Light-emitting device, method for manufacturing the same, and display apparatus

Abstract

This application belongs to the field of display technology and relates to a light-emitting device and its fabrication method, as well as a display device. The light-emitting device includes a first electrode, a light-emitting layer, a first interface layer, and a second electrode stacked sequentially. The first interface layer is made of a composite material, which includes transition metal sulfides and metal chalcogenide complexes. By providing a first interface layer, this application can improve the electron transport efficiency of the light-emitting device, thereby increasing its luminous efficiency and lifespan.

Description

Technical Field

[0001] This application relates to the field of display technology, and more specifically, to a light-emitting device, a method for preparing the same, and a display device. Background Technology

[0002] Quantum dot light-emitting diodes (QLEDs) are a new type of display technology that has emerged rapidly in recent years. Quantum dot light-emitting diodes are devices that use colloidal quantum dots as the light-emitting layer. By introducing the quantum dot light-emitting layer between different conductive materials, light of the desired wavelength can be obtained.

[0003] In the existing technology, the electron transport efficiency of light-emitting devices is relatively low, which affects the luminous efficiency and lifespan of the devices. Summary of the Invention

[0004] This application provides a light-emitting device, which adopts the following technical solution:

[0005] A light-emitting device includes a first electrode, a light-emitting layer, a first interface layer, and a second electrode stacked sequentially; wherein the material of the first interface layer includes a composite material, and the composite material includes transition metal sulfides and metal chalcogenide complexes.

[0006] Accordingly, this application provides a method for fabricating a light-emitting device, the method comprising the following fabrication steps:

[0007] A prefabricated device is provided, the prefabricated device comprising a first electrode, a light-emitting layer, and an electronic functional layer stacked sequentially;

[0008] A first interface layer is formed on the electronic functional layer;

[0009] A second electrode is disposed on the first interface layer to obtain the light-emitting device;

[0010] The material of the first interface layer includes a composite material, which includes transition metal sulfides and metal chalcogenide complexes.

[0011] Accordingly, this application provides a display device, which includes a light-emitting device as described above or a light-emitting device prepared by the method described above.

[0012] This application improves the luminous efficiency of the light-emitting device by setting a first interface layer between the light-emitting layer and the second electrode. Attached Figure Description

[0013] To more clearly illustrate the solutions in this application or the prior art, the drawings used in the description of the embodiments or the prior art will be briefly introduced below. Obviously, the drawings described below are some embodiments of this application. For those skilled in the art, other drawings can be obtained from these drawings without creative effort.

[0014] Figure 1 This is a schematic diagram of the structure of the light-emitting device according to an embodiment of this application;

[0015] Figure 2 This is a flowchart of a method for fabricating a light-emitting device according to an embodiment of this application;

[0016] Figure 3 This is a flowchart of a method for preparing the first interface layer according to an embodiment of this application;

[0017] Figure 4 This is a flowchart of the preparation method of the first solution according to an embodiment of this application;

[0018] Figure 5 This is a flowchart of a method for preparing the second interface layer according to an embodiment of this application;

[0019] Figure 6 This is a flowchart of the preparation method of the second solution according to an embodiment of this application.

[0020] Figure label:

[0021] 1. First electrode; 2. Hole functional layer; 3. Light-emitting layer; 4. Electron functional layer; 5. First interface layer; 6. Second interface layer; 7. Second electrode. Detailed Implementation

[0022] The technical solutions of the embodiments of this application will be clearly and completely described below with reference to the accompanying drawings. Obviously, the described embodiments are only some embodiments of this application, and not all embodiments. Based on the embodiments of this application, all other embodiments obtained by those skilled in the art without creative effort are within the scope of protection of this application. Furthermore, it should be understood that the specific embodiments described herein are only for illustration and explanation of this application and are not intended to limit this application.

[0023] In this application, unless otherwise stated, directional terms such as "upper" and "lower" generally refer to the upper and lower positions of the device in its actual use or operating state, specifically the orientation shown in the accompanying drawings; while "inner" and "outer" refer to the outline of the device. Furthermore, in the description of this application, the term "comprising" means "including but not limited to". The terms first, second, third, etc., are used merely as illustrative purposes and do not impose numerical requirements or establish a numerical order.

[0024] In this application, "and / or" describes the relationship between related objects, indicating that three relationships can exist. For example, A and / or B can represent: A existing alone, A and B existing simultaneously, or B existing alone. A and B can be singular or plural.

[0025] In this application, "at least one" means one or more, and "more than one" means two or more. "One or more", "at least one of the following", or similar expressions refer to any combination of these items, including any combination of single or multiple items. For example, "at least one of a, b, or c", or "at least one of a, b, and c", can both mean: a, b, c, ab (i.e., a and b), ac, bc, or abc, where a, b, and c can be single or multiple.

[0026] Various embodiments of this application may exist in the form of a range; it should be understood that the description in the form of a range is merely for convenience and brevity and should not be construed as a hard limitation on the scope of this application; therefore, it should be considered that the range description has specifically disclosed all possible sub-ranges and single numerical values ​​within that range. For example, it should be considered that the range description from 1 to 6 has specifically disclosed sub-ranges such as from 1 to 3, from 1 to 4, from 1 to 5, from 2 to 4, from 2 to 6, from 3 to 6, etc., and single numbers within the range, such as 1, 2, 3, 4, 5, and 6, regardless of the range. Furthermore, whenever a numerical range is referred to herein, it means including any referenced number (fraction or integer) within the referred range.

[0027] To address the above problems, embodiments of this application provide a light-emitting device, referencing... Figure 1 The light-emitting device includes a first electrode 1, a light-emitting layer 3, a first interface layer 5, and a second electrode 7 stacked sequentially; wherein the material of the first interface layer 5 includes a composite material, which includes transition metal sulfides and metal chalcogenide complexes.

[0028] In this embodiment, the transition metal sulfide itself has good electrical conductivity and electron transport properties, and can be used as an electron transport material. The transition metal sulfide is connected with a metal chalcogenide complex, which can effectively prevent the agglomeration between transition metal sulfide particles, improve the uniformity and stability of the distribution of transition metal sulfide in the first interface layer 5, and thus improve the electron transport performance of the first interface layer 5. This allows electrons in the second electrode 7 to be better transported to the light-emitting layer 3 through the first interface layer 5. In particular, when an electronic functional layer 4 (which includes at least an electron transport layer) is provided between the first interface layer 5 and the light-emitting layer 3, electrons in the second electrode 7 can be better transported to the light-emitting layer 3 through the first interface layer 5 and the electronic functional layer 4, thereby improving the electron transport efficiency of the light-emitting device and thus improving the luminous efficiency and lifespan of the light-emitting device.

[0029] Metal chalcogenide complexes (MCCs) are compounds formed by metals and chalcogen elements (sulfur, selenium, tellurium). In some embodiments, the metal chalcogenide complexes include one or more of V2VI3 compounds, Sb-based metal chalcogenide complexes, transition metal chalcogenides (TMDCs), and two-dimensional transition metal chalcogenides.

[0030] Specifically, V2VI3 compounds include compounds with V=As,Sb and VI=S,Se,Te, which exist in solution as long-chain ions MX(S,Se)Yn-(M=As,Sb) and are important materials for preparing thin-film solar cells.

[0031] For Sb-based metal chalcogenide complexes, based on Sb-based metal chalcogenide complex solutions, Sb2(S) with adjustable bandgap can be prepared using a spray pyrolysis method. 1-x Se x )3 alloy thin film, used to prepare thin film solar cells.

[0032] Transition metal chalcogenides (TMDCs), such as MoS2 and WSe2, possess semiconductor properties and can be used as channel materials to compensate for the shortcomings of graphene in semiconductor performance.

[0033] Two-dimensional transition metal chalcogenides, with their inherent two-dimensional properties and strong spin-orbit coupling, show great promise for applications, especially in optoelectronic devices, catalysis, and energy.

[0034] These metal chalcogenide complexes, due to their unique electronic structure and physicochemical properties, have shown great application potential in fields such as solar cells, photoelectric converters, and catalysts.

