Scintillator panel and method for producing scintillator panel

Abstract

The present invention addresses the problem of providing a scintillator panel having high brightness and high sharpness, and a method for producing a scintillator panel. Proposed is a scintillator panel comprising a substrate, a partition wall that is formed on the substrate, and a phosphor that is filled into a space which is partitioned by the partition wall, wherein: an organic protective layer and a metal reflecting layer are laminated, in this order as viewed from the partition wall body side, on at least a surface of the partition wall with which the phosphor comes into contact; the organic protective layer is formed of a resin composition containing a polysiloxane; and condition (A) and condition (B) are satisfied. Condition (A) is that, relative to 100 mol% of the total repeating units, the polysiloxane contains 0.01-65 mol% of a structural unit that is derived from R'Si(OR")3 (where R' and R'' are each a monovalent hydrocarbon group and may be the same or different) and has, in the main chain thereof, an organosilane unit represented by R2SiO2 / 2 (where R is a monovalent hydrocarbon group). Condition (B) is that the organic protective layer does not include a compound having a polymerization initiation capability with respect to the polysiloxane.

Description

Scintillator panel and method for manufacturing a scintillator panel 【0001】 The present invention relates to a scintillator panel and a method for manufacturing a scintillator panel. 【0002】 Traditionally, film-based radiation imaging has been widely used in medical settings. However, because film-based radiation imaging is analog image information, digital radiation detectors such as flat-panel detectors (FPDs) have been developed in recent years. In indirect conversion FPDs, a scintillator panel is used to convert X-rays into visible light. A scintillator panel has a scintillator layer containing a radiophosphor, which emits visible light when irradiated with radiation. The scintillator panel converts the light emitted from the scintillator panel into an electrical signal using a sensor (photoelectric conversion layer) with thin-film transistors (TFTs) or charge-coupled devices (CCDs), thereby converting radiation information into digital image information. However, FPDs have a problem in that when the radiophosphor emits light, the visible light is scattered by the radiophosphor itself, reducing the sharpness of the image. 【0003】 Therefore, a multi-element solid-state radiation detector has been proposed (see, for example, Patent Document 1) that arranges multiple detection elements, each consisting of a scintillator that converts X-rays into light and a photodiode that converts the light into an electrical signal, and places metallic isolation plates between the detection elements to isolate adjacent detection elements, characterized in that both the front and back surfaces of the isolation plates are smoothed with a thin film mainly composed of organopolysiloxane, and then a reflective optical thin film is provided on the surface of the organopolysiloxane-based thin film to increase the light reflectivity. By using a metal thin film with a high radiation absorption coefficient as the material for the isolation plates, the efficiency of X-ray space utilization can be improved, and since light absorption can be suppressed by the reflective optical thin film, the efficiency of light transmission can be improved. 【0004】Furthermore, in order to reduce the effect of scattering of emitted light, a scintillator panel (see, for example, Patent Document 2) has been proposed, which has partitions and a phosphor layer in the cells partitioned by the partitions, wherein the partitions have a metal reflective layer and an organic protective layer mainly composed of polysiloxane, and the polysiloxane includes a hydrolysis / partial condensate of organosilane containing an organosilane of a specific structure, a substrate, a grid-like partition formed on the substrate, a phosphor layer in the cells partitioned by the partitions, and a reflective layer surrounding the side and bottom portions of the phosphor layer, wherein the reflective layer surrounding the side portions of the phosphor layer has a curved portion and a portion where the opposing surfaces of the reflective layer on the side portions of the phosphor layer are substantially parallel, and the ratio in the width direction of the curved portion to the flat portion of the reflective layer at the bottom of the phosphor layer is 10.0:0 to 1.0:9.0. By including polysiloxane in the aforementioned organic protective layer, it is possible to achieve high brightness and sharpness, and to suppress the occurrence of pinhole defects in high temperature and high humidity environments. 【0005】 However, in Patent Document 1, a metal material was used for the isolation plate, and changes in the operating temperature of the radiation detector caused dimensional changes in the isolation plate, making it impossible to obtain sufficient sharpness. In addition, in the process of forming the phosphor layer inside the isolation plate, the isolation plate warped due to heating and cracks occurred in the reflective multilayer optical thin film, resulting in insufficient brightness. 【0006】 On the other hand, the organic protective layers described in Patent Documents 2 and 3 contain cured products utilizing hydrolysis and partial condensation reactions of organosiloxanes, resulting in significant curing shrinkage, which causes cracks in the reflective layer and warping of the scintillator panel, leading to problems such as reduced brightness and sharpness. 【0007】 Japanese Patent Publication No. 5-45468, Japanese Patent Publication No. 2019-168348, International Publication No. 2022 / 138489 【0008】 Therefore, the present invention has been made in view of these conventional problems, and aims to provide a scintillator panel with high brightness and high sharpness, and a method for manufacturing a scintillator panel. 【0009】The present invention, which solves the above problems, mainly has the following configuration: [1] A scintillator panel having a substrate, a partition wall formed on the substrate, and a phosphor filled in the space partitioned by the partition wall, wherein at least the surface of the partition wall that is in contact with the phosphor has an organic protective layer and a metal reflective layer laminated in this order when viewed from the side of the partition wall body, the organic protective layer is formed of a resin composition containing polysiloxane, and the scintillator panel satisfies the following conditions (A) and (B). Condition (A): The polysiloxane is R ２ SiO ２ / ２ The main chain has organosilane units (D units) represented by (R is a monovalent hydrocarbon group), and in all repeating units, R'Si (OR'') ３The scintillator panel according to [1], wherein the R contained in the D unit is a monovalent hydrocarbon group (R' and R'' may be the same or different), and the content of the D unit contained is 0.01 mol% to 65 mol% when the total repeating units are 100 mol%. Condition (B): The organic protective layer does not contain any compounds that have polymerization initiation ability for the polysiloxane. [2] The scintillator panel according to [1], wherein each R contained in the D unit is independently a monovalent hydrocarbon group containing a functional group selected from the group consisting of a methyl group, a phenyl group, a cyclopentyl group, and a cyclohexyl group (however, they cannot be a methyl group at the same time). [3] The scintillator panel according to [1] or [2], wherein the R contained in the D unit is a phenyl group, and the content of the D unit contained in the polysiloxane is 30 mol% to 65 mol% with respect to 100 mol% of the total organosilane units. [4] The scintillator panel according to any one of [1] to [3], wherein the polysiloxane has a vinyl group. [5] The scintillator panel according to any one of [1] to [4], wherein the thickness of the organic protective layer is 0.05 μm or more and 1.0 μm or less. [6] The scintillator panel according to any one of [1] to [5], wherein the partition body is made of polyimide or a cured product of a resin composition mainly composed of an epoxy compound or an oxetane compound. [7] A method for manufacturing a scintillator panel, comprising the steps of preparing a substrate, forming a partition body on the substrate, laminating at least an organic protective layer and a metal reflective layer on the partition body to form a partition, and filling the space partitioned by the partition with a phosphor, wherein the organic protective layer is formed of a resin composition containing polysiloxane and satisfies the following conditions (A) and (B), and the organic protective layer and the metal reflective layer satisfy the following condition (C). Condition (A): The polysiloxane is R ２ SiO ２ / ２ The main chain has organosilane units (D units) represented by (R is a monovalent hydrocarbon group), and in all repeating units, R'Si (OR'') ３A structural unit derived from (R' and R" may be the same or different monovalent hydrocarbon groups) is contained in an amount of 0.01 mol% or more and 65 mol% or less when the total repeating units are 100 mol%. Condition (B): The organic protective layer does not contain a compound having a polymerization initiation ability with respect to the polysiloxane. Condition (C): The organic protective layer and the metal reflective layer are such that the organic protective layer is present between the partition wall body and the metal reflective layer and is formed on at least the surface of the partition wall in contact with the phosphor. 【0010】 According to the present invention, it is possible to provide a scintillator panel having high brightness and high sharpness and a method for manufacturing the scintillator panel. Preferably, it is also possible to provide a scintillator panel having high luminance stability and a method for manufacturing the scintillator panel. 【0011】 An enlarged cross-sectional view of the portion surrounded by a broken line in FIG. 1, which schematically shows a member for a radiation detector including a scintillator panel 【0012】 The scintillator panel of the present invention is a scintillator panel having a substrate, partition walls formed on the substrate, and a phosphor filled in a space partitioned by the partition walls, wherein an organic protective layer and a metal reflective layer are laminated in this order on at least the surface of the partition wall in contact with the phosphor as viewed from the side of the partition wall body, and the organic protective layer is formed of a resin composition containing polysiloxane and satisfies the following conditions (A) and condition (B). Condition (A): The polysiloxane has a main chain composed of an organosilane unit represented by R ２ SiO ２ / ２ (R is a monovalent hydrocarbon group) (such an organosilane unit may be hereinafter referred to as a "D unit"), and in all repeating units, R'Si(OR") ３ (R' and R" are each independently a monovalent hydrocarbon group) (such an organosilane unit may be hereinafter referred to as a "T unit") is contained in an amount of 0.01 mol% or more and 65 mol% or less when the total repeating units are 100 mol%. Condition (B): The organic protective layer does not contain a compound having a polymerization initiation ability with respect to the polysiloxane. 