High-strength impact-resistant photoelectric glass material as well as preparation method and application thereof

Abstract

The invention provides a high-strength impact-resistant photoelectric glass material, a preparation method of the high-strength impact-resistant photoelectric glass material and an application of the high-strength impact-resistant photoelectric glass material. The invention discloses a high-temperature-resistant glass which comprises or consists of the following components: 50 to 60 percent of SiO2, 0.1 to 5 percent of Bi2O3, 1 to 5 percent of Li2O, 10 to 16 percent of Na2O, 0 to 1 percent of K2O, 1 to 5 percent of B2O3, 12 to 18 percent of Al2O3, 1 to 7 percent of ZrO2, 1 to 4 percent of MgO, 1 to 3 percent of CaO, 0.1 to 3 percent of CeO2 and 0 to 2 percent of Sb2O3. The photoelectric glass material has the advantages of excellent spectrum transmittance, good anti-halation and anti-crosstalk performance, high baking temperature resistance, good chemical strengthening property, and good bending resistance and falling ball impact resistance after chemical strengthening. The composite material can be used for preparing a display screen and a protective cover plate, and plays an important role in the aspects of smart phones, tablet personal computers, notebook computers, smart watches, vehicle-mounted applications, public inquiry systems, ATMs, song and dish ordering systems, industrial control, medical treatment and the like.

Description

Technical Field

[0001] The present application relates to the technical field of glass, and particularly relates to a high-strength impact-resistant optoelectronic glass material, a preparation method thereof, and an application thereof. Background Art

[0002] Any discussion of the prior art throughout the specification should not be taken as an admission that such prior art is well known or constitutes a part of the common general knowledge in the art.

[0003] Disclosing the information of this background art section is only intended to increase the understanding of the overall background of the present invention, and should not necessarily be regarded as an admission or imply in any form that this information constitutes the prior art already known to those of ordinary skill in the art.

[0004] The high-performance optoelectronic glass material is a high-strength touch cover glass, which is one of the key materials for capacitive touch screens and also a protective cover glass. It is widely used in various fields such as smart phones, tablet computers, laptop computers, smart watches, vehicle-mounted applications, public inquiry systems, ATMs, song and dish ordering systems, industrial control, and medical treatment. In recent years, due to the increasing sales volume, larger screen sizes of electronic products such as smart phones and tablet computers, and the development of the non-metallic back cover market, the current demand for touch screens and cover glasses is strong and shows a stable growth. At the same time, due to the characteristics of high strength, light weight, and high transmittance of the high-performance optoelectronic glass, it has been gradually accepted and applied in large-size fields such as solar photovoltaics, new energy electric vehicles, and high-speed trains. In the future, there will be greater potential demand for high-performance optoelectronic glass products, and the market prospect is constantly promising.

[0005] However, glass itself has the characteristics of brittleness and fragility. To make the glass play a protective role and not be easily broken, chemical strengthening technology is applied to the production of high-performance optoelectronic glass materials. This technology can effectively reduce the length and depth of microcracks on the glass surface, and sometimes can even completely eliminate smaller microcracks. By forming a layer of compressive stress layer on the glass surface, the mechanical strength of the glass is enhanced. When an external tensile stress acts on the glass surface, this layer of compressive stress needs to be offset first before the glass can be damaged. This enhancement method makes the high-performance optoelectronic glass material have higher strength and impact resistance, and can better meet the requirements of the screen display and protective cover field.

[0006] The object of the present invention is to overcome or improve at least one shortcoming in the prior art, or to provide a useful alternative. Unless the context clearly requires otherwise, throughout the specification and claims, words such as "comprising", "including", etc. should be interpreted in an inclusive sense rather than an exclusive or exhaustive sense; that is, in the sense of "including, but not limited to". Summary of the Invention

[0007] The object of the present invention is to provide a high-strength and impact-resistant optoelectronic glass material, its preparation method and application. The optoelectronic glass material provided by the present invention has excellent spectral transmittance, excellent stray light elimination and crosstalk prevention performance after high-temperature reduction treatment, has a high baking temperature resistance, has a high bending strength after chemical strengthening, and has good impact resistance, and can achieve comprehensive improvement in optical properties, mechanical strength and environmental adaptability, and can be used to prepare display screens and protective covers.

[0008] In order to achieve the above object, the present invention provides the following technical solutions:

[0009] In a first aspect, the present invention provides a glass composition which, by mass percentage, comprises or consists of the following components: 50-60% of SiO 2 , 0.1-5% of Bi 2 O 3 , 1-5% of Li 2 O, 10-16% of Na 2 O, 0-1% of K 2 O, 1-5% of B 2 O 3 , 12-18% of Al 2 O 3 , 1-7% of ZrO 2 , 1-4% of MgO, 1-3% of CaO, 0.1-3% of CeO 2 and 0-2% of Sb 2 O 3 .

[0010] In the basic composition of the glass composition of the present invention, it must simultaneously contain specific contents of SiO 2 , Bi 2 O 3 , Li 2 O, Na 2 O, B 2 O 3 , Al 2 O 3 , ZrO 2 , MgO, CaO and CeO 2 , and optionally contains K 2 O and Sb 2 O 3 , which makes the glass material with the composition of the present invention have excellent spectral transmittance, excellent stray light elimination and crosstalk prevention performance, a high baking temperature resistance, a high bending strength, good impact resistance, drop resistance and other properties, and can have good process adaptability during processing, physical and chemical reduction and chemical strengthening.

[0011] SiO2 exists in the form of [SiO 4 tetrahedrons in the glass structure, which plays a role in reducing the thermal expansion coefficient of the glass and improving the thermal stability, heat resistance, chemical stability, mechanical strength, etc. of the glass. Al 2 O 3 is an intermediate oxide of the glass. Most of the Al in the glass structure 3+ can form [AlO 4 tetrahedral structures. The volume of [AlO 4 in the glass is 41 cm 3 / mol, and the volume of [SiO 4 is 27 cm 3 / mol. The volume of [AlO 4 is 52% larger than that of [SiO 4 . Therefore, [AlO 4 will cause an increase in the voids of the glass, which is beneficial to improving the ion exchange efficiency and endowing the glass material with excellent chemical strengthening characteristics. However, too high contents of SiO 2 and Al 2 O 3 will inevitably cause an increase in the melting temperature and viscosity, imposing a heavy burden on the glass melting and clarification processes. B 2 O 3 is a glass-forming oxide. In silicate glass, B can partially replace Si to form a network structure. In addition, B 2 O 3 has a fluxing effect in the glass, which can reduce the high-temperature viscosity of the glass, save costs, and facilitate production. In the present invention, the combination of the three at specific contents can reduce structural defects, adjust the thermal expansion coefficient, help improve optical transparency and structural stability, and enhance processing performance and mechanical strength. Therefore, in the high-strength impact-resistant optoelectronic glass material of the present invention, by mass percentage, the content range of SiO 2 is 50 - 60%, the content range of Al 2 O 3 is 12 - 18%, and the content range of B 2 O 3 is 1 - 5%.

