An active electromagnetic energy selective surface

Abstract

The application relates to an active electromagnetic energy selective surface, comprising a metal patch array, a diode array and a controlled feed structure; the metal patch array comprises a plurality of regularly-structured and spaced metal patches; the controlled feed structure comprises a first electrode patch and a second electrode patch; the diode array comprises a first diode array part and a second diode array part; along the transverse direction of the metal patch array, the first electrode patch is arranged on both sides of the metal patch array respectively, and the first diode array part is used for connecting adjacent metal patches and connecting adjacent metal patches and the first electrode patch; along the longitudinal direction of the metal patch array, the second electrode patch is arranged on both sides of the metal patch array respectively, and the second diode array part is used for connecting adjacent metal patches and connecting adjacent metal patches and the second electrode patch. The application effectively realizes the true receiving and transmitting compatibility of signals in the mode of introducing a bias circuit.

Description

Technical Field

[0001] This invention relates to the field of electromagnetic protection technology, and in particular to an active electromagnetic energy selective surface. Background Technology

[0002] Information technology has developed rapidly in the 21st century, and the trend towards integration and miniaturization is unstoppable. However, the integration and miniaturization of equipment will lead to a sharp increase in electromagnetic sensitivity, making it more susceptible to damage from strong electromagnetic radiation. Strong electromagnetic radiation source technology has also made significant progress in recent years and is now widely used in applications such as early warning radar and microwave ovens. As a result, research on electromagnetic protection technology for information technology equipment has begun to enter the field of scholarly attention.

[0003] Electromagnetic energy coupling into equipment primarily occurs through two pathways: the "front door" (antennas, various sensors) and the "back door" (cables, holes, gaps, etc.). The "back door" technology has been relatively mature after decades of research. The "front door," being the most crucial channel for electromagnetic energy to enter and exit the equipment, must be exposed, thus becoming the primary channel for strong electromagnetic energy coupling. Protective measures for the "front door" mainly include energy-selective surfaces, frequency-selective surfaces, or adding a protective module to the antenna's rear end. Frequency-selective surfaces can effectively filter out strong out-of-band electromagnetic energy, but are ineffective against strong in-band electromagnetic energy. When equipment faces strong electromagnetic radiation, the antenna's rear-end protective module cannot guarantee the safety of sensitive components and the equipment itself. Energy-selective surfaces, with their high field strength tolerance and low insertion loss, are the primary choice for "front door" protection under strong electromagnetic radiation. However, if the equipment to be protected requires high-power transmission, the energy-selective surface will automatically conduct, preventing the equipment from radiating energy outwards, thus limiting the application range of energy-selective surfaces. Summary of the Invention

[0004] The purpose of this invention is to provide an active electromagnetic energy selective surface.

[0005] To achieve the above-mentioned objectives, the present invention provides an active electromagnetic energy selective surface, comprising: a metal patch array, a diode array, and a controlled power supply structure;

[0006] The metal patch array includes: multiple metal patches arranged in a regular structure and spaced apart;

[0007] The controlled power supply structure includes: a first electrode patch and a second electrode patch;

[0008] The diode array includes: a first diode array portion and a second diode array portion;

[0009] Along the transverse direction of the metal patch array, the first electrode patch is arranged on both sides of the metal patch array, and the first diode array portion is used to connect adjacent metal patches, as well as to connect adjacent metal patches and the first electrode patch.

[0010] Along the longitudinal direction of the metal patch array, the second electrode patch is arranged on both sides of the metal patch array, and the second diode array portion is used to connect adjacent metal patches, as well as to connect adjacent metal patches and the second electrode patch.

[0011] According to one aspect of the present invention, the metal patch is a square metal patch, and a plurality of the metal patches are arranged in a rectangular array.

[0012] According to one aspect of the invention, the diodes in the first diode array portion are oriented in a consistent manner along the transverse direction of the metal patch array;

[0013] Along the longitudinal direction of the metal patch array, the diodes in the second diode array portion are oriented in the same direction.

[0014] According to one aspect of the present invention, both the first electrode patch and the second electrode patch are rectangular metal patches.

