Electric Analogue Stores TRIZ Cases
- Self-Aligned Phase Change Memory Cell Structure
A self-aligned phase change memory array uses damascene processing to define bit and word lines over access devices.
- Data Sampling Circuit Module Using Differential Signal Clock
A data sampling circuit module generates a sensing voltage pair from differential signals to output sampling data streams.
- Vector Operation Circuit Using Programmable Threshold Switching
A vector operation circuit uses semiconductor switching elements with programmable threshold voltages to control current flow through column lines.
- STT-RAM Write Pulse Calibration Using Replica Cell
A replica memory cell measures the maximum pulse width required for data writing in spin transfer torque random access memory.
- Resistive Memory Clamping Unit for Precharge Offset Cancellation
A clamping unit with a transistor and capacitor manages node voltages during precharge cycles in resistive memory devices.
- Compensated Current Sensing Checking Block for Non-Volatile Memory
A compensated current sensing checking block compares voltage levels using an operational amplifier and switched capacitors to verify programming status.
- Varistor-Integrated Resistive RAM for Bipolar Resistor Support
Opposing diode varistors enable bipolar resistor operation in RRAM, overcoming unidirectional current limits.
- Radiation-Tolerant Voltage Reference Circuit Using Flying Capacitor Isolation
Segmenting the precision loop and buffer circuit with a flying capacitor reduces voltage modulation and drift caused by ground bounce.
- Analog CAM Circuit Encoding Arbitrary Range Segments
Analog content addressable memory circuits encode arbitrary range segments using voltage divider configurations to establish precise upper and lower bounds.
- MRAM Diode Array Access Method for STRAM Scaling
Parallel opposing diodes replace transistors in MRAM cells, reducing area overhead and leakage power consumption while enhancing memory density.
- Nonvolatile Analog Memory Cell Stabilization
Current adjusters equalize currents against reference values to prevent drift in analog memory cells.
- Sense Amp Power Noise Reduction in Memory Sensing
Staggered sense amp strobing isolates power draw fluctuations, reducing supply noise and improving read accuracy.
- Ionic Transistor Capacitor Neuromorphic Synapse
An ionic transistor and capacitor series structure modulates conductance levels for neuromorphic synaptic simulation.
- Resistive Memory Reset via Dual Bias Segmentation
A resistive memory cell uses dual bias voltages to reset the switching device while protecting the gate switch from damage.