Display device

Abstract

A display device according to an embodiment of the present specification includes a substrate including a display area and a bending area, a connection line passing through the bending area of the substrate, a planarization layer covering the connection line in the bending area, a stress relief layer disposed on the planarization layer in the bending area, and a metal mesh pattern disposed on the connection line in the bending area, wherein a recess is disposed in an upper surface of the stress relief layer, and the metal mesh pattern is disposed to correspond to the recess.

Description

Technical Field

[0001] Display devices are used in various electronic devices such as televisions, mobile phones, laptops, and tablets. Background Technology

[0002] Examples of display devices include self-emissive organic light-emitting diode (OLED) display devices and liquid crystal display (LCD) devices that require a separate light source.

[0003] The bezel area of ​​a display device is a factor that reduces aesthetics and immersion due to its visibility to users. Recently, narrow-bezel displays that reduce the bezel area where images are not displayed on the device have become a focus. Summary of the Invention

[0004] Research is underway to reduce the bezel area of ​​a display device that is visible to the user by using a flexible substrate to bend the non-display area of ​​a display panel and hiding a portion of the non-display area on the back surface of the display area. Connection lines for electrically connecting the display area to the pad area can be provided in the bent area of ​​the display panel, and an organic material can be used to cover the connection lines.

[0005] Due to the curvature of the curved area of ​​the display panel, tensile stress can be applied to the organic material and connecting lines in the curved area, and therefore cracks may appear in the organic material and connecting lines in the curved area. Cracks appearing in the organic material located in the upper part of the curved area where relatively large tensile stress is applied may extend to the connecting lines, thus causing cracks in the connecting lines.

[0006] The purpose of this specification is to provide a display device in which, when the display panel is bent, the tensile stress applied to the organic material layer in the bending area can be effectively dispersed, and cracks can be prevented in the organic material layer.

[0007] The purpose of this specification is also to provide a display device in which the curvature of the curved area of ​​the display panel can be further reduced, thereby further reducing the lower bezel area of ​​the display panel.

[0008] The purpose of this specification is also to provide a display device that can reduce the production energy required for production and reduce greenhouse gas emissions.

[0009] The purpose of this specification is not limited to the above-mentioned purposes, and other purposes not mentioned will be clearly understood by those skilled in the art based on the following description.

[0010] According to embodiments of this specification, a display device is provided, comprising: a substrate including a display area and a curved area; a connecting line passing through the curved area of ​​the substrate; a planarization layer covering the connecting line in the curved area; a stress relief layer disposed on the planarization layer in the curved area; and a metal mesh pattern disposed on the connecting line in the curved area, wherein a groove is provided in the upper surface of the stress relief layer, and the metal mesh pattern is configured to correspond to the groove.

[0011] According to embodiments of this specification, a display device is provided, comprising: a substrate including a display area and a curved area; a first organic material layer disposed in the curved area of ​​the substrate; a connecting line passing through the curved area of ​​the substrate and disposed on the first organic material layer; a second organic material layer covering the connecting line in the curved area; a third organic material layer disposed on the second organic material layer in the curved area; and a metal mesh pattern disposed on the connecting line in the curved area, wherein a groove is provided in the upper surface of the third organic material layer, and the metal mesh pattern is configured to correspond to the groove.

[0012] According to the display device according to the embodiments of this specification, by including a metal mesh pattern embedded in an organic material layer disposed on a connecting line in the bending region, the tensile stress applied to the organic material layer when the bending region of the display device is bent can be effectively dispersed. Therefore, cracks can be prevented from appearing in the organic material layer when the bending region of the display device is bent, and cracks in the organic material layer can be prevented from propagating and causing cracks in the connecting line.

[0013] Furthermore, in the display device according to the embodiments of this specification, the tensile stress applied to the organic material layer when the curved area of ​​the display device is bent can be dispersed, and the curvature of the curved area can be further reduced. Therefore, the lower bezel area of ​​the display device according to the embodiments of this specification can be further reduced.

[0014] Furthermore, in the display device according to the embodiments of this specification, since the tensile stress applied to the organic material layer when the curved area of ​​the display device is bent can be dispersed, the resin layer that was previously additionally coated on the curved area to reduce the tensile stress by adjusting the position of the neutral surface of the curved area can be omitted.

[0015] According to the embodiments of this specification, since the defect rate of the display device caused by cracks in the bending area is low, the production energy required to produce the display device can be reduced, and greenhouse gas emissions can be reduced.

[0016] The effects of this specification are not limited to those described above, and based on the following detailed description, those skilled in the art will be able to clearly understand other effects not mentioned. Attached Figure Description

[0017] Figure 1 This is a plan view of a display device according to one embodiment of this specification.

[0018] Figure 2 It is along Figure 1 A cross-sectional view of the display device in line II-II.

[0019] Figure 3 yes Figure 1 An enlarged view of region III in the image.

[0020] Figure 4 It is along Figure 3 A cross-sectional view of the display device with line IV-IV in the middle.

[0021] Figures 5A to 5C This is a cross-sectional view illustrating a method for manufacturing a metal mesh pattern according to one embodiment of this specification.

[0022] Figure 6 This is a plan view showing the curved region of a display device according to one embodiment of this specification.

[0023] Figure 7 It is along Figure 6 A cross-sectional view of the display device along line VII-VII.

[0024] Figures 8A to 8C This is a cross-sectional view illustrating a method for manufacturing a metal mesh pattern according to one embodiment of this specification.

[0025] Figure 9 This is a plan view showing a metal mesh pattern of a display device according to one embodiment of this specification.

[0026] Figure 10 This is a plan view showing a metal mesh pattern of a display device according to one embodiment of this specification. Detailed Implementation

[0027] The advantages and features of this specification, as well as the methods for implementing them, will become clear from the following detailed description of the embodiments in conjunction with the accompanying drawings. However, this specification is not limited to the embodiments disclosed below, but will be implemented in various different forms. These embodiments are provided only to make the disclosure of this specification complete and to fully inform those skilled in the art of the scope of this specification.

[0028] Since the shapes, sizes, ratios, angles, numbers, etc., disclosed in the drawings used to describe embodiments of this specification are illustrative, this specification is not limited to the items shown. Throughout this specification, the same reference numerals denote the same parts. Furthermore, in describing this specification, detailed descriptions of related known technologies are omitted where it is determined that such descriptions might unnecessarily obscure the essential points of this specification. When terms such as "comprising," "having," or "consisting of" are used herein, additional parts may be added unless "only" is used. When a part is indicated in the singular, it includes cases where the part is provided as a plurality of parts, unless otherwise specifically stated.

[0029] When interpreting a component, even without a separate explicit description of the tolerance margin, the component is interpreted as including the tolerance margin.

[0030] When describing positional relationships, for example, when using "on top of," "above," "below," "next to," etc. to describe the positional relationship between two parts, one or more other parts can be positioned between the two parts unless "immediately adjacent" or "directly" is used.

[0031] When describing temporal relationships, the use of terms such as "after," "following," "then," and "before" can include non-continuous cases unless "immediately after" or "directly" is used.

[0032] Although terms such as "first" and "second" are used to describe various components, these components are not limited by these terms. These terms are only used to distinguish one component from another. Therefore, within the technical spirit of this specification, the first component described below can be a second component.

[0033] In the description of the components in this specification, terms such as first, second, A, B, (a), and (b) may be used. These terms are used only for the purpose of distinguishing one component from another, and the nature, order, sequence, etc., of the corresponding components are not limited by these terms.

[0034] When a particular component is described as being “connected,” “coupled,” “linked,” or “attached” to another component, that particular component may be directly connected, coupled, linked, or attached to the other component. However, it should be understood that, unless otherwise specifically stated, another component may be inserted between components that may be indirectly connected, coupled, linked, or attached.

