Wafer, wafer manufacturing method, and device manufacturing method
By evaluating and bonding substrates based on warping direction and using specific materials, the method addresses warping issues in composite wafers, achieving minimal warpage and improved manufacturing efficiency.
WO2026126296A1PCT designated stage Publication Date: 2026-06-18RESONAC CORP
Patent Information
- Authority / Receiving Office
- WO · WO
- Patent Type
- Applications
- Current Assignee / Owner
- RESONAC CORP
- Filing Date
- 2024-12-09
- Publication Date
- 2026-06-18
Smart Images
Figure JP2024043454_18062026_PF_FP_ABST
Abstract
This wafer comprises a single crystal layer and a crystal substrate bonded to the single crystal layer. In the wafer according to the present embodiment: when the film thickness ratio obtained by dividing the thickness of the single crystal layer by the thickness of the crystal substrate is 3% or more, the absolute value of a warpage value is 80 µm or less; and when said film thickness ratio is less than 3%, the absolute value of the warpage value is 50 µm or less. The warpage value is determined by, in an arbitrary straight line passing through the center of a first surface when the wafer is placed on a flat surface, subtracting the average value of the heights of a first point and a second point that are located 1 mm away from outer circumferential ends, from the height of the position at the center.
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