Display device

Abstract

According to one aspect of the present invention, a display device includes: a substrate; a planarization layer disposed on the substrate; a plurality of first electrodes disposed on the planarization layer; a plurality of auxiliary electrodes disposed on the planarization layer and spaced apart from the plurality of first electrodes; an organic layer located on the plurality of first electrodes and the plurality of auxiliary electrodes; and a second electrode disposed on the organic layer, wherein a portion of the upper surface and a side surface of the plurality of auxiliary electrodes are in contact with each other with the organic layer. Therefore, leakage current between a plurality of adjacent sub-pixels can be reduced by using the plurality of auxiliary electrodes.

Description

[0001] Cross-references to related applications

[0002] This application claims priority to Korean Patent Application No. 10-2024-0195984, filed on December 24, 2024, the disclosure of which is incorporated herein by reference. Technical Field

[0003] The present invention relates to a display device, and more specifically, to a display device capable of improving efficiency and power consumption. Background Technology

[0004] With the advent of the information age, the field of display devices that visually display electrical information signals is developing rapidly, and research is underway to develop the performance of various display devices, such as thinning, weight reduction, and low power consumption.

[0005] Representative display devices include liquid crystal displays (LCDs), field-emitting diode displays (FEDs), electrowetting displays (EWDs), and organic light-emitting diode displays (OLEDs).

[0006] Electroluminescent displays, represented by organic light-emitting diodes (OLEDs), are self-emissive and do not require a separate light source like liquid crystal displays (LCDs). Therefore, OLEDs can be manufactured to be lightweight and thin. Furthermore, OLEDs are advantageous in terms of power consumption because they operate at low voltages. Moreover, due to their superior performance in color reproduction, response speed, viewing angle, and contrast ratio (CR), OLEDs are expected to be used in a wide range of applications. Summary of the Invention

[0007] One objective of the embodiments of the present invention is to provide a display device that can improve power consumption and efficiency.

[0008] Another objective of this invention is to provide a display device capable of reducing leakage current between multiple adjacent sub-pixels.

[0009] The purpose of this invention is not limited to the above-described purposes, and other purposes not mentioned above will be clearly understood by those skilled in the art from the following description.

[0010] According to one aspect of the present invention, a display device includes: a substrate; a planarization layer disposed on the substrate; a plurality of first electrodes disposed on the planarization layer; a plurality of auxiliary electrodes disposed on the planarization layer and spaced apart from the plurality of first electrodes; an organic layer located on the plurality of first electrodes and the plurality of auxiliary electrodes; and a second electrode disposed on the organic layer. A portion of the upper surface and a side surface of the plurality of auxiliary electrodes are in contact with each other with the organic layer.

[0011] A display device according to another exemplary embodiment of the present invention includes: a substrate defining a plurality of sub-pixels; a plurality of transistors disposed on the substrate; a plurality of power lines disposed on the substrate; a planarization layer disposed on the plurality of transistors and the plurality of power lines; a plurality of first electrodes disposed on the planarization layer in each of the plurality of sub-pixels and electrically connected to the plurality of transistors; a plurality of auxiliary electrodes disposed between the plurality of first electrodes on the planarization layer and electrically connected to the plurality of power lines; an organic layer disposed on the plurality of first electrodes and the plurality of auxiliary electrodes; and a second electrode disposed on the organic layer, wherein a portion of the upper surface and a side surface of the plurality of auxiliary electrodes are in contact with the organic layer.

[0012] Further details of the implementation methods are included in the detailed description and accompanying drawings.

[0013] In a display device according to an exemplary embodiment of the present invention, an organic layer having a multi-light emitting unit structure is included to achieve high efficiency and low power consumption of the display device, wherein the multi-light emitting unit structure includes multiple organic light-emitting layers.

[0014] In a display device according to an exemplary embodiment of the present invention, leakage current flowing between a plurality of adjacent sub-pixels is induced to a plurality of auxiliary electrodes and a low-potential power line electrically connected to the plurality of auxiliary electrodes in order to suppress leakage current problems between the plurality of adjacent sub-pixels.

[0015] In a display device according to another exemplary embodiment of the present invention, a plurality of auxiliary electrodes are formed in a plurality of layers, and holes are formed in at least some of the plurality of auxiliary electrodes to improve contact resistance as the contact area of ​​the organic layer for electrically connecting the plurality of auxiliary electrodes and a charge generation layer having high conductivity is increased.

[0016] The effects of the present invention are not limited to those illustrated above; many more effects are included in the present invention. Attached Figure Description

[0017] The above and other aspects, features and advantages of the present invention will become more clearly understood from the following detailed description taken in conjunction with the accompanying drawings, wherein:

[0018] Figure 1 This is a block diagram illustrating a display device according to an exemplary embodiment of the present invention.

[0019] Figure 2 yes Figure 1 A magnified plan view of region A.

[0020] Figure 3 This is a schematic cross-sectional view of a sub-pixel of a display device according to an exemplary embodiment of the present invention.

[0021] Figure 4 It is along Figure 2 A cross-sectional view taken from line IV-IV'.

[0022] Figure 5 yes Figure 4 A magnified plan view of region B.

[0023] Figure 6 This is a schematic cross-sectional view of a sub-pixel of a display device according to an exemplary embodiment of the present invention.

[0024] Figure 7 This is a circuit diagram of a sub-pixel of a display device according to an exemplary embodiment of the present invention.

[0025] Figure 8 This is a schematic cross-sectional view of a display device according to another embodiment of the present invention.

[0026] Figure 9 This is a schematic cross-sectional view of a display device according to yet another exemplary embodiment of the present invention.

[0027] Figure 10 This is a schematic cross-sectional view of a display device according to yet another exemplary embodiment of the present invention. Detailed Implementation

[0028] The advantages and features of the present invention, as well as the methods for achieving these advantages and features, are described below with reference to the appendix. Figure 1 The exemplary embodiments described in detail will make it clear. However, the invention is not limited to the exemplary embodiments disclosed herein, but will be implemented in various forms. The exemplary embodiments are provided by way of example only, so that those skilled in the art can fully understand the disclosure and scope of the invention.

[0029] The shapes, dimensions, ratios, angles, quantities, etc., shown in the accompanying drawings used to describe exemplary embodiments of the present invention are merely examples, and the present invention is not limited thereto. Furthermore, in the following description of the present invention, detailed explanations of known related technologies may be omitted to avoid unnecessarily obscuring the subject matter of the invention. Terms such as “comprising,” “having,” and “including” as used herein are generally intended to allow for the addition of additional components, unless these terms are used in conjunction with the term “only.” Unless otherwise expressly stated, any reference to the singular may include the plural.

[0030] Even if not explicitly stated, the components are interpreted as including the normal error range.

[0031] When using terms such as “on top of,” “above,” “below,” and “next” to describe the positional relationship between two parts, one or more parts may be located between the two parts, unless these terms are used with the terms “immediately” or “directly.”

[0032] When one element or layer is disposed "on" another element or layer, other layers or other elements may be inserted between them, or the element or layer may be disposed directly on another element or layer.

[0033] Although the terms "first," "second," etc., are used to describe various components, these components are not limited by these terms. These terms are only used to distinguish one component from other components. Therefore, within the scope of the inventive concept, the first component mentioned below can be the second component.

[0034] Throughout the specification, similar reference numerals generally denote similar elements.

[0035] For ease of description, the dimensions and thickness of each component shown in the accompanying drawings are illustrated, but the invention is not limited to the dimensions and thickness of the components shown.

[0036] The features of the various embodiments of the present invention may be partially or completely coupled or combined with each other, and may be technically interlocked and operated in various ways, and the embodiments may be implemented independently or in conjunction with each other.

[0037] In the following, exemplary embodiments of the present invention will be described in detail with reference to the accompanying drawings.

[0038] Figure 1 This is a block diagram illustrating a display device according to an exemplary embodiment of the present invention. Figure 1 This is a schematic block diagram of a display device according to an exemplary embodiment of the present invention. Figure 1 For ease of description, among the various components of the display device 100, only the display panel PN, gate driver GD, data driver DD, and timing controller TC are shown.

[0039] Reference Figure 1 The display device 100 includes a display panel PN and a timing controller TC, wherein the display panel PN includes: a plurality of sub-pixels SP; a gate driver GD and a data driver DD that provide various signals to the display panel PN, and the timing controller TC controls the gate driver GD and the data driver DD.

[0040] The gate driver GD supplies multiple scan signals to multiple scan lines SL based on multiple gate control signals provided by the timing controller TC. Figure 1 The diagram shows a gate driver GD configured to be spaced apart from one side of the display panel PN. However, the number and arrangement of gate drivers GDs are not limited to this.

[0041] The data driver DD supplies data voltage to multiple data lines DL based on multiple data control signals and image data provided by the timing controller TC. The data driver DD can use a reference gamma voltage to convert image data into data voltage and supply the converted data voltage to the multiple data lines DL.

[0042] The timing controller TC arranges the image data input from the outside and provides the image data to the data driver DD. The timing controller TC can generate gate control signals and data control signals by using synchronization signals input from the outside (e.g., dot clock signals, data enable signals, and horizontal / vertical synchronization signals). Furthermore, the timing controller TC provides the generated gate control signals and data control signals to the gate driver GD and the data driver DD, respectively, to control the gate driver GD and the data driver DD.

