Anti-crosstalk light-emitting unit and manufacturing method thereof

Abstract

The invention relates to the technical field of semiconductor display devices, in particular to an anti-crosstalk light-emitting unit and a manufacturing method thereof, and a color filter layer, a color conversion layer, an inorganic layer, a chip bonding layer, a micro light-emitting diode layer and a reflecting layer are sequentially manufactured on a substrate from bottom to top; manufacturing a discontinuous filling layer on the surface of the reflecting layer; and grinding, thinning, cutting and splitting the substrate to form an independent discrete device. By arranging the reflecting layer covering the packaging structure and the discontinuous chip bonding layer, light emitted by the quantum dots and the micro light-emitting diodes is reflected by the reflecting layer, light crosstalk between the display units is avoided, the reflected light excites the quantum dots again to emit light, and the light efficiency is improved. The chip bonding layer and the filling and leveling layer are arranged discontinuously, so that substrate warping caused by temperature rise and fall during large-size manufacturing is avoided. When cutting and splitting are carried out, the laser technology frequency can be reduced, the mass production efficiency can be improved, and the organic layer is removed, so that the occurrence of the double-cell problem of the chip can be greatly avoided.

Description

Technical Field

[0001] The present invention relates to the technical field of semiconductor display devices, and particularly relates to an anti-crosstalk light-emitting unit and a manufacturing method thereof. Background Art

[0002] Micro Light Emitting Diode Display (Micro LED Display, abbreviated as Micro LED), micro light-emitting diodes have characteristics such as high brightness, high reliability, and self-luminescence, and have great application prospects. However, due to the immaturity of the industrial chain, there are currently problems such as low yield, high cost, and difficulty in commercialization.

[0003] In traditional technologies, blue micro light-emitting diodes and quantum dots are separately prepared, and usually a viscous organic adhesive is used to integrate the LED and the quantum dots. In the prior art, most use a whole-surface organic material bonding method to mix quantum dots and micro light-emitting diodes in a packaging solution to solve the problems in the application of micro light-emitting diodes.

[0004] However, during the process of manufacturing a large-sized wafer, the product is prone to warping and deformation due to temperature effects, the cutting process is complex, the mass production feasibility is low, and the yield rate is low.

[0005] Based on the problems in the prior art, the present invention provides an anti-crosstalk light-emitting unit and a manufacturing method thereof. Summary of the Invention

[0006] The object of the present invention is to provide an anti-crosstalk light-emitting unit and a manufacturing method thereof, so as to solve the technical problems in the prior art that when manufacturing large-sized products, the conventional micro light-emitting diode packaging structure is prone to deformation inside due to temperature effects, the yield rate is low, and the packaging structure is not conducive to efficient cutting, resulting in low mass production feasibility of the product.

[0007] The technical solution of the present invention is: A manufacturing method of an anti-crosstalk light-emitting unit, comprising: Successively fabricating a color filter layer and a color conversion layer on a substrate from bottom to top; fabricating a continuous inorganic layer on the surface of the color filter layer that is not covered, as well as on the surface and sides of the color conversion layer; fabricating a discontinuous chip bonding layer on the inorganic layer; transferring and fabricating a blue micro light-emitting diode layer on the chip bonding layer, the positive projection area of the micro light-emitting diode layer being no larger than that of the chip bonding layer; fabricating a reflective layer on the surface and sides of the inorganic layer that are not covered, on the surface and sides of the exposed chip bonding layer, and on the surface and sides of the exposed micro light-emitting diode layer; fabricating a discontinuous filling layer on the surface of the reflective layer; performing operations including grinding and thinning, laser cutting, and splitting on the substrate to form independent discrete devices.

[0008] Preferably, the electrode part of the micro light-emitting diode layer exposes the planarizing layer to fabricate an extended electrode. The exposed surface of the micro light-emitting diode layer is covered by a reflective layer except for the area used to fabricate the extended electrode, and the reflective layer is disposed under the extended electrode.

