Self-adaptive bias broadband high-power amplifier

Abstract

The invention discloses an adaptive bias broadband high-power amplifier, and relates to the technical field of radio frequency integrated circuits. The amplifier comprises an active self-adaptive bias module, an amplifier driving stage module, an inter-stage high-coupling-coefficient transformer matching network module, an amplifier power stage module and a high-power electrostatic discharge output matching common module. Through the active self-adaptive bias module, the interstage high-coupling-coefficient transformer matching network module and the high-power electrostatic discharge output matching common module, combined innovation of self-adaptive bias, broadband and electrostatic discharge multiplexing of the high-power amplifier is realized; a high-power amplifier with the performance superior to that of a traditional gallium arsenide process and the cost directly close to that of a CMOS is realized on a silicon-based platform, and a core technical support is provided for a 5G / 6G radio frequency chip.

Description

TECHNICAL FIELD

[0001] The present application relates to the technical field of radio frequency integrated circuits, and particularly relates to a wideband high-power amplifier with adaptive bias. BACKGROUND

[0002] With the requirement of 5G communication for base station power consumption and integration, the high-power amplifier of traditional gallium arsenide process faces the following problems: high power consumption problem, the power consumption of the high-power amplifier of the traditional gallium arsenide process is difficult to meet the low energy consumption demand of the 5G base station; integration difficulty problem, the gallium arsenide chip needs to be co-packaged with the silicon-based control circuit, increasing the area and cost; bandwidth limitation problem, the traditional interstage matching network is difficult to realize more than 92% super wideband impedance matching; electrostatic discharge protection defect problem, a large number of diodes need to be stacked under large signal swing, resulting in large area occupation and decreased anti-static performance.

[0003] However, the existing high-power amplifier of silicon-based heterojunction bipolar transistor can reduce the cost, but has problems such as lack of adaptive bias and insufficient wideband matching. Therefore, there is an urgent need for a high-power amplifier of silicon-based heterojunction bipolar transistor with integrated adaptive bias, wideband matching and efficient electrostatic discharge. SUMMARY

[0004] In view of the above problems in the prior art, the present application provides a wideband high-power amplifier with adaptive bias.

[0005] In order to achieve the above application purposes, the technical scheme adopted by the present application is as follows: A wideband high-power amplifier with adaptive bias comprises an active adaptive bias module, an amplifier driving stage module, an interstage high-coupling coefficient transformer matching network module, an amplifier power stage module and a high-power electrostatic discharge output matching common module. The active adaptive bias module comprises a first working frequency band low dropout linear voltage regulator set, a second working frequency band low dropout linear voltage regulator set, an amplifier driving stage active bias sub-module, and an amplifier power stage active bias sub-module; a first port of the first working frequency band low dropout linear voltage regulator set and a first port of the second working frequency band low dropout linear voltage regulator set are connected to a frequency band selection signal input end; a second port of the first working frequency band low dropout linear voltage regulator set and a second port of the second working frequency band low dropout linear voltage regulator set are connected to a first port of the amplifier driving stage module; a third port of the first working frequency band low dropout linear voltage regulator set and a third port of the second working frequency band low dropout linear voltage regulator set are connected to a first port of the amplifier power stage module; the amplifier driving stage active bias sub-module is connected to a radio frequency signal input end; and the amplifier power stage active bias sub-module is connected to a second port of the inter-stage high coupling coefficient transformer matching network module; the active adaptive bias module is used for adaptively switching the bias voltage of the amplifier driving stage module and the amplifier power stage module according to the working frequency band of the radio frequency signal input end. A second port of the amplifier driving stage module is connected to the radio frequency signal input end; and a third port of the amplifier driving stage module is connected to a first port of the inter-stage high coupling coefficient transformer matching network module. A second port of the inter-stage high coupling coefficient transformer matching network module is connected to a second port of the amplifier power stage module; and the inter-stage high coupling coefficient transformer matching network module is used for performing impedance matching between the amplifier driving stage module and the amplifier power stage module within a wide band. A second port of the amplifier power stage module is connected to a second port of the inter-stage high coupling coefficient transformer matching network module; and a third port of the amplifier power stage module is connected to a first port of the high-power electrostatic discharge output matching common module. A second port of the high-power electrostatic discharge output matching common module is connected to a radio frequency signal output end; and the high-power electrostatic discharge output matching common module is used for multiplexing electrostatic discharge protection and radio frequency choke through a transformer secondary side inductor and an additional inductor.