[0035] In some embodiments, the metal chalcogenide complex and the transition metal sulfide are bonded by chemical bonds; further, the metal chalcogenide complex and the transition metal sulfide are bonded by coordination bonds. In this embodiment, the metal chalcogenide complex and the transition metal sulfide exhibit a significant synergistic effect. Typically, the metal chalcogenide complex is negatively charged and coats the surface of the transition metal sulfide, making the particles more stable through electrostatic repulsion, thus stabilizing the structure of the first interface layer 5. Additionally, the metal chalcogenide complex is hydrophilic and can adsorb residual moisture within the light-emitting device. Furthermore, the metal chalcogenide complex can reduce the interfacial barrier with the electron transport layer of the metal oxide. In other words, the combination of the metal chalcogenide complex and the transition metal sulfide not only makes the structure of the light-emitting device more stable but also reduces the interfacial barrier, thereby promoting increased efficiency and interface stability of the light-emitting device.

[0036] In this embodiment, on the one hand, the chalcogen elements in the metal chalcogen complex have lone pairs of electrons, and the chalcogen elements in the metal chalcogen complex can coordinate with the metal ions in the transition metal sulfide. Based on the coordination, the metal chalcogen complex and the transition metal sulfide can further form chemical bonds. The formation of these chemical bonds enables the metal chalcogen complex to be firmly bound to the transition metal sulfide. On the other hand, before the first interface layer 5 changes from a solution film layer to a solid film layer, the metal chalcogen complex connected to the transition metal sulfide is distributed in the solution film layer in the form of long-chain ions. The metal chalcogen complex ions have large steric hindrance, which can more effectively prevent the aggregation of transition metal sulfide particles, improve the uniformity and stability of the distribution of transition metal sulfide in the first interface layer 5, and thus improve the uniformity of the film formation of the first interface layer 5.

[0037] In some embodiments, the transition metal sulfide is selected from one or more of doped or undoped ZnS, CdS, MoS2, WS2, Cu2S, and NiS, and the doping element includes one or more of Al, Mg, Li, Mn, Y, La, Cu, Ni, Zr, Ce, Gd, Ga, and In. These materials exhibit good electrical conductivity when fabricating functional film layers for light-emitting devices.

[0038] In some embodiments, the metal chalcogenide complex is selected from As2S3, As2Se3, As2Te3, Sb3S3, Sb2Se3, Sb2Te3, NaSbS2, Cu2ZnSnS4 (CZTS), MoSe2, WSe2, MoTe2, WTe2, NbSe2, TaS2, TaSe2, TiS2, VSe2, VSe2, VS2, CrSe2, CrS2, FeSe, FeTe, NiTe2, CoSe2, HfS2, HfSe2, ZrS2, ZrSe2, CdSe, CdTe, SnS2, SnSe2, PdSe2, PtSe2, RuSe2, IrSe2, ReS2, ReSe2, OsS2, OsSe2, RhSe2, AuSe2, Ag2Se, Cu2Se, Bi2Se3, and Bi2Te3. These substances have a strong affinity for transition metal sulfides and can bind firmly to them.

[0039] Among them, NaSbS2 is a material with both ionic and covalent bond structures, similar to high-efficiency hot spot materials such as halide perovskites, and is being explored for use in the photovoltaic field.

[0040] For Cu2ZnSnS4 (CZTS), self-stabilized water-based Cu2ZnSnS4 nano-inks can be synthesized using metal chalcogenide complex solutions, and high-efficiency Cu2ZnSnS4 thin-film batteries can be prepared.

[0041] In some embodiments, in the first interface layer 5, the mass fraction of the transition metal sulfide is 40%–60%, and the mass fraction of the metal chalcogenide complex is 50%–60%. Optionally, the mass fraction of the transition metal sulfide is 40%–50%, and the mass fraction of the metal chalcogenide complex is 50%–55%. The mass fractions of the transition metal sulfide and the metal chalcogenide complex within the above ranges allow the metal chalcogenide complex to effectively bind the transition metal sulfide without becoming oversaturated, and to appropriately adsorb residual water molecules in the light-emitting device to ensure the stability of the light-emitting device.

[0042] In some optional embodiments of this example, the mass fraction of the transition metal sulfide is in the range of any one or any two of 40%, 45%, 50%, 55%, 60%, etc.; and the mass fraction of the metal chalcogenide complex is in the range of any one or any two of 50%, 52%, 54%, 56%, 58%, 60%, etc.

[0043] In some embodiments, the thickness of the first interface layer 5 is 10nm to 20nm to ensure electron transport efficiency. The thickness of the first interface layer 5 is preferably 12nm to 18nm, and more preferably 12nm to 16nm. The thickness of the first interface layer 5 varies depending on the electron transport efficiency requirements, and this application does not impose any limitations on it.

[0044] In some optional embodiments of this example, the thickness of the first interface layer 5 is within the range of any one or any two of 10nm, 12nm, 14nm, 16nm, 18nm, 20nm, etc.

[0045] In one embodiment, the light-emitting device further includes an electronic functional layer 4 located between the first interface layer 5 and the light-emitting layer 3; wherein the electronic functional layer 4 includes an electron transport layer and / or an electron injection layer, and the electron transport layer is closer to the light-emitting layer than the electron injection layer.

[0046] The material of the electron transport layer includes a metal oxide, which is selected from one or more of the following: zinc oxide, barium oxide, aluminum oxide, nickel oxide, titanium oxide, tin oxide, tantalum oxide, zirconium oxide, nickel oxide, lithium titanium oxide, zinc aluminum oxide, zinc manganese oxide, zinc tin oxide, zinc lithium oxide, and indium tin oxide, and the doped elements include one or more of the following: aluminum, magnesium, lithium, manganese, yttrium, lanthanum, copper, nickel, zirconium, cerium, and gadolinium.

[0047] The material of the electron injection layer includes one or more of LiF, NaF, KF, CsF, RbF, LiF / Yb, CsN3, NaF / Yb, CsF / Yb, MgP, MgF2, Al2O3, Ga2O3, Cs2CO3, Rb2CO3, RbBr, and lithium tetrakis(8-hydroxyquinoline)boron (LiBq4).

[0048] In some embodiments, the light-emitting device further includes a second interface layer 6, which is disposed between the first interface layer 5 and the second electrode 7, and the material of the second interface layer 6 includes a porous conductive material.

[0049] In this embodiment, the material of the second interface layer 6 includes a porous conductive material. The porous conductive material refers to a solid material possessing a certain proportion of pores (micropores, mesopores, or macropores) and capable of maintaining effective charge transport capability even in the presence of pores. On one hand, porous conductive materials have high conductivity, reaching up to 10⁻⁶. 4The S / m ratio can improve the electron injection efficiency from the second electrode 7 to the first interface layer 5 and the electronic functional layer 4. On the other hand, the metal element at the second electrode 7 is easily oxidized to form metal oxide, which affects the performance of the device. The porous conductive material has a porous structure, which can provide channels for water molecules. The water molecules remaining in the first interface layer 5 can be transported to the second electrode 7 through the channels, so that the metal oxide formed by oxidation at the second electrode 7 is reduced to the metal element, thereby protecting the metal element in the second electrode 7 from oxidation.

[0050] In some embodiments, the porous conductive material includes zinc-loving metal atoms and nitrogen atoms, and the transition metal sulfide in the first interface layer 5 includes zinc atoms. In this embodiment, the porous conductive material contains zinc-loving metal atoms and nitrogen atoms. The zinc-loving metal atoms are metal element atoms that tend to form stable chemical bonds or strong interactions with zinc. The zinc-loving metal atoms and nitrogen atoms have a strong adsorption capacity for zinc atoms in the first interface layer 5. This adsorption capacity can guide the uniform diffusion of zinc ions on the first interface layer 5, thereby avoiding the growth of zinc dendrites caused by excessively high local concentrations of zinc ions in the first interface layer 5, improving the uniform distribution of zinc ions in the first interface layer 5, and further reducing leakage current.

[0051] Furthermore, the porous conductive material includes porous carbon materials, porous carbon fibers, porous conductive polymer materials, and MOFs. Optionally, the porous conductive material includes one or more of the following: porous graphene, porous carbon nanotubes, LiFePO4@NS, PEDOT, PPy, PANI, PTh, PTV, PAQS, MOF-5, MOF-74, porous TiN, porous SnN, porous InN, and porous CuN.

[0052] In some embodiments, the thickness of the second interface layer 6 is 10nm to 15nm; specifically, the thickness of the second interface layer 6 is within the range of any one or any two of 10nm, 11nm, 12nm, 13nm, 14nm, 15nm, etc.

[0053] In some embodiments, the thickness of the second electrode 7 is 15 nm to 70 nm. Specifically, the thickness of the second electrode 7 is within the range of any one or any two of 15 nm, 20 nm, 30 nm, 40 nm, 50 nm, 60 nm, and 70 nm.