[0043] The display panel PN is configured to display an image to the user and includes multiple subpixels SP. In the display panel PN, multiple scan lines SL and multiple data lines DL can intersect each other, and multiple subpixels SP can be formed at the intersections of scan lines SL and data lines DL.

[0044] In the display panel PN, the active area AA and the non-active area NA can be defined.

[0045] The active area AA is the area in the display device 100 where an image is displayed. Within the active area AA, multiple sub-pixels SP constituting multiple pixels and pixel circuitry for driving the multiple sub-pixels SP can be provided. The multiple sub-pixels SP are the smallest units constituting the active area AA, and n sub-pixels SP can form one pixel. In each of the multiple sub-pixels SP, a thin-film transistor for driving multiple light-emitting elements can be provided. The multiple light-emitting elements can be defined differently depending on the type of the display panel PN. For example, when the display panel PN is an organic light-emitting display panel, the light-emitting elements can be organic light-emitting elements.

[0046] In the active region AA, multiple signal lines are provided for transmitting various signals to multiple sub-pixels SP. For example, the multiple signal lines may include multiple data lines DL supplying data voltage to each of the multiple sub-pixels SP, multiple scan lines SL supplying scan signals to each of the multiple sub-pixels SP, etc. The multiple scan lines SL may extend in one direction within the active region AA and connect to the multiple sub-pixels SP, and the multiple data lines DL may extend in the active region AA in a direction different from this one direction and connect to the multiple sub-pixels SP. Furthermore, low-potential power lines, high-potential power lines, etc., may be further provided in the active region AA, but are not limited to these.

[0047] The non-active area NA is the area where no image is displayed and can be defined as the area extending from the active area AA. Within the non-active area NA, connection lines and pad electrodes for transmitting signals to the sub-pixels SP of the active area AA, or driver ICs such as gate driver ICs or data driver ICs, can be provided.

[0048] Meanwhile, drivers such as gate driver GD, data driver DD, and timing controller TC can be connected to the display panel PN in various ways. For example, the gate driver GD can be installed in the non-active area NA in the gate-in-panel (GIP) manner, or installed between multiple sub-pixels SP in the active area AA in the gate-in-active-area (GIA) manner.

[0049] For example, the data driver DD and the timing controller TC are formed on separate flexible films and printed circuit boards, and the display panel PN, the data driver DD, and the timing controller TC can be electrically connected by bonding the flexible film and the printed circuit board to pad electrodes formed in the non-active area NA of the display panel PN.

[0050] Figure 2 yes Figure 1 A magnified plan view of region A. Figure 2 This is a magnified view of region A. Region A is Figure 1 The image shows a portion of the active area AA of the display panel PN, and illustrates the planar shape of multiple sub-pixels SP disposed within the active area AA. Figure 2 For ease of description, only multiple first sub-pixels SP1, multiple second sub-pixels SP2, multiple third sub-pixels SP3, multiple auxiliary electrodes AE, and multiple low-potential power lines VSS are shown.

[0051] In the active region AA, multiple sub-pixels SP can be provided to constitute multiple pixels PX. For example, a pixel PX may include multiple sub-pixels SP that emit light with different wavelengths. For example, a pixel PX may include a first sub-pixel SP1, a second sub-pixel SP2, and a third sub-pixel SP3. However, the present invention is not limited thereto, and a pixel PX may also include a fourth sub-pixel (SP4). For example, the first sub-pixel SP1 may emit red light, the second sub-pixel SP2 may emit green light, and the third sub-pixel SP3 may emit blue light. For example, when the pixel PX also includes a fourth sub-pixel (SP4), the fourth sub-pixel (SP4) may emit white light.

[0052] In the active region AA, multiple auxiliary electrodes AE can be disposed in multiple pixels PX. For example, each pixel PX may include at least one auxiliary electrode AE. However, the invention is not limited thereto, and at least one auxiliary electrode AE ​​may be included in each of the multiple sub-pixels SP as needed.

[0053] Multiple auxiliary electrodes AE can be configured to be spaced apart from multiple sub-pixels SP (specifically, the first electrodes of the multiple sub-pixels SP).

[0054] In the active region AA, multiple auxiliary electrodes AE can be electrically connected to multiple low-potential power lines VSS.

[0055] Figure 3 This is a schematic cross-sectional view of a sub-pixel of a display device according to an exemplary embodiment of the present invention.

[0056] Reference Figure 3 The light-emitting element ED of the display device 100 according to an embodiment of the present invention (see Figure 4 The device may include: a first electrode E1; a hole injection layer 120; a first hole transport layer 130; a first organic light-emitting layer 140 formed by a 1-1 light-emitting layer 141, a 1-2 light-emitting layer 142, and a 1-3 light-emitting layer 143; a first electron transport layer 150; a first charge generation layer 160; a second charge generation layer 165; a second hole transport layer 170; a second organic light-emitting layer 180 formed by a 2-1 light-emitting layer 181, a 2-2 light-emitting layer 182, and a 2-3 light-emitting layer 183; a second electron transport layer 190; a second electrode E2; and a capping layer, wherein a first sub-pixel SP1, a second sub-pixel SP2, and a third sub-pixel SP3 are defined.

[0057] Furthermore, the light-emitting element ED according to an exemplary embodiment of the present invention may have the following structure: a first light-emitting unit ST1 including a first organic light-emitting layer 140 and a second light-emitting unit ST2 including a second organic light-emitting layer 180 are stacked between a first electrode E1 and a second electrode E2.

[0058] The first light-emitting unit ST1 includes a hole injection layer 120, a first hole transport layer 130, a first organic light-emitting layer 140, and a first electron transport layer 150.

[0059] In addition, the second light-emitting unit ST2 includes a second hole transport layer 170, a second organic light-emitting layer 180, and a second electron transport layer 190.

[0060] Furthermore, the light-emitting element ED according to an exemplary embodiment of the present invention may include a first charge generation layer 160 and a second charge generation layer 165, wherein the first charge generation layer 160 is an n-type charge generation layer located between the first light-emitting unit ST1 and the second light-emitting unit ST2, and the second charge generation layer 165 is a p-type charge generation layer.

[0061] The first electrode E1 is located in each of the first sub-pixel SP1, the second sub-pixel SP2, and the third sub-pixel SP3, and may include a transparent conductive layer and a reflective layer. For example, the display device may include a transparent conductive material layer with a high work function (such as indium tin oxide (ITO)) and a reflective layer (such as silver (Ag) or a silver alloy (Ag alloy)).

[0062] Hole injection layer 120 is located on the first electrode E1 to correspond to all the first sub-pixels SP1, second sub-pixels SP2 and third sub-pixels SP3.

[0063] Hole injection layer 120 can be used to promote hole injection and can be any one or more of the group consisting of HATCN (1,4,5,8,9,11-hexaazatriphenyl-hexanediamine) and CuPc (copper phthalocyanine), PEDOT (poly(3,4)-ethylenedioxythiophene), PANI (polyaniline) and NPD (N,N-dinaphthyl-N,N'-diphenylbenzidine), but is not limited thereto.

[0064] The first hole transport layer 130 and the second hole transport layer 170 are configured to correspond to the first sub-pixel SP1, the second sub-pixel SP2, and the third sub-pixel SP3, respectively. The first hole transport layer 130 is located on the hole injection layer 120, and the second hole transport layer 170 is located on the second charge generation layer 165.

[0065] The first hole transport layer 130 and the second hole transport layer 170 are used to facilitate hole transport and may be formed by any one or more of the following groups: NPD (N,N-dinaphthyl-N,N'-diphenylbenzidine), TPD (N,N'-bis-(3-methylphenyl)-N,N'-bis-(phenyl)-benzidine), s-TAD, and MTDATA (4,4',4-tris(N-3-methylphenyl-N-phenyl-amino)-triphenylamine), but are not limited thereto.

[0066] The 1-1 light-emitting layer 141, the 2-1 light-emitting layer 181, the 1-2 light-emitting layer 142, the 2-2 light-emitting layer 182, the 1-3 light-emitting layer 143, and the 2-3 light-emitting layer 183 are located in the first sub-pixel SP1, the second sub-pixel SP2, and the third sub-pixel SP3, respectively.

[0067] Each of 1-1 emitting layer 141 and 2-1 emitting layer 181 may include a luminescent material that emits red light, and the luminescent material may include a phosphorescent material or a fluorescent material. For example, 1-1 emitting layer 141 and 2-1 emitting layer 181 each include a matrix material comprising CBP (carbazole biphenyl) or mCP (1,3-bis(carbazole-9-yl)). 1-1 emitting layer 141 and 2-1 emitting layer 181 may be made of a phosphorescent material comprising a dopant selected from the group consisting of PIQIr(acac) (bis(1-phenylisoquinoline)acetylacetone iridium), PQIr(acac) (bis(1-phenylquinoline)acetylacetone iridium), PQIr (tris(1-phenylquinoline)iridium), and PtOEP (octaethylporphyrin platinum). Optionally, 1-1 emitting layer 141 and 2-1 emitting layer 181 may be made of a fluorescent material comprising PBD:Eu(DBM)3 (benzene) or perylene. However, the present invention is not limited thereto.

