Ultra-wideband infrared emitter

Abstract

A lighting device, system, and method of manufacturing the device are described. The device includes a light emitting diode (LED) structure having an LED that emits blue light. A phosphor layer of the LED structure partially absorbs a portion of the blue light and emits near infrared light. A plate separate from the LED structure absorbs the blue light and transmits the near infrared light. The plate heats up due to the absorption of the blue light and emits blackbody radiation having a greater peak emission than the near infrared light. The plate is separated by an air gap or using a non-conductive layer. For a portable spectroscopy device, one or more sensors detect the emitted light that is illuminated on a target.

Description

[0001] Priority requirements This application claims priority to U.S. Provisional Patent Application Serial No. 63 / 523,480, filed June 27, 2023, which is incorporated herein by reference in its entirety. Technical Field

[0002] This disclosure relates to light-emitting diode (LED) structures. Specifically, embodiments relate to LED structures that emit light in both the visible and infrared (IR) ranges. Background Technology

[0003] Light emitters are used in a wide variety of applications. For example, the use of solid-state light emitters in spectroscopy-based applications has gained increasing attention due to their portability and relatively low cost. Nevertheless, cost and size issues remain significant challenges for such devices when multiple different emitters at different wavelengths can be incorporated into them to provide the required emission range to enable the detection of a variety of materials. Attached Figure Description

[0004] Figure 1 Exemplary devices are shown based on some examples.

[0005] Figure 2 Examples of general-purpose devices according to some embodiments are shown.

[0006] Figure 3 An exemplary LED array is shown according to some examples.

[0007] Figure 4 Cross-sections of a single LED from an LED array are shown in some examples.

[0008] Figure 5 Cross-sectional views of single-die package architectures are shown based on some examples.

[0009] Figure 6A Exemplary spectra emitted by the light conversion layer are shown according to some embodiments.

[0010] Figure 6B-6E Exemplary spectra emitted by the device are shown according to some embodiments.

[0011] Figures 7A-7D An exemplary lighting structure according to some embodiments is shown.

[0012] Figure 8 An exemplary system according to some embodiments is shown.

[0013] Figure 9 A top plan view is shown that is suitable for implementing the embodiments described herein.

[0014] Figure 10 Exemplary methods for manufacturing lighting devices are shown according to some embodiments. Detailed Implementation

[0015] Materials spectroscopy can utilize one or more light sources covering different wavelength ranges. In some instances, such wavelength ranges typically include light in the near-IR and mid-IR ranges, approximately 0.8 µm to approximately 2.5 µm and up to approximately 8 µm, respectively. Due to their small size, LEDs are preferred as light sources in mobile devices. Solid-state IR sources primarily emit light in the wavelength range between approximately 0.8 µm and approximately 2.5 µm. Solid-state IR sources include direct emitters and phosphor-converted emitters.

[0016] The emitter for phosphor conversion can include an LED that emits light with a shorter (e.g., blue) wavelength, which is then pumped with a thin layer of photon conversion material. The photon conversion material converts the blue photons from the LED into photons with mostly lower wavelengths. Wavelengths up to about 2.5 µm can be generated through phosphor conversion. The phosphor can be dispersed in an organic support (e.g., silicone rubber) or a ceramic support (e.g., Al₂O₃).

[0017] Furthermore, a limited portion of the blue light generated by the LED is converted, with the excess being emitted as blue light or dissipated by heat. The limit of heat dissipation can depend on the material; organic-based carrier materials can withstand temperatures up to about 300 to about 350°C without damage, while inorganic carriers can withstand much higher temperatures (up to several thousand degrees Celsius).

[0018] For spectroscopic applications, such as mobile spectroscopy, it may be desirable to use IR wavelengths up to 10 µm. Typically, objects emit IR radiation above absolute zero (0 Kelvin). The perfect emitter is a "blackbody" with a dominant wavelength described by Wien's law, which is approximately 2898 µm / T (K). At room temperature (293 K), the emitted wavelength is approximately 10 µm. Using Wien's law, to emit a peak wavelength of approximately 2.5 µm, the object is heated to approximately 900 °C by direct heating. Thus, the peak wavelength can shift with temperature, which can be used in embodiments where not only the steady-state peak wavelength allows the object to act as a radiation source, but also additionally during heating and / or cooling of the object.

[0019] Figure 1An exemplary device 100 according to some examples is shown. In some embodiments, other components may be present, while in other embodiments, all components may be absent. Device 100 may be, for example, a smartphone or a portable spectroscopic device. Device 100 may include both a light source 110 and a sensor 120. Sensor 120 may detect radiation associated with target 104, such as one or more gases. Processor 130 may be used to control various functions of light source 110 and sensor 120, including whether to open the shutter in an opening 108 in housing 140 of device 100. Processor 130 may be configured to determine the concentration of at least one gas based on the output of the at least one sensor. In other embodiments, processor 130 may be configured to provide elemental analysis of a sample (solid, liquid, or gas) based on the output of the at least one sensor.

[0020] Device 100 may include one or more LED arrays 112. Each of the one or more LED arrays 112 may include a plurality of LEDs 114 that can produce light as described herein. Each of the one or more LED arrays 112 may be a segmented structure in which the LEDs 114 are divided into a grid of light-emitting regions (LEDs 114) and non-light-emitting regions (between the LEDs 114).

[0021] Typically, LED 114 can be formed from one or more inorganic materials (e.g., binary compounds such as gallium arsenide (GaAs); ternary compounds such as aluminum gallium arsenide (AlGaAs); quaternary compounds such as indium gallium phosphide (InGaAsP); gallium nitride (GaN), or other suitable materials), typically group III-V materials (defined by columns in the periodic table) or group II-VI materials. Each LED 114 can emit light in the visible spectrum (from about 400 nm to about 800 nm) or light in the infrared spectrum (above about 800 nm). In other embodiments, the LED emits at other wavelengths, such as ultraviolet (UV) wavelengths.

[0022] LED114 can be formed by combining n-type and p-type semiconductors on a substrate such as sapphire, alumina (Al2O3), or silicon carbide (SiC). Specifically, during the manufacture of LED114, various layers are deposited and processed on the substrate. Before depositing each layer, the surface of the substrate can be pretreated by annealing, etching, polishing, etc.

[0023] Typically, various LED layers can be fabricated using epitaxial semiconductor deposition (e.g., via metal-organic chemical vapor deposition) to deposit one or more semiconductor layers, metal deposition (e.g., via sputtering), oxide growth, and operations such as etching, lift-off, and cleaning. After fabrication and after contacts on a backplane are attached via metal bonding (e.g., via wire bonding or ball bonding), the substrate can be removed from the LED structure. The backplane can be a printed circuit board or a wafer containing integrated circuits (ICs), such as a CMOS IC wafer. Semiconductor deposition operations can be used to produce LEDs with active regions where electron-hole recombination occurs and light is generated from LED114. The active regions can be, for example, one or more quantum wells. Metal contacts can be used to provide drive current to n-type and p-type semiconductors from an IC (such as a driver) on a backplane where LED114 is disposed. Methods for depositing materials, layers, and thin films can include, for example, sputtering deposition, atomic layer deposition (ALD), chemical vapor deposition (CVD), physical vapor deposition (PVD), plasma-enhanced atomic layer deposition (PEALD), plasma-enhanced chemical vapor deposition (PECVD), and combinations thereof.

[0024] In some embodiments, one or more other layers (such as phosphor conversion layer 112a containing phosphor particles) may be arranged on each LED 114 or one or more LED arrays 112 to convert at least a portion of the light from the LED 114 into light of different wavelengths. For example, blue light from a GaN LED can be converted into near-infrared light or white light by phosphor conversion layer 112a.

[0025] Each of the one or more LED arrays 112 can be, for example, a microLED or a small LED array. A microLED array contains thousands to millions of microscopic LEDs that emit light and can be controlled individually or in groups of pixels (e.g., a 5x5 pixel group). MicroLEDs are small (e.g., <0.01 mm on one side) and can provide monochromatic or multicolor light using inorganic semiconductor materials (as noted above), typically red, green, blue, or yellow. LEDs can have, for example, a diameter of approximately 4 mm. 2 Sizes of 250 micrometers x 250 micrometers or larger.