[0054] In some embodiments, the average pore size of the porous conductive material is 5 nm to 50 nm, optionally 5 nm to 8 nm; and / or, the porosity of the porous conductive material is 60% to 80% to ensure efficient water molecule transport. The aforementioned average pore size and porosity ensure effective water molecule transport and prevent excessive or rapid water molecule conduction to the electrodes. The average pore size and porosity of the porous conductive material vary depending on the water requirements, and this application does not impose any limitations on these aspects.

[0055] In some optional embodiments of this example, the average pore size of the porous conductive material is within the range of any one or any two of the following: 5nm, 10nm, 15nm, 20nm, 25nm, 30nm, 35nm, 40nm, 45nm, 50nm, etc.

[0056] In some optional embodiments of this example, the porosity of the porous conductive material is within the range of any one or any two of 60%, 65%, 70%, 75%, 80%, etc.

[0057] In some embodiments, the first electrode 1 is an anode, the second electrode 7 is a cathode, and an electronic functional layer 4 is further disposed between the first interface layer 5 and the light-emitting layer 3, the electronic functional layer 4 including an electron transport layer and / or an electron injection layer; a hole functional layer 2 is further disposed between the light-emitting layer 3 and the anode, the hole functional layer including a hole transport layer and / or a hole injection layer.

[0058] The thickness of the electron transport layer is 20 nm to 80 nm.

[0059] The thickness of the electron injection layer is 20 nm to 80 nm.

[0060] The thickness of the hole injection layer is 10nm to 100nm.

[0061] The thickness of the hole transport layer is 20nm to 120nm.

[0062] The anode and / or cathode are selected from one or more of metal electrodes, silicon-carbon electrodes, doped or undoped metal oxide electrodes, and composite electrodes; wherein, the material of the metal electrode is selected from one or more of Al, Ag, Cu, Mo, Au, Ba, Ca, and Mg; the material of the silicon-carbon electrode is selected from one or more of silicon, graphite, carbon nanotubes, graphene, and carbon fibers; the material of the doped or undoped metal oxide electrode is selected from one or more of ITO, FTO, ATO, AZO, GZO, IZO, MZO, and AMO; and the material of the composite electrode is selected from one or more of AZO / Ag / AZO, AZO / Al / AZO, ITO / Ag / ITO, ITO / Al / ITO, ZnO / Ag / ZnO, ZnO / Al / ZnO, TiO2 / Ag / TiO2, TiO2 / Al / TiO2, ZnS / Ag / ZnS, ZnS / Al / ZnS, TiO2 / Ag / TiO2, and TiO2 / Al / TiO2.

[0063] In some embodiments, the material of the light-emitting layer 3 includes one or more of organic light-emitting materials, single-structure quantum dots, and core-shell structure quantum dots. The organic light-emitting material is selected from one or more of the following: 4,4'-bis(N-carbazole)-1,1'-biphenyl:tris[2-(p-tolyl)pyridinium(III), 4,4',4”-tris(carbazole-9-yl)triphenylamine:tris[2-(p-tolyl)pyridinium, diaromatic anthracene derivatives, stilbene aromatic derivatives, pyrene derivatives, fluorene derivatives, TBPe fluorescent materials, TTPX fluorescent materials, TBRb fluorescent materials, DBP fluorescent materials, delayed fluorescence materials, TTA materials, TADF materials, thermally activated delayed materials, polymers containing BN covalent bonds, hybrid localized charge transfer excited-state materials, and excitocomplex light-emitting materials. The shell of the core-shell structure quantum dot includes one or more layers.The materials of the single-structure quantum dots, the core material of the core-shell structure quantum dots, and the shell material of the core-shell structure quantum dots are each selected from one or more of group II-VI compounds, group IV-VI compounds, group III-V compounds, and group I-III-VI compounds. The group II-VI compounds include CdS, CdSe, CdTe, ZnS, ZnSe, ZnTe, ZnO, HgS, HgSe, HgTe, CdSeS, CdSeTe, CdSTe, ZnSeS, ZnSeTe, ZnSTe, HgSeS, and Hg. One or more of the following compounds: SeTe, HgSTe, CdZnS, CdZnSe, CdZnTe, CdHgS, CdHgSe, CdHgTe, HgZnS, HgZnSe, HgZnTe, CdZnSeS, CdZnSeTe, CdZnSTe, CdHgSeS, CdHgSeTe, CdHgSTe, HgZnSeS, HgZnSeTe, and HgZnSTe; and group IV-VI compounds including SnS, SnSe, SnTe, PbS, PbSe, PbTe, SnSeS, Sn... One or more of SeTe, SnSTe, PbSeS, PbSeTe, PbSTe, SnPbS, SnPbSe, SnPbTe, SnPbSSe, SnPbSeTe, and SnPbSTe, and III-V compounds including GaN, GaP, GaAs, GaSb, AlN, AlP, AlAs, AlSb, InN, InP, InAs, InSb, GaNP, GaNAs, GaNSb, GaPAs, GaPSb, AlNP, AlNAs, AlNSb, AlPAs, and A One or more of lPSb, InNP, InNAs, InNSb, InPAs, InPSb, GaAlNP, GaAlNAs, GaAlNSb, GaAlPAs, GaAlPSb, GaInNP, GaInNAs, GaInNSb, GaInPAs, GaInPSb, InAlNP, InAlNAs, InAlNSb, InAlPAs, and InAlPSb, and one or more of group I-III-VI compounds including CuInS2, CuInSe2, and AgInS2.

[0064] The hole transport layer and the hole injection layer are each made of one or more of the following materials: TFB, CuPc, PVK, Poly-TPD, PFB, DNTPD, TCATA, TCCA, CBP, TPD, NPB, NPD, PEDOT:PSS, T·APC, MCC, F4-TCNQ, HATCN, 4,4',4'-tris(N-3-methylphenyl-N-phenylamino)triphenylamine, polyaniline, transition metal oxides, transition metal sulfides, transition metal tin compounds, doped graphene, undoped graphene, and C60; the hole transport layer is made of the following materials: TFB, PVK, Poly-TPD, PFB, DNTPD, TCATA, TCCA, CBP, TPD, NPB, NPD, PEDOT:PSS and its derivatives, TAPC, MCC, C60. 60 One or more of the following.

[0065] This application also provides a method for fabricating a light-emitting device according to any of the above examples, such as... Figure 2 As shown, it includes the following steps:

[0066] S11. Provide a prefabricated device, the prefabricated device comprising a first electrode, a light-emitting layer and an electronic functional layer stacked sequentially;

[0067] S12. A first interface layer is formed on the electronic functional layer;

[0068] S13. A second electrode is disposed on the first interface layer to obtain the light-emitting device;

[0069] The material of the first interface layer includes a composite material, which includes transition metal sulfides and metal chalcogenide complexes.

[0070] In this embodiment, the transition metal sulfide itself has good electrical conductivity and electron transport properties, and can be used as an electron transport material. The transition metal sulfide is connected with a metal chalcogenide complex, which can effectively prevent the agglomeration between transition metal sulfide particles, improve the uniformity and stability of the distribution of transition metal sulfide in the first interface layer, and thus improve the electron transport performance of the first interface layer. Electrons in the second electrode can be better transported to the electronic functional layer through the first interface layer, improving the electron transport efficiency of the light-emitting device, and thus improving the luminous efficiency and lifespan of the light-emitting device.

[0071] In some embodiments, the metal chalcogenide complex includes one or more of V2VI3 compounds, Sb-based metal chalcogenide complexes, transition metal chalcogenides (TMDCs), and two-dimensional transition metal chalcogenides.

[0072] In some embodiments, the transition metal sulfide is selected from one or more of ZnS, CdS, MoS2, WS2, Cu2S, and NiS, and the doped element includes one or more of Al, Mg, Li, Mn, Y, La, Cu, Ni, Zr, Ce, Gd, Ga, and In.

[0073] In some embodiments, the metal chalcogenide complex is selected from one or more of As2S3, As2Se3, As2Te3, Sb2S3, Sb2Se3, Sb2Te3, NaSbS2, Cu2ZnSnS4 (CZTS), MoSe2, WSe2, MoTe2, WTe2, NbSe2, TaS2, TaSe2, TiS2, VSe2, VSe2, VS2, CrSe2, CrS2, FeSe, FeTe, NiTe2, CoSe2, HfS2, HfSe2, ZrS2, ZrSe2, CdSe, CdTe, SnS2, SnSe2, PdSe2, PtSe2, RuSe2, IrSe2, ReS2, ReSe2, OsS2, OsSe2, RhSe2, AuSe2, Ag2Se, Cu2Se, Bi2Se3, and Bi2Te3.

