Micro light-emitting diode display panel and preparation method therefor, and display device

Abstract

The present disclosure relates to the technical field of display, and provides a micro light-emitting diode display panel and a preparation method therefor, and a display device. The preparation method for the micro light-emitting diode display panel comprises: providing a substrate, and forming on the substrate pixel units arranged in an array, each pixel unit comprising at least three micro light-emitting diode structures, and in a direction away from the substrate, each micro light-emitting diode structure comprising a stress buffer layer, a light-emitting stack structure, and an electrode layer which are sequentially disposed, wherein the stress buffer layer is a nanoporous structure; bonding the electrode layers of the substrate to a drive backplane, so that the electrode layer of each micro light-emitting diode structure is connected to a drive circuit corresponding to the micro light-emitting diode structure; removing at least the substrate to expose the stress buffer layers; and embedding a color-conversion quantum dot material into the stress buffer layers of some of the micro light-emitting diode structures. The micro light-emitting diode display panel manufactured in the present invention has a high yield, and the preparation method is simple and facilitates large-scale mass production.

Description

Micro-light-emitting diode display panel, its fabrication method and display device

[0001] This application claims priority to Chinese Patent Application No. 202411188105.4, filed on August 27, 2024, entitled “Micro Light Emitting Diode Display Panel and Method for Fabrication of the Same and Display Device”, the entire contents of which are incorporated herein by reference. Technical Field

[0002] This application relates to the field of display technology, and in particular to a micro light-emitting diode display panel, its fabrication method, and a display device. Background Technology

[0003] Micro-LED (Micro Light Emitting Diode) displays have many advantages such as self-illumination, wide color gamut, high stability, and the ability to achieve high brightness and transparent display, and therefore have a wide range of applications in AR (Augmented Reality) and other fields.

[0004] Due to market demand, full-color Micro-LEDs are becoming a development trend. Currently, mainstream full-color solutions include X-Cube (light-combining prism), QD (quantum dot), and stacking solutions. X-Cube's mass production is hampered by yield issues, QD has stability problems and is still in the experimental stage, and stacking solutions are difficult to apply on a large scale due to their complex manufacturing process and high cost. Therefore, there is an urgent need for a high-yield and mass-producible single-chip full-color Micro-LED solution. Summary of the Invention

[0005] The main objective of this invention is to propose a micro-light-emitting diode display panel, its fabrication method, and a display device, aiming to solve the problems of low yield and difficulty in mass production of existing Micro-LED monolithic full-color displays.

[0006] To achieve the above objectives, the present invention provides a method for fabricating a micro-light-emitting diode display panel, comprising:

[0007] Step S10: Provide a substrate and form an array of pixel units on the substrate. Each pixel unit includes at least three micro-light-emitting diode structures. In the direction away from the substrate, each micro-light-emitting diode structure includes a stress buffer layer, a light-emitting stack structure, and an electrode layer arranged sequentially. The stress buffer layer is a nanoporous structure.

[0008] Step S20: Provide a driving backplane, wherein the driving backplane carries a plurality of driving circuits that correspond one-to-one with the micro light-emitting diode structure;

[0009] Step S30: Bond the electrode layer of the substrate to the driving backplate so that the electrode layer of each micro-LED structure is connected to the driving circuit corresponding to the micro-LED structure;

[0010] Step S40: At least the substrate is removed to expose the stress buffer layer;

[0011] Step S50: Embed the color-converting quantum dot material into the stress buffer layer of a portion of the micro-LED structure.

[0012] In one embodiment, step S10 includes:

[0013] Step S11: Provide a substrate;

[0014] Step S12: A gallium nitride buffer layer, a gallium nitride intrinsic layer, and a gallium nitride doped layer are sequentially stacked on the substrate, wherein the gallium nitride doped layer is doped with metal impurities;

[0015] Step S13: Electrochemically etch the gallium nitride doped layer to remove the metal impurities and form the stress buffer layer with a nanoporous structure.

