Frequency-selective insulating glass for buildings
The architectural insulating glass with frequency-selective patterns on metal thin film layers addresses the interference of Low-E glass with radio waves, enabling controlled signal transmission and absorption for specific bands while maintaining thermal insulation and security.
Patent Information
- Authority / Receiving Office
- WO · WO
- Patent Type
- Applications
- Current Assignee / Owner
- KCC GLASS CORP
- Filing Date
- 2025-02-06
- Publication Date
- 2026-07-09
Smart Images

Figure KR2025001760_09072026_PF_FP_ABST
Abstract
Description
Architectural insulating glass with frequency selectivity
[0001] The present invention relates to insulating glass for construction, and more specifically, to insulating glass for construction having frequency selectivity.
[0002] In modern commercial and residential construction, Low-E (Low-emissivity) glass is widely used for energy saving purposes. Low-E glass is a glass surface coated with an ultra-thin metal layer to reduce heat loss; because it enhances indoor temperature maintenance and energy saving effects, it is particularly widely used as a window or building exterior material. In this regard, Fig. 1 is a conceptual diagram of Low-E glass. As shown in Fig. 1, Low-E glass can prevent indoor heating from escaping to the outside by reflecting solar rays from the outside or allowing visible light to pass through, while ensuring visibility by providing a Low-E coating on at least one surface of the glass window. In other words, the core technology of Low-E glass lies in reducing the loss of indoor heat to the outside through a heat-reflecting metal coating, and generally, such a coating can be composed of silver (Ag) or a metal oxide layer. The low-E coating layer reflects infrared wavelengths from the sun, preventing heat from entering the room in the summer and preventing heat from escaping the room in the winter.
[0003] However, while the introduction of a metal thin film layer in low-e glass offers excellent thermal insulation, it has the disadvantage of interfering with the transmission and reception of radio waves, which are a core element of modern information and communication technology. As illustrated in Fig. 1, the low-e coating can interfere with the transmission of signals from a base station to an indoor wireless terminal, and conversely, it can interfere with the transmission of signals from an indoor wireless terminal to a base station. This may be attributed to the fact that the low-e coating layer also reflects wireless signals.
[0004] To address these issues, removing a portion of the metal thin film layer of insulating glass could be considered; however, since the removal of this layer results in a degradation of thermal insulation performance, it has been difficult to simultaneously satisfy both radio wave transmittance and thermal insulation performance. Furthermore, modern wireless communication systems operate in a wide variety of ways, and the frequency bands used by each system are widely distributed. Consequently, it is not easy to guarantee radio wave transmittance across a diverse range of frequencies, and there may even be situations where maintaining security through radio wave shielding is required for specific frequency bands. In particular, due to various necessities including specific security requirements, there may be cases where it is required not only to shield transmitted radio waves but also to absorb them to minimize reflected signals.
[0005] One objective of the present invention for solving the aforementioned problems is to provide an architectural insulating glass having frequency selectivity capable of controlling the degree of signal transmission and reflection for a specific frequency band while maintaining thermal insulation performance by minimizing the etching area of the insulating metal thin film layer by forming an appropriate pattern on the insulating metal thin film layer provided in the architectural insulating glass.
[0006] Another objective of the present invention for solving the aforementioned problems is to provide an architectural insulating glass having frequency selectivity that allows for the free control of the transmission, absorption, or shielding of radio waves according to a specific frequency band by forming a pattern of an insulating metal thin film layer provided in the architectural insulating glass.
[0007] However, the problem to be solved by the present invention is not limited thereto and may be expanded in various ways without departing from the spirit and scope of the present invention.
[0008] A thermal insulating glass for architecture having frequency selectivity according to an embodiment of the present invention for solving the aforementioned problems may include: a first glass layer; a first insulating metal thin film layer disposed on top of the first glass layer; a polymer bonding layer disposed on top of the first insulating metal thin film layer; a second insulating metal thin film layer disposed on top of the polymer bonding layer; and a second glass layer disposed on top of the second insulating metal thin film layer. Here, the first insulating metal thin film layer comprises a plurality of first unit cells arranged within the plane of the first insulating metal thin film layer, and the second insulating metal thin film layer comprises a plurality of second unit cells arranged within the plane of the second insulating metal thin film layer, at least some of the first unit cells comprise a first pattern, at least some of the second unit cells comprise a second pattern, and at least some of the first unit cells or the second unit cells may have a region other than the slit provided in the first pattern or the second pattern formed as a metal mesh structure.
[0009] According to one aspect, the insulating glass for architecture having the frequency selectivity described above may be configured to absorb a signal of a predetermined absorption frequency band.
[0010] According to one aspect, the metal mesh structure may be configured to increase the electromagnetic wave absorption rate of the insulating glass for architecture having the frequency selectivity compared to the case where at least some of the first unit cells or second unit cells do not include the metal mesh structure.
[0011] According to one aspect, the metal mesh structure may be configured to increase the bandwidth of the signal absorbed by the architectural insulating glass having the frequency selectivity compared to the case where at least some of the first unit cells or second unit cells do not include the metal mesh structure.
[0012] According to one aspect, the first pattern may include: a cross pattern having a longitudinal pole pattern and a transverse pole pattern intersecting the longitudinal pole pattern; a plurality of flange patterns each coupled to a plurality of ends of the cross pattern and extending in a direction orthogonal to the cross pattern at a point of coupling with the cross pattern; and an edge slit formed to surround the cross pattern and the plurality of flange patterns.
[0013] According to one aspect, the second pattern may include a square slit having a predetermined width and size.
[0014] According to one aspect, the square slit comprises an outer square slit; and an inner square slit disposed inside the outer square slit; wherein the outer square slit is configured to transmit or absorb a signal of a first absorption frequency band, and the inner square slit is configured to transmit or absorb a signal of a second absorption frequency band.
[0015] According to one aspect, the first pattern may be configured such that the absorption rate of the signal in the frequency band being absorbed and the frequency band of the absorbed signal are changed by changing the width of the edge slit, such that the frequency band of the signal being absorbed or transmitted is changed by changing the length of the flange pattern, and such that the frequency band of the signal being absorbed or transmitted is changed by changing the distance between the pole pattern parallel to the flange pattern of the cross pattern and the flange pattern.
[0016] According to one aspect, the second pattern may be configured such that the frequency bandwidth of the transmitted signal is changed by changing the width of the square slit, and the frequency bandwidth of the absorbed signal is changed by changing the length of one side of the square slit.
[0017] According to one aspect, the metal mesh structure comprises a plurality of metal strips, the line width of the metal strips is 30 μm, and the spacing between the plurality of metal strips may be 0.2 mm.
[0018]
[0019] A thermal insulating glass for architecture having frequency selectivity according to another embodiment of the present invention for solving the aforementioned problems may comprise: a first glass layer; a first insulating metal thin film layer disposed on top of the first glass layer; a polymer bonding layer disposed on top of the first insulating metal thin film layer; a second insulating metal thin film layer disposed on top of the polymer bonding layer; and a second glass layer disposed on top of the second insulating metal thin film layer. Here, the first insulating metal thin film layer comprises a plurality of first unit cells arranged within the plane of the first insulating metal thin film layer, and the second insulating metal thin film layer comprises a plurality of second unit cells arranged within the plane of the second insulating metal thin film layer, and at least some of the first unit cells may comprise a first pattern of a reference scale; and a first pattern of a first reduction scale disposed in at least one blank area provided in the first pattern of the reference scale.
[0020] According to one aspect, the insulating glass for architecture having the frequency selectivity described above may be configured to absorb a signal of a predetermined absorption frequency band.
[0021] According to one aspect, at least some of the first unit cells may further include a first pattern of a second reduction scale disposed in at least one blank area provided in the first pattern of the first reduction scale.
[0022] According to one aspect, the first pattern of the first reduction scale may be configured to increase the electromagnetic wave absorption of the insulating glass for architecture having the frequency selectivity compared to the case where the first pattern of the first reduction scale is not provided.
[0023] According to one aspect, the first pattern of the first reduction scale and the second pattern of the second reduction scale may be configured to increase the radio wave absorption of the architectural insulating glass having frequency selectivity and to increase the bandwidth of the signal absorbed by the architectural insulating glass having frequency selectivity compared to the case where the first pattern of the first reduction scale and the second pattern of the second reduction scale are not provided.
[0024] According to one aspect, the first pattern may include: a cross pattern having a longitudinal pole pattern and a transverse pole pattern intersecting the longitudinal pole pattern; a plurality of flange patterns each coupled to a plurality of ends of the cross pattern and extending in a direction orthogonal to the cross pattern at a point of coupling with the cross pattern; and an edge slit formed to surround the cross pattern and the plurality of flange patterns.
[0025] According to one aspect, at least some of the second unit cells include a second pattern, and the second pattern may include a square slit having a predetermined width and size.
[0026] According to one aspect, the square slit comprises an outer square slit; and an inner square slit disposed inside the outer square slit; wherein the outer square slit is configured to transmit or absorb a signal of a first absorption frequency band, and the inner square slit is configured to transmit or absorb a signal of a second absorption frequency band.
[0027] According to one aspect, the first pattern of the first reduction scale may be configured to have a size of 1 / 4 of the first pattern of the reference scale, and the second pattern of the second reduction scale may be configured to have a size of 1 / 16 of the first pattern of the reference scale.
[0028] The disclosed technology may have the following effects. However, this does not mean that a specific embodiment must include all of the following effects or only the following effects; therefore, the scope of the rights of the disclosed technology should not be understood as being limited by this.
[0029] According to the architectural insulating glass having frequency selectivity according to one embodiment of the present invention described above, by forming an appropriate pattern on the insulating metal thin film layer provided in the architectural insulating glass, the etching area of the insulating metal thin film layer is minimized, thereby allowing the degree of signal transmission and reflection for a specific frequency band to be controlled while maintaining insulating performance.
