Quantum dot light-emitting device and manufacturing method therefor, and display device

Abstract

Embodiments of the present application provide a quantum dot light-emitting device and a manufacturing method therefor, and a display device. The quantum dot light-emitting device comprises a device support, a light-emitting chip, an encapsulation adhesive layer, a first molecular deposition layer and a quantum dot layer; a mounting cavity is formed on the device support; the light-emitting chip is arranged at the bottom of the mounting cavity; the encapsulation adhesive layer, the first molecular deposition layer and the quantum dot layer are sequentially stacked in and fills the mounting cavity; the encapsulation adhesive layer covers the surface of the light-emitting chip.

Description

Quantum dot light-emitting device, manufacturing method thereof, and display device

[0001] This application claims priority to the Chinese patent application filed with the State Intellectual Property Office of China on April 2, 2024, with application number 202410396135.8 and invention name “Quantum dot light-emitting device, its manufacturing method, and display device”, the entire contents of which are incorporated by reference in this disclosure. Technical Field

[0002] The present disclosure relates to the field of optoelectronic technology, and in particular to a quantum dot light-emitting device, a manufacturing method thereof, and a display device. Background Art

[0003] With the development of quantum dot display technology, the application of quantum dot light-emitting devices is becoming increasingly widespread. Technical issues

[0004] In related technologies, quantum dot light-emitting devices have poor sealing performance, and water vapor and oxygen in the environment can easily invade the quantum dot layer, reducing the stability of the quantum dot layer and the performance of the quantum dots therein, resulting in the luminous efficiency and service life of the quantum dot light-emitting device falling short of expectations. Technical Solutions

[0005] The embodiments of the present disclosure provide a quantum dot light-emitting device, a method for manufacturing the same, and a display device, which can effectively protect quantum dots from the intrusion of water and oxygen, thereby improving the luminous efficiency and service life of the quantum dot light-emitting device.

[0006] In a first aspect, an embodiment of the present application provides a quantum dot light-emitting device, comprising a device bracket, a light-emitting chip, an encapsulation adhesive layer, a first molecular deposition layer and a quantum dot layer, wherein the device bracket is provided with a mounting cavity, the light-emitting chip is arranged at the bottom of the mounting cavity, the encapsulation adhesive layer, the first molecular deposition layer and the quantum dot layer are sequentially stacked and filled in the mounting cavity, and the encapsulation adhesive layer covers the surface of the light-emitting chip.

[0007] In some embodiments, the device bracket has a top side and a bottom side that are relatively arranged, and the open end of the mounting cavity is located on the top side of the device bracket; the quantum dot light-emitting device also includes a packaging lens, which is arranged on the top side of the device bracket and covers the open end of the mounting cavity.

[0008] In some embodiments, the quantum dot light-emitting device further includes a second molecular deposition layer, which covers a surface on one side of the packaging lens away from the device support and an area surrounding the packaging lens on the top side of the device support; the second molecular deposition layer is an inorganic molecular deposition layer.

[0009] In some embodiments, the device support further includes a peripheral side surface connecting the top side and the bottom side, and the second molecular deposition layer further covers the peripheral side surface of the device support.

[0010] In some embodiments, a surface of the quantum dot layer away from the first molecular deposition layer is flush with an opening end of the mounting cavity.

[0011] In some embodiments, the quantum dot light-emitting device further includes a third molecular deposition layer, which covers a surface of the quantum dot layer on a side away from the first molecular deposition layer; the third molecular deposition layer is an inorganic molecular deposition layer.

[0012] In some embodiments, the mounting cavity gradually shrinks from its open end to its bottom, and the encapsulation glue layer, the first molecular deposition layer, and the quantum dot layer are respectively adhered to and connected to the inner wall of the mounting cavity.

[0013] In some embodiments, the thickness of the first molecular deposition layer is 50-100 microns.

[0014] In some embodiments, the first molecular deposition layer is an inorganic molecular deposition layer.