[0026] The light source 110 may include at least one lens 116 and / or other optical elements, such as a reflector. In different embodiments, a single lens 116 may be disposed on all LED arrays 112, multiple lenses 116 may be disposed on all LED arrays 112, wherein a single lens 116 is disposed on one or more LED arrays 112, or multiple lenses 116 may be disposed on each LED array 112, wherein a single lens 116 is disposed on one or more LEDs 114 of each LED array 112. At least one lens 116 and / or other optical elements may guide light emitted by one or more LED arrays 112 as illumination 102 toward target 104.

[0027] Sensor 120 can sense light emitted at one or more wavelengths by the one or more LED arrays 112 and / or radiation emitted by the target 104 in response to absorbing light from the one or more LED arrays 112. Similar to light source 110, sensor 120 may include optics (e.g., at least one sensor lens 122) capable of collecting or redirecting radiation 106 reflected from and / or emitted by target 104. Sensor lens 122 may direct radiation 106 to one or more multi-pixel detectors 124 to provide data signals. The one or more multi-pixel detectors 124 may include, for example, photodiodes or one or more other detectors capable of detecting light within a wavelength range of interest.

[0028] The one or more multi-pixel detectors 124 may include multiple different arrays to sense visible light and / or infrared light (e.g., from target 104). The one or more multi-pixel detectors 124 may have one or more segments similar to the LED array 112 (capable of sensing the same wavelength / wavelength range or different wavelength / wavelength ranges).

[0029] In some embodiments, instead of additionally, one or more multi-pixel detectors 124 disposed in sensor 120 may be disposed in light source 110. In some embodiments, light source 110 and sensor 120 may be integrated in a single module, while in other embodiments, light source 110 and sensor 120 may be separate modules disposed on a printed circuit board (PCB) or other mounting. In other embodiments, light source 110 and sensor 120 may be attached to different PCBs or mountings.

[0030] Processor 130 can receive data signals representing information about target 104. Processor 130 can additionally control and drive LEDs 114 in one or more LED arrays 112 via one or more drivers 132. For example, processor 130 can optionally control one or more LEDs 114 in one or more LED arrays 112 independently of another one or more LEDs 114 in the one or more LED arrays 112, thereby illuminating target 104 in a specified manner. In some embodiments, if multiple detectors are used, one or more detectors can detect visible wavelengths, and one or more detectors can detect infrared wavelengths; similar to one or more LED arrays 112, one or more multi-pixel detectors 124 can be individually controlled by processor 130.

[0031] LED114 can be driven in an analog or digital manner, that is, using a DC driver or pulse width modulation (PWM). As shown, driver 132 can be used to drive LED114 in LED array 112 and other components, such as actuators.

[0032] The lighting device 100 may also include an input device, such as a user-activated input device (e.g., a pressed button). The light source 110 and the sensor 120 may be housed in a single housing 140.

[0033] Inorganic LEDs and LED architectures can be used to create different types of devices. Depending on the size of the LED matrix or display and the characteristics of pixels per inch, individual LED pixels in these architectures can have an area ranging from several square millimeters to several square micrometers. One approach is to create a monolithic array of LED pixels on an epitaxial wafer and then transfer and composite the LED array to a backplane to control the individual pixels. One embodiment of such a monolithic array uses metal (e.g., aluminum (Al) or silver (Ag)-based) side contacts. These contacts serve as the cathode for each pixel and also provide reflective sidewalls between pixels to reduce light scattering and propagation in the lateral direction.

[0034] Figure 2 Examples of general-purpose devices according to some embodiments are shown. For example, device 200 may be a mobile device such as a laptop computer (PC), tablet PC, smartphone, or augmented reality (AR) / virtual reality (VR), automotive device, or spectroscopic device. Different elements may be provided on the backplane indicated above, while other elements may be local or remote. As described herein, examples may include or operate on logical components or components, modules, or mechanisms.

[0035] Modules and components are tangible entities (e.g., hardware) capable of performing specified operations and can be configured or arranged in a certain way. In an example, circuitry can be arranged as a module in a specified manner (e.g., internally or relative to external entities such as other circuitry). In an example, all or part of one or more computer systems (e.g., standalone client or server computer systems) or one or more hardware processors can be configured as a module by firmware or software (e.g., instructions, application portions, or applications) to operate the module and perform specified operations. In an example, the software can reside on a machine-readable medium. In an example, when executed by the underlying hardware of the module, the software causes the hardware to perform the specified operations.

[0036] Therefore, the terms "module" (and "component") are understood to include tangible entities, meaning entities that are physically constructed, specifically configured (e.g., hardwired), or temporarily (e.g., transiently) configured (e.g., programmed) to operate or perform part or all of any of the operations described herein in a specified manner. Considering instances where modules are temporarily configured, each of the modules does not need to be instantiated at any given moment in the time domain. For example, in the case where a module comprises a general-purpose hardware processor configured using software, the general-purpose hardware processor can be configured as different modules at different times. The software can accordingly configure the hardware processor, for example, to constitute a particular module in one instance and different modules in instances at different times.

[0037] Electronic device 200 may include a hardware processor (or equivalent processing circuitry) 202 (e.g., a central processing unit (CPU), GPU, hardware processor core, or any combination thereof) and memory 204 (which may include main memory and static memory), some or all of which may communicate with each other via a link (e.g., a bus) 208. Memory 204 may include any or all of removable and non-removable memory, volatile memory, or non-volatile memory. Electronic device 200 may further include a display / light source 210 (such as an LED or video display as described above), an alphanumeric input device 212 (e.g., a keyboard), and a user interface (UI) navigation device 214 (e.g., a mouse). In an example, the display / light source 210, input device 212, and UI navigation device 214 may be a touchscreen display. Electronic device 200 may additionally include a storage device (e.g., a drive unit) 216, a signal generation device 218 (e.g., a speaker), a network interface device 220, one or more cameras 228, and one or more sensors 230 (such as a Global Positioning System (GPS) sensor, a compass, an accelerometer, or other sensors such as those described herein). Electronic device 200 may further include an output controller, such as serial (e.g., Universal Serial Bus (USB), parallel, or other wired or wireless (e.g., infrared (IR), near field communication (NFC), etc.)) connected, to communicate with or control one or more peripheral devices (e.g., printers, card readers, etc.).

[0038] Storage device 216 may include non-transient machine-readable medium 222 (hereinafter simply referred to as machine-readable medium) on which one or more sets of data structures or instructions 224 (e.g., software) are stored, which embody or are utilized by any one or more of the techniques or functions described herein. Instructions 224 may also reside wholly or at least partially within memory 204 and / or hardware processor 202 during execution by electronic device 200. While machine-readable medium 222 is shown as a single medium, the term "machine-readable medium" may include a single medium or multiple media (e.g., a centralized or distributed database, and / or associated caches and servers) configured to store one or more instructions 224.

[0039] The term "machine-readable medium" can include any medium capable of storing, encoding, or carrying instructions for execution by electronic device 200 and causing electronic device 200 to perform any one or more of the technologies disclosed herein, or capable of storing, encoding, or carrying data structures used by or associated with such instructions. Examples of non-limiting machine-readable media can include solid-state memory, as well as optical and magnetic media. Specific examples of machine-readable media can include: non-volatile memory, such as semiconductor memory devices (e.g., electrically programmable read-only memory (EPROM), electrically erasable programmable read-only memory (EEPROM)) and flash memory devices; magnetic disks, such as internal hard disks and removable disks; magneto-optical disks; random access memory (RAM); and CD-ROM and DVD-ROM disks.

[0040] Commands 224 can be further transmitted or received over a communication network via network interface device 220 using transmission medium 226, utilizing any of multiple wireless local area network (WLAN) transport protocols or SPI or CAN buses. Exemplary communication networks may include local area networks (LANs), wide area networks (WANs), packet data networks (e.g., the Internet), mobile phone networks (e.g., cellular networks), common-use telephone (POTS) networks, and wireless data networks. Communication over the network may include one or more different protocols, such as the IEEE 802.11 family of standards known as Wi-Fi, the IEEE 802.16 family of standards known as WiMax, the IEEE 802.16.4 family of standards, the Long Term Evolution (LTE) family of standards, the Universal Mobile Telecommunications System (UMTS) family of standards, peer-to-peer (P2P) networks, next-generation (NG) / 6th generation (6G) standards, etc. In this example, network interface device 220 may include one or more physical jacks (e.g., Ethernet, coaxial, or telephone jacks) or one or more antennas for connection to transmission medium 226.

