer, the second inorganic thin film layer being located on a side of the first inorganic thin film layer facing away from the light-emitting device layer, and the first inorganic thin film layer having an elastic modulus greater than the elastic modulus of the second inorganic thin film layer.

[0007] In a third aspect, the present application also provides a display device, which includes the above-mentioned display panel. Beneficial effects

[0008] In the display panels of some embodiments of the present application, the Si-H bond content in the first inorganic thin film layer differs from the Si-H bond content in the second inorganic thin film layer, which can result in a different elongation at break for the first inorganic thin film layer and the second inorganic thin film layer. If the elongation at break of the first inorganic thin film layer differs from the elongation at break of the second inorganic thin film layer, the fracture resistance of the first and second inorganic thin film layers can be adjusted as needed, reducing the risk of fracture in the inorganic thin film layer located above the organic encapsulation layer and extending the service life of the display panel and display device.

[0009] In the display panels of some embodiments of the present application, the elastic modulus of the first inorganic thin film layer is greater than that of the second inorganic thin film layer, which can result in a greater elongation at break of the second inorganic thin film layer than that of the first inorganic thin film layer. During bending of the display panel, the risk of the second inorganic thin film layer, which is farther from the light-emitting device layer, fracturing under stress is reduced, thereby reducing the risk of fracturing the inorganic thin film layer located above the light-emitting device layer, and extending the service life of the display panel and the display device. BRIEF DESCRIPTION OF THE DRAWINGS

[0010] FIG1 is a schematic cross-sectional view of a display panel according to some embodiments of the present application.

[0011] FIG2 is a schematic diagram of the cross-sectional structure of a light-emitting device layer according to some embodiments of the present application.

[0012] FIG3 is a schematic diagram of the cross-sectional structure of display panels according to some other embodiments of the present application.

[0013] FIG4 is a schematic cross-sectional view of display panels according to some other embodiments of the present application.

[0014] The reference numerals are as follows:

[0015] 100, display panel; 100a, bending area; 100b, non-bending area;

[0016] 11, substrate; 12, driving circuit layer;

[0017] 13, light-emitting device layer; 131, anode layer; 132, cathode layer; 133, light-emitting layer;

[0018] 14, inorganic thin film layer; 141, first inorganic thin film layer; 142, second inorganic thin film layer;

[0019] 15, thin film encapsulation layer; 151, first inorganic encapsulation layer; 1511, first inorganic encapsulation sublayer; 1512, second inorganic encapsulation sublayer; 152, organic encapsulation layer; 153, second inorganic encapsulation layer;

[0020] 16, touch layer; 161, touch insulation layer; 1611, first touch insulation layer; 1612, second touch insulation layer;

[0021] 17, covering layer; 18, light-transmitting protective layer. Modes for Carrying Out the Invention

[0022] The following will be combined with the drawings in the embodiments of the present application to clearly and completely describe the technical solutions in the embodiments of the present application. Obviously, the embodiments described are only part of the embodiments of the present application, not all of the embodiments. Based on the embodiments in the present application, all other embodiments obtained by those skilled in the art without making creative efforts are within the scope of protection of this application.

[0023] Please refer to FIG1 , which is a schematic cross-sectional view of a display panel according to some embodiments of the present application. The display panel 100 has a bending region 100 a and a non-bending region 100 b adjacent to the bending region 100 a. Thus, the display panel 100 is bendable.

[0024] The number of bending regions 100a can be one, two, or more. As shown in Figure 1, a bending region 100a can connect between two adjacent non-bending regions 100b. The bending region 100a can be a foldable region, or it can include a bending region that maintains a continuously curved shape. The foldable region can include at least one of an outer folding region and an inner folding region.

[0025] As shown in FIG1 , the display panel 100 includes a substrate 11, a light-emitting device layer 13, an organic encapsulation layer 152, and an inorganic thin film layer 14. The light-emitting device layer 13 is disposed on one side of the substrate 11. The organic encapsulation layer 152 is disposed on a side of the light-emitting device layer 13 facing away from the substrate 11. The inorganic thin film layer 14 is located on a side of the organic encapsulation layer 152 facing away from the substrate 11.

[0026] The substrate 11 includes a flexible substrate. Thus, the display panel 100 has flexibility. The flexible substrate includes an organic layer.

[0027] Please refer to Figure 2, which is a schematic diagram of the cross-sectional structure of the light-emitting device layer of some embodiments of the present application. The light-emitting device layer 13 includes an anode layer 131, a cathode layer 132 and a light-emitting layer 133. The anode layer 131 is arranged on one side of the substrate 11, and includes a plurality of anodes arranged at intervals. The light-emitting layer 133 is arranged on the side of the anode layer 131 away from the substrate 11, and includes a plurality of light-emitting layers respectively arranged on the plurality of anodes. The cathode layer 132 is arranged on the side of the light-emitting layer 133 away from the anode layer 131. An anode, a light-emitting layer located on the anode and the cathode layer 132 constitute a light-emitting device, and the light-emitting device may be an organic light-emitting diode, or a quantum dot light-emitting diode. Exemplarily, the light-emitting layer includes an organic light-emitting layer, in which case the light-emitting device is an organic light-emitting diode.

