Light-emitting device

Abstract

Disclosed is a light-emitting device comprising: a substrate; and a plurality of light-emitting units disposed on one surface of the substrate, wherein CIE (x, y) coordinate values of a first light emitted from one of the plurality of light-emitting units are different from CIE (x, y) coordinate values of a second light emitted from another light-emitting unit.

Description

light-emitting device

[0001] The present invention relates to a light-emitting device comprising a plurality of light-emitting parts.

[0002] A light-emitting diode (LED) is a light-emitting device that emits light when current is applied. Recently, light-emitting diodes are being used in various fields such as display devices, automotive lamps, and general lighting. Furthermore, light-emitting diodes have the advantages of a long lifespan, low power consumption, and fast response speed. By fully utilizing these advantages, they are rapidly replacing existing light sources. For example, a display device using light-emitting diodes can be obtained by forming structures of red (Red, R), green (Green, G), and blue (Blue, B) light-emitting diodes (LEDs) that are individually grown on a final substrate.

[0003] Specifically, the light-emitting diode is formed by growing epitaxial layers on a substrate and includes an N-type semiconductor layer, a P-type semiconductor layer, and an active layer interposed between them. An N-electrode pad is formed on the N-type semiconductor layer and a P-electrode pad is formed on the P-type semiconductor layer, so that the light-emitting diode is electrically connected to an external power source through the electrode pads and driven. At this time, current can flow from the P-electrode pad through the semiconductor layers to the N-electrode pad, and light generated through the recombination of electrons and holes in the active layer can be emitted.

[0004] The purpose of the present invention is to provide a light-emitting device capable of precisely realizing a desired target color coordinate by combining light-emitting elements having various color coordinates.

[0005] The purpose of the present invention is to provide a light-emitting device capable of realizing a uniform and precise target color.

[0006] The purpose of the present invention is to provide a light-emitting device capable of realizing high-quality colors corresponding to target color coordinates by combining and arranging light-emitting elements belonging to different color coordinate regions, without the need to select only those light-emitting elements belonging to a characteristic color coordinate region.

[0007] The purpose of the present invention is to provide a light-emitting device capable of improving color reproduction and chromatic aberration.

[0008] The purpose of the present invention is to provide a light-emitting device capable of increasing production efficiency by increasing manufacturing yield and reducing costs through a method of combining light-emitting elements having a wide range of color coordinates, thereby lowering dependence on light-emitting elements in a specific color coordinate range.

[0009] The purpose of the present invention is to provide a light-emitting device with excellent color quality by offsetting and averaging color deviations between light-emitting elements, thereby minimizing chromatic aberration and increasing color uniformity.

[0010] One embodiment of the present invention discloses a light-emitting device comprising a substrate and a plurality of light-emitting parts disposed on one surface of the substrate.

[0011] In one embodiment, the CIE (x, y) coordinate value of the first light emitted from one of the plurality of light-emitting parts may be different from the CIE (x, y) coordinate value of the second light emitted from another light-emitting part.

[0012] In one embodiment, the central coordinate value of the x-coordinate of the CIE (x, y) coordinate of the first light and the x-coordinate of the CIE (x, y) coordinate of the second light may be greater than the x-coordinate of the CIE (x, y) coordinate of the emitted light of the light-emitting device.

[0013] In one embodiment, the first light-emitting part that emits the first light and the second light-emitting part that emits the second light may be arranged adjacent to each other.

[0014] In one embodiment, the light-emitting part may be a light-emitting diode.

[0015] In one embodiment, the light-emitting part may be a light-emitting diode package.

[0016] In one embodiment, the light-emitting unit may include a base and a plurality of light sources disposed on the base.

[0017] In one embodiment, the light source may be a light-emitting diode.

[0018] In one embodiment, the light source may be a light-emitting diode package.

[0019] In one embodiment, the x-coordinate value of the CIE (x, y) coordinate of the third light emitted from one of the plurality of light-emitting units is smaller than the x-value of the CIE (x, y) coordinate of the first light, and the x-coordinate value of the CIE (x, y) coordinate of the fourth light emitted from one of the plurality of light-emitting units may be larger than the x-value of the CIE (x, y) coordinate of the second light.

[0020] In one embodiment, the first light-emitting unit emitting the first light and the second light-emitting unit emitting the second light are arranged adjacent to each other, and the third light-emitting unit emitting the third light and the fourth light-emitting unit emitting the fourth light may be arranged adjacent to each other.

[0021] In one embodiment, the second light-emitting part and the third light-emitting part may be arranged adjacent to each other.

[0022] In one embodiment, the distance between the second light-emitting part and the third light-emitting part may be greater than the distance between the first light-emitting part and the second light-emitting part.

[0023] Another embodiment of the present invention discloses a light-emitting device comprising a substrate and a plurality of light-emitting parts disposed on one surface of the substrate, wherein the first peak wavelength of a first light emitted from one of the plurality of light-emitting parts is different from the second peak wavelength of a second light emitted from another light-emitting part.

[0024] In one embodiment, the third peak wavelength of the third light emitted from another of the plurality of light-emitting parts is different from the first peak wavelength and the second peak wavelength, and the fourth peak wavelength of the fourth light emitted from another of the plurality of light-emitting parts may be different from the first peak wavelength to the third peak wavelength.

[0025] In one embodiment, the third peak wavelength may be longer than the first peak wavelength, and the fourth peak wavelength may be shorter than the second peak wavelength.

[0026] In one embodiment, the third peak wavelength may be longer than the first peak wavelength, and the fourth peak wavelength may be longer than the second peak wavelength.

[0027] Another embodiment of the present invention discloses a light-emitting device comprising a substrate and a plurality of light-emitting parts disposed on one surface of the substrate, wherein one of the plurality of light-emitting parts emits a first light having a first peak wavelength, another of the plurality of light-emitting parts emits a second light having a second peak wavelength, another of the plurality of light-emitting parts emits a third light having a third peak wavelength, and another of the plurality of light-emitting parts emits a fourth light having a fourth peak wavelength, wherein the third peak wavelength is longer than the first peak wavelength and shorter than the second peak wavelength.