[0041] Note that, as used herein, the term "circuit" refers to a hardware component, is part of a hardware component, or includes a hardware component, such as electronic circuits, logic circuits, processors (shared, dedicated, or grouped) and / or memories (shared, dedicated, or grouped), application-specific integrated circuits (ASICs), field-programmable devices (FPDs) (e.g., field-programmable gate arrays (FPGAs), programmable logic devices (PLDs), complex PLDs (CPLDs), high-capacity PLDs (HCPLDs), structured ASICs, or programmable SoCs), digital signal processors (DSPs), etc., which are configured to provide the described functions. In some embodiments, the circuit may execute one or more software or firmware programs to provide at least some of the described functions. The term "circuit" may also refer to a combination of one or more hardware elements (or a combination of circuits used in an electrical or electronic system) and program code for performing the functions described in the program code. In these embodiments, the combination of hardware elements and program code may be referred to as a particular type of circuit.

[0042] Therefore, as used herein, the terms "processor circuit" or "processor" refer to, or are part of, or include, a circuit capable of sequentially and automatically performing a series of arithmetic or logical operations, or recording, storing, and / or transmitting digital data. The terms "processor circuit" or "processor" may refer to one or more application processors, one or more baseband processors, a physical central processing unit (CPU), a single-core or multi-core processor, and / or any other means capable of executing or otherwise operating computer-executable instructions (such as program code, software modules, and / or functional procedures).

[0043] Camera 228 can sense light of at least one or more wavelengths emitted by the LED. Camera 228 may include optical elements (e.g., at least one camera lens) capable of collecting reflected light from illumination reflected from and / or emitted by the illumination area. The camera lens may guide the reflected light onto a multi-pixel sensor (also known as a light sensor) to form an image on the multi-pixel sensor.

[0044] The processor 202 can control and drive LEDs via one or more drivers. For example, the processor 202 can optionally control one or more other LEDs in the LED array independently of one or more LEDs in the LED array in order to illuminate an area in a specified manner.

[0045] Furthermore, sensor 230 can be integrated into camera 228 and / or light source 210. In addition to receiving reflected light from the LED, sensor 230 can sense visible light and / or infrared light and can further sense ambient light and / or changes / flicker in ambient light. The sensor can have one or more segments similar to an LED array (capable of sensing the same wavelength / wavelength range or different wavelengths / wavelength ranges).

[0046] Figure 3 An exemplary LED array 300 according to some examples is shown. Segmented LEDs 302 in the LED array 300 are separated by non-emitting regions 304. A group of LEDs 302 driven in parallel may be referred to herein as an emitter segment. In some examples, the LEDs 302 may be arranged in a linear array along orthogonal first and second dimensions. In some examples, each of the non-emitting regions 304 may be arranged as an elongated region extending along one of the first or second dimensions. As shown, at least one of the non-emitting regions 304 may extend along the entire extent of the first linear array in a continuous line. Lenses 306 and / or other optical elements may be used to shape the illumination from the LED array 300.

[0047] Figure 4 A cross-section of an LED 400 in an LED array according to some examples is shown. The LED 400 includes multiple semiconductor layers to be fabricated into a pixel 404, grown on a substrate 402 (e.g., a sapphire substrate). The substrate 402 can be any substrate on which epitaxial layers can be grown, such as sapphire. The substrate 402 may have a pattern 402a on which the epitaxial layers are grown. The pixel 404 may be formed of gallium nitride (GaN) having an n-type semiconductor 404a, a p-type semiconductor 404c adjacent to the substrate 402, and an active region 404b between the n-type semiconductor 404a and the p-type semiconductor 404c. The active region 404b may be, for example, a multiple quantum well structure in which light for emission from the pixel 404 is generated. After processing, in some embodiments, the substrate 402 may be removed.

[0048] Before etching the epitaxial GaN layer, a die layer for a chip-scale package (CSP) that allows for uniform current distribution and optical coupling can be deposited or otherwise formed. For example, uniform current injection in the p-type semiconductor 404c can be achieved by depositing a transparent conductive oxide (TCO) layer 405 (e.g., an indium tin oxide (ITO) layer) on the p-type semiconductor 404c.

[0049] To reduce Ag absorption losses, dielectric spacers 406 (such as SiO2 or SiN and / or one or more other dielectric materials) are deposited or otherwise formed on the TCO layer 405. An array of openings is etched in a uniformly distributed manner within the dielectric spacers 406 above the TCO layer 405 using, for example, a photolithography process (e.g., using photoresist). A reflective layer 408 (or other optical reflective structures such as Bragg reflectors), such as an Ag mirror, can then be formed on the dielectric spacers 406. The material forming the reflective layer 408 can fill the openings in the dielectric spacers 406 to form an e-via 406a and electrically connect the TCO layer 405 and the reflective layer 408. Thus, the e-via 406a can provide a uniform current distribution over the region of the P-type semiconductor 404c. The dielectric spacers 406 can be combined with several different dielectrics to form a composite mirror to reduce light reflected by the Ag mirror, thereby reducing the absorption losses of the Ag mirror. The addition of the composite mirror provides total internal reflection (TIR) ​​at the SiO2 / GaN interface to enhance reflection, and since the Ag mirror does not contact the p-GaN, a transparent current spreading layer (TCO layer) can be used on the p-GaN.

[0050] In various embodiments, a hard mask 410 is then deposited on the reflective layer 408. The hard mask 410 may be formed of a material significantly denser than the polymer (e.g., SiO2, SiC, or aluminum nitride (AlN)). The hard mask 410 may have openings to allow current to be injected from the p-bonded layer (p-BL) into the reflective layer 408. The hard mask 410 may have openings to allow current to be injected from the p-bonded layer (p-BL) into the reflective layer 408 and thus into the p-type semiconductor 404c, and from the n-bonded layer (n-BL) into the n-type semiconductor 404a.

[0051] The hard mask 410 is used to allow the etching of trenches and connections to the n-type semiconductor 404a. Note that while (wet or dry) etching is mentioned, other techniques can be used to form various layers, such as laser drilling, ion beam forming, etc. To subsequently insulate the pixel 404, one or more sidewall dielectric layers 412 (e.g., SiO2) can be deposited or otherwise formed on the sidewalls of the pixel 404.

[0052] Bonding layer 414 can be disposed on hard mask 410. For example, bonding layer 414 can be formed of copper (Cu) and / or aluminum (Al). In other embodiments, a single dielectric can be used to partially or completely fill the trench. In the case of a single dielectric layer, a conductive layer can be disposed on the single dielectric layer to facilitate reflection into the semiconductor layer. The trench can be about a few micrometers (e.g., up to about 10 micrometers), while the sidewall dielectric layer can be relatively thin, for example, up to about a tenth of a micrometer. The thickness of the sidewall dielectric layer can depend on the desired refractive index produced by the structure.

[0053] Figure 5 Cross-sectional views of a single-die package architecture are shown with some examples. For clarity, only a single LED die 510 is shown in package architecture 500. LED die 510 may include a semiconductor stack fabricated by combining n-type and p-type semiconductors (e.g., the III-V semiconductors described above) on a substrate such as sapphire or silicon carbide (SiC). During the fabrication of the LED as described above, various layers may be deposited and processed on the substrate. Prior to depositing the individual layers, the surface of the substrate may be pretreated by annealing, etching, polishing, etc.

[0054] The LED die 510 may also include contacts fabricated on a semiconductor stack to form electrical contacts with different layers of the semiconductor stack. The LED die 510 may be electrically coupled to, for example, a cathode under-bump metallization (UBM) (nUBM) 512a and an anode UBM (pUBM) 512b. nUBM512a and pUBM512b may be patterned and formed of metals such as copper (Cu), nickel (Ni), gold (Au), silver (Ag), and / or titanium (Ti), which may, for example, be deposited on the LED die 510.