[0074] In some embodiments, such as Figure 3 As shown, the first interface layer is formed in the following way:

[0075] S21. A first solution is provided, the first solution comprising a first solvent and a composite material dispersed in the first solvent, the composite material comprising the transition metal sulfide and the metal chalcogenide complex attached to the transition metal sulfide, the first solvent being an aqueous solvent.

[0076] In this embodiment, the transition metal sulfide itself has good electrical conductivity and electron transport properties, and can be used as an electron transport material. The transition metal sulfide is connected with a metal chalcogenide complex, which can effectively prevent the agglomeration between transition metal sulfide particles, improve the uniformity and stability of the distribution of transition metal sulfide in the first solution, and thus improve the uniformity and stability of the first interface layer film formation.

[0077] S22. The first solution is used to form a first liquid film on the electronic functional layer, and the first liquid film is brought into contact with the electronic functional layer for a preset time, wherein the material of the electronic functional layer includes metal oxide.

[0078] In this embodiment, oxygen vacancy defects generally exist on the surface of the metal oxide on the electronic functional layer. These oxygen vacancy defects can trap excitons in the light-emitting layer, leading to exciton quenching and reducing device performance. The first liquid film contains a water solvent, which can provide water molecules to the electronic functional layer. The water molecules contain hydroxyl groups, and the oxygen atoms in the hydroxyl groups can generate electrostatic interactions with the metal atoms on the surface of the metal oxide. Through this electrostatic interaction, the oxygen atoms in the hydroxyl groups can fill the oxygen vacancies on the surface of the metal oxide, prevent the generation of defect states in the metal oxide, reduce exciton quenching, and thus improve the luminous efficiency and lifespan of the light-emitting device.

[0079] In some embodiments, the metal oxide is selected from one or more of doped or undoped zinc oxide, barium oxide, aluminum oxide, nickel oxide, titanium oxide, tin oxide, tantalum oxide, zirconium oxide, nickel oxide, lithium titanium oxide, zinc aluminum oxide, zinc manganese oxide, zinc tin oxide, zinc lithium oxide, and indium tin oxide, and the doped elements include one or more of aluminum, magnesium, lithium, manganese, yttrium, lanthanum, copper, nickel, zirconium, cerium, and gadolinium.

[0080] Furthermore, in step S22, the preset duration is 10 min to 30 min. By appropriately setting the preset duration, water molecules in the first liquid film can fully contact the metal oxides in the electronic functional layer, ensuring the passivation effect of water molecules on the metal oxides. In some optional embodiments of this example, the preset duration is any one or any two of 10 min, 15 min, 20 min, 25 min, and 30 min.

[0081] S23. The first liquid film is dried to obtain the first interface layer. In step S23, drying the first liquid film removes excess moisture from it, preventing excess moisture from entering the device and affecting its performance.

[0082] Furthermore, in step S23, the drying temperature is 80℃~120℃, and / or the drying time is 10min~60min.

[0083] In some embodiments, the mass ratio of the aqueous solvent in the first liquid film to the metal oxide in the electronic functional layer is (0.2–0.5):1. By appropriately setting the mass ratio of the metal oxide to the aqueous solvent, the passivation effect of water molecules on the metal oxide in the first liquid film can be ensured. In some optional embodiments of this example, the mass ratio of the aqueous solvent in the first liquid film to the metal oxide in the electronic functional layer is any one or any two of 0.2:1, 0.3:1, 0.4:1, 0.5:1, etc.

[0084] In some embodiments, such as Figure 4 As shown, the preparation method of the first solution includes the following steps:

[0085] S31. Provide a metallic element and a chalcogenide element, and add the metallic element and the chalcogenide element to a solution M containing a sulfur ion compound and an aqueous solvent, mix them evenly, and obtain a solution N containing a metal chalcogenide complex, sulfur ions and an aqueous solvent.

[0086] In some embodiments, in step S31, the mixing temperature is 25°C to 100°C, and the stirring time is 10 min to 60 min.

[0087] In some embodiments, in step S31, the metallic element is selected from one or more of As, Sb, and Sn; the chalcogenide element is selected from one or more of S, Se, and Te; and the M solution is selected from one or more of (NH4)2S aqueous solution, hydrogen sulfide aqueous solution, and sodium sulfide aqueous solution.

[0088] In some embodiments, in step S31, the concentration of the sulfide compound in the M solution is 10 mol / mL to 20 mol / mL. In some optional embodiments of this example, the concentration of the sulfide compound is within the range of any one or any two of 10 mol / mL, 12 mol / mL, 14 mol / mL, 16 mol / mL, 18 mol / mL, 20 mol / mL, etc.

[0089] S32. The N solution is added to the metal salt solution and mixed thoroughly to obtain the first solution. The first solution comprises an aqueous solvent and a composite material dispersed in the aqueous solvent. The composite material comprises a transition metal sulfide and a metal chalcogenide complex bonded to the surface of the transition metal sulfide. Specifically, in step S32, metal ions in the metal salt react with sulfide ions in the N solution to generate a transition metal sulfide. The metal chalcogenide complex in the N solution then binds to the transition metal sulfide through chemical bonds. Furthermore, the metal chalcogenide complex bonded to the transition metal sulfide is distributed in the aqueous solvent as long-chain ions. The metal chalcogenide complex ions have significant steric hindrance, which can more effectively prevent the aggregation of transition metal sulfide particles, improve the uniformity and stability of the distribution of the transition metal sulfide in the first solution, and thus improve the uniformity of the first interfacial layer film formation.

[0090] In some embodiments, in step S32, the mixing temperature is 25°C to 100°C, and the stirring time is 10 min to 60 min.

[0091] In some embodiments, in step S32, the metal salt solution is selected from one or more of the following: zinc ion ammonia solution, zinc ion ethylenediamine solution, zinc ion amino acid solution, molybdenum ion ammonia solution, molybdenum ion ethylenediamine solution, molybdenum ion amino acid solution, cadmium ion ammonia solution, cadmium ion ethylenediamine solution, cadmium ion amino acid solution, tungsten ion ammonia solution, tungsten ion ethylenediamine solution, tungsten ion amino acid solution, copper ion ammonia solution, copper ion ethylenediamine solution, and copper ion amino acid solution.

[0092] In some embodiments, in step S32, the concentration of the metal salt in the metal salt solution is 1 mol / mL to 5 mol / mL. In some optional embodiments of this example, the concentration of the metal salt is any one or any two of 1 mol / mL, 2 mol / mL, 3 mol / mL, 4 mol / mL, 5 mol / mL, etc.

[0093] In some embodiments, the average particle size of the composite material in the first solution ranges from 2 nm to 8 nm. In some optional embodiments of this example, the average particle size of the composite material is any one or any two of 2 nm, 3 nm, 4 nm, 5 nm, 6 nm, 7 nm, and 8 nm.

[0094] In some embodiments, with the total weight of the first solution being 100%, the mass fraction of the first solvent is 50% to 80%, and the mass fraction of the composite material is 10% to 40%. In some optional embodiments of this example, the mass fraction of the first solvent is any one or any two of 50%, 60%, 70%, 80%, etc.; and the mass fraction of the composite material is any one or any two of 10%, 20%, 30%, 40%, etc.

[0095] In some embodiments, the transition metal sulfide accounts for 10% to 20% of the mass fraction of the composite material, and the metal chalcogenide complex accounts for 50% to 80% of the mass fraction of the composite material. In some optional embodiments of this example, the transition metal sulfide accounts for any one or any two of the mass fractions of the composite material, such as 10%, 12%, 14%, 16%, 18%, and 20%; and the metal chalcogenide complex accounts for any one or any two of the mass fractions of the composite material, such as 50%, 60%, 70%, and 80%.

[0096] In some embodiments, prior to the step of setting the second electrode on the first interface layer, the method further includes the step of forming a second interface layer on the first interface layer; wherein the material of the second interface layer includes a porous conductive material.

[0097] In this embodiment, the material of the second interface layer includes a porous conductive material. On one hand, the porous conductive material has good conductivity, which can improve the electron injection efficiency from the second electrode to the first interface layer and the electronic functional layer; on the other hand, the metal element at the second electrode is easily oxidized to form a metal oxide, while the porous conductive material has a porous structure, which can provide channels for the transport of water molecules. The water molecules remaining in the first interface layer can be transported to the second electrode through the channels, so that the metal oxide formed by oxidation at the second electrode is reduced to the metal element, thereby protecting the metal element in the second electrode from oxidation.

