Semiconductor laser element with topological phonon state layer

Abstract

The invention provides a semiconductor laser element with a topological phonon state layer. The semiconductor laser element comprises a substrate, a lower limiting layer, a lower waveguide layer, an active layer, an upper waveguide layer and an upper limiting layer which are sequentially arranged from bottom to top. According to the semiconductor laser element, the topological phonon state layers of a multi-layer structure are arranged between the lower waveguide layer and the lower limiting layer of the semiconductor laser element, and the saturated electron drift rate distribution characteristic, the electron affinity distribution characteristic and the polarized optical phonon energy distribution characteristic of each topological phonon state layer are designed; according to the invention, the topological quantum state and the topological phase change of the phonon spectrum can be adjusted, the quantum state and the lattice vibration mode can be changed, the Stokes frequency shift loss of the photon energy difference between the pump light and the oscillation light can be reduced, and the thermal stress and temperature quenching problems of the laser can be inhibited.

Description

Technical Field

[0001] The present application relates to the field of semiconductor optoelectronic devices, and in particular to a semiconductor laser element having a topological phonon state layer. Background Art

[0002] Lasers are widely used in laser displays, laser televisions, laser projectors, communications, medical treatment, weaponry, guidance, rangefinders, spectral analysis, cutting, precision welding, high-density optical storage, and other fields. There are many different types of lasers, classified in various ways, including solid-state, gas, liquid, semiconductor, and dye lasers. Compared with other types of lasers, all-solid-state semiconductor lasers offer advantages such as small size, high efficiency, light weight, excellent stability, long life, simple and compact structure, and miniaturization.

[0003] There are significant differences between lasers and nitride semiconductor light-emitting diodes:

[0004] 1) Laser is generated by stimulated radiation of carriers, with a small spectral half-width and high brightness. The output power of a single laser can be in the W level, while nitride semiconductor light-emitting diodes emit spontaneous radiation, and the output power of a single light-emitting diode is in the mW level.

[0005] 2) The current density of the laser reaches KA / cm2, which is more than 2 orders of magnitude higher than that of nitride light-emitting diodes, resulting in stronger electron leakage, more serious Auger recombination, stronger polarization effect, more serious electron-hole mismatch, and more serious efficiency attenuation Droop effect;

[0006] 3) The spontaneous transition radiation of the light-emitting diode is incoherent light that transitions from a high energy level to a low energy level without any external influence, while the laser is stimulated transition radiation. The energy of the induced photon should be equal to the difference in the energy level of the electron transition, and the photon and the induced photon are completely coherent light;

[0007] 4) Different principles: Light-emitting diodes generate radiative recombination light when electrons and holes jump to quantum wells or pn junctions under the action of external voltage, while lasers require that lasing conditions be met before lasing. The carrier inversion distribution in the active region must be met, and the stimulated radiation light oscillates back and forth in the resonant cavity. The propagation in the gain medium amplifies the light, and the threshold condition is met so that the gain is greater than the loss, and finally the laser is output.

[0008] Nitride semiconductor lasers have the following problems:

[0009] 1) Non-radiative recombination losses and free carrier absorption in the active area of ​​the laser chip generate a large amount of heat. At the same time, the resistance of the epitaxial and chip materials will produce Joule heat loss and carrier absorption loss under current injection. In addition, the chip material has low thermal conductivity and poor heat dissipation performance, which leads to an increase in the temperature of the active layer, resulting in problems such as red shift of the lasing wavelength, decreased quantum efficiency, reduced power, increased threshold current, shortened life and poor reliability.

[0010] 2) Thermal loss: The Stokes shift loss caused by the photon energy difference between the pump light and the oscillator light is converted into heat, and the energy loss caused by the non-1 coupling rate from the pump energy level to the laser upper energy level is converted into heat. The two together generate a large amount of waste heat, which makes the temperature distribution of the laser uneven, causing uneven distribution of thermal expansion and thermal stress, resulting in temperature quenching, laser breakage, thermal lens effect and stress birefringence effect; thermal lens produces a lens-like phenomenon in space, and the stress birefringence effect changes the polarization state of the incident light, causing depolarization and distortion of the laser beam. Summary of the Invention

[0011] In order to solve one of the above technical problems, the present invention provides a semiconductor laser element having a topological phonon state layer.