[0015] In a second aspect, an embodiment of the present disclosure provides a method for manufacturing a quantum dot light-emitting device, comprising: setting a light-emitting chip at the bottom of a mounting cavity of a device bracket; sequentially forming an encapsulation adhesive layer, a first molecular deposition layer and a quantum dot layer in the mounting cavity where the light-emitting chip is set, and the encapsulation adhesive layer covers the surface of the light-emitting chip.

[0016] In some embodiments, after forming a packaging glue layer, a first molecular deposition layer and a quantum dot layer in sequence in a mounting cavity where a light-emitting chip is provided, the manufacturing method further includes: providing a packaging lens on the top side of the device bracket, the opening end of the mounting cavity is located on the top side of the device bracket, and the packaging lens covers the opening end of the mounting cavity; and forming a second molecular deposition layer on a side surface of the packaging lens away from the device bracket and on an area surrounding the packaging lens on the top side of the device bracket.

[0017] In a third aspect, an embodiment of the present disclosure provides a display device comprising the quantum dot light-emitting device provided by any of the above embodiments. Beneficial effects

[0018] In the embodiment of the present disclosure, a dense first molecular deposition layer is provided on the surface of the encapsulation layer away from the light-emitting chip. The inorganic molecules in the first molecular deposition layer can fill all or at least most of the pores on the surface of the encapsulation layer on this side, so that all or at least most of the paths for water and oxygen to invade the quantum dot layer through the pores on the surface of the encapsulation layer on this side are blocked. The first molecular deposition layer then forms a dense barrier between the quantum dot layer and the encapsulation layer, so that the very little water and oxygen that accidentally invade are blocked by the first molecular deposition layer. In this way, when water and oxygen gradually invade along the fitting gap at the bottom of the mounting cavity and the pores on the bottom side of the encapsulation layer, the first molecular deposition layer can effectively block the water and oxygen from the bottom side of the device bracket, thereby protecting the quantum dots from the influence of water and oxygen invasion and improving the luminous efficiency and service life of the quantum dot light-emitting device. BRIEF DESCRIPTION OF THE DRAWINGS

[0019] In order to more clearly illustrate the technical solutions in the embodiments of the present disclosure, the following briefly introduces the drawings required for use in the description of the embodiments. Obviously, the drawings described below are only some embodiments of the present disclosure. For those skilled in the art, other drawings can be obtained based on these drawings without creative work.

[0020] FIG1 is a cross-sectional structural diagram of a quantum dot light-emitting device provided in some embodiments of the present disclosure;

[0021] FIG2 is another cross-sectional structural diagram of a quantum dot light-emitting device provided in some embodiments of the present disclosure;

[0022] FIG3 is another cross-sectional structural diagram of a quantum dot light-emitting device provided in some embodiments of the present disclosure;

[0023] FIG4 is a flowchart of a method for manufacturing a quantum dot light-emitting device according to some embodiments of the present disclosure;

[0024] FIG5 is another production flow chart of a method for producing a quantum dot light-emitting device according to some embodiments of the present disclosure.

[0025] Explanation of the main component symbols: 10-device bracket, 11-mounting cavity, 10a-top side, 10b-bottom side, 20-light-emitting chip, 30-packaging glue layer, 40-first molecular deposition layer, 50-quantum dot layer, 51-first quantum dot sub-layer, 52-second quantum dot sub-layer, 60-packaging lens, 70-second molecular deposition layer, 80-third molecular deposition layer. Modes for Carrying Out the Invention

[0026] The following will be combined with the accompanying drawings in the embodiments of the present disclosure to clearly and completely describe the technical solutions in the embodiments of the present disclosure. Obviously, the embodiments described are only part of the embodiments of the present disclosure, not all of the embodiments. Based on the embodiments of the present disclosure, all other embodiments obtained by those skilled in the art without making any creative efforts shall fall within the scope of protection of the present disclosure.