[0015] According to one aspect of the invention, it further includes: a dielectric substrate;

[0016] The metal patch array, the first electrode patch, and the second electrode patch are laid on the same side of the dielectric substrate;

[0017] The first electrode patch and the second electrode patch are respectively disposed at the edge of the dielectric substrate.

[0018] According to one aspect of the present invention, the controlled power supply structure further includes: an electrode power supply controller, and a first controlled electrode and a second controlled electrode respectively connected to the electrode power supply controller;

[0019] The first controlled electrode is connected to the first electrode patch, and the second controlled electrode is electrically connected to the second electrode patch; wherein, the electrode power supply controller is used to control the on / off state or voltage polarity of the first controlled electrode and the second controlled electrode to change the working state of the active electromagnetic energy selective surface;

[0020] The operating states include: zero bias state, positive bias cutoff state, and negative bias cutoff state.

[0021] According to one aspect of the present invention, if the electrode power supply controller controls the first controlled electrode and the second controlled electrode not to apply voltage, the active electromagnetic energy selection surface is in a zero-bias state, which is used for the back-end equipment to receive external low field strength working signals.

[0022] If the electrode feed controller controls the first controlled electrode and the second controlled electrode to apply a positive bias voltage, the active electromagnetic energy selection surface is in a positive bias cutoff state, reducing the response time of the energy selection surface;

[0023] If the electrode power supply controller controls the first controlled electrode and the second controlled electrode to apply a reverse bias voltage, the active electromagnetic energy selection surface is in a reverse bias cutoff state, which is used for the back-end equipment to radiate a strong field strength working signal to the outside.

[0024] According to one aspect of the present invention, the reverse-bias cutoff state of the active electromagnetic energy selective surface includes: a horizontal polarization state and a vertical polarization state;

[0025] If the electrode feed controller controls the first controlled electrode to apply a reverse bias voltage, the active electromagnetic energy selective surface is in a horizontal polarization state.

[0026] If the electrode feed controller controls the second controlled electrode to apply a reverse bias voltage, the active electromagnetic energy selective surface is in a vertical polarization state.

[0027] According to one aspect of the invention, the metal patch has a side length of 9 mm;

[0028] The spacing between adjacent metal patches is 1 mm;

[0029] The dielectric substrate has a thickness of 0.5 mm and an overall size of 310 mm * 310 mm.

[0030] According to one aspect of the invention, the dielectric substrate is made of Rogers 4350B.

[0031] According to one aspect of the present invention, a bias circuit is introduced into the design of the energy selective surface. By applying an external bias, the diode array as a whole is forward-biased or reverse-biased, thereby controlling the on and off state of the energy selective surface and achieving true signal transmission and reception compatibility of the equipment.

[0032] According to one aspect of the present invention, the present invention achieves the purpose of reducing the insertion loss of the energy selective surface and improving the protective performance of the energy selective surface by controlling the overall conduction and cutoff of the energy selective surface.

[0033] According to one aspect of the present invention, the present invention has lower small-signal insertion loss (within 2 GHz) and less energy leakage compared to conventional energy selective surfaces.

[0034] According to one aspect of the present invention, the bias circuit is introduced into the energy selective surface design, which can reduce the insertion loss and response time of the energy selective surface.

[0035] According to one aspect of the present invention, a biasing method is used to actively control the conduction state of the energy selective surface, achieving true compatibility between transmission and reception. Furthermore, the above-mentioned functional effects can be achieved by setting the surface only on one side of the dielectric substrate, resulting in a simple structure and high reliability.

[0036] According to one aspect of the present invention, the present invention can be implemented using conventional materials, is easy to process and manufacture, has low cost, and is simple in principle and easy to implement. Attached Figure Description

[0037] Figure 1 This is a structural diagram of an active electromagnetic energy selective surface according to an embodiment of the present invention;

[0038] Figure 2 This is a structural diagram of a controlled power supply structure according to an embodiment of the present invention;

[0039] Figure 3 This is an equivalent circuit diagram of an active electromagnetic energy selective surface under different bias voltages according to an embodiment of the present invention, wherein (a) represents the equivalent circuit in reverse bias state, zero bias state or non-conducting state, and (b) represents the equivalent circuit in forward bias state.