[0012] An embodiment of the present invention provides a semiconductor laser element having a topological phonon state layer, comprising a substrate, a lower confinement layer, a lower waveguide layer, an active layer, an upper waveguide layer, and an upper confinement layer, arranged in sequence from bottom to top; a topological phonon state layer is provided between the lower waveguide layer and the lower confinement layer; the topological phonon state layer comprises a first topological phonon state layer, a second topological phonon state layer, and a third topological phonon state layer, arranged in sequence from bottom to top; the first topological phonon state layer, the second topological phonon state layer, and the third topological phonon state layer all have saturated electron drift velocity distribution characteristics, electron affinity distribution characteristics, and polari-optical phonon energy distribution characteristics;

[0013] The saturated electron drift rate of the first topological phonon state layer has a curve distribution of the function y1=A+B*lnx1+1 / x1-1;

[0014] The saturated electron drift velocity of the second topological phonon state layer has a linear function distribution;

[0015] The saturated electron drift rate of the third topological phonon state layer has a second four-quadrant curve distribution of the function y2=C+D*cosx3 / x3;

[0016] The electron affinity of the first topological phonon state layer has the function y3=E+F*lnx1 / e x1 Curve distribution;

[0017] The electron affinity of the second topological phonon state layer has a linear function distribution;

[0018] The electron affinity of the third topological phonon state layer has the function y4=G+H*sinx3 / x3 2 The third quadrant curve distribution;

[0019] The polarioptic phonon energy of the first topological phonon state layer has a curve distribution of function y5=I+J*lnx1 / x1;

[0020] The polarioptic phonon energy of the second topological phonon state layer has a linear function distribution;

[0021] The polarioptic phonon energy of the third topological phonon state layer has the function y6=K+L*x3e x3 Curve distribution;

[0022] Among them, x1 is the depth from the first topological phonon state layer to the second topological phonon state layer, and x3 is the depth from the third topological phonon state layer to the lower waveguide layer.

[0023] Preferably, the saturated electron drift velocity of the first topological phonon state layer is a, the saturated electron drift velocity of the second topological phonon state layer is b, and the saturated electron drift velocity of the third topological phonon state layer is c, wherein: 1E6≤a≤b≤c≤5E8 (cm / s).

[0024] Preferably, the electron affinity of the first topological phonon state layer is d, the electron affinity of the second topological phonon state layer is e, and the electron affinity of the third topological phonon state layer is f, wherein: 0.1≤e≤d≤f≤10 (eV).

[0025] Preferably, the polarimetric phonon energy of the first topological phonon state layer is g, the polarimetric phonon energy of the second topological phonon state layer is h, and the polarimetric phonon energy of the third topological phonon state layer is i, where: 5≤i≤h≤g≤500 (meV).

[0026] Preferably, the first topological phonon state layer, the second topological phonon state layer and the third topological phonon state layer further have a refractive index coefficient distribution characteristic;

[0027] The refractive index coefficient of the first topological phonon state layer has the function y7=M+N*sin / x1 2 First quadrant curve distribution;

[0028] The refractive index coefficient of the second topological phonon state layer has a linear function distribution;

[0029] The refractive index coefficient of the third topological phonon state layer has the function y8=O+P*sinx3 / x3 2 The third quadrant curve distribution;

[0030] The refractive index coefficient of the first topological phonon state layer is j, the refractive index coefficient of the second topological phonon state layer is k, and the refractive index coefficient of the third topological phonon state layer is l, wherein: 1≤j≤k≤l≤5.

[0031] Preferably, the first topological phonon state layer, the second topological phonon state layer and the third topological phonon state layer further have a transverse phonon velocity distribution characteristic;

[0032] The transverse phonon velocity of the first topological phonon state layer has the function y9=Q+R*x1 / e x1 Curve distribution;

[0033] The transverse phonon velocity of the second topological phonon state layer has a linear function distribution;

[0034] The transverse phonon velocity of the third topological phonon state layer has the function y 10 =S+T*x3 2 e x3 The third quadrant curve distribution;

[0035] The transverse phonon velocity of the first topological phonon state layer is m, the transverse phonon velocity of the second topological phonon state layer is n, and the transverse phonon velocity of the third topological phonon state layer is p, where: 5E4≤m≤n≤p≤5E7 (cm / s).

