Output drive circuit
By designing the feedback network and bias network, the NMOS transistor operates in a critical saturation state, stabilizing the drain-source voltage. This solves the voltage imbalance problem between high-frequency and low-frequency signals in the output drive circuit, improving the reliability and bandwidth of the circuit.
Patent Information
- Authority / Receiving Office
- CN · China
- Patent Type
- Patents(China)
- Current Assignee / Owner
- XIAMEN UX IC CO LTD
- Filing Date
- 2026-02-10
- Publication Date
- 2026-06-09
AI Technical Summary
The voltage imbalance between high-frequency and low-frequency signal operating states in the existing output drive circuit causes impedance changes in the NMOS transistor, resulting in a significant increase in the drain-source voltage of the thin oxide layer NMOS transistor, which poses a risk of breakdown and affects circuit reliability.
By employing a feedback network and a bias network design, the NMOS transistor operates in a critical saturation state, and a stable drain-source voltage is set through a feedback resistor to ensure that the NMOS transistor remains constant at different frequencies, thus avoiding breakdown.
It improves the reliability of the output drive circuit, expands the output swing and enhances the bandwidth, ensuring that the NMOS transistor is not broken down at different frequencies.
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Figure CN121690181B_ABST
Abstract
Citation Information
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