Element device

Abstract

The present invention provides an element device that can keep cracks from occurring in an element region when acted upon by an external force, such as at the time of pickup after singulation.　An element device according to the present technology comprises a laminated structure in which a plurality of element-containing substrates are laminated. The laminated structure includes a first region as an element region including the elements of the plurality of substrates and a second region peripheral to the first region. At least one recess is provided in a surface on one side in the direction perpendicular to the plane of the second region. The element device according to the present technology makes it possible to provide an element device that can keep cracks from occurring in an element region when acted upon by an external force acts, such as at the time of pickup after singulation.

Description

Element device

[0001] The technology according to the present disclosure (hereinafter also referred to as "the present technology") relates to an element device.

[0002] Conventionally, an image pickup device including a laminated structure including a substrate provided with an element region including elements at a central portion and recesses at a peripheral portion, and a glass layer laminated on the substrate via a resin layer is known (see, for example, Patent Documents 1 and 2). That is, in the image pickup device, a recess is provided inside the laminated structure.

[0003] Japanese Patent Application Laid-Open No. 2017-28259, Japanese Patent Application Laid-Open No. 2020-13928

[0004] However, in the conventional image pickup device, there has been room for improvement in suppressing the occurrence of cracks in the element region when an external force acts, for example, during pickup after singulation.

[0005] Therefore, the main object of the present technology is to provide an element device capable of suppressing the occurrence of cracks in the element region when an external force acts, for example, during pickup after singulation.

[0006] This technology provides an element device comprising a laminated structure in which a plurality of substrates having elements are stacked, wherein the laminated structure includes a first region as an element region containing elements of the plurality of substrates, and a second region surrounding the first region, and at least one recess is provided on one side surface of the second region. The second region does not necessarily have to have a recess for which an electrode pad is placed. The laminated structure may include a third region having a guard ring on the outer periphery side of the second region. The recess may contain a void. The recess is provided with a flexible material, and the flexible material may have a Young's modulus lower than that of Si. The flexible material may be an insulating material or a semi-insulating material. The bottom surface of the recess may be located inside any of the plurality of substrates or at the boundary between adjacent substrates. The recess may have an angular shape in plan view. The recess may have a non-angular shape in plan view. The recess may be a groove or a hole. The at least one recess may be a plurality of recesses. The second region surrounds the first region, and the plurality of recesses may be arranged along the outer periphery of the first region. The plurality of recesses may be arranged to surround the first region. The plurality of recesses may consist of at least three recesses, the first region may have at least three corners, and the at least three recesses may be positioned corresponding to the at least three corners. The longitudinal cross-section of the recess may be tapered. The longitudinal cross-section of the recess may have at least one stepped portion. The longitudinal cross-section of the recess may have no corners at the bottom. The elements of the plurality of substrates may include a pixel portion having at least one pixel, a processing unit for processing signals from the pixel portion, and at least a storage unit for storing signals from the pixel portion. A redistribution layer may be provided on the other side surface of the stacked structure, with its end portion located on the outer circumference side of the guard ring in a plan view. The one side surface of the stacked structure may be the surface of the element device.

[0007] This is a partial cross-sectional view of an element device according to Example 1 of one embodiment of this technology. This is a schematic plan view of an element device according to Example 1 of one embodiment of this technology. This is a flowchart for explaining an example of a method for manufacturing an element device according to Example 1 of one embodiment of this technology. Figures 4A to 4E are schematic process cross-sectional views showing an example of a method for manufacturing an element device according to Example 1 of one embodiment of this technology. Figures 5A and 5B are schematic plan view and schematic cross-sectional view, respectively, for explaining the effect of an element device according to Example 1 of one embodiment of this technology. Figure 6A is a schematic plan view of the element chips of Comparative Examples 1 and 2. Figure 6B is a diagram showing the locations of cracks occurring during pickup after dicing of the element chips of Comparative Examples 1 and 2. This is a partial cross-sectional view of an element device according to Example 2 of one embodiment of this technology. This is a flowchart for explaining an example of a method for manufacturing an element device according to Example 2 of one embodiment of this technology. Figures 9A to 9C are schematic process cross-sectional views showing an example of a method for manufacturing an element device according to Example 1 of one embodiment of this technology. This is a partial cross-sectional view of an element device according to Example 3 of one embodiment of this technology. This is a partial cross-sectional view of an element device according to Example 4 of one embodiment of this technology. This is a partial cross-sectional view of an element device according to Example 5 of one embodiment of this technology. This is a partial cross-sectional view of an element device according to Example 6 of one embodiment of the present technology. This is a partial cross-sectional view of an element device according to Example 7 of one embodiment of the present technology. This is a partial cross-sectional view of an element device according to Example 8 of one embodiment of the present technology. This is a partial cross-sectional view of an element device according to Example 9 of one embodiment of the present technology. This is a partial cross-sectional view of an element device according to Example 10 of one embodiment of the present technology. This is a partial cross-sectional view of an element device according to Example 11 of one embodiment of the present technology. This is a partial cross-sectional view of an element device according to Example 12 of one embodiment of the present technology. This is a partial cross-sectional view of an element device according to Example 13 of one embodiment of the present technology. This is a partial cross-sectional view of an element device according to Example 14 of one embodiment of the present technology. Figures 22A and 22B are schematic plan view and schematic cross-sectional view of an element device according to Example 15 of one embodiment of the present technology, respectively. Figures 23A and 23B are schematic plan view and schematic cross-sectional view of an element device according to Example 16 of one embodiment of the present technology, respectively. Figures 24A and 24B are schematic plan view and schematic cross-sectional view of an element device according to Example 17 of one embodiment of the present technology, respectively.Figures 25A and 25B are schematic plan view and schematic cross-sectional view of an element device according to Example 18 of one embodiment of the present technology, respectively. Figures 26A and 26B are schematic plan view and schematic cross-sectional view of an element device according to Example 19 of one embodiment of the present technology, respectively. Figures 27A and 27B are schematic plan view and schematic cross-sectional view of an element device according to Example 20 of one embodiment of the present technology, respectively. Figures 28A and 28B are schematic plan view and schematic cross-sectional view of an element device according to Example 21 of one embodiment of the present technology, respectively. These are partial cross-sectional views of an element device according to Example 21 of one embodiment of the present technology. Figures 30A and 30B are schematic plan view and schematic cross-sectional view of an element device according to Example 22 of one embodiment of the present technology, respectively. These are partial cross-sectional views of an element device according to Example 22 of one embodiment of the present technology. Figures 32A and 32B are schematic plan view and schematic cross-sectional view of an element device according to Example 23 of one embodiment of the present technology, respectively. These are partial cross-sectional views of an element device according to Example 23 of one embodiment of the present technology. Figures 34A and 34B are schematic plan views and schematic cross-sectional views of an element device according to Example 24 of one embodiment of the present technology, respectively. They are also schematic cross-sectional views of an element device according to Example 24 of one embodiment of the present technology. Figures 36A and 36B are schematic plan views and schematic cross-sectional views of an element device according to Example 25 of one embodiment of the present technology, respectively. They are also schematic cross-sectional views of an element device according to Example 25 of one embodiment of the present technology. Figures 38A and 38B are schematic plan views and schematic cross-sectional views of an element device according to Example 26 of one embodiment of the present technology, respectively. Figures 39A and 39B are schematic plan views and schematic cross-sectional views of an element device according to Example 27 of one embodiment of the present technology, respectively. Figures 40A and 40B are schematic plan views and schematic cross-sectional views of an element device according to Example 28 of one embodiment of the present technology, respectively. Figures 41A and 41B are schematic plan views and schematic cross-sectional views of an element device according to Example 29 of one embodiment of the present technology, respectively. Figures 42A and 42B are schematic plan view and schematic cross-sectional view of an element device according to Example 30 of one embodiment of the present technology, respectively. Figures 43A and 43B are schematic plan view and schematic cross-sectional view of an element device according to Example 31 of one embodiment of the present technology, respectively. Figures 44A and 44B are schematic plan view and schematic cross-sectional view of an element device according to Example 32 of one embodiment of the present technology, respectively.Figures 45A and 45B are schematic plan view and schematic cross-sectional view, respectively, of an element device according to embodiment 33 of one embodiment of the present technology. Figure 45B is a partial cross-sectional view of an element device according to embodiment 34 of one embodiment of the present technology. Figure 45B is a diagram showing an example of the use of an electronic device to which the present technology is applied. Figure 45B is a functional block diagram of an example of an electronic device equipped with an electronic device to which the present technology is applied. Figure 45B is a block diagram showing an example of the schematic configuration of a vehicle control system. Figure 45A is a diagram showing an example of the installation position of an external information detection unit and an imaging unit. Figure 45B is a diagram showing an example of the schematic configuration of an endoscopic surgery system. Figure 45B is a block diagram showing an example of the functional configuration of a camera head and a CCU.

[0008] Preferred embodiments of the present technology will be described in detail below with reference to the attached drawings. In this specification and the drawings, components having substantially the same functional configuration are denoted by the same reference numerals, and redundant explanations will be omitted. The embodiments described below represent typical embodiments of the present technology, and this will not be interpreted as narrowing the scope of the present technology. Even if this specification describes that an element device relating to the present technology has multiple effects, it is sufficient for the element device relating to the present technology to have at least one effect. The effects described in this specification are merely examples and are not limiting, and other effects may also exist.

[0009] Furthermore, the explanation will proceed in the following order: 0. Introduction 1. Element device according to Example 1 of one embodiment of this technology 2. Element device according to Example 2 of one embodiment of this technology 3. Element device according to Example 3 of one embodiment of this technology 4. Element device according to Example 4 of one embodiment of this technology 5. Element device according to Example 5 of one embodiment of this technology 6. Element device according to Example 6 of one embodiment of this technology 7. Element device according to Example 7 of one embodiment of this technology 8. Element device according to Example 8 of one embodiment of this technology 9. Element device according to Example 9 of one embodiment of this technology 10. Element device according to Example 10 of one embodiment of this technology 11. Element device according to Example 11 of one embodiment of this technology 12. Element device according to Example 12 of one embodiment of this technology 13. Element device according to Example 13 of one embodiment of this technology 14. Element device according to Example 14 of one embodiment of this technology 15. Element device according to Example 15 of one embodiment of this technology 16. Element device according to Example 16 of one embodiment of this technology 17. 18. Element device according to Example 17 of one embodiment of this technology 19. Element device according to Example 19 of one embodiment of this technology 20. Element device according to Example 20 of one embodiment of this technology 21. Element device according to Example 21 of one embodiment of this technology 22. Element device according to Example 22 of one embodiment of this technology 23. Element device according to Example 23 of one embodiment of this technology 24. Element device according to Example 24 of one embodiment of this technology 25. Element device according to Example 25 of one embodiment of this technology 26. Element device according to Example 26 of one embodiment of this technology 27. Element device according to Example 27 of one embodiment of this technology 28. Element device according to Example 28 of one embodiment of this technology 29. Element device according to Example 29 of one embodiment of this technology 30. Element device according to Example 30 of one embodiment of this technology 31. Element device according to Example 31 of one embodiment of this technology 32. Element device according to Example 32 of one embodiment of this technology 33. 34. Element device according to Example 33 of one embodiment of this technology 35. Element device according to Example 34 of one embodiment of this technology 36. Modification of this technology 37. Example of use of an element device to which this technology is applied 38. Other examples of use of an element device to which this technology is applied 39. Application example to mobile devices, etc. 30. Application example to endoscopic surgical systems

[0010] <0. Introduction>

[0011] By the way, in the device chip (device device) of Comparative Example 1 shown in the left figure of Figure 6A, electrode pads are provided in recesses formed in the area surrounding the device region. On the other hand, in the device chip (device device) of Comparative Example 2 shown in the right figure of Figure 6A, the pad region (the area where electrode pads are provided) surrounding the device region has been removed by dicing in order to shrink the chip size.