[0098] In some embodiments, such as Figure 5 As shown, the second interface layer is formed in the following way:

[0099] S41. A second solution is provided, the second solution comprising a second solvent and a porous conductive material dispersed in the second solvent;

[0100] S42. Forming a second liquid film on the first interface layer with the second solution; and

[0101] S43. The second liquid film is dried to obtain the second interface layer.

[0102] In this embodiment, with the total weight of the second solution as 100%, the mass fraction of the second solvent is 50% to 80%, and the mass fraction of the porous conductive material is 10% to 50%. In some optional embodiments of this embodiment, the mass fraction of the second solvent is any one or any two of 50%, 55%, 60%, 65%, 70%, 75%, 80%, etc.; and the mass fraction of the porous conductive material is any one or any two of 10%, 20%, 30%, 40%, 50%, etc.

[0103] In some embodiments, the porous conductive material is selected from porous carbon materials, porous carbon fibers, porous conductive polymer materials, and MOFs. Optionally, the porous conductive material includes one or more of porous graphene, porous carbon nanotubes, LiFePO4@NS, PEDOT, PPy, PANI, PTh, PTV, PAQS, MOF-5, MOF-74, porous TiN, porous SnN, porous InN, and porous CuN.

[0104] In some embodiments, the average pore size of the porous conductive material is 5nm to 50nm; optionally, the average pore size of the porous conductive material is 5nm to 8nm; in some optional embodiments of this embodiment, the average pore size of the porous conductive material is any one or any two of 5nm, 10nm, 15nm, 20nm, 25nm, 30nm, 35nm, 40nm, 45nm, 50nm, etc.

[0105] In some embodiments, the porosity of the porous conductive material is 60% to 80%. In some optional embodiments of this example, the porosity of the porous conductive material is within the range of any one or any two of 60%, 65%, 70%, 75%, 80%, etc.

[0106] In some embodiments, the second solvent is selected from one or more of ethanol, methanol, and isopropanol.

[0107] In some embodiments, such as Figure 6 As shown, the method for preparing the second solution includes the following steps:

[0108] S51. Provide an ammonium salt solution, add dicyandiammonium powder to the ammonium salt solution, mix evenly to obtain solution C; wherein, the ammonium salt solution is an aqueous solution of NH4Cl, and the dicyandiammonium particles have a porous structure, which can provide a template for the deposition of other substances.

[0109] S52. Add the metal chloride solution to the ammonium salt solution and mix thoroughly to obtain solution D; wherein the metal chloride is hydrolyzed in the ammonium salt solution to obtain metal oxide.

[0110] S53. Add the solution D to the solution C and mix them evenly to obtain solution E; wherein, solution E contains dicyandiamide particles and metal oxides, and the metal oxides can be deposited on the surface of the dicyandiamide particles.

[0111] S54. The E solution is freeze-dried to obtain a powder; wherein the powder comprises dicyandiammonium granules and metal oxides.

[0112] S55. The powder is calcined in air to obtain a porous metal oxide; wherein, dicyandiammonium dicyandiamide is removed by calcination to obtain the porous metal oxide.

[0113] S56. The porous metal oxide is subjected to nitriding treatment to obtain the porous conductive material;

[0114] S57. Dissolve the porous conductive material in the second solvent to obtain the second solution.

[0115] In some embodiments, in solution C, the mass ratio of NH4Cl to dicyandiamide is (1-5):1. In some optional embodiments of this example, the mass ratio of NH4Cl to dicyandiamide is any one or any two of 1:1, 2:1, 3:1, 4:1, 5:1, etc.

[0116] In some embodiments, in step S51, the mixing temperature is 25–80°C and the stirring time is 10–30 min.

[0117] In some embodiments, the mass ratio of the metal chloride to the NH4Cl in solution D is 1:(1 to 10). In some optional embodiments of this example, the mass ratio of the metal chloride to the NH4Cl is any one or any two of 1:1, 1:3, 1:5, 1:7, 1:10, etc.

[0118] In some embodiments, in step S52, the mixing temperature is 25°C to 80°C, and the stirring time is 10 min to 30 min.

[0119] In some embodiments, in step S53, the mass ratio of solution D to solution C is (1-5):1. In some optional embodiments of this example, the mass ratio of solution D to solution C is any one or any two of 1:1, 2:1, 3:1, 4:1, 5:1, etc.

[0120] In some embodiments, in step S53, the mixing temperature is 25°C to 80°C, and the stirring time is 10 min to 30 min.

[0121] In some embodiments, in step S54, the drying temperature is -80°C to 0°C, and the drying time is 30 min to 60 min.

[0122] In some embodiments, in step S55, the calcination time is 60 min to 500 min, and the calcination temperature is 500 °C to 1000 °C.

[0123] In some embodiments, in step S56, the nitriding atmosphere is an ammonia atmosphere, the nitriding temperature is 600°C to 1000°C, and the nitriding time is 60 min to 300 min.

[0124] In some embodiments, the metal chloride solution is one or more of TiCl4 aqueous solution, ZnCl4 aqueous solution, and CuCl4 aqueous solution.

[0125] The preparation methods of the aforementioned first electrode, hole injection layer, hole transport layer, light-emitting layer, electron transport layer, second electrode, etc., can adopt conventional preparation methods in the art, including: solution method or vapor deposition method; optionally, the solution method includes, but is not limited to, one or more of the following: spin coating, printing method, blade coating, dip-coating method, immersion method, spraying method, roller coating method, casting method, slot coating method, and strip coating method; further, the printing method includes, but is not limited to: inkjet printing.

[0126] This application also provides a display device, which includes the light-emitting device described above or the light-emitting device prepared by the method described above.

[0127] In some implementations, the display device can be any electronic product with display functionality, including but not limited to smartphones, tablets, laptops, digital cameras, digital camcorders, smart wearable devices, smart weighing scales, in-vehicle displays, televisions, or e-book readers. Among these, smart wearable devices can be, for example, smart bracelets, smartwatches, or virtual reality devices.

[0128] The above solution will be further described below with reference to specific embodiments. The preferred embodiments of this application are detailed below:

[0129] Example 1:

[0130] This application provides a method for fabricating a light-emitting device, the method of which is as follows:

[0131] Step 1: Provide a glass substrate with an ITO anode having a thickness of 50 nm;

[0132] Step 2: Spin-coat PEDOT:PSS material onto the anode and anneal at 150°C for 20 min to obtain a hole injection layer with a thickness of 40 nm.

[0133] Step 3: Spin-coat TFB material onto the hole injection layer and anneal at 180°C for 20 min to obtain a hole transport layer with a thickness of 30 nm.

[0134] Step 4: Spin-coat F8BT material onto the hole transport layer and anneal at 140°C for 20 min to obtain a light-emitting layer with a thickness of 60 nm.

[0135] Step 5: An electron transport layer is formed on the light-emitting layer by a solution method. The material of the electron transport layer includes a metal oxide, wherein the metal oxide is zinc oxide, and the thickness of the electron transport layer is 30 nm.

[0136] Step 6: Form a first liquid film on the electron transport layer using a solution method, and bring the first liquid film into contact with the electron transport layer for 30 minutes. The first solution includes an aqueous solvent and a composite material dispersed in the aqueous solvent. The mass ratio of the aqueous solvent in the first liquid film to the metal oxide in the electron transport layer is 3:10. The composite material includes ZnS and Sn2S3 bonded to the ZnS. The mass ratio of ZnS to Sn2S3 is 1:4.

[0137] Step 7: Dry the first liquid film for 15 minutes at a temperature of 100°C to obtain the first interface layer with a thickness of 15 nm.

[0138] Step 8: Form a second interface layer on the first interface layer. The material of the second interface layer includes porous titanium nitride. The thickness of the second interface layer is 10 nm, and the porosity of the porous titanium nitride is 80%.

[0139] Step 9: Al is deposited on the second interface layer by vapor deposition to prepare the cathode. The cathode material is elemental silver and the cathode thickness is 70 nm.

[0140] Step 10: Form an encapsulation layer on the cathode to obtain a light-emitting device.

[0141] Example 2

[0142] The difference from Example 1 is as follows:

[0143] In step 6, the composite material is replaced with ZnS and As2S3 bonded to the ZnS.

