Anti-crosstalk structure of silicon-based OLED (Organic Light Emitting Diode) display device and silicon-based OLED display device

Abstract

The utility model discloses an anti-crosstalk structure of a silicon-based OLED display device, which comprises an isolation column used for isolating a first organic layer, the isolation column comprises an inorganic layer and a metal layer arranged on the inorganic layer, and the metal layer is made of ferrous metal. According to the anti-crosstalk structure of the silicon-based OLED display device provided by the utility model, the inorganic layer and the black metal layer jointly form the isolation column structure, so that the isolation of the organic layer (an electric crosstalk layer) can be realized; meanwhile, black metal can serve as a light blocking layer, optical crosstalk between adjacent pixels is prevented, ambient light reflection is reduced, and the display contrast ratio is improved. The utility model also discloses a silicon-based OLED display device.

Description

TECHNICAL FIELD

[0001] The utility model belongs to the technical field of semiconductor, concretely speaking, the utility model relates to a kind of silicon-based OLED display device anti-crosstalk structure and silicon-based OLED display device. BACKGROUND

[0002] Silicon-based OLED near-eye display product needs higher pixel density (>3000ppi), and traditional FMM (precision mask) evaporation method is difficult to meet the pixel density, so the mainstream silicon-based OLED structure is WOLED+CF (color film) mode, OLED film layer is common layer, and the thickness of RGB different anode ITO is adjusted to realize monochromatic light emission by adjusting device microcavity, However, the common layer will have a horizontal crosstalk problem at low voltage, which reduces the color purity of OLED device, and the electrical crosstalk phenomenon is more significant in high-brightness stacked devices (charge generation layer metal doping).

[0003] A full-color micro display device and its manufacturing method are disclosed in Chinese patent application No. 202410601627.6, which relates to the technical field of semiconductors. The full-color micro display device includes a driving wafer, a display module integrated with the driving wafer through a bonding metal layer, and at least one display device layer and a color conversion layer stacked vertically. The display device layer includes a pixel unit and a metal fence surrounding the pixel unit, which is generated during the process of ion beam etching the bonding metal layer. An upper optical cavity is prepared on the surface of the display device layer away from the driving wafer, and the projection of the pixel unit on the driving wafer is located within the projection of the upper optical cavity on the driving wafer. The upper optical cavity is filled with the color conversion layer. The metal fence and the upper optical cavity are used to constrain the light-emitting angle of the pixel unit.

[0004] It is desirable to provide an improved silicon-based OLED display device anti-crosstalk structure, particularly regarding how to isolate the organic layer. UTILITY MODEL CONTENT

[0005] The utility model aims to solve at least one of the technical problems existing in the prior art. To this end, the utility model provides a silicon-based OLED display device anti-crosstalk structure, which aims to isolate the organic layer in OLED.

[0006] To achieve the above purpose, the utility model adopts the technical scheme of: a silicon-based OLED display device anti-crosstalk structure, including an isolation column for isolating a first organic layer, the isolation column includes an inorganic layer and a metal layer disposed on the inorganic layer, and the metal layer is made of black metal.

[0007] The inorganic layer is inserted into the first organic layer, the metal layer comprises a first part and a second part, the first part is inserted into the inorganic layer, and the second part is located above the first part and the inorganic layer.

[0008] The second part has a projection area on the substrate which is larger than that of the inorganic layer, and the projection of the inorganic layer on the substrate is located within the projection of the second part on the substrate.

[0009] The second part is in contact with the cathode layer.

[0010] The metal layer further comprises a third part located above the second part, and the third part is in contact with the cathode layer.

[0011] The second part has a contact surface in contact with the cathode layer, and the contact surface is an obliquely arranged plane.

[0012] A second organic layer is arranged above the third part, and the cathode layer covers the second organic layer.

[0013] The metal layer is made of chromium.

[0014] The inorganic layer is composed of SiO / SiN / SiO and SiN.

[0015] The utility model also provides a kind of silicon-based OLED display device, including the silicon-based OLED display device anti-crosstalk structure of the described.

[0016] The silicon-based OLED display device anti-crosstalk structure of the utility model, by inorganic layer and black metal layer jointly constitute isolation column structure, the organic layer (electric crosstalk layer) can be realized to be cut off;Meanwhile, black metal can be used as light blocking layer, prevent optical crosstalk between adjacent pixels, reduce ambient light reflection, improve display contrast. BRIEF DESCRIPTION OF DRAWINGS

[0017] The present specification includes the following drawings, and the shown contents are respectively:

[0018] Figure 1 It is the structure schematic diagram of the utility model silicon-based OLED display device anti-crosstalk structure;

[0019] Figure 2 It is the structure schematic diagram of the utility model silicon-based OLED display device;

[0020] Figures 3-5 It is the preparation process schematic diagram of the utility model silicon-based OLED display device anti-crosstalk structure;

[0021] Marked in the figure: 1, inorganic layer; 2, metal layer; 3, first organic layer; 4, first part; 5, second part; 6, third part; 7, contact surface; 8, second organic layer; 9, B-anode; 10, G-anode; 11, cathode layer; 12, first inorganic encapsulation layer; 13, organic encapsulation layer; 14, second inorganic encapsulation layer; 15, CF-B; 16, CF-G; 17, R-anode. DETAILED DESCRIPTION

[0022] The specific embodiments of the present application will be further described in detail below with reference to the drawings, and the purpose is to help the skilled in the art to have a more complete, accurate and in-depth understanding of the concept and technical scheme of the present application, and to help its implementation.