[0036] Preferably, the first topological phonon state layer, the second topological phonon state layer and the third topological phonon state layer also have longitudinal phonon velocity distribution characteristics;

[0037] The longitudinal phonon velocity of the first topological phonon state layer has a function y 11 =U+V*x1 / e x1 Curve distribution;

[0038] The longitudinal phonon velocity of the second topological phonon state layer has a linear function distribution;

[0039] The longitudinal phonon velocity of the third topological phonon state layer has the function y=W+Z*x3 2 e x3 The third quadrant curve distribution;

[0040] The longitudinal phonon velocity of the first topological phonon state layer is r, the longitudinal phonon velocity of the second topological phonon state layer is s, and the longitudinal phonon velocity of the third topological phonon state layer is t, wherein: 5E4≤r≤s≤t≤5E7 (cm / s).

[0041] Preferably, the first topological phonon state layer, the second topological phonon state layer and the third topological phonon state layer are any one or any combination of GaN, InGaN, InN, AlInN, AlGaN, AlInGaN, AlN, GaAs, GaP, InP, AlGaAs, AlInGaAs, AlGaInP, InGaAs, InGaAsN, AlInAs, AlInP, AlGaP, InGaP, GaSb, InSb, InAs, InAsSb, AlGaSb, AlSb, InGaSb, AlGaAsSb, InGaAsSb, SiC, Ga2O3, BN, diamond, BaTiO3, BAs, PbTiO3, FAPbI3 (formamido lead iodide), CsPbI3, and Bi2O2Se.

[0042] Preferably, the active layer is a periodic structure composed of a well layer and a barrier layer, and the number of periods is 3≥z≥1;

[0043] The well layer is any one or any combination of GaN, InGaN, InN, AlInN, AlGaN, AlInGaN, AlN, GaAs, GaP, InP, AlGaAs, AlInGaAs, AlGaInP, InGaAs, InGaAsN, AlInAs, AlInP, AlGaP, InGaP, GaSb, InSb, InAs, InAsSb, AlGaSb, AlSb, InGaSb, AlGaAsSb, InGaAsSb, SiC, Ga2O3, and BN, and has a thickness of 10 angstroms to 100 angstroms;

[0044] The barrier layer is any one or any combination of GaN, InGaN, InN, AlInN, AlGaN, AlInGaN, AlN, GaAs, GaP, InP, AlGaAs, AlInGaAs, AlGaInP, InGaAs, InGaAsN, AlInAs, AlInP, AlGaP, InGaP, GaSb, InSb, InAs, InAsSb, AlGaSb, AlSb, InGaSb, AlGaAsSb, InGaAsSb, SiC, Ga2O3, BN, and diamond, with a thickness of 10 angstroms to 150 angstroms.

[0045] Preferably, the lower confinement layer, the lower waveguide layer, the upper waveguide layer, and the upper confinement layer are any one or any combination of GaN, InGaN, InN, AlInN, AlGaN, AlInGaN, AlN, GaAs, GaP, InP, AlGaAs, AlInGaAs, AlGaInP, InGaAs, InGaAsN, AlInAs, AlInP, AlGaP, InGaP, GaSb, InSb, InAs, InAsSb, AlGaSb, AlSb, InGaSb, AlGaAsSb, InGaAsSb, SiC, Ga2O3, and BN.

[0046] Preferably, the substrate includes sapphire, silicon, Ge, SiC, AlN, GaN, GaAs, InP, InAs, GaSb, sapphire / SiO2 composite substrate, Mo, TiW, CuW, Cu, sapphire / AlN composite substrate, diamond, sapphire / SiN x , sapphire / SiO2 / SiN x Composite substrate, any one of magnesium aluminum spinel MgAl2O4, MgO, ZnO, ZrB2, LiAlO2 and LiGaO2 composite substrates.

[0047] The beneficial effects of the present invention are as follows: the present invention arranges a multi-layer topological phonon state layer between the lower waveguide layer and the lower confinement layer of the semiconductor laser element, and designs the saturated electron drift rate distribution characteristics, electron affinity distribution characteristics and polarization optical phonon energy distribution characteristics of each topological phonon state layer, which can adjust the topological phase transition of the topological quantum state and phonon spectrum, change the quantum state and lattice vibration mode, reduce the Stokes frequency shift loss of the energy difference between the pump light and the oscillation light photons, and suppress the thermal stress and temperature quenching problems of the laser. BRIEF DESCRIPTION OF THE DRAWINGS

[0048] The drawings described herein are used to provide a further understanding of the present application and constitute a part of the present application. The illustrative embodiments of the present application and their descriptions are used to explain the present application and do not constitute an improper limitation on the present application. In the drawings:

[0049] Figure 1 A schematic structural diagram of a semiconductor laser element with a topological phonon state layer according to an embodiment of the present invention;

[0050] Figure 2 This is a SIMS secondary ion mass spectrum of the semiconductor laser element with a topological phonon state layer described in an embodiment of the present invention.