[0027] In the description of the present disclosure, it should be understood that the terms "center", "longitudinal", "lateral", "length", "width", "thickness", "up", "down", "front", "back", "left", "right", "vertical", "horizontal", "top", "bottom", "inside", "outside" and the like indicate orientations or positional relationships based on the orientations or positional relationships shown in the accompanying drawings, and are only for the convenience of describing the present disclosure and simplifying the description, rather than indicating or implying that the device or element referred to must have a specific orientation, be constructed and operated in a specific orientation, and therefore cannot be understood as limiting the present disclosure. In addition, the terms "first" and "second" are used for descriptive purposes only, and cannot be understood as indicating or implying relative importance or implicitly indicating the number of the indicated technical features. Therefore, the features defined as "first" and "second" may explicitly or implicitly include one or more of the said features. In the description of the present disclosure, "multiple" means two or more, unless otherwise clearly and specifically defined.

[0028] “A and / or B” includes the following three combinations: A only, B only, and a combination of A and B.

[0029] The use of "suitable for" or "configured to" in this disclosure is intended to be open and inclusive language, and does not exclude devices that are adapted or configured to perform additional tasks or steps. In addition, the use of "based on" is intended to be open and inclusive, as a process, step, calculation, or other action that is "based on" one or more stated conditions or values ​​may, in practice, be based on additional conditions or values ​​beyond those stated.

[0030] In this disclosure, the word "exemplary" is used to mean "serving as an example, illustration, or illustration." Any embodiment described in this disclosure as "exemplary" is not necessarily to be construed as preferred or advantageous over other embodiments. The following description is given to enable any person skilled in the art to implement and use the present disclosure. In the following description, details are listed for the purpose of explanation. It should be understood that one of ordinary skill in the art will recognize that the present disclosure can be implemented without these specific details. In other instances, well-known structures and processes are not elaborated in detail to avoid obscuring the description of the present disclosure with unnecessary details. Therefore, the present disclosure is not intended to be limited to the embodiments shown, but is to be consistent with the widest scope consistent with the principles and features disclosed herein.

[0031] As shown in Figure 1, in the first aspect, the embodiment of the present disclosure provides a quantum dot light-emitting device, which includes a device bracket 10, a light-emitting chip 20, an encapsulation glue layer 30, a first molecular deposition layer 40 and a quantum dot layer 50, which can effectively protect the quantum dots from the invasion of water and oxygen, and improve the luminous efficiency and service life of the quantum dot light-emitting device.

[0032] The device holder 10 is provided with a mounting cavity 11, with the two ends of the mounting cavity 11 forming an open end and a bottom, respectively, and the open end is opened on the surface of the device holder 10. The bottom of the mounting cavity 11 can be provided with a conductive connection portion, and the side wall of the device holder 10 can be provided with a via hole, with the two ends of the via hole opening at the bottom of the mounting cavity 11 and the outer surface of the device holder 10, respectively; the conductive connection portion passes through the side wall of the device holder 10 along the via hole and extends to the outer surface of the device holder 10, so that the quantum dot light-emitting device can be set on an external board such as a rigid printed circuit board or a flexible circuit board, and then conductively connected to the conductive circuit on the external board. Due to the limitations of the manufacturing process, there is usually a fitting gap between the conductive connection portion and the via hole, and moisture and oxidation in the environment can gradually invade the mounting cavity 11 through the fitting gap at the bottom of the mounting cavity 11.

[0033] The light-emitting chip 20 is disposed at the bottom of the mounting cavity 11 and forms a conductive connection with the conductive connection portion located at the bottom of the mounting cavity 11. The size and type of the light-emitting chip 20 can be determined according to actual needs, and can be, for example, MiniLED, MicroLED, etc., and this embodiment of the disclosure does not limit this. The wavelength type of the light-emitting chip 20 can also be determined according to actual needs, and can be, for example, an ultraviolet chip, a blue light chip, etc., and this embodiment of the disclosure does not limit this.