[0035] When a component or layer is described as "in contact" or "overlapping" with another component or layer, the component or layer may be in direct contact or directly overlap with the other component or layer, but it should be understood that, unless otherwise specifically stated, another component may be inserted between components that may be in indirect contact or indirectly overlap with each other.

[0036] It should be understood that "at least one" includes any combination of one or more of the associated components. For example, "at least one of the first component, the second component, and the third component" can include not only the first component, the second component, or the third component, but also any combination of two or more of the first component, the second component, and the third component.

[0037] The terms “first direction,” “second direction,” “third direction,” “X-axis direction,” “Y-axis direction,” and “Z-axis direction” should not be interpreted as merely a geometric relationship in which the relationship between them is perpendicular, but can refer to a wider range of directions within which the configuration in this specification can be functionally effective.

[0038] Features of the various embodiments described herein may be coupled or combined in part or in whole, various technical interactions and drives are possible, and the embodiments may be implemented independently of each other or together in an associated relationship.

[0039] In the following description, various embodiments of this specification will be described in detail with reference to the accompanying drawings.

[0040] Figure 1 This is a plan view of a display device according to one embodiment of this specification;

[0041] Reference Figure 1 According to one embodiment of this specification, the display device may include a display panel 100, a data driver DIC, a flexible printed circuit board, a timing controller, a power supply, etc.

[0042] The display panel 100 may include a display area AA and a non-display area NAA. The display area AA and the non-display area NAA may be areas of the substrate. The display area AA is the area where images are displayed. The non-display area NAA is the area where no images are displayed and is located outside the display area AA.

[0043] The display area AA is the area containing multiple pixels. Each pixel can include multiple subpixels. The non-display area NAA is the area where gate drivers, various interconnect lines, various power supply lines, etc., are located.

[0044] The display area AA includes multiple data lines DL and multiple gate lines GL arranged to intersect each other. The multiple gate lines GL may extend, for example, in a first direction DR1, and the multiple data lines DL may extend, for example, in a second direction DR2. The data lines DL transmit data signals generated by the data driver DIC to the sub-pixels, and the gate lines GL transmit gate signals generated by the gate driver to the sub-pixels.

[0045] The gate driver can be disposed, for example, in a non-display area NAA located to the left and right of the display area AA. The gate driver can be disposed directly on the substrate of the display panel 100 in the form of an in-panel gate driver (GIP).

[0046] The non-display area NAA can be configured to surround the display area AA. For example, when the display area AA has a quadrilateral shape, the non-display area NAA can be located above, below, to the left, and to the right of the display area AA. The non-display area NAA positioned below the display area AA includes the pad area PA where the data driver DIC and the flexible printed circuit board are joined, the link area LA, and the curved area BA defined between the link area LA and the pad area PA.

[0047] The data driver (DIC) and flexible printed circuit board (PCB) can be bonded to the pad area (PA) via an anisotropic conductive film. The PCB can be bonded to pads (PD) located on the end portions of the PA. Timing controllers and power supplies can be mounted on the PCB.

[0048] A portion of the non-display area NAA of the display panel 100 can be bent at a predetermined curvature. The bent area of ​​the non-display area NAA of the display panel 100 can be defined as the bent area BA.

[0049] Because the curved area BA of the display panel 100 is curved, the pad area PA of the non-display area NAA can be positioned to overlap with the display area AA on the back surface of the display area AA. Therefore, the lower bezel area of ​​the display device that can be identified from the front surface of the display device can be reduced.

[0050] A touch sensor layer 187 can be disposed on the display area AA. The touch sensor layer 187 may include a first touch electrode 183, a first bridge electrode 184, a second touch electrode 185, and a second bridge electrode 186. The first touch electrode 183 and the second touch electrode 185 may have a mesh structure.

[0051] First touch electrodes 183 adjacent to each other in the first direction DR1 can be connected by a first bridge electrode 184. The first bridge electrode 184 can be disposed on a different layer than the first touch electrodes 183. Second touch electrodes 185 adjacent to each other in the second direction DR2 can be connected by a second bridge electrode 186. The second bridge electrode 186 can be disposed on the same layer as the second touch electrodes 185 and integrally formed with the second touch electrodes 185.

[0052] The first touch electrode 183 and the second touch electrode 185 can be connected to the pad PD of the pad area PA via touch wiring TRL and connecting line CNL. The touch wiring TRL can be connected to the connecting line CNL via contact holes in the link area LA. The touch wiring TRL can be formed using the same process as the first touch electrode 183 and the second touch electrode 185. The connecting line CNL can pass through the bending area BA and extend from the link area LA to the pad area PA.

[0053] The data cable DL can be connected to the data driver DIC via the connector cable CNL'. The data cable DL can be connected to the connector cable CNL' via the contact hole in the link area LA. The connector cable CNL' can pass through the bend area BA and extend from the link area LA to the pad area PA.

[0054] Figure 2 It is along Figure 1 A cross-sectional view of the display device in line II-II. Figure 2 A sub-pixel of a display device according to an embodiment of this specification is schematically shown.

[0055] Reference Figure 2 The display device according to the embodiments of this specification may include a substrate 110, a first thin-film transistor 120, a storage capacitor 130, a second thin-film transistor 140, a light-emitting element 160, and a touch sensor layer 187.

[0056] The substrate 110 may include an insulating material. The substrate 110 may include a flexible polymer material. The substrate 110 may have a multilayer structure. For example, the substrate 110 may include a lower substrate layer and an upper substrate layer formed of a polymer material such as polyimide (PI), and an intermediate layer disposed between the lower substrate layer and the upper substrate layer and formed of an inorganic insulating material.

[0057] A buffer layer 112 may be disposed on the substrate 110. The buffer layer 112 may completely cover the display area AA of the substrate 110. The buffer layer 112 may include an insulating material. For example, the buffer layer 112 may include an inorganic insulating material such as silicon oxide, silicon nitride, and silicon nitride. The buffer layer 112 may have a multilayer structure. For example, the buffer layer 112 may have a stacked structure of a first buffer layer and a second buffer layer, wherein the second buffer layer includes a material different from the first buffer layer.

[0058] A driving circuit can be positioned in each sub-pixel. The driving circuit can generate a driving current supplied to the light-emitting element. The driving circuit can be electrically connected to signal lines. For example, signal lines may include a gate line GL for applying a gate signal, a data line DL for applying a data signal, and a power supply line for supplying power voltage. For example, the driving circuit may include a first thin-film transistor 120, a second thin-film transistor 140, and a storage capacitor 130.

[0059] The first thin-film transistor 120 can be electrically connected to the light-emitting element 160. The first thin-film transistor 120 may include a first semiconductor pattern 121, a first gate insulating layer 122, a first gate electrode 123, a first source electrode 124, and a first drain electrode 125. The first semiconductor pattern 121 may be disposed on the buffer layer 112.

[0060] The first semiconductor pattern 121 may include a semiconductor material. For example, the first semiconductor pattern 121 may include a polycrystalline semiconductor material. For example, the first semiconductor pattern 121 may include low-temperature polycrystalline silicon (LTPS).

[0061] A first gate insulating layer 122 may be positioned on a first semiconductor pattern 121. The first gate insulating layer 122 may extend outward from the first semiconductor pattern 121. For example, a side surface of the first semiconductor pattern 121 may be covered by the first gate insulating layer 122. For example, the first gate insulating layer 122 may extend along the upper surface of the buffer layer 112. The first gate insulating layer 122 may include an insulating material. For example, the first gate insulating layer 122 may include inorganic insulating materials such as silicon oxide, silicon nitride, and silicon nitride. The first gate insulating layer 122 may include a material having a high dielectric constant. For example, the first gate insulating layer 122 may include a high-k material such as hafnium oxide.