[0030] In addition, according to the architectural insulating glass having frequency selectivity according to one embodiment of the present invention described above, the transmission, absorption, or shielding of radio waves can be freely controlled according to a specific frequency band by forming a pattern of an insulating metal thin film layer provided in the architectural insulating glass.
[0031] Furthermore, the architectural insulating glass having frequency selectivity according to the embodiments of the present invention can be designed so that the propagation characteristics for a specific frequency are minimized from being outwardly visible, making it impossible to visually determine which frequency the insulating glass is intended to transmit or which frequency it is intended to shield or absorb. Accordingly, this has the advantageous effect of further enhancing the security of buildings equipped with insulating glass.
[0032] Figure 1 is a conceptual diagram of Low-E glass.
[0033] Figure 2 shows an exemplary double-layer structure of Low-E glass.
[0034] Figure 3 shows the S-parameter measurement results according to single Low-E glass.
[0035] Figure 4 shows the S-parameter measurement results according to double low-e glass.
[0036] Figure 5 shows the radio wave absorption rate of ordinary glass according to the frequency band.
[0037] Figure 6 shows the radio wave absorption rate of Low-E glass according to the frequency band.
[0038] FIG. 7 shows an exemplary laminated structure of architectural insulating glass having frequency selectivity according to one embodiment of the present invention.
[0039] FIG. 8 shows an exemplary structure of an insulating glass for architecture having the frequency selectivity of FIG. 7.
[0040] FIG. 9 shows the arrangement of the first unit cell within the plane of the first insulating metal thin film layer of FIG. 7 to 8.
[0041] FIG. 10 shows the arrangement of the second unit cell within the plane of the second insulating metal thin film layer of FIG. 7 to 8.
[0042] FIG. 11 shows a Jerusalem-square slit pattern structure according to one embodiment of the present invention.
[0043] Figure 12 shows the radio wave absorption rate according to the pattern structure of Figure 11.
[0044] FIG. 13 illustrates a pattern structure including a metal mesh structure according to one embodiment of the present invention.
[0045] Figure 14 shows the radio wave absorption rate according to the pattern structure of Figure 13.
[0046] FIG. 15 shows a stepwise reduction scale pattern structure according to one embodiment of the present invention.
[0047] Figure 16 is a step-by-step partial enlarged view of the reduced-scale pattern structure in the pattern structure of Figure 15.
[0048] FIG. 17 illustrates a pattern structure including a reduced scale pattern according to one embodiment of the present invention.
[0049] Figure 18 shows the radio wave absorption rate according to the pattern structure of Figure 17.
[0050] The present invention is capable of various modifications and may have various embodiments, and specific embodiments are illustrated in the drawings and described in detail.
[0051] However, this is not intended to limit the invention to specific embodiments, and it should be understood that it includes all modifications, equivalents, and substitutions that fall within the spirit and scope of the invention.
[0052] Terms such as "first," "second," etc., may be used to describe various components, but said components should not be limited by said terms. Such terms are used solely for the purpose of distinguishing one component from another. For example, without departing from the scope of the present invention, the first component may be named the second component, and similarly, the second component may be named the first component. The term "and / or" includes a combination of a plurality of related described items or any of a plurality of related described items.
[0053] When it is stated that one component is "connected" or "connected" to another component, it should be understood that while it may be directly connected or connected to that other component, there may also be other components in between. On the other hand, when it is stated that one component is "directly connected" or "directly connected" to another component, it should be understood that there are no other components in between.
[0054] The terms used in this application are used merely to describe specific embodiments and are not intended to limit the invention. The singular expression includes the plural expression unless the context clearly indicates otherwise. In this application, terms such as "comprising" or "having" are intended to specify the presence of the features, numbers, steps, actions, components, parts, or combinations thereof described in the specification, and should be understood as not precluding the existence or addition of one or more other features, numbers, steps, actions, components, parts, or combinations thereof.
[0055] Unless otherwise defined, all terms used herein, including technical or scientific terms, have the same meaning as generally understood by those skilled in the art to which the present invention pertains. Terms such as those defined in commonly used dictionaries should be interpreted as having a meaning consistent with their meaning in the context of the relevant technology, and should not be interpreted in an ideal or overly formal sense unless explicitly defined in this application.
[0056] Hereinafter, preferred embodiments of the present invention will be described in more detail with reference to the attached drawings. In order to facilitate an overall understanding of the present invention, the same reference numerals are used for identical components in the drawings, and redundant descriptions of identical components are omitted.
[0057]
[0058] outline
[0059] As mentioned above, Low-E (Low-emissivity) glass, or low-emissivity glass, is widely used for energy saving purposes in modern commercial and residential construction. Low-E glass is a glass surface coated with an ultra-thin metal layer to reduce heat release; because it enhances indoor temperature maintenance and energy saving effects, it is particularly widely used as a window or building exterior material. In this regard, Fig. 1 is a conceptual diagram of Low-E glass. As shown in Fig. 1, Low-E glass can prevent indoor heating from escaping to the outside by reflecting solar rays from the outside or allowing visible light to pass through, while ensuring visibility by providing a Low-E coating on at least one surface of the glass window. In other words, the core technology of Low-E glass lies in reducing the loss of indoor heat to the outside through a heat-reflecting metal coating, and generally, such a coating can be composed of silver (Ag) or a metal oxide layer. The low-E coating layer reflects infrared wavelengths from the sun, preventing heat from entering the room in the summer and preventing heat from escaping the room in the winter.
[0060] FIG. 2 illustrates an exemplary double-layer structure of low-e glass. As illustrated in FIG. 2, architectural insulating glass having frequency selectivity according to embodiments of the present invention may be configured to have a double-layer structure. For example, the double-layer structure may include an outer glass (10) and an inner glass (20), and may be configured to insert a spacer (31) between the outer glass and the inner glass and secure it with a sealant (33). An air layer may be disposed between the outer glass (10) and the inner glass (20), and the air layer may be filled with ordinary air or argon (Ar).
[0061] According to one aspect, a low-e coating may be provided on the inner surface (11) of the outer glass (10) and / or the inner surface (21) of the inner glass (20), but is not limited thereto. According to one aspect, an insulating glass for architecture having frequency selectivity may be implemented as a single-layer glass having a first glass layer (100) and a metal thin film layer (200). Alternatively, an insulating glass for architecture having frequency selectivity according to embodiments of the present invention may have a plurality of glass layers, such as a multilayer structure as shown in FIG. 2, for example, and an insulating metal thin film layer may be provided on at least one of such glass layers. In addition, although the architectural insulating glass having frequency selectivity according to the embodiments of the present invention is described as having an insulating metal thin film layer, the technical concept of the present invention is not limited to having only an insulating metal thin film layer, and it should be understood that an embodiment having a low-E coating layer comprising a plurality of layers, such as a metal thin film layer, a dielectric layer, and a coating layer, is included in the technical concept of the present invention.
[0062]
[0063] Meanwhile, while the introduction of a metal thin film layer in low-e glass offers excellent thermal insulation, it has the disadvantage of interfering with the transmission and reception of radio waves, which are a core element of modern information and communication technology. As illustrated in Fig. 1, the low-e coating can interfere with the transmission of signals from a base station to an indoor wireless terminal, and conversely, it can interfere with the transmission of signals from an indoor wireless terminal to a base station. This may be attributed to the fact that the low-e coating layer also reflects wireless signals.
[0064] FIG. 3 shows the S-parameter measurement results for single Low-E glass, and FIG. 4 shows the S-parameter measurement results for double Low-E glass. Samples #1 to #4 in FIG. 3 and samples #5 to #6 in FIG. 4 represent various commercially available Low-E glass models. S 21 Based on the results of parameter measurements, the basic transmission performance of Low-E glass was verified. It was confirmed that both single Low-E glass with a single Low-E coating layer and double Low-E glass with multiple Low-E coating layers exhibit a propagation loss of approximately 20 dB to 30 dB, although varying slightly depending on the frequency band, as illustrated in FIGS. 3 and 4. In other words, even if a signal of 100 dB reaches a building from the outside, only about 70 dB of signal is received indoors, resulting in a significant propagation loss of more than one-thousandth. To resolve the resulting dead zones, the number of base stations allocated to buildings is increased. This not only creates cost issues for expanding communication infrastructure but also leads to problems where energy consumption and carbon emissions increase due to the Low-E glass introduced for energy saving purposes.
[0065] In other words, Low-E glass has a multilayer thin coating consisting of metal and dielectric layers, which is visually transparent in the visible light band but has the characteristic of reflecting heat, while also having the problem of attenuating signals in wireless communication bands such as RF signals.
[0066] To address these issues, removing a portion of the metal thin film layer of insulating glass could be considered; however, since the removal of this layer results in a degradation of thermal insulation performance, it has been difficult to simultaneously satisfy both radio wave transmittance and thermal insulation performance. Furthermore, modern wireless communication systems operate in a wide variety of ways, and the frequency bands used by each system are widely distributed. Consequently, it is not easy to guarantee radio wave transmittance across a diverse range of frequencies, and there may even be situations where maintaining security through radio wave shielding is required for specific frequency bands. In particular, due to various necessities including specific security requirements, there may be cases where it is required not only to shield transmitted radio waves but also to absorb them to minimize reflected signals.
[0067]
[0068] The present invention is intended to solve such problems, and according to embodiments of the present invention, it is possible to provide an insulating glass for architecture having frequency selectivity that improves or weakens signals in a specific frequency band by using a Frequency Selective Surface (FSS) on the coating layer of Low-E glass, for example.
[0069] For example, according to an architectural insulating glass having frequency selectivity according to one embodiment of the present invention, by forming an appropriate pattern on an insulating metal thin film layer provided in the architectural insulating glass, the etching area of the insulating metal thin film layer is minimized, thereby allowing the degree of transmission or reflection of a signal for a specific frequency band to be controlled while maintaining insulating performance.