[0051] Reference numerals:

[0052] 100, substrate, 101, lower confinement layer, 102, lower waveguide layer, 103, active layer, 104, upper waveguide layer, 105, upper confinement layer, 106, topological phonon state layer;

[0053] 106a, the first topological phonon state layer, 106b, the second topological phonon state layer, 106c, the third topological phonon state layer. DETAILED DESCRIPTION

[0054] In order to make the technical solutions and advantages of the embodiments of the present application more clearly understood, the exemplary embodiments of the present application are further described in detail below with reference to the accompanying drawings. Obviously, the described embodiments are only part of the embodiments of the present application, and are not an exhaustive list of all the embodiments. It should be noted that the embodiments and features in the embodiments of the present application can be combined with each other unless they conflict.

[0055] like Figure 1 and Figure 2 As shown, this embodiment provides a semiconductor laser element with a topological phononic state layer, comprising, arranged from bottom to top, a substrate 100, a lower confinement layer 101, a lower waveguide layer 102, an active layer 103, an upper waveguide layer 104, and an upper confinement layer 105. A topological phononic state layer 106 is also provided in the semiconductor laser element with a topological phononic state layer.

[0056] Specifically, in this embodiment, the semiconductor laser element having a topological phononic state layer is provided with, from bottom to top, a substrate 100, a lower confinement layer 101, a lower waveguide layer 102, an active layer 103, an upper waveguide layer 104, and an upper confinement layer 105. A topological phononic state layer 106 is provided between the lower waveguide layer 102 and the lower confinement layer 101. The topological phononic state layer 106 has a multilayer structure, specifically including a first topological phononic state layer 106a, a second topological phononic state layer 106b, and a third topological phononic state layer 106c. The first topological phononic state layer 106a, the second topological phononic state layer 106b, and the third topological phononic state layer 106c are provided in order from bottom to top.

[0057] In this embodiment, the first topological phonon layer 106a, the second topological phonon layer 106b, and the third topological phonon layer 106c all have certain specific physical property distributions, including but not limited to saturated electron drift velocity distribution characteristics, electron affinity distribution characteristics, and polarimetric phonon energy distribution characteristics. Specifically, the saturated electron drift velocity distribution characteristics, electron affinity distribution characteristics, and polarimetric phonon energy distribution characteristics in the first topological phonon layer 106a, the second topological phonon layer 106b, and the third topological phonon layer 106c are as follows:

[0058] Saturated electron drift velocity distribution:

[0059] The saturated electron drift velocity of the first topological phonon state layer 106a has a curve distribution of the function y1=A+B*lnx1+1 / x1-1;

[0060] The saturated electron drift velocity of the second topological phonon state layer 106b has a linear function distribution;

[0061] The saturated electron drift velocity of the third topological phonon state layer 106c has a second four-quadrant curve distribution of the function y2=C+D*cosx3 / x3;

[0062] Electron affinity distribution:

[0063] The electron affinity of the first topological phonon state layer 106a has the function y3=E+F*lnx1 / e x1 Curve distribution;

[0064] The electron affinity of the second topological phonon state layer 106b has a linear function distribution;

[0065] The electron affinity of the third topological phonon state layer 106c has the function y4=G+H*sinx3 / x3 2 The third quadrant curve distribution;

[0066] Polarimetric phonon energy distribution:

[0067] The polari-optical phonon energy of the first topological phonon state layer 106a has a distribution curve of the function y5=I+J*lnx1 / x1;

[0068] The polarimetric phonon energy of the second topological phonon state layer 106b has a linear function distribution;

[0069] The polarimetric phonon energy of the third topological phonon state layer 106c has the function y6=K+L*x3e x3 Curve distribution;

[0070] Wherein, x1 is the depth from the first topological phonon state layer 106a to the second topological phonon state layer 106b, and x3 is the depth from the third topological phonon state layer 106c to the lower waveguide layer 102.

[0071] In this embodiment, a multi-layer topological phonon state layer 106 is arranged between the lower waveguide layer 102 and the lower confinement layer 101 of the semiconductor laser element, and the saturated electron drift rate distribution characteristics, electron affinity distribution characteristics and polarimetric phonon energy distribution characteristics of each topological phonon state layer are designed. This can adjust the topological phase transition of the topological quantum state and phonon spectrum, change the quantum state and lattice vibration mode, reduce the Stokes frequency shift loss of the energy difference between the pump light and the oscillation light photons, and suppress the thermal stress and temperature quenching problems of the laser.

