Member for semiconductor manufacturing apparatus

Abstract

The purpose of the present invention is to provide a member for a semiconductor manufacturing apparatus which is provided with a plurality of zoned heater electrodes, and the incidence of cracking is suppressed. In this member for a semiconductor manufacturing apparatus, each of a plurality of heater electrodes has a heater line extending in a direction parallel to the upper surface of a ceramic substrate. When the plurality of heater electrodes are virtually viewed in plan view, 90% or more of the length portion of the heater line length in at least one of the plurality of heater electrodes is composed of a plurality of straight line portions having an angular range within 20°. Each jumper electrode layer is composed of a plurality of planar jumper electrodes electrically separated by a linearly extending insulator, and the linearly extending insulator does not linearly overlap any straight portion of the heater line of at least one heater electrode in the vertical direction.

Description

Components for semiconductor manufacturing equipment 【0001】 This invention relates to a component for semiconductor manufacturing equipment. 【0002】 Conventionally, semiconductor manufacturing equipment components used for wafer holding, temperature control, and transport are known. These types of semiconductor manufacturing equipment components are also called wafer stands, electrostatic chucks, susceptors, etc., and generally have the function of attracting wafers by electrostatic force by applying electrostatic power to the built-in electrodes. 【0003】 Wafer processing methods are diverse, including etching and CVD, and the optimal wafer temperature distribution differs depending on the type of processing. Therefore, semiconductor manufacturing equipment components are required to have the ability to control the wafer temperature distribution. To meet these requirements, semiconductor manufacturing equipment components equipped with multi-zone heaters, which have a ceramic substrate containing multiple heater electrodes, are known. 【0004】 Japanese Patent Publication No. 2020-129633 (Patent Document 1) describes that the heater electrode is formed by screen printing a metallized paste onto a ceramic green sheet and then firing it. The heater electrode is electrically connected to a driver electrode for power supply. 【0005】 The publication states, "During this screen printing process, variations in the thickness of the metallizing paste coating tend to occur depending on the relationship between the stretching direction of the heater line portion 510 of the heater electrode 500 and the movement direction of the squeegee. For example, in areas where the stretching direction of the heater line portion 510 and the movement direction of the squeegee are approximately perpendicular (or close to perpendicular), the thickness of the metallizing paste coating tends to be thinner compared to other areas. Variations in the thickness of the metallizing paste coating result in variations in the amount of heat generated at each position of the heater line portion 510 of the finished heater electrode 500, which in turn reduces the controllability of the temperature distribution of the adsorption surface S1, and is therefore undesirable." 【0006】The electrostatic chuck heater described in Japanese Patent Publication No. 6397588 (Patent Document 2) comprises an electrostatic chuck, a sheet heater, and a support base. The sheet heater is described as a disc-shaped member, and is made of a heat-resistant resin sheet with a correction heater electrode, jumper wires, a ground electrode, and a reference heater electrode built inside. The correction heater electrode is wired in a continuous, straight line manner, extending from one end to the other to cover the entire zone. Referring to Figure 2 of the said publication, the jumper wires are arranged in a zigzag pattern below the correction heater electrode, which extends in a zigzag pattern. 【0007】 Japanese Patent Publication No. 2020-129633, Japanese Patent No. 6397588 【0008】 In semiconductor manufacturing equipment components with multi-zone heaters, heater electrodes are often formed by screen printing. As suggested in Patent Document 1, if there is a difference between the printing direction and the extension direction of the heater lines constituting the heater electrodes, the printing thickness will vary, so it is preferable to match the printing direction and the extension direction of the heater lines. 【0009】 On the other hand, in semiconductor manufacturing equipment components with multi-zone heaters, it is beneficial to provide driver electrodes (or jumper wires) to supply power to the heater electrodes. However, Patent Document 1 does not describe the specific structure of the driver electrodes. Furthermore, in Patent Document 2, the direction in which the linear gaps between jumper wires extend largely coincides with the direction in which the heater lines constituting the correction heater electrodes extend. As a result, there are portions where the direction in which the linear gaps between jumper wires extend and the extension direction of the heater lines linearly overlap in the vertical direction. 【0010】 According to the inventors' research, when the heater line extends unevenly in a particular direction, and the direction in which the linear gap between jumper wires extends and the direction in which the heater line extends overlap linearly in the vertical direction, as shown in Patent Document 2, cracks are likely to occur along that direction during firing shrinkage that occurs during the manufacturing process. 【0011】In view of the above circumstances, in one embodiment of the present invention, the object of providing a semiconductor manufacturing apparatus component comprising a plurality of zoned heater electrodes, wherein the occurrence of cracks is suppressed. 【0012】The inventors have diligently studied to solve the above problems and have created the present invention as illustrated below. [Aspect 1] A semiconductor manufacturing apparatus member comprising a ceramic substrate having: an upper surface on which a wafer can be placed; a terminal cluster portion in which a plurality of terminals are arranged within a single section; a plurality of zoned heater electrodes; and one or more jumper electrode layers disposed between the plurality of heater electrodes and each terminal of the terminal cluster portion and electrically connected to both, wherein each of the plurality of heater electrodes has a heater line extending in a direction parallel to the upper surface of the ceramic substrate, and when the plurality of heater electrodes are viewed virtually from a planar perspective, 90% or more of the length of the heater line of at least one of the plurality of heater electrodes is composed of a plurality of straight sections with an angular range of 20° or less, and each jumper electrode layer is composed of a plurality of planar jumper electrodes electrically separated by a linearly extending insulator, and the linearly extending insulator does not linearly overlap any of the straight sections of the heater line of at least one of the heater electrodes in the vertical direction. [Aspect 2] When the plurality of heater electrodes are viewed virtually from a planar perspective, 90% or more of the total length of all the heater lines of the plurality of heater electrodes is composed of a plurality of straight sections with an angular range of 20° or less, and the linearly extending insulator does not linearly overlap any of the straight sections of all the heater lines in the vertical direction, as described in Aspect 1. [Aspect 3] Each of the plurality of heater electrodes is electrically connected to a planar jumper electrode, and the semiconductor manufacturing apparatus component according to Aspect 1 or 2 satisfies the following equation 1: A2 / A1≧10 ...Equation 1 (wherein A1 represents the average cross-sectional area of ​​the cross section perpendicular to the direction of current flow of the heater electrode, and A2 represents the average cross-sectional area of ​​the cross section perpendicular to the direction of current flow of the planar jumper electrode).[Aspect 4] A semiconductor manufacturing apparatus component according to any one of aspects 1 to 3, wherein each of the plurality of terminals arranged in the terminal cluster is electrically connected to a predetermined planar jumper electrode via a first via extending in the vertical direction, and each of the plurality of heater electrodes is electrically connected to the heater electrode via the predetermined planar jumper electrode via the first via and satisfies the following equation 2: A3 / A1≧5 ...Equation 2 (wherein A1 represents the average cross-sectional area of ​​the cross section perpendicular to the direction of current flow of the heater electrode, and A3 represents the average cross-sectional area of ​​the cross section perpendicular to the direction of current flow of the first via). [Aspect 5] Each of the plurality of planar jumper electrodes is electrically connected to a predetermined heater electrode selected from the plurality of heater electrodes via a second via extending in the vertical direction, and each of the plurality of heater electrodes is electrically connected to the heater electrode via a second via and satisfies the following equation 3: A4 / A1≧5 ...Equation 3 (wherein A1 represents the average cross-sectional area of ​​the cross section perpendicular to the current-carrying direction of the heater electrode, and A4 represents the average cross-sectional area of ​​the cross section perpendicular to the current-carrying direction of the second via). A semiconductor manufacturing apparatus member according to any one of aspects 1 to 4. [Aspect 6] A semiconductor manufacturing apparatus member according to any one of aspects 1 to 5, wherein the ceramic substrate has 10 or more zoned heater electrodes. [Aspect 7] A semiconductor manufacturing apparatus member according to any one of aspects 1 to 6, wherein the ceramic substrate further has electrostatic adsorption electrodes. [Aspect 8] A semiconductor manufacturing apparatus member according to any one of aspects 1 to 7, wherein the ceramic constituting the ceramic substrate contains 90% by mass or more of alumina. [Aspect 9] The heater electrode is a semiconductor manufacturing apparatus component according to any one of aspects 1 to 8, containing one or more elements selected from W, Mo, and Ru. [Aspect 10] The first via is a semiconductor manufacturing apparatus component according to aspect 4, or any one of aspects 5 to 9 dependent on aspect 4, containing one or more elements selected from W, Mo, and Ru. [Aspect 11] The second via is a semiconductor manufacturing apparatus component according to aspect 5, or any one of aspects 6 to 9 dependent on aspect 5, containing one or more elements selected from W, Mo, and Ru.