[0034] The encapsulation adhesive layer 30, the first molecular deposition layer 40, and the quantum dot layer 50 are sequentially stacked and filled within the mounting cavity 11. The encapsulation adhesive layer 30, the first molecular deposition layer 40, and the quantum dot layer 50 are respectively connected to the sidewalls of the mounting cavity 11. The encapsulation adhesive layer 30 covers the surface of the light-emitting chip 20, for example, the surface of the light-emitting chip 20 not blocked by the device support 10, to encapsulate the surface of the light-emitting chip 20. The material type of the encapsulation adhesive layer 30 can be determined according to actual needs, and can use a type of adhesive suitable for encapsulation, such as silicone, but this is not limited in the present embodiment.

[0035] The first molecular deposition layer 40 covers the surface of the side of the encapsulation layer 30 away from the light-emitting chip 20 and is a dense molecular layer. The formation method of the first molecular deposition layer 40 can be determined according to actual needs. It can be formed by physical molecular deposition methods such as vacuum evaporation, vacuum sputtering coating, vacuum ion plating, etc., and the embodiments of the present disclosure are not limited to this. The material of the first molecular deposition layer 40 can be determined according to actual needs. It can be made of inorganic materials or other materials that can form a good barrier to water and oxygen. The embodiments of the present disclosure are not limited to this. In some embodiments, the first molecular deposition layer 40 is an inorganic molecular deposition layer and can be deposited using inorganic materials such as silicon dioxide and silicon carbide. During the formation of the first molecular deposition layer 40, the material molecules are deposited layer by layer on the side surface of the encapsulation layer 30 away from the light-emitting chip 20. On the one hand, all or at least most of the pores on the side surface of the encapsulation layer 30 are filled, and on the other hand, a dense barrier film layer is formed on the upper surface of the encapsulation layer 30.

[0036] The quantum dot layer 50 covers the surface of the first molecular deposition layer 40 facing away from the encapsulation adhesive layer 30, so that the quantum dot layer 50 and the encapsulation adhesive layer 30 are separated by the first molecular deposition layer 40. The quantum dot layer 50 contains multiple quantum dots. When the light-emitting chip 20 emits light, the light enters the quantum dot layer 50, exciting the quantum dots in the quantum dot layer 50 and emitting light of a predetermined wavelength. For example, the quantum dot layer 50 can be formed by curing a mixture of, for example, quantum dot material and a yellowing-resistant and weather-resistant optical adhesive.

[0037] Compared with the related art, the quantum dot light-emitting device provided by the embodiment of the present disclosure has a dense first molecular deposition layer 40 provided on the surface of the encapsulation layer 30 on the side away from the light-emitting chip 20. The molecules in the first molecular deposition layer 40 can fill all or at least most of the pores on this side surface of the encapsulation layer 30, so that all or at least most of the paths for water and oxygen to invade the quantum dot layer 50 through the pores on this side surface of the encapsulation layer 30 are blocked. The first molecular deposition layer 40 further forms a dense barrier between the quantum dot layer 50 and the encapsulation layer 30, so that the very little water and oxygen that accidentally invade are blocked by the first molecular deposition layer 40. In this way, when water and oxygen gradually invade along the fitting gap at the bottom of the mounting cavity 11 and the pores at the bottom of the encapsulation layer 30, the first molecular deposition layer 40 can effectively block such water and oxygen from the bottom side 10b of the device bracket 10, protecting the quantum dots from the invasion of water and oxygen, thereby improving the luminous efficacy and service life of the quantum dot light-emitting device.

[0038] The thickness of the first molecular deposition layer 40 can be determined based on actual needs and is not limited in the present disclosure. In some embodiments, the thickness of the first molecular deposition layer 40 can be 50 to 100 microns, such as 50 microns, 55 microns, 60 microns, 64 microns, 68 microns, 75 microns, 80 microns, 85 microns, 88 microns, 92 microns, 95 microns, or 100 microns. Within this thickness range, the first molecular deposition layer 40 has a good water and oxygen barrier effect.

[0039] In some embodiments, the device holder 10 may have a top side 10a and a bottom side 10b that are oppositely disposed. The opening end of the mounting cavity 11 is located on the top side 10a of the device holder 10, and correspondingly, the via is located on the bottom side 10b of the device holder 10. Here, the quantum dot light-emitting device may further include an encapsulation lens 60, which is disposed on the top side 10a of the device holder 10 and covers the opening end of the mounting cavity 11. The encapsulation lens 60 encloses the opening end of the mounting cavity 11, forming a closed packaging structure.