[0028] It is understandable that the light emitting device layer 13 may further include functional layers such as a hole injection layer, an electron transport layer, an electron blocking layer, and a hole transport layer.

[0029] When the light-emitting device layer 13 includes an organic light-emitting diode, the inorganic thin film layer 14 is formed after the light-emitting device layer 13, as it is located on the side of the light-emitting device layer 13 facing away from the substrate 11. Because organic light-emitting layers are not resistant to high temperatures, the inorganic thin film layer 14 is typically produced using a low-temperature process (e.g., below 100°C). Therefore, the production process for the inorganic thin film layer 14 differs from the high-temperature production processes used for conventional inorganic film layers.

[0030] The organic encapsulation layer 152 acts as a barrier against water and oxygen, improving the corrosion of the light-emitting device layer 13 by water and oxygen. The organic encapsulation layer 152 can be formed by inkjet printing. The organic encapsulation layer 152 comprises an organic material, including at least one of polyimide and polyacrylate. In some embodiments, the thickness of the organic encapsulation layer 152 is greater than or equal to 2 microns. This improves the water and oxygen barrier properties of the organic encapsulation layer 152.

[0031] The organic encapsulation layer 152 is typically located above the neutral layer. During the outward bending process of the display panel 100, the organic encapsulation layer 152 is relatively thick, causing the inorganic thin film layer 14 located above the organic encapsulation layer 152 to be farther away from the neutral layer, resulting in greater tensile stress on the inorganic thin film layer 14.

[0032] In some embodiments of the present application, in order to address the stress problem of the inorganic thin film layer 14, the elastic modulus and at least one of the components of at least two inorganic thin films in the inorganic thin film layer 14 located above the organic encapsulation layer 152 are adjusted to reduce the risk of the inorganic thin film layer 14 breaking under tensile stress or compressive stress, thereby extending the service life of the display panel.

[0033] As shown in FIG1 , the inorganic thin film layer 14 includes a first inorganic thin film layer 141 and a second inorganic thin film layer 142. The second inorganic thin film layer 142 is located on the side of the first inorganic thin film layer 141 facing away from the light-emitting device layer 13. In some embodiments, the first inorganic thin film layer 141 can be in direct contact with the second inorganic thin film layer 142. In other embodiments, other inorganic thin film layers, organic film layers, and conductive film layers can also be disposed between the first inorganic thin film layer 141 and the second inorganic thin film layer 142. It is understood that the inorganic thin film layer 14 can include three or more inorganic thin film layers.

[0034] In some embodiments, both the first inorganic thin film layer 141 and the second inorganic thin film layer 142 contain Si-H bonds, and the content of Si-H bonds in the first inorganic thin film layer 141 is different from the content of Si-H bonds in the second inorganic thin film layer 142. As a result, the first inorganic thin film layer 141 and the second inorganic thin film layer 142 have different elongation at break, and the fracture resistance of the first inorganic thin film layer 141 and the second inorganic thin film layer 142 can be differentiated as needed, thereby reducing the risk of fracture of the inorganic thin film layer 14 located above the organic encapsulation layer 152, and extending the service life of the display panel and the display device.

[0035] It should be noted that, in the present application, the content of Si-H bonds in an inorganic film layer is equal to the percentage of the ratio of the number of Si-H bonds to the number of all chemical bonds in the inorganic film layer. For example, for a silicon nitride layer, which generally contains NH bonds, Si-H bonds, Si-Si bonds, and Si-N bonds, the content of Si-H bonds in the silicon nitride layer is equal to the percentage of the ratio of the number of Si-H bonds to the sum of the number of NH bonds, Si-H bonds, Si-Si bonds, and Si-N bonds.

[0036] Furthermore, the differentiated design of the Si-H bond content in the first inorganic thin film layer 141 and the second inorganic thin film layer 142 can be achieved by controlling the composition of the raw materials used to prepare the first inorganic thin film layer 141 and the second inorganic thin film layer 142. For example, when the first inorganic thin film layer 141 and the second inorganic thin film layer 142 both include silicon nitride, the raw materials used to prepare the first inorganic thin film layer 141 and the second inorganic thin film layer 142 may include SiH4 gas and NH3 gas. By controlling the ratio of the volume of SiH4 gas to the volume of NH3 gas, the Si-H bond content in the first inorganic thin film layer 141 and the second inorganic thin film layer 142 can be controlled.

[0037] In addition, the testing method for the content of Si—H bonds in the inorganic film layer includes but is not limited to Fourier-transform infrared spectroscopy (FTIR).

