High-gain millimeter-wave polarization reconfigurable antenna

Abstract

The application discloses a high-gain millimeter wave polarization reconfigurable antenna and belongs to the technical field of wireless communication.The application provides a high-gain millimeter wave polarization reconfigurable antenna, and the whole antenna structure is completed on two layers of dielectric substrates.Polarization diversity is realized by connecting the center patch of two groups of parasitic short columns by using pin diode switches, and the polarization state can be switched in the directions of ±45 degrees.Then, in order to improve the radiation performance of the antenna, an extended semi-ellipsoid lens is added to the antenna, so that the antenna gain is increased by about 10 dB, and therefore, the integrated lens antenna is an effective method for developing the millimeter wave polarization reconfigurable antenna.The gain-enhanced polarization reconfigurable antenna has the advantages of high gain, low cost and stable radiation pattern and is an ideal choice for low-cost millimeter wave applications of the fifth generation (5G) communication technology.

Description

Technical Field

[0001] The present invention belongs to the technical field of wireless communications, and in particular to a high-gain millimeter-wave polarization reconfigurable antenna. Background Art

[0002] In recent years, with the rapid development of wireless communication technology, the requirements for antenna performance have become increasingly stringent. Traditional millimeter-wave antennas are often fixed and cannot be adjusted to suit different application scenarios, which limits their flexibility and performance in practical applications. Therefore, people have begun to explore the design and optimization of reconfigurable millimeter-wave antennas. Polarization is a key characteristic of antennas, which determines the direction and method in which the antenna radiates or receives electromagnetic waves. By adjusting the polarization state of the antenna, it is possible to receive and transmit signals with different polarization modes, thereby improving the performance of the communication system. Millimeter-wave polarization reconfigurable antennas can electronically adjust their polarization state without changing the physical structure of the antenna to adapt to different communication environments and requirements.

[0003] Polarization-reconfigurable antennas can alleviate polarization mismatch problems and suppress fading losses caused by multipath effects, thereby effectively improving the performance and link quality of communication systems. Polarization switching between linear polarization and left and right circular polarization has attracted increasing research attention. However, all of these designs operate in the microwave band. With the rapid development of mobile communications, some wireless platforms need to operate in the millimeter-wave band to achieve wireless communications for fifth-generation (5G) and beyond. Therefore, the development of polarization-reconfigurable antennas in the millimeter-wave band is an inevitable trend for future high-data-rate communication links. However, existing low-band polarization-reconfigurable antennas are difficult to extend to the millimeter-wave band using pin diodes. Polarization reconfiguration is achieved through a reconfigurable feeding network and gain enhancement is achieved using an array configuration. However, these millimeter-wave feeding networks suffer from high losses and occupy a large space. Therefore, a millimeter-wave polarization-reconfigurable patch antenna with a dielectric lens for gain enhancement is proposed. In polarization-reconfigurable antennas, the introduction of a dielectric lens can manipulate the antenna's radiation characteristics by changing the propagation path and phase distribution of electromagnetic waves. Specifically, the addition of a dielectric lens can optimize the antenna's radiation pattern, increase antenna gain, reduce sidelobe levels, and suppress cross-polarization, thereby improving the overall performance of the antenna. Based on the above, a high-gain millimeter-wave polarization reconfigurable antenna is proposed, which is in great demand. Summary of the Invention

[0004] The object of the present invention is to provide a high-gain millimeter-wave polarization reconfigurable antenna to solve the problems raised in the background technology.