[0144] Example 3

[0145] The difference from embodiment 1 of the light-emitting device is that:

[0146] In step 6, the composite material is replaced with ZnS and Sn2Se3 bonded to the ZnS.

[0147] Example 4

[0148] The difference from Embodiment 1 of the light-emitting device is that:

[0149] In step 6, the composite material is replaced with: molybdenum sulfide and Sn2S3 attached to the molybdenum sulfide.

[0150] Example 5

[0151] The difference from Embodiment 1 of the light-emitting device is that:

[0152] In step 6, the composite material is replaced with cadmium sulfide and Sn2S3 attached to the molybdenum sulfide.

[0153] Example 6

[0154] The difference from Embodiment 1 of the light-emitting device is that:

[0155] In step 5, the metal oxide is TiO.

[0156] Example 7

[0157] The difference from Embodiment 1 of the light-emitting device is that:

[0158] In step 6, the mass ratio between the aqueous solvent in the first liquid film and the metal oxide in the electron transport layer is 0.2:1.

[0159] Example 8

[0160] The difference from Embodiment 1 of the light-emitting device is that:

[0161] In step 6, the mass ratio between the aqueous solvent in the first liquid film and the metal oxide in the electron transport layer is 0.5:1.

[0162] Example 9

[0163] The difference from Embodiment 1 of the light-emitting device is that:

[0164] In step 8, the material of the second interface layer includes porous SnN.

[0165] Example 10

[0166] The difference from Embodiment 1 of the light-emitting device is that:

[0167] In step 8, the material of the second interface layer includes porous InN.

[0168] Example 11

[0169] The difference from Embodiment 1 of the light-emitting device is that:

[0170] In step 8, the porosity of the porous titanium nitride is 60%.

[0171] Example 12

[0172] The difference from Embodiment 1 of the light-emitting device is that:

[0173] In step 8, the porosity of the porous titanium nitride is 80%.

[0174] Example 13

[0175] The difference from Embodiment 1 of the light-emitting device is that:

[0176] Step 8 was not performed;

[0177] Step 9 then becomes: preparing the cathode on the first interface layer by vapor deposition.

[0178] Comparative Example 1

[0179] The difference from Embodiment 1 of the light-emitting device is that:

[0180] In step 6, the mass ratio of ZnS to Sn2S3 is 1:0.

[0181] Comparative Example 2

[0182] The difference from Embodiment 1 of the light-emitting device is that:

[0183] In step 6, the mass ratio of the aqueous solvent to the metal oxide is 0.1:1.

[0184] Comparative Example 3

[0185] The difference from Embodiment 1 of the light-emitting device is that:

[0186] In step 8, the material of the second interface layer includes porous titanium nitride with a porosity of 20%.

[0187] Comparative Example 4

[0188] The difference from Embodiment 1 of the light-emitting device is that:

[0189] Steps 6 and 7 were not performed;

[0190] Step 8 then becomes: forming a second interface layer on the electron transport layer.

[0191] Comparative Example 5

[0192] The difference from Embodiment 1 of the light-emitting device is that:

[0193] Steps 6, 7, and 8 were not performed;

[0194] Step 9 then becomes: forming a cathode on the electron transport layer.

[0195] The light-emitting devices prepared in Examples 1 to 13 and Comparative Examples 1 to 5 were subjected to current efficiency tests and lifespan tests.

[0196] The method for testing current efficiency is as follows: The luminous area is set to 2mm × 2mm = 4mm. 2 The brightness values ​​of the light-emitting device are intermittently collected within the driving voltage range of 0V to 8V. The initial voltage value for collecting the brightness is 0.5V, and the brightness is collected every 0.2V. The current efficiency of the light-emitting device under the current collection condition is obtained by dividing the brightness value collected each time by the corresponding current density.

[0197] The lifespan test method is as follows: Under constant current (2mA) drive, a 128-channel QLED lifespan test system is used to perform electroluminescence lifespan analysis on each light-emitting device, record the time (T95,h) required for each light-emitting device to decay from maximum brightness to 95%, and calculate the time (T95@1000nit,h) required for each light-emitting device to decay from 100% brightness to 95% brightness at 1000nit using the decay fitting formula.

[0198] The test results are shown in Table 1.

[0199] Table 1

[0200]

[0201]

[0202] As shown in Table 1, compared to Comparative Examples 1, 4, and 5, Examples 1-13 significantly increased the current efficiency and lifetime of the light-emitting devices by adding a first interface layer between the electron transport layer and the second electrode. This demonstrates that the first interface layer in the light-emitting device effectively improves its luminous efficiency and lifetime. This is because the first interface layer in Examples 1-8 comprises transition metal sulfides and metal chalcogenide complexes. Transition metal sulfides themselves possess good conductivity and electron transport properties, making them suitable as electron transport materials. The presence of metal chalcogenide complexes on the transition metal sulfides effectively prevents agglomeration between transition metal sulfide particles, improving the uniformity and stability of the transition metal sulfides' distribution in the first interface layer. This, in turn, enhances the electron transport performance of the first interface layer, allowing electrons from the second electrode to be better transported to the electron transport layer via the first interface layer, thus improving the electron transport efficiency of the light-emitting device and consequently its luminous efficiency and lifetime.

[0203] Based on the test results of Embodiments 1 and 13 of the light-emitting device, it can be seen that by setting a second interface layer on the first interface layer, the current efficiency and lifespan of the light-emitting device are further improved. This is because the material of the second interface layer in Embodiment 1 includes a porous conductive material. Porous conductive materials have good conductivity, which can improve the electron injection efficiency from the second electrode to the first interface layer and the electron transport layer. Furthermore, the porous conductive material has a porous structure, which can provide channels for water molecules. Water molecules remaining in the first interface layer can be transported to the second electrode through these channels, reducing the metal oxides formed due to oxidation at the second electrode to elemental metals, protecting the elemental metals in the second electrode from oxidation, thereby improving the current efficiency and lifespan of the light-emitting device.

[0204] Based on the test results of Examples 1, 7, and 8 of the light-emitting device and Comparative Example 2 of the light-emitting device, it can be seen that by setting a first liquid film containing water on the surface of the electron transport layer and appropriately setting the mass ratio between the water solvent in the first liquid film and the metal oxide in the electron transport layer, the passivation effect of water molecules on the metal oxide can be ensured, the defect state density on the surface of the electron transport layer can be effectively reduced, and the luminous efficiency and service life of the light-emitting device can be improved.

[0205] Based on the test results of Examples 1, 11, and 12 of the light-emitting device and Comparative Example 3 of the light-emitting device, it can be seen that by appropriately setting the porosity of the porous conductive material, water molecules can be effectively transported to the second electrode, protecting the metal element in the second electrode from oxidation, thereby improving the luminous efficiency and service life of the light-emitting device.

[0206] Obviously, the embodiments described above are only some embodiments of this application, not all embodiments. The accompanying drawings show preferred embodiments of this application, but do not limit the patent scope of this application. This application can be implemented in many different forms; rather, the purpose of providing these embodiments is to provide a more thorough and comprehensive understanding of the disclosure of this application. Although this application has been described in detail with reference to the foregoing embodiments, those skilled in the art can still modify the technical solutions described in the foregoing specific embodiments, or make equivalent substitutions for some of the technical features. Any equivalent structures made using the content of this application's specification and drawings, directly or indirectly applied to other related technical fields, are similarly within the scope of patent protection of this application.

Claims

1. A light-emitting device, characterized in that, The light-emitting device includes a first electrode, a light-emitting layer, a first interface layer, and a second electrode stacked sequentially. The material of the first interface layer includes a composite material, which includes transition metal sulfides and metal chalcogenide complexes.

2. The light-emitting device according to claim 1, characterized in that, The metal chalcogenide complex includes one or more of V2VI3 compounds, Sb-based metal chalcogenide complexes, transition metal chalcogenides, and two-dimensional transition metal chalcogenides; and / or, The transition metal sulfide is selected from one or more of doped or undoped ZnS, CdS, MoS2, WS2, Cu2S, and NiS, and the doped element includes one or more of Al, Mg, Li, Mn, Y, La, Cu, Ni, Zr, Ce, Gd, Ga, and In; and / or, the metal chalcogenide complex is selected from As2S3, As2Se3, As2Te3, Sb2S3, Sb2Se3, Sb2Te3, NaSbS2, Cu2ZnSnS4, MoSe2, WSe2, MoTe2, WTe2, and Nb. One or more of the following: Se2, TaS2, TaSe2, TiS2, VSe2, VSe2, VS2, CrSe2, CrS2, FeSe, FeTe, NiTe2, CoSe2, HfS2, HfSe2, ZrS2, ZrSe2, CdSe, CdTe, SnS2, SnSe2, PdSe2, PtSe2, RuSe2, IrSe2, ReS2, ReSe2, OsS2, OsSe2, RhSe2, AuSe2, Ag2Se, Cu2Se, Bi2Se3, Bi2Te3; and / or, In the first interface layer, the mass fraction of the transition metal sulfide is 40%–60%, and the mass fraction of the metal chalcogenide complex is 50%–60%. Optionally, the mass fraction of the transition metal sulfide is 40%–50%, and the mass fraction of the metal chalcogenide complex is 50%–55%; and / or, The thickness of the first interface layer is 10nm to 20nm, and optionally, the thickness of the first interface layer is 12nm to 16nm.