[0009] Preferably, the chip bonding layer corresponds to the color conversion layer, and the orthographic projection of the chip bonding layer falls within the area where the color conversion layer is located. The orthographic projection of the micro light-emitting diode layer falls within the area where the chip bonding layer is located; the thickness of the chip bonding layer is not greater than 2 .

[0010] Preferably, the planarizing layer is made of an organic material, including a photolithographic polyimide material or an acrylic photoresist material; It fills and covers the surface of the reflective layer and is disconnected on the surface of the micro light-emitting diode to form a discontinuous covering-filling structure; and the maximum width of the planarizing layer is not less than the width of the color filter layer.

[0011] Preferably, at least one group of light-emitting units is fabricated synchronously on a substrate, and one group of light-emitting units includes one display unit or three display units; When performing laser cutting, one display unit or three display units form a group, and the connection part between adjacent light-emitting units is cut, disconnecting the reflective layer, the non-substrate layer and the substrate between adjacent units, and dividing the light-emitting units into discrete devices.

[0012] Preferably, the color filter layers of the three display units in each group of light-emitting units respectively correspond to a first yellow filter, a second yellow filter, and a blue filter; the three corresponding micro light-emitting diodes in each group of light-emitting units are independent and discontinuous from each other; On the top surfaces of the blue filter, the first yellow filter, and the second yellow filter of the color filter layer, a color conversion layer is fabricated by photolithography, corresponding to an RQD layer, a GQD layer, and a blank layer; Among them, the RQD layer and the GQD layer contain red and green quantum dot materials for color conversion, and the material of the blank layer does not contain quantum dot materials; The orthographic projections of the RQD layer, the GQD layer, and the blank layer fall within the areas where the corresponding blue filter, first yellow filter, and second yellow filter are located.

[0013] Preferably, the thickness of the color filter layer is 1-5 ; the thickness of the color conversion layer is 3-7 .

[0014] Preferably, the material of the inorganic layer includes one or a combination of SiO2, Al2O3, and TiO2; The thickness of the inorganic layer is 20-2000 nm.

[0015] Preferably, the reflective layer may be a DBR structure or a metal reflector, and the thickness of the reflective layer is set to 1-3 .

[0016] An anti-crosstalk light-emitting unit is manufactured by using the manufacturing method of the anti-crosstalk light-emitting unit, wherein a group of light-emitting units includes three display units; Each display unit includes, from bottom to top, a color filter layer, a color conversion layer, an inorganic layer, a chip bonding layer, a micro-LED layer, and a reflective layer; The orthographic projection of the color conversion layer falls within the region where the color filter layer is located; The inorganic layer continuously covers the exposed side of the color filter layer and the exposed side and surface of the color conversion layer; The chip bonding layer is discontinuous, corresponding to the color conversion layer of each display unit, and the orthographic projection of the chip bonding layer falls within the region where the color conversion layer is located, and the orthographic projection of the micro light emitting diode layer falls within the region where the chip bonding layer is located; Arranging electrodes on the surface of the micro-light-emitting diode layer and reserving an area for arranging an extended electrode; The filling layer fills and covers the surface of the reflective layer, including the gaps between adjacent display units, and is discontinuously arranged, at least disconnected at the position point of laser cutting.

[0017] The reflective layer covers all exposed surfaces and sides of the display unit, and the exposed surface of the micro-LED layer is covered by the reflective layer except for the area used to make the extended electrode, and the reflective layer is arranged under the extended electrode.