[0038] In one specific embodiment, the Si-H bond content in the first inorganic thin film layer 141 is less than the Si-H bond content in the second inorganic thin film layer 142. Consequently, when the bending region 100a of the display panel 100 is bent, the elongation at break of the second inorganic thin film layer 142 is greater than the elongation at break of the first inorganic thin film layer 141. In the bent state of the display panel 100, because the second inorganic thin film layer 142 is further away from the neutral layer, the stress (tensile or compressive) experienced by the second inorganic thin film layer 142 is greater than the stress experienced by the first inorganic thin film layer 141. The greater elongation at break of the second inorganic thin film layer 142 than that of the first inorganic thin film layer 141 can reduce the risk of fracture of the second inorganic thin film layer 142, which is further away from the neutral layer, under the influence of greater tensile or compressive stress.

[0039] It should be noted that when the display panel 100 is in the outward folded state, the inorganic thin film layer 14 of the display panel 100 shown in FIG1 is located on the outside of the substrate 11, and the inorganic thin film layer 14 is subjected to tensile stress. When the display panel 100 is in the inward folded state, the substrate 11 of the display panel 100 shown in FIG1 is located on the outside of the inorganic thin film layer 14, and the inorganic thin film layer 14 is subjected to compressive stress. Regardless of whether the display panel 100 is in the outward folded state or the inward folded state, the second inorganic thin film layer 142 is farther from the neutral layer, and the stress on the second inorganic thin film layer 142 is greater than the stress on the first inorganic thin film layer 141. In some embodiments of the present application, increasing the elongation at break of the second inorganic thin film layer 142 is more conducive to reducing the risk of fracture of the inorganic thin film layer 14.

[0040] In some embodiments, when the Si-H bond content in the first inorganic thin film layer 141 is less than the Si-H bond content in the second inorganic thin film layer 142, the Si-H bond content in the first inorganic thin film layer 141 is greater than or equal to 35% and less than or equal to 45%, and the Si-H bond content in the second inorganic thin film layer 142 is greater than or equal to 45% and less than or equal to 55%. In this way, while ensuring that the first inorganic thin film layer 141 has a relatively low elongation at break, the first inorganic thin film layer 141 also has a good water and oxygen barrier capability, reducing the impact of water and oxygen on the light-emitting device layer 13. At the same time, while ensuring that the second inorganic thin film layer 142 has a relatively high elongation at break to reduce the risk of fracture of the second inorganic thin film layer 142, the second inorganic thin film layer 142 has a certain water and oxygen barrier capability, further reducing the impact of water and oxygen on the light-emitting device layer 13.

[0041] Optionally, the Si—H bond content in the first inorganic thin film layer 141 is greater than or equal to 38% and less than or equal to 42%, and the Si—H bond content in the second inorganic thin film layer 142 is greater than or equal to 48% and less than or equal to 52%.

[0042] In some embodiments, when the Si-H bond content in the first inorganic thin film layer 141 is less than the Si-H bond content in the second inorganic thin film layer 142, the elastic modulus of the first inorganic thin film layer 141 can be equal to the elastic modulus of the second inorganic thin film layer 142. Thus, even though the Si-H bond content in the first inorganic thin film layer 141 and the second inorganic thin film layer 142 is different, the elastic modulus of the two layers can also make the elongation at break of the second inorganic thin film layer 142 greater than the elongation at break of the first inorganic thin film layer 141, thereby reducing the risk of the second inorganic thin film layer 142 breaking under external force.

[0043] In other embodiments, when the Si-H bond content in the first inorganic thin film layer 141 is less than the Si-H bond content in the second inorganic thin film layer 142, the elastic modulus of the first inorganic thin film layer 141 can be greater than the elastic modulus of the second inorganic thin film layer 142. In this way, the elongation at break of the second inorganic thin film layer 142 is further greater than the elongation at break of the first inorganic thin film layer 141, thereby reducing the risk of the second inorganic thin film layer 142, which is farther from the neutral layer and is subject to greater stress in the display panel 100, breaking under stress during the bending process.

[0044] It should be noted that the differentiated design of the elastic modulus of the first inorganic thin film layer 141 and the second inorganic thin film layer 142 can be achieved by controlling the process parameters for forming the first inorganic thin film layer 141 and the second inorganic thin film layer 142, or by controlling the composition of the first inorganic thin film layer 141 and the second inorganic thin film layer 142. For example, when the materials used to prepare the first inorganic thin film layer 141 and the second inorganic thin film layer 142 include gas, the process parameters include, but are not limited to, gas pressure. Furthermore, the elastic modulus of the inorganic thin film layer 14 can be measured using nanoindentation, but is not limited thereto.

[0045] It should also be noted that the differentiated design of the elastic modulus of the first inorganic thin film layer 141 and the second inorganic thin film layer 142, as well as the differentiated design of the Si-H bond content of the first inorganic thin film layer 141 and the second inorganic thin film layer 142, can be used alone or in combination to make the breaking elongation of the first inorganic thin film layer 141 and the second inorganic thin film layer 142 different, thereby reducing the risk of the inorganic thin film layer 14 breaking under stress.