[0012] In some embodiments of the present invention, by mass percentage, SiO 2The content can be selected from the following ranges or values ​​in the following ranges: 50-52%, 50-52.5%, 50-51.8%, 50-51.5%, 50-51%, 50-50.8%, 50-54%, 50-57%, 50-58%, 50-60%, 52-54%, 52-57%, 52-58%, 52-60%, 54-57%, 54-58%, 50-60%, 52-60%, 54-60%, 57.9-60%, 59.8-60%, 57-58%, 57-60%, 58-60%, and the like.

[0013] In some embodiments of the present invention, Al 2 O 3 The content can be selected from the following ranges or values ​​in the following ranges: 12-12.9%, 12-12.8%, 12-12.6%, 12-12.5%, 12-12.3%, 12-13%, 12-14%, 12-15%, 12-16%, 12-18%, 13-16%, 13-18%, 16-18%, 15-16%, 13-15%, 14-15%, 15-18%, and the like.

[0014] In some embodiments of the present invention, in terms of mass percentage, B 2 O 3 The content can be selected from the following ranges or values ​​in the following ranges: 1-1.5%, 1-1.8%, 1-1.9%, 1-2%, 1-2.4%, 1-2.5%, 1-3%, 1-5%, 2-2.5%, 2-3%, 2-5%, 2.5-3%, 2.5-5%, 3-5%, and the like.

[0015] In some embodiments of the present invention, SiO 2 、Al 2 O 3 and B 2 O 3 The sum of the contents of the three components is not higher than 78%. In some optional embodiments, the sum of the contents of the three components is controlled at 63-78%. In a preferred embodiment, the sum of the contents of the three components is controlled at less than 70% or more than 65%. For example, in some embodiments, the sum of the contents of the three components can be 63-77.5%, 63-77%, 63-73%, 63-70%, 63-69%, 63-65%, 65-77.5%, 65-73.8% or 75-77.5%.

[0016] In some embodiments of the present invention, B 2 O 3 The content of SiO 2 and Al2 O 3 The total content is 1.4 - 8%, preferably 1.6 - 8%, more preferably 1.4 - 2.7%, 1.6 - 2.7% or 3.3 - 8%.

[0017] Bi 2 O 3 is an important additive. Bi 2 O 3 can be reduced to the metallic state of bismuth, i.e., black bismuth, under a high-temperature reducing atmosphere. Based on the component design and physical and chemical treatment of the present invention, the reduction of bismuth can be locally controlled outside the effective light transmission region of the glass, so as to in-situ react to generate a light absorption layer with high light absorption ability on the glass substrate. This layer can effectively absorb the stray light passing through the glass and reduce the halo effect. Therefore, in the high-strength impact-resistant optoelectronic glass material of the present invention, by mass percentage, the content range of Bi 2 O 3 is in the range of 0.1 - 5%.

[0018] In some embodiments of the present invention, by mass percentage, the content of Bi 2 O 3 can be selected from the following ranges or values within the following ranges: 0.1 - 0.2%, 0.1 - 1%, 0.1 - 2%, 0.1 - 3%, 0.1 - 4%, 0.1 - 5%, 0.2 - 1%, 0.2 - 2%, 0.2 - 3%, 0.2 - 4%, 0.2 - 5%, 1 - 2%, 1 - 3%, 1 - 4%, 1 - 5%, 2 - 3%, 2 - 4%, 2 - 5%, 2.1 - 3%, 2.5 - 3%, 2.8 - 3%, 3 - 4%, 3 - 4.9%, 3 - 4.6%, 3 - 4.3%, 3 - 4%, 3 - 3.9%, 3 - 3.5%, 3 - 3.3%, 3 - 5%, 4 - 5%, etc.

[0019] Li 2 O, Na 2 O and K 2 O are network modifier oxides of the glass. Alkali metal ions are easy to move and diffuse in the vitreous body, which can reduce the viscosity of the glass during high-temperature melting, making the glass easy to melt and being good fluxes. However, if their content is too high, it will affect the chemical stability of the glass and have a series of effects on the forming process. In addition, Li + and Na + ions are necessary ion-exchange components. In Li 2 O and Na 2In the case of co-introduction of O, the two-step chemical strengthening is beneficial to forming a relatively deep depth of ion exchange (DOL) and surface compressive stress (CS). Thus, the strengthened optoelectronic glass has higher strength and impact resistance. Therefore, in the high-strength and impact-resistant optoelectronic glass material of the present invention, by mass percentage, Li 2 O has a content range of 1-5%, Na 2 O has a content range of 10-16%, and K 2 O has a content range of 0-1%.

[0020] In some embodiments of the present invention, by mass percentage, the content of Li 2 O can be selected from the following ranges or values within the following ranges: 1-1.7%, 1-2.9%, 1-3.5%, 1-4%, 1-5%, 1.7-2.9%, 1.7-3.5%, 1.7-4%, 1.7-5%, 2.9-3.5%, 2.9-4%, 2.9-5%, 3.5-4%, 3.5-5%, 3.6-5%, 3.8-5%, 4-5%, 4.1-5%, 4.5-5%, 4.6-5%, 4.8-5%, and so on.

[0021] In some embodiments of the present invention, by mass percentage, the content of Na 2 O can be selected from the following ranges or values within the following ranges: 10-12%, 10-13%, 10-14%, 10-14.5%, 10-16%, 12-13%, 12-14%, 12-14.5%, 12-16%, 13-14%, 13-14.5%, 13-16%, 14-14.5%, 14-16%, 14.5-16%, 14.6-16%, 14.8-16%, 15-16%, 15.3-16%, 15.6-16%, 15.8-16%, and so on.

[0022] In some embodiments of the present invention, by mass percentage, the content of K 2 O can be selected from the following ranges or values within the following ranges: 0, 0-0.1%, 0-0.2%, 0-0.3%, 0-0.4%, 0-0.5%, 0.6-1%, 0.7-1%, 0.8-1%, 0.9-1%, 0-1%, 0.1-0.5%, 0.1-1%, 0.5-1%, and so on.