【0013】The specific configuration of a scintillator panel according to one embodiment of the present invention will be described below with reference to the drawings. Figure 1 is a schematic cross-sectional view of a radiation detector member including a scintillator panel according to one embodiment of the present invention, and Figure 2 is an enlarged cross-sectional view of the partition wall portion of the scintillator panel. The radiation detector member 3 includes a scintillator panel 4 and an output substrate 5. The scintillator panel 4 includes a substrate 2, partition walls formed on the substrate, and a scintillator layer 6 having a phosphor 16 and a binder resin 15 in cells partitioned by the partition walls. In this example, the partition wall includes a partition wall body 1, an organic protective layer 11, a metal reflective layer 12, an inorganic protective layer 13, and a surface protective layer 14. The inorganic protective layer and the surface protective layer are preferably configured as described later. The output substrate 5 includes a substrate 10, an output layer 9 formed on the substrate, and a photoelectric conversion layer 8 having a photodiode formed on the output layer. A diaphragm layer 7 may be provided on the photoelectric conversion layer. Preferably, the light-emitting surface of the scintillator panel 4 and the photoelectric conversion layer 8 of the output substrate 5 are bonded or in close contact via a diaphragm layer 7. The light emitted by the scintillator layer 6 reaches the photoelectric conversion layer 8, is photoelectrically converted, and output. Each of these will be explained below. 【0014】(Substrate) Examples of materials that constitute the substrate of the scintillator panel of the present invention include metals, plastics, glass, and ceramics. Examples of metals include aluminum (including aluminum alloys), zinc, copper, iron, silicon, silicon carbide, gallium nitride, aluminum nitride nitrides, and gallium arsenide. The substrate surface may be plated with chromium-based, copper-based, nickel-based, or ceramic treatments. Examples of plastics include cellulose acetate, polyethylene terephthalate (PET), polyethylene, polyester, polyamide, polyimide, polyphenylene sulfide, polystyrene, polypropylene, polycarbonate, polyvinyl acetal, aramid, silicone, polyolefin, copolymer of tetrafluoroethylene and ethylene (ETFE), α-polyolefin resin, polycaprolactone resin, acrylic resin, silicone resin, and copolymer resins of these with ethylene, as well as composite materials in which the plastic surface is laminated or vapor-deposited with the metal. 【0015】 The substrate used in the scintillator panel of the present invention is preferably radiotransparent, and for example, those exemplified as materials constituting the substrate in International Publication No. 2021 / 200327 are preferred. Among these, glass plates and plastic films are preferred from the viewpoint of adhesion to the partition wall, and as plastics, polyesters such as polyethylene terephthalate and polyethylene naphthalate, polyamides, and polyimides are particularly preferred. 【0016】 The substrate thickness is preferably 3.0 mm or less. The substrate thickness can be calculated by cutting a cross-section of the substrate using a microtome, observing 10 points on each section using a scanning electron microscope (for example, Hitachi S-4800 field emission scanning electron microscope). 【0017】(Partition Walls) Partition walls are provided to form partitioned spaces (cells). Therefore, by matching the size and pitch of the pixels of the photoelectric conversion layer arranged in a grid on the output substrate with the size and pitch of the cells of the scintillator panel, high-resolution X-ray images can be obtained. Each partition wall comprises at least a partition wall body responsible for forming cells, an organic protective layer laminated on the partition wall body, and a metal reflective layer. 【0018】 The material constituting the partition wall body is preferably one that can form a partition wall with high strength and heat resistance, such as inorganic materials or polymer materials. In particular, from the viewpoint of flatness of the side surface of the partition wall body and processability, it is preferable that the main component be a polymer material. Here, "main component is a polymer material" means that 50 to 100% by mass of the material constituting the partition wall body is a polymer material. 【0019】 Inorganic materials are compounds composed of elements other than carbon. However, some simple carbon compounds (such as graphite or allotropes of carbon like diamond) are included in the definition of inorganic materials. 【0020】 When the material constituting the partition body is made of inorganic materials, it is preferable that glass be the main component. Glass refers to an inorganic amorphous solid containing silicate. When the main component of the partition body is glass, the strength, durability, and heat resistance of the partition are increased, and deformation and damage are less likely to occur during the metal reflective layer formation process and the phosphor filling process. It should be noted that "made of inorganic materials" does not strictly mean that the presence of non-inorganic components is excluded, and the presence of non-inorganic components such as impurities contained in the inorganic raw materials themselves, or impurities mixed in during the manufacturing process of the partition body, is permissible. Furthermore, "mainly composed of glass" means that 50 to 100% by mass of the material constituting the partition body is glass. 【0021】In particular, the proportion of low-softening-point glass, which is glass with a softening point of 650°C or lower, in the partition wall body is preferably 95% by mass or more, and more preferably 98% by mass or more, when the mass of the partition wall portion is taken as 100% by mass. Other components that can be used besides low-softening-point glass include high-softening-point glass powder and ceramic powder, which are glass with a softening point exceeding 650°C. These powders make it easier to adjust the shape of the partition wall in the partition wall formation process. In order to increase the content of low-softening-point glass, the content of components other than low-softening-point glass is preferably less than 5% by mass. 【0022】 When the material constituting the partition body is a polymer material, the partition body is preferably made of polyimide or a cured product of a resin composition containing an epoxy compound or an oxetane compound. Alternatively, it may be a mixture of polyimide and a cured product of a resin composition containing an epoxy compound or an oxetane compound. The inclusion of polyimide in the partition body allows for the formation of a fine partition with a high aspect ratio and a smooth surface. The presence of phenolic hydroxyl groups in the polyimide is preferable because it provides appropriate solubility of the resin in alkaline developer, resulting in a high contrast between exposed and unexposed areas and the formation of a desired pattern. Furthermore, even after drying and heat treatment, the hydroxyl groups derived from the resin composition remain in the cured product formed using the aforementioned resin composition, thus maintaining a highly polar surface on the partition body. Therefore, when a resin composition is applied to the partition body, a uniform film without uneven repulsion can be obtained. Here, the meaning of "consisting of" does not exclude the presence of small amounts of other components. Specifically, when the mass of the partition body is taken as 100% by mass, the cured product of the resin composition containing polyimide, epoxy compound, or oxetane compound preferably accounts for 90% by mass or more, and more preferably 95% by mass or more. 【0023】Examples of epoxy compounds include aromatic epoxy compounds, alicyclic epoxy compounds, and aliphatic epoxy compounds. Two or more of these may be used. Examples of aromatic epoxy compounds include glycidyl ethers of monovalent or polyvalent phenols (phenol, bisphenol A, phenol novolac, and compounds obtained by adducting these alkylenes) having at least one aromatic ring. Examples of alicyclic epoxy compounds include compounds obtained by epoxidizing a compound having at least one cyclohexene or cyclopentene ring with an oxidizing agent (e.g., 3,4-epoxycyclohexylmethyl-3,4-epoxycyclohexanecarboxylate). Examples of aliphatic epoxy compounds include polyglycidyl ethers of aliphatic polyhydric alcohols or alkylene oxide adducts thereof (e.g., 1,4-butanediol diglycidyl ether, 1,6-hexanediol diglycidyl ether), polyglycidyl esters of aliphatic polybasic acids (e.g., diglycidyl tetrahydrophthalate), and epoxidized products of long-chain unsaturated compounds (e.g., epoxidized soybean oil, epoxidized polybutadiene). 【0024】 Epoxy compounds can improve processability without impairing the heat resistance and mechanical strength of polyimide, making it easier to form partitions of the desired shape. This allows for a greater amount of phosphor filling and improved brightness. To avoid impairing the properties of polyimide, it is preferable that the content of epoxy compounds in the partition body does not exceed 2.0 times the mass fraction of the polyimide content. If the partition body contains components other than polyimide and epoxy compounds, it is preferable that the total content of these components does not exceed the total amount of polyimide and epoxy compounds combined by mass fraction. 【0025】Examples of oxetane compounds include 3-methyl-3-hydroxymethyloxetane, 3-ethyl-3-hydroxymethyloxetane, 2-ethylhexyl(3-ethyl-3-oxetanylmethyl) ether, 2-hydroxyethyl(3-ethyl-3-oxetanylmethyl) ether, 2-hydroxypropyl(3-ethyl-3-oxetanylmethyl) ether, 1,4-bis[(3-ethyl-3-oxetanylmethoxy)methyl]benzene, oxetanylsilsesquioxane, phenol novolac oxetane, OXT-191 (trade name, manufactured by Toagosei Co., Ltd.), etc. Two or more of these may be used. In the present invention, compounds having an oxetanyl group are classified as oxetane compounds even if they are resins or compounds having an epoxy group. Furthermore, in the present invention, it is more preferable to use a compound having four or more oxetanyl groups. Oxetane compounds are cured by cationic polymerization. In particular, by selecting a compound having four or more oxetanyl groups, which exhibit excellent curability, from among various oxetane compounds, high-aspect-ratio patterns can be formed with high resolution. The oxetane compound may also contain oxetane compounds having one to three oxetanyl groups. Resin compositions containing only compounds with fewer than four oxetanyl groups will have insufficient resolution and an insufficient aspect ratio when forming high-aspect-ratio patterns. Preferably, the number of oxetanyl groups in one molecule is seven or more, which further improves the curability of the resin composition and allows for the formation of patterns with an even higher aspect ratio. On the other hand, preferably, the number of oxetanyl groups in one molecule is 20 or less, which can suppress the occurrence of cracks during pattern processing. Examples of oxetane compounds having seven to 20 oxetanyl groups in one molecule include OXT-191 (trade name, manufactured by Toagosei Co., Ltd.). The oxetane compound and / or epoxy compound preferably have a polyalkylene glycol chain. The presence of highly flexible polyalkylene glycol chains can suppress the occurrence of cracks in the film and cured product after drying. 