An inductor-resistor-capacitor gate-source circuit suppresses turn-off surge voltage while limiting switching loss in semiconductor switches.
A negative-capacitance gate stack amplifies channel electric field to cut sub-threshold swing and power dissipation in topological QFETs.
Dual arcuate springs inside the handle enable compact automatic reset for rotary switches while simplifying assembly and avoiding magnetic interference.
A varistor-capacitor branch and switch-resistor path limit DC switching overvoltage and enable low-loss energy discharge.
Embedded conductors in the door seal create capacitive feedback so the cinch assembly can maintain alignment, sealing, and lower NVH.
A relay-controlled parallel capacitor circuit protects EV high-voltage parts from overvoltage and undervoltage to prevent failure and extend service life.
A switchable freewheel and Zener clamping path speeds solenoid de-energization, reducing contactor damage, chip area, and safety risk.
A single passive gate-driver uses shared resistors, diodes, MOVs, and RC snubbers to simplify series IGBT DC breakers and improve reliability.
Voltage feedback and comparator control keep the low-side switch on during dead times to cut body diode losses and deterioration.
A deformable membrane and variable resistance layer turn binary key presses into pressure-sensitive input without adding complex keyboard structure.
Directional input control delays adjacent touch actions after a push operation to prevent accidental execution without canceling intended commands.
Multiple heterojunction 2DEG channels linked by source and drain plugs cut on-resistance while keeping gate control of sub-surface current paths.
di/dt feedback from parasitic inductance lets this active gate driver cut switching loss while suppressing EMI and false turn-on in WBG devices.
Independently biased field plates use depletion transistors with different pinch-off voltages to flatten gate-drain fields and cut leakage current.
A passive discharge circuit keeps the substrate near 0 V in bidirectional switches, improving ZVS behavior without extra gate control.
Electromagnetic lateral motion in a haptic button delivers tactile feedback with minimal displacement while saving space in portable electronics.
Stored target states and low-frequency monitoring let a phase change RF switch correct startup or overvoltage mis-switching without harming RF behavior.
Different intrinsic region thicknesses on one wafer let each RF switch arm be tuned for power, loss, reliability, size, and cost.
Differential capacitance symmetry helps distinguish raindrops from dust or contact events, enabling robust low-cost rain sensing for garden appliances.
Non-contact inductive sensing tracks trigger movement to control motor direction and speed while reducing switch wear and extra components.
Electrostatic doping in overlapping FET regions improves channel control, cuts leakage, and supports nanoscale scaling with stronger drive current.
Gate-current sensing adjusts turn-on delay so power switches reach lower-voltage turn-on, cutting spikes and switching loss.
Sub-hundred-nanosecond photodetector readout improves low-light depth sensing accuracy without avalanche sensor complexity.
A 90° phase-shift transmission line and one optical control signal simplify RF switch routing while reducing loss, interference, and circuit complexity.
Pre-charging a capacitor before current steering boosts voltage headroom in switched current source circuits, improving DAC linearity and bandwidth.
A common magnetic bead equalizes parasitic inductance across parallel power devices to synchronize switching and improve current sharing.