[0016] Step S14: Sequentially deposit an n-type gallium nitride layer, a multiple quantum well layer, a p-type gallium nitride layer, and the electrode layer on the stress buffer layer;

[0017] Step S15: Using photolithography, the electrode layer, the p-type gallium nitride layer, the multiple quantum well layer, the n-type gallium nitride layer, and the stress buffer layer are etched to form multiple micro-light-emitting diode structures, wherein in each micro-light-emitting diode structure, the p-type gallium nitride layer, the multiple quantum well layer, and the n-type gallium nitride layer form the light-emitting stack structure;

[0018] Step S40 includes:

[0019] The substrate, the gallium nitride buffer layer, and the gallium nitride intrinsic layer are removed sequentially to expose the stress buffer layer.

[0020] In one embodiment, in step S30, the electrode layer of the substrate is bonded to the driving backplate using a flip-chip process.

[0021] In one embodiment, in step S30, the substrate is bonded to the driving backplane using a wafer-to-wafer bonding process.

[0022] In one embodiment, in step S10, in each pixel unit, the light-emitting stacking structure of the three micro-light-emitting diode structures is a blue light-emitting stacking structure, and the three micro-light-emitting diode structures include a first type of diode structure, a second type of diode structure and a third type of diode structure;

[0023] Step S50 includes:

[0024] Red quantum dot material is embedded in the stress buffer layer of the second type of diode structure, and green quantum dot material is embedded in the stress buffer layer of the third type of diode structure.

[0025] In one embodiment, after step S50, the method further includes:

[0026] Step S60: Form an encapsulation layer covering the stress buffer layer.

[0027] In one embodiment, in step S50, the color-converting quantum dot material is embedded in the stress buffer layer of a portion of the micro-light-emitting diode structure by photolithography or printing.

[0028] In one embodiment, in step S10, the substrate is a silicon-based substrate.

[0029] In one embodiment, the drive backplane includes a silicon substrate on which a plurality of drive circuits are disposed.

[0030] The present invention also proposes a micro-light-emitting diode display panel, comprising:

[0031] A drive backplane, wherein multiple drive circuits are provided on the drive backplane;

[0032] A light-emitting module is disposed on the driving backplane. The light-emitting module includes multiple micro-light-emitting diode structures, which are arranged to form multiple pixel units in an array. Each pixel unit includes at least three micro-light-emitting diode structures. The multiple micro-light-emitting diode structures are arranged one-to-one with the multiple driving circuits. In the direction away from the driving backplane, each micro-light-emitting diode structure includes an electrode layer, a light-emitting stack structure, and a stress buffer layer that are electrically connected to the corresponding driving circuit.

[0033] The stress buffer layer is a nanoporous structure, and some of the stress buffer layers of the micro-light-emitting diode structure are provided with color-converting quantum dot material.

[0034] In one embodiment, in each pixel unit, the light-emitting stacking structure of the three micro-light-emitting diode structures is a blue light-emitting stacking structure, and the three micro-light-emitting diode structures include a first type of diode structure, a second type of diode structure and a third type of diode structure;

[0035] In the second type of diode structure, the stress buffer layer contains red quantum dot material, and in the third type of diode structure, the stress buffer layer contains green quantum dot material.

[0036] The present invention also proposes a display device comprising the above-described micro-light-emitting diode display panel.

[0037] The technical solution of this invention involves forming multiple micro-light-emitting diode (LED) structures on a substrate. Each LED structure includes a stress buffer layer, a light-emitting stack structure, and an electrode layer arranged sequentially. The stress buffer layer has a nanoporous structure. Using a stress buffer layer with a nanoporous structure as a component of the LED structure allows the stress buffer layer to release the stress during the epitaxial layer growth process, improving the quality of the epitaxial layer and resulting in better light-emitting quality of the light-emitting stack structure. A single bonding process connects the electrode layer of the LED structure on the substrate to the corresponding circuit on the driving backplane, ensuring the light-emitting performance of the LED structure. After the electrode layer of the LED structure is connected to the corresponding circuit on the driving backplane, at least the substrate is removed to expose the stress buffer layer. The stress buffer layer with a nanoporous structure serves as a carrier layer for color-conversion quantum dots. Color-conversion quantum dot materials are embedded in part of the stress buffer layer, achieving self-alignment between the color-conversion quantum dot materials and the corresponding light-emitting stack structure of the LED structure. The resulting LED display panel has a high yield, a pixel density >5000ppi, and a simple fabrication method, facilitating large-scale mass production. Attached Figure Description

[0038] To more clearly illustrate the technical solutions in the embodiments of the present invention or the prior art, the drawings used in the description of the embodiments or the prior art will be briefly introduced below. Obviously, the drawings described below are only some embodiments of the present invention. For those skilled in the art, other drawings can be obtained based on the structures shown in these drawings without creative effort.