[0005] In order to achieve the above object, the technical solution adopted by the present invention is:

[0006] A high-gain millimeter-wave polarization reconfigurable antenna includes a first dielectric substrate and a second dielectric substrate, wherein a first metal floor is fixedly arranged between the first dielectric substrate and the second dielectric substrate, and a second metal floor is fixedly connected to the bottom surface of the second dielectric substrate; a semi-ellipsoidal lens extending from top to bottom is connected to the upper surface of the first dielectric substrate, and the extended semi-ellipsoidal lens improves the radiation performance of the antenna, and an integrated lens antenna is developed, which significantly enhances the gain of the antenna and stabilizes the radiation pattern within the bandwidth; a radiation patch is also attached to the upper surface of the first dielectric substrate, and the radiation patch is centrally symmetrically arranged about the long side of the first dielectric substrate; a grounded coplanar waveguide (GCPW) feeding port is provided at the edge of the first dielectric substrate and the second dielectric substrate, and the grounded coplanar waveguide (GCPW) is a planar waveguide structure using a ground plane auxiliary line, and the grounded coplanar waveguide (GCPW) ) The feeding port is used to excite or receive electromagnetic waves in antenna design. It is a commonly used transmission line structure. Its characteristic is that the central conductor of the transmission line and the ground planes on both sides are not on the same plane, but the electromagnetic wave radiation of the microwave signal is limited by ground planes on different planes, and no additional reference ground plane is required; one end of the grounded coplanar waveguide (GCPW) feeding port is connected to the microstrip line, and the other end is connected to the first metal floor. The top transmission line of the grounded coplanar waveguide (GCPW) adopts a "ground-signal-ground (GSG)" structure, the middle layer is a dielectric layer, and the bottom layer is a ground layer. The top and bottom ground layers are interconnected by plated through holes (PTH); the end of the microstrip line away from the grounded coplanar waveguide (GCPW) feeding port is connected to the radiation patch, and the grounded coplanar (GCPW) waveguide feeding port directly feeds the radiation patch through the microstrip line.

[0007] Preferably, the first dielectric substrate is made of Rogers 6002 plate, the second dielectric substrate is made of Rogers 5880 plate, and the first dielectric substrate and the second dielectric substrate have different heights.

[0008] Preferably, cut corners are provided at the two corners of the grounded coplanar waveguide (GCPW) feeding port, and the cut corners are both set to be isosceles right triangles; a third metal column is provided at the grounded coplanar waveguide (GCPW) feeding port, the top end of the third metal column is connected to the upper surface of the first dielectric substrate, and the bottom end is connected to the second metal plate, and passes through the first dielectric substrate, the first metal floor, the second dielectric substrate and the second metal floor from top to bottom.

[0009] Preferably, a PIN diode switch is further provided on the first dielectric substrate, the PIN diode switch including a first PIN diode switch and a second PIN diode switch. The radiating patch is fixed with a first rectangular radiating patch and a second rectangular radiating patch in the +45° direction and -45° direction, respectively. One end of the first PIN diode switch is connected to the radiating patch, and the other end is connected to the first rectangular radiating patch. One end of the second PIN diode switch is connected to the radiating patch, and the other end is connected to the second rectangular radiating patch. The antenna controls the connection between the central patch and the parasitic short column through the PIN diode switch, thereby reconfiguring the polarization between +45° and -45° linear polarization radiation.

[0010] Preferably, a first metal column is fixedly connected to the bottom surface of the first rectangular radiation patch and the second rectangular radiation patch, and the bottom end of the first metal column passes through the first dielectric substrate, the first metal floor, the second dielectric substrate, and the second metal floor in sequence from top to bottom.

[0011] Preferably, when the first PIN diode switch is turned on and the second PIN diode switch is turned off, the first metal column below the first rectangular radiating patch is connected to the central radiating patch to form a short patch antenna structure, and the current is guided along the +45° direction to form a +45° polarization; when the first PIN diode switch is turned off and the second PIN diode switch is turned on, the short column below the second rectangular radiating patch is connected to the central radiating patch to form a short patch antenna structure, and the current is guided along the -45° direction to form a -45° polarization; therefore, the antenna of the present invention is a polarization reconfigurable antenna.

[0012] Preferably, a square groove is etched on the first metal plate, a fourth metal column is provided in the square groove, and the second metal column is arranged directly below the microstrip line, one end of which is connected to the first metal floor, and the other end is connected to the second metal floor, passing through the second dielectric substrate to form a substrate integrated waveguide (SIW) cavity. The substrate integrated waveguide (SIW) cavity structure can improve the bandwidth and radiation efficiency of the antenna.