[0068] Each of the 1-2 luminescent layers 142 and 2-2 luminescent layers 182 may include a luminescent material that emits green light, and the luminescent material may include a phosphorescent material or a fluorescent material. For example, the 1-2 luminescent layers 142 and 2-2 luminescent layers 182 each include a matrix material having CBP or mCP, and may be formed of a phosphorescent material including dopant materials such as Ir complexes (including Ir(ppy)3(fac 3(2-phenylpyridine)iridium)), or conversely, may be formed of a fluorescent material including Alq3 (tris(8-hydroxyquinoline)aluminum), but is not limited thereto.

[0069] Furthermore, each of the 1-3 emitting layers 143 and the 2-3 emitting layers 183 may include a luminescent material that emits blue light, and the luminescent material may include a phosphorescent material or a fluorescent material. For example, each of the 1-3 emitting layers 143 and the 2-3 emitting layers 183 includes a matrix material having CBP or mCP, and may be made of a phosphorescent material including a dopant material (which includes (4,6-F2ppy)2Ir(pic)). Alternatively, it may be made of a fluorescent material, wherein the fluorescent material includes, but is not limited to, any one of the following groups: spiro-DPVBi, spiro-6P, stilbene (DSB), stilbene arylene (DSA), PFO-based polymers, and PPV-based polymers.

[0070] At this time, in order to match the optical distance required for light emission from each of the first light-emitting unit ST1 and the second light-emitting unit ST2 in the first sub-pixel SP1, the second sub-pixel SP2 and the third sub-pixel SP3, the thickness or height of each of the 1-1 light-emitting layer 141, 1-2 light-emitting layer 142 and 1-3 light-emitting layer 143 in the first organic light-emitting layer 140 may be different from the thickness or height of each of the 2-1 light-emitting layer 181, 2-2 light-emitting layer 182 and 2-3 light-emitting layer 183 in the second organic light-emitting layer 180.

[0071] The first electron transport layer 150 is located on the first organic light-emitting layer 140, and the second electron transport layer 190 is located on the second organic light-emitting layer 180.

[0072] The first electron transport layer 150 and the second electron transport layer 190 can be used to transport and inject electrons, and the thicknesses of the first electron transport layer 150 and the second electron transport layer 190 can be adjusted taking into account electron transport characteristics. Furthermore, if desired, an electron injection layer can be selectively included on the second electron transport layer 190.

[0073] The first electron transport layer 150 and the second electron transport layer 190 are used to facilitate electron transport and may be formed by any one or more of the following groups: Alq3 (tris(8-hydroxyquinoline)aluminum), PBD (2-(4-biphenyl)-5-(4-tert-butylphenyl)-1,3,4-oxadiazole), TAZ, spiro-PBD, BAlq and SAlq, but are not limited thereto.

[0074] A first charge generation layer 160 is located on the first electron transport layer 150, and a second charge generation layer 165 is located on the first charge generation layer 160. Furthermore, the first charge generation layer 160 and the second charge generation layer 165 are located between the first light-emitting unit ST1 and the second light-emitting unit ST2. The first charge generation layer 160 and the second charge generation layer 165 are used to adjust the charge balance between the first light-emitting unit ST1 and the second light-emitting unit ST2.

[0075] The first charge generation layer 160 serves as an n-type charge generation layer (n-CGL) that helps inject electrons into the first light-emitting unit ST1, and the second charge generation layer 165 serves as a p-type charge generation layer (p-CGL) that helps inject holes into the second light-emitting unit ST2.

[0076] More specifically, the first charge generation layer 160, which serves as the n-type charge generation layer (n-CGL) for electron injection, may be formed from an alkali metal, an alkali metal compound, an organic material for electron injection, or a compound thereof.

[0077] Furthermore, the matrix material of the first charge generation layer 160 may be formed of the same material as the first electron transport layer 150 or the second electron transport layer 190. For example, n-type organic materials such as anthracene derivatives may be formed from a mixed layer doped with dopants such as lithium (Li), but are not limited thereto.

[0078] The second charge generation layer 165 is located on the first charge generation layer 160. The second charge generation layer 165 serves as a p-type charge generation layer (p-CGL) for hole injection and may be formed of the same material as the first hole transport layer 130 or the second hole transport layer 170. For example, the second charge generation layer 165 may be formed as a monolayer of a p-type material such as HATCN and F4-TCNQ, but is not limited thereto.

[0079] The second electrode E2 is located on the second electron transport layer 190. For example, the second electrode E2 may be formed of a transparent conductive oxide based on indium tin oxide (ITO), indium zinc oxide (IZO), indium tin zinc oxide (ITZO), zinc oxide (ZnO), and tin oxide (TO) or a ytterbium (Yb) alloy. For example, the second electrode E2 may be made of an alloy of magnesium and silver (Mg:Ag) to have semi-transmissive properties. That is, light emitted from the first organic light-emitting layer 140 and the second organic light-emitting layer 180 is displayed to the outside through the second electrode E2, and because the second electrode E2 has transmissive and reflective properties, some light is guided back to the first electrode E1.

[0080] As described above, due to the microcavity effect of repeated reflections occurring between the second electrode E2 and the first electrode E1, which serve as a reflective layer, light is repeatedly reflected in the cavity between the first electrode E1 and the second electrode E2, thereby improving light efficiency.

[0081] In addition, the first electrode E1 is formed as a transmission electrode and the second electrode E2 is formed as a reflection electrode, so that light from the organic light-emitting layer can be displayed to the outside through the first electrode E1.

[0082] The capping layer CPL is located on the second electrode E2. The capping layer CPL is configured to enhance the light extraction effect of the light-emitting element ED, and can be formed of the same material as the first hole transport layer 130, the second hole transport layer 170, the first electron transport layer 150, the second electron transport layer 190, the first organic light-emitting layer 140, or the second organic light-emitting layer 180. Alternatively, the capping layer CPL can be selectively omitted as needed.

[0083] Figure 4 It is along Figure 2 A cross-sectional view taken from line IV-IV'. Figure 4 For ease of description, only one auxiliary electrode AE ​​and one component included in a sub-pixel SP are shown in the active region AA.

[0084] Reference Figure 4 The substrate 110 is a component for supporting various components included in the display device 100 and may be formed of an insulating material. The substrate 110 may include a first substrate 110a, an insulating layer 110b, and a second substrate 110c. The insulating layer 110b may be disposed between the first substrate 110a and the second substrate 110c. As described above, the substrate 110 is composed of the first substrate 110a, the second substrate 110c, and the insulating layer 110b to suppress moisture penetration. For example, the first substrate 110a and the second substrate 110c may be polyimide (PI) substrates.

[0085] A light-shielding layer LS is disposed in each of the plurality of sub-pixels on the substrate 110. The light-shielding layer LS blocks light incident from the bottom of the substrate 110 onto the active layer ACT of the driving transistor DT, which is described below. Light incident onto the active layer ACT of the driving transistor DT is blocked by the light-shielding layer LS to minimize leakage current.

[0086] A buffer layer 111 is disposed on the substrate 110 and the light shielding layer LS. The buffer layer 111 reduces the penetration of moisture or impurities through the substrate 110. For example, the buffer layer 111 may be configured as a single layer or multiple layers made of silicon oxide (SiOx) or silicon nitride (SiNx), but is not limited thereto. However, depending on the type of substrate 110 or the type of transistor, the buffer layer 111 may be omitted, but is not limited thereto.

[0087] A driving transistor DT is disposed on the buffer layer 111 for each of the multiple sub-pixels SP. The driving transistor DT is a transistor used to control the driving current supplied to the light-emitting element ED.

[0088] The driving transistor DT includes an active layer ACT, a gate GE, a source SE, and a drain DE.

[0089] The active layer ACT for driving the transistor DT can be disposed on the buffer layer 111. For example, the active layer ACT can be formed of polycrystalline silicon (p-Si), amorphous silicon (a-Si), or oxide semiconductor, but is not limited thereto.

[0090] The gate insulating layer 112 may be disposed on the active layer ACT. The gate insulating layer 112 is an insulating layer that insulates the active layer ACT from the gate GE, and may be formed of silicon oxide (SiOx), silicon nitride (SiNx), or a double layer thereof.

[0091] Furthermore, the gate GE of the driving transistor DT can be disposed on the gate insulating layer 112. The gate GE is disposed on the gate insulating layer 112 and overlaps with the active layer ACT. The gate GE can be formed of various conductive materials such as magnesium (Mg), aluminum (Al), nickel (Ni), chromium (Cr), molybdenum (Mo), tungsten (W), gold (Au), or alloys thereof, but is not limited thereto.

[0092] Interlayer insulating layer 113 may be configured to cover gate GE. Interlayer insulating layer 113 is an insulating layer that protects the components located below interlayer insulating layer 113, and may be composed of a single layer or a double layer of silicon oxide (SiOx) or silicon nitride (SiNx), but is not limited thereto.

[0093] The source SE and drain DE of the driving transistor DT can be disposed on the interlayer insulating layer 113.

[0094] The source (SE) and drain (DE) electrodes can be connected to one side and the other side of the active layer (ACT) respectively through contact holes provided in the interlayer insulating layer (113) and the gate insulating layer (112). The source (SE) and drain (DE) electrodes can be formed of various conductive materials such as magnesium (Mg), aluminum (Al), nickel (Ni), chromium (Cr), molybdenum (Mo), tungsten (W), gold (Au), or alloys thereof, but are not limited thereto.

