Composite material, thin film and method for producing the same, optoelectronic device and display device

Abstract

The application discloses a composite material, a film and a preparation method thereof, an optoelectronic device and a display device. The composite material comprises an organic semiconductor material and an ammonium thiocyanate salt. The composite material has a high carrier mobility.

Description

Technical Field

[0001] This application relates to the field of optoelectronic device technology, and in particular to a composite material, a thin film and its preparation method, an optoelectronic device and a display device. Background Technology

[0002] Organic semiconductor materials are a class of organic compound materials with electrical conductivity between that of organic insulators and organic conductors. They have excellent photoelectric properties and carrier transport properties and are widely used in optoelectronic devices.

[0003] Existing organic semiconductor materials have low carrier mobility and require further optimization. Summary of the Invention

[0004] In view of this, this application provides a composite material, a thin film, a method for preparing the same, an optoelectronic device, and a display device.

[0005] In a first aspect, this application provides a composite material comprising an organic semiconductor material and an ammonium thiocyanate salt.

[0006] Secondly, this application also provides a thin film comprising the aforementioned composite material.

[0007] Thirdly, this application also provides a method for preparing a thin film, comprising the following steps:

[0008] A mixed solution is provided, wherein the composite material and solvent described above are present;

[0009] Deposit the mixed solution, anneal, and obtain a thin film.

[0010] Fourthly, an optoelectronic device includes an anode, a light-emitting layer, and a cathode stacked sequentially. The optoelectronic device further includes a hole transport layer and / or an electron transport layer, wherein the hole transport layer is located between the anode and the light-emitting layer, and the electron transport layer is located between the light-emitting layer and the cathode.

[0011] The hole transport layer is made of the composite material described above, wherein the organic semiconductor material in the composite material is a p-type organic material; and / or,

[0012] The electron transport layer is made of the composite material described above, wherein the organic semiconductor material in the composite material is an N-type organic material.

[0013] Fifthly, this application also provides a display device including the aforementioned optoelectronic device.

[0014] The composite material described in this application has a high carrier mobility. Attached Figure Description

[0015] To more clearly illustrate the technical solutions in the embodiments of this application, the accompanying drawings used in the description of the embodiments will be briefly introduced below. Obviously, the accompanying drawings described below are only some embodiments of this application. For those skilled in the art, other drawings can be obtained based on these drawings without creative effort.

[0016] Figure 1 This is a flowchart of a thin film preparation method provided in an embodiment of this application;

[0017] Figure 2 This is a schematic diagram of the structure of an optoelectronic device provided in an embodiment of this application.

[0018] Figure Labels

[0019] Optoelectronic device 100; anode 10; light-emitting layer 20; cathode 30; hole transport layer 40; electron transport layer 50. Detailed Implementation

[0020] The technical solutions of the embodiments of this application will be clearly and completely described below with reference to the accompanying drawings. Obviously, the described embodiments are only some embodiments of this application, and not all embodiments. Based on the embodiments of this application, all other embodiments obtained by those skilled in the art without creative effort are within the scope of protection of this application. Furthermore, it should be understood that the specific embodiments described herein are only for illustration and explanation of this application and are not intended to limit this application.

[0021] In this application, unless otherwise stated, directional terms such as "upper" and "lower" generally refer to the upper and lower positions of the device in its actual use or operating state, specifically the drawing directions in the accompanying drawings; while "inner" and "outer" refer to the outline of the device. Furthermore, in the description of this application, the term "comprising" means "including but not limited to". The terms first, second, third, etc., are used merely as illustrative purposes and do not impose numerical requirements or establish a numerical order.

[0022] In this application, "and / or" describes the relationship between related objects, indicating that three relationships can exist. For example, A and / or B can represent: A existing alone, A and B existing simultaneously, or B existing alone. A and B can be singular or plural.

[0023] In this application, "at least one" means one or more, and "more than one" means two or more. "At least one," "at least one of the following," or similar expressions refer to any combination of these items, including any combination of single or multiple items. For example, "at least one of a, b, or c," or "at least one of a, b, and c," can both mean: a, b, c, ab (i.e., a and b), ac, bc, or abc, where a, b, and c can be single or multiple.

[0024] In this application, the term "on" forming another layer on a certain layer is a broad concept. It can mean that the formed other layer is adjacent to a certain layer, or it can mean that there are other spacer structures between the other layer and the certain layer. For example, when a second electrode is formed "on" a first charge carrier functional layer, the term "on" can mean that the formed second electrode is adjacent to the first charge carrier functional layer, or it can mean that there are other spacer structures between the second electrode and the first charge carrier functional layer, such as a light-emitting layer.

[0025] Various embodiments of this application may exist in the form of a range; it should be understood that the description in the form of a range is merely for convenience and brevity and should not be construed as a hard limitation on the scope of this application; therefore, it should be considered that the range description has specifically disclosed all possible sub-ranges and single numerical values ​​within that range. For example, it should be considered that the range description from 1 to 6 has specifically disclosed sub-ranges such as from 1 to 3, from 1 to 4, from 1 to 5, from 2 to 4, from 2 to 6, from 3 to 6, etc., and single numbers within the range, such as 1, 2, 3, 4, 5, and 6, regardless of the range. Furthermore, whenever a numerical range is referred to herein, it means including any referenced number (fraction or integer) within the referred range.

[0026] In this application, "substitution" means that the hydrogen atom in the substituent is replaced by the substituent.

[0027] In this application, when no linking site is specified in the group, it means that any linkable site in the group is selected as the linking site.

[0028] In this application, when the same substituent appears multiple times, it can be independently selected from different groups. If the general formula contains multiple R1s, then R1s can be independently selected from different groups.

[0029] In this application, "substituted or unsubstituted" means that the defined group may or may not be substituted. When the defined group is substituted, it should be understood that the defined group can be substituted by one or more substituents R, wherein R is selected from, but is not limited to: deuterium, cyano, isocyano, nitro, or halogen, C 1-30Alkyl groups, heterocyclic groups containing 3-20 ring atoms, aromatic groups containing 6-20 ring atoms, heteroaromatic groups containing 5-20 ring atoms, -NR'R"", silyl groups, carbonyl groups, alkoxycarbonyl groups, aryloxycarbonyl groups, carbamoyl groups, halocarbamoyl groups, formyl groups, isocyanate groups, thiocyanate groups, isothiocyanate groups, hydroxyl groups, trifluoromethyl groups, and the above groups may be further substituted with substituents acceptable in the art; it is understood that R' and R" in -NR'R" are each independently selected from, but not limited to: H, deuterium, cyano, isocyano, nitro or halogen, C 1-10 Alkyl groups, heterocyclic groups containing 3-20 ring atoms, aromatic groups containing 6-20 ring atoms, and heteroaromatic groups containing 5-20 ring atoms.

[0030] In this application, "ring atom number" refers to the number of atoms in the ring itself of a structural compound (e.g., a monocyclic compound, a fused-ring compound, a cross-linked compound, a carbocyclic compound, or a heterocyclic compound) obtained by atomic bonding to form a ring. When the ring is substituted by a substituent, the atoms contained in the substituent are not included in the ring-forming atoms. The same applies to the "ring atom number" described below unless otherwise specified. For example, a benzene ring has 6 ring atoms, a naphthalene ring has 10 ring atoms, and a thiophene group has 5 ring atoms.

[0031] In this application, "aryl or aromatic group" refers to an aromatic hydrocarbon group derived from an aromatic ring compound by removing one hydrogen atom. It can be a monocyclic aryl, a fused-ring aryl, or a polycyclic aryl. For polycyclic rings, at least one is an aromatic ring system. For example, "substituted or unsubstituted aryl having 6 to 40 ring atoms" refers to an aryl containing 6 to 40 ring atoms, preferably a substituted or unsubstituted aryl having 6 to 30 ring atoms, more preferably a substituted or unsubstituted aryl having 6 to 18 ring atoms, and particularly preferably a substituted or unsubstituted aryl having 6 to 14 ring atoms, and optionally further substituted on the aryl group; suitable examples include, but are not limited to: phenyl, biphenyl, terphenyl, naphthyl, anthracene, phenanthrene, fluoranyl, triphenylene, pyrene, perylene, tetraphenyl, fluorenyl, dinaphthylphenyl, acenaphthyl and their derivatives. Understandably, multiple aryl groups can also be interrupted by short non-aromatic units (e.g., <10% non-H atoms, such as C, N, or O atoms), specifically acenaphthene, fluorene, or 9,9-diarylfluorene, triarylamine, and diaryl ether systems should also be included in the definition of aryl.

[0032] In this application, "heteroaryl or heteroaromatic group" refers to an aryl group in which at least one carbon atom is replaced by a non-carbon atom, which can be an N atom, O atom, S atom, etc. For example, "substituted or unsubstituted heteroaryl group having 5 to 40 ring atoms" refers to a heteroaryl group having 5 to 40 ring atoms, preferably a substituted or unsubstituted heteroaryl group having 6 to 30 ring atoms, more preferably a substituted or unsubstituted heteroaryl group having 6 to 18 ring atoms, and particularly preferably a substituted or unsubstituted heteroaryl group having 6 to 14 ring atoms. The heteroaryl group may optionally be further substituted, and suitable examples include, but are not limited to: thiophene, furanyl, pyrroleyl, imidazole, triazolyl, imidazoleyl, diazolyl, triazolyl, pyridyl, bipyridyl, pyrimidinyl, triazinyl, acridineyl, pyridazinyl, etc. Azinyl, quinolinyl, quinazolinyl, quinoxalinyl, phthalazinyl, pyridinylpyrimidinyl, pyridinylpyrazinyl, pyrazinylpyrazinyl, isoquinolinyl, indolyl, carbazoleyl, benzothiopheneyl, benzofuranyl, indolyl, carbazoleyl, pyrroloimidazolyl, pyrrolopyrrololyl, thienopyrrololyl, thienopyrrololyl, furanolol, furanol, thienofuranyl, benzoisoxazolyl, benzoisothiazolyl, benzoimidazolyl, quinolinyl, isoquinolinyl, o-diazonaphthyl, quinoxalinyl, phenanthridine, primidyl, quinazolinyl, quinazolinone, dibenzothiopheneyl, dibenzofuranyl, carbazoleyl and their derivatives.