[0040] Figure 4 The S obtained by simulation under small-signal conditions using an active energy selective surface according to an embodiment of the present invention is as follows. 21 Structure diagram of the curve;

[0041] Figure 5 This is a waveform diagram of the incident end and the transmission end of an active energy selective surface when the surface is in the cut-off state and a strong external non-working signal is incident.

[0042] Figure 6 This is a waveform diagram of the incident and transmission ends of an active energy selective surface when it is in a polarized state and transmitting a high-power strong field signal. Detailed Implementation

[0043] To more clearly illustrate the technical solutions in the embodiments of the present invention or the prior art, the drawings used in the embodiments will be briefly described below. Obviously, the drawings described below are merely some embodiments of the present invention, and those skilled in the art can obtain other drawings based on these drawings without creative effort.

[0044] In describing embodiments of the present invention, the terms "longitudinal," "lateral," "upper," "lower," "front," "rear," "left," "right," "vertical," "horizontal," "top," "bottom," "inner," and "outer" express orientations or positional relationships based on the orientations or positional relationships shown in the relevant drawings. They are only for the convenience of describing the present invention and simplifying the description, and do not indicate or imply that the device or element referred to must have a specific orientation, or be constructed and operated in a specific orientation. Therefore, the above terms should not be construed as limitations on the present invention.

[0045] Combination Figure 1 and Figure 2 As shown, according to one embodiment of the present invention, an active electromagnetic energy selective surface includes: a metal patch array 1, a diode array 2, and a controlled power supply structure 3. In this embodiment, the metal patch array 1 includes: a plurality of regularly structured and spaced metal patches 11; in this embodiment, the metal patch array 1 is arranged in a two-dimensional array. In this embodiment, the controlled power supply structure 3 includes: a first electrode patch 31 and a second electrode patch 32; in this embodiment, the diode array 2 includes: a first diode array portion 21 and a second diode array portion 22; wherein, along the transverse direction of the metal patch array 1, the first electrode patches 31 are respectively arranged on both sides of the metal patch array 1, and the first diode array portion 21 is used to connect adjacent metal patches 11, and to connect adjacent metal patches 11 and the first electrode patch 31; along the longitudinal direction of the metal patch array 1, the second electrode patches 32 are respectively arranged on both sides of the metal patch array 1, and the second diode array portion 22 is used to connect adjacent metal patches 11, and to connect adjacent metal patches 11 and the second electrode patch 32.

[0046] Combination Figure 1 and Figure 2 As shown, according to one embodiment of the present invention, the metal patch 11 is a square metal patch, and multiple metal patches 11 are arranged in a rectangular array. In this embodiment, the side length of the metal patch 11 can be set to 9mm. In this embodiment, the spacing between the metal patches 11 can be set to 1mm, so that the metal patches 11 and the diodes form a 10mm*10mm assembly. Of course, the spacing can also be adjusted according to the size of the diodes in the diode array 2.

[0047] Combination Figure 1 and Figure 2 As shown, according to one embodiment of the present invention, along the transverse direction of the metal patch array 1, the diodes in the first diode array portion 21 are oriented in the same direction; for example, along the transverse direction of the metal patch array 1, in the diode array 2, the negative terminal of the diode is connected to the metal patch 11 on the left, and its anode is connected to the metal patch 11 on the right; along the longitudinal direction of the metal patch array 1, the diodes in the second diode array portion 22 are oriented in the same direction; for example, along the longitudinal direction of the metal patch array 1, the negative terminal of the diode in the diode array is connected to the upper metal patch 11, and its anode is connected to the lower metal patch 11.