[0028] In one embodiment, the fourth peak wavelength may be longer than the third peak wavelength and shorter than the second peak wavelength.

[0029] In one embodiment, the fourth peak wavelength may be longer than the second peak wavelength.

[0030] In one embodiment, the peak wavelength of the light emitted from the light-emitting device may be longer than the third peak wavelength.

[0031] The present invention can provide a light-emitting device capable of precisely realizing a desired target color coordinate by combining light-emitting elements having various color coordinates.

[0032] The present invention can provide a light-emitting device capable of realizing a uniform and precise target color.

[0033] The present invention can provide a light-emitting device capable of realizing high-quality colors corresponding to target color coordinates by combining and arranging light-emitting elements belonging to different color coordinate regions without the need to select only light-emitting elements belonging to a characteristic color coordinate region.

[0034] The present invention can provide a light-emitting device that has excellent color reproducibility and can improve chromatic aberration.

[0035] The present invention can provide a light-emitting device capable of increasing production efficiency by increasing manufacturing yield and reducing costs through a method of combining light-emitting elements having a wide range of color coordinates, thereby reducing dependence on light-emitting elements in a specific color coordinate range.

[0036] The present invention can provide a light-emitting device with excellent color quality by offsetting and averaging color deviations between light-emitting elements, thereby minimizing chromatic aberration and increasing color uniformity.

[0037] FIG. 1 is a cross-sectional view showing a light-emitting device according to one embodiment of the present invention.

[0038] FIG. 2 is a cross-sectional view showing a light-emitting device according to another embodiment of the present invention.

[0039] FIG. 3 is a drawing showing an example of a light-emitting part provided in the light-emitting device of the present invention.

[0040] FIG. 4 is a drawing showing another example of a light-emitting part provided in the light-emitting device of the present invention.

[0041] Figure 5 is a graph showing CIE color coordinates.

[0042] FIG. 6 is a graph illustrating an example of the emission spectrum of emitted light emitted from a light-emitting part provided in the light-emitting device of the present invention.

[0043] FIG. 7 is a graph illustrating another example of the emission spectrum of emitted light emitted from a light-emitting part provided in the light-emitting device of the present invention.

[0044] In the following description, numerous specific details are described for the purpose of explanation and to provide a complete understanding of the various embodiments or implementations of the present disclosure. As used herein, “Embodiments” and “Implementations” are interchangeable terms indicating non-limiting examples of devices or methods utilizing one or more of the concepts of the invention disclosed herein. However, it will be apparent that various embodiments may be implemented without utilizing these specific details or by utilizing one or more equivalent arrangements. In other examples, known structures and devices are illustrated in block diagram form to avoid unnecessarily obscuring the various embodiments. Furthermore, while various embodiments may differ from one another, they do not need to be exclusive. For example, specific shapes, configurations, and characteristics of an embodiment may be used or implemented in other embodiments without departing from the scope of the concept of the invention.

[0045] Unless otherwise specified, the illustrated embodiments should be understood as providing exemplary features of varying details in some ways in which the concept of the present invention can actually be realized. Therefore, unless otherwise specified, features, components, modules, layers, membranes, panels, regions and / or modes of various embodiments (hereinafter referred to individually or collectively as “elements”) may be combined, separated, interchanged, and / or rearranged differently without departing from the scope of the concept of the present invention.

[0046] The use of cross-hatching and / or shading in the attached drawings is generally provided to clarify the boundaries between adjacent elements. As such, the presence or absence of cross-hatching or shading, unless otherwise specified, does not imply or indicate any preference or requirement regarding the specific material, material properties, dimensions, proportions, commonalities between the exemplified elements, or any other features, attributes, and characteristics of the elements. Additionally, in the attached drawings, the size and relative size of the elements may be exaggerated for clarity and / or illustrative purposes. When embodiments are implemented differently, specific process sequences may be performed differently from the described order. For example, two consecutively described processes may be performed substantially simultaneously or in an order opposite to the described order. Also, the same reference numerals indicate the same elements.

[0047] When an element such as a layer is referred to as being "on", "connected to," or "coupled to" another element or layer, said element may be directly on, connected to, or coupled to the other element or layer, or an interposed element or layer may exist. However, when an element or layer is referred to as being "directly on", "directly connected to," or "directly coupled to" another element or layer, no interposed element or layer exists. To this end, the term "connected" may refer to a physical, electrical, and / or fluid connection with or without an interposed element. Furthermore, the DR1-axis, DR2-axis, and DR3-axis are not limited to the three axes of an orthogonal coordinate system, such as the x, y, and z axes, and may be interpreted in a broader sense. For example, the DR1-axis, DR2-axis, and DR3-axis may be perpendicular to each other, or they may represent different directions that are not perpendicular to each other. For the purposes of this disclosure, “one or more of X, Y, and Z” and “one or more selected from the group consisting of X, Y, and Z” may be interpreted as only X, only Y, only Z, or any combination of two or more of X, Y, and Z, such as, for example, XYZ, XYY, YZ, and ZZ. As used herein, the term “and / or” includes any and all combinations of one or more of the associated listed articles.

[0048] Although terms such as “first,” “second,” etc., may be used herein to describe various forms of elements, these elements shall not be limited by these terms. These terms are used to distinguish one element from another. Therefore, the first element discussed below may be named the second element without departing from the teachings of the present disclosure.

[0049] Spatially relative terms such as “below,” “under,” “immediately below,” “lower,” “above,” “upper,” “upper,” “higher,” and “side” (e.g., as in “side wall”) may be used for descriptive purposes and thereby to describe the relationship between one element and another element(s) as illustrated in the drawings. Spatially relative terms are intended to include different orientations of the device in use, operation, and / or manufacture in addition to the orientations illustrated in the drawings. For example, if the device in the drawings is inverted, the element described as “below” or “under” another element or feature will be oriented “above” the other element or feature. Therefore, the exemplary term “below” may include both upper and lower orientations. Additionally, the device may be oriented differently (e.g., rotated 90° or oriented in a different orientation), and thus, spatially relative descriptors used herein may also be interpreted accordingly.

