An external cavity coupled to a VCSEL internal lasing cavity increases modulation bandwidth through photon-photon resonance.
A laser collimating module uses a cylindrical lens to narrow the light emitting angle and collimate an elliptical beam into a linear output.
An optical amplification apparatus adjusts pump light power based on multiplexed wavelength count to optimize gain.
Processor-controlled laser tuning mechanisms adjust cavity length and wavelength currents to maintain continuous optical sweeps.
A concave reflecting mirror directs light into a phosphor layer, improving intensity uniformity without requiring thick substrates.
Wiring stubs add shunt capacitance near the chip to alleviate impedance mismatches, increasing the GB product and data rate of DMT systems.
Air-cavity dominant VCSEL structures use an air gap to dominate the Fabry-Perot mode for wavelength tuning.
Bonding a direct-bandgap chip to a silicon platform opening aligns active regions with waveguides, overcoming silicon's indirect bandgap limitation.
An electro-optical modulator tunes the resonance frequency of a VCSEL optical resonator to filter backscattered light signals.
A surface emitting laser array uses a three-dimensional electrode arrangement to reduce electric capacity and resistance.
Embedding optical structures within the VCSEL encapsulant eliminates separate components, reducing packaging complexity and backreflection noise.
Distinct time frequency domains enable laser power modulation for real-time calibration verification, eliminating reliance on external particle standards.
A symmetrical differential laser driver uses cascode transistors to drive diodes at high frequencies with low supply voltages.
A spectral converter with quantum dots absorbs broadband energy and re-emits narrowband light for a laser gain medium.
A semiconductor light-emitting device uses a spacer layer to bond a cap unit to a wiring substrate.
A bipolar current pulse drives a semiconductor laser diode to generate intense optical pulses with suppressed emission tails.
Pulse width modulation and a lookup table linearize optical amplifier output power, resolving instability from non-linear kink regions in the L-I curve.
A wavelength converter with a Cr3+ doped phosphor emits near-infrared light to excite indocyanine green.
A strain buffer layer with reduced compressive strain prevents crystal defect propagation, maintaining optical power output over extended periods.
Extracting optical fibers from the module housing resolves the contradiction between miniaturization and transmission loss.
A polymerized liquid crystal layer separates laser beams into orthogonally polarized components to suppress speckle artifacts in scanned projection systems.
Dynamic two-photon detuning suppresses non-adiabatic effects and excited state population, maintaining high fidelity during quantum gate operations.
Compressively relaxed buffer layers manage lattice mismatch and strain during metamorphic epitaxial growth of AlInGaP semiconductor stacks.
Segmented fibers use Kerr relocation to deliver high-energy supercontinuum beams without reaching damage thresholds.
A switched-capacitance charge pump circuit generates high-frequency current pulses for laser diodes using controlled capacitor charging and discharging cycles.
A wavelength-selective absorber suppresses ambient light reflection without reducing brightness, resolving the trade-off between contrast and efficiency.
A laser radar apparatus uses segmented substrates to transmit optical signals between vertical-cavity surface-emitting lasers and detectors.
Irradiating nanometer-scale materials with a particle beam induces bending through sputtering and stress gradients, enabling precise shaping of nano-tools.
A side-coupling structure merges aiming and laser beam fibers through physical contact to enable direct optical coupling.
A light source package uses a conductive optical element to monitor electrical parameters for real-time damage detection.
Asymmetric wire overlap increases parasitic capacitance, reducing the drive current pulse rise period to improve ToF measurement accuracy.
Replacing bulky mechanical drivers, the device steers beams via voltage-controlled refractive index changes in a p-n junction layer.
A network of optomechanical resonators couples through an optical radiation field to enable external control over synchronization states.
Extracting calibration sensors from the sealed build chamber maintains production pressure while enabling fast laser power measurement.
A liquid crystal optical deflector controls laser beam scanning via voltage-modulated refractive index changes.
Acute angled chip mounting positions the lens assembly parallel to the carrier edge, preventing contact during optical axis adjustment.
Consolidating redundant warnings from multiple TCM levels via overlap analysis to reduce bandwidth consumption and speed up fault location.
A surface emitting laser device integrates light receiving elements on the substrate to detect reflected optical signals.
A semiconductor package stacks a driver die and power transistor on opposite leadframe sides for direct electrical communication through the substrate.
An external optical etalon filters fundamental wavelengths to narrow the output spectrum of deep ultraviolet lasers.
Piezoelectric film fan drives airflow through hollow nozzle to cool optical module laser housing.
A light emitting device uses a voltage controlling part to adjust driving parameters for stable pulsed light output.
A nitride semiconductor light emitting device uses specific magnesium and aluminum concentration profiles in p-side layers to optimize carrier injection efficiency.
Curved diffusers redirect infrared light from VCSEL arrays to eliminate wasted edge illumination and ensure uniform eyebox coverage.
Time-delayed drive signals across segmented laser sections prevent simultaneous peak intensities, suppressing amplitude overshoot and ringing at high bit rates.
Closed-loop control manages light source bandwidth variations to preserve critical dimension accuracy under changing imaging conditions.
Integrating an APC circuit and photodiode on one substrate reduces device volume while stabilizing laser output against temperature changes.
Spatially modulated electrodes on whispering gallery mode resonators enable efficient phase matching between microwave and optical fields.
Picosecond UV laser pulses vaporize material before heat diffuses, reducing cleaning pulses and limiting thermal damage in FR4 substrates.