[0070] Furthermore, according to the architectural insulating glass having frequency selectivity according to one embodiment of the present invention described above, the transmission, absorption, or shielding of radio waves can be freely controlled according to a specific frequency band by forming a pattern of an insulating metal thin film layer provided in the architectural insulating glass. That is, it is possible to transmit signals of a certain frequency band better than conventional low-E glass, and to absorb or shield signals of other frequency bands so that they are transmitted less well than conventional low-E glass. In other words, the architectural insulating glass having frequency selectivity according to an embodiment of the present invention can have discriminability or selectivity for signals of a specific frequency. For example, it is possible to discriminate according to the type of communication system, such as transmitting Wi-Fi signals but not transmitting 3GPP wireless communication signals, and it is also possible to discriminate signals according to the network operator, such as transmitting signals from a first carrier but not transmitting signals from a second carrier. In any case, the pattern provided on the metal thin film layer can be designed so that the etching area of the insulating metal thin film layer is minimized, thereby enabling both frequency selectivity and thermal insulation.
[0071] Furthermore, architectural insulating glass having frequency selectivity according to embodiments of the present invention can be designed so that the propagation characteristics of the architectural insulating glass are not outwardly visible, such as patterns for transmitting specific frequencies and patterns for absorbing or shielding them, thereby making it impossible to visually determine which frequencies the insulating glass is intended to transmit or which frequencies it is intended to shield or absorb. Accordingly, this has the advantageous effect of further enhancing the security of buildings equipped with insulating glass.
[0072] More specifically, the need for shielding wireless signals in specific frequency bands is also emerging in various ways, such as for defense against EMP attacks and the establishment of security systems. According to the architectural insulating glass equipped with frequency selectivity in accordance with an embodiment of the present invention, it is possible to configure it so that signals in a specific frequency band are shielded more effectively than in general low-E glass through the pattern design of a metal thin film layer. Furthermore, it is possible to design patterns for shielding a specific frequency band, patterns for shielding another frequency band, or patterns designed to facilitate the transmission of wireless signals, so that they have only minute external differences from one another. Therefore, even if a building equipped with architectural insulating glass equipped with frequency selectivity is visually inspected, it is impossible to recognize whether the building is equipped with security facilities or is equipped to facilitate the transmission and reception of wireless signals; in particular, it is impossible to determine which frequency is being shielded, thereby allowing for preparation against potential security attacks.
[0073] Meanwhile, the architectural insulating glass having frequency selectivity according to the present invention as described above is designed by taking into account the thickness of the metal thin film layer of commonly used architectural insulating glass. That is, a pattern for frequency selection is designed by taking into account the thickness of, for example, 10 nm to 40 nm of the metal thin film layer included in the low-E coating layer of low-E glass, thereby making it possible to provide architectural insulating glass having frequency selectivity that can guarantee actual mass production and commercialization possibilities.
[0074] Hereinafter, an insulating glass for construction having frequency selectivity according to embodiments of the present invention will be described in more detail with reference to the drawings.
[0075]
[0076] Radio wave absorber
[0077] As mentioned above, there may be cases where it is required to absorb radio waves to minimize reflected signals as well as to shield transmitted radio waves, due to various needs such as meeting specific security requirements.
[0078] In this regard, the absorption rate of radio waves can be quantified in the following way.
[0079]
[0080] Absorption rate = 1 - |S 21 | 2 - |S 11 | 2
[0081]
[0082] That is, the absorption rate of radio waves can be determined by subtracting the reflected and transmitted signals from the total signal. In this regard, Fig. 5 shows the absorption rate of radio waves according to the frequency band of ordinary glass, and Fig. 6 shows the absorption rate of radio waves according to the frequency band of Low-E glass. As shown in Figs. 5 and 6, conventional commercial glass has a relatively high radio wave transmittance, and Low-E glass with a fine metal coating on the surface has a somewhat high reflectivity due to the surface metal coating, but Low-E glass equipped with the function of absorbing radio waves has not yet been provided. As shown in Fig. 6, even in the frequency band of approximately 6 GHz, where the absorption rate is relatively high in Low-E glass, the absorption rate is only about 19%.
[0083] Conventional research on Low-E based glass is focused on increasing transmission efficiency, but most studies do not take into account the actual metal coating thickness (10–30 nm). Furthermore, there is no mention yet of the directionality for controlling the absorption rate of Low-E glass.
[0084] Conventional frequency selective surface (FSS)-based absorbers have the disadvantage of being difficult to commercialize due to the use of complex processes (e.g., multilayer structures / pyramid structures) or materials with high processing costs (graphene, ITO [Indium tin oxide]). Therefore, absorbers for radio waves are used only in limited applications, such as specialized facilities, and have limitations such as reduced transparency and durability issues due to material limitations.
[0085] A thermal insulation glass for architecture equipped with frequency selectivity according to one embodiment of the present invention is intended to solve such problems, and, for example, can freely control frequency selectivity and radio wave absorption and transmission by adopting a structure that combines the concepts of Low-E glass and laminated glass. In addition, a frequency selectivity surface (FSS) structure can be applied to the surface coating film of Low-E glass to impart radio wave absorption and transmission characteristics.
[0086] More specifically, but not limitedly, according to one embodiment of the present invention, an insulating glass for architecture having frequency selectivity is proposed, which has very low reception efficiency by cutting off a very small area of the coating surface of the Low-E glass.
[0087] In addition, if the low reception efficiency of conventional Low-E glass is due to the reflection effect caused by the coating surface, then in the case of architectural insulating glass having frequency selectivity according to one embodiment of the present invention, it is possible to absorb radio waves and utilize it for a higher level of security glass.
[0088] Furthermore, while conventional radio wave absorbers required the use of expensive materials such as ITO and graphene or complex manufacturing processes, the architectural insulating glass equipped with frequency selectivity according to one embodiment of the present invention achieves performance using only a metal thin film layer and relatively economical materials such as glass; thus, unlike other existing commercial absorbers, it is possible to secure high transparency and apply it to real life.
[0089] According to one aspect, a flexible security glass having the ability to block radio waves only at an intended frequency can be proposed by simultaneously controlling transmission and absorption characteristics at a desired frequency through a combination of patterns of various characteristics.
[0090] Hereinafter, an insulating glass for construction having frequency selectivity according to one embodiment of the present invention will be described in more detail with reference to the drawings.
[0091]
[0092] Architectural insulating glass with frequency selectivity
[0093] FIG. 7 shows an exemplary laminated structure of architectural insulating glass having frequency selectivity according to an embodiment of the present invention, and FIG. 8 shows an exemplary structure of architectural insulating glass having frequency selectivity according to FIG. 7. Hereinafter, architectural insulating glass having frequency selectivity according to an embodiment of the present invention will be described in more detail with reference to FIG. 7 and FIG. 8.
[0094] As illustrated in FIGS. 7 and 8, an insulating glass for architecture (1000) having frequency selectivity according to one embodiment of the present invention may include a first glass layer (100), a first insulating metal thin film layer (200) disposed on top of the first glass layer, a polymer bonding layer (300) disposed on top of the first insulating metal thin film layer, a second insulating metal thin film layer (400) disposed on top of the polymer bonding layer, and a second glass layer (500) disposed on top of the second insulating metal thin film layer.
[0095] Note that the first insulating metal thin film layer (200) may, for example, be coated with silver (Ag) paste on the first glass layer (100), but is not limited thereto, and any metal material may be used to form the first insulating metal thin film layer (200). As a non-limiting example, the thickness of the first insulating metal thin film layer (200) may be 10 to 40 μm, but is not limited thereto.
[0096] Additionally, it should be noted that the second insulating metal thin film layer (400) may, for example, be coated with silver (Ag) paste on the second glass layer (500), but is not limited thereto, and any metal material may be used to form the second insulating metal thin film layer (400). As a non-limiting example, the thickness of the second insulating metal thin film layer (400) may be 10 to 40 μm, but is not limited thereto.
[0097] As described above, according to one aspect, the architectural insulating glass (1000) having frequency selectivity may be Low-E glass, but is not limited thereto. Furthermore, the technical concept of the present invention is not limited to having only the first metal thin film layer (200) and / or the second insulating metal thin film layer (400), and insulating glass having a Low-E coating layer including a metal thin film layer together with various additional layers such as a dielectric layer or a polygel coating should also be understood to be included in the technical concept of the present invention.
[0098] As a non-limiting example, the thickness of the first glass layer (100) and the second glass layer (500) may be 5 mm, the thickness of the polymer bonding layer (300) may be 0.76 mm, and the thickness of the first insulating metal thin film layer (200) and the second insulating metal thin film layer (400) may be 10 to 30 nm, preferably 20 µm, but is not limited thereto.
[0099] According to one aspect, the polymer bonding layer (300) may be polyvinyl-butyral (PVB), but is not limited thereto. Also, as a non-limiting example, the dielectric constant of the polymer bonding layer (300) may be 3.2, the permeability may be 1, and the loss tangent may be 0.01, but is not limited thereto.
[0100] As illustrated in FIGS. 7 and 8, an architectural insulating glass (1000) having frequency selectivity according to one embodiment of the present invention may adopt a structure that combines, for example, the concepts of Low-E glass and laminated glass, thereby allowing for free control of frequency selectivity and the absorption and transmission of radio waves. Additionally, a frequency selectivity surface (FSS) structure may be applied to the surface coating film of Low-E glass to impart characteristics of radio wave absorption and transmission.
[0101]
[0102] In this regard, FIG. 9 shows the arrangement of a first unit cell within the plane of the first insulating metal thin film layer of FIG. 7, and FIG. 10 shows the arrangement of a second unit cell within the plane of the second insulating metal thin film layer of FIG. 7.
