A method and system for testing a wide band gap semiconductor by deep ultraviolet fluorescence spectroscopy
By using a deep ultraviolet laser and variable temperature and light intensity testing methods, the defect states of wide bandgap semiconductor materials are excited, solving the problem that fluorescence spectroscopy is difficult to excite in existing technologies, and realizing efficient fluorescence signal enhancement and defect information research.
Patent Information
- Authority / Receiving Office
- CN · China
- Patent Type
- Applications(China)
- Current Assignee / Owner
- MOZI LABORATORY
- Filing Date
- 2026-03-27
- Publication Date
- 2026-07-10
AI Technical Summary
Existing technologies are insufficient to effectively excite defect state luminescence in wide bandgap semiconductor materials, which limits the application of fluorescence spectroscopy in wide bandgap semiconductor research.
A deep ultraviolet laser was used as the light source to output deep ultraviolet excitation light with a wavelength of 193nm. The photon energy was greater than the bandgap of the wide bandgap semiconductor sample. Combined with temperature and light intensity variation tests, the fluorescence signal was detected and analyzed.
It significantly enhances the fluorescence signal intensity, enabling effective study of defect information in wide bandgap semiconductors, and is applicable to a variety of wide bandgap semiconductor materials.
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Abstract
Description
Technical Field
[0001] This application relates to the field of semiconductor material testing technology, and in particular to a method and system for testing deep ultraviolet fluorescence spectroscopy of wide bandgap semiconductors. Background Technology
[0002] With the advent of the energy revolution, new infrastructure, and the era of artificial intelligence, stringent requirements have been placed on the efficiency, power density, and operating environment of power electronics and radio frequency devices. This has directly spurred the rapid development of wide-bandgap semiconductors. Wide-bandgap semiconductors, due to their excellent electrical properties and stability, have wide applications in power electronics, radio frequency devices, and optoelectronic devices. However, these materials contain various point defects (such as vacancies and interstitial atoms) and defect complexes, which profoundly affect the electrical and optical properties of the materials, as well as the stability and reliability of the devices. Therefore, accurate characterization of defect properties is a crucial research topic for wide-bandgap semiconductors.
[0003] Photoluminescence spectroscopy is a non-destructive, highly sensitive characterization technique that can directly detect the electronic energy level structure associated with defects and impurities in materials. By applying excitation light to a material sample, electrons are excited from the valence band to the conduction band. The radiative recombination process of electron-hole pairs generates a fluorescence signal, and the energy level information of the material can be obtained by analyzing the fluorescence spectrum.
[0004] However, due to the large bandgap (greater than 3 eV) of wide-bandgap semiconductors such as GaN and Ga2O3, their intrinsic absorption edges are located in the ultraviolet and deep ultraviolet bands, making it impossible for conventional visible or near-ultraviolet laser sources to directly excite their bandgap transitions. Although current techniques use frequency doubling to obtain deep ultraviolet light, the light intensity is weak, making it difficult to fully excite the defect states of the material, thus limiting the application of fluorescence spectroscopy in the research of wide-bandgap semiconductors. Summary of the Invention
[0005] The purpose of this application is to provide a method and system for testing deep ultraviolet fluorescence spectroscopy of wide bandgap semiconductors, which utilizes the characteristic that the photon energy of deep ultraviolet excitation light is greater than the bandgap width of the wide bandgap semiconductor sample to achieve efficient excitation of intrinsic and defect states.
[0006] To achieve the above objectives, this application provides a method for testing deep ultraviolet fluorescence spectroscopy of wide-bandgap semiconductors, comprising the following steps: Obtain wide-bandgap semiconductor samples; A deep ultraviolet light source is used to emit deep ultraviolet excitation light onto a wide bandgap semiconductor sample, which excites the sample to generate electron-hole pairs. The recombination of these electron-hole pairs generates a fluorescence signal. The photon energy of the deep ultraviolet excitation light is greater than the bandgap width of the wide bandgap semiconductor sample. The fluorescence signal is detected and spectral analysis is performed to obtain information on the electronic energy level structure related to defects and impurities in the wide bandgap semiconductor sample.