[0046] In some embodiments, when the elastic modulus of the first inorganic thin film layer 141 is greater than the elastic modulus of the second inorganic thin film layer 142, the elastic modulus of the first inorganic thin film layer 141 is greater than or equal to 90 GPa and less than or equal to 110 GPa, and the elastic modulus of the second inorganic thin film layer 142 is greater than or equal to 70 GPa and less than or equal to 90 GPa. In this way, while the first inorganic thin film layer 141 has a relatively low elongation at break, the first inorganic thin film layer 141 also has a good water and oxygen barrier capability, reducing the impact of water and oxygen on the light-emitting device layer 13. At the same time, while ensuring that the second inorganic thin film layer 142 has a relatively high elongation at break, the second inorganic thin film layer 142 has a certain water and oxygen barrier capability, further reducing the impact of water and oxygen on the light-emitting device layer 13.

[0047] Optionally, the elastic modulus of the first inorganic thin film layer 141 is greater than or equal to 95 GPa and less than or equal to 105 GPa, and the elastic modulus of the second inorganic thin film layer 142 is greater than or equal to 75 GPa and less than or equal to 85 GPa.

[0048] In some embodiments, the material of the first inorganic thin film layer 141 can be the same as that of the second inorganic thin film layer 142. In this way, the first inorganic thin film layer 141 and the second inorganic thin film layer 142 can be prepared using the same raw materials, simplifying the manufacturing processes of both.

[0049] In some embodiments, the first inorganic thin film layer 141 includes at least one of silicon oxynitride and silicon nitride. The second inorganic thin film layer 142 includes at least one of silicon oxynitride and silicon nitride. Thus, both the first inorganic thin film layer 141 and the second inorganic thin film layer 142 have good insulation and water and oxygen barrier properties, and the manufacturing process difficulty of the first inorganic thin film layer 141 and the second inorganic thin film layer 142 is reduced.

[0050] In a specific embodiment, the first inorganic thin film layer 141 and the second inorganic thin film layer 142 may both include silicon nitride, so that the first inorganic thin film layer 141 and the second inorganic thin film layer 142 have good insulation and barrier properties.

[0051] In another specific embodiment, the first inorganic thin film layer 141 and the second inorganic thin film layer 142 may both include silicon oxynitride. In this way, the refractive index of the first inorganic thin film layer 141 and the second inorganic thin film layer 142 can have a wider range of values, which is beneficial for improving the transmittance of light emitted by the light-emitting device layer 13 through the inorganic thin film layer 14.

[0052] In some embodiments, the thickness of the first inorganic thin film layer 141 and the second inorganic thin film layer 142 may be greater than or equal to 200 nanometers.

[0053] In some embodiments, as shown in FIG1 , the first inorganic thin film layer 141 includes a first inorganic encapsulation sublayer 1511, and the second inorganic thin film layer 142 includes a second inorganic encapsulation sublayer 1512. The first inorganic thin film layer 141 is located on and in contact with the organic encapsulation layer 152. The second inorganic encapsulation sublayer 1512 is located on and in contact with the first inorganic encapsulation sublayer 1511. The second inorganic encapsulation sublayer 1512 and the first inorganic encapsulation sublayer 1511 form the first inorganic encapsulation layer 151, which serves as a barrier to water and oxygen. In this way, in the first inorganic encapsulation layer 151, the first inorganic encapsulation sublayer 1511 that is closer to the light-emitting device layer 13 can have better water and oxygen barrier properties, and the second inorganic encapsulation sublayer 1512 that is farther away from the neutral layer has a larger elongation at break, so that the first inorganic encapsulation layer 151 has good water and oxygen barrier properties and anti-fracture performance, reducing the impact of water and oxygen on the light-emitting device layer 13, while improving the problem of film rupture in the thin film encapsulation layer of the display panel 100, resulting in a shortened service life.

[0054] In some embodiments, the thickness of the first inorganic encapsulation sublayer 1511 is greater than or equal to 200 nanometers and less than or equal to 500 nanometers, and the thickness of the second inorganic encapsulation sublayer 1512 is greater than or equal to 200 nanometers and less than or equal to 500 nanometers. In this way, the first and second inorganic encapsulation sublayers 1511, 1512 have good water and oxygen barrier properties, and the risk of the first and second inorganic encapsulation sublayers 1511, 1512 breaking during bending is low.

[0055] In some embodiments, the first inorganic encapsulation sublayer 1511 and the second inorganic encapsulation sublayer 1512 are made of the same material. This allows the first and second inorganic encapsulation sublayers 1511, 1512 to be made from the same raw materials, simplifying their manufacturing processes. In a specific embodiment, the first and second inorganic encapsulation sublayers 1511, 1512 include silicon nitride to ensure that the first and second inorganic encapsulation sublayers 1511, 1512 have good barrier properties.

[0056] It is understood that the first inorganic encapsulation layer 151 may also include three or more inorganic encapsulation sublayers. In the direction away from the organic encapsulation layer 152, the Si-H bond content of at least two inorganic encapsulation sublayers of the first inorganic encapsulation layer 151 increases and / or the elastic modulus decreases, so that the elongation at break of the multiple inorganic encapsulation sublayers of the first inorganic encapsulation layer 151 decreases, thereby improving the water and oxygen barrier performance and fracture resistance of the first inorganic encapsulation layer 151.