3. The light-emitting device according to claim 1 or 2, characterized in that, The light-emitting device further includes a second interface layer disposed between the first interface layer and the second electrode, and the material of the second interface layer includes a porous conductive material.

4. The light-emitting device according to claim 3, characterized in that, The porous conductive material includes porous carbon materials, porous carbon fibers, porous conductive polymer materials, and MOFs. Optionally, the porous conductive material includes one or more of the following: porous graphene, porous carbon nanotubes, LiFePO4@NS, PEDOT, PPy, PANI, PTh, PTV, PAQS, MOF-5, MOF-74, porous TiN, porous SnN, porous InN, and porous CuN; and / or, The thickness of the second interface layer is 10 nm to 15 nm; and / or, The thickness of the second electrode is 15 nm to 70 nm; and / or, The porous conductive material has an average pore size of 5 nm to 50 nm; optionally, the porous conductive material has an average pore size of 5 nm to 8 nm; and / or, The porosity of the porous conductive material is 60% to 80%.

5. The light-emitting device according to claim 1 or 2, characterized in that, The first electrode is the anode, the second electrode is the cathode, and an electron transport layer and / or an electron injection layer are further disposed between the first interface layer and the light-emitting layer; a hole transport layer and / or a hole injection layer are further disposed between the light-emitting layer and the anode; and / or, The thickness of the electron transport layer is 20 nm to 80 nm; and / or, The thickness of the electron injection layer is 20 nm to 80 nm; and / or, The thickness of the hole injection layer is 10 nm to 100 nm; and / or, The thickness of the hole transport layer is 20 nm to 120 nm; and / or, The anode and / or cathode are selected from one or more of metal electrodes, silicon-carbon electrodes, doped or undoped metal oxide electrodes, and composite electrodes; wherein, the material of the metal electrode is selected from one or more of Al, Ag, Cu, Mo, Au, Ba, Ca, and Mg; the material of the silicon-carbon electrode is selected from one or more of silicon, graphite, carbon nanotubes, graphene, and carbon fibers; the material of the doped or undoped metal oxide electrode is selected from one or more of ITO, FTO, ATO, AZO, GZO, IZO, MZO, and AMO; the material of the composite electrode is selected from one or more of AZO / Ag / AZO, AZO / Al / AZO, ITO / Ag / ITO, ITO / Al / ITO, ZnO / Ag / ZnO, ZnO / Al / ZnO, TiO2 / Ag / TiO2, TiO2 / Al / TiO2, ZnS / Ag / ZnS, ZnS / Al / ZnS, TiO2 / Ag / TiO2, and TiO2 / Al / TiO2; and / or The material of the light-emitting layer includes one or more of organic light-emitting materials, single-structure quantum dots, and core-shell structure quantum dots. The organic light-emitting material is selected from one or more of the following: 4,4'-bis(N-carbazole)-1,1'-biphenyl:tris[2-(p-tolyl)pyridinium(III), 4,4',4”-tris(carbazole-9-yl)triphenylamine:tris[2-(p-tolyl)pyridinium, diaromatic anthracene derivatives, stilbene aromatic derivatives, pyrene derivatives, fluorene derivatives, TBPe fluorescent materials, TTPX fluorescent materials, TBRb fluorescent materials, DBP fluorescent materials, delayed fluorescence materials, TTA materials, TADF materials, thermally activated delayed materials, polymers containing BN covalent bonds, hybrid localized charge transfer excited-state materials, and excitocomplex light-emitting materials. The shell of the core-shell structure quantum dot includes one or more layers.The materials of the single-structure quantum dots, the core material of the core-shell structure quantum dots, and the shell material of the core-shell structure quantum dots are each selected from one or more of group II-VI compounds, group IV-VI compounds, group III-V compounds, and group I-III-VI compounds. Among these, group I-VI compounds include CdS, CdSe, CdTe, ZnS, ZnSe, ZnTe, ZnO, HgS, HgSe, HgTe, CdSeS, CdSeTe, CdSTe, ZnSeS, ZnSeTe, ZnSTe, HgSeS, HgSeTe, HgSTe, CdZnS, CdZnSe, CdZnTe, CdHgS, CdHgSe, CdHgTe, HgZnS, HgZnSe, HgZnTe, and CdZn. One or more of the following: SeS, CdZnSeTe, CdZnSTe, CdHgSeS, CdHgSeTe, CdHgSTe, HgZnSeS, HgZnSeTe, and HgZnSTe; and group IV-VI compounds including SnS, SnSe, SnTe, PbS, PbSe, PbTe, SnSeS, SnSeTe, SnSTe, PbSeS, PbSeTe, PbSTe, SnPbS, SnPbSe, SnPbTe, Sn One or more of PbSSe, SnPbSeTe, and SnPbSTe; group III-V compounds including one or more of GaN, GaP, GaAs, GaSb, AlN, AlP, AlAs, AlSb, InN, InP, InAs, InSb, GaNP, GaNAs, GaNSb, GaPAs, GaPSb, AlNP, AlNAs, AlNSb, AlPAs, AlPSb, InNP, InNAs, InNSb, InPAs, InPSb, GaAlNP, GaAlNAs, GaAlNSb, GaAlPAs, GaAlPSb, GaInNP, GaInNAs, GaInNSb, GaInPAs, GaInPSb, InAlNP, InAlNAs, InAlNSb, InAlPAs, and InAlPSb; group I-III-VI compounds including one or more of CuInS2, CuInSe2, and AgInS2; and / or... The materials of the hole transport layer and the hole injection layer independently include one or more of TFB, CuPc, PVK, Poly-TPD, PFB, DNTPD, TCATA, TCCA, CBP, TPD, NPB, NPD, PEDOT:PSS, T·APC, MCC, F4-TCNQ, HATCN, 4,4',4'-tris(N-3-methylphenyl-N-phenylamino)triphenylamine, polyaniline, transition metal oxides, transition metal sulfides, transition metal tin compounds, doped graphene, undoped graphene, and C60; the material of the hole transport layer is selected from one or more of TFB, PVK, Poly-TPD, PFB, DNTPD, TCATA, TCCA, CBP, TPD, NPB, NPD, PEDOT:PSS and its derivatives, TAPC, MCC, and C60; and / or, The electron transport layer is made of a metal oxide, which is selected from one or more of the following: doped or undoped zinc oxide, barium oxide, aluminum oxide, nickel oxide, titanium oxide, tin oxide, tantalum oxide, zirconium oxide, nickel oxide, lithium titanium oxide, zinc aluminum oxide, zinc manganese oxide, zinc tin oxide, zinc lithium oxide, and indium tin oxide. The doped elements include one or more of the following: aluminum, magnesium, lithium, manganese, yttrium, lanthanum, copper, nickel, zirconium, cerium, and gadolinium; and / or... The material of the electron injection layer includes one or more of LiF, NaF, KF, CsF, RbF, LiF / Yb, CsN3, NaF / Yb, CsF / Yb, MgP, MgF2, Al2O3, Ga2O3, Cs2CO3, Rb2CO3, RbBr, and lithium tetrakis(8-hydroxyquinoline)boron (LiBq4).

6. A method for fabricating a light-emitting device, characterized in that, Includes the following steps: A prefabricated device is provided, the prefabricated device comprising a first electrode, a light-emitting layer, and an electronic functional layer stacked sequentially; A first interface layer is provided on the electronic functional layer; A second electrode is disposed on the first interface layer to obtain the light-emitting device; The material of the first interface layer includes a composite material, which includes transition metal sulfides and metal chalcogenide complexes.