[0018] Compared with the prior art, the advantages of the present invention are: (1) The present invention provides a reflective layer covering the packaging structure and a discontinuous chip bonding layer, so that the reflective layer can go over the chip bonding layer and directly cover the surface of the color filter layer and the color conversion layer; except for the partial area on the surface of the micro-LED used to make the extended electrode, the entire area is covered by the reflective layer, and the reflective layer is provided under the extended electrode. Regardless of the light excited by the quantum dots or the light emitted by the micro-LED, it is reflected by the reflective layer to avoid optical crosstalk between display units, and the light reflected by the reflective layer can only be emitted from the light emitting side. The total energy loss after reflection is less than 10%, and the reflected light passes through the quantum dot area again to excite the quantum dots to emit light, thereby improving the light efficiency.

[0019] (2) Both the chip bonding layer and the filling layer are discontinuously set, which can reduce the substrate warping problem caused by temperature rise and fall during large-scale production.

[0020] (3)When the entire pixel process is completed, during laser cutting and chip splitting, since both the chip bonding layer and the planarization layer are discontinuous and there is no organic layer at the splitting position, the number of laser processes can be reduced, and the mass production efficiency can be improved. Moreover, removing the organic layer can greatly avoid the occurrence of chip twin problems and improve the product yield.

[0021] (4)The chip bonding layer is discontinuous, and the emission layer can cover the color filter layer, color conversion layer, encapsulation layer, micro light-emitting diode, and extended electrode, while improving the light efficiency and solving optical crosstalk, and is suitable for commercial mass production. Description of the Drawings

[0022] The present invention will be further described below in conjunction with the drawings and embodiments: Figure 1 It is a schematic cross-sectional structure diagram of manufacturing a color filter layer and a color conversion layer on the substrate of the present invention; Figure 2 It is a schematic cross-sectional structure diagram of arranging a continuous inorganic layer on the light conversion layer of the present invention; Figure 3 It is a schematic cross-sectional structure diagram of the chip bonding layer of the present invention; Figure 4 It is a schematic cross-sectional structure diagram of manufacturing a micro light-emitting diode on the chip bonding layer of the present invention; Figure 5 It is a schematic cross-sectional structure diagram of the reflection layer of the present invention; Figure 6 It is a schematic cross-sectional structure diagram of the planarization layer of the present invention; Figure 7 It is a schematic cross-sectional structure diagram of the light-emitting unit of the present invention including three display units; Figure 8 It is a schematic cross-sectional structure diagram of the light-emitting unit of the present invention including one display unit; Figure 9 It is a schematic cross-sectional structure diagram of the display unit of the present invention; Figure 10 It is a top view structure diagram of the display unit of the present invention; Figure 11 It is a schematic cross-sectional structure diagram of the light-emitting unit of the present invention; Figure 12 It is a schematic diagram of the visible light transmittance curve of different color filters of the present invention; Wherein: 100, substrate; 200, color filter layer; 300, color conversion layer; 400, inorganic layer; 500, chip bonding layer; 600, micro light-emitting diode layer; 700, reflection layer; 800, planarization layer; 900, extended electrode; 201. First yellow filter; 202. Second yellow filter; 203. Blue filter; 301. RQD layer; 302. GQD layer; 303. Blank layer; 601. First blue micro light-emitting diode; 602. Second blue micro light-emitting diode; 603. Third blue micro light-emitting diode. Detailed implementation mode

[0023] The following further elaborates on the content of the present invention in combination with specific embodiments: A manufacturing method of a crosstalk-proof light-emitting unit is as follows: Step 1: Fabricate a color filter layer 200 on a substrate 100 made of sapphire or glass.

[0024] The substrate 100 made of sapphire or glass is generally 4-6 inches in size and 300-1300 in thickness .

[0025] In one embodiment or other implementation manners, the color filter layer 200 is set as a combination of a red filter, a green filter, and a blue filter.

[0026] In another embodiment or other implementation manners, as shown in the appendix Figure 1 , the color filter layer 200 is set as a combination of a first yellow filter 201, a second yellow filter 202, and a blue filter 203. The thickness of the constructed color filter layer 200 is 1-5 .