[0040] The type of encapsulation lens 60 can be determined based on actual needs, and may include, for example, a silicone lens or a glass lens, and is not limited in this disclosure. In some examples, the encapsulation lens 60 may be a glass lens; a glass lens has excellent water and oxygen barrier properties, effectively preventing water and oxygen from the environment from invading the quantum dot layer 50 through the opening of the mounting cavity 11, thereby providing water and oxygen barrier protection for the quantum dot layer 50.

[0041] In some examples, the quantum dot light-emitting device may further include a second molecular deposition layer 70. The second molecular deposition layer 70 covers the surface of the packaging lens 60 on one side away from the device holder 10, and the second molecular deposition layer 70 covers the area surrounding the packaging lens 60 on the top side 10a of the device holder 10, so that the gap between the edge area of ​​the packaging lens 60 and the top side 10a of the device holder 10 is also covered and sealed by the second molecular deposition layer 70. The second molecular deposition layer 70 is a dense barrier molecular layer that can more comprehensively cover and seal the surface of the packaging lens 60 and the gap between the packaging lens 60 and the device holder 10, effectively preventing water and oxygen in the environment from invading the quantum dot layer 50 from the open end of the mounting cavity 11, thereby providing water and oxygen barrier protection for the quantum dot layer 50.

[0042] The material of the second molecular deposition layer 70 can be determined based on actual needs. It can be an inorganic material or other material that can effectively block water and oxygen, and this is not limited in the present embodiment. For example, the second molecular deposition layer 70 can be an inorganic molecular deposition layer, and can be formed by depositing an inorganic material such as silicon dioxide or silicon carbide.

[0043] For example, the device support 10 may further include a peripheral surface connecting the top side 10a and the bottom side 10b, and the second molecular deposition layer 70 may further cover the peripheral surface of the device support 10. In this way, the second molecular deposition layer 70 can provide relatively comprehensive coverage and sealing of both the top side 10a and the peripheral surface between the devices, further improving the sealing performance and water and oxygen resistance of the quantum dot light-emitting device.

[0044] The second molecular deposition layer 70 can be formed using physical molecular deposition methods such as vacuum evaporation, vacuum sputtering, and vacuum ion plating, and is not limited in this embodiment. The material of the second molecular deposition layer 70 can be determined based on actual needs, and can be inorganic materials such as silicon dioxide and silicon carbide, and is not limited in this embodiment.

[0045] The thickness of the second molecular deposition layer 70 can be determined based on actual needs and is not limited in the present disclosure. In some embodiments, the thickness of the second molecular deposition layer 70 can be 50 to 100 microns, such as 50 microns, 55 microns, 60 microns, 64 microns, 68 microns, 75 microns, 80 microns, 85 microns, 88 microns, 92 microns, 95 microns, or 100 microns. Within this thickness range, the second molecular deposition layer 70 has a good water and oxygen barrier effect.

[0046] In some examples, the surface of the quantum dot layer 50 away from the first molecular deposition layer 40 can be flush with the open end of the mounting cavity 11. In this way, the encapsulation adhesive layer 30, the first molecular deposition layer 40, and the quantum dot layer 50 are stacked layer by layer to fill the mounting cavity 11, so that the surface of the quantum dot layer 50 is flush with the surface of the top side 10a of the device holder 10. Furthermore, the encapsulation lens 60 can be bonded to the surface of the quantum dot layer 50 away from the first molecular deposition layer 40, thereby improving the sealing and packaging performance of the quantum dot light-emitting device.

[0047] As shown in FIG2 , in some embodiments, the quantum dot light-emitting device may further include a third molecular deposition layer 80, which may cover the surface of the quantum dot layer 50 away from the first molecular deposition layer 40. The third molecular deposition layer 80 is a dense barrier molecular layer that can effectively seal and protect the surface of the quantum dot layer 50 away from the first molecular deposition layer 40, effectively preventing water and oxygen in the environment from invading the quantum dot layer 50 through the open end of the mounting cavity 11, thereby providing water and oxygen barrier protection for the quantum dot layer 50.

