Organic film composition for adhesion, display device comprising same, and electronic device comprising same

Abstract

A display device according to an embodiment comprises: a substrate; an organic film on the substrate; and a light-emitting element disposed on the organic film, wherein the organic film comprises a monomer represented by chemical formula 1, a reactive unsaturated compound, a photoinitiator, and a solvent and comprises, relative to 100 parts by weight thereof, 25 to 50 parts by weight of the monomer represented by chemical formula 1, 5 to 10 parts by weight of the reactive unsaturated compound, 0.25 to 5 parts by weight of the photoinitiator, and 40 to 70 parts by weight of the solvent.

Description

An organic film composition for adhesion, a display device including the same, and an electronic device including the same

[0001] The present invention relates to an adhesive organic film composition and a display device including the same.

[0002] As the information society develops, the demand for display devices to display images is increasing in various forms. Display devices may be flat panel displays such as Liquid Crystal Displays, Field Emission Displays, and Light Emitting Displays.

[0003] The light-emitting display device may include an organic light-emitting display device comprising an organic light-emitting diode element as a light-emitting element, and a micro light-emitting display device comprising a micro light-emitting diode element (hereinafter referred to as a micro light-emitting element) as a light-emitting element. Since the micro light-emitting diode element is made of inorganic material, it has the advantage of having a long lifespan with fewer degradation issues compared to organic light-emitting diode elements.

[0004] Since multiple light-emitting elements are formed on separate substrates, a process of transferring them to a display panel is required. However, when transferring multiple light-emitting elements to a display panel, the multiple light-emitting elements may not be fixed and may tilt or fall over.

[0005] The problem that the present invention aims to solve is to provide an organic film (adhesive organic film composition) with improved fluidity and adhesion to prevent multiple light-emitting elements from tilting and falling over or collapsing during the process of transferring multiple light-emitting elements to a display panel (or to reduce the degree or frequency of tilting or falling of multiple light-emitting elements).

[0006] The problems of the present invention are not limited to the technical problems mentioned above, and other unmentioned technical problems will be clearly understood by those skilled in the art from the description below.

[0007] An adhesive organic film composition according to one embodiment for solving the above problem comprises a monomer represented by the following chemical formula 1; a reactive unsaturated compound represented by the following chemical formula 2; a photoinitiator; and a solvent.

[0008] [Chemical Formula 1]

[0009]

[0010] [Chemical Formula 2]

[0011]

[0012] In the above chemical formula 1, n and m are integers.

[0013] For every 100 parts by weight of the adhesive organic film composition, it may comprise 25 to 50 parts by weight of a monomer represented by Formula 1; 5 to 10 parts by weight of the reactive unsaturated compound; 0.25 to 5 parts by weight of the photoinitiator; and 40 to 70 parts by weight of the solvent.

[0014] R in the following mathematical formula 1 C=C / C=O It can be 0.28 or higher.

[0015] [Mathematical Formula 1]

[0016]

[0017] In the above mathematical formula 1, the above I C=C is the C=C coupling peak intensity in the infrared spectroscopic spectrum, and the above I C=O is the C=O bond peak intensity in the infrared spectroscopic spectrum.

[0018] The adhesive strength of the above adhesive organic film composition may be 2.2 mN or more.

[0019] The modulus of the above adhesive organic film composition may be 1.5 GPa or less.

[0020] At a temperature of 40℃ or higher, the bonding rate of the above adhesive organic film composition may be 99.99% or higher.

[0021] A display device according to one embodiment of the present invention comprises a substrate; an organic film disposed on the substrate; and a light-emitting element disposed on the organic film, wherein the organic film comprises a monomer represented by Formula 1; a reactive unsaturated compound; a photoinitiator; and a solvent, and may comprise, with respect to 100 parts by weight of the organic film, 25 to 50 parts by weight of the monomer represented by Formula 1; 5 to 10 parts by weight of the reactive unsaturated compound; 0.25 to 5 parts by weight of the photoinitiator; and 40 to 70 parts by weight of the solvent.

[0022] The above reactive unsaturated compound may include a compound represented by the above chemical formula 2.

[0023] The above organic film is R of the above mathematical formula 1. C=C / C=O It can be 0.28 or higher.

[0024] The adhesive strength of the above organic film may be 2.22 mN or more.

[0025] The modulus of the above organic film may be 1.5 GPa or less.

[0026] The bonding rate of the above organic film can be 99.99% or higher at a temperature of 40℃ or higher.

[0027] The above photoinitiator may include an oxime-based photoinitiator.

[0028] The above organic film may further include an ionic initiator.

[0029] The light-emitting element comprises a semiconductor stack; a protective film disposed on a side of the semiconductor stack; and a contact electrode disposed on the protective film, wherein a portion of the side of the semiconductor stack is exposed and not covered by the contact electrode, and the contact electrode may be disposed apart from the upper surface of the semiconductor stack.

[0030] The light-emitting element comprises: a semiconductor stack; a conductive layer disposed between the organic film and the semiconductor stack; a protective film disposed on the sides of the conductive layer and the sides of the semiconductor stack; a first contact electrode disposed on the protective film and connected to the conductive layer exposed and not covered by the protective film; and a second contact electrode disposed on the protective film and disposed in a hole penetrating a portion of the conductive layer and the semiconductor stack, wherein each of the first contact electrode and the second contact electrode may be disposed apart from the upper surface of the semiconductor stack.

[0031] An electronic device according to one embodiment of the present invention comprises a display module that provides an image; and a processor that transmits an image data signal to the display module, wherein the display module comprises a substrate; an organic film disposed on the substrate; and a light-emitting element disposed on the organic film, wherein the organic film comprises a monomer represented by Formula 1; a reactive unsaturated compound; a photoinitiator; and a solvent, and may comprise, for every 100 parts by weight of the organic film, 25 to 50 parts by weight of the monomer represented by Formula 1; 5 to 10 parts by weight of the reactive unsaturated compound; 0.25 to 5 parts by weight of the photoinitiator; and 40 to 70 parts by weight of the solvent.

[0032] The above reactive unsaturated compound may include a compound represented by the above chemical formula 2.

[0033] The above organic film is R of the following mathematical formula 1. C=C / C=O It can be 0.28 or higher.

[0034] The adhesive strength of the above organic film may be 2.22 mN or more.

[0035] The modulus of the above organic film may be 1.5 GPa or less.

[0036] Specific details of other embodiments are included in the detailed description and drawings.

[0037] According to the adhesive organic film composition and the display device including the same according to the embodiments, the monomer content is increased and the photoinitiator content is decreased, so the fluidity and adhesiveness of the adhesive organic film composition can be improved.

[0038] According to the adhesive organic film composition and the display device including the same according to the embodiments, by applying the adhesive organic film composition with improved fluidity and adhesiveness to an organic film for fixing a plurality of light-emitting elements, the curing rate of the organic film can be prevented or reduced until the plurality of light-emitting elements are fixed to a display panel. Therefore, the fixation of the light-emitting elements transferred to the display panel can be improved.

[0039] The effects according to the embodiments are not limited to those exemplified above, and a wider variety of effects are included in this specification.

[0040] FIG. 1 is a perspective view showing a display device according to one embodiment.

[0041] FIG. 2 is a layout diagram showing a display device according to one embodiment.

[0042] FIG. 3 is a block diagram showing a display device according to one embodiment.

[0043] FIG. 4 is an equivalent circuit diagram showing a subpixel according to one embodiment.

[0044] FIG. 5 is a layout diagram showing pixels of a display area according to one embodiment.

[0045] FIG. 6 is a cross-sectional view showing an example of a cross-section of a display panel corresponding to the line I1-I1' of FIG. 5.

[0046] Figure 7 is a cross-sectional view showing in detail an example of area A of Figure 6.

[0047] FIG. 8 is a layout diagram showing pixels of a display area according to one embodiment.

[0048] FIG. 9 is a cross-sectional view showing an example of a cross-section of a display panel corresponding to the line I2-I2' of FIG. 8.

[0049] Figure 10 is a cross-sectional view showing in detail an example of area B of Figure 9.

[0050] FIG. 11 is a layout diagram showing pixels of a display area according to one embodiment.

[0051] FIG. 12 is a cross-sectional view showing an example of a cross-section of a display panel corresponding to the line I3-I3' of FIG. 11.

[0052] FIG. 13 is a cross-sectional view showing in detail an example of region C of FIG. 12.

[0053] FIG. 14 is a graph showing the curing rate of an adhesive organic film composition according to one embodiment of the present invention.

[0054] FIG. 15 is a graph measuring the adhesive strength of an adhesive organic film composition according to one embodiment of the present invention.

[0055] FIG. 16 is a graph showing the modulus of an adhesive organic film composition according to one embodiment of the present invention.

[0056] FIG. 17 is a graph showing the bonding rate according to temperature of an adhesive organic film composition according to one embodiment of the present invention.

[0057] FIG. 18 is an example drawing showing a smart watch including a display device according to one embodiment.

[0058] FIG. 19 is an exemplary drawing showing a virtual reality device including a display device according to one embodiment.

[0059] FIGS. 20 and FIGS. 21 are exemplary drawings showing a virtual reality device including a display device according to one embodiment.

[0060] FIG. 22 is an exemplary drawing showing an automobile instrument panel and center fascia including display devices according to one embodiment.

[0061] FIG. 23 is an example drawing showing a transparent display device including a display device according to one embodiment.

[0062] The advantages and features of the present invention and the methods for achieving them will become clear by referring to the embodiments described below in detail together with the accompanying drawings. However, the present invention is not limited to the embodiments disclosed below but may be implemented in various different forms. These embodiments are provided merely to ensure that the disclosure of the present invention is complete and to fully inform those skilled in the art of the scope of the invention, and the present invention is defined only by the scope of the claims.

[0063] When elements or layers are referred to as being "on" another element or layer, this includes cases where another layer or element is interposed directly on or in the middle of another element. Throughout the specification, the same reference numerals refer to the same components. Shapes, sizes, ratios, angles, numbers, etc., disclosed in the drawings for describing embodiments are exemplary and therefore the invention is not limited to the depicted details.

[0064] The features of each of the various embodiments of the present invention may be combined or combined with one another, either partially or wholly, and may technically enable various interlocking and operation. Each embodiment may be implemented independently of one another or may be implemented together in an associated relationship.

[0065] Specific embodiments will be described below with reference to the attached drawings.

[0066] FIG. 1 is a perspective view showing a display device according to one embodiment.

[0067] Referring to FIG. 1, the display device (10) is a device for displaying video or still images and can be used as a display screen for various products such as televisions, laptops, monitors, billboards, and the Internet of Things (IOT), as well as portable electronic devices such as mobile phones, smartphones, tablet PCs, smart watches, watch phones, mobile communication terminals, electronic notebooks, electronic books, PMPs (portable multimedia players), navigation systems, and UMPCs (Ultra Mobile PCs).

[0068] The display device (10) may be a light-emitting display device such as an organic light-emitting display device using an organic light-emitting diode, a quantum dot light-emitting display device including a quantum dot light-emitting layer, an inorganic light-emitting display device including an inorganic semiconductor, and a micro light-emitting display device using a micro or nano light-emitting diode (micro LED or nano LED). Hereinafter, the display device (10) has been described with a focus on being a micro light-emitting display device, but the present invention is not limited thereto. Meanwhile, for convenience of explanation, a micro light-emitting diode has been described as a light-emitting element below.

[0069] The display device (10) includes a display panel (100), a display driving circuit (250), a circuit board (300), and a power supply circuit (500).

[0070] The display panel (100) may be formed as a rectangular plane having a short side in a first direction (DR1) and a long side in a second direction (DR2) that intersects the first direction (DR1). The corner where the short side in the first direction (DR1) and the long side in the second direction (DR2) meet may be formed rounded to have a predetermined curvature or formed at a right angle. The plane shape of the display panel (100) is not limited to a rectangle and may be formed as other polygons, circles, or ellipses. The display panel (100) may be formed flat, but is not limited thereto. For example, the display panel (100) may include curved surfaces formed at the left and right ends that have a constant curvature or a changing curvature. In addition, the display panel (100) may be formed flexibly so that it can be bent, curved, folded, or rolled.

[0071] The display panel (100) may include a main area (MA) and a sub-area (SBA).

[0072] The main area (MA) may include a display area (DA) that displays an image and a non-display area (NDA) which is a surrounding area of ​​the display area (DA). The display area (DA) may include a plurality of pixels that display an image. Each of the pixels may include a plurality of subpixels. For example, each of the pixels may include a first subpixel that emits a first light, a second subpixel that emits a second light, and a third subpixel that emits a third light, but the embodiments of the present specification are not limited thereto.

[0073] A sub-region (SBA) may protrude in a second direction (DR2) from one side of a main region (MA). Although FIG. 1 illustrates a sub-region (SBA) unfolded, the sub-region (SBA) may be bent, in which case it may be placed on the lower surface of the display panel (100). When the sub-region (SBA) is bent, it may overlap with the main region (MA) in a third direction (DR3), which is the thickness direction of the display panel (100). A display driving circuit (250) may be placed in the sub-region (SBA).

[0074] The display driving circuit (250) can generate signals and voltages to drive the display panel (100). The display driving circuit (250) may be formed as an integrated circuit (IC) and attached to the display panel (100) using a COG (chip on glass) method, a COP (chip on plastic) method, or an ultrasonic bonding method, but is not limited thereto. For example, the display driving circuit (250) may be attached to the circuit board (300) using a COF (chip on film) method.

[0075] A circuit board (300) can be attached to one end of a sub-region (SBA) of a display panel (100). As a result, the circuit board (300) can be electrically connected to the display panel (100) and the display driving circuit (250). The display panel (100) and the display driving circuit (250) can receive digital video data, timing signals, and driving voltages through the circuit board (300). The circuit board (300) may be a flexible printed circuit board, a printed circuit board, or a flexible film such as a chip-on-film.

[0076] The power supply circuit (500) can generate multiple panel driving voltages according to the power supply voltage from an external source. The power supply circuit (500) can be formed as an integrated circuit (IC) and attached to the circuit board (300) in a COF manner.

[0077] FIG. 2 is a layout diagram showing a display device according to one embodiment. FIG. 2 illustrates a sub-region (SBA) that is unfolded without being bent.

[0078] Referring to FIG. 2, the display panel (100) may include a main area (MA) and a sub area (SBA).

[0079] The main area (MA) may include a display area (DA) for displaying an image and a non-display area (NDA) which is the surrounding area of ​​the display area (DA). The display area (DA) may occupy most of the main area (MA). The display area (DA) may be positioned in the center of the main area (MA).