[0103] As illustrated in FIG. 9, the first insulating metal thin film layer (200) may include a plurality of first unit cells (210-1, ..., 210-n) arranged within the plane of the first insulating metal thin film layer (200). Here, the plane of the first insulating metal thin film layer may refer to the surface facing an optical or wireless signal when the first insulating metal thin film layer is positioned, as illustrated in FIG. 9, rather than the side of the first insulating metal thin film layer as illustrated in FIG. 7, for example. According to one aspect, each first unit cell may be formed over the entire thickness direction area extending from the front to the back of the first insulating metal thin film layer (200), but is not limited thereto. According to one aspect, a form in which the pattern of the unit cells is formed only partially in the thickness direction of the first insulating metal thin film layer (200) should also be understood to be included within the technical scope of the present invention.
[0104] As illustrated in FIG. 9, a plurality of first unit cells may be included within the plane of the first insulating metal thin film layer (200) in an arrangement of a plurality of rows and / or columns, such as, for example, n x n. According to one aspect, the first unit cells may be placed over the entire area of the first insulating metal thin film layer (200), and according to another aspect, they may be placed only over at least a portion of the area of the first insulating metal thin film layer (200). According to one aspect, by partially placing the unit cells in a predetermined area of the first insulating metal thin film layer (200), at least one of selective transmission, absorption, or shielding for a specific frequency may be achieved while ensuring the thermal insulation performance of the insulating glass for architecture having frequency selectivity.
[0105] As illustrated in FIG. 10, the second insulating metal thin film layer (400) may include a plurality of second unit cells (410-1, ..., 410-n) arranged within the plane of the second insulating metal thin film layer (400). Here, the plane of the second insulating metal thin film layer may refer to the surface facing an optical or wireless signal when the second insulating metal thin film layer is positioned, as illustrated in FIG. 10, rather than the side of the second insulating metal thin film layer as illustrated in FIG. 7, for example. According to one aspect, each second unit cell may be formed over the entire thickness direction area extending from the front to the back of the second insulating metal thin film layer (400), but is not limited thereto. According to one aspect, a form in which the pattern of the unit cells is formed only partially in the thickness direction of the second insulating metal thin film layer (400) should also be understood to be included within the technical scope of the present invention.
[0106] As illustrated in FIG. 10, a plurality of second unit cells may be included within the plane of the second insulating metal thin film layer (400) in an arrangement of a plurality of rows and / or columns, for example, n x n. According to one aspect, the second unit cells may be placed over the entire area of the second insulating metal thin film layer (400), and according to another aspect, they may be placed only over at least a portion of the area of the second insulating metal thin film layer (400). According to one aspect, by partially placing the unit cells in a predetermined area of the second insulating metal thin film layer (200), at least one of selective transmission, absorption, or shielding for a specific frequency may be achieved while ensuring the thermal insulation performance of the insulating glass for architecture having frequency selectivity.
[0107]
[0108] Hereinafter, frequency selectivity patterns formed in a unit cell according to embodiments of the present invention will be described in more detail. Here, it should be noted that the patterns formed in the unit cell may be understood, for example, as a frequency selective surface (FSS) or a metasurface, but are not limited to such names.
[0109] In this regard, for architectural insulating glass having frequency selectivity, such as employing a multilayer structure, a low-reflection coating layer including first and second metal thin film layers can be formed between a first glass layer (100) and a second glass layer (500), as shown in FIG. 7. The insulating metal thin film layers according to embodiments of the present invention may be included in such a low-reflection coating layer, and the frequency selectivity patterns formed in the unit cell have the special characteristic of being arranged adjacent to a plurality of glass layers. Furthermore, since it is required to be formed to have a very thin thickness, for example considering visibility, it is highly likely that the target frequency selectivity will not be achieved if a conventional FSS design is followed in which a metal layer of a certain thickness or more is provided. In addition, in a conventional FSS design, a metal layer having a pattern is required to be placed at the outermost edge. In the case of a pattern having frequency selectivity embedded in a double-layered insulating glass as shown in FIG. 7, particularly considering the general form in which a low-e coating layer is formed on the inner surface of the double-layered glass, a polymer bonding layer, another metal thin film layer, and a glass layer are provided on both sides of the metal thin film layer. Therefore, if a conventional FSS design is followed, frequency selectivity under desired conditions may not be achieved. Accordingly, the patterns of the metal thin film layer having frequency selectivity according to the embodiment of the present invention described below are designed to achieve the target frequency selectivity while maintaining the basic performance of the insulating glass, taking into account such specific characteristics.
[0110]
[0111] Hereinafter, in this description, the longitudinal direction may refer to the height direction when, for example, architectural insulating glass having frequency selectivity according to embodiments of the present invention is placed in a building, but is not limited thereto. Hereinafter, in this description, 'longitudinal direction' and 'transverse direction' may be used to refer to different directions that are orthogonal to each other. For example, 'longitudinal direction' may be referred to as the 'first direction' and 'transverse direction' may be referred to as the 'second direction'. In addition, for convenience of explanation, the vertical direction in the drawing may be referred to as the vertical direction, and the horizontal direction in the drawing may be referred to as the horizontal direction. Furthermore, the 'first vertical direction' may be referred to as the 'upper direction' in the drawing, the 'second vertical direction' as the 'lower direction' in the drawing, the 'first horizontal direction' as the 'left direction' in the drawing, and the 'second horizontal direction' as the 'right direction' in the drawing. However, this is merely for convenience of explanation and should be understood that the specific description of a particular direction does not constitute a restrictive interpretation of the technical concept of the present invention.
[0112]
[0113] Jerusalem - Square slit pattern
[0114] FIG. 11 shows a Jerusalem-square slit pattern structure according to one embodiment of the present invention.
[0115] According to one aspect of the present invention, as illustrated in FIG. 11, at least some (2300a) of the first unit cells (210) provided in the first insulating metal thin film layer (200) may include a cross pattern (2310, 2320), a flange pattern (2331, 2333, 2335, 2337), and an edge slit (2340).
[0116] More specifically, but not limitedly, the cross pattern comprises a longitudinal pole pattern (2320) and a transverse pole pattern (2310) that intersects the longitudinal pole pattern. The longitudinal pole pattern (2320) and the transverse pole pattern (2310) may be orthogonal to each other, but are not limited thereto.
[0117] As illustrated in FIG. 11, a plurality of flange patterns (2331, 2333, 2335, 2337) may each be joined to a plurality of ends of a cross pattern. Here, the flange patterns (2331, 2333, 2335, 2337) may be arranged to extend in a direction orthogonal to the cross pattern at the point of joining with the cross pattern, but are not limited thereto. Additionally, the longitudinal midpoint of each flange pattern (2331, 2333, 2335, 2337) may be joined to the cross pattern, but is not limited thereto.
[0118] More specifically, but not limitedly, flange patterns (2333, 2337) may be extended longitudinally from both ends of the transverse pole pattern (2310) and combined with the transverse pole pattern (2310). Additionally, flange patterns (2331, 2335) may be extended transversely from both ends of the longitudinal pole pattern (2320) and combined with the longitudinal pole pattern (2320).
[0119] As shown in FIG. 11, the edge slit (2340) can be formed to surround the cross pattern and a plurality of flange patterns as a whole.
[0120] Meanwhile, at least some (2300b) of the second unit cells (410) provided in the second insulating metal thin film layer (400) may include square slits (2350, 2360) having a predetermined width and size.
[0121] According to one aspect, an insulating glass for construction (1000) having frequency selectivity can be configured to absorb a signal of a predetermined absorption frequency band. That is, it can absorb a signal of a specific frequency band.
[0122] More specifically, but not limitedly, either of the first insulating metal thin film layer (200) and the second insulating metal thin film layer (400) may be configured to transmit a signal in an absorption frequency band, and the other of the first insulating metal thin film layer (200) and the second insulating metal thin film layer (400) may be configured to absorb the signal transmitted by either of the first insulating metal thin film layer (200) and the second insulating metal thin film layer (400). In other words, if one insulating metal thin film layer transmits a signal first, the other insulating metal thin film layer may be configured to absorb the transmitted signal.
[0123] According to one aspect, an insulating glass for architecture having frequency selectivity according to one embodiment of the present invention may be configured to transmit a signal of a predetermined transmission frequency band different from the aforementioned absorption frequency band. That is, an insulating glass for architecture having frequency selectivity according to one embodiment of the present invention may be configured to absorb a signal of a specific frequency band and transmit a signal of a different frequency band. In other words, it is possible to implement a frequency-selective low-e glass having both a cutoff frequency and an allowable frequency simultaneously.
[0124] According to one aspect, the first insulating metal thin film layer (200) or the second insulating metal thin film layer (400) may be configured such that the absorption rate and the frequency bandwidth of the absorbed signal are changed by changing the width (2340W) of the edge slit (2340). As a non-limiting example, the absorption rate and bandwidth of the absorbed frequency band may be adjusted by adjusting the loop width.
[0125] Additionally, as a non-limiting example, the target frequency band can be adjusted by adjusting the spacing of the flange patterns (2331, 2333, 2335, 2337). More specifically, the first insulating metal thin film layer (200) or the second insulating metal thin film layer (400) may be configured such that the frequency band of the absorbed or transmitted signal is changed by changing the length (2330L) of the flange patterns (2331, 2333, 2335, 2337). For example, the frequency band of the absorbed or transmitted signal may be changed by changing the longitudinal length of the flange patterns (2333, 2337) or the transverse length of the flange patterns (2331, 2335).
[0126] Alternatively, according to one aspect, the first insulating metal thin film layer (200) or the second insulating metal thin film layer (400) may be configured such that the frequency band of the signal absorbed or transmitted is changed by changing the distance (2310L) between the pole pattern parallel to the cross pattern flange pattern and the flange pattern. As a non-limiting example, the frequency band of the signal absorbed or transmitted may be changed by changing the distance between the transverse pole pattern (2310) and the flange pattern (2331) or flange pattern (2335), or the distance between the longitudinal pole pattern (2320) and the flange pattern (2333) or flange pattern (2337).