[0027] Referring to the schematic diagram of the visible light transmittance curves of different filters provided in the appendix Figure 12 , it can be seen that the transmittance of the red / green / yellow filter to blue light (445-470 nm) < 1%. The transmittance of the red filter to red light > 80%. The transmittance of the green filter to green light > 80%, and the transmittance of the yellow filter to red light and green light > 80%.

[0028] Replacing the red filter and the green filter with a yellow filter can filter out the blue light that cannot be converted by quantum dots while ensuring the transmittance of red light or green light, thereby improving the color purity of the emitted light.

[0029] Step 2: Fabricate a color conversion layer 300 on the color filter layer 200.

[0030] On the first yellow filter 201, the second yellow filter 202, and the blue filter 203, separate and independent RQD layers 301 (red quantum dots, abbreviated as "RQD"), GQD layers 302 (green quantum dots, abbreviated as "GQD"), and blank layers 303 (Blank without quantum dots, abbreviated as "Blank layer") are fabricated by lithography respectively. The thickness of the color conversion layer 300 is 3 - 7 , and the fabrication results are shown in the attached Figure 2 .

[0031] Among them, the materials of the RQD layer 301 and the GQD layer 302 are both provided with red and green quantum dot materials for color conversion, while the material of the blank layer 303 (corresponding to the blue filter) does not contain quantum dot materials.

[0032] The downward orthographic projection areas of the RQD layer 301, the GQD layer 302, and the blank layer 303 are not greater than the top surface areas of the corresponding first yellow filter 201, second yellow filter 202, and blue filter 203 at the bottom.

[0033] Step Three: Fabricate the inorganic layer 400.

[0034] On the surfaces (including the front and side surfaces) of the color filter layer 200 and the color conversion layer 300, as well as the exposed surface of the substrate 100, the covering inorganic layer 400 is fabricated by CVD and ALD equipment. The material of the inorganic layer 400 includes one or several composite materials of SiO2, Al2O3, and TiO2, which plays a role in blocking water and oxygen. The inorganic layer 400 is an encapsulation layer, and the thickness of the inorganic layer 400 is 20 - 2000 nm.

[0035] Step Four: Fabricate the chip bonding layer 500.

[0036] On the inorganic layer 400, within the color filter layer 200 and the color conversion layer 300, the chip bonding layer 500 is fabricated, and the fabrication results are shown in the attached Figure 3 . The thickness of the chip bonding layer 500 is not greater than 2 .

[0037] The chip bonding layer 500 is set as an organic material, such as a photoresist, including a photolithographic polyimide material or an acrylic photoresist material. Through exposure and development, a discontinuous bonding layer is formed to cover the inorganic layer 400.

[0038] The orthographic projection area of the chip bonding layer 500 is not greater than the top surface area of the bottom color conversion layer 300.

[0039] Step Five: Transfer and fabricate the micro light-emitting diode layer 600 on the chip bonding layer 500.

[0040] The micro light-emitting diode layer 600 includes independent first blue micro light-emitting diodes 601, second blue micro light-emitting diodes 602, and third blue micro light-emitting diodes 603, which respectively correspond to the corresponding color filter layers 200 and color conversion layers 300 at the bottom. Refer to the attached Figure 4 As shown, the projected area of each blue micro light-emitting diode (micro light-emitting diode) is also not greater than the top surface area of the corresponding chip bonding layer 500 at the bottom.

[0041] Step Six: Fabricate the reflective layer 700.

[0042] Fabricate the reflective layer 700 on the exposed surfaces and sides of the inorganic layer 400, the exposed surfaces and sides of the chip bonding layer 500, and the exposed surfaces of the micro light-emitting diode layer 600.

[0043] Refer to the attached Figure 5 As shown, the reflective layer 700 is set to continuously cover the surface of the target structure; or the reflective layer 700 is discontinuously arranged and disconnected between adjacent display units (facilitating cutting into independent devices). Refer to the attached Figure 8 As shown.