[0055] nUBM 512a and pUBM 512b can be electrically coupled to PCB 520 via a patterned block metallization layer 514 disposed on block 522 (also referred to as the carrier). The electrical connection can be formed by direct contact (e.g., thermoforming) or by soldering and reflow processes, where solder wets the two metal interfaces and forms a solid bond upon cooling. Block metallization layer 514 can be formed of a metal (e.g., Cu), which may be the same as or different from the material used to form nUBM 512a and pUBM 512b. Block metallization layer 514 can completely overlap nUBM 512a and pUBM 512b to ensure electrical contact therebetween.

[0056] Block 522 can be formed of, for example, FR4, ceramic, or aluminum nitride (AlN). Block 522 can provide mechanical support for LED die 510. Block 522 can be disposed on thermal interface material (TIM) / electrode layer 524, which can include metals such as those described above, and may further include, for example, thermal epoxy resin or thermal grease. TIM / electrode layer 524 can act as an electrode layer, connecting block 522 to a heat sink 526, for example, formed of aluminum (Al).

[0057] In some embodiments, the light conversion layer 530 containing phosphor particles may be disposed on or adjacent to the LED die 510. For example, the light conversion layer 530 may convert a portion of the light emitted by the LED of the LED die 510 into near-infrared light. The light conversion layer 530 may be a continuous layer or may be segmented and disposed only on the LED.

[0058] A non-thermally conductive structure 532 can be used to separate the secondary emitter layer 534 from the LED die 510. In some embodiments, the non-conductive structure 532 may be a thermally conductive solid structure so as not to adversely affect the layer on which the non-conductive structure 532 is disposed at a temperature of interest (e.g., less than about 2 or about 3 W / m °C). In some embodiments, the conductive structure 532 may include a non-conductive pillar having an air gap between the secondary emitter layer 534 and the LED die 510. The air gap may have a thickness, for example, between about 0.2 mm and 0.3 mm. The secondary emitter layer 534 may partially absorb light from the LED die 510 that has not been converted by the light conversion layer 530 and, as a result, heat up to an elevated temperature. Specifically, the secondary emitter layer 534 may be thermally induced and emit infrared light while allowing unabsorbed light from the light conversion layer 530 to pass through it in other ways, as described in more detail below.

[0059] Lens 536 and / or other optical elements may be arranged across the entire LED die 510, as shown. In some embodiments, lens 536 may not contact the secondary emitter layer 534. In other embodiments, individual lenses may be disposed on each LED or LED group. In some embodiments, lens 536 (and / or another lens) may also be arranged between the secondary emitter layer 534 and the LED die 510. Light from the secondary emitter layer 534 and unabsorbed light from the light conversion layer 530 may be modulated by lens 536.

[0060] In some embodiments, the phosphor of the light conversion layer 530 is capable of emitting infrared wavelengths up to about 2.5 µm through the LED die 510. This light can be used as an amplifier for the infrared wavelengths emitted by the secondary emitter layer 534. Figure 6A Exemplary spectra emitted by the light conversion layer 530 are shown according to some embodiments, which show radiant power as a function of wavelength.

[0061] Figure 6B-6E Exemplary spectra emitted by the device are shown according to some embodiments. Figure 6B-6E The following diagram shows various spectra emitted by the device at different temperatures of the secondary emitter layer 534, specifically 450°C. Figure 6B ), 550℃ Figure 6C ), 650℃ Figure 6D ), and 750℃ ( Figure 6E As shown in the figure, with increasing temperature, the peak emission of the secondary emitter layer 534 shifts to lower and lower wavelengths relative to the emission of the phosphor in the light conversion layer 530 and becomes increasingly stronger. For example, Figure 6C The peak wavelength is approximately 4 µm.

[0062] To enable the secondary emitter layer 534 to emit blackbody radiation at mid-infrared wavelengths, the temperature of the secondary emitter layer 534 can be set to approximately 550°C. The secondary emitter layer 534 can be formed, for example, of silicon (Si) or may contain infrared-transparent fillers (e.g., Al₂O₃ or Si with filler). In some embodiments, the material used in the secondary emitter layer 534 may be transparent to infrared radiation emitted by the phosphor particles in the light conversion layer 530. In some embodiments, the material used in the secondary emitter layer 534 may absorb at least a substantial portion (e.g., greater than approximately 25%) of the infrared radiation emitted by the phosphor particles in the light conversion layer 530. The secondary emitter layer 534 may have a thickness, for example, between approximately 100 µm and approximately 700 µm. For example, the pumped LED radiation power (radiation from the LED die 510) may be approximately 1.5 W, with a dissipation of approximately 0.2 W in the phosphor layer (light conversion layer 530). The light conversion layer 530 (phosphor layer) may comprise a sintered alumina (Al2O3) layer with phosphor dopant. The remaining approximately 1.3W is absorbed by silicon (secondary emitter layer 534). The peak wavelength of the secondary emitter layer 534 may vary between approximately 3µm and approximately 5µm, and the wavelength emitted by the LED die 510 may vary between approximately 430 nm and approximately 460 nm, while the wavelength of the light conversion layer 530 may vary between approximately 1.6µm and approximately 2.1µm (although this range may be wider depending on the phosphor used). In other embodiments, the peak wavelength of the secondary emitter layer 534 may vary depending on the temperature of the secondary emitter layer 534, and in the cases indicated above (where the emission from the secondary emitter layer 534 is used for spectroscopic applications (or another application) during the heating and cooling process of the secondary emitter layer 534), the peak wavelength of the secondary emitter layer 534 may extend from approximately 3µm to approximately 10µm.

[0063] This temperature can be achieved by setting and adjusting an air gap between the LED die 510 and the secondary emitter layer 534 (e.g., Si). The secondary emitter layer 534 can be doped and / or undoped, and each doped and / or undoped secondary emitter layer can have different modulation characteristics. Modulation can be achieved by controlling a driver via a processor to change the drive current used to drive the LED die 510. The secondary emitter layer 534 is typically transparent to near-infrared wavelengths generated by the phosphor of the light conversion layer 530. The secondary emitter layer 534 can be a plate, which can be planar or can be shaped and used as an infrared optical element.

[0064] In some embodiments, other structures may be arranged between the LED die 510 and the secondary emitter layer 534. For example, a dichroic mirror that is transparent to light emitted by the LED die 510 and the light conversion layer 530 may be used to reflect the heat of the secondary emitter layer 534 toward the secondary emitter layer 534.

[0065] Figures 7A-7D Exemplary lighting structures 700a, 700b, 700c, and 700d according to some embodiments are shown. Figure 7A In this configuration, a PCB 702 can be installed, and other structures can be disposed on this PCB 702. The PCB 702 may include at least a metal core layer 702a, an isolation layer 702b (insulator), and a conductive (e.g., copper) layer 702c. A carrier 704 can be disposed on the PCB 702. Connections in the carrier 704 can be electrically coupled to the PCB 702 (e.g., ...) via solder. Figure 7D (Best illustrated in the embodiments). LED 706 may be disposed on carrier 704. Light conversion layer 708 may be disposed on LED 706. Light conversion layer 708 may contain phosphor particles. Secondary emitter layer 710 may be disposed above LED 706 and light conversion layer 708. Secondary emitter layer 710 may be supported by pillars 712 resting on carrier 704. In some embodiments, a coating of amorphous (black) silicon may be formed on the surface of secondary emitter layer 710 facing LED 706.

[0066] In addition to driving the LED 706, the temperature and flux of the secondary emitter layer 710 can be adjusted by the size and shape of the secondary emitter layer 710. In some embodiments, such as Figure 7A As shown, the area of ​​the secondary emitter layer 710 can be smaller than the area of ​​the LED 706.