[0095] The portion of the active layer ACT that overlaps with the gate GE is the channel region. One of the source SE and drain DE is connected to one side of the channel region in the active layer ACT, and the other is connected to the other side of the channel region in the active layer ACT.

[0096] Passivation layer 114 may be disposed on the source SE and drain DE. Passivation layer 114 is configured to protect drive transistor DT and may be formed of inorganic layer (e.g., silicon oxide (SiOx), silicon nitride (SiNx) or a bilayer thereof).

[0097] A first planarization layer 115a may be disposed on the passivation layer 114. The first planarization layer 115a may protect the driving transistor DT and planarize the upper part of the driving transistor DT. The first planarization layer 115a may be composed of a single layer or two layers, and may be formed, for example, by a photoresist or an acrylic organic material, but is not limited thereto.

[0098] The connecting electrode CE can be disposed on the first planarization layer 115a.

[0099] The connecting electrode CE can be connected to one of the source electrode SE and the drain electrode DE through a contact hole provided in the first planarization layer 115a.

[0100] Multiple low-potential power lines VSS are disposed on the first planarization layer 115a. For example, the multiple low-potential power lines VSS may be formed of an opaque conductive material (such as titanium (Ti), gold (Au), silver (Ag), copper (Cu), molybdenum (Mo), aluminum (Al) or alloys thereof), a conductive material (such as indium tin oxide (ITO)) or a stacked structure thereof, but are not limited thereto.

[0101] The second planarization layer 115b may be disposed on the connecting electrode CE and multiple low-potential power lines VSS. The second planarization layer 115b may be made of the same material as the first planarization layer 115a.

[0102] The light-emitting element ED can be located on the second planarization layer 115b.

[0103] The stacked structure of the light-emitting element (ED) will be described in detail below.

[0104] The first electrode E1 may be disposed on the second planarization layer 115b. In this case, the first electrode E1 may be electrically connected to the connecting electrode CE through a contact hole disposed in the second planarization layer 115b. The first electrode E1 may be formed of a metallic material.

[0105] When the display device 100 is a top-emitting type (where light emitted from the light-emitting element ED is emitted above the substrate 110 on which the light-emitting element ED is disposed), the first electrode E1 may include a first transparent conductive layer CL1, a reflective layer RL on the first transparent conductive layer CL1, and a second transparent conductive layer CL2 on the reflective layer RL. The first transparent conductive layer CL1 and the second transparent conductive layer CL2 may be formed of a transparent conductive oxide (such as ITO or IZO), and the reflective layer RL may be formed of, for example, silver (Ag), aluminum (Al), gold (Au), molybdenum (Mo), tungsten (W), chromium (Cr), or alloys thereof.

[0106] An auxiliary electrode AE ​​may be disposed on the second planarization layer 115b and spaced apart from the first electrode E1. Multiple auxiliary electrodes AE may be disposed between multiple first electrodes E1. In this case, the auxiliary electrodes AE can be electrically connected to a low-potential power line VSS through contact holes disposed in the second planarization layer 115b. The auxiliary electrodes AE may be formed of the same material as the first electrodes AE.

[0107] At least a portion of the auxiliary electrode AE ​​may include a first hole H1 exposing the upper surface of the second planarization layer 115b. A dam 116 may be provided while covering the end of the first electrode E1 and may define a light-emitting area. A portion of the dam 116 corresponding to the light-emitting area of ​​the sub-pixel SP may be open. A portion of the first electrode E1 may be exposed through the open portion of the dam 116 (hereinafter referred to as the open area). In this case, the dam 116 may be made of an inorganic insulating material (such as silicon nitride (SiNx) or silicon oxide (SiOx)) or an organic insulating material (such as benzocyclobutene resin, acrylic resin, or imide resin), but is not limited thereto.

[0108] In addition, the embankment 116 may include a first opening OP1 that overlaps with the first hole H1 and exposes a portion of the upper surface and a portion of the side surface of the auxiliary electrode AE.

[0109] An organic layer EL can be disposed on the embankment 116. Therefore, the organic layer EL can be disposed on the first electrode E1 exposed through the opening region of the embankment 116. The organic layer EL can be disposed on multiple auxiliary electrodes AE. Furthermore, the organic layer EL can be disposed on the second planarization layer 115b exposed through the first opening OP1 of the embankment 116 and the first hole H1 of the auxiliary electrodes AE.

[0110] The second electrode E2 can be disposed on the organic layer EL.

[0111] The light-emitting element (ED) can be formed from a first electrode E1, an organic layer EL, and a second electrode E2. The organic layer EL may include multiple layers of organic material. This will be referred to below. Figure 5 and 6 Detailed description.

[0112] The package 117 may be located on the light-emitting element ED.

[0113] The encapsulation portion 117 may have a single-layer structure or a multi-layer structure. For example, the encapsulation portion 117 may include a first encapsulation layer 117a, a second encapsulation layer 117b, and a third encapsulation layer 117c.

[0114] In this configuration, the first encapsulation layer 117a and the third encapsulation layer 117c may be configured as inorganic layers, and the second encapsulation layer 117b may be configured as an organic layer. Among the first encapsulation layer 117a, the second encapsulation layer 117b, and the third encapsulation layer 117c, the second encapsulation layer 117b is the thickest and can be used as a planarization layer.

[0115] The first encapsulation layer 117a is disposed on the second electrode E2 and may be positioned adjacent to the light-emitting element ED. The first encapsulation layer 117a may be formed of an inorganic insulating material on which low-temperature deposition can be performed. For example, the first encapsulation layer 117a may be made of silicon nitride (SiNx), silicon oxide (SiOx), silicon nitride oxide (SiON), or aluminum oxide (Al2O3). Because the first encapsulation layer 117a is deposited in a low-temperature atmosphere, damage to the organic layer EL, which includes organic materials susceptible to high-temperature atmospheres, can be prevented during the deposition process.

[0116] The second encapsulation layer 117b can be formed to have an area smaller than that of the first encapsulation layer 117a. In this case, the second encapsulation layer 117b can be formed to expose both ends of the first encapsulation layer 117a. The second encapsulation layer 117b can be used to reduce stress between layers and enhance planarization performance.

[0117] For example, the second encapsulation layer 117b may be made of organic insulating materials such as acrylic resin, epoxy resin, polyimide, polyethylene, or silicon dioxide (SiOC). For instance, the second encapsulation layer 117b may be formed by inkjet printing, but is not limited thereto.

[0118] A third encapsulation layer 117c may be formed above a substrate 110 on which a second encapsulation layer 117b is formed, so as to cover the upper and side surfaces of the second encapsulation layer 117b and the first encapsulation layer 117a. In this case, the third encapsulation layer 117c can minimize or block external moisture or oxygen from penetrating into the first encapsulation layer 117a and the second encapsulation layer 117b. For example, the third encapsulation layer 117c may be made of an inorganic insulating material such as silicon nitride (SiNx), silicon oxide (SiOx), silicon nitride oxide (SiON), or aluminum oxide (Al2O3).

[0119] The touch sensing unit can be disposed on the aforementioned package 117.

[0120] Specifically, the touch sensing unit may include a touch buffer layer 118a disposed on the package portion 117, a bridging electrode BE disposed on the touch buffer layer 118a, a touch interlayer insulating layer 118b disposed on the touch buffer layer 118a and the bridging electrode BE, and a plurality of touch electrodes TE disposed on the touch interlayer insulating layer 118b.

[0121] The touch buffer layer 118a can prevent chemical solutions (such as developer or etching solutions) or external moisture or impurities used in the manufacturing process of the touch electrodes formed on the touch buffer layer 118a from penetrating into the light-emitting element.

[0122] The plurality of touch electrodes TE may include a plurality of first touch electrodes extending in a first direction and a plurality of second touch electrodes extending in a second direction intersecting the first direction.

[0123] For example, multiple first touch electrodes and multiple second touch electrodes can be disposed on the same layer. However, in the area where the multiple first touch electrodes and multiple second touch electrodes intersect, the multiple second touch electrodes can be disposed separately, and the multiple separate second touch electrodes can be connected by a bridging electrode BE. An interlayer insulating layer 118b can be disposed between the multiple second touch electrodes and the bridging electrode BE.

[0124] The protective layer 119 can be configured to cover the touch sensing unit. The protective layer 119 can be formed of an organic insulating layer. The protective layer 119 can prevent steps on the top layer of the display device 100, thereby improving the visibility of the display device 100.

[0125] A polarizing layer (POL) can be disposed on the protective layer 119. The polarizing layer (POL) is a layer used to polarize incident light and is a film with a predetermined level of light transmittance to absorb external light and its reflected light, thereby preventing contrast reduction. Specifically, the display panel PN comprises various metallic materials coated onto semiconductor devices, wiring, organic light-emitting devices, etc. Therefore, external light incident on the display panel PN can be reflected from the metallic materials, and the visibility of the display device 100 can be reduced due to the reflection of external light. Therefore, the polarizing layer (POL) is disposed to suppress the reflection of external light, thereby increasing the outdoor visibility of the display device 100.