[0080] A display area (DA) includes a plurality of pixels (PX) for displaying an image, and each of the plurality of pixels (PX) may include a plurality of subpixels (SPX). A pixel (PX) may be defined as a minimum unit of subpixel group capable of expressing a white gradation.

[0081] The non-display area (NDA) may be positioned adjacent to the display area (DA). The non-display area (NDA) may be an outer area of ​​the display area (DA). The non-display area (NDA) may be positioned to surround the display area (DA). The non-display area (NDA) may be an edge area of ​​the display panel (100).

[0082] The first scan driver (SDC1) and the second scan driver (SDC2) may be placed in a non-display area (NDA). The first scan driver (SDC1) may be placed on one side (e.g., the left side) of the display panel (100), and the second scan driver (SDC2) may be placed on the other side (e.g., the right side) of the display panel, but is not limited thereto. Each of the first scan driver (SDC1) and the second scan driver (SDC2) may be electrically connected to the display driving circuit (250) through scan fan-out lines. Each of the first scan driver (SDC1) and the second scan driver (SDC2) may receive a scan control signal from the display driving circuit (250), generate scan signals according to the scan control signal, and output them to the scan lines.

[0083] A sub-region (SBA) may protrude in a second direction (DR2) from one side of a main region (MA). The length of the second direction (DR2) of the sub-region (SBA) may be shorter than the length of the second direction (DR2) of the main region (MA). The length of the first direction (DR1) of the sub-region (SBA) may be shorter than the length of the first direction (DR1) of the main region (MA) or substantially equal to the length of the first direction (DR1) of the main region (MA). The sub-region (SBA) may be bent and may be positioned at the bottom of the display panel (100). In this case, the sub-region (SBA) may overlap with the main region (MA) in a third direction (DR3).

[0084] The sub-region (SBA) may include a connection region (CA), a pad region (PA), and a bending region (BA).

[0085] The connection area (CA) is an area protruding in a second direction (DR2) from one side of the main area (MA). One side of the connection area (CA) is in contact with the non-display area (NDA) of the main area (MA), and the other side of the connection area (CA) may be in contact with the bending area (BA).

[0086] The pad area (PA) is an area where pads (PDs) and a display driving circuit (250) are placed. The display driving circuit (250) can be attached to the driving pads of the pad area (PA) using a conductive adhesive material such as an anisotropic conductive film. The circuit board (300) can be attached to the pads (PDs) of the pad area (PA) using a conductive adhesive material such as an anisotropic conductive film. One side of the pad area (PA) may be in contact with the bending area (BA).

[0087] The bending area (BA) is a bending area. When the bending area (BA) is bent, the pad area (PA) may be positioned below the connecting area (CA) and below the main area (MA). The bending area (BA) may be positioned between the connecting area (CA) and the pad area (PA). One side of the bending area (BA) is in contact with the connecting area (CA), and the other side of the bending area (BA) may be in contact with the pad area (PA).

[0088] FIG. 3 is a block diagram showing a display device according to one embodiment.

[0089] Referring to FIG. 3, the display area (DA) includes a plurality of pixels (PX), a plurality of scan lines (SL), a plurality of light emission control lines (EL), and a plurality of data lines (DL).

[0090] Multiple pixels (PX) may be arranged in a matrix form in a first direction (DR1) and a second direction (DR2). Multiple scan lines (SL) and multiple light emission control lines (EL) may extend in the first direction (DR1) and be arranged in the second direction (DR2). Multiple data lines (DL) may extend in the second direction (DR2) and be arranged in the first direction (DR1). Multiple scan lines (SL) include multiple write scan lines (GWL), multiple control scan lines (GCL), multiple initialization scan lines (GIL), and multiple bias scan lines (GBL).

[0091] Each of the plurality of subpixels (SPX) can be connected to one of the plurality of write scan lines (GWL), one of the plurality of control scan lines (GCL), one of the plurality of initialization scan lines (GIL), one of the plurality of bias scan lines (GBL), one of the plurality of light emission control lines (EL), and one of the plurality of data lines (DL). Each of the plurality of subpixels (SPX) receives a data voltage of the data line (DL) according to the write scan signal of the write scan line (GWL), and can emit light from the light-emitting element according to the data voltage.

[0092] The non-display area (NDA) includes a first scan drive unit (SDC1), a second scan drive unit (SDC2), and a display drive circuit (250).

[0093] Each of the first scan drive unit (SDC1) and the second scan drive unit (SDC2) may include a write scan signal output unit (611), an initial scan signal output unit (612), a bias scan signal output unit (613), and a light emission control signal output unit (614). Each of the write scan signal output unit (611), the initial scan signal output unit (612), the bias scan signal output unit (613), and the light emission control signal output unit (614) may receive a scan timing control signal (SCS) from the timing control circuit (251).

[0094] The write scan signal output unit (611) can generate write scan signals according to the scan timing control signal (SCS) of the timing control circuit (251) and output them sequentially to the write scan lines (GWL).

[0095] The initialization scan signal output unit (612) can generate initialization scan signals according to the scan timing control signal (SCS) and output them sequentially to the initialization scan lines (GIL).

[0096] The bias scan signal output unit (613) can generate bias scan signals according to the scan timing control signal (SCS) and output them sequentially to the bias scan lines (GBL). The light emission control signal output unit (614) can generate light emission control signals according to the scan timing control signal (SCS) and output them sequentially to the light emission control lines (EL).

[0097] The display driving circuit (250) includes a timing control circuit (251) and a data driving circuit (252).

[0098] The data driving circuit (252) can receive digital video data (DATA) and a data timing control signal (DCS) from the timing control circuit (251). The data driving circuit (252) converts the digital video data (DATA) into analog data voltages according to the data timing control signal (DCS) and outputs them to the data lines (DL). In this case, subpixels (SPX) are selected by the write scan signals of the first scan driving unit (SDC1) and the second scan driving unit (SDC2), and data voltages can be supplied to the selected subpixels (SPX).

[0099] The timing control circuit (251) can receive digital video data (DATA) and timing signals from an external source. The timing control circuit (251) can generate a scan timing control signal (SCS) and a data timing control signal (DCS) to control the display panel (100) according to the timing signals. The timing control circuit (400) can output the scan timing control signal (SCS) to the first scan driving unit (SDC1) and the second scan driving unit (SDC2). The timing control circuit (251) can output the digital video data (DATA) and the data timing control signal (DCS) to the data driving circuit (252).

[0100] The power supply circuit (500) can generate a plurality of panel driving voltages according to the power voltage supplied from the outside. For example, the power supply circuit (500) can generate a first power voltage (VDD), a second power voltage (VSS), a third power voltage (VINT), and a fourth power voltage (VAINT) and supply them to the display panel (100).

[0101] FIG. 4 is an equivalent circuit diagram showing a subpixel according to one embodiment.

[0102] Referring to FIG. 4, a subpixel (SPX) according to one embodiment may be connected to scan lines (GWL, GIL, GBL), a light emission control line (EL), and a data line (DL). For example, the subpixel (SPX) may be connected to a write scan line (GWL), an initialization scan line (GIL), a bias scan line (GBL), a light emission control line (EL), and a data line (DL).

[0103] A subpixel (SPX) according to one embodiment includes a driving transistor (DT), switching elements, a capacitor (C1), and a light-emitting element (LE). The switching elements include first to sixth transistors (ST1, ST2, ST3, ST4, ST5, ST6).

[0104] The driving transistor (DT) includes a gate electrode, a first electrode, and a second electrode. The driving transistor (DT) controls the drain-source current (Ids, hereinafter referred to as "driving current") flowing between the first electrode and the second electrode according to the data voltage applied to the gate electrode.

[0105] The light-emitting element (LE) can be a micro light-emitting diode.

[0106] The light-emitting element (LE) emits light according to the driving current (Ids). The amount of light emitted by the light-emitting element (LE) may be proportional to the driving current (Ids). The anode electrode of the light-emitting element (LE) is connected to the first electrode of the fourth transistor (ST4) and the second electrode of the sixth transistor (ST6), and the cathode electrode may be connected to the second power line (VSL) to which the second power supply voltage is applied.

[0107] A capacitor (C1) is formed between the gate electrode of a driving transistor (DT) and a first power line (VDL) to which a first power supply voltage is applied. The first power supply voltage may be a voltage level higher than the second power supply voltage. One electrode of the capacitor (C1) may be connected to the gate electrode of the driving transistor (DT), and the other electrode may be connected to the first power line (VDL).

[0108] As shown in FIG. 4, the first to sixth transistors (ST1, ST2, ST3, ST4, ST5, ST6) and the driving transistor (DT) can all be formed as p-type MOSFETs. In this case, the active layer of each of the first to sixth transistors (ST1, ST2, ST3, ST4, ST5, ST6) and the driving transistor (DT) can be formed of polysilicon.

[0109] The gate electrode of the first transistor (ST1) and the gate electrode of the second transistor (ST2) may be connected to the write scan line (GWL), the gate electrode of the third transistor (ST3) may be connected to the initialization scan line (GIL), and the gate electrode of the fourth transistor (ST4) may be connected to the bias scan line (GBL). Since the first to sixth transistors (ST1, ST2, ST3, ST4, ST5, ST6) are formed as p-type MOSFETs, they may be turned on when a scan signal of gate low voltage and a light emission control signal are applied to the initialization scan line (GIL), the write scan line (GWL), the bias scan line (GBL), and the light emission line (EL), respectively. One electrode of the third transistor (ST3) may be connected to a first initialization voltage line (VIL) to which a third power supply voltage (VINT in FIG. 3) is applied, and one electrode of the fourth transistor (ST4) may be connected to a second initialization voltage line (VAIL) to which a fourth power supply voltage (VAINT in FIG. 3) is applied. The third power supply voltage (VINT in FIG. 3) and the fourth power supply voltage (VAINT in FIG. 3) may be different voltages. Additionally, the third power supply voltage (VINT in FIG. 3) and the fourth power supply voltage (VAINT in FIG. 3) may be voltages at a lower level than the first power supply voltage (VDD) and voltages at a higher level than the second power supply voltage (VSS).

[0110] Alternatively, the driving transistor (DT), the second transistor (ST2), the fourth transistor (ST4), the fifth transistor (ST5), and the sixth transistor (ST6) may be formed as p-type MOSFETs, and the first transistor (ST1) and the third transistor (ST3) may be formed as n-type MOSFETs. In this case, the active layer of each of the driving transistor (DT), the second transistor (ST2), the fourth transistor (ST4), the fifth transistor (ST5), and the sixth transistor (ST6) formed as p-type MOSFETs may be formed of polysilicon, and the active layer of each of the first transistor (ST1) and the third transistor (ST3) formed as n-type MOSFETs may be formed of oxide semiconductor. Additionally, since the first transistor (ST1) and the third transistor (ST3) are formed as n-type MOSFETs, the first transistor (ST1) may be turned on when a gate high voltage scan signal is applied, and the third transistor (ST3) may be turned on when an initialization scan signal of a gate high voltage is applied. In contrast, the second transistor (ST2), the fourth transistor (ST4), the fifth transistor (ST5), and the sixth transistor (ST6) are formed as p-type MOSFETs, so they can be turned on when a scan signal of the gate low voltage and a light emission control signal are applied.

[0111] Alternatively, if the fourth transistor (ST4) is formed as an n-type MOSFET and the remaining transistors (DT, ST1, ST2, ST3, ST5, ST6) are formed as p-type MOSFETs, the active layer of the fourth transistor (ST4) may be formed as an oxide semiconductor, and the active layer of each of the remaining transistors (DT, ST1, ST2, ST3, ST5, ST6) may be formed as polysilicon. In addition, the fourth transistor (ST4) may be turned on when a scan signal of gate high voltage is applied, whereas the remaining transistors (DT, ST1, ST2, ST3, ST5, ST6) may be turned on when a scan signal of gate low voltage and a light emission control signal are applied.

[0112] Alternatively, the first to sixth transistors (ST1, ST2, ST3, ST4, ST5, ST6) and the driving transistor (DT) may all be formed as n-type MOSFETs. In this case, the active layer of each of the first to sixth transistors (ST1, ST2, ST3, ST4, ST5, ST6) and the driving transistor (DT) is formed of an oxide semiconductor and can be turned on when a scan signal of gate high voltage and a light emission control signal are applied.

[0113] FIG. 5 is a layout diagram showing pixels of a display area according to one embodiment.

[0114] Referring to FIG. 5, each of the plurality of pixels (PX) of the display area (DA) may include three subpixels (SPX1, SPX2, SPX3), but the embodiments of the present specification are not limited thereto and may include four subpixels. When each of the plurality of pixels (PX) includes three subpixels (SPX1, SPX2, SPX3), it may include a first subpixel (SPX1), a second subpixel (SPX2), and a third subpixel (SPX3).

[0115] Multiple pixels (PX) can be arranged in a matrix form. In each of the multiple pixels (PX), the first sub-pixel (SPX1), the second sub-pixel (SPX2), and the third sub-pixel (SPX3) can be arranged in a first direction (DR1).

[0116] In the case where each of the plurality of pixels (PX) includes three subpixels (SPX1, SPX2, SPX3), the first subpixel (SPX1) may emit a first light, the second subpixel (SPX2) may emit a second light, and the third subpixel (SPX3) may emit a third light. Here, the first light may be light in the blue wavelength band, the second light may be light in the green wavelength band, and the third light may be light in the red wavelength band. For example, the blue wavelength band may refer to a wavelength band in which the main peak wavelength of the light is included in the wavelength band of approximately 370 nm to 460 nm, the green wavelength band may refer to a wavelength band in which the main peak wavelength of the light is included in the wavelength band of approximately 480 nm to 560 nm, and the red wavelength band may refer to a wavelength band in which the main peak wavelength of the light is included in the wavelength band of approximately 600 nm to 750 nm.

[0117] Alternatively, if each of the plurality of pixels (PX) includes four subpixels, the first subpixel may emit a first light, the second subpixel and the fourth subpixel may emit a second light, and the third subpixel may emit a third light. Alternatively, the first subpixel may emit a first light, the second subpixel may emit a second light, the third subpixel may emit a third light, and the fourth subpixel may emit a fourth light. In this case, the fourth light may be white light.

[0118] A first subpixel (SPX1) includes a first pixel electrode (PXE1), a plurality of light-emitting elements (LE), and a first light conversion layer (QDL1). A second subpixel (SPX2) includes a second pixel electrode (PXE2), a plurality of light-emitting elements (LE), and a second light conversion layer (QDL2). A third subpixel (SPX3) includes a third pixel electrode (PXE3), a plurality of light-emitting elements (LE), and a light-transmitting layer (or third light conversion layer) (TPL).

