Frequency-adjustable high-power pulse signal generation circuit based on micro-nano plasma switch

Abstract

The invention belongs to the technical field of micro-nano plasma switches and radio frequency and power circuits, and particularly relates to a frequency-adjustable high-power pulse signal generation circuit based on a micro-nano plasma switch, which comprises a sinusoidal signal generation module, a tuning module and a micro-nano plasma switch module, the sinusoidal signal generation module comprises an NMOS cross coupling pair, a PMOS cross coupling pair and an LC resonant cavity. The tuning module comprises a capacitor array and a frequency tuning module. A micro-nano plasma switch is used for realizing large-current transmission and is matched with a sine wave signal to generate a specific pulse signal. An inductor and a variable capacitor are introduced into the LC resonant cavity and the frequency tuning unit, and the capacitance value is adjusted by changing the end voltage of the capacitor, so that the circuit outputs a pulse signal of which the frequency covers a low frequency band to a terahertz frequency band under the control of different voltages. The pulse signal generated by the circuit has the characteristics of high power, picosecond-level rising edge and different repetition frequencies, and is suitable for terahertz communication, radar and other systems.

Description

Technical Field

[0001] The present invention belongs to the technical fields of micro-nano plasma switches and radio frequency and power circuits, and particularly relates to an adjustable frequency high-power pulse signal generation circuit based on a micro-nano plasma switch. Background Art

[0002] High-speed and high-frequency devices are the core components of important electronic information systems such as high-speed large-capacity communications and pulsed radars. However, it is very challenging to achieve both high power and high-speed high-frequency performance simultaneously. Conventional silicon (Si)-based transistors and III-V compound semiconductors, such as gallium arsenide (GaAs), indium arsenide (InAs), and indium phosphide (InP) transistors, are affected by factors such as lattice scattering, resulting in limited carrier transport speeds. Moreover, there is a contradiction between carrier density and mobility, making it extremely difficult to increase the maximum output power while increasing the maximum operating frequency.

[0003] A micro-nano plasma switch is a switch device based on a brand-new principle, featuring a simple structure with a nano-micron-level air gap between its anode and cathode. Under the action of a high electric field, electrons generated by field emission on the cathode surface strike the air within the electrode gap, generating high-density plasma and achieving rapid conduction between the anode and cathode. Based on this principle, this device can output high-power signals in a high-frequency state, without being restricted by the Johnson figure of merit. Its turn-on speed is much greater than 1 V / ps, and the theoretical switch speed is several picoseconds, meaning its instantaneous bandwidth can reach THz. Given the unique advantages demonstrated by the micro-nano plasma switch, it is of great significance and urgency to study an adjustable frequency high-power pulse signal generation circuit based on a micro-nano plasma switch. Summary of the Invention

[0004] The purpose of the present invention is to provide an adjustable frequency high-power pulse signal generation circuit based on a micro-nano plasma switch. Under different voltage controls, this circuit can output pulse signals with high power, picosecond-level rise times, and different repetition frequencies, and is particularly suitable for terahertz communications, radars, and time-domain reflectometry systems that require high-power and high-frequency pulse signals.

[0005] To achieve the above objective, the present invention adopts the following technical solutions:

[0006] An adjustable frequency high-power pulse signal generation circuit based on a micro-nano plasma switch includes a sine signal generation module, a tuning module, and a micro-nano plasma switch module;

[0007] The sine signal generation module includes an LC resonator, a PMOS cross-coupled pair, and an NMOS cross-coupled pair. The LC resonator is used to generate a sine signal. The PMOS cross-coupling is used to provide a negative resistance for maintaining oscillation to the LC resonator. The NMOS cross-coupled pair is used to provide a negative resistance for canceling the parasitic resistance of the LC resonator.

[0008] The tuning module is composed of a capacitor array and a frequency tuning unit, and is used to adjust the frequency of the sine signal to reach the required frequency.

[0009] The micro-nano plasma switch module receives the sine signal output by the tuning module and generates a pulse signal with a picosecond-level rising edge and a power peak > 50W according to the sine signal.

[0010] Further, the PMOS cross-coupled pair includes a fourth PMOS transistor M4 and a fifth PMOS transistor M5. The gate of the fourth MOS transistor M4 is connected to the drain of the fifth PMOS transistor M5, the drain is connected to the gate of the fifth PMOS transistor M5, and the source is commonly connected to the source of the fifth PMOS transistor M5 and then connected to the power supply VDD.

