On-chip electron source, on-chip electron gun and vacuum electronic device

Abstract

The utility model provides an on-chip electron source, an on-chip electron gun and a vacuum electronic device, the on-chip electron source comprises a substrate, and one side of the substrate is provided with a concave part; the metal electron emission structure is formed on the side, provided with the concave part, of the substrate, the two ends of the metal electron emission structure are erected on the substrate, and the middle part of the metal electron emission structure is suspended between the concave part and the substrate; wherein one surface, which emits electrons outwards, of the metal electron emission structure is a curved surface, so that the emitted electrons are focused to form electron beams. The device provided by the utility model not only has strong heating power and electron beam convergence effect, but also can realize batch preparation.

Description

Technical Field

[0001] This utility model relates to the field of electron beam emission technology, and in particular to an on-chip electron source, an on-chip electron gun, and a vacuum electronic device. Background Technology

[0002] An electron gun is a device that generates, accelerates, and focuses a high-energy-density electron beam. It emits an electron beam or electron stream with specific energy, current, velocity, and angle, and is a core component of many vacuum electronic devices, finding applications in important fields such as aerospace, healthcare, and scientific research. Among the various electron gun configurations, the Pierce-type electron gun is widely used because it allows for the focusing of electrons emitted from the cathode into parallel or near-parallel electron beams through appropriate cathode and focusing electrode shapes. US Patent Application No. US3882339A, entitled "Gridded X-ray tubegun," discloses one implementation of a Pierce-type electron gun, which consists of a reservoir cathode with a concave emitting surface, a grid for controlling the electron beam's on / off state, a focusing electrode for focusing and shaping the electron beam, and an anode for accelerating electrons. Specifically, the reservoir cathode in the electron gun primarily consists of a refractory metal block (such as tungsten) with a concave emitting surface and a heating filament; the metal block may be impregnated with barium carbonate to enhance its thermionic emission capability.

[0003] However, to expand the application scenarios of vacuum technology, current electron emission devices such as electron sources and electron guns are developing towards miniaturization, on-chip integration, and integration. Therefore, existing Pierce-type electron guns are not suitable for on-chip vacuum electronic devices due to the following drawbacks: Existing Pierce-type electron guns are made of bulk materials and have many complex three-dimensional structures. For example, in the storage cathode, a heating wire needs to be inserted into a metal block. These structures dictate that the device manufacturing process must involve machining the bulk material and then assembling the various components. However, the machining accuracy of this approach is limited, only supporting the miniaturization of the electron gun to the centimeter level, making it difficult to achieve on-chip electron guns. Furthermore, to support the miniaturization of the electron gun, extremely high-precision machining and assembly processes must be used, which will significantly reduce product consistency and yield. At the same time, existing solutions cannot fabricate multiple electron guns in parallel, facing problems such as low production efficiency and significant material waste.

[0004] Considering that current miniaturized electron guns on chips mostly use metal wires as electron emission sources, which have problems such as lack of self-focusing structure and inability to fully utilize heating power, there is an urgent need for an electron source and electron gun that can achieve on-chip and miniaturization, enabling it to have the function of cathode focusing and reduce heating power consumption during electron emission. Utility Model Content

[0005] In view of this, the present invention provides an on-chip electron source, an on-chip electron gun, and a vacuum electronic device, which have the advantages of strong heating power and electron beam focusing effect, and can be mass-produced to improve production efficiency and uniformity.

[0006] One aspect of this utility model provides an on-chip electronic source, the on-chip electronic source comprising:

[0007] A substrate, one side of which has a recess; and

[0008] A metallic electron emission structure is formed on one side of a substrate with a recess. The two ends of the metallic electron emission structure are placed on the substrate, and the middle part is suspended between the recess and the substrate.

[0009] In this structure, the outward-emitting electron side of the metal electron emission structure is curved, which focuses the emitted electrons to form an electron beam.

[0010] In some embodiments of this invention, the metal electron emission structure is a metal thin film or a metal sheet.

[0011] In some embodiments of this invention, the on-chip electron source further includes: an oxide film coated on the surface of the metal electron emission structure that emits electrons; wherein the oxide film includes yttrium oxide film, gadolinium oxide film, lanthanum oxide film, barium oxide film, zirconium oxide film, or scandium oxide film.

