Optoelectronic fusion transmitter and method based on full-silicon technology

Abstract

This invention relates to the field of optical communication technology and proposes an optoelectronic fusion transmitter and method based on all-silicon technology. The transmitter includes an optical transmitter, an all-silicon photodetector, and a control circuit. The all-silicon photodetector performs real-time in-situ acquisition of multi-wavelength random polarization modulation signals and optical signals from internal nodes of the optical transmitter. The optical signals are converted into monitoring electrical signals and sent to the control circuit. The all-silicon photodetector is a serpentine waveguide avalanche photodetector. An avalanche multiplication region with a reverse bias voltage is configured at the starting end of the serpentine waveguide. As the optical signals from internal nodes of the optical transmitter propagate along the serpentine waveguide, they are absorbed segment by segment, generating primary photogenerated carriers. These carriers are amplified by the avalanche multiplication effect in the high-field region to form the monitoring electrical signal. By employing an all-silicon photodetector, polarization management, multi-wavelength channel allocation, electro-optic modulation, and closed-loop power control are integrated onto a unified all-silicon technology platform, improving the integration level.

Description

Technical Field

[0001] This invention relates to the field of optical communication technology, and in particular to an optoelectronic fusion transmitter and method based on all-silicon technology. Background Technology

[0002] As the computational demands for training and inference of large-scale artificial intelligence models continue to rise, the interconnect bandwidth between accelerator chips such as GPUs and TPUs within data centers has become a core bottleneck for improving system performance. Optical interconnect technology, with its high bandwidth density and low transmission loss, is gradually replacing traditional electrical interconnects and becoming a key technology to meet the inter-chip interconnect requirements of next-generation AI computing clusters. Silicon-based photonics technology, due to its inherent compatibility with complementary metal-oxide-semiconductor (CMOS) processes, has become an ideal platform for achieving optoelectronic convergence on a single chip and adapting to high-density optical interconnect scenarios in data centers.

[0003] However, existing technologies still face numerous challenges in achieving high integration, low cost, and high stability in silicon-based optical transmitters for AI data centers. First, the monitoring of the optical device operating status in traditional silicon-based optical transmitters relies on germanium-silicon photodetectors. The manufacturing of germanium-silicon photodetectors requires an additional germanium epitaxial growth process beyond the standard CMOS process flow, creating compatibility conflicts with logic circuit manufacturing processes. This not only increases process complexity and chip fabrication costs but also hinders true monolithic integration of photonic integrated circuits and drive control circuits. Second, silicon-based optical transmitters are susceptible to polarization states, temperature drift, and process deviations during operation, exhibiting polarization sensitivity and wavelength drift issues. Existing technologies lack efficient on-chip polarization management solutions, and controlling the stability of multiple channels often requires independent beam splitting monitoring links, introducing additional optical losses and occupying valuable chip layout area, which is detrimental to high-density integration. Furthermore, the reliance of traditional architectures on germanium-silicon epitaxial processes keeps the manufacturing cost of optical transmitters high, increases process risks, and limits channel scalability, making it difficult to flexibly adapt to the needs of wavelength division multiplexing systems of different capacities. This also fails to meet the multiple requirements of artificial intelligence data centers for high process compatibility, high cost-effectiveness, and high scalability of optical interconnect devices.

[0004] Existing silicon-based optical transmitters struggle to achieve both all-silicon monolithic integration and process compatibility, as well as polarization and wavelength stability under multi-wavelength division multiplexing (WDM) conditions. They suffer from poor process compatibility, high manufacturing costs, polarization sensitivity, and difficulty in controlling multi-channel stability. Summary of the Invention

[0005] In view of this, this invention proposes a photoelectric fusion transmitter and method based on all-silicon technology. By introducing an all-silicon photodetector, the overall manufacturing process is more compatible with standard CMOS processes, reducing germanium-silicon epitaxial steps and lowering wafer fabrication costs and process risks. The integration of an on-chip polarization management unit enables the architecture to operate stably for any polarization input, eliminating the need for external components such as polarization-maintaining fibers. An electrical control loop provides the system with adaptive compensation capabilities for temperature drift and process deviations, ensuring long-term stable operation of multiple channels. It also possesses good channel scalability, flexibly adapting to the needs of wavelength division multiplexing systems of different capacities, and is suitable for high-density optical interconnect scenarios in artificial intelligence data centers.