[0023] In some embodiments of the present invention, by mass percentage, Li 2 O, Na 2 O, and K 2The sum of the contents of O is not higher than 21%, preferably 13.5 - 21%, more preferably 19.6 - 21%, 20 - 21% or 14 - 19%.

[0024] In some embodiments of the present invention, Li 2 O accounts for Na 2 O and K 2 The proportion of the sum of the contents of O is not less than 8%. Preferably, Li 2 O accounts for Na 2 O and K 2 The proportion of the sum of the contents of O is 12 - 32%. More preferably, Li 2 O accounts for Na 2 O and K 2 The proportion of the sum of the contents of O is 22 - 32%, and most preferably 30 - 32%.

[0025] ZrO 2 is a glass intermediate oxide, which has the effect of improving chemical stability and preventing the exposure of alkali metal and alkaline earth metal ions. It is also an important component for increasing the tensile elastic modulus and is very helpful for improving the hardness after chemical strengthening of the glass. Therefore, in the high-strength and impact-resistant optoelectronic glass material of the present invention, by mass percentage, the content range of ZrO 2 is in the range of 1 - 7%.

[0026] In some embodiments of the present invention, by mass percentage, the content of ZrO 2 can be selected from the following ranges or values within the following ranges: 1 - 2%, 1 - 3%, 1 - 4%, 1 - 5%, 1 - 7%, 2 - 3%, 2 - 4%, 2 - 5%, 2 - 7%, 3 - 4%, 3 - 5%, 3 - 7%, 3.1 - 5%, 3.6 - 5%, 4 - 5%, 4 - 7%, 4.1 - 5%, 4.3 - 5%, 4.6 - 5%, 4.8 - 5%, 5 - 5.5%, 5 - 6%, 5 - 6.5%, 5 - 6.9%, 5 - 7%, etc.

[0027] MgO and CaO are alkaline earth metal oxides. The addition of alkaline earth metal oxides will greatly reduce the phase separation tendency of the glass. At the same time, adding MgO to the alkali aluminosilicate glass has a network-breaking and fluxing effect on the glass and does not cause a substantial breakage of the network. It can promote the formation of multi-membered rings in the network structure, including three-membered rings, four-membered rings, five-membered rings, and six-membered rings, etc., which not only satisfies the integrity of the glass connection but also is beneficial to creating voids between glass structure units to create an exchange channel for ion exchange and is beneficial to increasing the depth of the compressive stress layer (DOL) after chemical strengthening, thereby increasing the bending strength and overall impact resistance of the glass. Therefore, in the high-strength and impact-resistant optoelectronic glass material of the present invention, by mass percentage, the content range of MgO is in the range of 1 - 4%, and the content range of CaO is in the range of 1 - 3%.

[0028] In some embodiments of the present invention, by mass percentage, the content of MgO can be selected from the following ranges or values within the following ranges: 1-1.5%, 1-2%, 1-3%, 1-4%, 1.5-2%, 1.5-3%, 1.5-4%, 1.6-2%, 1.8-2%, 2-2.9%, 2-2.6%, 2-2.3%, 2-3%, 2-4%, 3-4%, and so on.

[0029] In some embodiments of the present invention, by mass percentage, the content of CaO can be selected from the following ranges or values within the following ranges: 1-2%, 1-2.5%, 1-3%, 2-2.5%, 2-3%, 2.5-3%, 2.6-3%, 2.7-3%, 2.8-3%, and so on.

[0030] CeO 2 and Sb 2 O 3 are used as glass fining agents. CeO 2 is a variable-valence oxide. It mainly removes bubbles from the glass melt through the effects at two different temperature ranges: being reduced (losing oxygen) at high temperatures and being oxidized (gaining oxygen) at low temperatures. The process of releasing oxygen by decomposition at high temperatures will increase the gas partial pressure in the bubbles, causing the bubble volume to increase, thereby accelerating the rise of bubbles and their removal from the molten glass. In addition, the released oxygen can also participate in the oxidation reactions in the molten glass, helping to eliminate some impurities with strong reducibility and improving the optical properties and chemical stability of the glass. Sb 2 O 3 in the glass can remove or reduce impurities in the glass through its redox ability, and at the same time has the effect of inhibiting bubble formation, thereby improving the transparency and purity of the glass. Therefore, in the high-strength impact-resistant optoelectronic glass material of the present invention, by mass percentage, the content range of CeO 2 is 0.1-3%, and the content range of Sb 2 O 3 is 0-2%.

[0031] In some embodiments of the present invention, by mass percentage, CeO 2The content can be selected from the following ranges or values within the following ranges: 0.1 - 0.2%, 0.1 - 0.5%, 0.1 - 1%, 0.1 - 2%, 0.1 - 3%, 0.2 - 0.5%, 0.2 - 1%, 0.2 - 2%, 0.2 - 3%, 0.3 - 0.5%, 0.3 - 1%, 0.4 - 0.5%, 0.4 - 1%, 0.5 - 1%, 0.5 - 2%, 0.5 - 3%, 0.6 - 1%, 0.7 - 1%, 0.8 - 1%, 0.9 - 1%, 1 - 1.9%, 1 - 1.8%, 1 - 1.6%, 1 - 1.5%, 1 - 1.4%, 1 - 1.3%, 1 - 1.2%, 1 - 2%, 1 - 3%, 2 - 3%, and so on.

[0032] In some embodiments of the present invention, in terms of mass percentage, Sb 2 O 3 The content can be selected from the following ranges or values within the following ranges: 0, 0 - 1%, 0 - 1.5%, 0 - 2%, 1 - 1.5%, 1.5 - 2%, 1.6 - 2%, 1.7 - 2%, 1.8 - 2%, 1.9 - 2%, 1 - 2%, 1.1 - 2%, 1.2 - 2%, 1.3 - 2%, 1.4 - 2%, 1.5 - 2%, 1.6 - 2%, 1.7 - 2%, 1.8 - 2%, and so on.

[0033] In some embodiments of the present invention, CeO 2 and Sb 2 O 3 The sum of the contents is not less than 1%, preferably 1.1 - 4%, more preferably 2 - 4%, 2.5 - 4% or 3 - 4%.

[0034] In some embodiments of the present invention, CeO 2 and Bi 2 O 3 The sum of the contents is not less than 1%, preferably 1.2 - 5.2%, more preferably 2.1 - 5%, 2.1 - 4.5, 2.5 - 5%, 2.5 - 4.5%, 2.5 - 4% or 3 - 4%.