[0012] As shown in the left diagram of Figure 6B, the element chip of Comparative Example 1, after being diced (for example, after being pressed with a push-up pin at the center of the back surface of the chip, is peeled off the adhesive tape and picked up by a collet (suction holding device). At this time, stress corresponding to the external force acting on the element chip concentrates in the recess, and cracks may occur near the recess. As a result, the occurrence of cracks in the element region of the element chip of Comparative Example 1 can be suppressed.

[0013] On the other hand, as shown in the right diagram of Figure 6B, the element chip of Comparative Example 2, after being separated into individual pieces (for example, after dicing), is pressed with a push-up pin at the center of the back surface of the chip to peel it off the dicing tape (adhesive tape) and picked up by a collet. At this time, since the element chip of Comparative Example 2 does not have stress concentration points like the indentation mentioned above, cracks may occur in the element region. Such cracks in the element region can occur not only during pickup but also during bending strength tests, etc.

[0014] Therefore, after diligent study, the inventors succeeded in suppressing the occurrence of cracks in the element region when external forces are applied, such as during pickup after fragmentation, by deliberately creating stress concentration points at appropriate locations in an element chip that structurally lacks stress concentration points, such as the element chip in Comparative Example 2. This represents a novel finding by the inventors.

[0015] The inventors then developed an element device related to this technology as an element device that embodies this novel knowledge.

[0016] The following describes in detail an element device according to one embodiment of this technology, using drawings. For convenience, in the following description, the upper part of the cross-sectional view, such as in Figure 1, will be referred to as "up" and the lower part as "down".

[0017] <1. Element device according to Example 1 of one embodiment of this technology>

[0018] ≪Configuration of the Element Device≫ (Overall Configuration) Figure 1 is a partial cross-sectional view of the element device 10-1 according to Example 1 of one embodiment of this technology. Figure 2 is a schematic plan view of the element device 10-1 according to Example 1 of one embodiment of this technology. Figure 1 is a cross-sectional view taken along line 1-1 in Figure 2.

[0019] The element device 10-1 is, for example, chip-shaped and is also called an "element chip." The element device 10-1 is, for example, a WLCSP (Wafer Level Chip Size Package). The element device 10-1 constitutes, for example, a light detection device, such as a solid-state imaging device (image sensor).

[0020] As an example, the element device 10-1 includes a stacked structure LS in which a plurality of substrates having elements (hereinafter also referred to as "element substrates") are stacked. The stacked structure LS includes a first substrate 100 having a pixel portion as a first element, and a second substrate 200 stacked with the first substrate 100 and having a processing unit as a second element. The processing unit as the second element processes (for example, digitally) signals from the pixel portion (for example, analog signals).

[0021] The stacked structure LS includes a first region A1 as an element region containing multiple elements, such as a first element and a second element (pixel portion and processing portion), and a second region A2 (hereinafter also referred to as the "peripheral region") surrounding the first region A1. For example, the second region A2 surrounds the first region A1. For example, the plan view shape of the first region A1 as an element region is rectangular, and the plan view shape of the second region A2 as the peripheral region is rectangular frame-shaped.

[0022] At least one (for example, multiple) recesses R are provided on the surface of one side (the first substrate 100 side, the upper side) perpendicular to the plane of the second region A2 of the laminated structure LS. The surface of one side (upper side) of the laminated structure LS is the surface (more specifically, the outermost surface) of the element device 10-1. The second region A2 does not have recesses where electrode pads are placed. That is, the laminated structure LS is fragmented in the same way as in Comparative Example 2 described above, so that the pad area is removed.

[0023] The laminated structure LS includes a third region A3 having a guard ring GR on the outer periphery of the second region A2. The guard ring GR is made of a metal such as Cu, W, or Al.

[0024] In the laminated structure LS, a slit S is provided on the surface of the first substrate 100 side, on the outer circumference side of the guard ring GR in a plan view, to act as a crack stopper from the outer circumference of the chip during dicing.

[0025] The laminated structure LS includes an insulating film IF disposed on the side of the second substrate 200 opposite to the first substrate 100 (lower side), and a solder mask SMK (protective film) disposed on the side of the insulating film IF opposite to the second substrate 200 (lower side). (First substrate) The first substrate 100 is, for example, a pixel substrate containing at least one pixel (for example, multiple pixels) that constitutes a pixel portion as a first element. The multiple pixels are, for example, arranged in a two-dimensional array (for example, a matrix array, a staggered array, etc.) in the in-plane direction of the laminated structure LS.

[0026] The pixel substrate, as the first substrate 100, includes, for example, a first semiconductor substrate 101 and a first wiring layer 102 stacked on top of each other. Each pixel includes, for example, a photoelectric conversion unit 101b (e.g., a photodiode) provided in the first semiconductor substrate 101, a color filter CF provided on the photoelectric conversion unit 101b, and an on-chip lens OL provided on the color filter CF. The first semiconductor substrate 101 is provided with the slit S described above.

[0027] The first semiconductor substrate 101 is, for example, a semiconductor substrate such as a silicon substrate or a germanium substrate.

[0028] The first wiring layer 102 includes, for example, a first interlayer insulating film 102a and a plurality of first wirings 102b arranged in multiple layers within the first interlayer insulating film 102a. The first interlayer insulating film 102a is, for example, SiO ２ It is made of an insulator such as SiN or SiON. The guard ring GR described above is provided within the first interlayer insulating film 102a.

[0029] Of the multiple first wirings 102b, the bottommost first wiring 102b is exposed on the second substrate 200 side (lower side) surface of the first interlayer insulating film 102a. Each first wiring 102b is made of a metal such as Cu, W, or Al.

[0030] (Second Substrate) The second substrate 200 is, for example, a logic board having a logic circuit that constitutes a processing unit as a second element. The logic board as the second substrate 200 has a second semiconductor substrate 201 and a second wiring layer 202 stacked on top of each other. The second substrate 200 is stacked with the first substrate 100 such that the second wiring layer 202 faces the first wiring layer 102. The logic circuit is composed of circuit elements such as transistors provided on the second semiconductor substrate 201.

[0031] The second semiconductor substrate 201 is, for example, a semiconductor substrate such as a silicon substrate or a germanium substrate.

[0032] The second wiring layer 202 includes, for example, a second interlayer insulating film 202a and a plurality of second wirings 202b arranged in multiple layers within the second interlayer insulating film 202a. The second interlayer insulating film 202a is, for example, SiO ２ The wires are made of insulators such as SiN and SiON. Each second wiring 202b is made of a metal such as Cu, W, or Al.

[0033] Of the multiple second wirings 202b, the uppermost second wiring 202b is exposed on the surface of the second interlayer insulating film 202a on the first substrate 100 side (upper side) and is joined to the lowermost first wiring 102b by a metal bond (e.g., Cu-Cu bond).

[0034] Of the multiple second wirings 202b, the bottommost second wiring 202b is connected to one end of a redisting layer RDL (Redisting Layer) provided on the side of the insulating film IF opposite to the second semiconductor substrate 201 (the lower side) via a through-via TV (through-electrode) that penetrates the second semiconductor substrate 201 and the insulating film IF. A solder ball SB is bonded to the other end (end) of the redisting layer RDL. The redisting layer RDL is covered with a solder mask SMK. The solder ball SB is partially exposed to the solder mask SMK.

[0035] (Recess) The recess R is provided with a flexible material SM as an example. More specifically, the recess R is filled with a flexible material SM as an example. The flexible material SM preferably has a Young's modulus lower than that of Si (approximately 130-188 Gpa), and more preferably has a Young's modulus lower than that of Ge (approximately 100-105 Gpa). This allows stress corresponding to external forces to be concentrated in the recess R and the flexible material SM during pickup after fragmentation. To add to this, the recess R and the flexible material SM are more easily deformed and stress is more likely to concentrate in them than in other parts of the laminated structure LS, so stress in the element region is relieved and crack generation in the element region can be suppressed. In this way, the recess R and the flexible material SM can function as a stress concentration structure. It should be noted that a part of the recess R may be filled with the flexible material SM, and the rest of the recess R may be a void.

[0036] The flexible material SM is preferably an insulating or semi-insulating material. This is because insulating and semi-insulating materials are electrically insulated and do not affect other circuits or components of the laminated structure LS.

[0037] Silicone rubber is a specific example of a flexible material (SM). Silicone rubber is chemically stable with silicon, can be used over a wide temperature range (approximately -60 to 200°C), and has an extremely low Young's modulus (Young's modulus: approximately 0.001 to 0.01 GPa).

[0038] Epoxy resin is a specific example of a flexible material (SM). Epoxy resin has excellent adhesive properties, bonds strongly to silicone, and has a low Young's modulus (Young's modulus: approximately 3-5 GPa).

[0039] Polyimide is a specific example of a flexible material (SM). Polyimide is chemically stable with silicon and has a low Young's modulus (Young's modulus: approximately 3-8 GPa).

[0040] Specific examples of flexible polyethylene (SM) materials include polyethylene (PE) and low-density polyethylene (LDPE). PE and LDPE are chemically stable with silicon and have very low Young's modulus (Young's modulus: approximately 0.1 to 0.3 Gpa).

[0041] As a specific example of the soft material SM, polypropylene (PP) can be mentioned. PP is chemically stable with silicon and has a low Young's modulus (Young's modulus: about 1.1 to 1.5 GPa).

[0042] As a specific example of the soft material SM, fluororesin (PTFE) can be mentioned. PTFE is chemically stable with silicon and has a very low Young's modulus (Young's modulus: about 0.4 GPa).

[0043] As an example, the bottom surface of the recess R is located at the boundary between the first substrate 100 and the second substrate 200.

[0044] The recess R is, for example, a groove. Here, "groove" includes a long hole and a short hole in a broad sense and means a long hole in a narrow sense. The recess R is, for example, a linear groove (long hole) that is linear in plan view.

[0045] As an example, the recess R has an angular shape in plan view, for example, a quadrangle (specifically, a rectangle). As an example, the bottom of the longitudinal section of the recess R is angular. By having the recess R be angular in both plan view and sectional view in this way, stress can be locally concentrated on the recess R and the soft material SM during pickup after singulation, etc., and the occurrence of cracks in the element region can be sufficiently suppressed.

[0046] At least one recess R is, for example, a plurality (for example, four) of recesses R (for example, grooves). The plurality of recesses R are, for example, arranged along the outer periphery of the first region A1. Specifically, the plurality of recesses R are, for example, arranged so as to surround the first region A1. More specifically, the plurality (for example, four) of recesses R are arranged at positions corresponding to the four sides of the first region A1, respectively.

[0047] <<Manufacturing method of the element device>> Hereinafter, an example of the manufacturing method of the element device 10-1 will be described with reference to the flowchart of FIG. 3 and the schematic process cross-sectional view of FIG. 4. Here, after a plurality of element devices 10-1 are formed simultaneously in series and integrally on the same wafer, they are singulated by, for example, dicing, and chip-shaped element devices 10-1 (element chips) are obtained.