[0044] Except for the area used to fabricate the extended electrode, the exposed surface of the micro light-emitting diode layer 600 is covered by the reflective layer 700, and the reflective layer 700 is arranged under the extended electrode.

[0045] The reflective layer 700 adopts a DBR structure (Distributed Bragg Reflector), and can be directly fabricated using a commercial DBR coating machine, with a thickness of 1 - 3 .

[0046] Using TiO2 / SiO2 as the repeating unit structure, the unit thickness of one TiO2 is 40 - 80 nm thick, the unit thickness of SiO2 is 70 - 140 nm, and repeating 5 - 20 pairs can achieve more than 99% light reflection.

[0047] The reflective layer 700 is set as a metal mirror, and the fabrication method is as follows: First, fabricate a SiO2 as insulation; second, fabricate a metal layer with a Ti and Al structure on the SiO2.

[0048] Ti is 1 - 5 nm, used to improve the adhesion of the SiO2 film surface; the thickness of the Al metal is 50 - 200 nm, used to reflect light. The SiO2 structure can be fabricated using CVD, and the metal can be fabricated using an electron beam evaporation device.

[0049] Step Seven: Fabricate a planarizing layer 800 on the surface of the reflective layer 700.

[0050] The material of the planarizing layer 800 is an organic material; generally, photo-lithographic polyimide material or acrylic photo-resist is used. Refer to the attached Figure 6 As shown, the planarizing layer 800 is in a discontinuous covering and filling form, covering and filling on the surface of the reflective layer, and exposing the electrode regions on the surfaces of each micro-light-emitting diode in the micro-light-emitting diode layer 600, facilitating the subsequent fabrication of the extended electrodes.

[0051] The planarizing layer 800 is mainly filled between adjacent display units. In addition to filling the gaps between adjacent display units, the planarizing layer 800 is also used to provide support for the extended electrodes 900. Generally, the area of the extended electrodes 900 is as large as possible to increase the area between the chip and the external PCB board for more stable connection. Therefore, the surface area of the planarizing layer 800 is as large as possible. In the specific implementation process of this embodiment, it is restricted that the maximum width of the cross-section of the planarizing layer 800 is not less than the width of the color filter layer 200.

[0052] Step Eight: Fabricate extended electrodes 900 on the surface of the planarizing layer 800.

[0053] Base electrodes are fabricated on the surfaces of each micro-light-emitting diode in the micro-light-emitting diode layer 600. Refer to the attached Figure 6 As shown (the blank parts in the micro-light-emitting diode regions in the figure), the electrodes are electrically connected to the micro-light-emitting diode layer 600. Based on the base electrodes, the electrodes are enlarged to fabricate the extended electrodes 900, facilitating the soldering between the chip and the PCB substrate.

[0054] Step Nine: Grind and thin the substrate.

[0055] The initial length dimension of the substrate is usually 4 - 6 inches, and the thickness is 300 - 1300 .

[0056] For example, all the process fabrications are carried out on a 4-inch sapphire substrate, and the original thickness of the sapphire is 600 - 700 , and the size of a single display unit of the final product is 80 - 400 . Therefore, after the hierarchical structure is fabricated, the sapphire substrate is thinned. The thinning is carried out by a grinding process, and the sapphire substrate is ground and thinned to 120 or less.

[0057] Step Ten: Laser cut to form independent devices.

[0058] Attach the thinned entire substrate 100 to a blue film. In one implementation, take three groups of display units as a whole and perform laser cutting. Refer to the attached Figure 11As shown, laser cutting is performed at any position between the dotted lines in the figure, cutting the inorganic layer 400 and the substrate (including the reflective layer 700 if the reflective layer 700 is continuously provided). In another embodiment, each display unit is cut as an independent device, the filling layer 800 between adjacent display units is not continuous, and the reflective layer 700 can be continuous or discontinuous. Refer to the appendix Figure 8 In the appendix, both the reflective layer 700 and the filling layer 800 between adjacent display units are not continuous.

