Perovskite light-emitting-photovoltaic dual-function device and preparation method thereof

Abstract

The invention belongs to the technical field of photoelectric materials and devices, and particularly relates to a perovskite light-emitting-photovoltaic dual-function device and a preparation method thereof. The preparation method comprises the following steps: sequentially preparing an electron transport layer, a perovskite light-emitting-photovoltaic active layer, a hole transport layer and a top electrode on a transparent conductive substrate; the method is characterized in that when the perovskite light-emitting-photovoltaic active layer is prepared, specific functional molecules (such as beta-alanine, 5-amino valeric acid, phenylethylamine iodide, sulfaguanidine and the like) are introduced into a perovskite precursor to cooperatively regulate and control crystallization kinetics of perovskite, defects are passivated, and the perovskite light-emitting-photovoltaic active layer is prepared. And a microstructure (such as an embedded submicron cavity or a vertical single-layer crystal grain) which is beneficial to light management and carrier bidirectional transmission is guided to be formed. The device manufactured by the method can work as a high-efficiency light-emitting diode (EQEgt, 25%) and also can work as a high-efficiency solar cell (PCEgt, 15%), bidirectional high performance of optical-electric conversion is realized, and an effective scheme is provided for developing a novel integrated optoelectronic system.

Description

Technical Field

[0001] This invention belongs to the field of optoelectronic materials and devices technology, and relates to a perovskite light-emitting-photovoltaic dual-functional device and its preparation method. Specifically, it relates to a perovskite dual-functional device with both high-efficiency electroluminescence (LED) and photovoltaic (PV) performance and its preparation method. Background Technology

[0002] Metal halide perovskite materials have shown great potential in the fields of light-emitting diodes (PeLEDs) and solar cells (PSCs) due to their excellent photoelectric properties (such as high photoluminescence quantum yield, long carrier diffusion length, and tunable bandgap). Theoretically, based on the principle of meticulous balance, a high-efficiency solar cell is also an excellent light-emitting diode (PV-EL reciprocity). Therefore, developing monolithic integrated devices that combine light emission and photovoltaic functions is of great significance for the development of novel compact optoelectronic systems such as self-powered displays, smart lighting, and optical communications.

[0003] However, realizing high-performance perovskite bifunctional devices faces numerous challenges. PeLEDs typically require smaller grain sizes to enhance quantum confinement effects and light extraction efficiency, and to optimize carrier injection balance; while PSCs tend to have larger grain sizes to reduce nonradiative recombination at grain boundaries and maximize light absorption. These two operating modes place almost contradictory requirements on device structures (such as carrier transport layers), active layer morphology, and interface energy levels. For example, photovoltaic devices extract photogenerated carriers to electrodes through the transport layer, while light-emitting devices inject electrons and holes into the perovskite active layer through the transport layer for recombination.

[0004] Based on this, the present invention develops a universal method that can synergistically optimize the grain structure, interface properties and carrier dynamics of perovskite thin films, thereby achieving high-efficiency light emission and photovoltaic performance in the same device. Summary of the Invention

[0005] In view of this, the purpose of this invention is to overcome the shortcomings of the prior art and provide a perovskite luminescent-photovoltaic bifunctional device and its fabrication method. This method utilizes molecular design strategies to regulate the crystallization kinetics and interface properties of perovskite, constructing a vertically interconnected structure in the active layer that facilitates bidirectional carrier transport (injection and extraction), thereby achieving high performance in both luminescent and photovoltaic modes.

[0006] To achieve the above objectives, the present invention adopts the following technical solution:

[0007] The first technical objective of this invention is to provide a perovskite light-emitting and photovoltaic dual-functional device, the device comprising, from bottom to top: Transparent conductive substrate; Electron transport layer; Perovskite luminescent-photovoltaic active layer, containing functional molecules; Hole transport layer; Top electrode; The functional molecules are used to regulate the crystal morphology and / or defect states of the perovskite luminescent-photovoltaic active layer, so that the device has a peak external quantum efficiency of not less than 25% in electroluminescent mode and a photoelectric conversion efficiency of not less than 15% in photovoltaic mode.

[0008] Preferably, the functional molecule is selected from at least one of amino acid molecules, organic ammonium salt molecules, and molecules containing both sulfonamide and guanidine groups; the amino acid molecules include β-alanine, 5-aminovaleric acid, and serine; the organic ammonium salt molecules are phenylethylamine iodide (PEAI); and the molecules containing both sulfonamide and guanidine groups are sulfanilamide guanidine.