[0013] Compared with the prior art, the present invention provides a high-gain millimeter-wave polarization reconfigurable antenna with the following advantages:

[0014] (1) To improve the radiation performance of the antenna, the present invention adds an extended semi-ellipsoidal lens to the antenna. The lens antenna design can achieve higher gain due to its special focusing ability, which can effectively focus the electromagnetic beam on the transmitting or receiving element. The addition of the lens in the present invention increases the antenna gain by approximately 10 dB;

[0015] (2) The present invention uses a pin diode switch to connect the central patches of two groups of parasitic short columns to achieve polarization diversity, and can switch the polarization state in the ±45° direction.

[0016] (3) The application adopts a ground coplanar waveguide (GCPW) structure, which is a kind of planar waveguide structure assisted by a ground plane. The GCPW structure has the characteristics of low loss, especially excellent performance at millimeter wave frequencies. This means that in high-frequency applications, the antenna of the GCPW structure can transmit signals more effectively, reduce energy loss, and thus improve overall performance. The GCPW structure also has a simple manufacturing process and lower cost. Compared with some other complex antenna structures, the GCPW structure is easier to manufacture and integrate into various devices, reducing production costs. The GCPW structure also has excellent broadband performance. Due to the special design of the GCPW structure, it can support a wider frequency range, so that the antenna can adapt to a variety of different application scenarios.

[0017] (4) The application adopts a substrate integrated waveguide (SIW) cavity structure to improve the bandwidth and radiation efficiency of the antenna. BRIEF DESCRIPTION OF DRAWINGS

[0018] Figure 1 is the overall structure schematic diagram of the high-gain millimeter wave polarization reconfigurable antenna mentioned in embodiment 1 of the application;

[0019] Figure 2 is the top view structure schematic diagram of the high-gain millimeter wave polarization reconfigurable antenna mentioned in embodiment 1 of the application;

[0020] Figure 3 is the side view structure schematic diagram of the high-gain millimeter wave polarization reconfigurable antenna mentioned in embodiment 1 of the application;

[0021] Figure 4 is the size labeling schematic diagram of the high-gain millimeter wave polarization reconfigurable antenna mentioned in embodiment 1 of the application in the top view state;

[0022] Figure 5 is the size labeling schematic diagram of the high-gain millimeter wave polarization reconfigurable antenna mentioned in embodiment 1 of the application in the side view state;

[0023] Figure 6 is the substrate integrated waveguide (SIW) cavity structure size labeling schematic diagram of the high-gain millimeter wave polarization reconfigurable antenna mentioned in embodiment 1 of the application;

[0024] Figure 7 is the internal reconfigurable radiation patch size labeling schematic diagram of the high-gain millimeter wave polarization reconfigurable antenna mentioned in embodiment 1 of the application;

[0025] Figure 8 is the reflection coefficient and gain result curve diagram of the high-gain millimeter wave polarization reconfigurable antenna mentioned in embodiment 1 of the application;

[0026] Figure 9 These are the E-plane and H-plane radiation patterns of the high-gain millimeter-wave polarization reconfigurable antenna mentioned in Example 1 of the present invention at 26.6 GHz.

[0027] Description of the numbers in the figure:

[0028] 1. Extended semi-ellipsoidal lens; 2. First dielectric substrate; 201. Radiating patch; 202. First PIN diode switch; 203. Second PIN diode switch; 204. Grounded coplanar waveguide feeding port; 205. Microstrip line; 206. First rectangular radiating patch; 207. Second rectangular radiating patch; 3. First metal floor; 4. Second dielectric substrate; 401. Fourth metal pillar; 402. Substrate-integrated waveguide cavity; 5. Second metal floor; 6. First metal pillar; 7. Second metal pillar; 8. Third metal pillar. DETAILED DESCRIPTION

[0029] The following describes embodiments of the present invention in detail, examples of which are shown in the accompanying drawings, wherein the same or similar reference numerals throughout represent the same or similar elements or elements having the same or similar functions. The embodiments described below with reference to the accompanying drawings are exemplary and are intended to be used to explain the present invention, and are not to be construed as limiting the present invention.

