Quantum sensor device
The quantum sensor device with controlled nitrogen-vacancy centers in a single crystal diamond substrate addresses sensitivity and stability issues by optimizing concentration and annealing processes, enhancing magnetic field detection capabilities.
Patent Information
- Application Number
- PCT/EP2025/079128
- Authority / Receiving Office
- WO · WO
- Patent Type
- Applications
- Current Assignee / Owner
- Priority Date
- 2024-10-11
- Filing Date
- 2025-10-09
- Publication Date
- 2026-04-16
AI Technical Summary
Existing quantum sensor devices using nitrogen-vacancy (NV-) centers in diamond substrates face challenges in achieving high sensitivity and stability for magnetic field measurements, particularly in terms of photoionization resistance and readout contrast.
A quantum sensor device comprising a single crystal diamond substrate with controlled concentrations of nitrogen atoms, converted into NV- centers through precise annealing, and optimized for high ODMR readout contrast and reduced photoionization, utilizing a method that includes direct temperature control during the annealing process.
The device achieves improved magnetic field measurement sensitivity and stability, with enhanced readout contrast and resistance to photoionization, enabling efficient and reliable magnetic field detection.