Substrate processing method and substrate processing system

WO2026126349A1PCT designated stage Publication Date: 2026-06-18TOKYO ELECTRON LTD
View PDF 0 Cites 0 Cited by

Patent Information

Authority / Receiving Office
WO · WO
Patent Type
Applications
Current Assignee / Owner
TOKYO ELECTRON LTD
Filing Date
2024-12-10
Publication Date
2026-06-18

AI Technical Summary

⚠Technical Problem

Existing methods struggle to efficiently separate and reuse semiconductor wafers while preserving the integrity of the device layer during the transfer process, often leading to misalignment and bonding defects due to wafer deformation and uneven surfaces.

⚗Method used

A method involving the formation of a laser absorption layer on one wafer surface, followed by irradiation with laser light to reduce bonding strength, combined with a transparent coating film on the opposite surface to enhance energy absorption and facilitate separation, allowing for the transfer of the device layer to another wafer while enabling reuse of the first wafer.

🎯Benefits of technology

This approach enables precise separation of wafers with minimal damage, reduces energy loss, and allows for the reuse of the first wafer, improving processing efficiency and reducing costs by minimizing the need for additional film removal processes.

✦ Generated by Eureka AI based on patent content.

Smart Images

  • Figure JP2024043682_18062026_PF_FP_ABST
    Figure JP2024043682_18062026_PF_FP_ABST
Patent Text Reader

Abstract

This substrate processing method includes: irradiating a laser absorption layer, which absorbs a laser beam of a predetermined wavelength, with the laser beam from a second surface side of a first substrate in a bonded substrate, in which a first surface of the first substrate and the surface of a second substrate are bonded to each other, the first substrate having the first surface and the second surface being a surface opposite to the first surface, the first surface having a laminated film including the laser absorption layer and a device layer formed thereon; and separating the first substrate from the second substrate in the bonded substrate to transfer the device layer from the first substrate to the second substrate.
Need to check novelty before this filing date? Find Prior Art