[0009] It should be noted that the perovskite luminescent-photovoltaic active layer contains β-alanine and phenylethylamine iodide (PEAI), and a spontaneously generated embedded submicron cavity structure is formed within the active layer; the perovskite luminescent-photovoltaic active layer contains sulfanilamide guanidine, and the grains of the active layer are arranged in a vertically oriented monolayer with close packing.

[0010] Preferably, the material of the perovskite luminescent-photovoltaic active layer is FAPbI3, and the thickness of the perovskite luminescent-photovoltaic active layer is 150-350 nm.

[0011] Preferably, the electron transport layer is a ZnO nanoparticle layer, and the hole transport layer is Spiro-OMeTAD.

[0012] The second technical objective of this invention is to provide a method for fabricating the perovskite light-emitting and photovoltaic bifunctional device as described above, comprising the following steps: (1) Provide a transparent conductive substrate; (2) An electron transport layer is prepared on the transparent conductive substrate; (3) A perovskite luminescent-photovoltaic active layer containing functional molecules is prepared on the electron transport layer; (4) A hole transport layer is prepared on the perovskite luminescent-photovoltaic active layer; (5) An electrode is fabricated on the hole transport layer; The preparation of the perovskite luminescent-photovoltaic active layer in step (3) includes: introducing functional molecules into the perovskite precursor solution. The functional molecules are selected from at least one of amino acid molecules, organic ammonium salt molecules, and sulfonamide molecules containing specific functional groups (molecules containing both sulfonamide and guanidine groups) to regulate the crystallization process of the perovskite and form a thin film microstructure with vertical orientation, low defect density, and good photon and carrier management.

[0013] Furthermore, the functional molecule is one or more combinations of β-alanine, serine, phenylethylamine iodide (PEAI), 5-aminovaleric acid (5AVA), or sulfaguanidine (SG). When using multiple functional molecules, a synergistic strategy combining bulk doping and surface post-treatment can be employed.

[0014] Furthermore, the functional molecule acts on the perovskite in at least one of the following ways: (1) With lead ions (Pb) in perovskite 2+ Coordination, passivation of surface and grain boundary defects, and reduction of nonradiative recombination.

[0015] (2) With organic cations in perovskite (such as FA) + MA + Hydrogen bonds are formed, which regulate crystal orientation, inhibit ion migration, and improve phase stability.

[0016] (3) Inducing the Ostwald ripening process guides the perovskite grains to recrystallize downwards, spontaneously forming an embedded submicron cavity structure, thereby enhancing the optical output coupling efficiency.

[0017] (4) Through the synergistic effect of its functional groups (such as -SO2-NH-, -NH-C(=NH)-NH2), it reconstructs grain growth, forms a vertically penetrating monolayer grain structure, and constructs a continuous out-of-plane charge transport channel.

[0018] Further, step (3) includes: introducing the functional molecule into the perovskite precursor solution, forming the perovskite luminescent-photovoltaic active layer by spin coating and annealing processes; and the concentration of the perovskite precursor solution is 0.5-0.8 M, and the ratio of FAI to PbI2 is (1.5-2.0):1.

[0019] It should be noted that the solutes in the perovskite precursor solution are FAI and PbI2, the additives are such as β-alanine, 5-aminovaleric acid, phenylethylamine iodide, sulfanilamide, etc., and the solvent is DMSO.

[0020] Furthermore, in step (3), the perovskite luminescent-photovoltaic active layer is FAPbI3-based perovskite with a film thickness of 150-350 nm, preferably about 250-270 nm, to balance the requirements of light absorption and light extraction; and the perovskite grain size is 50-300 nm, which is between the grain size of LEDs and solar cells.

[0021] Further, the electron transport layer in step (2) is a ZnO nanoparticle layer. Preferably, before spin-coating the perovskite precursor solution, a thin film of the functional molecules (such as β-alanine, 5AVA) is first spin-coated onto the ZnO electron transport layer as an interface modification layer to suppress the adverse reaction between ZnO and perovskite and improve the interface contact and energy level matching.