[0011] Further, the NMOS cross-coupled pair includes a first MOS transistor M1, a second MOS transistor M2, a first resistor R1, a second resistor R2, a first capacitor C3, and a second capacitor C4; where:

[0012] The gate of the first NMOS transistor M1 is connected to the drain of the second NMOS transistor M2 through the capacitor C4; the drain is connected to the drain of the fourth PMOS transistor M4, and the source is connected to an external bias circuit.

[0013] The gate of the second NMOS transistor M2 is connected to the drain of the first MOS transistor M1 through the second capacitor C3; the drain is connected to the drain of the fifth PMOS transistor M5, and the source is connected to an external bias circuit.

[0014] One end of the resistor R1 is connected to one end of the resistor R2 and then connected to the bias voltage Vbias2, and the other end of the resistor R1 is connected between the gate of the first NMOS transistor M1 and the capacitor C3.

[0015] The other end of the resistor R2 is connected between the gate of the second MOS transistor M2 and the capacitor C4.

[0016] Further, the LC resonator includes a first varactor VAR1, a second varactor VAR2, and an inductor L1. After the first varactor VAR1 and the second varactor VAR2 are connected in series, they are then connected in parallel with the inductor L1; the inductor L1 is respectively connected in parallel with the NMOS cross-coupled pair and the PMOS cross-coupled pair.

[0017] Further, the capacitor array is respectively connected in parallel with the NMOS cross-coupled pair and the PMOS cross-coupled pair.

[0018] Further, the frequency tuning unit is composed of a first capacitor C1, a second capacitor C2, a third resistor R3, a fourth resistor R4, a third varactor VAR3, and a fourth varactor VAR4, where: one end of the first capacitor C1 is connected between the drain of the first NMOS transistor M1 and the drain of the fourth PMOS transistor M4; the other end is sequentially connected to one end of the second capacitor C2 after passing through the third varactor VAR3 and the fourth varactor VAR4;

[0019] The other end of the second capacitor C2 is connected between the drain of the second NMOS transistor M2 and the drain of the fifth PMOS transistor M5,

[0020] One end of the third resistor R3 is connected to one end of the resistor R4 and then connected to the bias voltage Vbias1, and the other end is connected between the first capacitor C1 and the third varactor VAR3; the other end of the resistor R4 is connected between the second capacitor C2 and the fourth varactor VAR4.

[0021] Further, the micro-nano plasma switch module includes a micro-nano plasma switch P1 and a fifth resistor R5,

[0022] One end of the micro-nano plasma switch P1 is connected between the drain of the first NMOS transistor M1 and the drain of the fourth PMOS transistor M4, and the other end is connected to one end of the fifth resistor R5. The other end of the fifth resistor (R5) is between the drain of the second NMOS transistor M2 and the drain of the fifth PMOS transistor M5. Further, the micro-nano plasma switch includes a substrate, and at least two separated electrodes are provided on the substrate, and gaps are formed between the electrodes to form an air channel.

[0023] The basic working principle and process of an adjustable frequency high-power pulse signal generation circuit based on a micro-nano plasma switch proposed by the present invention are as follows:

[0024] When the externally applied voltage of the micro-nano plasma switch reaches the threshold voltage, electrons are generated by field emission on the electrode surface. These electrons strike the air in the air channel, generating high-density plasma. This plasma serves as a low-resistance conductive channel for high-speed electron transport, enabling rapid conduction between the electrodes (the switching speed far exceeds 1 V / ps). However, since avalanche breakdown occurs during this process, as the duration of the externally applied voltage increases, the impact of carriers on the electrode becomes more intense, thereby damaging the electrode. The oscillator can convert direct current into a sinusoidal voltage with a specific frequency oscillation, and the amplitude of this sinusoidal voltage can reach the threshold voltage of the micro-nano plasma switch. Based on this, the present invention utilizes a voltage-controlled oscillator to generate a sinusoidal signal with a wide oscillation frequency range (from low frequency to millimeter wave and even terahertz band). When the amplitude of the sinusoidal signal reaches the threshold voltage of the micro-nano plasma switch, plasma is rapidly generated in the air channel, causing the anode and cathode to conduct, and capable of transmitting a current of more than milliamperes within a picosecond time scale, enabling the circuit to generate a high-frequency and high-power signal (the frequency can reach the terahertz band, power > 50 W). When the amplitude of the sinusoidal signal decreases, the charged particles in the plasma recombine, and the micro-nano plasma switch closes and returns to the open circuit state. The rapidly changing sinusoidal voltage can reduce the damage degree of the plasma to the electrode, thereby continuously exciting the micro-nano plasma switch to generate plasma and realizing the conduction of the micro-nano plasma switch. In addition, the resonance frequency of the entire circuit is determined by the inductance value and capacitance value. By changing the voltage across the variable capacitor, the capacitance value of the capacitor is changed to make the resonance frequency of the circuit reach the terahertz band.