[0072] In some optional embodiments, the saturated electron drift velocity, electron affinity, and polarimetric phonon energy in the first topological phonon state layer 106 a, the second topological phonon state layer 106 b, and the third topological phonon state layer 106 c also have a certain magnitude relationship, specifically:

[0073] Saturated electron drift rate:

[0074] The saturated electron drift velocity of the first topological phonon state layer 106a is a;

[0075] The saturated electron drift velocity of the second topological phonon state layer 106b is b;

[0076] The saturated electron drift velocity of the third topological phonon state layer 106c is c;

[0077] The relationship between the saturated electron drift velocities in the first topological phonon state layer 106 a , the second topological phonon state layer 106 b , and the third topological phonon state layer 106 c is: 1E6≤a≤b≤c≤5E8 (cm / s).

[0078] Electron affinity:

[0079] The electron affinity of the first topological phonon state layer 106a is d;

[0080] The electron affinity of the second topological phonon state layer 106b is e;

[0081] The electron affinity of the third topological phonon state layer 106c is f;

[0082] The electron affinity relationship in the first topological phonon state layer 106a, the second topological phonon state layer 106b and the third topological phonon state layer 106c is: 0.1≤e≤d≤f≤10 (eV).

[0083] Polarimetric phonon energy:

[0084] The polarimetric phonon energy of the first topological phonon state layer 106a is g;

[0085] The polarimetric phonon energy of the second topological phonon state layer 106b is h;

[0086] The polarimetric phonon energy of the third topological phonon state layer 106c is i;

[0087] The relationship between the polarioptic phonon energies in the first topological phonon state layer 106a, the second topological phonon state layer 106b, and the third topological phonon state layer 106c is: 5≤i≤h≤g≤500 (meV).

[0088] In some optional embodiments, the first topological phonon state layer 106a, the second topological phonon state layer 106b, and the third topological phonon state layer 106c further have a refractive index coefficient distribution characteristic, which is specifically manifested as follows:

[0089] The refractive index coefficient of the first topological phonon state layer 106a has the function y7=M+N*sin / x1 2 First quadrant curve distribution;

[0090] The refractive index coefficient of the second topological phonon state layer 106b has a linear function distribution;

[0091] The refractive index coefficient of the third topological phonon state layer 106c has the function y8=O+P*sinx3 / x3 2 The third quadrant curve distribution.

[0092] More specifically, the refractive index coefficient of the first topological phonon state layer 106a is j, the refractive index coefficient of the second topological phonon state layer 106b is k, and the refractive index coefficient of the third topological phonon state layer 106c is l. The relationship between the refractive index coefficients in the first topological phonon state layer 106a, the second topological phonon state layer 106b and the third topological phonon state layer 106c is: 1≤j≤k≤l≤5.

[0093] In some optional embodiments, the first topological phonon state layer 106a, the second topological phonon state layer 106b, and the third topological phonon state layer 106c further have a transverse phonon velocity distribution characteristic, which is specifically manifested as follows:

[0094] The transverse phonon velocity of the first topological phonon state layer 106a has the function y9=Q+R*x1 / e x1 Curve distribution;

[0095] The transverse phonon velocity of the second topological phonon state layer 106b has a linear function distribution;

[0096] The transverse phonon velocity of the third topological phonon state layer 106c has the function y 10 =S+T*x3 2 e x3 The third quadrant curve distribution.

[0097] More specifically, the transverse phonon velocity of the first topological phonon state layer 106a is m, the transverse phonon velocity of the second topological phonon state layer 106b is n, and the transverse phonon velocity of the third topological phonon state layer 106c is p. The relationship between the transverse phonon velocities in the first topological phonon state layer 106a, the second topological phonon state layer 106b and the third topological phonon state layer 106c is: 5E4≤m≤n≤p≤5E7 (cm / s).

[0098] In some optional embodiments, the first topological phonon state layer 106a, the second topological phonon state layer 106b, and the third topological phonon state layer 106c further have longitudinal phonon velocity distribution characteristics, which are specifically manifested as follows:

[0099] The longitudinal phonon velocity of the first topological phonon state layer 106a has the function y 11 =U+V*x1 / e x1 Curve distribution;

[0100] The longitudinal phonon velocity of the second topological phonon state layer 106b has a linear function distribution;

[0101] The longitudinal phonon velocity of the third topological phonon state layer 106c has the function y=W+Z*x3 2 e x3 The third quadrant curve distribution.