[0012] In some embodiments of this utility model, the curved surface of the metal electron emission structure is a part of a sphere, a part of a cylinder, a part of a parabola, or a part of a hyperboloid.

[0013] In some embodiments of this invention, the substrate is a planar substrate, and the curved surface of the metal electron emission structure is designed such that the central axis of the electron beam emission direction is perpendicular or parallel to the plane of the substrate with the recess.

[0014] Another aspect of this utility model provides an on-chip electron gun, which includes: an on-chip electron source as described in any of the above embodiments, and an anode disposed opposite to the curved surface of the metal electron emission structure.

[0015] In some embodiments of this invention, the anode includes a first electrode and a second electrode disposed opposite to each other, and the plane formed by the first electrode and the second electrode is perpendicular to the emission direction of the electron beam; wherein the first electrode and the second electrode are used to be subjected to a voltage higher than that of the on-chip electron source, so that electrons move from the on-chip electron source to the anode.

[0016] In some embodiments of this invention, the on-chip electron gun further includes a focusing electrode located between the on-chip electron source and the anode for further focusing the electron beam.

[0017] In some embodiments of this invention, the focusing electrode includes a third electrode and a fourth electrode disposed opposite to each other, and the plane formed by the third electrode and the fourth electrode is perpendicular to the emission direction of the electron beam; wherein, the surface of the third electrode and the fourth electrode on the side closer to the electron beam is a curved surface that bends toward the direction away from the electron beam.

[0018] In some embodiments of this invention, when the central axis of the electron beam emission direction is perpendicular to the plane of the substrate with the recess, the on-chip electron gun also includes an insulating connector for supporting the focusing electrode and the anode.

[0019] When the central axis of the electron beam emission direction is parallel to the plane of the substrate with a recess, both the focusing electrode and the anode are formed on the substrate.

[0020] In some embodiments of this invention, the focusing electrode and the anode are conductive thin film layers with a thickness of less than 5 mm, and the vertical distance between the on-chip electron source, the focusing electrode and the anode is less than 10 mm.

[0021] Another aspect of this utility model provides a vacuum electronic device, which utilizes an on-chip electron source as described in any of the above embodiments or an on-chip electron gun as described in any of the above embodiments to form an electron beam.

[0022] The on-chip electron source, on-chip electron gun, and vacuum electronic device proposed in this invention, by setting a suspended metal electron emission structure with a curved surface on the substrate material, not only have the characteristics of small size, low cost and wafer-level mass production, but also reduce heating power consumption and improve electron beam focusing effect during device use.

[0023] Additional advantages, objects, and features of this invention will be set forth in part in the description which follows, and will in part become apparent to those skilled in the art upon review of the description, or may be learned by practice of the invention. The objects and other advantages of this invention can be realized and obtained by means of the structures specifically pointed out in the description and drawings.

[0024] Those skilled in the art will understand that the objectives and advantages achievable with this invention are not limited to those specifically described above, and that the above and other objectives achievable with this invention will become clearer from the following detailed description. Attached Figure Description

[0025] The accompanying drawings, which are included to provide a further understanding of the present invention and form part of this application, do not constitute a limitation thereof. The components in the drawings are not drawn to scale but are merely for illustrating the principles of the present invention. For ease of illustration and description of certain parts of the present invention, corresponding portions in the drawings may be enlarged, i.e., may appear larger relative to other components in an exemplary device actually manufactured according to the present invention. In the drawings:

[0026] Figure 1 This is a three-dimensional schematic diagram of an on-chip electronic source in one embodiment of the present invention.

[0027] Figure 2 This is a three-dimensional schematic diagram of an on-chip electronic source in another embodiment of the present invention.

[0028] Figure 3 This is a three-dimensional schematic diagram of an on-chip electronic source in another embodiment of the present invention.

[0029] Figure 4 This is a schematic diagram of an on-chip electron gun in one embodiment of the present invention.

[0030] Figure 5 This is a schematic diagram of an on-chip electron gun in another embodiment of the present invention.

[0031] Figure 6 This is a schematic diagram of an on-chip electron gun in another embodiment of the present invention.