[0057] In related art, the first inorganic encapsulation layer is a single inorganic film layer, which has a high risk of fracture under tensile stress. However, in some embodiments of the present application, the first inorganic encapsulation layer 151, which is farther from the neutral layer, includes at least two inorganic thin film layers, and the elongation at break of at least two inorganic thin film layers is designed to be differentiated, thereby balancing the water and oxygen barrier properties and fracture resistance of the first inorganic encapsulation layer 151.

[0058] As shown in FIG1 , the display panel 100 further includes a second inorganic encapsulation layer 153. The second inorganic encapsulation layer 153 is located between the organic encapsulation layer 152 and the light-emitting device layer 13 and contacts the organic encapsulation layer 152. This further enhances the water and oxygen barrier capability of the thin film encapsulation layer 15.

[0059] It should be noted that the first inorganic encapsulation layer 151, the organic encapsulation layer 152 and the second inorganic encapsulation layer 153 constitute a thin film encapsulation layer 15, which has a good barrier effect on water and oxygen, and has a low risk of breakage due to external force during bending, thereby extending the service life of the display panel 100.

[0060] In some embodiments, the second inorganic encapsulation layer 153 contains Si-H bonds, the content of Si-H bonds in the second inorganic encapsulation layer 153 is greater than the content of Si-H bonds in the first inorganic encapsulation sublayer 1511 of the first inorganic encapsulation layer 151, and the elastic modulus of the second inorganic encapsulation layer 153 is less than the elastic modulus of the first inorganic encapsulation sublayer 1511 of the first inorganic encapsulation layer 151. As such, the elongation at break of the second inorganic encapsulation layer 153 is greater than the elongation at break of the first inorganic encapsulation sublayer 1511 of the first inorganic encapsulation layer 151. If the surface of the light-emitting device layer 13 facing the second inorganic encapsulation layer 153 is uneven, the elongation at break of the second inorganic encapsulation layer 153 is greater, thereby reducing the risk of the second inorganic encapsulation layer 153 breaking during the bending process of the display panel 100.

[0061] In some embodiments, the second inorganic encapsulation layer 153 may include silicon nitride, so as to ensure that the second inorganic encapsulation layer 153 has better water and oxygen barrier properties, further reducing the impact of water and oxygen on the light-emitting device layer 13 .

[0062] In other embodiments, the second inorganic encapsulation layer 153 may include silicon oxynitride, so as to ensure that the refractive index of the second inorganic encapsulation layer 153 has a wider range of values, which is beneficial to improving the transmittance of light emitted by the light-emitting device layer 13 passing through the second inorganic encapsulation layer 153 .

[0063] In some other embodiments, the second inorganic encapsulation layer 153 may include a combination of silicon nitride and silicon oxynitride. In this way, while improving the water and oxygen barrier performance of the second inorganic encapsulation layer 153, the refractive index of the second inorganic encapsulation layer 153 can have a larger range of values, which is conducive to improving the transmittance of light emitted by the light-emitting device layer 13 through the second inorganic encapsulation layer 153. In a specific embodiment, the second inorganic encapsulation layer 153 includes a silicon nitride layer, a first silicon oxynitride layer, and a second silicon oxynitride layer stacked in sequence, with the silicon nitride layer being disposed near the light-emitting device layer 13, and the second silicon oxynitride layer being in contact with the organic encapsulation layer 152.

[0064] In some embodiments, as shown in FIG1 , the display panel may further include a cover layer 17, which is disposed between the thin film encapsulation layer 15 and the cathode layer 132 and in contact with the cathode layer 132. Specifically, the cover layer 17 is disposed between the second inorganic encapsulation layer 153 and the cathode layer 132 and in contact with the cathode layer 132. The refractive index of the cover layer 17 is greater than that of the cathode layer 132. This improves the transmittance of light emitted by the light-emitting device layer 13 through the cover layer 17, thereby increasing the brightness of the display of the display panel 100 and reducing the display power consumption of the display panel 100.

[0065] In some embodiments, the material of the cover layer 17 may include at least one of an organic material and an inorganic material. In a specific embodiment, the material of the cover layer 17 may include at least one of a conjugated structure of benzoxazole and an aromatic compound containing fluorine or trifluoromethyl.

[0066] In some embodiments, as shown in FIG1 , the display panel 100 may further include a light-transmitting protective layer 18 . The light-transmitting protective layer 18 is disposed between the cover layer 17 and the thin-film encapsulation layer 15 and is in contact with the cover layer 17 and the second inorganic encapsulation layer 153 of the thin-film encapsulation layer 15 . Thus, during the formation of the thin-film encapsulation layer 15 , the light-transmitting protective layer 18 protects the cover layer 17 . In some embodiments, the material of the light-transmitting protective layer 18 may be an inorganic material, which may include an alkali metal element and a halogen element. In a specific embodiment, the material of the light-transmitting protective layer 18 may include lithium fluoride.