[0048] In step S1, a laminate L is created. Specifically, after creating the first substrate 100 and the second substrate 200, the first wiring layer 102 of the first substrate 100 and the second wiring layer 202 of the second substrate 200 are joined facing each other to create a laminate L in which the first substrate 100 is laminated on the second substrate 200 (see Figure 4A).

[0049] In the next step S2, a resist pattern RP is formed on the surface of the first substrate 100 side (upper side) of the laminate L to form multiple (for example, four) recesses R (see Figure 4B).

[0050] In the next step S3, the laminate L is etched (for example, dry etched) using the resist pattern RP as a mask to form multiple recesses R (see Figure 4C). The etching here is carried out until the etching bottom surface reaches the boundary between the first substrate 100 and the second substrate 200. As a result, the laminated structure LS is generated.

[0051] In the next step, S4, a flexible material SM is deposited on the laminated structure LS (see Figure 4D).

[0052] In the next step, S5, the flexible material SM is polished and flattened using, for example, a CMP (Chemical Mechanical Polishing) apparatus until the surface (top surface) of the laminated structure LS is exposed (see Figure 4E).

[0053] After the series of integrated element chips formed on the wafer as described above are separated into individual pieces by dicing on a dicing tape (adhesive tape), the center of the back surface of each element chip is pressed with a push-up pin (see Figures 5A and 5B) to peel it off the dicing tape, and the element chip is picked up by adsorption with a collet.

[0054] <<Effects of the Element Device>> The element device 10-1 described above comprises a laminated structure LS including a first substrate 100 having a first element and a second substrate 200 laminated with the first substrate 100 and having a second element. The laminated structure LS includes a first region A1 as an element region including the first and second elements, and a second region A2 surrounding the first region A1. At least one recess R is provided on the surface of the second region A2 on one side perpendicular to the surface (the first substrate 100 side).

[0055] In the element device 10-1, when an external force is applied, for example, during pickup after individualization, stress corresponding to the external force is concentrated in the recess R and the soft material SM. This makes it possible to suppress the occurrence of cracks in the element region as the first region A1.

[0056] <2. Element device according to Example 2 of one embodiment of this technology>

[0057] Figure 7 is a partial cross-sectional view of an element device 10-2 according to Example 2 of one embodiment of the present technology.

[0058] As shown in Figure 7, the element device 10-2 has the same configuration as the element device 10-1 according to Embodiment 1, except that the recess R is an air gap AG (void).

[0059] Below, an example of a manufacturing method for the element device 10-2 will be described with reference to the flowchart in Figure 8 and the schematic cross-sectional view of the process in Figure 9. In this method, multiple element devices 10-2 are formed simultaneously as a single unit on the same wafer, and then, for example, they are separated into individual pieces by dicing to obtain chip-shaped element devices 10-2 (element chips).

[0060] In step S11, a laminate L is generated. Specifically, after generating the first substrate 100 and the second substrate 200, the first wiring layer 102 of the first substrate 100 and the second wiring layer 202 of the second substrate 200 are joined facing each other to generate a laminate L in which the first substrate 100 is laminated on the second substrate 200 (see Figure 9A).

[0061] In the next step S12, a resist pattern RP is formed on the surface of the first substrate 100 side (upper side) of the laminate L to form a plurality (for example, four) recesses R (see Figure 9B).

[0062] In the next step S13, the laminate L is etched (for example, dry etched) using the resist pattern RP as a mask to form a plurality of recesses R (see Figure 9C). The etching here is carried out until the etching bottom surface reaches the boundary between the first substrate 100 and the second substrate 200. As a result, the laminated structure LS is generated.

[0063] After the series of integrated element chips formed on the wafer as described above are separated into individual pieces by dicing on a dicing tape (adhesive tape), the center of the back surface of each element chip is pressed with a push-up pin (see Figures 5A and 5B) to peel it off the dicing tape, and the element chip is picked up by adsorption with a collet.

[0064] In the element device 10-2 described above, when an external force is applied, for example, during pickup after individualization, stress corresponding to the external force is concentrated in the recess R. This makes it possible to suppress the occurrence of cracks in the element region as the first region A1.

[0065] In other words, the element device 10-2 provides the same effects as the element device 10-1 in Example 1, and since there is no need to provide a flexible material SM in the recess R, the manufacturing process can be simplified.

[0066] <3. Element device according to Example 3 of one embodiment of this technology>

[0067] Figure 10 is a partial cross-sectional view of an element device 10-3 according to Example 3 of one embodiment of the present technology.

[0068] As shown in Figure 10, the element device 10-3 has the same configuration as the element device 10-1 according to Embodiment 1, except that the laminated structure LS includes a third substrate 300 between the first substrate 100 and the second substrate 200.

[0069] The third board 300 is, for example, a memory board. The memory board has a storage unit as a third element, such as DRAM (Dynamic Random Access Memory). The memory board temporarily stores signals from the pixel board, which is the first board 100. The logic board, which is the second board 200, reads the signals stored on the memory board, which is the third board 300, and performs digital processing.

[0070] The memory substrate, which is the third substrate 300, has a third semiconductor substrate 301 and a third wiring layer 302 stacked on top of each other. The third substrate 300 is arranged between the first substrate 100 and the second substrate 200 such that the third wiring layer 302 faces the first wiring layer 102. The storage unit (e.g., DRAM) is configured to include circuit elements such as capacitors and transistors provided on the third semiconductor substrate 301.

[0071] The third semiconductor substrate 301 is, for example, a semiconductor substrate such as a silicon substrate or a germanium substrate.

[0072] The third wiring layer 302 includes, for example, a third interlayer insulating film 302a and a plurality of third wirings 302b arranged in multiple layers within the third interlayer insulating film 302a. The third interlayer insulating film 302a is, for example, SiO ２ It consists of an insulator such as SiN or SiON. Each third wiring 302b is made of, for example, Cu, W, Al, etc.

[0073] Of the multiple third wirings 302b, the uppermost third wiring 302b is exposed on the surface of the third interlayer insulating film 302a on the first substrate 100 side, and is joined to the lowermost first wiring 102b of the multiple first wirings 102b by a metal bond (for example, a Cu-Cu bond).

[0074] The lowest of the multiple third wirings 302b is connected to the uppermost of the multiple second wirings 202b via a through-silicon via (TSV) that penetrates the third semiconductor substrate 301.

[0075] Of the multiple second wirings 202b, the lowest second wiring 202b is connected to one end of a redistribution layer RDL provided on the side of the insulating film IF opposite to the second semiconductor substrate 201 (the lower side) via a through-via TV that penetrates the second semiconductor substrate 201 and the insulating film IF. A solder ball SB is bonded to the other end (end) of the redistribution layer RDL. The redistribution layer RDL is covered with a solder mask SMK. The solder ball SB is partially exposed to the solder mask SMK.

[0076] The element device 10-3 can be manufactured by a manufacturing method that is generally the same as that of the element device 10-3 according to Example 1.

[0077] As described above, the element device 10-3 achieves the same effects as the element device 10-1, and because it has a third substrate 300 that temporarily stores signals from the first substrate 100 (pixel substrate), it is not affected by the I / F speed and can increase the readout speed.

[0078] The stacked structure LS of the element device 10-3 may consist of four or more element substrates stacked together (for example, a pixel substrate, a logic substrate, a memory substrate, an analog substrate (a substrate on which analog circuits are provided), an AI (Artificial Intelligence) substrate, an interface substrate, a CPU substrate, a GPU substrate, etc.).

[0079] <4. Element device according to Example 4 of one embodiment of this technology>

[0080] Figure 11 is a partial cross-sectional view of an element device 10-4 according to Example 4 of one embodiment of the present technology.

[0081] As shown in Figure 11, the element device 10-4 has the same configuration as the element device 10-3 according to Embodiment 3, except that the recess R is an air gap AG (void).

[0082] According to the element device 10-4, the same effects as those of the element device 10-2 in Example 2 and the element device 10-3 in Example 3 can be obtained.

[0083] <5. Element device according to Example 5 of one embodiment of this technology>

[0084] Figure 12 is a partial cross-sectional view of an element device 10-5 according to Example 5 of one embodiment of the present technology.

[0085] As an example, device 10-5 has a configuration that is generally the same as device 10-1 according to Embodiment 1, except that it is an SoC (System on Chip), as shown in Figure 12.

[0086] The element device 10-5 is, as an example, an element chip in which multiple (for example, two) element substrates, each containing multiple elements (for example, a CPU (Central Processing Unit), a GPU (Graphics Processing Unit), memory, a communication module, an interface for peripheral devices, etc.), are stacked. In Figure 12, two element substrates are stacked, but three or more element substrates may be stacked.

[0087] The element device 10-5 provides an SoC that achieves the same effects as the element device 10-1 according to Example 1.

[0088] <6. Element device according to Example 6 of one embodiment of this technology>

[0089] Figure 13 is a partial cross-sectional view of an element device 10-6 according to Example 6 of one embodiment of this technology.

[0090] As shown in Figure 13, the element device 10-6 has the same configuration as the element device 10-5 according to Example 5, except that the recess R is an air gap AG (void).

[0091] According to the element device 10-6, the same effects as those of the element device 10-2 in Example 2 and the element device 10-5 in Example 5 can be obtained.

[0092] <7. Element device according to Example 7 of one embodiment of this technology>

[0093] Figure 14 is a partial cross-sectional view of an element device 10-7 according to Example 7 of one embodiment of this technology.

[0094] As shown in Figure 14, the element device 10-7 has the same configuration as the element device 10-1 according to Embodiment 1, except that the bottom surface of the recess R is located within the first semiconductor substrate 101.

[0095] According to the element device 10-7, compared to the element device 10-1 of Example 1, the recess R is very shallow, so although the stress concentration effect on the recess R and the soft material SM during pickup after fragmentation is inferior, the decrease in mechanical strength can be sufficiently suppressed.

[0096] <8. Element device according to Example 8 of one embodiment of this technology>

[0097] Figure 15 is a partial cross-sectional view of an element device 10-8 according to Example 8 of one embodiment of the present technology.

[0098] As shown in Figure 15, the element device 10-8 has the same configuration as the element device 10-7 according to Example 7, except that the recess R is an air gap AG (void).

[0099] According to the element device 10-8, the same effects as those of the element device 10-2 in Example 2 and the element device 10-7 in Example 7 can be obtained.

[0100] <9. Element device according to Example 9 of one embodiment of this technology>

[0101] Figure 16 is a partial cross-sectional view of an element device 10-9 according to Example 9 of one embodiment of this technology.

[0102] As shown in Figure 16, the element device 10-9 has the same configuration as the element device 10-1 according to Embodiment 1, except that the bottom surface of the recess R is located within the first wiring layer 102.

[0103] According to the element device 10-9, compared to the element device 10-1 of Example 1, the recess R is shallower, so although the stress concentration effect on the recess R and the soft material SM during pickup after individualization is slightly inferior, the decrease in mechanical strength can be suppressed.

[0104] <10. Element device according to Example 10 of one embodiment of the present technology>

[0105] Figure 17 is a partial cross-sectional view of an element device 10-10 according to Example 10 of one embodiment of the present technology.

[0106] As shown in Figure 17, the element device 10-10 has the same configuration as the element device 10-9 according to Example 9, except that the recess R is an air gap AG (void).

[0107] According to the element device 10-10, the same effects as those of the element device 10-2 according to Example 2 and the element device 10-9 according to Example 9 can be obtained.