[Aspect 12] A semiconductor manufacturing apparatus component according to any one of aspects 1 to 11, wherein, when the plurality of heater electrodes are viewed virtually from a planar perspective, the heater line of at least one of the plurality of heater electrodes extends linearly such that the following repeats from one end to the other: a first straight portion extending in a first direction, a second straight portion connected to the first straight portion and extending in a second direction perpendicular to the first direction, a third straight portion connected to the second straight portion and extending in the opposite direction to the first direction, a fourth straight portion connected to the third straight portion and extending in a second direction perpendicular to the first direction, and a first straight portion connected to the fourth straight portion and extending in the first direction. [Aspect 13] A semiconductor manufacturing apparatus component according to aspect 12, wherein the straight-line distance from one end to the other of the heater line is 5 mm or more. 【0013】 According to a semiconductor manufacturing equipment component of one embodiment of the present invention, the occurrence of cracks during the manufacturing process is suppressed. Therefore, the semiconductor manufacturing equipment component can be manufactured with an improved yield. 【0014】 This is a schematic longitudinal cross-sectional view of a semiconductor manufacturing equipment component according to one embodiment of the present invention (a cross-sectional view when cut by a plane including the central axis of the semiconductor manufacturing equipment component). This is a schematic partial enlargement view of the area enclosed by the frame in Figure 1. For a semiconductor manufacturing equipment component according to one embodiment of the present invention, a schematic planar structure of multiple heater electrodes viewed virtually from above is shown, along with a partial enlargement view. For a semiconductor manufacturing equipment component according to one embodiment of the present invention, a schematic planar structure of three jumper electrode layers at the same height viewed virtually from above is shown, along with a partial enlargement view. When the upper surface, which is the wafer mounting surface of the ceramic substrate, is circular, the number of terminal clusters is 3, and the number of jumper electrode layers is 5, schematic examples of the shapes of multiple planar jumper electrodes constituting each jumper electrode layer from the 1st to the 5th layer, and an example of the shape of a common jumper are schematically shown. This is a schematic planar view of each jumper electrode layer from the 1st to the 3rd layer. This is a schematic view of the five jumper electrode layers exemplified in Figure 5 when viewed virtually from above. 【0015】Next, embodiments of the present invention will be described in detail with reference to the drawings. The present invention is not limited to the following embodiments, and it should be understood that appropriate design changes, improvements, etc., may be made based on the ordinary knowledge of those skilled in the art, without departing from the spirit of the invention. Furthermore, in this specification, "up" and "down" are for convenience's purposes to represent the relative positional relationship when the semiconductor manufacturing equipment component is placed on a horizontal plane with the upper surface on which a wafer can be placed facing upwards, and do not represent an absolute positional relationship. Therefore, depending on the orientation of the semiconductor manufacturing equipment component, "up" and "down" may become "down" and "up," "left" and "right," or "front" and "back." 【0016】 <1. Configuration of Semiconductor Manufacturing Equipment Components> Referring to Figures 1 and 2, a semiconductor manufacturing equipment component 10 according to one embodiment of the present invention can be used when performing processes such as CVD and etching on a wafer W using plasma, and can be fixed to a mounting plate (not shown) provided inside a semiconductor process chamber. The semiconductor manufacturing equipment component 10 comprises a ceramic substrate 20 and a base plate 30 located on the lower surface 23 side of the ceramic substrate 20 and incorporating a refrigerant flow path 32. The ceramic substrate 20 and the base plate 30 can be joined, for example, by a bonding layer 40. 【0017】 (1-1. Ceramic Substrate) A ceramic substrate 20 according to one embodiment of the present invention has an upper surface 21a on which a wafer W can be placed, a terminal cluster 52 in which a plurality of terminals 52a are arranged within a single section 55, a plurality of zoned heater electrodes 27, and one or more jumper electrode layers 29 arranged between the plurality of heater electrodes 27 and each terminal 52a of the terminal cluster 52 and electrically connected to both. 【0018】A ceramic substrate 20 according to one embodiment of the present invention comprises, more specifically, a central portion 20a having a circular upper surface 21a in plan view, and an outer peripheral portion 20b having an annular upper surface 21b in plan view on the outer periphery of the central portion 20a. A wafer W can be placed on the upper surface 21a, and a focus ring 78 can be placed on the upper surface 21b. The ceramic substrate 20 is made of a ceramic material such as alumina or aluminum nitride. In a preferred embodiment, the ceramics constituting the ceramic substrate 20 contain 90% by mass or more of alumina. The upper surface 21b of the outer peripheral portion 20b is lower than the upper surface 21a of the central portion 20a. The lower surfaces 23 of the central portion 20a and the outer peripheral portion 20b may be on the same plane. The ceramic substrate 20 may have a central portion 20a but not an outer peripheral portion 20b, that is, it may not have a lower upper surface 21b. 【0019】 In the embodiment shown in Figure 1, the focus ring 78 and the upper surface of the wafer W are flush, but the upper surface of the focus ring 78 may be higher than the wafer. In the embodiment shown in Figure 1, the outer diameter of the focus ring 78 and the outer diameter of the outer periphery 20b of the ceramic substrate 20 are the same, but their outer diameters do not have to be the same. 【0020】 The upper surface 21a on which the wafer W can be placed may be provided with a plurality of small protrusions (not shown). Alternatively, a sealing band (not shown) may be formed along the outer edge of the upper surface 21a. In this case, the wafer W may be supported by the top surface of the sealing band and the top surfaces of the plurality of small protrusions. 【0021】 The central portion 20a of the ceramic substrate 20 can have, for example, a diameter of 190 to 450 mm and a thickness of 1 to 20 mm. Furthermore, an electrostatic adsorption electrode 26 can be embedded in the central portion 20a of the ceramic substrate 20, on the side closer to the upper surface 21a. The electrostatic adsorption electrode 26 can be formed from a material containing, for example, W, Mo, WC, MoC, etc. The electrostatic adsorption electrode 26 can be, for example, a planar electrode. The ceramic substrate 20 may have one layer of electrostatic adsorption electrode 26 embedded, or it may have two or more layers embedded with gaps in between. 【0022】The electrostatic adsorption electrode 26 is connected to an external DC power supply via a power supply member (not shown). A low-pass filter may be placed in the power supply member. The power supply member is electrically insulated from the bonding layer 40 and the base plate 30. When a DC voltage is applied to the electrostatic adsorption electrode 26, the wafer W is adsorbed and fixed to the upper surface 21a by electrostatic adsorption force, and when the application of the DC voltage is removed, the adsorption and fixation of the wafer W to the upper surface 21a is released. The ceramic substrate 20 may incorporate an RF electrode for plasma generation in place of or in addition to the electrostatic adsorption electrode 26. 【0023】 Furthermore, the ceramic substrate 20 has a plurality of zoned heater electrodes 27. The plurality of heater electrodes 27 are arranged, for example, so that a plurality of zones are formed in a plane parallel to the upper surface 21a of the ceramic substrate 20. The output of each of the zoned heater electrodes 27 can be controlled. As a result, the upper surface 21a of the ceramic substrate 20 is divided into a plurality of zones, and temperature control is possible for each zone, thereby improving the performance of controlling the temperature distribution of the wafer. 【0024】 The heater electrode 27 may be installed only in the central part 20a of the ceramic substrate 20, but the heater electrode 27 may also be installed in the outer peripheral part 20b of the ceramic substrate 20 (i.e., below the focus ring 78). In order to improve the performance of controlling the temperature distribution of the wafer, the ceramic substrate 20 preferably has 10 or more heater electrodes 27 in total, more preferably 50 or more, and even more preferably 100 or more. 【0025】Figure 3 shows a schematic planar structure of the multiple heater electrodes 27 when viewed virtually from above. Each of the multiple heater electrodes 27 has a heater line 27c extending in a direction parallel to the upper surface 21a of the ceramic substrate 20. Each of the multiple heater electrodes 27 has a first connection part 27a (+ side), which is the connection point with the second via 62, and a second connection part 27b (- side), which is the connection point with the fourth via 64, and these two are electrically connected via the heater line 27c. In one embodiment, the heater line 27c extends linearly in a direction parallel to the upper surface 21a of the ceramic substrate 20 in a single continuous line. 