[0048] In some examples, the third molecular deposition layer 80 can be filled in the mounting cavity 11, and the surface of the third molecular deposition layer 80 away from the quantum dot layer 50 can be flush with the open end of the mounting cavity 11. Exemplarily, the quantum dot light-emitting device can include the aforementioned encapsulation lens 60, which can be bonded to the surface of the third molecular deposition layer 80 away from the quantum dot layer 50. As shown in FIG3 , the quantum dot light-emitting device can also include the aforementioned second molecular deposition layer 70, which covers the surface of the encapsulation lens 60 away from the third molecular deposition layer 80 and the area surrounding the encapsulation lens 60 on the top side 10a of the device holder 10. In this way, the quantum dot light-emitting device has multiple molecular deposition layers and has a good water and oxygen barrier effect.

[0049] In other examples, the surface of the quantum dot layer 50 on one side away from the first molecular deposition layer 40 can be flush with the open end of the mounting cavity 11, and the third molecular deposition layer 80 can cover the surface of the quantum dot layer 50 on one side away from the first molecular deposition layer 40 and cover the area on the top side 10a of the device bracket 10 surrounding the open end of the mounting cavity 11.

[0050] The formation method of the third molecular deposition layer 80 can be determined according to actual needs, and can be formed by physical molecular deposition methods such as vacuum evaporation, vacuum sputtering coating, vacuum ion plating, etc., and the present disclosure is not limited to this. The material of the third molecular deposition layer 80 can be determined according to actual needs, and can be inorganic materials or other materials that can form a good barrier to water and oxygen. The present disclosure is not limited to this. For example, the third molecular deposition layer 80 can be an inorganic molecular deposition layer, and can be deposited using inorganic materials such as silicon dioxide and silicon carbide.

[0051] The thickness of the third molecular deposition layer 80 can be determined based on actual needs and is not limited in the present disclosure. In some embodiments, the thickness of the third molecular deposition layer 80 can be 50 to 100 microns, such as 50 microns, 55 microns, 60 microns, 64 microns, 68 microns, 75 microns, 80 microns, 85 microns, 88 microns, 92 microns, 95 microns, or 100 microns. Within this thickness range, the third molecular deposition layer 80 has a good water and oxygen barrier effect.

[0052] The shape of the mounting cavity 11 can be determined according to actual needs, and the embodiments of the present disclosure do not limit this. In some embodiments, the mounting cavity 11 can gradually shrink from its open end to its bottom, for example, having an inverted trapezoidal axial cross-section shape, so that the mounting cavity 11 has a shape structure with a large mouth and a small bottom, which is conducive to the diffusion and emission of light emitted by the light-emitting chip 20. In other embodiments, the mounting cavity 11 can gradually expand from its open end to its bottom, for example, having a regular trapezoidal axial cross-section shape, so that the mounting cavity 11 has a shape structure with a small mouth and a large bottom, which is conducive to limiting the light-emitting angle of the quantum dot light-emitting device.

[0053] The structure of the quantum dot layer 50 can be determined according to actual needs and is not limited in the embodiments of the present disclosure. In some embodiments, the quantum dot layer 50 may include a first quantum dot sublayer 51 and a second quantum dot layer 52, which are stacked. The first quantum dot layer 51 may be a red quantum dot sublayer, while the second quantum dot layer 52 may be a green quantum dot layer. Here, the light-emitting chip 20 may be a blue light chip that emits blue light. The first quantum dot layer 51 may emit red light when excited by blue light, and the second quantum dot layer 52 may emit green light when excited by blue light, allowing the quantum dot light-emitting device to emit colored light. In some examples, the first quantum dot sublayer 51 can be disposed on a side surface of the first molecular deposition layer 40 away from the encapsulation layer 30, and the second quantum dot sublayer 52 can be disposed on a side surface of the first quantum dot sublayer 51 away from the first molecular deposition layer 40; in other examples, the second quantum dot sublayer 52 can be disposed on a side surface of the first molecular deposition layer 40 away from the encapsulation layer 30, and the first quantum dot sublayer 51 can be disposed on a side surface of the second quantum dot sublayer 52 away from the first molecular deposition layer 40.