[0030] In the description of the present invention, it should be understood that the terms "length", "width", "up", "down", "front", "back", "left", "right", "vertical", "horizontal", "top", "bottom", "inside", "outside", etc., indicating the orientation or position relationship, are based on the orientation or position relationship shown in the accompanying drawings, and are only for the convenience of describing the present invention and simplifying the description, rather than indicating or implying that the device or element referred to must have a specific orientation, be constructed and operated in a specific orientation, and therefore cannot be understood as limiting the present invention.

[0031] Furthermore, the terms "first" and "second" are used for descriptive purposes only and should not be construed as indicating or implying relative importance or implicitly specifying the number of the technical features being referred to. Thus, a feature identified as "first" or "second" may explicitly or implicitly include one or more of the features. In the description of the present invention, "plurality" means two or more, unless otherwise specifically defined.

[0032] In the embodiments of the present invention, unless otherwise expressly specified or limited, the terms "installed," "connected," "connected," "fixed," etc. should be understood in a broad sense. For example, they may refer to fixed connection, detachable connection, or integration; mechanical connection or electrical connection; direct connection or indirect connection through an intermediate medium; internal communication between two components or interaction between two components. Those skilled in the art will understand the specific meanings of the above terms in the present invention based on specific circumstances.

[0033] Example 1:

[0034] Reference Figure 1 、 Figure 2 and Figure 3 As shown, an embodiment provides a high-gain millimeter-wave polarization reconfigurable antenna, including an extended semi-ellipsoidal lens 1, a radiation patch 201, a microstrip line 205, a grounded coplanar waveguide (GCPW) feeding port 204, a first PIN diode switch 202 and a second PIN diode switch 203, a first rectangular radiation patch 206 and a second rectangular radiation patch 207, a third metal pillar 8, a first dielectric substrate 2, a first metal pillar 6, a second metal pillar 7, a fourth metal pillar 401, a substrate integrated waveguide (SIW) cavity 402, a first metal floor 3, a second dielectric substrate 4, and a second metal floor 5.

[0035] Reference Figure 1 and Figure 3As shown, the extended semi-ellipsoidal lens 1, the first dielectric substrate 2, the first metal floor 3, the second dielectric substrate 4, and the second metal floor 5 are arranged in order from top to bottom. It should be noted that the extended semi-ellipsoidal lens 1 is located on the upper surface of the first dielectric substrate 2 and is connected to the upper surface of the first dielectric substrate 2; due to its special focusing ability, the extended semi-ellipsoidal lens 1 can effectively focus the electromagnetic beam on the transmitting or receiving element, thereby increasing the antenna gain by about 10 dB; the radiation patch 201 is connected to the upper surface of the first dielectric substrate 2; one end of the grounded coplanar waveguide (GCPW) feeding port 204 is connected to the microstrip line 205, and the other end is connected to the first metal floor 3; the top transmission line of the grounded coplanar waveguide (GCPW) adopts a "ground-signal-ground (GSG)" structure, the middle layer is a dielectric layer, and the bottom layer is a ground layer, and the top and bottom ground layers are interconnected through plated through holes (PTH); the grounded coplanar waveguide (GCPW) feeding port 204 directly feeds the radiation patch 201; one end of the first metal pillar 6 is connected to the first rectangular radiation patch 206 (or the second rectangular radiation patch 207) of the first pin diode switch 202 (or the second pin diode switch 203), The other end passes through the second metal floor 5, the second dielectric substrate 4, the first metal floor 3, and the first dielectric substrate 2 from bottom to top; a square groove is etched on the first metal floor 3 to allow the first metal pillar 6 to pass through; one end of the second metal pillar 7 is connected to the first metal floor 3 and the other end is connected to the second metal floor 5, passing through the second dielectric substrate 4 to form a substrate integrated waveguide (SIW) cavity 402, thereby improving the bandwidth and radiation efficiency of the antenna; one end of the third metal pillar 8 is connected to the grounded coplanar waveguide (GCPW) feeding port 204, and the other end passes through the second metal floor 5, the second dielectric substrate 4, the first metal floor 3, and the first dielectric substrate 2 from bottom to top; the three fourth metal pillars 401 directly below the microstrip line 205 are used to adjust the impedance matching of the antenna.