【0026】 The average cross-sectional area A1 of the heater electrode 27 perpendicular to the direction of current flow (the direction in which the heater line 27c extends) is not limited, but a smaller cross-sectional area has the advantage of higher resistance, allowing the necessary heat to be obtained with a smaller current. However, if the cross-sectional area is too small, variations in printing thickness will have a greater impact on the amount of heat generated. Therefore, it is generally considered to be between 0.0001 and 0.1 mm. 2 Preferably, 0.0005 to 0.01 mm 2 It is more preferable to do so, 0.001 to 0.005 mm 2 It is even more preferable to do so. In this specification, the average cross-sectional area A1 of the heater electrode 27 is measured by the following procedure. The heater electrode 27 to be measured is cut at four length positions of 20%, 40%, 60%, and 80% of the total length of the heater line 27c, and cross sections perpendicular to the direction of current flow of the heater electrode 27 are cut out, and the area of ​​each cross section is measured. Then, the average value of the cross-sectional areas of these four locations is calculated and given as the average cross-sectional area A1. 【0027】 The heater electrode 27 is generally formed by screen printing. If there is a difference between the printing direction and the stretching direction of the heater line 27c that constitutes the heater electrode 27, the printing thickness tends to vary. When there is variation in the printing thickness, it becomes difficult to heat the heater electrode 27 uniformly. For this reason, it is preferable to determine the stretching direction of the heater line so that the printing direction and the stretching direction of the heater line can be aligned as much as possible. 【0028】Specifically, when the plurality of heater electrodes 27 are virtually viewed in a plan view, it is preferable that, among the lengths of the heater lines 27c in at least one heater electrode 27 of the plurality of heater electrodes 27, 90% or more of the length portions are composed of a plurality of straight line portions within an angular range of 20° or less. More preferably, among the lengths of the heater lines 27c in at least one heater electrode 27 of the plurality of heater electrodes 27, 90% or more of the length portions are composed of a plurality of straight line portions within an angular range of 10° or less. Even more preferably, among the lengths of the heater lines 27c in at least one heater electrode 27 of the plurality of heater electrodes 27, 90% or more of the length portions are composed of a plurality of straight line portions within an angular range of 5° or less. 【0029】 Furthermore, when the plurality of heater electrodes 27 are virtually viewed in a plan view, it is preferable that, among the total lengths of all the heater lines 27c of the plurality of heater electrodes 27, 90% or more of the length portions are composed of a plurality of straight line portions within an angular range of 20° or less. More preferably, among the total lengths of all the heater lines 27c of the plurality of heater electrodes 27, 90% or more of the length portions are composed of a plurality of straight line portions within an angular range of 10° or less. Even more preferably, among the total lengths of all the heater lines 27c of the plurality of heater electrodes 27, 90% or more of the length portions are composed of a plurality of straight line portions within an angular range of 5° or less. 【0030】In one embodiment, when the plurality of heater electrodes 27 are virtually viewed in plan view, at least one of the plurality of heater electrodes 27, preferably more than half, more preferably 90% or more, and even more preferably all of the heater lines 27c in the heater electrodes 27 extend linearly such that a first straight line portion 27c1 extending in a first direction, a second straight line portion 27c2 connected to the first straight line portion 27c1 and extending in a second direction perpendicular to the first direction, a third straight line portion 27c3 connected to the second straight line portion 27c2 and extending in a direction opposite to the first direction, a fourth straight line portion 27c4 connected to the third straight line portion 27c3 and extending in a second direction perpendicular to the first direction, and a first straight line portion 27c1 connected to the fourth straight line portion 27c4 and extending in the first direction repeatedly appear from one end to the other end. 【0031】 Since the heater line 27c extends as described above, the heater line 27c moves away in the second direction from one end to the other end. Accordingly, the first connection portion 27a (+ side) and the second connection portion 27b (− side) do not adjacent to each other and can be arranged apart from each other. The first connection portion 27a (+ side) and the second connection portion 27b (− side) are each connection portions with vias, and the connection portions with vias may have weak heat generation. If portions with weak heat generation are close to each other, a cool spot will occur, so it is preferable to space them apart from each other to enhance heat uniformity. 【0032】 Specifically, the lower limit of the straight-line distance M from one end to the other end of the heater line 27c is preferably 5 mm or more, more preferably 10 mm or more, and even more preferably 20 mm or more. Although the upper limit of the straight-line distance M from one end to the other end of the heater line 27c is not particularly set, in order to arrange a large number of heater zones, it is preferably 50 mm or less, more preferably 40 mm or less, and even more preferably 30 mm or less. Accordingly, the straight-line distance M from one end to the other end of the heater line 27c is preferably, for example, 5 mm or more and 50 mm or less, more preferably 10 mm or more and 40 mm or less, and even more preferably 20 mm or more and 30 mm or less. 【0033】From the viewpoint of uniform heating, it is preferable that the distance between the via connection portions (27a, 27b) of adjacent heater electrodes 27 is also large. For example, the shortest distance between the via connection portions of adjacent heater electrodes 27 is preferably 3 mm or more, more preferably 5 mm or more, and even more preferably 10 mm or more. It is preferable that 30% or more of the total number of pairs of adjacent heater electrodes 27 satisfy the shortest distance condition, more preferably 50% or more of the pairs satisfy the shortest distance condition, and even more preferably 70% or more of the pairs satisfy the shortest distance condition. In order to align the direction in which the heater lines 27c of multiple heater electrodes 27 extend, some pairs of adjacent heater electrodes 27 may not satisfy the shortest distance condition. For example, the percentage of pairs that satisfy the shortest distance condition out of the total number of pairs of adjacent heater electrodes 27 is 30 to 95%, typically 50 to 90%, and more typically 70 to 90%. 【0034】 The heater electrode 27 can be formed from a mixed material, for example, a metal and a ceramic. The metal may contain one or more elements selected from, for example, W, Mo, and Ru. It is preferable that the thermal expansion coefficient is similar to that of the ceramic material constituting the ceramic substrate 20. It is preferable that the same material as the ceramic substrate 20 (e.g., alumina, aluminum nitride) is used as the ceramic. By forming the heater electrode 27 from such a mixed material, the risk of cracks forming between the heater electrode 27 and the ceramic substrate 20 due to the difference in thermal expansion between them can be reduced. 【0035】Since the jumper electrode 29a is planar, an advantage is obtained in that heat generation of the jumper electrode is suppressed as compared with the case where it is linear. That the jumper electrode 29a is planar means that the jumper electrode 29a extends in a plane direction parallel to the upper surface 21a of the ceramic substrate 20, and typically it can be flat (e.g., foil-like), but may have an uneven shape such as a mesh shape. The thickness of each planar jumper electrode 29a can be, for example, 10 to 100 μm, and typically can be 20 to 50 μm. 【0036】 The area (excluding the opening) of one planar jumper electrode 29a when viewed in plan is preferably 450 mm 2 or more, more preferably 700 mm 2 or more, and still more preferably 1400 mm 2 or more, for the reason of suppressing heat generation. Also, the area (excluding the opening) of one planar jumper electrode 29a when viewed in plan is preferably 15000 mm 2 or less, more preferably 7000 mm 2 or less, and still more preferably 4000 mm 2 or less, for the reason of simplifying electrode zoning. Therefore, the area (excluding the opening) of one planar jumper electrode 29a when viewed in plan is preferably, for example, 450 to 15000 mm 2 more preferably 700 to 7000 mm 2 and still more preferably 1400 to 4000 mm 2 【0037】 Referring to FIG. 4, the average cross-sectional area (average cross-section) A2 of a cross-section orthogonal to the energization direction (the direction from the connection point with the first via 61 to the connection point with the second via 62 in plan view) X of the planar jumper electrode 29a is not limited, but in order to suppress heat generation, it is preferable that the cross-sectional area is larger. On the other hand, if the cross-sectional area is too large, the cost of the electrode material becomes high. Therefore, it is preferably 0.1 to 3.0 mm 2 more preferably 0.2 to 1.5 mm 2 and still more preferably 0.4 to 0.8 mm2 It is even more preferable to do so. In this specification, the average cross-sectional area A2 of the planar jumper electrode 29a is measured by the following procedure. When the planar jumper electrode 29a to be measured is viewed from above, the average value of the width in the direction perpendicular to the current direction X is calculated in the region from the center of the connection point with the first via 61 to the center of the connection point with the second via 62 (see the hatched area in Figure 4). The thickness of the planar jumper electrode 29a in the said region is also determined. The thickness is measured by the following procedure. The planar jumper electrode 29a is cut by a cutting line perpendicular to the current direction X that bisects the distance from the center of the connection point with the first via 61 to the center of the connection point with the second via 62, and the thickness at the center of the width direction of the obtained cross section is taken as the measured value. The average value of the width in the direction perpendicular to the current direction X is multiplied by the thickness of the planar jumper electrode 29a to obtain the average cross-sectional area A2. 