[0102] More specifically, the longitudinal phonon velocity of the first topological phonon state layer 106a is r, the longitudinal phonon velocity of the second topological phonon state layer 106b is s, and the longitudinal phonon velocity of the third topological phonon state layer 106c is t. The relationship between the longitudinal phonon velocities in the first topological phonon state layer 106a, the second topological phonon state layer 106b and the third topological phonon state layer 106c is: 5E4≤r≤s≤t≤5E7 (cm / s).

[0103] This embodiment designs specific refractive index coefficient distribution characteristics, transverse phonon velocity distribution characteristics, and longitudinal phonon velocity distribution characteristics in the first topological phonon state layer 106a, the second topological phonon state layer 106b, and the third topological phonon state layer 106c, thereby reducing the energy of polar covalent bonds and resonant bonds, reducing phonon anharmonicity, improving thermal conductivity, reducing heat loss of the laser, improving the heat dissipation capacity of the laser, reducing heat accumulation in the active layer, and lowering the temperature of the active layer. It can improve the quantum efficiency of the laser, reduce the threshold current, improve the spot output, improve the beam quality factor of the laser, and suppress the depolarization and distortion problems of the laser beam.

[0104] In some optional embodiments, the first topological phonon state layer 106a, the second topological phonon state layer 106b and the third topological phonon state layer 106c are any one or any combination of GaN, InGaN, InN, AlInN, AlGaN, AlInGaN, AlN, GaAs, GaP, InP, AlGaAs, AlInGaAs, AlGaInP, InGaAs, InGaAsN, AlInAs, AlInP, AlGaP, InGaP, GaSb, InSb, InAs, InAsSb, AlGaSb, AlSb, InGaSb, AlGaAsSb, InGaAsSb, SiC, Ga2O3, BN, diamond, BaTiO3, BAs, PbTiO3, FAPbI3 (lead imide iodide), CsPbI3, and Bi2O2Se.

[0105] In some optional embodiments, the active layer 103 is a periodic structure composed of a well layer and a barrier layer, and the number of periods is 3≥z≥1.

[0106] Specifically, the well layer is any one or any combination of GaN, InGaN, InN, AlInN, AlGaN, AlInGaN, AlN, GaAs, GaP, InP, AlGaAs, AlInGaAs, AlGaInP, InGaAs, InGaAsN, AlInAs, AlInP, AlGaP, InGaP, GaSb, InSb, InAs, InAsSb, AlGaSb, AlSb, InGaSb, AlGaAsSb, InGaAsSb, SiC, Ga2O3, and BN, and has a thickness of 10 angstroms to 100 angstroms.

[0107] The barrier layer is any one or any combination of GaN, InGaN, InN, AlInN, AlGaN, AlInGaN, AlN, GaAs, GaP, InP, AlGaAs, AlInGaAs, AlGaInP, InGaAs, InGaAsN, AlInAs, AlInP, AlGaP, InGaP, GaSb, InSb, InAs, InAsSb, AlGaSb, AlSb, InGaSb, AlGaAsSb, InGaAsSb, SiC, Ga2O3, BN, and diamond, with a thickness of 10 angstroms to 150 angstroms.

[0108] In some optional embodiments, the lower confinement layer 101, the lower waveguide layer 102, the upper waveguide layer 104, and the upper confinement layer 105 are any one or any combination of GaN, InGaN, InN, AlInN, AlGaN, AlInGaN, AlN, GaAs, GaP, InP, AlGaAs, AlInGaAs, AlGaInP, InGaAs, InGaAsN, AlInAs, AlInP, AlGaP, InGaP, GaSb, InSb, InAs, InAsSb, AlGaSb, AlSb, InGaSb, AlGaAsSb, InGaAsSb, SiC, Ga2O3, and BN.

[0109] In some optional embodiments, the substrate 100 includes sapphire, silicon, Ge, SiC, AlN, GaN, GaAs, InP, InAs, GaSb, sapphire / SiO2 composite substrate, Mo, TiW, CuW, Cu, sapphire / AlN composite substrate, diamond, sapphire / SiN x , sapphire / SiO2 / SiN x Composite substrate, any one of magnesium aluminum spinel MgAl2O4, MgO, ZnO, ZrB2, LiAlO2 and LiGaO2 composite substrates.