[0022] Furthermore, the hole transport layer in step (4) is Spiro-OMeTAD. Compared with the TFB commonly used in traditional PeLEDs, Spiro-OMeTAD can more effectively balance carrier injection in the luminescent mode and carrier extraction in the photovoltaic mode, and its shallower HOMO level (about -5.23 eV) is more conducive to matching the perovskite valence band and reducing energy loss.

[0023] Furthermore, the perovskite luminescent-photovoltaic active layer has one or a combination of the following characteristics: (1) Self-assembled submicron cavity structures are distributed in the thin film.

[0024] (2) The grains have a significant vertical orientation and are arranged in a single layer.

[0025] Furthermore, in the light-emitting mode, the device exhibits an electroluminescent external quantum efficiency (EQE). EL The peak brightness should be no less than 400 W / s. - ¹ m - ², the start-up voltage is no higher than 1.25 V. In photovoltaic mode, the photoelectric conversion efficiency (PCE) is no less than 15%.

[0026] Compared with the prior art, the beneficial effects of the present invention are: (1) Synergistic molecular design: By introducing multifunctional molecules (such as β-alanine / PEAI combination, 5AVA, serine or sulfanilidine), the morphology regulation, defect passivation, phase stabilization and optical microstructure construction of perovskite grains are realized simultaneously, which solves the contradiction between the different requirements of light emission and photovoltaic performance on thin film structure.

[0027] (2) High-performance dual-function integration: More than 25% external quantum efficiency of electroluminescence and more than 15% photoelectric conversion efficiency were achieved in the same device, verifying and utilizing the PV-EL reciprocity relationship, providing an example for monolithic multifunctional optoelectronic devices.

[0028] (3) Universal process method: This method provides an effective path for fabricating bifunctional devices from high-performance PeLEDs through crystallization engineering and interface engineering. Based on solution spin coating, this method is compatible with large-area fabrication and has good repeatability and stability. Attached Figure Description

[0029] To more clearly illustrate the technical solutions in the embodiments of the present invention or the prior art, the drawings used in the description of the embodiments or the prior art will be briefly introduced below. Obviously, the drawings described below are only embodiments of the present invention. For those skilled in the art, other drawings can be obtained based on the provided drawings without creative effort.

[0030] Figure 1 This is a schematic diagram of the perovskite light-emitting-photovoltaic dual-function device in Embodiment 1 of the present invention.

[0031] Figure 2 This is a scanning electron microscope (SEM) cross-sectional image of the perovskite thin film after β-alanine / PEAI treatment in Example 1 of the present invention.

[0032] Figure 3 This is a SEM image of the perovskite film treated with sulfanilamide guanidine (SG) in Example 2 of the present invention.

[0033] Figure 4 This is a SEM image of the perovskite film treated with 5-aminovaleric acid (5AVA) in Example 3 of the present invention.

[0034] Figure 5 The electroluminescence external quantum efficiency-current density curves of the bifunctional devices prepared in Examples 1, 2 and 3 of this invention are shown.

[0035] Figure 6 The radiance-voltage curves are for the dual-functional devices prepared in Examples 1, 2 and 3 of this invention.

[0036] Figure 7 The current density-voltage curves of the dual-function devices prepared in Examples 1, 2 and 3 of this invention under standard illumination are shown. Detailed Implementation

[0037] The technical solutions in the embodiments of the present invention will be clearly and completely described below. Obviously, the described embodiments are only some embodiments of the present invention, and not all embodiments. Based on the embodiments of the present invention, all other embodiments obtained by those of ordinary skill in the art without creative effort are within the scope of protection of the present invention.

[0038] The term "embodiment" used herein, as an example, is not necessarily to be construed as superior to or better than other embodiments. Performance testing in the embodiments of this application, unless otherwise specified, employs conventional testing methods in the art. It should be understood that the terminology used in this application is merely for describing particular implementations and is not intended to limit the scope of this disclosure.

[0039] Unless otherwise stated, the technical and scientific terms used herein have the same meaning as commonly understood by one of ordinary skill in the art to which this application pertains; other experimental methods and technical means not specifically mentioned herein refer to experimental methods and technical means commonly used by one of ordinary skill in the art.

[0040] In the description of this invention, it should be understood that the terms "middle", "upper", "lower", "rise", "fall", "vertical", "surface", "top", "bottom", "inner", "outer", etc., indicate the orientation or positional relationship based on the orientation or positional relationship shown in the accompanying drawings. They are only for the convenience of describing this invention and simplifying the description, and do not indicate or imply that the device or element referred to must have a specific orientation, or be constructed and operated in a specific orientation. Therefore, they should not be construed as limitations on this invention.