[0050] The technical terms used in this specification are intended to describe specific embodiments and are not limiting. The singular form used in this specification also includes the plural form unless the context clearly indicates otherwise. Additionally, the terms “comprising,” “comprising,” “comprising,” and / or “comprising” used in this specification specify the presence of the mentioned features, integers, steps, operations, elements, components, and / or groups thereof, but do not exclude the presence or addition of one or more other features, integers, steps, operations, elements, components, and / or groups thereof. Furthermore, the terms “substantially,” “about,” and other similar terms used in this specification are used to indicate approximation rather than degree, and are used to describe inherent deviations of measured, calculated, and / or provided values ​​that may be recognized by a person of ordinary knowledge in the art.

[0051] Various embodiments are described below with reference to cross-sectional and / or exploded drawings, which are schematic examples of idealized embodiments and / or intermediate structures. As such, variations from the shapes in the drawings may be expected, for example, as a result of manufacturing techniques and / or tolerances. Therefore, the embodiments disclosed herein should not be interpreted as being limited to the shapes of specific illustrated regions, but should be interpreted to include, for example, variations in shape resulting from manufacturing. In this way, the regions illustrated in the drawings may be schematic in nature, and the shapes of these regions may not reflect the actual shapes of the regions of the device, and thus are not intended to have a limiting meaning.

[0052] As is customary in the art, some embodiments may be illustrated and described in the accompanying drawings in terms of functional blocks, units, and / or modules. Those skilled in the art will understand that these blocks, units, and / or modules are physically implemented by electronic (or optical) circuits, such as logic circuits, discrete components, microprocessors, wiring circuits, memory elements, and wiring connections, formed using semiconductor-based manufacturing technology or other manufacturing technology. Where blocks, units, and / or modules are implemented by microprocessors or other similar hardware, they may be programmed and controlled using software (e.g., microcode) to perform the various functions discussed herein, and may optionally be driven by firmware and / or software. Additionally, each block, unit, and / or module may be implemented by dedicated hardware, or as a combination of dedicated hardware for performing some functions and a processor for performing other functions (e.g., one or more programmed processors and associated circuits). Additionally, each of the blocks, units, and / or modules of some embodiments may be physically separated into two or more interacting and individual blocks, units, and / or modules without departing from the scope of the concept of the present invention. Additionally, the blocks, units, and / or modules of some embodiments may be physically combined into more complex blocks, units, and / or modules without departing from the scope of the concept of the present invention.

[0053] Unless otherwise defined, all terms used herein (including technical or scientific terms) have the same meaning as commonly understood by those skilled in the art to which this disclosure pertains. Terms such as those defined in commonly used dictionaries should be interpreted as having a meaning consistent with that meaning in the context of the relevant technology, and should not be interpreted in an ideal or overly formal sense unless explicitly defined in this specification.

[0054] Hereinafter, the light-emitting device of the present invention will be described in detail through the drawings.

[0055] FIG. 1 illustrates a part of a light-emitting device (100) according to one embodiment of the present invention, wherein the light-emitting device (100) may include a substrate (110) and a plurality of light-emitting parts (120a, 120b, 120c, 120d) disposed on one surface of the substrate (110).

[0056] The substrate (110) is configured to support a plurality of light-emitting parts (120a, 120b, 120c, 120d) and is not limited to a specific substrate. For example, the substrate (110) may be a printed circuit board including wiring.

[0057] The plurality of light-emitting parts (120a, 120b, 120c, 120d) may be disposed on one surface of the substrate (110). The plurality of light-emitting parts (120a, 120b, 120c, 120d) may be disposed spaced apart from each other.

[0058] For example, referring to FIG. 3, the light-emitting portions (120a, 120b, 120c, 120d) may include light-emitting diode elements. The light-emitting portions (120a, 120b, 120c, 120d) may include a semiconductor layer formed on a growth substrate (301).

[0059] Here, the growth substrate (301) is not limited to any substrate capable of growing or placing a semiconductor, and may include heterogeneous substrates such as, for example, a sapphire substrate, a silicon substrate, a silicon carbide substrate, or a spinel substrate, and may also include homogeneous substrates such as a gallium nitride substrate, an aluminum nitride substrate, etc. One surface of the growth substrate (301) may be patterned to form irregularities or protrusions (P). The growth substrate (301) may be removed after the semiconductor layer is formed.

[0060] The semiconductor layer may include a first conductivity type semiconductor layer (302), a second conductivity type semiconductor layer (303), and an active layer (304, 305, 306) disposed between the first conductivity type semiconductor layer (302) and the second conductivity type semiconductor layer (303).

[0061] The first conductivity semiconductor layer (302) may include a phosphide or nitride-based semiconductor such as (Al, Ga, In)P or (Al, Ga, In)N, and may be disposed on a growth substrate using a method such as MOCVD, MBE, HVPE, etc. As an example, the first conductivity semiconductor layer (302) is a nitride-based semiconductor layer doped with a first conductivity dopant, for instance, the first conductivity semiconductor layer (302) is an In-based semiconductor layer doped with Si as the first conductivity dopant. x Al y Ga (1-x-y) It can be formed into N layers (0≤x≤0, 0≤y≤1, 0≤x+y≤1).

[0062] Additionally, the first conductivity type semiconductor layer (302) may be doped as n-type by including one or more impurities such as Si, C, Ge, Sn, Te, Pb, etc. However, it is not limited thereto, and the first conductivity type semiconductor layer (302) may be doped as the opposite conductivity type by including a p-type dopant. The doping concentration of the first conductivity type dopant is 5×10 17 atoms / cm 3 Up to 5X10 19atoms / cm 3 It could be.