[0048] Combination Figure 1 and Figure 2 As shown, according to one embodiment of the present invention, both the first electrode patch 31 and the second electrode patch 32 are rectangular metal patches. In this embodiment, to achieve connection with the metal patch array 1, the length of the first electrode patch 31 is consistent with the overall side length of the corresponding metal patch array 1, so that all metal patches 11 located at the edge of the metal patch array 1 in the lateral direction can be opposite to the first electrode patch 31. Similarly, the length of the second electrode patch 32 is consistent with the overall side length of the corresponding metal patch array 1, so that all metal patches 11 located at the edge of the metal patch array 1 in the longitudinal direction can be opposite to the second electrode patch 32.

[0049] The first electrode patch 31 and the second electrode patch 32 configured above can provide DC bias for the diode array 2 and provide a current loop, so that the diodes in the diode array 2 can conduct better.

[0050] Combination Figure 1 and Figure 2 As shown, according to one embodiment of the present invention, an active electromagnetic energy selective surface further includes a dielectric substrate 4. In this embodiment, the metal patch array 1, the first electrode patch 31, and the second electrode patch 32 are disposed on the same side of the dielectric substrate 4; the first electrode patch 31 and the second electrode patch 32 are respectively disposed at the edges of the dielectric substrate 4. In this embodiment, the dielectric substrate 4 used is a rectangular plate, which facilitates the regular arrangement of the metal patch array 1, the first electrode patch 31, and the second electrode patch 32.

[0051] Combination Figure 1 and Figure 2 As shown, according to one embodiment of the present invention, the diodes in diode array 2 are PIN diodes.

[0052] Combination Figure 1 and Figure 2 As shown, according to one embodiment of the present invention, the dielectric substrate 4 has a thickness of 0.5 mm and an overall size of 310 mm * 310 mm; in this embodiment, the dielectric substrate 4 is made of Rogers 4350B material.

[0053] Combination Figure 1 and Figure 2 As shown, according to one embodiment of the present invention, the metal patch array 1, the first electrode patch 31, and the second electrode patch 32 are respectively made of copper metal.

[0054] Combination Figure 1 and Figure 2 As shown, according to one embodiment of the present invention, the controlled power supply structure 3 further includes: an electrode power supply controller 33, a first controlled electrode 34 and a second controlled electrode 35 respectively connected to the electrode power supply controller 33; in this embodiment, the first controlled electrode 34 is connected to the first electrode patch 31, and the second controlled electrode 35 is electrically connected to the second electrode patch 32; wherein, the electrode power supply controller 33 is used to control the on / off state or voltage polarity of the first controlled electrode 34 and the second controlled electrode 35, so as to realize the corresponding changes of the first electrode patch 31 and the second electrode patch 32, thereby changing the working state of the active electromagnetic energy selective surface; in this embodiment, the working state includes: zero bias state and cutoff state.

[0055] According to one embodiment of the present invention, if the electrode feed controller 33 controls the first controlled electrode 34 and the second controlled electrode 35 to not apply voltage, the active electromagnetic energy selective surface is in a zero-bias state, used by the back-end equipment to receive low-field-strength working signals from the outside (low field strength refers to the field strength induced on the energy selective surface being lower than the field strength when the PIN diode is conducting); if the electrode feed controller 33 controls the first controlled electrode 34 and the second controlled electrode 35 to apply a certain forward bias voltage (the loading timing can be continuous loading or loading when it is determined that strong field irradiation is likely to occur), the active electromagnetic energy selective surface is in a cut-off state, reducing the response time of the energy selective surface under strong field-strength non-working signal irradiation from the outside; wherein, the purpose of forward bias is to reduce the response time of the energy selective surface, and strong field strength refers to the electric field strength induced on the energy selective surface under space field irradiation that is sufficient to turn on the PIN diode. If the electrode feed controller 33 controls the first controlled electrode 34 and the second controlled electrode 35 to apply a reverse bias voltage, the active electromagnetic energy selective surface is in a polarized state, used by the back-end equipment to radiate strong field-strength working signals to the outside. In this embodiment, when the backend device is in the transmitting state, there is a high voltage application process, which simultaneously applies a reverse bias to the active energy selective surface. In this embodiment, the active energy selective surface of the present invention exhibits only one polarity in the reverse bias cutoff state. After being reverse biased in one polarity direction, it has no effect on the other polarity direction, and the other polarity still has a protective effect. That is, when the active energy selective surface is in a horizontal polarization state, it does not affect the vertical direction and still has a protective effect in the vertical direction.