[0006] Further, the first working frequency band low dropout linear voltage regulator set and the second working frequency band low dropout linear voltage regulator set each comprise two identical low dropout linear voltage regulator set substructures; input ends of the two identical low dropout linear voltage regulator set substructures are used as the first port of the low dropout linear voltage regulator set; output ends of the two identical low dropout linear voltage regulator set substructures are used as the second port and the third port of the low dropout linear voltage regulator set, and are connected to the first port of the amplifier driving stage module and the first port of the amplifier power stage module, respectively.

[0007] Further, the low dropout linear voltage regulator group substructure comprises an error amplifier, a first resistor, a second resistor, a first MOS tube and a second MOS tube; the negative input end of the error amplifier is connected with a band gap reference voltage, the positive input end of the error amplifier is connected with one end of the first resistor and one end of the second resistor, the output end of the error amplifier is connected with the gate of the first MOS tube, the other end of the first resistor is grounded, the other end of the second resistor is connected with the drain of the first MOS tube, the source of the first MOS tube and the first power port of the error amplifier are connected with the drain of the second MOS tube, the second power port of the error amplifier is grounded, and the source of the second MOS tube is connected with a chip working voltage, and the gate of the second MOS tube serves as the input end of the low dropout linear voltage regulator group substructure.

[0008] Further, the third MOS tube working in a linear region is arranged in parallel on the second resistor in the first working frequency band low dropout linear voltage regulator group and the second working frequency band low dropout linear voltage regulator group, the source and the drain of the third MOS tube are connected with two ends of the second resistor respectively, when one of the first working frequency band low dropout linear voltage regulator group and the second working frequency band low dropout linear voltage regulator group fails, the alternative bias voltage is output by adjusting the gate tuning voltage of the third MOS tube in the other group.

[0009] Further, the amplifier driving stage module comprises a first BJT tube and a second BJT tube; the gate of the first BJT tube serves as the first port of the amplifier driving stage module, the drain of the first BJT tube serves as the third port of the amplifier driving stage module, the source of the first BJT tube is connected with the drain of the second BJT tube, the source of the second BJT tube is grounded, and the gate of the second BJT tube serves as the second port of the amplifier driving stage module.

[0010] Further, the inter-stage high coupling coefficient transformer matching network module comprises a first inductor, a second inductor, a first capacitor and a second capacitor; the first inductor and the second inductor adopt a double-layer metal overlapping design; one end of the first inductor serves as the first port of the inter-stage high coupling coefficient transformer matching network module, the other end of the first inductor is connected with one end of the first capacitor, the other end of the first capacitor is grounded, one end of the second inductor serves as the second port of the inter-stage high coupling coefficient transformer matching network module, the other end of the second inductor is connected with one end of the second capacitor, and the other end of the second capacitor is grounded.

[0011] Further, the amplifier power stage module comprises a third BJT tube and a fourth BJT tube; the gate of the third BJT tube serves as the first port of the amplifier power stage module, the drain of the third BJT tube serves as the third port of the amplifier power stage module, the source of the third BJT tube is connected with the drain of the fourth BJT tube, the source of the fourth BJT tube is grounded, and the gate of the fourth BJT tube serves as the second port of the amplifier power stage module.