[0039] Figure 1 is a flowchart illustrating an embodiment of the method for fabricating a micro-light-emitting diode display panel provided by the present invention;

[0040] Figure 2 is a schematic diagram of an embodiment of the method for fabricating a micro-light-emitting diode display panel provided by the present invention, in which a light-emitting stacked structure is formed on a substrate;

[0041] Figure 3 is a schematic diagram of the structure in Figure 2 where the electrode layer of the substrate is bonded to the driving backplate.

[0042] Figure 4 is a schematic diagram of the structure after removing the substrate and gallium nitride buffer layer in Figure 3;

[0043] Figure 5 is a schematic diagram of the structure after removing the intrinsic gallium nitride layer in Figure 4 and embedding the color conversion point material;

[0044] Figure 6 is a schematic diagram of the structure in which a thin film encapsulation layer is formed on the stress buffer layer in Figure 5.

[0045] Explanation of reference numerals in the attached diagram: 1. Driver backplane; 11. Driver circuit; 12. Silicon dioxide insulating layer; 2. Substrate; 21. Gallium nitride buffer layer; 22. Gallium nitride intrinsic layer; 3. Micro LED structure; 31. Stress buffer layer; 311. Red quantum dot material; 312. Red quantum dot material; 32. Light-emitting stacked structure; 321. n-type gallium nitride layer; 322. Multiple quantum well layer; 323. p-type gallium nitride layer; 33. Electrode layer; 4. Silicon dioxide insulating pillar; 5. Encapsulation layer. Detailed Implementation

[0046] The technical solutions of the embodiments of the present invention will be clearly and completely described below with reference to the accompanying drawings. Obviously, the described embodiments are only a part of the embodiments of the present invention, and not all of the embodiments. Based on the embodiments of the present invention, all other embodiments obtained by those of ordinary skill in the art without creative effort are within the scope of protection of the present invention.

[0047] It should be noted that if the embodiments of the present invention involve directional indications (such as up, down, left, right, front, back, etc.), the directional indications are only used to explain the relative positional relationship and movement of the components in a specific posture. If the specific posture changes, the directional indications will also change accordingly.

[0048] Furthermore, if the embodiments of this invention involve descriptions such as "first" or "second," these descriptions are for descriptive purposes only and should not be construed as indicating or implying their relative importance or implicitly specifying the number of technical features indicated. Thus, a feature defined with "first" or "second" may explicitly or implicitly include at least one of those features. Additionally, the use of "and / or" or "and / or" throughout the text includes three parallel solutions. For example, "A and / or B" includes solution A, solution B, or a solution where both A and B are satisfied simultaneously. Furthermore, the technical solutions of the various embodiments can be combined with each other, but this must be based on the ability of those skilled in the art to implement them. When the combination of technical solutions is contradictory or impossible to implement, it should be considered that such a combination of technical solutions does not exist and is not within the scope of protection claimed by this invention.

[0049] This invention proposes a method for fabricating a micro-light-emitting diode display panel to solve the problems of low yield and difficulty in mass production of existing Micro-LED monolithic full-color displays.

[0050] Please refer to Figure 1. In one embodiment of the present invention, the method for fabricating the micro-light-emitting diode display panel includes:

[0051] Step S10: Provide a substrate 2 and form an array of pixel units on the substrate 2. Each pixel unit includes at least three micro-light-emitting diode structures 3. In the direction away from the substrate 2, each micro-light-emitting diode structure 3 includes a stress buffer layer 31, a light-emitting stack structure 32, and an electrode layer 33 arranged sequentially, as shown in Figure 2. The stress buffer layer 31 is a nanoporous structure.