[0023] It should be noted that in the following embodiments, the "first", "second" and "third" do not represent the absolute division relationship of structure and / or function, nor represent the execution order, but only for the convenience of description.

[0024] As Figures 1 to 5 shown, the utility model provides a kind of silicon-based OLED display device anti-crosstalk structure, including the isolation column for cutting off first organic layer 3, isolation column includes inorganic layer 1 and the metal layer 2 being set on inorganic layer 1, the material of metal layer 2 is black metal.

[0025] Specifically, as Figures 1 to 5 shown, inorganic layer 1 is SiO / SiN / SiO and SiN combination, the material of metal layer 2 is chromium, and the upper inorganic layer 1 is black light-absorbing metal layer 2.Inorganic layer 1 is inserted into the first organic layer 3, and the metal layer 2 includes a first part 4 and a second part 5.The first part 4 is inserted into the inorganic layer 1, and the second part 5 is located above the first part 4 and the inorganic layer 1.The projection area of the second part 5 on the substrate is greater than the projection area of the inorganic layer 1 on the substrate, and the projection of the inorganic layer 1 on the substrate is within the projection range of the second part 5 on the substrate.The inorganic layer 1 and the second black metal layer 2 jointly form an isolation column structure, which can be designed as an inorganic-wrapped metal structure for longitudinal conduction design.The projection area of the upper metal layer is greater than that of the inorganic layer 1, which can achieve the purpose of cutting off the evaporation organic layer (electrical crosstalk layer).At the same time, the black metal can act as a light barrier to prevent optical crosstalk between adjacent pixels, reduce environmental light reflection, and improve display contrast.

[0026] As Figures 1 to 5As shown, an isolation column is provided between the B-anode and the G-anode, with its inorganic layer 1 inserted between them, and simultaneously inserted into the first organic layer 3. Similarly, an isolation column is provided between the R-anode and the G-anode, with its inorganic layer 1 inserted between them, and simultaneously inserted into the first organic layer 3. The first organic layer 3 covers the B-anode, G-anode, and R-anode.

[0027] like Figures 1 to 5 As shown, the metal layer 2 also includes a third portion 6 located above the second portion 5. The second portion 5 and the third portion 6 are in contact with the cathode layer 11. The first portion 4 is inserted into the inorganic layer 1, and the top surface of the first portion 4 is connected to the bottom surface of the second portion 5, and the top surface of the second portion 5 is connected to the bottom surface of the third portion 6. The second portion 5 has a contact surface 7 that contacts the cathode layer 11. The contact surface 7 is an inclined plane that extends downwards. The upper end of the contact surface 7 is connected to the bottom of the third portion 6, and the lower end of the contact surface 7 is located outside the inorganic layer 1.

[0028] like Figures 1 to 5 As shown, a second organic layer 8 is disposed above the third part 6, and a cathode layer 11 covers the second organic layer 8. The second organic layer 8 is located between the third part 6 and the cathode layer 11, and a groove is formed in the cathode layer 11 to accommodate the third part 6 and the second organic layer 8.

[0029] like Figure 1 As shown, in this embodiment, after the OLED anode film layer is prepared, an inorganic layer 1 (SiO / SiN / multilayer combination) is prepared. This inorganic layer 1 can cover the edge of the anode or be laterally disconnected from the anode. After the inorganic layer 1 is prepared, a conductive metal layer 2 is deposited on top. This metal layer 2 and the inorganic layer 1 below form an isolation pillar structure. It should be noted that the projected area of ​​the metal layer 2 on the substrate needs to be larger than that of the inorganic layer 1 to form an eaves structure, so as to create a step difference to achieve the isolation effect of the organic film layer. Moreover, the total thickness of the inorganic layer 1 needs to be greater than the thickness of the OLED common layer to achieve height difference step isolation.

[0030] The upper black metal layer 2 can be made of two materials: the first part 4 is made of a highly conductive metal material, and the second part 5 and the third part 6 are made of a black light-absorbing metal or a black light-absorbing organic material. The two materials are used to create a gentle slope morphology on the side to provide a larger contact area with the cathode 7. The metal layer 2 needs to both isolate the organic common layer and better conduct the cathode laterally. After all the common layers of the OLED are deposited (including the cathode Mg:Ag), a thick transparent conductive electrode (IZO, etc.) is prepared on top of the common layers. The metal layer 2 above the isolation pillars needs to ensure the lateral conductivity of IZO. Therefore, two isolation pillar metal layers 2 can be prepared and etched with a gentle slope structure to ensure better contact between the transparent conductive electrode and the metal layer 2 and reduce the contact resistance.