[0012] Further, the high-power electrostatic discharge output matching common module comprises a third inductor, a fourth inductor, a fifth inductor, a third capacitor, a fourth capacitor and an electrostatic protector; the third inductor and the fourth inductor adopt a double-layer metal overlapping design; one end of the third inductor serves as a first port of the high-power electrostatic discharge output matching common module, the other end of the third inductor is connected to one end of the third capacitor, the other end of the third capacitor is grounded, one end of the fourth inductor serves as a second port of the high-power electrostatic discharge output matching common module, the other end of the fourth inductor is connected to one end of the fourth capacitor and one end of the electrostatic protector through the fifth inductor, and the other end of the electrostatic protector and the other end of the fourth capacitor are both grounded.

[0013] The present application has the following advantages: (1) The active adaptive bias module is arranged, so that the debugging cost caused by the flip chip is reduced, and the adaptive adjustment of the performance under different working frequencies is realized. (2) The inter-stage high-coupling-coefficient transformer matching network module and the high-power electrostatic discharge output matching common module are arranged, so that the impedance matching and the anti-static performance during high-power working are considered, and the advantages of high efficiency, high output power, small area and low power consumption are achieved. BRIEF DESCRIPTION OF DRAWINGS

[0014] Figure 1 It is a structure schematic diagram of a wideband high-power amplifier with adaptive bias. Figure 2 It is a working principle schematic diagram of a frequency band selection signal. Figure 3 It is a double-layer metal overlapping design schematic diagram of a first inductor and a second inductor. DETAILED DESCRIPTION

[0015] The specific embodiments of the present application are described below, so that those skilled in the art can understand the present application, but it should be clear that the present application is not limited to the scope of the specific embodiments, and for those skilled in the art, it is obvious that various changes are within the spirit and scope of the present application defined and limited by the appended claims, and all the inventions utilizing the concept of the present application are within the scope of protection.

[0016] As shown in the drawings, Figure 1 A wideband high-power amplifier with adaptive bias comprises an active adaptive bias module, an amplifier driving stage module, an inter-stage high-coupling-coefficient transformer matching network module, an amplifier power stage module and a high-power electrostatic discharge output matching common module.

[0017] In an optional embodiment of the present application, the active adaptive biasing module comprises a first working frequency band low dropout linear voltage regulator set, a second working frequency band low dropout linear voltage regulator set, an amplifier driving stage active biasing sub-module and an amplifier power stage active biasing sub-module; the first port of the first working frequency band low dropout linear voltage regulator set and the first port of the second working frequency band low dropout linear voltage regulator set are both connected to a frequency band selection signal input end, the second port of the first working frequency band low dropout linear voltage regulator set and the second port of the second working frequency band low dropout linear voltage regulator set are both connected to a first port of an amplifier driving stage module, the third port of the first working frequency band low dropout linear voltage regulator set and the third port of the second working frequency band low dropout linear voltage regulator set are both connected to a first port of an amplifier power stage module, the amplifier driving stage active biasing sub-module is connected to a radio frequency signal input end, and the amplifier power stage active biasing sub-module is connected to a second port of an inter-stage high coupling coefficient transformer matching network module; the active adaptive biasing module is used for adaptively switching the biasing voltage of the amplifier driving stage module and the amplifier power stage module according to the working frequency band of the radio frequency signal input end.

[0018] Specifically, in the active adaptive biasing module, the biasing voltage of the amplifier driving stage module and the amplifier power stage module is adaptively switched according to the working frequency band of the radio frequency signal input end, specifically: the frequency band selection signal input end is adaptively switched to input a frequency band selection signal according to the working frequency band of the radio frequency signal input end, the frequency band selection signal generates a frequency band enable signal and a frequency band disable signal, the frequency band enable signal acts on the first working frequency band low dropout linear voltage regulator set, and the frequency band disable signal acts on the second working frequency band low dropout linear voltage regulator set.