[0033] In this application, "alkyl" can mean straight-chain, branched, or cyclic alkyl. The number of carbon atoms in an alkyl group can be 1 to 50, 1 to 30, 1 to 20, 1 to 10, or 1 to 6. Phrases containing this term, such as "C 1-9"Alkyl" refers to an alkyl group containing 1 to 9 carbon atoms, and each time it appears, it can independently be C1 alkyl, C2 alkyl, C3 alkyl, C4 alkyl, C5 alkyl, C6 alkyl, C7 alkyl, C8 alkyl, or C9 alkyl. Non-limiting examples of alkyl groups include methyl, ethyl, n-propyl, isopropyl, n-butyl, sec-butyl, tert-butyl, isobutyl, 2-ethylbutyl, 3,3-dimethylbutyl, n-pentyl, isopentyl, neopentyl, tert-pentyl, 1-methylpentyl, 3-methylpentyl, 2-ethylpentyl, 4-methyl-2-pentyl, n-hexyl, 1-methylhexyl, 2-ethylhexyl, 2-butylhexyl, n-heptyl, 1-methylheptyl, 2,2-dimethylheptyl, 2-ethylheptyl, 2-butylheptyl, n-octyl, tert-octyl, 2-ethyloctyl, 2-butyloctyl, 2-hexyloctyl, 3,7-dimethyloctyl, n- Nonyl, n-decyl, adamantyl, 2-ethyldecyl, 2-butyldecyl, 2-hexyldecyl, 2-octyldecyl, n-undecyl, n-dodecyl, 2-ethyldodecyl, 2-butyldodecyl, 2-hexyldodecyl, 2-octyldodecyl, n-tridecyl, n-tetradecyl, n-pentadecanyl, n-hexadecyl, 2-ethylhexadecyl, 2-butylhexadecyl, 2-hexylhexadecyl, 2-octylhexadecyl, n-heptadecyl, n-octadecyl, n-octadecyl, n-heptadecyl, n-octadecyl, n-heptadecyl, n-octadecyl, n-nonadecanyl, n-eicosyl, 2-ethyleicosyl, 2-butyleicosyl, 2-hexyleicosyl, 2-octyleicosyl, n-monodecyl, n-doryl, n-tridecyl, n-tetradecyl, n-pentadecanyl, n-hexadecyl, n-heptadecyl, n-octadecyl, n-nonadecanyl, n-triadecyl, adamantane, etc.

[0034] In this application, "alkoxy" refers to a group with the structure "-O-alkyl", that is, an alkyl group as defined above that is attached to other groups via an oxygen atom. Suitable examples of phrases containing this term include, but are not limited to: methoxy (-O-CH3 or -OMe), ethoxy (-O-CH2CH3 or -OEt), and tert-butoxy (-OC(CH3)3 or -OtBu).

[0035] In this application, "aryloxy group" refers to a group with the structure "-O-aryl", that is, an aryl group as defined above that is attached to other groups via an oxygen atom. Suitable examples of phrases containing this term include, but are not limited to, phenoxy, naphthoxy, etc.

[0036] It should be noted that the thickness of the film in this application was measured using a step tester, and the average particle size in this application was measured using a transmission electron microscope (TEM).

[0037] The technical solution of this application is as follows:

[0038] In a first aspect, embodiments of this application provide a composite material comprising an organic semiconductor material and an ammonium thiocyanate salt.

[0039] It should be noted that the organic semiconductor material refers to an organic material with semiconductor properties, that is, conductivity between that of a metal and an insulator. The organic semiconductor material has thermally activated conductivity and a conductivity of 10-1. -10 Organic matter in the range of ~100S / cm.

[0040] In some embodiments, the ammonium thiocyanate salt has the structural formula shown in formula (I):

[0041]

[0042] Among them, R1, R2, R3, and R4 are each independently selected from, but not limited to, H, substituted or unsubstituted C1 to C4. 20 Alkyl, substituted or unsubstituted silyl, -CF3, C2 to C 20 An olefinic group, an aromatic group having 6 to 60 substituted or unsubstituted ring atoms, a heteroaromatic group having 5 to 60 substituted or unsubstituted ring atoms, or a combination of these groups.

[0043] In some embodiments, the substituents described in this application include, but are not limited to, halogens, hydroxyl groups, nitro groups, cyano groups, isocyano groups, silyl groups, and C1-C2 groups. 20 Alkyl, C1-C 20 Alkoxy, C1-C 20 One or more of the following: alkylthio, aryl with 6 to 60 ring atoms, aryloxy with 6 to 60 ring atoms, and arylthio with 6 to 60 ring atoms.

[0044] The organic semiconductor materials include, but are not limited to, one or more of N-type organic materials and P-type organic materials.

[0045] It should be noted that the organic semiconductor material in this application is a type of organic semiconductor material that can achieve directional, orderly, and controllable migration of charge carriers under the action of an electric field when charge carriers (electrons or holes) are injected, thereby achieving charge transfer.

[0046] The composite material described in this application includes the organic semiconductor material and the ammonium thiocyanate salt. During the preparation of the composite material, the ammonium thiocyanate salt can form hydrogen bond interactions with the organic semiconductor material, promoting cross-linking between the molecules of the organic semiconductor material. This makes it easier for the organic semiconductor material molecules to cross-link into a more stable network structure. As a result, the prepared film can have a lower roughness, thus giving the film a higher surface quality. This reduces the nonradiative recombination of charge carriers on the surface of the charge transport layer (electron transport layer or hole transport layer), thereby increasing the carrier mobility and extending the carrier lifetime. This increases the carrier diffusion length, resulting in higher stability and higher carrier mobility for the composite material.

[0047] In some embodiments, the mass ratio of the organic semiconductor material to the ammonium thiocyanate salt in the composite material ranges from (10 to 50):1, for example, 10:1, 15:1, 20:1, 25:1, 30:1, 35:1, 40:1, 45:1, 50:1, and any range between two such ratios. Within this range, it is advantageous for the composite material to possess higher stability and carrier mobility.

[0048] In some embodiments, R1, R2, R3, and R4 are each independently selected from substituted or unsubstituted C1 to C2. 15 Alkyl, substituted or unsubstituted silyl, -CF3, C2 to C 15 The composite material contains an olefinic group, an aromatic group with 6 to 30 substituted or unsubstituted ring atoms, a heteroaromatic group with 5 to 30 substituted or unsubstituted ring atoms, or a combination of these groups. These groups can effectively improve carrier mobility while extending carrier lifetime, thereby increasing the carrier diffusion length and resulting in higher stability and higher carrier mobility in the composite material.

[0049] Furthermore, in some embodiments, R1, R2, R3, and R4 are each independently selected from substituted or unsubstituted C1 to C2. 10 Alkyl, substituted or unsubstituted silyl, -CF3, C2 to C 10 The composite material comprises an olefinic group, an aromatic group with 6 to 20 substituted or unsubstituted ring atoms, a heteroaromatic group with 5 to 20 substituted or unsubstituted ring atoms, or a combination of these groups. These groups can effectively improve carrier mobility while extending carrier lifetime, thereby increasing carrier diffusion length and resulting in higher stability and higher carrier mobility in the composite material.

[0050] Furthermore, in some embodiments, R1, R2, R3, and R4 are each independently selected from substituted or unsubstituted C1-C8 alkyl groups, substituted or unsubstituted silyl groups, -CF3, C2-C8 olefinic groups, substituted or unsubstituted aromatic groups with 6 to 15 ring atoms, substituted or unsubstituted heteroaromatic groups with 5 to 15 ring atoms, or combinations of these groups. These groups can effectively improve carrier mobility while extending carrier lifetime, thereby increasing the carrier diffusion length and thus giving the composite material higher stability and higher carrier mobility.

[0051] Furthermore, in some embodiments, R1, R2, R3, and R4 are each independently selected from substituted or unsubstituted C1-C8 chain alkyl groups, -CF3, C2-C8 olefinic groups, substituted or unsubstituted aromatic groups with 6 to 15 ring atoms, substituted or unsubstituted heteroaromatic groups with 5 to 12 ring atoms, or combinations of these groups. These groups can effectively improve carrier mobility while extending carrier lifetime, thereby increasing the carrier diffusion length and thus giving the composite material higher stability and higher carrier mobility.

[0052] In some embodiments, the substituents described in this application include, but are not limited to, halogens, hydroxyl groups, nitro groups, cyano groups, isocyano groups, silyl groups, and C1-C2 groups. 15 Alkyl, C1-C 15 Alkoxy, C1-C 15 The substituent is selected from one or more of the following: alkylthio, aryl, aryloxy, and arylthio. The substituent can effectively improve carrier mobility and extend carrier lifetime, thereby increasing the carrier diffusion length and resulting in higher stability and higher carrier mobility in the composite material.

[0053] Furthermore, in some embodiments, the substituents described in this application include, but are not limited to, halogens, hydroxyl groups, nitro groups, cyano groups, isocyano groups, silyl groups, and C1-C2 groups. 10 Alkyl, C1-C 10 Alkoxy, C1-C 10 The substituent is selected from one or more of the following: alkylthio, aryl, aryloxy, and arylthio. The substituent can effectively improve carrier mobility and extend carrier lifetime, thereby increasing the carrier diffusion length and resulting in higher stability and higher carrier mobility in the composite material.