[0119] Each of the first pixel electrode (PXE1), the second pixel electrode (PXE2), and the third pixel electrode (PXE3) may have a rectangular planar shape having a short side in the first direction (DR1) and a long side in the second direction (DR2). The area of ​​the first subpixel (SPX1), the area of ​​the second subpixel (SPX2), and the area of ​​the third subpixel (SPX3) may be set according to the light conversion efficiency of the first light conversion layer (QDL1) and the light conversion efficiency of the second light conversion layer (QDL2). For example, the area of ​​the subpixel may be larger as the light conversion efficiency decreases.

[0120] For example, as shown in FIG. 5, if the light conversion efficiency of the second light conversion layer (QDL2) is lower than the light conversion efficiency of the first light conversion layer (QDL1), the area of ​​the second pixel electrode (PXE2) may be larger than the area of ​​the first pixel electrode (PXE1). Additionally, while the light transmission layer (TPL) transmits the light of the light-emitting element (LE) as is, the first light conversion layer (QDL1) must convert the light, so the area of ​​the first pixel electrode (PXE1) may be larger than the area of ​​the third pixel electrode (PXE3).

[0121] Each of the pixel electrodes (PXE1, PXE2, PXE3) can be electrically connected to at least one transistor through a pixel connection hole (CT1 / CT2 / CT3). For example, each of the pixel electrodes (PXE1, PXE2, PXE3) can be electrically connected to the second electrode of the fourth transistor (ST4 in FIG. 4) and the second electrode of the sixth transistor (ST6 in FIG. 4) of the corresponding subpixel.

[0122] A plurality of light-emitting elements (LEs) may be disposed on each of the pixel electrodes (PXE1, PXE2, PXE3). An equal number of light-emitting elements (LEs) may be disposed on each of the pixel electrodes (PXE1, PXE2, PXE3). For example, two light-emitting elements (LEs) may be disposed on each of the pixel electrodes (PXE1, PXE2, PXE3). The plurality of light-emitting elements (LEs) may emit a third light, for example, light in the blue wavelength band, but the embodiments of the present specification are not limited thereto. When the light-emitting element (LE) of the first sub-pixel (SPX1) emits a first light, the light-emitting element (LE) of the second sub-pixel (SPX2) emits a second light, and the light-emitting element (LE) of the third sub-pixel (SPX3) emits a third light, the light conversion layers (QDL1, QDL2) and the light transmission layer (TPL) may be omitted.

[0123] The first light conversion layer (QDL1) can completely overlap with the plurality of light-emitting elements (LE) of the first pixel electrode (PXE1) and the first subpixel (SPX1). The area of ​​the first light conversion layer (QDL1) may be larger than the area of ​​the first pixel electrode (PXE1). The first light conversion layer (QDL1) can convert or shift the peak wavelength of incident light to light of another specific peak wavelength and emit it. For example, the first light conversion layer (QDL1) can convert or shift third light emitted from the plurality of light-emitting elements (LE) of the first subpixel (SPX1) into first light.

[0124] The second light conversion layer (QDL2) can completely overlap with the plurality of light-emitting elements (LE) of the second pixel electrode (PXE2) and the second subpixel (SPX2). The area of ​​the second light conversion layer (QDL2) may be larger than the area of ​​the second pixel electrode (PXE2). The second light conversion layer (QDL2) can convert or shift the peak wavelength of the incident light to light of another specific peak wavelength and emit it. For example, the second light conversion layer (QDL2) can convert or shift the third light emitted from the plurality of light-emitting elements (LE) of the second subpixel (SPX2) into the second light.

[0125] The light-transmitting layer (TPL) can completely overlap with the plurality of light-emitting elements (LE) of the third pixel electrode (PXE3) and the third subpixel (SPX3). The light-transmitting layer (TPL) can transmit incident light as is. For example, the light-transmitting layer (TPL) can transmit the third light emitted from the plurality of light-emitting elements (LE) of the third subpixel (SPX3) as is.

[0126] FIG. 6 is a cross-sectional view showing an example of a cross-section of a display panel corresponding to the line I1-I1' of FIG. 5. FIG. 7 is a cross-sectional view showing in detail an example of area A of FIG. 6.

[0127] Referring to FIGS. 6 and FIGS. 7, the substrate (SUB) may be made of an insulating material such as glass or a polymer resin. If the substrate (SUB) is made of a polymer resin, it may be a stretchable flexible substrate. The polymer resin may be an acrylic resin, an epoxy resin, a phenolic resin, a polyamide resin, or a polyimide resin.

[0128] A barrier film (BR) may be disposed on a substrate (SUB). The barrier film (BR) is a film intended to protect the transistors of the thin-film transistor layer (TFTL) and the light-emitting elements (LE) disposed on the thin-film transistor layer (TFTL) from moisture penetrating through the substrate (SUB), which is susceptible to moisture permeability. The barrier film (BR) may be composed of a plurality of alternately stacked inorganic films.

[0129] A thin-film transistor (TFT1) may be disposed on the barrier film (BR). The thin-film transistor (TFT1) may be either the fourth transistor (ST4) or the sixth transistor (ST6) shown in FIG. 4. The thin-film transistor (TFT1) may include a first active layer (ACT1) and a first gate electrode (G1).

[0130] A first active layer (ACT1) of a thin-film transistor (TFT1) may be disposed on a barrier film (BR). The first active layer (ACT1) of the thin-film transistor (TFT1) may include polycrystalline silicon, single-crystal silicon, low-temperature polycrystalline silicon, or amorphous silicon. Alternatively, the first active layer (ACT1) of the thin-film transistor (TFT1) may be made of an oxide semiconductor including IGZO (indium (In), gallium (Ga), zinc (Zn), and oxygen (O)), IGZTO (indium (In), gallium (Ga), zinc (Zn), tin (Sn), and oxygen (O)), or IGTO (indium (In), gallium (Ga), tin (Sn), and oxygen (O)).

[0131] The first active layer (ACT1) may include a first channel region (CHA1), a first source region (S1), and a first drain region (D1). The first channel region (CHA1) may be a region that overlaps with the first gate electrode (G1) in the third direction (DR3), which is the thickness direction of the substrate (SUB). The first source region (S1) may be disposed on one side of the first channel region (CHA1), and the first drain region (D1) may be disposed on the other side of the first channel region (CHA1). The first source region (S1) and the first drain region (D1) may be regions that do not overlap with the first gate electrode (G1) in the third direction (DR3). The first source region (S1) and the first drain region (D1) may be regions that have conductivity by doping ions into a semiconductor material.

[0132] A first gate insulating film (131) may be disposed on the first channel region (CHA1), the first source region (S1), and the first drain region (D1) of the thin film transistor (TFT1).

[0133] A first gate metal layer may be disposed on the first gate insulating film (131). The first gate metal layer may include a first gate electrode (G1) and a first capacitor electrode (CAE1) of a thin-film transistor (TFT1). The first gate electrode (G1) may overlap with the first active layer (ACT1) in the third direction (DR3). Although the first gate electrode (G1) and the first capacitor electrode (CAE1) are shown as being disposed apart from each other in FIG. 6, if the thin-film transistor (TFT1) is the driving transistor (DT) of FIG. 4, the first gate electrode (G1) and the first capacitor electrode (CAE1) may be electrically or physically connected to each other. Alternatively, if the thin-film transistor (TFT1) is any one of the first to sixth transistors (ST1 to ST6) of FIG. 4, the first gate electrode (G1) and the first capacitor electrode (CAE1) may not be electrically or physically connected to each other.

[0134] A second gate insulating film (132) may be disposed on the first gate electrode (G1) and the first capacitor electrode (CAE1) of the thin-film transistor (TFT1).

[0135] A second gate metal layer may be disposed on the second gate insulating film (132). The second gate metal layer may include a second capacitor electrode (CAE2). The second capacitor electrode (CAE2) may overlap with the first capacitor electrode (CAE1) of the thin film transistor (TFT1) in the third direction (DR3). Since the second gate insulating film (132) has a predetermined dielectric constant, a capacitor (C1 in FIG. 4) may be formed by the first capacitor electrode (CAE1), the second capacitor electrode (CAE2), and the second gate insulating film (132) disposed between them.

[0136] A first interlayer insulating film (141) may be disposed on the second capacitor electrode (CAE2).

[0137] A first data metal layer may be disposed on the interlayer insulating film (141). The first data metal layer may include a first source connection electrode (PCE1). The first source connection electrode (PCE1) may be connected to a first drain region (D1) of a first active layer (ACT1) through a first source contact hole (PCT1) penetrating the first gate insulating film (131), the second gate insulating film (132), and the interlayer insulating film (141).

[0138] A first flattening film (160) for flattening the step difference caused by the thin-film transistor (TFT1) may be disposed on the first source connection electrode (PCE1).

[0139] A second data metal layer may be disposed on the first planarization film (160). The second data metal layer may include a second source connection electrode (PCE2). The second source connection electrode (PCE2) may be connected to the first source connection electrode (PCE1) through a second source contact hole (PCT2) that penetrates the first planarization film (160).

[0140] A second planarization film (180) may be placed on the second source connection electrode (PCE2).

[0141] The barrier film (BR), the first gate insulating film (131), the second gate insulating film (132), and the interlayer insulating film (141) are inorganic films, for example, silicon nitride (SiN x , 0 <x≤5, e.g. Si3N4), 질화 산화 실리콘(SiO x N y , 0 <x≤5, 0≤y≤5, e.g. SiON or Si2N2O), 산화 실리콘(SiOx, 0<x≤5, e.g.SiO2), 산화 티타늄(TiOx, 0<x≤5, e.g.TiO2), 및 / 또는 산화 알루미늄(AlOx, 0<x≤5, e.g.Al2O3)으로 형성될 수 있다.

[0142] The first gate metal layer, the second gate metal layer, the first data metal layer, and the second data metal layer may be formed as a single layer or a multilayer composed of any one of molybdenum (Mo), aluminum (Al), chromium (Cr), gold (Au), titanium (Ti), nickel (Ni), neodymium (Nd), and copper (Cu), or an alloy thereof.

[0143] The first flattening film (160) and the second flattening film (180) can be formed from organic films such as acrylic resin, epoxy resin, phenolic resin, polyamide resin, and polyimide resin.

[0144] A light-emitting element layer may be disposed on the second planarization film (180). The light-emitting element layer may include pixel electrodes (PXE1, PXE2, PXE3), light-emitting elements (LE), a common electrode (CE), and an organic film (210, 211, 212).

[0145] A pixel electrode layer may be disposed on the second planarization film (180). The pixel electrode layer may include a first pixel electrode (PXE1), a second pixel electrode (PXE2), and a third pixel electrode (PXE3). Each of the pixel electrodes (PXE1, PXE2, PXE3) may be connected to a second source connection electrode (PCE2) through a pixel connection hole (CT1 / CT2 / CT3 in FIG. 5) penetrating the second planarization film (180). Each of the pixel electrodes (PXE1, PXE2, PXE3) may be connected to a first source region (S1) or a first drain region (D1) of a thin film transistor (TFT1) through the first source connection electrode (PCE1) and the second source connection electrode (PCE2). Therefore, a voltage controlled by the thin film transistor (TFT1) may be applied to each of the pixel electrodes (PXE1, PXE2, PXE3).

[0146] The pixel electrode layer may be formed as a single layer or a multilayer composed of any one of molybdenum (Mo), aluminum (Al), chromium (Cr), gold (Au), titanium (Ti), nickel (Ni), neodymium (Nd), and copper (Cu), or an alloy thereof. For example, to lower the resistance of each of the pixel electrodes (PXE1, PXE2, PXE3), the pixel electrode layer may be made of copper (Cu), which has low sheet resistance.

[0147] A first organic film (210) may be disposed on each of the pixel electrodes (PXE1, PXE2, PXE3). The first organic film (210) serves to temporarily fix or adhere the plurality of light-emitting elements (LE) to prevent the plurality of light-emitting elements (LE) from tilting or falling over during the process of transferring the plurality of light-emitting elements (LE) to the display panel (100). That is, the first organic film (210) may be a film for temporarily adhering the plurality of light-emitting elements (LE) on each of the pixel electrodes (PXE1, PXE2, PXE3). To facilitate temporary adhesion, the thickness of the first organic film (210) may be greater than the thickness of each of the pixel electrodes (PXE1, PXE2, PXE3) and greater than the thickness of the contact electrode (CTE).

[0148] Since the first organic film (210) is a major feature of the present invention, a detailed description will be provided later.

[0149] It may be a photosensitive organic film such as a photoresist. Alternatively, the first organic film (210) may be formed of an acrylic resin, an epoxy resin, a phenolic resin, a polyamide resin, a polyimide resin, etc.

[0150] A plurality of light-emitting elements (LE) may be disposed on a first organic film (210). FIG. 6 indicates an LED having a structure in which each of the plurality of light-emitting elements (LE) is sequentially disposed in a third direction (DR3) in which a semiconductor layer (SEM1), an active layer (MQW), and a second semiconductor layer (SEM2) are extended in a third direction (DR3).

[0151] Each of the plurality of light-emitting elements (LE) may have an inverted taper cross-sectional shape. For example, each of the plurality of light-emitting elements (LE) may have a trapezoidal cross-sectional shape in which the width of the top surface is wider than the width of the bottom surface.

[0152] Each of the plurality of light-emitting elements (LE) may be formed of an inorganic material such as gallium nitride (GaN). Each of the plurality of light-emitting elements (LE) may have a length in a first direction (DR1), a length in a second direction (DR2), and a length in a third direction (DR3), each ranging from several μm to several hundred μm. For example, each of the plurality of light-emitting elements (LE) may have a length in a first direction (DR1), a length in a second direction (DR2), and a length in a third direction (DR3), each ranging from approximately 100 μm or less.

[0153] Each of the plurality of light-emitting elements (LE) can be formed by growing on a semiconductor substrate such as a silicon substrate or a sapphire substrate. The plurality of light-emitting elements (LE) can be transferred directly from the semiconductor substrate onto the pixel electrodes (PXE1, PXE2, PXE3) of the display panel (100). Alternatively, the plurality of light-emitting elements (LE) can be transferred onto the pixel electrodes (PXE1, PXE2, PXE3) of the display panel (100) via an electrostatic method using an electrostatic head or a stamp method using an elastic polymer material such as PDMS (polydimethylsiloxane) or silicon as a transfer substrate.