[0032] Figure label:

[0033] On-chip electron source 100; substrate 110; metallic electron emission structure 120; fixture 130; on-chip electron gun 200; anode 210; first electrode 211; second electrode 213; focusing electrode 220; third electrode 221; fourth electrode 223; insulating connector 230 Detailed Implementation

[0034] To make the objectives, technical solutions, and advantages of this utility model clearer, the present utility model will be further described in detail below with reference to the embodiments and accompanying drawings. Here, the illustrative embodiments and descriptions of this utility model are used to explain the present utility model, but are not intended to limit the present utility model.

[0035] It should also be noted that, in order to avoid obscuring the present invention with unnecessary details, only the structures and / or processing steps closely related to the solution according to the present invention are shown in the accompanying drawings, while other details that are not closely related to the present invention are omitted.

[0036] It should be emphasized that the term "including / comprises" as used herein refers to the presence of a feature, element, step, or component, but does not exclude the presence or addition of one or more other features, elements, steps, or components.

[0037] It should also be noted that, unless otherwise specified, the term "connection" in this article can refer not only to a direct connection, but also to an indirect connection involving an intermediary.

[0038] In the following description, embodiments of the present invention will be illustrated with reference to the accompanying drawings. In the drawings, the same reference numerals represent the same or similar parts, or the same or similar steps.

[0039] While existing Pierce-type electron guns can achieve cathode self-focusing, they are not suitable for the requirements of current on-chip and miniaturized vacuum electronic devices. Furthermore, current on-chip miniaturized electron guns mostly use metal wires as the electron emission source, which suffers from the lack of a self-focusing structure and inefficient utilization of heating power. For example, two Chinese patents with application numbers 2008200482930 and 2004200456374 disclose a typical structure of a directly heated electron gun, where the cathode body is a completely suspended metal filament, electrically and mechanically connected to the electron gun only at both ends. Although theoretically, when a voltage is applied to both ends of the metal filament and it is heated to a certain temperature, almost the entire filament will emit electrons. However, in practical applications, the electron gun can only utilize the electron emission surface near the center, resulting in wasted heating power. Simultaneously, the metal filaments disclosed in these two patents are planar straight wires, and their emission angles are divergent, requiring subsequent focusing structures for focusing.

[0040] Based on this, this application proposes an on-chip electron source, an on-chip electron gun, and a vacuum electronic device by using micro-nano fabrication technology and advanced packaging technology. By setting a suspended metal thin film with a concave curved surface structure on a planar substrate material as a thermionic electron source, the fabricated on-chip electron source, electron gun, and vacuum electronic device not only have the characteristics of small size, low cost, and wafer-level mass production, but also reduce heating power consumption and improve electron beam focusing effect during device use.

[0041] like Figure 1 and Figure 2 As shown, this application proposes an on-chip electronic source 100, which includes:

[0042] Substrate 110, one side of substrate 110 has a recess; and

[0043] The metal electron emission structure 120 is formed on one side of the substrate 110 with a recess. The two ends of the metal electron emission structure 120 are placed on the substrate 110, and the middle part is suspended between the recess and the substrate 110 to form a heat insulation gap. The side of the metal electron emission structure 120 that emits electrons outward is curved to focus the emitted electrons to form an electron beam.

[0044] More specifically, the recess on the substrate 110 in this application can be a groove or a hollow portion, etc., for suspending the metal electron emission structure 120. Furthermore, in this application, both ends of the metal electron emission structure 120 can be placed on the substrate 110, or the metal electron emission structure 120 can be supported on the substrate 110 by a fixing member 130. That is, the on-chip electron source also includes a fixing member 130 for fixing the metal electron emission structure 120 to the substrate 110. Additionally, in this application, the surface of the side of the metal electron emission structure 120 that emits electrons must be curved and suspended above the substrate 110. However, curved structures are not necessarily all metal electron emission structures 120; they may also be structures made of other materials used to connect the substrate 110 and the metal electron emission structure 120.