[0062] The first gate electrode 123 may be positioned on the first gate insulating layer 122. The first gate electrode 123 may include a conductive material. For example, the first gate electrode 123 may include a metallic material such as aluminum (Al), chromium (Cr), copper (Cu), titanium (Ti), molybdenum (Mo), and tungsten (W). The first gate electrode 123 may be electrically insulated from the first semiconductor pattern 121 through the first gate insulating layer 122. The first gate electrode 123 may overlap with the first channel region of the first semiconductor pattern 121.

[0063] The first interlayer insulating layer 114 may be positioned on the first gate electrode 123. The first interlayer insulating layer 114 may extend outward from the first gate electrode 123. For example, the side surface of the first gate electrode 123 may be covered by the first interlayer insulating layer 114. The first interlayer insulating layer 114 may extend along the upper surface of the first gate insulating layer 122. The first interlayer insulating layer 114 may include an insulating material. For example, the first interlayer insulating layer 114 may include an inorganic insulating material such as silicon oxide, silicon nitride, and silicon nitride.

[0064] The first source electrode 124 and the first drain electrode 125 may be disposed on the first interlayer insulating layer 114. The first source electrode 124 and the first drain electrode 125 may comprise conductive materials. For example, the first source electrode 124 and the first drain electrode 125 may comprise metallic materials such as aluminum (Al), chromium (Cr), copper (Cu), titanium (Ti), molybdenum (Mo), and tungsten (W). For example, the first source electrode 124 and the first drain electrode 125 may comprise materials different from those of the first gate electrode 123.

[0065] The first source electrode 124 and the first drain electrode 125 are electrically insulated from the first gate electrode 123 through the first interlayer insulating layer 114. The first source electrode 124 can be electrically connected to the first source region of the first semiconductor pattern 121. For example, the first source electrode 124 can directly contact the first source region of the first semiconductor pattern 121 through a first source contact hole passing through the first gate insulating layer 122 and the first interlayer insulating layer 114. The first drain electrode 125 can be electrically connected to the first drain region of the first semiconductor pattern 121. For example, the first drain electrode 125 can directly contact the first drain region of the first semiconductor pattern 121 through a first drain contact hole passing through the first gate insulating layer 122 and the first interlayer insulating layer 114.

[0066] The storage capacitor 130 may include a first storage electrode 131 and a second storage electrode 132 stacked in sequence. The first storage electrode 131 and the second storage electrode 132 may include a conductive material. For example, the first storage electrode 131 and the second storage electrode 132 may include metallic materials such as aluminum (Al), chromium (Cr), copper (Cu), titanium (Ti), molybdenum (Mo), and tungsten (W).

[0067] For example, the storage capacitor 130 can be formed using the same method as forming the first thin-film transistor 120. For example, the storage capacitor 130 can be positioned adjacent to the first thin-film transistor 120. For example, the first storage electrode 131 can include the same material as the first gate electrode 123. For example, the first storage electrode 131 can be positioned on the same layer as the first gate electrode 123. For example, the first storage electrode 131 can be formed using the same process as the first gate electrode 123. For example, the second storage electrode 132 can include the same material as the first source electrode 124 and the first drain electrode 125. For example, the second storage electrode 132 can be positioned on the same layer as the first source electrode 124 and the first drain electrode 125. For example, the second storage electrode 132 can be formed using the same process as the first source electrode 124 and the first drain electrode 125. For example, a first interlayer insulating layer 114 can extend between the first storage electrode 131 and the second storage electrode 132. The second storage electrode 132 can include a different material than the first storage electrode 131.

[0068] The second thin-film transistor 140 may be electrically connected to the first thin-film transistor 120. For example, the second thin-film transistor 140 may include a second semiconductor pattern 141, a second gate insulating layer 142, a second gate electrode 143, a second source electrode 145, and a second drain electrode 146.

[0069] The second semiconductor pattern 141 may include a semiconductor material. The second semiconductor pattern 141 may include a material different from the first semiconductor pattern 121. For example, the second semiconductor pattern 141 may include an oxide semiconductor such as IGZO. The second semiconductor pattern 141 may be positioned on a layer different from the first semiconductor pattern 121. For example, a separation insulating layer 116 may be positioned on the first thin-film transistor 120, and the second semiconductor pattern 141 may be positioned on the separation insulating layer 116. Therefore, damage to the second semiconductor pattern 141 due to the process of forming the first semiconductor pattern 121 can be prevented. The separation insulating layer 116 may include an insulating material. For example, the separation insulating layer 116 may include inorganic insulating materials such as silicon oxide, silicon nitride, and silicon nitride. For example, the separation insulating layer 116 may have a multilayer structure including silicon oxide and silicon nitride.

[0070] A second gate insulating layer 142 may be disposed on the second semiconductor pattern 141. The second gate insulating layer 142 may overlap with the second channel region of the second semiconductor pattern 141. The second gate insulating layer 142 may expose the second source region and the second drain region of the second semiconductor pattern 141. The second gate insulating layer 142 may include an insulating material. For example, the second gate insulating layer 142 may include inorganic insulating materials such as silicon oxide, silicon nitride, and silicon nitride. The second gate insulating layer 142 may include the same material as the first gate insulating layer 122. For example, the second gate insulating layer 142 may have a multilayer structure.

[0071] The second gate electrode 143 may be disposed on the second gate insulating layer 142. For example, the second gate electrode 143 may overlap with the second channel region of the second semiconductor pattern 141. The second gate electrode 143 may include a conductive material. For example, the second gate electrode 143 may include a metallic material such as aluminum (Al), chromium (Cr), copper (Cu), titanium (Ti), molybdenum (Mo), and tungsten (W). For example, the second gate electrode 143 may include the same material as the first gate electrode 123. The second gate electrode 143 may be insulated from the second semiconductor pattern 141 through the second gate insulating layer 142.

[0072] The second interlayer insulating layer 118 can be positioned on the second gate electrode 143. The second interlayer insulating layer 118 can extend outward from the second gate electrode 143. For example, the side surface of the second gate electrode 143 and the second source region and second drain region of the second semiconductor pattern 141 can be covered by the second interlayer insulating layer 118. The second interlayer insulating layer 118 can extend along the upper surface of the separating insulating layer 116. The second interlayer insulating layer 118 can include an insulating material. For example, the second interlayer insulating layer 118 can include the same material as the first interlayer insulating layer 114. For example, the second interlayer insulating layer 118 can include inorganic insulating materials such as silicon oxide, silicon nitride, and silicon nitride. For example, the second interlayer insulating layer 118 can have a multilayer structure including silicon oxide and silicon nitride.

[0073] The second source electrode 145 and the second drain electrode 146 may be disposed on the second interlayer insulating layer 118. The second source electrode 145 and the second drain electrode 146 may comprise conductive materials. For example, the second source electrode 145 and the second drain electrode 146 may comprise metallic materials such as aluminum (Al), chromium (Cr), copper (Cu), titanium (Ti), molybdenum (Mo), and tungsten (W). For example, the second source electrode 145 and the second drain electrode 146 may comprise the same materials as the first source electrode 124 and the first drain electrode 125. For example, the second source electrode 145 and the second drain electrode 146 may comprise materials different from the second gate electrode 143. For example, the second source electrode 145 and the second drain electrode 146 may have a multilayer structure of titanium (Ti) / aluminum (Al) / titanium (Ti).

[0074] The second source electrode 145 and the second drain electrode 146 are electrically insulated from the second gate electrode 143 through the second interlayer insulating layer 118. The second source electrode 145 can be electrically connected to the second source region of the second semiconductor pattern 141. For example, the second source electrode 145 can directly contact the second source region of the second semiconductor pattern 141 through a second source contact hole passing through the second interlayer insulating layer 118. The second drain electrode 146 can be electrically connected to the second drain region of the second semiconductor pattern 141. For example, the second drain electrode 146 can directly contact the second drain region of the second semiconductor pattern 141 through a second drain contact hole passing through the second interlayer insulating layer 118.