[0108] <11. Element device according to Example 11 of one embodiment of the present technology>

[0109] Figure 18 is a partial cross-sectional view of an element device 10-11 according to Example 11 of one embodiment of the present technology.

[0110] As shown in Figure 18, the element device 10-11 has the same configuration as the element device 10-1 according to Embodiment 1, except that the bottom surface of the recess R is located within the second wiring layer 202.

[0111] According to the element device 10-11, compared to the element device 10-1 in Example 1, the recess R is deeper, so although it is slightly inferior in suppressing the decrease in mechanical strength, it is slightly superior in the stress concentration effect on the recess R and the soft material SM during pickup after individualization.

[0112] <12. Element device according to Example 12 of one embodiment of the present technology>

[0113] Figure 19 is a partial cross-sectional view of an element device 10-12 according to Example 12 of one embodiment of the present technology.

[0114] As shown in Figure 19, the element device 10-12 has the same configuration as the element device 10-11 according to Example 11, except that the recess R is an air gap AG (void).

[0115] According to the element device 10-12, the same effects as those of the element device 10-2 in Example 2 and the element device 10-11 in Example 11 can be obtained.

[0116] <13. Element device according to Example 13 of one embodiment of the present technology>

[0117] Figure 20 is a partial cross-sectional view of an element device 10-13 according to Example 13 of one embodiment of this technology.

[0118] As shown in Figure 20, the element device 10-13 has the same configuration as the element device 10-1 according to Embodiment 1, except that the bottom surface of the recess R is located within the second semiconductor substrate 201.

[0119] According to the element device 10-13, compared to the element device 10-1 in Example 1, the recess R is much deeper, so although it is inferior in suppressing the decrease in mechanical strength, it is superior in the stress concentration effect on the recess R and the soft material SM during pickup after individualization.

[0120] <14. Element device according to Example 14 of one embodiment of this technology>

[0121] Figure 21 is a partial cross-sectional view of an element device 10-14 according to Example 14 of one embodiment of this technology.

[0122] As shown in Figure 21, the element device 10-14 has the same configuration as the element device 10-13 according to Example 13, except that the recess R is an air gap AG (void).

[0123] According to the element device 10-14, the same effects as those of the element device 10-2 in Example 2 and the element device 10-13 in Example 13 can be obtained.

[0124] <15. Element device according to Example 15 of one embodiment of the present technology>

[0125] Figures 22A and 22B are schematic plan view and schematic cross-sectional view of the element device 10-15 according to Embodiment 15 of one embodiment of the present technology, respectively.

[0126] As shown in Figures 22A and 22B, the element device 10-15 has the same configuration as the element device 10-1 according to Embodiment 1, except that the plan view shape of each recess R is a non-angular shape, for example, an ellipse.

[0127] In the element device 10-15, each recess R is an elliptical groove with an elliptical shape in plan view.

[0128] The element device 10-15 provides the same effects as the element device 10-1 in Example 1, and because the plan view shape of each recess R is angular, it can suppress localized stress concentration in the recess R and the soft material SM, which can also suppress the occurrence of cracks in the surrounding area as the second region A2, and the soft material SM can be uniformly filled into the recess R.

[0129] In addition, in the element device 10-15, the plan view shape of each recess R may be a track shape (more specifically, a racetrack shape), which is an example of a non-angular shape. In the element device 10-15, the plan view shape of some of the recesses R among the multiple recesses R may be angular (for example, a polygon), and the plan view shape of the other recesses R may be non-angular (for example, an ellipse, a track shape, etc.).

[0130] <16. Element device according to Example 16 of one embodiment of this technology>

[0131] Figures 23A and 23B are schematic plan view and schematic cross-sectional view of the element device 10-16 according to Embodiment 16 of one embodiment of the present technology, respectively.

[0132] As shown in Figures 23A and 23B, the element device 10-16 has the same configuration as the element device 10-1 according to Embodiment 1, except that each recess R is a hole. Here, "hole" broadly includes elongated holes and short holes, and narrowly means short holes.

[0133] In the element device 10-16, at least two recesses R (for example, at least two short holes) are arranged along each side of the first region A1 (element region), and multiple recesses R (for example, many short holes) collectively surround the first region A1. Here, each recess R has an angular shape in plan view, for example, a quadrilateral (more specifically, a rectangle).

[0134] The element device 10-16 achieves the same effects as the element device 10-1 in Example 1, and because the plan view shape of each recess R is angular, stress can be locally concentrated in the recess R and the soft material SM, thereby sufficiently suppressing the occurrence of cracks in the element region as the first region A1. Furthermore, with the element device 10-16, since the multiple recesses R are numerous short holes, stress is distributed among the numerous short holes, making it less likely for excessive stress to concentrate in a particular short hole, and consequently suppressing the occurrence of cracks in the surrounding region as the second region A2. Moreover, with the element device 10-16, since the multiple recesses R are numerous short holes, processing accuracy, soft material filling efficiency, and structural uniformity can be improved compared to the case where there are a few elongated holes.

[0135] <17. Element device according to Example 17 of one embodiment of the present technology>

[0136] Figures 24A and 24B are schematic plan view and schematic cross-sectional view of the element device 10-17 according to Example 17 of one embodiment of the present technology, respectively.

[0137] As shown in Figures 24A and 24B, the element device 10-17 has the same configuration as the element device 10-16 according to Embodiment 16, except that the plan view shape of each recess R is hexagonal (for example, a regular hexagon).

[0138] The element device 10-17 achieves the same effects as the element device 10-16 in Example 16. Furthermore, the hexagonal shape of each recess R in plan view reduces stress concentration at specific locations compared to a square, resulting in a more uniform stress distribution around the recess R, and consequently, it is possible to sufficiently suppress the occurrence of cracks in the surrounding area as the second region A2.

[0139] In addition, in the element device 10-17, the plan view shape of the recess R may be a triangle, a pentagon, a polygon with seven or more sides, etc.

[0140] <18. Element device according to Example 18 of one embodiment of the present technology>

[0141] Figures 25A and 25B are schematic plan view and schematic cross-sectional view of the element device 10-18 according to Embodiment 18 of one embodiment of the present technology, respectively.

[0142] As shown in Figures 25A and 25B, the element device 10-18 has the same configuration as the element device 10-16 according to Embodiment 16, except that the plan view shape of each recess R is a non-angular shape, for example, a circle.

[0143] The element device 10-18 achieves the same effects as the element device 10-16 in Example 16. Furthermore, the circular shape of each recess R in plan view results in significantly less stress concentration at specific locations compared to a square shape (minimum stress concentration). Since the stress around the recess R is uniformly distributed, localized high-stress points are less likely to occur, and consequently, the occurrence of cracks in the surrounding area as the second region A2 can be sufficiently suppressed. Moreover, with the element device 10-18, since the circular shape of the recess R in plan view is isotropic, it has isotropic strength that can withstand forces from any direction equally.

[0144] In addition, in the element device 10-18, at least one of the multiple recesses R may have a plan view shape that is a non-angular shape, such as an ellipse or a track shape. Furthermore, in the element device 10-18, the plan view shape of a portion of the multiple recesses R may be a non-angular shape, such as a circle, ellipse, or track shape, while the plan view shape of the other portion of the multiple recesses R may be an angular shape, such as a polygon.

[0145] <19. Element device according to Example 19 of one embodiment of the present technology>

[0146] Figures 26A and 26B are schematic plan view and schematic cross-sectional view of the element device 10-19 according to Embodiment 19 of one embodiment of the present technology, respectively.

[0147] The element device 10-19 has the same configuration as the element device 10-1 in Embodiment 1, except that, as shown in Figures 26A and 26B, at least three recesses R (for example, four recesses R) are arranged at positions corresponding to at least three corners (for example, four corners) of the element region as the first region A1.

[0148] In the element device 10-19, each recess R is a short hole with an angular shape in plan view, for example, a polygon (more specifically, a quadrilateral, and even more specifically, a rectangle).

[0149] According to the element device 10-19, since the multiple recesses R are a small number of short holes, the reduction in mechanical strength can be sufficiently suppressed, and since each recess R is positioned to correspond to a different corner of the element region, stress concentration at the corner is mitigated, and crack occurrence at the corner is suppressed.

[0150] In addition, in the element device 10-19, the plan view shape of the recess R may be a triangle or a polygon having pentagons or more.

[0151] <20. Element device according to Example 20 of one embodiment of this technology>

[0152] Figures 27A and 27B are schematic plan view and schematic cross-sectional view of the element device 10-20 according to Example 20 of one embodiment of the present technology, respectively.

[0153] As shown in Figures 27A and 27B, each recess R in the element device 10-20 is, for example, a hole with no angles in plan view, such as a circular hole.

[0154] The element device 10-20 achieves the same effects as the element device 10-19 in Example 19. Furthermore, the circular shape of each recess R in plan view results in significantly less stress concentration at specific locations compared to a square shape (minimum stress concentration). Since the stress around the recess R is uniformly distributed, localized high-stress points are less likely to occur, and consequently, the occurrence of cracks in the surrounding area as the second region A2 can be sufficiently suppressed. Moreover, with the element device 10-20, since the circular shape of the recess R in plan view is isotropic, it has isotropic strength that can withstand forces from any direction equally.

[0155] In addition, in the element device 10-20, at least one of the multiple recesses R may have a plan view shape that is a non-angular shape, such as an ellipse or a track shape. Furthermore, in the element device 10-20, the plan view shape of a portion of the multiple recesses R may be a non-angular shape, such as a circle, ellipse, or track shape, while the plan view shape of the other portion of the multiple recesses R may be an angular shape, such as a polygon.

[0156] <21. Element device according to Example 21 of one embodiment of the present technology>

[0157] Figures 28A and 28B are schematic plan view and schematic cross-sectional view of the element device 10-21 according to Example 21 of one embodiment of the present technology, respectively. Figure 29 is a partial cross-sectional view of the element device 10-21 according to Example 21 of one embodiment of the present technology.

[0158] As shown in Figures 28A, 28B, and 29, the element device 10-21 has the same configuration as the element device 10-1 according to Embodiment 1, except that the longitudinal cross-section of the recess R is tapered.

[0159] In the element device 10-21, the recess R is, for example, a V-groove with a V-shaped longitudinal cross-section.

[0160] As shown in Figure 29, the element device 10-21 has a laminated structure LS, with a recess R provided, on the surface of the first substrate 100 side, where an insulating layer IL is provided as a protective layer, and a flexible material SM is provided in the recess R via the insulating layer IL. The insulating layer IL is, for example, SiO ２ It consists of an insulator such as SiN or SiON.

[0161] According to the element device 10-21, stress tends to concentrate at the bottom of the V-shape of the recess R, which further suppresses the occurrence of cracks in the element region.

[0162] In addition, in any of the element devices 10-2 to 10-20 according to Examples 2 to 20, the longitudinal cross-section of at least one recess R may be V-shaped.

[0163] <22. Element device according to Example 22 of one embodiment of this technology>

[0164] Figures 30A and 30B are schematic plan view and schematic cross-sectional view of the element device 10-22 according to Example 22 of one embodiment of the present technology, respectively. Figure 31 is a partial cross-sectional view of the element device 10-22 according to Example 22 of one embodiment of the present technology.

[0165] As shown in Figures 30A, 30B, and 31, the element device 10-22 has the same configuration as the element device 10-1 according to Embodiment 1, except that the longitudinal cross-section of the recess R is tapered.