[0154] The light-emitting element (LE) may include a conductive layer (E1), a semiconductor stack (STC), a contact electrode (CTE), and a protective film (INS). The semiconductor stack (STC) may include a first semiconductor layer (SEM1), an active layer (MQW), and a second semiconductor layer (SEM2) arranged sequentially in a third direction (DR3).

[0155] A conductive layer (E1) may be disposed on the lower surface of a first semiconductor layer (SEM1). Although FIG. 7 illustrates a case where the conductive layer (E1) covers the entire lower surface of the first semiconductor layer (SEM1), the embodiments of this specification are not limited thereto. As an example, the conductive layer (E1) may be disposed on a part of the lower surface of the first semiconductor layer (SEM1). The conductive layer (E1) may include any one of molybdenum (Mo), aluminum (Al), chromium (Cr), gold (Au), titanium (Ti), nickel (Ni), neodymium (Nd), and copper (Cu).

[0156] The first semiconductor layer (SEM1) may be placed on the contact electrode (CTE). The length of the first direction (DR1) or the second direction (DR2) of the lower surface of the first semiconductor layer (SEM1) may be smaller than the length of the first direction (DR1) or the second direction (DR2) of the contact electrode (CTE). The first semiconductor layer (SEM1) may be made of a semiconductor material layer doped with a first conductivity type dopant such as magnesium (Mg), zinc (Zn), calcium (Ca), strontium (Sr), barium (Ba), etc., for example, gallium nitride (GaN).

[0157] The active layer (MQW) may be disposed on the first semiconductor layer (SEM1). The active material layer (MQWL) may include the same semiconductor material layer as the first semiconductor material layer (SEML1) and the second semiconductor material layer (SEML2). For example, if the first semiconductor material layer (SEML1) and the second semiconductor material layer (SEML2) include gallium nitride (GaN), the active material layer (MQWL) may also include gallium nitride (GaN). For example, the active material layer (MQWL) may include at least one of gallium nitride (GaN), indium gallium nitride (InGaN), and aluminum gallium nitride (AlGaN). The active layer (MQW) may emit light through the coupling of electron-hole pairs according to an electric signal applied through the first semiconductor layer (SEM1) and the second semiconductor layer (SEM2).

[0158] The active layer (MQW) may include a material having a single or multiple quantum well structure. When the active layer (MQW) includes a material having a multiple quantum well structure, it may have a structure in which multiple well layers and barrier layers are alternately stacked. In this case, the well layers may be formed of InGaN, and the barrier layers may be formed of GaN or AlGaN, but are not limited thereto. Alternatively, the active layer (MQW) may have a structure in which semiconductor materials with large band gap energy and semiconductor materials with small band gap energy are alternately stacked, or it may include different Group 3 to Group 5 semiconductor materials depending on the wavelength of the emitted light.

[0159] When the active layer (MQW) contains indium gallium nitride (InGaN), the color of the emitted light may vary depending on the content of indium (In). For example, as the content of indium (In) increases, the wavelength band of the light emitted by the active layer shifts to a red wavelength band, and as the content of indium (In) decreases, the wavelength band of the light emitted by the active layer shifts to a blue wavelength band. For example, the content of indium (In) in the active layer (MQW) of a light-emitting device (LE) that emits a third light (light in the blue wavelength band) may be approximately 10 wt% to 20 wt%.

[0160] The second semiconductor layer (SEM2) can be disposed on the active layer (MQW). The second semiconductor layer (SEM2) may be a semiconductor material layer doped with a second conductivity type dopant, such as silicon (Si), germanium (Ge), tin (Sn), etc., for example, gallium nitride (GaN).

[0161] An electron blocking layer may be placed between the first semiconductor layer (SEM1) and the active layer (MQW). The electron blocking layer may be a layer designed to suppress or prevent too many electrons from flowing into the active layer (MQW). For example, the electron blocking layer may be AlGaN or p-AlGaN doped with p-type Mg. The electron blocking layer may be omitted.

[0162] A superlattice layer may be disposed between the active layer (MQW) and the second semiconductor layer (SEM2). The superlattice layer may be a layer for relieving stress between the second semiconductor layer (SEM2) and the active layer (MQW). For example, the superlattice layer may be formed of InGaN or GaN. The superlattice layer may be omitted.

[0163] A protective film (INS) may be disposed on the side of the first semiconductor layer (SEM1), the side of the active layer (MQW), and the side of the second semiconductor layer (SEM2). The protective film (INS) may be a film for protecting the side of the light-emitting element (LE). The protective film (INS) may be an inorganic film, for example, silicon nitride (SiNx, 0 <x≤5, e.g. Si3N4), 질화 산화 실리콘(SiO x N y , 0 <x≤5, 0≤y≤5, e.g. SiON or Si2N2O), 산화 실리콘(SiOx, 0<x≤5, e.g.SiO2), 산화 티타늄(TiOx, 0<x≤5, e.g.TiO2), 및 / 또는 산화 알루미늄(AlOx, 0<x≤5, e.g.Al2O3)으로 형성될 수 있다.

[0164] The contact electrode (CTE) may be placed on the protective film (INS). The contact electrode (CTE) may be placed between the first organic film (210) and the protective film (INS). The contact electrode (CTE) may be in contact with the first organic film (210).

[0165] FIGS. 6 and 7 illustrate that the contact electrode (CTE) of each of the light-emitting elements (LE) is disposed on the first organic film (210), but the embodiments of this specification are not limited thereto. For example, the first organic film (210) may be disposed on the lower surface and part of the side surface of the contact electrode (CTE) of each of the light-emitting elements (LE). Alternatively, the first organic film (210) may be disposed on the side surface of the conductive layer (E1) of each of the light-emitting elements (LE). Alternatively, the first organic film (210) may be disposed on the side surface of the first semiconductor layer (SEM1), the side surface of the active layer (MQW), and the side surface of the second semiconductor layer (SEM2) of each of the light-emitting elements (LE). In this case, the first organic film (210) may be disposed on part of the side surface of the second semiconductor layer (SEM2).

[0166] The contact electrode (CTE) can be connected to the exposed conductive layer (E1) without being covered by the protective film (INS). As a result, even if one of the contact electrodes (CTE) is not connected to the conductive layer (E1) due to a process error, the other contact electrode (CTE) is connected to the conductive layer (E1), thereby preventing a defect in which the light-emitting element (LE) does not light up.

[0167] When the contact electrode (CTE) is formed of a metal with high reflectivity, light emitted from the active layer (MQW) of the light-emitting element (LE) that travels in the lateral direction of the light-emitting element (LE) can be reflected by a plurality of contact electrodes (CTE) and emitted to the upper surface of the light-emitting element (LE). Therefore, since the loss of light from the light-emitting element (LE) can be reduced, the light efficiency of the light-emitting element (LE) can be increased. Accordingly, to increase the light efficiency of the light-emitting element (LE), it is desirable for the contact electrode (CTE) to be positioned to cover most of the side of the semiconductor stack (STC).

[0168] The contact electrode (CTE) may include any one of molybdenum (Mo), aluminum (Al), chromium (Cr), gold (Au), titanium (Ti), nickel (Ni), neodymium (Nd), and copper (Cu). Specifically, to increase reflectivity, the plurality of contact electrodes (CTE) may be formed into a two-layer structure of chromium (Cr) and gold (Au), a three-layer structure of titanium (Ti), aluminum (Al), and titanium (Ti), or a three-layer structure of ITO (Indium Tin Oxide), silver (Ag), and ITO (Indium Tin Oxide).

[0169] The connecting electrode (BE) connects the contact electrode (CTE) of the light-emitting element (LE) with one of the pixel electrodes (PXE1, PXE2, PXE3). The connecting electrode (BE) can be connected to one of the pixel electrodes (PXE1, PXE2, PXE3) exposed through a connecting hole (BH) penetrating the first organic film (210). Additionally, the connecting electrode (BE) can be positioned on the upper surface of the first organic film (210) and on the side of the contact electrode (CTE). Additionally, the connecting electrode (BE) can be positioned on a portion of the side of the light-emitting element (LE). For example, the connecting electrode (BE) can be positioned on a portion of the protective film (INS) of the light-emitting element (LE).

[0170] The connecting electrode (BE) may include any one of molybdenum (Mo), aluminum (Al), chromium (Cr), gold (Au), titanium (Ti), nickel (Ni), neodymium (Nd), and copper (Cu). Alternatively, the connecting electrode (BE) may be made of a transparent conductive material (TCO) such as indium tin oxide (ITO) and indium zinc oxide (IZO) that can transmit light.

[0171] When the connecting electrode (BE) is made of a highly reflective metallic material such as aluminum (Al), light emitted from the active layer (MQW) of the light-emitting element (LE) that travels in the lateral direction of the light-emitting element (LE) can be reflected from the connecting electrode (BE) and travel in the upward direction of the light-emitting element (LE). Accordingly, light loss from the light-emitting element (LE) can be reduced, thereby increasing the light efficiency of the light-emitting element (LE).

[0172] The third organic film (211) may be positioned to cover a portion of the side of a plurality of light-emitting elements (LE). Additionally, the third organic film (211) may be positioned to cover a connecting electrode (BE), but at least a portion of the connecting electrode (BE) may be exposed and not covered by the third organic film (211).

[0173] The fourth organic film (212) may be disposed on the third organic film (211). The fourth organic film (212) may be disposed to cover a portion of the side of each of the plurality of light-emitting elements (LE). The fourth organic film (212) may be disposed on at least a portion of the connecting electrode (BE) that is exposed and not covered by the third organic film (211). The upper surface of each of the plurality of light-emitting elements (LE) may be exposed and not covered by the fourth organic film (212).

[0174] The third organic film (211) and the fourth organic film (212) are layers for flattening the step difference caused by the plurality of light-emitting elements (LE). If the height of the third organic film (211) is arranged to cover most of the side of each of the plurality of light-emitting elements (LE), the fourth organic film (212) may be omitted.

[0175] A common electrode (CE) may be disposed on the upper surface of each of the plurality of light-emitting elements (LE) and on the upper surface of the fourth organic film (212). The common electrode (CE) may be a common layer formed in common on the first subpixel (SPX1), the second subpixel (SPX2), and the third subpixel (SPX3). The common electrode (CE) may be made of a transparent conductive material (TCO) such as Indium Tin Oxide (ITO) and Indium Zinc Oxide (IZO) that can transmit light.

[0176] Meanwhile, pixel electrodes (PXE1, PXE2, PXE3) may be referred to as anode electrodes or first electrodes, and a common electrode (CE) may be referred to as cathode electrodes or second electrodes.

[0177] The first capping layer (CAP1) can be placed on the common electrode (CE).

[0178] A light-blocking layer (BM), a first light-converting layer (QDL1), a second light-converting layer (QDL2), and a light-transmitting layer (TPL) may be disposed on the first capping layer (CAP1). The first light-converting layer (QDL1), the second light-converting layer (QDL2), and the light-transmitting layer (TPL) may be formed by the partitions of the light-blocking layer (BM). Therefore, the first light-converting layer (QDL1) may be disposed on the first capping layer (CAP1) in the first subpixel (SPX1), the second light-converting layer (QDL2) may be disposed on the first capping layer (CAP1) in the second subpixel (SPX2), and the light-transmitting layer (TPL) may be disposed on the first capping layer (CAP1) in the third subpixel (SPX3). The light-blocking layer (BM) may overlap with the third organic film (211) and the fourth organic film (212) in the third direction (DR3) and may not overlap with the plurality of light-emitting elements (LE).

[0179] The first light conversion layer (QDL1) can convert a portion of the third light (light in the blue wavelength band) incident from the light-emitting element (LE) into the first light (light in the red wavelength band). The first light conversion layer (QDL1) may include a first base resin (BRS1) and a first wavelength conversion particle (WCP1). The first base resin (BRS1) may include a light-transmitting organic material. The first wavelength conversion particle (WCP1) can convert a portion of the third light (light in the blue wavelength band) incident from the light-emitting element (LE) into the first light (light in the red wavelength band).

[0180] The second light conversion layer (QDL2) can convert a portion of the third light (light in the blue wavelength band) incident from the light-emitting element (LE) into second light (light in the green wavelength band). It may include a second base resin (BRS2) and a second wavelength conversion particle (WCP2). The second base resin (BRS2) may include a transparent organic material. The second wavelength conversion particle (WCP2) can convert a portion of the third light (light in the blue wavelength band) incident from the light-emitting element (LE) into second light (light in the green wavelength band).

[0181] The light-transmitting layer (TPL) may include a light-transmitting organic material.

[0182] For example, the first base resin (BRS1), the second base resin (BRS2), and the light-transmitting layer (TPL) may include epoxy resin, acrylic resin, cardo resin, or imide resin, etc. The first and second wavelength conversion particles (WCP1, WCP2) may be quantum dots (QD), quantum rods, fluorescent materials, or phosphorescent materials.

[0183] The light-blocking layer (BM) may include a first light-blocking layer (BM1) and a second light-blocking layer (BM2) that are sequentially stacked. The length of the first direction (DR1) or the length of the second direction (DR2) of the first light-blocking layer (BM1) may be wider than the length of the first direction (DR1) or the length of the second direction (DR2) of the second light-blocking layer (BM2). The first light-blocking layer (BM1) and the second light-blocking layer (BM2) may be formed from organic films such as acrylic resin, epoxy resin, phenolic resin, polyamide resin, or polyimide resin. The first light-blocking layer (BM1) and the second light-blocking layer (BM2) may include a light-blocking material to prevent light from a light-emitting element (LE) of one subpixel from proceeding to an adjacent subpixel. For example, the first light-blocking layer (BM1) and the second light-blocking layer (BM2) may include an inorganic black pigment such as carbon black or an organic black pigment.

[0184] The second capping layer (CAP2) may be disposed on the first capping layer (CAP1) and the light-blocking layer (BM). The second capping layer (CAP2) may be disposed on the side and top surface of the light-blocking layer (BM). For example, the second capping layer (CAP2) may be disposed on the side of the first light-blocking layer (BM1) and on the side and top surface of the second light-blocking layer (BM2).

[0185] A reflective film (RF) may be disposed between the light-blocking layer (BM) and the first light-converting layer (QDL1), between the light-blocking layer (BM) and the second light-converting layer (QDL2), and between the light-blocking layer (BM) and the light-transmitting layer (TPL). The reflective film (RF) may be disposed on a second capping layer (CAP2) disposed on the side of the first light-blocking layer (BM1) and the side of the second light-blocking layer (BM2). The reflective film (RF) serves to reflect light traveling in a lateral direction from the first light-converting layer (QDL1), the second light-converting layer (QDL2), and the light-transmitting layer (TPL).