【0026】(Organic protective layer) The organic protective layer is formed by laminating an organic protective layer and a metal reflective layer in this order as viewed from the side of the partition wall body on at least the surface of the partition wall where the phosphor is in contact. By laminating the organic protective layer in the above order, deterioration of the metal reflective layer due to elution of ionic compounds and metal salts contained in the partition wall can be prevented, and the initial luminance of the scintillator panel and the luminance stability under high-temperature and high-humidity environments can be improved. The organic protective layer is formed of a resin composition containing polysiloxane. The polysiloxane referred to in the present invention means a polymer having a siloxane skeleton (—Si—O— bond) as a repeating unit, and using polysiloxane is suitable for preventing elution of ionic compounds and metal salts due to its high crosslink density. 【0027】 And the organic protective layer, which is a component of the scintillator panel of the present invention, satisfies the following conditions (A) and (B). 【0028】 Condition (A): The polysiloxane has an organosilane unit (D unit) represented by R ２ SiO ２ / ２ (R is a monovalent hydrocarbon group) in the main chain, and in all repeating units, a structural unit (T unit) derived from R'Si(OR") ３ (R' and R" may be the same or different monovalent hydrocarbon groups) is contained in an amount of 0.01 mol% or more and 65 mol% or less when the total repeating units are 100 mol%. 【0029】 Condition (B): The organic protective layer does not contain a compound having a polymerization initiation ability with respect to the polysiloxane. 【0030】 Here, in the present invention, the organosilane unit means a silane unit having at least one or more organic groups in the side chain of the siloxane skeleton, and the organic group means a group having a carbon atom bonded to the silicon atom of the siloxane skeleton. Specific examples thereof are as described below. 【0031】Since the polysiloxane has D units in the main chain, the flexibility of the polysiloxane film is improved during the heat treatment in the manufacturing process of the scintillator panel, and it is excellent in relieving mechanical stress. Therefore, cracks in the metal reflective layer generated during the heat treatment of the manufacturing process can be prevented, and the initial luminance and sharpness of the scintillator panel can be improved. Also preferably, the luminance stability under high temperature and high humidity environments can be improved. 【0032】 Further, when the total repeating units of the polysiloxane are 100 mol%, by containing 0.01 mol% or more and 65 mol% or less of T units and satisfying condition (B), or by satisfying the following condition (B)’, the flexibility of the organic protective layer can be improved, and the ionic compounds and metal salts contained in the partition walls can be captured to prevent elution into the metal reflective layer, prevent deterioration of the metal reflective layer, and improve deterioration of the metal reflective layer can be prevented, and the initial luminance of the scintillator panel and the luminance stability under high temperature and high humidity environments can be improved. That is, generally R'Si(OR") ３ often gives a crosslinked structure when used as a polysiloxane. However, by not containing a compound having a polymerization initiation ability in the organic protective layer, it can be a polysiloxane having an active hydroxyl group (silanol group) derived from the alkoxy group contained in R'Si(OR") ３ and the action of capturing the ionic compounds and metal salts described above can be enhanced. 【0033】 Further, since the organic protective layer does not contain a compound having a polymerization initiation ability with respect to the polysiloxane compound, even if the polysiloxane compound contains polymerizable functional groups such as silanol groups, groups containing carbon-carbon double bonds, and epoxy groups, the curing reaction in the organic protective layer is suppressed, and the flexibility of the film when heated can be maintained. Furthermore, when the polysiloxane compound has groups containing double bonds and epoxy groups, etc., it is advantageous in capturing the ionic compounds and metal salts contained in the partition walls, preventing deterioration of the metal reflective layer, and improving the initial luminance of the scintillator panel and the luminance stability under high temperature and high humidity environments. 【0034】Compounds having polymerization initiation ability include thermal polymerization initiators and photoradical polymerization initiators. In particular, it is preferable that the polysiloxane compound does not contain thermal polymerization initiators or photoradical polymerization initiators (condition (B)'). Specific examples of thermal polymerization initiators include potassium persulfate, hydrogen peroxide, peroxides such as benzoyl peroxide, and azo compounds such as azobisisobutyronitrile. Furthermore, examples of photoradical polymerization initiators include alkylphenone compounds, sulfur-containing compounds, acylphosphine oxide compounds, and amine compounds. The presence or absence of a compound having polymerization initiation ability in the organic protective layer can be determined by combining FT-IR, HPLC / MS, and ICP-MS. For example, after polishing the metal reflective layer of the partition wall by ion milling, the exposed organic protective layer is scraped and 10 mg of the sample is taken. 0.5 mL of acetonitrile is added to the taken sample, sonication is performed for 60 minutes, and centrifugation is performed at 20,000 G for 15 minutes. A portion of the supernatant after centrifugation is transferred to a brown measurement vial and analyzed. If the initiator is below the detection limit using the aforementioned analytical method, it can be determined that it is not present in the organic protective layer. 【0035】 The content ratio of each repeating unit in the polysiloxane contained in the organic protective layer can be determined by the following method. After polishing the metal reflective layer of the partition wall by ion milling, the exposed organic protective layer is scraped with a file and a sample is taken for measurement. The collected sample and deuterated chloroform are placed in a glass bottle and sonicated for 10 minutes, after which the supernatant is filtered and injected into a 10 mm diameter "Teflon" (registered trademark) NMR sample tube. ２９ Si-NMR measurements were performed. The content ratio of each repeating unit was calculated from the ratio of the integral value of Si derived from a specific organosilane to the integral value of Si derived from the entire organosilane. ２９ The Si-NMR measurement conditions are shown below. 【0036】 Equipment: Nuclear magnetic resonance apparatus (JNM-GX270; manufactured by JEOL Ltd.) Measurement method: Gated decoupling method Measurement nuclear frequency: 53.6693MHz ( ２９Si nucleus) Spectral width: 20,000 Hz Pulse width: 12 μsec (45° pulse) Pulse repetition time: 30.0 seconds Reference material: Tetramethylsilane Measurement temperature: 23°C Sample rotation speed: 0.0 Hz. 【0037】 In the polysiloxane, it is preferable that R, R', and R'' contained in the D unit and T unit are each independently monovalent hydrocarbon groups containing a functional group selected from the group consisting of a methyl group, a phenyl group, a cyclopentyl group, and a cyclohexyl group (however, in the D unit, R cannot be a methyl group at the same time). The presence of the functional group in the D unit allows for low film stress during heating due to steric hindrance between the functional groups, and enables the formation of an organic protective layer with excellent crack resistance. From the viewpoint of forming an organic protective layer with low film stress and excellent crack resistance, it is preferable that R is a group selected from the group consisting of a methyl group, a phenyl group, a cyclopentyl group, and a cyclohexyl group, and it is even more preferable that both Rs are phenyl groups. 【0038】Specific examples of organosilane compounds that give D units include, for example, dimethyldimethoxysilane, dimethyldiethoxysilane, diethyldimethoxysilane, diethyldiethoxysilane, din-propyldimethoxysilane, din-propyldiethoxysilane, diisopropyldimethoxysilane, diisopropyldiethoxysilane, din-butyldimethoxysilane, din-butyldiethoxysilane, dit-butyldimethoxysilane, dit-butyldiethoxysilane, din-pentyldimethoxysilane, din-pentyldiethoxysilane, dicyclopentyldimethoxysilane Toxysilane, dicyclopentyldiethoxysilane, di-n-hexyldimethoxysilane, di-n-hexyldiethoxysilane, dicyclohexyldimethoxysilane, dicyclohexyldiethoxysilane, diheptyldimethoxysilane, diheptyldiethoxysilane, dioctyldimethoxysilane, dioctyldiethoxysilane, dinonyldimethoxysilane, dinonyldiethoxysilane, didecyldimethoxysilane, didecyldiethoxysilane, ethylmethyldimethoxysilane, ethylmethyldiethoxysilane, n-propylmethyldimethoxysilane, n- Propylmethyldiethoxysilane, isopropylmethyldimethoxysilane, isopropylmethyldiethoxysilane, n-butylmethyldimethoxysilane, n-butylmethyldiethoxysilane, t-butylmethyldimethoxysilane, t-butylmethyldiethoxysilane, n-pentylmethyldimethoxysilane, n-pentylmethyldiethoxysilane, cyclopentylmethyldimethoxysilane, cyclopentylmethyldiethoxysilane, n-hexylmethyldimethoxysilane, n-hexylmethyldiethoxysilane, cyclohexylmethyldimethoxysilane , cyclohexylmethyldiethoxysilane, heptylmethyldimethoxysilane, heptylmethyldiethoxysilane, octylmethyldimethoxysilane, octylmethyldiethoxysilane, nonylmethyldimethoxysilane, nonylmethyldiethoxysilane, decylmethyldimethoxysilane, decylmethyldiethoxysilane, diphenylsilanediol, diphenyldimethoxysilane, diphenyldiethoxysilane, methylphenyldimethoxysilane, methylphenyldiethoxysilane, naphthylmethyldimethoxysilane, naphthylmethyldiethoxysilane,Examples include biphenylmethyldimethoxysilane, biphenylmethyldiethoxysilane, cyclopentylphenyldimethoxysilane, cyclopentylphenyldiethoxysilane, cyclopentylcyclohexyldimethoxysilane, cyclopentylcyclohexyldiethoxysilane, cyclohexylphenyldimethoxysilane, and cyclohexylphenyldiethoxysilane. Two or more of these may be used. 