[0052] Step S20: Provide a driving backplane 1, which carries a plurality of driving circuits 11 corresponding one-to-one with the micro light-emitting diode structure 3, see Figure 3;

[0053] Step S30: Bond the electrode layer 33 of the substrate 2 to the driving backplate 1 so that the electrode layer 33 of each micro-light-emitting diode structure 3 is connected to the driving circuit 11 corresponding to the micro-light-emitting diode structure 3, see Figure 3.

[0054] Step S40: At least the substrate 2 is removed to expose the stress buffer layer 31, see Figures 4 and 5;

[0055] Step S50: Embed the color-converting quantum dot material into the stress buffer layer 31 of the partial micro-LED structure 3.

[0056] The technical solution of this invention involves forming multiple micro-light-emitting diode (LED) structures on a substrate. Each LED structure includes a stress buffer layer, a light-emitting stack structure, and an electrode layer arranged sequentially. The stress buffer layer has a nanoporous structure. Using a stress buffer layer with a nanoporous structure as a component of the LED structure allows the stress buffer layer to release the stress during the epitaxial layer growth process, improving the quality of the epitaxial layer and resulting in better light-emitting quality of the light-emitting stack structure. A single bonding process connects the electrode layer of the LED structure on the substrate to the corresponding circuit on the driving backplane, ensuring the light-emitting performance of the LED structure. After the electrode layer of the LED structure is connected to the corresponding circuit on the driving backplane, at least the substrate is removed to expose the stress buffer layer. The stress buffer layer with a nanoporous structure serves as a carrier layer for color-conversion quantum dots. Color-conversion quantum dot materials are embedded in part of the stress buffer layer, achieving self-alignment between the color-conversion quantum dot materials and the corresponding light-emitting stack structure of the LED structure. The resulting LED display panel has a high yield, a pixel density >5000ppi, and a simple fabrication method, facilitating large-scale mass production. Each micro-LED structure's electrode layer is connected to a corresponding driving circuit. Driven by the driving circuit, the corresponding light-emitting stack structure emits light, causing the corresponding color-conversion quantum dot material to produce the desired color, thus achieving a single-chip full-color display. After the substrate's electrode layer is bonded to the driving backplane, at least the substrate is removed to expose a stress buffer layer. The color-conversion quantum dots are then embedded into the stress buffer layer, ensuring that the color-conversion quantum dot material corresponds to the light-emitting stack structure, eliminating optical crosstalk and improving luminous stability.

[0057] In an embodiment of the present invention, step S10 includes:

[0058] Step S11: Provide substrate 2;

[0059] Step S12: A gallium nitride buffer layer 21, a gallium nitride intrinsic layer 22, and a gallium nitride doped layer are sequentially stacked on the substrate 2, wherein the gallium nitride doped layer is doped with metal impurities.

[0060] Step S13: Electrochemically etch the gallium nitride doped layer to remove metal impurities and form a stress buffer layer 31 with a nanoporous structure.

[0061] Step S14: Sequentially deposit an n-type gallium nitride layer 321, a multi-quantum well layer 322, a p-type gallium nitride layer 323, and an electrode layer 33 on the stress buffer layer 31;

[0062] Step S15: Using photolithography, the electrode layer 33, p-type gallium nitride layer 323, multiple quantum well layer 322, n-type gallium nitride layer 321, stress buffer layer 31, and gallium nitride intrinsic layer 22 are etched to form multiple micro light-emitting diode structures 3. In each micro light-emitting diode structure 3, the p-type gallium nitride layer 323, multiple quantum well layer 322, and n-type gallium nitride layer 321 form a light-emitting stacked structure 32.

[0063] Step S40 includes:

[0064] The substrate 2, gallium nitride buffer layer 21, and gallium nitride intrinsic layer 22 are removed sequentially to expose the stress buffer layer 31.