[0186] The reflective film (RF) may include a highly reflective metallic material such as aluminum (Al). The thickness of the reflective film (RF) may be approximately 0.1 μm.

[0187] Alternatively, the reflective film (RF) may comprise a pair of first and second layers, M (where M is an integer greater than or equal to 2), having different refractive indices to function as Distributed Bragg Reflectors (DBRs). In this case, M first layers and M second layers may be arranged alternately. The first and second layers are inorganic films, for example, silicon nitride (SiNx, 0 <x≤5, e.g. Si3N4), 질화 산화 실리콘(SiO x N y , 0 <x≤5, 0≤y≤5, e.g. SiON or Si2N2O), 산화 실리콘(SiOx, 0<x≤5, e.g.SiO2), 산화 티타늄(TiOx, 0<x≤5, e.g.TiO2), 또는 산화 알루미늄(AlOx, 0<x≤5, e.g.Al2O3)으로 형성될 수 있다.

[0188] The third capping layer (CAP3) can be disposed on the second capping layer (CAP2), the first light conversion layer (QDL1), the second light conversion layer (QDL2), and the light transmission layer (TPL).

[0189] The first capping layer (CAP1), the second capping layer (CAP2), and the third capping layer (CAP3) are inorganic films, for example, silicon nitride (SiNx, 0 <x≤5, e.g. Si3N4), 질화 산화 실리콘(SiO x N y, 0 <x≤5, 0≤y≤5, e.g. SiON or Si2N2O), 산화 실리콘(SiOx, 0<x≤5, e.g.SiO2), 산화 티타늄(TiOx, 0<x≤5, e.g.TiO2), 또는 산화 알루미늄(AlOx, 0<x≤5, e.g.Al2O3)으로 형성될 수 있다. 제1 광 변환층(QDL1), 제2 광 변환층(QDL2), 및 광 투과층(TPL)은 제1 캡핍층(CAP1), 제2 캡핑층(CAP2), 및 제3 캡핑층(CAP3)에 의해 봉지될 수 있다.

[0190] A fifth organic film (213) may be disposed on the third capping layer (CAP3). A plurality of color filters (CF1, CF2, CF3) may be disposed on the fifth organic film (213). The plurality of color filters (CF1, CF2, CF3) may include first color filters (CF1), second color filters (CF2), and third color filters (CF3).

[0191] A first color filter (CF1) disposed in a first subpixel (SPX1) can transmit a first light (light in the red wavelength band) and absorb or block a third light (light in the blue wavelength band). Therefore, the first color filter (CF1) can transmit the first light (light in the red wavelength band) converted by the first light conversion layer (QDL1) among the third light (light in the blue wavelength band) emitted from the light-emitting element (LE), and can absorb or block the third light (light in the blue wavelength band) that is not converted by the first light conversion layer (QDL1). Accordingly, the first subpixel (SPX1) can emit the first light (light in the red wavelength band).

[0192] A second color filter (CF2) placed in the second subpixel (SPX2) can transmit second light (light in the green wavelength band) and absorb or block third light (light in the blue wavelength band). Therefore, the second color filter (CF2) can transmit second light (light in the green wavelength band) converted by the first light conversion layer (QDL1) among the third light (light in the blue wavelength band) emitted from the light-emitting element (LE), and can absorb or block third light (light in the blue wavelength band) that is not converted by the first light conversion layer (QDL1). Accordingly, the second subpixel (SPX2) can emit second light (light in the green wavelength band).

[0193] A third color filter (CF3) placed in a third subpixel (SPX3) can transmit third light (light in the blue wavelength band). Therefore, the third color filter (CF3) can transmit third light (light in the blue wavelength band) emitted from a light-emitting element (LE) passing through a light-transmitting layer (TPL). Accordingly, the third subpixel (SPX3) can emit third light (light in the blue wavelength band).

[0194] The first color filter (CF1), the second color filter (CF2), and the third color filter (CF3) that overlap in the third direction (DR3) can overlap with the light-blocking layer (BM) in the third direction (DR3).

[0195] A sixth organic film (214) for flattening can be placed on a plurality of color filters (CF1, CF2, CF3).

[0196] The fifth organic film (213) and the sixth organic film (214) can be formed from acrylic resin, epoxy resin, phenolic resin, polyamide resin, polyimide resin, etc.

[0197] FIG. 8 is a layout diagram showing pixels of a display area according to one embodiment.

[0198] The embodiment of FIG. 8 differs from the embodiment of FIG. 5 in that the light-emitting element (LE) in each of the first subpixel (SPX1), the second subpixel (SPX2), and the third subpixel (SPX3) is placed on the pixel electrode (PXE1 / PXE2 / PXE3) and the common electrode (CE1 / CE2 / CE3). In the embodiment of FIG. 8, descriptions that overlap with the embodiment of FIG. 5 are omitted.

[0199] Referring to FIG. 8, pixel electrodes (PXE1 / PXE2 / PXE3) and common electrodes (CE1 / CE2 / CE3) may be arranged in a second direction (DR2) at each of the first subpixel (SPX1), the second subpixel (SPX2), and the third subpixel (SPX3). Each of the pixel electrodes (PXE1, PXE2, PXE3) and the common electrodes (CE1, CE2, CE3) may have a rectangular planar shape, but the embodiments of the present specification are not limited thereto. Additionally, the area of ​​the first pixel electrode (PXE1) may be the same as the area of ​​the first common electrode (CE1), the area of ​​the second pixel electrode (PXE2) may be the same as the area of ​​the second common electrode (CE2), and the area of ​​the third pixel electrode (PXE3) may be the same as the area of ​​the third common electrode (CE3), but the embodiments of the present specification are not limited thereto.

[0200] When the light conversion efficiency of the second light conversion layer (QDL2) is lower than the light conversion efficiency of the first light conversion layer (QDL1), the area of ​​the second pixel electrode (PXE2) may be larger than the area of ​​the first pixel electrode (PXE1), and the area of ​​the second common electrode (CE2) may be larger than the area of ​​the first common electrode (CE1). Additionally, since the light transmission layer (TPL) transmits the light of the light-emitting element (LE) as is, while the first light conversion layer (QDL1) must convert the light, the area of ​​the first pixel electrode (PXE1) may be larger than the area of ​​the third pixel electrode (PXE3), and the area of ​​the first common electrode (CE1) may be larger than the area of ​​the third common electrode (CE3).

[0201] In the first subpixel (SPX1), the first pixel electrode (PXE1) and the first common electrode (CE1) may be spaced apart in the second direction (DR2). In the second subpixel (SPX2), the second pixel electrode (PXE2) and the second common electrode (CE2) may be spaced apart in the second direction (DR2). In the third subpixel (SPX3), the third pixel electrode (PXE3) and the third common electrode (CE3) may be spaced apart in the second direction (DR2).

[0202] The first common electrode (CE1) can be connected to a second power line (VSL) to which a second driving voltage (VSS) is applied through a first common connection hole (CT4). The second common electrode (CE2) can be connected to the second power line (VSL) through a second common connection hole (CT5). The third common electrode (CE3) can be connected to the second power line (VSL) through a third common connection hole (CT6). Therefore, the second driving voltage (VSS) can be applied to each of the common electrodes (CE1, CE2, CE3).

[0203] In each of the first subpixel (SPX1), the second subpixel (SPX2), and the third subpixel (SPX3), the light-emitting element (LE) is placed on the pixel electrode (PXE1 / PXE2 / PXE3) and the common electrode (CE1 / CE2 / CE3), so the length of the second direction (DR2) of the light-emitting element (LE) may be longer than the length of the first direction (DR1).

[0204] FIG. 9 is a cross-sectional view showing an example of a cross-section of a display panel corresponding to the line I2-I2' of FIG. 8. FIG. 10 is a cross-sectional view showing in detail an example of area B of FIG. 9.

[0205] The embodiments of FIGS. 9 and 10 differ from the embodiments of FIGS. 6 and 7 in that the light-emitting element (LE) is a flip-type micro LED. In the embodiments of FIGS. 9 and 10, descriptions that overlap with the embodiments of FIGS. 6 and 7 are omitted.

[0206] Referring to FIGS. 9 and 10, a pixel electrode layer including pixel electrodes (PXE1, PXE2, PXE3) and common electrodes (CE1, CE2, CE3) can be disposed on a second planarization film (180).

[0207] The light-emitting element (LE) may be a flip-type micro LED. A flip-type micro LED refers to an LED in which contact electrodes (CTE1, CTE2) are formed on one side (e.g., the bottom side) of the light-emitting element (LE).

[0208] The semiconductor stack (STC) of the light-emitting element (LE) may further include a third semiconductor layer (SEM3). The third semiconductor layer (SEM3) may be disposed on the second semiconductor layer (SEM2).

[0209] The third semiconductor layer (SEM3) is a semiconductor material layer in which the concentration of an n-type dopant is lower than a threshold value and may be referred to as an un-doped semiconductor layer. For example, the third semiconductor layer (SEM3) may be indium aluminum gallium nitride (InAlGaN), gallium nitride (GaN), aluminum gallium nitride (AlGaN), indium gallium nitride (InGaN), aluminum nitride (AlN), or indium nitride (InN) in which the concentration of an n-type dopant is lower than a threshold value.

[0210] FIG. 10 illustrates that a protective film (INS) is disposed on the sides of the first semiconductor layer (SEM1), the sides of the active layer (MQW), and the sides of the second semiconductor layer (SEM2) of the semiconductor stack (STC), but is not disposed on the sides of the third semiconductor layer (SEM3); however, embodiments of the present specification are not limited thereto. For example, the protective film (INS) may be disposed on the sides of the first semiconductor layer (SEM1), the sides of the active layer (MQW), the sides of the second semiconductor layer (SEM2), and the sides of the third semiconductor layer (SEM3) of the semiconductor stack (STC).

[0211] A hole (LEH) may be formed that penetrates the conductive layer (E1), the first semiconductor layer (SEM1), and the active layer (MQW) of the light-emitting element (LE) to expose the second semiconductor layer (SEM2). The hole (LEH) may have a circular planar shape, but the embodiments of this specification are not limited thereto. As an example, the hole (LEH) may have a polygonal planar shape such as an ellipse or a square.

[0212] Additionally, the protective film (INS) may be disposed on the sidewall of the conductive layer (E1) exposed in the hole (LEH), the sidewall of the first semiconductor layer (SEM1), and the sidewall of the active layer (MQW). The protective film (INS) may not cover the second semiconductor layer (SEM2) in the hole (LEH). Therefore, the second semiconductor layer (SEM2) may be exposed without being covered by the protective film (INS).

[0213] The first contact electrode (CTE1) may be disposed on at least one side of the semiconductor stack (STC) and on at least one side of the conductive layer (E1) and on the lower surface. The first contact electrode (CTE1) may be disposed on the lower surface of the conductive layer (E1) that is exposed and not covered by a protective film (INS). Therefore, the first contact electrode (CTE1) may be electrically connected to the conductive layer (E1).

[0214] The second contact electrode (CTE2) may be disposed on at least one side of the semiconductor stack (STC), at least one side of the conductive layer (E1), and on the lower surface. In this case, while the first contact electrode (CTE1) is disposed on the first side of the semiconductor stack (STC) and the first side of the conductive layer (E1), the second contact electrode (CTE2) may be disposed on the second side of the semiconductor stack (STC) and the second side of the conductive layer (E1).

[0215] The second contact electrode (CTE2) can be placed on a protective film (INS) placed in the hole (LEH) and on a second semiconductor layer (SEM2) exposed in the hole (LEH) without being covered by the protective film (INS). Therefore, the second contact electrode (CTE2) can be electrically connected to the second semiconductor layer (SEM2) in the hole (LEH).

[0216] FIGS. 9 and 10 illustrate that the first contact electrode (CTE1) and the second contact electrode (CTE2) of each of the light-emitting elements (LE) are disposed on the first organic film (210), but the embodiments of this specification are not limited thereto. As an example, the first organic film (210) may be disposed on the lower surface and part of the side surface of the first contact electrode (CTE1) of each of the light-emitting elements (LE) and on the lower surface and part of the side surface of the second contact electrode (CTE2). Alternatively, the first organic film (210) may be disposed on the sides of the conductive layer (E1) of each of the light-emitting elements (LE). Alternatively, the first organic film (210) may be disposed on the sides of the first semiconductor layer (SEM1), the sides of the active layer (MQW), and the sides of the second semiconductor layer (SEM2) of each of the light-emitting elements (LE). In this case, the first organic film (210) can be placed on a portion of each of the sides of the second semiconductor layer (SEM2).

[0217] Each of the first contact electrode (CTE1) and the second contact electrode (CTE2) may be placed on three sides of the semiconductor stack (STC). For example, if the semiconductor stack (STC) includes first to fourth sides, the first contact electrode (CTE1) may be placed on the first side, the second side, and the third side, and the second contact electrode (CTE2) may be placed on the second side, the third side, and the fourth side.

[0218] The first connecting electrode (BE1) connects the first contact electrode (CTE1) of the light-emitting element (LE) and the pixel electrodes (PXE1 / PXE2 / PXE3). The first connecting electrode (BE1) can be connected to the exposed pixel electrodes (PXE1 / PXE2 / PXE3) through a first connecting hole (BH1) penetrating the first organic film (210). Additionally, the first connecting electrode (BE1) can be placed on the upper surface of the first organic film (210) and on the first contact electrode (CTE1).

[0219] The second connecting electrode (BE2) connects the second contact electrode (CTE2) of the light-emitting element (LE) with the common electrode (CE1 / CE2 / CE3). The second connecting electrode (BE2) can be connected to the common electrode (CE1 / CE2 / CE3) exposed through a second connecting hole (BH2) penetrating the first organic film (210). Additionally, the second connecting electrode (BE2) can be placed on the upper surface of the first organic film (210) and on the second contact electrode (CTE2).

[0220] Each of the first connecting electrode (BE1) and the second connecting electrode (BE2) may comprise any one of molybdenum (Mo), aluminum (Al), chromium (Cr), gold (Au), titanium (Ti), nickel (Ni), neodymium (Nd), and copper (Cu). Alternatively, each of the first connecting electrode (BE1) and the second connecting electrode (BE2) may be made of a transparent conductive material (TCO), such as indium tin oxide (ITO) and indium zinc oxide (IZO).