[0056] In this embodiment, the reverse-bias cutoff state of the active electromagnetic energy selective surface includes a horizontal polarization state and a vertical polarization state. Specifically, if the electrode feed controller 33 controls the first controlled electrode 34 to apply a reverse bias voltage, the active electromagnetic energy selective surface is in a horizontal polarization state. In this state, the back-end device can radiate electromagnetic waves of the same polarity outwards, achieving the beneficial effect of low-loss outward radiation. If the electrode feed controller 33 controls the second controlled electrode 35 to apply a reverse bias voltage, the active electromagnetic energy selective surface is in a vertical polarization state. In this state, the back-end device can radiate electromagnetic waves of the same polarity outwards, achieving the beneficial effect of low-loss outward radiation.

[0057] like Figure 3 As shown, the conduction and cutoff characteristics of the diode array 2 in the active energy selective surface of this invention are mainly determined by the DC bias. Specifically, when a low-field-strength working signal irradiates the active energy selective surface of this invention, no bias voltage is applied to the active energy selective surface, the diode array 2 is zero-biased, and the signal passes through the energy selective surface with low loss (see...). Figure 3(a) When a strong electromagnetic non-working signal irradiates the active energy selection surface of this invention, a forward bias voltage is applied to the active energy selection surface, causing the entire diode array 2 array to be forward biased, shortening its response time, reducing energy leakage, and effectively blocking external strong electromagnetic non-working signals (see...). Figure 3 (b) When a strong electromagnetic signal needs to be emitted, a reverse bias voltage is applied to the active energy selection surface of the present invention, causing part of the diode array 2 to be reverse biased, so that the active energy selection surface is in a polarized state. At this time, the emitted strong electromagnetic signal penetrates the energy selection surface with low loss in the same polarization direction (horizontal or vertical polarization) and radiates outward (see...). Figure 3 (a)). See also: Figure 3 As shown in (a), the equivalent capacitance of the diode is the smallest under reverse bias, the second largest under zero bias, and the largest under non-conducting conditions.

[0058] To further illustrate the technical effectiveness of this solution, simulation software was used to conduct a simulation.

[0059] In this embodiment, the following parameters are used for simulation modeling:

[0060] A dielectric substrate 4 with a side length of 310mm*310mm is used as a support. A metal patch array 1 and a diode array 2 are disposed on one side of the dielectric substrate 4. The metal patch array 1 is constructed with square metal patches 11 with a size of 9mm, and the spacing between adjacent metal patches 11 is 1mm. The total number of energy selective surface units is 30*30. The diodes in the diode array 2 are PIN diodes. In this embodiment, a first electrode patch 31 and a second electrode patch 32 are respectively arranged along the edge of the dielectric substrate 4.

[0061] like Figure 4 As shown, through simulation of the above simulation model, the maximum insertion loss of the active power selective shield is 1.1 dB (i.e., at 2 GHz).

[0062] like Figure 5 As shown, when a positive DC bias is applied, the response time of the active energy selective surface is shortened, and the energy penetrating the energy selective surface is significantly reduced, resulting in better protection performance.

[0063] like Figure 6 As shown, when a DC reverse bias voltage is applied, the waveform of a high-power, high-field-strength working signal can penetrate the active energy selective surface with low loss, that is, it does not affect the signal transmission.

[0064] The above description is merely an example of a specific solution of the present invention. For any devices and structures not described in detail herein, it should be understood that they are implemented using common devices and methods already available in the art.

[0065] The above description is merely one embodiment of the present invention and is not intended to limit the invention. Various modifications and variations can be made to the invention by those skilled in the art. Any modifications, equivalent substitutions, or improvements made within the spirit and principles of the present invention should be included within the scope of protection of the present invention.