[0127] As illustrated in FIG. 11, according to one aspect, the square slit may include an outer square slit (2350) and an inner square slit (2360) disposed inside the outer square slit. Here, the outer square slit (2350) may be configured to transmit or absorb a signal of a first absorption frequency band, and the inner square slit (2360) may be configured to transmit or absorb a signal of a second absorption frequency band. However, the technical concept of the present invention is not limited thereto, and a single square slit may be provided to perform absorption for a single frequency band, or three or more square slits may be provided to perform absorption for three or more frequency bands. Furthermore, the shape of the square slit according to the embodiments of the present invention is not necessarily limited to a square shape, and slits of various shapes, such as a rectangle, should also be included in the technical concept of the present invention.
[0128] Here, the second insulating metal thin film layer (400) can be configured so that the frequency bandwidth of the transmitted signal is changed by changing the width (2350W, 2360W) of the square slit (2350, 2360). As a non-limiting example, the bandwidth can be adjusted by adjusting the width of the loop of the Double Square Loop Pattern. That is, the bandwidth of the transmitted signal can be adjusted according to the width of the slit, and for example, as the width of the slit increases, the transmission bandwidth can be widened.
[0129] Meanwhile, the second insulating metal thin film layer (400) can be configured such that the frequency band of the absorbed signal is changed by changing the length (2350L, 2360L) of one side of the square slit (2350, 2360). As a non-limiting example, the absorption frequency band can be adjusted by adjusting the size of the loop of the Double Square Loop Pattern.
[0130] In addition, it is possible to implement an absorber for dual bands by adjusting the size and width of the square slits (2350, 2360) of the second insulating metal thin film layer (400).
[0131] As a non-limiting example, the length of one side (2300L) of the first unit cell may be 10 mm, the length (2330L) of the flange pattern may be 4.5 mm, the distance (2310L) between the cross pattern and the flange pattern parallel to each other may be 3 mm, and the width (2340W) of the edge slit (2340) may be 0.25 mm, but is not limited thereto.
[0132] In addition, as a non-limiting example, the length of one side (2301L) of the second unit cell may be 10 mm, the length of one side (2350L) of the outer square slit may be 7 mm, the length of one side (2360L) of the inner square slit may be 3 mm, the width (2350W) of the outer square slit may be 0.175 mm, and the width (2360W) of the inner square slit may be 0.1 mm, but is not limited thereto.
[0133] In this regard, FIG. 12 shows the radio wave absorption rate according to the pattern structure of FIG. 11. As shown in FIG. 12, it was confirmed that frequency selectivity can be imparted to the coating surface of Low-E glass by forming a pattern using laser processing. Furthermore, as shown in FIG. 11, it was confirmed that a higher efficiency in radio wave absorption capability was imparted through narrow area cutting by adopting a Jerusalem Loop structure in the first insulating metal thin film layer (200) and a square loop in the second insulating metal thin film layer (400). An radio wave absorption capability of more than 90% was observed in a broadband of an exemplary absorption target frequency band (16.5 GHz to 18 GHz).
[0134] By changing the second insulating metal thin film layer (400) into a square loop, the absorption rate is increased and the absorption rate of the low frequency band (6 GHz) is controlled (60% -> 40%). Compared to the conventional Jerusalem pattern implemented with cross slits having longitudinal slits and transverse slits and flange slits coupled to the ends of cross slits, it is possible to achieve a higher absorption rate (85% -> 90%) and realize broadband absorption capability by adopting the Jerusalem loop structure as shown in FIG. 11.
[0135]
[0136] Metal mesh structure
[0137] According to one aspect of the present invention, an insulating glass for architecture (1000) having frequency selectivity may be configured to absorb signals of a predetermined absorption frequency band. That is, the insulating glass for architecture (1000) according to one aspect of the present invention may be, for example, Low-E glass, and may operate as an absorber for radio waves by using a metal thin film layer provided for insulation on the Low-E glass. For example, it may be configured to absorb signals of a specific frequency band.
[0138] In this regard, as illustrated in FIG. 7 to FIG. 8, an architectural insulating glass (1000) having frequency selectivity according to one embodiment of the present invention may include a first glass layer (100), a first insulating metal thin film layer (200) disposed on top of the first glass layer, a polymer bonding layer (300) disposed on top of the first insulating metal thin film layer, a second insulating metal thin film layer (400) disposed on top of the polymer bonding layer, and a second glass layer (500) disposed on top of the second insulating metal thin film layer.
[0139] Note that the first insulating metal thin film layer (200) may, for example, be coated with silver (Ag) paste on the first glass layer (100), but is not limited thereto, and any metal material may be used to form the first insulating metal thin film layer (200). As a non-limiting example, the thickness of the first insulating metal thin film layer (200) may be 10 to 40 μm, but is not limited thereto.
[0140] Additionally, it should be noted that the second insulating metal thin film layer (400) may, for example, be coated with silver (Ag) paste on the second glass layer (500), but is not limited thereto, and any metal material may be used to form the second insulating metal thin film layer (400). As a non-limiting example, the thickness of the second insulating metal thin film layer (400) may be 10 to 40 μm, but is not limited thereto.
[0141] Additionally, as described above with reference to FIG. 9, the first insulating metal thin film layer (200) may include a plurality of first unit cells (210-1, ..., 210-n) arranged within the plane of the first insulating metal thin film layer (200). Here, the plane of the first insulating metal thin film layer may refer to the surface facing an optical or wireless signal when the first insulating metal thin film layer is positioned, as shown in FIG. 9, rather than the side of the first insulating metal thin film layer as shown in FIG. 7, for example. According to one aspect, each first unit cell may be formed over the entire thickness direction area extending from the front to the back of the first insulating metal thin film layer (200), but is not limited thereto. According to one aspect, a form in which the pattern of the unit cells is formed only partially in the thickness direction of the first insulating metal thin film layer (200) should also be understood to be included within the technical scope of the present invention.
[0142] Meanwhile, as described above with reference to FIG. 10, the second insulating metal thin film layer (400) may include a plurality of second unit cells (410-1, ..., 410-n) arranged within the plane of the second insulating metal thin film layer (400). Here, the plane of the second insulating metal thin film layer may refer to a surface that faces an optical or wireless signal when the second insulating metal thin film layer is positioned, as shown in FIG. 10, rather than a side surface of the second insulating metal thin film layer as shown in FIG. 7, for example. According to one aspect, each second unit cell may be formed over the entire thickness direction area extending from the front to the back of the second insulating metal thin film layer (400), but is not limited thereto. According to one aspect, a form in which the pattern of the unit cell is formed only partially in the thickness direction of the second insulating metal thin film layer (400) should also be understood to be included in the technical scope of the present invention.
[0143]
[0144] In this regard, according to one aspect, in order to maximize radio wave absorption performance as an absorber, emphasize transparency as architectural insulating glass, or secure a wide bandwidth for the absorbed signal, at least some of the first unit cells (210) included in the first insulating metal thin film layer (200) and / or at least some of the second unit cells (410) included in the second insulating metal thin film layer (400) may adopt a metal mesh structure. According to one aspect, the transparency of the first insulating metal thin film layer (200) and / or the second insulating metal thin film layer (400) according to the metal mesh structure can be controlled according to the line width and area of each of the plurality of metal strips constituting the metal mesh structure. Depending on the thickness and area of each of the metal strips of such a metal mesh structure, a wide range of sheet resistance control is possible compared to conventional ITO.
[0145]
[0146] FIG. 13 illustrates a pattern structure including a metal mesh structure according to one embodiment of the present invention.
[0147] In a building insulating glass (1000) according to one aspect of the present invention, as illustrated exemplarily in FIG. 13, at least some of the first unit cells (210) included in the first insulating metal thin film layer (200) may include a first pattern, and at least some of the second unit cells (410) included in the second insulating metal thin film layer (400) may include a second pattern. Here, at least some of the first unit cells (210) (1300a) or at least some of the second unit cells (410) (1300b) may have a region (1310) other than the slit provided in the first pattern or the second pattern formed as a metal mesh structure.
[0148] According to one aspect, the metal mesh structure of the first pattern provided in at least some of the first unit cells (210) or the second unit cells (410) or the region (1310) other than the slit provided in the second pattern may include a plurality of metal strips as shown in FIG. 13. As a non-limiting example, the plurality of metal strips may include transverse metal strips (1311) and longitudinal metal strips (1313), but are not limited thereto. For example, the metal mesh structure may be implemented by diagonal metal strips.
[0149] As shown in FIG. 13, the line width (1310W) of the metal strip may be 30 μm, but is not limited thereto. Also, the spacing (1310G) between the plurality of metal strips may be 0.2 mm, but is not limited thereto.
[0150]
[0151] As illustrated in FIG. 13, at least some (1300a) of the first unit cells (210) included in the first insulating metal thin film layer (200) may have a first pattern. As a non-limiting example, the first pattern may be a Jerusalem pattern as described above with reference to FIG. 11. According to one aspect, as described with reference to FIG. 11, the first pattern may include a cross pattern (2310, 2320), a flange pattern (2331, 2333, 2335, 2337), and an edge slit (2340).
[0152] More specifically, but not limitedly, the cross pattern comprises a longitudinal pole pattern (2320) and a transverse pole pattern (2310) that intersects the longitudinal pole pattern. The longitudinal pole pattern (2320) and the transverse pole pattern (2310) may be orthogonal to each other, but are not limited thereto.
[0153] As illustrated in FIG. 11, a plurality of flange patterns (2331, 2333, 2335, 2337) may each be joined to a plurality of ends of a cross pattern. Here, the flange patterns (2331, 2333, 2335, 2337) may be arranged to extend in a direction orthogonal to the cross pattern at the point of joining with the cross pattern, but are not limited thereto. Additionally, the longitudinal midpoint of each flange pattern (2331, 2333, 2335, 2337) may be joined to the cross pattern, but is not limited thereto.