[0063] The first conductivity semiconductor layer (302) may be composed of a single layer or may include a plurality of layers. The first conductivity semiconductor layer (302) may further include a core layer and a buffer layer. Additionally, the first conductivity semiconductor layer (302) may further include a superlattice layer. The superlattice layer may be formed on top of the first conductivity semiconductor layer (302). Furthermore, the first conductivity semiconductor layer (302) may additionally include a contact layer, a modulation doping layer, an electron injection layer, etc.

[0064] The second conductivity semiconductor layer (303) may include a phosphide-based or nitride-based semiconductor such as (Al, Ga, In)P or (Al, Ga, In)N, and may be grown using techniques such as MOCVD, MBE, or HVPE. The second conductivity semiconductor layer (303) may be doped with a second conductivity dopant having a conductivity opposite to that of the first conductivity semiconductor layer (302). For example, the second conductivity semiconductor layer (303) may be doped to a p-type by including an impurity such as Mg. The second conductivity semiconductor layer (303) may be, for example, In x Al y Ga (1-x-y) N can be formed as (0≤x≤1, 0≤y≤1, 0≤x+y≤1).

[0065] In addition, the second conductivity type semiconductor layer (303) is p-In x Al y Ga (1-x-y)It may be composed of a single layer having a composition such as N (0≤x≤1, 0≤y≤1, 0≤x+y≤1) or may include multiple layers. Additionally, the second conductivity semiconductor layer (303) may further include a layer containing Al internally. Additionally, the second conductivity semiconductor layer (303) may further include a superlattice layer. Additionally, the second conductivity semiconductor layer (303) may further include a second conductivity contact layer.

[0066] The active layer (304, 305, 306) may be a light-emitting layer disposed between the first conductivity type semiconductor layer (302) and the second conductivity type semiconductor layer (303). The active layer (304, 305, 306) may be disposed on one surface of the first conductivity type semiconductor layer (302).

[0067] The above active layer (304, 305, 306) may include a phosphide or nitride semiconductor such as (Al, Ga, In)P or (Al, Ga, In)N and may be grown on one side of the first conductivity type semiconductor layer (302) using a technology such as MOCVD, MBE, or HVPE.

[0068] The active layer (304, 305, 306) may include a quantum well (QW) structure comprising at least two barrier layers (132) and at least one well layer (134). Alternatively, the active layer (304, 305, 306) may include a multi-quantum well (MQW) structure comprising alternating barrier layers and well layers. The multi-quantum well (MQW) structure may include a plurality of barrier layers and well layers arranged alternately. Adjacent barrier layers and well layers may form a pair. The active layer (304, 305, 306) may include a plurality of pairs.

[0069] The above well layer and barrier layer are, for example, Inx Al y Ga (1-x-y) It can be formed from a semiconductor material having a composition formula of N (0≤x≤1, 0≤y≤1, 0≤x+y≤1). For example, it may include at least one of InGaN / GaN, GaN / AlGaN, AlGaN / AlGaN, InGaN / AlGaN, or InGaN / InGaN.

[0070] The wavelength of light emitted from the active layer (304, 305, 306) can be controlled by controlling the composition ratio of the material constituting the well layer. The composition and thickness of the well layer can determine the wavelength of the generated light. In particular, by controlling the composition of the well layer, an active layer (304, 305, 306) that generates ultraviolet light, blue light, red light, or green light can be provided.

[0071] The first conductivity type semiconductor layer (302), active layer (304, 305, 306), and second conductivity type semiconductor layer (303) may be a semiconductor stack and a light-emitting structure that emits light having a preset peak wavelength. That is, the semiconductor stack may emit light such as blue, green, or red.

[0072] Specifically, a semiconductor stack emitting blue light has a dominant wavelength within the blue wavelength region, specifically between 440 nm and 480 nm. A semiconductor stack emitting green light has a wavelength within the green wavelength region, specifically between 480 nm and 580 nm. The peak wavelength of the green light may be shorter than the dominant wavelength. A semiconductor stack emitting red light has a dominant wavelength within the red wavelength region, specifically between 600 nm and 650 nm. The peak wavelength of the red light may be longer than the dominant wavelength.

[0073] The above active layers (304, 305, 306) may be provided in multiple numbers. FIG. 3 illustrates an example in which the semiconductor layer includes three first to third active layers (304, 305, 306), but the number of active layers (304, 305, 306) is not limited thereto.

[0074] The main wavelength of light emitted from each active layer (304, 305, 306) may be different. For example, the first active layer (304) may emit green light, the second active layer (305) may emit blue light, and the third active layer (306) may emit red light. Accordingly, the light emitted from the first to third active layers (304, 305, 306) may be mixed to emit white light.

[0075] The light-emitting portions (120a, 120b, 120c, 120d) may include a mesa structure in which a portion of the semiconductor layer is etched. A portion of the upper surface of the first conductive semiconductor layer (302) may be exposed around the mesa.

[0076] The light-emitting portions (120a, 120b, 120c, 120d) may include a first contact electrode (307) in contact with a first conductivity type semiconductor layer (302) and a second contact electrode (308) in contact with a second conductivity type semiconductor layer (303). The light-emitting portions (120a, 120b, 120c, 120d) are disposed on one surface of a substrate (110) and may be electrically connected to the substrate (110) through the first contact electrode (307) and the second contact electrode (308).

[0077] The structure of the light-emitting part (120a, 120b, 120c, 120d) of FIG. 3 is merely exemplary, and the present invention is not limited thereto.

[0078] As another example, referring to FIG. 4, the light-emitting parts (120a, 120b, 120c, 120d) may be light-emitting diode packages.

[0079] The above light-emitting diode package may include a frame (401) and a light-emitting diode element (402) mounted within the frame (401).

[0080] The above frame (401) forms the body of the light-emitting diode package and can physically support the light-emitting diode element (402) and protect it from the external environment. The above frame (401) can be formed from various insulating and heat-resistant materials, such as thermosetting resin, thermoplastic resin, ceramic, or metal.