[0067] Figure 7B The lighting structure 700b and Figure 7A The lighting structure is similar to that of the 700a. However, Figure 7BThe secondary emitter layer 710a in the illumination structure 700b includes a recess 710b. The recess 710b may be a recessed depression etched (e.g., wet chemical etching) or otherwise mechanically formed in the secondary emitter layer 710a to increase the surface area of ​​the secondary emitter layer 710a, or the recess 710b may include a convex protrusion extending from a flat portion of the surface of the secondary emitter layer 710a (i.e., the secondary emitter layer 710a includes a first flat surface facing the LED 706 and a second surface containing the recess, wherein the distance between the recess and the LED 706 differs from the planar portion of the second surface). The recess 710b may be used to increase the top region of the secondary emitter layer 710a for IR transmission over the bottom region facing the light conversion layer 708 and the LED 706, thereby increasing emission at the top region and reducing emission back to the light conversion layer 708 and the LED 706 when the amount of radiation is proportional to the emission area. Features other than the recess 710b shown can be used to increase the surface area of ​​the secondary emitter layer 710a in the desired direction.

[0068] In some embodiments, such as Figure 7B As shown, the area of ​​the secondary emitter layer 710a can be approximately the same as the area of ​​the LED 706. In other embodiments, the area of ​​the secondary emitter layers 710, 710a can be larger than the area of ​​the LED 706.

[0069] Figure 7A and Figure 7B The embodiments show that the secondary emitter layers 710, 710a are supported by pillars 712, which can be formed of quartz or another substantially non-thermally conductive material. Figure 7A As shown, column 712 can be placed on carrier 704, or as... Figure 7B As shown, it is placed on PCB 702. In other embodiments, such as Figure 7C As shown, the secondary emitter layers 710, 710a can be supported by a solid structure, such as a solid layer or annulus 712a, wherein strips of solid material support the corners or edges of the secondary emitter layers 710, 710a, while the middle of the material remains empty (e.g., an air gap exists between the secondary emitter layers 710, 710a and the LED 706). Such annulus can have any shape, such as circular or polygonal (e.g., rectangular). Annulus 712a can be placed on carrier 704, or as... Figure 7C As shown, it is placed on PCB 702.

[0070] Figure 7A and Figure 7B The embodiments show that the secondary emitter layers 710, 710a are supported by pillars 712, which can be formed of quartz or another non-thermally conductive material. Figure 7DIn the middle, the pillar 712 can be placed on the PCB 702. The conductive traces on the PCB 702 can be coupled to the conductive traces or vias of the carrier 704 via solder 704a.

[0071] Figure 8 Exemplary systems are shown according to some embodiments. As described above, some elements shown in system 800 may be absent, while other additional elements may be arranged in system 800. System 800 may include a controller 802 that controls lighting using a lighting structure 810 that includes one or more LED structures 812, each LED structure including one or more LEDs 814.

[0072] In some embodiments, some or all of the components described as controller 802 may be arranged on a backplane or support, such as a complementary metal-oxide-semiconductor (CMOS) backplane. Controller 802 may be coupled to or include one or more processors 804. The one or more processors 804 may receive information from a remote (e.g., user) unit to control generator 806a, for example, controlling analog signals or PWM duty cycles and / or on-time to enable system 800 to drive one or more LED structures 812.

[0073] Among other things, controller 802 may include one or more PCBs, drivers for driving LEDs using one or more channels, and WiFi or other communication modules for communicating with remote (user) devices. Controller 802 may be divided into different components arranged in one or more locations within system 800.

[0074] System 800 can be packaged in a single housing and includes a carrier, PCB, and / or CMOS backplane for powering and controlling the light generation of these LEDs. The PCB supporting the LED array may include electrical vias, heat sinks, ground planes, electrical traces, and flip-chip or other mounting systems. The carrier or PCB can be formed from any suitable material, such as ceramic, silicon, aluminum, etc. If the carrier material is conductive, an insulating layer can be formed on the substrate material, and a metal electrode pattern can be formed on top of the insulating layer. The carrier can act as a mechanical support, providing an electrical interface between the electrodes on the LED array and the power supply, and also provides a heat sink function.

[0075] Generator 806a can be controlled by processor 804 and can generate drive signals. Generator 806a can be coupled to driver 806b to drive illumination structure 810, such that one or more LED structures 812 provide the infrared light (and possibly visible light) described above. As shown, for each LED structure 812 or LED 814, one or more LED structures 812 may include a PWM switch and a current source.

[0076] System 800 may further include a power supply 820. In some embodiments, power supply 820 may be a battery that generates power for controller 802.

[0077] Figure 9 A top plan view is shown that is suitable for implementing the embodiments described herein. Figure 9 The exemplary hybrid device shown includes an LED die 910 comprising LEDs 912 in an LED structure that includes a light conversion layer and a secondary emitter layer, such as those described herein. For example, each LED 912 (or group of LEDs) in the array may correspond to a projector image element or projector pixel of a spectroscopic device. Suitable hybrid devices may include monolithic LED arrays, micro-LED arrays, etc. Each LED 912 in the LED die 910 may be individually addressable. Alternatively, groups or subsets of LEDs 912 may be addressable. Each LED 912 may have a size in the micrometer range (i.e., between 1 micrometer (µm) and 100 µm). For example, in some embodiments, the LED 912 may have a size of approximately 40 µm by 40 µm (within 10 µm by 10 µm). In some embodiments, the LED 912 may have a lateral dimension of less than 100 µm.

[0078] The LEDs 912 can be arranged in a matrix comprising one or more rows and one or more columns to define a rectangle. In other embodiments, the LEDs 912 can be arranged to define other shapes. Each LED 912 in the LED die 910 may contain from a number of LEDs (e.g., 9) to a much larger number (e.g., hundreds). In some embodiments, the height dimension of the array (including the LEDs 912, the supporting substrate and traces of the LEDs 912, and associated micro-optics) may be less than 5 mm.

[0079] Figure 9An exploded view of a 3x3 subarray 916 of LEDs 912 included in an LED die 910 is also shown. The subarray 916 may include LEDs 912, each defined by a width w1. In some exemplary embodiments, the width w1 may be about 100 µm or less (e.g., 40 µm). As shown in the subarray 916, channels 914 may be defined to extend horizontally and vertically to define rows and columns of LEDs 912. Channels 914 between LEDs 912 may have a width w2. In some embodiments, the width w2 may be about 20 µm or less (e.g., 5 µm). In some embodiments, the width w2 may be as small as 1 µm. Channels 914 may provide an air gap between adjacent emitters or may contain other materials. The distance d1 from the center of an LED 912 to the center of an adjacent LED 912 may be approximately 120 µm or less (e.g., 45 µm). It will be understood that the widths and distances provided herein are examples of one embodiment among many possible embodiments, where widths and / or other dimensions may vary.

[0080] In some exemplary embodiments, channel 914 may be defined by a width w2 that may be approximately 20 µm or less (e.g., 5 µm). In some exemplary embodiments, the width w2 may be as small as 1 µm. Channel 914 may be used to provide an air gap between adjacent LEDs 912 and may contain materials other than luminescent materials. In some exemplary embodiments, the distance d1 from the center of one LED 912 to the center of an adjacent LED 912 may be approximately 120 µm or less (e.g., 45 µm). It will be understood that the LEDs and channel widths, as well as the distances between the LEDs, are intended as examples. Those skilled in the art who read this disclosure will recognize that a range of widths and / or dimensions will apply to different implementations, and those embodiments will fall within the scope of this disclosure.

[0081] For ease of illustration, the LED 912 included in the LED die 910 is depicted herein as having a rectangular shape. However, as those skilled in the art will understand, various other emitter shapes will be suitable for implementing the LED 912 and LED die 910 in various applications, and these will fall within the scope of the embodiments described herein. Similarly, the LED die 910 in Figure 9The LED die 910 is described herein as a symmetric matrix of LEDs 912. However, depending on application and design considerations, various other implementations of the LED die 910 may be applicable to implementing the embodiments described herein. For example, in some implementations, the LED die 910 may comprise a linear array of LEDs 912, while in others, the LED die 910 may comprise a rectangular array of LEDs 912. In some embodiments, the LED die 910 may comprise a symmetric or asymmetric matrix of LEDs 912. The LED die 910 may comprise an array or matrix defined by dimensions or orders different from those described herein.

[0082] For example, in some practical applications, Figure 9 The LED die 910 shown may include LEDs 912 arranged in an asymmetric or symmetric configuration (in a wide range of array sizes and orders, such as symmetric or asymmetric matrices). For example, in some practical applications, two or more LED dies 910 may be stacked such that the LEDs 912 are arranged in rows and columns extending in three spatial directions or dimensions. It will also be understood that the LED die 910 itself may be a subarray of a larger array of LEDs 912 (not shown).