【0039】 Among these, from the viewpoint of forming a film with low membrane stress and excellent crack resistance, dicyclopentyldimethoxysilane, dicyclopentyldiethoxysilane (both of which have cyclopentyl groups as R), dicyclohexyldimethoxysilane, dicyclohexyldiethoxysilane (both of which have cyclohexyl groups as R), cyclopentylmethyldimethoxysilane, cyclopentylmethyldiethoxysilane (one of which has a cyclopentyl group and the other a methyl group as R), cyclohexylmethyldimethoxysilane, cyclohexylmethyldiethoxysilane (one of which has a cyclohexyl group and the other a methyl group as R), diphenylsilanediol, diphenyldimethoxysilane, diphenyldiethoxysilane (both of which have phenyl groups as R) ), methylphenyldimethoxysilane, methylphenyldiethoxysilane (in which case one of R is a phenyl group and the other is a methyl group), cyclopentylphenyldimethoxysilane, cyclopentylphenyldiethoxysilane (in which case one of R is a cyclopentyl group and the other is a phenyl group), cyclopentylcyclohexyldimethoxysilane, cyclopentylcyclohexyldiethoxysilane (in which case one of R is a cyclopentyl group and the other is a cyclohexyl group), cyclohexylphenyldimethoxysilane, cyclohexylphenyldiethoxysilane (in which case one of R is a cyclohexyl group and the other is a phenyl group) are preferred, and diphenylsilanediol, diphenyldimethoxysilane, and diphenyldiethoxysilane are more preferred. 【0040】The polysiloxane is preferably such that the R groups in the D units are both phenyl groups, and the D unit content is 30 mol% to 65 mol% of the total organosilane units. A D unit content of 30 mol% or more allows for low film stress during heating due to steric hindrance between functional groups, resulting in the formation of a film with excellent crack resistance. The D unit content is preferably 35 mol% or more, and more preferably 40 mol% or more, of the total organosilane units. Furthermore, a D unit content of 65 mol% or less, of the total organosilane units, increases the crosslinking density of the film and prevents the elution of ionic compounds and metal salts. The D unit content is more preferably 60 mol% or less, and even more preferably 55 mol% or less, of the total organosilane units. 【0041】 The weight-average molecular weight (Mw) of the polysiloxane is preferably 500 or more, and more preferably 1,000 or more, from the viewpoint of preventing the elution of ionic compounds and metal salts contained in the septum. On the other hand, from the viewpoint of crack resistance, it is preferably 10,000 or less, and more preferably 5,000 or less. Here, the Mw of the polysiloxane is determined as a polystyrene equivalent value measured by gel permeation chromatography (GPC). 【0042】 The polysiloxane may have vinyl groups as functional groups. Examples of vinyl groups include allyl groups, methacrylic groups, acrylic groups, and styryl groups. From the viewpoint of capturing ionic compounds and metal salts contained in the septum and preventing deterioration of the metal reflective layer, methacrylic groups, acrylic groups, and styryl groups are preferred. The polysiloxane having vinyl groups is preferably a hydrolysis condensate of an organosilane compound having vinyl groups. 【0043】Examples of organosilane compounds having a vinyl group include vinyltrimethoxysilane, vinyltriethoxysilane, vinylmethyldimethoxysilane, vinylmethyldiethoxysilane, allyltrimethoxysilane, allyltriethoxysilane, allylmethyldimethoxysilane, allylmethyldiethoxysilane, styryltrimethoxysilane, styryltriethoxysilane, styrylmethyldimethoxysilane, styrylmethyldiethoxysilane, 3-acryloxypropyltrimethoxysilane, 3-acryloxypropyltriethoxysilane, 3-methacryloxypropyltrimethoxysilane, 3-methacryloxypropyltriethoxysilane, 3-methacryloxypropylmethyldimethoxysilane, and 3-methacryloxypropylmethyldiethoxysilane. Examples include 3-acryloxypropylmethyldimethoxysilane, 3-acryloxypropylmethyldiethoxysilane, 3-methacryloxymethyltrimethoxysilane, 3-methacryloxymethyltriethoxysilane, 3-methacryloxymethylmethyldimethoxysilane, 3-methacryloxymethylmethyldiethoxysilane, 3-acryloxymethylmethyldimethoxysilane, 3-acryloxymethyldiethoxysilane, 3-methacryloxyoctyltrimethoxysilane, 3-methacryloxyoctyltriethoxysilane, 3-methacryloxyoctylmethyldimethoxysilane, 3-methacryloxyoctylmethyldiethoxysilane, 3-acryloxyoctylmethyldimethoxysilane, 3-acryloxyoctylmethyldiethoxysilane, and the like. Two or more of these may be used. Of these, from the viewpoint of capturing ionic compounds and metal salts, 3-methacryloxypropylmethyldimethoxysilane, 3-methacryloxypropylmethyldiethoxysilane, 3-acryloxypropylmethyldimethoxysilane, 3-acryloxypropylmethyldiethoxysilane, 3-methacryloxyoctylmethyldimethoxysilane, 3-methacryloxyoctylmethyldiethoxysilane, 3-acryloxyoctylmethyldimethoxysilane, and 3-acryloxyoctylmethyldiethoxysilane are more preferred, and 3-methacryloxypropylmethyldimethoxysilane and 3-acryloxypropylmethyldimethoxysilane are even more preferred. 【0044】 The polysiloxane preferably contains organosilane units having vinyl groups in an amount of 5 mol% to 50 mol% per 100 mol% of the total organosilane units. By including 5 mol% or more, ionic compounds and metal salts in the organic protective layer can be efficiently captured and prevented from eluting into the metal reflective layer. The proportion of organosilane units having vinyl groups is more preferably 10 mol% or more per 100 mol% of the total organosilane units, and even more preferably 15 mol% or more. Furthermore, by setting the proportion of organosilane units having vinyl groups to 50 mol% or less per 100 mol% of the total organosilane units, the flexibility of the film during heat treatment can be improved and film stress can be reduced. The proportion of organosilane units having vinyl groups is more preferably 40 mol% or less per 100 mol% of the total organosilane units, and even more preferably 30 mol% or less. 【0045】 The polysiloxane preferably has either or both a carboxyl group and a dicarboxylic acid anhydride group as functional groups. Having either or both a carboxyl group and a dicarboxylic acid anhydride group improves adhesion to the underlying substrate, metal layer, or resin layer. Examples of carboxyl groups and / or dicarboxylic acid anhydride groups include alkyl carboxyl groups, succinic acid groups, succinic anhydride groups, phthalic acid groups, and phthalic anhydride groups. The polysiloxane having either or both a carboxyl group and a dicarboxylic acid anhydride group is preferably a hydrolysis condensate of an organosilane compound having either or both a carboxyl group and a dicarboxylic acid anhydride group. Specifically, examples include 3-trimethoxysilylpropyl succinic anhydride, 3-triethoxysilylpropyl succinic anhydride, 3-triphenoxysilylpropyl succinic anhydride, 3-trimethoxysisilylpropylcyclohexyldicarboxylic acid anhydride, and 3-trimethoxysisilylpropyl phthalic acid anhydride. Two or more of these may be used. Among these, 3-trimethoxysilylpropyl succinic anhydride and 3-triethoxysilylpropyl succinic anhydride are preferred from the viewpoint of adhesion to the partition wall. 【0046】 The polysiloxane preferably contains organosilane units having either a carboxyl group or a dicarboxylic acid anhydride group, or both, in an amount of 1 mol% to 30 mol% per 100 mol% of the total organosilane units. By containing 1 mol% or more of such organosilane units, good adhesion to the partition can be obtained. The proportion of such organosilane units is more preferably 3 mol% or more, and even more preferably 5 mol% or more, per 100 mol% of the total organosilane units. Furthermore, by setting the amount of organosilane units having either a carboxyl group or a dicarboxylic acid anhydride group, or both, to 30 mol% or less per 100 mol% of the total organosilane units, cracks that occur in high temperature and high humidity environments can be suppressed, and it is more preferably 25 mol% or less, and even more preferably 20 mol% or less. 【0047】 Furthermore, the aforementioned organosilane units having a vinyl group may exist as D units or as T units. The same applies to organosilane units derived from other organosilane compounds described later. 【0048】 The polysiloxane is preferably a hydrolysis condensate of a difunctional organosilane compound having R as a functional group, an organosilane compound having a vinyl group, and an organosilane compound having either or both a carboxyl group and a dicarboxylic acid anhydride group. Furthermore, it may be a hydrolysis condensate of these organosilane compounds and other organosilane compounds. 【0049】Examples of the other organosilane compounds mentioned above include methyltrimethoxysilane, methyltriethoxysilane, ethyltrimethoxysilane, ethyltriethoxysilane, hexyltrimethoxysilane, octadecyltrimethoxysilane, octadecyltriethoxysilane, phenyltrimethoxysilane, phenyltriethoxysilane, 3-aminopropyltriethoxysilane, N-(2-aminoethyl)-3-aminopropyltrimethoxysilane, 3-(N,N-diglycidyl)aminopropyltrimethoxysilane, and 3-glycidoxypropyltri Methoxysilane, 3-aminopropyltrimethoxysilane, 3-aminopropyltriethoxysilane, N-2-(aminoethyl)-3-aminopropyltrimethoxysilane, 2-cyanoethyltriethoxysilane, glycidoxymethyltrimethoxysilane, glycidoxymethyltriethoxysilane, 1-glycidoxyethyltrimethoxysilane, 1-glycidoxyethyltriethoxysilane, 2-glycidoxyethyltrimethoxysilane, 2-glycidoxyethyltriethoxysilane, 1-glycidoxypropyltrimethoxysilane, 1-glycidoxy Propyltriethoxysilane, 2-glycidoxypropyltrimethoxysilane, 2-glycidoxypropyltriethoxysilane, 3-glycidoxypropyltrimethoxysilane, 3-glycidoxypropyltriethoxysilane, 3-glycidoxypropyltripropoxysilane, 3-glycidoxypropyltriisopropoxysilane, 3-glycidoxypropyltributoxysilane, 3-glycidoxypropyltri(methoxyethoxy)silane, 1-glycidoxybutyltrimethoxysilane, 1-glycidoxybutyltriethoxysilane, 2- Ricidoxybutyltrimethoxysilane, 2-Glycidoxybutyltriethoxysilane, 3-Glycidoxybutyltrimethoxysilane, 3-Glycidoxybutyltriethoxysilane, 4-Glycidoxybutyltrimethoxysilane, 4-Glycidoxybutyltriethoxysilane, (3,4-Epoxycyclohexyl)methyltrimethoxysilane, (3,4-Epoxycyclohexyl)methyltriethoxysilane, 2-(3,4-Epoxycyclohexyl)ethyltripropoxysilane, 2-(3,4-Epoxycyclohexyl)ethyltributoxysilane,2-(3,4-epoxycyclohexyl)ethyltrimethoxysilane, 2-(3,4-epoxycyclohexyl)ethyltriethoxysilane, 2-(3,4-epoxycyclohexyl)ethyltriphenoxysilane, 3-(3,4-epoxycyclohexyl)propyltrimethoxysilane, 3-(3,4-epoxycyclohexyl)propyltriethoxysilane, 4-(3,4-epoxycyclohexyl)butyltrimethoxysilane, 4-(3,4-epoxycyclohexyl)butyltriethoxysilane, 3-glycidoxypropylmethyldimethoxy Silane, 3-aminopropylmethyldimethoxysilane, 3-aminopropylmethyldiethoxysilane, N-(2-aminoethyl)-3-aminopropylmethyldimethoxysilane, glycidoxymethyldimethoxysilane, glycidoxymethylmethyldiethoxysilane, 1-glycidoxyethylmethyldimethoxysilane, 1-glycidoxyethylmethyldiethoxysilane, 2-glycidoxyethylmethyldimethoxysilane, 2-glycidoxyethylmethyldiethoxysilane, 1-glycidoxypropylmethyldimethoxysilane, 1-glycidoxypropylmethyl Tyldiethoxysilane, 2-glycidoxypropylmethyldimethoxysilane, 2-glycidoxypropylmethyldiethoxysilane, 3-glycidoxypropylmethyldimethoxysilane, 3-glycidoxypropylmethyldiethoxysilane, 3-glycidoxypropylmethyldipropoxysilane, 2-glycidoxypropylmethyldibutoxysilane, 3-glycidoxypropylmethyldi(methoxyethoxy)silane, 3-glycidoxypropylethyldimethoxysilane, 3-glycidoxypropylethyldiethoxysilane, tetramethoxysilane, tetra Ethoxysilane, tetra-n-propoxysilane, trifluoromethyltrimethoxysilane, trifluoromethyltriethoxysilane, trifluoropropyltrimethoxysilane, trifluoropropyltriethoxysilane, perfluoropropyltrimethoxysilane, perfluoropropyltriethoxysilane, perfluoropentyltrimethoxysilane, perfluoropentyltriethoxysilane, tridecafluorooctyltrimethoxysilane, tridecafluorooctyltriethoxysilane, tridecafluorooctyltripropoxysilane,Tridecafluorooctyltriisopropoxysilane, heptadecafluorodecyltrimethoxysilane, heptadecafluorodecyltriethoxysilane, bis(trifluoromethyl)dimethoxysilane, bis(trifluoropropyl)dimethoxysilane, bis(trifluoropropyl)diethoxysilane, trifluoropropylmethyldimethoxysilane, trifluoropropylmethyldiethoxysilane, trifluoropropylethyldimethoxysilane, trifluoropropylethyldiethoxysilane, heptadecafluoro Examples include sylmethyldimethoxysilane, 1-naphthyltrimethoxysilane, 1-naphthyltriethoxysilane, 2-naphthyltrimethoxysilane, 1-anthracenyltrimethoxysilane, 9-anthracenyltrimethoxysilane, 9-phenantrenyltrimethoxysilane, 9-fluorenyltrimethoxysilane, 2-fluorenyltrimethoxysilane, 2-fluorenoneyltrimethoxysilane, 1-pyrenyltrimethoxysilane, 2-indenyltrimethoxysilane, and 5-acenaphthenyltrimethoxysilane. Two or more of these may be used. 