[0110] The following table compares the parameters of a conventional semiconductor laser element and the semiconductor laser element with a topological phonon state layer proposed in this embodiment, including beam quality factor, threshold current density, optical power, and temperature quenching ratio, showing the differences between the conventional semiconductor laser element and the semiconductor laser element with a topological phonon state layer proposed in this embodiment:

[0111]

[0112] It can be seen that the semiconductor laser element with a topological phonon state layer proposed in this embodiment has improved beam quality factor and optical power, reduced threshold current density and temperature quenching ratio compared with traditional semiconductor laser elements, and has obvious advantages over traditional semiconductor laser elements.

[0113] Obviously, those skilled in the art may make various changes and modifications to this application without departing from the spirit and scope of this application. Thus, if these modifications and variations of this application fall within the scope of the claims of this application and their equivalents, this application is intended to include these modifications and variations.

Claims

1. A semiconductor laser element having a topological phonon state layer, comprising a substrate, a lower confinement layer, a lower waveguide layer, an active layer, an upper waveguide layer, and an upper confinement layer, arranged in order from bottom to top, characterized in that: A topological phonon state layer is provided between the lower waveguide layer and the lower confinement layer, wherein the topological phonon state layer includes a first topological phonon state layer, a second topological phonon state layer, and a third topological phonon state layer, which are arranged in sequence from bottom to top, and each of the first topological phonon state layer, the second topological phonon state layer, and the third topological phonon state layer has a saturated electron drift velocity distribution characteristic, an electron affinity distribution characteristic, and a polarimetric phonon energy distribution characteristic; The saturated electron drift rate of the first topological phonon state layer has a curve distribution of the function y1=A+B*lnx1+1 / x1-1; The saturated electron drift velocity of the second topological phonon state layer has a linear function distribution; The saturated electron drift rate of the third topological phonon state layer has a second four-quadrant curve distribution of the function y2=C+D*cosx3 / x3; The electron affinity of the first topological phonon state layer has the function y3=E+F*lnx1 / e x1 Curve distribution; The electron affinity of the second topological phonon state layer has a linear function distribution; The electron affinity of the third topological phonon state layer has the function y4=G+H*sinx3 / x3 2 The third quadrant curve distribution; The polarioptic phonon energy of the first topological phonon state layer has a curve distribution of function y5=I+J*lnx1 / x1; The polarioptic phonon energy of the second topological phonon state layer has a linear function distribution; The polarioptic phonon energy of the third topological phonon state layer has the function y6=K+L*x3e x3 Curve distribution; Among them, x1 is the depth from the first topological phonon state layer to the second topological phonon state layer, and x3 is the depth from the third topological phonon state layer to the lower waveguide layer.

2. The semiconductor laser device having a topological phonon state layer according to claim 1, characterized in that: The saturated electron drift velocity of the first topological phonon state layer is a, the saturated electron drift velocity of the second topological phonon state layer is b, and the saturated electron drift velocity of the third topological phonon state layer is c, where: 1E6≤a≤b≤c≤5E8 (cm / s).

3. The semiconductor laser device having a topological phonon state layer according to claim 1, characterized in that: The electron affinity of the first topological phonon state layer is d, the electron affinity of the second topological phonon state layer is e, and the electron affinity of the third topological phonon state layer is f, wherein: 0.1≤e≤d≤f≤10 (eV).

4. The semiconductor laser device having a topological phonon state layer according to claim 1, characterized in that: The polarimetric phonon energy of the first topological phonon state layer is g, the polarimetric phonon energy of the second topological phonon state layer is h, and the polarimetric phonon energy of the third topological phonon state layer is i, where: 5≤i≤h≤g≤500 (meV).

5. The semiconductor laser device having a topological phonon state layer according to claim 1, characterized in that: The first topological phonon state layer, the second topological phonon state layer and the third topological phonon state layer also have a refractive index coefficient distribution characteristic; The refractive index coefficient of the first topological phonon state layer has the function y7=M+N*sin / x1 2 First quadrant curve distribution; The refractive index coefficient of the second topological phonon state layer has a linear function distribution; The refractive index coefficient of the third topological phonon state layer has the function y8=O+P*sinx3 / x3 2 The third quadrant curve distribution; The refractive index coefficient of the first topological phonon state layer is j, the refractive index coefficient of the second topological phonon state layer is k, and the refractive index coefficient of the third topological phonon state layer is l, wherein: 1≤j≤k≤l≤5.