[0075] The second thin-film transistor 140 can be disposed on the storage capacitor 130. For example, the second semiconductor pattern 141 of the second thin-film transistor 140 can overlap with the storage capacitor 130. Light passing through the substrate 110 and traveling toward the second semiconductor pattern 141 can be blocked by the storage capacitor 130. Therefore, changes in the characteristics of the second thin-film transistor 140 due to external light can be prevented. The storage capacitor 130 can be electrically connected to the second drain electrode 146 of the second thin-film transistor 140. For example, the second drain electrode 146 can be in direct contact with the first storage electrode 131 through a storage contact hole passing through the first interlayer insulating layer 114, the separation insulating layer 116, and the second interlayer insulating layer 118.

[0076] Intermediate source electrode 148 and intermediate drain electrode 149 can be positioned on the second interlayer insulating layer 118. Intermediate source electrode 148 and intermediate drain electrode 149 can comprise conductive materials. For example, intermediate source electrode 148 and intermediate drain electrode 149 can comprise metallic materials such as aluminum (Al), chromium (Cr), copper (Cu), titanium (Ti), molybdenum (Mo), and tungsten (W). Intermediate source electrode 148 and intermediate drain electrode 149 can comprise the same materials as the second source electrode 145 and the second drain electrode 146. For example, the second source electrode 145, the second drain electrode 146, the intermediate source electrode 148, and the intermediate drain electrode 149 can be formed simultaneously. For example, the second source electrode 145, the second drain electrode 146, the intermediate source electrode 148, and the intermediate drain electrode 149 can have a multilayer structure of titanium (Ti) / aluminum (Al) / titanium (Ti).

[0077] The intermediate source electrode 148 can be electrically connected to the first source electrode 124 of the first thin-film transistor 120. For example, the intermediate source electrode 148 can directly contact the first source electrode 124 of the first thin-film transistor 120 through a first intermediate contact hole passing through the separating insulating layer 116 and the second interlayer insulating layer 118. The intermediate drain electrode 149 can be electrically connected to the first drain electrode 125 of the first thin-film transistor 120. For example, the intermediate drain electrode 149 can directly contact the first drain electrode 125 of the first thin-film transistor 120 through a second intermediate contact hole passing through the separating insulating layer 116 and the second interlayer insulating layer 118.

[0078] The light-emitting element 160 can be disposed on the driving circuit. For example, the first thin-film transistor 120, the second thin-film transistor 140 and the storage capacitor 130 of each sub-pixel can be positioned between the substrate 110 and the light-emitting element 160.

[0079] The first planarization layer 150 and the second planarization layer 154 may be sequentially stacked between the driving circuit and the light-emitting element 160. The first planarization layer 150 and the second planarization layer 154 may cover the steps caused by the driving circuit to provide a flat surface. For example, the first planarization layer 150 and the second planarization layer 154 may include an organic insulating material.

[0080] An intermediate contact electrode 152 may be disposed on the first planarization layer 150. A light-emitting element 160 may be disposed on the second planarization layer 154. The light-emitting element 160 may include a first electrode 161, a light-emitting layer 165, and a second electrode 167. The light-emitting element 160 may be electrically connected to an intermediate drain electrode 149 via the intermediate contact electrode 152, and then electrically connected to the first drain electrode 125 of the first thin-film transistor 120. For example, the intermediate contact electrode 152 may be connected to the intermediate drain electrode 149 through the first planarization layer 150, and the first electrode 161 of the light-emitting element 160 may be connected to the intermediate contact electrode 152 through the second planarization layer 154. The intermediate contact electrode 152 may include a conductive material. For example, the intermediate contact electrode 152 may include metallic materials such as aluminum (Al), chromium (Cr), copper (Cu), titanium (Ti), molybdenum (Mo), and tungsten (W). For example, the intermediate contact electrode 152 may have a multilayer structure of titanium (Ti) / aluminum (Al) / titanium (Ti).

[0081] A dam layer 156 may be disposed on the second planarization layer 154. The dam layer 156 may include an organic insulating material. For example, the dam layer 156 may be formed of a photosensitive acrylic or polyimide organic material. The dam layer 156 may cover the edge of the first electrode 161. The dam layer 156 may have an opening that exposes a portion of the first electrode 161. The light-emitting layer 165 of the light-emitting element 160 and the second electrode 167 may be stacked on the portion of the first electrode 161 exposed through the dam layer 156. The light-emitting area may be defined by the portion of the first electrode 161 exposed through the opening of the dam layer 156. The first electrode 161 may include a conductive material. The first electrode 161 may have high reflectivity. For example, the first electrode 161 may include a metallic material such as aluminum (Al) or silver (Ag). The first electrode 161 may have a multilayer structure. For example, the first electrode 161 may have a structure in which a metal such as aluminum (Al) or silver (Ag) is disposed between transparent conductive materials such as ITO and IZO.

[0082] The light-emitting layer 165 may extend onto the embankment layer 156. The light-emitting layer 165 may include a light-emitting material layer 163. For example, the light-emitting material layer 163 may include a light-emitting material formed of an organic material. The light-emitting layer 165 may have a multilayer structure. For example, the light-emitting layer 165 may include at least one of a first light-emitting common layer 162 positioned between the first electrode 161 and the light-emitting material layer 163 and a second light-emitting common layer 164 positioned between the light-emitting material layer 163 and the second electrode 167. For example, the first light-emitting common layer 162 may include at least one of a hole injection layer (HIL) and a hole transport layer (HTL). The second light-emitting common layer 164 may include at least one of an electron transport layer (ETL) and an electron injection layer (EIL).

[0083] For example, when subpixels of each pixel emit light of a different color, the luminescent material layer 163 of each subpixel can be separated from the luminescent material layers 163 of adjacent subpixels. The luminescent material layer 163 of each subpixel can be formed individually using a fine metal mask (FMM). The end portions of the luminescent material layer 163 can be positioned on the embankment layer 156.

[0084] For example, spacer 158 can be disposed on the dam layer 156. Spacer 158 can prevent damage to the dam layer 156 and the light-emitting material layer 163 first formed on adjacent sub-pixels by a fine metal mask. For example, spacer 158 can be formed of photosensitive acrylic or polyimide organic materials. Dam layer 156 and spacer 158 can be formed simultaneously by a single photolithography process, but are not limited thereto. Dam layer 156 and spacer 158 can also be formed by separate processes.

[0085] The first common light-emitting layer 162 and the second common light-emitting layer 164 of the light-emitting layer 165 can extend along the surface of the embankment layer 156. The first common light-emitting layer 162 and the second common light-emitting layer 164 of the light-emitting layer 165 can cover the upper surface and side surface of the spacing portion 158. For example, the first common light-emitting layer 162 and the second common light-emitting layer 164 can be jointly disposed in adjacent sub-pixels. For example, each of the first common light-emitting layer 162 and the second common light-emitting layer 164 can be jointly disposed in all pixels of the display area AA.

[0086] The second electrode 167 can be disposed together in adjacent sub-pixels. For example, the second electrode 167 can be disposed together in all pixels of the display area AA. The second electrode 167 may include a conductive material. For example, the second electrode 167 may be a transparent electrode formed of a transparent conductive material such as ITO and IZO.

[0087] An encapsulation portion 170 can be positioned on the light-emitting element 160. The encapsulation portion 170 can prevent damage to the light-emitting element 160 caused by external impacts and moisture. The encapsulation portion 170 can have a multi-layer structure. For example, the encapsulation portion 170 may include a first encapsulation layer 172, a second encapsulation layer 174, and a third encapsulation layer 176 stacked sequentially. For example, the first encapsulation layer 172 and the third encapsulation layer 176 may include inorganic insulating materials, while the second encapsulation layer 174 may include organic insulating materials.