[0054] Furthermore, in some embodiments, the substituents described in this application include, but are not limited to, one or more of the following: halogen, hydroxyl, nitro, cyano, isocyano, silyl, C1-C8 alkyl, C1-C8 alkoxy, C1-C8 alkylthio, aryl with 6 to 15 ring atoms, aryloxy with 6 to 15 ring atoms, and arylthio with 6 to 15 ring atoms. These substituents can effectively improve carrier mobility while extending carrier lifetime, thereby increasing the carrier diffusion length and resulting in higher stability and higher carrier mobility in the composite material.

[0055] Furthermore, in some embodiments, the substituents described in this application include, but are not limited to, one or more of the following: halogen, hydroxyl, nitro, cyano, isocyano, silyl, C1-C5 alkyl, C1-C5 alkoxy, C1-C5 alkylthio, aryl with 6 to 10 ring atoms, aryloxy with 6 to 10 ring atoms, and arylthio with 6 to 10 ring atoms. These substituents can effectively improve carrier mobility while extending carrier lifetime, thereby increasing the carrier diffusion length and resulting in higher stability and higher carrier mobility in the composite material.

[0056] Furthermore, in some embodiments, the substituents described in this application include, but are not limited to, one or more of halogens, hydroxyl groups, nitro groups, C1-C5 alkyl groups, and aryl groups with 6 to 10 ring atoms. These substituents can effectively improve carrier mobility while extending carrier lifetime, thereby increasing the carrier diffusion length and resulting in higher stability and higher carrier mobility in the composite material.

[0057] In some embodiments, the ammonium thiocyanate salt includes, but is not limited to, one or more of ammonium thiocyanate, alkyl ammonium thiocyanate, and aryl ammonium thiocyanate. The alkyl ammonium thiocyanate salts include, but are not limited to, one or more of ethyl ammonium thiocyanate (CAS No. 25153-19-9), tetrabutyl ammonium thiocyanate (CAS No. 3674-54-2), neopentyl ammonium thiocyanate, and n-dodecyl ammonium thiocyanate (CAS No. 22031-31-8). The aryl ammonium thiocyanate salts include, but are not limited to, one or more of phenylammonium thiocyanate (CAS No. 27248-14-2), benzyl ammonium thiocyanate (CAS No. 51571-89-2), and phenylethyl ammonium thiocyanate (CAS No. 2656409-76-4). The thiocyanate and ammonium chains in the ammonium thiocyanate salt exhibit a typical linkage orientation, with the thiocyanate and ammonium chains connected at an angle of 20° to 80°, for example, 20°, 25°, 30°, 35°, 40°, 45°, 50°, 55°, 60°, 65°, 70°, 75°, 80°, and any range between any two of these values. For instance, in ethylammonium thiocyanate, the thiocyanate and ammonium chains are connected at approximately 45°; in tetrabutylammonium thiocyanate, they are connected at approximately 30°; and in neopentylammonium thiocyanate, they are connected at approximately 60°. This arrangement can more effectively promote cross-linking between the molecules of the organic semiconductor material, making it easier for the organic semiconductor material molecules to cross-link into a more stable network structure.

[0058] The structural formula of the ammonium ethylthiocyanate is:

[0059]

[0060] The structural formula of the tetrabutylthiocyanate ammonium is:

[0061]

[0062] The structural formula of the neopentyl thiocyanate ammonium is:

[0063]

[0064] The structural formula of the ammonium dodecyl thiocyanate is:

[0065]

[0066] The structural formula of the ammonium phenylthiocyanate is:

[0067]

[0068] The structural formula of the benzyl thiocyanate ammonium is:

[0069]

[0070] The structural formula of the ammonium phenylethyl thiocyanate is:

[0071]

[0072] In some embodiments, the N-type organic material includes diphenyl[4-(triphenylsilyl)phenyl]phosphine oxide (TSPO1), 1,3,5-tris((3-pyridyl)-3-phenyl)benzene (TmPyPB), 2-(4-biphenyl)-5-phenyloxadiazole (PBD), bis(10-hydroxybenzo[h]quinoline)beryllium (Bebq2) (CAS: 148896-39-3), 3-(biphenyl-4-yl)-5-(4-tert-butylphenyl)-4-phenyl-4H-1,2,4- Triazole (TAZ), 2,7-bis(diphenylphosphine)-9,9'-spirobis[fluorene] (SPPO13), 1,3,5-tris(1-phenyl-1H-benzimidazol-2-yl)benzene (TPBI), 4,6-bis(3,5-di(3-pyridinylphenyl)-2-methylpyrimidine (B3PYMPM), 4,7-diphenyl-1,10-phenanthroline (BPhen), 2-(4'-tert-butylphenyl)-5-(4'-biphenyl)-1,3,4-oxadiazole, 2,9-dimethyl- 4,7-Diphenyl-1,10-o-phenanthroline, 4,7-diphenyl-1,10-o-phenanthroline, bis(2-methyl-8-hydroxyquinoline-N1,O8)-1,1'-biphenyl-4-hydroxy)aluminum, 8-hydroxyquinoline aluminum (Alq3), 2,7-bis(diphenyloxyphosphino)-9,9'-spirobis[fluorene], poly[9,9-dioctylfluorene-9,9-bis(N,N-dimethylaminopropyl)fluorene], 9,9-bis[3'-(N,N-dimethylamino)propyl-2,7-fluorene]-alternating- One or more of the following: 2,7-(9,9-dioctylfluorene), 1,3-bis[5-(4-tert-butylphenyl)-2-[1,3,4]oxadiazolyl]benzene (OXD-7), 3',3'",3'""-(1,3,5-triazine-2,4,6-triyl)-tris(([1,1'-biphenyl]-3-carboxynitrile))(CNT2T), and 2,4,6-tris[3-(diphenylphosphoxy)phenyl]-1,3,5-triazole (POT2T, CAS No.: 1646906-26-4).

[0073] In some embodiments, the P-type organic materials include, but are not limited to, 4,4'-N,N'-dicarbazolyl-biphenyl (CBP), poly[bis(4-phenyl)(2,4,6-trimethylphenyl)amine] (PTAA), N,N'-diphenyl-N,N'-bis(1-naphthyl)-1,1'-biphenyl-4,4”-diamine (α-NPD), N,N'-diphenyl-N,N'-bis(3-methylphenyl)-(1,1'-biphenyl)-4,4'-diamine (TPD), poly(N,N'-bis(4-butylphenyl)-N,N'-bis(phenyl)biphenylamine) (Poly-TPD), N N'-bis(3-methylphenyl)-N,N'-bis(phenyl)-spiro(spiro-TPD), N,N'-bis(4-(N,N'-diphenyl-amino)phenyl)-N,N'-diphenylbenzidine (DNTPD), 4,4',4'-tris(N-carbazolyl)-triphenylamine (TCTA), 4,4',4'-tris(N-3-methylphenyl-N-phenylamino)triphenylamine (m-MTDATA), poly[(9,9'-dioctylfluorene-2,7-diyl)-co-(4,4'-(N-(4-sec-butylphenyl)diphenylamine))](TFB), poly(N-vinylcarbazole) PVK and its derivatives, N,N'-di(1-naphthyl)-N,N'-diphenyl-1,1'-biphenyl-4-4'-diamine (NPB), spiroNPB, poly(phenylenevinylene) (PPV), poly[2-methoxy-5-(2-ethylhexyloxy)-1,4-phenylenevinylene] (MEH-PPV), poly[2-methoxy-5-(3',7'-dimethyloctyloxy)-1,4-phenylenevinylene] (MOMO-PPV), 2,2',7,7'-tetrakis[N,N-di(4-methoxyphenyl)amino]-9,9'-spirodifluorene (spiro-om) eTAD), 4,4'-cyclohexylbis[N,N-di(4-methylphenyl)aniline] (TAPC), 1,3-bis(carbazole-9-yl)benzene (MCP), polyaniline, polypyrrole, poly(p)phenylene vinylidene, aromatic tertiary amine, polynuclear aromatic tertiary amine, 4,4'-bis(p-carbazole)-1,1'-biphenyl compounds, N,N,N',N'-tetraarylbenzidine, PEDOT:PSS and its derivatives, polymethacrylate and its derivatives, poly(9,9-octylfluorene) and its derivatives, poly(spirofluorene) and its derivatives, doped graphene, undoped graphene, and one or more of C60.

[0074] In some preferred embodiments, the N-type organic material is 3',3'",3'""-(1,3,5-triazine-2,4,6-triyl)-tris(([1,1'-biphenyl]-3-carboxynitrile)), and the ammonium thiocyanate salt includes one or more of neopentylammonium thiocyanate, phenylammonium thiocyanate, benzylammonium thiocyanate, n-dodecylammonium thiocyanate, phenylethylammonium thiocyanate, ethylammonium thiocyanate, and tetrabutylammonium thiocyanate. In other preferred embodiments, the N-type organic material is 2, 4,6-Tris[3-(diphenylphosphoxy)phenyl]-1,3,5-triazole, wherein the ammonium thiocyanate salt is neopentylammonium thiocyanate. More preferably, the N-type organic material is one or more of 3',3'",3'""-(1,3,5-triazine-2,4,6-triyl)-tris(([1,1'-biphenyl]-3-carboxynitrile)) and 2,4,6-tris[3-(diphenylphosphoxy)phenyl]-1,3,5-triazole, wherein the ammonium thiocyanate salt is neopentylammonium thiocyanate. More preferably, the N-type organic material is one or more selected from 3',3'",3'""-(1,3,5-triazine-2,4,6-triyl)-tris(([1,1'-biphenyl]-3-carboxynitrile)) and 2,4,6-tris[3-(diphenylphosphino)phenyl]-1,3,5-triazole, and the ammonium thiocyanate salt is ethylammonium thiocyanate. The combination of the N-type organic material and the ammonium thiocyanate salt can effectively reduce the surface roughness of the prepared organic electron transport layer, effectively improve the film quality of the organic electron transport layer, and thus effectively improve the electron mobility of the organic electron transport layer.