[0019] As shown in Figure 2 when the frequency band selection signal is 1 (high), the second MOS tube of the first working frequency band low dropout linear voltage regulator set is turned on, the first working frequency band low dropout linear voltage regulator set normally works, and the first working frequency band biasing voltage is output to the amplifier driving stage module and the amplifier power stage module; when the frequency band selection signal is 0 (low), the second MOS tube of the second working frequency band low dropout linear voltage regulator set is turned on, the second working frequency band low dropout linear voltage regulator set normally works, and the second working frequency band biasing voltage is output to the amplifier driving stage module and the amplifier power stage module.

[0020] The first working frequency band low dropout linear voltage regulator set and the second working frequency band low dropout linear voltage regulator set both comprise two identical low dropout linear voltage regulator set substructures, the input ends of the two identical low dropout linear voltage regulator set substructures both serve as the first port of the low dropout linear voltage regulator set, the output ends of the two identical low dropout linear voltage regulator set substructures respectively serve as the second port and the third port of the low dropout linear voltage regulator set, and are respectively connected to the first port of the amplifier driving stage module and the first port of the amplifier power stage module.

[0021] The low-dropout linear voltage regulator group substructure comprises an error amplifier, a first resistor, a second resistor, a first MOS tube and a second MOS tube; the negative input end of the error amplifier is connected with a band gap reference voltage, the positive input end of the error amplifier is simultaneously connected with one end of the first resistor and one end of the second resistor, the output end of the error amplifier is connected with the gate of the first MOS tube, the other end of the first resistor is grounded, the other end of the second resistor is connected with the drain of the first MOS tube, the source of the first MOS tube and the first power port of the error amplifier are connected with the drain of the second MOS tube, the second power port of the error amplifier is grounded, the source of the second MOS tube is connected with a chip working voltage, and the gate of the second MOS tube serves as the input end of the low-dropout linear voltage regulator group substructure.

[0022] Specifically, in the low-dropout linear voltage regulator group substructure in the first working frequency band low-dropout linear voltage regulator group, the source of the second MOS tube is connected with a chip working voltage VDD1; in the low-dropout linear voltage regulator group substructure in the second working frequency band low-dropout linear voltage regulator group, the source of the second MOS tube is connected with a chip working voltage VDD2.

[0023] The third MOS tube working in a linear region is arranged in parallel on the second resistor in the first working frequency band low-dropout linear voltage regulator group and the second working frequency band low-dropout linear voltage regulator group, the source and the drain of the third MOS tube are connected with two ends of the second resistor respectively, when one of the first working frequency band low-dropout linear voltage regulator group and the second working frequency band low-dropout linear voltage regulator group fails, the third MOS tube in the other group is adjusted to output a substitute bias voltage.

[0024] Specifically, the structures of the amplifier driving stage active bias sub-module and the amplifier power stage active bias sub-module are the same, and each comprises three BJT tubes, two resistors and one capacitor, and the specific circuit structure of the amplifier driving stage active bias sub-module and the amplifier power stage active bias sub-module is as shown in Figure 1 .

[0025] In an optional embodiment of the present application, the second port of the amplifier driving stage module is connected with a radio frequency signal input end, and the third port of the amplifier driving stage module is connected with the first port of the inter-stage high coupling coefficient transformer matching network module. The amplifier driving stage module is used for amplifying the input radio frequency signal, providing sufficient driving capability for the amplifier power stage module, and converting the high output impedance of the previous stage circuit into low output impedance to drive the high input impedance of the amplifier power stage module.

[0026] The amplifier driving stage module comprises a first BJT tube and a second BJT tube; a gate of the first BJT tube is used as a first port of the amplifier driving stage module, a drain of the first BJT tube is used as a third port of the amplifier driving stage module, a source of the first BJT tube is connected to a drain of the second BJT tube, a source of the second BJT tube is grounded, and a gate of the second BJT tube is used as a second port of the amplifier driving stage module.

[0027] In an optional embodiment of the present application, the second port of the inter-stage high-coupling-coefficient transformer matching network module is connected to the second port of the amplifier power stage module; and the inter-stage high-coupling-coefficient transformer matching network module is used for impedance matching between the amplifier driving stage module and the amplifier power stage module within a wide band.