【0050】 The polysiloxane can be obtained by hydrolysis and condensation of an organosilane compound. For example, it can be obtained by hydrolyzing an organosilane compound and then condensing the resulting silanol compound in the presence of an organic solvent or without a solvent. Various conditions for the hydrolysis reaction can be appropriately set considering the reaction scale, size and shape of the reaction vessel, etc. For example, it is preferable to add an acid catalyst and water to the organosilane compound in a solvent over a period of 1 to 180 minutes, and then react at room temperature to 110°C for 1 to 180 minutes. By carrying out the hydrolysis reaction under such conditions, a rapid reaction can be suppressed. The reaction temperature is more preferably 30 to 105°C. 【0051】It is preferable to add a catalyst to accelerate the hydrolysis and dehydration condensation reactions. Suitable catalysts include acids such as hydrochloric acid, acetic acid, formic acid, nitric acid, oxalic acid, hydrochloric acid, sulfuric acid, phosphoric acid, polyphosphate, polycarboxylic acids and their anhydrides, as well as bases such as monoethanolamine, diethanolamine, triethanolamine, 3,3-dimethylbutylamine, methylpentylamine, n-butylethylamine, dibutylamine, n-butylamine, pentylamine, isopentylamine, cyclopentylamine, hexylamine, cyclohexylamine, dimethylhexylamine, N,N-dimethylbutylamine, N,N-dimethylhexadecylamine, and N,N-dimethyl-n-octylamine, and pyridine methanesulfonate and pyridine ethanesulfonate. Organic salts such as nitrate salt, propanesulfonic acid pyridine salt, benzenesulfonic acid pyridine salt, p-toluenesulfonic acid pyridine salt, xylenesulfonic acid pyridine salt, trifluoromethanesulfonic acid pyridine salt, trifluoroethanesulfonic acid pyridine salt, trifluoropropanesulfonic acid pyridine salt, trifluoroacetate pyridine salt, p-toluenesulfonic acid 2,4,6-trimethylpyridine salt, p-toluenesulfonic acid aniline salt, tetramethylammonium p-toluenesulfonate, tetraethylammonium p-toluenesulfonate, tetramethylammonium hydroxide, and tetraethylammonium hydroxide are used. The amount of catalyst added is preferably 0.05 to 5 parts by weight per 100 parts by weight of the total organosilane compound used in the hydrolysis reaction. By setting the amount of catalyst within the above range, the hydrolysis reaction can be carried out more efficiently. After obtaining a silanol compound by the hydrolysis reaction of the organosilane compound, it is preferable to heat the reaction solution as is at 50°C or higher and below the boiling point of the solvent for 1 to 100 hours to carry out the condensation reaction. 【0052】Organic solvents used in the hydrolysis and condensation reactions of organosilane compounds include, for example, alcohols such as methanol, ethanol, propanol, isopropanol, butanol, isobutanol, t-butanol, pentanol, 4-methyl-2-pentanol, 3-methyl-2-butanol, 3-methyl-3-methoxy-1-butanol, 1-t-butoxy-2-propanol, and diacetone alcohol; glycols such as ethylene glycol and propylene glycol; ethylene glycol monomethyl ether, ethylene glycol monoethyl ether, propylene glycol monomethyl ether, propylene glycol monoethyl ether, propylene glycol monopropyl ether, propylene glycol monobutyl ether, ethylene glycol dimethyl ether, ethylene glycol diethyl ether, and ethylene glycol Examples include ethers such as lycol dibutyl ether and diethyl ether; ketones such as methyl ethyl ketone, acetylacetone, methyl propyl ketone, methyl butyl ketone, methyl isobutyl ketone, diisobutyl ketone, cyclopentanone, and 2-heptanone; amides such as dimethylformamide and dimethylacetamide; ethyl acetate, propyl acetate, butyl acetate, isobutyl acetate, ethylene glycol monoethyl ether acetate, propylene glycol monomethyl ether acetate, 3-methoxybutyl acetate, 3-methyl-3-methoxybutyl acetate, methyl lactate, ethyl lactate, and butyl lactate acetates; aromatic or aliphatic hydrocarbons such as toluene, xylene, hexane, and cyclohexane; γ-butyrolactone, N-methyl-2-pyrrolidone, and dimethyl sulfoxide. Two or more of these may be used. From the viewpoint of the solubility of each component, diacetone alcohol, propylene glycol monomethyl ether, propylene glycol monomethyl ether acetate, propylene glycol monoethyl ether, propylene glycol mono-t-butyl ether, propylene glycol monopropyl ether, propylene glycol monobutyl ether, and γ-butyrolactone are preferred. 【0053】If a solvent is generated by the hydrolysis reaction, it is also possible to carry out the hydrolysis without a solvent. After the reaction is complete, it is preferable to add a solvent to adjust the concentration to an appropriate level for the resin composition. Alternatively, depending on the purpose, after hydrolysis, an appropriate amount of the generated alcohol may be distilled off and removed by heating and / or under reduced pressure, and then a suitable solvent may be added. 【0054】 The amount of solvent used in the hydrolysis reaction is preferably 50 to 500 parts by weight per 100 parts by weight of the total organosilane compound. By setting the amount of solvent within this range, the hydrolysis reaction can be carried out more efficiently. Furthermore, ion-exchanged water is preferred for use in the hydrolysis reaction. The amount of water is preferably 1.0 to 4.0 moles per mole of silane atoms. 【0055】 The organic protective layer may further contain an adhesion improver. An adhesion improver refers to a compound having one or more reactive functional groups in its molecule that improve adhesion to the substrate. By including an adhesion improver, the adhesion between the substrate and the organic protective layer can be improved. Examples of adhesion improvers include silane coupling agents having an alkoxysilyl group and / or a silanol group, alicyclic epoxy compounds having an epoxy group, and (meth)acrylamide compounds having an amide group. Among these, silane coupling agents and (meth)acrylamide compounds are preferred from the viewpoint of further improving adhesion. 【0056】The thickness of the organic protective layer is preferably 0.05 μm or more, and more preferably 0.3 μm or more, from the viewpoint of preventing deterioration of the metal reflective layer by suppressing the elution of ionic compounds and metal salts contained in the partition wall, and improving the initial brightness and high temperature and high humidity stability of the scintillator panel. On the other hand, the thickness of the organic protective layer is preferably 1.0 μm or less, and more preferably 0.8 μm or less, from the viewpoint of increasing the volume within the cell where the phosphor is filled. The thickness of the organic protective layer can be measured by scanning electron microscopy observation. Note that the organic protective layer formed in the organic protective layer formation process described later tends to be thinner on the sides near the top of the partition wall and thicker on the sides near the bottom. Including such cases, the thickness of the organic protective layer shall be determined by the thickness at a height of 1 / 2 × h, where h is the height of the partition wall. 【0057】 (Metal Reflective Layer) In the scintillator panel of the present invention, the partition wall has a metal reflective layer located outside the organic protective layer when viewed from the partition wall body. The metal reflective layer is made of a metal capable of reflecting light, including visible light, generated from the phosphor, and is preferably provided on the entire surface of the partition wall. However, from the viewpoint of reflection efficiency and workability, there may be areas on the partition wall surface where the metal reflective layer is not present. The metal reflective layer has high reflectivity even as a thin film. Therefore, by providing a thin film metal reflective layer, the amount of phosphor filling does not easily decrease, and the brightness of the scintillator panel is further improved. As the metal reflective layer, for example, those exemplified as metal reflective layers in International Publication No. 2019 / 181444 can be used. 【0058】 (Inorganic Protective Layer) The scintillator panel of the present invention may preferably, and optionally, have an inorganic protective layer provided on the outside of the metal reflective layer when viewed from the side of the partition body. The inorganic protective layer is a layer with low permeability to water vapor, which causes corrosion of the metal, and can prevent discoloration of the metal reflective layer. Examples of inorganic protective layers include those exemplified as inorganic protective layers in International Publication No. 2019 / 181444. 【0059】(Surface Protection Layer) The scintillator panel of the present invention may preferably, and optionally, have a surface protection layer provided outside the inorganic protection layer when viewed from the partition wall body side. If the inorganic protection layer is not provided, it may be provided outside the metal reflective layer when viewed from the partition wall body side. The surface protection layer prevents contact between the phosphor, atmospheric water vapor, and binder resin used as needed, which are filled in the space partitioned by the partition wall, and is preferably formed from a polymer compound with excellent chemical durability, for example, preferably containing polysiloxane or amorphous fluororesin as a main component. Examples of surface protection layers include those exemplified as surface protection layers in International Publication No. 2019 / 181444, and examples of polysiloxane and amorphous fluororesin include those exemplified as materials constituting the surface protection layer in International Publication No. 2021 / 200327. Here, "main component" means an amount exceeding 50% by mass when the mass of the surface protection layer is 100% by mass. 【0060】 (Scintillator Functional Section) The scintillator panel of the present invention has a scintillator functional section in which a phosphor is filled in a space partitioned by a partition wall. The scintillator functional section absorbs the energy of incident radiation such as X-rays and emits electromagnetic waves in the wavelength range of 300 nm to 800 nm, that is, light ranging from ultraviolet to infrared light, mainly visible light. The light emitted from the scintillator functional section is photoelectrically converted in a photoelectric conversion layer and output as an electrical signal through an output layer. The scintillator functional section preferably contains a phosphor and a binder resin. 