VLSI vs NVM: Optimal Data Storage Solution for Edge Devices
MAR 7, 20269 MIN READ
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VLSI and NVM Integration Background and Objectives
The convergence of Very Large Scale Integration (VLSI) and Non-Volatile Memory (NVM) technologies represents a critical evolution in addressing the exponential growth of data processing demands at the network edge. As computing paradigms shift from centralized cloud architectures to distributed edge computing, the need for optimized data storage solutions has become paramount. Edge devices, ranging from IoT sensors to autonomous vehicles, require storage systems that can deliver high performance while operating under stringent power, space, and thermal constraints.
VLSI technology has traditionally focused on maximizing computational density through advanced semiconductor manufacturing processes, enabling the integration of billions of transistors on a single chip. However, the conventional separation between processing and storage components has created bottlenecks in data-intensive applications. The von Neumann architecture's inherent limitations become particularly pronounced in edge environments where power efficiency and real-time processing capabilities are critical.
NVM technologies, including NAND flash, 3D XPoint, MRAM, and emerging storage class memories, offer unique advantages for edge applications through their ability to retain data without continuous power supply. These technologies provide varying trade-offs between performance, endurance, power consumption, and cost, making them suitable for different edge computing scenarios. The integration challenge lies in optimizing these characteristics to meet specific application requirements.
The primary objective of VLSI-NVM integration is to create unified storage-processing architectures that minimize data movement overhead while maximizing computational efficiency. This integration aims to address the memory wall problem by bringing storage closer to processing elements, reducing latency and power consumption. Key technical goals include developing near-data computing capabilities, implementing in-memory processing functions, and creating adaptive storage hierarchies that can dynamically optimize for different workload patterns.
Edge device constraints further complicate the integration challenge, as solutions must operate within limited power budgets, compact form factors, and often harsh environmental conditions. The integration strategy must consider thermal management, electromagnetic interference, and manufacturing cost constraints while delivering the performance characteristics required for emerging applications such as real-time AI inference, autonomous systems, and industrial IoT deployments.
VLSI technology has traditionally focused on maximizing computational density through advanced semiconductor manufacturing processes, enabling the integration of billions of transistors on a single chip. However, the conventional separation between processing and storage components has created bottlenecks in data-intensive applications. The von Neumann architecture's inherent limitations become particularly pronounced in edge environments where power efficiency and real-time processing capabilities are critical.
NVM technologies, including NAND flash, 3D XPoint, MRAM, and emerging storage class memories, offer unique advantages for edge applications through their ability to retain data without continuous power supply. These technologies provide varying trade-offs between performance, endurance, power consumption, and cost, making them suitable for different edge computing scenarios. The integration challenge lies in optimizing these characteristics to meet specific application requirements.
The primary objective of VLSI-NVM integration is to create unified storage-processing architectures that minimize data movement overhead while maximizing computational efficiency. This integration aims to address the memory wall problem by bringing storage closer to processing elements, reducing latency and power consumption. Key technical goals include developing near-data computing capabilities, implementing in-memory processing functions, and creating adaptive storage hierarchies that can dynamically optimize for different workload patterns.
Edge device constraints further complicate the integration challenge, as solutions must operate within limited power budgets, compact form factors, and often harsh environmental conditions. The integration strategy must consider thermal management, electromagnetic interference, and manufacturing cost constraints while delivering the performance characteristics required for emerging applications such as real-time AI inference, autonomous systems, and industrial IoT deployments.
Edge Device Data Storage Market Demand Analysis
The edge device data storage market is experiencing unprecedented growth driven by the proliferation of Internet of Things applications, autonomous vehicles, industrial automation systems, and smart city infrastructure. Edge computing architectures require local data processing capabilities to minimize latency, reduce bandwidth consumption, and ensure real-time decision-making. This fundamental shift from centralized cloud processing to distributed edge computing creates substantial demand for efficient, reliable, and cost-effective storage solutions at the network periphery.
Market drivers include the exponential increase in data generation from sensors, cameras, and connected devices deployed across various industries. Manufacturing facilities implementing Industry 4.0 initiatives require edge storage for real-time quality control, predictive maintenance, and process optimization. Healthcare applications demand secure local storage for patient monitoring devices and diagnostic equipment. Retail environments utilize edge storage for inventory management, customer analytics, and point-of-sale systems.