[0221] As shown in FIGS. 9 and 10, the conductive layer (E1) of the light-emitting element (LE) can be connected to the pixel electrodes (PXE1 / PXE2 / PXE3) through the first contact electrode (CTE1) and the first connecting electrode (BE1). Additionally, the second semiconductor layer (SEM2) of the light-emitting element (LE) can be connected to the common electrodes (CE1 / CE2 / CE3) through the second contact electrode (CTE2) and the second connecting electrode (BE2) formed in the hole (LEH).

[0222] FIG. 11 is a layout diagram showing pixels of a display area according to one embodiment.

[0223] The embodiment of FIG. 11 differs from the embodiment of FIG. 5 in that the light-emitting element (LE) in each of the first subpixel (SPX1), the second subpixel (SPX2), and the third subpixel (SPX3) is placed on the pixel electrode (PXE1 / PXE2 / PXE3) and the common electrode (CE1 / CE2 / CE3). In the embodiment of FIG. 11, descriptions that overlap with the embodiment of FIG. 5 are omitted.

[0224] Referring to FIG. 11, pixel electrodes (PXE1 / PXE2 / PXE3) and common electrodes (CE1 / CE2 / CE3) can be arranged in a second direction (DR2) at each of the first subpixel (SPX1), the second subpixel (SPX2), and the third subpixel (SPX3). The first pixel electrode (PXE1) and the first common electrode (CE1) can be spaced apart from each other. The second pixel electrode (PXE2) and the second common electrode (CE2) can be spaced apart from each other. The third pixel electrode (PXE3) and the third common electrode (CE3) can be spaced apart from each other.

[0225] Each of the first pixel electrode (PXE1), the second pixel electrode (PXE2), and the third pixel electrode (PXE3), the first common electrode (CE1), the second common electrode (CE2), and the third common electrode (CE3) may have a rectangular planar shape, but the embodiments of this specification are not limited thereto. Additionally, the area of ​​the first pixel electrode (PXE1) may be the same as the area of ​​the first common electrode (CE1), the area of ​​the second pixel electrode (PXE2) may be the same as the area of ​​the second common electrode (CE2), and the area of ​​the third pixel electrode (PXE3) may be the same as the area of ​​the third common electrode (CE3), but the embodiments of this specification are not limited thereto.

[0226] The first common electrode (CE1) can be connected to a second power line (VSL) to which a second driving voltage (VSS) is applied through a first common connection hole (CT4). The second common electrode (CE2) can be connected to the second power line (VSL) through a second common connection hole (CT5). The third common electrode (CE3) can be connected to the second power line (VSL) through a third common connection hole (CT6). Therefore, the second driving voltage (VSS) can be applied to each of the common electrodes (CE1, CE2, CE3).

[0227] The first connecting electrode (BE1) is connected to the first electrode (E1) of the light-emitting element (LE) and the pixel electrode (PXE1 / PXE2 / PXE3). The first connecting electrode (BE1) may overlap with at least a portion of the first electrode (E1). The first connecting electrode (BE1) may overlap with at least a portion of the pixel electrode (PXE1 / PXE2 / PXE3).

[0228] The second connecting electrode (BE2) can be connected to the second electrode (E2) of the light-emitting element (LE) and the common electrode (CE1 / CE2 / CE3). The second connecting electrode (BE2) can overlap with at least a portion of the second electrode (E2). The second connecting electrode (BE2) can overlap with at least a portion of the common electrode (CE1 / CE2 / CE3).

[0229] Each of the second power lines (VSL) may include a line portion (WP) extending in a first direction (DR1) and a protrusion (PP) protruding from the line portion (WP) in a second direction (DR2) and overlapping with a second pixel connection hole (CT2).

[0230] FIG. 12 is a cross-sectional view showing an example of a cross-section of a display panel corresponding to the line I3-I3' of FIG. 11. FIG. 13 is a cross-sectional view showing in detail an example of area C of FIG. 12.

[0231] The embodiments of FIGS. 12 and 13 differ from the embodiments of FIGS. 6 and 7 in that the light-emitting element (LE) is a lateral type micro LED. In the embodiments of FIGS. 12 and 13, descriptions that overlap with those of FIGS. 6 and 7 are omitted.

[0232] Referring to FIGS. 12 and 13, a pixel electrode layer comprising pixel electrodes (PXE1, PXE2, PXE3) and common electrodes (CE1, CE2, CE3) can be disposed on a second planarization film (180). The pixel electrodes (PXE1, PXE2, PXE3) and common electrodes (CE1, CE2, CE3) can be disposed apart from each other.

[0233] The pixel electrodes (PXE1 / PXE2 / PXE3) can be connected to the second source connection electrode (PCE2) through a pixel connection hole (CT1 / CT2 / CT3) penetrating the second planarization film (180). The pixel electrodes (PXE1 / PXE2 / PXE3) can be connected to the first source region (S1) or the first drain region (D1) of the thin-film transistor (TFT1) through the first source connection electrode (PCE1) and the second source connection electrode (PCE2). Therefore, a voltage controlled by the thin-film transistor (TFT1) can be applied to the pixel electrodes (PXE1 / PXE2 / PXE3).

[0234] The common electrodes (CE1 / CE2 / CE3) can be connected to the second power line (VSL) through a common connection hole (CT4 / CT5 / CT6) that penetrates the second flattening film (180). Therefore, the second driving voltage (VSS in FIG. 3) can be applied to the common electrodes (CE1 / CE2 / CE3).

[0235] When the pixel electrode layer is made of a metal material with high reflectivity, light emitted from the active layer (MQW) of the light-emitting element (LE) that travels in the downward direction of the light-emitting element (LE) can be reflected by the pixel electrodes (PXE1 / PXE2 / PXE3) and the common electrode (CE1 / CE2 / CE3) and travel in the upward direction of the light-emitting element (LE). Therefore, since the loss of light from the light-emitting element (LE) can be reduced, the light efficiency of the light-emitting element (LE) can be increased.

[0236] A first organic film (210) may be disposed on the pixel electrodes (PXE1, PXE2, PXE3) and common electrodes (CE1, CE2, CE3) in each of the sub-pixels (SPX1, SPX2, SPX3). The first organic film (210) serves to temporarily fix or adhere the light-emitting element (LE) during the process of transferring the light-emitting element (LE) to the display panel (100).

[0237] In each of the subpixels (SPX1, SPX2, SPX3), a light-emitting element (LE) can be placed on the first organic film (210). The light-emitting element (LE) is exemplified as a lateral type micro LED in which both the first electrode (E1) and the second electrode (E2) protrude to the upper surface of the light-emitting element (LE), allowing current to flow in the lateral direction.

[0238] The semiconductor stack (STC) of the light-emitting element (LE) may further include a third semiconductor layer (SEM3). The third semiconductor layer (SEM3) may be disposed on the first organic film (210), and the second semiconductor layer (SEM2) may be disposed on the third semiconductor layer (SEM3).

[0239] The third semiconductor layer (SEM3) is a semiconductor material layer in which the n-type dopant concentration is lower than a threshold value and may be referred to as an un-doped semiconductor layer. For example, the third semiconductor layer (SEM3) may be indium aluminum gallium nitride (InAlGaN), gallium nitride (GaN), aluminum gallium nitride (AlGaN), indium gallium nitride (InGaN), aluminum nitride (AlN), or indium nitride (InN) in which the n-type dopant concentration is lower than a threshold value.

[0240] FIG. 13 illustrates that a protective film (INS) is disposed on the sides of the first semiconductor layer (SEM1), the sides of the active layer (MQW), and the sides of the second semiconductor layer (SEM2) of the semiconductor stack (STC), but is not disposed on the sides of the third semiconductor layer (SEM3); however, embodiments of the present specification are not limited thereto. As an example, the protective film (INS) may be disposed on the sides of the first semiconductor layer (SEM1), the sides of the active layer (MQW), the sides of the second semiconductor layer (SEM2), and the sides of the third semiconductor layer (SEM3) of the semiconductor stack (STC).

[0241] A hole (LEH) may be formed that penetrates the conductive layer (E1), the first semiconductor layer (SEM1), and the active layer (MQW) of the light-emitting element (LE) to expose the second semiconductor layer (SEM2). The hole (LEH) may have a circular planar shape, but the embodiments of this specification are not limited thereto. As an example, the hole (LEH) may have a polygonal planar shape such as an ellipse or a square.

[0242] Additionally, the protective film (INS) may be disposed on the sidewall of the conductive layer (E1) exposed in the hole (LEH), the sidewall of the first semiconductor layer (SEM1), and the sidewall of the active layer (MQW). The protective film (INS) may not cover the second semiconductor layer (SEM2) in the hole (LEH). Therefore, the second semiconductor layer (SEM2) may be exposed without being covered by the protective film (INS).

[0243] The first contact electrode (CTE1) may be disposed on at least one side of the semiconductor stack (STC) and on at least one side of the conductive layer (E1) and on the lower surface. The first contact electrode (CTE1) may be disposed on the lower surface of the conductive layer (E1) that is exposed and not covered by a protective film (INS). Therefore, the first contact electrode (CTE1) may be electrically connected to the conductive layer (E1).

[0244] The second contact electrode (CTE2) may be disposed on at least one side of the semiconductor stack (STC), at least one side of the conductive layer (E1), and on the lower surface. In this case, while the first contact electrode (CTE1) is disposed on the first side of the semiconductor stack (STC) and the first side of the conductive layer (E1), the second contact electrode (CTE2) may be disposed on the second side of the semiconductor stack (STC) and the second side of the conductive layer (E1).

[0245] The second contact electrode (CTE2) can be placed on a protective film (INS) placed in the hole (LEH) and on a second semiconductor layer (SEM2) exposed in the hole (LEH) without being covered by the protective film (INS). Therefore, the second contact electrode (CTE2) can be electrically connected to the second semiconductor layer (SEM2) in the hole (LEH).

[0246] FIGS. 12 and 13 illustrate that the third semiconductor layer (SEM3) of each of the light-emitting elements (LE) is disposed on the first organic film (210), but the embodiments of this specification are not limited thereto. For example, the first organic film (210) may be disposed on the sides of the third semiconductor layer (SEM3) of each of the light-emitting elements (LE). Alternatively, the first organic film (210) may be disposed on a portion of the sides of each of the second semiconductor layer (SEM2) of each of the light-emitting elements (LE).

[0247] Each of the first contact electrode (CTE1) and the second contact electrode (CTE2) may be placed on three sides of the semiconductor stack (STC). For example, if the semiconductor stack (STC) includes first to fourth sides, the first contact electrode (CTE1) may be placed on the first side, the second side, and the third side, and the second contact electrode (CTE2) may be placed on the second side, the third side, and the fourth side.

[0248] The first connecting electrode (BE1) connects the first contact electrode (CTE1) of the light-emitting element (LE) and the pixel electrode (PXE1 / PXE2 / PXE3). The first connecting electrode (BE1) can be connected to the exposed pixel electrode (PXE1 / PXE2 / PXE3) through a first connecting hole (BH1) penetrating the first organic film (210). Additionally, the first connecting electrode (BE1) can be placed on the upper surface of the first organic film (210), on the side of the second semiconductor layer (SEM2) and on the side of the third semiconductor layer (SEM3), and on the first contact electrode (CTE1).

[0249] The second connecting electrode (BE2) connects the second contact electrode (CTE2) of the light-emitting element (LE) and the common electrode (CE1 / CE2 / CE3). The second connecting electrode (BE2) can be connected to the common electrode (CE1 / CE2 / CE3) exposed through a second connecting hole (BH2) penetrating the first organic film (210). Additionally, the second connecting electrode (BE2) can be placed on the upper surface of the first organic film (210), on the side of the second semiconductor layer (SEM2) and on the side of the third semiconductor layer (SEM3), and on the second contact electrode (CTE2).

[0250] Each of the first connecting electrode (BE1) and the second connecting electrode (BE2) may comprise any one of molybdenum (Mo), aluminum (Al), chromium (Cr), gold (Au), titanium (Ti), nickel (Ni), neodymium (Nd), and copper (Cu). Alternatively, each of the first connecting electrode (BE1) and the second connecting electrode (BE2) may be made of a transparent conductive material (TCO), such as indium tin oxide (ITO) and indium zinc oxide (IZO).

[0251] As shown in FIGS. 12 and 13, the conductive layer (E1) of the light-emitting element (LE) can be connected to the pixel electrodes (PXE1 / PXE2 / PXE3) through the first contact electrode (CTE1) and the first connecting electrode (BE1). Additionally, the second semiconductor layer (SEM2) of the light-emitting element (LE) can be connected to the common electrodes (CE1 / CE2 / CE3) through the second contact electrode (CTE2) and the second connecting electrode (BE2) formed in the hole (LEH).

[0252]

[0253] The first organic film (210), the third organic film (211), and the fourth organic film (212) serve to temporarily fix or adhere the plurality of light-emitting elements (LE) to prevent the plurality of light-emitting elements (LE) from tilting or falling over during the process of transferring the plurality of light-emitting elements (LE) to the display panel (100). To this end, the first organic film (210), the third organic film (211), and the fourth organic film (212) may include an adhesive organic film composition.

[0254] An adhesive organic film composition exposed to air may experience a decrease in adhesiveness as the curing rate of the adhesive organic film composition increases over time. If the curing rate of the adhesive organic film composition increases before transferring a plurality of light-emitting elements (LE) to the display panel (100), it may be difficult to fix the light-emitting elements (LE) to the display panel (100). In other words, it is necessary to prevent or reduce the increase in the curing rate until the plurality of light-emitting elements (LE) are fixed to the display panel (100).

[0255] As described above, in the organic film composition for adhesion of the organic film (210) according to one embodiment, the content of the monomer is increased and the content of the photoinitiator is decreased, so the fluidity and adhesiveness of the organic film composition for adhesion can be improved. As a result, the curing rate of the organic film (210) can be prevented or reduced until a plurality of light-emitting elements (LE) are fixed to the display panel (100), thereby improving the fixation of the light-emitting elements (LE) transferred to the display panel (100).

[0256] The stability of the adhesive organic film composition is high, so it can maintain high adhesiveness and fluidity even when exposed to air for a long time. When the adhesive organic film composition is exposed to air for a long time during the process of transferring a plurality of light-emitting elements (LE) to a display panel (100), the adhesive organic film composition does not harden, so the light-emitting elements (LE) can be easily fixed.

[0257] An adhesive organic film composition may comprise a monomer represented by the following chemical formula 1; a reactive unsaturated compound represented by the following chemical formula 2; a photoinitiator; and a solvent.