[0075] In some preferred embodiments, the P-type organic material is poly[(9,9'-dioctylfluorene-2,7-diyl)-co-(4,4'-(N-(4-sec-butylphenyl)diphenylamine))], and the ammonium thiocyanate salt includes one or more of neopentylammonium thiocyanate, phenylammonium thiocyanate, benzylammonium thiocyanate, n-dodecylammonium thiocyanate, phenylethylammonium thiocyanate, ethylammonium thiocyanate, and tetrabutylammonium thiocyanate. In other preferred embodiments, the P-type organic material is poly(N-vinylcarbazole), and the ammonium thiocyanate salt is neopentylammonium thiocyanate. More preferably, the P-type organic material is poly[(9,9'-dioctylfluorene-2,7-diyl)-co-(4,4'-(N-(4-sec-butylphenyl)diphenylamine))], and the ammonium thiocyanate salt is neopentylammonium thiocyanate. More preferably, the P-type organic material is poly[(9,9'-dioctylfluorene-2,7-diyl)-co-(4,4'-(N-(4-sec-butylphenyl)diphenylamine))], and the ammonium thiocyanate salt is tetrabutylammonium thiocyanate. The combination of the P-type organic material and the ammonium thiocyanate salt can effectively reduce the surface roughness of the prepared organic hole transport layer, effectively improve the film quality of the organic hole transport layer, and thus effectively improve the hole mobility of the organic hole transport layer.

[0076] Secondly, embodiments of this application also provide a thin film, wherein the thin film includes the composite material.

[0077] The root mean square surface roughness of the thin film is 1–5 nm.

[0078] It is understandable that when the organic semiconductor material is an N-type organic material, the thin film can be an electron transport thin film; when the organic semiconductor material is a P-type organic material, the thin film can be a hole transport thin film.

[0079] The thin film described in this application includes the composite material and has a high carrier mobility and a low roughness.

[0080] Thirdly, please refer to Figure 1 This application also provides a method for preparing a thin film, comprising the following steps:

[0081] Step S11: Provide a mixed solution, wherein the mixed solution includes the composite material and solvent described above;

[0082] Step S12: Deposit the mixed solution, anneal, and obtain a thin film.

[0083] The composite material includes an organic semiconductor material and an ammonium thiocyanate salt, as described above, and will not be repeated here.

[0084] The solvents include, but are not limited to, polar and non-polar solvents. The polar solvents include one or more of the following: dimethyl ether, tetraethylene glycol dimethyl ether, propylene glycol methyl ether acetate, formamide, trifluoroacetic acid, dimethyl sulfoxide, acetonitrile, N,N-dimethylformamide, hexamethylphosphoramide, methanol, acetic acid, ethanol, isopropanol, pyridine, tetramethylethylenediamine, acetone, triethylamine, n-butanol, dioxane, tetrahydrofuran, methyl formate, tributylamine, methyl ethyl ketone, trioctylamine, dimethyl carbonate, diethyl ether, isopropyl ether, n-butyl ether, trichloroethylene, and diphenyl ether. The non-polar solvents include one or more of the following: n-octane, isooctane, n-hexane, cyclohexane, ethyl acetate, benzene, toluene, chlorobenzene, chloroform, carbon tetrachloride, dichloromethane, dichloroethane, and carbon disulfide.

[0085] In some embodiments, the mass ratio of the organic semiconductor material to the ammonium thiocyanate salt ranges from (10 to 50):1, for example, 10:1, 15:1, 20:1, 25:1, 30:1, 35:1, 40:1, 45:1, 50:1, and any range between two such ratios. Within this range, it is advantageous to obtain a composite material with higher stability and carrier mobility.

[0086] In some embodiments, the concentration range of the mixed solution is 20–40 mg / mL, for example, 20 mg / mL, 25 mg / mL, 30 mg / mL, 35 mg / mL, 40 mg / mL, and any range between two values. Within this range, it is advantageous to prepare thin films with better film-forming effects.

[0087] In some embodiments, the annealing is thermal annealing, and the temperature range of the thermal annealing is 100 to 150°C, for example, 100°C, 110°C, 120°C, 130°C, 140°C, 150°C, and any range between two values, and the annealing time range is 5 to 20 minutes, for example, 5 minutes, 10 minutes, 15 minutes, 20 minutes, and any range between two values.

[0088] In some embodiments, the method for depositing the inorganic particle dispersion is a solution method, such as spin coating, printing, inkjet printing, blade coating, printing, dip coating, immersion coating, spraying, roller coating, casting, slot coating, and strip coating.

[0089] Fourthly, please refer to Figure 2 This application provides an optoelectronic device 100, comprising an anode 10, a light-emitting layer 20, and a cathode 30 stacked sequentially. The optoelectronic device 100 further includes a hole transport layer 40 and / or an electron transport layer 50, wherein the hole transport layer 40 is located between the anode 10 and the light-emitting layer 20, and the electron transport layer 50 is located between the light-emitting layer 20 and the cathode 30. The hole transport layer 40 is made of the composite material described above, wherein the organic semiconductor material in the composite material is a P-type organic material; and / or, the electron transport layer 50 is made of the composite material described above, wherein the organic semiconductor material in the composite material is an N-type organic material.

[0090] The hole transport layer 40 and / or electron transport layer 50 of the optoelectronic device 100 described in this application include the composite material, thus exhibiting properties such as greater brightness, longer lifespan, and higher efficiency.

[0091] The anode 10 and the cathode 30 are anodes and cathodes known in the art for use in optoelectronic devices. For example, they can be independently, but are not limited to, doped metal oxide particle electrodes, composite electrodes, graphene electrodes, carbon nanotube electrodes, elemental metal electrodes, or alloy electrodes. The material of the doped metal oxide particle electrode can be, but is not limited to, one or more of indium-doped tin oxide (ITO), fluorine-doped tin oxide (FTO), antimony-doped tin oxide (ATO), aluminum-doped zinc oxide (AZO), gallium-doped zinc oxide (GZO), indium-doped zinc oxide (IZO), magnesium-doped zinc oxide (MZO), and aluminum-doped magnesium oxide (AMO). The composite electrode is a composite electrode in which a metal is sandwiched between doped or undoped transparent metal oxide particles, such as AZO / Ag / AZO, AZO / Al / AZO, ITO / Ag / ITO, ITO / Al / ITO, ZnO / Ag / ZnO, ZnO / Al / ZnO, TiO2 / Ag / TiO2, TiO2 / Al / TiO2, ZnS / Ag / ZnS, ZnS / Al / ZnS, etc., where " / " indicates a stacked structure. For example, AZO / Ag / AZO represents a composite electrode comprising sequentially stacked AZO, Ag, and AZO layers. The material of the elemental metal electrode may include, but is not limited to, one or more of Ag, Al, Cu, Mo, Au, Pt, Ca, Mg, and Ba.

[0092] The material of the light-emitting layer 20 can be any material known in the art for use as a light-emitting layer, such as one or more of organic light-emitting materials and quantum dots, wherein organic light-emitting materials correspond to OLED optoelectronic devices and quantum dots correspond to QLED optoelectronic devices.

[0093] The organic light-emitting materials may include, but are not limited to, one or more of the following: CBP:Ir(mppy)3(4,4'-bis(N-carbazole)-1,1'-biphenyl:tris[2-(p-tolyl)pyridinium(III)), TCTX:Ir(mmpy)(4,4',4”-tris(carbazole-9-yl)triphenylamine:tris[2-(p-tolyl)pyridinium), diaromatic anthracene derivatives, stilbene aromatic derivatives, pyrene derivatives, fluorene derivatives, TBPe fluorescent materials, TTPX fluorescent materials, TBRb fluorescent materials, DBP fluorescent materials, delayed fluorescent materials, TTA materials, TADF (thermally activated delayed) materials, polymers containing BN covalent bonds, HLCT (hybrid local charge transfer excited state) materials, Exciplex (excitoplex) light-emitting materials, polyacetylene and its derivatives, poly(p-phenylene) and its derivatives, polythiophene and its derivatives, and polyfluorene and its derivatives.

[0094] In some embodiments, the quantum dot may include, but is not limited to, one or more of single-structure quantum dots, core-shell quantum dots, and perovskite quantum dots. The core-shell quantum dot comprises one or more shell layers.

[0095] The materials for the single-structure quantum dots, the core materials for the core-shell structure quantum dots, and the shell materials for the core-shell structure quantum dots may include, but are not limited to, one or more of group II-VI compounds, group IV-VI compounds, group III-V compounds, and group I-III-VI compounds. The group II-VI compounds may include, but are not limited to, one or more of CdS, CdSe, CdTe, ZnS, ZnSe, ZnTe, ZnO, HgS, HgSe, HgTe, CdSeS, CdSeTe, CdSTe, ZnSeS, ZnSeTe, ZnSTe, HgSeS, HgSeTe, HgSTe, CdZnS, CdZnSe, CdZnTe, CdHgS, CdHgSe, CdHgTe, HgZnS, HgZnSe, HgZnTe, CdZnSeS, CdZnSeTe, CdZnSTe, CdHgSeS, CdHgSeTe, CdHgSTe, HgZnSeS, HgZnSeTe, and HgZnSTe. The IV-VI group compounds may include, but are not limited to, one or more of SnS, SnSe, SnTe, PbS, PbSe, PbTe, SnSeS, SnSeTe, SnSTe, PbSeS, PbSeTe, PbSTe, SnPbS, SnPbSe, SnPbTe, SnPbSSe, SnPbSeTe, and SnPbSTe. The group III-V compounds may include, but are not limited to, one or more of GaN, GaP, GaAs, GaSb, AlN, AlP, AlAs, AlSb, InN, InP, InAs, InSb, GaNP, GaNAs, GaNSb, GaPAs, GaPSb, AlNP, AlNAs, AlNSb, AlPAs, AlPSb, InNP, InNAs, InNSb, InPAs, InPSb, GaAlNP, GaAlNAs, GaAlNSb, GaAlPAs, GaAlPSb, GaInNP, GaInNAs, GaInNSb, GaInPAs, GaInPSb, InAlNP, InAlNAs, InAlNSb, InAlPAs, and InAlPSb. The group I-III-VI compounds may include, but are not limited to, one or more of CuInS2, CuInSe2, and AgInS2.