[0083] The LED die 910 can have a 90mm diameter. 2 The surface area may be larger, and a large amount of power may be required to drive the array. In some applications, this power can be as high as 60 watts or more. The LED die 910 may contain several, dozens, hundreds, thousands, or even millions of LEDs or emitters disposed within a substrate with an area of ​​centimeters or smaller. The LED may comprise an array of individual emitters disposed on the substrate, or may be a single silicon wafer, or may be a die partially or completely divided into light-emitting segments forming the LED 912. In some embodiments, the emitters may have different non-white colors.

[0084] Figure 10 Exemplary methods for manufacturing lighting devices are illustrated according to some embodiments. Not all operations can be performed in method 1000, and / or additional operations may exist. These operations can be combined with... Figure 10 The different sequences shown occur.

[0085] At operation 1002, an LED can be fabricated. The LED may include an n-type semiconductor layer, a p-type semiconductor layer, and an active region between the n-type and p-type semiconductor layers. The active layer may include, for example, one or more quantum wells designed to emit light of a specific wavelength. For example, the semiconductor may be formed of GaN and may emit blue light in operation.

[0086] At operation 1004, a phosphor-containing layer may be deposited on the LED. This phosphor-containing layer may be designed to absorb a small portion (e.g., about 5% to about 10%) of the light from the LED and emit light in the near-infrared wavelength range between about 1 µm and about 2.5 µm.

[0087] At operation 1006, the secondary emitter layer can be separated from the LED structure containing the LED and phosphor layer. The secondary emitter layer can be separated from the LED structure using non-conductive structures at edges or corners or via a solid layer. For example, the secondary emitter layer can be a layer formed of Si. This separation can be designed such that during operation, the secondary emitter layer absorbs most or all of the blue light from the LED (which remains unconverted by the phosphor-containing layer), heats (e.g., to a range between about 450°C and about 750°C), and emits radiation in the short / mid-infrared range at or above about 2.5 µm. The secondary emitter layer can be substantially transparent to light in the near-infrared wavelength range emitted by the phosphor-containing layer. Therefore, the entire device can emit light in the near-infrared and mid-infrared wavelength ranges, which, for example, can be used for spectroscopic applications.

[0088] Furthermore, the transient response of a secondary emitter layer (which can be a plate of silicon or another material) can be used to provide spectroscopic applications. During heating (and cooling), the peak wavelength of the blackbody radiator shifts; the transmission characteristics also change. The overall dose can be analyzed spectroscopically, or, depending on the specific spectroscopic task, the optimal emission at a certain moment in the time domain can be the target of that analysis.

[0089] The response of the secondary emitter layer in the system can be calibrated in-situ before measuring and analyzing a specific sample. Calibration can be performed by measuring the resistance of the secondary emitter layer to determine its temperature.

[0090] While only certain features of the systems and methods are shown and described herein, many modifications and alterations will arise in those skilled in the art upon reading and understanding the disclosed subject matter. Therefore, it should be understood that the appended claims are intended to cover all such modifications and alterations. The method operations may be performed substantially simultaneously or in different orders.

[0091] Example Example 1 is a lighting device comprising: a light-emitting diode (LED) structure configured to emit light in a first wavelength range; and a plate separated from the LED structure, the plate being configured to absorb at least some of the light emitted by the LED structure and to emit blackbody radiation in a second wavelength range caused by an increase in temperature of the plate due to the absorption of light from the LED structure, the second wavelength range having peak emission at wavelengths greater than the first wavelength range.

[0092] In Example 2, the subject matter as described in Example 1 includes: wherein the LED structure includes: a semiconductor active region configured to emit blue light as light in the first wavelength range; and a phosphor layer configured to absorb a portion of the blue light and emit light in a third wavelength range between the first wavelength range and the second wavelength range.

[0093] In Example 3, the subject matter of Example 2 includes: wherein the phosphor layer comprises a sintered alumina (Al2O3) layer having phosphor dopants.

[0094] In Example 4, the subject matter as described in Examples 2-3 includes: wherein the plate is substantially transparent to light in the third wavelength range.

[0095] In Example 5, the subject matter as described in Examples 1 to 4 includes: wherein the plate includes an infrared transparent filler configured to: heat the plate and emit light in the mid-infrared range in response to absorption of light in the first wavelength range.

[0096] In Example 6, the subject matter as described in Example 5 includes: wherein the infrared transparent filler comprises silicon.

[0097] In Example 7, the subject matter as described in Examples 1 to 6 includes: wherein the plate comprises undoped silicon, the undoped silicon being configured to heat the plate and emit light in the mid-infrared range in response to absorption of light in the first wavelength range.

[0098] In Example 8, the subject matter as described in Examples 1 to 7 includes: wherein the plate comprises doped silicon, the doped silicon being configured to heat the plate and emit light in the mid-infrared range in response to absorption of light in the first wavelength range.

[0099] In Example 9, the subject matter as described in Examples 1 to 8 includes: wherein the illumination device is configured to simultaneously emit light in a second wavelength range and a third wavelength range, the peak value of the second wavelength range being between approximately 3 µm and approximately 5 µm, and the third wavelength range being between approximately 1.6 µm and approximately 2.1 µm.

[0100] In Example 10, the subject matter as described in Examples 1 to 9 includes: a non-conductive support member configured to separate the LED structure from the board, the LED structure from the board being separated by an air gap between the non-conductive support members.

[0101] In Example 11, the subject matter as described in Examples 1 to 10 includes a non-conductive layer configured to separate the LED structure from the board.

[0102] In Example 12, the subject matter as described in Examples 1 to 11 includes: a lens having a first surface, the plate being mounted on the first surface, and light in the first wavelength range being configured to illuminate a second surface of the lens opposite to the first surface of the lens.

[0103] In Example 13, the subject matter as described in Examples 1 to 12 includes: wherein the plate includes a first flat surface facing the LED structure and a second surface containing a recess, the recess being at a different distance from the LED structure than the flat portion of the second surface.

[0104] In Example 14, the subject matter as described in Examples 1 to 13 includes a dichroic mirror, which is a structure disposed between the LED structure and the plate or a coating on the plate, the dichroic mirror being transparent to light in the first wavelength range and configured to reflect light in the second wavelength range back to the plate.

[0105] In Example 15, the subject matter as described in Examples 1 to 14 includes another LED structure configured to emit light in a third wavelength range between the peak emission of the first wavelength range and the second wavelength range, and the plate is configured to absorb a portion of the light emitted by the other LED structure and emit blackbody radiation in the second wavelength range.

[0106] In Example 16, the subject matter as described in Examples 1 to 15 includes: wherein the surface area of ​​the plate is larger than the area of ​​the LED structure and completely overlaps with the area of ​​the LED structure.

[0107] Example 17 is an electronic system comprising: an illumination device including: a light-emitting diode (LED) structure configured to emit light within a first wavelength range; and a plate separated from the LED structure, the plate being configured to absorb at least some of the light emitted by the LED structure and emit blackbody radiation within a second wavelength range, the blackbody radiation being caused by an increase in temperature of the plate due to the absorption of light from the LED structure by the plate, the second wavelength range having peak emission at wavelengths greater than the first wavelength range; and at least one sensor configured to detect light depending on the first wavelength range and the second wavelength range emitted by the illumination device.

[0108] In Example 18, the subject matter as described in Example 17 includes: wherein the LED structure includes: a semiconductor active region configured to emit blue light as light in the first wavelength range; and a phosphor layer configured to absorb a portion of the blue light and emit light in a third wavelength range between the first wavelength range and the second wavelength range.

[0109] In Example 19, the subject matter of Example 18 includes: wherein the phosphor layer comprises a sintered alumina (Al2O3) layer having phosphor dopants.

[0110] In Example 20, the subject matter as described in Examples 18-19 includes: wherein the plate is substantially transparent to light in the third wavelength range.

[0111] In Example 21, the subject matter as described in Examples 17 to 20 includes: wherein the plate includes an infrared transparent filler configured to heat the plate and emit light in the mid-infrared range in response to absorption of light in the first wavelength range.