[0054] In a second aspect, the embodiments of the present disclosure provide a method for manufacturing a quantum dot light-emitting device, the method comprising steps S10 to S20. The quantum dot light-emitting device provided in the embodiments of the present disclosure can be manufactured using the method.

[0055] S10: As shown in FIG4 , a light emitting chip 20 is placed at the bottom of the mounting cavity 11 of the device holder 10. Here, the light emitting chip 20 can be soldered to the bottom of the mounting cavity 11 by a soldering process. For example, a chip mounter can be used to mount the light emitting chip 20 to the bottom of the mounting cavity 11.

[0056] S20: As shown in FIG5 , an encapsulation adhesive layer 30, a first molecular deposition layer 40 and a quantum dot layer 50 are sequentially formed in the mounting cavity 11 in which the light-emitting chip 20 is provided, and the encapsulation adhesive layer 30 covers the surface of the light-emitting chip 20. Exemplarily, dispensing packaging can be performed in the mounting cavity 11 by processes such as dispensing, so that the surface of the light-emitting chip 20 that is not blocked by the device bracket 10 is encapsulated and covered by the encapsulation adhesive layer 30. Exemplarily, the first molecular deposition layer 40 can be formed on the surface of the side of the encapsulation adhesive layer 30 away from the light-emitting chip 20 by physical molecular deposition methods such as vacuum evaporation, vacuum sputtering coating, and vacuum ion plating. Exemplarily, a mixed material composed of, for example, a quantum dot material and a yellowing-resistant and weather-resistant optical adhesive can be filled on the surface of the side of the first molecular deposition layer 40 away from the encapsulation adhesive layer 30, and then the filled mixed material is cured to form the quantum dot layer 50.

[0057] In some embodiments, after S20, the manufacturing method may further include S30 to S40.

[0058] S30: As shown in FIG1 , a packaging lens 60 is disposed on the top side 10a of the device holder 10. Here, the opening end of the mounting cavity 11 is located on the top side 10a of the device holder 10, and the packaging lens 60 is disposed to cover the opening end of the mounting cavity 11. Here, the packaging lens 60 can be mounted on the top side 10a of the device holder 10, corresponding to the position of the opening end of the mounting cavity 11.

[0059] S40: A second molecular deposition layer 70 is formed on a surface of the packaging lens 60 away from the device support 10 and on the top side 10a of the device support 10 in an area surrounding the packaging lens 60. For example, the second molecular deposition layer 70 can be formed by a physical molecular deposition method such as vacuum evaporation, vacuum sputtering, or vacuum ion plating.

[0060] In a third aspect, embodiments of the present disclosure provide a display device comprising a quantum dot light-emitting device according to any of the above embodiments. The type of display device can be determined based on actual needs and may include, for example, a television, monitor, smart terminal, or other product with a display function, or components thereof, and is not limited in the present disclosure.

[0061] The above is a detailed introduction to the quantum dot light-emitting device, its manufacturing method, and the display device provided in the embodiments of the present disclosure. Specific examples are used herein to illustrate the principles and implementation methods of the present disclosure. The description of the above embodiments is only used to help understand the method and core ideas of the present disclosure. At the same time, for technical personnel in this field, based on the ideas of the present disclosure, there will be changes in the specific implementation methods and application scopes. In summary, the content of this specification should not be understood as a limitation on the present disclosure.

Claims

1. A quantum dot light-emitting device, comprising a device support, a light-emitting chip, an encapsulation adhesive layer, a first molecular deposition layer, and a quantum dot layer, wherein the device support is provided with a mounting cavity, the light-emitting chip is disposed at the bottom of the mounting cavity, the encapsulation adhesive layer, the first molecular deposition layer, and the quantum dot layer are sequentially stacked and filled in the mounting cavity, and the encapsulation adhesive layer covers the surface of the light-emitting chip.