The automotive sector represents a particularly significant growth area, with connected and autonomous vehicles requiring substantial local storage capacity for sensor fusion, mapping data, and safety-critical applications. These applications demand storage solutions that can operate reliably under extreme temperature variations, vibration, and electromagnetic interference while maintaining high performance and low power consumption.
Enterprise adoption of edge computing continues accelerating as organizations seek to reduce cloud dependency, improve data sovereignty, and enhance application performance. Remote locations with limited connectivity particularly benefit from robust local storage capabilities that ensure business continuity during network disruptions.
Current market trends indicate strong preference for storage solutions offering high density, low power consumption, and extended operational temperature ranges. Applications increasingly require storage systems capable of handling mixed workloads, including both high-frequency transactional data and large-scale analytics processing. The market also demands solutions that balance performance requirements with cost constraints, particularly for large-scale deployments across distributed edge infrastructure.
Emerging applications in artificial intelligence and machine learning at the edge further intensify storage requirements, as these systems must store training models, inference data, and continuous learning updates locally to maintain optimal performance and privacy compliance.
Market drivers include the exponential increase in data generation from sensors, cameras, and connected devices deployed across various industries. Manufacturing facilities implementing Industry 4.0 initiatives require edge storage for real-time quality control, predictive maintenance, and process optimization. Healthcare applications demand secure local storage for patient monitoring devices and diagnostic equipment. Retail environments utilize edge storage for inventory management, customer analytics, and point-of-sale systems.
The automotive sector represents a particularly significant growth area, with connected and autonomous vehicles requiring substantial local storage capacity for sensor fusion, mapping data, and safety-critical applications. These applications demand storage solutions that can operate reliably under extreme temperature variations, vibration, and electromagnetic interference while maintaining high performance and low power consumption.
Enterprise adoption of edge computing continues accelerating as organizations seek to reduce cloud dependency, improve data sovereignty, and enhance application performance. Remote locations with limited connectivity particularly benefit from robust local storage capabilities that ensure business continuity during network disruptions.
Current market trends indicate strong preference for storage solutions offering high density, low power consumption, and extended operational temperature ranges. Applications increasingly require storage systems capable of handling mixed workloads, including both high-frequency transactional data and large-scale analytics processing. The market also demands solutions that balance performance requirements with cost constraints, particularly for large-scale deployments across distributed edge infrastructure.
Emerging applications in artificial intelligence and machine learning at the edge further intensify storage requirements, as these systems must store training models, inference data, and continuous learning updates locally to maintain optimal performance and privacy compliance.
Current VLSI-NVM Integration Challenges and Status
The integration of VLSI and NVM technologies for edge device applications faces significant technical and manufacturing challenges that currently limit widespread deployment. Traditional VLSI architectures were primarily designed for volatile memory systems, creating fundamental compatibility issues when incorporating non-volatile memory elements at the circuit level.
Process integration represents one of the most critical challenges, as conventional CMOS fabrication processes require substantial modifications to accommodate NVM cells. The thermal budget constraints during manufacturing often conflict with the annealing requirements for phase-change materials or resistive switching layers used in emerging NVM technologies. This incompatibility leads to compromised device performance and reduced manufacturing yields.
Power management complexity emerges as another significant hurdle, particularly for edge devices operating under strict energy constraints. VLSI-NVM hybrid systems exhibit asymmetric read-write power consumption patterns, with write operations typically requiring 10-100 times more energy than reads. Current power management units struggle to efficiently handle these dynamic power requirements while maintaining system stability.
Reliability and endurance issues plague current integration attempts, especially in harsh edge environments. Temperature variations, electromagnetic interference, and mechanical stress significantly impact NVM cell stability when integrated within VLSI substrates. Write endurance limitations of many NVM technologies, ranging from 10^3 to 10^6 cycles, fall short of requirements for frequently updated edge applications.
Design tool limitations further complicate the integration process. Existing Electronic Design Automation software lacks comprehensive models for VLSI-NVM hybrid circuits, forcing engineers to rely on simplified approximations that often fail to capture complex interactions between volatile and non-volatile components. This results in suboptimal designs and extended development cycles.
