Method for purifying single-walled carbon nanotube, high-purity single-walled carbon nanotube, and use

Impurities in single-walled carbon nanotubes were successfully removed through a multi-step purification method involving pressurized acid washing, low-temperature oxidation, room-temperature acid washing, steam oxidation, and annealing. This improved the purity and crystallinity of the nanotubes, enabling the preparation of high-purity single-walled carbon nanotubes and enhancing their electrical conductivity.

WO2026129619A1PCT designated stage Publication Date: 2026-06-25JIANGXI ZICHEN TECH CO LTD
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Patent Information

Authority / Receiving Office
WO · WO
Patent Type
Applications
Current Assignee / Owner
JIANGXI ZICHEN TECH CO LTD
Filing Date
2025-06-30
Publication Date
2026-06-25

AI Technical Summary

Technical Problem

Existing technologies struggle to effectively remove various types of impurities from single-walled carbon nanotubes, especially nano-metals and carbon impurities, which hinders the highlighting of their superior performance and their application.

Method used

A multi-step purification method is adopted, which includes pressurized pickling, low-temperature oxidation, room-temperature pickling, steam oxidation and annealing, to remove impurities in different forms, including exposed metal particles, metal particles encapsulated in amorphous carbon and metal particles encapsulated in graphite.

Benefits of technology

High-purity, high-crystallinity single-walled carbon nanotubes were obtained, with a metal content ≤0.5wt%, crystallinity 95%~98%, excellent electrical conductivity, and powder resistivity ≤0.005Ω·mm.

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Abstract

The present disclosure relates to the technical field of carbon nanotube impurity removal, and in particular to a method for purifying a single-walled carbon nanotube, a high-purity single-walled carbon nanotube, and a use. In the high-purity single-walled carbon nanotube of the present disclosure, the metal content is less than or equal to 0.5 wt%, the crystallinity Wcrystal is 95%-98%, and Wcrystal=100%-Wvolatile-Wamorphous-MA⋅Wash / (MA+x⋅MO), wherein Wvolatile, Wamorphous, and Wash are respectively a vertical-axis mass loss in the range of 0-300°C, a vertical-axis mass loss in the range of 300-500°C and a minimum vertical‑axis value in a thermogravimetric curve of the high-purity single-walled carbon nanotube; MA is the relative atomic mass of a metal element having the highest content in the high-purity single-walled carbon nanotube; MO is the relative atomic mass of an oxygen element; and x is an atomic ratio of an oxygen element in an oxide of the metal element having the highest content in the high-purity single-walled carbon nanotube to the metal element. The high-purity single-walled carbon nanotube has high purity, high crystallinity, and good electrical conductivity.
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