[0065] The technical solution of this invention involves sequentially forming a gallium nitride (GaN) buffer layer, a GaN intrinsic layer, and a GaN layer on a substrate. The GaN layer is then electrochemically etched to form a stress buffer layer with a nanoporous structure. An n-type GaN layer, a multi-quantum-well layer, a p-type GaN layer, and an electrode layer are sequentially deposited on the stress buffer layer. Photolithography is then used to etch the electrode layer, p-type GaN layer, multi-quantum-well layer, n-type GaN layer, stress buffer layer, and GaN intrinsic layer to form multiple micro-light-emitting diode (LED) structures. These micro-LED structures are isolated from each other by silicon dioxide insulating pillars 4. The light-emitting stack structure formed by the p-type GaN layer, multi-quantum-well layer, and n-type GaN layer emits blue light, which can excite corresponding color-converting quantum dot materials to emit light. When electrochemically etching the gallium nitride (GaN) layer, potassium hydroxide (KOH) solution can be used as the etching solution. The etching voltage is 15–20 V, and the etching time is 40–50 s. The resulting stress buffer layer has nanopores with a thickness of 0.1–1 μm. After the electrode layer of the substrate is bonded to the driving backplate, the substrate is removed. The GaN buffer layer is removed using a chemical mechanical polishing (CMP) process. The intrinsic GaN layer is then removed using a wet or dry etching process to expose the stress buffer layer, facilitating the embedding of color-conversion quantum dot materials.

[0066] In an embodiment of the present invention, in step S30, a flip-chip process is used to bond the electrode layer 33 of the substrate 2 to the driving backplate 1. Using a flip-chip process to bond the electrode layer 33 of the substrate 2 to the driving backplate 1 can improve production efficiency.

[0067] In an embodiment of the present invention, in step S30, a wafer-to-wafer bonding process is used to bond the substrate 2 to the driving backplane 1. The advantages of the wafer-to-wafer bonding process are its high alignment accuracy, high throughput, and high bonding yield, making it suitable for mass production.

[0068] In an embodiment of the present invention, in step S10, in each pixel unit, the light-emitting stacking structure 32 of the three micro light-emitting diode structures 3 are all blue light-emitting stacking structures, and the three micro light-emitting diode structures 3 include a first type of diode structure, a second type of diode structure and a third type of diode structure.

[0069] In an embodiment of the present invention, step S50 includes:

[0070] Red quantum dot material 311 is embedded in the stress buffer layer 31 of the second type of diode structure, and green quantum dot material 312 is embedded in the stress buffer layer 31 of the third type of diode structure, as shown in Figure 5.

[0071] The technical solution of this invention uses three micro-light-emitting diode (LED) structures to form a pixel unit. In each pixel unit, the light-emitting stacking structure of the three LED structures is a blue light stacking structure. The blue light emitted by the blue light stacking structure (emitting light at a wavelength of 450-495nm) serves as a light source, which can excite the corresponding color-converting quantum dot material to emit light, thereby producing the desired color. Each pixel unit includes a first type of diode structure, a second type of diode structure, and a third type of diode structure. The stress buffer layer of the second type of diode structure is embedded with red quantum dot material, which emits light at a wavelength of 620-750nm. Under blue light excitation, the red quantum dot material can emit red light. The stress buffer layer of the third type of diode structure is embedded with green quantum dot material, which emits light at a wavelength of 495-570nm. Under blue light excitation, the green quantum dot material can emit green light. The first type of diode structure does not contain quantum dot material, so it outputs blue light. Each pixel unit includes three basic colors: red (R), green (G), and blue (B). A color array is generated by the RGB color model, which can realize single-chip full-color display.

[0072] In an embodiment of the present invention, after step S50, the method further includes: step S60, forming an encapsulation layer 5 covering the stress buffer layer 31, as shown in FIG6. The stress buffer layer is encapsulated in a thin film to form a thin film encapsulation layer covering the stress buffer layer, effectively blocking the micro-LED structure from external moisture, preventing moisture and harmful substances from entering the micro-LED structure, improving the luminous stability of the quantum dots, and extending the lifespan of the micro-LED display panel.

[0073] In an embodiment of the present invention, in step S50, the color-converting quantum dot material is embedded in the stress buffer layer 31 of a portion of the micro-light-emitting diode structure 3 by photolithography or printing. Photolithography or inkjet printing is used to allow the stress buffer layer to contact the solution containing the quantum dots, thereby impregnating the quantum dots into the pores of the stress buffer layer; the quantum dots can be CdSe (cadmium selenide) colloidal quantum dots with a cross-sectional size of 1–10 nm.