[0166] In the element device 10-22, the recess R is, for example, a trapezoidal groove with a vertical cross-section where the upper base is longer than the lower base.

[0167] As shown in Figure 31, the device 10-22 has a laminated structure LS, with an insulating layer IL as a protective layer provided on the surface of the first substrate 100 side where the recess R is provided, and a flexible material SM is provided in the recess R via an insulating film IL. The insulating layer IL is, for example, SiO ２ It consists of an insulator such as SiN or SiON.

[0168] According to the element device 10-22, the width of the trapezoidal groove, which serves as the recess R, gradually narrows as it approaches the bottom surface of the groove. As a result, the stress generated within the laminated structure LS during pickup after individualization gradually changes. Therefore, the risk of cracks occurring in the element region is reduced, the stress generated within the laminated structure LS can be absorbed, and cracks in the surrounding region can be suppressed.

[0169] Furthermore, in any of the element devices 10-2 to 10-20 according to Examples 2 to 20, the longitudinal cross-section of at least one recess R may be trapezoidal. Also, in any of the element devices 10-1 to 10-20 according to Examples 1 to 20, the longitudinal cross-section of at least one recess R may be inversely tapered (for example, a trapezoid with a lower base longer than the upper base).

[0170] <23. Element device according to Example 23 of one embodiment of this technology>

[0171] Figures 32A and 32B are schematic plan view and schematic cross-sectional view of the element device 10-23 according to Example 23 of one embodiment of the present technology, respectively. Figure 33 is a partial cross-sectional view of the element device 10-23 according to Example 23 of one embodiment of the present technology.

[0172] As shown in Figures 32A, 32B, and 33, the element device 10-23 has the same configuration as the element device 10-1 according to Embodiment 1, except that the longitudinal cross-section of the recess R has at least one stepped portion (for example, multiple stepped portions in Figure 32B, and for example, one stepped portion in Figure 33).

[0173] In the element device 10-23, the recess R is, for example, a stepped recess (more specifically, a stepped groove) with a T-shaped or stepped trapezoidal vertical cross-section (where the lower base < upper base).

[0174] As shown in Figure 33, the device 10-23 has a laminated structure LS, with a recess R provided, on the surface of the first substrate 100 side, where an insulating layer IL is provided as a protective layer, and a flexible material SM is provided in the recess R via an insulating film IL. The insulating layer IL is, for example, SiO ２ It consists of an insulator such as SiN or SiON.

[0175] According to the element device 10-23, the width of the stepped groove gradually narrows as it approaches the bottom surface of the stepped groove. As a result, the stress generated in the laminated structure LS during pickup after fragmentation changes in stages, and the stress is absorbed at each stage, distributing stress concentration to multiple locations and suppressing localized failure (crack formation) of the laminated structure LS.

[0176] In addition, in any of the element devices 10-2 to 10-20 according to Examples 2 to 20, the longitudinal cross-section of at least one recess R may be T-shaped or stepped trapezoidal. Also, in any of the element devices 10-1 to 10-20 according to Examples 1 to 20, the longitudinal cross-section of at least one recess R may be an inverted T-shaped or stepped trapezoidal (however, the upper base < lower base) stepped recess (for example, a stepped groove).

[0177] <24. Element device according to Example 24 of one embodiment of this technology>

[0178] Figures 34A and 34B are schematic plan view and schematic cross-sectional view of the element device 10-24 according to Example 24 of one embodiment of the present technology, respectively. Figure 35 is a partial cross-sectional view of the element device 10-24 according to Example 24 of one embodiment of the present technology.

[0179] As shown in Figures 34A, 34B, and 35, the element device 10-24 has the same configuration as the element device 10-1 according to Embodiment 1, except that the longitudinal cross-section of the recess R is tapered and has at least one stepped portion (for example, multiple stepped portions in Figure 34B, and for example, one stepped portion in Figure 33).

[0180] In the element device 10-24, the recess R is, for example, a stepped tapered recess (e.g., a stepped tapered groove) having a stepped tapered shape in its longitudinal cross-section. This stepped tapered shape is a shape that can actually be expected when considering the amount of side etching in dry etching and the impact on subsequent processes.

[0181] As shown in Figure 35, the element device 10-24 has an insulating layer IL as a protective layer on the surface of the first substrate 100 side of the laminated structure LS where the recess R is provided, and a flexible material SM is provided in the recess R via an insulating film IL. The insulating layer IL is, for example, SiO ２It consists of an insulator such as SiN or SiON.

[0182] According to the element device 10-24, the width of the stepped tapered groove gradually and stepwise narrows as it approaches the bottom surface of the stepped tapered groove. As a result, the stress generated in the laminated structure LS during pickup after fragmentation changes gradually and stepwise, and the stress is gradually absorbed at each stage. This allows stress concentration to be distributed to multiple locations, and localized failure (crack formation) of the laminated structure LS can be sufficiently suppressed.

[0183] Furthermore, in any of the element devices 10-2 to 10-20 according to Examples 2 to 20, the longitudinal cross-section of at least one recess R may be a stepped tapered shape. Also, in any of the element devices 10-1 to 10-20 according to Examples 1 to 20, the longitudinal cross-section of at least one recess R may be a stepped inverse tapered shape.

[0184] <25. Element device according to Example 25 of one embodiment of this technology>

[0185] Figures 36A and 36B are schematic plan view and schematic cross-sectional view of the element device 10-25 according to Example 25 of one embodiment of the present technology, respectively. Figure 37 is a partial cross-sectional view of the element device 10-25 according to Example 25 of one embodiment of the present technology.

[0186] As shown in Figures 36A, 36B, and 37, the element device 10-25 has the same configuration as the element device 10-1 according to Embodiment 1, except that the bottom (lower part) of the vertical cross-section of the recess R is angleless (more specifically, curved, for example, a downwardly convex curve).

[0187] In the element device 10-25, the recess R has, for example, a semi-track shape in its longitudinal cross-section (a U-shaped contour).

[0188] As shown in Figure 37, the element device 10-25 has a laminated structure LS, with a recess R provided, on the surface of the first substrate 100 side, where an insulating layer IL as a protective layer is provided, and a flexible material SM is provided in the recess R via an insulating film IL. The insulating layer IL is, for example, SiO ２ It consists of an insulator such as SiN or SiON.

[0189] According to the element device 10-25, since the bottom of the longitudinal cross-section of the recess R is curved, stress is evenly distributed and the stress is distributed gradually, thus improving the durability of the laminated structure LS.

[0190] In addition, in any of the element devices 10-2 to 10-20 according to Examples 2 to 20, the longitudinal cross-section of at least one recess R may be semi-track shaped. Also, in any of the element devices 10-1 to 10-20 according to Examples 1 to 20, the longitudinal cross-section of at least one recess R may be semi-elliptical.

[0191] <26. Element device according to Example 26 of one embodiment of this technology>

[0192] Figures 38A and 38B are schematic plan view and schematic cross-sectional view of the element device 10-26 according to Embodiment 26 of one embodiment of the present technology, respectively.

[0193] The element device 10-26 has the same configuration as the element device 10-1 according to Embodiment 1, except that, as shown in Figures 38A and 38B, three recesses R (for example, short holes) are arranged to surround the first region A1.

[0194] In the element device 10-26, three recesses R (for example, short holes) are arranged at three points that are not on the same line as the peripheral region, which is the second region A2.

[0195] Although inferior to the element device 10-1 in Example 1, the element device 10-26 can suppress the occurrence of cracks in the element region.

[0196] Furthermore, the element device 10-26 may adopt any of the cross-sectional configurations of element devices 10-21 to 10-25 according to Examples 21 to 25.

[0197] <27. Element device according to Example 27 of one embodiment of this technology>

[0198] Figures 39A and 39B are schematic plan view and schematic cross-sectional view of the element device 10-27 according to Embodiment 27 of one embodiment of the present technology, respectively.

[0199] The element device 10-27 has the same configuration as the element device 10-1 according to Embodiment 1, except that, as shown in Figures 39A and 29B, three recesses R (for example, grooves) are arranged to surround the element region as the first region A1.

[0200] In the element device 10-27, three recesses R (for example, three straight grooves) are arranged in a roughly U-shape overall, surrounding the element region which is the first region A1.

[0201] Although inferior to the element device 10-1 in Example 1, the element device 10-27 can suppress the occurrence of cracks in the element region.

[0202] Furthermore, the element device 10-27 may adopt any of the cross-sectional configurations of element devices 10-21 to 10-25 according to Examples 21 to 25.

[0203] <28. Element device according to Example 28 of one embodiment of the present technology>

[0204] Figures 40A and 40B are schematic plan view and schematic cross-sectional view of the element device 10-28 according to Example 28 of one embodiment of the present technology, respectively.

[0205] As shown in Figures 40A and 40B, the element device 10-28 has the same configuration as the element device 10-1 according to Embodiment 1, except that two recesses R (for example, grooves) are arranged along the first region A1.

[0206] In the element device 10-28, two recesses R (for example, two straight grooves) are arranged to sandwich the element region, which is the first region A1.

[0207] Although inferior to the element device 10-1 in Example 1, the element device 10-28 can suppress the occurrence of cracks in the element region.

[0208] Furthermore, the element device 10-28 may adopt any of the cross-sectional configurations of element devices 10-21 to 10-25 according to Examples 21 to 25.

[0209] <29. Element device according to Example 29 of one embodiment of the present technology>

[0210] Figures 41A and 41B are schematic plan view and schematic cross-sectional view of the element device 10-29 according to Example 29 of one embodiment of the present technology, respectively.

[0211] As shown in Figures 41A and 41B, the element device 10-29 has the same configuration as the element device 10-1 according to Embodiment 1, except that a single recess R (for example, a groove) is arranged along the first region A1.

[0212] In the element device 10-29, a single recess R (for example, a single straight groove) extends along one side of the element region, which is the first region A1.

[0213] Although inferior to the element device 10-1 in Example 1, the element device 10-29 can suppress the occurrence of cracks in the element region.

[0214] Furthermore, the element device 10-29 may adopt any of the cross-sectional configurations of element devices 10-21 to 10-25 according to Examples 21 to 25.

[0215] <30. Element device according to Example 30 of one embodiment of the present technology>

[0216] Figures 42A and 42B are schematic plan view and schematic cross-sectional view of the element device 10-30 according to embodiment 30 of one embodiment of the present technology, respectively.

[0217] As shown in Figures 42A and 42B, the element device 10-30 has the same configuration as the element device 10-1 according to Embodiment 1, except that two L-shaped recesses R (for example, grooves) are provided along the first region A1 in a plan view.

[0218] In the element device 10-30, two L-shaped recesses R (for example, two L-shaped grooves) are arranged to surround the element region, which is the first region A1.

[0219] The element device 10-30 provides generally the same effects as the element device 10-1 according to Example 1.

[0220] Furthermore, the element device 10-30 may adopt any of the cross-sectional configurations of the element devices 10-21 to 10-25 according to Examples 21 to 25.

[0221] <31. Element device according to Example 31 of one embodiment of the present technology>

[0222] Figures 43A and 44B are schematic plan view and schematic cross-sectional view of the element device 10-31 according to embodiment 31 of one embodiment of the present technology, respectively.

[0223] As shown in Figures 43A and 43B, the element device 10-31 has the same configuration as the element device 10-1 according to Embodiment 1, except that a circumferential recess R (for example, a groove) is provided along the element region as the first region A1 in a plan view.