[0258]

[0259] In Chemical Formula 1, n and m are integers.

[0260]

[0261] For every 100 parts by weight of the adhesive organic film composition, the composition may comprise 25 to 50 parts by weight of a monomer represented by Formula 1; 5 to 10 parts by weight of the reactive unsaturated compound; 0.25 to 5 parts by weight of the photoinitiator; and 40 to 70 parts by weight of the solvent. If the monomer represented by Formula 1 is less than 25 parts by weight, the fluidity and adhesiveness of the adhesive organic film composition may be reduced. If the photoinitiator is more than 5 parts by weight, the fluidity of the adhesive organic film composition may be reduced.

[0262] The photoinitiator may include at least one of oxime compounds, acetophenone compounds, benzophenone compounds, thioxanthone compounds, benzoin compounds, triazine compounds, carbazole compounds, diketone compounds, sulfonium borate compounds, diazo compounds, imidazole compounds, and non-imidazole compounds. Preferably, the photoinitiator may be an oxime compound.

[0263] Oxime-based compounds include 2-(o-benzoyloxime)-1-[4-(phenylthio)phenyl]-1,2-octanedione, 1-(o-acetyloxime)-1-[9-ethyl-6-(2-methylbenzoyl)-9H-carbazole-3-yl]ethanolone, O-ethoxycarbonyl-α-oxyamino-1-phenylpropan-1-one, 2-dimethylamino-2-(4-methylbenzyl)-1-(4-morpholine-4-yl-phenyl)-butan-1-one, 1-(4-phenylsulfanylphenyl)-butan-1,2-dione2-oxime-O-benzoate, and 1-(4-phenylsulfanylphenyl)-octan-1,2-dione2-oxime-O-benzoate. It may include at least one of 1-(4-phenylsulfanylphenyl)-octane-1-on-oxime-O-acetate and 1-(4-phenylsulfanylphenyl)-butane-1-on-oxime-O-acetate, 1-(4-methylsulfanylphenyl)-butane-1-on-oxime-O-acetate, hydroxyimino-(4-methylsulfanylphenyl)-ethyl acetate-O-acetate and hydroxyimino-(4-methylsulfanylphenyl)-ethyl acetate-O-acetate.

[0264] Acetophenone-based compounds may include at least one of 2,2'-diethoxyacetophenone, 2,2'-dibutoxyacetophenone, 2-hydroxy-2-methylpropiophenone, pt-butyltrichloroacetophenone, pt-butyldichloroacetophenone, 4-chloroacetophenone, 2,2'-dichloro-4-phenoxyacetophenone, 2-methyl-1-(4-(methylthio)phenyl)-2-mopolinopropan-1-one and 2-benzyl-2-dimethylamino-1-(4-mopolinophenyl)-butan-1-one.

[0265] Benzophenone compounds may include at least one of benzophenone, benzoyl benzoic acid, methyl benzoyl benzoate, 4-phenyl benzophenone, hydroxybenzophenone, acrylated benzophenone, 4,4'-bis(dimethylamino)benzophenone, 4,4'-bis(diethylamino)benzophenone, 4,4'-dimethylaminobenzophenone, 4,4'-dichlorobenzophenone, and 3,3'-dimethyl-2-methoxybenzophenone.

[0266] Thioxantone-based compounds may include at least one of thioxantone, 2-chlorothioxantone, 2-methylthioxantone, isopropylthioxantone, 2,4-diethylthioxantone, 2,4-diisopropylthioxantone, and 2-chlorothioxantone.

[0267] Benzoin compounds may include at least one of benzoin, benzoin methyl ether, benzoin ethyl ether, benzoin isopropyl ether, benzoin isobutyl ether, and benzyldimethylketal.

[0268] Triazine compounds include 2,4,6-trichloro-s-triazine, 2-phenyl 4,6-bis(trichloromethyl)-s-triazine, 2-(3',4'-dimethoxystyryl)-4,6-bis(trichloromethyl)-s-triazine, 2-(4'-methoxynaphthyl)-4,6-bis(trichloromethyl)-s-triazine, 2-(p-methoxyphenyl)-4,6-bis(trichloromethyl)-s-triazine, 2-(p-tolyl)-4,6-bis(trichloromethyl)-s-triazine, 2-biphenyl 4,6-bis(trichloromethyl)-s-triazine, and bis(trichloromethyl)-6-styryl-s-triazine. It may include at least one of 2-(naphtho-1-yl)-4,6-bis(trichloromethyl)-s-triazine, 2-(4-methoxynaphtho-1-yl)-4,6-s(trichloromethyl)-s-triazine, 2-4-trichloromethyl(piperonyl)-6-triazine, and 2-4-trichloromethyl(4'-methoxystyryl)-6-triazine.

[0269] The adhesive organic film composition may further include an ionic initiator.

[0270] Ionic initiators generate ionic species or Lewis acids upon irradiation with active energy lines such as visible light, ultraviolet rays, X-rays, or electron beams, thereby initiating the polymerization reaction of ionic polymerizable compounds.

[0271] Ionic initiators are phosphorus-based anions ([(Rf) n PF 6-n ] - ), hexafluorophosphate anion (PF6 - ), hexafluoroantimonate anion (SbF6 - ), pentafluorohydroxyantimonate anion (SbF5(OH) - ), hexafluoroacetic acid anion (AsF6 - ), tetrafluoroborate anion (BF4 - ) and tetrakis(pentafluorophenyl)borate anion (B(C6F5)4 - It may include at least one of ).

[0272] Preferably, the ionic initiator may be a hexafluorophosphate anion.

[0273] The solvents are methanol, ethanol, dichloroethyl ether, n-butyl ether, diisoamyl ether, methylphenyl ether, tetrahydrofuran, ethylene glycol monomethyl ether, ethylene glycol monoethyl ether, methyl cellosolve acetate, ethyl cellosolve acetate, diethyl cellosolve acetate, methyl ethyl carbitol, diethyl carbitol, diethylene glycol monomethyl ether, diethylene glycol monoethyl ether, diethylene glycol dimethyl ether, diethylene glycol methyl ethyl ether, diethylene glycol diethyl ether, propylene glycol methyl ether acetate, propylene glycol propyl ether acetate, toluene, xylene, methyl ethyl ketone, cyclohexanone, 4-hydroxy-4-methyl-2-pentanone, methyl-n-propyl ketone, methyl-n-butyl ketone, methyl-n-amyl ketone, 2-Heptanone, ethyl acetate, n-butyl acetate, isobutyl acetate, methyl lactate, ethyl lactate, methyl oxyacetate, ethyl oxyacetate, butyl oxyacetate, methyl methoxyacetate, ethyl methoxyacetate, butyl methoxyacetate, methyl methoxyacetate, ethyl methoxyacetate, ethyl ethoxyacetate, 3-methyl oxypropionate, 3-ethyl oxypropionate, 3-methyl methoxypropionate, 3-ethyl methoxypropionate, 3-ethyl methoxypropionate, 3-ethyl ethoxypropionate, 3-methyl ethoxypropionate, 2-methyl oxypropionate, 2-ethyl oxypropionate, 2-propyl oxypropionate, 2-methyl methoxypropionate, 2-ethyl methoxypropionate, 2-ethyl methoxypropionate, 2-Methyl ethoxypropionate, 2-Methyl oxy-2-methylpropionate, 2-Ethyl oxy-2-methylpropionate, 2-Methyl-2-methylpropionate, 2-Ethoxy-2-methylpropionate, 2-Ethoxy-2-methylpropionate, 2-Ethyl hydroxypropionate, 2-Ethyl-2-methylpropionate, Ethyl hydroxyacetate, 2-Methyl-3-methylbutanoate, Ethyl pyruvate, N-Methylformamide, N,N-Dimethylformamide, N-Methylformanilad, N-Methylacetamide, N,N-Dimethylacetamide, N-Methylpyrrolidone, Dimethyl sulfoxide, Benzyl ethyl ether, Dihexyl ether, Acetylacetone, Isophorone, Capronic acid,It may include at least one of caprylic acid, 1-octanol, 1-nonanol, benzyl alcohol, benzyl acetate, ethyl benzoate, diethyl oxalate, diethyl maleate, γ-butyrolactone, ethylene carbonate, propylene carbonate, and phenyl cellosolve acetate. Preferably, it may be methyl methoxypropionate.

[0274] The present invention is to be explained in more detail through the following examples, but the following examples are for illustrative purposes only and are not intended to limit the scope of the present invention.

[0275] 1. Preparation of an adhesive organic film composition

[0276] [Example 1]

[0277] First, an adhesive organic film composition was prepared by mixing 50 parts by weight of a compound of Formula 1 as a monomer, 5 parts by weight of a compound of Formula 2 as a reactive unsaturated compound, 2 parts by weight of a compound of Formula 3 as a photoinitiator, 43 parts by weight of methyl 3-methoxypropionate as a solvent, and a small amount of hexafluorophosphate anion as an ionic initiator.

[0278] [Chemical Formula 3]

[0279]

[0280] [Comparative Example 1]

[0281] An adhesive organic film composition was prepared in the same manner as in Example 1, except that 10 parts by weight of the compound of Formula 1 as the monomer, 5 parts by weight of the compound of Formula 3 as the photoinitiator, and 80 parts by weight of methyl 3-methoxypropionate as the solvent were used.

[0282] Table 1 below shows the content of each material when preparing the adhesive organic film compositions of Example 1 and Comparative Example 1.

[0283] Content (parts by weight) Monomer Reactive unsaturated compound Photoinitiator Solvent Ionic initiator Example 1 50 52 43 small amount Comparative Example 1 10 55 80 small amount

[0284] [evaluation]

[0285] 1. Curing rate of adhesive organic film composition

[0286] The curing rate of the adhesive organic film compositions prepared in Example 1 and Comparative Example 1 was measured, and the results are shown in Fig. 14.

[0287] FIG. 14 is a graph showing the curing rate of an adhesive organic film composition according to one embodiment of the present invention.

[0288] Specifically, FIG. 14 shows the ratio (R) of the C=C bond peak intensity to the C=O bond peak intensity when measured by Fourier Transform Infrared Spectroscopy (FT-IR). C=C / C=O This is a graph measuring ) over time.

[0289] The hardening rate can be calculated using the following mathematical formula 1.

[0290]

[0291] In the above mathematical formula 1, the above I C=C is the C=C coupling peak intensity in the infrared spectroscopic spectrum, and the above I C=O is the C=O bond peak intensity in the infrared spectroscopic spectrum.

[0292] When the adhesive organic film composition undergoes curing, the carbon double bonds are converted into carbon single bonds. As the curing rate increases, the ratio of carbon double bonds may decrease. R C=C / C=O The higher the value, the lower the hardening rate, and R C=C / C=O A lower value indicates a higher hardening rate.

[0293] According to the results shown in FIG. 14, R of Example 1 is higher than that of Comparative Example 1. C=C / C=O It can be confirmed that the ratio of carbon double bonds in Example 1 is higher than the ratio of carbon double bonds in Comparative Example 1. In other words, it means that the curing rate of Example 1 is lower than the curing rate of Comparative Example 1.

[0294] R of Example 1 C=C / C=O It can be confirmed that the value remains similar even after 120 hours. This means that the adhesive organic film composition of Example 1 can maintain fluidity without curing progressing over time. When the adhesive organic film composition of Example 1, which can maintain high fluidity, is used to fix a light-emitting element (LE) to a display panel (100) of a display device, the stagnation time of the process can be ignored.

[0295] The adhesive organic film composition of the present invention and the R of the organic film using the adhesive organic film composition C=C / C=O It can be 0.28 or higher.

[0296] 2. Adhesion force of adhesive organic film composition

[0297] The adhesive strength of the adhesive organic film compositions prepared in Example 1 and Comparative Example 1 was measured, and the results are shown in Fig. 15.

[0298] Adhesion strength was measured using a bio-indenter from Anton Paar. A ruby ​​ball with a diameter of 500 μm was used as the tip, and the tip loading speed was measured at 6 mN / min. When the measurement sample is pressurized with a force of 1 mN using the tip and maintained for about 1 minute, then the pressure is reduced, the adhesion strength of the sample can be measured by measuring the force generated by the adhesiveness of the sample (the change in force applied to the tip as the sample attached to the tip detaches from the tip).

[0299] FIG. 15 is a graph measuring the adhesive strength of an adhesive organic film composition according to one embodiment of the present invention.

[0300] Specifically, FIG. 15 is a graph showing the adhesive strength of Example 1 and Comparative Example 1 measured over time.

[0301] According to the results shown in FIG. 15, it can be seen that the adhesive strength of Comparative Example 1 is at most 0.54 mN and decreased to 0.41 mN after 120 hours. On the other hand, it can be seen that the adhesive strength of Example 1 is at most 3.26 mN and maintained a high adhesive strength of 2.29 mN even after 120 hours. This means that the adhesiveness of Example 1 is higher than that of Comparative Example 1. When the adhesive organic film composition of Example 1, which can maintain high adhesiveness, is used to fix a light-emitting element (LE) to a display panel (100) of a display device, the fixation of the light-emitting element (LE) can be improved.

[0302] The adhesive strength of the adhesive organic film composition of the present invention and the organic film using the adhesive organic film composition may be 2.22 mN or more.

[0303] 3. Modulus of adhesive organic film composition

[0304] The modulus of the adhesive organic film compositions prepared in Example 1 and Comparative Example 1 was measured, and the results are shown in Fig. 16.

[0305] The modulus was measured using a nano indenter from Anton Paar. A Berkovich tip was used as the tip, and the tip loading speed was measured at 0.5 mN / min. The modulus can be measured by analyzing the load-displacement curve obtained during the process of applying a force of 0.05 mN to the sample surface with the indenter tip for 60 seconds and then removing it. It can be observed that the surface hardening rate increases as the modulus increases.

[0306] FIG. 16 is a graph showing the modulus of an adhesive organic film composition according to one embodiment of the present invention.

[0307] Specifically, FIG. 16 is a graph showing the modulus of Example 1 and Comparative Example 1 measured over time.