[0059] After laser cutting, a conventional cleaving knife is used for cleavage, and finally individual discrete devices are formed. The manufacturing result of an independent light-emitting device is shown in the appendix Figure 7 as shown.

[0060] For the cutting operation, a laser is conventionally used. If there is only an inorganic film layer at the laser cutting point, the cutting can be performed using only the same laser parameters. For example, a picosecond laser with a wavelength of 1064 nm and an energy power of 0.1 - 1 W.

[0061] If the cutting location is a composite of an organic layer and an inorganic layer, multiple laser cuttings are required. For example, lasers with wavelengths of 355 nm and 532 nm and energies of 0.03 and 0.05 W are used to cut the organic glue. Therefore, the substrate needs to be switched between different laser devices, and laser alignment is required, which is very complicated in actual operation. Moreover, if the cutting location includes an organic layer, it may cause the organic layer to not be cut through by the laser, resulting in adhesion between chips during the cleavage process and reducing the yield.

[0062] In this embodiment, except that the inorganic layer 400 is continuous, the rest can be discontinuous, which is independently set according to each display unit. In particular, the chip bonding layer 500 and the filling layer 800 are discontinuously arranged, which can reduce the warping problem of the substrate caused by temperature rise and fall during the large-size manufacturing process. During cutting, a single laser parameter is used for cutting, which is simple and efficient.

[0063] After completing the entire pixel process, when performing laser cutting and chip cleavage, there is no organic layer set and most of the structural layers are discontinuously arranged, which can reduce the number of laser process cuttings and improve the efficiency. In addition, removing the organic layer can greatly avoid the occurrence of twins.

[0064] The structure of a single display unit is shown in the appendix Figure 9 as shown. The cross-sectional width: from top to bottom, the width of each micro-light-emitting diode in the micro-light-emitting diode layer 600 is the smallest, for example, 40 , and the width of the chip bonding layer 500 is not less than the width of the micro-light-emitting diode, for example, 40 - 42 .

[0065] The inorganic layer 400 (encapsulation layer) continuously covers the surface of the substrate 100, and the width of the color conversion layer 300 is not less than that of the chip bonding layer 500. For example, the thickness is 50 - 70 , and the width of the color filter layer 200 is not less than that of the color conversion layer, and is set to 60 - 90 .

[0066] The reflective layer 700 covers the surfaces and sides of the micro light-emitting diode layer 600, the chip bonding layer 500, the color conversion layer, and the color filter layer, so that in the entire packaging structure of the micro light-emitting diode, only a part of the P and N electrodes on the surface of the micro light-emitting diode layer 600 are exposed, ensuring the electrode expansion in the subsequent process. See the attached Figure 10 As shown, except for the partial electrode area, it is covered by the reflective layer to avoid the problem of light crosstalk between adjacent display units.

[0067] Based on the above manufacturing method, the present invention also discloses an anti-crosstalk light-emitting unit, as Figure 12 shown. A group of light-emitting units includes three display units; each display unit includes, from bottom to top, a color filter layer 200, a color conversion layer 300, an inorganic layer 400, a chip bonding layer 500, a micro light-emitting diode layer 600, and a reflective layer 700 fabricated on the substrate 100.

[0068] The orthographic projection area of the color conversion layer 300 falls within the area of the color filter layer 200; The inorganic layer 400 continuously covers the exposed sides of the color filter layer 200 and the exposed sides and surface of the color conversion layer 300; The chip bonding layer 500 is discontinuous, corresponding to the color conversion layer 300 of each display unit, and the orthographic projection area of the chip bonding layer 500 falls within the area where the color conversion layer 300 is located. The orthographic projection of each micro light-emitting diode of the micro light-emitting diode layer 600 falls within the area where the chip bonding layer 500 is located; The planarizing layer 800 covers the surface of the reflective layer 700, including filling the gaps between adjacent display units, and is discontinuously arranged, at least disconnected at the laser cutting position points. The maximum cross-sectional width of the planarizing layer 800 is not less than the width of the color filter layer 200.