Current industry status shows mixed progress across different integration approaches. Embedded NVM solutions have achieved moderate success in microcontroller applications, while advanced 3D integration techniques remain largely experimental. Major semiconductor manufacturers report integration densities below 50% of theoretical maximums due to these persistent challenges.
Process integration represents one of the most critical challenges, as conventional CMOS fabrication processes require substantial modifications to accommodate NVM cells. The thermal budget constraints during manufacturing often conflict with the annealing requirements for phase-change materials or resistive switching layers used in emerging NVM technologies. This incompatibility leads to compromised device performance and reduced manufacturing yields.
Power management complexity emerges as another significant hurdle, particularly for edge devices operating under strict energy constraints. VLSI-NVM hybrid systems exhibit asymmetric read-write power consumption patterns, with write operations typically requiring 10-100 times more energy than reads. Current power management units struggle to efficiently handle these dynamic power requirements while maintaining system stability.
Reliability and endurance issues plague current integration attempts, especially in harsh edge environments. Temperature variations, electromagnetic interference, and mechanical stress significantly impact NVM cell stability when integrated within VLSI substrates. Write endurance limitations of many NVM technologies, ranging from 10^3 to 10^6 cycles, fall short of requirements for frequently updated edge applications.
Design tool limitations further complicate the integration process. Existing Electronic Design Automation software lacks comprehensive models for VLSI-NVM hybrid circuits, forcing engineers to rely on simplified approximations that often fail to capture complex interactions between volatile and non-volatile components. This results in suboptimal designs and extended development cycles.
Current industry status shows mixed progress across different integration approaches. Embedded NVM solutions have achieved moderate success in microcontroller applications, while advanced 3D integration techniques remain largely experimental. Major semiconductor manufacturers report integration densities below 50% of theoretical maximums due to these persistent challenges.
Current VLSI-NVM Hybrid Storage Architectures
01 Memory cell architecture optimization for NVM
Optimization techniques focus on improving the physical structure and design of non-volatile memory cells to enhance storage density and performance. This includes innovations in cell transistor configurations, multi-level cell architectures, and three-dimensional stacking arrangements. Advanced cell designs enable higher bit density per unit area while maintaining data integrity and reducing power consumption. These architectural improvements are fundamental to achieving better storage capacity in VLSI implementations.- Memory cell architecture optimization for NVM: Optimization techniques focus on improving the physical structure and design of non-volatile memory cells to enhance storage density and performance. This includes innovations in cell transistor configurations, multi-level cell architectures, and three-dimensional stacking arrangements. Advanced cell designs enable higher bit density per unit area while maintaining data integrity and reducing power consumption. These architectural improvements are fundamental to achieving better storage capacity in VLSI implementations.
- Data compression and encoding schemes: Various data compression algorithms and encoding methods are employed to optimize storage utilization in non-volatile memory systems. These techniques include adaptive compression based on data patterns, error correction coding integration, and efficient metadata management. By reducing the physical storage requirements for data while maintaining accessibility and reliability, these methods significantly improve overall storage efficiency. The approaches are particularly effective for reducing write amplification and extending memory lifespan.
- Wear leveling and endurance management: Techniques for distributing write and erase cycles evenly across memory blocks to extend the operational lifetime of non-volatile memory devices. These methods include dynamic block allocation, hot and cold data separation, and predictive algorithms for identifying frequently accessed regions. Advanced wear leveling strategies monitor usage patterns and proactively redistribute data to prevent premature failure of specific memory regions. This optimization is critical for maintaining long-term reliability in storage systems.
- Power management and energy optimization: Power-efficient design strategies for reducing energy consumption in non-volatile memory operations during read, write, and standby modes. These include voltage scaling techniques, selective activation of memory banks, and optimized charge pump circuits. Advanced power management incorporates dynamic voltage and frequency scaling based on workload characteristics. Energy optimization is essential for mobile and embedded applications where battery life is critical.
- Controller algorithms and garbage collection: Sophisticated controller-level algorithms that manage data placement, garbage collection, and block reclamation in non-volatile memory systems. These algorithms optimize the timing and execution of background operations to minimize performance impact on foreground tasks. Advanced scheduling techniques balance between maintaining free space availability and reducing write amplification. Efficient garbage collection strategies are crucial for sustaining high performance over the device lifetime.
