Lapping Machines TRIZ Cases

Offset circumferential grooves disrupt pattern transfer from the pad to the wafer while maintaining high removal rates.

Plastic adhesive fills wafer openings to prevent cracks and silicon residue clogging during polishing.

A polishing apparatus diaphragm smooths pressure gradients between adjacent elastic membrane chambers to maintain uniform substrate contact.

A polishing apparatus uses a scanning mechanism to dress the pad with non-integer rotation and scanning cycles.

Segmented inner and outer membranes apply zone-specific pressure to correct slurry distribution variations and improve within-wafer uniformity.

Controlling abrasive grain concentration in the polishing solution reduces process-induced defects while maintaining high wafer flatness.

Segmented polishing inserts a polymer protection film step to inhibit etching reactions, preventing water mark defects while maintaining high polishing speed.

Continuous plate rotation during agent switching prevents carrier oscillation and micro scratches on silicon wafers.

A polishing pad features a resin film coating the pad portion to shield it during spindle mounting.

Intermittent polishing liquid supply minimizes wastage while maintaining uniform planarization.

Calibrates an eddy current sensor using a product wafer with known film thickness, eliminating manual pad peeling and reducing positioning errors.

Flotation modules recover reusable slurry from chemical mechanical planarization waste streams, reducing fresh material consumption and disposal costs.

A polishing control method combines in-situ measured values with stored default sequences to generate modified data for endpoint determination.

Parallel pressure controllers switch based on threshold values to maintain high precision across wide ranges, preventing edge drop.

A polishing apparatus cleans the pad by ejecting fluid during substrate transfer cycles.

Magnetic generators in the polishing head adjust fluid pressure to resolve non-uniform film thickness near partition walls.

Conditioning polishing pads to negative Rsk values prevents stick slip and reduces scratches on semiconductor polish target films.

Cerium oxide polishing agent with controlled crystallite diameter suppresses defects while maintaining high silicon oxide polishing rates.

Embedded film thickness sensors map wafer profiles while a controller adjusts local pressure to correct initial thickness variations.

Self-calibration via internal fiber and spectral waveform comparison eliminates manual calibration time while maintaining film thickness precision.

Dynamic temperature control prevents excessive etching by adjusting pad heat based on real-time film condition changes.

A slurry protection unit encloses the fluid passage between nozzle and supply ring to maintain flow integrity.

Non-uniform retainer ring thickness optimizes pressure distribution, reducing uneven wear and extending lifespan.

Trapezoidal grid grooves in a polishing pad reduce surface tension and prevent impurity discharge that degrades localized light scattering quality.

A stepped dresser surface holds superhard particles of increasing diameters to maintain continuous dressing action on chemical mechanical polishing pads.

Interconnected pores reduce slurry flow resistance and debris loading, improving CMP removal rates.

A wafer polishing method maintains in-plane thickness variation of the polishing pad at 2.0 μm or less to improve surface flatness.

Photo sensor monitors platen belt rotation to detect breakage and trigger an interlock, preventing wafer damage from undetected belt failure.

Adaptive uniform polishing system adjusts micro-pad rotation speeds and pressures to enhance wafer surface homogeneity.

A dummy disk contacts the rotating polishing table to stabilize measurement posture.

Sanding and buffing powder coated MDF reaches PCI 9-10 smoothness, surpassing traditional finish limits without liquid top coats.

In-situ gate etching creates a recess that guides contact placement, preventing misalignment caused by topography variations during CMOS fabrication.

Chemical mechanical polishing slurry reduces orthopaedic implant surface roughness below 10 nm.

Curved retainer end surfaces increase vertical distance from the holding surface to avoid corner collisions, minimizing damage and deformation during polishing.

Reversing carrier revolution every batch maintains dressing stability and prevents outer circumference sag without frequent pad dressing.

A machine learning model predicts substrate states from polishing conditions.

A substrate transfer device uses a tilting mechanism to orient the holder for delivery.

Aqueous polishing composition uses hydroxyethyl cellulose and polyacrylic acid to maintain stable abrasive suspension.

A cleaning portion forms a closed space over the light passing portion to supply fluid and remove debris.

A crescent injector delivers slurry between the wafer and pad.

A two-step polishing method uses a smaller pad to eliminate surface irregularities before switching to a larger pad for flatness.

A substrate polishing apparatus adjusts dresser moving speed across scan areas to maintain consistent surface finish.

An elevatable support unit adjusts height within a ring-shaped carrier head body to maintain contact pressure during semiconductor polishing.

Elastic bags regulate pressure via channels to solve uneven polishing on quadrangular substrates.

Additive manufacturing deposits distinct precursor compositions to form integrated endpoint detection windows in chemical mechanical polishing pads.

Infrared heaters and suction nozzles regulate polishing pad surface temperature without physical contact, preventing wafer scratches.

An elastic membrane substrate holder uses an infrared detector to measure thermal energy from the membrane surface.

An inclination adjusting device corrects rotational shaft tilt detected by sensors, maintaining concentric slurry pressure distribution on the wafer.