[0035] In a second aspect, a high-strength and impact-resistant optoelectronic glass blank is provided, which is made of the glass composition described in the first aspect above.

[0036] In some embodiments, the optoelectronic glass blank has excellent spectral transmittance, and the spectral transmittance in the effective region is ≥ 91.00% @ 870 nm.

[0037] In some embodiments, the optoelectronic glass blank has a high baking temperature resistance, and the softening point temperature is ≥ 750 °C.

[0038] In some embodiments, the glass material has good chemical strengthening characteristics. After chemical strengthening, the surface compressive stress (CS) ≥ 1000 MPa, and the depth of the compressive stress layer (DOL) ≥ 80.00 μm. After chemical strengthening, the bending strength of the glass material ≥ 210 MPa. After chemical strengthening, the anti-drop ball impact height ≥ 1.5 m.

[0039] In a third aspect of the present invention, a high-strength and impact-resistant optoelectronic glass material is provided, which includes a light-transmitting glass substrate and a light absorption layer.

[0040] Wherein, the light absorption layer covers a part of the surface of the light-transmitting glass substrate, dividing the surface of the light-transmitting glass substrate into a low light-transmitting area and at least one light-transmitting effective area. The light-transmitting effective area does not cover the light absorption layer and allows target light to pass through, and the low light-transmitting area covers the light absorption layer to absorb or block the target light.

[0041] Wherein, the light-transmitting glass substrate has the composition of the glass composition as described in the first aspect above, or is made of the optoelectronic glass blank as described in the second aspect above, such as obtained by mechanical processing.

[0042] In an embodiment of the present invention, the light absorption layer is obtained by performing a reduction treatment on the light-transmitting glass substrate.

[0043] The reduction treatment is carried out in a reducing atmosphere. The time of the reduction treatment is 3000 - 18000 min, the pressure is 0.01 - 0.45 MPa, and the temperature is 550 - 680 °C.

[0044] The mechanical processing described in the present invention includes operations such as grinding, polishing, precision carving, chamfering, and cutting, which are conventional mechanical processing operations. The purpose is to improve the surface quality of the glass to ensure the effect of subsequent reduction treatment, or to make the glass blank reach a specific shape and size to meet the requirements of specific applications and ensure the convenience of subsequent processing and use. For example, through grinding and polishing, etc., the glass surface becomes more balanced and smooth, or through cutting, etc., the glass reaches the expected size and shape.

[0045] In an embodiment of the present invention, the spectral transmittance of the light-transmitting effective area to 870 nm light ≥ 91.00%.

[0046] In an embodiment of the present invention, the spectral transmittance of the low light-transmitting area to 870 nm light ≤ 2%.

[0047] In an embodiment of the present invention, the softening point temperature of the optoelectronic glass material ≥ 750 °C.

[0048] In an embodiment of the present invention, after chemical strengthening, the surface compressive stress (CS) of the optoelectronic glass material ≥ 1000 MPa, and the depth of the compressive stress layer (DOL) ≥ 80.00 μm.

[0049] In an embodiment of the present invention, the bending strength of the optoelectronic glass material after chemical strengthening is ≥210 MPa.

[0050] In an embodiment of the present invention, the height of the optoelectronic glass material against falling ball impact after chemical strengthening is ≥1.5 m.

[0051] In an embodiment of the present invention, the chemical strengthening includes putting the optoelectronic glass material into a salt bath for at least one chemical ion exchange, and the salt bath used for the ion exchange is selected from at least one molten salt of lithium salt, sodium salt and potassium salt.

[0052] In some embodiments of the present invention, the temperature for each chemical ion exchange is 380 - 550 °C, and the time is 60 - 600 min.

[0053] For example, in some embodiments, the chemical strengthening is carried out with two chemical ion exchanges. Among them, the first one is carried out in a salt bath of sodium salt, and the second one is carried out in a salt bath of potassium salt or a mixed salt of potassium salt and sodium salt.

[0054] The chemical strengthening may or may not add a catalyst to accelerate the chemical strengthening process; the addition amount of the catalyst is 0 - 10 wt% of the total mass of the salt bath. For example, the addition amount of the catalyst can be 4 - 10%, 5 - 10%, 6 - 10%, 7 - 10%, 4 - 7%, 4 - 5%, 4 - 6%, 4%, 5%, 6%, 7% or 10% of the total mass of the bath salt. The catalyst is selected from one or more of KOH, K 2 CO 3 , Rb 2 CO 3 , KH 2 PO 4 , Ca(PO 3 ) 2 , K 3 PO 4 and K 2 SO 4 in one or more of them, preferably KOH, K 2 CO 3 or K 2 SO 4 .

[0055] In some embodiments of the present invention, it is possible to choose to add or not add a catalyst during each chemical ion exchange. For example, when carrying out two chemical ion exchanges, it is possible to choose not to add a catalyst both times, or to add a catalyst both times, and it is also possible to add a catalyst at least once in the two times.

[0056] Fourthly, a method for preparing the high-strength impact-resistant optoelectronic glass material described in the third aspect above is provided, which includes:

[0057] Taking an optoelectronic glass blank and performing machining to obtain a light-transmitting glass substrate; the optoelectronic glass blank is made of the optoelectronic glass composition described in the first aspect above or as described in the second aspect above; the machining in the present invention includes operations such as grinding, polishing, precision carving, chamfering, cutting and other conventional machining operations, the purpose of which is to improve the surface quality of the glass to ensure the effect of subsequent reduction treatment, or to make the glass blank reach a specific shape and size to meet the requirements of specific applications and ensure the convenience of subsequent processing and use. Therefore, appropriate machining means can be selected according to the needs of subsequent operations. For example, through grinding and polishing, etc., the glass surface becomes more flat and smooth, or through cutting, etc., the glass reaches the expected size and shape;

[0058] Performing a reduction treatment on the light-transmitting glass substrate to form a light absorption layer on its surface;

[0059] Performing a surface treatment on the light absorption layer so that at least one light-transmitting effective area is formed on the glass surface to obtain the optoelectronic glass material.

[0060] Continuing to perform chemical strengthening treatment on the optoelectronic glass material can obtain a chemically strengthened optoelectronic glass material.