[0224] In the element device 10-31, a recess R (for example, a groove) that is circumferential in plan view, for example, frame-shaped in plan view (more specifically, rectangular frame-shaped in plan view), is arranged to surround the element region, which is the first region A1.

[0225] The element device 10-31 provides generally the same effects as the element device 10-1 in Example 1.

[0226] Furthermore, the element device 10-31 may adopt any of the cross-sectional configurations of the element devices 10-21 to 10-25 according to Examples 21 to 25.

[0227] <32. Element device according to Example 32 of one embodiment of the present technology>

[0228] Figures 44A and 44B are schematic plan view and schematic cross-sectional view of the element device 10-32 according to embodiment 32 of one embodiment of the present technology, respectively.

[0229] As shown in Figures 44A and 44B, the element device 10-32 has the same configuration as the element device 10-1 according to Embodiment 1, except that grooves as recesses R and holes (e.g., short holes) as recesses R are provided along the element region as the first region A1.

[0230] In the element device 10-32, two grooves (for example, straight grooves) serving as two recesses R are arranged along a pair of opposing sides of the element region, which is the first region A1, and multiple short holes (for example, rectangular holes) serving as recesses R are arranged along each of the other pair of opposing sides of the element region, which is the first region A1.

[0231] The element device 10-32 provides generally the same effects as the element device 10-1 in Example 1.

[0232] Furthermore, the element device 10-32 may adopt any of the cross-sectional configurations of the element devices 10-21 to 10-25 according to Examples 21 to 25.

[0233] <33. Element device according to Example 33 of one embodiment of the present technology>

[0234] Figures 45A and 45B are schematic plan view and schematic cross-sectional view of the element device 10-33 according to embodiment 33 of one embodiment of the present technology, respectively.

[0235] As shown in Figures 45A and 45B, the element device 10-33 has the same configuration as the element device 10-1 according to Embodiment 1, except that four holes (for example, short holes) as four recesses R are provided along the element region as the first region A1.

[0236] In the element device 10-33, short holes (for example, rectangular holes) as recesses R are arranged along each of the four sides of the element region, which is the first region A1.

[0237] Although inferior to the element device 10-1 in Example 1, the element device 10-33 can suppress the occurrence of cracks in the element region.

[0238] Furthermore, the element device 10-33 may adopt any of the cross-sectional configurations of the element devices 10-21 to 10-25 according to Examples 21 to 25. <34. Element device according to Example 34 of one embodiment of the present technology>

[0239] Figure 46 is a partial cross-sectional view of an element device 10-34 according to Example 34 of one embodiment of the present technology.

[0240] As shown in Figure 46, the element device 10-34 has a redistribution layer RDL on the other side (second substrate 200 side, lower side) of the laminated structure LS perpendicular to the plane (more specifically, the lower surface of the insulating film IF), with its end portion located on the outer circumference side of the guard ring GR in a plan view. Solder balls SB are bonded to the end portion of the redistribution layer RDL.

[0241] According to the element device 10-34, for example, compared to the case where the end portion of the redistribution layer RDL is located in the element region as the first region A1, the degree of freedom in designing elements and wiring within the element region is improved.

[0242] <35. Modifications of this Technology> The configuration of the element device according to each embodiment described above can be modified as appropriate.

[0243] For example, the stacked structure LS of the device may consist of three or more stacked element substrates. In this case, the element substrates may include pixel substrates, logic substrates, memory substrates, analog substrates, AI substrates, interface substrates, CPU substrates, GPU substrates, communication substrates, etc.

[0244] For example, if the element device has a plurality of recesses R, the plan view shape and / or cross-sectional shape of the plurality of recesses R may be made different from each other.

[0245] The element region, designated as the first region A1, may have a planar shape other than a rectangle, such as a polygon, circle, or ellipse. In this case, the peripheral region, designated as the second region A2, may have a planar shape corresponding to the planar shape of the first region A1 (for example, a polygonal frame, a circular frame, an elliptical frame, etc.).

[0246] For example, the configurations of the element devices according to each of the above embodiments may be combined with each other within a range that is not technically contradictory.

[0247] The numerical values, materials, shapes, dimensions, etc., used in the descriptions of each of the above embodiments are examples only and are not limited to those.

[0248] <36. Examples of Use of Element Devices Applying This Technology> Figure 47 shows examples of use when an element device relating to this technology (for example, the element devices relating to each of the above embodiments (excluding embodiments 5 and 6) and modified examples) constitutes a solid-state imaging device (image sensor).

[0249] Each of the embodiments and modifications described above can be used in various cases of sensing light such as visible light, infrared light, ultraviolet light, and X-rays, for example, as follows. That is, as shown in Figure 47, they can be used in devices used in fields such as the field of viewing images for viewing purposes, the field of transportation, the field of home appliances, the field of medical care and healthcare, the field of security, the field of beauty, the field of sports, and the field of agriculture.

[0250] Specifically, in the field of appreciation, for example, the element device according to this technology can be used in devices for capturing images intended for appreciation, such as digital cameras, smartphones, and mobile phones with camera functions.

[0251] In the field of transportation, for example, the element device relating to this technology can be used in devices used for traffic purposes, such as in-vehicle sensors that photograph the front, rear, surroundings, and interior of a vehicle for safe driving such as automatic stopping, and for recognizing the driver's condition; surveillance cameras that monitor moving vehicles and roads; and distance measuring sensors that measure the distance between vehicles.

[0252] In the field of home appliances, for example, the element device related to this technology can be used in devices used in home appliances such as television sets, refrigerators, and air conditioners to capture user gestures and perform device operations according to those gestures.

[0253] In the medical and healthcare fields, for example, the element device related to this technology can be used in devices used for medical and healthcare purposes, such as endoscopes and devices that perform angiography using infrared light reception.

[0254] In the field of security, for example, the element device related to this technology can be used in security devices such as surveillance cameras for crime prevention and cameras for person authentication.

[0255] In the field of beauty, for example, the element device related to this technology can be used in devices used for beauty purposes, such as skin measuring devices for photographing skin or microscopes for photographing the scalp.

[0256] In the field of sports, for example, the element device according to this technology can be used in devices used for sports, such as action cameras and wearable cameras for sports applications.

[0257] In the field of agriculture, for example, the element device according to this technology can be used in devices used for agricultural purposes, such as cameras for monitoring the condition of fields and crops.

[0258] Next, specific examples of the use of the element device related to this technology (for example, the element device according to each of the above embodiments and modified examples) will be described. For example, the element device according to each of the embodiments (except embodiments 5 and 6) and modified examples described above can be applied as a solid-state imaging device 501 to any type of electronic device equipped with an imaging function, such as a camera system such as a digital still camera or a video camera, or a mobile phone with an imaging function. Figure 48 shows a schematic configuration of an electronic device 510 (camera) as an example. This electronic device 510 is, for example, a video camera capable of shooting still images or moving images, and includes a solid-state imaging device 501, an optical system (optical lens) 502, a shutter device 503, a drive unit 504 that drives the solid-state imaging device 501 and the shutter device 503, and a signal processing unit 505.

[0259] The optical system 502 guides the image light (incident light) from the subject to the pixel area of ​​the solid-state imaging device 501. This optical system 502 may be composed of multiple optical lenses. The shutter device 503 controls the light irradiation period and the light shielding period for the solid-state imaging device 501. The drive unit 504 controls the transfer operation of the solid-state imaging device 501 and the shutter operation of the shutter device 503. The signal processing unit 505 performs various signal processing on the signal output from the solid-state imaging device 501. The processed video signal Dout is stored in a storage medium such as memory, or output to a monitor or the like.

[0260] <37. Other Uses of Devices Applying This Technology> Devices relating to this technology (for example, each embodiment (excluding embodiments 5 and 6) and modified device devices) can also be applied to other electronic devices that detect light, such as TOF (Time Of Flight) sensors. When applied to TOF sensors, for example, it can be applied to distance image sensors using the direct TOF measurement method and distance image sensors using the indirect TOF measurement method. In distance image sensors using the direct TOF measurement method, since the arrival timing of photons is directly determined in the time domain at each pixel, a short pulse width optical pulse is transmitted and an electrical pulse is generated by a receiver that responds quickly. This disclosure can be applied to the receiver in that case. In the indirect TOF method, the time of flight of light is measured using a semiconductor device structure in which the detection and storage amount of carriers generated by light change depending on the arrival timing of the light. This disclosure can also be applied as such a semiconductor structure. When applied to TOF sensors, it is optional to provide on-chip color filters and on-chip lenses, and they do not need to be provided.

[0261] <38. Examples of Application to Mobile Devices, etc.> The technology relating to this disclosure (this technology) can be applied to various products. For example, the technology relating to this disclosure may be implemented as a device mounted on any type of mobile device such as automobiles, electric vehicles, hybrid electric vehicles, motorcycles, bicycles, personal mobility devices, airplanes, drones, ships, robots, etc., or on low-power devices such as smartphones, smartwatches, tablets, mice, and laptop computers.

[0262] Figure 49 is a block diagram showing a schematic configuration example of a vehicle control system, which is an example of a mobile control system to which the technology described herein may be applied.

[0263] The vehicle control system 12000 comprises a plurality of electronic control units connected via a communication network 12001. In the example shown in Figure 49, the vehicle control system 12000 includes a drive system control unit 12010, a body system control unit 12020, an external information detection unit 12030, an internal information detection unit 12040, and an integrated control unit 12050. The functional configuration of the integrated control unit 12050 is shown in the figure, which includes a microcomputer 12051, an audio / image output unit 12052, and an in-vehicle network interface 12053.

[0264] The drivetrain control unit 12010 controls the operation of devices related to the vehicle's drivetrain according to various programs. For example, the drivetrain control unit 12010 functions as a control device for a drivetrain generating device that generates driving force for the vehicle, such as an internal combustion engine or a drive motor; a drivetrain transmission mechanism that transmits driving force to the wheels; a steering mechanism that adjusts the steering angle of the vehicle; and a braking device that generates braking force for the vehicle.

[0265] The body system control unit 12020 controls the operation of various devices mounted on the vehicle body according to various programs. For example, the body system control unit 12020 functions as a control device for a keyless entry system, a smart key system, a power window system, or various lamps such as headlights, reverse lights, brake lights, turn signals, or fog lights. In this case, the body system control unit 12020 may receive radio waves transmitted from a portable device that replaces a key or signals from various switches. The body system control unit 12020 receives these radio waves or signals and controls the vehicle's door lock system, power window system, lamps, etc.

[0266] The external information detection unit 12030 detects information from outside the vehicle equipped with the vehicle control system 12000. For example, an imaging unit 12031 is connected to the external information detection unit 12030. The external information detection unit 12030 causes the imaging unit 12031 to capture images of the outside of the vehicle and receives the captured images. Based on the received images, the external information detection unit 12030 may perform object detection processing such as detecting people, cars, obstacles, signs, or characters on the road surface, or distance detection processing.

[0267] The imaging unit 12031 is a light sensor that receives light and outputs an electrical signal corresponding to the amount of light received. The imaging unit 12031 can output the electrical signal as an image or as distance measurement information. The light received by the imaging unit 12031 may be visible light or invisible light such as infrared light.

[0268] The in-vehicle information detection unit 12040 detects information inside the vehicle. The in-vehicle information detection unit 12040 is connected to, for example, a driver status detection unit 12041 that detects the driver's state. The driver status detection unit 12041 includes, for example, a camera that captures images of the driver, and the in-vehicle information detection unit 12040 may calculate the driver's level of fatigue or concentration, or determine whether the driver is drowsy, based on the detection information input from the driver status detection unit 12041.