[0096] As an example, the core-shell structured quantum dots may include, but are not limited to, one or more of CdSe / CdSeS / CdS, InP / ZnSeS / ZnS, CdZnSe / ZnSe / ZnS, CdSeS / ZnSeS / ZnS, CdSe / ZnS, CdSe / ZnSe / ZnS, ZnSe / ZnS, ZnSeTe / ZnS, CdSe / CdZnSeS / ZnS, and InP / ZnSe / ZnS.

[0097] The perovskite quantum dots may include, but are not limited to, doped or undoped inorganic perovskite quantum dots, or organic-inorganic hybrid perovskite quantum dots. The general structural formula of the inorganic perovskite quantum dots is AMX3, where A is Cs. + Ions, where M is a divalent metal cation, including Pb 2+ Sn 2+ Cu 2+ Ni 2+ Cd 2+ Cr 2+ Mn 2+ Co 2+ Fe 2+ 、Ge 2+ Yb 2+ Eu 2+ One or more of them, where X is a halide anion, including Cl. - ,Br - I - One or more of the following. The general structural formula of the organic-inorganic hybrid perovskite quantum dots is BMX3, where B is an organic amine cation, including CH3(CH2). n-2 NH3 + Or [NH3(CH2)] n NH3] 2+ Where n≥2, M is a divalent metal cation, including Pb 2+ Sn 2+ Cu 2+ Ni 2+ Cd 2+ Cr 2+ Mn 2+ Co 2+ Fe 2+ 、Ge 2+ Yb 2 + Eu 2+ One or more of them, where X is a halide anion, including Cl. - ,Br - I - One or more of them.

[0098] In some embodiments, the average particle size of the quantum dots is 5 to 15 nm, for example, 5 nm, 6 nm, 8 nm, 10 nm, 12 nm, 13 nm, 15 nm, and any range between two values.

[0099] The surface of the quantum dots also includes ligands, including but not limited to substituted or unsubstituted C6-C. 24 Fatty acids, substituted or unsubstituted C6-C 24 Fatty amines, substituted or unsubstituted C6-C 24 Aliphatic thiols, substituted or unsubstituted C6-C 24 Aliphatic sulfides, substituted or unsubstituted C6-C 24 Aliphatic phosphine, substituted or unsubstituted C6-C 24 Aliphatic phosphine oxides, substituted or unsubstituted C8-C8 phosphine oxides 20 Aliphatic phosphates, substituted or unsubstituted C6-C 24 Aliphatic phosphates, substituted or unsubstituted C6-C 24 Aliphatic phosphorous acid and substituted or unsubstituted C6-C 24 At least one of the fatty phosphites, wherein the substituent is selected from at least one of C1-C6 alkyl, C1-C6 alkoxy and halogen.

[0100] In some embodiments, the substituted or unsubstituted C6-C 24 Fatty acids include at least one of the following: decanoic acid, undecenoic acid, tetradecanoic acid, oleic acid, linoleic acid, and stearic acid.

[0101] In some embodiments, the substituted or unsubstituted C6-C 24 Aliphatic thiols include at least one of octylthiol, dodecylthiol, and octadecylthiol.

[0102] In some embodiments, the substituted or unsubstituted C6-C 24 Fatty amines include at least one of oleylamine, octadecylamine, octylamine, dioctylamine, and trioctylamine.

[0103] In some embodiments, the substituted or unsubstituted C6-C 24 Aliphatic phosphines include trioctylphosphine.

[0104] In some embodiments, the substituted or unsubstituted C6-C 24 Aliphatic phosphine oxides include trioctylphosphine oxides.

[0105] It is understood that when the material of the electron transport layer 50 is not the composite material described above, the material of the electron transport layer 50 may include one or more of inorganic electron transport materials and N-type organic materials described above. The inorganic electron transport material includes, but is not limited to, one or more of the following: first doped metal oxide particles, first undoped metal oxide particles, IIB-VIA group semiconductor materials, IIIA-VA group semiconductor materials, and IB-IIIA-VIA group semiconductor materials. The material of the first undoped metal oxide particles includes, but is not limited to, one or more of ZnO, TiO2, SnO2, ZrO2, and Ta2O5. The metal oxide in the first doped metal oxide particles includes, but is not limited to, one or more of ZnO, TiO2, SnO2, ZrO2, Ta2O5, and Al2O3. The doping element in the first doped metal oxide particles includes, but is not limited to, one or more of Al, Mg, Li, Mn, Y, La, Cu, Ni, Zr, Ce, In, and Ga. The IIB-VIA group semiconductor materials include, but are not limited to, one or more of ZnS, ZnSe, and CdS. The IIIA-VA group semiconductor materials include, but are not limited to, one or more of InP and GaP. The IB-IIIA-VIA group semiconductor materials include, but are not limited to, one or more of CuInS and CuGaS.

[0106] It is understood that when the material of the hole transport layer 40 is not the composite material described above, the material of the hole transport layer 40 may include one or more of inorganic hole transport materials and the p-type organic materials described above. The inorganic hole transport materials include, but are not limited to, one or more of the following: second-doped metal oxide particles, second-undoped metal oxide particles, metal sulfides, metal selenides, and metal nitrides. The metal oxides in the second-doped metal oxide particles and the metal oxides in the second-undoped metal oxide particles each independently include, but are not limited to, one or more of MoO3, WO3, NiO, CrO3, CuO, Cu2O, and V2O5. The doping elements in the second-doped metal oxide particles include, but are not limited to, one or more of Mo, W, Ni, Cr, Cu, and V. The metal sulfides include, but are not limited to, one or more of CuS, MoS3, and WS3. The metal selenides include, but are not limited to, one or more of MoSe3 and WSe3. The metal nitrides include, but are not limited to, p-type gallium nitride.

[0107] In some embodiments, the content of the dopant element in the first doped metal oxide particle is 1 to 5 wt%, for example, 1 wt%, 2 wt%, 3 wt%, 4 wt%, 5 wt%, and any range between two values.

[0108] In some embodiments, the content of the dopant element in the second doped metal oxide particle is 1 to 5 wt%, for example, 1 wt%, 2 wt%, 3 wt%, 4 wt%, 5 wt%, and any range between two values.

[0109] In some embodiments, the thickness of the anode 10 is 100–200 nm; the thickness of the cathode 30 is 30–80 nm; the thickness of the light-emitting layer 20 is 30–80 nm; the thickness of the hole transport layer 40 is 20–60 nm; and the thickness of the electron transport layer 50 is 20–60 nm.

[0110] It is understood that the optoelectronic device 100 may also be provided with some functional layers that are conventionally used in optoelectronic devices and help to improve the performance of optoelectronic devices, such as electron blocking layer, hole blocking layer, electron injection layer, interface modification layer, etc.

[0111] It is understood that the materials of each layer of the optoelectronic device 100 can be adjusted according to the light emission requirements of the optoelectronic device 100.

[0112] In some embodiments, the optoelectronic device 100 further includes a substrate disposed on the side of the anode 10 away from the light-emitting layer 20, or the substrate disposed on the side of the cathode 30 away from the light-emitting layer 20.

[0113] The substrate can be a rigid substrate or a flexible substrate. In some embodiments, the substrate material may include, but is not limited to, one or more of glass, silicon wafer, polycarbonate, polymethyl methacrylate, polyethylene terephthalate, polyethylene naphthalate, polyamide, and polyethersulfone.

[0114] It is understood that the optoelectronic device 100 can be an upright optoelectronic device or an inverted optoelectronic device. The optoelectronic device 100 can be a quantum dot optoelectronic device or an organic optoelectronic device.

[0115] Fifthly, embodiments of this application also provide a display device, the display device including the optoelectronic device 100.

[0116] The display device can be any electronic product with display function, including but not limited to smartphones, tablets, laptops, digital cameras, digital camcorders, smart wearable devices, smart weighing scales, in-vehicle displays, televisions, or e-book readers. Among them, smart wearable devices can be, for example, smart bracelets, smartwatches, virtual reality (VR) headsets, etc.

[0117] The present application will be specifically described below through specific embodiments. The following embodiments are only some embodiments of the present application and are not intended to limit the present application.

[0118] Example 1

[0119] The method for fabricating the optoelectronic device in this embodiment includes:

[0120] Step 1: Provide an ITO anode glass substrate. Use a cotton swab dipped in a small amount of soapy water to wipe the ITO surface to remove visible impurities. Then, use deionized water, acetone, ethanol, and isopropanol for ultrasonic cleaning for 15 minutes. Finally, dry it with nitrogen gas for later use.

[0121] Step 2: Mix TFB, neopentyl thiocyanate and solvent chlorobenzene to obtain a mixed solution, wherein the mass ratio of TFB to neopentyl thiocyanate is 25:1. Spin-coat the mixed solution onto the anode surface at a speed of 3000 rpm for 30 seconds, and then anneal at 120°C for 10 minutes to obtain a hole transport layer with a thickness of 30 nm.