[0081] A cavity (CV) formed in a concave shape may be provided on the upper part of the above frame (401). The cavity (CV) may form a space in which a light-emitting diode element (402) is placed. The inner surface of the cavity (CV) may be formed at an angle, which may form a reflective surface to efficiently reflect light generated from the light-emitting diode element (402) to the outside, thereby increasing light extraction efficiency. A high-reflectivity material such as silver (Ag) may be coated on the reflective surface.

[0082] A light-emitting diode element (402) that functions as a light source may be mounted on the bottom surface of the cavity (CV). The light-emitting diode element (402) may emit light having a specific peak wavelength (e.g., visible light or ultraviolet light) when current is applied. The light-emitting diode element (402) may be electrically and physically connected to a lead frame (not shown) within the frame (401) through bonding techniques such as die bonding or flip-chip bonding.

[0083] To realize light of a specific color coordinate, the interior of the cavity (CV) may be filled with an encapsulation material containing a wavelength conversion material. For example, when a light-emitting diode element (402) emits blue light, yellow phosphors or green and red phosphors included in the encapsulation material may absorb a portion of the blue light and convert it into longer wavelength light (yellow, green, and red light). The converted light and the remaining blue light that did not pass through the phosphors are mixed to finally emit white light or light having a specific color temperature outside the package.

[0084] By precisely controlling the type, concentration, and combination of phosphors used, each light-emitting part (120a, 120b, 120c, 120d) can emit light having specific CIE color coordinates (x, y).

[0085] Referring again to FIG. 1, the CIE (x, y) coordinate value of the first light emitted from one of the plurality of light-emitting parts (120a, 120b, 120c, 120d) may be different from the CIE (x, y) coordinate value of the second light emitted from another light-emitting part (120a, 120b, 120c, 120d). For example, the CIE (x, y) coordinate value of the first light may be smaller than the CIE (x, y) coordinate value of the second light.

[0086] Specifically, one of the plurality of light-emitting parts (120a, 120b, 120c, 120d) may be a first light-emitting part (120a) that emits a first light, and the other may be a second light-emitting part (120b) that emits a second light.

[0087] The first light-emitting unit (120a) emitting the first light and the second light-emitting unit (120b) emitting the second light can be arranged adjacent to each other.

[0088] The width (A1) of the first light-emitting part (120a) or the second light-emitting part (120b) may be smaller than the distance (A2) between the first light-emitting part (120a) and the second light-emitting part (120b).

[0089] FIG. 5 is a graph illustrating a CIE 1931 chromaticity diagram to explain the color coordinate distribution and combination of the light-emitting parts (120a, 120b, 120c, 120d) of the present invention. The horizontal axis of FIG. 5 represents the x-chromaticity coordinate, and the vertical axis represents the y-chromaticity coordinate. The curve k crossing the center is the Planckian Locus, which represents the color coordinates of light emitted by an ideal black body according to temperature.

[0090] The above blackbody locus can be used as a standard reference for white light. The lines marked 7000K, 6000K, ..., 2500K may be isothermal lines connecting points with the same color temperature (Correlated Color Temperature, CCT).

[0091] In the manufacturing process of light-emitting diodes (LEDs), due to minute differences in materials and process conditions, the color coordinates of each produced device may not precisely match the target point but may be distributed within a specific range. Therefore, a sorting process (binning) to classify the produced devices into several groups based on their color coordinates may be necessary.

[0092] Each region from R1 to R8 shown in FIG. 5 may represent an individual color coordinate bin defined by this binning process. For example, R1 may represent a group of light-emitting elements centered at a color temperature of about 7000K, R4 may represent a group centered at about 4000K, and R7 may represent a group centered at about 2700K. Points within each region (R1 to R8) (e.g., (x1, y1), (x2, y2), ..., (x8, y8)) may be the center color coordinates of the corresponding bin.

[0093] The CIE (x, y) color coordinates of the first light emitted from the first light-emitting unit (120a) and the CIE (x, y) color coordinates of the second light emitted from the second light-emitting unit (120b) may be located in different regions on the CIE 1931 chromaticity diagram. For example, the CIE (x, y) color coordinates of the first light may be located in the R3 region, and the CIE (x, y) color coordinates of the second light may be located in the R7 region.

[0094] The mixed light, which is a mixture of the first light and the second light, can be emitted as the emitted light of the light-emitting device (100). Accordingly, the CIE (x, y) color coordinates of the emitted light may have values ​​different from the CIE (x, y) color coordinates of the first light and the CIE (x, y) color coordinates of the second light.

[0095] The central coordinate value of the x-coordinate of the CIE (x, y) coordinate of the first light and the x-coordinate of the CIE (x, y) coordinate of the second light may be greater than the x-coordinate of the CIE (x, y) coordinate of the emitted light of the light-emitting device. Here, the central coordinate value of the x-coordinate may be the average value of the x-value of the CIE (x, y) coordinate of the first light and the x-value of the CIE (x, y) coordinate of the second light.

[0096] Alternatively, the central coordinate value of the y-coordinate of the CIE (x, y) coordinate of the first light and the y-coordinate of the CIE (x, y) coordinate of the second light may be greater than the x-coordinate of the CIE (x, y) coordinate of the emitted light of the light-emitting device. Here, the central coordinate value of the y-coordinate may be the average value of the y-value of the CIE (x, y) coordinate of the first light and the y-value of the CIE (x, y) coordinate of the second light.

[0097] Alternatively, the difference between the x-coordinate of the CIE (x, y) coordinate of the second light and the x-coordinate of the CIE (x, y) coordinate of the first light may be greater than the difference between the y-coordinate of the CIE (x, y) coordinate of the second light and the y-coordinate of the CIE (x, y) coordinate of the first light.

