A photoelectric detector and a manufacturing method thereof
By placing graphene within a waveguide structure, the interaction between graphene and the light field is enhanced, solving the problems of optical loss and integration limitations in graphene photodetectors, and achieving more efficient optical absorption and higher integration.
CN122294707APending Publication Date: 2026-06-26SHANGHAI INTEGRATED CIRCUIT RESEARCH & DEVELOPMENT CENTER CO LTD
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Patent Information
- Application Number
- CN202411937377.X
- Authority / Receiving Office
- CN · China
- Patent Type
- Applications(China)
- Current Assignee / Owner
- Filing Date
- 2024-12-26
- Publication Date
- 2026-06-26
AI Technical Summary
Technical Problem
Existing graphene photodetectors suffer from optical loss when promoting optical absorption, and increasing the graphene area limits the integration of the detector.
Method used
By employing a design that places graphene within the waveguide structure, the interaction between graphene and the optical field is enhanced by reducing the distance between graphene and the center of the waveguide structure's optical field. This avoids the need for plasma enhancement or increasing the graphene area, thereby reducing optical loss and improving integration.
Benefits of technology
This enhances the optical absorption effect of graphene while avoiding limitations in optical loss and integration, thus improving the performance of photodetectors.
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Figure CN122294707A_ABST
Abstract
This application relates to the field of semiconductor manufacturing and discloses a photodetector and its fabrication method, comprising: a substrate; a first cladding layer located on the upper surface of the substrate; a first waveguide located within the first cladding layer, the first waveguide and the upper surface of the first cladding layer being flush; graphene located on the upper surfaces of the first cladding layer and the first waveguide; a second waveguide located on the upper surface of the graphene; the second waveguide and the first waveguide forming a waveguide structure. The graphene is located between the first and second waveguides, and the first and second waveguides form the waveguide structure, that is, the graphene is located within the waveguide structure. The graphene is closer to the optical field center of the waveguide structure, which can enhance the interaction between the graphene and the optical field and enhance the optical absorption of the graphene. This application eliminates the need for plasma enhancement or increasing the area of the graphene, thus avoiding optical losses caused by plasma structures and avoiding the limitation on the integration density of the photodetector imposed by large-area graphene.
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