[0074] In an embodiment of the present invention, substrate 2 is a silicon-based substrate. The silicon substrate is characterized by low cost, large area, high quality, and good electrical and thermal conductivity. Furthermore, the silicon substrate allows for non-destructive peeling, eliminating stress between the substrate and the gallium nitride material layer.

[0075] In an embodiment of the present invention, the driving backplane 1 includes a silicon substrate on which a plurality of driving circuits 11 are disposed. The number of driving circuits disposed on the silicon substrate is adapted to the number of micro light-emitting diode structures, so as to achieve independent control of each micro light-emitting diode structure, and the plurality of driving circuits are isolated from each other by a silicon dioxide insulating layer 12.

[0076] The present invention also proposes a micro-light-emitting diode display panel, comprising:

[0077] A drive backplane 1 is provided with a plurality of drive circuits 11.

[0078] The light-emitting module is disposed on the driving backplate 1. The light-emitting module includes multiple micro light-emitting diode structures 3. The micro light-emitting diode structures 3 are arranged to form multiple pixel units arranged in an array. Each pixel unit includes at least three micro light-emitting diode structures 3. The multiple micro light-emitting diode structures 3 are arranged one-to-one with multiple driving circuits 11. In the direction away from the driving backplate 1, each micro light-emitting diode structure 3 includes an electrode layer 33, a light-emitting stack structure 32, and a stress buffer layer 31 that are electrically connected to the corresponding driving circuit 11.

[0079] Among them, the stress buffer layer 31 has a nanoporous structure, and some of the stress buffer layers 31 of the micro-light-emitting diode structure 3 are provided with color conversion quantum dot materials.

[0080] In the embodiments of the present invention, in each pixel unit, the light-emitting stacking structure 32 of the three micro light-emitting diode structures 3 are all blue light-emitting stacking structures, and the three micro light-emitting diode structures 3 include a first type of diode structure, a second type of diode structure and a third type of diode structure.

[0081] Among them, the stress buffer layer 31 of the second type of diode structure contains red quantum dot material, and the stress buffer layer 31 of the third type of diode structure contains green quantum dot material.

[0082] The present invention also proposes a display device including the aforementioned micro-light-emitting diode display panel. Specifically, in an embodiment of the present invention, the display device may be AR glasses, and the display device includes a micro-light-emitting diode display panel, a collimating lens disposed on the encapsulation layer of the micro-light-emitting diode display panel, and an optical waveguide disposed on the collimating lens.

[0083] In the technical solution of the present invention, the collimating lens can collimate the light emitted from the micro-LED display panel, and the optical waveguide can efficiently transmit the collimated image to the user's eyes. The structure of the micro-LED display panel is as described in the above embodiments. Since the micro-LED display panel adopts all the technical solutions of all the above embodiments, it has at least all the beneficial effects brought about by the technical solutions of the above embodiments, which will not be described in detail here.

[0084] The above description is merely an exemplary embodiment of the present invention and does not limit the patent scope of the present invention. Any equivalent structural transformations made using the contents of the present invention specification and drawings under the technical concept of the present invention, or direct / indirect applications in other related technical fields, are included within the patent protection scope of the present invention.

Claims

1. A method for fabricating a micro-light-emitting diode display panel, characterized in that, include: Step S10: Provide a substrate and form an array of pixel units on the substrate. Each pixel unit includes at least three micro-light-emitting diode structures. In the direction away from the substrate, each micro-light-emitting diode structure includes a stress buffer layer, a light-emitting stack structure, and an electrode layer arranged sequentially. The stress buffer layer is a nanoporous structure. Step S20: Provide a driving backplane, wherein the driving backplane carries a plurality of driving circuits that correspond one-to-one with the micro light-emitting diode structure; Step S30: Bond the electrode layer of the substrate to the driving backplate so that the electrode layer of each micro-LED structure is connected to the driving circuit corresponding to the micro-LED structure; Step S40: At least the substrate is removed to expose the stress buffer layer; Step S50: Embed the color-converting quantum dot material into the stress buffer layer of a portion of the micro-LED structure.