[0098] Alternatively, the difference between the x-coordinate of the CIE (x, y) coordinate of the light emitted by the light-emitting device and the x-coordinate of the CIE (x, y) coordinate of the first light may be smaller than the difference between the x-coordinate of the CIE (x, y) coordinate of the second light and the x-coordinate of the CIE (x, y) coordinate of the light emitted by the light-emitting device (100).

[0099] Alternatively, the difference between the y-coordinate of the CIE (x, y) coordinate of the light emitted by the light-emitting device and the y-coordinate of the CIE (x, y) coordinate of the first light may be smaller than the difference between the y-coordinate of the CIE (x, y) coordinate of the light emitted by the light-emitting device and the y-coordinate of the CIE (x, y) coordinate of the second light.

[0100] Alternatively, the difference between the y-coordinate and the x-coordinate of the CIE (x, y) coordinate of the first light may be smaller than the difference between the y-coordinate and the x-coordinate of the CIE (x, y) coordinate of the second light.

[0101] Specifically, when the CIE (x, y) color coordinates of the first light are (x3, y3) in the R3 region and the CIE (x, y) color coordinates of the second light are (x7, y7) in the R7 region, the CIE (x, y) color coordinates of the emitted light of the light-emitting device (100) may be located in the R5 region.

[0102] Let the CIE (x, y) color coordinates of the above-mentioned emission be (x5, y5). Then, the central coordinate value of x3 and x7, (x3+x7) / 2, can be greater than x5. ((x3+x7) / 2 > x5)

[0103] Alternatively, the median coordinate of y3 and y7, (y3+y7) / 2, can be greater than y5. ((y3+y7) / 2 > y5)

[0104] Alternatively, x7-x3 can have a greater value than y7-y3. (x7-x3 > y7-y3)

[0105] Alternatively, x5-x3 can have a value smaller than x7-x5 (x5-x3 < x7-x5).

[0106] Alternatively, y5-y3 can have a smaller value than y7-y5. (y5-y3 < y7-y5)

[0107] Alternatively, y3-x3 can have a value smaller than y7-x7. (y3-x3 < y7-x7)

[0108] That is, by arranging a plurality of light-emitting parts (120a, 120b, 120c, 120d) designed to have different color coordinates (e.g., (x3, y3) and (x7, y7)) on a single substrate (110), the CIE color coordinates of the entire light-emitting device (100) are prevented from deviating from the intended area, thereby controlling color uniformity and improving yield.

[0109] For example, the first light-emitting part (120a) has a CIE color coordinate (xa, ya) value of 0.205 <xa<0.495, 0.190<ya<0.450 범위 내의 값을 가질 수 있다. 제2 발광부(120b)은 CIE 색좌표 (xb, yb) 값이 0.205<xb<0.495, 0.190<yb<0.450 범위 내의 값을 가질 수 있다.

[0110] xa and xb have different values, and the absolute value of xa-xb can be greater than 0 and less than 0.290. At this time, the x-coordinate value of the CIE color coordinate of the emitted light from the light-emitting element (100) can have a value between xa and xb.

[0111] When the first and second light-emitting parts (120a, 120b) having different color coordinate CIE x-coordinate values ​​are lit together, the CIE x-coordinate value of the light emitted from the light-emitting device (100) is 0.205 <x<0.495 범위를 벗어나는 것을 방지할 수 있다.

[0112] Similarly, ya and yb have different values, and the absolute value of ya-yb can be greater than 0 and less than 0.260. At this time, the y-coordinate value of the CIE color coordinates of the emitted light from the light-emitting element (100) can have a value between ya and yb.

[0113] When the first and second light-emitting parts (120a, 120b) having different color coordinate CIE y-coordinate values ​​are lit together, the CIE y-coordinate value of the light emitted from the light-emitting device (100) is 0.109 <y<0.450 범위를 벗어나는 것을 방지할 수 있다.

[0114] The light-emitting device (100) may further include a third light-emitting unit (120c) that emits a third light and a fourth light-emitting unit (120d) that emits a fourth light. The CIE (x, y) coordinate values ​​of the third light may be different from the CIE (x, y) coordinate values ​​of the fourth light.

[0115] The x-coordinate value of the CIE (x, y) coordinate of the third light may be smaller than the x-value of the CIE (x, y) coordinate of the first light. The x-coordinate value of the CIE (x, y) coordinate of the fourth light may be larger than the x-value of the CIE (x, y) coordinate of the second light. The y-coordinate value of the CIE (x, y) coordinate of the third light may be smaller than the y-value of the CIE (x, y) coordinate of the first light. The y-coordinate value of the CIE (x, y) coordinate of the fourth light may be larger than the y-value of the CIE (x, y) coordinate of the second light. For example, the CIE (x, y) coordinate of the third light may be located in the R2 region, and the CIE (x, y) coordinate of the fourth light may be located in the R8 region.

[0116] Alternatively, the x-coordinate value of the CIE (x, y) coordinate of the third light may be greater than the x-value of the CIE (x, y) coordinate of the first light and smaller than the x-value of the CIE (x, y) coordinate of the second light. The x-coordinate value of the CIE (x, y) coordinate of the fourth light may also be greater than the x-value of the CIE (x, y) coordinate of the first light and smaller than the x-value of the CIE (x, y) coordinate of the second light. The y-coordinate value of the CIE (x, y) coordinate of the third light may be greater than the y-value of the CIE (x, y) coordinate of the first light and smaller than the y-value of the CIE (x, y) coordinate of the second light. The y-coordinate value of the CIE (x, y) coordinate of the fourth light may also be greater than the y-value of the CIE (x, y) coordinate of the first light and smaller than the y-value of the CIE (x, y) coordinate of the second light. For example, the CIE (x, y) coordinate of the third light may be located in the R4 region, and the CIE (x, y) coordinate of the fourth light may be located in the R6 region.