[0067] In some embodiments, as shown in FIG1 , the light-emitting device layer 13 further includes a driving circuit layer 12, which is disposed between the light-emitting device layer 13 and the substrate 11. The driving circuit layer 12 includes a driving circuit connected to the light-emitting devices in the light-emitting device layer 13. The driving circuit includes a thin film transistor.

[0068] Please refer to FIG3 , which is a schematic cross-sectional view of display panels according to yet other embodiments of the present application. The display panel 100 shown in FIG3 is substantially similar to the display panel 100 shown in FIG1 , and similarities are not repeated here. The differences include: the first inorganic thin film layer 141 includes a first touch insulating layer 1611, and the second inorganic thin film layer 142 includes a second touch insulating layer 1612. The first touch insulating layer 1611 is located on and in contact with the first inorganic encapsulation layer 151. The second touch insulating layer 1612 is located on the side of the first touch insulating layer 1611 facing away from the thin film encapsulation layer 15 and in contact with the first touch insulating layer 1611. As a result, the elongation at break of the second touch insulating layer 1612 is greater than that of the first touch insulating layer 1611. The risk of the second touch insulating layer 1612 fracturing under stress is reduced, as it is further from the neutral layer. This improves the fracture resistance of the touch insulating layer located on the thin film encapsulation layer 15.

[0069] The thickness of the first touch insulating layer 1611 and the second touch insulating layer 1612 is greater than or equal to 200 nanometers, thereby improving the insulation properties of the first touch insulating layer 1611 and the second touch insulating layer 1612 .

[0070] The first touch insulating layer 1611 and the second touch insulating layer 1612 may include silicon nitride, so as to improve the insulation properties and the ability to block water and oxygen of the first touch insulating layer 1611 and the second touch insulating layer 1612 .

[0071] The display panel 100 also includes a touch metal layer (not shown), which is disposed between the first touch insulating layer 1611 and the second touch insulating layer 1612. The touch metal layer can include mutual-capacitive touch electrodes or self-capacitive touch electrodes. The touch metal layer, the first touch insulating layer 1611, and the second touch insulating layer 1612 constitute the touch layer 16.

[0072] Furthermore, the thin film encapsulation layer 15 in FIG3 is substantially similar to the thin film encapsulation layer 15 in FIG1 , except that the first inorganic encapsulation layer 151 can be a single layer and comprise silicon nitride, and the thickness of the first inorganic encapsulation layer 151 is greater than or equal to 400 nanometers. The second inorganic encapsulation layer 153 also differs from the first touch insulating layer 1611 in that it contains Si-H bonds, the content of Si-H bonds in the second inorganic encapsulation layer 153 can be greater than the content of Si-H bonds in the first touch insulating layer 1611, and the elastic modulus of the second inorganic encapsulation layer 153 is less than that of the first touch insulating layer 1611.

[0073] In some other embodiments of the present application, the first inorganic thin film layer 141 includes a first touch insulation layer 1611, and the second inorganic thin film layer 142 includes a second touch insulation layer 1612, which improves the elongation at break of the second touch insulation layer 1612, reduces the risk of the second touch insulation layer 1612 breaking, and reduces the risk of the touch insulation layer 161 of the touch layer 16 breaking during the bending process.

[0074] Please refer to FIG4 , which is a schematic diagram of the cross-sectional structure of display panels according to yet other embodiments of the present application. The display panel 100 shown in FIG4 is substantially similar to the display panel 100 shown in FIG1 , and similarities are not repeated here. The differences include that the first inorganic thin film layer 141 includes a first inorganic encapsulation layer 151, and the second inorganic thin film layer 142 includes a touch insulating layer 161. The first inorganic encapsulation layer 151 is located on and in contact with the organic encapsulation layer 152. The touch insulating layer 161 is located on and in contact with the first inorganic encapsulation layer 151. As such, the first inorganic encapsulation layer 151 has a relatively low elongation at break and has excellent water and oxygen barrier properties, thereby improving the problem of water and oxygen corroding the light-emitting device layer 13. The touch insulating layer 161 has a relatively high elongation at break, which reduces the risk of the touch insulating layer 161 breaking during bending, thereby reducing the risk of the touch insulating layer 161 breaking further away from the neutral layer.