[0007] Preferably, the wide-bandgap semiconductor deep ultraviolet fluorescence spectroscopy testing method further includes: Under the condition of emitting deep ultraviolet excitation light to a wide bandgap semiconductor sample using a deep ultraviolet light source, the temperature of the wide bandgap semiconductor sample is adjusted for testing. Fluorescence signals generated by wide-bandgap semiconductor samples were collected and corresponding fluorescence spectra were generated at at least two different temperatures. By comparing the fluorescence spectra at different temperatures and analyzing the variation of fluorescence spectral characteristic parameters with temperature, the fluorescence characteristics of wide-bandgap semiconductor samples at different temperatures can be determined.
[0008] Preferably, the wide-bandgap semiconductor deep ultraviolet fluorescence spectroscopy testing method further includes: Under the condition of emitting deep ultraviolet excitation light to a wide bandgap semiconductor sample using a deep ultraviolet light source, the intensity of the deep ultraviolet excitation light is adjusted; Under at least two different light intensities, fluorescence signals generated by wide-bandgap semiconductor samples were collected and corresponding fluorescence spectra were generated. By comparing the fluorescence spectra under different light intensities and analyzing the variation of fluorescence spectral characteristic parameters with light intensity, the fluorescence characteristics of wide bandgap semiconductor samples under different excitation light intensities can be determined.
[0009] Preferably, the light intensity adjustment method includes at least one of the following: Adjusting the attenuation level of deep ultraviolet excitation light in the optical path; Adjust the size of the light spot illuminating the wide bandgap semiconductor sample.
[0010] Preferably, the wide-bandgap semiconductor deep ultraviolet fluorescence spectroscopy testing method further includes: Compare fluorescence spectra obtained under different test conditions; the different test conditions include at least two different temperatures and at least two different light intensities. Based on the differences in characteristic parameters of fluorescence spectra obtained under different test conditions, the intrinsic energy level emission peaks and defect energy level emission peaks of wide bandgap semiconductor samples are distinguished, and the variation law of intrinsic energy level and defect energy level with test conditions is analyzed.
[0011] Preferably, the characteristic parameters include: number of peaks, peak intensity, peak position, and full width at half maximum (FWHM).
[0012] This invention also provides a wide-bandgap semiconductor deep ultraviolet fluorescence spectroscopy testing system for implementing the above-mentioned wide-bandgap semiconductor deep ultraviolet fluorescence spectroscopy testing method, comprising: A test sample stage is used to hold the wide bandgap semiconductor sample; A deep ultraviolet light source is used to emit deep ultraviolet excitation light onto a wide bandgap semiconductor sample; the photon energy of the deep ultraviolet excitation light is greater than the bandgap width of the wide bandgap semiconductor sample. A spectrometer is used to receive fluorescence signals generated by wide-bandgap semiconductor samples and to perform spectral analysis on the fluorescence signals; An optical fiber, coupled between the test sample stage and the spectrometer, is used to transmit fluorescence signals to the spectrometer.
[0013] Preferably, the deep ultraviolet light source is a deep ultraviolet laser with an output wavelength of 193nm.
[0014] Preferably, the pulse repetition frequency of the deep ultraviolet laser is between 1 and 500 Hz and continuously adjustable, and the laser energy density is between 8 and 60 mJ / cm². 2 It is adjustable continuously between these parameters.
[0015] Preferably, the test temperature is adjustable within a range of 100-700K.
[0016] In summary, the deep ultraviolet fluorescence spectroscopy method and system for wide bandgap semiconductors provided in this application have the following advantages compared to traditional techniques: It uses deep ultraviolet excitation light to excite wide bandgap semiconductor materials, taking advantage of the fact that the photon energy of the deep ultraviolet excitation light is greater than the bandgap width of the wide bandgap semiconductor sample. This achieves efficient intrinsic and defect state excitation of the wide bandgap semiconductor, significantly enhancing the fluorescence signal intensity. It provides crucial experimental evidence for studying defect information in wide bandgap semiconductors and is applicable to various wide bandgap semiconductor materials, possessing broad applicability and promotional value.
[0017] The technical solution of this application will be further described in detail below with reference to the accompanying drawings and embodiments. Attached Figure Description
[0018] Figure 1 This is a flowchart of the wide-bandgap semiconductor deep ultraviolet fluorescence spectroscopy testing method in this invention; Figure 2 This is a structural diagram of the wide bandgap semiconductor deep ultraviolet fluorescence spectroscopy testing system of the present invention; Figure 3 This is the temperature-varying fluorescence spectrum of β-Ga2O3 single crystal at room temperature according to the present invention; Figure 4 This is the fluorescence spectrum of the β-Ga2O3 single crystal of the present invention. Figure 5 This is a temperature-varying fluorescence spectrum of the MOCVD epitaxial β-Ga2O3 film of the present invention at room temperature; Figure 6 This is the fluorescence spectrum of the MOCVD epitaxial β-Ga2O3 thin film of the present invention. Figure 7 This is a temperature-varying fluorescence spectrum of the Ga2O3 amorphous thin film of the present invention at room temperature; Figure 8 This is the room-temperature fluorescence spectrum of the GaN single crystal of this invention.