[0061] Among them, the method for preparing the optoelectronic glass blank includes: mixing the raw materials, melting at a high temperature of 1540 - 1600 °C, performing mechanical stirring after melting, assisting in bubbling and clarification, then cooling to 1380 - 1500 °C for molding, and annealing at 500 - 580 °C after molding to obtain the optoelectronic glass blank.

[0062] In some embodiments, the raw materials can also be selected from the following materials as needed: quartz sand, bismuth oxide (or bismuth nitrate pentahydrate), lithium carbonate, sodium carbonate (or sodium nitrate), potassium carbonate (or potassium nitrate), boron oxide (or boric acid), aluminum hydroxide (or aluminum oxide), zirconium oxide, magnesium oxide (or basic magnesium carbonate), calcium oxide (or calcium carbonate), cerium oxide and arsenic trioxide.

[0063] In some embodiments, the reduction treatment is carried out in a reducing atmosphere, the time of the reduction treatment is 3000 - 18000 min, the pressure is 0.01 - 0.45 MPa, and the temperature is 550 - 680 °C;

[0064] In some embodiments, the chemical strengthening includes putting the optoelectronic glass material into a salt bath for at least one chemical ion exchange, and the salt bath used for the ion exchange is selected from at least one molten salt of lithium salt, sodium salt and potassium salt.

[0065] In some embodiments, the temperature for each chemical ion exchange is 380 - 550 °C, and the time is 60 - 600 min.

[0066] For example, in some embodiments, the chemical strengthening is carried out by two chemical ion exchanges, wherein the first is carried out in a salt bath of sodium salt, and the second is carried out in a salt bath of potassium salt or a mixed salt of potassium salt and sodium salt.

[0067] The chemical strengthening may or may not add a catalyst to accelerate the chemical strengthening process; the addition amount of the catalyst is 0 - 10 wt% of the total mass of the salt bath. For example, the addition amount of the catalyst can be 4 - 10%, 5 - 10%, 6 - 10%, 7 - 10%, 4 - 7%, 4 - 5%, 4 - 6%, 4%, 5%, 6%, 7% or 10% of the total mass of the bath salt. The catalyst is selected from one or more of KOH, KCl, K 2 CO 3 , Rb 2 CO 3 , KH 2 PO 4 , Ca(PO 3 ) 2 , K 3 PO 4 and K 2 SO 4 , and preferably is one or more of KOH, K 2 CO 3 or K 2 SO 4 .

[0068] Fifthly, an optical element is provided, which is made of the high-strength impact-resistant optoelectronic glass material composition described in the first aspect above, or the optoelectronic glass blank described in the second aspect above, or contains the high-strength impact-resistant optoelectronic glass material described in the third aspect above. In some embodiments of the present invention, the optical element is a display screen.

[0069] Sixthly, a glass cover plate is provided, which is made of the high-strength impact-resistant optoelectronic glass material composition described in the first aspect above, or the optoelectronic glass blank described in the second aspect above, or contains the high-strength impact-resistant optoelectronic glass material described in the third aspect above.

[0070] In addition, an electronic device is provided, the material of the protective cover plate of which is the high-strength impact-resistant optoelectronic glass material described in the third aspect above.

[0071] In a seventh aspect, there is provided an application of the high-strength impact-resistant optoelectronic glass material composition described in the first aspect above, or the optoelectronic glass blank described in the second aspect above, or the high-strength impact-resistant optoelectronic glass material described in the third aspect above, in the fields of display screens and protective covers. Among them, the display screens and protective covers are applied in fields such as smart phones, tablet computers, laptop computers, smart watches, vehicle-mounted applications, public inquiry systems, ATMs, song and dish ordering systems, industrial control, and medical treatment.

[0072] The beneficial effects of the present invention are as follows:

[0073] A high-strength impact-resistant optoelectronic glass material provided by the present invention has excellent spectral transmittance, the spectral transmittance in the effective area ≥ 91.00% @ 870 nm, good anti-halos and anti-crosstalk performance, the transmittance of the light absorption layer ≤ 2% @ 870 nm, a relatively high baking temperature resistance, the softening point temperature ≥ 750 °C, good chemical strengthening characteristics, the surface compressive stress (CS) ≥ 1000 MPa after chemical strengthening, the depth of the compressive stress layer (DOL) ≥ 80.00 μm, the bending strength of the glass material ≥ 210 MPa after chemical strengthening, the anti-drop ball impact height ≥ 1.5 m, and the chemical strengthening treatment basically does not affect the spectral transmittance and softening point temperature of the glass. It can be used to prepare display screens and protective covers, and plays an important role in aspects such as smart phones, tablet computers, laptop computers, smart watches, vehicle-mounted applications, public inquiry systems, ATMs, song and dish ordering systems, industrial control, and medical treatment. Description of the Drawings

[0074] The specification drawings forming a part of this application are used to provide a further understanding of this application. The schematic embodiments of this application and their descriptions are used to explain this application and do not constitute an improper limitation of this application. Hereinafter, the implementation embodiments of this application will be described in detail in conjunction with the drawings, where:

[0075] Figure 1 A comparison chart showing the transmittance (@870 nm) of the light transmission effective area of the optoelectronic glass of Examples 1-6 and Comparative Examples 1-10 of the present invention and the light absorption layer (low light transmission area) formed after reduction treatment.

[0076] Figure 2 A comparison chart showing the numerical values of the bending strength and anti-drop ball impact height of the optoelectronic glass materials of Examples 1-6 and Comparative Examples 1-10 of the present invention after chemical strengthening. Detailed Embodiments

[0077] The present application will be further described below in conjunction with specific embodiments. It should be understood that these embodiments are only used to illustrate the present application and not to limit the scope of the present application. The experimental methods without specific conditions noted in the following embodiments are generally in accordance with conventional conditions or conditions recommended by the manufacturer.

[0078] Unless otherwise defined, all professional and scientific terms used herein have the same meaning as those familiar to those skilled in the art. The reagents or raw materials used in the present application can be obtained through conventional channels. Unless otherwise specified, the reagents or raw materials used in the present application are used in accordance with the conventional methods in the art or in accordance with the product instructions. In addition, any methods and materials similar or equivalent to the described content can be applied to the methods of the present application. The preferred implementation methods and materials described herein are for illustrative purposes only.

[0079] The present invention provides a high-strength and impact-resistant optoelectronic glass material, which comprises a light-transmitting glass matrix and a light-absorbing layer.