[0006] In a first aspect, the present invention provides a photoelectric fusion transmitter based on all-silicon technology, including an optical transmitter, an all-silicon photodetector, and a control circuit; The optical transmitter is used to receive multi-wavelength random polarization state optical signals, perform polarization unification, wavelength channel allocation, power correction and high-speed electro-optic modulation on the multi-wavelength random polarization state optical signals, and output multi-wavelength random polarization state modulated signals. The all-silicon photodetector is used to collect multi-wavelength random polarization state modulation signals and optical signals from internal nodes of the optical transmitter in real time and in situ. The optical signals are converted into monitoring electrical signals and sent to the control circuit. The all-silicon photodetector is a serpentine waveguide avalanche photodetector. The starting end of the serpentine waveguide is configured with an avalanche multiplication region with a reverse bias voltage applied. The optical signals from internal nodes of the optical transmitter are absorbed segment by segment as they propagate along the serpentine waveguide. Primary photogenerated carriers are amplified by the avalanche multiplication effect in the high field region to form a detectable output current as a monitoring electrical signal. The control circuit amplifies, filters, and performs analog-to-digital conversion on the monitoring electrical signal to generate a feedback signal. The feedback signal is then sent to the optical transmitter to drive the internal components of the optical transmitter, forming a closed-loop electrical control circuit. This enables real-time locking of the resonant wavelength of the internal channel of the optical transmitter and stable maintenance of its operating state.

[0007] Based on the above technical solutions, preferably, the optical transmitter includes a polarization beam splitter and rotation module, a micro-ring filter, an automatic polarization controller, and a micro-ring modulator; The polarization beam splitting and rotation module is used to perform polarization rotation and beam splitting on multi-wavelength random polarization optical signals to obtain a first orthogonal component and a second orthogonal component. The first orthogonal component and the second orthogonal component are unified into a single polarization mode suitable for silicon-based waveguide transmission through the polarization rotation mechanism to obtain a first optical signal and a second optical signal. The micro-ring filter is used to filter the first optical signal and the second optical signal to obtain the first filtered signal and the second filtered signal; The automatic polarization controller is used to perform polarization state correction and power balance on the first filtered signal and the second filtered signal to obtain the first channel signal and the second channel signal. The micro-ring modulator is used to apply high-speed electrical signals to the first channel signal and the second channel signal to complete data loading and output a multi-wavelength random polarization modulated signal.

[0008] Based on the above technical solutions, preferably, the all-silicon photodetector can also be a micro-ring photodetector fabricated using an all-silicon process, wherein the micro-ring photodetector includes an absorption detection region and a thermally tuned region.

[0009] Based on the above technical solutions, preferably, the absorption detection region is configured with a photoelectric conversion structure made of PN structure. The photoelectric conversion structure uses the carrier absorption mechanism in the silicon waveguide to convert the cavity light field into a detectable photocurrent as a monitoring electrical signal.

[0010] Based on the above technical solutions, preferably, the thermally tuned region is equipped with a thermally tuned structure, which changes the local temperature of the waveguide by applying electrical power, and uses the thermo-optical effect of silicon material to adjust the resonant wavelength of the micro-ring, so that the resonant center wavelength of the all-silicon photodetector is aligned with the target monitoring wavelength.

[0011] Based on the above technical solutions, preferably, the micro-ring modulator is used to apply high-speed electrical signals to the first channel signal and the second channel signal to complete data loading and output a multi-wavelength random polarization state modulated signal, including: The micro-ring modulator is based on the carrier dispersion effect of silicon material. It synchronously applies high-speed electrical signals to each wavelength optical carrier in the first channel signal and the second channel signal. By changing the effective refractive index of the micro-ring waveguide, it achieves high-speed electro-optic modulation of the optical carrier, completes the loading and coupling of high-speed data, and outputs a multi-wavelength random polarization state modulated signal.

[0012] Based on the above technical solutions, preferably, the automatic polarization controller is an on-chip automatic power control unit based on a Mach-Zehnder interferometer, which equalizes the optical power of each channel of the first and second filtered signals by adjusting the phase difference between the two arms of the interferometer, so that the first channel signal and the second channel signal entering the micro-ring modulator meet the same power conditions.

[0013] Based on the above technical solutions, preferably, the first port of the optical transmitter is connected to the first port of the all-silicon photodetector, the second port of the optical transmitter is connected to the first port of the control circuit, and the second port of the all-silicon photodetector is connected to the second port of the control circuit.

[0014] Secondly, the present invention also provides a photoelectric fusion emission method based on an all-silicon process, the method comprising: Acquire multi-wavelength randomly polarized optical signals; The multi-wavelength random polarization state optical signal is input into an optical transmitter for polarization unification, wavelength channel allocation, power correction, and high-speed electro-optic modulation, and outputs a multi-wavelength random polarization state modulated signal. The multi-wavelength random polarization state modulation signal and the optical signal from the internal node of the optical transmitter are sent to the all-silicon photodetector, which converts the optical signal into a monitoring electrical signal. The monitoring electrical signal is sent to the control circuit for amplification, filtering and analog-to-digital conversion to generate a feedback signal. The feedback signal is then sent to the optical transmitter to drive the internal components of the optical transmitter, forming a closed-loop electrical control circuit. This enables real-time locking of the resonant wavelength of the internal channel of the optical transmitter and stable maintenance of its operating state.