[0019] Figure Labels 1. Deep ultraviolet laser; 2. JGS2 attenuator; 3. JGS1 lens; 4. Vacuum variable temperature sample stage; 5. Optical fiber; 6. Spectrometer. Detailed Implementation
[0020] The following detailed description of the embodiments of this application provided in the accompanying drawings is not intended to limit the scope of the claimed application, but merely to illustrate selected embodiments of the application. All other embodiments obtained by those skilled in the art based on the embodiments of this application without inventive effort are within the scope of protection of this application.
[0021] This invention provides a method for testing deep ultraviolet fluorescence spectroscopy of wide-bandgap semiconductors, such as... Figure 1 As shown, it includes the following steps: S1. Obtain wide bandgap semiconductor samples.
[0022] S2. A deep-ultraviolet (DUV) excitation light is emitted from a DUV source onto a wide-bandgap semiconductor sample, exciting the sample to generate electron-hole pairs. The recombination of these electron-hole pairs produces a fluorescence signal. The photon energy of the DUV excitation light is greater than the bandgap of the wide-bandgap semiconductor sample. The DUV source is a DUV laser with an excitation pulse width ranging from 5 to 30 ns, an output wavelength of 193 nm, a pulse repetition frequency that is continuously adjustable between 1 and 500 Hz, and a laser energy density of 8-60 mJ / cm². 2 It is adjustable continuously between these parameters.
[0023] S3. Detect the fluorescence signal and perform spectral analysis on the detected fluorescence signal to obtain information on the electronic energy level structure related to defects and impurities in the wide bandgap semiconductor sample.
[0024] Among them, the wide-bandgap semiconductor deep ultraviolet fluorescence spectroscopy testing method also includes: temperature variation testing and light intensity variation testing.
[0025] The variable temperature test procedure includes: Under the condition of emitting deep ultraviolet excitation light to a wide bandgap semiconductor sample using a deep ultraviolet light source, the temperature of the wide bandgap semiconductor sample is adjusted.
[0026] Fluorescence signals generated by wide-bandgap semiconductor samples were collected at at least two different temperatures, and corresponding fluorescence spectra were generated.
[0027] By comparing fluorescence spectra at different temperatures and analyzing the variation of fluorescence spectral characteristic parameters with temperature, the fluorescence characteristics of wide-bandgap semiconductor samples at different temperatures can be determined. The fluorescence spectral characteristic parameters include: number of peaks, peak intensity, peak position, and full width at half maximum (FWHM).
[0028] The steps for testing variable light intensity include: Under the condition of emitting deep ultraviolet excitation light onto a wide bandgap semiconductor sample using a deep ultraviolet light source, the intensity of the deep ultraviolet excitation light is adjusted. The intensity adjustment method includes at least one of the following: Adjusting the attenuation of deep ultraviolet excitation light in the optical path, for example, by adjusting the attenuator parameters set in the optical path. These attenuator parameters include the thickness and number of attenuators.
[0029] Adjusting the size of the light spot illuminating the wide bandgap semiconductor sample, for example, by adjusting the relative position between the lens in the optical path and the wide bandgap semiconductor sample, changes the size of the light spot illuminating the wide bandgap semiconductor sample.
[0030] Fluorescence signals generated by wide-bandgap semiconductor samples were collected under at least two different light intensities, and corresponding fluorescence spectra were generated.
[0031] By comparing the fluorescence spectra under different light intensities and analyzing the variation of fluorescence spectral characteristic parameters with light intensity, the fluorescence characteristics of wide bandgap semiconductor samples under different excitation light intensities can be determined.
[0032] Compare the fluorescence spectra obtained under different test conditions. The different test conditions include at least two different temperatures and at least two different light intensities.
[0033] Based on the differences in characteristic parameters of fluorescence spectra obtained under different testing conditions, this study distinguishes between intrinsic energy level emission peaks and defect energy level emission peaks in wide-bandgap semiconductor samples, and analyzes the variation patterns of intrinsic and defect energy levels with testing conditions. The characteristic parameters include: peak number, peak intensity, peak position, and full width at half maximum (FWHM).