[0075] In some other embodiments, as shown in FIG4 , the touch insulation layer 161 includes a first touch insulation layer 1611 and a second touch insulation layer 1612. The second touch insulation layer 1612 is located on a side of the first touch insulation layer 1611 facing away from the thin film encapsulation layer 15. The first touch insulation layer 1611 is located on and in contact with the first inorganic encapsulation layer 151. The second touch insulation layer 1612 is located on and in contact with the first touch insulation layer 1611. The elastic modulus of the second touch insulation layer 1612 is smaller than that of the first touch insulation layer 1611, and the elastic modulus of the first touch insulation layer 1611 is smaller than that of the first inorganic encapsulation layer 151. The second touch insulation layer 1612 contains a greater Si-H bond content than the first touch insulation layer 1611, and the first touch insulation layer 1611 contains a greater Si-H bond content than the first inorganic encapsulation layer 151. Therefore, the elastic modulus of the first inorganic encapsulation layer 151, the first touch insulation layer 1611, and the second touch insulation layer 1612 decreases, while the Si-H content of the first inorganic encapsulation layer 151, the first touch insulation layer 1611, and the second touch insulation layer 1612 increases, resulting in an increase in the elongation at break of the first inorganic encapsulation layer 151, the first touch insulation layer 1611, and the second touch insulation layer 1612. As a result, the first inorganic encapsulation layer 151 has a lower elongation at break and good water and oxygen barrier properties, while the first touch insulation layer 1611 and the second touch insulation layer 1612 have stronger fracture resistance.

[0076] In some other embodiments, the first inorganic encapsulation layer 151 may also include a first inorganic encapsulation sublayer 1511 and a second inorganic encapsulation sublayer 1512. The first inorganic encapsulation sublayer 1511 is in contact with the organic encapsulation layer 152. The second inorganic encapsulation sublayer 1512 is located on a side of the first inorganic encapsulation sublayer 1511 facing away from the light-emitting device layer 13, and is in contact with the first inorganic encapsulation sublayer 1511 and the first touch insulating layer 1611. The elastic modulus of the first inorganic encapsulation sublayer 1511, the second inorganic encapsulation sublayer 1512, the first touch insulation layer 1611, and the second touch insulation layer 1612 decreases, and the Si—H content in the first inorganic encapsulation sublayer 1511, the second inorganic encapsulation sublayer 1512, the first touch insulation layer 1611, and the second touch insulation layer 1612 increases, resulting in an increase in the elongation at break of the first inorganic encapsulation sublayer 1511, the second inorganic encapsulation sublayer 1512, the first touch insulation layer 1611, and the second touch insulation layer 1612. As a result, the first inorganic encapsulation layer 151 has a low elongation at break and good water and oxygen barrier properties, and the touch insulation layer 161 has stronger fracture resistance.

[0077] In some other embodiments, the inorganic thin film layer 14 includes a first inorganic encapsulation layer 151 and a touch insulating layer 161 . The first inorganic encapsulation layer 151 has both good barrier properties and anti-fracture properties, while the touch insulating layer 161 also has good anti-fracture properties.

[0078] Based on the same inventive concept, the present application also provides a display device, which includes the above-mentioned display panel.

[0079] The description of the above embodiments is only used to help understand the technical solutions and core ideas of this application; ordinary technicians in this field should understand that they can still modify the technical solutions recorded in the aforementioned embodiments, or make equivalent replacements for some of the technical features therein; and these modifications or replacements do not cause the essence of the corresponding technical solutions to deviate from the scope of the technical solutions of the embodiments of this application.

Claims

1. A display panel, wherein: include: substrate; a light-emitting device layer, disposed on one side of the substrate; an organic encapsulation layer, disposed on a side of the light-emitting device layer facing away from the substrate; as well as An inorganic thin film layer is arranged on the side of the organic encapsulation layer away from the substrate, and includes a first inorganic thin film layer and a second inorganic thin film layer, the second inorganic thin film layer is located on the side of the first inorganic thin film layer away from the light-emitting device layer, the first inorganic thin film layer and the second inorganic thin film layer both contain Si-H bonds, and the content of Si-H bonds in the first inorganic thin film layer is different from the content of Si-H bonds in the second inorganic thin film layer.

2. The display panel according to claim 1, wherein The content of Si—H bonds in the first inorganic thin film layer is less than the content of Si—H bonds in the second inorganic thin film layer.

3. The display panel according to claim 2, wherein: The content of Si-H bonds in the first inorganic thin film layer is greater than or equal to 35% and less than or equal to 45%, and the content of Si-H bonds in the second inorganic thin film layer is greater than or equal to 45% and less than or equal to 55%.

4. The display panel according to claim 2, wherein: The elastic modulus of the first inorganic thin film layer is greater than or equal to the elastic modulus of the second inorganic thin film layer.

5. The display panel according to claim 4, wherein: The elastic modulus of the first inorganic thin film layer is greater than or equal to 90 GPa and less than or equal to 110 GPa, and the elastic modulus of the second inorganic thin film layer is greater than or equal to 70 GPa and less than or equal to 90 GPa. The display panel according to claim 2 , wherein: The first inorganic thin film layer includes a first inorganic encapsulation sublayer, the second inorganic thin film layer includes a second inorganic encapsulation sublayer, the first inorganic encapsulation sublayer is located on the organic encapsulation layer and contacts the organic encapsulation layer, and the second inorganic encapsulation sublayer is located on the first inorganic encapsulation sublayer and contacts the first inorganic encapsulation sublayer.

7. The display panel according to claim 2, wherein: The first inorganic thin film layer includes a first inorganic encapsulation layer, the second inorganic thin film layer includes a touch insulation layer, the first inorganic encapsulation layer is located on the organic encapsulation layer and contacts the organic encapsulation layer, and the touch insulation layer is located on the first inorganic encapsulation layer and contacts the first inorganic encapsulation layer.