[0069] Electrodes are provided on the surface of the micro light-emitting diode layer 600 and an area is reserved for setting the extended electrode 900; the extended electrode 900 extends outward and is arranged on the surface of the planarizing layer 800 for connecting the chip and the external PCB board.

[0070] The reflective layer 700 covers all the exposed surfaces and sides of the display unit, including the surfaces and sides not covered by the inorganic layer, the surfaces and sides of the chip bonding layer, and the exposed surfaces and sides of the micro light-emitting diode layer 600.

[0071] Refer to the attached Figure 9As shown, except for a partial area on the surface of the micro light-emitting diode layer 600 for fabricating the extended electrode, the rest is covered by the reflective layer 700, and the reflective layer 700 is disposed under the extended electrode 900.

[0072] In the encapsulation structure of the light-emitting display unit provided by the present invention, since the reflective layer 700 passes over the chip bonding layer 500 and the inorganic layer 400 (without an organic layer), it can cover and block the exposed surfaces of the color conversion layer 300 and the color filter layer 200. After encapsulation, there is no optical crosstalk problem in the chip structure, and the light reflected back by the reflective layer 700 can only exit through the color conversion layer 300 and the color filter layer 200, which is equivalent to enhancing the outgoing light and improving the light efficiency. The discontinuous reflective layer 700, the planarization layer 800, and the chip bonding layer 500 facilitate chip dicing and can avoid the warping problem caused by temperature effects during the chip manufacturing process.

[0073] The above embodiments are only for illustrating the technical concept and features of the present invention, and their purpose is to enable those skilled in the art to understand the content of the present invention and implement it accordingly, and it should not be used to limit the protection scope of the present invention. For those skilled in the art, it is obvious that the present invention is not limited to the details of the above exemplary embodiments, and without departing from the spirit or basic characteristics of the present invention, the present invention can be implemented in other specific forms. Therefore, from any point of view, the embodiments should be regarded as exemplary and non-limiting. The scope of the present invention is defined by the appended claims rather than the above description. Therefore, it is intended to embrace all changes falling within the meaning and scope of the equivalent elements of the claims in the present invention.

Claims

1. A manufacturing method of a crosstalk-proof light-emitting unit, characterized in that Comprising: A color filter layer and a color conversion layer are sequentially fabricated on a substrate from bottom to top; A continuous inorganic layer is fabricated on the exposed surface of the color filter layer, the surface and the side surfaces of the color conversion layer; A discontinuous chip bonding layer is fabricated on the inorganic layer; A blue micro light-emitting diode layer is transferred and fabricated on the chip bonding layer; the orthographic projection area of the micro light-emitting diode layer is not larger than that of the chip bonding layer; A reflective layer is fabricated on the exposed surface and side surfaces of the inorganic layer not covered, the exposed surface and side surfaces of the chip bonding layer, and the exposed surface and side surfaces of the micro light-emitting diode layer; a discontinuous planarizing layer is fabricated on the surface of the reflective layer; Operations including grinding and thinning, laser cutting, and cleaving are performed on the substrate to form independent discrete devices.

2. The manufacturing method of a crosstalk prevention light emitting unit according to claim 1, wherein The electrode part of the micro light-emitting diode layer is exposed from the planarizing layer to facilitate the fabrication of an extended electrode. Except for the area used for fabricating the extended electrode, the exposed surface of the micro light-emitting diode layer is covered by the reflective layer, and the reflective layer is disposed under the extended electrode.