[0126] Figure 5 yes Figure 4 A magnified plan view of region B. Figure 6 This is a schematic cross-sectional view of a sub-pixel of a display device according to an exemplary embodiment of the present invention. Figure 5 and 6 In the diagram, for ease of description, the organic layer EL and the components above the organic layer EL are shown in the region overlapping with the auxiliary electrode AE.

[0127] Reference Figure 5 and 6 The organic layer EL overlapping with the auxiliary electrode AE ​​may include a hole injection layer 120, a first hole transport layer 130, a first electron transport layer 150, a first charge generation layer 160, a second charge generation layer 165, a second hole transport layer 170, and a second electron transport layer 190.

[0128] In this case, the first hole H1 that exposes the upper surface of the second planarization layer 115b may be included in at least a portion of the auxiliary electrode AE.

[0129] The first aperture H1 can be formed by irradiating at least a portion of the auxiliary electrode AE ​​with a laser beam after the auxiliary electrode AE ​​has been formed. For example, the auxiliary electrode AE ​​is formed on the second planarization layer 115b, and then a hole injection layer 120 and a first hole transport layer 130 are formed. Next, the first aperture H1 is formed in the auxiliary electrode AE, the hole injection layer 120, and the first hole transport layer 130 using a laser. Following this, a first electron transport layer 150, a first charge generation layer 160, a second charge generation layer 165, a second hole transport layer 170, and a second electron transport layer 190 can be formed.

[0130] When a first hole H1 is formed in at least a portion of the auxiliary electrode AE ​​using a laser, the side surface of the auxiliary electrode AE ​​can have a gently tapered shape. Furthermore, by forming the first hole H1 in at least a portion of the auxiliary electrode AE ​​using a laser, an offset can be formed between the auxiliary electrode AE ​​and the hole injection layer 120 and the first hole transport layer 130 disposed above the auxiliary electrode AE.

[0131] In the first hole H1 or on the upper surface of the second planarization layer 115b in the first hole H1, only the first electron transport layer 150, the first charge generation layer 160, the second charge generation layer 165, the second hole transport layer 170 and the second electron transport layer 190 of the organic layer EL can be provided.

[0132] Reference Figure 6 The thickness D1 of the organic layer EL disposed on the upper surface of the auxiliary electrode AE ​​can be greater than the thickness D2 of the organic layer EL disposed in the first hole H1.

[0133] In the first aperture H1, multiple auxiliary electrodes AE can contact the first electron transport layer 150 and can be electrically connected to the first charge generation layer 160 and the second charge generation layer 165 through the first electron transport layer 150. Therefore, the auxiliary electrodes AE can be electrically connected to the first charge generation layer 160 and the second charge generation layer 165, which have high conductivity. Furthermore, the low-potential power line VSS electrically connected to the auxiliary electrodes AE can also be electrically connected to the first charge generation layer 160 and the second charge generation layer 165.

[0134] Figure 7 This is a circuit diagram of a sub-pixel of a display device according to an exemplary embodiment of the present invention. Figure 7 This is a circuit diagram showing the current path between the second sub-pixel SP2 and the third sub-pixel SP3, which are adjacent to each other among multiple sub-pixels SP.

[0135] Specifically, the light-emitting element SP2_ED of the second sub-pixel may have a structure including a first light-emitting unit comprising 1-2 light-emitting layers 142 and a second light-emitting unit comprising 2-2 light-emitting layers 182 stacked together.

[0136] The light-emitting element SP3_ED of the third sub-pixel may have a structure including a first light-emitting unit comprising 1-3 light-emitting layers 143 and a second light-emitting unit comprising 2-3 light-emitting layers 183 stacked together.

[0137] For example, the first driving transistor DT1 may be electrically connected to the light-emitting element SP3_ED of the third sub-pixel, and the second driving transistor DT2 may be electrically connected to the light-emitting element SP2_ED of the second sub-pixel.

[0138] In this case, the first driving transistor DT1 and the second driving transistor DT2 can be operated to flow driving current between the high-potential power line VDD and the low-potential power line VSS.

[0139] For example, the driving current flowing between the high-potential power line VDD and the low-potential power line VSS through the first driving transistor DT1 can flow to the low-potential power line VSS through the light-emitting element SP3_ED of the third sub-pixel, that is, through the first light-emitting unit including 1-3 light-emitting layers 143 and through the second light-emitting unit including 2-3 light-emitting layers 183.

[0140] A display device 100 according to an exemplary embodiment of the present invention may include a plurality of auxiliary lines AE disposed between adjacent pixels.

[0141] For example, the auxiliary line AE may be included between the light-emitting element SP3_ED of the third sub-pixel and the light-emitting element SP2_ED of the second sub-pixel.

[0142] Therefore, even if some of the driving current flowing between the high-potential power line VDD, the light-emitting element SP3_ED of the third sub-pixel, and the low-potential power line VSS flows in the direction toward the adjacent multiple sub-pixels (i.e., the light-emitting element SP2_ED of the second sub-pixel), the flow of the driving current is also altered by the auxiliary electrode AE ​​to be induced to the low-potential power line VSS.

[0143] Typically, in the case of a single-emitting-unit structure that includes one organic light-emitting layer as the organic layer of a display device, there is a problem: compared with a multi-emitting-unit structure that includes multiple organic light-emitting layers as organic layers, the luminous efficiency and power consumption are reduced. To overcome this, when a multi-emitting-unit structure including multiple organic light-emitting layers is used as the organic layer, the luminous efficiency and power consumption are improved, but the following problem exists: leakage current is generated between multiple adjacent sub-pixels.

[0144] Therefore, in the display device 100 according to an exemplary embodiment of the present invention, an auxiliary electrode AE ​​including a first aperture H1 is disposed in a sub-pixel SP, and a first charge generation layer 160 and a second charge generation layer 165 having high conductivity are electrically connected to the auxiliary electrode AE ​​in the first aperture H1. Therefore, leakage current flowing between a plurality of adjacent sub-pixels SP can be induced to the auxiliary electrode AE ​​and the low-potential power line VSS electrically connected to the auxiliary electrode AE ​​through the first charge generation layer 160 and the second charge generation layer 165 in the first aperture H1. Therefore, the display device 100 according to the exemplary embodiment of the present invention not only achieves high efficiency and low power consumption, but also blocks leakage current between a plurality of adjacent sub-pixels SP. Furthermore, process costs can be reduced by improving the leakage current problem without the need for additional processes using exposure masks.

[0145] Figure 8 This is a schematic cross-sectional view of a display device according to another embodiment of the present invention. Except for the organic layer EL in the region overlapping with the auxiliary electrode AE, Figure 8 The display device 200 has a similar Figures 1 to 7 The display device 100 has a basically the same structure, so redundant descriptions will be omitted.

[0146] Reference Figure 8 In a display device 200 according to another exemplary embodiment of the present invention, the organic layer EL overlapping with the auxiliary electrode AE ​​may include a hole injection layer 120, a first hole transport layer 130, a first electron transport layer 150, a first charge generation layer 160, a second charge generation layer 165, a second hole transport layer 170, and a second electron transport layer 190.

[0147] In this scenario, the first hole H1, exposing the upper surface of the second planarization layer 115b, may be included in at least a portion of the auxiliary electrode AE. The first hole H1 can be formed by irradiating with a laser after the auxiliary electrode AE ​​has been formed. For example, the auxiliary electrode AE ​​is formed on the second planarization layer 115b. Subsequently, the first hole H1 is formed in at least a portion of the auxiliary electrode AE ​​using a laser. Afterward, a hole injection layer 120, a first hole transport layer 130, a first charge generation layer 160, a second charge generation layer 165, a second hole transport layer 170, and a second electron transport layer 190 may be formed. However, the order in which the first hole H1 is formed in at least a portion of the auxiliary electrode AE ​​is not limited, as long as it is formed before the first charge generation layer 160. For example, the auxiliary electrode AE ​​may be formed, followed by the hole injection layer 120, the first hole transport layer 130, and the first electron transport layer 150, and then the first hole H1 may be formed using a laser. In this scenario, the auxiliary electrode AE ​​may be in direct contact with the first charge generation layer 160 to be electrically connected.

[0148] In a display device 200 according to another exemplary embodiment of the present invention, the thickness D1 of the organic layer EL disposed on the upper surface of the auxiliary electrode AE ​​may be equal to the thickness D3 of the organic layer EL disposed in the first hole H1.

[0149] The organic layer EL disposed in the first hole H1 can include, in the same manner as the upper surface of the auxiliary electrode AE, a hole injection layer 120, a first hole transport layer 130, a first electron transport layer 150, a first charge generation layer 160, a second charge generation layer 165, a second hole transport layer 170, and a second electron transport layer 190.

[0150] In the first hole H1 or on the upper surface of the second planarization layer 115b in the first hole H1, only the hole injection layer 120, the first hole transport layer 130, the first electron transport layer 150, the first charge generation layer 160, the second charge generation layer 165, the second hole transport layer 170, and the second electron transport layer 190 of the organic layer EL can be formed. Multiple auxiliary electrodes AE can contact the hole injection layer 120 and be electrically connected to the first charge generation layer 160 and the second charge generation layer 165 through the hole injection layer 120. Therefore, the auxiliary electrodes AE can be electrically connected to the first charge generation layer 160 and the second charge generation layer 165, which have high conductivity. Furthermore, the low-potential power line VSS electrically connected to the auxiliary electrodes AE can also be electrically connected to the first charge generation layer 160 and the second charge generation layer 165.