7. The preparation method according to claim 6, characterized in that, The first interface layer is formed in the following way: A first solution is provided, the first solution comprising a first solvent and a composite material dispersed in the first solvent, the composite material comprising the transition metal sulfide and a metal chalcogenide complex attached to the transition metal sulfide; The first solution is used to form a first liquid film on the electronic functional layer, and the first liquid film is brought into contact with the electronic functional layer for a preset time; and The first liquid film is dried to obtain the first interface layer; The first solvent is an aqueous solvent, and the material of the electronic functional layer includes metal oxides.

8. The preparation method according to claim 7, characterized in that, The preparation method of the first solution includes the following steps: Provides metallic elements and chalcogenides; The metal element and the chalcogenide element are added to solution M containing a sulfide ion compound and an aqueous solvent, and mixed evenly to obtain solution N containing a metal chalcogenide complex, sulfide ions and an aqueous solvent. The N solution is added to the metal salt solution and mixed thoroughly to obtain the first solution; Preferably, the metallic element is selected from one or more of As, Sb, and Sn; and / or, The chalcogenides are selected from one or more of S, Se, and Te; and / or, The M solution is selected from one or more of (NH4)2S aqueous solution, hydrogen sulfide aqueous solution, and sodium sulfide aqueous solution; and / or, The metal salt solution is selected from one or more of the following: zinc ion ammonia solution, zinc ion ethylenediamine solution, zinc ion amino acid solution, molybdenum ion ammonia solution, molybdenum ion ethylenediamine solution, molybdenum ion amino acid solution, cadmium ion ammonia solution, cadmium ion ethylenediamine solution, cadmium ion amino acid solution, tungsten ion ammonia solution, tungsten ion ethylenediamine solution, tungsten ion amino acid solution, copper ion ammonia solution, copper ion ethylenediamine solution, and copper ion amino acid solution; and / or, In the M solution, the concentration of the sulfide compound is 10 mol / mL to 20 mol / mL; and / or, In the metal salt solution, the concentration of the metal salt is 1 mol / mL to 5 mol / mL; and / or, In the first solution, the average particle size of the composite material ranges from 2 nm to 8 nm; and / or, Based on the total weight of the first solution being 100%, the mass fraction of the first solvent is 50% to 80%, and the mass fraction of the composite material is 10% to 40%; and / or, The transition metal sulfide accounts for 10% to 20% of the mass fraction of the composite material, and the metal chalcogenide complex accounts for 50% to 80% of the mass fraction of the composite material; and / or, The metal chalcogenide complex includes one or more of V2VI3 compounds, Sb-based metal chalcogenide complexes, transition metal chalcogenides (TMDCs), and two-dimensional transition metal chalcogenides; and / or, The transition metal sulfide is selected from one or more of ZnS, CdS, MoS2, WS2, Cu2S, and NiS, and the doped element includes one or more of Al, Mg, Li, Mn, Y, La, Cu, Ni, Zr, Ce, Gd, Ga, and In; and / or, The metal oxide is selected from one or more of the following: doped or undoped zinc oxide, barium oxide, aluminum oxide, nickel oxide, titanium oxide, tin oxide, tantalum oxide, zirconium oxide, nickel oxide, lithium titanium oxide, zinc aluminum oxide, zinc manganese oxide, zinc tin oxide, zinc lithium oxide, and indium tin oxide. The doped elements include one or more of the following: aluminum, magnesium, lithium, manganese, yttrium, lanthanum, copper, nickel, zirconium, cerium, and gadolinium; and / or, The metal chalcogenide complex is selected from one or more of As2S3, As2Se3, As2Te3, Sb2S3, Sb3Se3, Sb2Te3, NaSbS2, Cu2ZnSnS4 (CZTS), MoSe2, WSe2, MoTe2, WTe2, NbSe2, TaS2, TaSe2, TiS3, VSe2, VSe2, CrSe2, CrS3, FeSe, FeTe, NiTe2, CoSe2, HfS2, HfSe2, ZrS2, ZrSe2, CdSe, CdTe, SnS3, SnSe2, PdSe2, PtSe2, RuSe2, IrSe2, ReS2, ReSe2, OsS2, OsSe2, RhSe2, AuSe2, Ag2Se, Cu2Se, Bi2Se3, and Bi2Te3; and / or, In the step of adding the metallic element and the chalcogenide element to solution M containing a sulfur ion compound and an aqueous solvent, the mixing temperature is 25°C to 100°C, and / or the stirring time is 10 min to 60 min; and / or, In the step of adding the N solution to the metal salt solution, the mixing temperature is 25℃~100℃, and / or the stirring time is 10min~60min; and / or, In the step of forming a first liquid film on the electronic functional layer with the first solution and contacting the first liquid film with the electronic functional layer for a preset time, the preset time is 10 min to 30 min, and / or, the mass ratio between the aqueous solvent in the first liquid film and the metal oxide in the electronic functional layer is (0.2 to 0.5):1; and / or, In the step of drying the first liquid film, the drying temperature is 80℃~120℃, and / or the drying time is 10min~60min.

9. The method for fabricating a light-emitting device according to any one of claims 6 to 8, characterized in that, Before the step of setting the second electrode on the first interface layer, the following step is also included: A second interface layer is formed on the first interface layer; The material of the second interface layer includes a porous conductive material; Preferably, the second interface layer is formed in the following manner: A second solution is provided, the second solution comprising a second solvent and the porous conductive material dispersed in the second solvent; The second solution is used to form a second liquid film on the first interface layer; and The second liquid film is dried to obtain the second interface layer.

10. The preparation method according to claim 9, characterized in that, The preparation method of the second solution includes the following steps: An ammonium salt solution is provided, and dicyandiammonium powder is added to the ammonium salt solution and mixed evenly to obtain solution C; The metal chloride solution is added to the ammonium salt solution and mixed thoroughly to obtain solution D; The solution D is added to the solution C and mixed thoroughly to obtain solution E; The E solution was freeze-dried to obtain a powder; The powder was calcined in air to obtain a porous metal oxide; The porous conductive material is obtained by nitriding the porous metal oxide. The porous conductive material is dissolved in the second solvent to obtain the second solution; Preferably, in the step of adding dicyandiammonium powder to the ammonium salt solution and mixing evenly to obtain solution C, the ammonium salt solution contains NH4Cl, and in solution C, the mass ratio of NH4Cl to dicyandiammonium is (1-5):1, and / or, the mixing temperature is 25-80℃; and / or, The stirring time is 10 min to 30 min; and / or, In the step of adding the metal chloride solution to the ammonium salt solution and mixing them evenly to obtain solution D, the ammonium salt solution contains NH4Cl, and in solution D, the mass ratio of the metal chloride to the NH4Cl is 1:(1-10), and / or, the mixing temperature is 25℃-80℃, and / or, the stirring time is 10min-30min; and / or, In the step of adding solution D to solution C, the mass ratio of solution D to solution C is (1-5):1, and / or the mixing temperature is 25℃-80℃, and / or the stirring time is 10min-30min; and / or, In the step of freeze-drying the E solution, the drying temperature is -80℃ to 0℃, and / or the drying time is 30 min to 60 min; and / or, In the step of calcining the powder in air, the calcination time is 60 min to 500 min, and / or the calcination temperature is 500 °C to 1000 °C; and / or, In the step of nitriding the porous metal oxide, the nitriding atmosphere is an ammonia atmosphere, and / or the nitriding temperature is 600℃~1000℃, and / or the nitriding time is 60min~300min; and / or The second solvent is selected from one or more of ethanol, methanol, and isopropanol; and / or, The metal chloride solution is one or more selected from TiCl4 aqueous solution, ZnCl4 aqueous solution, and CuCl4 aqueous solution; and / or, Based on the total weight of the second solution being 100%, the mass fraction of the second solvent is 50% to 80%, and the mass fraction of the porous conductive material is 10% to 50%; and / or, The porous conductive material includes porous carbon materials, porous carbon fibers, porous conductive polymer materials, and MOFs. Optionally, the porous conductive material includes one or more of the following: porous graphene, porous carbon nanotubes, LiFePO4@NS, PEDOT, PPy, PANI, PTh, PTV, PAQS, MOF-5, MOF-74, porous TiN, porous SnN, porous InN, and porous CuN; and / or, The porous conductive material has an average pore size of 5 nm to 50 nm; optionally, the porous conductive material has an average pore size of 5 nm to 8 nm; and / or, The porosity of the porous conductive material is 60% to 80%.

11. A display device, characterized in that, The display device includes the light-emitting device according to any one of claims 1 to 5, or the light-emitting device prepared by the method according to any one of claims 6 to 10.

Images