3. The manufacturing method of a crosstalk-proof light-emitting unit according to claim 2, characterized in that, The chip bonding layer corresponds to the color conversion layer, and the orthographic projection of the chip bonding layer falls within the area where the color conversion layer is located, and the orthographic projection of the micro-light emitting diode layer falls within the area where the chip bonding layer is located; the thickness of the chip bonding layer is not greater than 2 .

4. The manufacturing method of a crosstalk-proof light-emitting unit according to claim 3, wherein The planarizing layer is made of an organic material, including a photolithographic polyimide material or an acrylic photoresist material; It fills and covers the surface of the reflective layer and is disconnected on the surface of the micro light-emitting diode to form a discontinuous covering-filling structure; and the maximum width of the planarizing layer is not less than the width of the color filter layer.

5. The manufacturing method of a crosstalk-proof light-emitting unit according to claim 2, characterized in that, At least one group of light-emitting units is synchronously fabricated on a substrate, and one group of light-emitting units includes one display unit or three display units; When performing laser cutting, one display unit or three display units are taken as a group, and the connection part between adjacent light-emitting units is cut, and the reflective layer, the inorganic layer, and the substrate between adjacent units are disconnected to divide the light-emitting units into discrete devices.

6. The manufacturing method of a crosstalk prevention light emitting unit according to claim 5, characterized in that, The color filter layers of the three display units in each group of light-emitting units respectively correspond to a first yellow filter, a second yellow filter, and a blue filter; the three corresponding micro light-emitting diodes in each group of light-emitting units are independent and discontinuous from each other; On the top surfaces of the blue filter, the first yellow filter, and the second yellow filter of the color filter layer, a color conversion layer is fabricated by photolithography, correspondingly including an RQD layer, a GQD layer, and a blank layer; Among them, the RQD layer and the GQD layer contain red and green quantum dot materials for color conversion, and the material of the blank layer does not contain quantum dot materials; The orthographic projections of the RQD layer, the GQD layer, and the blank layer fall within the regions where the corresponding blue filter, the first yellow filter, and the second yellow filter are located.

7. The manufacturing method of a crosstalk-proof light-emitting unit according to claim 1, wherein The thickness of the color filter layer is 1-5 ; the thickness of the color conversion layer is 3-7 .

8. The manufacturing method of an anti-crosstalk light-emitting unit according to claim 1, wherein The material of the inorganic layer includes one or a combination of several of SiO2, Al2O3, and TiO2; The thickness of the inorganic layer is 20 - 2000 nm.

9. The manufacturing method of a crosstalk-proof light-emitting unit according to claim 2, wherein The reflective layer is set as a DBR structure or a metal mirror, and the thickness of the reflective layer is set to 1-3 .

10. An anti-crosstalk light-emitting unit, characterized in that, Fabricated by using the manufacturing method of an anti-crosstalk light-emitting unit according to any one of claims 1 - 9, and one group of light-emitting units includes three display units; Each display unit includes a color filter layer, a color conversion layer, an inorganic layer, a chip bonding layer, a micro light-emitting diode layer, and a reflective layer from bottom to top; The orthographic projection of the color conversion layer falls within the region where the color filter layer is located; The inorganic layer continuously covers the exposed side surfaces of the color filter layer and the exposed side surfaces and the surface of the color conversion layer; The chip bonding layer is discontinuous, corresponding to the color conversion layer of each display unit, and the orthographic projection of the chip bonding layer falls within the area where the color conversion layer is located, and the orthographic projection of the micro-light emitting diode layer falls within the area where the chip bonding layer is located; An electrode is provided on the surface of the micro-light emitting diode layer and an area is reserved for setting an extended electrode; The filling layer fills and covers the surface of the reflective layer, including the gaps between adjacent display units, and is discontinuously provided, and is at least disconnected at the laser cutting position points; The reflective layer covers all exposed surfaces and sides of the display unit, and, except for the area used to fabricate the extended electrode, the exposed surface of the micro-light emitting diode layer is covered by the reflective layer, and the reflective layer is provided under the extended electrode.

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