[0015] Based on the above technical solutions, preferably, the step of inputting the multi-wavelength random polarization state optical signal into an optical transmitter for polarization unification, wavelength channel allocation, power correction, and high-speed electro-optic modulation, and outputting a multi-wavelength random polarization state modulated signal, includes: The multi-wavelength random polarization optical signal is input into the polarization beam splitting and rotation module for polarization rotation and beam splitting to obtain a first orthogonal component and a second orthogonal component. The first orthogonal component and the second orthogonal component are unified into a single polarization mode suitable for silicon waveguide transmission through the polarization rotation mechanism to obtain a first optical signal and a second optical signal. The first optical signal and the second optical signal are input into a micro-ring filter for filtering to obtain the first filtered signal and the second filtered signal. The first and second filtered signals are input into the automatic polarization controller for polarization state correction and power balance to obtain the first channel signal and the second channel signal. The first and second channel signals are input into the micro-ring modulator to apply a high-speed electrical signal, complete the data loading, and output a multi-wavelength random polarization modulated signal.

[0016] The optoelectronic fusion transmitter based on all-silicon technology provided by this invention has the following advantages over existing technologies: (1) By introducing an all-silicon photodetector, the overall manufacturing process is more compatible with standard CMOS processes, reducing germanium-silicon epitaxial steps and lowering wafer fabrication costs and process risks. The integration of an on-chip polarization management unit enables the architecture to operate stably for any polarization input without the need for external components such as polarization-maintaining fibers. The electrical control loop provides the system with adaptive compensation capabilities for temperature drift and process deviations, ensuring long-term stable operation of multiple channels. It has good channel scalability and can flexibly adapt to the needs of wavelength division multiplexing systems of different capacities, making it suitable for high-density optical interconnect scenarios in artificial intelligence data centers.

[0017] (2) By using an all-silicon photodetector to replace the traditional germanium-silicon detector, polarization management, multi-wavelength channel allocation, electro-optic modulation and closed-loop power control are integrated on a unified all-silicon process platform, achieving true all-silicon monolithic integration. This enables real-time monitoring of the on-chip optical device's operating status and, in conjunction with a closed-loop digital control circuit, achieves device stability control, increases compatibility with standard CMOS processes, and significantly reduces manufacturing costs while improving integration. This is suitable for optical interconnect scenarios in artificial intelligence data centers.

[0018] (3) By utilizing the inherent nonlinear optical effect or defect-assisted absorption mechanism of silicon-based waveguides, photoelectric conversion is achieved. It has the capability to be manufactured together with functional units such as modulation and filtering in the same process flow. It can collect the working status signals of each channel optical device in real time and provide feedback basis for the subsequent control circuit. Attached Figure Description

[0019] To more clearly illustrate the technical solutions in the embodiments of the present invention or the prior art, the drawings used in the description of the embodiments or the prior art will be briefly introduced below. Obviously, the drawings described below are only some embodiments of the present invention. For those skilled in the art, other drawings can be obtained based on these drawings without creative effort.

[0020] Figure 1 This is a schematic diagram of the optoelectronic fusion transmitter based on all-silicon technology provided by the present invention; Figure 2 This is one of the schematic diagrams of the all-silicon process detector structure provided by the present invention; Figure 3 This is the second schematic diagram of the all-silicon process detector structure provided by the present invention; Figure 4 This is one of the implementation methods of the optoelectronic fusion transmitter architecture based on all-silicon technology provided by the present invention; Figure 5 This is the second implementation method of the optoelectronic fusion transmitter architecture based on all-silicon technology provided by the present invention; Figure 6 This is a schematic flowchart of the optoelectronic fusion emission method based on all-silicon process provided by the present invention; Explanation of reference numerals in the attached figures: 1. Optical transmitter; 2. All-silicon photodetector; 3. Control circuit; 11. Polarization beam splitter / rotation module; 12. Micro-ring filter; 13. Automatic polarization controller; 14. Micro-ring modulator. Detailed Implementation

[0021] The technical solutions of the embodiments of this application will be clearly described below with reference to the accompanying drawings. Obviously, the described embodiments are only some, not all, of the embodiments of this application. All other embodiments obtained by those skilled in the art based on the embodiments of this application are within the scope of protection of this application.