[0117] Alternatively, the x-coordinate value of the CIE (x, y) coordinate of the third light may be greater than the x-value of the CIE (x, y) coordinate of the first light and smaller than the x-value of the CIE (x, y) coordinate of the second light. The x-coordinate value of the CIE (x, y) coordinate of the fourth light may be greater than the x-value of the CIE (x, y) coordinate of the second light. The y-coordinate value of the CIE (x, y) coordinate of the third light may be greater than the y-value of the CIE (x, y) coordinate of the first light and smaller than the y-value of the CIE (x, y) coordinate of the second light. The y-coordinate value of the CIE (x, y) coordinate of the fourth light may be greater than the y-value of the CIE (x, y) coordinate of the second light. For example, the CIE (x, y) coordinates of the third light may be located in the R4 region, and the CIE (x, y) coordinates of the fourth light may be located in the R8 region. Accordingly, the CIE (x, y) coordinate value of the mixed light, which is a mixture of the first light and the second light, can be formed close to the CIE (x, y) coordinate value of the third light, and the CIE (x, y) coordinate value of the mixed light, which is a mixture of the third light and the fourth light, can be formed close to the CIE (x, y) coordinate value of the second light, thereby reducing the chromatic aberration of the light-emitting device (100).

[0118] The CIE (x, y) coordinates of the mixed light formed by mixing the third light and the fourth light may differ from the CIE (x, y) coordinates of the third light and the fourth light. For example, the CIE (x, y) coordinates of the mixed light may be located in the R5 region.

[0119] The third light-emitting part (120c) and the fourth light-emitting part (120d) may be arranged adjacently. Additionally, the second light-emitting part (120b) and the third light-emitting part (120c) may be arranged adjacently to each other.

[0120] The distance (A3) between the second light-emitting part (120b) and the third light-emitting part (120c) may be greater than the distance (A2) between the first light-emitting part (120a) and the second light-emitting part (120b).

[0121] The wavelength difference between the mixed light of the first light and the second light emitted from the first light-emitting unit (120a) and the mixed light of the third light and the fourth light emitted from the third light-emitting unit (120c) and the fourth light-emitting unit (120d) may be 20 nm or less.

[0122] FIG. 2 illustrates a part of a light-emitting device (200) according to another embodiment of the present invention, wherein the light-emitting device (200) may include a substrate (210) and a plurality of light-emitting parts disposed on one surface of the substrate (210).

[0123] The light-emitting unit may include a base (220) and a plurality of light sources (230a, 230b, 230c, 230d) disposed on the base (220).

[0124] The base (220) can be configured in various ways to support a plurality of light sources (230a, 230b, 230c, 230d) on one surface.

[0125] The light source (230a, 230b, 230c, 230d) may be a light-emitting diode. Alternatively, the light source (230a, 230b, 230c, 230d) may be a light-emitting diode package. For example, the light source (230a, 230b, 230c, 230d) may be configured to be identical or similar to the light-emitting part (120a, 120b, 120c, 120d) of the light-emitting device (100) of FIG. 1.

[0126] One of the plurality of light-emitting parts may include a first light source (230a) and a second light source (230b) disposed on the base (220). Another of the plurality of light-emitting parts may include a third light source (230c) and a fourth light source (230d) disposed on the base (220).

[0127] The first to fourth light sources (230a, 230b, 230c, 230d) may be configured to be identical or similar to the first to fourth light-emitting parts (120a, 120b, 120c, 120d) of the light-emitting device (100) of FIG. 1. Accordingly, the difference in CIE (x, y) coordinate values ​​of the light emitted from each light-emitting part can be reduced, thereby increasing the color coordinate uniformity between the light-emitting parts. Additionally, the probability that the CIE (x, y) coordinate values ​​of the light emitted from the light-emitting device (200) are placed in the Ansi step region can be increased.

[0128] In another embodiment of the present invention, referring again to FIG. 1, the first peak wavelength (W1) of a first light emitted from one of the plurality of light-emitting parts (120a, 120b, 120c, 120d) may be different from the second peak wavelength (W2) of a second light emitted from another light-emitting part (120a, 120b, 120c, 120d). Additionally, the third peak wavelength (W3) of a third light emitted from another of the plurality of light-emitting parts (120a, 120b, 120c, 120d) may be different from the first peak wavelength (W1) and the second peak wavelength (W2). Additionally, the fourth peak wavelength (W4) of the fourth light emitted from another of the plurality of light-emitting parts (120a, 120b, 120c, 120d) may be different from the first peak wavelength to the third peak wavelength (W1, W2, W3).

[0129] In the light-emitting device (100, 200) described above, the first light-emitting unit (120a) or the first light source (230a) emits a first light having a first peak wavelength (W1), the second light-emitting unit (120b) or the second light source (230b) emits a second light having a second peak wavelength (W2), the third light-emitting unit (120c) or the third light source (230c) emits a third light having a third peak wavelength (W3), and the fourth light-emitting unit (120d) or the fourth light source (230d) emits a fourth light having a fourth peak wavelength (W4).

[0130] For example, the dominant wavelengths of the first and second light emitted from the first and second light-emitting units (120a, 120b) may be different from each other. In this case, the wavelength difference between the first and second light wavelengths may be 20 nm or more. As another example, the first and second light-emitting units (120a, 120b) may emit white light, and the wavelength difference between the wavelengths may be 20 nm or less.

[0131] Referring to FIG. 6, the third peak wavelength (W3) may be longer than the first peak wavelength (W1) and shorter than the second peak wavelength (W2). The fourth peak wavelength (W4) may also be longer than the first peak wavelength (W1) and shorter than the second peak wavelength (W2). Additionally, the fourth peak wavelength (W4) may be longer than the third peak wavelength (W3). Accordingly, the difference between the average value of the peak wavelengths (W1, W2) of the first and second light and the average value of the peak wavelengths (W3, W4) of the third and fourth light can be reduced, thereby reducing the average wavelength deviation between the mixed light of the first and second light and the mixed light of the third and fourth light.