[0088] The encapsulation portion 170 can extend outward from the display area AA. At least one encapsulation dam can be provided in the non-display area NAA. For example, the encapsulation dam can include at least one organic insulating material. For example, the encapsulation dam can be positioned on the first planarization layer 150. For example, the encapsulation dam can include the same material as the second planarization layer 154. The encapsulation dam can have a closed-loop shape surrounding the display area AA of the substrate 110. Since the movement of the movable second encapsulation layer 174 can be blocked by the encapsulation dam, the second encapsulation layer 174 can be positioned only on the portion of the substrate 110 defined by the encapsulation dam. The third encapsulation layer 176 can be in direct contact with the first encapsulation layer 172 outside the second encapsulation layer 174.

[0089] A touch sensor layer 187 may be disposed on the package portion 170. The touch sensor layer 187 may include a first touch electrode 183, a first bridge electrode 184, a second touch electrode 185, and a second bridge electrode 186.

[0090] A touch buffer layer 181 may be provided between the package 170 and the touch sensor layer 187. The touch buffer layer 181 can prevent damage to the package 170 and the light-emitting element 160 due to the processes used to form the first bridge electrode 184, the first touch electrode 183, the second touch electrode 185, and the second bridge electrode 186. For example, the upper surface of the package 170 may be covered by the touch buffer layer 181. For example, the touch buffer layer 181 may extend to the non-display area NAA. The touch buffer layer 181 may include an insulating material. For example, the touch buffer layer 181 may include inorganic insulating materials such as silicon oxide, silicon nitride, and silicon nitride.

[0091] A first bridge electrode 184 may be disposed on the touch buffer layer 181. A touch insulating layer 182 may be disposed on the first bridge electrode 184. The touch insulating layer 182 may extend along the upper surface of the touch buffer layer 181. For example, the touch insulating layer 182 may extend to a non-display area. For example, the touch insulating layer 182 may comprise an inorganic insulating material such as silicon oxide, silicon nitride, and silicon nitride.

[0092] A first touch electrode 183 and a second touch electrode 185 can be disposed on the touch insulating layer 182. A first bridge electrode 184 can be electrically connected to an adjacent first touch electrode 183. The first touch electrode 183 can be connected to the first bridge electrode 184 through a touch contact hole passing through the touch insulating layer 182. A second bridge electrode 186 can be disposed on the touch insulating layer 182 and integrally formed with the second touch electrode 185.

[0093] The first touch electrode 183, the second touch electrode 185, the first bridge electrode 184, and the second bridge electrode 186 may comprise conductive materials. For example, the first touch electrode 183, the second touch electrode 185, the first bridge electrode 184, and the second bridge electrode 186 may comprise metallic materials such as aluminum (Al), chromium (Cr), copper (Cu), titanium (Ti), molybdenum (Mo), and tungsten (W). For example, the first touch electrode 183, the second touch electrode 185, the first bridge electrode 184, and the second bridge electrode 186 may have a multilayer structure of titanium (Ti) / aluminum (Al) / titanium (Ti). For example, the first touch electrode 183, the second touch electrode 185, the first bridge electrode 184, and the second bridge electrode 186 may overlap with the embankment layer 156. Light emitted from each light-emitting element 160 may not be blocked by the first touch electrode 183, the second touch electrode 185, the first bridge electrode 184, and the second bridge electrode 186.

[0094] A touch protection layer 190 can be provided on the touch sensor layer 187. The touch protection layer 190 can prevent damage to the touch sensor layer 187 due to external impacts and moisture. The touch protection layer 190 may include an insulating material. For example, the touch protection layer 190 may include an organic insulating material. For example, the touch protection layer 190 may be formed of a photosensitive acrylic-based or polyimide-based organic material. The touch protection layer 190 may extend into the non-display area NAA.

[0095] A cover layer 195 may be provided on the touch protective layer 190. For example, the cover layer 195 may include an organic insulating material. For example, the cover layer 195 may be formed of an acrylic, polyimide, epoxy, or silane resin. The touch protective layer 190 may extend into the non-display area NAA. The cover layer 195 may extend into the non-display area NAA.

[0096] Figure 3 yes Figure 1 An enlarged view of region III in the image. Figure 4 It is along Figure 3 A cross-sectional view of the display device with line IV-IV in the middle. Figure 3 This is a plan view showing a portion of the non-display area NAA of the display panel 100. Figure 3 The diagram shows a structure in which the touch wiring TRL of the link area LA is connected to the pad area PA via the connecting line CNL.

[0097] Reference Figure 3Multiple connector lines (CNLs) connected one-to-one to multiple touch traces (TRLs) can pass through the bend area (BA) and extend from the link area (LA) to the pad area (PA). A metal mesh pattern (MGP1) overlapping with the multiple connector lines (CNLs) can be set in the bend area (BA). The metal mesh pattern (MGP1) can be set on a different layer than the multiple connector lines (CNLs). The metal mesh pattern (MGP1) can be set on the multiple connector lines (CNLs). For example... Figure 3 As shown, the metal mesh pattern MGP1 according to this embodiment can be a metal mesh pattern having rhomboid openings in a plan view. The vertices of each rhombus can be arranged adjacent to each other in the first direction DR1 and the second direction DR2. The mesh lines of the metal mesh pattern MGP1 can extend in a direction inclined relative to the first direction DR1 or the second direction DR2.

[0098] The metal mesh pattern MGP1 can be configured not to overlap with the connection line CNL connected to the touch wiring TRL locally, but rather to overlap with the cross-line. Figure 1 Multiple connecting lines CNL and CNL' overlap throughout the entire curved area BA extending in the first direction DR1. Therefore, the metal mesh pattern MGP1 can also be configured to overlap with the connecting line CNL' connected to the data line DL (see...). Figure 1 ).

[0099] Reference Figure 4 The buffer layer 112, the first gate insulating layer 122, the first interlayer insulating layer 114, the separation insulating layer 116, and the second interlayer insulating layer 118 can be disposed in the link region LA and the pad region PA of the substrate 110. A second gate insulating layer 142 can also be disposed between the separation insulating layer 116 and the second interlayer insulating layer 118 in the link region LA of the substrate 110.

[0100] However, the buffer layer 112, the first gate insulating layer 122, the first interlayer insulating layer 114, the separation insulating layer 116, and the second interlayer insulating layer 118, formed of an inorganic insulating material susceptible to cracking, may not be disposed in the bending region BA of the substrate 110. The buffer layer 112, the first gate insulating layer 122, the first interlayer insulating layer 114, the separation insulating layer 116, and the second interlayer insulating layer 118 may expose the bending region BA of the substrate 110. The end portions of the buffer layer 112, the first gate insulating layer 122, the first interlayer insulating layer 114, the separation insulating layer 116, and the second interlayer insulating layer 118 extending from the display region AA may be disposed within the link region LA.

[0101] The first signal line 133, the second signal line 134, and the third signal line 144 can be disposed in the link region LA of the substrate 110. The first signal line 133 can be disposed between the first gate insulating layer 122 and the first interlayer insulating layer 114. The first signal line 133 can be formed of the same material as the first gate electrode 123 and formed using the same process as the first gate electrode 123. The second signal line 134 can be disposed between the first interlayer insulating layer 114 and the separating insulating layer 116. The second signal line 134 can be formed of the same material as the first source electrode 124 and the first drain electrode 125 and formed using the same process as the first source electrode 124 and the first drain electrode 125. The third signal line 144 can be disposed between the separating insulating layer 116 and the second interlayer insulating layer 118. The third signal line 144 can be formed of the same material as the second gate electrode 143 and formed using the same process as the second gate electrode 143. A second gate insulating layer 142 can also be disposed between the third signal line 144 and the separating insulating layer 116.

[0102] Furthermore, an intermediate line 147 may be provided on the second interlayer insulating layer 118 in the link region LA of the substrate 110. The intermediate line 147 may be formed of the same material as the second source electrode 145 and the second drain electrode 146, and formed by the same process as the second source electrode 145 and the second drain electrode 146.

