Method for controlling a wet etching process

By using real-time measurement data to control etching settings, the method addresses the inconsistency in wet etching due to chemistry alteration, ensuring consistent quality and efficient resource use in semiconductor wafer processing.

WO2025215573A1 Publication Date: 2025-10-16NEXGEN WAFER SYSTEMS PTE LTD
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Patent Information

Application Number
PCT/IB2025/053770
Authority / Receiving Office
WO · WO
Patent Type
Applications
Current Assignee / Owner
Priority Date
2024-04-10
Filing Date
2025-04-10
Publication Date
2025-10-16

AI Technical Summary

Technical Problem

The challenge in wet etching processes is the alteration of wet chemistry over time, leading to inconsistent etching results, particularly affecting surface roughness, which impacts the quality and reliability of semiconductor devices.

Method used

A method that uses real-time measurement data to control etching settings, such as chemical liquid exchange, etching duration, and composition adjustments, based on actual parameters like material removal, thickness, and surface roughness, ensuring consistent quality without relying on statistical safety margins.

Benefits of technology

This approach maintains consistent etching quality by optimizing resource use and reducing waste, thereby enhancing the reliability and efficiency of semiconductor wafer processing.

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Abstract

The disclosure relates to a method (200) for controlling a wet etching process (131, 132, 133), the wet etching process (131, 132, 133) using a chemical liquid (18) comprising one or more chemical etchants for etching specimens (1), the method (200) comprising: – obtaining measurement data indicative of a material removal, a thickness and / or a surface roughness of one or more of the specimens (1) etched by the chemical liquid (18); and – obtaining control data for controlling one or more settings of the wet etching process (131, 132, 133) based on the measurement data.
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