【0038】 Each of the multiple heater electrodes 27 preferably satisfies the following equation 1: A2 / A1≧10 ...Equation 1 (wherein A1 represents the average cross-sectional area of ​​the cross section perpendicular to the current-carrying direction of the heater electrode 27, and A2 represents the average cross-sectional area of ​​the cross section perpendicular to the current-carrying direction of the planar jumper electrode 29a). By satisfying the above relationship, the electrical resistance of the planar jumper electrode 29a can be made relatively small with respect to the heater electrode 27, which makes it easier to control the potential difference generated in the heater electrode 27, improves temperature controllability, and has the advantage of suppressing heat generation from the planar jumper electrode 29a. From the viewpoint of improving temperature controllability, it is more preferable to satisfy A2 / A1≧50, and even more preferable to satisfy A2 / A1≧100. 【0039】 On the other hand, from the viewpoint of reducing manufacturing costs by minimizing the amount of electrode material used, it is preferable that 30000 ≥ A2 / A1 be satisfied, more preferably that 3000 ≥ A2 / A1 be satisfied, and even more preferably that 800 ≥ A2 / A1 be satisfied. 【0040】Therefore, from the viewpoint of achieving both temperature controllability and manufacturing cost, it is preferable to satisfy 30000 ≥ A2 / A1 ≥ 10, more preferably 3000 ≥ A2 / A1 ≥ 50, and even more preferably 800 ≥ A2 / A1 ≥ 100. 【0041】 In each jumper electrode layer 29 of the jumper electrode layers 29 connected to the multiple terminals 52a constituting the terminal cluster 52 within each single section 55, adjacent planar jumper electrodes 29a can be electrically isolated from each other via a linearly extending insulator 29b (e.g., ceramics). As the insulator 29b, for example, ceramics (alumina and / or aluminum nitride, etc.) that make up the ceramic substrate 20 can be used. However, the insulator 29b may be of a different type of ceramic than the ceramics that make up the ceramic substrate 20. 【0042】In each single section 55, at least one of the one or more jumper electrode layers 29, preferably more than half of the jumper electrode layers 29, and more preferably all of the planar jumper electrodes 29a constituting the terminal cluster 52, is connected to a plurality of terminals 52a. Preferably, the spacing D (i.e., the line width of the linearly extending insulator 29b) between adjacent planar jumper electrodes 29a within the same layer is 0.1 mm or more, more preferably 0.2 mm or more, and even more preferably 0.3 mm or more (see Figure 4). This reduces the risk of adjacent planar jumper electrodes 29a being electrically connected and causing malfunctions. On the other hand, from the viewpoint of reducing the risk of increased heat generation due to a narrower width of the planar jumper electrodes 29a, the spacing D is preferably 2 mm or less, more preferably 1.5 mm or less, and even more preferably 1 mm or less. Therefore, in each single section 55, at least one of the jumper electrode layers 29, preferably more than half of the jumper electrode layers 29, and more preferably all of the jumper electrode layers 29, that are connected to the multiple terminals constituting the terminal cluster 52, preferably the spacing D between adjacent planar jumper electrodes 29a within the same layer is 0.1 to 2 mm, more preferably 0.2 to 1.5 mm, and even more preferably 0.3 to 1 mm. 【0043】The linearly extending insulator 29b is positioned so as not to overlap vertically with any linear portion of the heater line 27c of at least one of the multiple heater electrodes 27. By ensuring that the linearly extending insulator 29b and the heater line 27c do not overlap vertically, the occurrence of cracks during firing shrinkage that occurs during the manufacturing process of the ceramic substrate 20 is suppressed. Preferably, the linearly extending insulator 29b is positioned so as not to overlap vertically with any linear portion of the heater line 27c of more than half of the multiple heater electrodes 27. Preferably, the linearly extending insulator 29b is positioned so as not to overlap vertically with any linear portion of the heater line 27c of all of the multiple heater electrodes 27. 【0044】 In this specification, the statement that the linearly extending insulator 29b does not linearly overlap any straight portion of the heater line 27c in the vertical direction means that, when the heater electrode 27 is viewed virtually from above, the direction of extension of the linearly extending insulator 29b does not coincide with the direction of extension of any straight portion of the heater line 27c, or even if they coincide, they are shifted horizontally, so that there is no linear overlap in the vertical direction. It is acceptable for the two to intersect, resulting in partial point-like overlaps in the vertical direction when the heater electrode 27 is viewed virtually from above. 【0045】 Furthermore, it is preferable that the linearly extending insulators 29b do not overlap linearly in the vertical direction with any other linearly extending insulators 29b in different jumper electrode layers 29. Figure 7 shows a schematic diagram of a hypothetical top-down view of the multiple planar jumper electrodes 29a constituting the five jumper electrode layers 29 illustrated in Figure 5. This further reduces the risk of cracks occurring in the ceramic substrate 20. 【0046】Referring to Figure 2, each of the multiple terminals 52a arranged in the terminal cluster 52 is electrically connected to a predetermined planar jumper electrode 29a via a first via 61 extending in the vertical direction. One terminal 52a may be electrically connected to multiple planar jumper electrodes 29a, or multiple terminals 52a may be electrically connected to one planar jumper electrode 29a. In a preferred embodiment, each terminal 52a is connected to a predetermined planar jumper electrode 29a. 【0047】 Each terminal 52a can be fixed to the ceramic substrate 20, for example, by brazing. Furthermore, each terminal 52a of the terminal cluster 52 can be connected to a power supply member (not shown) connected to the heater power supply. There are no particular restrictions on the terminals 52a, but they can be, for example, rigid rods extending vertically, or flexible wires. 【0048】 The average cross-sectional area A3 of the first via 61 perpendicular to the direction of current flow is not limited, but is generally between 0.002 and 0.2 mm² due to reasons such as resistance increasing and generating heat if the cross-sectional area is too small, and insufficient insulation distance between electrodes if the cross-sectional area is too large. 2 Preferably, 0.008 to 0.1 mm 2 It is more preferable to do so, 0.016 to 0.05 mm 2 It is even more preferable to do so. In this specification, the average cross-sectional area A3 of the first via 61 is measured by the following procedure. The first via 61 to be measured is cut at three length positions at 20%, 50%, and 80% of the total length in the direction of current flow (vertical direction), and a cross section perpendicular to the direction of current flow of the first via 61 is cut out, and the area of ​​each cross section is measured. Then, the average value of these three cross-sectional areas is calculated and given as the average cross-sectional area A3. 【0049】Each of the multiple heater electrodes 27 is preferably electrically connected to the heater electrode 27 via a predetermined planar jumper electrode 29a through a first via 61, and satisfies the following equation 2: A3 / A1≧5 ...Equation 2 (wherein A1 represents the average cross-sectional area of ​​the section perpendicular to the current-carrying direction of the heater electrode 27, and A3 represents the average cross-sectional area of ​​the section perpendicular to the current-carrying direction of the first via 61). 【0050】 By satisfying the above relationship, the electrical resistance of the first via 61 can be made relatively small with respect to the heater electrode 27, which makes it easier to control the potential difference generated at the heater electrode 27, improves temperature controllability, and has the advantage of suppressing heat generation from the first via 61. From the viewpoint of improving temperature controllability, it is more preferable to satisfy A3 / A1≧7, and even more preferable to satisfy A3 / A1≧10. 【0051】 On the other hand, from the viewpoint of reducing the risk of defects due to insufficient insulation distance between the first vias 61, it is preferable to satisfy 2000 ≥ A3 / A1, more preferably 200 ≥ A3 / A1, and even more preferably 50 ≥ A3 / A1. 【0052】 Therefore, from the viewpoint of achieving both temperature controllability and mass production capability, it is preferable to satisfy 2000 ≥ A3 / A1 ≥ 5, more preferably 200 ≥ A3 / A1 ≥ 7, and even more preferably 50 ≥ A3 / A1 ≥ 10. 【0053】 Furthermore, each of the multiple planar jumper electrodes 29a is electrically connected via a second via 62 extending in the vertical direction to a first connection portion 27a of a predetermined heater electrode 27 selected from the multiple heater electrodes 27. 【0054】 The average cross-sectional area A4 of the cross-section perpendicular to the direction of current flow of the second via 62 is not limited, but is between 0.002 and 1 mm² due to reasons such as resistance increasing and generating heat if the cross-sectional area is too small, and the risk of damage due to the difference in thermal expansion between the electrode and the ceramic increasing if the cross-sectional area is too large. 2 Preferably, 0.008 to 0.3 mm 2It is more preferable to do so, with a range of 0.016 to 0.07 mm. 2 It is even more preferable to do so. In this specification, the average cross-sectional area A4 of the second via 62 is measured by the following procedure. The second via 62 to be measured is cut at three length positions at 20%, 50%, and 80% of the total length in the direction of current flow (vertical direction), and a cross section perpendicular to the direction of current flow of the second via 62 is cut out, and the area of ​​each cross section is measured. Then, the average value of these three cross-sectional areas is calculated and given as the average cross-sectional area A4. 【0055】 It is preferable that each of the multiple heater electrodes 27 is electrically connected to the heater electrode 27 by a second via 62 and satisfies the following equation 3: A4 / A1≧5 ...Equation 3 (wherein A1 represents the average cross-sectional area of ​​the section perpendicular to the direction of energization of the heater electrode 27, and A4 represents the average cross-sectional area of ​​the section perpendicular to the direction of energization of the second via 62). 