[0103] A first planarization layer 150 covering the center line 147 can be provided on the second interlayer insulating layer 118. The first planarization layer 150 extending from the display area AA can be continuously provided in the link area LA, the bending area BA, and the pad area PA of the substrate 110. The first planarization layer 150 can be directly provided in the bending area BA of the substrate 110.

[0104] The interconnect line CNL can be disposed on the first planarization layer 150, and can be disposed in the link region LA, the bending region BA, and the pad region PA of the substrate 110. The interconnect line CNL can be formed of the same material as the intermediate contact electrode 152, and formed by the same process as the intermediate contact electrode 152.

[0105] A second planarization layer 154 covering the interconnect lines CNL can be provided on the first planarization layer 150. The second planarization layer 154 extending from the display area AA can be continuously provided in the link area LA, the bending area BA, and the pad area PA of the substrate 110. The second planarization layer 154 can prevent damage to the interconnect lines CNL due to external impact and moisture.

[0106] A dam layer 156, a touch buffer layer 181, and a touch insulating layer 182 can be disposed on a second planarization layer 154 in the link area LA of the non-display area NAA. The touch buffer layer 181 and the touch insulating layer 182 can extend outward from the dam layer 156. The touch buffer layer 181 and the touch insulating layer 182 can cover the side surface of the dam layer 156. A stress relief layer 156P can be disposed in the link area LA, the bending area BA, and the pad area PA of the non-display area NAA. The stress relief layer 156P can be formed of the same material as the dam layer 156 and formed using the same process as the dam layer 156. The stress relief layer 156P can be configured to be spaced apart from the dam layer 156.

[0107] Touch wiring TRLs can be provided in the link area LA of the non-display area NAA. The touch wiring TRLs can be disposed on the touch insulating layer 182. The touch wiring TRLs can be connected to the connecting line CNL through contact holes passing through the second planarization layer 154, the touch buffer layer 181, and the touch insulating layer 182. The touch wiring TRLs can be formed of the same material as the first touch electrode 183 and the second touch electrode 185, and formed using the same process as the first touch electrode 183 and the second touch electrode 185. Auxiliary touch wiring TRLSs can be provided in the link area LA of the non-display area NAA. The auxiliary touch wiring TRLSs can be disposed on the touch buffer layer 181. The auxiliary touch wiring TRLSs can be disposed between the touch buffer layer 181 and the touch insulating layer 182. The auxiliary touch wiring TRLSs can be formed of the same material as the first bridge electrode 184, and formed using the same process as the first bridge electrode 184. The auxiliary touch wiring TRLSs can be electrically connected to the touch wiring TRLs.

[0108] The touch protection layer 190 may cover the touch wiring TRL. The end portions of the touch protection layer 190 may contact the end portions of the stress relief layer 156P. Multiple partitions 190D may be provided on a portion of the stress relief layer 156P. The multiple partitions 190D may be provided in the link region LA, but are not limited thereto. Some of the multiple partitions 190D may be provided in the bending region BA. The multiple partitions 190D may act as dams to prevent organic material forming the capping layer 195 from flowing to the outside of the display panel 100 during the process of forming the capping layer 195 provided on the touch protection layer 190. The partitions 190D may have a closed-loop shape surrounding the display region AA of the substrate 110. The multiple partitions 190D may be formed from the same material as the touch protection layer 190 and formed by the same process as the touch protection layer 190.

[0109] The cover layer 195 can be disposed in the link area LA of the non-display area NAA. The cover layer 195 can be in direct contact with the upper and side surfaces of the touch protection layer 190. The cover layer 195 can cover one of a plurality of partitions 190D.

[0110] A metal mesh pattern MGP1 and a mesh protective layer MGPL can be provided in the curved area BA of the non-display area NAA. The metal mesh pattern MGP1 can be provided on the connecting line CNL. The metal mesh pattern MGP1 can be embedded in the upper part of the stress relief layer 156P in a recessed shape. The metal mesh pattern MGP1 can be provided in a groove provided in the upper surface of the stress relief layer 156P. The metal mesh pattern MGP1 can be formed of the same material as the first touch electrode 183 and the second touch electrode 185, and formed by the same process as the first touch electrode 183 and the second touch electrode 185. The metal mesh pattern MGP1 can be formed of the same material as the touch wiring TRL, and formed by the same process as the touch wiring TRL. The mesh protective layer MGPL can cover the metal mesh pattern MGP1 and is provided on the upper surface of the stress relief layer 156P. The mesh protective layer MGPL can protect the metal mesh pattern MGP1 from external impacts or moisture. The mesh protective layer MGPL can be formed from the same material as the touch protective layer 190 and through the same process as the touch protective layer 190.

[0111] A display device according to one embodiment of this specification may include a metal mesh pattern MGP1 embedded in a stress relief layer 156P disposed on a connecting line CNL within a bent region BA, thereby effectively dispersing the tensile stress applied to the stress relief layer 156P when the bent region of the display device is bent. Therefore, cracks can be prevented from forming in the stress relief layer 156P when the bent region of the display device is bent, and cracks in the stress relief layer 156P can be prevented from propagating and causing cracks in the connecting line CNL.

[0112] Furthermore, in a display device according to one embodiment of this specification, the tensile stress applied to the stress relief layer 156P when the curved area of ​​the display device is bent can be dispersed, thereby further reducing the curvature of the curved area BA. Therefore, the lower bezel area of ​​the display device according to this embodiment can be further reduced.

[0113] Furthermore, in a display device according to one embodiment of this specification, since the tensile stress applied to the organic material layer when the curved area of ​​the display device is bent can be dispersed, the resin layer previously additionally coated on the curved area to reduce tensile stress by adjusting the position of the neutral surface of the curved area can be omitted.

[0114] Figures 5A to 5C This is a cross-sectional view illustrating a method for manufacturing a metal mesh pattern according to one embodiment of this specification. For ease of description, Figures 5A to 5C Only the curved area BA of the non-display area NAA is shown.

[0115] Reference Figure 5A The first planarization layer 150, the interconnect line CNL, the second planarization layer 154, and the stress relief layer 156P can be stacked in the curved region BA of the substrate 110. A groove 156R in which a metal mesh pattern is disposed can be formed in the stress relief layer 156P. For example, the stress relief layer 156P can be formed using the same process as the dam layer 156. For example, when forming the opening of the dam layer 156, the groove 156R of the stress relief layer 156P can be formed together. Since the dam layer 156 and the stress relief layer 156P are formed of photosensitive acrylic or polyimide organic materials, the opening of the dam layer 156 and the groove 156R of the stress relief layer 156P can be formed simultaneously using a single photolithography process using a halftone mask.

[0116] Reference Figure 5B A metal mesh pattern MGP1 can be formed in the groove 156R of the stress relief layer 156P. The metal mesh pattern MGP1 can be formed using the same process as the first touch electrode 183 and the second touch electrode 185 or the touch wiring TRL. During the etching process used to pattern the first touch electrode 183 and the second touch electrode 185 or the touch wiring TRL, the metal material formed in the area of ​​the stress relief layer 156P other than the groove 156R can be removed, so that the metal mesh pattern MGP1 can be embedded in the groove 156R of the stress relief layer 156P.

[0117] Reference Figure 5C A mesh protective layer MGPL, covering a metallic mesh pattern MGP1, can be formed on the stress relief layer 156P. The mesh protective layer MGPL can be formed using the same process as the touch protective layer 190. Since the touch protective layer 190 and the mesh protective layer MGPL are formed from photosensitive acrylic or polyimide organic materials, they can be formed simultaneously using a single photolithography process.

[0118] According to one embodiment of the manufacturing method described in this specification, since the metal mesh pattern and the mesh protective layer can be formed by some modifications to conventional processes, the metal mesh pattern and the mesh protective layer can be easily formed in curved areas without adding manufacturing processes and masks.