[0269] The microcomputer 12051 can calculate control target values ​​for the drive force generator, steering mechanism, or braking device based on information inside and outside the vehicle acquired by the external information detection unit 12030 or the internal information detection unit 12040, and output control commands to the drive system control unit 12010. For example, the microcomputer 12051 can perform cooperative control aimed at realizing ADAS (Advanced Driver Assistance System) functions, including vehicle collision avoidance or impact mitigation, following driving based on distance between vehicles, maintaining vehicle speed, vehicle collision warning, or vehicle lane departure warning.

[0270] Furthermore, the microcomputer 12051 can perform cooperative control for purposes such as autonomous driving, where the vehicle drives autonomously without driver intervention, by controlling the drive force generating device, steering mechanism, or braking device, etc., based on information about the vehicle's surroundings acquired by the external information detection unit 12030 or the internal information detection unit 12040.

[0271] Furthermore, the microcomputer 12051 can output control commands to the body system control unit 12020 based on external information acquired by the external information detection unit 12030. For example, the microcomputer 12051 can control the headlights according to the position of a preceding or oncoming vehicle detected by the external information detection unit 12030, and perform coordinated control aimed at reducing glare, such as switching from high beams to low beams.

[0272] The audio-image output unit 12052 transmits at least one of audio and image output signals to an output device capable of visually or audibly notifying information to the vehicle's occupants or to those outside the vehicle. In the example shown in Figure 49, the output devices are exemplified as an audio speaker 12061, a display unit 12062, and an instrument panel 12063. The display unit 12062 may include, for example, at least one of an onboard display and a head-up display.

[0273] Figure 50 shows an example of the installation position of the imaging unit 12031.

[0274] In Figure 50, the vehicle 12100 has imaging units 12101, 12102, 12103, 12104, and 12105 as the imaging unit 12031.

[0275] The imaging units 12101, 12102, 12103, 12104, and 12105 are installed, for example, on the front nose, side mirrors, rear bumper, back door, and the upper part of the windshield inside the vehicle 12100. The imaging unit 12101 installed on the front nose and the imaging unit 12105 installed on the upper part of the windshield inside the vehicle mainly acquire images of the front of the vehicle 12100. The imaging units 12102 and 12103 installed on the side mirrors mainly acquire images of the sides of the vehicle 12100. The imaging unit 12104 installed on the rear bumper or back door mainly acquires images of the rear of the vehicle 12100. The forward images acquired by imaging units 12101 and 12105 are mainly used for detecting preceding vehicles, pedestrians, obstacles, traffic lights, traffic signs, or lanes.

[0276] Figure 50 shows an example of the imaging ranges of imaging units 12101 to 12104. Imaging range 12111 indicates the imaging range of imaging unit 12101 located on the front nose, imaging ranges 12112 and 12113 indicate the imaging ranges of imaging units 12102 and 12103 located on the side mirrors, respectively, and imaging range 12114 indicates the imaging range of imaging unit 12104 located on the rear bumper or back door. For example, by superimposing the image data captured by imaging units 12101 to 12104, an overhead view image of the vehicle 12100 can be obtained.

[0277] At least one of the imaging units 12101 to 12104 may have a function for acquiring distance information. For example, at least one of the imaging units 12101 to 12104 may be a stereo camera consisting of multiple image sensors, or an image sensor having pixels for phase difference detection.

[0278] For example, the microcomputer 12051, based on distance information obtained from the imaging units 12101 to 12104, can determine the distance to each object within the imaging range 12111 to 12114 and the temporal change of this distance (relative speed to the vehicle 12100). In particular, it can extract the closest object on the vehicle 12100's path that is traveling or stopped in approximately the same direction as the vehicle 12100 at a predetermined speed (e.g., 0 km / h or more) as a preceding vehicle. Furthermore, the microcomputer 12051 can set a predetermined distance to be maintained in front of the preceding vehicle and perform automatic braking control (including follow-and-stop control) and automatic acceleration control (including follow-and-start control), etc. In this way, cooperative control aimed at autonomous driving, where the vehicle drives autonomously without driver intervention, can be performed.

[0279] For example, the microcomputer 12051 can use distance information obtained from imaging units 12101 to 12104 to classify and extract three-dimensional object data related to three-dimensional objects, such as motorcycles, passenger cars, large vehicles, pedestrians, utility poles, and other three-dimensional objects, and use this data for automatic obstacle avoidance. For example, the microcomputer 12051 identifies obstacles around the vehicle 12100 into obstacles that are visible to the driver of the vehicle 12100 and obstacles that are difficult to see. The microcomputer 12051 then determines the collision risk, which indicates the degree of risk of collision with each obstacle. If the collision risk is above a set value and there is a possibility of collision, the microcomputer 12051 can provide driving assistance to avoid collisions by outputting a warning to the driver via the audio speaker 12061 or the display unit 12062, or by performing forced deceleration or evasive steering via the drive system control unit 12010.

[0280] At least one of the imaging units 12101 to 12104 may be an infrared camera that detects infrared light. For example, the microcomputer 12051 can recognize pedestrians by determining whether or not pedestrians are present in the images captured by the imaging units 12101 to 12104. Such pedestrian recognition is performed, for example, by a procedure to extract feature points from the images captured by the imaging units 12101 to 12104 as infrared cameras, and a procedure to perform pattern matching on a series of feature points that indicate the contour of an object to determine whether or not it is a pedestrian. When the microcomputer 12051 determines that a pedestrian is present in the images captured by the imaging units 12101 to 12104 and recognizes a pedestrian, the audio-image output unit 12052 controls the display unit 12062 to superimpose a rectangular contour line for emphasis on the recognized pedestrian. The audio-image output unit 12052 may also control the display unit 12062 to display an icon indicating a pedestrian at a desired position.

[0281] The above describes an example of a vehicle control system to which the technology relating to this disclosure (this technology) may be applied. The technology relating to this disclosure can be applied to, for example, the imaging unit 12031, among the configurations described above. Specifically, the element device of this disclosure can be applied to the imaging unit 12031. By applying the technology relating to this disclosure to the imaging unit 12031, it is possible to improve yield and reduce manufacturing costs.

[0282] <39. Examples of Application to Endoscopic Surgical Systems> This technology can be applied to various products. For example, the technology disclosed herein (this technology) may be applied to an endoscopic surgical system.

[0283] Figure 51 is a diagram showing an example of a schematic configuration of an endoscopic surgical system to which the technology described herein (the technology) may be applied.

[0284] Figure 51 illustrates a surgeon (physician) 11131 performing surgery on a patient 11132 on a patient bed 11133 using an endoscopic surgical system 11000. As shown in the figure, the endoscopic surgical system 11000 consists of an endoscope 11100, other surgical instruments 11110 such as an insufflation tube 11111 and an energy treatment device 11112, a support arm device 11120 for supporting the endoscope 11100, and a cart 11200 equipped with various devices for endoscopic surgery.

[0285] The endoscope 11100 consists of a barrel 11101, the tip of which is inserted into the body cavity of the patient 11132 for a predetermined length, and a camera head 11102 connected to the base end of the barrel 11101. In the illustrated example, the endoscope 11100 is shown as a so-called rigid endoscope having a rigid barrel 11101, but the endoscope 11100 may also be configured as a so-called flexible endoscope having a flexible barrel.

[0286] An opening into which an objective lens is fitted is provided at the tip of the microscope tube 11101. A light source device 11203 is connected to the endoscope 11100, and the light generated by the light source device 11203 is guided to the tip of the microscope tube by a light guide extending inside the microscope tube 11101, and is irradiated through the objective lens towards the object to be observed inside the body cavity of the patient 11132. The endoscope 11100 may be a straight-viewing endoscope, an oblique-viewing endoscope, or a side-viewing endoscope.

[0287] The camera head 11102 contains an optical system and an image sensor. Reflected light from the object being observed (observation light) is focused onto the image sensor by the optical system. The image sensor converts the observation light into electrical signals, generating an electrical signal corresponding to the observation light, i.e., an image signal corresponding to the observed image. This image signal is transmitted as RAW data to the camera control unit (CCU) 11201.

[0288] The CCU 11201 is composed of a CPU (Central Processing Unit), a GPU (Graphics Processing Unit), and other components, and comprehensively controls the operation of the endoscope 11100 and the display device 11202. Furthermore, the CCU 11201 receives an image signal from the camera head 11102 and performs various image processing operations on that image signal, such as development processing (demosaic processing), to display the image based on that image signal.

[0289] The display device 11202 displays an image based on an image signal that has been processed by the CCU 11201, under control from the CCU 11201.

[0290] The light source device 11203 consists of a light source such as an LED (Light Emitting Diode) and supplies illumination light to the endoscope 11100 when photographing the surgical area, etc.

[0291] The input device 11204 is an input interface for the endoscopic surgical system 11000. The user can input various types of information and instructions to the endoscopic surgical system 11000 via the input device 11204. For example, the user can input instructions to change the imaging conditions (type of light, magnification, focal length, etc.) of the endoscope 11100.

[0292] The treatment instrument control device 11205 controls the drive of the energy treatment instrument 11112 for purposes such as tissue cauterization, incision, or blood vessel sealing. The insufflation device 11206 injects gas into the body cavity of the patient 11132 via the insufflation tube 11111 to inflate the body cavity for the purpose of securing a field of view by the endoscope 11100 and securing the operator's workspace. The recorder 11207 is a device capable of recording various information related to the surgery. The printer 11208 is a device capable of printing various information related to the surgery in various formats such as text, images, or graphs.

[0293] The light source device 11203 that supplies illumination light to the endoscope 11100 when photographing the surgical area can be configured as a white light source consisting of, for example, an LED, a laser light source, or a combination thereof. When the white light source is configured as a combination of RGB laser light sources, the output intensity and output timing of each color (each wavelength) can be controlled with high precision, so the white balance of the captured image can be adjusted in the light source device 11203. In this case, it is also possible to capture images corresponding to each of the RGB colors in time-division by irradiating the observation target with laser light from each of the RGB laser light sources in time-division and controlling the drive of the image sensor of the camera head 11102 in synchronization with the irradiation timing. According to this method, a color image can be obtained without providing a color filter on the image sensor.

[0294] Furthermore, the light source device 11203 may be controlled to change the intensity of the light it outputs at predetermined time intervals. By controlling the drive of the image sensor of the camera head 11102 in synchronization with the timing of the change in light intensity, images can be acquired in time-division order, and these images can be combined to generate high dynamic range images without so-called black crushing and white clipping.

[0295] Furthermore, the light source device 11203 may be configured to supply light in a predetermined wavelength band corresponding to special light observation. In special light observation, for example, by utilizing the wavelength dependence of light absorption in body tissue and irradiating with narrow-band light compared to the irradiation light used in normal observation (i.e., white light), so-called narrow-band imaging is performed to image predetermined tissues such as blood vessels on the surface of mucosa with high contrast. Alternatively, in special light observation, fluorescence observation may be performed to obtain an image from fluorescence generated by irradiation with excitation light. In fluorescence observation, excitation light is irradiated onto body tissue and fluorescence from the body tissue is observed (autofluorescence observation), or a reagent such as indocyanine green (ICG) is injected into body tissue and excitation light corresponding to the fluorescence wavelength of the reagent is irradiated onto the body tissue to obtain a fluorescence image. The light source device 11203 may be configured to supply narrow-band light and / or excitation light corresponding to such special light observation.