[0034] This invention provides a wide-bandgap semiconductor deep ultraviolet fluorescence spectroscopy testing system, comprising: The test stage is used to hold wide-bandgap semiconductor samples. The glass window of the test stage is made of JGS1 material, which can achieve high transmittance in the deep ultraviolet-ultraviolet-visible light band.
[0035] A deep ultraviolet (DUV) light source is used to emit deep ultraviolet excitation light onto wide-bandgap semiconductor samples. The photon energy of the DUV excitation light is greater than the bandgap width of the wide-bandgap semiconductor sample. The DUV light source is a deep ultraviolet laser with an excitation pulse width ranging from 5 to 30 ns, an output wavelength of 193 nm, a pulse repetition frequency that is continuously adjustable between 1 and 500 Hz, and a laser energy density of 8-60 mJ / cm². 2It is adjustable continuously between these parameters.
[0036] A spectrometer is used to receive fluorescence signals generated by wide-bandgap semiconductor samples and to perform spectral analysis on the fluorescence signals.
[0037] An optical fiber, coupled between the test sample stage and the spectrometer, is used to transmit fluorescence signals to the spectrometer.
[0038] The wide-bandgap semiconductor deep ultraviolet fluorescence spectroscopy testing system provided by this invention also includes: The temperature control module, connected to the test sample stage, is used to adjust the test temperature of wide-bandgap semiconductor samples. The adjustable range of the test temperature is 100-700K.
[0039] The light intensity adjustment module is located in the optical path between the deep ultraviolet light source and the test sample stage, and is used to adjust the light intensity of the deep ultraviolet excitation light irradiating the wide bandgap semiconductor sample.
[0040] An attenuator is placed in the output light path of a deep ultraviolet light source. The intensity of the excitation light is changed by adjusting the thickness and number of attenuators.
[0041] An adjustable lens is placed in the optical path between the deep ultraviolet light source and the test sample stage. By adjusting the relative position between the adjustable lens and the wide bandgap semiconductor sample, the size of the light spot illuminating the sample is changed, thereby adjusting the excitation light power density.
[0042] In this invention, deep ultraviolet excitation light shines through the glass window of the test sample stage onto the sample. The wide bandgap semiconductor sample generates electron-hole pairs, and the recombination process of these electron-hole pairs produces a fluorescence signal. Using an optical fiber adjustment frame, one side of the optical fiber is brought close to the sample to receive the fluorescence signal from the wide bandgap semiconductor. The signal is then transmitted to a spectrometer via the optical fiber. By adjusting the integration time, the number of scans, and other parameters, the fluorescence spectral signal can be measured.
[0043] Using the above methods and systems, this invention can effectively test and analyze the fluorescence spectra of wide bandgap semiconductor materials, and can specifically study the influence of different defect states on their fluorescence spectra.
[0044] This invention employs, as follows Figure 2 The wide-bandgap semiconductor deep ultraviolet fluorescence spectroscopy testing system shown was used to test various semiconductor samples. Data and spectrum acquisition and processing methods all employed techniques commonly used in the field. (Example: Wide-bandgap semiconductor deep ultraviolet fluorescence spectroscopy testing system, such as...) Figure 2 As shown, it includes: a deep ultraviolet laser 1, a JGS2 attenuator 2, a JGS1 lens 3, a vacuum variable temperature sample stage 4, an optical fiber 5, and a spectrometer 6. The deep ultraviolet laser 1 has an output wavelength of 193 nm, a pulse width of 10 ns, and a pulse repetition frequency of 50 Hz.
[0045] Testing of fourth-generation ultrawide bandgap semiconductor β-Ga2O3 single crystal: use Figure 2 The wide bandgap semiconductor deep ultraviolet fluorescence spectroscopy testing system shown and the wide bandgap semiconductor deep ultraviolet fluorescence spectroscopy testing method of the present invention are used to test the fourth-generation ultrawide bandgap semiconductor β-Ga2O3 single crystal. Figure 3 The image shows the fluorescence spectrum of β-Ga₂O₃ single crystal at room temperature (300 K), with varying intensity as the light intensity increases (186 mJ / cm²). 2 601mJ / cm 2 939mJ / cm 2 With the increase of ), new peaks appeared at 2.98 eV, 3.08 eV, 4.23 eV, 4.33 eV, 4.57 eV, 4.67 eV, 4.98 eV and 5.08 eV, which have never been found before. The main reason is that the high light intensity induced the appearance of the above new peaks, which fully excited the fluorescence spectrum related to β-Ga2O3 defects, which is conducive to in-depth research on the characteristics of β-Ga2O3 defects.