[0028] The inter-stage high-coupling-coefficient transformer matching network module comprises a first inductor, a second inductor, a first capacitor and a second capacitor; the first inductor and the second inductor adopt a double-layer metal overlapping design; one end of the first inductor is used as a first port of the inter-stage high-coupling-coefficient transformer matching network module, the other end of the first inductor is connected to one end of the first capacitor, the other end of the first capacitor is grounded, one end of the second inductor is used as a second port of the inter-stage high-coupling-coefficient transformer matching network module, the other end of the second inductor is connected to one end of the second capacitor, and the other end of the second capacitor is grounded.

[0029] As shown in Figure 3 The present application provides a double-layer metal overlapping design schematic diagram of the first inductor and the second inductor, and the first inductor and the second inductor constitute a transformer mutual inductance structure; since the first inductor and the second inductor are placed in two layers and overlap, the upper metal part is projected to the lower layer, and a very high coupling coefficient can be achieved; and the present application adds the first capacitor and the second capacitor in the inter-stage high-coupling-coefficient transformer matching network module, so that the impedance mismatch caused by the asymmetric inductor can be solved.

[0030] In an optional embodiment of the present application, the second port of the amplifier power stage module is connected to the second port of the inter-stage high-coupling-coefficient transformer matching network module, and the third port of the amplifier power stage module is connected to the first port of the high-power electrostatic discharge output matching common module; and the amplifier power stage module is used for amplifying the radio frequency signal output by the amplifier driving stage module to meet the base station transmission requirement.

[0031] The amplifier power stage module comprises a third BJT tube and a fourth BJT tube; a gate of the third BJT tube is used as a first port of the amplifier power stage module, a drain of the third BJT tube is used as a third port of the amplifier power stage module, a source of the third BJT tube is connected to a drain of the fourth BJT tube, a source of the fourth BJT tube is grounded, and a gate of the fourth BJT tube is used as a second port of the amplifier power stage module.

[0032] In an alternative embodiment of the present application, the second port of the high-power electrostatic discharge output matching common module is connected to an RF signal output end; the high-power electrostatic discharge output matching common module is used to realize electrostatic discharge protection and RF choke through the transformer secondary side inductor and the additional inductor, so as to realize load matching and maximize power transmission efficiency.

[0033] The high-power electrostatic discharge output matching common module comprises a third inductor, a fourth inductor, a fifth inductor, a third capacitor, a fourth capacitor and an electrostatic protector; the third inductor and the fourth inductor adopt a double-layer metal overlapping design; one end of the third inductor is used as a first port of the high-power electrostatic discharge output matching common module, the other end of the third inductor is connected to one end of the third capacitor, the other end of the third capacitor is grounded, one end of the fourth inductor is used as a second port of the high-power electrostatic discharge output matching common module, the other end of the fourth inductor is connected to one end of the fourth capacitor and one end of the electrostatic protector through the fifth inductor, and the other end of the electrostatic protector and the other end of the fourth capacitor are both grounded.

[0034] The present application is described in reference to flowcharts and / or block diagrams of the methods, devices (systems) and computer program products according to embodiments of the present application. It should be understood that each flow and / or block in the flowcharts and / or block diagrams, and the combination of flows and / or blocks in the flowcharts and / or block diagrams can be implemented by computer program instructions. These computer program instructions can be provided to a processor of a general-purpose computer, a special-purpose computer, an embedded processor, or other programmable data processing apparatus to produce a machine, so that the instructions executed by the processor of the computer or other programmable data processing apparatus generate a means for implementing the functions specified in the flowcharts and / or block diagrams. Figure 1 The functions specified in one or more flows and / or blocks. Figure 1 The functions specified in one or more flows and / or blocks.