[0112] In Example 22, the subject matter as described in Example 21 includes: wherein the infrared transparent filler comprises silicon.

[0113] In Example 23, the subject matter as described in Examples 17 to 22 includes: wherein the plate comprises undoped silicon configured to heat the plate and emit light in the mid-infrared range in response to absorption of light in the first wavelength range.

[0114] In Example 24, the subject matter as described in Examples 17 to 23 includes: wherein the plate comprises doped silicon, the doped silicon being configured to heat the plate and emit light in the mid-infrared range in response to absorption of light in the first wavelength range.

[0115] In Example 25, the subject matter as described in Examples 17 to 24 includes: wherein the illumination device is configured to simultaneously emit light in a second wavelength range and light in a third wavelength range, the peak value of the second wavelength range being between approximately 3 µm and approximately 5 µm, and the third wavelength range being between approximately 1.6 µm and approximately 2.1 µm.

[0116] In Example 26, the subject matter as described in Examples 17 to 25 includes: a non-conductive support member configured to separate the LED structure from the board, the LED structure from the board being separated by an air gap between the non-conductive support members.

[0117] In Example 27, the subject matter as described in Examples 17 through 26 includes a non-conductive layer configured to separate the LED structure from the board.

[0118] In Example 28, the subject matter as described in Examples 17 to 27 includes a lens having a first surface, the plate being mounted on the first surface, and light in the first wavelength range being configured to illuminate a second surface of the lens opposite to the first surface of the lens.

[0119] In Example 29, the subject matter of Example 28 includes a printed circuit board (PCB), on which the LED structure and the at least one sensor are mounted.

[0120] In Example 30, the subject of Example 29 includes a controller mounted on a PCB, which is configured to control the pump intensity of an LED structure to control the heating of the board and the emission of light in a second wavelength range.

[0121] In Example 31, the subject matter as described in Examples 17 to 30 includes: wherein the plate includes a first flat surface facing the LED structure and a second surface containing a recess, the recess being at a different distance from the LED structure than the flat portion of the second surface.

[0122] In Example 32, the subject matter as described in Examples 17 to 31 includes a dichroic mirror, which is a structure disposed between the LED structure and the plate or a coating on the plate, the dichroic mirror being transparent to light in the first wavelength range and configured to reflect light in the second wavelength range back to the plate.

[0123] In Example 33, the subject matter as described in Examples 17 to 32 includes another LED structure configured to emit light in a third wavelength range between the peak emission of the first wavelength range and the second wavelength range, and the plate is configured to absorb a portion of the light emitted by the other LED structure and emit blackbody radiation in the second wavelength range.

[0124] In Example 34, the subject matter as described in Examples 17 to 33 includes: wherein: the electronic system is a portable spectroscopic device, and the electronic system further includes a processor configured to provide elemental analysis of a sample illuminated by the illumination device based on the output of the at least one sensor.

[0125] In Example 35, the subject matter as described in Examples 17 to 34 includes: wherein: the electronic system is a portable spectroscopic device, and the electronic system further includes a processor configured to determine the concentration of at least one gas based on the output of the at least one sensor.

[0126] In Example 36, the subject matter as described in Examples 17 to 35 includes: wherein the surface area of ​​the plate is greater than the area of ​​the LED structure and completely overlaps with the area of ​​the LED structure.

[0127] Example 37 is a method of manufacturing an electronic device, the method comprising: arranging a light-emitting diode (LED) structure on a mounting structure; positioning a board separate from the LED structure such that, during operation, the LED structure generates light in a first wavelength range that is partially absorbed by the board, the board being heated to an elevated temperature and emitting blackbody radiation in a second wavelength range, the blackbody radiation being induced by heating the board to the elevated temperature, the second wavelength range having a peak emission greater than that of the first wavelength range; and arranging at least one sensor to detect light dependent on the light in the first wavelength range and the light in the second wavelength range emitted by the electronic device.

[0128] In Example 38, the subject matter as described in Example 37 includes: wherein the LED structure includes: a semiconductor active region configured to emit blue light as light in the first wavelength range; and a phosphor layer configured to absorb a portion of the blue light and emit light in a third wavelength range between the first wavelength range and the second wavelength range.

[0129] In Example 39, the subject matter of Example 38 includes: wherein the phosphor layer comprises a sintered alumina (Al2O3) layer having phosphor dopants.

[0130] In Example 40, the subject matter of Examples 38-39 includes: wherein the plate is substantially transparent to light in the third wavelength range.

[0131] In Example 41, the subject matter as described in Examples 37 to 40 includes: wherein the plate includes an infrared transparent filler that heats the plate and emits light in the mid-infrared range in response to absorption of light in the first wavelength range.

[0132] In Example 42, the subject matter of Example 41 includes: wherein the infrared transparent filler comprises silicon.

[0133] In Example 43, the subject matter as described in Examples 37-42 includes: wherein the plate comprises silicon, the silicon heating the plate in response to absorption of light in the first wavelength range and emitting light in the mid-infrared range.

[0134] In Example 44, the subject matter of Examples 37-43 includes: wherein, during operation, light in a second wavelength range and light in a third wavelength range are emitted simultaneously, the peak of the second wavelength range being between about 3µm and about 5µm, and the third wavelength range being between about 1.6µm and about 2.1µm.

[0135] In Example 45, the subject matter, as in Examples 37-44, includes: using a non-conductive support and an air gap between the non-conductive support to separate the LED structure and the board.

[0136] In Example 46, the subject matter, as in Examples 37-45, includes: using a non-conductive layer to separate the LED structure from the board.

[0137] In Example 47, the subject matter as described in Examples 37-46 includes: using a lens having a first surface to modulate light in a first wavelength range, the plate being mounted on the first surface, the light in the first wavelength range illuminating a second surface of the lens opposite to the first surface of the lens.

[0138] In Example 48, the subject matter of Examples 37-47 includes: mounting an LED structure and at least one sensor on a printed circuit board (PCB) that detects light in a first wavelength range and light in a second wavelength range.

[0139] In Example 49, the subject matter of Example 48 includes: mounting a controller on the PCB, the controller being configured to control the pump intensity of the LED structure to control the heating of the board and the emission of light in the second wavelength range.

[0140] In Example 50, the subject matter of Examples 37-49 includes: wherein the plate includes a flat surface containing a recess extending toward the LED structure.

[0141] In Example 51, the subject matter of Examples 37 to 50 includes: placing a dichroic mirror between the LED structure and the plate, the dichroic mirror being transparent to light in the first wavelength range and reflecting heat toward the plate.

[0142] In Example 52, the subject matter of Examples 37 to 51 includes: during operation, using another LED structure to emit light in a third wavelength range between the peak emission of the first wavelength range and the second wavelength range, the plate being configured to absorb a portion of the light emitted by the other LED structure and to emit blackbody radiation in the second wavelength range.

[0143] In Example 53, the subject matter as described in Examples 37 to 52 includes: wherein the electronic device is a portable spectroscopic device, and the method further includes providing elemental analysis of a sample illuminated by the spectroscopic device based on the output of the at least one sensor.

[0144] In Example 54, the subject matter as described in Examples 37 to 53 includes: wherein the electronic device is a portable spectroscopic device, and the method further includes determining the concentration of at least one gas based on the output of the at least one sensor during operation.

[0145] In Example 55, the subject matter as described in Examples 37 to 54 includes: wherein the surface area of ​​the plate is larger than the area of ​​the LED structure and completely overlaps with the area of ​​the LED structure.

[0146] In Example 56, the subject matter as described in Examples 37 to 55 includes: detecting light of the second wavelength range emitted by the electronic device during at least one of heating and cooling of the plate, wherein, in response, peak emission shifts over time depending on the heating and cooling of the plate.

[0147] Example 57 is at least one machine-readable medium comprising instructions that, when executed by processing circuitry, cause the processing circuitry to perform operations to achieve any one of Examples 1 to 56.

[0148] Example 58 is an apparatus that includes means for implementing any one of Examples 1 to 56.

[0149] Example 59 is a system for implementing any one of Examples 1-56.

[0150] Example 60 is a method for implementing any one of Examples 1-56.

