Hole transport layer, perovskite solar cell and preparation method

By doping 3,5-bis(trifluoromethylphenylhydrazine) hydrochloride into a self-assembled monolayer, the hole transport layer and thin film quality of perovskite solar cells were optimized, solving the wettability and interface defects problems of traditional SAMs in perovskite solar cells, and achieving high-efficiency photoelectric conversion and improved stability.

CN121908732APending Publication Date: 2026-04-21HUZHOU QUAIL FIRE PHOTOELECTRIC CO LTD
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Patent Information

Application Number
CN202610116572.9
Authority / Receiving Office
CN · China
Patent Type
Applications(China)
Current Assignee / Owner
Filing Date
2026-01-28
Publication Date
2026-04-21

AI Technical Summary

Technical Problem

Traditional self-assembled monolayers (SAMs) in perovskite solar cells suffer from poor wettability, uneven coverage, and numerous interface defects, resulting in poor film quality and affecting cell efficiency and stability. In particular, interface losses are severe in tandem cells.

Method used

By employing co-self-assembled monolayer (co-SAMs) technology, 3,5-bis(trifluoromethylphenylhydrazine) hydrochloride is doped into the self-assembled monolayer. Combined with specific process parameters such as spin coating, vacuum evaporation and annealing, a high-quality hole transport layer and perovskite thin film are formed, thereby optimizing interface properties and film crystallization quality.

Benefits of technology

This method improves the photoelectric conversion efficiency and stability of perovskite solar cells, reduces interfacial recombination, increases open-circuit voltage and fill factor, and solves the efficiency and stability bottlenecks of tandem cells, showing promising prospects for industrial application.

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Abstract

The invention relates to a hole transport layer, a perovskite solar cell and a preparation method, and the method sequentially comprises the following steps: providing a substrate, and preparing a composite hole transport layer on the substrate; depositing an inorganic salt thin film on the composite hole transport layer by adopting a vacuum evaporation method; spin-coating an organic salt solution on the inorganic salt thin film, and then annealing to form a perovskite light absorption layer; preparing a passivation layer on the perovskite light absorption layer; and preparing an electron transport layer, a hole blocking layer and a back electrode in sequence to complete cell preparation. According to the invention, by introducing a'common SAMs' technology (that is, 3, 5-bis (trifluoromethyl) phenylhydrazine hydrochloride is doped into Me-4PACz), the surface property of the hole transport layer is fundamentally improved, and the interface property and the crystallization quality of the thin film are optimized.
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