[0035] These computer program instructions can also be stored in a computer-readable memory capable of guiding the computer or other programmable data processing apparatus to work in a specific way, so that the instructions stored in the computer-readable memory produce a product including instruction means, which implements the functions specified in the flowcharts and / or block diagrams. Figure 1 The functions specified in one or more flows and / or blocks. Figure 1 The functions specified in one or more flows and / or blocks.

[0036] These computer program instructions can also be loaded into a computer or other programmable data processing apparatus, so that a series of operation steps are performed on the computer or other programmable data processing apparatus to produce a computer-implemented process, so that the instructions executed on the computer or other programmable data processing apparatus provide a means for implementing the functions specified in the flowcharts and / or block diagrams. Figure 1 The functions specified in one or more flows and / or blocks. Figure 1 The functions specified in one or more flows and / or blocks.

[0037] The principles and implementation manners of the present application are described by using specific examples in the present application. The above examples are only used for helping to understand the method of the present application and its core idea. Meanwhile, for the ordinary skilled in the art, according to the idea of the present application, the specific implementation manners and application ranges can be changed. In summary, the content of the present description should not be understood as a limitation on the present application.

[0038] Those skilled in the art will understand that the examples described herein are for the purpose of understanding the principles of the present application and should be understood as not limiting the scope of protection of the present application. Those skilled in the art can make various other specific modifications and combinations according to the technical inspiration disclosed in the present application without departing from the essence of the present application, and these modifications and combinations are still within the scope of protection of the present application.

Claims

1. A self-biased wideband high power amplifier characterized by, The active adaptive bias module, the amplifier driving stage module, the inter-stage high coupling coefficient transformer matching network module, the amplifier power stage module and the high-power electrostatic discharge output matching common module are connected in series. The active adaptive bias module includes a first working frequency band low dropout linear voltage regulator set, a second working frequency band low dropout linear voltage regulator set, an amplifier driving stage active bias sub-module and an amplifier power stage active bias sub-module; the first port of the first working frequency band low dropout linear voltage regulator set and the first port of the second working frequency band low dropout linear voltage regulator set are connected to a frequency band selection signal input end; the second port of the first working frequency band low dropout linear voltage regulator set and the second port of the second working frequency band low dropout linear voltage regulator set are connected to a first port of the amplifier driving stage module; the third port of the first working frequency band low dropout linear voltage regulator set and the third port of the second working frequency band low dropout linear voltage regulator set are connected to a first port of the amplifier power stage module; the amplifier driving stage active bias sub-module is connected to a radio frequency signal input end; and the amplifier power stage active bias sub-module is connected to a second port of the inter-stage high coupling coefficient transformer matching network module; the active adaptive bias module is used for adaptively switching the bias voltage of the amplifier driving stage module and the amplifier power stage module according to the working frequency band of the radio frequency signal input end. The second port of the amplifier driving stage module is connected to the radio frequency signal input end; and the third port of the amplifier driving stage module is connected to a first port of the inter-stage high coupling coefficient transformer matching network module. The second port of the inter-stage high coupling coefficient transformer matching network module is connected to a second port of the amplifier power stage module; and the inter-stage high coupling coefficient transformer matching network module is used for performing impedance matching between the amplifier driving stage module and the amplifier power stage module within a wide band. The second port of the amplifier power stage module is connected to the second port of the inter-stage high coupling coefficient transformer matching network module; and the third port of the amplifier power stage module is connected to a first port of the high-power electrostatic discharge output matching common module. The second port of the high-power electrostatic discharge output matching common module is connected to a radio frequency signal output end; and the high-power electrostatic discharge output matching common module is used for multiplexing electrostatic discharge protection and radio frequency choke through a transformer secondary side inductor and an additional inductor.

2. The self-biased wideband high power amplifier of claim 1, wherein, The first working frequency band low dropout linear voltage regulator set and the second working frequency band low dropout linear voltage regulator set each include two identical low dropout linear voltage regulator set substructures; the input ends of the two identical low dropout linear voltage regulator set substructures are used as the first ports of the low dropout linear voltage regulator sets; the output ends of the two identical low dropout linear voltage regulator set substructures are used as the second port and the third port of the low dropout linear voltage regulator sets respectively, and are connected to the first port of the amplifier driving stage module and the first port of the amplifier power stage module respectively.