[0045] Furthermore, the surface of the side of the metal electron emission structure 120 that emits electrons (is...) Figure 1 and Figure 2 The surface filled with horizontal lines (in the diagram) is a curved surface bent towards a predetermined direction to focus emitted electrons and form an electron beam; wherein, the direction in which the metal electron emission structure 120 emits the electron beam outward is opposite to or parallel to the substrate 110, and the emission direction of the electron beam is opposite to the predetermined direction. That is, the predetermined direction is perpendicular to or parallel to the substrate 110. Figure 1 As shown, the electron beam emitted by the metal electron emission structure 120 is directed away from the substrate 110. Therefore, the bending direction of the metal electron emission structure 120 is set to be opposite to the emission direction of the electron beam and towards the substrate 110; as Figure 2 As shown, the emission direction of the electron beam formed by the metal electron emission structure 120 is parallel to the substrate 110. Therefore, the bending direction of the metal electron emission structure 120 is opposite to the emission direction of the electron beam and is parallel to the substrate 110.

[0046] As an example, this application can process the surface emitting electrons in the on-chip electron source into a curved surface, so that the emitted electrons achieve a self-focusing effect immediately after being emitted into the vacuum, thereby converging into a parallel or near-parallel electron beam in space, thus giving the electrons better trajectory controllability. The shape of the surface on one side of the metal electron emission structure 120 that emits electrons can be part of a sphere (e.g., Figure 3 (as shown), or a portion of the cylindrical surface (such as...) Figure 1(as shown), or a portion of a parabola, or a portion of a hyperboloid, or other unconventional surface that facilitates electron focusing, but this application is not limited thereto.

[0047] In some embodiments of this invention, the metal electron emission structure 120 may be a metal thin film or a metal sheet, and the thickness of the metal electron emission structure 120 is 0.5–300 μm. Figure 1 In this context, the thickness of the metallic electron-emitting structure can be the height of the curved metallic thin film; Figure 2 In this application, the thickness of the metal electron emission structure is equal to the height of the horizontally filled pattern. Furthermore, the substrate 110 can be made of insulating materials such as silicon or silicon dioxide, and the metal electron emission structure 120 can be made of metallic materials such as gold, nickel, or copper that emit electrons when a voltage is applied. This application does not specifically limit the materials used for the substrate 110 and the metal electron emission structure 120.

[0048] As an example, when the metal electron emission structure 120 in this application is a metal thin film, it can be obtained by thin film deposition methods such as magnetron sputtering; when the metal electron emission structure 120 is a metal sheet, it can be an existing metal sheet structure that can be used to emit electrons.

[0049] In some embodiments of this invention, the on-chip electron source proposed in this application further includes: an oxide film coated on the surface of the metal electron emission structure 120 on the side that emits electrons outward; wherein the oxide film includes yttrium oxide film, gadolinium oxide film, lanthanum oxide film, barium oxide film, zirconium oxide film, or scandium oxide film. The aforementioned types of oxide films are merely examples, and this invention is not limited thereto; other materials used to increase electron emission efficiency may also be selected.

[0050] As an example, the substrate in this application may be a planar substrate, or the side surface of the substrate with the recess is planar, so that the curved surface of the metal electron emission structure is designed such that the central axis of the electron beam emission direction is perpendicular or parallel to the plane of the substrate with the recess.

[0051] As an example, current on-chip thermionic emission electron sources primarily utilize metal or carbon nanotube films fabricated using semiconductor processes, with the sacrificial layer released to achieve a suspended structure. However, conventional metal film growth often involves significant internal stress, causing the film to bend upwards after release, resulting in a convex electron emission surface that leads to divergent electron emission, which is detrimental to device applications. Considering the difficulty of fabricating curved thin film layers, this application proposes a method for fabricating on-chip electron sources based on micro / nano fabrication processes, which can be used to fabricate... Figure 1 and Figure 2 The on-chip electronic source in the chip overcomes the above-mentioned defects.

[0052] against Figure 1 The structure of the on-chip electron source 100 shown is specifically fabricated as follows:

[0053] Step S01: A planar photoresist is coated on the substrate 110. The curved surface required for fabricating the metal electron emission structure 120 is formed on the coated photoresist using patterning methods such as nanoimprinting or two-photon lithography. The curved surface is then formed on the substrate 110 using techniques such as dry etching.