[0036] Reference Figure 2 As shown, a first PIN diode switch 202 and a second PIN diode switch 203 are located on the upper surface of a first dielectric substrate 2. One end of the first PIN diode switch 202 and the second PIN diode switch 203 are connected to a first rectangular radiating patch 206 in a +45° direction and a second rectangular radiating patch 207 in a -45° direction, respectively, and the other end is connected to a square patch in the radiating patch 201. The radiating patch 201 is centrally symmetrically arranged about the long side of the first dielectric substrate 2. The present invention utilizes the first PIN diode switch 202 and the second PIN diode switch 203 to connect the central patches of two groups of parasitic metal stubs to achieve polarization diversity, and can switch polarization states in the ±45° directions to achieve specific communication performance optimization.

[0037] The following is a further explanation of the inherent characteristics of the patch in combination with experiments:

[0038] Reference Figures 4 to 7 As shown in the experiment, taking the millimeter wave polarization reconfigurable antenna with a center frequency of 26.6 GHz as an example, the optimal size is optimized as follows: the thickness of the first dielectric substrate 2 is H 1=0.5 mm, its dielectric constant is 2.94; the thickness of the second dielectric substrate 4 is H 2=0.787 mm, and its dielectric constant is 2.2; the length and width of the first metal floor 3 and the second metal floor 5 are L a =25 mm and W b =20 mm; the diameter of the first metal column 6 is R sp =0.15 mm; the distance between the center of the first metal pillar and the center of the third metal pillar of the first metal pillar 6 D sp =1.5 mm; the diameter of the second metal column 7 and the diameter of the third metal column 8 are R mp =1.7 mm; the distance between the center of the first metal pillar and the center of the third metal pillar of the second metal pillar 401 L mp =1.7 mm; the length and width of the rectangular radiation patches 206 and 207 are L sp = 2 mm and W sp =0.8 mm; the length and width of the square groove dug out from the first metal floor 3 are L c =6.6 mm; width of microstrip line 205 W f =0.55 mm; the length of the two rectangles etched on the radiation patch 201 is L s =0.8 mm; width is W s =0.24 mm; the length and width of the substrate integrated waveguide (SIW) cavity 402 are L cy =7 mm; the length of the first pin diode switch 202 and the second pin diode switch 203 are both 0.4 mm, and the width are both 0.15 mm.

[0039] Reference Figure 8Figure 2 shows the reflection coefficient and gain curves for the high-gain millimeter-wave polarization reconfigurable antenna according to an embodiment of the present invention. Due to the symmetry of the antenna structure, both polarization states exhibit identical simulation results. The results in the figure show that the antenna's simulated -10 dB impedance bandwidth is 1.2 GHz, ranging from 26.05 to 27.27 GHz. At 26.6 GHz, the gain is greater than 16.4 dBi. Compared to an antenna without a lens, this antenna exhibits a 10-12 dB gain improvement, demonstrating its high gain advantage.

[0040] Reference Figure 9 Figure 2 shows the E-plane radiation pattern and H-plane radiation pattern of the high-gain millimeter-wave polarization reconfigurable antenna at 26.6 GHz according to an embodiment of the present invention. The results in the figure show that the antenna has good radiation characteristics.

[0041] The above experiments demonstrate that the high-gain millimeter-wave polarization reconfigurable antenna proposed in this invention utilizes a pin diode connected to the central patch of two sets of parasitic metal stubs to achieve polarization diversity, enabling polarization switching within ±45°. To enhance the antenna's radiation performance, an extended semi-ellipsoidal lens is incorporated. The introduction of the dielectric lens modulates the antenna's radiation characteristics by altering the propagation path and phase distribution of electromagnetic waves. Specifically, the addition of the dielectric lens optimizes the antenna's radiation pattern, increases antenna gain, reduces sidelobe levels, and suppresses cross-polarization, thereby improving the antenna's overall performance. The introduction of the lens in this invention increases antenna gain by approximately 10-12 dB. This gain-enhanced polarization reconfigurable antenna offers advantages such as high gain, low cost, and a stable radiation pattern. It is an ideal choice for low-cost millimeter-wave applications in fifth-generation (5G) communications technology and is suitable for a variety of wireless systems, including satellite and mobile communications.