【0061】 (Phosphor) The phosphor is a substance that emits fluorescence in response to radiation incident on the scintillator panel, and examples of phosphors are those exemplified in International Publication No. 2021 / 200327. Due to its high luminescence efficiency, terbium-activated rare earth sulfide phosphors are preferred as the phosphor. 【0062】(Binder Resin) Examples of binder resins include those exemplified in International Publication No. 2021 / 200327. The binder resin is preferably in contact with the partition wall surface. In this case, it is sufficient for the binder resin to be in contact with at least a portion of the partition wall surface. This makes it difficult for the phosphor to fall out of the cell in the scintillator panel. The binder resin may be filled into the cell almost without any voids, as shown in Figure 1, or it may be filled with voids. The binder resin may also contain components other than resin, as long as they do not hinder the objectives of the present invention. 【0063】 As described above, the scintillator panel of the present invention provides images with high brightness and high sharpness. 【0064】 (Method for Manufacturing a Scintillator Panel) The method for manufacturing a scintillator panel of the present invention includes, for example, the steps of preparing a substrate, forming a partition body on the substrate, laminating at least an organic protective layer and a metal reflective layer on the partition body to form a partition, and filling the space partitioned by the partition with a phosphor, and further, the organic protective layer is formed from a resin composition containing polysiloxane and satisfies the following conditions (A) and (B), and the organic protective layer and the metal reflective layer satisfy the following condition (C), which is the method for manufacturing a scintillator panel. Condition (A): The polysiloxane is R ２ SiO ２ / ２ The main chain has organosilane units (D units) represented by (R is a monovalent hydrocarbon group), and in all repeating units, R'Si (OR'') ３ The material contains structural units derived from monovalent hydrocarbon groups (R' and R'' may be the same or different) in an amount of 0.01 mol% to 65 mol%, when the total repeating units are set to 100 mol%. Condition (B): The organic protective layer does not contain any compounds that have polymerization initiation ability for the polysiloxane. Condition (C): The organic protective layer and the metal reflective layer are formed such that the organic protective layer is located between the partition body and the metal reflective layer, and at least the surface of the partition that is in contact with the phosphor. 【0065】The following describes each step. Note that in the following explanation, matters common to those described in the above-mentioned embodiment of the scintillator panel will be omitted as appropriate. 【0066】 (Preparation of Substrate) The substrate used in the manufacturing method of the scintillator panel of the present invention is as described above. The substrate is preferably radiotransparent, and the material and thickness are appropriately selected considering the radiation intensity irradiated onto the scintillator panel, the adhesion to the partition wall, and the temperature incurred during the manufacturing process of the scintillator panel. 【0067】 (Partition Formation Process) The partition formation process using the resin composition of the present invention will be explained with an example. In the following example, the partition body is fabricated by photolithography, but it can also be formed by other methods such as transfer or etching. Furthermore, the partition body, the organic protective layer, the metal reflective layer, and other layers as needed may be formed in a single process. 【0068】 A coating film is obtained by coating the entire surface of the substrate with a partition material made of an inorganic material or a partition material made of a polymer material, either entirely or partially. Methods for coating the partition material include, for example, screen printing, bar coating, roll coating, die coating, and blade coating. The thickness of the coating film can be adjusted by the number of coatings, the mesh size of the screen, the viscosity of the resin composition, etc. The substrate coated with the partition material is placed in an IR oven to obtain a dried film. 【0069】 Next, a pattern is formed from the partition material dried film formed by the above method. If the partition material is photosensitive, the partition material dried film is exposed by irradiating it with a chemical beam through a mask having the desired pattern. Examples of chemical beams used for exposure include ultraviolet light, visible light, electron beams, and X-rays. In the present invention, it is preferable to use the i-line (365 nm), h-line (405 nm), and g-line (436 nm) of a mercury lamp. 【0070】After exposure, the exposed areas are removed with a developer. Examples of developers include those exemplified in International Publication No. 2021 / 200327. 【0071】 Development can be carried out by methods such as spraying the above-mentioned developer onto the film surface, pouring the developer onto the coated film surface, immersing in the developer, or immersing and applying ultrasound. Development conditions such as development time, development steps, and developer temperature should be such that the exposed areas are removed and a pattern can be formed. 【0072】 After development, rinsing with water is preferable. Alternatively, rinsing may be performed by adding alcohols such as ethanol or isopropyl alcohol, or esters such as ethyl lactate or propylene glycol monomethyl ether acetate to water. 【0073】 Additionally, a bake treatment may be performed before development if necessary. This can improve the resolution of the developed pattern and increase the tolerance range for development conditions. The bake treatment temperature is preferably in the range of 50 to 180°C, and more preferably in the range of 60 to 120°C. The duration is preferably 5 seconds to several hours. 【0074】 After pattern formation, unreacted cationic polymerizable compounds and cationic polymerization initiators remain in the dried film of the partition material. Therefore, these may decompose and generate gas during the thermal crosslinking reaction described later. To avoid this, it is preferable to irradiate the entire surface of the film after pattern formation with the aforementioned exposure light to generate acid from the cationic polymerization initiator. By doing so, the reaction of the unreacted cationic polymerizable compounds proceeds during the thermal crosslinking reaction, and the generation of gases due to thermal decomposition can be suppressed. 【0075】 After development, the partition material is hardened by applying a temperature of 120°C to 300°C to promote a thermal crosslinking reaction, thereby obtaining the partition body. Crosslinking improves heat resistance and chemical resistance. This heat treatment method can be selected by gradually increasing the temperature or by continuously increasing the temperature within a certain temperature range for 5 minutes to 5 hours. 【0076】In the method for manufacturing a scintillator panel of the present invention, the substrate used when forming the partition wall body may be used as the substrate for the scintillator panel, or the partition wall body may be peeled off from the substrate and then placed on the substrate for use. Known methods can be used to peel the partition wall body from the substrate, such as providing a peeling aid layer between the substrate and the partition wall body. 【0077】 (Organic protective layer formation process) The method for forming the organic protective layer on the partition wall body is not particularly limited as long as a layer that is to become the organic protective layer can be formed. For example, the resin composition containing the polysiloxane described above can be applied under vacuum to the substrate on which the partition wall body is formed, and then dried to remove the solvent. 【0078】 (Metal Reflective Layer Formation Process) After forming an organic protective layer on the partition wall body, a metal reflective layer is formed. The method for forming the metal reflective layer is not particularly limited, but for example, it can be formed by vacuum deposition, sputtering, vacuum film formation methods such as CVD, plating, paste coating, or spraying. Among these, a metal reflective layer formed by sputtering is preferred because it has higher uniformity of metal film thickness and higher reflectivity than those formed by other methods. 【0079】 (Formation of other layers) In addition, other layers may be optionally provided between the partition body and the organic protective layer, between the organic protective layer and the metal reflective layer, and between the metal reflective layer and the scintillator functional part containing the phosphor. 【0080】 (Phosphor Filling Process) The method for filling the space partitioned by the partition wall is not particularly limited as long as the phosphor can be filled into the space. However, as an example, a method is preferred in which a phosphor paste, obtained by mixing phosphor powder and binder resin in a solvent, is applied under vacuum to a substrate on which partition walls are formed, and then dried to remove the solvent, because the process is simple and allows for homogeneous filling of a large area. 【0081】As described above, according to the method for manufacturing a scintillator panel according to the embodiment of the present invention, a scintillator panel with high brightness and high sharpness can be obtained. Furthermore, a scintillator panel with preferably high brightness stability can be obtained. 【0082】 The present invention will be described in more detail below using examples and comparative examples, but the present invention is not limited to the following examples. 【0083】 The organosilane unit composition ratio in the polysiloxanes in synthesis examples 3 to 23 was determined by the following method: The polysiloxane solution was injected into a 10 mm diameter "Teflon" (registered trademark) NMR sample tube. ２９ Si-NMR measurements were performed, and the content ratio of each repeating unit was calculated from the ratio of the integral value of Si derived from a specific organosilane to the integral value of Si derived from the entire organosilane. ２９ The Si-NMR measurement conditions are as follows: Apparatus: Nuclear magnetic resonance spectrometer (JNM-GX270; manufactured by JEOL Ltd.) Measurement method: Gated decoupling method Measurement nuclear frequency: 53.6693 MHz ２９ Si nucleus) Spectral width: 20000 Hz Pulse width: 12 μsec (45° pulse) Pulse repetition time: 30.0 sec Solvent: Acetone-d6 Reference material: Tetramethylsilane Measurement temperature: 23°C Sample rotation speed: 0.0 Hz. 