[0151] In a display device 200 according to another exemplary embodiment of the present invention, an auxiliary electrode AE ​​including a first aperture H1 is disposed in a sub-pixel SP, and a first charge generation layer 160 and a second charge generation layer 165 having high conductivity are electrically connected to the auxiliary electrode AE ​​in the first aperture H1. Therefore, leakage current flowing between a plurality of adjacent sub-pixels SP can be induced to the auxiliary electrode AE ​​and the low-potential power line VSS electrically connected to the auxiliary electrode AE ​​through the first charge generation layer 160 and the second charge generation layer 165 in the first aperture H1. Therefore, the display device 200 according to another exemplary embodiment of the present invention not only achieves high efficiency and low power consumption, but also blocks leakage current between a plurality of adjacent sub-pixels SP.

[0152] Figure 9 This is a schematic cross-sectional view of a display device according to yet another exemplary embodiment of the present invention. Apart from the shape of the auxiliary electrode AE, Figure 9 The display device 300 is configured with Figures 1 to 8 The display devices 100 and 200 are essentially the same. Therefore, repeated descriptions of the same components will be omitted.

[0153] In a display device 300 according to another exemplary embodiment of the present invention, a plurality of auxiliary electrodes AE are disposed on a second planarization layer 115b. The plurality of auxiliary electrodes AE may include a first transparent conductive layer CL1, a reflective layer RL located on the first transparent conductive layer CL1, and a second transparent conductive layer CL2 located on the reflective layer RL. For example, each of the first transparent conductive layer CL1 and the second transparent conductive layer CL2 may be made of a transparent conductive oxide such as ITO or IZO, and the reflective layer RL may be made of silver (Ag), aluminum (Al), gold (Au), molybdenum (Mo), tungsten (W), chromium (Cr), or alloys thereof.

[0154] At least a portion of the plurality of auxiliary electrodes AE may include a second hole H2 that exposes a portion of the upper surface of the reflective layer RL and a portion of the side surface of the second transparent conductive layer CL2.

[0155] Furthermore, the embankment 116 on top of the plurality of auxiliary electrodes AE may include a second opening OP2 that overlaps with the second aperture H2 and exposes a portion of the upper surface of the plurality of reflective layers RL. An organic layer EL may be disposed on the reflective layers RL exposed via the second opening OP2 of the embankment 116.

[0156] The second hole H2 can be formed by irradiating with a laser after the formation of the auxiliary electrode AE. For example, the auxiliary electrode AE ​​is formed on the second planarization layer 115b, followed by the formation of the hole injection layer 120 and the first hole transport layer 130. Then, the second hole H2 is formed in a portion of the auxiliary electrode (e.g., the second transparent conductive layer CL2, the hole injection layer 120, and the first hole transport layer 130) using a laser. Next, the first electron transport layer 150, the first charge generation layer 160, the second charge generation layer 165, the second hole transport layer 170, and the second electron transport layer 190 can be formed.

[0157] In a display device 300 according to another exemplary embodiment of the present invention, a second hole H2 is formed by irradiating at least a portion of an auxiliary electrode AE ​​with a laser beam. Therefore, the upper surface of the reflective layer RL and the side surface of the second transparent conductive layer CL2 are exposed in the second hole H2. Thus, when the organic layer EL is disposed on the upper surface of the auxiliary electrode AE, the contact area between the auxiliary electrode AE ​​and the organic layer EL increases, thereby improving the contact resistance.

[0158] Because a second hole H2 is formed in a portion of the second transparent conductive layer CL2 using a laser, the side surface of the second transparent conductive layer CL2 can have a gently tapered shape. Furthermore, because a second hole H2 is formed in the second transparent conductive layer CL2 using a laser, an offset can be created between the second transparent conductive layer CL2 and the hole injection layer 120 and the first hole transport layer 130 disposed above the second transparent conductive layer CL2.

[0159] The organic layer EL overlapping with multiple auxiliary electrodes AE may include a hole injection layer 120, a first hole transport layer 130, a first electron transport layer 150, a first charge generation layer 160, a second charge generation layer 165, a second hole transport layer 170, and a second electron transport layer 190.

[0160] In the second hole H2 or on the reflective layer RL in the second hole H2, only the first electron transport layer 150, the first charge generation layer 160, the second charge generation layer 165, the second hole transport layer 170 and the second electron transport layer 190 of the organic layer EL can be provided.

[0161] Reference Figure 9 Compared to the organic layer EL disposed in the second hole H2, the organic layer EL disposed on the upper surface of the auxiliary electrode AE ​​may further include a hole injection layer 120 and a first hole transport layer 130. Therefore, the thickness D1 of the organic layer EL disposed on the upper surface of the auxiliary electrode AE ​​may be greater than the thickness D2 of the organic layer EL disposed in the second hole H2.

[0162] In the second aperture H2, multiple auxiliary electrodes AE are in contact with the first electron transport layer 150. In this case, since the upper surface of the reflective layer RL and the side surface of the second transparent conductive layer CL2 are exposed in the second aperture H2, the contact area between the organic layer EL and the auxiliary electrodes AE (i.e., the first electron transport layer 150) can be increased. The auxiliary electrodes AE can be electrically connected to the first charge generation layer 160 and the second charge generation layer 165 through the first electron transport layer 150. Therefore, the auxiliary electrodes AE can be electrically connected to the first charge generation layer 160 and the second charge generation layer 165, which have high conductivity. Furthermore, the low-potential power line VSS electrically connected to the auxiliary electrodes AE can also be electrically connected to the first charge generation layer 160 and the second charge generation layer 165.

[0163] In a display device 300 according to another exemplary embodiment of the present invention, an auxiliary electrode AE ​​is disposed in a sub-pixel SP, and a second hole H2 is formed to expose a portion of the auxiliary electrode AE, for example, a portion of the upper surface of the reflective layer RL and a portion of the side surface of the second transparent conductive layer CL2. A first charge generation layer 160 and a second charge generation layer 165 having high conductivity are electrically connected to the auxiliary electrode AE ​​in the second hole H2. Therefore, leakage current flowing between a plurality of adjacent sub-pixels SP can be induced to the auxiliary electrode AE ​​and the low-potential power line VSS electrically connected to the auxiliary electrode AE ​​through the first charge generation layer 160 and the second charge generation layer 165 in the second hole H2. Furthermore, the contact resistance is improved due to the increased contact area of ​​the organic layer (e.g., the first electron transport layer 150) used to electrically connect the auxiliary electrode AE ​​to the first charge generation layer 160 and the second charge generation layer 165. Therefore, the display device 300 according to another exemplary embodiment of the present invention not only achieves high efficiency and low power consumption, but also blocks leakage current between a plurality of adjacent sub-pixels SP.

[0164] Figure 10 This is a schematic cross-sectional view of a display device according to yet another exemplary embodiment of the present invention. Apart from the organic layer EL in the region overlapping with the auxiliary electrode AE, Figure 10 The display device 400 has a similar Figure 9 The display device 300 has a basically the same configuration, thus redundant descriptions will be omitted.

[0165] Reference Figure 10 In a display device 400 according to another exemplary embodiment of the present invention, the organic layer EL overlapping with the auxiliary electrode AE ​​may include a hole injection layer 120, a first hole transport layer 130, a first electron transport layer 150, a first charge generation layer 160, a second charge generation layer 165, a second hole transport layer 170, and a second electron transport layer 190.

[0166] In this scenario, the multiple auxiliary electrodes AE may include a first transparent conductive layer CL1, a reflective layer RL on the first transparent conductive layer CL1, and a second transparent conductive layer CL2 on the reflective layer RL. For example, each of the first transparent conductive layer CL1 and the second transparent conductive layer CL2 may be made of a transparent conductive oxide such as ITO or IZO, and the reflective layer RL may be made of silver (Ag), aluminum (Al), gold (Au), molybdenum (Mo), tungsten (W), chromium (Cr), or alloys thereof.

[0167] Multiple auxiliary electrodes AE may include a second hole H2 that exposes a portion of the upper surface of the reflective layer RL and a portion of the side surface of the second transparent conductive layer CL2.

[0168] Furthermore, the embankment 116 on top of the plurality of auxiliary electrodes AE overlaps with the second hole H2, and may include a second opening OP2 exposing a portion of the upper surface of the plurality of reflective layers RL. An organic layer EL may be disposed on the reflective layers RL exposed via the second opening OP2 of the embankment 116.

[0169] The second hole H2 can be formed by irradiating with a laser after the formation of the auxiliary electrode AE. For example, the auxiliary electrode AE ​​is formed on the second planarization layer 115b. Subsequently, the second hole H2 is formed in a portion of the auxiliary electrode (e.g., the second transparent conductive layer CL2) using a laser. Afterward, a hole injection layer 120, a first hole transport layer 130, a first charge generation layer 160, a second charge generation layer 165, a second hole transport layer 170, and a second electron transport layer 190 can be formed. However, the order in which the second hole H2 is formed in at least a portion of the auxiliary electrode AE ​​is not limited, as long as the first charge generation layer 160 is formed before it. For example, the auxiliary electrode AE ​​can be formed, followed by the hole injection layer 120, the first hole transport layer 130, and the first electron transport layer 150, and then the second hole H2 can be formed using a laser. In this case, the auxiliary electrode AE ​​can be in direct contact with the first charge generation layer 160 to be electrically connected.