[0151] While embodiments have been described with reference to specific exemplary embodiments, it will be apparent that various modifications and changes may be made to these embodiments without departing from the broader scope of this disclosure. Therefore, the specification and drawings are to be regarded as illustrative rather than restrictive. The accompanying drawings, which form a part of this disclosure, illustrate specific embodiments by way of example and not limitation in which the subject matter can be practiced. The illustrated embodiments have been described in sufficient detail to enable those skilled in the art to practice the teachings disclosed herein. Other embodiments may be utilized and derived therefrom, such that structural and logical substitutions and changes may be made without departing from the scope of this disclosure. Therefore, this detailed description should not be regarded as restrictive, and the scope of the different embodiments is defined only by the appended claims together with the full scope of their equivalents.

[0152] In this document, the subject matter may be referred to individually and / or collectively by the term "embodiment," which is merely for convenience and is not intended to actively limit the scope of this application to any single inventive concept (if more than one inventive concept is actually disclosed). Therefore, while specific embodiments have been shown and described herein, it should be understood that any arrangement described to achieve the same purpose may be substituted for the specific embodiments shown. This disclosure is intended to cover any and all adaptations or variations of different embodiments. After reviewing the above description, combinations of the above embodiments with other embodiments not specifically described herein will be apparent to those skilled in the art.

[0153] In this document, as is common in patent documents, the terms “a” or “an” are used to include one or more (independent of any other instance or use of “at least one” or “one or more”). In this document, unless otherwise specified, the term “or” is used to mean a non-exclusive “or”, such that “A or B” includes “A but not B”, “B but not A”, and “A and B”. In this document, the terms “including” and “in which” are used as concise English equivalents to the corresponding terms “comprising” and “wherein”. Furthermore, in the following claims, the terms “including” and “comprising” are open-ended, meaning that a system, UE, article, composition, formulation, or process including elements other than those listed after such terms in the claim is still considered to fall within the scope of that claim. Moreover, in the following claims, the terms “first,” “second,” and “third,” etc., are used merely as illustrative marks and are not intended to impose numerical requirements on their objects. As shown herein, although the term “a” is used herein, one or more associated elements may be used in different embodiments. For example, the term "processor" configured to perform a particular operation includes a single processor configured to perform all operations, as well as multiple processors individually configured to perform some or all operations (which may overlap) such that a combination of processors performs all operations. Note that unless otherwise specified, the term "about x" and similar terms (e.g., substantially) as used herein can be understood as being within 10% of x or within a range known to those skilled in the art to be within the tolerances of the described quality or quantity.

[0154] This abstract of the disclosure is provided for your understanding that it is not intended to interpret or limit the scope or meaning of the claims. Furthermore, as can be seen in the above detailed description, different features are combined in a single embodiment for the purpose of simplifying the disclosure. The approach of this disclosure should not be construed as reflecting an intention that the claimed embodiment requires more features than are expressly stated in each claim. Rather, as reflected in the following claims, the inventive subject matter lies in fewer than all features in a single disclosed embodiment. Therefore, the following claims are thus incorporated into the detailed description, wherein each claim exists independently as a separate embodiment.

Claims

1. A lighting device, comprising: A light-emitting diode (LED) structure configured to emit light within a first wavelength range; as well as A plate, separate from the LED structure, is configured to absorb at least some light emitted by the LED structure and emit blackbody radiation in a second wavelength range caused by the plate absorbing light from the LED structure, resulting in an increase in temperature of the plate. The second wavelength range has peak emission at wavelengths greater than the first wavelength range.

2. The lighting device according to claim 1, wherein, The LED structure includes: The active region of the semiconductor is configured to emit blue light as light in the first wavelength range; and The phosphor layer is configured to absorb a portion of the blue light and emit light in a third wavelength range between the first wavelength range and the second wavelength range.

3. The lighting device according to claim 2, wherein, The phosphor layer includes a sintered alumina (Al2O3) layer with phosphor dopants.

4. The lighting device according to claim 2 or 3, wherein, The plate is substantially transparent to light in the third wavelength range.

5. The lighting device according to any one of claims 1-4, wherein, The plate includes an infrared transparent filler configured to heat the plate and emit light in the mid-infrared range in response to absorption of light in the first wavelength range.

6. The lighting device according to any one of claims 1-5, wherein, The plate comprises at least one of doped silicon or undoped silicon, the doped silicon or undoped silicon being configured to heat the plate and emit light in the mid-infrared range in response to absorption of light in the first wavelength range.

7. The lighting device according to any one of claims 1-6 further includes a non-conductive support member configured to separate the LED structure from the plate, the LED structure from the plate being separated by an air gap between the non-conductive support member and the plate.

8. The lighting device according to any one of claims 1-7, further comprising a non-conductive layer configured to separate the LED structure from the plate.

9. The lighting device according to any one of claims 1-8, further comprising a lens having a first surface on which the plate is mounted, wherein light in the first wavelength range is configured to irradiate a second surface of the lens opposite to the first surface of the lens.

10. The lighting device according to any one of claims 1-9, wherein, The plate includes a first flat surface facing the LED structure and a second surface containing recesses, the recesses being at a different distance from the LED structure than the flat portion of the second surface.

11. The lighting device according to any one of claims 1-10, further comprising a dichroic mirror, the dichroic mirror being a structure disposed between the LED structure and the plate or a coating on the plate, the dichroic mirror being transparent to light in the first wavelength range and configured to reflect light in the second wavelength range back to the plate.

12. The lighting device according to any one of claims 1-11, further comprising another LED structure configured to emit light in a third wavelength range between the peak emission of the first wavelength range and the second wavelength range, the plate being configured to absorb a portion of the light emitted by the other LED structure and to emit blackbody radiation in the second wavelength range.

13. An electronic system comprising: Lighting device, including: A light-emitting diode (LED) structure configured to emit light within a first wavelength range; and A plate separate from the LED structure, the plate being configured to absorb at least some light emitted by the LED structure and emit blackbody radiation in a second wavelength range, the blackbody radiation being caused by the increased temperature of the plate due to the absorption of light from the LED structure, the second wavelength range having peak emission at wavelengths greater than the first wavelength range; and At least one sensor is configured to detect light depending on the first wavelength range and the second wavelength range emitted by the lighting device.

14. The electronic system according to claim 13, wherein, The plate includes an infrared transparent filler configured to heat the plate in response to absorption of light in the first wavelength range to emit light in the mid-infrared range.

15. The electronic system according to claim 13 or 14, further comprising at least one of the following: A non-conductive support member is configured to separate the LED structure from the plate, the LED structure being separated from the plate via an air gap between the non-conductive support members, or A non-conductive layer is configured to separate the LED structure from the board.

16. The electronic system of claim 15, further comprising: A printed circuit board (PCB), on which the LED structure and the at least one sensor are mounted; as well as A controller, mounted on the PCB, is configured to control the pump intensity of the LED structure to control the heating of the board and the emission of light in the second wavelength range.

17. The electronic system according to any one of claims 13 to 16, wherein: The electronic system is a portable spectroscopic device, and The electronic system also includes a processor configured to perform at least one of the following: Elemental analysis of a sample illuminated by the lighting device is provided based on the output of the at least one sensor, or The concentration of at least one gas is determined based on the output of the at least one sensor.

18. The electronic system according to any one of claims 13 to 17, wherein, The plate includes a first flat surface facing the LED structure and a second surface containing recesses, the recesses being at a different distance from the LED structure than the flat portion of the second surface.

19. A method of manufacturing an electronic device, the method comprising: A light-emitting diode (LED) structure is installed on the mounting structure; The plate is positioned separately from the LED structure such that during operation, the LED structure generates light in a first wavelength range that is partially absorbed by the plate, the plate is heated to an elevated temperature and emits blackbody radiation in a second wavelength range, which is induced by heating the plate to the elevated temperature, the second wavelength range having a peak emission greater than that of the first wavelength range; and At least one sensor is provided to detect light that depends on light in the first wavelength range and light in the second wavelength range emitted by the electronic device.

20. The method of claim 19, further comprising: During at least one of the heating and cooling of the plate, light in the second wavelength range emitted by the electronic device is detected, and in response, the peak emission shifts over time depending on the heating and cooling of the plate.

Images