[0025] After adopting the above technical solutions, the present invention has the following advantages:

[0026] 1. By introducing an inductor and a variable capacitor into the LC resonance cavity and the frequency tuning unit, the present invention adjusts the capacitance value of the capacitor by changing the voltage across the variable capacitor, realizing that the circuit outputs pulse signals with different frequencies under the control of different voltages, and the frequency range covers from low frequency to terahertz band. Cooperating with the frequency tuning module to achieve precise adjustment of the frequency of the pulse signal within a smaller range, generating a terahertz band pulse signal with an adjustable oscillation frequency.

[0027] 2. Realize the transmission of a current of more than milliamperes through the micro-nano plasma switch, and cooperate it with the sinusoidal wave signal generated by the LC oscillation resonance cavity, thereby generating a pulse signal with the following characteristics: the power peak > 50 W, the repetition frequency range from low frequency to terahertz band, and the rising edge reaches the picosecond level (< 10 ps).

[0028] 3. The adjustable frequency and high-power pulse signal generation circuit of the present invention can not only be built using discrete devices, but also be compatible with planar manufacturing technology, and can be prepared using semiconductor micro-nano processes to achieve on-chip integration. Brief Description of the Drawings

[0029] Figure 1 It is a circuit diagram of an adjustable - frequency high - power pulse signal generation circuit based on a micro - nano plasma switch;

[0030] Figure 2 It is a cross - sectional view of the micro - nano plasma switch used in the embodiment; where: 1 is the first electrode of the micro - nano plasma switch, 2 is the second electrode of the micro - nano plasma switch; 3 is the substrate of the micro - nano plasma switch;

[0031] Figure 3 It is a top - view of the micro - nano plasma switch;

[0032] Figure 4 It is the volt - ampere characteristic curve of the micro - nano plasma switch under the action of an applied voltage;

[0033] Figure 5 It is a relationship diagram between the threshold voltage of the micro - nano plasma switch and the size of the anode - cathode gap;

[0034] Figure 6 It is the output voltage waveform of the adjustable - frequency high - power pulse signal generation circuit in the embodiment when the micro - nano plasma switch module is not connected;

[0035] Figure 7 It is the simulation result of the output voltage waveform of the adjustable - frequency high - power pulse signal generation circuit in the embodiment when the output repetition frequency is 100 GHz. Detailed implementation manners

[0036] The technical solutions in the present invention will be further described below in conjunction with the drawings and embodiments. It should be particularly noted that in the following descriptions, when the detailed descriptions of known functions and designs may dilute the main content of the present invention, these descriptions will be omitted here.

[0037] Before elaborating in detail on a simulation matching method for multi - pulse measured gamma energy spectra based on a pulsed neutron instrument provided by the present invention, the principle of the present invention will be expounded first.

[0038] The micro - nano plasma switch is the core component of the adjustable - frequency high - power pulse signal generation circuit in this embodiment, and its structure is as shown in Figure 2 and Figure 3As shown in the figure, it includes a substrate, and two electrode plates with a gap set on the substrate. The two electrode plates are the anode and the cathode respectively. The micro-nano plasma switch electrodes used in this embodiment are made of conductive materials, such as metals or doped semiconductors, and can be manufactured by planar manufacturing processes. The width of the gap is in the nanometer or micrometer range. Under the action of a high electric field, electrons are generated by field emission on the cathode surface of the micro-nano plasma switch. These electrons collide with the air in the electrode gap, and then generate a high-density plasma, realizing rapid conduction between the anode and the cathode. Therefore, this switch can output high-power signals at terahertz frequency bands, its turn-on speed far exceeds 1 V / ps, the theoretical switch speed reaches several picoseconds, and it is usually applied to high-power and high-frequency fields.