【0084】<Synthesis Example 1: Synthesis of Polyimide Resin A> Under a stream of dry nitrogen, 29.30 g (0.08 mol) of 2,2-bis(3-amino-4-hydroxyphenyl)hexafluoropropane (hereinafter abbreviated as "BAHF") (manufactured by Tokyo Chemical Industry Co., Ltd.) was added to 80 g of γ-butyrolactone (hereinafter abbreviated as "GBL") (manufactured by Fujifilm Wako Pure Chemical Industries, Ltd.) and dissolved by stirring at 120°C. Next, 30.03 g (0.1 mol) of the acid anhydride "Licacid" (trademark registered) TDA-100 (hereinafter abbreviated as "TDA-100") (manufactured by Shin Nippon Rika Co., Ltd.) was added together with 20 g of GBL and stirred at 120°C for 1 hour, then stirred at 200°C for 4 hours to obtain a reaction solution. Next, the reaction solution was added to 3 L of water to precipitate a white precipitate. This precipitate was collected by filtration, washed three times with water, and then dried in a vacuum dryer at 80°C for 5 hours to obtain polyimide resin A with a weight-average molecular weight of 4,000 and a basic functional group equivalent of 1,000 g / eq or more. 【0085】 <Synthesis Example 2: Synthesis of Oxetane Compound B> 90.0 g (0.01 mol) of novolac resin (number average molecular weight 900) (manufactured by Meiwa Chemicals, Inc.) was dissolved in 100 mL of dimethyl sulfoxide (manufactured by Fujifilm Wako Pure Chemical Industries, Ltd.), and after nitrogen purging, 60.0 g of 49% by mass aqueous potassium hydroxide solution (manufactured by Fujifilm Wako Pure Chemical Industries, Ltd.) was added, and the mixture was stirred at 90°C for 1 hour. Next, while stirring, 60.5 g (0.5 mol) of 3-(chloromethyl)-3-methyloxetane (manufactured by Tokyo Chemical Industries, Ltd.) was slowly added dropwise using a dropping funnel. After that, the mixture was stirred at 90°C for 5 hours to allow the reaction to proceed, and then the reaction solution was added to 1 L of water to precipitate a white precipitate. This precipitate was collected by filtration, washed three times with water, and then dried in a vacuum dryer at 80°C for 5 hours to obtain oxetane compound B, which has an average of 9 oxetanyl groups per molecule. 【0086】<Synthesis Example 3: Synthesis of Polysiloxane PS-1> 79.43 g of propylene glycol monomethyl ether acetate (hereinafter abbreviated as "PGMEA"), 34.05 g (0.25 mol) of methyltrimethoxysilane, 34.85 g (0.15 mol) of 3-methacryloxypropylmethyldimethoxysilane, 12.32 g (0.05 mol) of 2-(3,4-epoxycyclohexyl)ethyltrimethoxysilane, and 3-trimethoxysilylpropyl succinic anhydride. 26.23 g (0.10 mol) of the substance, 97.43 g (0.45 mol) of diphenylsilanediol, and 0.174 g of di-t-butylhydroxytoluene (0.50 wt%) relative to 3-methacryloxypropylmethyldimethoxysilane) were charged. The mixture was placed in an oil bath at 40°C and stirred while an aqueous phosphoric acid solution, prepared by dissolving 2.05 g of phosphoric acid (1.0 wt%) relative to the charged monomer in 28.80 g of water, was added dropwise over 10 minutes using a funnel as a catalyst. After stirring at 40°C for 1 hour, the oil bath temperature was set to 70°C and stirred for 1 hour, and then the oil bath temperature was further increased to 120°C. One hour after the start of heating, the internal temperature of the solution reached 100°C, and it was heated and stirred for 2 hours thereafter (internal temperature 100-110°C). During the reaction, a total of 66 g of by-products methanol and water distilled off. To the obtained siloxane resin PGMEA solution, PGMEA was added to achieve a solid content concentration of 65% by weight. To 100 parts by weight of this solution, 2 parts by weight of a weakly basic ion exchange resin ("Amberlite" (registered trademark) A21, manufactured by Organo Co., Ltd. (hereinafter referred to as "A21")) was added and the mixture was stirred at room temperature for 12 hours to remove the phosphate catalyst. Subsequently, the ion exchange resin was removed by filtration to obtain a polysiloxane (PS-1) solution. The Mw of the obtained polysiloxane was measured by GPC and found to be 2,500 (polystyrene equivalent). 【0087】(Synthesis Examples 4-23: Synthesis of Polysiloxanes PS-2 to PS-21) Solutions of polysiloxanes PS-2 to PS-21 were obtained in the same manner as in Synthesis Example 3, except that the types and compositions of the starting monomers were changed as shown in Table 1. The weight-average molecular weight (Mw) (polystyrene equivalent) of the obtained polysiloxanes, measured by the following method, is shown in Table 1. Apparatus: GPC analyzer with RI detector (2695), Waters Corporation Column: PLgelMIXED-C column (Polymer Laboratories, 300 mm) x 2 (connected in series) Measurement temperature: 40°C Flow rate: 1 mL / min Solvent: 0.5% by mass solution of tetrahydrofuran (THF) Standard substance: Polystyrene Detection mode: RI. 【0088】 【0089】 In the explanation of organosiloxane units in Table 1, the organosilane compounds used for abbreviations are listed below: D-1: Diphenylsilanediol D-2: Methylphenyldimethoxysilane D-3: Dicyclopentyldimethoxysilane D-4: Dimethyldimethoxysilane D'-1: Methyltrimethoxysilane D'-2: Phenyltrimethoxysilane D'-3: 3-Trimethoxysilylpropylsuccinic anhydride D'-4: 2-(3,4-Epoxycyclohexyl)ethyltrimethoxysilane D'-5: 3-Methacryloxypropylmethyldimethoxysilane. 【0090】 Furthermore, the term "monovalent silanol group" in Table 1 indicates that one hydroxyl group is bonded to a silicon atom. 【0091】 (Preparation Example 1: Preparation of Organic Protective Layer Composition d-1) Under a yellow light, 5.00 g of the polysiloxane (PS-1) solution obtained in Synthesis Example 3 was dissolved in 3.24 g of the solvent PGMEA and stirred. The resulting mixture was filtered through a 1.0 μm diameter filter to prepare organic protective layer composition d-1 with a solid content concentration of 50% by mass. 【0092】(Preparation Examples 2-25: Preparation of Organic Protective Layer Compositions d-2 to d-25) Organic protective layer compositions d-2 to d-25 were prepared in the same manner as in Preparation Example 1, except that the polysiloxane (PS-2) to (PS-21) solutions obtained in Synthesis Examples 4-23 were used as polysiloxanes as shown in Tables 2-4. 【0093】 The evaluation methods for each example and comparative example are shown below. 【0094】 <Crack Resistance> The organic protective layer compositions used in each example and comparative example were spin-coated onto a 10 cm square alkali-free glass substrate (glass thickness 0.5 mm) using a spin coater (MS-A150, Mikasa Corporation), and then pre-baked at 100°C for 2 minutes using a hot plate (HHP-230SQ, AS ONE Corporation) to produce pre-baked films with thicknesses of 15 μm, 37 μm, 60 μm, and 115 μm, respectively. The obtained pre-baked films were then exposed to a high-pressure mercury lamp (g, h, i lines) at an exposure dose of 200 mJ / cm using a mask aligner (LA-610, Sanei Electric Works Co., Ltd.) as the light source. ２ The images were exposed to light (i-line equivalent). Then, using an automatic developing device (AD-1200, manufactured by Takizawa Sangyo Co., Ltd.), the images were shower-developed for 60 seconds with a 2.38 wt% tetramethylammonium hydroxide (TMAH) aqueous solution, followed by rinsing with water for 30 seconds. Finally, the images were cured in an oven (DHS-42, manufactured by ESPEC Corporation) at 230°C in air for 30 minutes to produce cured films with thicknesses of 10 μm, 30 μm, 50 μm, and 100 μm, respectively. 【0095】The glass substrates with the obtained cured films were visually inspected, and the "crack resistance" of the cured films was evaluated according to the following criteria. If even one crack was found, it was judged as "crack present" at that film thickness. AA: No cracks at film thicknesses of 10 μm, 30 μm, 50 μm, and 100 μm. A: No cracks at film thicknesses of 10 μm, 30 μm, and 50 μm. Cracks present at film thickness of 100 μm. B: No cracks at film thicknesses of 10 μm and 30 μm. C: No cracks at film thickness of 10 μm. Cracks present at film thicknesses of 30 μm, 50 μm, and 100 μm. D: Cracks present at film thicknesses of 10 μm, 30 μm, 50 μm, and 100 μm. 【0096】 <Membrane Stress> For each example and comparative example, a 10 μm thick dried film was prepared on a 6-inch (15.24 cm) silicon wafer using the organic protective layer composition, similar to the evaluation of crack resistance. The dried film on the obtained 6-inch (15.24 cm) silicon wafer was measured at room temperature (23°C) using a thin film stress measuring device (manufactured by Toho Technology Co., Ltd.), and the film stress was evaluated according to the following criteria: AA: Film stress less than 1 MPa. A: Film stress 1 MPa or more and less than 5 MPa. B: Film stress 5 MPa or more and less than 15 MPa. C: Film stress 15 MPa or more. D: Cracks present and measurement impossible. 【0097】 <Defects in the Reflective Layer> The substrate with the partition wall formed after the formation of the metal reflective layer and inorganic protective layer (referred to as the "partition wall substrate" in this measurement) was observed on the partition wall surface using a VHX-S750 microscope (manufactured by Keyence Corporation). The number of defects in the metal reflective layer was measured by observing a 1 cm x 1 cm area in the central part of the partition wall substrate and evaluated according to the following criteria: A: 0 defects. B: 1 to 20 defects. C: 21 to 50 defects. D: 51 or more defects. 【0098】<Flatness> The scintillator panel sample was placed on a horizontal table, and the distance of the lift at the edges of the scintillator panel was measured visually. Flatness was evaluated according to the following criteria: A: No lifting on any of the four edges. B: One or more of the four edges are lifted, and the size of the lift is 0.1 mm or less. C: One or more of the four edges are lifted, and the size of the lift is greater than 0.1 mm but less than 1.0 mm. D: One or more of the four edges are lifted, and the size of the lift is 1.0 mm or more. 【0099】 <Initial Brightness and Sharpness> A radiation detector was fabricated by aligning a scintillator panel, which was the sample, with the center of the sensor surface of an X-ray detector PaxScan 2520V (manufactured by Varex Corporation) so that the cells corresponded one-to-one with the pixels of the sensor, and fixing the edges of the substrate with adhesive tape. X-rays from an X-ray emission device L9181-02 (manufactured by Hamamatsu Photonics K.K.) were irradiated onto this detector under the conditions of a tube voltage of 50 kV and a distance of 30 cm between the X-ray tube and the detector, and an image was acquired. In the obtained image, the average value of the digital values ​​of 256 × 256 pixels at the center of the light emission position of the scintillator panel was measured as brightness, and the relative value with the brightness of Comparative Example 1 set to 100 was calculated as the initial brightness. Sharpness was calculated using the edge method, and the value of 2 cycles / mm was used. Examples 1 to 27 and Comparative Example 2 were compared relatively with the sharpness of Comparative Example 1 set to 100. 