[0132] In contrast, the third peak wavelength (W3) may be shorter than the first peak wavelength (W1). The fourth peak wavelength (W4) may be longer than the second peak wavelength (W2). Accordingly, the difference between the average value of the peak wavelengths (W1, W2) of the first and second light and the average value of the peak wavelengths (W3, W4) of the third and fourth light can be reduced, thereby reducing the average wavelength deviation between the mixed light of the first and second light and the mixed light of the third and fourth light.

[0133] A mixed light in which the first to fourth lights are mixed may be emitted from the light-emitting device (100, 200), and the peak wavelength of the emitted light may be longer than the third peak wavelength (W3).

[0134] As another example, referring to FIG. 7, the third peak wavelength (W3) may be longer than the first peak wavelength (W1) and shorter than the second peak wavelength (W2). The fourth peak wavelength (W4) may be longer than the second peak wavelength (W2). Thus, the difference between the average value of the peak wavelengths (W1, W2) of the first and second light and the average value of the peak wavelengths (W3, W4) of the third and fourth light can be reduced, thereby reducing the average wavelength deviation between the mixed light of the first and second light and the mixed light of the third and fourth light.

[0135] Alternatively, the third peak wavelength (W3) may be shorter than the first peak wavelength (W1). The fourth peak wavelength (W4) may be longer than the first peak wavelength (W1) and shorter than the second peak wavelength (W2). Thus, by reducing the difference between the average value of the peak wavelengths (W1, W2) of the first and second light and the average value of the peak wavelengths (W3, W4) of the third and fourth light, the average wavelength deviation between the mixed light of the first and second light and the mixed light of the third and fourth light can be reduced.

[0136]

[0137] Although the present invention has been described above with reference to preferred embodiments, those skilled in the art or those with ordinary knowledge in the art will understand that various modifications and changes can be made to the invention without departing from the spirit and technical scope of the invention as described in the claims set forth below.

[0138] Therefore, the technical scope of the present invention should not be limited to the contents described in the detailed description of the specification, but should be determined by the claims.

Claims

1. A light-emitting device comprising a substrate and a plurality of light-emitting parts disposed on one surface of the substrate, A light-emitting device in which the CIE (x, y) coordinate value of a first light emitted from one of the plurality of light-emitting parts is different from the CIE (x, y) coordinate value of a second light emitted from another light-emitting part.

2. In Claim 1, A light-emitting device in which the x-coordinate of the CIE (x, y) coordinate of the first light and the x-coordinate of the CIE (x, y) coordinate of the second light are greater than the x-coordinate of the CIE (x, y) coordinate of the light emitted by the light-emitting device.

3. In Claim 1, A light-emitting device in which a first light-emitting part emitting the first light and a second light-emitting part emitting the second light are arranged adjacent to each other.

4. In Claim 1, The above-mentioned light-emitting part is a light-emitting diode, which is a light-emitting device.

5. In Claim 1, The above-mentioned light-emitting part is a light-emitting diode package, which is a light-emitting device.

6. In Claim 1, The above-mentioned light-emitting part is a light-emitting device comprising a base and a plurality of light sources disposed on the base.

7. In Claim 6, The above light source is a light-emitting device that is a light-emitting diode.

8. In Claim 6, The above light source is a light-emitting device that is a light-emitting diode package.

9. In Claim 1, The x-coordinate value of the CIE (x, y) coordinate of the third light emitted from one of the plurality of light-emitting parts is smaller than the x-value of the CIE (x, y) coordinate of the first light, and A light-emitting device in which the x-coordinate value of the CIE (x, y) coordinate of the fourth light emitted from one of the plurality of light-emitting parts is greater than the x-value of the CIE (x, y) coordinate of the second light.

10. In Claim 9, The first light-emitting part that emits the first light and the second light-emitting part that emits the second light are arranged adjacent to each other, and A light-emitting device in which a third light-emitting part emitting the third light and a fourth light-emitting part emitting the fourth light are arranged adjacent to each other.

11. In Claim 10, A light-emitting device in which the second light-emitting part and the third light-emitting part are arranged adjacent to each other.

12. In Claim 11, A light-emitting device in which the distance between the second light-emitting part and the third light-emitting part is greater than the distance between the first light-emitting part and the second light-emitting part.

13. A light-emitting device comprising a substrate and a plurality of light-emitting parts disposed on one surface of the substrate, A light-emitting device in which the first peak wavelength of a first light emitted from one of the plurality of light-emitting parts is different from the second peak wavelength of a second light emitted from another light-emitting part.

14. In Claim 13, The third peak wavelength of the third light emitted from another of the plurality of light-emitting parts is different from the first peak wavelength and the second peak wavelength, and A light-emitting device in which the fourth peak wavelength of the fourth light emitted from another of the plurality of light-emitting parts is different from the first peak wavelength to the third peak wavelength.

15. In Claim 14, The third peak wavelength is longer than the first peak wavelength, and The above-mentioned fourth peak wavelength is a light-emitting device shorter than the above-mentioned second peak wavelength.

16. In Claim 14, The third peak wavelength is longer than the first peak wavelength, and A light-emitting device in which the above-mentioned fourth peak wavelength is longer than the above-mentioned second peak wavelength.

17. A light-emitting device comprising a substrate and a plurality of light-emitting parts disposed on one surface of the substrate, One of the plurality of light-emitting parts emits a first light having a first peak wavelength, and Another one among the plurality of light-emitting parts emits a second light having a second peak wavelength, and Another of the plurality of light-emitting parts emits a third light having a third peak wavelength, and Another one of the above plurality of light-emitting parts emits a fourth light having a fourth peak wavelength, and A light-emitting device in which the third peak wavelength is longer than the first peak wavelength and shorter than the second peak wavelength.

18. In Claim 17, A light-emitting device in which the fourth peak wavelength is longer than the third peak wavelength and shorter than the second peak wavelength.

19. In Claim 17, A light-emitting device in which the above-mentioned fourth peak wavelength is longer than the above-mentioned second peak wavelength.

20. In Claim 17, A light-emitting device in which the peak wavelength of the light emitted from the above light-emitting device is longer than the third peak wavelength.

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