[0122] Step 3: Spin-coat a quantum dot solution with a concentration of 20 mg / mL (solvent is n-hexane) onto the hole transport layer at a spin speed of 3000 rpm for 30 seconds, followed by annealing at 100°C for 5 min to obtain a light-emitting layer with a thickness of 30 nm.

[0123] Step 4: Spin-coat an ethanol solution of ZnO onto the light-emitting layer at a speed of 3000 rpm for 30 seconds, followed by annealing at 100°C for 15 minutes to obtain an electron transport layer with a thickness of 20 nm.

[0124] Step 5: In a vacuum coating machine, with a vacuum level not exceeding 3×10⁻⁶ -4 In an environment of Pa, an Ag layer with a thickness of 40 nm is sequentially deposited on the electron transport layer to obtain a cathode;

[0125] Step 6: Packaging to obtain an optoelectronic device, which is a quantum dot light-emitting diode.

[0126] Example 2

[0127] This embodiment is basically the same as Embodiment 1, except that the mass ratio of TFB to neopentyl thiocyanate is 50:1 in this embodiment.

[0128] Example 3

[0129] This embodiment is basically the same as Embodiment 1, except that the mass ratio of TFB to neopentyl thiocyanate is 10:1 in this embodiment.

[0130] Example 4

[0131] This embodiment is basically the same as Embodiment 1, except that ammonium phenylthiocyanate is used in this embodiment to replace neopentylthiocyanate in Embodiment 1.

[0132] Example 5

[0133] This embodiment is basically the same as Embodiment 1, except that benzyl thiocyanate ammonium is used in this embodiment to replace neopentyl thiocyanate ammonium in Embodiment 1.

[0134] Example 6

[0135] This embodiment is basically the same as Embodiment 1, except that in this embodiment, ammonium dodecyl thiocyanate is used instead of neopentyl thiocyanate in Embodiment 1.

[0136] Example 7

[0137] This embodiment is basically the same as that of Embodiment 1, except that in this embodiment, phenylethyl ammonium thiocyanate is used instead of neopentyl ammonium thiocyanate in Embodiment 1.

[0138] Example 8

[0139] This embodiment is basically the same as that of Embodiment 1, except that in this embodiment, ethyl ammonium thiocyanate is used instead of neopentyl ammonium thiocyanate in Embodiment 1.

[0140] Example 9

[0141] This embodiment is basically the same as Embodiment 1, except that tetrabutylammonium thiocyanate is used in this embodiment to replace neopentylammonium thiocyanate in Embodiment 1.

[0142] Example 10

[0143] This embodiment is basically the same as embodiment 1, except that PVK is used to replace TFB in embodiment 1 in this embodiment.

[0144] Example 11

[0145] This embodiment is basically the same as Embodiment 1, except that in this embodiment:

[0146] The hole transport layer is prepared by mixing TFB and solvent chlorobenzene to obtain a mixed solution, and then spin-coating the mixed solution onto the anode surface at a spin speed of 3000 rpm for 30 s. After spin-coating, the solution is annealed at 12°C for 10 min to obtain a hole transport layer with a thickness of 30 nm.

[0147] The electron transport layer is prepared by mixing N-type organic material CNT2T, neopentyl thiocyanate and chlorobenzene to obtain a mixed solution, wherein the mass ratio of CNT2T to neopentyl thiocyanate is 30:1. The mixed solution is spin-coated onto the surface of the light-emitting layer at a speed of 3000 rpm for 30 s, followed by annealing at 12°C for 10 min to obtain an electron transport layer with a thickness of 30 nm.

[0148] Example 12

[0149] This embodiment is basically the same as embodiment 11, except that the mass ratio of CNT2T to neopentyl thiocyanate is 50:1 in this embodiment.

[0150] Example 13

[0151] This embodiment is basically the same as embodiment 11, except that the mass ratio of CNT2T to neopentyl thiocyanate is 10:1 in this embodiment.

[0152] Example 14

[0153] This embodiment is basically the same as embodiment 11, except that ammonium phenylthiocyanate is used in this embodiment to replace the neopentylthiocyanate in embodiment 11.

[0154] Example 15

[0155] This embodiment is basically the same as that of embodiment 11, except that benzyl thiocyanate ammonium is used in this embodiment to replace neopentyl thiocyanate ammonium in embodiment 11.

[0156] Example 16

[0157] This embodiment is basically the same as that of embodiment 11, except that in this embodiment, ammonium dodecyl thiocyanate is used instead of neopentyl thiocyanate in embodiment 11.

[0158] Example 17

[0159] This embodiment is basically the same as that of embodiment 11, except that in this embodiment, phenylethyl ammonium thiocyanate is used to replace neopentyl ammonium thiocyanate in embodiment 11.

[0160] Example 18

[0161] This embodiment is basically the same as that of embodiment 11, except that in this embodiment, ethyl ammonium thiocyanate is used instead of neopentyl ammonium thiocyanate in embodiment 11.

[0162] Example 19

[0163] This embodiment is basically the same as embodiment 11, except that tetrabutylammonium thiocyanate is used in this embodiment to replace neopentylammonium thiocyanate in embodiment 11.

[0164] Example 20

[0165] This embodiment is basically the same as embodiment 11, except that in this embodiment, the N-type organic material POT2T is used to replace the N-type organic material CNT2T in embodiment 11.

[0166] Example 21

[0167] This embodiment is basically the same as Embodiment 1, except that in this embodiment:

[0168] The electron transport layer is prepared by mixing N-type organic material CNT2T, neopentyl thiocyanate and chlorobenzene to obtain a mixed solution, wherein the mass ratio of CNT2N to neopentyl thiocyanate is 30:1. The mixed solution is spin-coated onto the surface of the light-emitting layer at a speed of 3000 rpm for 30 s, followed by annealing at 120°C for 10 min to obtain an electron transport layer with a thickness of 30 nm.

[0169] Comparative Example 1

[0170] This comparative example is basically the same as Example 1, except that the method for preparing the hole transport layer in this comparative example includes:

[0171] TFB and chlorobenzene were mixed to obtain a mixed solution. The mixed solution was then spin-coated onto the anode surface at a speed of 3000 rpm for 30 s. The solution was then annealed at 120 °C for 10 min to obtain a hole transport layer with a thickness of 30 nm.

[0172] Comparative Example 2

[0173] This comparative example is basically the same as Example 11, except that the method for preparing the electron transport layer in this comparative example includes:

[0174] The N-type organic material CNT2T and the solvent chlorobenzene were mixed to obtain a mixed solution. The mixed solution was then spin-coated onto the surface of the light-emitting layer at a speed of 3000 rpm for 30 s. The mixture was then annealed at 120°C for 10 min to obtain an electron transport layer with a thickness of 30 nm.

[0175] The hole mobility, electron mobility, surface roughness of the hole transport layer, and surface roughness of the electron transport layer of Examples 1-21 and Comparative Examples 1-2 were tested respectively, and the test results are shown in Table 1.

[0176] The maximum brightness L of the optoelectronic devices in Examples 1-21 and Comparative Examples 1-2 max The current efficiency (CE), lifespan (T95), and lifespan (T95@1000nit) were tested. The test results are shown in Table 1.

[0177] The carrier mobility test method is as follows: The current density-voltage curves of the optoelectronic devices (single carrier transport thin-film devices HOD / EOD) of Examples 1-21 and Comparative Examples 1-2 are measured. The EOD structure is anode / quantum dot emitting layer / electron transport layer / cathode, and the HOD structure is anode / hole transport layer / quantum dot emitting layer / cathode. The materials of each layer of the semi-device are respectively from the examples and comparative examples. The space charge confinement current (SCLC) region in the current density-voltage curve is obtained, and then the value is calculated according to the formula J = (9 / 8)ε. r ε0μ e V 2 / d 3 Calculate the electron / hole mobility, where J represents the current density in mA / cm². -2 ;ε r ε₀ represents the relative permittivity, and μ represents the vacuum permittivity. e Electron / hole mobility is expressed in cm. 2 V -1 s -1 V represents the driving voltage, with units of V; d represents the film thickness, with units of m.

[0178] Maximum brightness L max The lifetime T95 and lifetime T95@1000nit test methods are as follows: In CDA gas, under a constant current drive of 2mA, the time it takes for the device brightness to decay to a certain percentage of its maximum brightness is measured. The time for the brightness to decay to 95% of the maximum brightness is defined as T95, and this lifetime is the measured lifetime. To shorten the lifetime testing cycle, device lifetime testing is usually performed at high brightness by accelerating device aging, and the lifetime at low brightness is obtained by fitting the decay fitting formula. For example, the lifetime at 1000 nits is denoted as T95@1000nits, and the calculation formula is:

[0179]

[0180] Among them, T95 L The lifespan at low brightness is typically taken as the lifespan at 1000 nits, T95. H The lifetime at high brightness, i.e., the measured lifetime, L H L is the maximum brightness that the device accelerates to. L The typical value is 1000 nits, where A is the acceleration factor, which is set to 1.7.

[0181] The test method for current efficiency (CE) is as follows: using the Fostar FPD optical property measurement equipment, an efficiency test system is built by controlling the QE PRO spectrometer, Keithley 2400, and Keithley 6485 through LabVIEW, and parameters such as voltage, current, brightness, and emission spectrum are measured, and the current efficiency is calculated.

[0182] Roughness was measured by atomic force microscopy (AFM).

[0183] Table 1:

[0184]

[0185]

[0186] As shown in Table 1:

[0187] Compared to the hole transport layer of Comparative Example 1, the hole transport layers of Examples 1-10 have higher hole mobility. Compared to the electron transport layer of Comparative Example 2, the electron transport layers of Examples 11-20 have higher hole mobility. It can be seen that adding the ammonium thiocyanate salt described in this application to the organic hole transport layer or organic electron transport layer can effectively improve the carrier mobility of the hole transport layer or electron transport layer. The reason may be that the ammonium thiocyanate salt can promote the cross-linking between the molecules of the organic semiconductor material, which can make the prepared film have a lower roughness, thereby improving the carrier mobility and extending the carrier lifetime.