【0056】 By satisfying the above relationship, the electrical resistance of the second via 62 can be made relatively small with respect to the heater electrode 27, which makes it easier to control the potential difference generated at the heater electrode 27, improves temperature controllability, and has the advantage of suppressing heat generation from the second via 62. From the viewpoint of improving temperature controllability, it is more preferable to satisfy A4 / A1≧7, and even more preferable to satisfy A4 / A1≧10. 【0057】 On the other hand, from the viewpoint of reducing the risk of damage due to the difference in thermal expansion between the electrode material of the second via 62 and the ceramics of the ceramic substrate 20, it is preferable that 10000 ≥ A4 / A1 be satisfied, more preferably that 600 ≥ A4 / A1 be satisfied, and even more preferably that 70 ≥ A4 / A1 be satisfied. 【0058】 Therefore, from the viewpoint of achieving both temperature controllability and mass production capability, it is preferable to satisfy 10000 ≥ A4 / A1 ≥ 5, more preferably 600 ≥ A4 / A1 ≥ 7, and even more preferably 70 ≥ A4 / A1 ≥ 10. 【0059】Each of the second connection portions 27b of the multiple heater electrodes 27 can be electrically connected to a common terminal 72 via a common jumper 71. The common terminal 72 can be connected to, for example, a ground (earth) wire. The common terminal 72 may also be connected to a heater power supply. The common jumper 71 can be electrically connected to the common terminal 72 via a third via 63 that extends in the vertical direction. 【0060】 The second connection portion 27b can be electrically connected to the common jumper 71 via a fourth via 64 that extends in the vertical direction. The average cross-sectional area A5 of the cross section perpendicular to the current-carrying direction (vertical direction) of the fourth via 64 is not limited, but is between 0.002 and 1 mm² because if the cross-sectional area is too small, the resistance will increase and heat will be generated, and if the cross-sectional area is too large, the risk of damage due to the difference in thermal expansion between the electrode and the ceramic increases. 2 Preferably, 0.008 to 0.3 mm 2 It is more preferable to do so, with a range of 0.016 to 0.07 mm. 2 It is even more preferable to do so. In this specification, the average cross-sectional area A5 of the fourth via 64 is measured by the following procedure. The fourth via 64 to be measured is cut at three length positions, 20%, 50%, and 80%, of the total length in the direction of current flow (vertical direction), and cross sections perpendicular to the direction of current flow of the fourth via 64 are cut out, and the area of ​​each cross section is measured. Then, the average value of these three cross-sectional areas is calculated and given as the average cross-sectional area A5. 【0061】 It is preferable that each of the multiple heater electrodes 27 is electrically connected to the heater electrode 27 by a fourth via 64 and satisfies the following equation 4: A5 / A1≧5 ...Equation 4 (wherein A1 represents the average cross-sectional area of ​​the section perpendicular to the direction of current flow of the heater electrode 27, and A5 represents the average cross-sectional area of ​​the section perpendicular to the direction of current flow of the fourth via 64). 【0062】By satisfying the above relationship, the electrical resistance of the fourth via 64 can be made relatively small with respect to the heater electrode 27, which makes it easier to control the potential difference generated at the heater electrode 27, improves temperature controllability, and has the advantage of suppressing heat generation from the fourth via 64. From the viewpoint of improving temperature controllability, it is more preferable to satisfy A5 / A1≧7, and even more preferable to satisfy A5 / A1≧10. 【0063】 On the other hand, from the viewpoint of reducing the risk of damage due to the difference in thermal expansion between the electrode of the fourth via 64 and the ceramic, it is preferable that 10000 ≥ A5 / A1 be satisfied, more preferably that 600 ≥ A5 / A1 be satisfied, and even more preferably that 70 ≥ A5 / A1 be satisfied. 【0064】 Therefore, from the viewpoint of achieving both temperature controllability and mass production capability, it is preferable to satisfy 10000 ≥ A5 / A1 ≥ 5, more preferably 600 ≥ A5 / A1 ≥ 7, and even more preferably 70 ≥ A5 / A1 ≥ 10. 【0065】 In the illustrated embodiment, the common terminal 72 is inserted into the ceramic substrate 20 and can be fixed by brazing. This configuration can increase the bonding strength of the common terminal 72. However, the common terminal 72 only needs to be electrically connected to the common jumper 71 and does not need to be inserted into the ceramic substrate 20. For example, the common terminal 72 may be fixed by brazing to the lower surface 23 of the ceramic substrate 20 or to the bottom surface of a recess 35 provided on the lower surface 23. 【0066】 The common jumper 71 can be formed at a different height from the jumper electrode layer 29 and the heater electrode 27 via the insulator 28. In the embodiment shown in Figure 1, the common jumper 71 is formed between the jumper electrode layer 29 and the heater electrode 27. The position of the common jumper 71 is not limited to this, and it can also be provided at a position above the heater electrode 27, for example. 【0067】A single common jumper 71 can electrically connect to all or some of the terminals of one or more terminal clusters 52. In one embodiment, all of the terminals of one terminal cluster 52 may be electrically connected to one common jumper 71. In another embodiment, some of the terminals of one terminal cluster 52 may be electrically connected to one common jumper 71, and the remaining terminals may be electrically connected to another common jumper 71. While a larger number of common jumpers 71 has the advantage of distributing the current and suppressing heat generation, it also has the disadvantage of increasing the number of common terminals 72, leading to increased costs and more complex wiring. Therefore, it is preferable for the semiconductor manufacturing equipment component 10 to have 1 to 5 common jumpers 71 in total, and more preferably 1 to 3 common jumpers 71. 【0068】 In a preferred embodiment, the common jumper 71 is planar. The planar shape of the common jumper 71 offers the advantage of reduced heat generation compared to a linear shape. The planar shape of the common jumper 71 means that it extends in a plane parallel to the upper surface 21a of the ceramic substrate 20. It can typically be flat (e.g., foil-like), but may also have a mesh-like or uneven shape. The thickness of the common jumper 71 can be, for example, 10 to 100 μm, and typically 30 to 80 μm. Furthermore, the area of ​​a single common jumper 71 when viewed from above (excluding the opening) is 3500 mm², for the purpose of reducing heat generation. 2 Preferably, it should be 7000 mm or more. 2 It is more preferable that the above be the case, and 14,000 mm 2 It is even more preferable that the above conditions are met. Furthermore, the area of ​​one common jumper 71 when viewed from above (excluding the opening) is 70,000 mm², for the purpose of simplifying electrode zoning. 2 Preferably, it is 40,000 mm 2 The following is more preferable. Therefore, the area (excluding the opening) of a single common jumper 71 when viewed from above is, for example, 3,500 to 70,000 mm². 2Preferably, it is 7,000 to 40,000 mm 2 It is more preferable that it be between 14,000 and 40,000 mm 2 It is even more preferable that this be the case. 【0069】 One common terminal 72 may be provided for each terminal cluster 52, or multiple common terminals 72 may be provided. However, from the viewpoint of suppressing heat generation due to current concentration at the common terminal, it is preferable to provide multiple common terminals 72 for each terminal cluster 52. 【0070】 In the illustrated embodiment, the common terminal 72 is provided in a recess 35 provided on the lower surface 23 of the ceramic substrate 20. The recess 35 is optional. The common terminal 72 can be joined to the ceramic substrate 20 by, for example, brazing or soldering. There are no particular restrictions on the common terminal 72, but it can be, for example, a rigid rod extending in the vertical direction or a flexible cable. 【0071】 The planar jumper electrode 29a and the common jumper 71 may contain one or more elements selected from W, Mo, and Ru, and can be formed from a mixed material of one or more elements selected from W, Mo, and Ru and ceramics. The first via 61, second via 62, third via 63, and fourth via 64 may contain one or more elements selected from W, Mo, and Ru, and can be formed from a mixed material of one or more elements selected from W, Mo, and Ru and ceramics. The terminal 52a and common terminal 72 can be formed from materials such as Mo, Kovar (Fe-Ni-Co alloy). 【0072】Since the current supplied through each terminal 52a concentrates in the third via 63, it is prone to overheating. Therefore, in order to suppress excessive overheating of the third via 63, it is preferable that the average cross-sectional area A6 of the cross section perpendicular to the direction of current flow of the third via 63 is larger than the average cross-sectional area A1 of any of the heater electrodes 27 electrically connected to the third via 63. The ratio of the average cross-sectional area A6 of the third via 63 to the average cross-sectional area A1 of the heater electrodes 27 can be set appropriately considering the current flowing through the third via 63, but as an example, it can be set to 50 ≤ A6 / A1 ≤ 2000, and typically, it can be set to 100 ≤ A6 / A1 ≤ 1000. Increasing the average cross-sectional area A6 of the third via also contributes to improving the temperature controllability by the heater electrodes. 【0073】 In this specification, the average cross-sectional area A6 of the third via 63 is measured by the following procedure: The third via 63 to be measured is cut at three points along its entire length in the direction of current flow (vertical direction): 20%, 50%, and 80%. Cross-sections perpendicular to the direction of current flow are cut out, and the area of ​​each cross-section is measured. The average of these three cross-sectional areas is then calculated to obtain the average cross-sectional area A6. 