[0022] Unless otherwise defined, the technical or scientific terms used in this invention shall have the ordinary meaning understood by one of ordinary skill in the art to which this invention pertains. The terms "first," "second," and similar terms used in this invention do not indicate any order, quantity, or importance, but are merely used to distinguish different components. Similarly, the terms "an" or "a" and similar terms do not indicate a quantity limitation, but rather indicate the presence of at least one. The terms "connected" or "linked" and similar terms are not limited to physical or mechanical connections, but can include electrical connections, whether direct or indirect. "Up," "down," "left," "right," etc., are used only to indicate relative positional relationships; when the absolute position of the described object changes, the relative positional relationship also changes accordingly.

[0023] like Figure 1 As shown, the present invention provides a photoelectric fusion transmitter based on all-silicon technology, including an optical transmitter 1, an all-silicon photodetector 2, and a control circuit 3; The optical transmitter 1 is used to receive multi-wavelength random polarization state optical signals, perform polarization unification, wavelength channel allocation, power correction and high-speed electro-optic modulation on the multi-wavelength random polarization state optical signals, and output multi-wavelength random polarization state modulated signals. In some embodiments, the optical transmitter 1 includes a polarization beam splitter and rotation module 11, a micro-ring filter 12, an automatic polarization controller 13, and a micro-ring modulator 14; The polarization beam splitting and rotation module 11 is used to perform polarization rotation and beam splitting on multi-wavelength random polarization optical signals to obtain a first orthogonal component and a second orthogonal component. The first orthogonal component and the second orthogonal component are unified into a single polarization mode suitable for silicon-based waveguide transmission through the polarization rotation mechanism to obtain a first optical signal and a second optical signal. In some embodiments, without considering losses, the magnitude of the first optical signal is equal to the transverse electric mode component of the multi-wavelength randomly polarized optical signal, and the magnitude of the second optical signal is equal to the transverse magnetic mode component of the multi-wavelength randomly polarized optical signal.

[0024] The micro-ring filter 12 is used to filter the first optical signal and the second optical signal to obtain the first filtered signal and the second filtered signal; The automatic polarization controller 13 is used to perform polarization state correction and power balance on the first filtered signal and the second filtered signal to obtain the first channel signal and the second channel signal. It should be noted that the embodiments of this application do not limit the structure of the automatic polarization controller 13.

[0025] The micro-ring modulator 14 is used to apply high-speed electrical signals to the first channel signal and the second channel signal to complete data loading and output a multi-wavelength random polarization state modulated signal.

[0026] The all-silicon photodetector 2 is used to collect multi-wavelength random polarization state modulation signals and optical signals from internal nodes of optical transmitter 1 in real time and in situ. The optical signals are converted into monitoring electrical signals and sent to control circuit 3. The all-silicon photodetector 2 is a serpentine waveguide avalanche photodetector. The starting end of the serpentine waveguide is configured with an avalanche multiplication region with a reverse bias voltage applied. The optical signals from internal nodes of optical transmitter 1 are absorbed segment by segment as they propagate along the serpentine waveguide. Primary photogenerated carriers are amplified by the avalanche multiplication effect in the high field region to form a detectable output current as a monitoring electrical signal. The control circuit 3 amplifies, filters, and performs analog-to-digital conversion on the monitoring electrical signal to generate a feedback signal. The feedback signal is then sent to the optical transmitter 1 to drive the internal components of the optical transmitter 1, forming a closed-loop electrical control circuit. This enables real-time locking of the resonant wavelength of the internal channel of the optical transmitter 1 and stable maintenance of its operating state.

[0027] In some embodiments, the inherent logical connections and collaborative working mechanisms between the components are as follows: When a multi-wavelength random polarization state optical signal is coupled into the system, the polarization beam splitting and rotation module 11 first serves as the optical path entry and polarization preprocessing stage, decomposing the arbitrary polarization state of the input signal into two orthogonal components, and then unifying them into the chip's internal standard polarization mode through an internal rotation mechanism, providing a polarization-consistent optical signal input for subsequent devices. The polarization-unified signal enters the micro-ring filter 12, which utilizes the wavelength selection characteristics of the micro-ring resonator to accurately filter out the optical carriers corresponding to each channel from the multi-wavelength broadband signal, realizing the allocation and routing of multi-wavelength channels. The optical carriers of each channel are then further polarization-state corrected and power-equalized by the automatic polarization controller 13 to ensure that the signals of each channel entering the modulation stage meet consistent polarization and power conditions. The micro-ring modulator 14, as the core modulation stage, applies high-speed electrical signals to the optical carriers of each channel, and outputs a multi-wavelength random polarization state modulated signal after data loading is completed. Meanwhile, the all-silicon photodetector 2 collects the optical power status of each key node inside the optical transmitter 1 in real time in situ, and the obtained monitoring signal is sent to the control circuit 3. The control circuit 3 continuously drives each tuning unit inside the optical transmitter 1 according to the feedback signal to form a closed-loop electrical control circuit, realize the real-time locking of the resonant wavelength of each channel and the stable maintenance of the working state, thereby ensuring the long-term stable transmission performance of the whole machine under multi-channel and multi-wavelength conditions.