8. The display panel according to claim 7, wherein: The touch insulation layer includes a first touch insulation layer and a second touch insulation layer, the first touch insulation layer is located on the first inorganic encapsulation layer and in contact with the first inorganic encapsulation layer, and the second touch insulation layer is located on a side of the first touch insulation layer away from the organic encapsulation layer; The content of Si-H bonds in the second touch insulating layer is greater than that in the first touch insulating layer, and the content of Si-H bonds in the first touch insulating layer is greater than that in the first inorganic encapsulation layer.

9. The display panel according to claim 1, wherein: The display panel further includes: a second inorganic encapsulation layer, located between the organic encapsulation layer and the light-emitting device layer and in contact with the organic encapsulation layer; the second inorganic encapsulation layer contains Si-H bonds; the content of Si-H bonds in the second inorganic encapsulation layer is greater than the content of Si-H bonds in the first inorganic thin film layer; and the elastic modulus of the second inorganic encapsulation layer is less than the elastic modulus of the first inorganic thin film layer.

10. The display panel according to claim 1, wherein The light emitting device layer includes: an anode layer, disposed on one side of the substrate; a light-emitting layer, disposed on a side of the anode layer facing away from the substrate; and a cathode layer, disposed on a side of the light-emitting layer away from the anode layer; The display panel further includes: a covering layer disposed between the organic encapsulation layer and the cathode layer and in contact with the cathode layer; and The light-transmitting protective layer is disposed between the cover layer and the organic encapsulation layer and contacts the cover layer.

11. The display panel according to claim 1, wherein: The first inorganic thin film layer includes at least one of silicon oxynitride and silicon nitride, and the second inorganic thin film layer includes at least one of silicon oxynitride and silicon nitride.

12. A display panel, wherein: include: substrate; a light-emitting device layer, disposed on one side of the substrate; an organic encapsulation layer, disposed on a side of the light-emitting device layer facing away from the substrate; as well as The inorganic thin film layer is arranged on the side of the organic encapsulation layer away from the light-emitting device layer, and includes a first inorganic thin film layer and a second inorganic thin film layer, the second inorganic thin film layer is located on the side of the first inorganic thin film layer away from the light-emitting device layer, and the elastic modulus of the first inorganic thin film layer is greater than the elastic modulus of the second inorganic thin film layer.

13. The display panel according to claim 12, wherein: The first inorganic thin film layer and the second inorganic thin film layer both contain Si—H bonds, and the content of Si—H bonds in the first inorganic thin film layer is less than the content of Si—H bonds in the second inorganic thin film layer.

14. The display panel according to claim 12, wherein: The first inorganic thin film layer includes a first inorganic encapsulation sublayer, the second inorganic thin film layer includes a second inorganic encapsulation sublayer, the first inorganic encapsulation sublayer is located on the organic encapsulation layer and contacts the organic encapsulation layer, and the second inorganic encapsulation sublayer is located on the first inorganic encapsulation sublayer and contacts the first inorganic encapsulation sublayer.

15. The display panel according to claim 12, wherein: The first inorganic thin film layer includes a first inorganic encapsulation layer, the second inorganic thin film layer includes a touch insulation layer, the first inorganic encapsulation layer is located on the organic encapsulation layer and contacts the organic encapsulation layer, and the touch insulation layer is located on the first inorganic encapsulation layer and contacts the first inorganic encapsulation layer.

16. The display panel according to claim 12, wherein: The display panel further includes a second inorganic encapsulation layer located between the organic encapsulation layer and the light-emitting device layer and in contact with the organic encapsulation layer, wherein the elastic modulus of the second inorganic encapsulation layer is smaller than the elastic modulus of the first inorganic thin film layer.

17. The display panel according to claim 12, wherein: The light emitting device layer includes: an anode layer, disposed on one side of the substrate; a light-emitting layer, disposed on a side of the anode layer facing away from the substrate; and a cathode layer, disposed on a side of the light-emitting layer away from the anode layer; The display panel further includes: a covering layer disposed between the organic encapsulation layer and the cathode layer and in contact with the cathode layer; and The light-transmitting protective layer is disposed between the cover layer and the thin-film encapsulation layer and contacts the cover layer.

18. A display device, wherein: The display device includes a display panel, and the display panel includes: substrate; a light-emitting device layer, disposed on one side of the substrate; an organic encapsulation layer, disposed on a side of the light-emitting device layer facing away from the substrate; and An inorganic thin film layer is arranged on the side of the organic encapsulation layer away from the substrate, and includes a first inorganic thin film layer and a second inorganic thin film layer, the second inorganic thin film layer is located on the side of the first inorganic thin film layer away from the light-emitting device layer, the first inorganic thin film layer and the second inorganic thin film layer both contain Si-H bonds, and the content of Si-H bonds in the first inorganic thin film layer is different from the content of Si-H bonds in the second inorganic thin film layer.

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