【0074】 The terminal cluster 52 is a portion in which multiple terminals 52a are arranged within a single section 55. In the embodiment shown in Figure 1, only one terminal cluster 52 is shown. Depending on the wiring for supplying power to the terminals, the ceramic substrate 20 may have multiple terminal clusters 52, i.e., multiple single sections 55. There is no particular limit to the number of terminals 52a arranged in the terminal cluster 52 within a single section 55, but exemplary it can be 10 to 100, and typically it can be 20 to 70. In the embodiment shown in Figure 1, the terminal cluster 52 is provided in a recess 34 provided on the lower surface 23 of the ceramic substrate 20, and the single section 55 is partitioned by the recess 34. The recess 34 is optional. 【0075】Referring to Figure 2, the single or multiple jumper electrode layers 29 electrically connect the multiple heater electrodes 27 to each terminal 52a of the terminal cluster 52 and are stacked vertically via an insulator 28. The distance between adjacent jumper electrode layers 29 in the vertical direction (equal to the thickness T of the insulator 28 between layers) is preferably 0.02 to 1 mm, more preferably 0.02 to 0.5 mm, and even more preferably 0.02 to 0.2 mm, balancing the need to ensure insulation between adjacent jumper electrode layers 29 in the vertical direction and to reduce manufacturing costs by making the ceramic substrate 20 thinner. 【0076】 As the number of jumper electrode layers 29 increases, the number of laminations increases, which raises manufacturing costs; therefore, it is desirable to have fewer jumper electrode layers 29. To reduce the number of jumper electrode layers 29, it is preferable that each jumper electrode layer 29 has multiple planar jumper electrodes 29a. For this reason, each jumper electrode layer 29 can be composed of multiple planar jumper electrodes 29a that are electrically separated via a linearly extending insulator 29b. 【0077】 While a larger number of planar jumper electrodes 29a in the same jumper electrode layer 29 helps to reduce the total number of jumper electrode layers 29, it is preferable not to have too many planar jumper electrodes 29a, as this increases heat generation when the width of each planar jumper electrode 29a is narrowed. Therefore, it is preferable that at least one of the one or more jumper electrode layers 29 electrically connected to the multiple terminals 52a constituting the terminal cluster 52 within each single section 55, preferably more than half of the jumper electrode layers 29, and more preferably all of the jumper electrode layers 29, each consist of 5 to 15 planar jumper electrodes 29a, and more preferably 8 to 12 planar jumper electrodes 29a. 【0078】Figure 5 shows examples of the shapes of multiple planar jumper electrodes 29a constituting each jumper electrode layer 29 from the first to the fifth layer, and an example of the shape of a common jumper, when the upper surface 21a, which is the wafer mounting surface of the ceramic substrate 20, is circular, there are three terminal clusters 52, and there are five jumper electrode layers 29. In the embodiment shown in Figure 5, the planar shape of one jumper electrode layer 29 that is electrically connected to multiple terminals 52a of one terminal cluster 52 is a substantially sector shape with the center of the circle formed by the upper surface 21a as the reference for the central angle. In the embodiment shown in Figure 5, three jumper electrode layers 29 are arranged at the same height position from the first to the fifth layer. Each of the three jumper electrode layers 29 is electrically connected to the corresponding terminal cluster 52. The three jumper electrode layers 29 at the same height position (same number) are arranged as a whole to correspond to the planar shape (circular in Figure 5) of the upper surface 21a, which is the wafer mounting surface. 【0079】 In the embodiment shown in Figure 5, the three jumper electrode layers 29 located at the same height (same number) are all substantially sector-shaped with substantially the same central angle (specifically, 120°) and are electrically isolated from each other via linearly extending insulators 29c (e.g., ceramics) along their radii. Preferably, the linearly extending insulators 29c that electrically isolate adjacent jumper electrode layers 29 do not overlap linearly in the vertical direction with any other linearly extending insulators 29c in different jumper electrode layers 29. Figure 7 shows a schematic diagram of a plurality of planar jumper electrodes constituting the five jumper electrode layers illustrated in Figure 5, viewed virtually from above. This reduces the risk of cracks occurring in the ceramic substrate 20. The line width of the linearly extending insulators 29c (equal to the distance between adjacent jumper electrode layers 29) is not limited, but can be, for example, 0.3 to 2 mm, and typically 0.3 to 1 mm. 【0080】Figure 6 shows a schematic plan view of each jumper electrode layer 29 from the first to the third layer as an example. Of the multiple jumper electrode layers 29 electrically connected to the multiple terminals 52a constituting the terminal cluster 52 within each single section 55, it is preferable that at least one jumper electrode layer 29, preferably more than half of the jumper electrode layers 29, and more preferably all of the jumper electrode layers 29, each of the multiple planar jumper electrodes 29a constituting the jumper electrode layers 29 has a planar shape in which two adjacent line segments are formed at the same angle with the position of the first via 61 as the vertex. Current tends to concentrate and generate heat in the vicinity of the first via 61, which extends vertically from the terminal cluster 52. Therefore, by spreading the planar jumper electrodes 29a at equal intervals, the advantage is obtained that heat can be easily dispersed. 【0081】 Referring to Figure 6, in the first and second jumper electrode layers 29, each of the 11 planar jumper electrodes 29a has a planar shape composed of two adjacent line segments at an angle of 32.7° (= 360° ÷ 11). In the third jumper electrode layer 29, each of the 10 planar jumper electrodes 29a has a planar shape composed of two adjacent line segments at an angle of 36° (= 360° ÷ 10). 【0082】 From the viewpoint of reducing manufacturing costs, the total number of layers A of the jumper electrode layer 29 is preferably 20 or less, more preferably 10 or less, and even more preferably 5 or less. On the other hand, from the viewpoint of increasing the number of heater electrodes and thus the number of zones, and thereby improving the performance of controlling the temperature distribution of the wafer, the total number of layers A of the jumper electrode layer 29 is preferably 2 or more, more preferably 3 or more, and even more preferably 4 or more. Therefore, the total number of layers A of the jumper electrode layer 29 is preferably, for example, 2 to 20, more preferably 3 to 10, and even more preferably 4 to 5. 【0083】(1-2. Base Plate) The base plate 30 can be, for example, disc-shaped. In one embodiment, the base plate 30 has a central portion 30a having a circular upper surface 31a in plan view, and a flange portion 30b on the outer circumference of the central portion 30a having an annular upper surface 31b in plan view. The thickness of the central portion 30a can be, for example, 5 to 30 mm. The flange portion 30b can be used to clamp or bolt the semiconductor manufacturing equipment member 10 to a mounting plate placed on the lower surface 33. A ring heater (not shown) can also be placed on the flange portion 30b. In this case, the ring heater can be bolted to the mounting plate. 【0084】 The base plate 30 can be made of, for example, a metallic material or a composite material of metal and ceramics. Examples of metallic materials include Al, Ti, Mo, or alloys thereof. Examples of composite materials of metal and ceramics include metal matrix composite materials (MMC) and ceramic matrix composite materials (CMC). Specific examples of such composite materials include materials containing Si, SiC, and Ti (also called SiSiCTi), materials in which Al and / or Si are impregnated into a porous SiC body, and composite materials of Al2O3 and TiC. A material in which Al is impregnated into a porous SiC body is called AlSiC, and a material in which Si is impregnated into a porous SiC body is called SiSiC. It is preferable to select a material for the base plate 30 that has a thermal expansion coefficient close to that of the ceramics constituting the ceramic substrate 20. For example, if the ceramic substrate 20 is made of alumina, it is preferable that the base plate 30 be made of SiSiCTi or AlSiC, which have a thermal expansion coefficient close to that of alumina. 【0085】 The base plate 30 can be used as an RF electrode by connecting it to an RF power supply via a power supply terminal (not shown). A high-pass filter (HPF) can be placed between the base plate 30 and the RF power supply. 【0086】A refrigerant flow path 32 may be formed inside the base plate 30 through which the refrigerant circulates. The refrigerant flowing through the refrigerant flow path 32 is preferably a liquid and preferably electrically insulating. Examples of electrically insulating liquids include fluorine-based inert liquids. The refrigerant flow path 32 can be formed, for example, in a single continuous line from one end (inlet) to the other end (outlet) across the entire base plate 30 in a plan view. A supply port and a recovery port of an external refrigerant device (not shown) are connected to one end and the other end of the refrigerant flow path 32, respectively. The refrigerant supplied from the supply port of the external refrigerant device to one end of the refrigerant flow path 32 passes through the refrigerant flow path 32, returns to the recovery port of the external refrigerant device from the other end of the refrigerant flow path 32, is temperature-adjusted, and then supplied again from the supply port to one end of the refrigerant flow path 32. 【0087】 (1-3. Bonding Layer) The bonding layer 40 joins the lower surface 23 of the ceramic substrate 20 and the upper surface 31a of the base plate 30. The bonding layer 40 may be composed of a metal layer formed of, for example, solder or metal brazing material. The bonding layer 40 is formed by, for example, TCB (Thermal Compression Bonding). TCB is a known method in which a metal bonding material is sandwiched between two members to be bonded, and the two members are pressed together while heated to a temperature below the solidus temperature of the metal bonding material. The bonding layer 40 is not limited to a metal layer. For example, a resin bonding layer may be used instead of a metal layer. The resin bonding layer can be composed of, for example, a cured product of a silicone resin adhesive, epoxy resin adhesive, acrylic resin adhesive, or urethane resin adhesive. 