02 Data compression and encoding schemes
Various data compression algorithms and encoding methods are employed to optimize storage utilization in non-volatile memory systems. These techniques include adaptive compression based on data patterns, error correction coding integration, and efficient metadata management. By reducing the actual data footprint before storage, these methods effectively increase the usable capacity of memory devices. The approaches also consider trade-offs between compression ratios, processing overhead, and access latency.Expand Specific Solutions03 Wear leveling and endurance management
Techniques for extending the lifespan and reliability of non-volatile memory through intelligent data placement and block management strategies. These methods distribute write operations evenly across memory cells to prevent premature wear of specific locations. Advanced algorithms track usage patterns and dynamically relocate data to optimize endurance. Such approaches are critical for maintaining long-term data integrity and maximizing the operational lifetime of storage devices.Expand Specific Solutions04 Power optimization and energy-efficient operations
Power management strategies designed to reduce energy consumption during read, write, and idle operations in non-volatile memory systems. These include voltage scaling techniques, selective activation of memory banks, and optimized refresh cycles. Energy-efficient circuit designs and operational modes help minimize power draw while maintaining performance requirements. Such optimizations are particularly important for battery-powered and mobile applications where energy efficiency is critical.Expand Specific Solutions05 Controller algorithms and access optimization
Advanced controller designs and algorithms that optimize data access patterns, caching strategies, and command scheduling for non-volatile memory systems. These include predictive prefetching, intelligent buffering, and parallel access coordination to improve throughput and reduce latency. The controllers implement sophisticated mapping schemes and garbage collection algorithms to maintain optimal performance. Such optimizations bridge the gap between host system requirements and physical memory characteristics.Expand Specific Solutions
Major Players in VLSI and NVM Storage Solutions
The VLSI vs NVM data storage solution landscape for edge devices represents a rapidly evolving market in the growth phase, driven by increasing IoT deployment and edge computing demands. The market exhibits significant scale with established players like Samsung Electronics, Intel, and Western Digital leading traditional storage solutions, while companies such as Pure Storage and NetApp pioneer advanced storage architectures. Technology maturity varies considerably across segments - VLSI-based solutions demonstrate high maturity through companies like Qualcomm and Marvell Asia, whereas emerging NVM technologies show mixed maturity levels. Key differentiators include SanDisk's flash expertise, IBM's enterprise integration capabilities, and specialized players like KIOXIA advancing memory innovation. The competitive dynamics favor hybrid approaches combining both technologies to optimize performance, power efficiency, and cost-effectiveness for diverse edge computing applications.
SanDisk Technologies LLC
Technical Solution: SanDisk specializes in ruggedized NVM solutions designed specifically for harsh edge environments, featuring industrial-grade flash memory with operating temperature ranges from -40°C to +85°C. Their iNAND embedded flash drives integrate advanced controller technology with proprietary firmware optimizations, delivering consistent performance across varying workloads typical in edge computing scenarios. The company's VLSI implementations include hardware-based encryption engines and secure boot capabilities, ensuring data integrity in distributed edge networks. SanDisk's storage solutions feature adaptive block management and intelligent wear leveling algorithms that extend device lifespan to over 10 years in continuous operation. Their compact form factors, including microSD and embedded solutions, enable deployment in space-constrained edge devices while maintaining enterprise-grade reliability and data retention capabilities.
Strengths: Proven reliability in harsh environments, compact form factors, strong security features. Weaknesses: Limited high-performance options, slower innovation cycle compared to memory-focused competitors.
Samsung Electronics Co., Ltd.
Technical Solution: Samsung develops advanced VLSI-based storage solutions including eUFS (embedded Universal Flash Storage) and high-density NAND flash memory specifically optimized for edge devices. Their V-NAND technology achieves up to 1Tb capacity in a single chip while maintaining low power consumption below 200mW during active operations. The company's storage controllers integrate advanced wear leveling algorithms and error correction codes to enhance reliability in edge computing environments. Samsung's NVM solutions feature adaptive voltage scaling and dynamic power management, enabling extended battery life in IoT devices while providing sequential read speeds exceeding 2,100MB/s for rapid data access in real-time applications.
Strengths: Industry-leading manufacturing scale, proven reliability in mobile devices, excellent power efficiency. Weaknesses: Higher cost compared to traditional storage solutions, complex integration requirements for smaller edge devices.