[0039] The properties of the micro-nano plasma switch are as Figure 4 shown. As the applied voltage increases, the current generated by field emission gradually enters the saturation state, and then the micro-nano plasma switch enters the pre-breakdown state until avalanche breakdown occurs. The voltage at this time is called the threshold voltage Vth of the switch. The threshold voltage Vth is defined as the voltage when the micro-nano plasma switch enters the conduction state during avalanche breakdown. Figure 5 is a relationship diagram between the threshold voltage Vth of the micro-nano plasma switch and the size of the anode-cathode gap. It can be seen from Figure 5 that the micro-nano plasma switch has the characteristic that for different gap sizes, the physical mechanisms for the formation of plasma in the air channel are different. The gap size between the micro-nano plasma electrodes is between 5 nanometers and 7 micrometers. Electrons are generated by field emission and collide with the air to form plasma. When the gap size is greater than 7 micrometers, plasma is generated through the Townsend avalanche effect.

[0040] In view of the above situation of the micro-nano plasma switch, in this embodiment, a sinusoidal voltage is generated by a voltage-controlled oscillator, which has the characteristics of a wide oscillation frequency range (covering low frequencies to millimeter waves and even terahertz frequency bands). However, due to the parasitic resistance of the inductance and capacitance in the circuit, energy conversion between the inductance and capacitance will cause losses, resulting in the oscillation being unable to be continuously maintained. To solve this problem, a cross-coupled pair composed of NMOS is used to provide a negative resistance to offset the parasitic resistance in the inductance and capacitance, so that the circuit can continuously oscillate.

[0041] Based on the above principle, an adjustable-frequency high-power pulse signal generation circuit based on a micro-nano plasma switch provided in this embodiment has a structure as Figure 1 shown, including a sine signal generation module, a tuning module, and a micro-nano plasma switch module. The sine signal generation module includes an NMOS cross-coupled pair, a PMOS cross-coupled pair, and an LC resonator. The tuning module includes a capacitor array and a frequency tuning module. The components and connection relationships of each module are as follows:

[0042] The PMOS cross-coupled pair includes a fourth PMOS transistor M4 and a fifth PMOS transistor M5. The gate of the fourth MOS transistor M4 is connected to the drain of the fifth PMOS transistor M5, the drain is connected to the gate of the fifth PMOS transistor M5, and the source is connected to the source of the fifth PMOS transistor M5 and then connected to the power supply VDD.

[0043] The NMOS cross-coupled pair includes a first MOS transistor M1, a second MOS transistor M2, a first resistor R1, a second resistor R2, a first capacitor C3, and a second capacitor C4. The gate of the first NMOS transistor M1 is connected to the drain of the second NMOS transistor M2 through the capacitor C4; the drain is connected to the drain of the fourth PMOS transistor M4, and the source is connected to an external bias circuit; the gate of the second NMOS transistor M2 is connected to the drain of the first MOS transistor M1 through the second capacitor C3; the drain is connected to the drain of the fifth PMOS transistor M5, and the source is connected to an external bias circuit; one end of the resistor R1 is connected to one end of the resistor R2 and then connected to the bias voltage Vbias2, and the other end of the resistor R1 is connected between the gate of the first NMOS transistor M1 and the capacitor C3; the other end of the resistor R2 is connected between the gate of the second MOS transistor M2 and the capacitor C4.

[0044] The LC resonator includes a first varactor VAR1, a second varactor VAR2, and an inductor L1. After the first varactor VAR1 and the second varactor VAR2 are connected in series, they are then connected in parallel with the inductor L1; the inductor L1 is connected in parallel with the NMOS cross-coupled pair and the PMOS cross-coupled pair respectively.

[0045] The capacitor array is connected in parallel with the NMOS cross-coupled pair and the PMOS cross-coupled pair respectively.

[0046] The frequency tuning unit is composed of a first capacitor C1, a second capacitor C2, a third resistor R3, a fourth resistor R4, a third varactor VAR3, and a fourth varactor VAR4. Among them: one end of the first capacitor C1 is connected between the drain of the first NMOS transistor M1 and the drain of the fourth PMOS transistor M4; the other end is sequentially connected to the third varactor VAR3 and the fourth varactor VAR4 and then connected to one end of the second capacitor C2; the other end of the second capacitor C2 is connected between the drain of the second NMOS transistor M2 and the drain of the fifth PMOS transistor M5. One end of the third resistor R3 is connected to one end of the fourth resistor R4 and then connected to the bias voltage Vbias1, and the other end is connected between the first capacitor C1 and the third varactor VAR3; the other end of the resistor R4 is connected between the second capacitor C2 and the fourth varactor VAR4.

[0047] The micro-nano plasma switch module includes a micro-nano plasma switch P1 and a fifth resistor R5. One end of the micro-nano plasma switch P1 is connected between the drain of the first NMOS transistor M1 and the drain of the fourth PMOS transistor M4, and the other end is connected to one end of the fifth resistor R5. The other end of the fifth resistor (R5) is between the drain of the second NMOS transistor M2 and the drain of the fifth PMOS transistor M5.