[0054] Step S02: Using photolithography, define the area for fabricating the metal emission structure 120 on the substrate 110 prepared in step S01, and fabricate a metal thin film layer of predetermined thickness using thin film deposition methods such as thermal evaporation or magnetron sputtering.

[0055] Step S03: Using photolithography, define the area on the substrate 110 where the recess needs to be formed, and use an isotropic etching method to remove part of the substrate below it without damaging the metal electron emission structure 120, thereby achieving the suspended setting of the metal electron emission structure 120.

[0056] against Figure 2 The structure of the on-chip electron source 100 shown can be fabricated in the same way as the one shown, except that step S01 can be omitted. Figure 1 The preparation methods for the structures shown are the same.

[0057] Another aspect of this utility model proposes an on-chip electron gun 200, such as... Figure 4 As shown, the on-chip electron gun includes: an on-chip electron source 100 (as a cathode) as described in any of the above embodiments, and an anode 210 located on the side of the metal electron emission structure 120 that emits electrons (i.e., the anode 210 is disposed opposite to the curved surface of the metal electron emission structure that emits electrons). The anode 210 is used to be subjected to a voltage higher than that of the on-chip electron source 100, so that electrons move from the on-chip electron source to the anode. For example, a 0V voltage can be applied to the anode, and a negative voltage can be applied to the on-chip electron source 100, so that electrons move from the on-chip electron source 100 to the anode 210 and are accelerated.

[0058] In some embodiments of this invention, the structure of the on-chip electron gun is as follows: Figure 4 In the case shown in (b), the anode 210 includes a first electrode 211 and a second electrode 213 disposed opposite to each other, and the plane formed by the first electrode 211 and the second electrode 213 is perpendicular to the emission direction of the electron beam.

[0059] Although the on-chip electron source 100 in this application enables electrons to self-focus, strong mutual repulsion still exists between electrons due to their shared negative charge. Therefore, a focusing electrode 220 can be provided in the on-chip electron gun 200 to further confine the electrons. That is, the on-chip electron gun 200 also includes a focusing electrode 220 located between the on-chip electron source 100 and the anode 210 for further focusing the electron beam. This application does not specifically limit the thickness of the focusing electrode 220 and the anode 210; for example, the thickness of the focusing electrode 220 and the anode 210 can be less than 5 mm. Furthermore, this application does not specifically limit the materials used to fabricate the focusing electrode 220 and the anode 210; they can be conductive thin film layers. In addition, this application does not specifically limit the distances between the on-chip electron source 100, the focusing electrode 220, and the anode 210; for example, the vertical distance between the on-chip electron source 100 and the focusing electrode 220, and between the focusing electrode 220 and the anode 210, can be less than 10 mm.

[0060] In some embodiments of this invention, the structure of the on-chip electron gun is as follows: Figure 5 In the case shown in (b), the focusing electrode 220 includes a third electrode 221 and a fourth electrode 223 disposed opposite to each other, and the plane formed by the third electrode 221 and the fourth electrode 223 is perpendicular to the emission direction of the electron beam.

[0061] As an example, such as Figure 6 As shown, the surfaces of the third electrode 221 and the fourth electrode 223 near the electron beam are curved surfaces that curve away from the electron beam. For example, the curved surface shape in the focusing electrode 220 can be a part of a conical surface, or a part of a spherical surface, or a part of a cylindrical surface, or a part of a parabolic surface, or a part of a hyperboloid, or other unconventional curved surfaces that help focus electrons; this invention is not limited to these.

[0062] In some embodiments of this utility model, such as Figure 5 and Figure 6As shown, the on-chip electron source 100, focusing electrode 220, and anode 210 in the on-chip electron gun 200 can be arranged in a stacked manner or arranged sequentially on a planar substrate. When the electron beam emission direction is away from the substrate (i.e., the parts of the on-chip electron gun 200 are stacked, or the central axis of the electron beam emission direction is perpendicular to the plane of the substrate with the recess), the on-chip electron gun 200 also includes an insulating connector 230 for supporting the focusing electrode 220 and the anode 210. The insulating connector includes a first connector and a second connector, wherein the first connector is used to connect the focusing electrode 220 and the on-chip electron source 100 (or the substrate 110) to support the focusing electrode 220, and the second connector is used to connect the focusing electrode 220 and the anode 210 to support the anode 210. That is, the first connector is located between the focusing electrode 220 and the on-chip electron source 100, and the second connector is located between the focusing electrode 220 and the anode 210. When the electron beam emission direction is parallel to the substrate (i.e., the parts of the on-chip electron gun 200 are arranged sequentially on a planar substrate, or the central axis of the electron beam emission direction is parallel to the plane of the substrate with the recess), the focusing electrode 220 and the anode 210 are both formed on the substrate 110.