[0041] To better illustrate the content of this application, numerous specific details are provided in the following detailed embodiments. Those skilled in the art should understand that this application can be implemented even without certain specific details. In the embodiments, some methods, means, instruments, and devices well-known to those skilled in the art are not described in detail in order to highlight the main points of this application.

[0042] Without conflict, the technical features disclosed in the embodiments of this application can be combined arbitrarily, and the resulting technical solution belongs to the content disclosed in the embodiments of this application.

[0043] This invention discloses a method for fabricating a perovskite light-emitting and photovoltaic dual-function device.

[0044] To better understand the present invention, the following embodiments are provided for further detailed description of the present invention, but they should not be construed as limiting the present invention. Any non-essential improvements and adjustments made by those skilled in the art based on the above-described invention are also considered to fall within the protection scope of the present invention.

[0045] Example 1: Fabrication of a bifunctional device based on β-alanine / PEAI synergistic processing 1. Clean the patterned ITO glass (sheet resistance 15 Ω / sq) and treat it with UV-O3.

[0046] 2. Spin-coat a ZnO nanoparticle solution (10 mg / mL) onto ITO, and anneal at 4000 rpm for 30 s at 150 ℃ for 30 minutes to form an electron transport layer.

[0047] 3. Preparation of perovskite precursor solution: Dissolve β-alanine, FAI and PbI2 in 1 mL DMF at a molar ratio of 0.2:1.8:1.0 (0.0125 g: 0.2167 g: 0.3227 g) to prepare a 0.7 M solution and stir at 60 °C for 8 h.

[0048] 4. In a nitrogen atmosphere, the above precursor solution was spin-coated onto a ZnO / ITO substrate (4000 rpm, 30 s), and chlorobenzene was added dropwise as an antisolvent 5 s after the start of spin coating. Then, the substrate was annealed at 150 ℃ for 60 s to form the initial perovskite film.

[0049] 5. Post-treatment of PEAI: A PEAI isopropanol solution (6 mg / mL) was spin-coated onto a perovskite film (4000 rpm, 30 s), and annealed at 75 °C for 10 min. This process induces ripening and downward recrystallization, spontaneously forming embedded submicron cavity structures (e.g., Figure 2 As shown in the figure, it also passivates surface defects.

[0050] 6. Spin-coat a chlorobenzene solution (32 mg / mL) of Spiro-OMeTAD as a hole transport layer.

[0051] 7. Sequentially deposit 3 nm MoO in a vacuum evaporation apparatus. x And 80-200 nm Ag was used as the top electrode.

[0052] Performance testing: Luminous properties: such as Figure 5 As shown in Figure a, the device peak EQE EL Reaching 25.5%, with a peak brightness of 487 Wsr. - ¹ m - ², Start-up voltage (at 0.1 W sr) - ¹ m - (2) is 1.15 V.

[0053] Photovoltaic performance: such as Figure 6 As shown in Figure a, under standard AM 1.5G sunlight, the open-circuit voltage of the device ( V OC The voltage is 1.14 V, and the short-circuit current density is ( J SC The efficiency is 22.87 mA / cm², the fill factor (FF) is 52.79%, and the power conversion efficiency (PCE) reaches 13.76%.

[0054] The device demonstrates a significant PV-EL reciprocity relationship.

[0055] Example 2: Fabrication of bifunctional devices based on sulfaguanidine (SG) molecule regulation 1. Clean the patterned ITO glass (sheet resistance 15 Ω / sq) and treat it with UV-O3.

[0056] 2. Spin-coat a ZnO nanoparticle solution (10 mg / mL) and anneal it, as in Example 1.

[0057] 3. Preparation of perovskite precursor solution: Dissolve sulfanilamide guanidine, FAI and PbI2 in 1 mL DMF at a molar ratio of 0.5:1.8:1.0 (0.0749 g:0.2167 g:0.3227 g) to prepare a 0.7 M solution and stir at 60 °C for 8 h.

[0058] 4. Under a nitrogen atmosphere, the above precursor solution was spin-coated onto a ZnO / ITO substrate (4000-6000 rpm, 30 s), and chlorobenzene antisolvent was added dropwise at the 5th second, followed by annealing at 150 °C for 60 s. The synergistic effect of SG molecules (-SO2-NH- and FA) + Hydrogen bonding, -NH-C(=NH)-NH2 with Pb 2+ Coordination guides the vertical orientation growth of perovskite grains, forming a closely packed monolayer grain structure (such as...). Figure 3 (As shown).

