High-speed electro-optical modulator in visible band and preparation method thereof, photonic integrated chip
By introducing a sawtooth structure and a high dielectric constant dielectric layer into the thin-film lithium niobate modulator, the problems of microwave and optical wave velocity mismatch and process incompatibility are solved, realizing an ultra-wide bandwidth and low cost high-speed electro-optic modulator suitable for quantum information processing, cold atom traps, bio-imaging and high-speed optical interconnects.
Patent Information
- Application Number
- CN202610666411.7
- Authority / Receiving Office
- CN · China
- Patent Type
- Applications(China)
- Current Assignee / Owner
- Filing Date
- 2026-05-14
- Publication Date
- 2026-07-17
AI Technical Summary
Existing thin-film lithium niobate modulators suffer from severe speed mismatch between microwaves and light waves in the visible light band, incompatibility between speed matching structures and end-face coupling structures, and high manufacturing costs, making it difficult to achieve efficient speed matching and simple process solutions.
By employing a synergistic design of a sawtooth structure and a dielectric layer, and introducing an equivalent inductance and a high dielectric constant dielectric layer into the traveling wave electrode structure, perfect speed matching between microwaves and optical waves is achieved. Furthermore, the dielectric layer is used in the integrated design of the modulation region and end-face coupling, avoiding additional process complexity.
It achieves ultra-wide electro-optic bandwidth, low driving voltage, and high process compatibility in the visible light band, reducing manufacturing costs and making it suitable for large-scale integration.
Smart Images
Figure CN122410833A_ABST