2. The quantum dot light-emitting device according to claim 1, wherein The device bracket has a top side and a bottom side arranged opposite to each other, and the open end of the mounting cavity is located on the top side of the device bracket; the quantum dot light-emitting device also includes a packaging lens, which is arranged on the top side of the device bracket and covers the open end of the mounting cavity.

3. The quantum dot light-emitting device according to claim 2, wherein: The quantum dot light-emitting device further includes a second molecular deposition layer, which covers a surface of the packaging lens away from the device support and an area surrounding the packaging lens on the top side of the device support; The second molecular deposition layer is an inorganic molecular deposition layer.

4. The quantum dot light-emitting device according to claim 3, wherein: The device support further includes a peripheral side surface connecting the top side and the bottom side, and the second molecular deposition layer further covers the peripheral side surface of the device support.

5. The quantum dot light-emitting device according to claim 3, wherein: The thickness of the second molecular deposition layer is 50 to 100 microns.

6. The quantum dot light-emitting device according to claim 2, wherein: A surface of the quantum dot layer that is away from the first molecular deposition layer is flush with the opening end of the mounting cavity.

7. The quantum dot light-emitting device according to claim 2, wherein: The packaging lens is a glass lens.

8. The quantum dot light-emitting device according to claim 1 or 2, wherein: The quantum dot light-emitting device further includes a third molecular deposition layer, which covers a surface of the quantum dot layer on a side away from the first molecular deposition layer.

9. The quantum dot light-emitting device according to claim 8, wherein: The third molecular deposition layer is an inorganic molecular deposition layer.

10. The quantum dot light emitting device according to claim 8, wherein: The thickness of the third molecular deposition layer is 50 to 100 microns.

11. The quantum dot light-emitting device according to claim 8, wherein: The third molecular deposition layer is filled in the installation cavity, and a surface of the third molecular deposition layer on a side away from the quantum dot layer is flush with the opening end of the installation cavity.

12. The quantum dot light emitting device according to claim 1, wherein: The thickness of the first molecular deposition layer is 50 to 100 microns.

13. The quantum dot light emitting device according to claim 1, wherein: The first molecular deposition layer is an inorganic molecular deposition layer.

14. The quantum dot light emitting device according to claim 1, wherein: The installation cavity gradually shrinks from its open end to its bottom.

15. The quantum dot light emitting device according to claim 1, wherein: The installation cavity gradually expands from its open end to its bottom.

16. The quantum dot light emitting device according to claim 1, wherein: The quantum dot layer includes a first quantum dot sublayer and a second quantum dot sublayer, and the first quantum dot sublayer and the second quantum dot sublayer are stacked.

17. The quantum dot light emitting device according to claim 16, wherein: The first quantum dot sublayer is a red quantum dot sublayer, the second quantum dot sublayer is a green quantum dot sublayer, and the light-emitting chip is a blue light chip.

18. A method for manufacturing a quantum dot light-emitting device, comprising: A light-emitting chip is arranged at the bottom of the mounting cavity of the device bracket; An encapsulation adhesive layer, a first molecular deposition layer and a quantum dot layer are sequentially formed in a mounting cavity where a light-emitting chip is provided, and the encapsulation adhesive layer covers the surface of the light-emitting chip.

19. The method for manufacturing a quantum dot light-emitting device according to claim 18, wherein: After sequentially forming an encapsulation adhesive layer, a first molecular deposition layer, and a quantum dot layer in the mounting cavity where the light-emitting chip is disposed, the manufacturing method further includes: A packaging lens is provided on the top side of the device support, the opening end of the mounting cavity is located on the top side of the device support, and the packaging lens covers the opening end of the mounting cavity; A second molecular deposition layer is formed on a surface of the packaging lens away from the device support and on a region surrounding the packaging lens on the top side of the device support.

20. A display device comprising the quantum dot light-emitting device according to any one of claims 1 to 17.

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