[0059] 5. Spin-coat the Spiro-OMeTAD hole transport layer, as in Example 1.

[0060] 6. Sequentially evaporate and deposit MoO x The Ag top electrode is the same as in Example 1.

[0061] The resulting device structure is: ITO / ZnO / SG-FAPbI3 / Spiro-OMeTAD / MoO x / Ag.

[0062] Performance testing: Luminous properties: such as Figure 5 As shown in Figure b, the device achieves a peak EQEEL of 25.8% and a peak luminance of 642 Wsr. - ¹ m - ², with a startup voltage as low as 1.10 V.

[0063] Photovoltaic performance: such as Figure 6 As shown in Figure b, the device V OC It is 1.16 V. J SC 21.03 mA cm - ², FF is 51.45%, and PCE reaches 12.58%.

[0064] Stability: The device operates at 62.5 mA cm⁻¹ - ²Operates under constant current. T 90 Lifespan exceeds 13 hours.

[0065] Example 3: Fabrication of a bifunctional device based on 5AVA interface modification and bulk phase modulation This embodiment demonstrates a method for preparing high-efficiency bifunctional devices by using 5-aminovaleric acid (5AVA) as both an interface modification layer and an active layer additive.

[0066] 1. Clean the patterned ITO glass (sheet resistance 15 Ω / sq) and treat it with UV-O3.

[0067] 2. Spin-coat a ZnO nanoparticle solution (10 mg / mL) onto ITO, and anneal at 4000 rpm for 60 s at 150 ℃ for 15 minutes to form an electron transport layer.

[0068] 3. Preparation of 5AVA interface modification layer: A methanol solution of 5AVA was spin-coated onto the ZnO layer to form an ultrathin modification layer.

[0069] 4. Preparation of perovskite precursor solution: Dissolve 5AVA, FAI, and PbI2 in 1 mL DMF at a molar ratio of 0.2:1.8:1.0 (0.0164 g: 0.2167 g: 0.3227 g) to prepare a 0.7 M solution, and stir at 60 °C for 8 h. This ratio aims to obtain highly dispersed nanocrystalline (PNC) films with a grain size of approximately 100 nm. Figure 4 As shown.

[0070] 5. In a nitrogen atmosphere, the above precursor solution was spin-coated onto a ZnO / 5AVA substrate and annealed at 150 °C for 1 minute to form a perovskite luminescent-photovoltaic active layer (approximately 250 nm thick).

[0071] 6. Spin-coating a chlorobenzene solution of Spiro-OMeTAD as a hole transport layer, as in Example 1.

[0072] 7. Sequentially deposit MoO in a vacuum evaporation apparatus. x Ag was used as the top electrode, as in Example 1.

[0073] The resulting device structure is: ITO / ZnO / 5AVA interface layer / 5AVA-FAPbI3 nanocrystals / Spiro-OMeTAD / MoO x / Ag.

[0074] Performance testing: Luminous properties: such as Figure 5 As shown in Figure c, the device peak EQE EL Reaching 23.2%, with a peak brightness of up to 490 W sr - ¹ m - ².

[0075] Photovoltaic performance: such as Figure 6 As shown in Figure c, under standard AM 1.5G sunlight, the device... V OC It is 1.19 V. J SC 23.06 mA cm - ², with an FF of 55.59% and a photoelectric conversion efficiency (PCE) of 15.23%.

[0076] Comparative explanation: The core difference between this embodiment and Embodiments 1 and 2 is that the 5AVA molecule plays a dual role: it acts as both an interface passivator between the electron transport layer and the perovskite layer and a dispersant regulator for the crystallization of the perovskite bulk phase, thereby synergistically optimizing the interface contact and bulk phase quality, and ultimately achieving a dual improvement in luminescence and photovoltaic performance.

[0077] To further demonstrate the beneficial effects of the present invention and to better understand it, the following experimental examples and comparative examples further illustrate the technical features disclosed in the present invention, but should not be construed as limiting the present invention. Other improvements made by those skilled in the art based on the above-described invention, without inventive effort, are also considered to fall within the protection scope of the present invention.