[0170] In a display device 400 according to another exemplary embodiment of the present invention, a second hole H2 is formed by irradiating a portion of the auxiliary electrode AE ​​with a laser beam. Therefore, the upper surface of the reflective layer RL and the side surface of the second transparent conductive layer CL2 can be exposed through the second hole H2. Thus, when the organic layer EL is disposed on the upper surface of the auxiliary electrode AE, the contact area between the auxiliary electrode AE ​​and the organic layer EL increases, thereby improving the contact resistance.

[0171] The organic layer EL disposed in the second hole H2 can include, in the same manner as the upper surface of the auxiliary electrode AE, a hole injection layer 120, a first hole transport layer 130, a first electron transport layer 150, a first charge generation layer 160, a second charge generation layer 165, a second hole transport layer 170, and a second electron transport layer 190.

[0172] In the second aperture H2 or on the reflective layer RL in the second aperture H2, only the hole injection layer 120, the first hole transport layer 130, the first electron transport layer 150, the first charge generation layer 160, the second charge generation layer 165, the second hole transport layer 170, and the second electron transport layer 190 of the organic layer EL can be provided. Multiple auxiliary electrodes AE are in contact with the hole injection layer 120. In this case, since the upper surface of the reflective layer RL and the side surface of the second transparent conductive layer CL2 are exposed in the second aperture H2, the contact area between the organic layer EL and the auxiliary electrodes AE (i.e., the hole injection layer 120) can be increased. The auxiliary electrodes AE can be electrically connected to the first charge generation layer 160 and the second charge generation layer 165 through the hole injection layer 120. Therefore, the auxiliary electrodes AE can be electrically connected to the first charge generation layer 160 and the second charge generation layer 165, which have high conductivity. Furthermore, the low-potential power line VSS electrically connected to the auxiliary electrodes AE can also be electrically connected to the first charge generation layer 160 and the second charge generation layer 165.

[0173] In a display device 400 according to another exemplary embodiment of the present invention, an auxiliary electrode AE ​​is disposed in a sub-pixel SP, and a second hole H2 is formed to expose a portion of the auxiliary electrode AE, for example, a portion of the upper surface of the reflective layer RL and a portion of the side surface of the second transparent conductive layer CL2. A first charge generation layer 160 and a second charge generation layer 165 having high conductivity are electrically connected to the auxiliary electrode AE ​​in the second hole H2. Therefore, leakage current flowing between a plurality of adjacent sub-pixels SP can be induced to the auxiliary electrode AE ​​and the low-potential power line VSS electrically connected to the auxiliary electrode AE ​​through the first charge generation layer 160 and the second charge generation layer 165 in the second hole H2. Furthermore, the contact resistance is improved due to the increased contact area of ​​the organic layer (e.g., hole injection layer 120) used to electrically connect the auxiliary electrode AE ​​to the first charge generation layer 160 and the second charge generation layer 165. Therefore, the display device 400 according to another exemplary embodiment of the present invention not only achieves high efficiency and low power consumption, but also blocks leakage current between a plurality of adjacent sub-pixels SP.

[0174] Exemplary embodiments of the present invention can also be described as follows:

[0175] According to one aspect of the present invention, a display device includes: a substrate; a planarization layer disposed on the substrate; a plurality of first electrodes disposed on the planarization layer; a plurality of auxiliary electrodes disposed on the planarization layer and spaced apart from the plurality of first electrodes; an organic layer located on the plurality of first electrodes and the plurality of auxiliary electrodes; and a second electrode disposed on the organic layer. A portion of the upper surface and a side surface of the plurality of auxiliary electrodes are in contact with each other with the organic layer.

[0176] The display device may further include multiple power lines disposed between the substrate and the planarization layer. The multiple auxiliary electrodes may be electrically connected to the multiple power lines respectively.

[0177] According to another feature of the invention, at least a portion of the plurality of auxiliary electrodes may include a first hole exposing the upper surface of the planarization layer.

[0178] The display device may further include a dam portion configured to cover the ends of the plurality of first electrodes. The dam portion may include a first opening that overlaps with the first hole and exposes a portion of the upper surface and a portion of the side surface of the plurality of auxiliary electrodes.

[0179] The thickness of the organic layer disposed on the upper surface of the plurality of auxiliary electrodes may be greater than or equal to the thickness of the organic layer disposed in the first hole.

[0180] According to another feature of the present invention, the organic layer may include: a first light-emitting unit, the first light-emitting unit including a hole injection layer, a first hole transport layer and a first electron transport layer; a charge generation layer located on the first light-emitting unit; and a second light-emitting unit, the second light-emitting unit disposed on the charge generation layer and including a second hole transport layer and a second electron transport layer, wherein in the first hole, only the first electron transport layer, the charge generation layer, the second hole transport layer and the second electron transport layer of the organic layer are disposed, and in the first hole, the plurality of auxiliary electrodes may contact the first electron transport layer and be electrically connected to the charge generation layer through the first electron transport layer.

[0181] According to another feature of the present invention, the organic layer may include: a first light-emitting unit, the first light-emitting unit including a hole injection layer, a first hole transport layer and a first electron transport layer; a charge generation layer on the first light-emitting unit; and a second light-emitting unit, the second light-emitting unit disposed on the charge generation layer and including a second hole transport layer and a second electron transport layer, wherein in the first hole, only the hole injection layer, the first hole transport layer, the first electron transport layer, the charge generation layer, the second hole transport layer and the second electron transport layer of the organic layer are disposed, and in the first hole, the plurality of auxiliary electrodes are in contact with the hole injection layer and can be electrically connected to the charge generation layer through the hole injection layer.

[0182] The plurality of auxiliary electrodes may include: a first transparent conductive layer; a reflective layer on the first transparent conductive layer; and a second transparent conductive layer on the reflective layer, and at least a portion of the plurality of auxiliary electrodes may include a second hole exposing a portion of the upper surface of the reflective layer.

[0183] The display device may further include a dam configured to cover the ends of the plurality of first electrodes and define a light-emitting area, the dam including a second opening that overlaps with the second hole and exposes a portion of the upper surface of the plurality of reflective layers.

[0184] According to another feature of the present invention, the organic layer may include: a first light-emitting unit, the first light-emitting unit including a hole injection layer, a first hole transport layer and a first electron transport layer; a charge generation layer on the first light-emitting unit; and a second light-emitting unit, the second light-emitting unit disposed on the charge generation layer and including a second hole transport layer and a second electron transport layer, wherein in the second hole, only the first electron transport layer, the charge generation layer, the second hole transport layer and the second electron transport layer of the organic layer are disposed, and in the second hole, the plurality of auxiliary electrodes may contact the first electron transport layer and be electrically connected to the charge generation layer through the first electron transport layer.

[0185] According to another feature of the present invention, the organic layer may include: a first light-emitting unit, the first light-emitting unit including a hole injection layer, a first hole transport layer and a first electron transport layer; a charge generation layer on the first light-emitting unit; and a second light-emitting unit, the second light-emitting unit disposed on the charge generation layer and including a second hole transport layer and a second electron transport layer, wherein in the second hole, only the hole injection layer, the first hole transport layer, the first electron transport layer, the charge generation layer, the second hole transport layer and the second electron transport layer of the organic layer are disposed, and in the second hole, the plurality of auxiliary electrodes may contact the hole injection layer and be electrically connected to the charge generation layer through the hole injection layer.

[0186] A display device according to another exemplary embodiment of the present invention includes: a substrate defining a plurality of sub-pixels; a plurality of transistors disposed on the substrate; a plurality of power lines disposed on the substrate; a planarization layer disposed on the plurality of transistors and the plurality of power lines; a plurality of first electrodes disposed on the planarization layer in each of the plurality of sub-pixels and electrically connected to the plurality of transistors; a plurality of auxiliary electrodes disposed between the plurality of first electrodes on the planarization layer and electrically connected to the plurality of power lines; an organic layer disposed on the plurality of first electrodes and the plurality of auxiliary electrodes; and a second electrode disposed on the organic layer, wherein a portion of the upper surface and a side surface of the plurality of auxiliary electrodes are in contact with the organic layer.

[0187] According to another feature of the invention, at least a portion of the plurality of auxiliary electrodes may include a first hole exposing a portion of the upper surface of the planarization layer.

[0188] According to another feature of the invention, the thickness of the organic layer disposed on the plurality of auxiliary electrodes may be greater than or equal to the thickness of the organic layer disposed on the upper surface of the planarization layer in the first hole.

[0189] The organic layer disposed on the plurality of auxiliary electrodes may include a hole injection layer, a first hole transport layer, a first electron transport layer, a charge generation layer, a second hole transport layer, and a second electron transport layer, and the organic layer disposed on the upper surface of the planarization layer in the first hole may include the first electron transport layer, the charge generation layer, the second hole transport layer, and the second electron transport layer.

[0190] The organic layer disposed on the plurality of auxiliary electrodes may include a hole injection layer, a first hole transport layer, a first electron transport layer, a charge generation layer, a second hole transport layer, and a second electron transport layer, and the organic layer disposed on the upper surface of the planarization layer in the first hole may include the hole injection layer, the first hole transport layer, the first electron transport layer, the charge generation layer, the second hole transport layer, and the second electron transport layer.