[0188] Compared to the optoelectronic device of Comparative Example 1, the optoelectronic devices of Examples 1-10 and 21 have higher brightness, efficiency and lifetime. Compared to the optoelectronic device of Comparative Example 2, the optoelectronic devices of Examples 11-20 have higher brightness, efficiency and lifetime. It can be seen that adding the ammonium thiocyanate salt described in this application to the organic hole transport layer or organic electron transport layer of the optoelectronic device can effectively improve the brightness, efficiency and lifetime of the optoelectronic device. The reason may be that the ammonium thiocyanate salt can improve the carrier mobility and stability of the organic hole transport layer or organic electron transport layer.

[0189] The technical solutions provided by the embodiments of this application have been described in detail above. Specific examples have been used to illustrate the principles and implementation methods of this application. The description of the above embodiments is only for the purpose of helping to understand the method and core ideas of this application. At the same time, for those skilled in the art, there will be changes in the specific implementation methods and application scope based on the ideas of this application. Therefore, the content of this specification should not be construed as a limitation of this application.

Claims

1. A composite material, characterized in that, This includes organic semiconductor materials and ammonium thiocyanate.

2. The composite material as described in claim 1, characterized in that, The ammonium thiocyanate salt has the structural formula shown in formula (I): Among them, R1, R2, R3, and R4 are each independently selected from H, substituted or unsubstituted C1 to C2. 20 Alkyl, substituted or unsubstituted silyl, -CF3, C2 to C 20 An olefinic group, an aromatic group having 6 to 60 substituted or unsubstituted ring atoms, a heteroaromatic group having 5 to 60 substituted or unsubstituted ring atoms, or a combination of these groups; The substituents include halogens, hydroxyl groups, nitro groups, cyano groups, isocyano groups, silyl groups, and C1-C2 groups. 20 Alkyl, C1-C 20 Alkoxy, C1-C 20 One or more of the following: alkylthio, aryl with 6 to 60 ring atoms, aryloxy with 6 to 60 ring atoms, and arylthio with 6 to 60 ring atoms.

3. The composite material as described in claim 2, characterized in that, It also includes at least one of the following features (1) to (9): (1) R1, R2, R3, and R4 are each independently selected from substituted or unsubstituted C1 to C4. 15 Alkyl, substituted or unsubstituted silyl, -CF3, C2 to C 15 olefinic group, substituted or unsubstituted aromatic group having 6 to 30 ring atoms, substituted or unsubstituted heteroaromatic group having 5 to 30 ring atoms, or combination of these groups; (2) R1, R2, R3, and R4 are each independently selected from substituted or unsubstituted C1 to C4. 10 Alkyl, substituted or unsubstituted silyl, -CF3, C2 to C 10 olefinic group, substituted or unsubstituted aromatic group having 6 to 20 ring atoms, substituted or unsubstituted heteroaromatic group having 5 to 20 ring atoms, or combination of these groups; (3) R1, R2, R3, and R4 are each independently selected from substituted or unsubstituted C1-C8 alkyl groups, substituted or unsubstituted silyl groups, -CF3, C2-C8 olefinic groups, substituted or unsubstituted aromatic groups having 6 to 15 ring atoms, substituted or unsubstituted heteroaromatic groups having 5 to 15 ring atoms, or combinations of these groups. (4) R1, R2, R3, and R4 are each independently selected from substituted or unsubstituted C1-C8 alkyl, -CF3, C2-C8 olefin, substituted or unsubstituted aromatic group with 6 to 15 ring atoms, substituted or unsubstituted heteroaromatic group with 5 to 12 ring atoms, or combinations of these groups. (5) The substituents include halogen, hydroxyl, nitro, cyano, isocyano, silyl, C1-C1, C2-C3, C4-C5, C6-C6, C7 ... 15 Alkyl, C1-C 15 Alkoxy, C1-C 15 One or more of the following: alkylthio, aryl with 6 to 30 ring atoms, aryloxy with 6 to 30 ring atoms, and arylthio with 6 to 30 ring atoms; (6) The substituents include halogen, hydroxyl, nitro, cyano, isocyano, silyl, C1-C1, C2-C3, C4-C5, C6-C6 ... 10 Alkyl, C1-C 10 Alkoxy, C1-C 10 One or more of the following: alkylthio, aryl with 6 to 20 ring atoms, aryloxy with 6 to 20 ring atoms, and arylthio with 6 to 20 ring atoms; (7) The substituents include one or more of the following: halogen, hydroxyl, nitro, cyano, isocyano, silyl, C1-C8 alkyl, C1-C8 alkoxy, C1-C8 alkylthio, aryl with 6 to 15 ring atoms, aryloxy with 6 to 15 ring atoms, and arylthio with 6 to 15 ring atoms. (8) The substituents include one or more of the following: halogen, hydroxyl, nitro, cyano, isocyano, silyl, C1-C5 alkyl, C1-C5 alkoxy, C1-C5 alkylthio, aryl with 6 to 10 ring atoms, aryloxy with 6 to 10 ring atoms, and arylthio with 6 to 10 ring atoms. (9) The substituents include one or more of halogens, hydroxyl groups, nitro groups, C1 to C5 alkyl groups, and aryl groups with 6 to 10 ring atoms.

4. The composite material according to any one of claims 1 to 2, characterized in that, The ammonium thiocyanate salt includes one or more of ammonium thiocyanate, alkyl ammonium thiocyanate, and aryl ammonium thiocyanate, wherein the alkyl ammonium thiocyanate salt includes one or more of ethyl ammonium thiocyanate, tetrabutyl ammonium thiocyanate, neopentyl ammonium thiocyanate, and n-dodecyl ammonium thiocyanate; and the aryl ammonium thiocyanate salt includes one or more of phenylammonium thiocyanate, benzyl ammonium thiocyanate, and phenylethyl ammonium thiocyanate; and / or In the composite material, the mass ratio of the organic semiconductor material to the ammonium thiocyanate salt is in the range of (10–50):1; and / or The conductivity of the organic semiconductor material is 10. -10 ~100S / cm.

5. The composite material as described in claim 1, characterized in that, The organic semiconductor material includes one or more of N-type organic materials and P-type organic materials, wherein: The N-type organic materials include diphenyl[4-(triphenylsilyl)phenyl]phosphine oxide, 1,3,5-tris((3-pyridyl)-3-phenyl)benzene, 2-(4-biphenyl)-5-phenyloxadiazole, bis(10-hydroxybenzo[h]quinoline)beryllium, 3-(biphenyl-4-yl)-5-(4-tert-butylphenyl)-4-phenyl-4H-1,2,4-triazole, and 2,7-bis(diphenylphosphine oxide)-9,9 '-spirobis[fluorene], 1,3,5-tris(1-phenyl-1H-benzimidazol-2-yl)benzene, 4,6-bis(3,5-di(3-pyridinylphenyl)-2-methylpyrimidine, 4,7-diphenyl-1,10-phenanthroline, 2-(4'-tert-butylphenyl)-5-(4'-biphenyl)-1,3,4-oxadiazole, 2,9-dimethyl-4,7-diphenyl-1,10-o-diazaphenanthroline, 4,7- Diphenyl-1,10-o-phenanthroline, bis(2-methyl-8-hydroxyquinoline-N1,O8)-1,1'-biphenyl-4-hydroxy)aluminum, 8-hydroxyquinoline aluminum, 2,7-bis(diphenylphosphine oxide)-9,9'-spirobis[fluorene], poly[9,9-dioctylfluorene-9,9-bis(N,N-dimethylaminopropyl)fluorene], 9,9-bis[3'-(N,N-dimethylamino)propyl-2,7-fluorene]- Alternating-2,7-(9,9-dioctylfluorene), 1,3-bis[5-(4-tert-butylphenyl)-2-[1,3,4]oxadiazolyl]benzene, 3',3'",3'""-(1,3,5-triazine-2,4,6-triyl)-tris(([1,1'-biphenyl]-3-carboxynitrile)), 2,4,6-tris[3-(diphenylphosphino)phenyl]-1,3,5-triazole; and / or The P-type organic materials include 4,4'-N,N'-dicarbazolyl-biphenyl, poly[bis(4-phenyl)(2,4,6-trimethylphenyl)amine], N,N'-diphenyl-N,N'-bis(1-naphthyl)-1,1'-biphenyl-4,4”-diamine, N,N'-diphenyl-N,N'-bis(3-methylphenyl)-(1,1'-biphenyl)-4,4'-diamine, poly(N,N'-bis(4-butylphenyl)-N,N'-bis(phenyl)biphenylamine), N,N'-bis(3-methylphenyl)biphenyl 4,4',4'-bis(phenyl)-spiro, N,N'-bis(4-(N,N'-diphenyl-amino)phenyl)-N,N'-diphenylbenzidine, 4,4',4'-tris(N-carbazolyl)-triphenylamine, 4,4',4'-tris(N-3-methylphenyl-N-phenylamino)triphenylamine, poly[(9,9'-dioctylfluorene-2,7-diyl)-co-(4,4'-(N-(4-sec-butylphenyl)diphenylamine))], poly(N-vinylcarbazole) and its derivatives, N,N'-bis( 1-Naphthyl)-N,N'-diphenyl-1,1'-biphenyl-4-4'-diamine, spiroNPB, poly(phenylenevinylene), poly[2-methoxy-5-(2-ethylhexyloxy)-1,4-phenylenevinylene], poly[2-methoxy-5-(3',7'-dimethyloctyloxy)-1,4-phenylenevinylene], 2,2',7,7'-tetrakis[N,N-di(4-methoxyphenyl)amino]-9,9'-spirodifluorene, 4,4'-cyclohexyldi[N,N-di(4-methyl [Phenylaniline], 1,3-bis(carbazole-9-yl)benzene, polyaniline, polypyrrole, poly(p-)phenylenevinylene, aromatic tertiary amine, polynuclear aromatic tertiary amine, 4,4'-bis(p-carbazole)-1,1'-biphenyl compounds, N,N,N',N'-tetraarylbenzidine, PEDOT:PSS and its derivatives, polymethacrylates and their derivatives, poly(9,9-octylfluorene) and its derivatives, poly(spirofluorene) and its derivatives, doped graphene, undoped graphene, C60 and one or more of these; and / or The N-type organic material is 3',3'",3'""-(1,3,5-triazine-2,4,6-triyl)-tris(([1,1'-biphenyl]-3-carboxynitrile)), and the ammonium thiocyanate salt includes one or more of neopentylammonium thiocyanate, phenylammonium thiocyanate, benzylammonium thiocyanate, n-dodecylammonium thiocyanate, phenylethylammonium thiocyanate, ethylammonium thiocyanate, and tetrabutylammonium thiocyanate; or, the N-type organic material is 2,4,6-tris[3-(diphenylphosphoxy)phenyl]-1,3,5-triazole, and the ammonium thiocyanate salt is neopentylammonium thiocyanate; and / or The P-type organic material is poly[(9,9'-dioctylfluorene-2,7-diyl)-co-(4,4'-(N-(4-sec-butylphenyl)diphenylamine))], and the ammonium thiocyanate salt includes one or more of neopentylammonium thiocyanate, phenylammonium thiocyanate, benzylammonium thiocyanate, n-dodecylammonium thiocyanate, phenylethylammonium thiocyanate, ethylammonium thiocyanate, and tetrabutylammonium thiocyanate; or, the P-type organic material is poly(N-vinylcarbazole), and the ammonium thiocyanate salt is neopentylammonium thiocyanate.