Core Patents in VLSI-NVM Integration Technologies
Data storage device enabling latches of non-volatile memory dies for use as externally-accessible volatile memory
PatentActiveUS20220171558A1
Innovation
- The implementation of a data storage device with a memory die containing non-volatile memory storage elements and a latch, where a controller dynamically manages the latches to be used as volatile memory by notifying a processing device of their availability, storing data in response to write commands, and retrieving data in response to read commands, thereby optimizing RAM usage.
Data storage device, and non-volatile memory control method
PatentActiveUS20210208800A1
Innovation
- A hierarchical storage architecture is implemented using a controller to allocate non-volatile memory into namespace sets, with different tiers providing varying levels of input and output isolation, allowing specific applications to access designated storage units while preventing interference between them, utilizing logical unit numbers and chip-enable signals for parallel access.
Power Efficiency Standards for Edge Storage Systems
Power efficiency standards for edge storage systems have become increasingly critical as the demand for autonomous, battery-powered devices continues to expand across IoT, automotive, and mobile computing applications. Current industry standards primarily focus on establishing baseline power consumption metrics, thermal management requirements, and energy harvesting compatibility protocols that directly impact the selection between VLSI-based and NVM-based storage architectures.
The IEEE 1621 standard provides fundamental guidelines for power measurement methodologies in storage devices, while the JEDEC JESD79 series specifically addresses low-power memory interfaces including LPDDR and emerging NVM protocols. These standards establish maximum standby power thresholds typically ranging from 10-50 milliwatts for edge applications, with active power consumption limits varying between 100-500 milliwatts depending on performance requirements and thermal constraints.
Energy efficiency metrics defined by these standards include power-per-bit ratios, retention power requirements, and dynamic power scaling capabilities. VLSI flash storage systems typically demonstrate superior performance in burst operations but face challenges meeting stringent standby power requirements due to charge pump overhead and refresh mechanisms. Conversely, NVM technologies like MRAM and ReRAM excel in ultra-low standby scenarios but may struggle with write power efficiency standards during intensive operations.
Emerging standards such as the Open Compute Project's edge computing specifications are driving convergence toward adaptive power management frameworks. These frameworks mandate real-time power state transitions, predictive thermal throttling, and intelligent workload distribution between storage tiers. The standards increasingly emphasize holistic system-level efficiency rather than component-level optimization alone.
Compliance verification protocols require comprehensive testing across temperature ranges from -40°C to 85°C, with power measurements conducted under various operational scenarios including idle states, sequential access patterns, and random workload distributions. Future standard revisions are expected to incorporate machine learning-based power prediction models and dynamic voltage scaling requirements specifically tailored for heterogeneous edge storage architectures.
The IEEE 1621 standard provides fundamental guidelines for power measurement methodologies in storage devices, while the JEDEC JESD79 series specifically addresses low-power memory interfaces including LPDDR and emerging NVM protocols. These standards establish maximum standby power thresholds typically ranging from 10-50 milliwatts for edge applications, with active power consumption limits varying between 100-500 milliwatts depending on performance requirements and thermal constraints.
Energy efficiency metrics defined by these standards include power-per-bit ratios, retention power requirements, and dynamic power scaling capabilities. VLSI flash storage systems typically demonstrate superior performance in burst operations but face challenges meeting stringent standby power requirements due to charge pump overhead and refresh mechanisms. Conversely, NVM technologies like MRAM and ReRAM excel in ultra-low standby scenarios but may struggle with write power efficiency standards during intensive operations.
Emerging standards such as the Open Compute Project's edge computing specifications are driving convergence toward adaptive power management frameworks. These frameworks mandate real-time power state transitions, predictive thermal throttling, and intelligent workload distribution between storage tiers. The standards increasingly emphasize holistic system-level efficiency rather than component-level optimization alone.
Compliance verification protocols require comprehensive testing across temperature ranges from -40°C to 85°C, with power measurements conducted under various operational scenarios including idle states, sequential access patterns, and random workload distributions. Future standard revisions are expected to incorporate machine learning-based power prediction models and dynamic voltage scaling requirements specifically tailored for heterogeneous edge storage architectures.