[0048] The micro-nano plasma switch includes a substrate, on which at least two separated electrodes are provided, and gaps are formed between the electrodes to constitute an air channel.

[0049] The external bias circuit in this embodiment consists of an NMOS transistor M3. The drain of the NMOS transistor M3 is connected between the source of the first NMOS transistor M1 and the source of the second NMOS transistor M1, the gate is connected to the bias voltage Vbias3, and the source is grounded. The NMOS transistor M3 provides a working current for the whole circuit to ensure that the circuit can start to oscillate at the beginning.

[0050] When the LC resonator is in the class C operating state, in this embodiment, by adding blocking capacitors C3 and C4, and resistors R1 and R2 at the drains of the first NMOS transistor M1 and the second NMOS transistor M1 in the NMOS cross-coupled pair, the bias voltage is depressed. When the NMOS enters the class C operating state, the corresponding PMOS cross-coupled pair will also enter the class C operating state. Compared with the oscillator using only the NMOS or PMOS structure, the cross-coupled structure using the combination of NMOS and PMOS in this embodiment has significant advantages: it can provide the same negative resistance with only half of the current consumption to maintain oscillation.

[0051] In addition, since the thermal noise and flicker noise of the MOS transistors themselves in the circuit and the thermal noise introduced by the parasitic resistors will affect the output of the voltage-controlled oscillator, which in turn causes phase noise and jitter. Therefore, a capacitor C5 is connected in parallel at the common-mode node of the circuit to form a filter to reduce the thermal noise. One end of the capacitor C5 is connected to the source of the first NMOS transistor M1, the drain of the NMOS transistor M3, and the source of the second NMOS transistor M2, and the other end is grounded. By introducing the capacitor C5, on the one hand, the harmonic thermal noise is filtered out, and on the other hand, the thermal noise of part of the tail current source is suppressed, reducing the distortion of the oscillation waveform.

[0052] Figure 6 The output voltage waveform of the tunable frequency high-power pulse signal generation circuit in the embodiment when the micro-nano plasma switch module is not connected. At this time, the output voltage waveform is a sine signal. Figure 7 The simulation result of the output voltage waveform of the tunable frequency high-power pulse signal generation circuit in the embodiment when the output frequency is 100 GHz. Figure 7It can be seen that when the output voltage of the oscillator exceeds the threshold voltage Vth of the micro-nano plasma switch, the switch conducts, releasing the energy in the oscillator to the load R5, realizing the generation of pulse signals, and indicating that the performance of the pulse signals depends on the combined action of the micro-nano plasma switch and the LC resonant cavity.

[0053] In summary, the adjustable-frequency high-power pulse signal generation circuit of the present invention utilizes the characteristics of ultrafast electron generation and low-resistance transport of the micro-nano plasma switch, and can output high-power (>50W), picosecond-level rise time (<10ps) and high-frequency (>100GHz) pulse signals, which are suitable for electronic information systems such as terahertz communication, pulsed radar, and high-speed time-domain measurement. At the same time, the micro-nano plasma switch realizes milliampere-level current transmission and cooperates with the sine wave signal of the LC oscillation resonant cavity to generate specific pulse signals. In the LC resonant cavity and the frequency tuning unit, by introducing inductors and variable capacitors and changing the capacitance value by adjusting the voltage at the capacitor terminals, the circuit can output pulse signals with frequencies covering the low-frequency to terahertz frequency bands, having high power and picosecond-level rise time and different repetition frequencies under different voltage controls, meeting the requirements of terahertz communication, radar and other systems for high-frequency and high-power signals.

[0054] The above embodiments are only illustrative of the principles and effects of the present invention, and are not intended to limit the present invention. Any person familiar with this technology can modify or change the above embodiments without departing from the spirit and scope of the present invention. Therefore, all equivalent modifications or changes made by those with ordinary knowledge in the technical field without departing from the spirit and technical ideas disclosed by the present invention should still be covered by the claims of the present invention.