【0088】 The bonding layer 40 and the base plate 30 may have through holes in locations corresponding to the terminal cluster 52 in order to facilitate connection of the power supply member to each terminal 52a of the terminal cluster 52. In addition, the bonding layer 40 and the base plate 30 may have through holes in locations corresponding to the common terminal 72 in order to facilitate connection of the ground wire 73 to the common terminal 72. 【0089】(1-4. Others) The side surface of the outer peripheral portion 20b of the ceramic substrate 20, the outer peripheral portion of the bonding layer 40, the side surface of the base plate 30, and the upper surface 31b of the flange portion 30b can be covered with an insulating film 42. Examples of insulating films 42 include thermal spray films of alumina and yttria. 【0090】 In the above-described embodiment, the semiconductor manufacturing equipment member 10 may have a plurality of holes that penetrate the semiconductor manufacturing equipment member 10 in the vertical direction. Such holes include a plurality of gas holes opening on the upper surface 21a and lift pin holes for inserting lift pins to move the wafer W up and down on the upper surface 21a. Multiple gas holes can be provided at appropriate positions when the upper surface 21a is viewed from above. A heat-conducting gas such as He gas is supplied to the gas holes. Typically, the gas holes can be provided to open in areas of the upper surface 21a where the aforementioned seal bands and small protrusions are provided, but where the seal bands and small protrusions are not provided. When heat-conducting gas is supplied to the gas holes, the heat-conducting gas fills the space on the back side of the wafer W placed on the upper surface 21a. Plugs having gas flow paths may be embedded in the gas holes. Multiple lift pin holes can be provided at equal intervals along the concentric circles of the upper surface 21a when the upper surface 21a is viewed from above. 【0091】 <2. Method of Using Semiconductor Manufacturing Equipment Components> Next, a representative example of how to use the semiconductor manufacturing equipment component 10 will be described. The common terminal 72 of the semiconductor manufacturing equipment component 10 is connected to the ground via the ground wire 73. In addition, each terminal 52a of the terminal cluster 52 is connected to the heater power supply via a power supply component (not shown). In this state, when a voltage is applied from the heater power supply, current flows in the following order: each terminal 52a of the terminal cluster 52 → first via 61 → jumper electrode layer 29 → second via 62 → each heater electrode 27 → fourth via 64 → common jumper 71 → third via 63 → common terminal 72, causing each heater electrode 27 to heat up. By changing the voltage applied to each terminal 52a, it is possible to change the amount of heat generated by the zoned heater electrodes 27. This makes it possible to achieve a desired heat distribution on the ceramic substrate 20, so that, for example, the temperature distribution of the wafer W adsorbed and fixed on the upper surface 21a of the ceramic substrate 20 can be controlled. 【0092】 The method for adsorbing and fixing the wafer W will now be described. First, with the semiconductor manufacturing equipment component 10 installed in a chamber (not shown), the wafer W is placed on the upper surface 21a of the ceramic substrate 20. Then, the pressure inside the chamber is reduced using a vacuum pump to adjust it to a predetermined vacuum level, and a voltage is applied to the electrostatic adsorption electrode 26 to generate an electrostatic adsorption force, thereby adsorbing and fixing the wafer W to the upper surface 21a of the ceramic substrate 20. 【0093】 A method for processing wafer W will now be described. The chamber is set to a reaction gas atmosphere at a predetermined pressure (for example, several tens to several hundreds of Pa), and a plurality of zoned heater electrodes 27 are controlled so that the temperature distribution of wafer W, which is adsorbed and fixed to the upper surface 21a of the ceramic substrate 20, reaches a desired state. Then, a high-frequency voltage such as an RF voltage is applied between an upper electrode (not shown) provided on the ceiling of the chamber and the base plate 30 of the semiconductor manufacturing equipment component 10 to generate plasma. The surface of wafer W is processed by the generated plasma. 【0094】 <3. Method for Manufacturing Semiconductor Manufacturing Equipment Components> Next, a method for manufacturing the semiconductor manufacturing equipment component 10 will be explained exemplified. 【0095】 First, the method for manufacturing the ceramic substrate 20 will be explained. Multiple disc-shaped green sheets, which will serve as the basis for the ceramic substrate 20, are manufactured. The green sheets can be manufactured, for example, by tape molding. Grooves are formed on the lower surface of the first green sheet from the bottom layer at the locations where recesses 34 and 35 are to be provided. Through holes are also formed in the green sheet at positions corresponding to the first via 61, and conductive paste is filled into these through holes to form paste-filled sections. Furthermore, through holes are also formed at positions where the common terminal 72 will be inserted, if necessary. Next, conductive paste is printed on the upper surface of the green sheet to obtain the same pattern as the first jumper electrode layer 29, thereby forming the first jumper precursor layer. 【0096】For the second and subsequent (Nth) green sheets from the bottom layer, through holes are formed as needed at positions corresponding to the first via 61, second via 62, third via 63, and fourth via 64, and conductive paste is filled into these through holes to form paste-filled sections. Furthermore, through holes are formed as needed at positions where the common terminal 72 will be inserted. Next, conductive paste is printed on the upper surface of the green sheet in the same pattern as the jumper electrode layer 29, common jumper 71, or heater electrode 27 required in order from the bottom layer to form a jumper precursor or heater electrode precursor. The topmost green sheet can be used as is without processing. 【0097】 Screen printing is suitably used as a printing method for conductive paste. Furthermore, when screen printing the conductive paste for the heater electrode 27, the printing direction is preferably as close as possible to the direction in which the multiple straight portions of the heater electrode 27 extend (e.g., within 20°, preferably within 10°), and more preferably coincides with it. This increases the proportion in which the direction in which the heater lines 27c constituting the heater electrode 27 extend and the printing direction coincide, thereby suppressing variations in printing thickness. The semiconductor manufacturing apparatus component 10 according to the above embodiment has an advantage because a high proportion of the directions in which the heater lines 27c extend are aligned, and it is easy to align the direction in which the heater lines 27c extend with respect to the printing direction. 【0098】 Green sheets, each having undergone a predetermined processing, are stacked sequentially from the bottom to the top to form a laminate. A ceramic substrate 20 is obtained by firing this laminate. The electrostatic adsorption electrode 26 and vias (not shown) connected to the electrostatic adsorption electrode 26 can be formed inside the ceramic substrate 20 by conventional methods. 【0099】A base plate 30 and a metal bonding material are prepared separately from the ceramic substrate 20. The base plate 30 has a refrigerant flow path 32. Furthermore, the base plate 30 and the metal bonding material may have through holes for accessing the recesses 34 and 35 of the ceramic substrate 20. The base plate 30 with the refrigerant flow path 32 can be manufactured, for example, by joining multiple aluminum or MMC plate members, each having grooves or holes corresponding to the refrigerant flow path 32 formed by machining, using methods such as electron beam, welding, diffusion bonding, or TCB. The through holes can be formed by machining. 【0100】 Next, a resin or metal bonding material is sandwiched between the lower surface 23 of the ceramic substrate 20 and the upper surface 31a of the base plate 30 to form a laminate. Then, the laminate is pressed and bonded at a temperature below the solidus temperature of the metal bonding material (for example, between a temperature 20°C below the solidus temperature and the solidus temperature), and then returned to room temperature (TCB). As a result, the metal bonding material becomes a bonding layer 40, and a laminate is obtained in which the ceramic substrate 20 and the base plate 30 are bonded by the bonding layer 40. It is preferable to use a metal bonding material with a thickness of around 100 μm (e.g., 80 to 240 μm). 【0101】 Subsequently, the multiple terminals 52a constituting the terminal cluster 52 are connected to their respective first vias 61 by brazing or other methods. The common terminal 72 is also connected to the third via 63 by brazing or other methods. After that, the semiconductor manufacturing equipment component 10 is completed by going through appropriate processes such as shaping the overall form. 【0102】10: Semiconductor manufacturing equipment component 20: Ceramic substrate 20a: Central part 20b: Outer periphery 21a: Top surface 21b: Top surface 23: Bottom surface 26: Electrostatic adsorption electrode 27: Heater electrode 27a: First connection part 27b: Second connection part 27c: Heater line 27c1: First straight section 27c2: Second straight section 27c3: Third straight section 27c4: Fourth straight section 28: Insulator 29: Jumper electrode layer 29a: Jumper electrode 29b: Insulator 29c: Insulator 30: Base plate 30a: Central part 30b: Flange part 31a: Top surface 31b: Top surface 32: Refrigerant flow path 33: Bottom surface 34: Recess 35: Recess 40: Bonding layer 42: Insulating film 52: Terminal cluster 52a: Terminal 55: Single section 61: First via 62: Second via 63: Third via 64: Fourth via 71: Common jumper 72: Common terminal 73: Ground wire 78: Focus ring W: Wafer