[0119] Figure 6 This is a plan view showing the curved region of a display device according to one embodiment of this specification. Figure 7 It is along Figure 6 A cross-sectional view of the display device along line VII-VII.

[0120] Reference Figure 6 A metal mesh pattern MGP2 and a mesh protection pattern MGPP can be set in the curved region BA, overlapping with multiple connecting lines CNL. The metal mesh pattern MGP2 can be set on a different layer than the multiple connecting lines CNL. The metal mesh pattern MGP2 can be set on the multiple connecting lines CNL. The mesh protection pattern MGPP can be set on the metal mesh pattern MGP2.

[0121] like Figure 6 As shown, the metal mesh pattern MGP2 according to this embodiment can be a metal mesh pattern with diamond-shaped openings in a plan view. The vertices of each diamond can be arranged adjacent to each other in the first direction DR1 and the second direction DR2. The mesh lines of the metal mesh pattern MGP2 can extend in a direction inclined relative to the first direction DR1 or the second direction DR2. Similar to the metal mesh pattern MGP2, the mesh protection pattern MGPP can be a mesh pattern with diamond-shaped openings. The width of the mesh lines of the mesh protection pattern MGPP can be greater than the width of the mesh lines of the metal mesh pattern MGP2.

[0122] The metal mesh pattern MGP2 can be configured not to overlap with the connection line CNL connected to the touch wiring TRL locally, but rather to overlap with the cross-line. Figure 1 Multiple connecting lines CNL and CNL' overlap throughout the entire curved area BA extending in the first direction DR1. Therefore, the metal mesh pattern MGP2 can also be configured to overlap with the connecting line CNL' connected to the data line DL.

[0123] Reference Figure 7A metal mesh pattern MGP2, a mesh protection pattern MGPP, and a mesh protection layer MGPL can be set in the curved area BA of the non-display area NAA. The metal mesh pattern MGP2 can be set on the connecting line CNL. The metal mesh pattern MGP2 can be embedded in the upper part of the stress relief layer 156P in a recessed shape. The metal mesh pattern MGP2 can be set in a groove provided in the upper surface of the stress relief layer 156P. The metal mesh pattern MGP2 can be formed of the same material as the first bridge electrode 184 and formed by the same process as the first bridge electrode 184. The metal mesh pattern MGP2 can be formed of the same material as the auxiliary touch wiring TRLS and formed by the same process as the auxiliary touch wiring TRLS. The mesh protection pattern MGPP can completely cover the metal mesh pattern MGP2. The mesh lines of the mesh protection pattern MGPP can completely cover the upper surface of the mesh lines of the metal mesh pattern MGP2. The mesh protection pattern MGPP can protect the metal mesh pattern MGP2 from external moisture. The mesh protective pattern MGPP can be formed from the same material as the touch insulating layer 182 and through the same process as the touch insulating layer 182. The mesh protective layer MGPL can cover the mesh protective pattern MGPP and can be disposed on the upper surface of the stress-relief layer 156P. The mesh protective layer MGPL can protect the metal mesh pattern MGP2 from external impacts or moisture. The mesh protective layer MGPL can be formed from the same material as the touch protective layer 190 and through the same process as the touch protective layer 190. Figure 7 Implementation methods and Figure 4 The difference in the implementation method is that some configurations set in the curved area BA of the non-display area NAA are different, while other configurations are the same.

[0124] A display device according to one embodiment of this specification may include a metal mesh pattern MGP2 embedded in a stress relief layer 156P disposed on a connecting line CNL within a bent region BA, thereby effectively dispersing the tensile stress applied to the stress relief layer 156P when the bent region of the display device is bent. Therefore, cracks can be prevented from forming in the stress relief layer 156P when the bent region of the display device is bent, and cracks in the stress relief layer 156P can be prevented from propagating and causing cracks in the connecting line CNL.

[0125] Furthermore, in a display device according to one embodiment of this specification, the tensile stress applied to the stress relief layer 156P when the curved area of ​​the display device is bent can be dispersed, thereby further reducing the curvature of the curved area BA. Therefore, the lower bezel area of ​​the display device according to this embodiment can be further reduced.

[0126] Furthermore, in a display device according to one embodiment of this specification, since the tensile stress applied to the organic material layer when the curved area of ​​the display device is bent can be dispersed, the resin layer previously additionally coated on the curved area to reduce tensile stress by adjusting the position of the neutral surface of the curved area can be omitted.

[0127] Figures 8A to 8C This is a cross-sectional view illustrating a method for manufacturing a metal mesh pattern according to one embodiment of this specification. For ease of description, Figures 8A to 8C Only the curved area BA of the non-display area NAA is shown.

[0128] Reference Figure 8A The first planarization layer 150, the interconnect line CNL, the second planarization layer 154, and the stress relief layer 156P can be stacked in the curved region BA of the substrate 110. A groove 156R in which a metal mesh pattern is disposed can be formed in the stress relief layer 156P. For example, the stress relief layer 156P can be formed using the same process as the dam layer 156. For example, when forming the opening of the dam layer 156, the groove 156R of the stress relief layer 156P can be formed together. Since the dam layer 156 and the stress relief layer 156P are formed of photosensitive acrylic or polyimide organic materials, the opening of the dam layer 156 and the groove 156R of the stress relief layer 156P can be formed simultaneously using a single photolithography process using a halftone mask.

[0129] Reference Figure 8B A metal mesh pattern MGP2 can be formed in the groove 156R of the stress relief layer 156P. The metal mesh pattern MGP2 can be formed using the same process as the first bridge electrode 184 or the auxiliary touch wiring TRLS. During the etching process used to pattern the first bridge electrode 184 or the auxiliary touch wiring TRLS, the metal material formed in the area of ​​the stress relief layer 156P other than the groove 156R can be removed, so that the metal mesh pattern MGP2 can be embedded in the groove 156R of the stress relief layer 156P.

[0130] Reference Figure 8CA mesh protection pattern MGPP and a mesh protection layer MGPL, covering the metal mesh pattern MGP2, can be formed on the stress relief layer 156P. The mesh protection pattern MGPP can be formed using the same process as the touch insulating layer 182. The mesh protection pattern MGPP can have a shape similar to the metal mesh pattern MGP2 and completely cover the metal mesh pattern MGP2. The mesh lines of the mesh protection pattern MGPP can completely cover the upper surface of the mesh lines of the metal mesh pattern MGP2. The width W2 of the mesh lines of the mesh protection pattern MGPP can be greater than the width W1 of the mesh lines of the metal mesh pattern MGP2. The mesh protection layer MGPL can be formed using the same process as the touch protective layer 190. Since the touch protective layer 190 and the mesh protection layer MGPL are formed from photosensitive acrylic or polyimide organic materials, the touch protective layer 190 and the mesh protection layer MGPL can be formed simultaneously using a single photolithography process.

[0131] According to one embodiment of the manufacturing method described in this specification, since the metal mesh pattern, the mesh protection pattern, and the mesh protection layer can be formed by some modifications to conventional processes, the metal mesh pattern, the mesh protection pattern, and the mesh protection layer can be easily formed in curved areas without adding manufacturing processes and masks.

[0132] This concludes the description of the display device including metal mesh patterns MGP1 and MGP2 with diamond-shaped openings. However, the embodiments described herein are not limited thereto.

[0133] Figure 9 This is a plan view showing a metal mesh pattern of a display device according to one embodiment of this specification.