[0296] Figure 52 is a block diagram showing an example of the functional configuration of the camera head 11102 and CCU 11201 shown in Figure 51.

[0297] The camera head 11102 includes a lens unit 11401, an imaging unit 11402, a drive unit 11403, a communication unit 11404, and a camera head control unit 11405. The CCU 11201 includes a communication unit 11411, an image processing unit 11412, and a control unit 11413. The camera head 11102 and the CCU 11201 are connected to each other via a transmission cable 11400 so that they can communicate with each other.

[0298] The lens unit 11401 is an optical system provided at the connection point with the lens barrel 11101. Observation light taken in from the tip of the lens barrel 11101 is guided to the camera head 11102 and then incident on the lens unit 11401. The lens unit 11401 is composed of a combination of multiple lenses, including a zoom lens and a focus lens.

[0299] The imaging unit 11402 is composed of image sensors. The imaging unit 11402 may consist of one image sensor (a so-called single-chip type) or multiple image sensors (a so-called multi-chip type). If the imaging unit 11402 is composed of multiple chips, for example, each image sensor may generate image signals corresponding to RGB, and these may be combined to obtain a color image. Alternatively, the imaging unit 11402 may be configured to have a pair of image sensors for acquiring image signals for the right eye and left eye, respectively, corresponding to 3D (Dimensional) display. By performing 3D display, the surgeon 11131 can more accurately grasp the depth of the biological tissue in the surgical area. In addition, if the imaging unit 11402 is composed of multiple chips, multiple lens units 11401 may also be provided corresponding to each image sensor.

[0300] Furthermore, the imaging unit 11402 does not necessarily have to be located on the camera head 11102. For example, the imaging unit 11402 may be located inside the lens barrel 11101, directly behind the objective lens.

[0301] The drive unit 11403 is composed of actuators and, under control from the camera head control unit 11405, moves the zoom lens and focus lens of the lens unit 11401 along the optical axis by a predetermined distance. This allows the magnification and focus of the image captured by the imaging unit 11402 to be adjusted as appropriate.

[0302] The communication unit 11404 is composed of communication devices for sending and receiving various types of information with the CCU 11201. The communication unit 11404 transmits the image signal obtained from the imaging unit 11402 as RAW data to the CCU 11201 via the transmission cable 11400.

[0303] Furthermore, the communication unit 11404 receives a control signal from the CCU 11201 to control the drive of the camera head 11102 and supplies it to the camera head control unit 11405. The control signal includes information about imaging conditions, such as information to specify the frame rate of the captured image, information to specify the exposure value at the time of imaging, and / or information to specify the magnification and focus of the captured image.

[0304] The imaging conditions such as frame rate, exposure value, magnification, and focus may be specified by the user as appropriate, or they may be automatically set by the control unit 11413 of the CCU 11201 based on the acquired image signal. In the latter case, the endoscope 11100 will be equipped with so-called AE (Auto Exposure), AF (Auto Focus), and AWB (Auto White Balance) functions.

[0305] The camera head control unit 11405 controls the driving of the camera head 11102 based on the control signal received from the CCU 11201 via the communication unit 11404.

[0306] The communication unit 11411 is comprised of a communication device for sending and receiving various types of information with the camera head 11102. The communication unit 11411 receives image signals transmitted from the camera head 11102 via the transmission cable 11400.

[0307] Furthermore, the communication unit 11411 transmits control signals to the camera head 11102 to control the driving of the camera head 11102. Image signals and control signals can be transmitted by telecommunications, optical communications, etc.

[0308] The image processing unit 11412 performs various image processing operations on the image signal, which is RAW data transmitted from the camera head 11102.

[0309] The control unit 11413 performs various controls related to imaging the surgical area, etc., by the endoscope 11100, and the display of the images obtained from imaging the surgical area, etc. For example, the control unit 11413 generates a control signal to control the driving of the camera head 11102.

[0310] Furthermore, the control unit 11413 displays the captured image showing the surgical area, etc., on the display device 11202 based on the image signal processed by the image processing unit 11412. At this time, the control unit 11413 may recognize various objects in the captured image using various image recognition technologies. For example, the control unit 11413 can recognize surgical instruments such as forceps, specific biological sites, bleeding, mist when using the energy treatment device 11112, etc., by detecting the shape and color of the edges of objects included in the captured image. When the control unit 11413 displays the captured image on the display device 11202, it may use the recognition results to superimpose various surgical support information onto the image of the surgical area. By superimposing the surgical support information and presenting it to the surgeon 11131, the burden on the surgeon 11131 can be reduced, and the surgeon 11131 can proceed with the surgery reliably.

[0311] The transmission cable 11400 connecting the camera head 11102 and the CCU 11201 is an electrical signal cable compatible with electrical signal communication, an optical fiber compatible with optical communication, or a composite cable thereof.

[0312] In the illustrated example, communication was performed via a wired connection using a transmission cable 11400, but communication between the camera head 11102 and the CCU 11201 may be performed wirelessly.

[0313] The above describes an example of an endoscopic surgical system to which the technology relating to this disclosure may be applied. The technology relating to this disclosure can be applied to the endoscope 11100, the camera head 11102 (and its imaging unit 11402), etc., among the configurations described above. Specifically, the element device of this disclosure can be applied to the imaging unit 10402. By applying the technology relating to this disclosure to the endoscope 11100, the camera head 11102 (and its imaging unit 11402), etc., it is possible to improve yield and reduce manufacturing costs.

[0314] Here, an endoscopic surgical system has been described as an example, but the technology relating to this disclosure may also be applied to other systems, such as microsurgical systems.

[0315] Furthermore, this technology can also take the following configurations: (1) An element device comprising a laminated structure in which a plurality of substrates having elements are stacked, wherein the laminated structure includes a first region as an element region containing elements of the plurality of substrates, and a second region surrounding the first region, and at least one recess is provided on one surface of the second region in the direction perpendicular to the surface. (2) The element device according to (1), wherein the second region is not provided with a recess for which an electrode pad is arranged. (3) The element device according to (1) or (2), wherein the laminated structure includes a third region having a guard ring on the outer periphery side of the second region. (4) The element device according to any one of (1) to (3), wherein the recess includes a void. (5) The element device according to any one of (1) to (4), wherein the recess is provided with a flexible material, and the flexible material has a Young's modulus lower than that of Si. (6) The element device according to (5), wherein the flexible material is an insulating material or a semi-insulating material. (7) The element device according to any one of (1) to (6), wherein the bottom surface of the recess is located inside any of the plurality of substrates or at the boundary between adjacent substrates. (8) The element device according to any one of (1) to (7), wherein the recess has an angular shape in plan view. (9) The element device according to any one of (1) to (7), wherein the recess has a non-angular shape in plan view. (10) The element device according to any one of (1) to (9), wherein the recess is a groove or a hole. (11) The element device according to any one of (1) to (10), wherein at least one recess is a plurality of recesses. (12) The element device according to (11), wherein the second region surrounds the first region, and the plurality of recesses are arranged along the outer circumference of the first region. (13) The element device according to (11) or (12), wherein the plurality of recesses are arranged to surround the first region. (14) The element device according to (11) or (12), wherein the plurality of recesses are arranged to sandwich the first region. (15) The element device according to any one of (11) to (14), wherein the plurality of recesses are at least three recesses, the first region has at least three corners, and the at least three recesses are each arranged at a position corresponding to the at least three corners.(16) The element device according to any one of (1) to (15), wherein the longitudinal cross-section of the recess is tapered. (17) The element device according to any one of (1) to (16), wherein the longitudinal cross-section of the recess has at least one stepped portion. (18) The element device according to any one of (1) to (17), wherein the longitudinal cross-section of the recess has no angle at the bottom. (19) The element device according to any one of (1) to (18), wherein the element of the plurality of substrates includes a pixel portion having at least one pixel, a processing unit for processing signals from the pixel portion, and a storage unit for storing signals from the pixel portion, at least one of which is a processing unit. (20) The element device according to any one of (3) to (19), wherein a redistribution layer is provided on the other surface of the laminated structure perpendicular to the plane, with its end portion located on the outer circumference side of the guard ring in a plan view. (21) The element device according to any one of (1) to (20), wherein the surface on one side of the laminated structure is the surface of the element device. (22) An electronic device comprising a laminated structure in which a plurality of substrates having elements are laminated, wherein the laminated structure has a first region as an element region containing elements of the plurality of substrates, and a second region surrounding the first region, and at least one recess is provided on the surface on one side of the second region in the direction perpendicular to the surface.

[0316] 10-1, 10-2, 10-3, 10-4, 10-5, 10-6, 10-7, 10-8, 10-9, 10-10, 10-11, 10-12, 10-13, 10-14, 10-15, 10-16, 10-17, 10-18, 10-19, 10-20, 10-21, 10-22, 10-23, 10-24, 10-25, 10-26, 10-27, 10-28, 10-29, 10-30, 10-34: Element device 100: First substrate (substrate) 200: Second substrate (substrate) 300: Third substrate (substrate) LS: Laminated structure A1: First region A2: Second region A3: Third region R: Recess SM: Flexible material GR: Guard ring RDL: Redistribution layer

Claims

1. An element device comprising a laminated structure in which a plurality of substrates having elements are stacked, wherein the laminated structure includes a first region as an element region containing elements of the plurality of substrates, and a second region surrounding the first region, and at least one recess is provided on one surface of the second region in the direction perpendicular to the surface.

2. The device according to claim 1, wherein the second region is not provided with a recess for which an electrode pad is arranged.

3. The element device according to claim 1, wherein the laminated structure includes a third region having a guard ring on the outer periphery of the second region.

4. The element device according to claim 1, wherein the recess includes a void.

5. The device according to claim 1, wherein the recess is provided with a flexible material, and the flexible material has a Young's modulus lower than that of Si.

6. The element device according to claim 5, wherein the flexible material is an insulating material or a semi-insulating material.

7. The element device according to claim 1, wherein the bottom surface of the recess is located inside any of the plurality of substrates or at the boundary between adjacent substrates.

8. The element device according to claim 1, wherein the recess has an angular shape in plan view.

9. The element device according to claim 1, wherein the recess has a non-angular shape in plan view.

10. The element device according to claim 1, wherein the recess is a groove or a hole.

11. The element device according to claim 1, wherein the at least one recess is a plurality of recesses.

12. The element device according to claim 11, wherein the second region surrounds the first region, and the plurality of recesses are arranged along the outer circumference of the first region.

13. The element device according to claim 11, wherein the plurality of recesses are arranged to surround the first region.

14. The element device according to claim 11, wherein the plurality of recesses are at least three recesses, the first region has at least three corners, and the at least three recesses are each positioned to correspond to the at least three corners.

15. The element device according to claim 1, wherein the longitudinal cross-section of the recess is tapered.

16. The element device according to claim 1, wherein the longitudinal cross-section of the recess has at least one stepped portion.

17. The element device according to claim 1, wherein the longitudinal cross-section of the recess has no corners at the bottom.

18. The element device according to claim 1, wherein the elements of the plurality of substrates include a pixel section having at least one pixel, and at least one processing section among a processing section that processes signals from the pixel section and a storage section that stores signals from the pixel section.

19. The element device according to claim 3, wherein a rewiring layer is provided on the other surface of the laminated structure perpendicular to the surface, with its end portion located on the outer circumference side of the guard ring in a plan view.

20. The element device according to claim 1, wherein the surface on one side of the laminated structure is the surface of the element device.

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