[0063] As an example, this application can utilize micro-nano fabrication and packaging technologies to fabricate an on-chip electron gun 200. The fabrication method for the vertically stacked on-chip electron gun 200 structure includes:

[0064] Step S11: Prepare using the above preparation method Figure 1 The on-chip electron source shown uses laser drilling, nanoimprinting and dry etching, or a combination of two-photon lithography and dry etching to process connectors, focusing electrodes and anodes.

[0065] Step S12: Using processes such as anodic bonding or laser welding, the on-chip electron source, insulating connector, focusing electrode, and anode are sequentially bonded to obtain the following: Figure 5 The on-chip electron gun is shown in (a) above.

[0066] The fabrication method for the planar arrangement of on-chip electron gun 200 includes:

[0067] Step S13: Prepare the following using the above preparation method: Figure 2 The on-chip electronic source shown.

[0068] Step S14: Using photolithography and coating techniques, the focusing electrode and anode are fabricated in parallel or in series on the substrate fabricated by the on-chip electron source.

[0069] It should be noted that steps S13 and S14 can be partially or completely combined depending on the structure and material of the on-chip electronic source, focusing electrode and anode, so that the processing steps of the on-chip electronic source, focusing electrode and anode can be performed simultaneously.

[0070] This application enables the mass production of multiple on-chip electron guns 200. The fabrication method for a vertically stacked on-chip electron gun 200 structure includes:

[0071] Step S21: Obtain the first parent layer, the second parent layer, and the third parent layer; wherein, the first parent layer has N on-chip electron sources arranged in a periodic manner, the second parent layer has N focusing electrodes arranged in a periodic manner, and the third parent layer has N anodes arranged in a periodic manner.

[0072] Step S22: Bond the first master layer, the second master layer, and the third master layer sequentially using anodic bonding or laser welding processes;

[0073] Step S23: Cutting the bonded structure yields multiple on-chip electron guns.

[0074] For the parallel-arranged on-chip electron gun 200 structure, multiple on-chip electron guns can be obtained by simultaneously fabricating multiple on-chip electron guns on the same substrate and finally cutting them.

[0075] The processing sequence of the fabrication method of the on-chip electron source 100 and on-chip electron gun 200 mentioned above is only an example. Some steps can also be performed simultaneously according to the needs of saving time, etc. This utility model is not limited thereto.

[0076] Another aspect of this application provides a vacuum electronic device that utilizes an on-chip electron source as described in any of the above embodiments or an on-chip electron gun as described in any of the above embodiments to form an electron beam. For example, the type of vacuum electronic device may be an X-ray source, a traveling wave tube, a klystron, a magnetron, a backward wave tube, a gyrotron, or an ion source, and this invention is not limited thereto.

[0077] The on-chip electron source, on-chip electron gun, and vacuum electronic device proposed in this invention have the following advantages:

[0078] (1) The direct-heated metal electron emission structure has the advantages of low heating power and short start-up time, making it more suitable for low power consumption scenarios.

[0079] (2) The suspended metal electron emission structure is based on the heat insulation effect, so that the heating power is concentrated only on the area where electrons are emitted, reducing the waste of heating power. Moreover, the concave curved surface structure can converge the electrons emitted from various places at a certain point, thereby enabling the on-chip electron source to have a self-focusing function and improving the electron beam focusing effect.

[0080] (3) The on-chip electron source and on-chip electron gun proposed in this application can utilize sheet-like substrates and thin film materials, and can be manufactured using micro-nano fabrication technology and advanced packaging technology to achieve wafer-level mass production. The fabricated devices not only meet the needs of miniaturization and on-chip fabrication of vacuum electronic devices, but also have the advantages of small size and low cost.