【0100】 <High Temperature and High Humidity Stability> The scintillator panel sample was placed in a constant temperature and humidity oven at 60°C and 90% RH for 100 hours. After removal, the brightness was calculated using the same method as the initial brightness, and the relative value was calculated with the initial brightness set to 100. The calculated value was then evaluated according to the following criteria: A: Relative value between 90 and 100. B: Relative value between 80 and 90. C: Relative value between 70 and 80. D: Relative value less than 70. 【0101】<Example 1> <Formation of the partition body> 10 g of polyimide resin A obtained in Synthesis Example 1, 10 g of oxetane compound B obtained in Synthesis Example 2 as the oxetane compound, 0.10 g of photocationic polymerization initiator CPI-410S (manufactured by Sunapro Co., Ltd.), and 2.0 g of epoxy compound EX-931 (manufactured by Nagase ChemteX Corporation) were weighed and dissolved in GBL. The amount of GBL added was adjusted so that the solid content concentration was 60% by mass, with the components other than GBL being the solid content. Then, pressure filtration was performed using a retaining particle size of 1 μm to obtain a photosensitive polyimide varnish. 【0102】 A photosensitive polyimide varnish was applied to a glass substrate measuring 125 mm in length, 125 mm in width, and 0.59 mm in thickness using a die coater, so that the thickness after thermal crosslinking curing was 350 μm. The film was then dried to obtain a photosensitive polyimide varnish coating. 【0103】 Next, a photosensitive polyimide varnish coating was exposed to a chromium mask having a grid-like opening with a pitch of 200 μm and line widths of 12 μm, 15 μm, and 20 μm using an ultra-high pressure mercury lamp at an exposure dose of 5,000 mJ / cm². After exposure, the coating was heated in a hot air oven at 100°C for 90 minutes. The exposed and heated coating was developed in a 0.5 mass% potassium hydroxide aqueous solution at 30°C to remove unexposed areas and obtain a grid-like pattern. The obtained grid-like pattern was heated in air at 200°C for 60 minutes to thermal crosslink and harden, forming a grid-like partition wall body. 【0104】 <Formation of Organic Protective Layer> The organic protective layer composition d-1 obtained in Preparation Example 1 was vacuum printed onto the substrate on which the partition wall body was formed. The substrate was then dried at 90°C for 1 hour and further heated at 190°C for 1 hour to form the organic protective layer. The partition wall cross-section was exposed using a triple ion milling system EMTIC3X (LEICA), and the thickness of the organic protective layer on the side surface of the center of the partition wall in the height direction was measured by imaging using a field emission scanning electron microscope (FE-SEM) Merlin (Zeiss). The thickness was 0.5 μm. 【0105】<Formation of Metal Reflective Layer and Inorganic Protective Layer> A metal reflective layer was formed on the partition body with the formed lattice-shaped organic protective layer by sputtering with a commercially available sputtering apparatus using APC (manufactured by Furuya Metal Co., Ltd.), a silver alloy containing palladium and copper, as the sputtering target. The sputtering was carried out with a glass plate placed near the sample and under conditions that the metal thickness on the glass plate was 300 nm. After forming the metal reflective layer, a silicon nitride (SiN) film was formed as an inorganic protective layer in the same vacuum batch. At this time, the inorganic protective layer was formed under conditions that the thickness on the glass substrate was 100 nm. 【0106】 <Formation of surface protective layer> A resin solution was prepared by mixing 2 parts by mass of amorphous fluorine-containing resin "CYTOP" (registered trademark) CTL-809M with 98 parts by mass of fluorine-based solvent CT-SOLV180 (manufactured by AGC Inc.). 【0107】 The obtained resin solution was vacuum printed onto a partition wall with an inorganic protective layer, dried at 90°C for 1 hour, and then heated at 190°C for 1 hour to form a surface protective layer. The partition wall cross-section was exposed using a triple ion milling system EMTIC3X (LEICA), and the thickness of the surface protective layer on the side surface of the central part of the partition wall was measured by imaging using a field emission scanning electron microscope (FE-SEM) Merlin (Zeiss). The thickness was 1 μm. 【0108】 <Formation of the scintillator portion> A phosphor paste was prepared by mixing 10 parts by mass of phosphor powder GOS:Tb (Tb-doped gadolinium oxysulfide) with 5 parts by mass of a 10% by mass binder resin solution prepared by dissolving binder resin "Etocell" (registered trademark) 7 cp (manufactured by Dow Chemical Co., Ltd.) in benzyl alcohol (manufactured by Fujifilm Wako Pure Chemical Industries, Ltd.). The average particle size D50 (median diameter) of the phosphor, measured using a particle size distribution analyzer MT3300 (manufactured by Nikkiso Co., Ltd.), was 11 μm. 【0109】 The obtained phosphor paste was vacuum printed onto a partition wall formed with a metal reflective layer, an inorganic protective layer, and an organic protective layer, such that the volume fraction of the phosphor was 65%. It was then dried at 150°C for 15 minutes to form a scintillator layer, and a scintillator panel was obtained. 【0110】 <Examples 2-20> Except for using the polysiloxane solutions listed in Tables 2-3 instead of the polysiloxane (PS-1) solution of Synthesis Example 3 in forming the organic protective layer, a partition wall, an organic protective layer, a metal reflective layer, an inorganic protective layer, a surface protective layer, and a scintillator layer were formed in the same manner as in Example 1 to obtain a scintillator panel. 【0111】 <Examples 21-23> Except for the fact that the polysiloxane (PS-11) from Synthesis Example 13 and the polysiloxane (PS-21) from Synthesis Example 23 were mixed in the ratios shown in Table 4 in the formation of the organic protective layer, a partition wall, an organic protective layer, a metal reflective layer, an inorganic protective layer, a surface protective layer, and a scintillator layer were formed in the same manner as in Example 1 to obtain a scintillator panel. 【0112】 <Examples 24-27> Except for adjusting the amount of organic protective layer composition applied by a vacuum printing machine and changing the thickness of the organic protective layer as shown in Table 4, the partition wall, organic protective layer, metal reflective layer, inorganic protective layer, surface protective layer, and scintillator layer were formed in the same manner as in Example 1 to obtain a scintillator panel. 【0113】 <Comparative Example 1> Except for not forming an organic protective layer, a partition wall, a metal reflective layer, an inorganic protective layer, a surface protective layer, and a scintillator layer were formed in the same manner as in Example 1 to obtain a scintillator panel. 【0114】 <Comparative Example 2> Except for using PS-21 instead of polysiloxane PS-1 in the formation of the organic protective layer, a partition wall, an organic protective layer, a metal reflective layer, an inorganic protective layer, a surface protective layer, and a scintillator layer were formed in the same manner as in Example 1 to obtain a scintillator panel. 【0115】 The evaluation results are summarized in Tables 2-4. 【0116】 【0117】 【0118】 【0119】1. Partition body 2. Substrate 3. Radiation detector component 4. Scintillator panel 5. Output substrate 6. Scintillator layer 7. Diaphragm layer 8. Photoelectric conversion layer 9. Output layer 10. Substrate 11. Organic protective layer 12. Metal reflective layer 13. Inorganic protective layer 14. Surface protective layer 15. Binder resin 16. Phosphor 17. Part corresponding to Figure 2

Claims

1. A scintillator panel having a substrate, a partition wall formed on the substrate, and a phosphor filled in the space partitioned by the partition wall, wherein at least the surface of the partition wall that is in contact with the phosphor wall has an organic protective layer and a metal reflective layer laminated in that order when viewed from the side of the partition wall body, the organic protective layer is formed of a resin composition containing polysiloxane, and the scintillator panel satisfies the following conditions (A) and (B). Condition (A): The polysiloxane is R ２ SiO ２ / ２ The main chain has organosilane units represented by (R is a monovalent hydrocarbon group) (such organosilane units are hereinafter referred to as "D units"), and in all repeating units, R'Si(OR'') ３ The material contains structural units derived from monovalent hydrocarbon groups (R' and R'' may be the same or different) in an amount of 0.01 mol% to 65 mol% when the total repeating units are considered to be 100 mol%. Condition (B): The organic protective layer does not contain any compounds that have polymerization initiation ability for the polysiloxane.

2. The scintillator panel according to claim 1, wherein each R in the D unit is independently a monovalent hydrocarbon group containing a functional group selected from the group consisting of a methyl group, a phenyl group, a cyclopentyl group, and a cyclohexyl group (however, it cannot be a methyl group at the same time).

3. The scintillator panel according to claim 1 or 2, wherein the R contained in the D unit is a phenyl group, and the content of the D unit contained in the polysiloxane is 30 mol% or more and 65 mol% or less with respect to 100 mol% of the total organosilane units.

4. The scintillator panel according to claim 1 or 2, wherein the polysiloxane has a vinyl group.

5. The scintillator panel according to claim 1 or 2, wherein the thickness of the organic protective layer is 0.05 μm or more and 1.0 μm or less.

6. The scintillator panel according to claim 1 or 2, wherein the partition body is made of polyimide or a cured product of a resin composition mainly composed of an epoxy compound or an oxetane compound.

7. A method for manufacturing a scintillator panel, comprising the steps of: preparing a substrate; forming a partition body on the substrate; laminating at least an organic protective layer and a metal reflective layer on the partition body to form a partition; and filling the space partitioned by the partition with a phosphor, wherein the organic protective layer is formed from a resin composition containing polysiloxane and satisfies the following conditions (A) and (B), and the organic protective layer and the metal reflective layer satisfy the following condition (C). Condition (A): The polysiloxane is R ２ SiO ２ / ２ The main chain has organosilane units (D units) represented by (R is a monovalent hydrocarbon group), and in all repeating units, R'Si (OR'') ３ The material contains structural units derived from monovalent hydrocarbon groups (R' and R'' may be the same or different) in an amount of 0.01 mol% to 65 mol%, when the total repeating units are set to 100 mol%. Condition (B): The organic protective layer does not contain any compounds that have polymerization initiation ability for the polysiloxane. Condition (C): The organic protective layer and the metal reflective layer are formed such that the organic protective layer is located between the partition body and the metal reflective layer, and at least the surface of the partition that is in contact with the phosphor.

Images