[0080] Among them, the light-absorbing layer covers a part of the surface of the light-transmitting glass matrix, dividing the surface of the light-transmitting glass matrix into a low-light-transmission area and at least one light-transmitting effective area. The light-transmitting effective area is not covered by the light-absorbing layer and allows the target light to pass through. The low-light-transmission area covers the light-absorbing layer to absorb or block the target light; the light-absorbing layer is obtained by performing a reduction treatment on the light-transmitting glass matrix.

[0081] Among them, the composition of the light-transmitting glass matrix, by mass percentage, includes or consists of the following components: 50-60% of SiO 2 、0.1-5% of Bi 2 O 3 、1-5% of Li 2 O、10-16% of Na 2 O、0-1% of K 2 O、1-5% of B 2 O 3 、12-18% of Al 2 O 3 、1-7% of ZrO 2 、1-4% of MgO、1-3% of CaO、0.1-3% of CeO 2 and 0-2% of Sb 2 O 3 .

[0082] In particular, when the glass material of the present invention is composed of the above components, the optoelectronic glass material of the present invention has excellent spectral transmittance, the spectral transmittance in the effective light transmission region is ≥91.00% @870 nm, has good anti-halo and anti-crosstalk performance, the transmittance of the light absorption layer is ≤2% @870 nm, has a high baking temperature resistance, the softening point temperature is ≥750 °C, and at the same time has good chemical strengthening characteristics. After chemical strengthening, the surface compressive stress (CS) is ≥1000 MPa, the depth of the compressive stress layer (DOL) is ≥80.00 μm, the bending strength of the glass material after chemical strengthening is ≥210 MPa, and the anti-drop ball impact height is ≥1.5 m. It can be used to prepare display screens and protective covers, and plays an important role in smart phones, tablet computers, laptop computers, smart watches, in-vehicle applications, public inquiry systems, ATM machines, song and dish ordering systems, industrial control, medical treatment, etc.

[0083] Furthermore, the present invention provides a method for preparing a high-strength and impact-resistant optoelectronic glass material, including:

[0084] After mixing the raw materials, melt them at a high temperature of 1540 - 1600 °C, perform mechanical stirring after melting, assist in bubbling and clarification, then cool down to 1380 - 1500 °C for forming, and anneal at 500 - 580 °C after forming to obtain an optoelectronic glass blank;

[0085] In some embodiments, the raw materials can also be selected from the following materials as needed: quartz sand, bismuth oxide (or bismuth nitrate pentahydrate), lithium carbonate, sodium carbonate (or sodium nitrate), potassium carbonate (or potassium nitrate), boron oxide (or boric acid), aluminum hydroxide (or aluminum oxide), zirconium oxide, magnesium oxide (or basic magnesium carbonate), calcium oxide (or calcium carbonate), cerium oxide, and white arsenic;

[0086] Perform mechanical processing on the optoelectronic glass blank to obtain a light-transmitting glass substrate, then perform a reduction treatment on the light-transmitting glass substrate to form a light absorption layer on its surface; perform surface treatment on the light absorption layer to expose at least one light-transmitting effective area on the glass surface so that the target light can pass through, to obtain an optoelectronic glass material;

[0087] Perform chemical strengthening treatment on the obtained optoelectronic glass material to obtain an optoelectronic glass material after chemical strengthening treatment.

[0088] Among them, the reduction treatment is carried out in a reducing atmosphere, the time of the reduction treatment is 3000 - 18000 min, the pressure is 0.01 - 0.45 MPa, and the temperature is 550 - 680 °C.

[0089] The chemical strengthening includes putting the glass into a salt bath for at least one chemical ion exchange, and the salt bath used for the ion exchange is selected from at least one molten salt of lithium salt, sodium salt and potassium salt; the temperature of the chemical strengthening is 380 - 550 °C, and the time is 60 - 600 min; preferably, the treatment method is to carry out two chemical ion exchanges, wherein the first one is carried out in a salt bath of sodium salt, and the second one is carried out in a salt bath of potassium salt or a mixed salt of potassium salt and sodium salt; the chemical strengthening can be carried out with or without adding a catalyst to accelerate the chemical strengthening process; the addition amount of the catalyst is 0 - 10 wt% of the total mass of the salt bath; the catalyst is selected from one or more of KOH, KCl, K 2 CO 3 , Rb 2 CO 3 , KH 2 PO 4 , Ca(PO 3 ) 2 , K 3 PO 4 , and K 2 SO 4 and one or more of them.

[0090] The above preparation method of the present invention has process stability, and the glass material prepared by this method can maintain its excellent performance characteristics. Specifically, within the process parameter range of the present invention (such as temperature, time, pressure, etc.), appropriately adjusting these parameters will not cause significant fluctuations in the glass performance, thus ensuring the consistency and reliability of the product. It should be noted that within the process parameter range disclosed in the present invention, appropriately increasing the temperature can accelerate the process, thereby shortening the preparation time. However, when choosing to operate at a higher temperature, those skilled in the art know that it is necessary to comprehensively consider the equipment capacity, energy consumption cost and the control of glass quality to ensure maintaining the excellent performance of the product while improving the production efficiency.

[0091] Performance test method or standard:

[0092] Use a Shimadzu ultraviolet-visible spectrophotometer (UV-3600Plus) to measure the transmittance of the glass sample, the test wavelength range is 300 nm - 1500 nm, the surface of the tested glass sample is optically polished, and the thickness of the test sample is 2 mm. (GB / T7962.12 - 2010).

[0093] The softening point temperature of the glass sample was tested using a Model PPV-1000 / 1200 flat plate viscometer produced by Orton Corporation. Sample preparation: The glass sample was ground into a cylindrical glass bar with a diameter of Φ6×6 mm, and both end faces were made parallel. The sample was placed between the top and bottom discs, which were made of heat-resistant metal alloy, with a diameter of 44 mm and a thickness of 6 mm. The top metal disc was connected to the bottom of the probe rod. Two very thin platinum films (with a diameter of 40 mm and a thickness of 0.001 inches) were placed between the sample and the top and bottom discs to facilitate sampling and sample placement. (ASTM C-1351M)

[0094] The stress of the chemically strengthened glass was tested using an FSM600-LE surface stress meter. By setting the refractive index and photoelastic coefficient parameters according to different glasses, the compressive stress (CS) and the depth of the compressive stress layer (DOL) on the surface of different glasses can be directly obtained. Principle of the surface stress meter measurement: After ion exchange, a stress layer is generated in the glass, resulting in different refractive indices between the glass surface and the interior, causing the photoelastic effect to produce birefringence.

[0095] An optical microscope was used to observe and measure the thickness of the light absorption layer formed after the reduction treatment.