[0191] According to another feature of the invention, the plurality of auxiliary electrodes may include: a first transparent conductive layer; a reflective layer on the first transparent conductive layer; and a second transparent conductive layer on the reflective layer, and at least a portion of the plurality of auxiliary electrodes may include a second hole exposing a portion of the reflective layer.

[0192] According to another feature of the present invention, the thickness of the organic layer disposed on the first transparent conductive layer may be greater than or equal to the thickness of the organic layer disposed on the reflective layer in the second hole.

[0193] The organic layer disposed on the first transparent conductive layer may include a hole injection layer, a first hole transport layer, a first electron transport layer, a charge generation layer, a second hole transport layer, and a second electron transport layer, and the organic layer disposed on the reflective layer in the second hole may include the first electron transport layer, the charge generation layer, the second hole transport layer, and the second electron transport layer.

[0194] The organic layer disposed on the first transparent conductive layer may include a hole injection layer, a first hole transport layer, a first electron transport layer, a charge generation layer, a second hole transport layer, and a second electron transport layer, and the organic layer disposed on the reflective layer in the second hole may include the hole injection layer, the first hole transport layer, the first electron transport layer, the charge generation layer, the second hole transport layer, and the second electron transport layer.

[0195] Although exemplary embodiments of the present invention have been described in detail with reference to the accompanying drawings, the present invention is not limited thereto and may be implemented in various forms without departing from the technical concept of the present invention. Therefore, the exemplary embodiments of the present invention are provided for illustrative purposes only and are not intended to limit the technical concept of the present invention. The scope of the technical concept of the present invention is not limited thereto. Therefore, it should be understood that the above embodiments are exemplary in all respects and do not limit the present invention. All technical concepts within the equivalent scope of the present invention should be interpreted as falling within the scope of the present invention.

Claims

1. A display device, comprising: substrate; A planarization layer disposed on the substrate; Multiple first electrodes are disposed on the planarization layer; Multiple auxiliary electrodes are disposed on the planarization layer and spaced apart from the multiple first electrodes; Organic layers located on the plurality of first electrodes and the plurality of auxiliary electrodes; as well as The second electrode is disposed on the organic layer. A portion of the upper surface and the side surface of the plurality of auxiliary electrodes are in contact with each other in the organic layer.

2. The display device according to claim 1, further comprising: Multiple power lines are disposed between the substrate and the planarization layer. The plurality of auxiliary electrodes are electrically connected to the plurality of power lines respectively.

3. The display device of claim 2, wherein at least a portion of the plurality of auxiliary electrodes includes a first hole exposing the upper surface of the planarization layer.

4. The display device according to claim 3, further comprising: A dam portion, wherein the dam portion is configured to cover the ends of the plurality of first electrodes, The embankment includes a first opening that overlaps with the first hole and exposes a portion of the upper surface and a portion of the side surface of the plurality of auxiliary electrodes.

5. The display device according to claim 4, wherein the thickness of the organic layer disposed on the upper surface of the plurality of auxiliary electrodes is greater than or equal to the thickness of the organic layer disposed in the first hole.

6. The display device according to claim 4, wherein the organic layer comprises: The first light-emitting unit includes a hole injection layer, a first hole transport layer, and a first electron transport layer; The charge generation layer is located on the first light-emitting unit; as well as The second light-emitting unit is disposed on the charge generation layer and includes a second hole transport layer and a second electron transport layer. In the first hole, only the first electron transport layer, charge generation layer, second hole transport layer, and second electron transport layer of the organic layer are provided, and In the first hole, the plurality of auxiliary electrodes are in contact with the first electron transport layer and are electrically connected to the charge generation layer through the first electron transport layer.

7. The display device according to claim 4, wherein the organic layer comprises: The first light-emitting unit includes a hole injection layer, a first hole transport layer, and a first electron transport layer; A charge generation layer on the first light-emitting unit; as well as The second light-emitting unit is disposed on the charge generation layer and includes a second hole transport layer and a second electron transport layer. In the first hole, only the hole injection layer, the first hole transport layer, the first electron transport layer, the charge generation layer, the second hole transport layer, and the second electron transport layer of the organic layer are provided, and In the first hole, the plurality of auxiliary electrodes are in contact with the hole injection layer and are electrically connected to the charge generation layer through the hole injection layer.

8. The display device according to claim 2, wherein the plurality of auxiliary electrodes comprises: First transparent conductive layer; A reflective layer on the first transparent conductive layer; and A second transparent conductive layer on the reflective layer, At least a portion of the plurality of auxiliary electrodes includes a second hole that exposes a portion of the upper surface of the reflective layer.

9. The display device according to claim 8, further comprising: A dam portion, configured to cover the ends of the plurality of first electrodes and define a light-emitting area. The embankment includes a second opening configured to overlap with the second hole and expose a portion of the upper surface of the plurality of reflective layers.

10. The display device according to claim 9, wherein the organic layer comprises: The first light-emitting unit includes a hole injection layer, a first hole transport layer, and a first electron transport layer; A charge generation layer on the first light-emitting unit; as well as The second light-emitting unit is disposed on the charge generation layer and includes a second hole transport layer and a second electron transport layer. In the second hole, only the first electron transport layer, charge generation layer, second hole transport layer, and second electron transport layer of the organic layer are provided, and In the second hole, the plurality of auxiliary electrodes are in contact with the first electron transport layer and are electrically connected to the charge generation layer through the first electron transport layer.

11. The display device according to claim 9, wherein the organic layer comprises: The first light-emitting unit includes a hole injection layer, a first hole transport layer, and a first electron transport layer; A charge generation layer on the first light-emitting unit; as well as The second light-emitting unit is disposed on the charge generation layer and includes a second hole transport layer and a second electron transport layer. In the second hole, only the hole injection layer, the first hole transport layer, the first electron transport layer, the charge generation layer, the second hole transport layer, and the second electron transport layer from the organic layer are provided, and In the second hole, the plurality of auxiliary electrodes are in contact with the hole injection layer and are electrically connected to the charge generation layer through the hole injection layer.

12. A display device, comprising: A substrate, on which a plurality of sub-pixels are defined; Multiple transistors disposed on the substrate; Multiple power lines are disposed on the substrate; A planarization layer disposed on the plurality of transistors and the plurality of power lines; A plurality of first electrodes are disposed on the planarization layer in each of the plurality of sub-pixels and electrically connected to the plurality of transistors; Multiple auxiliary electrodes are disposed between multiple first electrodes on the planarization layer and electrically connected to the multiple power lines; An organic layer disposed on the plurality of first electrodes and the plurality of auxiliary electrodes; as well as The second electrode is disposed on the organic layer. A portion of the upper surface and side surface of the plurality of auxiliary electrodes are in contact with the organic layer.

13. The display device of claim 12, wherein at least a portion of the plurality of auxiliary electrodes includes a first hole exposing a portion of the upper surface of the planarization layer.

14. The display device according to claim 13, wherein the thickness of the organic layer disposed on the plurality of auxiliary electrodes is greater than or equal to the thickness of the organic layer disposed on the upper surface of the planarization layer in the first hole.

15. The display device according to claim 14, wherein the organic layer disposed on the plurality of auxiliary electrodes comprises a hole injection layer, a first hole transport layer, a first electron transport layer, a charge generation layer, a second hole transport layer, and a second electron transport layer, and The organic layer disposed on the upper surface of the planarization layer in the first hole includes the first electron transport layer, the charge generation layer, the second hole transport layer, and the second electron transport layer.

16. The display device according to claim 14, wherein the organic layer disposed on the plurality of auxiliary electrodes comprises a hole injection layer, a first hole transport layer, a first electron transport layer, a charge generation layer, a second hole transport layer, and a second electron transport layer, and The organic layer disposed on the upper surface of the planarization layer in the first hole includes the hole injection layer, the first hole transport layer, the first electron transport layer, the charge generation layer, the second hole transport layer, and the second electron transport layer.

17. The display device according to claim 12, wherein the plurality of auxiliary electrodes comprises: A first transparent conductive layer; a reflective layer on the first transparent conductive layer; and a second transparent conductive layer on the reflective layer, and At least a portion of the plurality of auxiliary electrodes includes a second hole that exposes a portion of the reflective layer.

18. The display device according to claim 17, wherein the thickness of the organic layer disposed on the first transparent conductive layer is greater than or equal to the thickness of the organic layer disposed on the reflective layer in the second hole.

19. The display device according to claim 17, wherein the organic layer disposed on the first transparent conductive layer comprises a hole injection layer, a first hole transport layer, a first electron transport layer, a charge generation layer, a second hole transport layer, and a second electron transport layer, and The organic layer disposed on the reflective layer in the second hole includes the first electron transport layer, the charge generation layer, the second hole transport layer, and the second electron transport layer.

20. The display device according to claim 17, wherein the organic layer disposed on the first transparent conductive layer comprises a hole injection layer, a first hole transport layer, a first electron transport layer, a charge generation layer, a second hole transport layer, and a second electron transport layer, and The organic layer disposed on the reflective layer in the second hole includes the hole injection layer, the first hole transport layer, the first electron transport layer, the charge generation layer, the second hole transport layer, and the second electron transport layer.

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