[0308] According to the results shown in FIG. 16, it can be seen that the modulus of Comparative Example 1 increases from 2.60 GPa to 2.86 GPa over time. On the other hand, it can be seen that the modulus of Example 1 maintains 0.92 GPa from 1.12 GPa. This means that the surface hardening rate of Example 1 is lower than that of Comparative Example 1. When fixing a light-emitting element (LE) to a display panel (100) of a display device using the adhesive organic film composition of Comparative Example 1, the bonding rate is reduced due to the high surface hardening rate, which may result in a reduced fixation rate of the light-emitting element (LE). Conversely, when using the adhesive organic film composition of Example 1, which has a low surface hardening rate, to fix a light-emitting element (LE) to a display panel (100) of a display device, the fixation of the light-emitting element (LE) can be improved. Furthermore, since the fluidity of the adhesive organic film composition of Example 1 is greater than that of the adhesive organic film composition of Comparative Example 1

[0309] The modulus of the adhesive organic film composition of the present invention and the organic film using the adhesive organic film composition may be 1.5 GPa or less.

[0310] 4. Bonding rate of adhesive organic film composition

[0311] The bonding rate of the adhesive organic film compositions prepared in Example 1 and Comparative Example 1 was measured according to temperature, and the results are shown in Fig. 17.

[0312] FIG. 17 is a graph showing the bonding rate according to temperature of an adhesive organic film composition according to one embodiment of the present invention.

[0313] According to the results shown in Fig. 17, Comparative Example 1 has a bonding rate of 99.986% at a temperature of 60°C. Example 1 has a bonding rate of 99.999% at 50°C or higher.

[0314] In particular, Example 1 achieves a bonding rate of 99.997% at a temperature of 40°C. This means that a higher bonding rate is achieved even at a lower temperature than Comparative Example 1. Since Example 1 can achieve a higher bonding rate than Comparative Example 1 even when the process is performed at a low temperature, it is suitable for low-temperature processes.

[0315] When the adhesive organic film composition of Example 1 is used to fix a light-emitting element (LE) to a display panel (100) of a display device, the fixability of the light-emitting element (LE) can be improved with a high bonding rate even when the process is performed at a low temperature of 40°C.

[0316] The bonding rate of the adhesive organic film composition of the present invention and the organic film using the adhesive organic film composition may be 99.99% or higher at a temperature of 40°C or higher.

[0317] FIG. 18 is an example drawing showing a smart watch including a display device according to one embodiment. Referring to FIG. 18, the display device (10_1) according to one embodiment can be applied to a smart watch (1000_1), which is one of the smart devices.

[0318] FIGS. 19 and FIGS. 20 are exemplary drawings showing a virtual reality device including a display device according to one embodiment.

[0319] Referring to FIGS. 19 and 20, a head-mounted display device (1000_2) according to one embodiment includes a first display device (10_2), a second display device (10_3), a display device storage unit (1100), a storage unit cover (1200), a first eyepiece (1210), a second eyepiece (1220), a head-mounted band (1300), a middle frame (1400), a first optical member (1510), a second optical member (1520), and a control circuit board (1600).

[0320] The first display device (10_2) provides an image to the user's left eye, and the second display device (10_3) provides an image to the user's right eye. Since each of the first display device (10_2) and the second display device (10_3) is substantially the same as the display device (10) described in conjunction with FIG. 1 and FIG. 2, the description of the first display device (10_2) and the second display device (10_3) is omitted.

[0321] The first optical member (1510) may be positioned between the first display device (10_2) and the first eyepiece (1210). The second optical member (1520) may be positioned between the second display device (10_3) and the second eyepiece (1220). Each of the first optical member (1510) and the second optical member (1520) may include at least one convex lens.

[0322] The middle frame (1400) is positioned between the first display device (10_2) and the control circuit board (1600), and may be positioned between the second display device (10_3) and the control circuit board (1600). The middle frame (1400) serves to support and fix the first display device (10_2), the second display device (10_3), and the control circuit board (1600).

[0323] The control circuit board (1600) may be placed between the middle frame (1400) and the display device housing (1100). The control circuit board (1600) may be connected to the first display device (10_2) and the second display device (10_3) through a connector. The control circuit board (1600) may convert an image source input from the outside into digital video data (DATA) and transmit the digital video data (DATA) to the first display device (10_2) and the second display device (10_3) through the connector.

[0324] The control circuit board (1600) can transmit digital video data (DATA) corresponding to a left-eye image optimized for the user's left eye to the first display device (10_2) and digital video data (DATA) corresponding to a right-eye image optimized for the user's right eye to the second display device (10_3). Alternatively, the control circuit board (1600) can transmit the same digital video data (DATA) to the first display device (10_2) and the second display device (10_3).

[0325] The display device housing (1100) serves to house the first display device (10_2), the second display device (10_3), the middle frame (1400), the first optical member (1510), the second optical member (1520), and the control circuit board (1600). The housing cover (1200) is positioned to cover an open side of the display device housing (1100). The housing cover (1200) may include a first eyepiece (1210) in which the user's left eye is positioned and a second eyepiece (1220) in which the user's right eye is positioned. Although FIGS. 18 and 19 illustrate the first eyepiece (1210) and the second eyepiece (1220) being positioned separately, the embodiments of this specification are not limited thereto. The first eyepiece (1210) and the second eyepiece (1220) may be combined into one.

[0326] The first eyepiece (1210) is aligned with the first display device (10_2) and the first optical member (1510), and the second eyepiece (1220) can be aligned with the second display device (10_3) and the second optical member (1520). Accordingly, the user can view an image of the first display device (10_2) magnified into a virtual image by the first optical member (1510) through the first eyepiece (1210), and can view an image of the second display device (10_3) magnified into a virtual image by the second optical member (1520) through the second eyepiece (1220).

[0327] The head mounting band (1300) serves to secure the display device storage unit (1100) to the user's head so that the first eyepiece (1210) and the second eyepiece (1220) of the storage unit cover (1200) can be maintained in a state where they are positioned on the user's left and right eyes, respectively. When the display device storage unit (1200) is implemented as a lightweight and compact unit, the head-mounted display device (1000) may be equipped with an eyeglass frame as shown in FIG. 20 instead of the head mounting band (1300).

[0328] In addition, the head-mounted display device (1000) may further be equipped with a battery for supplying power, an external memory slot for storing external memory, an external connection port for receiving video sources, and a wireless communication module. The external connection port may be a USB (universe serial bus) terminal, a display port, or an HDMI (high-definition multimedia interface) terminal, and the wireless communication module may be a 5G communication module, a 4G communication module, a Wi-Fi module, or a Bluetooth module.

[0329] FIG. 21 is an exemplary drawing showing a virtual reality device including a display device according to another embodiment. FIG. 21 shows a virtual reality device (1000_3) to which a display device (10_4) according to one embodiment is applied.

[0330] Referring to FIG. 21, a virtual reality device (1000_3) according to one embodiment may be a device in the form of glasses. A virtual reality device (1000_3) according to one embodiment may have a display device (10_4), a left eye lens (10a), a right eye lens (10b), a support frame (20), eyeglass frame legs (30a, 30b), a reflective member (40), and a display device housing (50).

[0331] FIG. 21 illustrates a virtual reality device (1000_3) that is an eyeglass-type display device including eyeglass frame temples (30a, 30b). That is, the virtual reality device (1000_3) according to one embodiment is not limited to that shown in FIG. 21 and can be applied in various forms in various other electronic devices.

[0332] The display device housing (50) may include a display device (10_4) and a reflective member (40). An image displayed on the display device (10_4) may be reflected from the reflective member (40) and provided to the user's right eye through the right eye lens (10b). As a result, the user can view the virtual reality image displayed on the display device (10_4) through their right eye.

[0333] FIG. 21 illustrates that the display device housing (50) is positioned at the right end of the support frame (20), but the embodiments of this specification are not limited thereto. For example, the display device housing (50) may be positioned at the left end of the support frame (20), in which case the image displayed on the display device (10_4) may be reflected from the reflective member (40) and provided to the user's left eye through the left eye lens (10a). As a result, the user can view the virtual reality image displayed on the display device (10_4) through the left eye. Alternatively, the display device housing (50) may be positioned at both the left end and the right end of the support frame (20), in which case the user can view the virtual reality image displayed on the display device (10_4) through both the left eye and the right eye.

[0334] FIG. 22 is an exemplary drawing showing an automobile instrument panel and a center fascia including display devices according to one embodiment. FIG. 22 shows an automobile with display devices (10_a, 10_b, 10_c, 10_d, 10_e) according to one embodiment applied.

[0335] Referring to FIG. 22, display devices (10_a, 10_b, 10_c) according to one embodiment may be applied to an instrument panel of a vehicle, to a center fascia of a vehicle, or to a Center Information Display (CID) placed on the dashboard of a vehicle. Additionally, display devices (10_d, 10_e) according to one embodiment may be applied to a room mirror display that replaces a side mirror of a vehicle.

[0336] FIG. 23 is an example drawing showing a transparent display device including a display device according to one embodiment.

[0337] Referring to FIG. 23, a display device (10_5) according to one embodiment can be applied to a transparent display device. The transparent display device can display an image (IM) and transmit light simultaneously. Therefore, a user located in front of the transparent display device can not only view the image (IM) displayed on the display device (10_5) but also see an object (RS) or background located on the back of the transparent display device. When the display device (10_5) is applied to a transparent display device, the substrate of the display device (10_5) may include a light-transmitting portion capable of transmitting light or be formed of a material capable of transmitting light.

[0338] Although embodiments of the present invention have been described above with reference to the attached drawings, those skilled in the art will understand that the present invention may be implemented in other specific forms without changing the technical concept or essential features thereof. Therefore, the embodiments described above should be understood as illustrative in all respects and not restrictive.

Claims

1. An adhesive organic film composition comprising: a monomer represented by the following chemical formula 1; a reactive unsaturated compound represented by the following chemical formula 2; a photoinitiator; and a solvent, wherein With respect to 100 parts by weight of the above adhesive organic film composition, 25 to 50 parts by weight of a monomer represented by the above chemical formula 1; 5 to 10 parts by weight of the above reactive unsaturated compound; 0.25 to 5 parts by weight of the above photoinitiator; and An adhesive organic film composition comprising 40 to 70 parts by weight of the above solvent: [Chemical Formula 1] [Chemical Formula 2] In the above chemical formula 1, n and m are integers.

2. In Paragraph 1, R in the following mathematical formula 1 C=C / C=O Adhesive organic film composition having a g of 0.28 or higher: [Mathematical Formula 1] In the above mathematical formula 1, The above I C=C is the C=C bond peak intensity in the infrared spectroscopic spectrum, and The above I C=O is the C=O bond peak intensity in the infrared spectroscopic spectrum.

3. In Paragraph 1, An adhesive organic film composition having an adhesive strength of 2.2 mN or more.

4. In Paragraph 1, An adhesive organic film composition having a modulus of 1.5 GPa or less.

5. In Paragraph 1, An adhesive organic film composition having a bonding rate of 99.99% or higher at a temperature of 40℃ or higher.

6. Substrate; An organic film disposed on the above substrate; and A light-emitting element disposed on the above organic film, and The above organic film is, A monomer represented by the following chemical formula 1; a reactive unsaturated compound; a photoinitiator; and a solvent, comprising With respect to 100 parts by weight of the above organic film, 25 to 50 parts by weight of a monomer represented by the above chemical formula 1; 5 to 10 parts by weight of the above reactive unsaturated compound; 0.25 to 5 parts by weight of the above photoinitiator and A display device comprising 40 to 70 parts by weight of the above solvent: [Chemical Formula 1] In the above chemical formula 1, n and m are integers.

7. In Paragraph 6, A display device comprising the above reactive unsaturated compound, wherein the compound is represented by the following chemical formula 2: [Chemical Formula 2] .

8. In Paragraph 6, The above organic film is R of the following mathematical formula 1. C=C / C=O Display device with a value of 0.28 or higher: [Mathematical Formula 1] In the above mathematical formula 1, The above I C=C is the C=C bond peak intensity in the infrared spectroscopic spectrum, and The above I C=O is the C=O bond peak intensity in the infrared spectroscopic spectrum.

9. In Paragraph 6, A display device having an adhesive strength of 2.22 mN or more of the above organic film.

10. In Paragraph 6, A display device having a modulus of 1.5 GPa or less of the organic film.

11. In Paragraph 6, A display device having a bonding rate of 99.99% or higher of the organic film at a temperature of 40°C or higher.

12. In Paragraph 6, The above photoinitiator is a display device comprising an oxime-based photoinitiator.

13. In Paragraph 6, The above organic film is a display device further comprising an ionic initiator.

14. In Paragraph 6, The above light-emitting element is, Semiconductor stack; A protective film disposed on the side of the semiconductor stack; and It includes a contact electrode disposed on the above protective film, and A display device in which a portion of the side of the semiconductor stack is exposed and not covered by the contact electrode, and the contact electrode is positioned apart from the upper surface of the semiconductor stack.

15. In Paragraph 6, The above light-emitting element is, Semiconductor stack; A conductive layer disposed between the above organic film and the above semiconductor stack; A protective film disposed on the sides of the conductive layer and the sides of the semiconductor stack; A first contact electrode disposed on the protective film and connected to a conductive layer exposed and not covered by the protective film; and It includes a second contact electrode disposed on the protective film and disposed in a hole penetrating the conductive layer and a part of the semiconductor stack, and A display device wherein the first contact electrode and the second contact electrode are each disposed apart from the upper surface of the semiconductor stack.

16. A display module that provides an image; and A processor that transmits an image data signal to the above-mentioned display module is provided, and The above display module is, Substrate; An organic film disposed on the above substrate; and A light-emitting element disposed on the above organic film, and The above organic film is, A monomer represented by the following chemical formula 1; a reactive unsaturated compound; a photoinitiator; and a solvent, comprising With respect to 100 parts by weight of the above organic film, 25 to 50 parts by weight of a monomer represented by the above chemical formula 1; 5 to 10 parts by weight of the above reactive unsaturated compound; 0.25 to 5 parts by weight of the above photoinitiator and An electronic device comprising 40 to 70 parts by weight of the above solvent: [Chemical Formula 1] In the above chemical formula 1, n and m are integers.

17. In Paragraph 16, An electronic device comprising the above reactive unsaturated compound, wherein the reactive unsaturated compound comprises a compound represented by the following chemical formula 2: [Chemical Formula 2] .

18. In Paragraph 16, The above organic film is R of the following mathematical formula 1. C=C / C=O Electronic device with a value of 0.28 or higher: [Mathematical Formula 1] In the above mathematical formula 1, The above I C=C is the C=C bond peak intensity in the infrared spectroscopic spectrum, and The above I C=O is the C=O bond peak intensity in the infrared spectroscopic spectrum.

19. In Paragraph 16, An electronic device having an adhesive strength of 2.22 mN or more of the above organic film.

20. In Paragraph 16, An electronic device having a modulus of 1.5 GPa or less of the organic film.

Images