Lapping Machines TRIZ Cases

An abrasive-free porous pad chemically removes high substrate regions to cut CMP defects, contamination, and process variability.

A 3D CMP pad with hard and soft zones matched to wafer features improves planarization uniformity while reducing CMP-induced defects.

Variable-opacity privacy panels and edge lighting help ATMs protect user information in public spaces without sacrificing visibility.

Acid then base cleaning removes the low-refractive surface layer, reducing defects while preserving thin glass strength against impact.

Overlaid CMP endpoint signals let users define boundary-crossing windows that improve polishing uniformity and cut setup time.

Grooves and slurry passage holes improve slurry flow and removal consistency in glass disk polishing while cutting time, slurry use, and cost.

Acid then base cleaning removes the low-refractive surface layer after ion exchange, preserving compressive stress in thin glass.

By tuning binder tan δ through contact-surface temperature, one grindstone shifts from fast roughing to low-damage finishing.

Independent center and edge gas pressures use wafer thickness distribution data to stabilize polishing and improve uniformity.

Separate oxidation and abrasion zones on a CMP pad cut contamination, wear, and cracking in silicon carbide wafer polishing.

A thermoplastic-resin grindstone uses contact-surface temperature control to combine fast grinding and low-damage finishing in one tool.

Real-time pad thickness monitoring tracks CMP pad cut rate to trigger wear-based pad and conditioner replacement and keep polishing uniform.

Independent pressure chambers and a corrected response model help CMP match target film thickness across each substrate.

A split pump-side and spray-side pipe with an air-open inlet keeps liquid delivery stable while preventing siphon backflow and leakage.

Direct slurry delivery through the pad center enables localized CMP with better removal uniformity and flatness on uneven semiconductor wafers.

A CMP pad blends polyurethane with conductive fillers to move heat away, enabling higher downforce and removal rates without overheating.

Power spectrum mapping of polishing sound improves substrate endpoint detection despite condition variation, cutting process time and thickness variation.

Measured pad surface state is used to predict polishing loss and schedule dressing in free time slots, preserving throughput and pad life.

Multiple eddy current sensors in concentric platen rings improve CMP endpoint detection by tracking local thickness and compensating signal noise.

A liquid column gives optical notch finding a uniform wet path in CMP, reducing scattering and enabling accurate in-situ substrate alignment.

A mechanical arm and dual pickup units automate wafer loading, positioning, and transfer to raise polishing throughput and surface quality.

A liquid column creates a uniform optical path for wet CMP notch detection, reducing droplet scattering while keeping the substrate on-carrier.

A planarized resilient membrane improves CMP slurry distribution and pressure uniformity, reducing waste while maintaining wafer surface quality.

Adjusting pure water flow to pad wear keeps the CMP through-hole clear, preventing overflow and slurry entry during film thickness measurement.

Calculated pacing based on the longest process step reduces bottlenecks and substrate air time to improve quality consistency and yield.

Continuous level sensing and forecasted refill volumes keep CMP slurry fresh while reducing aged-slurry waste and supply interruptions.

Overlapping magnetic structures stabilize polishing head pressure and position to improve substrate dispersion, edge rates, and planarization.

Measures exposed polishing pad displacement during one-side wafer polishing, using liquid removal to capture dynamic recovery behavior.

Redirecting cleaning fluid onto the arm enclosure flushes dried polishing residue, reducing scratches, defects, and cleaning downtime.

Transparent windows and a cylindrical member keep slurry off the measurement path, improving real-time thickness accuracy and reducing cleaning cost.

Combining contact and non-contact thickness checks lets layered workpieces be thinned uniformly while avoiding air bubbles from uneven processing.

Evaporative cooling and dry-gas nozzles drop CMP pad temperature below ambient quickly, stabilizing polishing rate and in-plane uniformity.

Multiple resonant circuits switch frequencies by metal film thickness to balance high-frequency sensitivity with circuit quality factor in CMP.

A polymer slurry with alumina and diamond balances fast CMP removal with low roughness and reduced subsurface damage on polycrystalline substrates.

Broadband optical sensing through a quartz tube and single-core fiber improves CMP end-point precision across dielectric and metal layers.

Controlled pressure, angle, and polishing paste remove screen scratches while limiting swirls, heat buildup, and replacement needs.

A deformable cap floor uses chamber pressure changes to offset pad wear, improve wafer flatness, and reduce pad replacement downtime.