Claims

1. A semiconductor manufacturing apparatus component comprising a ceramic substrate having a top surface on which a wafer can be placed, a terminal cluster portion in which a plurality of terminals are arranged within a single section, a plurality of zoned heater electrodes, and one or more jumper electrode layers disposed between the plurality of heater electrodes and each terminal of the terminal cluster portion and electrically connected to both, wherein each of the plurality of heater electrodes has a heater line extending in a direction parallel to the top surface of the ceramic substrate, and when the plurality of heater electrodes are viewed virtually from a planar perspective, 90% or more of the length of the heater line of at least one of the plurality of heater electrodes is composed of a plurality of straight sections with an angular range of 20° or less, and each jumper electrode layer is composed of a plurality of planar jumper electrodes electrically separated by a linearly extending insulator, and the linearly extending insulator does not linearly overlap any of the straight sections of the heater line of at least one of the heater electrodes in the vertical direction.

2. When the plurality of heater electrodes are viewed virtually from a planar perspective, 90% or more of the total length of all the heater lines of the plurality of heater electrodes is composed of a plurality of straight sections with an angular range of 20° or less, and the linearly extending insulator does not overlap any of the straight sections of all the heater lines in the vertical direction, as described in claim 1.

3. The semiconductor manufacturing apparatus member according to claim 1 or 2, wherein each of the plurality of heater electrodes is electrically connected to the heater electrode and satisfies the following equation 1: A2 / A1≧10 ...Equation 1 (wherein A1 represents the average cross-sectional area of ​​the cross section perpendicular to the direction of current flow of the heater electrode, and A2 represents the average cross-sectional area of ​​the cross section perpendicular to the direction of current flow of the planar jumper electrode).

4. Each of the plurality of terminals arranged in the terminal cluster is electrically connected to a predetermined planar jumper electrode via a first via extending in the vertical direction, and each of the plurality of heater electrodes is electrically connected to the heater electrode via the predetermined planar jumper electrode via the first via, and satisfies the following equation 2: A3 / A1≧5 ...Equation 2 (wherein A1 represents the average cross-sectional area of ​​the cross section perpendicular to the direction of current flow of the heater electrode, and A3 represents the average cross-sectional area of ​​the cross section perpendicular to the direction of current flow of the first via). A semiconductor manufacturing apparatus member according to claim 1 or 2.

5. Each of the plurality of planar jumper electrodes is electrically connected to a predetermined heater electrode selected from the plurality of heater electrodes via a second via extending in the vertical direction, and each of the plurality of heater electrodes is electrically connected to the second via and satisfies the following equation 3: A4 / A1≧5 ...Equation 3 (wherein A1 represents the average cross-sectional area of ​​the cross section perpendicular to the direction of current flow of the heater electrode, and A4 represents the average cross-sectional area of ​​the cross section perpendicular to the direction of current flow of the second via). A semiconductor manufacturing apparatus member according to claim 1 or 2.

6. The semiconductor manufacturing apparatus component according to claim 1 or 2, wherein the ceramic substrate has 10 or more zoned heater electrodes.

7. The semiconductor manufacturing apparatus component according to claim 1 or 2, wherein the ceramic substrate further comprises an electrode for electrostatic adsorption.

8. The semiconductor manufacturing apparatus component according to claim 1 or 2, wherein the ceramic constituting the ceramic substrate contains 90% by mass or more of alumina.

9. The component for semiconductor manufacturing apparatus according to claim 1 or 2, wherein the heater electrode contains one or more elements selected from W, Mo, and Ru.

10. The semiconductor manufacturing apparatus component according to claim 4, wherein the first via contains one or more elements selected from W, Mo, and Ru.

11. The semiconductor manufacturing apparatus component according to claim 5, wherein the second via contains one or more elements selected from W, Mo, and Ru.

12. When the plurality of heater electrodes are viewed virtually from a planar perspective, the heater line of at least one of the plurality of heater electrodes extends linearly such that the following repeats from one end to the other: a first linear portion extending in a first direction, a second linear portion connected to the first linear portion and extending in a second direction perpendicular to the first direction, a third linear portion connected to the second linear portion and extending in the opposite direction to the first direction, a fourth linear portion connected to the third linear portion and extending in a second direction perpendicular to the first direction, and a first linear portion connected to the fourth linear portion and extending in the first direction.

13. The semiconductor manufacturing apparatus component according to claim 12, wherein the straight-line distance from one end to the other end of the heater line is 5 mm or more.

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