2. The method for fabricating a micro-light-emitting diode display panel as described in claim 1, characterized in that, Step S10 includes: Step S11: Provide a substrate; Step S12: A gallium nitride buffer layer, a gallium nitride intrinsic layer, and a gallium nitride doped layer are sequentially stacked on the substrate, wherein the gallium nitride doped layer is doped with metal impurities; Step S13: Electrochemically etch the gallium nitride doped layer to remove the metal impurities and form the stress buffer layer with a nanoporous structure. Step S14: Sequentially deposit an n-type gallium nitride layer, a multiple quantum well layer, a p-type gallium nitride layer, and the electrode layer on the stress buffer layer; Step S15: Using photolithography, the electrode layer, the p-type gallium nitride layer, the multiple quantum well layer, the n-type gallium nitride layer, and the stress buffer layer are etched to form multiple micro-light-emitting diode structures, wherein in each micro-light-emitting diode structure, the p-type gallium nitride layer, the multiple quantum well layer, and the n-type gallium nitride layer form the light-emitting stack structure; Step S40 includes: The substrate, the gallium nitride buffer layer, and the gallium nitride intrinsic layer are removed sequentially to expose the stress buffer layer.

3. The method for fabricating a micro-light-emitting diode display panel as described in claim 1, characterized in that, In step S30, the electrode layer of the substrate is bonded to the driving backplate using a flip-chip process.

4. The method for fabricating a micro-light-emitting diode display panel as described in claim 1, characterized in that, In step S30, the substrate is bonded to the driving backplane using a wafer-to-wafer bonding process.

5. The method for fabricating a micro-light-emitting diode display panel as described in claim 1, characterized in that, In step S10, in each pixel unit, the light-emitting stacking structure of the three micro-light-emitting diode structures is a blue light stacking structure, and the three micro-light-emitting diode structures include a first type of diode structure, a second type of diode structure and a third type of diode structure. Step S50 includes: Red quantum dot material is embedded in the stress buffer layer of the second type of diode structure, and green quantum dot material is embedded in the stress buffer layer of the third type of diode structure.

6. The method for fabricating a micro-light-emitting diode display panel as described in claim 1 or 5, characterized in that, After step S50, the method further includes: Step S60: Form an encapsulation layer covering the stress buffer layer.

7. The method for fabricating a micro-light-emitting diode display panel as described in claim 1 or 5, characterized in that, In step S50, the color-converting quantum dot material is embedded in the stress buffer layer of a portion of the micro-light-emitting diode structure by photolithography or printing.

8. The method for fabricating a micro-light-emitting diode display panel as described in claim 1, characterized in that, In step S10, the substrate is a silicon-based substrate.

9. The method for fabricating a micro-light-emitting diode display panel as described in claim 1, characterized in that, In step S20, the driving backplane includes a silicon substrate, on which a plurality of driving circuits are arranged.

10. A micro-light-emitting diode display panel, characterized in that, include: A drive backplane, wherein multiple drive circuits are provided on the drive backplane; A light-emitting module is disposed on the driving backplane. The light-emitting module includes multiple micro-light-emitting diode structures, which are arranged to form multiple pixel units in an array. Each pixel unit includes at least three micro-light-emitting diode structures. The multiple micro-light-emitting diode structures are arranged one-to-one with the multiple driving circuits. In the direction away from the driving backplane, each micro-light-emitting diode structure includes an electrode layer, a light-emitting stack structure, and a stress buffer layer that are electrically connected to the corresponding driving circuit. The stress buffer layer is a nanoporous structure, and some of the stress buffer layers of the micro-light-emitting diode structure are provided with color-converting quantum dot material.

11. The micro-light-emitting diode display panel as described in claim 10, characterized in that, In each pixel unit, the light-emitting stacking structure of the three micro-light-emitting diode structures is a blue light stacking structure, and the three micro-light-emitting diode structures include a first type of diode structure, a second type of diode structure and a third type of diode structure. In the second type of diode structure, the stress buffer layer contains red quantum dot material, and in the third type of diode structure, the stress buffer layer contains green quantum dot material.

12. A display device, characterized in that, Including the micro light-emitting diode display panel as described in claim 10 or 11.

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