Atomic layer deposition apparatus

By setting heating modules and purge channels in the inlet and outlet areas of the atomic layer deposition equipment, the problems of uneven film formation on the substrate and condensation of process gases were solved, thereby achieving uniform surface temperature of the substrate and improving film quality.

CN121472820BActive Publication Date: 2026-03-31SHENZHEN YUANSU OPTOELECTRONICS TECH CO LTD
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Patent Information

Application Number
CN202610008542.6
Authority / Receiving Office
CN · China
Patent Type
Patents(China)
Current Assignee / Owner
Filing Date
2026-01-06
Publication Date
2026-03-31
Estimated Expiration
2046-01-06

AI Technical Summary

Technical Problem

The problems of uneven film formation on substrates and poor film quality in atomic layer deposition equipment, especially the inconsistent film formation caused by uneven temperature in the inlet and outlet areas and the contamination of powder particles formed by the condensation of process gases.

Method used

Heating modules are installed at the inlet and outlet of the reaction chamber to release heat to compensate for temperature defects caused by rapid heat dissipation and maintain a consistent temperature in the substrate inlet and outlet areas. At the same time, purge gas is used to prevent process gas condensation. Multiple heating elements and purge channels are designed to improve heating efficiency and gas removal effect.

Benefits of technology

This improved the uniformity of film formation on the substrate and the quality of the film, reduced the probability of process gas condensation forming powder particles, and improved the uniformity and cleanliness of deposition on the substrate surface.

✦ Generated by Eureka AI based on patent content.
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Abstract

The application discloses an atomic layer deposition equipment, which comprises a reaction chamber, a reaction module and a heating module. The reaction chamber is provided with an inlet and an outlet at two ends respectively. The heating module is located in the reaction chamber and is arranged at one end of the reaction module facing the inlet and one end of the reaction module facing the outlet. The heating module can release heat. The areas close to the inlet and the outlet of the reaction chamber are heated by the heating module to overcome the defect that the temperature of the outlet area is relatively low due to fast heat dissipation, make up for the heat loss of the outlet area, and the heat released by the heating module can be transmitted to the substrate entering the reaction chamber, so that the temperature of each area of the substrate during the movement process is consistent, the uniformity of the film thickness of the substrate is improved, and the film forming quality is improved. And under the heating action of the heating module on the outlet area, the temperature of the outlet area is increased, and the process gas of the outlet area is not easy to condense with the movement of the substrate, so that the probability of the process gas forming powder particles to pollute the substrate is reduced.
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