[0046] Figure 4 This is a temperature-dependent fluorescence spectrum of a β-Ga₂O₃ single crystal. Based on... Figure 4 It can be seen that as the temperature (300K, 250K, 100K) decreases, the peak intensity of the broad peak near 3.2eV gradually increases, while the peak intensity of the sharp peak gradually decreases.
[0047] Testing of MOCVD epitaxial β-Ga2O3 thin films: use Figure 2 The wide bandgap semiconductor deep ultraviolet fluorescence spectroscopy testing system and the wide bandgap semiconductor deep ultraviolet fluorescence spectroscopy testing method of the present invention are used to test MOCVD epitaxial β-Ga2O3 thin films. Figure 5 The image shows the fluorescence spectrum of the MOCVD epitaxial β-Ga₂O₃ film at room temperature (300 K). Its fluorescence spectrum shows some similarity to that of the β-Ga₂O₃ single crystal, increasing with increasing light intensity (186 mJ / cm²). 2 601mJ / cm 2 939mJ / cm 2 With the increase of ), new peaks appeared at 2.98 eV, 3.08 eV, 4.23 eV, 4.33 eV, 4.57 eV, 4.67 eV, 4.98 eV and 5.08 eV. Figure 6 The image shows the temperature-varying fluorescence spectrum of MOCVD epitaxial β-Ga2O3 films. As the temperature decreases (300K, 250K, 100K), the intensity of the broad peak near 3.2 eV gradually increases, while the intensity of the sharp peak gradually decreases.
[0048] Test the preparation of Ga2O3 amorphous thin films by solution method: use Figure 2 The wide-bandgap semiconductor deep ultraviolet fluorescence spectroscopy testing system and the wide-bandgap semiconductor deep ultraviolet fluorescence spectroscopy testing method of the present invention are used to test Ga2O3 amorphous thin films prepared by solution method. Figure 7 The image shows the temperature-dependent fluorescence spectrum of the Ga2O3 amorphous thin film. Its characteristic peaks are located near 2.3 eV, 3.2 eV, and 4.1 eV. The peak intensity gradually increases as the temperature (300 K, 250 K, 100 K) decreases.
[0049] Testing GaN single crystals: use Figure 2 The wide-bandgap semiconductor deep ultraviolet fluorescence spectroscopy testing system shown herein and the wide-bandgap semiconductor deep ultraviolet fluorescence spectroscopy testing method of the present invention are used to test GaN single crystals. Figure 8 The image shows the fluorescence spectrum of a GaN single crystal at room temperature, with peaks at 2.2 eV, 3.2 eV, and 3.4 eV.
[0050] This invention systematically studies the defect state energy level structure and its variation with temperature and light intensity through temperature and light intensity tests, providing rich experimental data for a deeper understanding of the physical nature of defects. Furthermore, by comprehensively analyzing fluorescence spectra under different conditions, it can effectively distinguish between intrinsic energy levels and defect energy levels and analyze the variation of energy level structure with test conditions.
[0051] Finally, it should be noted that the above embodiments are only used to illustrate the technical solutions of this application and not to limit them. Although this application has been described in detail with reference to preferred embodiments, those skilled in the art should understand that modifications or equivalent substitutions can still be made to the technical solutions of this application, and these modifications or equivalent substitutions cannot cause the modified technical solutions to deviate from the spirit and scope of the technical solutions of this application.
Claims
1. A method for testing deep ultraviolet fluorescence spectroscopy in wide-bandgap semiconductors, characterized in that, Includes the following steps: Obtain wide-bandgap semiconductor samples; A deep ultraviolet light source is used to emit deep ultraviolet excitation light onto a wide bandgap semiconductor sample, which excites the sample to generate electron-hole pairs. The recombination of these electron-hole pairs generates a fluorescence signal. The photon energy of the deep ultraviolet excitation light is greater than the bandgap width of the wide bandgap semiconductor sample. The fluorescence signal is detected and spectral analysis is performed to obtain information on the electronic energy level structure related to defects and impurities in the wide bandgap semiconductor sample.