6. The semiconductor laser device having a topological phonon state layer according to claim 1, characterized in that: The first topological phonon state layer, the second topological phonon state layer and the third topological phonon state layer also have a transverse phonon velocity distribution characteristic; The transverse phonon velocity of the first topological phonon state layer has the function y9=Q+R*x1 / e x1 Curve distribution; The transverse phonon velocity of the second topological phonon state layer has a linear function distribution; The transverse phonon velocity of the third topological phonon state layer has the function y 10 =S+T*x3 2 e x3 The third quadrant curve distribution; The transverse phonon velocity of the first topological phonon state layer is m, the transverse phonon velocity of the second topological phonon state layer is n, and the transverse phonon velocity of the third topological phonon state layer is p, where: 5E4≤m≤n≤p≤5E7 (cm / s).

7. The semiconductor laser device having a topological phonon state layer according to claim 1, characterized in that: The first topological phonon state layer, the second topological phonon state layer and the third topological phonon state layer also have longitudinal phonon velocity distribution characteristics; The longitudinal phonon velocity of the first topological phonon state layer has a function y 11 =U+V*x1 / e x1 Curve distribution; The longitudinal phonon velocity of the second topological phonon state layer has a linear function distribution; The longitudinal phonon velocity of the third topological phonon state layer has the function y=W+Z*x3 2 e x3 The third quadrant curve distribution; The longitudinal phonon velocity of the first topological phonon state layer is r, the longitudinal phonon velocity of the second topological phonon state layer is s, and the longitudinal phonon velocity of the third topological phonon state layer is t, wherein: 5E4≤r≤s≤t≤5E7 (cm / s).

8. The semiconductor laser device having a topological phonon state layer according to claim 1, wherein: The first topological phonon state layer, the second topological phonon state layer and the third topological phonon state layer are any one or any combination of GaN, InGaN, InN, AlInN, AlGaN, AlInGaN, AlN, GaAs, GaP, InP, AlGaAs, AlInGaAs, AlGaInP, InGaAs, InGaAsN, AlInAs, AlInP, AlGaP, InGaP, GaSb, InSb, InAs, InAsSb, AlGaSb, AlSb, InGaSb, AlGaAsSb, InGaAsSb, SiC, Ga2O3, BN, diamond, BaTiO3, BAs, PbTiO3, FAPbI3 (lead imide iodide), CsPbI3, and Bi2O2Se.

9. The semiconductor laser device having a topological phonon state layer according to claim 1, characterized in that: The active layer is a periodic structure composed of a well layer and a barrier layer, and the number of periods is 3≥z≥1; The well layer is any one or any combination of GaN, InGaN, InN, AlInN, AlGaN, AlInGaN, AlN, GaAs, GaP, InP, AlGaAs, AlInGaAs, AlGaInP, InGaAs, InGaAsN, AlInAs, AlInP, AlGaP, InGaP, GaSb, InSb, InAs, InAsSb, AlGaSb, AlSb, InGaSb, AlGaAsSb, InGaAsSb, SiC, Ga2O3, and BN, and has a thickness of 10 angstroms to 100 angstroms; The barrier layer is any one or any combination of GaN, InGaN, InN, AlInN, AlGaN, AlInGaN, AlN, GaAs, GaP, InP, AlGaAs, AlInGaAs, AlGaInP, InGaAs, InGaAsN, AlInAs, AlInP, AlGaP, InGaP, GaSb, InSb, InAs, InAsSb, AlGaSb, AlSb, InGaSb, AlGaAsSb, InGaAsSb, SiC, Ga2O3, BN, and diamond, with a thickness of 10 angstroms to 150 angstroms.

10. The semiconductor laser device having a topological phonon state layer according to claim 1, characterized in that: The lower confinement layer, the lower waveguide layer, the upper waveguide layer, and the upper confinement layer are any one or any combination of GaN, InGaN, InN, AlInN, AlGaN, AlInGaN, AlN, GaAs, GaP, InP, AlGaAs, AlInGaAs, AlGaInP, InGaAs, InGaAsN, AlInAs, AlInP, AlGaP, InGaP, GaSb, InSb, InAs, InAsSb, AlGaSb, AlSb, InGaSb, AlGaAsSb, InGaAsSb, SiC, Ga2O3, and BN; The substrate includes sapphire, silicon, Ge, SiC, AlN, GaN, GaAs, InP, InAs, GaSb, sapphire / SiO2 composite substrate, Mo, TiW, CuW, Cu, sapphire / AlN composite substrate, diamond, sapphire / SiN x , sapphire / SiO2 / SiN x Composite substrate, any one of magnesium aluminum spinel MgAl2O4, MgO, ZnO, ZrB2, LiAlO2 and LiGaO2 composite substrates.

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