[0042] The above are only preferred specific embodiments of the present invention, but the scope of protection of the present invention is not limited thereto. Any technician familiar with this technical field, within the technical scope disclosed by the present invention, who makes equivalent replacements or changes based on the technical solutions and inventive concepts of the present invention, should be covered by the scope of protection of the present invention.

Claims

1. A high-gain millimeter-wave polarization reconfigurable antenna, characterized in that: The invention comprises a first dielectric substrate (2) and a second dielectric substrate (4), wherein a first metal floor (3) is fixedly provided between the first dielectric substrate (2) and the second dielectric substrate (4), and a second metal floor (5) is fixedly connected to the bottom surface of the second dielectric substrate (4); a semi-ellipsoidal lens (1) extending from top to bottom is connected to the upper surface of the first dielectric substrate (2), and a radiation patch (201) is also attached to the upper surface of the first dielectric substrate (2); a grounded coplanar waveguide feeding port (204) is provided at the edge of the first dielectric substrate (2) and the second dielectric substrate (4), one end of the grounded coplanar waveguide feeding port (204) is connected to a microstrip line (205), and the other end is connected to the first metal floor (3); an end of the microstrip line (205) away from the grounded coplanar waveguide feeding port (204) is connected to the radiation patch (201), and the grounded coplanar waveguide feeding port (204) directly feeds the radiation patch (201) through the microstrip line (205); A third metal column (8) is provided at the grounded coplanar waveguide feeding port (204), the top end of the third metal column (8) passes through the grounded coplanar waveguide feeding port (204) and is connected to the upper surface of the first dielectric substrate (2), and the bottom end passes through the first dielectric substrate (2), the first metal floor (3), and the second dielectric substrate (4) in sequence from top to bottom and is connected to the second metal floor (5); A PIN diode switch is further provided on the first dielectric substrate (2), the PIN diode switch comprising a first PIN diode switch (202) and a second PIN diode switch (203); a first rectangular radiating patch (206) and a second rectangular radiating patch (207) are fixedly provided in the +45° direction and -45° direction of the radiating patch (201), respectively; one end of the first PIN diode switch (202) is connected to the radiating patch (201), and the other end is connected to the first rectangular radiating patch (206); one end of the second PIN diode switch (203) is connected to the radiating patch (201), and the other end is connected to the second rectangular radiating patch (207); A first metal column (6) is fixedly connected to the bottom surfaces of the first rectangular radiation patch (206) and the second rectangular radiation patch (207), and the first metal column (6) passes through the first dielectric substrate (2), the first metal floor (3), the second dielectric substrate (4), and the second metal floor (5) in sequence from top to bottom.

2. The high-gain millimeter-wave polarization reconfigurable antenna according to claim 1, characterized in that: When the first PIN diode switch (202) is turned on and the second PIN diode switch (203) is turned off, the first metal column (6) below the first rectangular radiating patch (206) is connected to the central radiating patch (201), forming a short patch antenna structure, and the current is guided along the +45° direction, forming a +45° direction polarization; when the first PIN diode switch (202) is turned off and the second PIN diode switch (203) is turned on, the first metal column below the second rectangular radiating patch (207) is connected to the central radiating patch (201), forming a short patch antenna structure, and the current is guided along the -45° direction, forming a -45° direction polarization.

3. The high-gain millimeter-wave polarization reconfigurable antenna according to claim 1, characterized in that: A square groove is etched on the first metal floor (3), a fourth metal column (401) is arranged in the square groove, and the fourth metal column (401) is arranged directly below the microstrip line (205); one end of the second metal column (7) is connected to the first metal floor (3), and the other end is connected to the second metal floor (5), passing through the second dielectric substrate (4) to form a substrate integrated waveguide cavity (402).

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