Security Considerations in Edge Data Storage
Edge data storage systems face multifaceted security challenges that require comprehensive protection strategies across hardware, software, and network layers. The distributed nature of edge computing environments creates unique vulnerabilities that differ significantly from traditional centralized data storage architectures.
Hardware-level security represents the foundational layer of protection for edge storage devices. VLSI-based storage solutions typically incorporate hardware security modules (HSMs) and trusted platform modules (TPMs) that provide cryptographic key management and secure boot capabilities. These components establish a root of trust that validates system integrity during initialization. Non-volatile memory technologies, particularly emerging solutions like resistive RAM and phase-change memory, offer inherent physical security advantages through their ability to implement physically unclonable functions (PUFs) that create unique device fingerprints.
Data encryption remains paramount for protecting stored information in edge environments. Advanced Encryption Standard (AES) implementations with 256-bit keys provide robust protection for data at rest, while elliptic curve cryptography offers efficient key exchange mechanisms suitable for resource-constrained edge devices. The selection between VLSI and NVM storage solutions significantly impacts encryption performance, with VLSI systems typically offering dedicated cryptographic accelerators that reduce computational overhead.
Access control mechanisms must address the dynamic nature of edge computing environments where devices frequently join and leave networks. Role-based access control (RBAC) systems combined with attribute-based access control (ABAC) frameworks provide granular permission management. Multi-factor authentication protocols, including biometric verification and hardware tokens, enhance security while maintaining usability in edge deployment scenarios.
Network security considerations encompass both data transmission and device communication protocols. Transport Layer Security (TLS) 1.3 implementations ensure encrypted communication channels between edge devices and central management systems. Virtual private network (VPN) tunneling and software-defined perimeter (SDP) architectures create secure network segments that isolate edge storage systems from potential external threats.
Physical security measures address the inherent vulnerability of edge devices deployed in uncontrolled environments. Tamper-evident enclosures and intrusion detection sensors provide immediate alerts when unauthorized physical access occurs. Self-destruct mechanisms for sensitive cryptographic keys prevent data compromise in case of device theft or physical compromise.
Regular security updates and patch management present unique challenges in edge environments where devices may operate with limited connectivity. Over-the-air (OTA) update mechanisms with cryptographic signature verification ensure authentic firmware updates while maintaining system security integrity throughout the device lifecycle.
Hardware-level security represents the foundational layer of protection for edge storage devices. VLSI-based storage solutions typically incorporate hardware security modules (HSMs) and trusted platform modules (TPMs) that provide cryptographic key management and secure boot capabilities. These components establish a root of trust that validates system integrity during initialization. Non-volatile memory technologies, particularly emerging solutions like resistive RAM and phase-change memory, offer inherent physical security advantages through their ability to implement physically unclonable functions (PUFs) that create unique device fingerprints.
Data encryption remains paramount for protecting stored information in edge environments. Advanced Encryption Standard (AES) implementations with 256-bit keys provide robust protection for data at rest, while elliptic curve cryptography offers efficient key exchange mechanisms suitable for resource-constrained edge devices. The selection between VLSI and NVM storage solutions significantly impacts encryption performance, with VLSI systems typically offering dedicated cryptographic accelerators that reduce computational overhead.
Access control mechanisms must address the dynamic nature of edge computing environments where devices frequently join and leave networks. Role-based access control (RBAC) systems combined with attribute-based access control (ABAC) frameworks provide granular permission management. Multi-factor authentication protocols, including biometric verification and hardware tokens, enhance security while maintaining usability in edge deployment scenarios.
Network security considerations encompass both data transmission and device communication protocols. Transport Layer Security (TLS) 1.3 implementations ensure encrypted communication channels between edge devices and central management systems. Virtual private network (VPN) tunneling and software-defined perimeter (SDP) architectures create secure network segments that isolate edge storage systems from potential external threats.
Physical security measures address the inherent vulnerability of edge devices deployed in uncontrolled environments. Tamper-evident enclosures and intrusion detection sensors provide immediate alerts when unauthorized physical access occurs. Self-destruct mechanisms for sensitive cryptographic keys prevent data compromise in case of device theft or physical compromise.
Regular security updates and patch management present unique challenges in edge environments where devices may operate with limited connectivity. Over-the-air (OTA) update mechanisms with cryptographic signature verification ensure authentic firmware updates while maintaining system security integrity throughout the device lifecycle.
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