[0154] More specifically, but not limitedly, flange patterns (2333, 2337) may be extended longitudinally from both ends of the transverse pole pattern (2310) and combined with the transverse pole pattern (2310). Additionally, flange patterns (2331, 2335) may be extended transversely from both ends of the longitudinal pole pattern (2320) and combined with the longitudinal pole pattern (2320).
[0155] As shown in FIG. 11, the edge slit (2340) can be formed to surround the cross pattern and a plurality of flange patterns as a whole.
[0156] Meanwhile, at least some (1300b) of the second unit cells (410) provided in the second insulating metal thin film layer (400) may have a second pattern. As a non-limiting example, the second pattern may be a square pattern as described above with reference to FIG. 11. According to one aspect, as described above with reference to FIG. 11, the second pattern may include square slits (2350, 2360) having a predetermined width and size.
[0157] According to one aspect, an insulating glass for construction (1000) having frequency selectivity can be configured to absorb a signal of a predetermined absorption frequency band. That is, it can absorb a signal of a specific frequency band.
[0158] More specifically, but not limitedly, either of the first insulating metal thin film layer (200) and the second insulating metal thin film layer (400) may be configured to transmit a signal in an absorption frequency band, and the other of the first insulating metal thin film layer (200) and the second insulating metal thin film layer (400) may be configured to absorb the signal transmitted by either of the first insulating metal thin film layer (200) and the second insulating metal thin film layer (400). In other words, if one insulating metal thin film layer transmits a signal first, the other insulating metal thin film layer may be configured to absorb the transmitted signal.
[0159] According to one aspect, an insulating glass for architecture having frequency selectivity according to one embodiment of the present invention may be configured to transmit a signal of a predetermined transmission frequency band different from the aforementioned absorption frequency band. That is, an insulating glass for architecture having frequency selectivity according to one embodiment of the present invention may be configured to absorb a signal of a specific frequency band and transmit a signal of a different frequency band. In other words, it is possible to implement a frequency-selective low-e glass having both a cutoff frequency and an allowable frequency simultaneously.
[0160] According to one aspect, the first insulating metal thin film layer (200) or the second insulating metal thin film layer (400) may be configured such that the absorption rate and the frequency bandwidth of the absorbed signal are changed by changing the width (2340W) of the edge slit (2340). As a non-limiting example, the absorption rate and bandwidth of the absorbed frequency band may be adjusted by adjusting the loop width.
[0161] Additionally, as a non-limiting example, the target frequency band can be adjusted by adjusting the spacing of the flange patterns (2331, 2333, 2335, 2337). More specifically, the first insulating metal thin film layer (200) or the second insulating metal thin film layer (400) may be configured such that the frequency band of the absorbed or transmitted signal is changed by changing the length (2330L) of the flange patterns (2331, 2333, 2335, 2337). For example, the frequency band of the absorbed or transmitted signal may be changed by changing the longitudinal length of the flange patterns (2333, 2337) or the transverse length of the flange patterns (2331, 2335).
[0162] Alternatively, according to one aspect, the first insulating metal thin film layer (200) or the second insulating metal thin film layer (400) may be configured such that the frequency band of the signal absorbed or transmitted is changed by changing the distance (2310L) between the pole pattern parallel to the cross pattern flange pattern and the flange pattern. As a non-limiting example, the frequency band of the signal absorbed or transmitted may be changed by changing the distance between the transverse pole pattern (2310) and the flange pattern (2331) or flange pattern (2335), or the distance between the longitudinal pole pattern (2320) and the flange pattern (2333) or flange pattern (2337).
[0163] As illustrated in FIG. 11, according to one aspect, the square slit may include an outer square slit (2350) and an inner square slit (2360) disposed inside the outer square slit. Here, the outer square slit (2350) may be configured to transmit or absorb a signal of a first absorption frequency band, and the inner square slit (2360) may be configured to transmit or absorb a signal of a second absorption frequency band. However, the technical concept of the present invention is not limited thereto, and a single square slit may be provided to perform absorption for a single frequency band, or three or more square slits may be provided to perform absorption for three or more frequency bands. Furthermore, the shape of the square slit according to the embodiments of the present invention is not necessarily limited to a square shape, and slits of various shapes, such as a rectangle, should also be included in the technical concept of the present invention.
[0164] Here, the second insulating metal thin film layer (400) can be configured so that the frequency bandwidth of the transmitted signal is changed by changing the width (2350W, 2360W) of the square slit (2350, 2360). As a non-limiting example, the bandwidth can be adjusted by adjusting the width of the loop of the Double Square Loop Pattern. That is, the bandwidth of the transmitted signal can be adjusted according to the width of the slit, and for example, as the width of the slit increases, the transmission bandwidth can be widened.
[0165] Meanwhile, the second insulating metal thin film layer (400) can be configured such that the frequency band of the absorbed signal is changed by changing the length (2350L, 2360L) of one side of the square slit (2350, 2360). As a non-limiting example, the absorption frequency band can be adjusted by adjusting the size of the loop of the Double Square Loop Pattern.
[0166] In addition, it is possible to implement an absorber for dual bands by adjusting the size and width of the square slits (2350, 2360) of the second insulating metal thin film layer (400).
[0167] As a non-limiting example, the length of one side (2300L) of the first unit cell may be 10 mm, the length (2330L) of the flange pattern may be 4.5 mm, the distance (2310L) between the cross pattern and the flange pattern parallel to each other may be 3 mm, and the width (2340W) of the edge slit (2340) may be 0.25 mm, but is not limited thereto.
[0168] In addition, as a non-limiting example, the length of one side (2301L) of the second unit cell may be 10 mm, the length of one side (2350L) of the outer square slit may be 7 mm, the length of one side (2360L) of the inner square slit may be 3 mm, the width (2350W) of the outer square slit may be 0.175 mm, and the width (2360W) of the inner square slit may be 0.1 mm, but is not limited thereto.
[0169] In this regard, as previously described with reference to FIG. 12, it was confirmed that frequency selectivity can be imparted to the coating surface of Low-E glass by forming a pattern using laser processing. Furthermore, as shown in FIG. 11, it was confirmed that a higher efficiency of radio wave absorption capability was imparted through narrow area cutting by adopting a Jerusalem Loop structure in the first insulating metal thin film layer (200) and a square loop in the second insulating metal thin film layer (400). It exhibited a radio wave absorption capability of over 90% in a broadband of an exemplary absorption target frequency band (16.5 GHz to 18 GHz).
[0170] By changing the second insulating metal thin film layer (400) into a square loop, the absorption rate is increased and the absorption rate of the low frequency band (6 GHz) is controlled (60% -> 40%). Compared to the conventional Jerusalem pattern implemented with cross slits having longitudinal slits and transverse slits and flange slits coupled to the ends of cross slits, it is possible to achieve a higher absorption rate (85% -> 90%) and realize broadband absorption capability by adopting the Jerusalem loop structure as shown in FIG. 11.
[0171] Meanwhile, FIG. 14 shows the electromagnetic wave absorption rate according to the pattern structure of FIG. 13. In this regard, according to one aspect, the metal mesh structure can be configured to increase the electromagnetic wave absorption rate of an insulating glass for building that has frequency selectivity by employing the metal mesh structure, compared to the case where at least some of the first unit cells (210) or the second unit cells (410) do not include the metal mesh structure. As shown in FIG. 14, it was confirmed that by employing the metal mesh structure, the absorption rate for a signal of, for example, 18 GHz was increased from the conventional absorption rate of 92% to 95.5%.
[0172] Additionally, according to one aspect, the metal mesh structure can be configured to increase the bandwidth of the signal absorbed by the architectural insulating glass having frequency selectivity by employing the metal mesh structure, compared to the case where at least some of the first unit cells (210) or the second unit cells (410) do not include the metal mesh structure. As shown in FIG. 14, it was confirmed that the absorption rate in the 6 GHz band was improved from 43% to 63%, and the frequency band of the absorbed signal was extended to the 6 GHz band.
[0173]
[0174] Reduced scale pattern structure
[0175] According to one aspect of the present invention, an insulating glass for architecture (1000) having frequency selectivity may be configured to absorb signals of a predetermined absorption frequency band. That is, the insulating glass for architecture (1000) according to one aspect of the present invention may be, for example, Low-E glass, and may operate as an absorber for radio waves by using a metal thin film layer provided for insulation on the Low-E glass. For example, it may be configured to absorb signals of a specific frequency band.
[0176] In this regard, as illustrated in FIG. 7 to FIG. 8, an architectural insulating glass (1000) having frequency selectivity according to one embodiment of the present invention may include a first glass layer (100), a first insulating metal thin film layer (200) disposed on top of the first glass layer, a polymer bonding layer (300) disposed on top of the first insulating metal thin film layer, a second insulating metal thin film layer (400) disposed on top of the polymer bonding layer, and a second glass layer (500) disposed on top of the second insulating metal thin film layer.
[0177] Note that the first insulating metal thin film layer (200) may, for example, be coated with silver (Ag) paste on the first glass layer (100), but is not limited thereto, and any metal material may be used to form the first insulating metal thin film layer (200). As a non-limiting example, the thickness of the first insulating metal thin film layer (200) may be 10 to 40 μm, but is not limited thereto.
[0178] Additionally, it should be noted that the second insulating metal thin film layer (400) may, for example, be coated with silver (Ag) paste on the second glass layer (500), but is not limited thereto, and any metal material may be used to form the second insulating metal thin film layer (400). As a non-limiting example, the thickness of the second insulating metal thin film layer (400) may be 10 to 40 μm, but is not limited thereto.