6. A thin film, characterized in that, The film includes the composite material described in any one of claims 1 to 5.

7. The thin film as claimed in claim 6, characterized in that, The root mean square surface roughness of the thin film is 1–5 nm; and / or The thin film is an electron transport thin film or a hole transport thin film.

8. A method for preparing a thin film, characterized in that, Includes the following steps: A mixed solution is provided, the mixed solution comprising the composite material and solvent according to any one of claims 1 to 4; The mixed solution is deposited and annealed to obtain a thin film.

9. The preparation method according to claim 8, characterized in that, The concentration range of the mixed solution is 20–40 mg / mL; and / or The mass ratio of the organic semiconductor material to the ammonium thiocyanate salt is in the range of (10–50):1; and / or The annealing is hot annealing, the temperature range of the hot annealing is 100–150°C, and the annealing time range is 5–20 min; and / or The solvent includes polar and non-polar solvents. The polar solvent includes one or more of dimethyl ether, tetraethylene glycol dimethyl ether, propylene glycol methyl ether acetate, formamide, trifluoroacetic acid, dimethyl sulfoxide, acetonitrile, N,N-dimethylformamide, hexamethylphosphoramide, methanol, acetic acid, ethanol, isopropanol, pyridine, tetramethylethylenediamine, acetone, triethylamine, n-butanol, dioxane, tetrahydrofuran, methyl formate, tributylamine, methyl ethyl ketone, trioctylamine, dimethyl carbonate, diethyl ether, isopropyl ether, n-butyl ether, trichloroethylene, and diphenyl ether. The non-polar solvent includes one or more of n-octane, isooctane, n-hexane, cyclohexane, ethyl acetate, benzene, toluene, chlorobenzene, chloroform, carbon tetrachloride, dichloromethane, dichloroethane, and carbon disulfide.

10. An optoelectronic device, characterized in that, The optoelectronic device comprises an anode, a light-emitting layer, and a cathode stacked sequentially. It further includes a hole transport layer and / or an electron transport layer, wherein the hole transport layer is located between the anode and the light-emitting layer, and the electron transport layer is located between the light-emitting layer and the cathode. The hole transport layer is made of the composite material described in any one of claims 1 to 5, wherein the organic semiconductor material in the composite material is a p-type organic material; and / or, The electron transport layer is made of the composite material described in any one of claims 1 to 5, wherein the organic semiconductor material in the composite material is an N-type organic material.

11. The optoelectronic device as described in claim 10, characterized in that, The anode and the cathode each independently comprise a doped metal oxide particle electrode, a composite electrode, a graphene electrode, a carbon nanotube electrode, a metal element electrode, or an alloy electrode. The doped metal oxide particle electrode is made of one or more of the following materials: indium-doped tin oxide, fluorine-doped tin oxide, antimony-doped tin oxide, aluminum-doped zinc oxide, gallium-doped zinc oxide, indium-doped zinc oxide, magnesium-doped zinc oxide, and aluminum-doped magnesium oxide. The composite electrode comprises one or more of the following: AZO / Ag / AZO, AZO / Al / AZO, ITO / Ag / ITO, ITO / Al / ITO, ZnO / Ag / ZnO, ZnO / Al / ZnO, TiO2 / Ag / TiO2, TiO2 / Al / TiO2, ZnS / Ag / ZnS, or ZnS / Al / ZnS. The metal element electrode is made of one or more of the following: Ag, Al, Cu, Mo, Au, Pt, Ca, Mg, and Ba; and / or The material of the light-emitting layer includes one or more of organic light-emitting materials and quantum dots. The organic light-emitting materials include one or more of 4,4'-bis(N-carbazole)-1,1'-biphenyl:tris[2-(p-tolyl)pyridinium(III), 4,4',4”-tris(carbazole-9-yl)triphenylamine:tris[2-(p-tolyl)pyridinium, diaromatic anthracene derivatives, stilbene aromatic derivatives, pyrene derivatives, fluorene derivatives, TBPe fluorescent materials, TTPX fluorescent materials, TBRb fluorescent materials, DBP fluorescent materials, delayed fluorescent materials, TTA materials, thermally activated delayed materials, polymers containing BN covalent bonds, hybrid local charge transfer excited state materials, excitopolymer light-emitting materials, polyacetylene and its derivatives, poly(p-phenylene) and its derivatives, polythiophene and its derivatives, and polyfluorene and its derivatives.The quantum dots include one or more of single-structure quantum dots, core-shell quantum dots, and perovskite semiconductor materials. The core-shell quantum dots comprise one or more shell layers. The materials of the single-structure quantum dots, the core material of the core-shell quantum dots, and the shell materials of the core-shell quantum dots are each independently selected from one or more of group II-VI compounds, group IV-VI compounds, group III-V compounds, and group I-III-VI compounds. The group II-VI compounds include CdS, CdSe, CdTe, ZnS, ZnSe, ZnTe, ZnO, HgS, HgSe, HgTe, CdSeS, CdSeTe, CdSTe, and ZnS. One or more of the following compounds: SnS, ZnSeTe, ZnSTe, HgSeS, HgSeTe, HgSTe, CdZnS, CdZnSe, CdZnTe, CdHgS, CdHgSe, CdHgTe, HgZnS, HgZnSe, HgZnTe, CdZnSeS, CdZnSeTe, CdZnSTe, CdHgSeS, CdHgSeTe, CdHgSTe, HgZnSeS, HgZnSeTe, and HgZnSTe, wherein the group IV-VI compounds include SnS, SnSe, SnTe, PbS, PbSe, PbTe, SnSeS, SnSeTe, and SnSTe. e, PbSeS, PbSeTe, PbSTe, SnPbS, SnPbSe, SnPbTe, SnPbSSe, SnPbSeTe, SnPbSTe, the III-V compound comprising one or more of GaN, GaP, GaAs, GaSb, AlN, AlP, AlAs, AlSb, InN, InP, InAs, InSb, GaNP, GaNAs, GaNSb, GaPAs, GaPSb, AlNP, AlNAs, AlNSb, AlPAs, AlPSb, InNP, InNAs, InNSb, InPAs, InPSb, GaAlNP, G One or more of aAlNAs, GaAlNSb, GaAlPAs, GaAlPSb, GaInNP, GaInNAs, GaInNSb, GaInPAs, GaInPSb, InAlNP, InAlNAs, InAlNSb, InAlPAs, and InAlPSb, wherein the I-III-VI group compounds include one or more of CuInS2, CuInSe2, and AgInS2; wherein the perovskite semiconductor material includes doped or undoped inorganic perovskite semiconductors or organic-inorganic hybrid perovskite semiconductors, wherein the general structural formula of the inorganic perovskite semiconductor is AMX3, where A is Cs; + Ions, where M is a divalent metal cation, including Pb 2+ Sn 2+ Cu 2+ Ni 2+ Cd 2+ Cr 2+ Mn 2+ Co 2+ Fe 2+ 、Ge 2+ Yb 2+ Eu 2+ One or more of them, where X is a halide anion, including Cl. - ,Br - I - One or more of the following; the general structural formula of the organic-inorganic hybrid perovskite semiconductor is BMX3, where B is an organic amine cation, including CH3(CH2). n-2 NH3 + Or [NH3(CH2)] n NH3] 2+ Where n≥2, M is a divalent metal cation, including Pb 2+ Sn 2+ Cu 2+ Ni 2+ Cd 2+ Cr 2+ Mn 2+ Co 2+ Fe 2+ 、Ge 2+ Yb 2+ Eu 2+ One or more of them, where X is a halide anion, including Cl. - ,Br - I - One or more of them.

12. A display device, characterized in that, Includes the optoelectronic device according to any one of claims 10 to 11.

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