[0028] In some embodiments, Figure 2 This is one of the schematic diagrams of the all-silicon process detector structure provided by the present invention, such as... Figure 2 As shown, the all-silicon photodetector 2 is a micro-ring photodetector structure fabricated using all-silicon technology. The micro-ring photodetector includes an absorption detection region and a thermally tuned region. This structure is divided into two functional regions along the circumference of the ring waveguide: the absorption detection region and the thermally tuned region. The absorption detection region is equipped with a photoelectric conversion structure PD100 composed of a PN junction. It utilizes the carrier absorption mechanism in the silicon waveguide to convert the intracavity optical field into a detectable photocurrent, serving as the monitoring signal source for the subsequent control circuit. The thermally tuned region is equipped with a thermally tuned structure HT100. By applying electrical power to change the local temperature of the waveguide, the thermo-optical effect of silicon material is used to adjust the resonant wavelength of the micro-ring, ensuring precise alignment of the resonant center wavelength of the all-silicon photodetector 2 with the target monitoring wavelength. This structure utilizes the field enhancement effect of the micro-ring resonant cavity to effectively extend the interaction length between light and matter, improving the effective absorption efficiency of the PN junction. Simultaneously, it leverages the inherent wavelength selectivity of the micro-ring to achieve precise response to signals from specific channels. All functional regions can be integrally fabricated within a standard silicon-based photonics process flow.

[0029] In some embodiments, the micro-ring modulator 14 is used to apply a high-speed electrical signal to the first channel signal and the second channel signal to complete data loading and output a multi-wavelength random polarization state modulated signal, including: The micro-ring modulator 14 is based on the carrier dispersion effect of silicon material. It synchronously applies high-speed electrical signals to each wavelength optical carrier in the first channel signal and the second channel signal. By changing the effective refractive index of the micro-ring waveguide, it achieves high-speed electro-optic modulation of the optical carrier, completes the loading and coupling of high-speed data, and outputs a multi-wavelength random polarization state modulated signal.

[0030] In some embodiments, the automatic polarization controller 13 is an on-chip automatic power control unit based on a Mach-Zehnder interferometer. It equalizes the optical power of each channel of the first and second filtered signals by adjusting the phase difference between the two arms of the interferometer, so that the first and second channel signals entering the micro-ring modulator 14 meet the same power conditions.

[0031] In some embodiments, the first port of the optical transmitter 1 is connected to the first port of the all-silicon photodetector 2, the second port of the optical transmitter 1 is connected to the first port of the control circuit 3, and the second port of the all-silicon photodetector 2 is connected to the second port of the control circuit 3.

[0032] In some embodiments, Figure 3 This is the second schematic diagram of the all-silicon process detector structure provided by the present invention, as shown below. Figure 3As shown, another specific implementation of the all-silicon photodetector 2 is a bent waveguide avalanche photodetector structure. This structure uses a serpentine bent waveguide as the light transmission path. An avalanche multiplication region with a reverse bias voltage Vbias is configured at the start of the waveguide. As the light signal propagates along the bent waveguide, it is absorbed segment by segment. The resulting primary photogenerated carriers are amplified by the avalanche multiplication effect in the high-field region, forming a detectable output current. The serpentine waveguide layout effectively extends the light-matter interaction path while maintaining a compact overall device footprint. The avalanche multiplication mechanism achieves on-chip gain for weak photogenerated currents without the need for external amplification circuits, enabling the structure to maintain a reliable detection response even under low-power monitoring signal conditions.

[0033] Figure 4 This is one implementation method of the optoelectronic fusion transmitter architecture based on all-silicon technology provided by the present invention, such as... Figure 4 As shown, a micro-ring photodetector is used as the on-chip monitoring unit. The multi-wavelength mixed polarization input signal first enters a polarization beam rotator, separating the TE and TM polarization components and rotating the TM component to TE mode, forming parallel optical signals with unified polarization modes and carrying the same wavelength information in the upper and lower waveguides. The two signals then enter a multi-wavelength micro-ring filter array. Each micro-ring filter utilizes the wavelength selectivity of the resonant cavity to precisely filter out the corresponding channel's optical carrier from the broadband input, completing the allocation and routing of multi-wavelength channels. The optical carriers of each channel then enter an on-chip automatic power control unit based on a Mach-Zehnder interferometer structure. By adjusting the phase difference between the two arms of the interferometer, the optical power of each channel is precisely equalized, ensuring that the signals entering the modulation stage meet consistent power conditions. The power-equalized optical carriers then enter their corresponding micro-ring modulators, synchronously applying high-speed electrical modulation to the two parallel signals. After data loading, channels a and b output multi-wavelength modulated signals, respectively. Each channel's micro-ring modulator output is equipped with a micro-ring photodetector to acquire the optical power status of each wavelength in real time for both channels. The acquired detection signals are sent to the electrical control chip. The electrical control chip drives the thermal tuning units of each micro-ring filter and micro-ring modulator based on the feedback signals from each channel, forming a complete closed-loop electrical control circuit to achieve real-time locking of the resonant wavelength of each channel and continuous optimization of the optical modulation amplitude.