[0096] A three-point bending testing machine was used to determine the bending strength of the glass sample. The processed dimensions of the sample were 3 mm×4 mm×40 mm. The four long sides of the tested glass sample were optically polished, and the long edges were chamfered. The end surfaces of the test samples did not require special treatment. (GB / T 6569-2006)

[0097] An impact resistance test was carried out using a MK-9968 model 2000 mm falling ball impact testing machine produced by Dongguan Kemai Instrument Equipment Co., Ltd., and the specified mass of the steel ball was 60 g. Sample preparation: The glass sample was ground and polished into a disc with a diameter of Φ23.1×0.6 mm, and both end faces were kept parallel. (GB / T 39814-2021)

[0098] Specifically, the following examples and comparative examples of the present invention prepared optoelectronic glass blanks according to the above method and further processed them into optoelectronic glass and chemically strengthened optoelectronic glass. Among them, the compositions of the optoelectronic glass samples in Examples 1-6 and Comparative Examples 1-10 are shown in Tables 1 and 2.

[0099] The parameters of the preparation processes (including the blank preparation process, reduction treatment process, and chemical strengthening process) of the glass samples in Examples 1-6 and Comparative Examples 1-10 of the present invention are shown in Table 3.

[0100] The properties of the glass samples in Examples 1-6 and Comparative Examples 1-10 of the present invention are shown in Tables 4 and 5.

[0101] In addition, using the composition shown in Embodiment 5 of the present invention, an optoelectronic glass with a light absorption layer is obtained by processing according to the preparation process and reduction process of the optoelectronic glass blank in Table 3, and then different chemical strengthening treatment processes (see Table 6) are used to chemically strengthen the optoelectronic glass, and the mechanical properties of the glass samples after chemical strengthening are investigated, and the results are shown in Table 7.

[0102] According to the experimental results of the present invention, the optoelectronic glass prepared in the embodiments of the present invention has a high spectral transmittance and good anti-halo and anti-crosstalk performance. The spectral transmittance of the effective light transmission region is ≥91.00% @ 870 nm, and the spectral transmittance of the absorption layer (low light transmission region) is ≤2% 870 nm; it has a high baking resistance temperature, and its softening point temperature is ≥750 °C; at the same time, the optoelectronic glass in the embodiments of the present invention has excellent chemical strengthening characteristics. After chemical strengthening, the surface compressive stress (CS) ≥1000 MPa, the depth of the compressive stress layer (DOL) ≥80.00 μm, the flexural strength after chemical strengthening ≥210 MPa, and the anti-drop ball impact height after chemical strengthening ≥1.5 m. In addition, the chemical strengthening treatment basically does not affect the spectral transmittance and softening point temperature of the optoelectronic glass of the present invention.

[0103] Table 1 Composition of glass samples in Examples 1-6

[0104]

[0105]

[0106] Table 2 Composition of glass samples in Comparative Examples 1-10

[0107]

[0108] Table 3 Preparation process of glass samples in Examples 1-6 and Comparative Examples 1-10

[0109]

[0110]

[0111] Table 4 Performance test results of glass samples in Examples 1-7

[0112]

[0113] Table 5 Performance test results of glass samples in Comparative Examples 1-10

[0114]

[0115]

[0116] Table 6 Chemical strengthening process parameters

[0117]

[0118] Table 7 Performance test results of glass samples for Processes 1 - 10

[0119]

[0120]

[0121] The above are only the preferred embodiments of the present invention and are not intended to limit the present invention. For those skilled in the art, the present invention may have various changes and modifications. Any modification, equivalent replacement, improvement, etc. made within the spirit and principle of the present invention shall be included within the protection scope of the present invention.

Claims

1. A high-strength and impact-resistant photovoltaic glass material composition, characterized in that: In terms of mass percentage, it contains the following components: 50-60% SiO2, 0.1-5% Bi2O3, 1-5% Li2O, 10-16% Na2O, 0-1% K2O, 1-5% B2O3, 12-18% Al2O3, 1-7% ZrO2, 1-4% MgO, 1-3% CaO, 0.1-3% CeO2 and 0-2% Sb2O3.

2. The high-strength and impact-resistant photovoltaic glass material composition according to claim 1, characterized in that: In terms of mass percentage, its composition includes: 50-57% SiO2, 0.1-5% Bi2O3, 1-5% Li2O, 10-16% Na2O, 0-1% K2O, 1-5% B2O3, 12-18% Al2O3, 1-7% ZrO2, 1-4% MgO, 1-3% CaO, 1-3% CeO2 and 0-2% Sb2O3; Preferably, the composition comprises, by mass percentage, 50-57% SiO2, 0.1-3% Bi2O3, 2-5% Li2O, 10-16% Na2O, 0-1% K2O, 1-5% B2O3, 12-18% Al2O3, 1-7% ZrO2, 1-4% MgO, 1-3% CaO, 1-3% CeO2 and 1-2% Sb2O3; Preferably, the composition comprises, by mass percentage, 50-57% SiO2, 1-3% Bi2O3, 3.5-5% Li2O, 10-16% Na2O, 0-1% K2O, 1-3% B2O3, 12-18% Al2O3, 1-5% ZrO2, 1-4% MgO, 1-3% CaO, 1-3% CeO2 and 1-2% Sb2O3; Preferably, its composition includes, by mass percentage, 50-57% SiO2, 1-3% Bi2O3, 3.5-5% Li2O, 10-16% Na2O, 0 or 0.6-1% K2O, 1-2.5% B2O3, 12-18% Al2O3, 1-7% ZrO2, 1-2% MgO, 1-3% CaO, 1-3% CeO2 and 1-2% Sb2O3.

3. A high-strength and impact-resistant photovoltaic glass material composition according to claim 1 or 2, characterized in that: In terms of mass percentage, the content of SiO2 is 50-57%, preferably 50-54%, and more preferably 50-51.9%; Preferably, the content of Bi2O3 is 0.1-4%, preferably 1-4%, more preferably 1-3% by mass percentage; Preferably, the content of Li2O is 1.7-5%, preferably 2.9-5%, more preferably 3.5-5%, by mass percentage; Preferably, the content of Na2O is 14.6-16% by mass; Preferably, the content of K2O is 0 or 0.1-1% or 0-0.4% by mass percentage; Preferably, the content of B2O3 is 1-4%, preferably 1-3%, more preferably 1-2.5% by mass; Preferably, the content of Al2O3 is 12-16% by mass, preferably 12-15%; Preferably, the content of ZrO2 is 1-6%, preferably 1-5%, preferably 4-5%, by mass percentage; Preferably, the content of MgO is 1-3% by mass, preferably 1-2%; Preferably, the content of CaO is 2-3% by mass, preferably 2.5-3%; Preferably, the content of CeO2 is 0.5-3%, preferably 1-3% or 0.5-1%, preferably 1-2%% by mass; Preferably, in terms of mass percentage, the content of Sb2O3 is 0 or 0.1-2%, preferably 1-2%, and more preferably 1.5-2%.