[0179] Additionally, as described above with reference to FIG. 9, the first insulating metal thin film layer (200) may include a plurality of first unit cells (210-1, ..., 210-n) arranged within the plane of the first insulating metal thin film layer (200). Here, the plane of the first insulating metal thin film layer may refer to the surface facing an optical or wireless signal when the first insulating metal thin film layer is positioned, as shown in FIG. 9, rather than the side of the first insulating metal thin film layer as shown in FIG. 7, for example. According to one aspect, each first unit cell may be formed over the entire thickness direction area extending from the front to the back of the first insulating metal thin film layer (200), but is not limited thereto. According to one aspect, a form in which the pattern of the unit cells is formed only partially in the thickness direction of the first insulating metal thin film layer (200) should also be understood to be included within the technical scope of the present invention.
[0180] Meanwhile, as described above with reference to FIG. 10, the second insulating metal thin film layer (400) may include a plurality of second unit cells (410-1, ..., 410-n) arranged within the plane of the second insulating metal thin film layer (400). Here, the plane of the second insulating metal thin film layer may refer to a surface that faces an optical or wireless signal when the second insulating metal thin film layer is positioned, as shown in FIG. 10, rather than a side surface of the second insulating metal thin film layer as shown in FIG. 7, for example. According to one aspect, each second unit cell may be formed over the entire thickness direction area extending from the front to the back of the second insulating metal thin film layer (400), but is not limited thereto. According to one aspect, a form in which the pattern of the unit cell is formed only partially in the thickness direction of the second insulating metal thin film layer (400) should also be understood to be included in the technical scope of the present invention.
[0181]
[0182] In relation to one aspect, according to one aspect of the present invention, in a building insulating glass (1000) according to one aspect of the present invention, at least some of the first unit cells (210) included in the first insulating metal thin film layer (200) and / or at least some of the second unit cells (410) included in the second insulating metal thin film layer (400) may include a hierarchical reduced-scale pattern structure as a means to adjust the bandwidth or induce multiple resonances for miniaturization of a frequency selective surface (FSS) provided in at least one of the first insulating metal thin film layer (200) and / or the second insulating metal thin film layer (400). According to one aspect, the patterns provided in the first metal thin film layer (200) and / or the second insulating metal thin film layer (400) employing the hierarchical reduced-scale pattern structure may be configured to control frequency selective characteristics through self-similarity based on a hierarchical arrangement of patterns of the same shape with different ratios.
[0183]
[0184] FIG. 17 illustrates a pattern structure including a reduced scale pattern according to one embodiment of the present invention.
[0185] In a building insulating glass (1000) according to one aspect of the present invention, as illustrated exemplarily in FIG. 17, at least some of the first unit cells (210) included in the first insulating metal thin film layer (200) may include a first pattern, and at least some of the second unit cells (410) included in the second insulating metal thin film layer (400) may include a second pattern.
[0186] Here, according to one aspect, at least some (1600a) of the first unit cells provided in the first insulating metal thin film layer (200) may include a first pattern of a reference scale and a first pattern of a first reduction scale disposed in at least one blank area provided in the first pattern of the reference scale.
[0187] Additionally, according to one aspect, at least some (1300b) of the second unit cells (410) provided in the second insulating metal thin film layer (400) may have a second pattern. As a non-limiting example, the second pattern may be a square pattern as described above with reference to FIG. 11. According to one aspect, as described above with reference to FIG. 11, the second pattern may include square slits (2350, 2360) having a predetermined width and size.
[0188]
[0189] As a non-limiting but more specific example, at least some (1600a) of the first unit cells provided in the first insulating metal thin film layer (200) may further include a first pattern of a second reduction scale disposed in at least one blank area provided in the first pattern of the first reduction scale.
[0190] In this regard, FIG. 15 shows a stepwise reduced scale pattern structure according to one embodiment of the present invention, and FIG. 16 is a stepwise partial enlarged view of the reduced scale pattern structure in the pattern structure of FIG. 15.
[0191] Referring to FIG. 15, at least some (2300a) of the first unit cells (210) included in the first insulating metal thin film layer (200) may have a first pattern, and the first pattern may be, for example, a Jerusalem loop pattern as described above with reference to FIG. 11, but is not limited thereto.
[0192] Referring again to FIG. 15, the first reduction scale unit (1500a) may have a first pattern and at least one first pattern of a first reduction scale placed in a blank area of the first pattern. Additionally, the second reduction scale unit (1600a) may further include a first pattern of a second reduction scale placed in at least one blank area provided in the first pattern of the first reduction scale, in addition to the first pattern of the first reduction scale unit and the first pattern of the first reduction scale.
[0193] As illustrated in FIG. 16 as a non-limiting example, in the second reduction scale unit (1600a), a first pattern (1610a) of the first reduction scale may be placed in the blank area of the first pattern, and a first pattern (1620a) of the second reduction scale may be placed in the blank area of the first pattern of the first reduction scale.
[0194] According to one aspect, the first pattern (1610a) of the first reduction scale may have a size of 1 / 4 of the first pattern of the reference scale, but is not limited thereto. Also, according to one aspect, the second pattern (1620a) of the second reduction scale may be configured to have a size of 1 / 16 of the first pattern of the reference scale, but is not limited thereto.
[0195]
[0196] As illustrated in FIGS. 15 to 17, at least some (1600a) of the first unit cells (210) included in the first insulating metal thin film layer (200) may include at least one of a first pattern of a reference scale, a first pattern of a first reduced scale (1610a), and a first pattern of a second reduced scale (1620a). Here, the first pattern of the reference scale, the first pattern of the first reduced scale (1610a), and the first pattern of the second reduced scale (1620a) may be patterns having different scales but the same shape.
[0197] As a non-limiting example, the first pattern may be a Jerusalem pattern as described above with reference to FIG. 11. According to one aspect, as described with reference to FIG. 11, the first pattern may include a cross pattern (2310, 2320), a flange pattern (2331, 2333, 2335, 2337), and an edge slit (2340).
[0198] More specifically, but not limitedly, the cross pattern comprises a longitudinal pole pattern (2320) and a transverse pole pattern (2310) that intersects the longitudinal pole pattern. The longitudinal pole pattern (2320) and the transverse pole pattern (2310) may be orthogonal to each other, but are not limited thereto.
[0199] As illustrated in FIG. 11, a plurality of flange patterns (2331, 2333, 2335, 2337) may each be joined to a plurality of ends of a cross pattern. Here, the flange patterns (2331, 2333, 2335, 2337) may be arranged to extend in a direction orthogonal to the cross pattern at the point of joining with the cross pattern, but are not limited thereto. Additionally, the longitudinal midpoint of each flange pattern (2331, 2333, 2335, 2337) may be joined to the cross pattern, but is not limited thereto.
[0200] More specifically, but not limitedly, flange patterns (2333, 2337) may be extended longitudinally from both ends of the transverse pole pattern (2310) and combined with the transverse pole pattern (2310). Additionally, flange patterns (2331, 2335) may be extended transversely from both ends of the longitudinal pole pattern (2320) and combined with the longitudinal pole pattern (2320).
[0201] As shown in FIG. 11, the edge slit (2340) can be formed to surround the cross pattern and a plurality of flange patterns as a whole.
[0202] Meanwhile, at least some (1300b) of the second unit cells (410) provided in the second insulating metal thin film layer (400) may have a second pattern. As a non-limiting example, the second pattern may be a square pattern as described above with reference to FIG. 11. According to one aspect, as described above with reference to FIG. 11, the second pattern may include square slits (2350, 2360) having a predetermined width and size.
[0203] According to one aspect, an insulating glass for construction (1000) having frequency selectivity can be configured to absorb a signal of a predetermined absorption frequency band. That is, it can absorb a signal of a specific frequency band.
[0204] More specifically, but not limitedly, either of the first insulating metal thin film layer (200) and the second insulating metal thin film layer (400) may be configured to transmit a signal in an absorption frequency band, and the other of the first insulating metal thin film layer (200) and the second insulating metal thin film layer (400) may be configured to absorb the signal transmitted by either of the first insulating metal thin film layer (200) and the second insulating metal thin film layer (400). In other words, if one insulating metal thin film layer transmits a signal first, the other insulating metal thin film layer may be configured to absorb the transmitted signal.
[0205] According to one aspect, an insulating glass for architecture having frequency selectivity according to one embodiment of the present invention may be configured to transmit a signal of a predetermined transmission frequency band different from the aforementioned absorption frequency band. That is, an insulating glass for architecture having frequency selectivity according to one embodiment of the present invention may be configured to absorb a signal of a specific frequency band and transmit a signal of a different frequency band. In other words, it is possible to implement a frequency-selective low-e glass having both a cutoff frequency and an allowable frequency simultaneously.
[0206] According to one aspect, the first insulating metal thin film layer (200) or the second insulating metal thin film layer (400) may be configured such that the absorption rate and the frequency bandwidth of the absorbed signal are changed by changing the width (2340W) of the edge slit (2340). As a non-limiting example, the absorption rate and bandwidth of the absorbed frequency band may be adjusted by adjusting the loop width.
[0207] Additionally, as a non-limiting example, the target frequency band can be adjusted by adjusting the spacing of the flange patterns (2331, 2333, 2335, 2337). More specifically, the first insulating metal thin film layer (200) or the second insulating metal thin film layer (400) may be configured such that the frequency band of the absorbed or transmitted signal is changed by changing the length (2330L) of the flange patterns (2331, 2333, 2335, 2337). For example, the frequency band of the absorbed or transmitted signal may be changed by changing the longitudinal length of the flange patterns (2333, 2337) or the transverse length of the flange patterns (2331, 2335).