[0081] It should be clarified that this utility model is not limited to the specific configurations and processes described above and shown in the figures. For the sake of brevity, detailed descriptions of known methods are omitted here. In the above embodiments, several specific steps are described and shown as examples. However, the method process of this utility model is not limited to the specific steps described and shown. Those skilled in the art can make various changes, modifications, and additions, or change the order of steps, after understanding the spirit of this utility model.

[0082] In this invention, features described and / or illustrated for one embodiment may be used in the same or similar manner in one or more other embodiments, and / or combined with or in place of features of other embodiments.

[0083] The above description is merely a preferred embodiment of this utility model and is not intended to limit the utility model. For those skilled in the art, various modifications and variations can be made to the embodiments of this utility model. Any modifications, equivalent substitutions, improvements, etc., made within the spirit and principles of this utility model should be included within the protection scope of this utility model.

Claims

1. An on-chip electronic source, characterized in that, The electronic sources on this chip include: A substrate, wherein one side of the substrate has a recess; and A metallic electron emission structure is formed on one side of the substrate with a recess, the two ends of the metallic electron emission structure are attached to the substrate, and the middle part is suspended between the recess and the substrate; In this structure, the outward-emitting electron side of the metal electron emission structure is curved to focus the emitted electrons and form an electron beam.

2. The on-chip electronic source according to claim 1, characterized in that, The metal electron emission structure is a metal thin film or a metal sheet.

3. The on-chip electronic source according to claim 1, characterized in that, The on-chip electron source further includes: an oxide film coated on the surface of the metal electron emission structure that emits electrons; wherein the oxide film includes yttrium oxide film, gadolinium oxide film, lanthanum oxide film, barium oxide film, zirconium oxide film or scandium oxide film.

4. The on-chip electronic source according to claim 1, characterized in that, The curved surface of the metallic electron emission structure is a part of a sphere, a part of a cylinder, a part of a parabola, or a part of a hyperboloid.

5. The on-chip electronic source according to claim 1, characterized in that, The substrate is a planar substrate, and the curved surface of the metal electron emission structure is designed such that the central axis of the electron beam emission direction is perpendicular or parallel to the plane of the substrate where the recess is formed.

6. An on-chip electron gun, characterized in that, The on-chip electron gun includes: an on-chip electron source as described in any one of claims 1 to 5, and an anode disposed opposite to the curved surface of the metallic electron emission structure.

7. The on-chip electron gun according to claim 6, characterized in that, The anode includes a first electrode and a second electrode, and the plane formed by the first electrode and the second electrode is perpendicular to the emission direction of the electron beam; wherein the first electrode and the second electrode are used to be subjected to a voltage higher than that of the on-chip electron source, so that electrons move from the on-chip electron source to the anode.

8. The on-chip electron gun according to claim 6, characterized in that, The on-chip electron gun also includes a focusing electrode located between the on-chip electron source and the anode for further focusing the electron beam.

9. The on-chip electron gun according to claim 8, characterized in that, The focusing electrode includes a third electrode and a fourth electrode arranged opposite to each other, and the plane formed by the third electrode and the fourth electrode is perpendicular to the emission direction of the electron beam; wherein, the surface of the third electrode and the fourth electrode on the side closer to the electron beam is a curved surface that bends toward the direction away from the electron beam.

10. The on-chip electron gun according to claim 8, characterized in that, When the central axis of the electron beam emission direction is perpendicular to the plane of the substrate where the recess is formed, the on-chip electron gun also includes an insulating connector for supporting the focusing electrode and the anode. When the central axis of the electron beam emission direction is parallel to the plane of the substrate in which the recess is formed, both the focusing electrode and the anode are formed on the substrate.

11. The on-chip electron gun according to claim 8, characterized in that, The focusing electrode and anode are conductive thin film layers with a thickness of less than 5 mm, and the vertical distance between the on-chip electron source, focusing electrode and anode is less than 10 mm.

12. A vacuum electronic device, characterized in that, The vacuum electronic device uses an on-chip electron source as described in any one of claims 1 to 5 or an on-chip electron gun as described in any one of claims 6 to 11 to form an electron beam.

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