[0034] Figure 5 This is the second implementation method of the optoelectronic fusion transmitter architecture based on all-silicon technology provided by the present invention, such as... Figure 5As shown, a curved waveguide avalanche photodetector is used as the on-chip monitoring unit. The multi-wavelength mixed polarization input signal first enters a polarization beam rotator, separating the TE and TM polarization components and rotating the TM component to TE mode, forming parallel optical signals with unified polarization modes and carrying the same wavelength information in the upper and lower waveguides. The two signals then enter a multi-wavelength micro-ring filter array. Each micro-ring filter utilizes the wavelength selectivity of the resonant cavity to precisely filter out the corresponding channel's optical carrier from the broadband input, completing the allocation and routing of multi-wavelength channels. The optical carriers of each channel then enter an on-chip automatic power control unit based on a Mach-Zehnder interferometer structure. By adjusting the phase difference between the two arms of the interferometer, the optical power of each channel is precisely equalized, ensuring that the signals entering the modulation stage meet consistent power conditions. The power-equalized optical carriers then enter their corresponding micro-ring modulators, synchronously applying high-speed electrical modulation to the two parallel signals. After data loading, channels a and b output multi-wavelength modulated signals, respectively. Each channel's micro-ring modulator output is equipped with a bent waveguide avalanche photodetector. As the optical signal propagates along the serpentine bend of the waveguide, it is absorbed segment by segment. The resulting primary photogenerated carriers are amplified by the avalanche multiplication effect to form the detection current. Since the avalanche multiplication process requires a high electric field, each detector is equipped with a dedicated high-voltage bias chip to provide a stable reverse bias voltage. The obtained detection signal is sent to an electrical control chip. Based on the feedback signals from each channel, the electrical control chip drives the thermal tuning units of each micro-ring filter and micro-ring modulator, forming a complete closed-loop electrical control circuit. This enables real-time locking of the resonant wavelength of each channel and continuous optimization of the optical modulation amplitude.

[0035] In this embodiment, an all-silicon photodetector is introduced, which utilizes the inherent nonlinear optical effects or defect-state-assisted absorption mechanism of silicon-based waveguides to achieve photoelectric conversion. It has the capability to be manufactured in the same process flow as modulation and filtering functional units, and can acquire the operating status signals of each channel's optical devices in real time, providing feedback for subsequent control circuits. In terms of system-level architecture, the input optical signal is first processed by a polarization management unit, which uniformly converts any polarization state into the standard polarization mode within the chip, reducing the impact of polarization sensitivity on the performance of subsequent devices. The polarization-unified optical signal enters a multi-wavelength channel allocation unit, where the optical carrier of each wavelength channel is precisely routed to the corresponding electro-optic modulation unit, completing high-speed data loading. Each channel's modulation output is equipped with an all-silicon photodetector, which acquires the channel power status in situ. The resulting monitoring signal is sent to an electrical control loop, continuously driving the tuning units of each channel through closed-loop feedback, locking the resonant wavelength to the target value and maintaining the optimal optical modulation amplitude, thereby achieving stable and reliable transmission performance under multi-channel simultaneous operation.

[0036] Figure 6 This is a schematic flowchart of the optoelectronic fusion emission method based on all-silicon technology provided by the present invention, as shown below. Figure 6 As shown, the optoelectronic fusion emission method based on all-silicon process includes steps 610, 620, 630 and 640.