[0208] Alternatively, according to one aspect, the first insulating metal thin film layer (200) or the second insulating metal thin film layer (400) may be configured such that the frequency band of the signal absorbed or transmitted is changed by changing the distance (2310L) between the pole pattern parallel to the cross pattern flange pattern and the flange pattern. As a non-limiting example, the frequency band of the signal absorbed or transmitted may be changed by changing the distance between the transverse pole pattern (2310) and the flange pattern (2331) or flange pattern (2335), or the distance between the longitudinal pole pattern (2320) and the flange pattern (2333) or flange pattern (2337).
[0209] As illustrated in FIG. 11, according to one aspect, the square slit may include an outer square slit (2350) and an inner square slit (2360) disposed inside the outer square slit. Here, the outer square slit (2350) may be configured to transmit or absorb a signal of a first absorption frequency band, and the inner square slit (2360) may be configured to transmit or absorb a signal of a second absorption frequency band. However, the technical concept of the present invention is not limited thereto, and a single square slit may be provided to perform absorption for a single frequency band, or three or more square slits may be provided to perform absorption for three or more frequency bands. Furthermore, the shape of the square slit according to the embodiments of the present invention is not necessarily limited to a square shape, and slits of various shapes, such as a rectangle, should also be included in the technical concept of the present invention.
[0210] Here, the second insulating metal thin film layer (400) can be configured so that the frequency bandwidth of the transmitted signal is changed by changing the width (2350W, 2360W) of the square slit (2350, 2360). As a non-limiting example, the bandwidth can be adjusted by adjusting the width of the loop of the Double Square Loop Pattern. That is, the bandwidth of the transmitted signal can be adjusted according to the width of the slit, and for example, as the width of the slit increases, the transmission bandwidth can be widened.
[0211] Meanwhile, the second insulating metal thin film layer (400) can be configured such that the frequency band of the absorbed signal is changed by changing the length (2350L, 2360L) of one side of the square slit (2350, 2360). As a non-limiting example, the absorption frequency band can be adjusted by adjusting the size of the loop of the Double Square Loop Pattern.
[0212] In addition, it is possible to implement an absorber for dual bands by adjusting the size and width of the square slits (2350, 2360) of the second insulating metal thin film layer (400).
[0213] As a non-limiting example, the length of one side (2300L) of the first unit cell may be 10 mm, the length (2330L) of the flange pattern may be 4.5 mm, the distance (2310L) between the cross pattern and the flange pattern parallel to each other may be 3 mm, and the width (2340W) of the edge slit (2340) may be 0.25 mm, but is not limited thereto.
[0214] In addition, as a non-limiting example, the length of one side (2301L) of the second unit cell may be 10 mm, the length of one side (2350L) of the outer square slit may be 7 mm, the length of one side (2360L) of the inner square slit may be 3 mm, the width (2350W) of the outer square slit may be 0.175 mm, and the width (2360W) of the inner square slit may be 0.1 mm, but is not limited thereto.
[0215] In this regard, as previously described with reference to FIG. 12, it was confirmed that frequency selectivity can be imparted to the coating surface of Low-E glass by forming a pattern using laser processing. Furthermore, as shown in FIG. 11, it was confirmed that a higher efficiency of radio wave absorption capability was imparted through narrow area cutting by adopting a Jerusalem Loop structure in the first insulating metal thin film layer (200) and a square loop in the second insulating metal thin film layer (400). It exhibited a radio wave absorption capability of over 90% in a broadband of an exemplary absorption target frequency band (16.5 GHz to 18 GHz).
[0216] By changing the second insulating metal thin film layer (400) into a square loop, the absorption rate is increased and the absorption rate of the low frequency band (6 GHz) is controlled (60% -> 40%). Compared to the conventional Jerusalem pattern implemented with cross slits having longitudinal slits and transverse slits and flange slits coupled to the ends of cross slits, it is possible to achieve a higher absorption rate (85% -> 90%) and realize broadband absorption capability by adopting the Jerusalem loop structure as shown in FIG. 11.
[0217] Meanwhile, FIG. 18 shows the electromagnetic wave absorption rate according to the pattern structure of FIG. 17. In this regard, according to one aspect, by providing a first pattern of a first reduction scale, the electromagnetic wave absorption rate of an insulating glass for architecture having frequency selectivity according to one aspect of the present invention can be configured to increase compared to the case where only a first pattern of a reference scale is provided without providing a first pattern of a first reduction scale. As shown in FIG. 18, it was confirmed that in both cases where a first pattern of a first reduction scale is provided, or where a first pattern of a first reduction scale and a second reduction scale are provided, the absorption rate is improved from a conventional 43% to 57% in, for example, the 6 GHz frequency band.
[0218] In addition, according to one aspect, by providing a first pattern of a first reduction scale and a second pattern of a second reduction scale, the radio wave absorption of the architectural insulating glass (1000) having frequency selectivity according to one aspect of the present invention is increased compared to the case where the first pattern of the first reduction scale and the second pattern of the second reduction scale are not provided, and the bandwidth of the signal absorbed by the architectural insulating glass (1000) having frequency selectivity can be increased. As shown in FIG. 18, according to the second reduction scale unit (1600a), an absorption signal bandwidth of 0.3 GHz was confirmed based on an absorption rate of 90%. In addition, it was confirmed that the absorption rate was also improved from the existing 92% to 95%.
[0219]
[0220] Although the invention has been described above with reference to the drawings and embodiments, this does not mean that the scope of protection of the present invention is limited by the drawings or embodiments, and those skilled in the art will understand that various modifications and changes can be made to the present invention without departing from the spirit and scope of the invention as described in the following claims.
[0221] Although the present invention described above is explained based on a series of functional blocks, it is not limited by the aforementioned embodiments and attached drawings, and it will be obvious to those skilled in the art that various substitutions, modifications, and changes are possible within the scope of the technical concept of the present invention.
[0222] The combination of the aforementioned embodiments is not limited to the aforementioned embodiments, and various forms of combinations in addition to the aforementioned embodiments may be provided as needed for implementation and / or implementation.
[0223] In the aforementioned embodiments, methods are described based on flowcharts as a series of steps or blocks; however, the present invention is not limited to the order of the steps, and some steps may occur in a different order or simultaneously with other steps as described above. Furthermore, those skilled in the art will understand that the steps shown in the flowcharts are not exclusive, that other steps may be included, or that one or more steps of the flowcharts may be omitted without affecting the scope of the present invention.
[0224] The foregoing embodiments include examples of various aspects. While it is not possible to describe all possible combinations for representing various aspects, those skilled in the art will recognize that other combinations are possible. Accordingly, the present invention shall be deemed to include all other substitutions, modifications, and changes falling within the scope of the following claims.
[0225] [Explanation of the symbol]
[0226] 100: 1st glass layer
[0227] 200: First insulating metal thin film layer
[0228] 210: 1st Unit Cell
[0229] 300: Polymer bonding layer
[0230] 400: Second insulating metal thin film layer
[0231] 410: 2nd Unit Cell
[0232] 500: Second glass layer
Claims
1. As an insulating glass for architecture having frequency selectivity, First glass layer; A first insulating metal thin film layer disposed on top of the first glass layer; A polymer bonding layer disposed on top of the first insulating metal thin film layer; A second insulating metal thin film layer disposed on top of the polymer bonding layer; and A second glass layer disposed on top of the second insulating metal thin film layer; comprising The first insulating metal thin film layer comprises a plurality of first unit cells arranged within the plane of the first insulating metal thin film layer, and The second insulating metal thin film layer comprises a plurality of second unit cells arranged within the plane of the second insulating metal thin film layer, and At least some of the first unit cells mentioned above are, The first pattern of the reference scale; and A first pattern of a first reduction scale disposed in at least one blank area provided in the first pattern of the reference scale above; comprising Architectural insulating glass with frequency selectivity.
2. In Paragraph 1, The architectural insulating glass having the above frequency selectivity is, Configured to absorb signals within a predetermined absorption frequency band, Architectural insulating glass with frequency selectivity.
3. In Paragraph 1, At least some of the first unit cells mentioned above are, A first pattern of a second reduction scale disposed in at least one blank area provided in the first pattern of the first reduction scale; further comprising Architectural insulating glass with frequency selectivity.
4. In Paragraph 1, The first pattern of the first reduction scale above is, Increasing the electromagnetic wave absorption of architectural insulating glass having the frequency selectivity compared to the case where the first pattern of the first reduction scale is not provided, Architectural insulating glass with frequency selectivity.
5. In Paragraph 3, The first pattern of the first reduction scale and the second pattern of the second reduction scale are, Compared to the case where the first pattern of the first reduction scale and the second pattern of the second reduction scale are not provided, the radio wave absorption of the architectural insulating glass having the frequency selectivity is increased, and the bandwidth of the signal absorbed by the architectural insulating glass having the frequency selectivity is increased. Architectural insulating glass with frequency selectivity.
6. In Paragraph 1, The above first pattern is, A cross pattern having a longitudinal pole pattern and a transverse pole pattern intersecting the longitudinal pole pattern; A plurality of flange patterns each coupled to a plurality of end portions of the cross pattern and extending in a direction orthogonal to the cross pattern at the point of coupling with the cross pattern; and An edge slit formed to surround the above cross pattern and a plurality of flange patterns; comprising Architectural insulating glass with frequency selectivity.
7. In Paragraph 6, At least some of the above-mentioned second unit cells include a second pattern, and The above second pattern is, A square slit having a predetermined width and size; comprising, Architectural insulating glass with frequency selectivity.
8. In Paragraph 7, The above square slit is, outer square slit; and Including an inner square slit disposed inside the outer square slit; The above outer square slit transmits or absorbs a signal of the first absorption frequency band, and The inner square slit above is configured to transmit or absorb a signal of the second absorption frequency band, Architectural insulating glass with frequency selectivity.
9. In Paragraph 6, The first pattern of the first reduction scale above is, Having a size of 1 / 4 of the first pattern of the above reference scale, The second pattern of the second reduction scale above is, Having a size of 1 / 16 of the first pattern of the above reference scale, Architectural insulating glass with frequency selectivity.