2. The method for testing deep ultraviolet fluorescence spectroscopy of wide bandgap semiconductors according to claim 1, characterized in that, The wide-bandgap semiconductor deep ultraviolet fluorescence spectroscopy testing method further includes: Under the condition of emitting deep ultraviolet excitation light to a wide bandgap semiconductor sample using a deep ultraviolet light source, the temperature of the wide bandgap semiconductor sample is adjusted for testing. Fluorescence signals generated by wide-bandgap semiconductor samples were collected and corresponding fluorescence spectra were generated at at least two different temperatures. By comparing the fluorescence spectra at different temperatures and analyzing the variation of fluorescence spectral characteristic parameters with temperature, the fluorescence characteristics of wide-bandgap semiconductor samples at different temperatures can be determined.
3. The method for testing wide-bandgap semiconductor deep ultraviolet fluorescence spectroscopy according to claim 1, characterized in that, The wide-bandgap semiconductor deep ultraviolet fluorescence spectroscopy testing method further includes: Under the condition of emitting deep ultraviolet excitation light to a wide bandgap semiconductor sample using a deep ultraviolet light source, the intensity of the deep ultraviolet excitation light is adjusted; Under at least two different light intensities, fluorescence signals generated by wide-bandgap semiconductor samples were collected and corresponding fluorescence spectra were generated. By comparing the fluorescence spectra under different light intensities and analyzing the variation of fluorescence spectral characteristic parameters with light intensity, the fluorescence characteristics of wide bandgap semiconductor samples under different excitation light intensities can be determined.
4. The method for testing deep ultraviolet fluorescence spectroscopy of wide bandgap semiconductors according to claim 3, characterized in that, The method for adjusting the light intensity includes at least one of the following: Adjusting the attenuation level of deep ultraviolet excitation light in the optical path; Adjust the size of the light spot illuminating the wide bandgap semiconductor sample.
5. The method for testing deep ultraviolet fluorescence spectroscopy of wide bandgap semiconductors according to claim 1, characterized in that, The wide-bandgap semiconductor deep ultraviolet fluorescence spectroscopy testing method further includes: Compare fluorescence spectra obtained under different test conditions; the different test conditions include at least two different temperatures and at least two different light intensities. Based on the differences in characteristic parameters of fluorescence spectra obtained under different test conditions, the intrinsic energy level emission peaks and defect energy level emission peaks of wide bandgap semiconductor samples are distinguished, and the variation law of intrinsic energy level and defect energy level with test conditions is analyzed.
6. The method for testing deep ultraviolet fluorescence spectroscopy of wide bandgap semiconductors according to claim 5, characterized in that, The characteristic parameters include: number of peaks, peak intensity, peak position, and full width at half maximum (FWHM).
7. A wide-bandgap semiconductor deep ultraviolet fluorescence spectroscopy testing system, characterized in that, The method for implementing the wide-bandgap semiconductor deep ultraviolet fluorescence spectroscopy test method according to any one of claims 1-6 includes: A deep ultraviolet light source is used to emit deep ultraviolet excitation light onto a wide bandgap semiconductor sample; the photon energy of the deep ultraviolet excitation light is greater than the bandgap width of the wide bandgap semiconductor sample. A test sample stage is used to hold the wide bandgap semiconductor sample; The temperature control module, connected to the test sample stage, is used to adjust the test temperature of wide bandgap semiconductor samples; The light intensity adjustment module is located in the optical path between the deep ultraviolet light source and the test sample stage, and is used to adjust the light intensity of the deep ultraviolet excitation light irradiating the wide bandgap semiconductor sample; A spectrometer is used to receive fluorescence signals generated by wide-bandgap semiconductor samples and to perform spectral analysis on the fluorescence signals; An optical fiber, coupled between the test sample stage and the spectrometer, is used to transmit fluorescence signals to the spectrometer.
8. The wide bandgap semiconductor deep ultraviolet fluorescence spectroscopy testing system according to claim 7, characterized in that, The deep ultraviolet light source is a deep ultraviolet laser with an output wavelength of 193nm.
9. The wide bandgap semiconductor deep ultraviolet fluorescence spectroscopy testing system according to claim 8, characterized in that, The deep ultraviolet laser has a pulse repetition frequency that is continuously adjustable between 1 and 500 Hz, and a laser energy density of 8-60 mJ / cm². 2 It is adjustable continuously between these parameters.
10. The wide bandgap semiconductor deep ultraviolet fluorescence spectroscopy testing system according to claim 7, characterized in that, The test temperature can be adjusted within the range of 100-700K.