[0078] Comparative example: Devices without functional molecule regulation Except for step 3, in which no functional molecules (β-alanine, SG) are added, and step 5, in which the PEAI post-treatment is not performed, the other preparation steps are the same as in Example 1 or 2.

[0079] Performance testing: Luminous performance: Peak EQE EL It has a brightness of only 14.4%, which is relatively low, and a high start-up voltage (approximately 1.25 V).

[0080] Photovoltaic performance: PCE is only 7.71%. V OC Both FF and FF are significantly lower than those of the embodiment device.

[0081] The above embodiments and comparative examples demonstrate that the present invention, by introducing specific functional molecules to regulate perovskite crystallization and interfaces, is key to realizing high-performance light-emitting and photovoltaic dual-function devices.

[0082] The above description of the disclosed embodiments enables those skilled in the art to make or use the invention. Various modifications to these embodiments will be readily apparent to those skilled in the art, and the general principles defined herein may be implemented in other embodiments without departing from the spirit or scope of the invention. Therefore, the invention is not to be limited to the embodiments shown herein, but is to be accorded the widest scope consistent with the principles and novel features disclosed herein.

Claims

1. A perovskite light-emitting and photovoltaic dual-functional device, characterized in that, The device, from bottom to top, comprises: Transparent conductive substrate; Electron transport layer; Perovskite luminescent-photovoltaic active layer, containing functional molecules; Hole transport layer; Top electrode; The functional molecules are used to regulate the crystal morphology and / or defect states of the perovskite luminescent-photovoltaic active layer, so that the device has a peak external quantum efficiency of not less than 25% in electroluminescent mode and a photoelectric conversion efficiency of not less than 15% in photovoltaic mode.

2. The perovskite light-emitting and photovoltaic dual-functional device according to claim 1, characterized in that, The functional molecule is selected from at least one of amino acid molecules, organic ammonium salt molecules, and molecules containing both sulfonamide and guanidine groups.

3. The perovskite light-emitting and photovoltaic dual-functional device according to claim 2, characterized in that, The amino acid molecules include β-alanine, 5-aminovaleric acid, and serine; the organic ammonium salt molecules are phenylethylamine iodide (PEAI); and the molecules containing both sulfonamide and guanidine groups are sulfanilamide guanidine.

4. The perovskite light-emitting and photovoltaic dual-functional device according to claim 3, characterized in that, The perovskite luminescent-photovoltaic active layer contains β-alanine and phenylethylamine iodide (PEAI), and a spontaneously generated embedded submicron cavity structure is formed within the active layer.

5. The perovskite light-emitting and photovoltaic dual-functional device according to claim 3, characterized in that, The perovskite luminescent-photovoltaic active layer contains sulfanilamide guanidine, and the grains of the active layer are arranged in a vertically oriented monolayer with close packing.

6. The perovskite light-emitting and photovoltaic dual-functional device according to claim 1, characterized in that, The material of the perovskite luminescent-photovoltaic active layer is FAPbI3, and the thickness of the perovskite luminescent-photovoltaic active layer is 150-350 nm.

7. The perovskite light-emitting and photovoltaic dual-functional device according to claim 1, characterized in that, The electron transport layer is a ZnO nanoparticle layer, and the hole transport layer is Spiro-OMeTAD.

8. A method for fabricating a perovskite light-emitting and photovoltaic bifunctional device as described in any one of claims 1-7, characterized in that, Includes the following steps: (1) Provide a transparent conductive substrate; (2) An electron transport layer is prepared on the transparent conductive substrate; (3) A perovskite luminescent-photovoltaic active layer containing functional molecules is prepared on the electron transport layer; (4) A hole transport layer is prepared on the perovskite luminescent-photovoltaic active layer; (5) A top electrode is prepared on the hole transport layer.

9. The method for fabricating a perovskite light-emitting and photovoltaic dual-functional device according to claim 8, characterized in that, Step (3) includes: introducing the functional molecules into the perovskite precursor solution and forming the perovskite luminescent-photovoltaic active layer by spin coating and annealing processes.

10. The method for fabricating a perovskite light-emitting and photovoltaic dual-functional device according to claim 9, characterized in that, The concentration of the perovskite precursor solution is 0.5-0.8 M, and the ratio of FAI to PbI2 is (1.5-2.0):1; the perovskite grain size is 50-300 nm, which is between the grain size of LEDs and solar cells.

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