3. The self-biased wideband high power amplifier of claim 2, wherein, The low-dropout linear voltage regulator group substructure comprises an error amplifier, a first resistor, a second resistor, a first MOS tube and a second MOS tube; the negative input end of the error amplifier is connected with a band gap reference voltage, the positive input end of the error amplifier is simultaneously connected with one end of the first resistor and one end of the second resistor, the output end of the error amplifier is connected with the gate of the first MOS tube, the other end of the first resistor is grounded, the other end of the second resistor is connected with the drain of the first MOS tube, the source of the first MOS tube and the first power port of the error amplifier are connected with the drain of the second MOS tube, the second power port of the error amplifier is grounded, the source of the second MOS tube is connected with a chip working voltage, and the gate of the second MOS tube serves as the input end of the low-dropout linear voltage regulator group substructure.

4. The self-biased wideband high power amplifier of claim 3, wherein, A third MOS tube working in a linear region is arranged in parallel on the second resistor in the first working frequency band low-dropout linear voltage regulator group and the second working frequency band low-dropout linear voltage regulator group, the source and the drain of the third MOS tube are respectively connected with two ends of the second resistor, when one of the first working frequency band low-dropout linear voltage regulator group and the second working frequency band low-dropout linear voltage regulator group fails, the third MOS tube in the other group is adjusted to output a substitute bias voltage.

5. The self-biased wideband high power amplifier of claim 1, wherein, The amplifier driving stage module comprises a first BJT tube and a second BJT tube; the gate of the first BJT tube serves as the first port of the amplifier driving stage module, the drain of the first BJT tube serves as the third port of the amplifier driving stage module, the source of the first BJT tube is connected with the drain of the second BJT tube, the source of the second BJT tube is grounded, and the gate of the second BJT tube serves as the second port of the amplifier driving stage module.

6. The self-biased wideband high power amplifier of claim 1, wherein, The inter-stage high coupling coefficient transformer matching network module comprises a first inductor, a second inductor, a first capacitor and a second capacitor; the first inductor and the second inductor adopt a double-layer metal overlapping design; one end of the first inductor serves as the first port of the inter-stage high coupling coefficient transformer matching network module, the other end of the first inductor is connected with one end of the first capacitor, the other end of the first capacitor is grounded, one end of the second inductor serves as the second port of the inter-stage high coupling coefficient transformer matching network module, the other end of the second inductor is connected with one end of the second capacitor, and the other end of the second capacitor is grounded.

7. The self-biased wideband high power amplifier of claim 1, wherein, The amplifier power stage module comprises a third BJT tube and a fourth BJT tube; the gate of the third BJT tube serves as the first port of the amplifier power stage module, the drain of the third BJT tube serves as the third port of the amplifier power stage module, the source of the third BJT tube is connected with the drain of the fourth BJT tube, the source of the fourth BJT tube is grounded, and the gate of the fourth BJT tube serves as the second port of the amplifier power stage module.

8. The self-biased wideband high power amplifier of claim 1, wherein, The high-power electrostatic discharge output matching common module comprises a third inductor, a fourth inductor, a fifth inductor, a third capacitor, a fourth capacitor and an electrostatic protector; the third inductor and the fourth inductor adopt a double-layer metal overlapping design; one end of the third inductor serves as a first port of the high-power electrostatic discharge output matching common module, the other end of the third inductor is connected to one end of the third capacitor, the other end of the third capacitor is grounded, one end of the fourth inductor serves as a second port of the high-power electrostatic discharge output matching common module, the other end of the fourth inductor is connected to one end of the fourth capacitor and one end of the electrostatic protector through the fifth inductor, and the other end of the electrostatic protector and the other end of the fourth capacitor are both grounded.

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