Claims

1. An adjustable - frequency high - power pulse signal generation circuit based on a micro - nano plasma switch, comprising a sine signal generation module, a tuning module, and a micro - nano plasma switch module, characterized in that: The sine signal generation module includes an LC resonator, a PMOS cross - coupled pair, and an NMOS cross - coupled pair. The LC resonator is used to generate a sine signal. The PMOS cross - coupling is used to provide a negative resistance for the LC resonator to maintain oscillation. The NMOS cross - coupled pair is used to provide a negative resistance to cancel the parasitic resistance of the LC resonator; The tuning module is composed of a capacitor array and a frequency tuning unit, and is used to adjust the frequency of the sine signal to reach the required frequency; The micro - nano plasma switch module receives the sine signal output by the tuning module and generates a pulse signal according to the sine signal. The pulse signal is a pulse signal with a picosecond - level rising edge and a power peak greater than 50W.

2. The adjustable frequency high-power pulse signal generation circuit based on a micro-nano plasma switch according to claim 1, wherein: The PMOS cross - coupled pair includes a fourth PMOS transistor M4 and a fifth PMOS transistor M5. The gate of the fourth MOS transistor M4 is connected to the drain of the fifth PMOS transistor M5, the drain is connected to the gate of the fifth PMOS transistor M5, and the source is commonly connected to the source of the fifth PMOS transistor M5 and then connected to the power supply VDD.

3. The adjustable frequency high-power pulse signal generation circuit based on a micro-nano plasma switch according to claim 2, wherein: The NMOS cross - coupled pair includes a first MOS transistor M1, a second MOS transistor M2, a first resistor R1, a second resistor R2, a first capacitor C3, and a second capacitor C4; where: The gate of the first NMOS transistor M1 is connected to the drain of the second NMOS transistor M2 through the capacitor C4; the drain is connected to the drain of the fourth PMOS transistor M4, and the source is connected to an external bias circuit; The gate of the second NMOS transistor M2 is connected to the drain of the first MOS transistor M1 through the second capacitor C3; the drain is connected to the drain of the fifth PMOS transistor M5, and the source is connected to an external bias circuit; One end of the resistor R1 is connected to one end of the resistor R2 and then connected to the bias voltage Vbias2. The other end of the resistor R1 is connected between the gate of the first NMOS transistor M1 and the capacitor C3; The other end of the resistor R2 is connected between the gate of the second MOS transistor M2 and the capacitor C4.

4. An adjustable frequency high-power pulsed signal generation circuit based on a micro-nano plasma switch according to claim 3, characterized in that: The LC resonator includes a first varactor VAR1, a second varactor VAR2, and an inductor L1. After the first varactor VAR1 and the second varactor VAR2 are connected in series, they are then connected in parallel with the inductor L1; the inductor L1 is respectively connected in parallel with the NMOS cross - coupled pair and the PMOS cross - coupled pair.

5. An adjustable-frequency high-power pulse signal generation circuit based on a micro-nano plasma switch according to claim 4, characterized in that: The capacitor array is respectively connected in parallel with the NMOS cross - coupled pair and the PMOS cross - coupled pair.

6. The adjustable frequency high-power pulse signal generation circuit based on a micro-nano plasma switch according to claim 5, wherein: The frequency tuning unit is composed of a first capacitor C1, a second capacitor C2, a third resistor R3, a fourth resistor R4, a third varactor VAR3, and a fourth varactor VAR4. Where: one end of the first capacitor C1 is connected between the drain of the first NMOS transistor M1 and the drain of the fourth PMOS transistor M4; the other end is sequentially connected through the third varactor VAR3 and the fourth varactor VAR4 and then connected to one end of the second capacitor C2; The other end of the second capacitor C2 is connected between the drain of the second NMOS transistor M2 and the drain of the fifth PMOS transistor M5. One end of the third resistor R3 is connected to one end of the fourth resistor R4 and then connected to the bias voltage Vbias1, and the other end is connected between the first capacitor C1 and the third varactor VAR3; the other end of the resistor R4 is connected between the second capacitor C2 and the fourth varactor VAR4.

7. The adjustable frequency high-power pulse signal generation circuit based on a micro-nano plasma switch according to claim 6, characterized in that: The micro-nano plasma switch module includes a micro-nano plasma switch P1 and a fifth resistor R5. One end of the micro-nano plasma switch P1 is connected between the drain of the first NMOS transistor M1 and the drain of the fourth PMOS transistor M4, and the other end is connected to one end of the fifth resistor R5. The other end of the fifth resistor (R5) is between the drain of the second NMOS transistor M2 and the drain of the fifth PMOS transistor M5.

8. An adjustable frequency high-power pulse signal generation circuit based on a micro-nano plasma switch according to claim 1, characterized in that: The micro-nano plasma switch includes a substrate, and at least two mutually separated electrodes are provided on the substrate. A gap is formed between the electrodes to form an air channel.

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