[0037] Step 610: Acquire multi-wavelength random polarization state light signals; Step 620: Input the multi-wavelength random polarization state optical signal into the optical transmitter 1, perform polarization unification, wavelength channel allocation, power correction and high-speed electro-optic modulation, and output the multi-wavelength random polarization state modulated signal; In some embodiments, the step of inputting the multi-wavelength random polarization state optical signal into the optical transmitter 1 for polarization unification, wavelength channel allocation, power correction, and high-speed electro-optic modulation, and outputting a multi-wavelength random polarization state modulated signal, includes: The multi-wavelength random polarization optical signal is input into the polarization beam splitting and rotation module 11 for polarization rotation and beam splitting to obtain a first orthogonal component and a second orthogonal component. The first orthogonal component and the second orthogonal component are unified into a single polarization mode suitable for silicon waveguide transmission through the polarization rotation mechanism to obtain a first optical signal and a second optical signal. The first optical signal and the second optical signal are input into the micro-ring filter 12 for filtering to obtain the first filtered signal and the second filtered signal. The first and second filtered signals are input into the automatic polarization controller 13 for polarization state correction and power balance to obtain the first channel signal and the second channel signal. The first and second channel signals are input into the micro-ring modulator 14 to apply high-speed electrical signals, complete the data loading, and output a multi-wavelength random polarization state modulated signal.

[0038] Step 630: Send the multi-wavelength random polarization state modulation signal and the optical signal from the internal node of the optical transmitter 1 to the all-silicon photodetector 2, and convert the optical signal into a monitoring electrical signal; Step 640: The monitoring electrical signal is sent to the control circuit 3 for amplification, filtering and analog-to-digital conversion to generate a feedback signal. The feedback signal is then sent to the optical transmitter 1 to drive the internal components of the optical transmitter 1, forming a closed-loop electrical control circuit to achieve real-time locking of the resonant wavelength of the internal channel of the optical transmitter 1 and stable maintenance of its working state.

[0039] In this embodiment, by using an all-silicon photodetector to replace the traditional germanium-silicon detector, polarization management, multi-wavelength channel allocation, electro-optic modulation, and closed-loop power control are integrated onto a unified all-silicon process platform. With the help of digital control circuits, real-time monitoring and closed-loop stable control of the operating status of each optical device are achieved, supporting multi-wavelength wavelength division multiplexing. This realizes all-silicon integration, reduces the dependence on germanium-silicon epitaxial process modules and independent beam splitting monitoring links in traditional architectures, improves process compatibility and integration, and reduces manufacturing costs. It can be widely used in optical interconnect scenarios for artificial intelligence data centers.

[0040] The above description is only a preferred embodiment of the present invention and is not intended to limit the present invention. Any modifications, equivalent substitutions, improvements, etc., made within the spirit and principles of the present invention should be included within the protection scope of the present invention.

Claims

1. A photoelectric fusion transmitter based on all-silicon technology, characterized in that, It includes an optical transmitter (1), an all-silicon photodetector (2), and a control circuit (3); The optical transmitter (1) is used to receive multi-wavelength random polarization state optical signals, perform polarization unification, wavelength channel allocation, power correction and high-speed electro-optic modulation on the multi-wavelength random polarization state optical signals, and output multi-wavelength random polarization state modulated signals. The all-silicon photodetector (2) is used to collect multi-wavelength random polarization state modulation signals and optical signals from the internal nodes of the optical transmitter (1) in real time and convert the optical signals into monitoring electrical signals and send them to the control circuit (3). The all-silicon photodetector (2) is a serpentine waveguide avalanche photodetector. The starting end of the serpentine waveguide is configured with an avalanche multiplication region with a reverse bias voltage. The optical signals from the internal nodes of the optical transmitter (1) are absorbed segment by segment during the continuous propagation along the serpentine waveguide, generating primary photogenerated carriers. After being amplified by the avalanche multiplication effect in the high field region, a detectable output current is formed as a monitoring electrical signal. The control circuit (3) amplifies, filters and converts the monitoring electrical signal into analog and digital signals to generate a feedback signal. The feedback signal is sent to the optical transmitter (1) to drive the internal components of the optical transmitter (1) and form a closed-loop electrical control circuit to realize the real-time locking of the resonant wavelength of the internal channel of the optical transmitter (1) and the stable maintenance of the working state.

2. The optoelectronic fusion transmitter based on all-silicon technology as described in claim 1, characterized in that, The optical transmitter (1) includes a polarization beam splitter rotation module (11), a micro-ring filter (12), an automatic polarization controller (13), and a micro-ring modulator (14). The polarization beam splitting and rotation module (11) is used to perform polarization rotation and beam splitting on multi-wavelength random polarization optical signals to obtain a first orthogonal component and a second orthogonal component. The first orthogonal component and the second orthogonal component are unified into a single polarization mode suitable for silicon waveguide transmission through the polarization rotation mechanism to obtain a first optical signal and a second optical signal. The micro-ring filter (12) is used to filter the first optical signal and the second optical signal to obtain the first filtered signal and the second filtered signal; The automatic polarization controller (13) is used to perform polarization state correction and power balance on the first filtered signal and the second filtered signal to obtain the first channel signal and the second channel signal; The micro-ring modulator (14) is used to apply high-speed electrical signals to the first channel signal and the second channel signal to complete data loading and output multi-wavelength random polarization state modulated signals.