[0134] Reference Figure 9 The metal mesh patterns MGP1-1 and MGP2-1 disposed in the curved region BA of the substrate 110 can be metal mesh patterns with quadrilateral openings. The quadrilateral openings can form rows and columns in the first direction DR1 and the second direction DR2. The mesh lines of the metal mesh patterns MGP1-1 and MGP2-1 can extend in the first direction DR1 and the second direction DR2. Metal mesh pattern MGP1-1 corresponds to a modified example of metal mesh pattern MGP1, and metal mesh pattern MGP2-1 corresponds to a modified example of metal mesh pattern MGP2. As another modified example, a metal mesh pattern in which the quadrilateral openings are arranged in a zigzag pattern in the first direction DR1 or the second direction DR2 can also be applied to the curved region BA of the display panel 100.

[0135] Figure 10 This is a plan view showing a metal mesh pattern of a display device according to one embodiment of this specification.

[0136] Reference Figure 10 The metal mesh patterns MGP1-2 and MGP2-2 disposed in the curved region BA of the substrate 110 can be metal mesh patterns in which hexagonal openings are arranged in a honeycomb shape. Metal mesh pattern MGP1-2 corresponds to a modified example of metal mesh pattern MGP1, and metal mesh pattern MGP2-2 corresponds to a modified example of metal mesh pattern MGP2.

[0137] The display device according to various embodiments of this specification can be described as follows.

[0138] According to embodiments of this specification, a display device is provided, comprising: a substrate including a display area and a curved area; a connecting line passing through the curved area of ​​the substrate; a planarization layer covering the connecting line in the curved area; a stress relief layer disposed on the planarization layer in the curved area; and a metal mesh pattern disposed on the connecting line in the curved area, wherein a groove is provided in the upper surface of the stress relief layer, and the metal mesh pattern is configured to correspond to the groove.

[0139] According to some embodiments of this specification, the metal mesh pattern can be integrally formed over the entire curved area.

[0140] According to some embodiments of this specification, the metal mesh pattern may have diamond-shaped openings.

[0141] According to some embodiments of this specification, the metal mesh pattern may have quadrilateral openings.

[0142] According to some embodiments of this specification, the metal mesh pattern may have hexagonal openings arranged in a honeycomb shape.

[0143] According to some embodiments of this specification, the stress relief layer may include the same material as the embankment disposed in the display area.

[0144] According to some embodiments of this specification, the metal mesh pattern may include the same material as the touch electrodes disposed in the display area.

[0145] According to some embodiments of this specification, the display device may also include a mesh protective layer disposed on the stress relief layer in the bending region and covering a metal mesh pattern.

[0146] According to some embodiments of this specification, the mesh protective layer may include the same material as the touch protective layer disposed in the display area.

[0147] According to some embodiments of this specification, the metal mesh pattern may include the same material as the first bridge electrode disposed in the display area.

[0148] According to some embodiments of this specification, the display device may also include a mesh protection pattern that overlaps with the metal mesh pattern in the curved area.

[0149] According to some embodiments of this specification, the width of the grid lines of the mesh protection pattern can be greater than the width of the grid lines of the metal mesh pattern.

[0150] According to some embodiments of this specification, the mesh protection pattern may include the same material as the touch insulating layer disposed in the display area.

[0151] According to some embodiments of this specification, the display device may also include a mesh protective layer disposed on the stress relief layer in the bending region and covering the mesh protective pattern.

[0152] According to some embodiments of this specification, the mesh protective layer may include the same material as the touch protective layer disposed in the display area.

[0153] According to embodiments of this specification, a display device is provided, comprising: a substrate including a display area and a curved area; a first organic material layer disposed in the curved area of ​​the substrate; a connecting line passing through the curved area of ​​the substrate and disposed on the first organic material layer; a second organic material layer covering the connecting line in the curved area; a third organic material layer disposed on the second organic material layer in the curved area; and a metal mesh pattern disposed on the connecting line in the curved area, wherein a groove is provided in the upper surface of the third organic material layer, and the metal mesh pattern is configured to correspond to the groove.

[0154] According to some embodiments of this specification, the metal mesh pattern may have diamond-shaped openings. According to some embodiments of this specification, the metal mesh pattern may have quadrilateral or hexagonal openings.

[0155] According to some embodiments of this specification, the metal mesh pattern may include the same material as the touch electrode or the first bridge electrode disposed in the display area.

[0156] According to some embodiments of this specification, the display device may also include an organic protective layer disposed in the curved region on a third organic material layer and covered with a metal mesh pattern.

[0157] According to some embodiments of this specification, the display device may further include an inorganic protective pattern disposed in the curved region between and overlapping the organic protective layer and the metal mesh pattern.

[0158] Although embodiments of this specification have been described in more detail with reference to the accompanying drawings, this specification is not limited to these embodiments, and various modifications can be made without departing from the technical spirit of this specification. Therefore, the embodiments disclosed in this specification are not intended to limit the technical spirit of this specification, but rather to describe it, and the scope of the technical spirit of this specification is not limited by these embodiments. Thus, it should be understood that the above embodiments are illustrative rather than restrictive in all respects.

Claims

1. A display device, comprising: A substrate, comprising a display area and a curved area; A connecting line that passes through the curved region of the substrate; A planarization layer that covers the connecting line in the curved region; A stress-relief layer is disposed on the planarization layer in the bending region; as well as A metal mesh pattern is disposed on the connecting line in the curved region. The stress relief layer has a groove on its upper surface, and the metal mesh pattern is configured to correspond to the groove.

2. The display device according to claim 1, wherein, The metal mesh pattern is integrally formed over the entire curved area.

3. The display device according to claim 1, wherein, The metal mesh pattern has diamond-shaped openings.

4. The display device according to claim 1, wherein, The metal mesh pattern has quadrilateral openings or hexagonal openings arranged in a honeycomb shape.

5. The display device according to claim 1, wherein, The stress relief layer comprises the same material as the embankment layer disposed in the display area.

6. The display device according to claim 1, wherein, The metal mesh pattern comprises the same material as the touch electrodes disposed in the display area.

7. The display device according to claim 1, further comprising a mesh protective layer disposed on the stress relief layer in the bending region and covering the metal mesh pattern.

8. The display device according to claim 7, wherein, The mesh protective layer comprises the same material as the touch protective layer disposed in the display area.

9. The display device according to claim 1, wherein, The metal mesh pattern comprises the same material as the first bridge electrode disposed in the display area.

10. The display device according to claim 1, further comprising a mesh protection pattern overlapping the metal mesh pattern in the curved region.

11. The display device according to claim 10, wherein, The width of the grid lines in the protective grid pattern is greater than the width of the grid lines in the metal grid pattern.

12. The display device according to claim 10, wherein, The mesh protective pattern comprises the same material as the touch insulating layer disposed in the display area.

13. The display device according to claim 10, further comprising a mesh protective layer disposed on the stress relief layer in the bending region and covering the mesh protective pattern.

14. The display device according to claim 13, wherein, The mesh protective layer comprises the same material as the touch protective layer disposed in the display area.

15. A display device, comprising: A substrate, comprising a display area and a curved area; A first organic material layer is disposed in the curved region of the substrate; A connecting line that passes through the curved region of the substrate and is disposed on the first organic material layer; A second organic material layer covers the connecting line in the curved region; A third organic material layer is disposed on the second organic material layer in the curved region; as well as A metal mesh pattern is disposed on the connecting line in the curved region. The third organic material layer has a groove on its upper surface, and the metal mesh pattern is configured to correspond to the groove.

16. The display device according to claim 15, wherein, The metal mesh pattern has diamond-shaped openings.

17. The display device according to claim 15, wherein, The metal mesh pattern has quadrilateral or hexagonal openings.

18. The display device according to claim 15, wherein, The metal mesh pattern comprises the same material as the touch electrodes or first bridge electrodes disposed in the display area.

19. The display device according to claim 15, further comprising an organic protective layer disposed on the third organic material layer in the curved region and covering the metal mesh pattern.

20. The display device of claim 19, further comprising an inorganic protective pattern disposed in the curved region between the organic protective layer and the metal mesh pattern and overlapping the metal mesh pattern.

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