Claims

1. An active electromagnetic energy selective surface, characterized in that, include: Metal patch array (1), diode array (2) and controlled power supply structure (3); The metal patch array (1) includes: a plurality of regularly structured and spaced metal patches (11). The controlled power supply structure (3) includes: a first electrode patch (31), a second electrode patch (32), an electrode power supply controller (33), a first controlled electrode (34) and a second controlled electrode (35) respectively connected to the electrode power supply controller (33); The diode array (2) includes: a first diode array portion (21) and a second diode array portion (22); Along the transverse direction of the metal patch array (1), the first electrode patch (31) is arranged on both sides of the metal patch array (1), and the first diode array portion (21) is used to connect the adjacent metal patch (11) and to connect the adjacent metal patch (11) and the first electrode patch (31). Along the longitudinal direction of the metal patch array (1), the second electrode patch (32) is arranged on both sides of the metal patch array (1), and the second diode array portion (22) is used to connect the adjacent metal patch (11) and to connect the adjacent metal patch (11) and the second electrode patch (32). The metal patch (11) is a square metal patch, and multiple metal patches (11) are arranged in a rectangular array. The first controlled electrode (34) is connected to the first electrode patch (31), and the second controlled electrode (35) is electrically connected to the second electrode patch (32); wherein, the electrode power supply controller (33) is used to control the on / off state or voltage polarity of the first controlled electrode (34) and the second controlled electrode (35) to change the working state of the active electromagnetic energy selection surface; The operating states include: zero bias state, positive bias cutoff state, and reverse bias cutoff state; The reverse-bias cutoff state of the active electromagnetic energy selective surface includes: a horizontal polarization state and a vertical polarization state; wherein, when the active electromagnetic energy selective surface is in the horizontal polarization state, it still has a protective effect in the vertical direction, and when the active electromagnetic energy selective surface is in the vertical polarization state, it still has a protective effect in the horizontal direction.

2. The active electromagnetic energy selective surface according to claim 1, characterized in that, Along the transverse direction of the metal patch array (1), the diodes in the first diode array portion (21) are oriented in the same direction; Along the longitudinal direction of the metal patch array (1), the diodes in the second diode array portion (22) are oriented in the same direction.

3. The active electromagnetic energy selective surface according to claim 2, characterized in that, Both the first electrode patch (31) and the second electrode patch (32) are rectangular metal patches.

4. The active electromagnetic energy selective surface according to claim 3, characterized in that, Also includes: Dielectric substrate (4); The metal patch array (1), the first electrode patch (31) and the second electrode patch (32) are laid on the same side of the dielectric substrate (4); The first electrode patch (31) and the second electrode patch (32) are respectively disposed at the edge of the dielectric substrate (4).

5. The active electromagnetic energy selective surface according to claim 4, characterized in that, If the electrode power supply controller (33) controls the first controlled electrode (34) and the second controlled electrode (35) to not apply voltage, the active electromagnetic energy selection surface is in a zero bias state, which is used for the back-end equipment to receive external low field strength working signals. If the electrode power supply controller (33) controls the first controlled electrode (34) and the second controlled electrode (35) to apply a positive bias voltage, the active electromagnetic energy selection surface is in a positive bias cutoff state, reducing the response time of the energy selection surface; If the electrode power supply controller (33) controls the first controlled electrode (34) and the second controlled electrode (35) to apply a reverse bias voltage, the active electromagnetic energy selection surface is in a reverse bias cutoff state, which is used for the back-end equipment to radiate a strong field strength working signal to the outside.

6. The active electromagnetic energy selective surface according to claim 5, characterized in that, If the electrode feed controller (33) controls the first controlled electrode (34) to apply a reverse bias voltage, the active electromagnetic energy selection surface is in a horizontal polarization state; If the electrode feed controller (33) controls the second controlled electrode (35) to apply a reverse bias voltage, the active electromagnetic energy selection surface is in a vertical polarization state.

7. The active electromagnetic energy selective surface according to claim 6, characterized in that, The side length of the metal patch (11) is 9mm; The spacing between adjacent metal patches (11) is 1 mm; The dielectric substrate (4) has a thickness of 0.5 mm and an overall size of [missing information]. .

8. The active electromagnetic energy selective surface according to claim 7, characterized in that, The dielectric substrate (4) is made of Rogers 4350B.

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