3. The optoelectronic fusion transmitter based on all-silicon technology as described in claim 2, characterized in that, The all-silicon photodetector (2) can also be a micro-ring photodetector made using an all-silicon process, wherein the micro-ring photodetector includes an absorption detection region and a thermal tuning region.

4. The optoelectronic fusion transmitter based on all-silicon technology as described in claim 3, characterized in that, The absorption detection region is equipped with a photoelectric conversion structure made of PN junction. The photoelectric conversion structure uses the carrier absorption mechanism in the silicon waveguide to convert the optical field in the cavity into a detectable photocurrent as a monitoring electrical signal.

5. The optoelectronic fusion transmitter based on all-silicon technology as described in claim 4, characterized in that, The thermally tuned region is equipped with a thermally tuned structure. By applying electric power to change the local temperature of the waveguide, the thermo-optical effect of silicon material is used to adjust the resonant wavelength of the micro-ring, so that the resonant center wavelength of the all-silicon photodetector (2) is aligned with the target monitoring wavelength.

6. The optoelectronic fusion transmitter based on all-silicon technology as described in claim 5, characterized in that, The micro-ring modulator (14) is used to apply high-speed electrical signals to the first channel signal and the second channel signal to complete data loading and output a multi-wavelength random polarization modulated signal, including: The micro-ring modulator (14) is based on the carrier dispersion effect of silicon material. It synchronously applies high-speed electrical signals to each wavelength optical carrier in the first channel signal and the second channel signal. By changing the effective refractive index of the micro-ring waveguide, it realizes high-speed electro-optic modulation of the optical carrier, completes the loading and coupling of high-speed data, and outputs multi-wavelength random polarization state modulation signals.

7. The optoelectronic fusion transmitter based on all-silicon technology as described in claim 6, characterized in that, The automatic polarization controller (13) is an on-chip automatic power control unit based on a Mach-Zehnder interferometer. It equalizes the optical power of each channel of the first and second filtered signals by adjusting the phase difference between the two arms of the interferometer, so that the first and second channel signals entering the micro-ring modulator (14) meet the same power conditions.

8. The optoelectronic fusion transmitter based on all-silicon technology as described in claim 7, characterized in that, The first port of the optical transmitter (1) is connected to the first port of the all-silicon photodetector (2), the second port of the optical transmitter (1) is connected to the first port of the control circuit (3), and the second port of the all-silicon photodetector (2) is connected to the second port of the control circuit (3).

9. A photoelectric fusion emission method based on all-silicon technology, implemented using a photoelectric fusion transmitter based on all-silicon technology as described in any one of claims 1-8, characterized in that, The method includes: Acquire multi-wavelength randomly polarized optical signals; The multi-wavelength random polarization state optical signal is input into the optical transmitter (1) for polarization unification, wavelength channel allocation, power correction and high-speed electro-optic modulation, and outputs a multi-wavelength random polarization state modulated signal; The multi-wavelength random polarization state modulation signal and the optical signal of the internal node of the optical transmitter (1) are sent to the all-silicon photodetector (2) to convert the optical signal into a monitoring electrical signal; The monitoring electrical signal is sent to the control circuit (3) for amplification, filtering and analog-to-digital conversion to generate a feedback signal. The feedback signal is sent to the optical transmitter (1) to drive the internal components of the optical transmitter (1) to form a closed-loop electrical control circuit, thereby realizing the real-time locking of the resonant wavelength of the internal channel of the optical transmitter (1) and the stable maintenance of its working state.

10. The optoelectronic fusion emission method based on all-silicon process as described in claim 9, characterized in that, The process of inputting the multi-wavelength random polarization state optical signal into an optical transmitter (1) for polarization unification, wavelength channel allocation, power correction, and high-speed electro-optic modulation, and outputting a multi-wavelength random polarization state modulated signal, includes: The multi-wavelength random polarization optical signal is input into the polarization beam splitting and rotation module (11) to perform polarization rotation and beam splitting, and a first orthogonal component and a second orthogonal component are obtained. The first orthogonal component and the second orthogonal component are unified into a single polarization mode suitable for silicon waveguide transmission through the polarization rotation mechanism, and a first optical signal and a second optical signal are obtained. The first optical signal and the second optical signal are input into the micro-ring filter (12) for filtering to obtain the first filtered signal and the second filtered signal; The first and second filtered signals are input into the automatic polarization controller (13) for polarization state correction and power balance to obtain the first channel signal and the second channel signal; The first channel signal and the second channel signal are input into the micro-ring modulator (14) to apply a high-speed electrical signal, complete the data loading, and output a multi-wavelength random polarization state modulated signal.

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