[0031] The isolation column can be designed as an inorganic wrapped metal structure, and the upper metal layer 2 can be connected to the lower conductive anode layer through the isolation column, so that the OLED cathode can be powered through the array electrode, and each pixel isolation column can be powered, thereby reducing the resistance influence of the whole surface cathode powered by the edge (edge to center zone IR drop).

[0032] As shown in the figure, the black metal layer 2 of the isolation column can prevent optical crosstalk between adjacent pixels, effectively avoiding the irradiation of B-anode light to the G pixel (G-CF) in the adjacent CF color group layer, and due to the diffuse reflection and light absorption characteristics of the black metal, the reflection of the screen body can be reduced, and the display contrast can be improved. Figure 2

[0033] The organic material is evaporated and disconnected at the edge of the isolation column, the cathode layer 11 can be overlapped through the contact surface 7 of the isolation column, and the organic material above the isolation column does not affect the side conductivity.

[0034] After the first inorganic packaging layer 12 is completed, a concave-convex structure is formed on the surface, and an organic packaging layer 13 can be selected to fill and form a flat surface. Since the black metal of the isolation column can prevent light crosstalk, the thickness of the organic packaging layer 13 does not affect its optical crosstalk characteristics, and the selection of the organic packaging layer 13 can improve the peeling problem caused by excessive stress of pure inorganic packaging, provide a flat surface for the second inorganic packaging layer, and be beneficial to improve the packaging reliability.

[0035] As shown in the figure, the first inorganic packaging layer 12 is formed on the side away from the first organic layer 3 of the cathode layer 11, the organic packaging layer 13 is formed on the side away from the first organic layer 3 of the first inorganic packaging layer 12, the second inorganic packaging layer is formed on the side away from the first organic layer 3 of the organic packaging layer 13, and the G pixel, B pixel and R pixel in the CF color group layer are formed on the side away from the first organic layer 3 of the second inorganic packaging layer. Figure 2 The above-mentioned anti-crosstalk structure of the silicon-based OLED display device has the following advantages:

[0036] 1. The isolation column structure combined with inorganic and metal can cut off the evaporated organic layer and prevent horizontal electrical crosstalk of the OLED common layer;

[0037] 2. The isolation column structure is powered by the array wire for the OLED cathode, and the upper metal layer 2 of the isolation column can be used as an auxiliary cathode, so that the upper cathode of the OLED can be transversely conducted (thick IZO, etc.);

[0038] 3. The black metal can be used as a light blocking layer, which can reduce the reflection of ambient light and improve the display contrast, and can block the light crosstalk between adjacent light-emitting pixels;

[0039]

[0040] ​​4. Organic & inorganic package structure reduces peeling risk and improves package reliability.

[0041] The utility model also provides a silicon based OLED display device, including above structure's silicon based OLED display device anti crosstalk structure.

[0042] The utility model has been described exemplarily above in combination with the drawings. Apparently, the specific implementation of the utility model is not limited by the above-mentioned mode. As long as various non-essential improvements are made by adopting the method concept and technical scheme of the utility model; or without improvement, the above-mentioned concept and technical scheme of the utility model are directly applied to other occasions, which are all within the protection scope of the utility model.

Claims

1. A crosstalk prevention structure for silicon-based OLED display devices, characterized in that: It includes an isolation column for separating the first organic layer. The isolation column includes an inorganic layer and a metal layer disposed on the inorganic layer. The metal layer is made of ferrous metal.

2. The anti-crosstalk structure for silicon-based OLED display devices according to claim 1, characterized in that: The inorganic layer is inserted into the first organic layer, and the metal layer includes a first part and a second part, wherein the first part is inserted into the inorganic layer, and the second part is located above the first part and the inorganic layer.

3. The anti-crosstalk structure for silicon-based OLED display devices according to claim 2, characterized in that: The projected area of ​​the second part on the substrate is greater than the projected area of ​​the inorganic layer on the substrate, and the projection of the inorganic layer on the substrate is located within the projection range of the second part on the substrate.

4. The anti-crosstalk structure for silicon-based OLED display devices according to claim 2, characterized in that: The second part is in contact with the cathode layer.

5. The anti-crosstalk structure for silicon-based OLED display devices according to claim 4, characterized in that: The metal layer also includes a third portion located above the second portion, the third portion being in contact with the cathode layer.

6. The anti-crosstalk structure for silicon-based OLED display devices according to claim 5, characterized in that: The second part has a contact surface that contacts the cathode layer, and the contact surface is an inclined plane.

7. The anti-crosstalk structure for silicon-based OLED display devices according to claim 5, characterized in that: A second organic layer is disposed above the third part, and the cathode layer covers the second organic layer.

8. The anti-crosstalk structure for silicon-based OLED display devices according to any one of claims 1 to 7, characterized in that: The metal layer is made of chromium.

9. The anti-crosstalk structure for silicon-based OLED display devices according to any one of claims 1 to 7, characterized in that: The inorganic layer is composed of a combination of SiO / SiN / SiO and SiN.

10. A silicon-based OLED display device, characterized in that: The crosstalk prevention structure for silicon-based OLED display devices as described in any one of claims 1 to 9 is included.

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