4. A glass blank, which is made of the glass composition according to any one of claims 1 to 3; Preferably, the method for preparing the glass blank comprises: The raw materials are mixed and melted at a high temperature of 1540-1600°C, mechanically stirred after melting, and clarified by bubbling, and then cooled to 1380-1500°C for molding, and annealed at 500-580°C after molding to obtain the photoelectric glass blank; preferably, the softening point temperature of the photoelectric glass blank is ≥750°C; Preferably, the spectral transmittance of the photoelectric glass blank to 870nm light is ≥91.00%; Preferably, the softening point temperature of the photovoltaic glass blank is ≥750°C.

5. A high-strength and impact-resistant optoelectronic glass material, comprising a light-transmitting glass substrate and a light-absorbing layer; in, The light absorbing layer covers part of the surface of the light-transmitting glass substrate, dividing the surface of the light-transmitting glass substrate into a low light-transmitting area and at least one light-transmitting effective area; wherein the light-transmitting effective area is not covered with the light absorbing layer, allowing the target light to pass through; and the low light-transmitting area is covered with the light absorbing layer to absorb or block the target light; The light-transmitting glass substrate has a composition of the glass composition as claimed in any one of claims 1 to 3, or is made of the glass blank as claimed in claim 4; Preferably, the light absorbing layer is obtained by reducing a light-transmitting glass substrate; Preferably, the reduction treatment is carried out in a reducing atmosphere, the time of the reduction treatment is 3000-18000 min, the pressure is 0.01-0.45 MPa, and the temperature is 550-680°C.

6. The high-strength and impact-resistant optoelectronic glass material according to claim 5, characterized in that: The spectral transmittance of the light-transmitting effective area to 870nm light is ≥91.00%; Preferably, the spectral transmittance of the low light transmittance region to 870nm light is ≤2%; Preferably, the softening point temperature of the photovoltaic glass material is ≥750°C; Preferably, the surface compressive stress (CS) of the photovoltaic glass material after chemical strengthening is ≥1000MPa, and the depth of the compressive stress layer (DOL) is ≥80.00μm; Preferably, the bending strength of the photovoltaic glass material after chemical strengthening is ≥210MPa; Preferably, the photoelectric glass material has a drop ball impact resistance height of ≥1.5m after chemical strengthening; Preferably, the chemical strengthening comprises placing the photovoltaic glass material in a salt bath for at least one chemical ion exchange, wherein the salt bath used for the ion exchange is selected from at least one molten salt of lithium salt, sodium salt and potassium salt; Preferably, the temperature during each chemical ion exchange is 380-550°C and the time is 60-600 min; Preferably, the chemical strengthening is performed by two chemical ion exchanges, wherein the first one is performed in a salt bath of sodium salt, and the second one is performed in a salt bath of potassium salt or a mixed salt of potassium salt and sodium salt; Preferably, the chemical strengthening may or may not include a catalyst to accelerate the chemical strengthening process; Preferably, the catalyst is added in an amount of 0-10 wt% of the total mass of the salt bath; Preferably, the catalyst is selected from one or more of KOH, KCl, K2CO3, Rb2CO3, KH2PO4, Ca(PO3)2, K3PO4 and K2SO4.

7. A method for preparing the high-strength and impact-resistant optoelectronic glass material according to claim 5 or 6, comprising: Preparing a glass blank from the glass composition according to any one of claims 1 to 3 or using the glass blank according to claim 4; Mechanically processing the glass blank to obtain a light-transmitting glass substrate; Performing reduction treatment on the light-transmitting glass substrate to form a light-absorbing layer on the surface thereof; The light absorbing layer is subjected to surface treatment so that the glass surface has at least one light-transmitting effective area, thereby obtaining a photoelectric glass material; Preferably, the optoelectronic glass material is chemically strengthened to obtain a chemically strengthened optoelectronic glass material; Preferably, the reduction treatment is carried out in a reducing atmosphere, the time of the reduction treatment is 3000-18000 min, the pressure is 0.01-0.45 MPa, and the temperature is 550-680° C.; Preferably, the chemical strengthening comprises placing the glass in a salt bath for at least one chemical ion exchange, wherein the salt bath used for the ion exchange is selected from at least one molten salt of lithium salt, sodium salt and potassium salt; the temperature of the chemical strengthening is 380-550° C., and the time is 60-600 min; Preferably, the chemical strengthening is performed by two chemical ion exchanges, wherein the first one is performed in a salt bath of sodium salt, and the second one is performed in a salt bath of potassium salt or a mixed salt of potassium salt and sodium salt; Preferably, the chemical strengthening may or may not include a catalyst to accelerate the chemical strengthening process; Preferably, the catalyst is added in an amount of 0-10wt% of the total mass of the salt bath; Preferably, the catalyst is selected from one or more of KOH, KCl, K2CO3, Rb2CO3, KH2PO4, Ca(PO3)2, K3PO4 and K2SO4.

8. An optical element, characterized in that: Made of the high-strength and impact-resistant photovoltaic glass material composition according to any one of claims 1 to 3 or the glass blank according to claim 4, or containing the high-strength and impact-resistant photovoltaic glass material according to claim 5 or 6; Preferably, the optical element is a display screen.

9. A glass cover plate, characterized in that: The invention is made of the high-strength and impact-resistant photovoltaic glass material composition according to any one of claims 1 to 3 or the photovoltaic glass blank according to claim 4, or contains the high-strength and impact-resistant photovoltaic glass material according to claim 5 or 6.

10. Use of the high-strength and impact-resistant optoelectronic glass material composition according to any one of claims 1 to 3, or the optoelectronic glass blank according to claim 4, or the high-strength and impact-resistant optoelectronic glass material according to claims 5 to 6 in the field of display screens and protective cover plates; Preferably, the display screen and the protective cover are used in smart phones, tablet computers, laptop computers, smart watches, vehicle-mounted applications, public inquiry systems, ATM machines, song and food ordering systems, industrial control and medical fields.

Images